Radio frequency front-end assembly, radio frequency transceiving system and communication device

Abstract

The present application relates to the technical field of communications. Provided in the embodiments of the present application are a radio frequency front-end assembly, a radio frequency transceiving system and a communication device, which are used for improving the integration level of radio frequency front-end modules. The radio frequency front-end assembly may be divided into a first region and a second region, and a circulator and a radio frequency chip (or a passive device) are integrated in the radio frequency front-end assembly. The circulator is located in the first region, the radio frequency chip is located in the second region, and a component (a microwave ferrite layer) in the circulator serves as a carrier substrate of the radio frequency chip. Compared with discrete arrangement of devices in a radio frequency front-end module, integrating at least a portion of devices in a radio frequency front-end module on a microwave ferrite layer of a circulator can achieve the integration and miniaturization of the radio frequency front-end module, thus satisfying requirements of communication devices for the integration level of radio frequency front-end modules.

Description

Radio frequency front-end assembly, radio frequency transceiver system, and communication device

[0001] The present application claims priority to the Chinese patent application No. 202410658343.0, filed on May 24, 2024, entitled “Radio frequency front-end assembly, radio frequency transceiver system, and communication device”, the entire content of which is incorporated herein by reference. TECHNICAL FIELD

[0002] The present application relates to the field of communication technology, in particular to a radio frequency front-end assembly, a radio frequency transceiver system, and a communication device. BACKGROUND

[0003] Radio communications is a communication mode that modulates telecommunication signals such as voice, text, data, and images on radio waves and transmits them to the other party through space and the ground. With the continuous development of wireless communication systems in the direction of high speed and low latency, the number of radio frequency channels of future wireless communication devices will increase exponentially.

[0004] However, the increase in the number of system radio frequency channels puts higher integration requirements on the link of the radio frequency front-end system. Welding the devices in the radio frequency front-end module on the circuit board cannot meet the requirements of communication devices for integration. SUMMARY

[0005] The embodiments of the present application provide a radio frequency front-end assembly, a radio frequency transceiver system, and a communication device, which are used to improve the integration of the radio frequency front-end module.

[0006] To achieve the above-mentioned purpose, the present application adopts the following technical solutions:

[0007] In a first aspect, the present application provides a radio frequency front-end assembly, comprising a carrier layer, a circulator, and a radio frequency chip. The radio frequency front-end assembly can be divided into a first region and a second region. The first region is a region for the circulator, and the second region is a region for other devices included in the radio frequency front-end module. The carrier layer is located in the first region and the second region in the radio frequency front-end assembly. The material of the part of the carrier layer located in the first region includes a microwave ferrite, and the material of the part of the carrier layer located in the second region can or can not include a microwave ferrite. The circulator is located in the first region, and the circulator includes a center conductor pattern, a back metal pattern, and the part of the carrier layer located in the first region. Along the thickness direction of the carrier layer, the center conductor pattern and the back metal pattern are arranged on opposite sides of the carrier layer. Along the thickness direction of the carrier layer, the radio frequency chip is arranged inside or on one side of the carrier layer and located in the second region. The radio frequency chip can be located on the same side as the center conductor pattern, or the radio frequency chip can be located on the same side as the back metal pattern. The radio frequency chip can be any kind of chip required in the radio frequency front-end module, and one or more of the above radio frequency chips can be integrated in the radio frequency front-end assembly.

[0008] The radio frequency front-end assembly provided by the embodiments of the present application includes a circulator, which includes a center conductor pattern, a microwave ferrite layer (the part of the carrier layer located in the first region), and a back metal pattern. Based on the structure of the circulator, a radio frequency chip is integrated on the part of the carrier layer located in the second region. That is, the components of the circulator are extended to serve as the carrier of the radio frequency chip, and one or more radio frequency chips can be integrated in the radio frequency front-end assembly. Compared with the separate arrangement of the devices in the radio frequency front-end module, at least part of the devices in the radio frequency front-end module are integrated on the microwave ferrite layer of the circulator to form the radio frequency front-end assembly. Integrating the radio frequency front-end assembly in the radio frequency front-end module can realize the integration and miniaturization of the radio frequency front-end module, and meet the requirements of communication equipment on the integration of the radio frequency front-end module. In addition, after the radio frequency chip and the circulator are integrated on the carrier layer, the length of the interconnection line between the radio frequency chip and the circulator is shortened, which can reduce the loss of the interconnection line, thereby reducing the loss of the transmission link and the reception link formed by the radio frequency front-end assembly.

[0009] In a possible implementation, the radio frequency chip is a bare chip. Integrating the bare chip directly on the carrier layer can significantly save the space occupied by packaging compared with the separate arrangement of a single packaged chip, further improving the integration and miniaturization of the radio frequency front-end assembly, and meeting the requirements of communication equipment on the integration of the radio frequency front-end module. Further, the bare chip can be integrated into the radio frequency devices in the transmission link and / or the reception link of the radio frequency front-end assembly.

[0010] In a possible implementation, the radio frequency chip includes one or more of a power amplifier chip, a low noise amplifier chip, a filter chip, a duplexer chip, and a radio frequency switch chip. The devices required in the link of the radio frequency front-end module can be integrated with the circulator.

[0011] In a possible implementation, the material of the carrier layer at the part of the second area also includes a microwave ferrite. When the material of the carrier layer at the part of the second area also includes a microwave ferrite, the interconnection wiring uses the microwave ferrite as a dielectric material when the devices in the radio frequency front-end assembly are interconnected. When the discrete devices are interconnected on the circuit board, the interconnection wiring uses polypropylene as a dielectric material. The tangent value of the loss of the microwave ferrite is lower than that of the polypropylene, and therefore, the loss of the interconnection wiring formed on the microwave ferrite is low, which can further reduce the loss of the transmission link and the reception link formed by the radio frequency front-end assembly.

[0012] In a possible implementation, the radio frequency front-end assembly further includes a passive device, and the passive device is located in the second area. The passive device is arranged in the carrier layer or along the thickness direction of the carrier layer, or the passive device is arranged on one side of the carrier layer. By integrating the passive device in the radio frequency front-end assembly, it is not necessary to separately arrange discrete resistors, capacitors, inductors, and the like, so as to further improve the integration of the radio frequency front-end module.

[0013] In a possible implementation, the carrier layer further includes a plurality of wiring layers, and the plurality of wiring layers are arranged at intervals along the thickness direction of the carrier layer. The passive device is integrated in the plurality of wiring layers. By designing the pattern of the wiring layer, the passive device such as a capacitor, an inductor, and a resistor can be integrated in the plurality of wiring layers, so that the radio frequency front-end assembly can integrate not only the radio frequency chip but also the passive device.

[0014] In a possible implementation, the carrier layer includes a plurality of microwave ferrite layers located in the first area and the second area, and the microwave ferrite layers are arranged between adjacent wiring layers. The microwave ferrite is used as a dielectric material when the devices in the radio frequency front-end assembly are interconnected. Polypropylene is used as a dielectric material when the discrete devices are interconnected on the circuit board. The dielectric constant of the microwave ferrite is lower than that of the polypropylene, and the tangent value of the loss of the microwave ferrite is lower than that of the polypropylene, and therefore, the loss of the passive device formed on the microwave ferrite is low, which can reduce the loss of the transmission link and the reception link formed by the radio frequency front-end assembly.

[0015] In a possible implementation, the carrier layer comprises at least one microwave ferrite layer and at least one non-microwave ferrite layer which are arranged in the first region and the second region; and the non-microwave ferrite layer or the microwave ferrite layer is arranged between adjacent trace layers. The carrier layer is formed by a set of materials with different characteristics, which on one hand guarantees the normal performance of the circulator by means of the microwave ferrite layer, and on the other hand improves the performance of the trace layer by means of the non-microwave ferrite layer.

