Semiconductor laser element

Abstract

Embodiments of the present description provide a semiconductor laser element. The semiconductor laser element sequentially comprises a substrate, a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer, an electron blocking layer, and an upper limiting layer from bottom to top; the active layer satisfies at least one of the following: the ratio of the content of Al element to the content of H element satisfies a first preset proportional distribution, the ratio of the content of In element to the content of the H element satisfies a second preset proportional distribution, the ratio of the content of Si element to the content of the H element satisfies a third preset proportional distribution, the ratio of the content of Mg element to the content of the H element satisfies a fourth preset proportional distribution, and the ratio of the content of C element to the content of O element satisfies a fifth preset proportional distribution.

Description

A semiconductor laser element TECHNICAL FIELD

[0001] The present specification relates to the technical field of semiconductor optoelectronic devices, and in particular to a semiconductor laser element. BACKGROUND

[0002] Lasers are widely used in laser display, laser television, laser projector, communication, medical treatment, weapon, guidance, distance measurement, spectrum analysis, cutting, precision welding, high-density optical storage and other fields. The types of lasers can include solid, gas, liquid, semiconductor and dye lasers. Compared with other types of lasers, all-solid-state semiconductor ultraviolet lasers have the advantages of small size, high efficiency, light weight, good stability, long service life, simple and compact structure, and miniaturization.

[0003] At the same time, there are great differences between lasers and nitride semiconductor light-emitting diodes:

[0004] 1) The laser generated by the laser is generated by the stimulated emission of carriers, and the spectral half-width is small, the brightness is very high, and the output power of a single laser can be in the W level, while the nitride semiconductor light-emitting diode is spontaneously radiated, and the output power of a single light-emitting diode is in the mW level;

[0005] 2) The current density of the laser reaches KA / cm2, which is more than 2 orders of magnitude higher than that of the nitride light-emitting diode, thereby causing stronger electron leakage, more serious Auger recombination, stronger polarization effect, more serious electron-hole mismatch, and more serious efficiency decay Droop effect;

[0006] 3) The light-emitting diode spontaneously transitions and radiates, and the incoherent light jumps from a high energy level to a low energy level without external action, while the laser is stimulated transition radiation, and the energy of the induced photon should be equal to the energy level difference of the electron transition. The generated photon and the induced photon are homophase coherent light;

[0007] 4) Different principles: the light-emitting diode is under the action of an external voltage, and the electron-hole transitions to the active layer or p-n junction produce radiative recombination and light emission, while the laser needs to meet the lasing conditions to lase. Specifically, the carrier inversion distribution in the active region must be met, the stimulated radiation light oscillates back and forth in the resonant cavity, the propagation in the gain medium amplifies the light, the threshold condition is met so that the gain is greater than the loss, and finally the laser is output.

[0008] At present, the electrode injection near the output end face of the upper surface of the ridge waveguide of the nitride semiconductor ultraviolet laser (such as a gallium nitride laser) will generate heat at the exit end and generate stray light and leakage light, which will interfere with the far field FFP image.

[0009] Therefore, it is desirable to provide a semiconductor laser element capable of reducing heat generation at an exit end and reducing stray light and leakage light, and improving far-field FFP image quality.

[0010] SUMMARY

[0011] One or more embodiments of the present specification provide a semiconductor laser element. The semiconductor laser element sequentially comprises, from bottom to top, a substrate, a lower confinement layer, a lower waveguide layer, an active layer, an upper waveguide layer, an electron blocking layer, and an upper confinement layer. The active layer satisfies at least one of a first preset proportion distribution of a ratio of a content of Al element to a content of H element, a second preset proportion distribution of a ratio of a content of In element to a content of H element, a third preset proportion distribution of a ratio of a content of Si element to a content of H element, a fourth preset proportion distribution of a ratio of a content of Mg element to a content of H element, and a fifth preset proportion distribution of a ratio of a content of C element to a content of O element. BRIEF DESCRIPTION OF DRAWINGS

[0012] The present specification will be further described in the manner of exemplary embodiments, which will be described in detail with reference to the accompanying drawings. These embodiments are not limiting, and in these embodiments, the same numbers represent the same structures, in which:

[0013] FIG. 1 is a structural schematic diagram of a semiconductor laser element according to some embodiments of the present specification;

[0014] FIG. 2 is a SIMS secondary ion mass spectrum diagram of a semiconductor laser element according to some embodiments of the present specification;

[0015] FIG. 3 is another SIMS secondary ion mass spectrum diagram of a semiconductor laser element according to some embodiments of the present specification;

[0016] FIG. 4 is a partial enlarged view of a TEM lens electron microscope diagram of a semiconductor laser element obtained when a transmission electron microscope size is 200 nm according to some embodiments of the present specification;

[0017] FIG. 5 is a partial enlarged view of another TEM lens electron microscope diagram of a semiconductor laser element obtained when a transmission electron microscope size is 500 nm according to some embodiments of the present specification;

[0018] FIG. 6 is a partial enlarged view of another TEM lens electron microscope diagram of a semiconductor laser element obtained when a transmission electron microscope size is 20 nm according to some embodiments of the present specification;

[0019] FIG. 7 is a partial enlarged view of another TEM lens electron microscope diagram of a semiconductor laser element obtained when a transmission electron microscope size is 100 nm according to some embodiments of the present specification;

[0020] Fig. 8 is a partial enlarged view of another TEM lens electron microscope image of the semiconductor laser element obtained when the transmission electron microscope size is 200 nm, according to some embodiments of the present specification.

[0021] Fig. 9 is another SIMS secondary ion mass spectrum image of the semiconductor laser element, according to some embodiments of the present specification.

[0022] Fig. 10 is another SIMS secondary ion mass spectrum image of the semiconductor laser element, according to some embodiments of the present specification.

[0023] Reference numerals: 100: substrate; 101: lower confinement layer; 102: lower waveguide layer; 103: active layer; 104: upper waveguide layer; 105: electron blocking layer; 106: upper confinement layer; 107: current spreading layer. DETAILED DESCRIPTION

[0024] In order to more clearly illustrate the technical solutions of the embodiments of the present specification, the following will briefly introduce the drawings needed to be used in the embodiment description. Obviously, the drawings in the following description are only some examples or embodiments of the present specification, and for those skilled in the art, the present specification can also be applied to other similar scenarios without creative labor on the basis of these drawings. Unless it is clear from the language environment or otherwise stated, the same reference numerals in the drawings represent the same structure or operation.

[0025] It should be understood that the "system", "device", "unit" and / or "module" used herein is a method for distinguishing different components, elements, parts, portions or assemblies at different levels. However, if other words can achieve the same purpose, the words can be replaced by other expressions.

[0026] As shown in the specification and claims, unless the context clearly indicates otherwise, "a", "one", "kind" and / or "the" do not refer to the singular, but also include the plural. Generally speaking, the terms "include" and "contain" only indicate the inclusion of the elements explicitly identified, and these elements do not constitute an exclusive list, and the device can also contain other elements.

[0027] Fig. 1 is a structural schematic diagram of a semiconductor laser element, according to some embodiments of the present specification.

[0028] Fig. 7 shows the upper confinement layer 106 in the partial enlarged view of another TEM lens electron microscope image of the semiconductor laser element obtained when the transmission electron microscope size is 100 nm.

