Semiconductor processing device

Abstract

The present application relates to the field of semiconductor etching, and discloses a semiconductor processing device. In the semiconductor processing device, four gas inlets of a processing chamber are supplied with gas by means of four gas supply channels of a gas supply cabinet, respectively. Gas from the gas supply cabinet flows to a central region of a workpiece under processing through a central gas supply channel and a central gas inlet, to an intermediate region of said workpiece through an intermediate gas supply channel and an intermediate gas inlet, to an edge region of said workpiece through an edge gas supply channel and an edge gas inlet, and to an edge region of said workpiece through an adjustment gas supply channel and an adjustment gas inlet, so that gases entering the processing chamber from different directions are respectively distributed at different regions of said workpiece, so as to influence the gas distribution at the different regions of said workpiece, thereby effectively improving the uniformity of said workpiece; moreover, by supplying gas to the four gas inlets by means of the four gas supply channels of the gas supply cabinet, the gas inlet control capability of the processing chamber is greatly improved, thereby achieving wide process adaptability.

Description

A semiconductor processing device

[0001] The present application claims priority to the Chinese patent application No. 2024106960713, filed on May 31, 2024, and entitled "A semiconductor processing device", the content of which is incorporated herein by reference in its entirety. TECHNICAL FIELD

[0002] The present application relates to the field of semiconductor etching technology, more particularly, to a semiconductor processing device. BACKGROUND

[0003] With the development of semiconductor devices, the precision of wafer patterns is getting higher and higher, and a series of dry etching technologies have been developed, among which inductively coupled plasma etching (ICP) is a plasma etching technology for processing micro-nano structures. It has the advantages of fast etching, high selectivity, high anisotropy, small etching damage, high controllability of cross-section profile, and high etching surface flatness, and is widely used at present.

[0004] Inductively coupled plasma etching (ICP) occurs in a vacuum reaction chamber. An electrostatic chucking chuck is placed on a base in the middle of the vacuum reaction chamber, and a wafer is located on the upper surface of the electrostatic chucking chuck. A source radio frequency is connected to the top of the vacuum reaction chamber. The high-frequency radio frequency power output by the source radio frequency power supply is used to ignite and provide plasma density. A bias radio frequency is connected to the electrostatic chucking chuck and the base on which it is placed. The low-frequency radio frequency power output by the bias radio frequency power supply is used to provide plasma energy and incident angle. A gas inlet system is provided in the upper half of the vacuum reaction chamber to introduce reaction gas, and an exhaust system is provided in the lower half of the vacuum reaction chamber to achieve and maintain a vacuum state.

[0005] Since the controllable distribution of process gas on the wafer surface is the premise and guarantee of etching uniformity, but in the prior art, on the one hand, during the gas inlet process in the vacuum reaction chamber, the attenuation of the gas flow causes differences in gas density in different areas of the wafer, and on the other hand, during the gas extraction process in the vacuum reaction chamber, the edge area of the wafer is closer to the gas extraction channel, and the gas flow rate in this area is faster than that in the center area of the wafer. These will cause differences in gas between the edge area and the center area of the wafer, making it difficult to control the distribution of the gas and affecting the uniformity of the whole wafer. At the same time, when mixing processes in a vacuum reaction chamber, due to the limitation of the gas inlet structure of the vacuum reaction chamber, one of the processes can obtain optimal uniformity, while the other processes cannot obtain optimal uniformity.

[0006] Therefore, how to improve the control ability of the gas in the vacuum reaction chamber is a technical problem to be solved by those skilled in the art.

[0007] SUMMARY

[0008] In view of the above problems, in order to solve the above problems, the application provides a semiconductor processing device to achieve the purpose of improving the control ability of the vacuum reaction chamber gas, and the technical scheme is as follows:

[0009] The application provides a semiconductor processing device, which comprises a processing chamber and a gas supply cabinet.

[0010] The processing chamber comprises a chamber cover and a chamber body, which constitute a cavity structure of the processing chamber, and a workpiece to be processed is located inside the cavity structure.

[0011] A plurality of central gas inlets and a plurality of intermediate gas inlets are located at the top of the cavity structure.

[0012] A plurality of edge gas inlets and a plurality of adjustment gas inlets are located on the side wall of the chamber body close to the chamber cover.