[0016] In a possible implementation, the carrier layer comprises a first part and a second part, the first part is arranged in the first region, and the second part is arranged in the second region; the first part comprises at least one first microwave ferrite layer; and the second part comprises a plurality of non-microwave ferrite layers, and the non-microwave ferrite layer is arranged between adjacent trace layers. The carrier layer is formed by a set of materials with different characteristics, which on one hand guarantees the normal performance of the circulator by means of the microwave ferrite layer, and on the other hand improves the performance of the trace layer by means of the non-microwave ferrite layer.

[0017] In a possible implementation, the second part further comprises at least one second microwave ferrite layer which is connected to the plurality of non-microwave ferrite layers, and at least one trace layer extends to the surface of the second microwave ferrite layer. By arranging the trace layer on the surface of the microwave ferrite layer and the non-microwave ferrite layer respectively, the advantages of the microwave ferrite layer and the non-microwave ferrite layer can be utilized to optimize the performance of the trace layer and the passive device integrated in the trace layer to the greatest extent.

[0018] In a possible implementation, the dielectric constant of the material of the non-microwave ferrite layer is greater than the dielectric constant of the microwave ferrite. By arranging the non-microwave ferrite layer with high dielectric constant and low loss in the carrier layer, and arranging the trace layer on the non-microwave ferrite layer, when the passive device such as a capacitor is integrated in the trace layer, a capacitor with a large capacitance value can be obtained with a small size, which is conducive to the miniaturization design of the radio frequency front-end assembly.

[0019] In a possible implementation, the magnetic permeability of the material of the non-microwave ferrite layer is greater than the magnetic permeability of the microwave ferrite. By arranging the non-microwave ferrite layer with high magnetic permeability in the carrier layer, and arranging the trace layer on the non-microwave ferrite layer, when the passive device such as an inductor is integrated in the trace layer, an inductor with a large inductance value can be obtained with a small size, which is conducive to the miniaturization design of the radio frequency front-end assembly.

[0020] In a possible implementation, the radio frequency front-end assembly further comprises a first conductive pattern, the first conductive pattern is arranged on one side of the carrier layer and located in the second region; and the radio frequency chip is arranged on the side of the first conductive pattern away from the carrier layer, and the radio frequency chip is coupled to the first conductive pattern. The radio frequency chip and the center conductor pattern are located on the same side, which can simplify the connection mode of the radio frequency chip and the center conductor pattern.

[0021] In a possible implementation, the radio frequency front-end assembly further includes a second conductive pattern; the second conductive pattern is arranged on the side of the carrier layer away from the first conductive pattern and located in the second region; and the first conductive pattern is coupled with the second conductive pattern. The second conductive pattern can be arranged to meet the grounding requirement of the radio frequency chip coupled with the first conductive pattern.

[0022] In a possible implementation, the radio frequency front-end assembly further includes a first conductive pattern and a second conductive pattern; the first conductive pattern and the second conductive pattern are located in the second region and arranged on opposite sides of the carrier layer along the thickness direction of the carrier layer; the carrier layer includes a conductive hole and a microwave ferrite layer located in the first region and the second region, the conductive hole penetrates through the microwave ferrite layer, and the first conductive pattern and the second conductive pattern are coupled through the conductive hole. The carrier layer is only provided with the conductive hole and is not provided with a wiring layer, and thus the design of the carrier layer can be simplified.

[0023] In a possible implementation, the radio frequency front-end assembly further includes a first conductive pattern and a second conductive pattern; the first conductive pattern and the second conductive pattern are located in the second region and arranged on opposite sides of the carrier layer along the thickness direction of the carrier layer; the carrier layer includes a conductive hole and a microwave ferrite layer located in the first region and the second region, the conductive hole penetrates through the microwave ferrite layer, and the first conductive pattern and the second conductive pattern are coupled through the conductive hole. The carrier layer is only provided with the conductive hole and is not provided with a wiring layer, and thus the design of the carrier layer can be simplified.

[0024] The radio frequency front-end assembly provided in the embodiments of the present application includes a circulator, the circulator includes a center conductor pattern, a microwave ferrite layer (a part of the carrier layer located in the first region), and a back metal pattern. On the basis of the structure of the circulator, the passive device is integrated in the part of the carrier layer located in the second region. The components of the circulator are extended to serve as the carrier of the passive device, and one or more passive devices can be integrated in the radio frequency front-end assembly. Compared with the separate arrangement of the devices in the radio frequency front-end module, the integration and miniaturization of the radio frequency front-end module can be achieved by integrating at least part of the devices in the radio frequency front-end module on the microwave ferrite layer of the circulator, so as to meet the requirement of the communication equipment on the integration of the radio frequency front-end module. In addition, after the passive device and the circulator are integrated on the carrier layer, the length of the interconnection wiring between the passive device and the circulator is shortened, and thus the loss of the interconnection wiring can be reduced, so as to reduce the loss of the transmission link and the reception link constituted by the radio frequency front-end assembly.

[0025] In a possible implementation, the radio frequency front-end component further includes a radio frequency chip; the radio frequency chip is arranged on one side of the carrier layer and located in the second area along the thickness direction of the carrier layer. The radio frequency chip can be integrated in the radio frequency front-end component, and the radio frequency chip integrated in the radio frequency front-end component can reduce the number of discrete devices in the radio frequency front-end module and further improve the integration of the radio frequency front-end module.

[0026] In a possible implementation, the radio frequency chip is a bare chip. The bare chip is directly integrated on the carrier layer, which can significantly save the space occupied by packaging compared with discrete arrangement of a single packaged chip, further improve the integration and miniaturization of the radio frequency front-end component, and meet the requirement of the communication device on the integration of the radio frequency front-end module. Further, the bare chip can be integrated into a radio frequency device in the transmit chain and / or the receive chain of the radio frequency front-end component.

[0027] In a possible implementation, the radio frequency chip includes one or more of a power amplifier chip, a low-noise amplifier chip, a filter chip, a duplexer chip, and a radio frequency switch chip. The devices required in the chain of the radio frequency front-end module can be integrated with the circulator.

[0028] In a possible implementation, the material of the part of the carrier layer located in the second area also includes a microwave ferrite. When the material of the part of the carrier layer located in the second area also includes a microwave ferrite, the interconnection wiring uses the microwave ferrite as a dielectric material when the devices in the radio frequency front-end component are interconnected. When the discrete devices are interconnected on the circuit board, the interconnection wiring uses polypropylene as a dielectric material. The loss tangent of the microwave ferrite is lower than that of the polypropylene, and therefore, the loss of the interconnection wiring formed on the microwave ferrite is low, which can further reduce the loss of the transmit chain and the receive chain formed by the radio frequency front-end component.

[0029] In a possible implementation, the carrier layer further includes a plurality of wiring layers; the plurality of wiring layers are arranged at intervals along the thickness direction of the carrier layer; and the passive devices are integrated in the plurality of wiring layers. By designing the pattern of the wiring layer, the passive devices such as capacitors, inductors, and resistors can be integrated in the plurality of wiring layers, so that the radio frequency front-end component can integrate not only the radio frequency chip but also the passive devices.

[0030] In a possible implementation, the carrier layer includes a plurality of layers of microwave ferrite layers located in the first region and the second region, and the microwave ferrite layers are arranged between adjacent trace layers. When the devices in the radio frequency front-end assembly are interconnected, the microwave ferrite is used as a dielectric material. When the discrete devices are interconnected on the circuit board, the polypropylene is used as a dielectric material. The dielectric constant of the microwave ferrite is lower than that of the polypropylene, and the loss tangent of the microwave ferrite is lower than that of the polypropylene. Therefore, the loss of the all-gap device formed on the microwave ferrite is low, and the loss of the transmit chain and the receive chain formed by the radio frequency front-end assembly can be reduced.