[0029] Fig. 8 shows a partial enlarged view of another TEM lens electron microscope image of the semiconductor laser element obtained when the TEM lens size is 200 nm.

[0030] In some embodiments, the semiconductor laser element comprises, in order from bottom to top, a substrate 100, a lower confinement layer 101, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, an electron blocking layer 105, and an upper confinement layer 106. The active layer 103 satisfies at least one of the following conditions: the ratio of the content of Al element to the content of H element satisfies a first preset proportion distribution, the ratio of the content of In element to the content of H element satisfies a second preset proportion distribution, the ratio of the content of Si element to the content of H element satisfies a third preset proportion distribution, the ratio of the content of Mg element to the content of H element satisfies a fourth preset proportion distribution, and the ratio of the content of C element to the content of O element satisfies a fifth preset proportion distribution.

[0031] The substrate 100 refers to a material base used for manufacturing the semiconductor laser element. For example, the substrate can be a wafer made of a semiconductor single crystal material.

[0032] In some embodiments, the substrate can include any one of a sapphire composite substrate, a silicon composite substrate, a Ge composite substrate, a SiC composite substrate, an AlN composite substrate, a GaN composite substrate, a GaAs composite substrate, an InP composite substrate, an InAs composite substrate, a GaSb composite substrate, a sapphire / SiO2 composite substrate, a Mo composite substrate, a TiW composite substrate, a CuW composite substrate, a Cu composite substrate, a sapphire / AlN composite substrate, a diamond composite substrate, a graphene composite substrate, a sapphire / SiNx composite substrate, a sapphire / SiO2 / SiNx composite substrate, a sapphire / SiNx / SiO2 composite substrate, a magnesium aluminum spinel composite substrate, a MgAl2O4 composite substrate, a MgO composite substrate, a ZnO composite substrate, a ZrB2, a LiAlO2 composite substrate, and a LiGaO2 composite substrate.

[0033] Fig. 4 shows a partial enlarged view of a TEM lens electron microscope image of the semiconductor laser element obtained when the TEM lens size is 200 nm, according to some embodiments of the present specification.

[0034] The lower confinement layer 101 can be used to regulate the carrier distribution and stress distribution of the active layer 103, and to reduce the heat accumulation of the active layer 103. For example, as shown in Fig. 4, the lower confinement layer 101, 1420A and 2588A in the figure respectively represent the thickness of the lower confinement layer 101 corresponding to the rectangular frame. A represents the unit of the size of the thickness in angstroms. The thickness is the actual measured thickness. Each rectangular frame corresponds to a shaded area.

[0035] FIG. 5 is a partial enlarged view of another TEM lens electron microscope image of a semiconductor laser element obtained when the transmission electron microscope size is 500 nm, according to some embodiments of the present description.

[0036] The lower waveguide layer 102 can serve as a light transmission channel on the semiconductor laser element. For example, the thickness of the lower waveguide layer 102 in FIG. 5 is represented by the rectangular boxes 6789A, 3125A, and 2486A, respectively, on the lower confinement layer 101. The thickness is the actual measured thickness. Each rectangular box corresponds to a shaded area.

[0037] The active layer 103 refers to a thin layer for generating photons and amplifying light.

[0038] In some embodiments, the active layer can be composed of at least one material selected from the group consisting of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond.

[0039] In some embodiments, the thickness of the active layer can be 10 angstroms to 100 angstroms. For example, the thickness of the active layer can be 10 angstroms. For another example, the thickness of the active layer can be 55 angstroms. For yet another example, the thickness of the active layer can be 100 angstroms.

[0040] FIG. 6 is a partial enlarged view of another TEM lens electron microscope image of a semiconductor laser element obtained when the transmission electron microscope size is 20 nm, according to some embodiments of the present description.

[0041] 98A, 22A, 45A, 42A, and 26A in FIG. 6 have similar meanings as 1420A in FIG. 4.

[0042] In some embodiments, as shown in FIG. 6, the active layer 103 can include multiple groups of periodic structures, each group of periodic structures including a well layer and a barrier layer. The multiple groups can be 1 to 3 groups. For example, the multiple groups are 1 group. For another example, the multiple groups are 2 groups. For yet another example, the multiple groups are 3 groups.

[0043] The well layer refers to a region in the semiconductor laser element in which the electron energy is higher than the valence band but lower than the conduction band.

[0044] The barrier layer refers to a blocking layer formed by the diffusion of electrons and holes in the PN junction of the semiconductor laser element.

[0045] In some embodiments, the barrier layer of the active layer can be composed of at least one of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond.

[0046] In some embodiments, the thickness of the barrier layer of the active layer can be 10 angstroms to 200 angstroms. For example, the thickness of the barrier layer of the active layer can be 10 angstroms. For another example, the thickness of the barrier layer of the active layer can be 105 angstroms. For yet another example, the thickness of the barrier layer of the active layer can be 200 angstroms.

[0047] The upper waveguide layer 104 can be used to suppress optical absorption loss.

[0048] FIG. 7 is a partial enlarged view of another TEM lens electron microscope image of a semiconductor laser element obtained when the transmission electron microscope size is 100 nm, according to some embodiments of the present application. 2328A in FIG. 7 has a similar meaning to 1420A in FIG. 4.

[0049] FIG. 8 is a partial enlarged view of another TEM lens electron microscope image of a semiconductor laser element obtained when the transmission electron microscope size is 200 nm, according to some embodiments of the present application. 3156A and 1783A in FIG. 8 have a similar meaning to 1420A in FIG. 4.

[0050] The electron blocking layer 105 can be used to confine electrons within the light emitting region of the upper waveguide layer 104. The electron blocking layer can prevent electrons from overflowing within the upper waveguide layer 104 in the case of large current injection, causing a decrease in light emitting efficiency and light emitting quality. For example, the electron blocking layer 105 shown in FIG. 7. For another example, the electron blocking layer 105 shown in FIG. 8.

[0051] The upper confinement layer 106 can be used to confine the injection of electrons and holes and the propagation of light in the semiconductor laser element. For example, the upper confinement layer 106 shown in FIG. 7. For another example, the upper confinement layer 106 shown in FIG. 8.

[0052] In some embodiments, the lower confinement layer 101, the lower waveguide layer 102, the electron blocking layer 105, and the upper confinement layer 106 can be composed of at least one material selected from the group consisting of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond, respectively.

[0053] The first preset ratio distribution refers to a preset ratio distribution satisfied by a ratio of contents of Al element and H element in the active layer.

[0054] The second preset ratio distribution refers to a preset ratio distribution satisfied by a ratio of contents of In element and H element in the active layer.

[0055] The third preset ratio distribution refers to a preset ratio distribution satisfied by a ratio of contents of Si element and H element in the active layer.

[0056] The fourth preset ratio distribution refers to a preset ratio distribution satisfied by a ratio of contents of Mg element and H element in the active layer.

[0057] In some embodiments, the first preset ratio distribution, the second preset ratio distribution, the third preset ratio distribution, and the fourth preset ratio distribution can correspond to multiple distribution forms.

[0058] For example, the second preset ratio distribution can correspond to a curve distribution form of any sinusoidal function, the third preset ratio distribution can correspond to a curve distribution of any quadratic function, and the first preset ratio distribution and the fourth preset ratio distribution can correspond to a curve distribution of any linear function, respectively.

