Exhaust ring and substrate processing device

Abstract

Provided is an exhaust ring which is disposed around a substrate support part of a substrate processing device, said exhaust ring comprising a first surface and a second surface on the opposite side from the first surface, wherein: a plurality of slits that pass through from the first surface to the second surface are formed; and the plurality of slits are each formed inclined from the first surface to the second surface such that, in plan view, at least part of an opening on the second surface side is not visible from an opening on the first surface side.

Description

Exhaust ring and substrate processing apparatus

[0001] The present disclosure relates to an exhaust ring and a substrate processing apparatus.

[0002] Patent Document 1 discloses a ring-shaped baffle plate having inner and outer edges that is arranged around a substrate holder, and has passages between its upper and lower surfaces that are configured to allow gas to flow through the passages.

[0003] Japan Special Table No. 2007-525825

[0004] The technology according to the present disclosure appropriately exhausts gas from a plasma processing space in a substrate processing apparatus.

[0005] One aspect of the present disclosure is an exhaust ring that is arranged around a substrate support portion of a substrate processing apparatus, and includes a first surface and a second surface opposite the first surface, and a plurality of slits are formed that penetrate from the first surface to the second surface, and the plurality of slits are formed at an angle from the first surface to the second surface so that at least a portion of the opening on the second surface is not visible from the opening on the first surface in a planar view.

[0006] According to the present disclosure, gas can be appropriately exhausted from a plasma processing space in a substrate processing apparatus.

[0007] 1 is an explanatory diagram showing an example of the configuration of a plasma processing system; FIG. 1 is a cross-sectional view showing an example of the configuration of a plasma processing apparatus; FIG. 2 is a partial cross-sectional view showing a schematic overview of the configuration of a partition; FIG. 3 is a plan view showing a schematic overview of the configuration of a baffle plate according to the first embodiment, as viewed from above; FIG. 4 is a partially enlarged plan view of a baffle plate according to the first embodiment; FIG. 5 is a partially enlarged plan view of a baffle plate according to the first embodiment; FIG. 6 is a partially enlarged cross-sectional view of a baffle plate according to the first embodiment; FIG. 7 is a partial perspective view showing a schematic overview of the configuration of a slit according to the first embodiment; FIG. 8 is a partially enlarged plan view of a baffle plate according to the first embodiment; FIG. 9 is an explanatory diagram showing an example of the inclination direction of the slit according to the first embodiment; FIG. 10 is a plan view showing an example of the arrangement of a baffle plate according to the first embodiment; FIG. 11 is an explanatory diagram showing a schematic example of the main effects of the baffle plate; FIG. 12 is a partially enlarged cross-sectional view showing a schematic overview of the configuration of a slit according to a modified example of the first embodiment; FIG. 13 is a partially enlarged plan view of a slit according to a modified example of the first embodiment; FIG. 14 is a plan view showing a schematic overview of a modified baffle plate arrangement, as viewed from above; FIG. 1 is a partially enlarged plan view of a baffle plate according to a second embodiment. FIG. 2 is a partially enlarged plan view of a baffle plate according to the second embodiment. FIG. 3 is a plan view, viewed from above, schematically illustrating the outline of the configuration of a baffle plate according to a third embodiment. FIG. 4 is a partially enlarged plan view of a baffle plate according to the third embodiment. FIG. 5 is a partially enlarged plan view of a baffle plate according to the third embodiment. FIG. 6 is a partially enlarged sectional view of a baffle plate according to the third embodiment. FIG. 7 is a plan view, viewed from above, schematically illustrating the outline of the configuration of a baffle plate according to a fourth embodiment. FIG. 8 is a partially enlarged sectional view of a baffle plate according to the fourth embodiment. FIG. 9 is a partially enlarged sectional view of a baffle plate according to a reference example. FIG. 10 is a partially enlarged plan view of a baffle plate according to a fifth embodiment. FIG. 11 is a partially enlarged plan view of a baffle plate according to the fifth embodiment. FIG. 12 is a partially enlarged plan view of a baffle plate according to the fifth embodiment. FIG. 13 is a partially enlarged plan view showing the configuration of divided portions of a slit according to a modified example. FIG. 14 is a plan view, viewed from above, schematically illustrating the outline of the configuration of a baffle plate according to a sixth embodiment. FIG. 15 is a partially enlarged plan view of a baffle plate according to the sixth embodiment.FIG. 10 is a plan view seen from above schematically illustrating the outline of the configuration of a baffle plate according to a seventh embodiment. FIG. 11 is a partially enlarged plan view of a baffle plate according to the seventh embodiment. FIG. 12 is a cross-sectional view schematically illustrating the outline of the configuration of a baffle plate according to an eighth embodiment. FIG. 13 is a cross-sectional view schematically illustrating the outline of parameters of slits according to various embodiments. FIG. 14 is a cross-sectional view schematically illustrating the outline of the configuration of a baffle plate and branch through holes according to a ninth embodiment. FIG. 15 is a cross-sectional view schematically illustrating the outline of another example of the configuration of a branch through hole. FIG. 16 is a cross-sectional view schematically illustrating the outline of another example of the configuration of a branch through hole. FIG. 17 is a cross-sectional view schematically illustrating the outline of another example of the configuration of a branch through hole. FIG. 18 is a cross-sectional view schematically illustrating the outline of another example of the configuration of a baffle plate and offset through holes according to a tenth embodiment. FIG. 19 is a cross-sectional view schematically illustrating the outline of another example of the configuration of an offset through hole. FIG. 19 is a cross-sectional view schematically illustrating the outline of another example of the configuration of an offset through hole.

[0008] In the manufacturing process of semiconductor devices, a processing module containing semiconductor wafers (hereinafter referred to as "substrates") is decompressed and various processing steps, including plasma processing, are performed on the substrates. The plasma processing is performed using, for example, a plasma processing apparatus in which multiple processing modules are arranged around a common transfer module.

[0009] The plasma processing chamber included in the processing module includes a substrate support and a plasma processing space where plasma processing of the substrate is performed. An exhaust unit is connected to the plasma processing space, and gas filling the plasma processing space is exhausted by the exhaust unit. In this case, in order to maintain uniformity of gas distribution in the plasma processing space, it has been proposed to install a baffle plate between the plasma processing space and the exhaust unit to adjust the gas flow rate.

[0010] Patent Document 1 discloses a ring-shaped baffle plate having inner and outer edges that is arranged around a substrate holder, and has passages between its upper and lower surfaces that are configured to allow gas to flow through the passages.

[0011] Such baffle plates are provided with multiple holes to enable gas exhaust from the plasma processing space. Slit-shaped (long-hole) passages have been proposed as holes to increase the cross-sectional area of ​​the passage to ensure gas conductance, as described in Patent Document 1. However, baffle plates with such slit-shaped holes have a problem with plasma leakage, in which plasma enters the exhaust section from the plasma processing space through the holes and damages components of the exhaust section that are not protected against plasma. On the other hand, reducing the cross-sectional area of ​​the passage to suppress plasma leakage reduces gas conductance and the exhaust speed. Therefore, there is room for improvement in achieving both the trade-off between suppressing plasma leakage and improving conductance.

[0012] Therefore, the technology disclosed herein appropriately exhausts gas from a plasma processing space in a substrate processing apparatus. The configuration of a substrate processing apparatus according to this embodiment will be described below with reference to the drawings. Note that, in this specification, elements having substantially the same functional configuration are designated by the same reference numerals, and redundant description will be omitted.