[0031] In a possible implementation, the carrier layer includes at least one layer of microwave ferrite layers and at least one layer of non-microwave ferrite layers which are stacked and located in the first region and the second region; and the non-microwave ferrite layers or the microwave ferrite layers are arranged between adjacent trace layers. A plurality of materials with different characteristics are used to form the carrier layer, which on one hand guarantees the normal performance of the circulator by means of the microwave ferrite layers, and on the other hand improves the performance of the trace layers by means of the non-microwave ferrite layers.

[0032] In a possible implementation, the carrier layer includes a first part and a second part, the first part is located in the first region, and the second part is located in the second region; the first part includes at least one layer of first microwave ferrite layers; and the second part includes a plurality of layers of non-microwave ferrite layers, and the non-microwave ferrite layers are arranged between adjacent trace layers. A plurality of materials with different characteristics are used to form the carrier layer, which on one hand guarantees the normal performance of the circulator by means of the microwave ferrite layers, and on the other hand improves the performance of the trace layers by means of the non-microwave ferrite layers.

[0033] In a possible implementation, the second part further includes at least one layer of second microwave ferrite layers connected to the plurality of layers of non-microwave ferrite layers in a one-to-one manner, and at least one trace layer extends to the surface of the second microwave ferrite layer. By arranging the trace layers on the surfaces of the microwave ferrite layers and the non-microwave ferrite layers respectively, the advantages of the microwave ferrite layers and the non-microwave ferrite layers can be utilized to optimize the performance of the trace layers and the passive devices integrated in the trace layers to the greatest extent.

[0034] In a possible implementation, the dielectric constant of the material of the non-microwave ferrite layer is greater than the dielectric constant of the microwave ferrite. By arranging the non-microwave ferrite layer with high dielectric constant and low loss in the carrier layer, and arranging the trace layer on the non-microwave ferrite layer, when the passive devices such as capacitors are integrated in the trace layer, a capacitor with a larger capacitance value can be obtained with a smaller size, which is beneficial to the miniaturization design of the radio frequency front-end assembly.

[0035] In a possible implementation, the material of the non-microwave ferrite layer has a magnetic permeability greater than that of the microwave ferrite. By arranging the non-microwave ferrite layer with high magnetic permeability in the carrier layer, and arranging the wiring layer in the non-microwave ferrite layer. In this way, when integrating passive devices such as inductors in the wiring layer, an inductor with a larger inductance value can be obtained with a smaller size, which is conducive to the miniaturization design of the radio frequency front-end assembly.

[0036] In a possible implementation, the radio frequency front-end assembly further includes a first conductive pattern, the first conductive pattern is arranged on one side of the carrier layer and located in the second region; the radio frequency chip is arranged on a side of the first conductive pattern away from the carrier layer, and the radio frequency chip is coupled with the first conductive pattern. The radio frequency chip and the center conductor pattern are located on the same side, and the connection mode of the radio frequency chip and the center conductor pattern can be simplified.

[0037] In a possible implementation, the radio frequency front-end assembly further includes a second conductive pattern; the second conductive pattern is arranged on a side of the carrier layer away from the first conductive pattern and located in the second region; the first conductive pattern is coupled with the second conductive pattern. By arranging the second conductive pattern, the grounding requirement of the radio frequency chip coupled with the first conductive pattern can be met.

[0038] In a possible implementation, the radio frequency front-end assembly further includes a first conductive pattern and a second conductive pattern; the first conductive pattern and the second conductive pattern are located in the second region and arranged on opposite sides of the carrier layer along the thickness direction of the carrier layer; the carrier layer includes a conductive hole and a microwave ferrite layer located in the first region and the second region, the conductive hole penetrates the microwave ferrite layer, and the first conductive pattern and the second conductive pattern are coupled through the conductive hole. Only the conductive hole is arranged in the carrier layer, and no wiring layer is arranged, so that the design of the carrier layer can be simplified.

[0039] In a possible implementation, the radio frequency front-end assembly further includes a first conductive pattern and a second conductive pattern; the first conductive pattern and the second conductive pattern are located in the second region and arranged on opposite sides of the carrier layer along the thickness direction of the carrier layer; the carrier layer includes a conductive hole and a microwave ferrite layer located in the first region and the second region, the conductive hole penetrates the microwave ferrite layer, and the first conductive pattern and the second conductive pattern are coupled through the conductive hole. Only the conductive hole is arranged in the carrier layer, and no wiring layer is arranged, so that the design of the carrier layer can be simplified.

[0040] In a possible implementation, the radio frequency front-end assembly further includes a first conductive pattern and a second conductive pattern; the first conductive pattern and the second conductive pattern are located in the second region and arranged on opposite sides of the carrier layer along the thickness direction of the carrier layer; the carrier layer includes a conductive hole and a microwave ferrite layer located in the first region and the second region, the conductive hole penetrates the microwave ferrite layer, and the first conductive pattern and the second conductive pattern are coupled through the conductive hole. Only the conductive hole is arranged in the carrier layer, and no wiring layer is arranged, so that the design of the carrier layer can be simplified. BRIEF DESCRIPTION OF DRAWINGS

[0041] FIG. 1 is a structural schematic diagram of a base station provided by an embodiment of the present application;

[0042] Figure 2A is a topological diagram of a radio frequency front end module according to embodiments of the application;

[0043] Figure 2B is a layout diagram of some components of a dual channel link according to embodiments of the application;

[0044] Figure 2C is a cross-sectional view of some components of a radio frequency front end system according to embodiments of the application;

[0045] Figures 3A-3D are component diagrams of a radio frequency front end assembly according to embodiments of the application;

[0046] Figures 4A and 4B are cross-sectional views of a radio frequency front end assembly according to embodiments of the application;

[0047] Figures 5A and 5B are structural diagrams of a circulator according to embodiments of the application;

[0048] Figure 6 is a cross-sectional view of a radio frequency front end assembly according to embodiments of the application;

[0049] Figure 7 is a cross-sectional view of a radio frequency front end assembly according to embodiments of the application;

[0050] Figure 8A is a component diagram of a radio frequency front end assembly according to embodiments of the application;

[0051] Figure 8B is a cross-sectional view of a radio frequency front end assembly according to embodiments of the application;

[0052] Figure 9A is a cross-sectional view of a radio frequency front end assembly according to embodiments of the application;

[0053] Figure 9B is a cross-sectional view of a radio frequency front end assembly according to embodiments of the application;

[0054] Figure 10A is a cross-sectional view of a radio frequency front end assembly according to embodiments of the application;

[0055] Figure 10B is a cross-sectional view of a radio frequency front end assembly according to embodiments of the application;

[0056] Figure 10C is a cross-sectional view of a radio frequency front end assembly according to embodiments of the application;

[0057] Figure 11A is a cross-sectional view of a radio frequency front end assembly according to embodiments of the application;

[0058] Figure 11B is a cross-sectional view of a radio frequency front end assembly according to embodiments of the application;

[0059] Figure 12A is a cross-sectional view of a radio frequency front end assembly according to embodiments of the application;

[0060] Fig. 12B is a sectional view of a radio frequency front-end assembly according to an embodiment of the present application.

[0061] Reference numerals: 100 - base station; 1 - radio frequency front-end assembly; 10 - carrier layer; 11 - first part; 12 - second part; 13 - conductive hole; 14 - wiring layer; 15 - microwave ferrite layer; 151 - first microwave ferrite layer; 152 - second microwave ferrite layer; 16 - non-microwave ferrite layer; 21 - center conductor pattern; 22 - first conductive pattern; 31 - back metal pattern; 32 - second conductive pattern; 40 - radio frequency chip; 50 - circulator; 51 - permanent magnet layer; 52 - insulating dielectric layer; 60 - passive device; A1 - first area; A2 - second area. DETAILED DESCRIPTION

[0062] The technical solutions in the embodiments of the present application will be described below with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are only some of the embodiments of the present application, but not all of the embodiments of the present application.