[0059] There is heat loss in the process of generating laser in a semiconductor laser element. Specifically, in the process of generating laser in a semiconductor laser element, the Stokes shift loss formed by the photon energy difference between the pump light and the oscillation light is converted into heat, and the energy loss caused by the coupling rate of the pump level to the upper laser level not being 1 is also converted into heat, both of which together generate a large amount of waste heat, making the temperature distribution of the semiconductor laser element uneven, causing thermal expansion and thermal stress distribution to be uneven, resulting in temperature quenching, leading to the fracture of the semiconductor laser element, thermal lens effect, and stress birefringence effect.

[0060] The thermal lens effect can produce a lens-like phenomenon in space. The stress birefringence effect can change the polarization state of the incident light, causing the laser beam generated by the semiconductor laser element to depolarize and distort.

[0061] The optical speed quality factor and temperature quenching ratio of the conventional blue laser and the blue laser of the present disclosure are measured and obtained as shown in Table 1 below, taking the semiconductor laser element as a blue laser as an example.

[0062] The beam quality factor can be used to characterize the degree of defects of the actual laser beam. The optical speed quality factor is a commonly used parameter for measuring the quality of the laser beam. The beam quality factor is a dimensionless parameter.

[0063] The optical speed quality factor can be calculated using the following first formula: M 2 represents the beam quality factor, R is the waist radius of the actual laser beam, R0 is the waist radius of the fundamental mode Gaussian beam, θ is the far-field divergence angle of the actual laser beam, and θ0 is the far-field divergence angle of the fundamental mode Gaussian beam. When the optical speed quality factor is closer to 1, the better the quality of the laser beam.

[0064] Temperature quenching refers to the phenomenon that the light intensity of a semiconductor laser element decreases and the emission spectrum red shifts as the temperature rises. Red shift can cause the frequency of the oscillation light of the semiconductor laser element to decrease, affecting the quality of the laser beam generated by the semiconductor laser element.

[0065] The temperature quenching ratio refers to the proportion of the electrons in the atoms or molecules that cause temperature quenching in the oscillation light to the total electrons in the atoms or molecules in the oscillation light. The temperature quenching ratio can reflect the quality of the laser beam generated by the semiconductor laser element. For example, the higher the temperature quenching ratio, the worse the quality of the laser beam generated by the semiconductor laser element.

[0066] From Table 1, it can be seen that the beam quality factor of the blue laser of the present disclosure is improved from 3.9 to 2.1 compared with the conventional blue laser, an increase of 86%; the temperature quenching ratio of the blue laser of the present disclosure is reduced from 109 PPM to 13 PPM, a decrease of 88%.

[0067] According to the experimental results, by setting the ratios of the contents of Al element and H element, In element and H element, Si element and H element, Mg element and H element, and C element and O element in the active layer of the semiconductor laser element to meet the specific preset ratio distribution, the segregation of the chemical composition (e.g., In element) in the active layer can be controlled, the non-radiative recombination and defects can be inhibited, the Stokes shift heat loss caused by the energy difference between the pump light and the oscillation light in the process of generating laser light of the semiconductor laser element can be reduced, the waste heat generation rate of the semiconductor laser element can be reduced, the thermal expansion and thermal mismatch stress of the semiconductor laser element can be reduced, the temperature quenching of the semiconductor laser element and the thermal mismatch fracture problem of the semiconductor laser element can be inhibited.

[0068] At the same time, the thermal lens effect and the stress birefringence effect of the semiconductor laser element can be inhibited, the temperature quenching ratio can be reduced, the depolarization and distortion of the laser beam of the semiconductor laser element can be reduced, and the beam quality factor can be improved.

[0069] FIG. 2 is a SIMS secondary ion mass spectrum of a semiconductor laser element according to some embodiments of the present specification.

[0070] The horizontal axis in FIGS. 2 and 3 represents the depth of each element in the semiconductor laser element, in units of μm. The left vertical axis in FIGS. 2 and 3 represents the corresponding concentration of each element in each layer of the semiconductor laser element, in units of atoms / cm3. The right vertical axis in FIGS. 2 and 3 represents the corresponding ion intensity of each element in each layer of the semiconductor laser element, in units of a.u.

[0071] In some embodiments, as shown in FIGS. 2-3, the second preset ratio distribution can correspond to the curve distribution of the first function. The first function can be y=xsinx, x>0.

[0072] In some embodiments, the third preset ratio distribution can correspond to the curve distribution of the second function. The second function can be y=px 2 +qx+r, where p<0, and r and q are arbitrary values.

[0073] In some embodiments, the fourth preset ratio distribution, the first preset ratio distribution, and the fifth preset ratio distribution can correspond to the curve distribution of the third function, respectively. The third function can be a linear function.

[0074] In some embodiments of the present disclosure, by satisfying the specific optimal curve distribution of the content ratio of In element to H element, the content ratio of Si element to H element, the content ratio of Mg element to H element, the content ratio of Al element to H element, and the content ratio of C element to O element, the Stokes shift heat loss caused by the energy difference between the pump light and the oscillation light during the generation of laser light of the semiconductor laser element can be further reduced, the waste heat generation rate, thermal expansion and thermal mismatch stress of the semiconductor laser element can be reduced, and the temperature quenching ratio and thermal mismatch fracture problem of the semiconductor laser element can be inhibited. At the same time, the thermal lens effect and stress birefringence effect of the semiconductor laser element can be further inhibited, the temperature quenching ratio, and the depolarization and distortion of the laser beam can be reduced, and the beam quality factor can be improved.

[0075] In some embodiments, the downward angle of the second preset ratio distribution peak position downwardly limiting the layer direction can be a1.

[0076] The downward angle refers to taking the starting position of the curve distribution as the starting point, taking the peak position as the terminal point, drawing a tangent along the change direction of the curve corresponding to the starting position and the peak position, and the included angle between the tangent and the horizontal line.

[0077] In some embodiments, the downward angle a1 can be the included angle between the tangent and the horizontal line, taking the starting position (such as the starting position (0, 0)) of the curve distribution corresponding to the second preset ratio distribution as the starting point, and taking the peak position as the terminal point, along the change direction of the curve corresponding to the starting position and the peak position.

[0078] In some embodiments, the upward angle of the valley position of the second preset ratio distribution upwardly limiting the layer direction can be b1.

[0079] The upward angle refers to taking the starting position of the preset ratio distribution corresponding curve as the starting point, taking the valley position as the terminal point, drawing a tangent along the change direction of the curve corresponding to the starting position and the valley position, and the included angle between the tangent and the horizontal line.

[0080] In some embodiments, the upward angle b1 can be the included angle between the tangent and the horizontal line, taking the starting position (such as the starting position (0, 0)) of the curve corresponding to the second preset ratio distribution as the starting point, and taking the valley position as the terminal point, along the change direction of the curve corresponding to the starting position and the valley position.

[0081] In some embodiments, the downward angle of the peak position of the sixth preset ratio distribution of the content ratio of In element to H element of the upper waveguide layer upwardly limiting the layer direction can be g1.

[0082] In some embodiments, the ratio of the content of In element to H element of the lower waveguide layer satisfies the seventh preset ratio distribution, and the downward angle of the downward limiting layer in the downward direction can be δ.