[0013] The gas supply cabinet comprises a central gas supply channel, an intermediate gas supply channel, an edge gas supply channel and an adjustment gas supply channel.

[0014] The central gas supply channel is connected with the central gas inlet, and the gas in the gas supply cabinet flows to the central area of the workpiece to be processed through the central gas supply channel and the central gas inlet.

[0015] The intermediate gas supply channel is connected with the intermediate gas inlet, and the gas in the gas supply cabinet also flows to the intermediate area of the workpiece to be processed through the intermediate gas supply channel and the intermediate gas inlet.

[0016] The edge gas supply channel is connected with the edge gas inlet, and the gas in the gas supply cabinet also flows to the edge area of the workpiece to be processed through the edge gas supply channel and the edge gas inlet.

[0017] The adjustment gas supply channel is connected with the adjustment gas inlet, and the gas in the gas supply cabinet also flows to the edge area of the workpiece to be processed through the adjustment gas supply channel and the adjustment gas inlet.

[0018] Preferably, in the above semiconductor processing device, the processing chamber further comprises:

[0019] a dielectric window located on a side of the cavity facing the cavity cover, a central region of the dielectric window having a gas jet nozzle, the gas jet nozzle comprising a central gas inlet channel extending through a center region of the gas jet nozzle in a first direction, and an intermediate gas inlet channel surrounding the central gas inlet channel, a plurality of the central gas inlets being located at an end of the central gas inlet channel distal to the cavity cover, a plurality of the intermediate gas inlets being located at an end of the intermediate gas inlet channel distal to the cavity cover and facing a side of the cavity sidewall, the first direction being perpendicular to a plane in which the dielectric window is located;

[0020] the central gas supply channel is connected to the central gas inlets through the central gas inlet channel, and the intermediate gas supply channel is connected to the intermediate gas inlets through the intermediate gas inlet channel.

[0021] Preferably, in the semiconductor processing apparatus described above, the processing chamber further comprises:

[0022] a gas distribution ring structure located between the cavity and the dielectric window, the gas distribution ring structure comprising a plurality of edge gas inlet channels proximal to a side of the dielectric window, and a plurality of adjustment gas inlet channels distal to a side of the dielectric window, a plurality of the edge gas inlets being located at a side of the edge gas inlet channels facing the cavity structure, and a plurality of the adjustment gas inlets being located at a side of the adjustment gas inlet channels facing the cavity structure;

[0023] the edge gas supply channel is connected to the edge gas inlets through the edge gas inlet channel, and the adjustment gas supply channel is connected to the adjustment gas inlets through the adjustment gas inlet channel.

[0024] Preferably, in the semiconductor processing apparatus described above, the processing chamber further comprises:

[0025] a plurality of coils located on a side of the dielectric window facing the cavity cover, the coils being connected to a source radio frequency power source, the source radio frequency power source being configured to output high frequency radio frequency power to ignite and control plasma density.

[0026] Preferably, in the semiconductor processing apparatus described above, the processing chamber further comprises:

[0027] a first electrode located inside the cavity structure, the workpiece to be processed being located on a side of the first electrode facing the cavity cover, the first electrode being connected to a bias radio frequency power source, the bias radio frequency power source being configured to output low frequency radio frequency power to control plasma energy and incident angle.

[0028] Preferably, in the semiconductor processing apparatus described above, the number of the intermediate gas inlets is greater than or equal to 6, and the plurality of the intermediate gas inlets are uniformly distributed in a circumferential direction;

[0029] The number of the edge gas inlets is greater than or equal to 6, and the plurality of edge gas inlets are uniformly distributed in a circumferential direction.

[0030] The number of the adjustment gas inlets is greater than or equal to 6, and the plurality of adjustment gas inlets are uniformly distributed in a circumferential direction.

[0031] Preferably, in the semiconductor processing device, the gas supply cabinet further comprises:

[0032] At least one bulk gas supply source for providing bulk gas, the bulk gas supply source being connected to at least the central gas supply channel, the intermediate gas supply channel and the edge gas supply channel.

[0033] Preferably, in the semiconductor processing device, the gas supply cabinet further comprises a flow divider.

[0034] When the gas supply cabinet comprises one bulk gas supply source, the flow divider is connected to at least the bulk gas supply source, the central gas supply channel, the intermediate gas supply channel and the edge gas supply channel, respectively.