[0063] Hereinafter, the terms "second", "first", and the like are only used for description convenience, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined with "second", "first", and the like can explicitly or implicitly include one or more of the features. In the description of the present application, unless otherwise specified, the meaning of "a plurality of" is two or more.

[0064] In addition, in the embodiments of the present application, the orientation terms such as "upper", "lower", "left", "right", and the like can include but are not limited to the orientation defined by the relative placement of the components in the drawings. It should be understood that these directional terms can be relative concepts, which are used for relative description and clarification, and can be changed accordingly according to the change of the placement of the components in the drawings.

[0065] In the embodiments of the present application, unless otherwise explicitly specified and limited, the term "connection" should be understood in a broad sense, for example, "connection" can be fixed connection, or detachable connection, or integral; can be directly connected, or indirectly connected through an intermediate medium. In addition, the term "coupling" can be direct electrical connection, or indirect electrical connection through an intermediate medium. The term "contact" can be direct contact, or indirect contact through an intermediate medium.

[0066] In the embodiments of the present application, "and / or" describes the association relationship of the associated objects, which means that there can be three kinds of relationships, for example, A and / or B, which can represent the following three cases: A exists alone, A and B exist together, and B exists alone, where A and B can be singular or plural. The character " / " generally represents an "or" relationship between the front and rear associated objects.

[0067] The technical solution of the present application can be applied to various communication devices containing a radio frequency front-end module. The communication device can be deployed on land, including indoors or outdoors, handheld or vehicle-mounted. It can also be deployed on the water surface (such as ships, etc.). It can also be deployed in the air (such as airplanes, balloons, and satellites, etc.). For example, the communication device can be a terminal, a base station, or a router. For example, the terminal includes but is not limited to: a mobile phone, a tablet computer, a notebook computer, a palm computer, a mobile internet device (MID), a wearable device (such as a smart watch, a smart bracelet, a pedometer, etc.), a vehicle-mounted device (such as a car, a bicycle, an electric vehicle, an airplane, a ship, a train, a high-speed rail, etc.), a virtual reality (VR) device, an augmented reality (AR) device, a wireless terminal in industrial control, a smart home device (such as a refrigerator, a television, an air conditioner, an electricity meter, etc.), a smart robot, a workshop device, a wireless terminal in self-driving, a wireless terminal in remote medical surgery, a wireless terminal in a smart grid, a wireless terminal in transportation safety, a wireless terminal in a smart city, or a wireless terminal in a smart home, a flight device (such as a smart robot, a hot air balloon, a drone, an airplane), etc. The base station includes but is not limited to: a radio frequency remote unit (RRU), a massive multiple input multiple output (MM) unit, a small base station, an oracle database unloader (ODU), etc.

[0068] The present application does not make special restrictions on the specific form of the above-mentioned communication device, and the following embodiments are exemplarily described by taking the communication device as a base station.

[0069] FIG. 1 is a structural schematic diagram of a base station provided by an embodiment of the present application.

[0070] As shown in FIG. 1, the base station 100 provided by the embodiment of the present application includes a central unit (CU), a distributed unit (DU), and a radio frequency transceiver system.

[0071] The DU is mainly used to process radio link control (RLC), medium access control (MAC) and part of the port physical layer (PHY) functions. The DU is connected with the CU, and the operation of the DU is controlled by the CU, and the CU can centrally manage multiple DUs through the fronthaul interface.

[0072] The CU is also responsible for processing the central unit of high-layer protocols such as radio resource control (RRC) and packet data convergence protocol (PDCP).

[0073] The radio frequency transceiver system is connected with the DU, and the radio frequency transceiver system is mainly used for transmitting and radiating radio frequency signals from the transmitter module, establishing a downlink from the base station to the terminal device, and receiving and transmitting uplink signals from the terminal device, establishing an uplink from the terminal device to the base station.

[0074] For example, the radio frequency transceiver system includes a cable, a radio unit (RU), and an antenna. The DU is connected with the RU through the cable. The RU is responsible for the components of the bottom layer physical layer processing, including the analog components of the radio transmitter and receiver. The antenna is a device for receiving and radiating wireless signals in the base station 100, and the antenna converts the received wireless signals into electrical signals and transmits the electrical signals to the inside of the base station. At the same time, the antenna is also responsible for converting the radio frequency signals of the base station into wireless signals in order to radiate signals to the terminal device.

[0075] The radio frequency (RF) front-end module is an important component for the RU to realize wireless communication. Each radio frequency channel of the wireless base station product contains a transmitting link and a receiving link, therefore, the radio frequency front-end module can be used for receiving and sending signals in the information or conversation process.

[0076] FIG. 2A is a topological schematic diagram of a radio frequency front-end module provided by an embodiment of the present application.

[0077] Taking a time-division duplex (TDD) system as an example, the structure of the radio frequency front-end module is schematically described. As shown in FIG. 2A, the radio frequency front-end module includes a transmitter (TX) and a receiver (RX), the transmitter TX includes a power amplifier (PA), a coupler, a circulator, and a filter, and the receiver RX includes a low noise amplifier (LNA) and a radio frequency switch.

[0078] In the transmitter TX, the radio frequency output end of the PA is coupled with the input end of the coupler, the radio frequency input end of the LNA in the receiver RX is coupled with the radio frequency switch, the circulator is coupled with the coupler, the radio frequency switch, and the filter, and the filter is further coupled with the antenna.

[0079] The baseband signal is transmitted to the transmitter TX through the transceiver, the transmitter TX amplifies the received radio frequency signal and outputs the radio frequency signal to the antenna, and the radio frequency signal is transmitted through the antenna. The PA is responsible for amplifying the radio frequency signal of the transmitter TX.

[0080] The receiver RX receives the radio frequency signal from the antenna, the radio frequency signal is amplified by the receiver RX and output, and the baseband signal is transmitted through the transceiver. The LNA is responsible for amplifying the radio frequency signal of the receiver RX.

[0081] FIG. 2B is a layout diagram of some devices in a dual-channel link provided by an embodiment of the present application, and FIG. 2C is a cross-sectional view of some devices in a radio frequency front-end system provided by an embodiment of the present application.

[0082] At present, the radio frequency front-end module of the wireless base station product usually adopts the design of discrete devices, and the PA, the coupler, the circulator, the LNA, the radio frequency switch and the like are assembled by welding in a region of the circuit board. As shown in FIG. 2B and FIG. 2C, the layout diagram of the PA and the circulator is schematically shown. In general, the input and output ends of the PA and the LNA need to be provided with a matching network to match the impedance of the coupled devices. Therefore, the output matching network and the input matching network are also welded on the circuit board.

[0083] However, with the continuous development of the wireless communication system in the direction of high speed and low latency, the number of radio frequency channels of the future wireless base station product will gradually develop from the current common 32 channels to 128 channels or even 512 channels. The increase in the number of system radio frequency channels puts higher integration requirements on the link of the radio frequency front-end system. Welding the devices in the radio frequency front-end module on the circuit board cannot meet the requirements of the integration of the communication equipment.

[0084] The embodiment of the present application provides a radio frequency front-end component, which integrates multiple devices in a radio frequency front-end module into one component, so as to improve the problem of insufficient integration of the radio frequency front-end module arranged separately. The radio frequency front-end component provided by the embodiment of the present application can include all devices in the radio frequency front-end module, or can include only part of the devices in the radio frequency front-end module. In addition, the radio frequency front-end component can be a packaged device, or can be an unpackaged device. For example, the radio frequency front-end component includes all devices in the radio frequency front-end module, and the radio frequency front-end component can be regarded as a radio frequency front-end module.