[0083] In some embodiments, the downward angle of the third preset ratio distribution in the downward direction of the downward limiting layer can be θ1. Wherein: 10°≤γ1≤θ1≤β1≤α1≤δ≤90°. For example, γ1=10°, θ1=20°, β1=45°, α1=80°, δ=90°.

[0084] The downward angle γ1, the downward angle δ, and the downward angle θ1 have similar meanings as the downward angle α1.

[0085] The peak position refers to the coordinate position corresponding to the highest point on the curve.

[0086] The valley position refers to the coordinate position corresponding to the lowest point on the curve.

[0087] The sixth preset ratio distribution refers to the preset ratio distribution satisfied by the ratio of the content of In element to H element of the upper waveguide layer.

[0088] The seventh preset ratio distribution refers to the preset ratio distribution satisfied by the ratio of the content of In element to H element of the lower waveguide layer.

[0089] The sixth preset ratio distribution and the seventh preset ratio distribution can be preset by those skilled in the art according to actual needs. For example, the sixth preset ratio distribution and the seventh preset ratio distribution can correspond to the curve distribution of the first function respectively. The first function can be y=xsinx, x≥0.

[0090] In some embodiments of the present disclosure, the peak position of the preset ratio distribution of the In element content / H element content of the active layer, the peak position of the preset ratio distribution of the Si element content / H element content of the active layer, and the peak position of the preset ratio distribution of the In element content / H element content of the lower waveguide layer are sequentially set as α1, γ1, δ, and θ1 by limiting the respective downward angles in the layer direction, and the peak position of the preset ratio distribution of the In element content / H element content of the upper waveguide layer is set as β1 by limiting the downward angle in the layer direction. Wherein: 10°≤γ1≤θ1≤β1≤α1≤δ≤90, the Stokes shift heat loss caused by the energy difference between the pump light and the oscillation light during the process of generating laser of the semiconductor laser element can be further reduced, the waste heat generation rate of the semiconductor laser element can be reduced, the thermal expansion and thermal mismatch stress of the semiconductor laser element can be reduced, and the temperature quenching ratio and thermal mismatch fracture problem of the semiconductor laser element can be inhibited. At the same time, the thermal lens effect and stress birefringence effect of the semiconductor laser element are further inhibited, the temperature quenching ratio is reduced, the depolarization and distortion of the laser beam of the semiconductor laser element are reduced, and the beam quality factor is improved.

[0091] In some embodiments, the peak of the dielectric constant distribution of the upper waveguide layer 104 can be greater than or equal to the peak of the dielectric constant distribution of the lower waveguide layer 102, and the valley of the dielectric constant distribution of the upper waveguide layer 104 can be less than or equal to the valley of the dielectric constant distribution of the lower waveguide layer 102.

[0092] The dielectric constant distribution refers to the curve distribution corresponding to the value range of the dielectric constant.

[0093] In some embodiments, the peak of the refractive index coefficient distribution of the upper waveguide layer 104 can be greater than or equal to the peak of the refractive index coefficient distribution of the lower waveguide layer 102, and the valley of the refractive index coefficient distribution of the upper waveguide layer 104 can be less than or equal to the valley of the refractive index coefficient distribution of the lower waveguide layer 102.

[0094] The refractive index coefficient distribution refers to the curve distribution corresponding to the value range of the refractive index coefficient.

[0095] In some embodiments of the present disclosure, by setting the difference between the refractive index coefficient distribution and the dielectric constant distribution of the upper waveguide layer and the lower waveguide layer, the light field distribution of the light field in the upper waveguide layer and the lower waveguide layer is adjusted, the degeneracy of the photon is improved, and the light field dissipation is reduced, the mode number and the inter-mode variation of the laser are reduced, the coherence and the far field FFP quality of the laser are improved, and the focusing spot resolution and the beam quality of the laser generated by the semiconductor laser element are improved.

[0096] In some embodiments, the dielectric constant distribution of the upper waveguide layer can correspond to the curve distribution of the fourth function. The fourth function can be y=loga x(a>1).

[0097] The dielectric constant distribution of the lower waveguide layer can correspond to the curve distribution of the fifth function. The fifth function can be y=d x+e.

[0098] The refractive index coefficient distribution of the upper waveguide layer corresponds to the curve distribution of the sixth function, and the sixth function can be y=log b x(b>1).

[0099] The refractive index coefficient distribution of the lower waveguide layer corresponds to the curve distribution of the seventh function. The seventh function can be y=f x+g.

[0100] The ratio of the contents of In elements and O elements of the upper waveguide layer satisfies the sixth preset proportion distribution, which can correspond to the curve distribution of the eighth function. The eighth function can be y=log c x(c>1).

[0101] The ratio of the contents of In elements and O elements of the lower waveguide layer satisfies the seventh preset proportion distribution, which can correspond to the curve distribution of the ninth function. The ninth function can be y=h x+j.

[0102] The coefficients in the fourth function, the sixth function and the eighth function can have the following relationship: 1

[0103] The coefficients in the fifth function, the seventh function and the ninth function can have the following relationship: g

[0104] In some embodiments of the present specification, by setting the curve distribution corresponding to the refractive index coefficient distribution and the dielectric constant distribution of the upper waveguide layer and the lower waveguide layer as the curve distribution of a specific function, the difference between the refractive index coefficient distribution and the dielectric constant distribution of the upper waveguide layer and the lower waveguide layer reaches the best state, the light field distribution of the light field in the upper waveguide layer and the lower waveguide layer is better controlled, the degeneracy of the photons is further improved and the light field dissipation is reduced, the mode number and the inter-mode variation of the laser are further reduced, and the coherence of the laser generated by the semiconductor laser element and the far field FFP quality, focused spot resolution and beam quality are further improved.

[0105] In some embodiments, the eighth preset proportion distribution of the ratio of the contents of In elements and H elements of the lower waveguide layer can correspond to the curve distribution of the third quadrant of the tenth function, and the tenth function is y=sinx / x2.

[0106] The ninth preset proportion distribution of the ratio of the contents of In elements and H elements of the upper waveguide layer can correspond to the curve distribution of the eleventh function, and the eleventh function is y=x1 / 2.

[0107] The ratio of the content of the Si element to the content of the H element of the lower waveguide layer satisfies a tenth preset proportion distribution, which can correspond to a curve distribution of a twelfth function, the twelfth function being y = lnx / e x .

[0108] The ratio of the content of the Al element to the content of the H element of the lower waveguide layer satisfies an eleventh preset proportion distribution, and the ratio of the content of the C element to the content of the O element satisfies a tenth preset proportion distribution, which can correspond to a curve distribution of a thirteenth function, the thirteenth function being a constant function.

[0109] The third quadrant refers to an area below the horizontal axis (for example, the x-axis) and to the left of the vertical axis (for example, the y-axis) in a plane rectangular coordinate system.

[0110] Increasing the thickness of the lower confinement layer of the semiconductor laser element (for example, a nitride semiconductor laser) can reduce the refractive index of the lower confinement layer, but increasing the thickness of the lower confinement layer can also limit the element composition control range in the semiconductor laser element, which is prone to problems such as cracking, bending, and quality degradation. At the same time, the light field is dissipated, and the light field mode leaks to the substrate to form a standing wave, which can result in low substrate mode suppression efficiency and poor far-field pattern (FFP) quality. The mode of the laser light wave generated by the semiconductor laser element can be divided into a transverse mode and a longitudinal mode. The transverse mode light intensity distribution in the cross section perpendicular to the optical axis is determined by the waveguide structure of the semiconductor laser. If the transverse mode is complex and unstable, the coherence of the output light is poor. The longitudinal mode is a standing wave distribution in the propagation direction of the resonant cavity. If many longitudinal modes are simultaneously excited or there is mode variation, high temporal coherence cannot be obtained, which results in poor FFP quality.