[0035] Preferably, in the semiconductor processing device, when the flow divider is a two-channel flow divider, a first end of the two-channel flow divider is connected to the bulk gas supply source, a second end of the two-channel flow divider is connected to the central gas supply channel, and a third end of the two-channel flow divider is connected to the intermediate gas supply channel and the edge gas supply channel, respectively.

[0036] Preferably, in the semiconductor processing device, the gas supply cabinet further comprises a first diaphragm valve and a plurality of second diaphragm valves.

[0037] The first diaphragm valve is connected to the bulk gas supply source and the two-channel flow divider, respectively, and is used to control the on-off of the bulk gas into the two-channel flow divider.

[0038] First ends of the plurality of second diaphragm valves are connected to the two-channel flow divider, second ends of the plurality of second diaphragm valves are connected to the intermediate gas supply channel and the edge gas supply channel, respectively, and the second diaphragm valves are used to control the on-off of the bulk gas into the intermediate gas supply channel and the on-off of the bulk gas into the edge gas supply channel.

[0039] Preferably, in the semiconductor processing device, a value range of a flow dividing ratio of the two-channel flow divider is 19:1 to 1:19.

[0040] Preferably, in the semiconductor processing device, when the flow divider is a three-channel flow divider, a first end of the three-channel flow divider is connected with the bulk gas supply source, and second ends of the three-channel flow divider are respectively connected with the center gas supply channel, the intermediate gas supply channel and the edge gas supply channel.

[0041] Preferably, in the semiconductor processing device, a flow distribution ratio of the bulk gas flowing from the three-channel flow divider to the center gas supply channel, the intermediate gas supply channel and the edge gas supply channel is M1:N1:P1, wherein M1, N1 and P1 are each in a range of 1-18.

[0042] Preferably, in the semiconductor processing device, when the flow divider is a four-channel flow divider, a first end of the four-channel flow divider is connected with the bulk gas supply source, and second ends of the four-channel flow divider are respectively connected with the center gas supply channel, the intermediate gas supply channel, the edge gas supply channel and the adjustment gas supply channel.

[0043] Preferably, in the semiconductor processing device, a flow distribution ratio of the bulk gas flowing from the four-channel flow divider to the center gas supply channel, the intermediate gas supply channel, the edge gas supply channel and the adjustment gas supply channel is M2:N2:P2:Q1, wherein M2, N2 and P2 are each in a range of 1-17, and Q1 is 1.

[0044] Preferably, in the semiconductor processing device, the gas supply cabinet further comprises:

[0045] a helium gas supply source for providing helium gas, the helium gas supply source being connected with the center gas supply channel, the intermediate gas supply channel, the edge gas supply channel and the adjustment gas supply channel respectively.

[0046] Preferably, in the semiconductor processing device, the gas supply cabinet further comprises a plurality of third diaphragm valves.

[0047] First ends of the plurality of third diaphragm valves are connected with the helium gas supply source, and second ends of the plurality of third diaphragm valves are respectively connected with the center gas supply channel, the intermediate gas supply channel, the edge gas supply channel and the adjustment gas supply channel.

[0048] The third diaphragm valves are used for controlling the on-off of the helium gas into the center gas supply channel, the on-off of the helium gas into the intermediate gas supply channel, the on-off of the helium gas into the edge gas supply channel and the on-off of the helium gas into the adjustment gas supply channel.

[0049] Preferably, in the semiconductor processing device, the gas supply cabinet further comprises:

[0050] An adjusting gas supply source is arranged for providing an adjusting gas, and the adjusting gas supply source is connected with the adjusting gas supply channel.

[0051] Preferably, in the semiconductor processing device, the adjusting gas includes O2, C4F6, CF4 or CH3F.

[0052] Preferably, in the semiconductor processing device, the gas supply cabinet further includes a fourth diaphragm valve.

[0053] The fourth diaphragm valve is connected with the adjusting gas supply source and the adjusting gas supply channel respectively, and the fourth diaphragm valve is used for controlling the on-off of the adjusting gas into the adjusting gas supply channel.