[0085] FIGS. 3A-3D are schematic diagrams of components of a radio frequency front-end component provided by the embodiment of the present application.

[0086] As shown in FIG. 3A, the embodiment of the present application provides a radio frequency front-end component 1, which can be divided into a first area A1 and a second area A2, and the radio frequency front-end component 1 is integrated with a circulator 50 and a radio frequency chip 40. The circulator 50 is located in the first area A1, and the radio frequency chip 40 is located in the second area A2. The division profile of the first area A1 and the second area A2 in the radio frequency front-end component 1 can be adjusted in combination with the layout of the radio frequency front-end component 1, the area provided with the circulator 50 is the first area A1 of the radio frequency front-end component 1, and the other areas belong to the second area A2 of the radio frequency front-end component 1.

[0087] In the embodiment of the present application, the radio frequency chip 40 integrated in the radio frequency front-end component 1 can include one or more of a power amplifier chip, a low-noise amplifier chip, a filter chip, a duplexer chip and a radio frequency switch chip.

[0088] For example, the radio frequency front-end component 1 is integrated with one radio frequency chip 40. For example, as shown in FIG. 3A, the radio frequency chip 40 is a power amplifier chip, and the radio frequency front-end component 1 is integrated with the circulator 50 and the power amplifier chip.

[0089] For example, the radio frequency front-end component 1 is integrated with two radio frequency chips 40. For example, as shown in FIG. 3B, the radio frequency chip 40 is a power amplifier chip and a filter chip, and the radio frequency front-end component 1 is integrated with the circulator 50, the power amplifier chip and the filter chip.

[0090] For example, the radio frequency front-end component 1 is integrated with three radio frequency chips 40. For example, as shown in FIG. 3C, the radio frequency chip 40 is a power amplifier chip, a low-noise amplifier chip and a radio frequency switch chip, and the radio frequency front-end component 1 is integrated with the circulator 50, the power amplifier chip, the low-noise amplifier chip and the radio frequency switch chip.

[0091] Alternatively, the example is that more than three RF chips 40 are integrated in the RF front-end assembly 1. For example, as shown in FIG. 3D, the RF chip 40 includes a power amplifier chip, a filter chip, a low noise amplifier chip, and a RF switch chip, and the RF front-end assembly 1 integrates all the chips required by the RF front-end module, such as the circulator 50, the power amplifier chip, the filter chip, the low noise amplifier chip, and the RF switch chip.

[0092] FIGS. 4A and 4B are sectional views of an RF front-end assembly according to an embodiment of the present application.

[0093] In some embodiments, as shown in FIGS. 4A and 4B, the RF front-end assembly 1 includes a carrier layer 10, which covers the first area A1 and the second area A2 of the RF front-end assembly 1, and the first area A1 and the second area A2 of the RF front-end assembly 1 can also be regarded as the first area A1 and the second area A2 of the carrier layer 10. The material of the first part 11 of the first area A1 where the carrier layer 10 is located includes microwave ferrites, and the first part 11 of the first area A1 where the carrier layer 10 is located serves as a portion of the gyromagnetic material of the circulator 50. The material of the second part 12 of the second area A2 where the carrier layer 10 is located can or can not include microwave ferrites. The first part 11 of the first area A1 where the carrier layer 10 is located serves as a portion of the circulator 50, and the second part 12 of the second area A2 where the carrier layer 10 is located serves as a substrate of the RF front-end assembly 1, which is used to integrate other devices in the RF front-end module. The aforementioned devices can be arranged on the surface of the second part 12 or integrated in the interior of the second part 12.

[0094] The microwave ferrites, also known as gyromagnetic materials, are a class of materials with anisotropic properties.

[0095] The circulator 50 includes the center conductor pattern 21, the back metal pattern 31, and the first part 11 of the first area A1 where the carrier layer 10 is located. Along the thickness direction of the carrier layer 10, the center conductor pattern 21 and the back metal pattern 31 are arranged on opposite sides of the first part 11. The center conductor pattern 21, the back metal pattern 31, and the first part 11 of the first area A1 where the carrier layer 10 is located serve as components of the circulator 50. The shape of the center conductor pattern 21 and the back metal pattern 31 is not specifically limited in the embodiments of the present application, and the center conductor pattern 21 and the back metal pattern 31 only need to match the selected circulator 50 in the RF front-end assembly 1.

[0096] In some embodiments, along the thickness direction of the carrier layer 10, the RF chip 40 is arranged on one side of the carrier layer 10. The RF chip 40 can be located on the same side as the center conductor pattern 21, or the RF chip 40 can be located on the same side as the back metal pattern 31. In the embodiments of the present application, only the case where the RF chip 40 is located on the same side as the center conductor pattern 21 is taken as an example for illustration.

[0097] In some embodiments, the radio frequency chip 40 is disposed in the carrier layer 10.

[0098] FIGS. 5A and 5B are structural schematic diagrams of a circulator provided by embodiments of the present application.

[0099] For example, as shown in FIGS. 4A and 5A, the material of the first portion 11 includes a self-biased ferrite material in a microwave ferrite, and the circulator 50 includes the center conductor pattern 21, the first portion 11, and the back metal pattern 31.

[0100] The circulator 50 is a device for unidirectional transmission of high-frequency electromagnetic wave signals. The principle of unidirectional transmission is to use the tensor magnetic permeability characteristics of the microwave ferrite material to cause polarization rotation of the electromagnetic wave propagating in the microwave ferrite material. That is, the tensor magnetic permeability characteristics of the circulator 50 are provided by the microwave ferrite material (the first portion 11 in the carrier layer 10).

[0101] Alternatively, for example, as shown in FIGS. 4B and 5B, the material of the first portion includes a non-self-biased ferrite material in a microwave ferrite, and the circulator 50 includes the center conductor pattern 21, the first portion 11, and the back metal pattern 31, and further includes a permanent magnet layer 51 and an insulating dielectric layer 52, which is disposed between the center conductor pattern 21 and the permanent magnet layer 51.

[0102] Of course, the above is only a schematic description of the structure of the circulator 50 in the radio frequency front-end assembly 1 provided by embodiments of the present application, and does not constitute a limitation on the structure of the circulator 50 provided by embodiments of the present application.

[0103] The radio frequency front-end assembly 1 provided by the embodiment of the present application comprises a circulator 50, the circulator 50 comprising a center conductor pattern 21, a microwave ferrite layer (a part of the carrier layer 10 located in the first area A1), and a back metal pattern 31. Based on the structure of the circulator 50, the radio frequency chip 40 is integrated on a part of the carrier layer 10 located in the second area A2. The components of the circulator 50 are extended as the carrier of the radio frequency chip 40, and one or more radio frequency chips 40 can be integrated in the radio frequency front-end assembly 1. Compared with the separate arrangement of the devices in the radio frequency front-end module, the integration of at least part of the devices in the radio frequency front-end module on the microwave ferrite layer of the circulator 50 can realize the integration and miniaturization of the radio frequency front-end module, and meet the requirement of the communication equipment on the integration of the radio frequency front-end module. It is found through simulation that, compared with the direct arrangement of the non-integrated discrete devices on the circuit board, the arrangement of the integrated radio frequency front-end assembly 1 on the circuit board can reduce the module area on the board by about 75%, and reduce the cost of a single channel by about 50%. In addition, after the radio frequency chip 40 and the circulator 50 are integrated on the carrier layer 10, the length of the interconnection wire between the radio frequency chip 40 and the circulator 50 is shortened, which can reduce the loss of the interconnection wire, thereby reducing the loss of the transmission link and the reception link formed by the radio frequency front-end assembly 1.

[0104] In some embodiments, the radio frequency chips 40 integrated in the radio frequency front-end assembly 1 are all die. Alternatively, it is understood that the die can be directly integrated with the circulator 50 without forming a packaged device and then being integrated with the circulator 50.