[0111] Taking a semiconductor laser element as a green laser as an example, the beam quality factor and the focused spot resolution of the conventional green laser and the blue laser of the present specification are measured and obtained as shown in Table 2 below:

[0112] The focused spot resolution refers to the resolution of the bright spot formed at the edge of the surface of the semiconductor laser element when the semiconductor laser element generates laser light. The size of the focused spot resolution can reflect the quality of the laser beam generated by the semiconductor laser element. For example, the higher the focused spot resolution, the worse the quality of the laser beam generated by the semiconductor laser element.

[0113] As can be seen from Table 2, the beam quality factor of the green laser of the present specification is improved from 1.89 to 0.96 compared with the conventional blue laser, which is increased by 97%; the focused spot resolution of the green laser of the present specification is reduced from more than 200 nm to less than 30, which is changed by -85%, and the decrease is relatively large.

[0114] According to the experimental results, by setting the content ratio of In element to H element, the content ratio of Si element to H element, and the content ratio of Al element to H element in the lower waveguide layer of the semiconductor laser to a specific curve distribution, and setting the content ratio of In element to H element in the upper waveguide layer to a specific ratio distribution, the degeneracy of photons can be improved, the light field dissipation can be reduced, the mode number and the inter-mode variation of the laser can be reduced, the coherence and the far field FFP quality of the laser can be improved, the beam quality factor of the laser can be improved, and the focusing spot resolution of the laser can be reduced.

[0115] FIG. 9 is another SIMS secondary ion mass spectrum of a semiconductor laser element according to some embodiments of the present specification. The horizontal axis of FIG. 9 represents the depth of each element in the semiconductor laser element, in units of μm. The left vertical axis in FIG. 9 represents the corresponding concentration of each element in each layer of the semiconductor laser element, in units of atoms / cm 3 . The right vertical axis in FIG. 9 represents the corresponding ion intensity of each element in each layer of the semiconductor laser element, in units of a.u.

[0116] The internal light absorption loss of a conventional semiconductor laser element (e.g., a nitride semiconductor laser) includes impurity absorption loss, carrier absorption loss, waveguide structure sidewall scattering loss, and quantum well absorption loss. The refractive index dispersion of the semiconductor laser element, the high concentration of carrier concentration fluctuation, affects the refractive index of the active layer, limits the factor to decrease with the increase of wavelength, thereby causing the mode gain of the conventional semiconductor laser element to decrease. After the conventional semiconductor laser element is lased, the carrier concentration of the multi-quantum well active region is saturated, the bipolar conduction effect is weakened, the series resistance is increased, and the voltage of the conventional semiconductor laser element is also increased.

[0117] To solve the above problems existing in the conventional semiconductor laser element, each parameter of the first active layer in the semiconductor laser element can be set as follows.

[0118] In some embodiments, as shown in FIG. 9, the active layer can include a first active layer 103a and a second active layer 103b.

[0119] The first active layer 103a refers to a partial thin layer divided out in the active layer.

[0120] The second active layer 103b refers to another thin layer different from the first active layer divided out in the active layer.

[0121] The Philips ionization degree distribution of the first active layer 103a can be a V-shaped distribution. The Philips ionization degree distribution can correspond to the curve distribution of the fourteenth function. The fourteenth function can be y = x 2 + e x .

[0122] The Philips ionization degree distribution refers to a curve distribution corresponding to a value range of the Philips ionization degree.

[0123] The Philips ionization degree can be used to represent a proportion of particles capable of being ionized in the first active layer in total particles.

[0124] In some embodiments, the conduction band effective state density distribution of the first active layer is in an inverted V-shaped distribution. The conduction band effective state density distribution corresponds to a third quadrant curve distribution of a fifteenth function. The fifteenth function can be y=sinx / x.

[0125] The conduction band effective state density distribution refers to a curve distribution corresponding to a value range of the conduction band effective state density.

[0126] The conduction band effective density is a distribution density of crystal electrons in a unit wave vector space in the conduction band.

[0127] In some embodiments, the breakdown field strength distribution of the first active layer is in a first parabolic distribution, the first parabolic opening is upward, and the breakdown field strength distribution corresponds to a curve distribution of a sixteenth function. The sixteenth function is y=Ax 2 +Bx+C, A>0, B and C are arbitrary numbers.

[0128] The first parabolic line can be a parabolic line with an upward opening formed by a quadratic function.

[0129] The breakdown field strength distribution refers to a curve distribution corresponding to a value range of the breakdown field strength.

[0130] The breakdown field strength refers to a highest electric field strength that the first active layer can withstand under the action of an electric field to avoid being broken down.

[0131] In some embodiments, the thermal conductivity distribution of the first active layer is in a second parabolic distribution, the second parabolic opening is downward. The thermal conductivity distribution corresponds to a curve distribution of a seventeenth function. The seventeenth function is y=Dx 2 +Ex+F, D<0, D and E are arbitrary numbers.

[0132] The second parabolic line can be another parabolic line with a downward opening formed by a quadratic function.

[0133] The thermal conductivity distribution refers to a curve distribution corresponding to a value range of the thermal conductivity.

[0134] In some embodiments, a ratio of contents of In elements and H elements of the first active layer satisfies a thirteenth preset proportion distribution in a third parabolic distribution, the third parabolic opening is upward. The eleventh preset proportion distribution corresponds to a curve distribution of an eighteenth function. The eighteenth function is y=Gx 2 +Hx+I, G>0, H and I are arbitrary numbers.

[0135] The third parabola can be an upward-opening parabola formed by a quadratic function.

[0136] The threshold current density, optical power, voltage, confinement factor and internal optical loss of the conventional blue laser and the blue laser of the present disclosure are measured and obtained as shown in Table 3 below, taking the semiconductor laser element as a blue laser as an example:

[0137] The threshold current density refers to a critical value at which a significant change in electrical characteristics of the semiconductor laser element occurs when the current density reaches a certain value in the semiconductor laser element.

[0138] The optical power refers to the work done by light in a unit of time. The unit of optical power is watt, and the symbol is W.

[0139] The voltage refers to the voltage used by the semiconductor laser element.

[0140] The confinement factor can affect the mode gain of the semiconductor laser element, and thus affect the size of the threshold current of the semiconductor laser element. The confinement factor can be affected by optical confinement and carrier confinement factors. The optical confinement factor can include the effects of diffraction, distortion, reflection, and other factors of light on the semiconductor laser element. Under the same optical loss condition, the worse the confinement factor of the semiconductor laser element, the higher the threshold carrier concentration of the active layer of the semiconductor laser element to produce stimulated radiation, thereby causing electron leakage, and thus reducing the injection efficiency and slope efficiency of the electrons.

[0141] In some embodiments, the worse the confinement factor, the worse the far-field FFP image quality.

[0142] The internal optical loss refers to the attenuation of light intensity due to various physical factors when light propagates within the semiconductor laser element.