[0054] Compared with the prior art, the present application has the following beneficial effects:

[0055] The semiconductor processing device provided by the present application includes a processing chamber and a gas supply cabinet, the processing chamber has four kinds of gas inlets including a center gas inlet, a middle gas inlet, an edge gas inlet and an adjusting gas inlet, and the four kinds of gas inlets are respectively supplied with gas through four kinds of gas supply channels of the gas supply cabinet, wherein the gas of the gas supply cabinet can flow to the center area of the workpiece to be processed through the center gas supply channel and the center gas inlet, so as to affect the gas distribution of the center area of the workpiece to be processed, the gas of the gas supply cabinet can also flow to the middle area of the workpiece to be processed through the middle gas supply channel and the middle gas inlet, so as to affect the gas distribution of the middle area of the workpiece to be processed, the gas of the gas supply cabinet can also flow to the edge area of the workpiece to be processed through the edge gas supply channel and the edge gas inlet, so as to affect the gas distribution of the edge area of the workpiece to be processed, and the gas of the gas supply cabinet can also flow to the edge area of the workpiece to be processed through the adjusting gas supply channel and the adjusting gas inlet, so as to affect the gas distribution of the edge area of the workpiece to be processed; the present application is provided with four kinds of gas inlets on the side of the cavity facing the cover, which are used for guiding the gas into the processing chamber from different directions, so that the gas entering the processing chamber from different directions is respectively distributed in different areas of the workpiece to be processed, so as to affect the gas distribution of different areas of the workpiece to be processed, effectively improving the uniformity of the workpiece to be processed, and the four kinds of gas supply channels of the gas supply cabinet are respectively used for supplying gas to the four kinds of gas inlets, greatly improving the control ability of the gas inlet of the processing chamber, and having wider process adaptability. BRIEF DESCRIPTION OF DRAWINGS

[0056] In order to make the technical solutions in the embodiments of the present application or the prior art clearer, the accompanying drawings needed in the embodiments or prior art description will be briefly introduced. Obviously, the accompanying drawings in the following description only need to explain the embodiments of the present application, and other drawings can be obtained by those skilled in the art without any creative effort on the basis of the provided drawings.

[0057] Fig. 1 is a structural schematic diagram of a semiconductor processing device provided by an embodiment of the present application;

[0058] Fig. 2 is a structural schematic diagram of a processing chamber provided by an embodiment of the present application;

[0059] Fig. 3 is a schematic diagram of a gas distribution ring structure provided by an embodiment of the present application;

[0060] Fig. 4 is a partial sectional schematic diagram of a gas distribution ring structure provided by an embodiment of the present application;

[0061] Fig. 5 is a structural schematic diagram of another semiconductor processing device provided by an embodiment of the present application;

[0062] Fig. 6 is a structural schematic diagram of a gas supply cabinet provided by an embodiment of the present application;

[0063] Fig. 7 is a structural schematic diagram of still another semiconductor processing device provided by an embodiment of the present application;

[0064] Fig. 8 is a structural schematic diagram of another gas supply cabinet provided by an embodiment of the present application;

[0065] Fig. 9 is a structural schematic diagram of still another semiconductor processing device provided by an embodiment of the present application;

[0066] Fig. 10 is a structural schematic diagram of still another gas supply cabinet provided by an embodiment of the present application.

[0067] Reference signs:

[0068] 1 - processing chamber; 2 - gas supply cabinet; 3 - chamber cover; 4 - chamber body; 5 - workpiece to be processed; 6 - support structure; 7 - gas outlet; 8 - dielectric window; 9 - gas jet nozzle; 10 - central gas inlet channel; 11 - intermediate gas inlet channel; 12 - gas distribution ring structure; 13 - edge gas inlet channel; 14 - adjustment gas inlet channel; 15 - edge gas inlet; 16 - adjustment gas inlet; 17 - coil; 18 - first electrode; 19 - electrostatic chuck; 20 - chuck base; 21 - central gas supply channel; 22 - intermediate gas supply channel; 23 - edge gas supply channel; 24 - adjustment gas supply channel; 25 - flow divider; 26 - first diaphragm valve; 27 - second diaphragm valve; 28 - third diaphragm valve; 29 - fourth diaphragm valve. DETAILED DESCRIPTION

[0069] With reference to the accompanying drawings, the technical solutions in the embodiments of the present application will be described clearly and completely. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all the embodiments of the present application. Based on the embodiments in the present application, all the other embodiments obtained by those skilled in the art without creative work fall within the protection scope of the present application.