[0013] <Plasma Processing System> FIG. 1 is a diagram illustrating an example of the configuration of a plasma processing system. In one embodiment, the plasma processing system includes a plasma processing apparatus 1 and a control unit 2. The plasma processing system is an example of a substrate processing system, and the plasma processing apparatus 1 is an example of a substrate processing apparatus. The plasma processing apparatus 1 includes a plasma processing chamber 10, a substrate support unit 11, and a plasma generation unit 12. The plasma processing chamber 10 has a plasma processing space Sp and an exhaust space Se. The plasma processing chamber 10 has at least one gas supply port for supplying at least one processing gas to the plasma processing space Sp and at least one gas exhaust path 10e for exhausting gas from the plasma processing space Sp via the exhaust space Se. The gas supply port is connected to a gas supply unit 20 (described later), and the gas exhaust path 10e is connected to an exhaust system 40 (described later). The substrate support unit 11 is disposed in the plasma processing space Sp and has a substrate support surface for supporting a substrate.

[0014] The plasma generating unit 12 is configured to generate plasma from at least one processing gas supplied into the plasma processing space Sp. The plasma formed in the plasma processing space Sp may be capacitively coupled plasma (CCP), inductively coupled plasma (ICP), electron-cyclotron-resonance plasma (ECR plasma), helicon wave plasma (HWP), surface wave plasma (SWP), or the like. Various types of plasma generators may be used, including alternating current (AC) plasma generators and direct current (DC) plasma generators. In one embodiment, the AC signal (AC power) used in the AC plasma generator has a frequency in the range of 100 kHz to 10 GHz. Thus, AC signals include radio frequency (RF) signals and microwave signals. In one embodiment, the RF signal has a frequency in the range of 100 kHz to 150 MHz.

[0015] The control unit 2 processes computer-executable instructions that cause the plasma processing apparatus 1 to perform the various processes described in this disclosure. The control unit 2 may be configured to control each element of the plasma processing apparatus 1 to perform the various processes described herein. In one embodiment, part or all of the control unit 2 may be included in the plasma processing apparatus 1. The control unit 2 may include a processing unit 2a1, a storage unit 2a2, and a communication interface 2a3. The control unit 2 may be implemented, for example, by a computer 2a. The processing unit 2a1 may be configured to read from the storage unit 2a2 a program that provides logic or routines that enable the various control operations and execute the read program to perform the various control operations. This program may be stored in the storage unit 2a2 in advance or may be acquired via a medium when needed. The acquired program is stored in the storage unit 2a2 and is read from the storage unit 2a2 by the processing unit 2a1 for execution. The medium may be various storage media readable by the computer 2a or a communication line connected to the communication interface 2a3. The storage medium may be temporary or non-temporary. The processing unit 2a1 may be a central processing unit (CPU) or one or more circuits. The storage unit 2a2 may include a random access memory (RAM), a read-only memory (ROM), a hard disk drive (HDD), a solid state drive (SSD), or a combination thereof. The communication interface 2a3 may communicate with the plasma processing apparatus 1 via a communication line such as a local area network (LAN).

[0016] <Plasma Processing Apparatus> A configuration example of a capacitively coupled plasma processing apparatus will be described below as an example of the plasma processing apparatus 1. Fig. 2 is a diagram for explaining a configuration example of a capacitively coupled plasma processing apparatus.

[0017] The capacitively coupled plasma processing apparatus 1 includes a plasma processing chamber 10, a gas supply unit 20, a power supply 30, and an exhaust system 40. The plasma processing apparatus 1 also includes a substrate support 11 and a gas inlet. The gas inlet is configured to introduce at least one process gas into the plasma processing chamber 10. The gas inlet includes a showerhead 13. The substrate support 11 is disposed within the plasma processing chamber 10. The showerhead 13 is disposed above the substrate support 11. In one embodiment, the showerhead 13 forms at least a portion of the ceiling of the plasma processing chamber 10. The plasma processing chamber 10 has a plasma processing space Sp defined by the showerhead 13, a sidewall 10a of the plasma processing chamber 10, the substrate support 11, and a partition 200 (described below). The plasma processing chamber 10 is grounded. The showerhead 13 and the substrate support 11 are electrically insulated from the housing of the plasma processing chamber 10.

[0018] The substrate support 11 includes a main body 111 and a ring assembly 112. The main body 111 has a central region 111a for supporting a substrate W and an annular region 111b for supporting the ring assembly 112. A wafer is an example of a substrate W. The annular region 111b of the main body 111 surrounds the central region 111a of the main body 111 in a plan view. The substrate W is disposed on the central region 111a of the main body 111, and the ring assembly 112 is disposed on the annular region 111b of the main body 111 so as to surround the substrate W on the central region 111a of the main body 111. Therefore, the central region 111a is also called a substrate support surface for supporting the substrate W, and the annular region 111b is also called a ring support surface for supporting the ring assembly 112.

[0019] In one embodiment, the main body 111 includes a base 1110 and an electrostatic chuck 1111. The base 1110 includes a conductive member. The conductive member of the base 1110 can function as a lower electrode. The electrostatic chuck 1111 is disposed on the base 1110. The electrostatic chuck 1111 includes a ceramic member 1111a and an electrostatic electrode 1111b disposed within the ceramic member 1111a. The ceramic member 1111a has a central region 111a. In one embodiment, the ceramic member 1111a also has an annular region 111b. Note that the annular region 111b may also be provided by another member surrounding the electrostatic chuck 1111, such as an annular electrostatic chuck or an annular insulating member. In this case, the ring assembly 112 may be disposed on the annular electrostatic chuck or the annular insulating member, or may be disposed on both the electrostatic chuck 1111 and the annular insulating member. Furthermore, at least one RF / DC electrode coupled to an RF power supply 31 and / or a DC power supply 32, which will be described later, may be disposed within the ceramic member 1111a. In this case, the at least one RF / DC electrode functions as a lower electrode. When a bias RF signal and / or a DC signal, which will be described later, is supplied to the at least one RF / DC electrode, the RF / DC electrode is also called a bias electrode. Note that the conductive member of the base 1110 and the at least one RF / DC electrode may function as multiple lower electrodes. Furthermore, the electrostatic electrode 1111b may function as a lower electrode. Therefore, the substrate support 11 includes at least one lower electrode.

[0020] The ring assembly 112 includes one or more annular members. In one embodiment, the one or more annular members include one or more edge rings and at least one cover ring. The edge rings are formed of a conductive or insulating material, and the cover rings are formed of an insulating material.

[0021] The substrate support 11 may also include a temperature adjustment module configured to adjust at least one of the electrostatic chuck 1111, the ring assembly 112, and the substrate W to a target temperature. The temperature adjustment module may include a heater, a heat transfer medium, a flow passage 1110a, or a combination thereof. A heat transfer fluid such as brine or a gas flows through the flow passage 1110a. In one embodiment, the flow passage 1110a is formed in the base 1110, and one or more heaters are disposed in the ceramic member 1111a of the electrostatic chuck 1111. The substrate support 11 may also include a heat transfer gas supply configured to supply a heat transfer gas to a gap between the back surface of the substrate W and the central region 111a.

[0022] A partition 200 is disposed around the substrate support 11. The partition 200 is provided between the plasma processing space Sp and the exhaust space Se. In this embodiment, the plasma processing space Sp and the exhaust space Se are separated by the partition 200, with the upper part of the partition 200 constituting the plasma processing space Sp and the lower part constituting the exhaust space Se. The configuration of the partition 200 will be described in detail later.

[0023] The showerhead 13 is configured to introduce at least one processing gas from the gas supply unit 20 into the plasma processing space Sp. The showerhead 13 has at least one gas supply port 13a, at least one gas diffusion chamber 13b, and multiple gas inlets 13c. The processing gas supplied to the gas supply port 13a passes through the gas diffusion chamber 13b and is introduced into the plasma processing space Sp from the multiple gas inlets 13c. The showerhead 13 also includes at least one upper electrode. In addition to the showerhead 13, the gas inlet may also include one or more side gas injectors (SGIs) attached to one or more openings formed in the sidewall 10a.