[0105] Direct integration of the die of one or more radio frequency devices required in the transmission link and the reception link of the radio frequency front-end module can obviously save the space occupied by the package compared with the separate arrangement of the single packaged radio frequency device, and can further improve the integration, miniaturization and low loss of the radio frequency front-end module, and meet the requirement of the communication equipment on the integration of the radio frequency front-end module.

[0106] Next, the structure of the carrier layer 10 is schematically described.

[0107] In some embodiments, the material of the second part 12 of the carrier layer 10 also comprises microwave ferrite.

[0108] When the material of the second part 12 also comprises microwave ferrite, the interconnection wire uses microwave ferrite as the dielectric material when the devices in the radio frequency front-end assembly 1 are interconnected. When the discrete devices are interconnected on the circuit board, the interconnection wire uses polypropylene as the dielectric material. The loss tangent of the microwave ferrite is lower than that of the polypropylene, and therefore the loss of the interconnection wire formed on the microwave ferrite is low, which can further reduce the loss of the transmission link and the reception link formed by the radio frequency front-end assembly 1.

[0109] Fig. 6 is a sectional view of a radio frequency front-end module according to an embodiment of the present application.

[0110] In the first implementation, as shown in Fig. 6, the carrier layer 10 is a bulk structure, and the materials of the first portion 11 and the second portion 12 of the carrier layer 10 both include microwave ferrite. For example, the carrier layer 10 is made by flow casting, die casting or other processes. For example, the carrier layer 10 is a bulk microwave ferrite layer, and the first portion 11 and the second portion 12 are integrally formed structures.

[0111] In some embodiments, as shown in Fig. 6, the radio frequency front-end module 1 further includes a first conductive pattern 22 located in the second area A2, and the radio frequency chip 40 is coupled to the first conductive pattern 22 for signal transmission. The first conductive pattern 22 can further include traces, pads, capacitors, resistors, inductors, etc., and the embodiments of the present application do not make specific limitations on the first conductive pattern 22.

[0112] The first conductive pattern 22 can be located on the same side as the center conductor pattern 21, for example, both are located on the same layer. The first conductive pattern 22 can also be located on the same side as the back metal pattern 31, for example, both are located on the same layer.

[0113] Fig. 7 is a sectional view of a radio frequency front-end module according to an embodiment of the present application.

[0114] In the second implementation, as shown in Fig. 7, the carrier layer 10 is a single layer structure, and the materials of the first portion 11 located in the first area A1 and the second portion 12 located in the second area A2 both include microwave ferrite. The carrier layer 10 is internally provided with a conductive hole 13, for example, located in the second portion 12. For example, the carrier layer 10 is a microwave ferrite layer, and the microwave ferrite layer is internally provided with a conductive hole penetrating through the microwave ferrite layer.

[0115] The radio frequency front-end module 1 further includes a first conductive pattern 22 located in the second area A2. The radio frequency front-end module 1 further includes a second conductive pattern 32 located in the second area A2. The first conductive pattern 22 and the second conductive pattern 32 are arranged on opposite sides of the second portion 12. For example, the first conductive pattern 22 can be located on the same side of the carrier layer 10 as the center conductor pattern 21, and the second conductive pattern 32 can be located on the same side of the carrier layer 10 as the back metal pattern 31. The embodiments of the present application do not make specific limitations on the specific patterns of the first conductive pattern 22 and the second conductive pattern 32, and they can be reasonably arranged in combination with the connection relationship of the devices in the transmit chain and the receive chain of the radio frequency front-end module.

[0116] For example, the first conductive pattern 22 is used to realize the connection between the radio frequency chip 40 and the circulator 50, and the coupling of the radio frequency front-end assembly 1 with other components of the communication device. The second conductive pattern 32 is used to realize the grounding of the devices in the radio frequency front-end assembly 1. The first conductive pattern 22 can include traces, pads, capacitors, resistors, inductors, etc., and the embodiments of the present application do not make specific limitations on the first conductive pattern 22.

[0117] The first conductive pattern 22 and the second conductive pattern 32 are coupled, for example, the first conductive pattern 22 and the second conductive pattern 32 are coupled through the conductive hole 13. In the case where the second conductive pattern 32 is a ground pattern, the positions in the first conductive pattern 22 that need to be coupled with the ground are coupled with the second conductive pattern 32 through the conductive hole 13, and it is not limited that all the first conductive patterns 22 need to be coupled with the second conductive pattern 32.

[0118] In some embodiments, the conductive hole 13 is also provided in the first part 11, and the center conductor pattern 21 is coupled with the back metal pattern 31 through the conductive hole 13.

[0119] FIG. 8A is a component diagram of a radio frequency front-end assembly provided by an embodiment of the present application, and FIG. 8B is a sectional view of a radio frequency front-end assembly provided by an embodiment of the present application.

[0120] In some embodiments, as shown in FIG. 8A, a passive device 60 is also integrated in the radio frequency front-end assembly 1, and the passive device 60 is located in the second area A2. The passive device 60, for example, includes one or more of resistors, capacitors, and inductors. The passive device 60, for example, can be used to constitute structures such as filters, couplers, input matching networks, and output matching networks in the radio frequency front-end assembly.

[0121] For example, as shown in FIG. 8B, the passive device 60 is located in the carrier layer 10. Of course, the passive device 60 can also be located outside the carrier layer 10, for example, the passive device 60 is arranged on one side of the carrier layer 10 along the thickness direction of the carrier layer 10, and the embodiments of the present application do not make limitations thereon.

[0122] By integrating the passive device in the radio frequency front-end assembly 1, it is not necessary to separately arrange discrete resistors, capacitors, and inductors, so as to further improve the integration of the radio frequency front-end assembly.

[0123] In some embodiments, the material of the second part 12 of the second area A2 where the carrier layer 10 is located includes a microwave ferrite.

[0124] When the devices in the radio frequency front-end assembly 1 are interconnected, the microwave ferrite is used as the dielectric material. When the discrete devices are interconnected on the circuit board, the polypropylene is used as the dielectric material. The dielectric constant of the microwave ferrite is lower than the dielectric constant of the polypropylene, and the loss tangent of the microwave ferrite is lower than the loss tangent of the polypropylene. Therefore, the loss of the gapless device formed on the microwave ferrite is low, and the loss of the transmit chain and the receive chain formed by the radio frequency front-end assembly 1 can be reduced.

[0125] FIGS. 9A and 9B are sectional views of a radio frequency front-end assembly provided in an embodiment of the present application.

[0126] In a third implementation, as shown in FIG. 9A, the carrier layer 10 further includes a plurality of trace layers 14, which are arranged in the thickness direction of the carrier layer 10 and are spaced apart from each other. The adjacent trace layers 14 can be coupled by, for example, conductive vias. The passive device 60 is integrated in the plurality of trace layers 14. The radio frequency front-end assembly 1 further includes a first conductive pattern 22 and a second conductive pattern 32, which are coupled by the plurality of trace layers 14.

[0127] In some embodiments, as shown in FIG. 9A, the carrier layer 10 includes a plurality of microwave ferrite layers 15 in the first area A1 and the second area A2, and the microwave ferrite layers 15 are arranged between the adjacent trace layers 14. For example, the microwave ferrite layers 15 and the trace layers 14 can be manufactured by a low temperature co-fired ceramic (LTCC) process.

[0128] The microwave ferrite layers 15 extend to the first area A1 and the second area A2, or in other words, the material of the first portion 11 in the carrier layer 10 includes the microwave ferrite, and the material of the second portion 12 in the carrier layer 10 also includes the microwave ferrite. The microwave ferrite layers 15 and the trace layers 14 are arranged alternately, and the adjacent trace layers 14 are coupled by the conductive vias penetrating the microwave ferrite layers 15.