[0070] Based on the content described in the background, the inventors found in the process of creating the present application that when inductively coupled plasma etching (ICP) is performed in a vacuum reaction chamber, on the one hand, during the process of gas inlet into the vacuum reaction chamber, the attenuation of the gas flow causes the gas density to be different in different regions of the wafer, and on the other hand, during the process of gas extraction from the vacuum reaction chamber, the edge region of the wafer is closer to the gas extraction channel, and the gas flow rate in this region is faster than that in the center region of the wafer, which all cause the gas in the edge region and the center region of the wafer to be different, the distribution of the gas is difficult to control, and the uniformity of the whole wafer is affected. At the same time, when a mixed process is performed in a vacuum reaction chamber, due to the limitation of the gas inlet structure of the vacuum reaction chamber, one of the processes can obtain the optimal uniformity, while the other processes cannot obtain the optimal uniformity. Therefore, how to improve the control ability of the gas in the vacuum reaction chamber is a technical problem to be solved by those skilled in the art.

[0071] It should be explained that the present application is not limited to inductively coupled plasma etching (ICP), but can also be used in devices such as inductively coupled plasma chemical vapor deposition (ICP-CVD), and the following will be specifically described by taking inductively coupled plasma etching (ICP) as an example.

[0072] Based on this, the present application provides a semiconductor processing device to achieve the purposes of improving the control ability of the gas in the vacuum reaction chamber and improving the uniformity of the wafer.

[0073] In order to make the above-mentioned purposes, features and advantages of the present application more apparent and easy to understand, the present application will be further described in detail below with reference to the accompanying drawings and specific embodiments.

[0074] The present application provides a semiconductor processing device, referring to FIG. 1, which is a structural schematic diagram of a semiconductor processing device provided by an embodiment of the present application. In combination with FIG. 1, the semiconductor processing device comprises a processing chamber 1 and a gas supply cabinet 2.

[0075] The processing chamber 1 comprises a cavity cover 3 and a cavity body 4, the cavity cover 3 and the cavity body 4 constitute a cavity structure of the processing chamber 1, and a workpiece to be processed 5 is located inside the cavity structure; a plurality of center gas inlets and a plurality of intermediate gas inlets located at the top of the cavity structure; a plurality of edge gas inlets and a plurality of adjustment gas inlets located on the side wall of the cavity body 4 close to the cavity cover 3.

[0076] The gas supply cabinet 2 comprises a center gas supply channel 21, an intermediate gas supply channel 22, an edge gas supply channel 23 and an adjustment gas supply channel 24; the center gas supply channel 21 is connected with the center gas inlet, the gas of the gas supply cabinet 2 flows to the center area of the workpiece 5 through the center gas supply channel 21 and the center gas inlet; the intermediate gas supply channel 22 is connected with the intermediate gas inlet, the gas of the gas supply cabinet 2 also flows to the intermediate area of the workpiece 5 through the intermediate gas supply channel 22 and the intermediate gas inlet; the edge gas supply channel 23 is connected with the edge gas inlet, the gas of the gas supply cabinet 2 also flows to the edge area of the workpiece 5 through the edge gas supply channel 23 and the edge gas inlet; the adjustment gas supply channel 24 is connected with the adjustment gas inlet, the gas of the gas supply cabinet 2 also flows to the edge area of the workpiece 5 through the adjustment gas supply channel 24 and the adjustment gas inlet.

[0077] Specifically, in the embodiment of the present application, as shown in Figure 1, the inside of the cavity structure further comprises a support structure 6, the support structure 6 is connected with the side wall of the cavity 4, and the workpiece 5 is located on the side of the support structure 6 facing the cavity cover 3; the bottom of the cavity 4 also has a gas outlet 7, because the edge area of the workpiece 5 is close to the gas outlet, the gas extraction speed of the gas located in the edge area of the workpiece 5 is faster, the gas in the edge area of the workpiece 5 is reduced, and the etching rate will be slower, therefore, multiple adjustment gas inlets are added to increase the gas flowing to the edge area of the workpiece 5, so as to improve the etching rate of the edge area of the workpiece 5; the number of the intermediate gas inlets is greater than or equal to 6; the number of the edge gas inlets is greater than or equal to 6; the number of the adjustment gas inlets is greater than or equal to 6.