[0024] The gas supply unit 20 may include at least one gas source 21 and at least one flow controller 22. In one embodiment, the gas supply unit 20 is configured to supply at least one process gas from a corresponding gas source 21 to the showerhead 13 via a corresponding flow controller 22. Each flow controller 22 may include, for example, a mass flow controller or a pressure-controlled flow controller. Additionally, the gas supply unit 20 may include at least one flow modulation device that modulates or pulses the flow rate of the at least one process gas.

[0025] The power supply 30 includes an RF power supply 31 coupled to the plasma processing chamber 10 via at least one impedance matching circuit. The RF power supply 31 is configured to supply at least one RF signal (RF power) to at least one lower electrode and / or at least one upper electrode. This causes plasma to be formed from at least one processing gas supplied to the plasma processing space Sp. Therefore, the RF power supply 31 can function as at least a part of the plasma generating unit 12. Furthermore, by supplying a bias RF signal to the at least one lower electrode, a bias potential is generated on the substrate W, thereby attracting ion components in the formed plasma to the substrate W.

[0026] In one embodiment, the RF power supply 31 includes a first RF generating unit 31a and a second RF generating unit 31b. The first RF generating unit 31a is coupled to at least one lower electrode and / or at least one upper electrode via at least one impedance matching circuit and is configured to generate a source RF signal (source RF power) for plasma generation. In one embodiment, the source RF signal has a frequency in the range of 10 MHz to 150 MHz. In one embodiment, the first RF generating unit 31a may be configured to generate multiple source RF signals having different frequencies. The generated one or more source RF signals are supplied to at least one lower electrode and / or at least one upper electrode.

[0027] The second RF generator 31b is coupled to at least one lower electrode via at least one impedance matching circuit and is configured to generate a bias RF signal (bias RF power). The frequency of the bias RF signal may be the same as or different from the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency lower than the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency in the range of 100 kHz to 60 MHz. In one embodiment, the second RF generator 31b may be configured to generate multiple bias RF signals having different frequencies. The generated one or more bias RF signals are supplied to at least one lower electrode. In various embodiments, at least one of the source RF signal and the bias RF signal may be pulsed.

[0028] The power supply 30 may also include a DC power supply 32 coupled to the plasma processing chamber 10. The DC power supply 32 includes a first DC generator 32a and a second DC generator 32b. In one embodiment, the first DC generator 32a is connected to the at least one lower electrode and configured to generate a first DC signal. The generated first DC signal is applied to the at least one lower electrode. In one embodiment, the second DC generator 32b is connected to the at least one upper electrode and configured to generate a second DC signal. The generated second DC signal is applied to the at least one upper electrode.

[0029] In various embodiments, the first and second DC signals may be pulsed. In this case, a sequence of voltage pulses is applied to at least one lower electrode and / or at least one upper electrode. The voltage pulses may have a rectangular, trapezoidal, triangular, or combination thereof pulse waveform. In one embodiment, a waveform generator for generating the sequence of voltage pulses from the DC signal is connected between the first DC generator 32a and at least one lower electrode. Thus, the first DC generator 32a and the waveform generator constitute a voltage pulse generator. When the second DC generator 32b and the waveform generator constitute a voltage pulse generator, the voltage pulse generator is connected to at least one upper electrode. The voltage pulses may have either positive or negative polarity. Furthermore, the sequence of voltage pulses may include one or more positive voltage pulses and one or more negative voltage pulses within one period. The first and second DC generating units 32a and 32b may be provided in addition to the RF power supply 31, or the first DC generating unit 32a may be provided instead of the second RF generating unit 31b.

[0030] The exhaust system 40 may be connected to a gas exhaust line 10e provided in, for example, the bottom 10b of the plasma processing chamber 10. The exhaust system 40 may include a pressure regulating valve and a vacuum pump. The pressure in the plasma processing space Sp is regulated by the pressure regulating valve. The vacuum pump may include a turbomolecular pump, a dry pump, or a combination thereof.

[0031] <Partition section> The following describes the details of the configuration of the partition section 200. Fig. 3 is a partial cross-sectional view that schematically shows the outline of the configuration of the partition section 200 according to this embodiment. Fig. 3 is a partial cross-sectional view taken along the line D-D in Fig. 11, which shows an example of the arrangement of the partition section 200 according to this embodiment.

[0032] The partition section 200 includes a baffle plate 210 serving as an exhaust ring according to this embodiment, and a clamp ring 211 that supports the baffle plate 210 .

[0033] The baffle plate 210 is disposed around the substrate support 11 so as to surround the substrate support 11 in a plan view. The baffle plate 210 has a first surface 210p on the plasma processing space Sp side and a second surface 210e on the exhaust space Se side. The baffle plate 210 has a plurality of slits 213 formed therein, penetrating from the first surface 210p to the second surface 210e. The plurality of slits 213 have a first opening 213a on the first surface 210p side and a second opening 213b on the second surface 210e side. The plurality of slits 213 are formed at an angle so that the second openings 213b are not visible from the first openings 213a in a plan view of the baffle plate 210. In one embodiment, the baffle plate 210 is made of silicon. The configuration of the baffle plate 210 will be described in detail below.

[0034] As shown in the figure, the clamp ring 211 includes an upper member 211a and a lower member 211b. The upper member 211a and the lower member 211b sandwich the baffle plate 210 between the outer periphery of the substrate support 11 and the inner periphery of the chamber sidewall 10c. The upper member 211a and the lower member 211b may be fastened together by, for example, a fastening means (not shown). An O-ring (not shown) may be provided between the baffle plate 210 and the clamp ring 211 to form an airtight seal therebetween. In one embodiment, the baffle plate 210 may be held between the outer periphery of the substrate support 11 and the inner periphery of the chamber sidewall 10c by a desired holding means other than the clamp ring 211.

[0035] In this embodiment, the exhaust space Se is a space defined by the sidewall 10a, bottom 10b, substrate support 11, and partition 200 of the plasma processing chamber 10, and extends in an annular shape around the substrate support 11. As will be described later, first to third exhaust holes 231 to 233 are formed in the bottom 10b defining the exhaust space Se, and the first to third exhaust holes 231 to 233 are connected to the gas exhaust path 10e.

[0036] <Baffle Plate> (First Embodiment) Hereinafter, details of the baffle plate 210 according to the first embodiment will be described with reference to FIGS. 4 to 10. FIG. 4 is a plan view seen from above that schematically illustrates the overall configuration of the baffle plate 210. FIGS. 5 and 6 are partially enlarged plan views of portions A and B shown in FIG. 4. FIG. 7 is a partially enlarged cross-sectional view taken along the line CC in FIG. 4. FIG. 8 is a partial perspective view illustrating the opening of the slit 213. FIG. 9 is a partially enlarged plan view seen from above that schematically illustrates the configuration of the slit 213. FIG. 10 is an explanatory diagram showing an example of the inclination direction of the slit 213.

[0037] As shown in FIG. 4 , the baffle plate 210 is an annular member in a plan view, having an inner circumferential portion 214 and an outer circumferential portion 215, which are concentric circles. In the following description, the centers of the inner circumferential portion 214 and the outer circumferential portion 215 are referred to as the center O of the baffle plate 210. The baffle plate 210 also has a plurality of regions in a plan view, namely, a first region 210a, a second region 210b, and a third region 210c. The first to third regions 210a to 210c are strip-shaped regions extending in the circumferential direction of the baffle plate 210, and are regions that are 120 degrees symmetrical with respect to the center O of the baffle plate 210 as the origin. The plurality of slits 213 described above are formed in each of the regions 210a to 210c.