[0129] Optionally, the plurality of trace layers 14 are arranged in the second area A2 and are not distributed in the first area A1, so as to reduce the interference between the trace layers 14 and the circulator 50.

[0130] Alternatively, as shown in FIG. 9B, the carrier layer 10 includes a plurality of microwave ferrite layers 15 in the second area A2 and a single microwave ferrite layer 15 in the first area A1, and the thickness of the single microwave ferrite layer 15 in the first area A1 is equal to the thickness of the plurality of microwave ferrite layers 15 in the second area A2.

[0131] By designing the pattern of the wiring layer 14, the passive device 60 such as capacitor, inductor, resistor, etc. can be integrated in the multi-layer wiring layer 14, so that the radio frequency front-end component 1 can integrate the passive device 60 in addition to the radio frequency chip 40.

[0132] FIGS. 10A-10C are cross-sectional views of a radio frequency front-end component according to an embodiment of the present application.

[0133] In some embodiments, as shown in FIG. 10A, the carrier layer 10 includes one microwave ferrite layer 15 and at least one non-microwave ferrite layer 16, and the microwave ferrite layer 15 and the at least one non-microwave ferrite layer 16 are stacked. The microwave ferrite layer 15 extends to the first area A1 and the second area A2, and each non-microwave ferrite layer 16 also extends to the first area A1 and the second area A2. In FIG. 10A, the carrier layer 10 is taken as an example including multiple non-microwave ferrite layers 16.

[0134] The microwave ferrite layer 15 can be located between the multiple non-microwave ferrite layers 16 and the center conductor pattern 21, or the microwave ferrite layer 15 can be located between the multiple non-microwave ferrite layers 16 and the back metal pattern 31. For example, the microwave ferrite layer 15 can be located between the multiple non-microwave ferrite layers 16 and the back metal pattern 31, and the microwave ferrite layer 15 is provided with a conductive hole 13 penetrating through the microwave ferrite layer 15 to realize the coupling between the multi-layer wiring layer 14 and the second conductive pattern 32.

[0135] The non-microwave ferrite layer 16 is provided between adjacent wiring layers 14, for example, the microwave ferrite layer 15 and the wiring layer 14 are alternately arranged, and adjacent wiring layers 14 are coupled through a conductive via hole penetrating through the non-microwave ferrite layer 16. By designing the pattern of the wiring layer 14, the passive device 60 such as capacitor, inductor, resistor, etc. can be integrated in the multi-layer wiring layer 14, so that the radio frequency front-end component 1 can integrate the passive device 60 in addition to the radio frequency chip 40.

[0136] The carrier layer 10 is formed by a set of materials with different characteristics, on the one hand, the microwave ferrite layer 15 is used to ensure the normal performance of the circulator 50, and on the other hand, the non-microwave ferrite layer 16 is used to improve the performance of the wiring layer 14.

[0137] In some embodiments, the dielectric constant of the material of the non-microwave ferrite layer 16 is greater than the dielectric constant of the microwave ferrite. For example, the material of the non-microwave ferrite layer 16 includes high dielectric constant ceramic, etc.

[0138] By setting the non-microwave ferrite layer 16 with high dielectric constant and low loss in the carrier layer 10, and setting the wiring layer 14 in the non-microwave ferrite layer 16. In this way, when integrating the passive device 60 such as capacitor in the wiring layer 14, a larger capacitance can be obtained with smaller size, which is conducive to the miniaturization design of the radio frequency front-end assembly 1.

[0139] In other embodiments, the magnetic permeability of the material of the non-microwave ferrite layer 16 is greater than that of the microwave ferrite. For example, the material of the non-microwave ferrite layer 16 includes high magnetic permeability ceramic and the like.

[0140] By setting the non-microwave ferrite layer 16 with high magnetic permeability in the carrier layer 10, and setting the wiring layer 14 in the non-microwave ferrite layer 16. In this way, when integrating the passive device 60 such as inductor in the wiring layer 14, a larger inductance can be obtained with smaller size, which is conducive to the miniaturization design of the radio frequency front-end assembly 1.

[0141] Alternatively, as shown in FIG. 10B, the carrier layer 10 includes a plurality of microwave ferrite layers 15 and a plurality of non-microwave ferrite layers 16, and the plurality of microwave ferrite layers 15 and the plurality of non-microwave ferrite layers 16 are stacked. Each microwave ferrite layer 15 extends to the first area A1 and the second area A2, and each non-microwave ferrite layer 16 also extends to the first area A1 and the second area A2.

[0142] The plurality of microwave ferrite layers 15 and the plurality of non-microwave ferrite layers 16 are stacked: the plurality of microwave ferrite layers 15 can be located between the plurality of non-microwave ferrite layers 16 and the center conductor pattern 21, the plurality of microwave ferrite layers 15 can also be located between the plurality of non-microwave ferrite layers 16 and the back metal pattern 31, the microwave ferrite layer 15 and the non-microwave ferrite layer 16 can also be alternately arranged, and the microwave ferrite layer 15 can also be stacked without the non-microwave ferrite layer 16, part of the non-microwave ferrite layer 16 is stacked, and part of the microwave ferrite layer 15 and the non-microwave ferrite layer 16 are alternately arranged.

[0143] Part of the wiring layer 14 in the plurality of wiring layers 14 can be distributed between the plurality of microwave ferrite layers 15, and part of the wiring layer 14 in the plurality of wiring layers 14 can be distributed between the plurality of non-microwave ferrite layers 16. For example, the non-microwave ferrite layer 16 is arranged between part of the adjacent wiring layers 14, and the microwave ferrite layer 15 is arranged between part of the adjacent wiring layers 14.

[0144] By setting the wiring layer 14 on the surface of the microwave ferrite layer 15 and the non-microwave ferrite layer 16 respectively, the advantages of the microwave ferrite layer 15 and the non-microwave ferrite layer 16 can be utilized to maximize the performance of the wiring layer 14 and the passive device 60 integrated in the wiring layer 14.

[0145] Alternatively, as shown in FIG. 10C, the carrier layer 10 includes at least one first microwave ferrite layer 151, a plurality of non-microwave ferrite layers 16, and a plurality of second microwave ferrite layers 152, the plurality of non-microwave ferrite layers 16 and the plurality of second microwave ferrite layers 152 are located in the second area A2 and are stacked.

[0146] FIGS. 11A and 11B are sectional views of a radio frequency front-end assembly according to embodiments of the present application.

[0147] In some other embodiments, as shown in FIG. 11A, the first portion 11 located in the first area A1 includes at least one first microwave ferrite layer 151, and the second portion 12 located in the second area A2 includes at least one non-microwave ferrite layer 16. In FIG. 11A, the second portion 12 includes a plurality of non-microwave ferrite layers 16 as an example.

[0148] For example, the first portion 11 includes one first microwave ferrite layer 151, and the thickness of the first microwave ferrite layer 151 is the same as the thickness of the plurality of non-microwave ferrite layers 16.

[0149] Alternatively, for example, the first portion 11 includes a plurality of first microwave ferrite layers 151, and the thickness of the first microwave ferrite layer 151 and the non-microwave ferrite layer 16 located in the same layer is the same.

[0150] The wiring layer 14 is arranged in the second portion 12, and the non-microwave ferrite layer 16 is arranged between adjacent wiring layers 14.

[0151] Alternatively, as shown in FIG. 11B, the second portion 12 further includes one or more second microwave ferrite layers 152 connected to the plurality of non-microwave ferrite layers 16.

[0152] That is, the second portion 12 not only includes a non-microwave ferrite portion, but also includes a microwave ferrite portion. The connection mode of the second microwave ferrite layer 152 and the non-microwave ferrite layer 16 can be the same as the connection mode of the first microwave ferrite layer 151 and the non-microwave ferrite layer 16, which will not be described herein again.