[0078] As can be known from the above description, the semiconductor processing device provided by the embodiment of the application comprises a processing chamber 1 and a gas supply cabinet 2, the processing chamber 1 has four kinds of gas inlets, i.e., a center gas inlet, a middle gas inlet, an edge gas inlet and an adjustment gas inlet, and the four kinds of gas inlets are respectively supplied with gas through four kinds of gas supply channels of the gas supply cabinet 2, wherein the gas of the gas supply cabinet 2 can flow to the center area of the workpiece 5 to be processed through the center gas supply channel 21 and the center gas inlet, so as to affect the gas distribution of the center area of the workpiece 5 to be processed, the gas of the gas supply cabinet 2 can also flow to the middle area of the workpiece 5 to be processed through the middle gas supply channel 22 and the middle gas inlet, so as to affect the gas distribution of the middle area of the workpiece 5 to be processed, the gas of the gas supply cabinet 2 can also flow to the edge area of the workpiece 5 to be processed through the edge gas supply channel 23 and the edge gas inlet, so as to affect the gas distribution of the edge area of the workpiece 5 to be processed, and the gas of the gas supply cabinet 2 can also flow to the edge area of the workpiece 5 to be processed through the adjustment gas supply channel 24 and the adjustment gas inlet, so as to affect the gas distribution of the edge area of the workpiece 5 to be processed; the four kinds of gas inlets are arranged on the side of the cavity 4 facing the cavity cover 3, and the gas entering the processing chamber 1 from different directions is distributed in different areas of the workpiece 5 to be processed, so as to affect the gas distribution of different areas of the workpiece 5 to be processed, effectively improving the uniformity of the workpiece 5 to be processed, and the four kinds of gas supply channels of the gas supply cabinet 2 are respectively used to supply gas to the four kinds of gas inlets, greatly improving the control ability of the gas inlet of the processing chamber 1, and having wider process adaptability.

[0079] Optionally, in another embodiment of the application, the processing chamber 1 in the above semiconductor processing device is further described, referring to FIGS. 2-4, FIG. 2 is a structural schematic view of a processing chamber provided by the embodiment of the application, FIG. 3 is a schematic view of a gas distribution ring structure provided by the embodiment of the application, and FIG. 4 is a partial sectional schematic view of a gas distribution ring structure provided by the embodiment of the application, in combination with FIGS. 2-4, the processing chamber 1 further comprises:

[0080] A medium window 8 is located on the side of the cavity 4 facing the cavity cover 3, the central area of the medium window 8 is provided with a gas jet nozzle 9, the gas jet nozzle 9 includes a central gas inlet channel 10 penetrating the central area of the gas jet nozzle 9 in a first direction A, and a middle gas inlet channel 11 surrounding the central gas inlet channel 10, a plurality of central gas inlets are located at the end of the central gas inlet channel 10 away from the cavity cover 3, a plurality of middle gas inlets are located at the end of the middle gas inlet channel 11 away from the cavity cover 3 and facing the side of the side wall of the cavity 4, and the first direction A is perpendicular to the plane where the medium window 8 is located; the central gas supply channel 21 is connected with the central gas inlet through the central gas inlet channel 10, and the middle gas supply channel 22 is connected with the middle gas inlet through the middle gas inlet channel 11.

[0081] Specifically, in the embodiment of the present application, the gas jet nozzle 9 has a central area and an edge area surrounding the central area, the central area of the gas jet nozzle 9 is penetrated by the central gas inlet channel 10, the bottom of the central gas inlet channel 10 is provided with a plurality of central gas inlets, so as to guide the gas in the gas supply cabinet 2 to flow to the central area of the workpiece 5 to be processed along the first direction A; the edge area of the gas jet nozzle 9 is provided with an annular middle gas inlet channel 11, the middle gas inlet channel 11 does not completely penetrate the gas jet nozzle 9, the length of the middle gas inlet channel 11 in the first direction A is greater than the thickness of the medium window 8 in the first direction A, and a plurality of middle gas inlets are uniformly distributed in a circumferential direction, that is, a plurality of middle gas inlets are uniformly distributed on the side wall of the gas jet nozzle 9, the gas in the middle gas inlet channel 11 flows horizontally to the inside of the cavity structure through a plurality of middle gas inlets located on the side wall of the gas jet nozzle 9, so that the gas flowing from the middle gas inlet is finally distributed in the middle area of the workpiece 5 to be processed.