[0038] 5, the slits 213 in the first region 210a are formed to extend linearly in a plan view, and the longitudinal directions L1 of the slits 213 in the first region 210a are formed to be substantially parallel to each other.

[0039] As shown in FIG. 6 , similar to the first region 210a, the slits 213 in the second region 210b also extend linearly in a plan view, and the longitudinal directions L2 of the slits 213 are formed so that they are substantially parallel to one another. The longitudinal direction L1 of the slits 213 formed in the first region 210a is different from the longitudinal direction L2 of the slits 213 formed in the second region 210b. Similarly, the longitudinal directions of the slits 213 in the first region 210a and the third region 210c, and the second region 210b and the third region 210c, are also different from one another. In this embodiment, the slits 213 formed in each of the regions 210a to 210c are formed 120 degrees symmetrically with respect to the center O of the baffle plate 210 as the origin. In this case, the angle formed by the longitudinal directions of the slits 213 formed in each of the regions 210a to 210c is 60 degrees.

[0040] As shown in FIGS. 7 to 9 , the first opening 213a is the opening end of the slit 213 on the first surface 210p of the baffle plate 210, and is a region extending along the longitudinal direction L1 of the slit 213. From another perspective, the first surface 210p of the baffle plate 210 is provided with a first peripheral edge 213d, which is a ridge portion constituting the periphery of the slit 213. The region surrounded by the first peripheral edge 213d is the first opening 213a. Similarly, the second opening 213b is the opening end of the slit 213 on the second surface 210e of the baffle plate 210, and is a region extending along the longitudinal direction L1 of the slit 213. From another perspective, the second surface 210e of the baffle plate 210 is provided with a second peripheral edge 213e, which is a ridge portion constituting the periphery of the slit 213. The region surrounded by the second peripheral edge 213e is the second opening 213b.

[0041] As shown in FIGS. 7 to 9 , the slits 213 in the first region 210a are formed in a direction perpendicular to the longitudinal direction L1, inclined in a direction from the inner peripheral portion 214 toward the outer peripheral portion 215 of the baffle plate 210. The inclined direction of the slits 213 in the first region 210a is referred to as the "inclined direction T1." In this embodiment, because the slits 213 are formed inclined in the inclined direction T1, the second openings 213b are not visible from the first openings 213a in a plan view of the baffle plate 210. The line of sight in a plan view of the baffle plate 210 is indicated by the dashed-dotted arrow in FIG. 7 . As shown in FIGS. 7 and 9 , in the line of sight in a plan view of the baffle plate 210, the wall surface 213c of the slit 213 is visible, but the second openings 213b on the second surface 210e side are not visible. In this specification, the inclination direction of the slits 213 is described based on the direction from the first opening 213a toward the second opening 213b when viewed from the first surface 210p side of the baffle plate 210.

[0042] 10 , like the first region 210a, the slits 213 are also formed at an incline in the second region 210b and the third region 210c. In the second region 210b, the slits 213 are formed at an incline in a direction perpendicular to the longitudinal direction L2, from the inner periphery 214 toward the outer periphery 215 of the baffle plate 210, i.e., in a direction T2. ​​In the third region 210c, the slits 213 are formed at an incline in a direction perpendicular to the longitudinal direction L3, from the inner periphery 214 toward the outer periphery 215 of the baffle plate 210, i.e., in a direction T3.

[0043] 11 is a plan view showing an example of the arrangement of the baffle plate 210 according to this embodiment. In this embodiment, a plurality of exhaust holes, namely, first exhaust hole 231, second exhaust hole 232, and third exhaust hole 233, are provided at three locations on the bottom 10b of the plasma processing chamber 10. A gas exhaust path 10e is connected to each of the first to third exhaust holes 231 to 233. The first to third exhaust holes 231 to 233 have a slit shape extending along the sidewall 10a. The gas exhaust paths 10e connected to the first to third exhaust holes 231 to 233 may merge downstream and be connected to a single exhaust system 40.

[0044] 11 , the baffle plate 210 according to this embodiment is disposed such that the inclination direction T1 of the slits 213 formed in the first region 210a is directed toward the first exhaust hole 231. Similarly, the inclination direction T2 of the slits 213 formed in the second region 210b is directed toward the second exhaust hole 232, and the inclination direction T3 of the slits 213 formed in the third region 210c is directed toward the third exhaust hole 233. In other words, when the baffle plate 210 is disposed around the substrate support member 11, the slits 213 formed in the first to third regions 210a to 210c are inclined toward the first to third exhaust holes 231 to 233, respectively.

[0045] Fig. 12 is an explanatory diagram that schematically illustrates an example of the main effects of the baffle plate 210 according to this embodiment. Note that Fig. 12 is a simplified cross-sectional view taken along the line D-D in Fig. 11, and only the components necessary for the following description are shown, with the rest omitted.

[0046] As shown in FIG. 12 , gas G in the plasma processing space Sp flows into the exhaust space Se through the slits 213 in the baffle plate 210 and is exhausted through the first to third exhaust holes 231 to 233 into the gas exhaust path 10e. The slits 213 in the baffle plate 210 ensure a higher conductance for the gas G than, for example, when multiple circular through-holes with a diameter substantially equal to the width of the slits 213 are formed in the region where the slits 213 are formed. Furthermore, the longitudinal directions L1 to L3 of the slits 213 in the first to third regions 210a to 210c are arranged substantially parallel to the first to third exhaust holes 231 to 233, respectively. This prevents portions where the slits 213 are not formed from interfering with the flow of gas G, ensuring a higher conductance for the gas G. Furthermore, the slits 213 in the first region 210a are formed at an angle toward the first exhaust hole 231. Therefore, as shown by the dashed arrow in FIG. 12, the gas G above the substrate W easily flows toward the first exhaust holes 231, and the exhaust efficiency of the gas G above the substrate W can be improved.

[0047] Furthermore, in the past, there was a problem of plasma leakage, in which plasma PL generated in the plasma processing space Sp enters the exhaust space Se through the slits 213 in the baffle plate 210 and damages components in the exhaust space Se that are not protected against plasma PL. To address this plasma leakage, the baffle plate 210 of this embodiment has slits 213 formed at an angle so that the second openings 213b are not visible from the first openings 213a. Therefore, as shown by the solid arrows in Figure 12, even if plasma PL, which often moves perpendicular to the baffle plate 210, enters the first openings 213a of the slits 213, it comes into contact with the wall surface 213c of the slit 213 and is therefore unlikely to enter the exhaust space Se through the second openings 213b. This reduces plasma leakage.

[0048] Furthermore, since the slit 213 is formed at an angle so that the second opening 213b is not visible from the first opening 213a, as shown by the dotted arrow in Fig. 12, even if recoil particles BP that may be generated in the exhaust space Se enter the second opening 213b of the slit 213, they come into contact with the inner wall of the slit 213 and are unlikely to enter the plasma processing space Sp from the first opening 213a. This makes it possible to reduce contamination of the plasma processing space Sp by the recoil particles BP.

[0049] <Modification of Slit> Fig. 13 is a partially enlarged cross-sectional view showing an outline of a slit 213 according to a modification of this embodiment. Fig. 14 is a partially enlarged plan view showing an outline of the slit 213 according to the modification shown in Fig. 13.

[0050] As shown in the dashed-dotted arrows in Figure 13 and Figure 14, the slits 213 according to this modification are formed at an angle such that, in a plan view of the baffle plate 210, a portion of the second opening 213b is visible through the first opening 213a, but the other portion is not. From another perspective, in a plan view of the slits 213 according to this modification, a portion of the second peripheral edge 213e on the opposite side from the inclination direction T1 is visible. The slits 213 according to this modification can also reduce the amount of plasma PL entering the exhaust space Se via the slits 213. Furthermore, a higher conductance can be ensured for the gas G.