[0143] As can be seen from Table 4, the threshold current density of the blue laser of the present disclosure is reduced from 2.4 to 0.63, a reduction of -74% compared to the conventional blue laser; the optical power of the blue laser of the present disclosure is increased from 5.7 to 14.5, an increase of 154% compared to the conventional blue laser; the voltage of the blue laser of the present disclosure is reduced from 6.5 to 3.7, a reduction of -43% compared to the conventional blue laser; the confinement factor of the blue laser of the present disclosure is increased from 1.40% to 3.19%, an increase of 128% compared to the conventional blue laser; the internal optical loss of the blue laser of the present disclosure is reduced from 17.2 to 7.1, a reduction of -59% compared to the conventional blue laser.

[0144] Through the experimental data, it can be known that the curve distribution of the value range of each parameter of the first active layer reduces the carrier absorption loss of the active layer and the sidewall scattering loss of the lower waveguide layer, improves the refractive index dispersion, reduces the internal light absorption loss of the semiconductor laser element, improves the confinement factor of the semiconductor laser element, and improves the optical power of the semiconductor laser element. At the same time, the bipolar conductance and the series resistance of the semiconductor laser element are reduced, and the voltage and the threshold current density of the semiconductor laser element are reduced.

[0145] FIG. 10 is another SIMS secondary ion mass spectrum of a semiconductor laser element according to some embodiments of the present specification. The horizontal axis in FIG. 10 represents the depth of each element in the semiconductor laser element, in units of μm. The left vertical axis in FIG. 10 represents the corresponding concentration of each element in each layer of the semiconductor laser element, in units of atoms / cm 3 . The right vertical axis in FIG. 10 represents the corresponding ion intensity of each element in each layer of the semiconductor laser element, in units of a.u.

[0146] The internal light absorption loss of the conventional semiconductor laser element includes impurity absorption loss, carrier absorption loss, waveguide structure sidewall scattering loss, and quantum well absorption loss, etc. When the light waveguide impurity absorption loss of the conventional semiconductor laser element is high, the intrinsic carbon impurity in the p-type semiconductor will compensate the acceptor and damage the p-type, thereby causing the ionization rate of the p-type doping to be low (e.g., the ionization rate of the p-type doping is lower than 10% or less), a large number of un-ionized Mg (e.g., 90% or more) acceptor impurities are affected, which will cause a self-compensation effect and cause the internal optical loss to rise, resulting in a decrease in the slope efficiency and an increase in the threshold current of the conventional semiconductor laser element, and increasing the unintentionally doped upper waveguide layer to restrict the internal light field in the upper waveguide layer, reducing the overlap of the light field and the p-type AlGaN electron blocking layer above the waveguide layer, and reducing the absorption loss of the un-ionized Mg acceptor to the light field. At the same time, the refractive index dispersion of the conventional semiconductor laser element, the high concentration of carrier concentration fluctuation affects the refractive index of the active layer, the confinement factor decreases with the increase of the wavelength, resulting in a decrease in the mode gain of the conventional semiconductor laser element.

[0147] In order to solve the above-mentioned problems existing in the conventional semiconductor laser element, the semiconductor laser element can be set to include an electron blocking layer in the following form.

[0148] In some embodiments, as shown in FIG. 10, the electron affinity energy distribution of the electron blocking layer 107 is in a V-shaped distribution, the Philips ionization degree distribution is in a V-shaped distribution, the electron mobility distribution is in a V-shaped distribution, and the electron effective mass distribution can be in an inverted V-shaped distribution.

[0149] The electron affinity distribution refers to a curve distribution corresponding to a value range of the electron affinity. The electron affinity refers to an energy released when an atom obtains an electron to form an anion.

[0150] The electron mobility distribution refers to a curve distribution corresponding to a value range of the electron mobility. The electron mobility refers to a rate of directional migration of an electron under the action of a unit external electric field.

[0151] The electron effective mass distribution refers to a curve distribution corresponding to a value range of the electron effective mass. The electron effective mass can be used to characterize the movement speed and behavior of the electron in the energy band and other movement modes.

[0152] In some embodiments, the electron affinity distribution of the electron blocking layer can correspond to a curve distribution of the nineteenth function. The nineteenth function can be y = u |x-m| , u > 1, m > 0.

[0153] In some embodiments, the Phillips ionization degree distribution of the electron blocking layer can correspond to a curve distribution of the twentieth function. The twentieth function can be y = w |x-n| , w > 1, n > 0.

[0154] In some embodiments, the electron mobility distribution of the electron blocking layer can correspond to a curve distribution of the twenty-first function. The twenty-first function can be y = s |x-t|， s > 1, t > 0.

[0155] In some embodiments, the electron effective mass distribution of the electron blocking layer can correspond to a third quadrant curve distribution of the twenty-second function. The twenty-second function can be y = x + k / x, k > 0.

[0156] Taking a semiconductor laser element as a blue laser as an example, the optical power, the limiting factor and the internal optical loss of the conventional blue laser and the blue laser of the present specification are measured and obtained as shown in Table Four:

[0157] As can be seen from Table Four, the optical power of the blue laser of the present specification is increased from 5.9 to 14.7, an increase of 149%; the limiting factor of the blue laser of the present specification is increased from 1.40% to 3.39%, an increase of 142%; the internal optical loss of the blue laser of the present specification is reduced from 17.2 to 3.39%, a decrease of -63% compared with the conventional blue laser.

[0158] According to the experimental results, by designing the electron blocking layer, the light field of the semiconductor laser element can be reduced from the upper confinement layer, the non-ionized acceptor light absorption loss and carrier absorption loss can be suppressed, the refractive index dispersion can be regulated, the confinement factor can be improved, and the mode gain of the semiconductor laser element can be improved.

[0159] In some embodiments, the substrate 100 and the lower confinement layer 101 can have a current spreading layer 107 therebetween.

[0160] The current spreading layer 107 can be a highly doped and highly conductive layer. The current spreading layer 107 can be used to spread the current.

[0161] In some embodiments, the current spreading layer 107 can be composed of at least one of GaN, AlGaN, AlInGaN, AlInN, and AlN.

[0162] In some embodiments, the thickness of the current spreading layer 107 can be 10 angstroms to 5000 angstroms. For example, the thickness of the current spreading layer 107 can be 10 angstroms. For another example, the thickness of the current spreading layer 107 can be 10 angstroms. For another example, the thickness of the current spreading layer 107 can be 2495 angstroms.

[0163] In some embodiments, the Al element content distribution of the current spreading layer 103 corresponds to the third quadrant curve distribution of the twenty-third function y = sinx / x. 2 .

[0164] In some embodiments, the Si doping concentration distribution of the current spreading layer 107 has a quadratic function curve distribution, and the quadratic term coefficient is less than 0.

[0165] In some embodiments, the Si doping concentration distribution of the substrate 100 corresponds to the curve distribution of the twenty-fourth function y = sin|x|.

[0166] In some embodiments, the C element content distribution, the O element content distribution, and the H element content distribution of the current spreading layer 107 correspond to the curve distribution of the twenty-fifth function y = arccotx, respectively.

[0167] In some embodiments, the Al element content distribution of the current spreading layer decreases towards the substrate, and the decreasing angle is a2, 45°≤a2≤90°. For example, a2 = 45°. For another example, a2 = 67.5°. For another example, a2 = 90°. The decreasing angle a2 can be the angle between the tangent line and the horizontal line, where the tangent line is drawn along the changing direction of the curve corresponding to the Al element content distribution of the current spreading layer, with the starting position (e.g., starting position (0, 1)) of the curve as the starting point and the peak position as the end point.