[0082] A gas uniformizing ring structure 12 is located between the cavity 4 and the medium window 8, the gas uniformizing ring structure 12 includes a plurality of edge gas inlet channels 13 close to the side of the medium window 8 and a plurality of adjustment gas inlet channels 14 away from the side of the medium window 8, a plurality of edge gas inlets 15 are located on the side of the edge gas inlet channel 13 facing the cavity structure, and a plurality of adjustment gas inlets 16 are located on the side of the adjustment gas inlet channel 14 facing the cavity structure; the edge gas supply channel 23 is connected with the edge gas inlet 15 through the edge gas inlet channel 13, and the adjustment gas supply channel 24 is connected with the adjustment gas inlet 16 through the adjustment gas inlet channel 14.

[0083] Specifically, in the embodiment of the present application, as shown in FIG. 3 and FIG. 4, the uniform gas ring structure 12 has a ring-shaped edge gas inlet channel 13 on the side facing the medium window 8, and has a ring-shaped adjusting gas inlet channel 14 on the side facing away from the medium window, the edge gas inlet channel 13 and the adjusting gas inlet channel 14 are not connected in the first direction A; the uniform gas ring structure 12 has two rows of gas inlets on the side facing the cavity structure, the upper row of gas inlets are edge gas inlets 15 connected with the edge gas inlet channel 13, a plurality of the edge gas inlets 15 are uniformly distributed in the circumferential direction, that is, a plurality of the edge gas inlets 15 are uniformly distributed on the side of the uniform gas ring structure 12 facing the cavity structure, the gas in the edge gas inlet channel 13 flows horizontally to the inside of the cavity structure through the edge gas inlets 15, so that the gas flowing from the edge gas inlets 15 is ultimately distributed in the edge area of the workpiece 5 to be processed; the lower row of gas inlets are adjusting gas inlets 16 connected with the adjusting gas inlet channel 14, a plurality of the adjusting gas inlets 16 are uniformly distributed in the circumferential direction, that is, a plurality of the adjusting gas inlets 16 are uniformly distributed on the side of the uniform gas ring structure 12 facing the cavity structure, the gas in the adjusting gas inlet channel 14 flows horizontally to the inside of the cavity structure through the adjusting gas inlets 16, so that the gas flowing from the adjusting gas inlets 16 is ultimately distributed in the edge area of the workpiece 5 to be processed.

[0084] A plurality of coils 17 are located on the side of the medium window 8 facing the cavity cover 3, the coils 17 are connected with a source radio frequency power supply, the source radio frequency power supply is used to output high-frequency radio frequency power to ignite and control the plasma density; a first electrode 18 is located inside the cavity structure, the workpiece 5 to be processed is located on the side of the first electrode 18 facing the cavity cover 3, the first electrode 18 is connected with a bias radio frequency power supply, the bias radio frequency power supply is used to output low-frequency radio frequency power to control the energy and incident angle of the plasma.

[0085] Specifically, in the embodiment of the present application, the first electrode 18 includes an electrostatic chucking chuck 19 and a chuck base 20, the electrostatic chucking chuck 19 is connected with the support structure 6 through the chuck base 20, the workpiece 5 to be processed is located on the side of the electrostatic chucking chuck 19 facing away from the chuck base 20, and the chuck base 20 is also connected with the bias radio frequency power supply.

[0086] Optionally, in another embodiment of the present application, the structure of the gas supply cabinet 2 in the above-mentioned semiconductor processing device is further described, and combined with FIG. 5-10, FIG. 5 is a structural schematic diagram of another semiconductor processing device provided by the embodiment of the present application, FIG. 6 is a structural schematic diagram of a gas supply cabinet provided by the embodiment of the present application, FIG. 7 is a structural schematic diagram of another semiconductor processing device provided by the embodiment of the present application, FIG. 8 is a structural schematic diagram of another gas supply cabinet provided by the embodiment of the present application, FIG. 9 is a structural schematic diagram of another semiconductor processing device provided by the embodiment of the present application, and FIG. 10 is a structural schematic diagram of another gas supply cabinet provided by the embodiment of the present application, combined with FIG. 5-10, the gas supply cabinet 2 further comprises:

[0087] at least one bulk gas supply source for providing bulk gas, the bulk gas supply source being connected to at least the central gas supply channel 21, the intermediate gas supply channel 22 and the edge gas supply channel 23; a helium gas supply source for providing helium gas, the helium gas supply source being connected to the central gas supply channel 21, the intermediate gas supply channel 22, the edge gas supply channel 23 and the adjustment gas supply channel 24 respectively; an adjustment gas supply source for providing adjustment gas, the adjustment gas supply source being connected to the adjustment gas supply channel 24.