[0051] <Modification of Baffle Plate Arrangement> FIG. 15 is a plan view showing an outline of a modification of the arrangement of the baffle plate 210 according to the present embodiment. In this modification, the inclination direction T1 of the slits 213 formed in the first region 210a is arranged so as to be offset by a desired angle from the direction toward the first exhaust holes 231. Similarly, the inclination direction T2 of the slits 213 formed in the second region 210b is arranged so as to be offset by a desired angle from the direction toward the second exhaust holes 232, and the inclination direction T3 of the slits 213 formed in the third region 210c is arranged so as to be offset by a desired angle from the direction toward the third exhaust holes 233. In other words, as in this modification, the baffle plate 210 is rotated by a desired angle around the center O from the arrangement example described with reference to FIG. 11 . This makes it possible to change the conductance of the gas G from the arrangement example described with reference to FIG. 11 and adjust the exhaust uniformity. In one embodiment, a drive mechanism (not shown) is provided that rotates the baffle plate 210 about the center O, and the drive mechanism changes the position of the baffle plate 210 so as to achieve a desired exhaust uniformity. In another embodiment, the position of the baffle plate 210 is changed during maintenance of the plasma processing chamber 10 so as to achieve a desired exhaust uniformity.

[0052] Second Embodiment A baffle plate 240 according to a second embodiment will be described below with reference to Figures 16 to 18. Figure 16 is a plan view seen from above that schematically illustrates the overall configuration of the baffle plate 240. Figures 17 and 18 are partially enlarged plan views of portions E and F shown in Figure 16.

[0053] As shown in FIG. 16 , the baffle plate 240 according to the second embodiment is an annular member in plan view, similar to the baffle plate 210 according to the first embodiment, having an inner peripheral portion 241 and an outer peripheral portion 242, which are concentric circles. The baffle plate 240 also includes a plurality of regions in plan view, namely, a first region 240a, a second region 240b, and a third region 240c. The first to third regions 240a to 240c are strip-shaped regions extending in the circumferential direction of the baffle plate 240 and are 120-degree point-symmetrical with respect to the center O of the baffle plate 240 as the origin. A plurality of slits 243 are formed in each of the regions 240a to 240c. The baffle plate 240 can be clamped by a clamp ring 211 and attached to the periphery of the substrate support 11, similar to the baffle plate 210 according to the first embodiment described with reference to FIG. 3 .

[0054] 17 and 18, the slits 243 according to the second embodiment are formed in the shape of an arc concentric with the inner circumferential portion 241 and the outer circumferential portion 242. That is, the slits 243 are formed to extend from one end to the other end in the circumferential direction of each of the first to third regions 240a to 240c along the arc of a circle centered at the center O of the baffle plate 240.

[0055] 16 , the slits 243 are formed in a direction perpendicular to a tangent to a circle centered at the center O of the baffle plate 240, and are inclined in a direction from the inner periphery 241 to the outer periphery 242 of the baffle plate 240. In other words, the slits 243 are formed in a radial direction of a circle centered at the center O of the baffle plate 240, and are inclined in a direction from the inner periphery 241 to the outer periphery 242. In addition, the cross-sectional configuration and the effects of the slits 243 according to the second embodiment are similar to those of the slits 213 according to the first embodiment or its modified example.

[0056] According to the baffle plate 240 of the second embodiment, the conductance of the gas G is uniform in the circumferential direction of the baffle plate 240, so that when the exhaust holes provided in the bottom 10b of the plasma processing chamber 10 are provided symmetrically in the circumferential direction, it is possible to further improve the uniformity of the exhaust.

[0057] Third Embodiment A baffle plate 250 according to a third embodiment will be described below with reference to Figures 19 to 22. Figure 19 is a plan view seen from above that schematically illustrates the overall configuration of the baffle plate 250. Figures 20 and 21 are partially enlarged plan views of portions G and H shown in Figure 19. Figure 22 is a partially enlarged cross-sectional view taken along line II in Figure 19.

[0058] 19 , the baffle plate 250 includes a single region 252 in plan view in which a plurality of slits 251 are formed. The region 252 is an annular region extending in the circumferential direction of the baffle plate 250. The baffle plate 250 can be attached to the periphery of the substrate support 11 by being clamped by a clamp ring 211, in the same manner as the baffle plate 210 according to the first embodiment described with reference to FIG.

[0059] 20 and 21 , the slits 251 according to the third embodiment are formed so as to extend linearly in a plan view. The slits 251 are also formed so that the longitudinal direction L4 is substantially parallel. As shown in FIG. 21 , a partition 253 where no slit 251 is formed may be provided at a desired position within the region 252. The partition 253 partitions the region 252 so that the length of the slits 251 in the longitudinal direction L4 is equal to or shorter than a desired length, thereby making it easier to form the slits 251 and ensuring the strength of the baffle plate 250.

[0060] 19 and 22, the slits 251 are formed to be inclined in a single direction (inclined direction T4) perpendicular to the longitudinal direction L4. In addition, the cross-sectional configuration and effects of the slits 251 according to the third embodiment are similar to those of the slits 213 according to the first embodiment or its modified examples.

[0061] In one embodiment, a single exhaust hole is provided at one location on the bottom 10b of the plasma processing chamber 10. A gas exhaust path 10e is connected to the exhaust hole and is then connected to the exhaust system 40. In this case, the baffle plate 250 is disposed around the substrate support 11 and is disposed such that the inclination direction T4 of the slits 251 is directed toward the exhaust hole on the bottom 10b of the plasma processing chamber 10.

[0062] The baffle plate 250 according to the third embodiment can also achieve the same effects as those described in the first embodiment with reference to FIG. 12. That is, since the slits 251 of the baffle plate 250 are formed at an angle toward the exhaust holes, it is possible to ensure high conductance for the gas G. In addition, it is possible to reduce plasma leakage. Furthermore, it is possible to reduce contamination of the plasma processing space Sp due to recoil particles BP.

[0063] Fourth Embodiment A baffle plate 260 according to a fourth embodiment will now be described with reference to Figures 23 and 24. Figure 23 is a plan view seen from above that schematically illustrates the configuration of the baffle plate 260. Figure 24 is a partially enlarged cross-sectional view taken along the line L-L in Figure 23.

[0064] 23 , the baffle plate 260 includes two regions, a first region 262 and a second region 263, in a plan view in which a plurality of slits 261 are formed. The first region 262 and the second region 263 are annular regions extending in the circumferential direction of the baffle plate 260 and are regions that are line-symmetrical with respect to a central axis K that passes through the center O of the baffle plate 260. The baffle plate 260 can be attached to the periphery of the substrate support 11 by being clamped by a clamp ring 211, in the same manner as the baffle plate 210 according to the first embodiment described with reference to FIG. 3 .

[0065] The slits 261 of the baffle plate 260 according to the fourth embodiment are formed to extend linearly in a plan view, similar to the slits 251 according to the third embodiment. The slits 261 are formed so that their longitudinal directions L5 are substantially parallel to each other. The longitudinal direction L5 is the same in the first region 262 and the second region 263.

[0066] 23 and 24 , the slits 261 formed in the first region 262 are formed in a direction perpendicular to the longitudinal direction L5 and inclined in a direction away from the central axis K (inclined direction T5). The slits 261 formed in the second region 263 are formed in a direction perpendicular to the longitudinal direction L5 and inclined in a direction away from the central axis K (inclined direction T6). In addition, the cross-sectional configuration and effects of the slits 261 according to the fourth embodiment are similar to those of the slits 213 according to the first embodiment or its modified example.