[0153] As an example, the at least one wiring layer 14 further extends to the surface of the second microwave ferrite layer 152. That is, the wiring is arranged on the surface of the non-microwave ferrite layer 16 and the second microwave ferrite layer 152 to fully exert the respective advantages of the non-microwave ferrite layer 16 and the second microwave ferrite layer 152.

[0154] FIGS. 12A and 12B are sectional views of a radio frequency front-end assembly according to embodiments of the present application.

[0155] The embodiment of the present application further provides a radio frequency front-end component 1, as shown in FIG. 12A, the circulator 50 and the passive device 60 are integrated in the radio frequency front-end component 1, the passive device 60 is arranged in the second area A2, and the circulator 50 is arranged in the first area A1. Other radio frequency chips are integrated in the radio frequency front-end component 1.

[0156] As shown in FIG. 12B, the radio frequency front-end component 1 includes the carrier layer 10, the circulator 50 and the passive device 60. The structure of the carrier layer 10 and the circulator 50 can refer to the related description above. For example, the passive device 60 can be arranged in the carrier layer 10. The implementation manner of arranging the passive device 60 in the carrier layer 10 can refer to the related description above. Of course, the passive device 60 can also be arranged on one side of the carrier layer 10, and the embodiment of the present application does not make any limitation in this aspect.

[0157] The radio frequency front-end component 1 provided by the embodiment of the present application includes the circulator 50, the circulator 50 includes the center conductor pattern 21, the microwave ferrite layer (the part of the carrier layer 10 located in the first area A1) and the back metal pattern 31. On the basis of the structure of the circulator 50, the passive device 60 is integrated in the part of the carrier layer 10 located in the second area A2. The components of the circulator 50 are extended as the carrier of the passive device 60, and one or more passive devices 60 can be integrated in the radio frequency front-end component 1. Compared with the separate arrangement of the devices in the radio frequency front-end module, the integration of at least part of the devices in the radio frequency front-end module on the microwave ferrite layer of the circulator 50 can realize the integration and miniaturization of the radio frequency front-end module, and meet the requirement of the communication equipment on the integration degree of the radio frequency front-end module. In addition, after the integration of the passive device 60 and the circulator 50 on the carrier layer 10, the length of the interconnection wire between the passive device 60 and the circulator 50 is shortened, and the loss of the interconnection wire can be reduced, thereby reducing the loss of the transmission link and the receiving link constituted by the radio frequency front-end component 1.

[0158] The above is only a specific embodiment of the present application, but the protection scope of the present application is not limited to this. Any change or replacement within the technical scope disclosed by the present application should be covered in the protection scope of the present application. Therefore, the protection scope of the present application should be subject to the protection scope of the claims.

Claims

1. A radio frequency front-end assembly, characterized by The radio frequency front-end assembly comprises: a carrier layer, a circulator, and a radio frequency chip; the carrier layer is located in a first region and a second region; the material of the part of the carrier layer located in the first region comprises a microwave ferrite; the circulator is located in the first region; the circulator comprises a center conductor pattern, a back metal pattern, and the part of the carrier layer located in the first region; along the thickness direction of the carrier layer, the center conductor pattern and the back metal pattern are arranged on opposite sides of the carrier layer; the radio frequency chip is arranged on one side of the carrier layer along the thickness direction of the carrier layer and located in the second region.

2. The radio frequency front-end component of claim 1, wherein, The radio frequency chip is a bare chip.

3. The radio frequency front-end component of claim 1 or 2, wherein, The radio frequency chip comprises one or more of a power amplifier chip, a low noise amplifier chip, a filter chip, a duplexer chip, and a radio frequency switch chip.

4. The radio frequency front-end component according to any one of claims 1-3, wherein, The material of the part of the carrier layer located in the second region also comprises a microwave ferrite.

5. The radio frequency front-end component of any of claims 1-4, wherein, The radio frequency front-end assembly further comprises a passive device arranged in the carrier layer and located in the second region.

6. The radio frequency front-end component of claim 5, wherein, The carrier layer further comprises a plurality of wiring layers; The plurality of wiring layers are arranged in intervals along the thickness direction of the carrier layer; the passive device is integrated in the plurality of wiring layers.

7. The radio frequency front-end component of claim 6, wherein, The carrier layer comprises a plurality of microwave ferrite layers located in the first region and the second region; the microwave ferrite layers are arranged between adjacent wiring layers.

8. The radio frequency front-end component of claim 6, wherein, The carrier layer comprises a plurality of microwave ferrite layers and a plurality of non-microwave ferrite layers located in the first region and the second region and arranged in a stack; the non-microwave ferrite layers or the microwave ferrite layers are arranged between adjacent wiring layers.

9. The radio frequency front-end component of claim 6, wherein, The carrier layer comprises a first part and a second part; the first part is located in the first region, and the second part is located in the second region; The first part comprises at least one first microwave ferrite layer; the second part comprises a plurality of non-microwave ferrite layers; the non-microwave ferrite layers are arranged between adjacent wiring layers.

10. The radio frequency front-end component of claim 9, wherein, The second part further comprises a plurality of second microwave ferrite layers corresponding to the plurality of non-microwave ferrite layers; at least one wiring layer extends to the surface of the second microwave ferrite layer.

11. The radio frequency front-end assembly according to any one of claims 7-10, wherein: the dielectric constant of the material of the non-microwave ferrite layer is greater than the dielectric constant of the microwave ferrite; or the magnetic permeability of the material of the non-microwave ferrite layer is greater than the magnetic permeability of the microwave ferrite. The radio frequency front-end assembly further comprises a first conductive pattern; the first conductive pattern is arranged on one side of the carrier layer and located in the second region; the radio frequency chip is arranged on the side of the first conductive pattern away from the carrier layer; the radio frequency chip is coupled to the first conductive pattern.

12. The radio frequency front-end component of any one of claims 1-11, wherein, The radio frequency front-end assembly further comprises a second conductive pattern; the second conductive pattern is arranged on the side of the carrier layer away from the first conductive pattern and located in the second region; the first conductive pattern is coupled to the second conductive pattern.

13. The radio frequency front-end component of claim 12, wherein, ​ 14. The radio frequency front-end component of any one of claims 1-5, wherein, The radio frequency front-end assembly further comprises a first conductive pattern and a second conductive pattern, the first conductive pattern and the second conductive pattern are located in the second region and are disposed on opposite sides of the carrier layer along a thickness direction of the carrier layer; The carrier layer comprises a conductive hole and a microwave ferrite layer located in the first region and the second region, the conductive hole penetrates the microwave ferrite layer, and the first conductive pattern and the second conductive pattern are coupled through the conductive hole.

15. A radio frequency front end assembly, comprising: Comprise: A carrier layer, a circulator, and a passive device; The carrier layer is located in a first region and a second region; the material of the part of the carrier layer located in the first region comprises a microwave ferrite; The circulator is located in the first region, and the circulator comprises a center conductor pattern, a back metal pattern, and a part of the carrier layer located in the first region; along the thickness direction of the carrier layer, the center conductor pattern and the back metal pattern are disposed on opposite sides of the carrier layer; The passive device is disposed in the carrier layer and located in the second region.

16. The radio frequency front-end component of claim 15, wherein, The radio frequency front-end assembly further comprises a radio frequency chip; along the thickness direction of the carrier layer, the radio frequency chip is disposed on one side of the carrier layer and located in the second region.

17. A radio frequency transceiver system, characterized by Comprise an antenna and a radio frequency front-end assembly, the antenna and the radio frequency front-end assembly are coupled; the radio frequency front-end assembly comprises the radio frequency front-end assembly of any one of claims 1-16.

18. A communication device, characterized by Comprise a power supply and a radio frequency transceiver system, the power supply is used to supply power to the radio frequency transceiver system; the radio frequency transceiver system comprises the radio frequency transceiver system of claim 17.

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