[0168] In some embodiments, the Si doping concentration distribution has a downward trend towards the substrate direction, and the downward angle is β2, 40°≤β2≤85°. For example, β2=40°. For another example, β2=62.5°. For yet another example, β2=85°.

[0169] In some embodiments, the H element content distribution has a downward trend towards the substrate direction, and the downward angle is γ2, 30°≤γ2≤75°. For example, γ2=30°. For another example, γ2=52.5°. For yet another example, γ2=75°.

[0170] In some embodiments, the O element content distribution has a downward trend towards the substrate direction, and the downward angle is θ2, 40°≤θ2≤85°. For example, θ2=40°. For another example, θ2=62.5°. For yet another example, θ2=85°.

[0171] In some embodiments, the C element content distribution has a downward trend towards the substrate direction, and the downward angle is For example, For another example, For yet another example,

[0172] The downward angle β2, the downward angle γ2, the downward angle θ2, and the downward angle The determination method of the downward angle α2 is similar.

[0173] In some embodiments, the variation angles of the Al element content distribution, the Si doping concentration distribution, the C element content distribution, the O element content distribution, and the H element content distribution of the current spreading layer have the following relationships:

[0174] The Al element content distribution refers to the curve distribution corresponding to the value range of the Al element content.

[0175] The C element content distribution, the O element content distribution, and the H element content distribution have similar meanings as the Al element content distribution.

[0176] The Si doping concentration distribution refers to the curve distribution corresponding to the value range of the Si doping concentration. The Si doping concentration refers to the concentration of the dopant Si in the current spreading layer.

[0177] In some embodiments of the present specification, by providing the current spreading layer, the current spreading layer is used to improve the current lateral and longitudinal spreading efficiency of the N-type semiconductor of the semiconductor laser element, reduce the bulk resistance and contact resistance of the N-type semiconductor, and reduce the voltage of the semiconductor laser element from 8.0V or more to 5V or less, thereby reducing the power consumption of the semiconductor laser element.

[0178] Having now described the fundamental concepts, it can be apparent to those with skill in the art that the above-described embodiments are only examples and not exhaustive of all possible embodiments that can be devised that are within the scope and spirit of the disclosure. While various modifications, improvements and / or alterations of the described embodiments can become apparent to the skilled artisan, it is intended that the scope of the disclosure be limited only by the appended claims. Accordingly, any modifications, improvements and / or alterations are deemed a part of the disclosure.

[0179] Also, the use of "an" or "one" to describe the singular use of an embodiment of the disclosure is not a limitation of that embodiment to a single embodiment unless the context clearly indicates otherwise. For example, as analog electronic devices are often used in pairs, the singular use of "an" or "one" to describe such a device can encompass both devices in the pair. Likewise, the singular use of "a" or "one" to describe "a feature" of an embodiment of the disclosure is not a limitation of that embodiment to a single feature unless the context clearly indicates otherwise. For example, as analog electronic devices are often used in pairs, the singular use of "a" or "one" to describe such a device can encompass both devices in the pair.

[0180] Similarly, it is to be noticed that the term "comprising", used in the description, is not to be interpreted as being restricted to the means listed thereafter; it does not exclude other elements or steps. It is thus to be interpreted as specifying the presence of the stated features, integers, steps or components as referred to, but does not preclude the presence or addition of one or more other features, integers, steps or components, or groups thereof. Thus, the scope of the expression should be commensurate to the scope of the appended claims.

[0181] Some embodiments use numerical ranges to describe quantities of components, attributes, etc. It should be understood that such numerical ranges described in the embodiments are, in some examples, modified by the word "about". Unless otherwise indicated, "about" indicates that the value can vary by ±20%. Accordingly, numerical parameters such as those for quantities of components, attributes, etc. utilized in the specification and claims are approximations. Although the exact numerical values used in the specification and claims are approximations, those skilled in the art are capable of manufacturing and using compounds and compositions of the present disclosure without undue experimentation. In some embodiments, numerical parameters are approximations that can vary depending on the desired properties sought to be obtained by the present disclosure. In some embodiments, numerical parameters are approximations that can vary depending on the desired properties sought to be obtained by the present disclosure. In some embodiments, numerical values always contained certain errors necessarily resulting from round-off, measurement technique, approach, etc.

[0182] Each patent, patent application, patent publication, and other material cited in this specification is hereby incorporated by reference in its entirety herein for the teachings relevant to the sentence and / or paragraph in which the reference is presented. Document histories, to the extent not inconsistent with the pertinent U.S. patent application file history, are also incorporated by reference herein. To the extent that material incorporated by reference contradicts or contradicts any portion of this specification, including definition, the portion of the material incorporated by reference prevails. Note, however, that in the event of inconsistencies between any such material and the present specification, including definitions, the present specification, including definitions, will control.

[0183] Finally, it should be understood that the embodiments described herein are merely exemplary of the principles of the present description. Other embodiments can be devised without departing from the scope of the present description. Accordingly, the embodiments described herein are not intended to limit the scope of the present description, but rather are intended to be exemplary thereof.

Claims

1. A semiconductor laser element, comprising, from bottom to top, a substrate, a lower confinement layer, a lower waveguide layer, an active layer, an upper waveguide layer, an electron blocking layer, and an upper confinement layer, characterized in that, The active layer satisfies at least one of the following: the ratio of Al to H elements satisfies a first preset ratio distribution; the ratio of In to H elements satisfies a second preset ratio distribution; the ratio of Si to H elements satisfies a third preset ratio distribution; the ratio of Mg to H elements satisfies a fourth preset ratio distribution; and the ratio of C to O elements satisfies a fifth preset ratio distribution.

2. A semiconductor laser element as described in claim 1, characterized in that, The second preset proportional distribution corresponds to the curve distribution of the first function, where the first function is y = xsinx, x ≥ 0; The third preset proportional distribution corresponds to the curve distribution of the second function, which is y = px. 2 +qx+r, where p<0, and r and q are arbitrary values; The fourth preset ratio distribution, the first preset ratio distribution, and the fifth preset ratio distribution respectively correspond to the curve distribution of the third function, which is a line number function.

3. A semiconductor laser element as described in claim 1, characterized in that, The angle of descent of the peak position of the second preset proportional distribution toward the lower limiting layer is α1; The upward angle of the valley position of the second preset proportional distribution towards the lower limiting layer is β1; The peak position of the sixth preset ratio distribution satisfying the content ratio of In and H elements in the upper waveguide layer decreases at an angle γ1 towards the upper confinement layer. The peak position of the seventh preset ratio distribution satisfying the content ratio of In and H elements in the lower waveguide layer decreases by an angle δ towards the lower confinement layer. The angle of descent of the peak position of the third preset proportional distribution toward the lower limiting layer is θ1; Where: 10°≤γ1≤θ1≤β1≤α1≤δ≤90°.