[0067] In one embodiment, two exhaust holes are provided at two locations on the bottom 10b of the plasma processing chamber 10. The two exhaust holes are arranged on opposite sides of the substrate support 11 in a plan view. A gas exhaust path 10e is connected to the exhaust holes and is then connected to the exhaust system 40. In this case, the baffle plate 260 is arranged around the substrate support 11 and is arranged such that the inclination direction T5 of the slits 261 in the first region 262 is directed toward one exhaust hole in the bottom 10b of the plasma processing chamber 10, and the inclination direction T6 of the slits 261 in the second region 263 is directed toward the other exhaust hole in the bottom 10b of the plasma processing chamber 10.

[0068] The baffle plate 260 according to the fourth embodiment can also achieve the same effects as those described in the first embodiment with reference to FIG. 12. That is, since the slits 261 of the baffle plate 260 are formed at an angle toward the exhaust holes, it is possible to ensure high conductance for the gas G. In addition, it is possible to reduce plasma leakage. Furthermore, it is possible to reduce contamination of the plasma processing space Sp due to recoil particles BP.

[0069] Reference Example Hereinafter, details of the slit 270 according to the reference example will be described with reference to Fig. 25. Fig. 25 is a partially enlarged cross-sectional view showing an outline of the slit 270. Fig. 26 is a partially enlarged plan view showing an outline of the slit 270.

[0070] The slit 270 according to the reference example is formed to have a generally inverted trapezoidal shape in cross section so that the entire second opening 270b can be seen from the first opening 270a in a plan view of the baffle plate 210. Specifically, the first opening 270a is formed to be larger than the second opening 270b. Furthermore, in a plan view, the wall surface 270c of the slit 270 is also visible. The ridgeline portion constituting the periphery of the slit 270 on the first surface 210p of the baffle plate 210 is referred to as the first peripheral edge 270d, and the ridgeline portion constituting the periphery of the slit 270 on the second surface 210e is referred to as the second peripheral edge 270e. In this case, the entire second peripheral edge 270e is visible in a plan view.

[0071] The slit 270 according to the reference example can reduce plasma leakage more than when the second opening 270b has the same wide width as the first opening 270a, and can ensure a higher conductance for the gas G than when the first opening 270a has the same narrow width as the second opening 270b.

[0072] Fifth Embodiment A baffle plate 300 according to a fifth embodiment will now be described with reference to Figures 27 and 28. Figure 27 is a plan view seen from above, schematically illustrating the configuration of the baffle plate 300. Figure 28 is a partially enlarged plan view of part P shown in Figure 27.

[0073] 27 , the baffle plate 300 according to the fifth embodiment includes a single region 302 in plan view in which a plurality of slits 301 are formed. The region 302 is an annular region extending in the circumferential direction of the baffle plate 300. The baffle plate 300 can be clamped by a clamp ring 211 and attached to the periphery of the substrate support 11, in the same manner as the baffle plate 210 according to the first embodiment described with reference to FIG.

[0074] 28 , the slits 301 are formed to extend linearly in a plan view. The slits 301 are also formed so that their longitudinal directions L10 are arranged in radial directions about the center O of the baffle plate 300. In other words, extensions of the longitudinal directions L10 of the multiple slits 301 intersect at the center O of the baffle plate 300.

[0075] As shown in Figures 27 and 28, each slit 301 is formed to be inclined in a direction (inclination direction T10) perpendicular to the longitudinal direction L10. In other words, the inclination direction T10 of a certain slit 301 is a direction perpendicular to the longitudinal direction L10 of that slit 301. Furthermore, the inclination directions T10 of all slits 301 are the same circumferential direction centered on the center O of the baffle plate 300, and are unified in either a clockwise or counterclockwise direction. In the example of Figures 27 and 28, the inclination direction T10 is counterclockwise. In addition, the cross-sectional configuration and the effects of the slit 301 according to the fifth embodiment are similar to those of the slit 213 according to the first embodiment or its modified example.

[0076] According to the baffle plate 300 of the fifth embodiment, the conductance of the gas G is uniform in the circumferential direction of the baffle plate 300, so that it is possible to further improve the uniformity of exhaust.

[0077] In one modified example, as shown in FIG. 29 , each slit 301 may be divided into a plurality of divided portions 301 a in the longitudinal direction L10. In other words, a single slit 301 may be formed by arranging a plurality of divided portions 301 a in the longitudinal direction L10. In one embodiment, the longitudinal direction of each divided portion 301 a may be the same as the longitudinal direction L10 of the slit 301 to be formed by that divided portion 301 a. In one embodiment, each divided portion 301 a has a substantially circular shape in a plan view and may not be slit-shaped itself. In one embodiment, the divided portions 301 a between adjacent slits 301 may be arranged in a staggered pattern.

[0078] Sixth Embodiment A baffle plate 310 according to a sixth embodiment will be described below with reference to Figs. 30 and 31. Fig. 30 is a plan view seen from above, schematically illustrating the configuration of the baffle plate 310. Fig. 31 is a partially enlarged plan view of a portion Q shown in Fig. 30.

[0079] 30 , the baffle plate 310 according to the sixth embodiment includes a single region 312 in plan view in which a plurality of slits 311 are formed. The region 312 is an annular region extending in the circumferential direction of the baffle plate 310. The baffle plate 310 can be attached to the periphery of the substrate support 11 by being clamped by a clamp ring 211, in the same manner as the baffle plate 210 according to the first embodiment described with reference to FIG.

[0080] As shown in Fig. 31 , the slits 311 are formed to extend linearly in a plan view. Similar to the slits 301 according to the fifth embodiment, the slits 311 are formed so that their longitudinal directions L10 are arranged in radial directions about the center O of the baffle plate 300. In other words, extensions of the longitudinal directions L10 of the multiple slits 311 intersect at the center O of the baffle plate 310. The slits 311 may be divided into multiple divided portions 311a, similar to the modified example of the baffle plate 300 according to the fifth embodiment shown in Fig. 29 .

[0081] 30 and 31 , each slit 311 is formed to be inclined in the same direction (inclined direction T11) as the longitudinal direction L10. The inclined direction T11 of all slits 311 is a direction from the inside to the outside of the baffle plate 310. When the slit 311 is composed of a plurality of divided portions 311a, the inclined directions of the divided portions 311a are the same as the inclined direction T11. In addition, the cross-sectional configuration and the effects of the slit 311 according to the sixth embodiment are the same as those of the slit 213 according to the first embodiment or its modified example.

[0082] According to the baffle plate 310 of the sixth embodiment, the conductance of the gas G is uniform in the circumferential direction of the baffle plate 310, so that it is possible to further improve the uniformity of exhaust.

[0083] Seventh Embodiment A baffle plate 320 according to a seventh embodiment will be described below with reference to Figs. 32 and 33. Fig. 32 is a plan view seen from above, schematically illustrating the configuration of the baffle plate 320. Fig. 33 is a partially enlarged plan view of the R portion shown in Fig. 32.

[0084] The baffle plate 320 has a plurality of regions in a plan view, namely, a first region 321a, a second region 321b, a third region 321c, and a fourth region 321d. The first to fourth regions 321a to 321d are strip-shaped regions extending in the circumferential direction of the baffle plate 320, and in this embodiment, are regions that are 90-degree symmetrical with respect to the center O of the baffle plate 320 as the origin. A plurality of slits 322 are formed in the first to fourth regions 320a to 321d. The baffle plate 320 can be attached to the periphery of the substrate support 11 by being clamped by a clamp ring 211, in the same manner as described with reference to FIG. 3 for the baffle plate 210 according to the first embodiment.

[0085] As shown in Fig. 33 , the slits 322 are formed to extend linearly in a plan view. Furthermore, similar to the baffle plate 300 according to the fifth embodiment, the slits 322 are formed so that their longitudinal directions L10 are aligned radially from the center O of the baffle plate 320. In other words, extensions of the longitudinal directions L10 of the multiple slits 322 intersect at the center O of the baffle plate 320. The slits 322 may be divided into multiple segments, similar to the modified example of the baffle plate 300 according to the fifth embodiment shown in Fig. 29 .

[0086] 32 and 33, the slits 301 are formed so as to be inclined in predetermined directions (inclined directions T12 to T15) for each of the first to fourth regions 321a to 321d. In addition, the cross-sectional configuration and effects of the slits 322 according to the seventh embodiment are similar to those of the slits 213 according to the first embodiment or its modified example.

[0087] According to the baffle plate 320 of the seventh embodiment, the conductance of the gas G is uniform in the circumferential direction of the baffle plate 320, so that it is possible to further improve the uniformity of exhaust.

[0088] Eighth Embodiment A baffle plate 330 according to an eighth embodiment will be described below with reference to Fig. 34. Fig. 34 is a cross-sectional view that schematically shows the outline of the configuration of the baffle plate 330.

[0089] As shown in FIG. 34, a baffle plate 330 according to the eighth embodiment includes a bottom portion 331 and side portions 332 that protrude vertically from a peripheral edge portion 331e of the bottom portion 331 and extend circumferentially.

[0090] The baffle plate 330 may be attached to the periphery of the substrate support 11. In this case, an inner diameter portion 331a of a bottom portion 331 of the baffle plate 330 may be configured to be clamped and held by the clamp ring 211. Furthermore, an upper portion 332a of a side portion 332 of the baffle plate 330 may be connected to a deposit shield (not shown).

[0091] The bottom portion 331 has a configuration similar to any of the baffle plates according to various embodiments of the present disclosure, except that a side portion 332 is provided at a peripheral edge portion 331 e. As shown in Fig. 34, the bottom portion 331 has a plurality of slits 341 penetrating from the upper surface side to the lower surface side of the bottom portion 331, and the slits 341 are configured similarly to any of the slits according to the present disclosure, including the various embodiments of the present disclosure.

[0092] As shown in FIG. 34 , the side portion 332 has a plurality of through holes 342. The cross-sectional shape of the through holes 342 may be a slit shape or a substantially circular shape. In this embodiment, the through holes 342 penetrate from the inside to the outside of the side portion 332 from top to bottom. In other words, the through holes 342 in the side portion 332 can be formed at the position where the baffle plate 330 is attached, from the plasma processing space Sp, which is inside the baffle plate 330, toward the exhaust space Se, which is outside the baffle plate 330. This configuration can improve exhaust conductance. In one embodiment, the through holes 342 penetrate from the inside to the outside of the side portion 332 from bottom to top.

[0093] Although the baffle plate 330 has been described above as having a configuration in which the bottom portion 331 and the side portion 332 are integrally formed, the technology of the present disclosure is not limited to such an example. The bottom portion 331 and the side portion 332 may be provided separately and connected by a desired connecting means. In one embodiment, the side portion 332 forms a part of the deposit shield. In other words, the deposit shield may have a through hole 342 similar to that of the side portion 332 according to this embodiment.

[0094] (Parameters of Baffle Plate and Slit) Hereinafter, examples of parameter configurations of the baffle plate 350 and the slits 351 that can be used as the configuration of the baffle plate and the slits provided in the baffle plate according to various embodiments of the present disclosure will be described.

[0095] Similar to various baffle plates according to various embodiments of the present disclosure, baffle plate 350 is provided with slits 351 inclined in a predetermined inclination direction T20 so as to penetrate from upper surface 350a to lower surface 350b of baffle plate 350. Figure 35 is a schematic cross-sectional view showing a cross section of baffle plate 350 parallel to inclination direction T20 of slits 351.

[0096] As shown in Figure 35, in a cross section parallel to the inclination direction T20 of the slits 351, the angle at which the diagonal lines of the cross-sectional shape of the slits 351 intersect is defined as θ. Note that the angle θ is the angle on the side facing the upper surface 350a of the baffle plate 350, as shown in Figure 35. In this case, the angle θ is preferably set so that θ < 53.1°. Specifically, the inclination angle of the inclination direction T20 of the slits 351 is adjusted together with the plate thickness of the baffle plate 350 and the hole diameter of the slits 351 in the inclination direction T10, thereby enabling the baffle plate 350 to be configured so that the angle θ is within the above-mentioned angle range.

[0097] Ninth Embodiment Hereinafter, a branched through-hole 361 provided in a baffle plate 360 ​​according to a ninth embodiment will be described. Note that the branched through-hole 361 can be used instead of or in addition to the slits according to various embodiments of the present disclosure.

[0098] 36 , the branched through-hole 361 according to this embodiment has one opening 361a in an upper surface 360a of the baffle plate 360, and has multiple openings 361b (three in the illustrated example) in a lower surface 360b of the baffle plate 360. In other words, the branched through-hole 361 branches inside the baffle plate 360.

[0099] In the branched through-hole 361, one opening 361b is visible from the opening 361a in a plan view seen from above the baffle plate 360, but the other two openings 361b are not visible. Therefore, by increasing the number of openings, exhaust conductance can be improved, while plasma leakage and recoil particles can be reduced compared to when there is no branch and only one upper surface 360a and one lower surface 360b are provided.

[0100] In one embodiment, the cross-sectional shape of the branched through-hole 361 is the same as the cross-sectional shape of the slit according to the various embodiments described above. In another embodiment, the cross-sectional shape of the branched through-hole 361 is a substantially perfect circle.

[0101] In one embodiment, the baffle plate 360 ​​can be manufactured by forming the branched through-holes 361 in an upper plate above the dotted line shown in Fig. 36 and in a lower plate below the dotted line, and then laminating the plates together. In another embodiment, the baffle plate 360 ​​can be formed using a 3D printer or the like so that the through-holes 361 are formed.

[0102] The number of openings 361a on the upper surface 360a side and the number of openings 361b on the lower surface 360b side are not limited to this, and each may be branched into any desired number.

[0103] In one embodiment, as shown in FIG. 37, the branched through-hole 361 may have three openings 361a on the upper surface 360a and one opening on the lower surface 360b.

[0104] 38, the branched through-hole 361 may be formed so that the diameter of the opening 361a on the upper surface 360a side is small and the diameter of the opening 361b on the lower surface 360b side is large, thereby further improving the conductance.

[0105] 39, the branched through-hole 361 may be formed with a larger diameter on the side closer to the lower surface 360b in the branched portion, thereby further improving the conductance without deteriorating the plasma leakage characteristics.

[0106] 40, the branched through-hole 361 may have three openings 361a on the upper surface 360a and one opening on the lower surface 360b, with the diameter of the branched portion being small, thereby further suppressing plasma leakage.

[0107] Tenth Embodiment Hereinafter, an offset through-hole 371 provided in a baffle plate 370 according to a tenth embodiment will be described. Note that the offset through-hole 371 can be used instead of or in addition to the slits according to various embodiments of the present disclosure.

[0108] 41 , the offset through-hole 371 according to this embodiment has an opening 371a in an upper surface 370a of the baffle plate 370, an opening 371b in a lower surface 370b, and a horizontal hole 371c inside the baffle plate 370. In one embodiment, the horizontal hole 371c is formed in the in-plane direction of the baffle plate 370 (a direction perpendicular to the thickness direction).

[0109] The offset through-hole 371 has a horizontal hole 371c, so that the opening 371b in the lower surface 370b cannot be seen from the opening 371a in the upper surface 370a in a plan view of the baffle plate 370 from above.

[0110] In one embodiment, the cross-sectional shape of the offset through-hole 371 is the same as the cross-sectional shape of the slit according to the various embodiments described above. In another embodiment, the cross-sectional shape of the offset through-hole 371 is a substantially perfect circle.