4. A semiconductor laser element as described in claim 1, characterized in that, The peak value of the dielectric constant distribution of the upper waveguide layer is greater than or equal to the peak value of the dielectric constant distribution of the lower waveguide layer; The peak value of the refractive index coefficient distribution of the upper waveguide layer is greater than or equal to the peak value of the refractive index coefficient distribution of the lower waveguide layer. The valley value of the dielectric constant distribution of the upper waveguide layer is less than or equal to the valley value of the dielectric constant distribution of the lower waveguide layer; The valley value of the refractive index coefficient distribution of the upper waveguide layer is less than or equal to the valley value of the refractive index coefficient distribution of the lower waveguide layer.

5. A semiconductor laser element as described in claim 4, characterized in that, The dielectric constant distribution of the upper waveguide layer corresponds to the curve distribution of the fourth function, which is y = log a x(a>1); The dielectric constant distribution of the lower waveguide layer corresponds to the curve distribution of the fifth function, which is y = dx + e, where d and e are arbitrary values; The refractive index coefficient distribution of the upper waveguide layer corresponds to the curve distribution of the sixth function, which is y = log b x(b>1); The refractive index coefficient distribution of the lower waveguide layer corresponds to the curve distribution of the seventh function, which is y = fx + g, where f and g are arbitrary values; The ratio of In to O elements in the upper waveguide layer satisfies the sixth preset ratio distribution, which corresponds to the curve distribution of the eighth function, y = log c x(c>1); The ratio of In to O elements in the lower waveguide layer satisfies the seventh preset ratio distribution, which corresponds to the curve distribution of the ninth function, where the ninth function is y = hx + j, and h and j are arbitrary values. The coefficients in the fourth function, the sixth function, and the eighth function have the following relationship: 1 < a ≤ b ≤ c; The coefficients in the fifth function, the seventh function, and the ninth function have the following relationship: g≤e≤j.

6. A semiconductor laser element as described in claim 4, characterized in that, The ratio of In to H elements in the lower waveguide layer satisfies the eighth preset ratio distribution, which corresponds to the curve distribution in the third quadrant of the tenth function, y = sinx / x. 2 , The ratio of In to H elements in the upper waveguide layer satisfies the ninth preset ratio distribution, which corresponds to the curve distribution of the eleventh function, y = x. 1 / 2 ; The ratio of Si to H elements in the lower waveguide layer satisfies the tenth preset ratio distribution, which corresponds to the curve distribution of the twelfth function, y = lnx / e. x ; The curve distribution of the thirteenth function corresponds to the eleventh preset ratio distribution satisfying the ratio of Al to H elements and the twelfth preset ratio distribution satisfying the ratio of C to O elements in the lower waveguide layer. The thirteenth function is a constant function.

7. A semiconductor laser element as described in claim 1, characterized in that, The active layer includes a first active layer and a second active layer; the Phillips ionization degree distribution of the first active layer exhibits a V-shaped distribution, which corresponds to the curve distribution of the fourteenth function, y = x. 2 +e x ; The conduction band effective state density distribution of the first active layer has an inverted V-shaped distribution, and the conduction band effective state density distribution corresponds to the third quadrant curve distribution of the fifteenth function, which is y = sinx / x; The breakdown field strength distribution of the first active layer follows a first parabolic distribution, with the opening of the first parabola facing upwards. The electric field strength distribution corresponds to the curve distribution of the sixteenth function, which is y = Ax. 2 +Bx+C, A>0, B and C are arbitrary numbers; The thermal conductivity distribution of the first active layer follows a second parabolic distribution, with the second parabola opening downwards. This thermal conductivity distribution corresponds to the curve distribution of the seventeenth function, y = Dx. 2 +Ex+F, D<0, E and F are arbitrary numbers; The ratio of In to H elements in the first active layer satisfies a thirteenth preset ratio distribution that follows a third parabolic distribution, with the third parabola opening upwards. This thirteenth preset ratio distribution corresponds to the curve distribution of the eighteenth function, y = Gx. 2 +Hx+I, G>0, where H and I are arbitrary numbers.

8. A semiconductor laser element as described in claim 1, characterized in that, The electron affinity distribution, Phillips ionization distribution, electron mobility distribution, and effective electron mass distribution of the electron blocking layer exhibit a V-shaped distribution; The electron affinity distribution of the electron blocking layer corresponds to the curve distribution of the nineteenth function, which is y = u. | x-m| u > 1, m > 0; The Phillips degree of ionization distribution of the electron blocking layer corresponds to the curve distribution of the twentieth function, which is y = w |x-n| w > 1, n > 0; The electron mobility distribution of the electron blocking layer corresponds to the curve distribution of the twenty-first function, which is y = s |x-t|， s > 1, t > 0; The effective electron mass distribution of the electron blocking layer corresponds to the third quadrant curve distribution of the twenty-second function, which is y = x + k / x, where k > 0.

9. A semiconductor laser element as described in claim 1, characterized in that, A current spreading layer is provided between the substrate and the lower confinement layer; the current spreading layer is composed of at least one material selected from GaN, AlGaN, AlInGaN, AlInN, and AlN. The thickness of the current spreading layer is 10 angstroms to 5000 angstroms; The Al element content distribution of the current spreading layer corresponds to the third quadrant curve distribution of the twenty-third function, which is y = sinx / x. 2 ; The Si doping concentration distribution of the current spreading layer corresponds to the quadratic function curve distribution, and the coefficient of the quadratic term of the quadratic function is less than 0. The Si doping concentration distribution of the substrate corresponds to the curve distribution of the twenty-fourth function, which is y = sin|x|. The C, O, and H element content distributions of the current spreading layer correspond to the curve distributions of the twenty-fifth function, which is y = arccotx. The Al content distribution of the current spreading layer decreases towards the substrate, with a decreasing angle of α2, where 45°≤α2≤90°. The Si doping concentration distribution decreases towards the substrate, with a decreasing angle of β2, where 40°≤β2≤85°. The distribution of H element content shows a decreasing trend towards the substrate, with a decreasing angle of γ2, where 30°≤γ2≤75°; The O element content distribution shows a decreasing trend towards the substrate, with a decreasing angle of θ2, where 40°≤θ2≤85°; The C element content distribution decreases towards the substrate, with a decreasing angle of [value missing]. The variations in the Al, Si doping concentration, C, O, and H element content distributions of the current spreading layer have the following relationships:

10. A semiconductor laser element as described in claim 1, characterized in that: The active layer is composed of at least one material selected from GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond, and the thickness of the active layer is 10 angstroms to 100 angstroms. The barrier layer of the active layer is composed of at least one material selected from GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond, and the thickness of the barrier layer of the active layer is 10 angstroms to 200 angstroms. The lower confinement layer, the lower waveguide layer, the electron blocking layer, and the upper confinement layer are each composed of at least one material selected from GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond. The substrate includes any one of the following: sapphire composite substrate, silicon composite substrate, Ge composite substrate, SiC composite substrate, AlN composite substrate, GaN composite substrate, GaAs composite substrate, InP composite substrate, InAs composite substrate, GaSb composite substrate, sapphire / SiO2 composite substrate, Mo composite substrate, TiW composite substrate, CuW composite substrate, Cu composite substrate, sapphire / AlN composite substrate, diamond composite substrate, graphene composite substrate, sapphire / SiNx composite substrate, sapphire / SiO2 / SiNx composite substrate, sapphire / SiNx / SiO2 composite substrate, magnesium aluminum spinel composite substrate, MgAl2O4 composite substrate, MgO composite substrate, ZnO composite substrate, ZrB2, LiAlO2 composite substrate, and LiGaO2 composite substrate.

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