[0111] In one embodiment, the baffle plate 370 can be manufactured by forming offset through-holes 371 in an upper plate above the dotted line shown in Fig. 41 and a lower plate below the dotted line, and then laminating them together. In another embodiment, the baffle plate 370 can be formed using a 3D printer or the like so that the through-holes 371 are formed.

[0112] In one embodiment, as shown in FIG. 42 , the ends of the horizontal holes 371 c of the baffle plate 370 all have a circularly bulging structure in cross section. This improves the conductance of the horizontal holes 371 c. Additionally, the following secondary effect is also obtained. That is, when the baffle plate 370 is manufactured by forming offset through-holes 371 in an upper plate above the dotted line in FIG. 42 and a lower plate below the dotted line and then bonding them together, the tolerance for misalignment in the bonding position can be increased. This makes it easier to process the baffle plate 370.

[0113] 43, the offset through-hole 371 may be configured so that the diameter gradually increases from the side of the horizontal hole 371c toward the upper surface 370a or the lower surface 370b, thereby improving the conductance.

[0114] 44, the offset through-hole 371 may have a plurality of openings 371a on the upper surface 370a, two openings 371a in the illustrated example, and the through-hole formed by the two openings 371a may be configured to merge into a horizontal hole 371c, thereby improving conductance.

[0115] 45 , the offset through-hole 371 may be provided at an angle from the opening 371a to the horizontal hole 371c in the upper surface 370a so that the horizontal hole 371c cannot be seen from the opening 371a. Similarly, the offset through-hole 371 may be provided at an angle from the opening 371b to the horizontal hole 371c in the lower surface 370b so that the horizontal hole 371c cannot be seen from the opening 371b.

[0116] The embodiments disclosed herein should be considered to be illustrative in all respects and not restrictive. The above-described embodiments may be omitted, substituted, or modified in various ways without departing from the scope and spirit of the appended claims. For example, the components of the above-described embodiments may be arbitrarily combined. Such an arbitrary combination naturally provides the functions and effects of each of the components involved in the combination, and also provides other functions and effects that are apparent to those skilled in the art from the description of this specification.

[0117] Furthermore, the effects described herein are merely descriptive or exemplary and are not limiting. In other words, the technology according to the present disclosure may achieve other effects that are apparent to those skilled in the art from the description of this specification, in addition to or in place of the above-described effects.

[0118] REFERENCE SIGNS LIST 1 Plasma processing apparatus 11 Substrate support portion 210, 240, 250, 260 Baffle plate 213, 243, 251, 261 Slit 210p First surface 210e Second surface 213a First opening 213b Second opening W Substrate

Claims

1. An exhaust ring arranged around a substrate support part of a substrate processing apparatus, comprising a first surface and a second surface opposite to the first surface, wherein a plurality of slits are formed penetrating from the first surface to the second surface, and the plurality of slits are formed at an angle from the first surface to the second surface so that at least a portion of an opening on the second surface is not visible from an opening on the first surface side in a plan view.

2. An exhaust ring according to claim 1, comprising a plurality of regions in a plan view, and wherein the plurality of slits are formed so as to be inclined in different directions for each of the regions.

3. An exhaust ring as described in claim 2, wherein the multiple regions are point-symmetrical about the center of the exhaust ring, and the multiple slits extend linearly in a plan view, are formed so that the longitudinal directions of the multiple slits formed in one of the regions are parallel, and are formed at an angle perpendicular to the longitudinal direction and in a direction from the inner periphery toward the outer periphery of the exhaust ring.

4. An exhaust ring according to claim 1, wherein the plurality of slits are formed in an arc shape and are formed inclined in the radial direction of the exhaust ring, from the inner periphery toward the outer periphery of the exhaust ring.

5. An exhaust ring according to claim 1, wherein each of said plurality of slits is formed so that the longitudinal direction of said slit is arranged in a radial direction about the center of said exhaust ring.

6. An exhaust ring according to claim 5, wherein each of said slits is formed at an angle in a direction perpendicular to the longitudinal direction of said slit.

7. An exhaust ring as set forth in claim 5, wherein each of said slits is formed at an angle in the longitudinal direction of said slit.

8. An exhaust ring as described in any one of claims 1 to 7, comprising: a bottom portion having the first surface and the second surface in which the slit is formed; and a side portion protruding vertically from a peripheral edge portion of the bottom portion and extending in the circumferential direction of the bottom portion, the side portion having a through hole that passes through the side portion.

9. An exhaust ring as set forth in claim 8, wherein said through-hole penetrates said side portion from an upper inner side to a lower outer side of said side portion.

10. An exhaust ring according to any one of claims 1 to 7, wherein each of the slits is made up of a plurality of divided portions formed at an angle in the same direction as the slit.

11. An exhaust ring arranged around a substrate support part of a substrate processing apparatus, comprising: a first surface and a second surface opposite to the first surface; a plurality of branched through holes are formed which penetrate from the first surface to the second surface; each of the branched through holes is formed by branching inside the exhaust ring so that at least a portion of the opening on the second surface side is not visible from the opening on the first surface side in a plan view; and each of the branched through holes has a plurality of the openings on the second surface side.

12. An exhaust ring according to claim 11, wherein the diameter of the opening of each of the branched through holes on the second surface side is larger than the diameter of the opening on the first surface side.

13. An exhaust ring according to claim 11, wherein the diameter of the opening of each of the branched through holes on the second surface side is smaller than the diameter of the opening on the first surface side.

14. An exhaust ring arranged around a substrate support part of a substrate processing apparatus, comprising a first surface and a second surface opposite to the first surface, wherein a plurality of offset through holes are formed penetrating from the first surface to the second surface, and each of the offset through holes has a horizontal hole formed in the in-plane direction of the exhaust ring so that at least a portion of the opening on the second surface side is not visible from the opening on the first surface side in a plan view.

15. An exhaust ring according to claim 14, wherein the offset through-hole is formed so that its diameter increases from the lateral hole toward the first surface or the second surface.

16. A substrate processing apparatus for processing a substrate with plasma, comprising: a chamber; a substrate support part disposed within the chamber and supporting the substrate; an exhaust part for exhausting gas within the chamber; and an exhaust ring disposed around the substrate support part; the space within the chamber includes a first space in which the substrate is supported and a second space to which the exhaust part is connected; the exhaust ring is disposed between the first space and the second space and has a first surface on the first space side and a second surface on the second space side; a plurality of slits are formed that penetrate from the first surface to the second surface; and the plurality of slits are formed at an angle from the first surface to the second surface so that, in a plan view of the exhaust ring, an opening on the second surface cannot be seen from an opening on the first surface side.

17. The substrate processing apparatus according to claim 16, wherein the exhaust ring has a plurality of regions in a plan view, and the plurality of slits are formed so as to be inclined in different directions for each of the regions.

18. A substrate processing apparatus as described in claim 17, wherein the multiple regions are point-symmetrical with respect to the center of the exhaust ring, and the multiple slits extend linearly in a planar view, are formed so that the longitudinal directions of the multiple slits formed in one of the regions are parallel, and are formed at an angle perpendicular to the longitudinal direction and in a direction from the inner periphery of the exhaust ring to the outer periphery.

19. A substrate processing apparatus as described in claim 17 or 18, wherein the exhaust section has a plurality of exhaust holes connected to the second space, and the plurality of slits are formed in one of the regions of the exhaust ring, inclined toward one of the exhaust holes, and are formed in another of the regions of the exhaust ring, inclined toward another of the exhaust holes.

20. The substrate processing apparatus according to claim 16, wherein the plurality of slits are formed in an arc shape and are formed inclined in the radial direction of the exhaust ring, from the inner periphery toward the outer periphery of the exhaust ring.

Images