[0088] Specifically, in the embodiment of the present application, the helium gas provided by the helium gas supply source can enter any one of the gas supply channels, which aims to prevent gas backflow and particle storage in a certain gas supply channel; the adjustment gas provided by the adjustment gas supply source is adjustment gas with small flow rate, when the etching rate of the middle region and the central region of the workpiece 5 is fast and the etching rate of the edge region of the workpiece 5 is slow, the adjustment gas can be introduced to accelerate the etching rate of the edge region of the workpiece 5, when the etching rate of the middle region and the central region of the workpiece 5 is slow and the etching rate of the edge region of the workpiece 5 is fast, the adjustment gas can be introduced to reduce the active gas in the edge region of the workpiece 5, so as to reduce the etching rate of the workpiece 5; the adjustment gas includes but is not limited to O2, C4F6, CF4 or CH3F.

[0089] The gas supply cabinet 2 further comprises a flow divider 25, when the gas supply cabinet 2 comprises one bulk gas supply source, the flow divider 25 is connected to at least the bulk gas supply source, the central gas supply channel 21, the intermediate gas supply channel 22 and the edge gas supply channel 23 respectively.

[0090] Specifically, in the embodiments of the present application, in order to realize gas premixing and accurate control of the pressure and flow rate of each channel, the gas supply cabinet 2 is internally provided with a diaphragm valve, a mass flow controller, a pressure sensor, a pressure regulating valve and a flow divider, etc. The flow divider can accurately divide and control the bulk gas into multiple gas supply channels according to a specified ratio, accurately control the flow rate ratio, and provide better process conditions.

[0091] According to the use of the flow divider, the embodiments of the present application also exemplify several optional embodiments of the gas supply cabinet, which are specifically introduced as follows:

[0092] Embodiment one: as shown in FIGS. 5 and 6, when the flow divider 25 is a two-channel flow divider, the first end of the two-channel flow divider is connected with the bulk gas supply source, the second end of the two-channel flow divider is connected with the central gas supply channel 21, and the third end of the two-channel flow divider is respectively connected with the intermediate gas supply channel 22 and the edge gas supply channel 23, wherein the flow division ratio of the two-channel flow divider is in the range of 19:1 to 1:19.

[0093] The gas supply cabinet 2 further comprises a first diaphragm valve 26 and multiple second diaphragm valves 27. The first diaphragm valve 26 is respectively connected with the bulk gas supply source and the two-channel flow divider, and is used to control the on-off of the bulk gas entering the two-channel flow divider. The first end of each of the multiple second diaphragm valves 27 is connected with the two-channel flow divider, and the second end of each of the multiple second diaphragm valves 27 is respectively connected with the intermediate gas supply channel 22 and the edge gas supply channel 23. The second diaphragm valve 27 is used to control the on-off of the bulk gas entering the intermediate gas supply channel 22 and the on-off of the bulk gas entering the edge gas supply channel 23.

[0094] The gas supply cabinet 2 further comprises multiple third diaphragm valves 28. The first end of each of the multiple third diaphragm valves 28 is connected with the helium gas supply source, and the second end of each of the multiple third diaphragm valves 28 is respectively connected with the central gas supply channel 21, the intermediate gas supply channel 22, the edge gas supply channel 23 and the adjustment gas supply channel 24. The third diaphragm valve 28 is used to control the on-off of the helium gas entering the central gas supply channel 21, the on-off of the helium gas entering the intermediate gas supply channel 22, the on-off of the helium gas entering the edge gas supply channel 23, and the on-off of the helium gas entering the adjustment gas supply channel 24.

[0095] The gas supply cabinet 2 further comprises a fourth diaphragm valve 29. The fourth diaphragm valve 29 is respectively connected with the adjustment gas supply source and the adjustment gas supply channel 24, and is used to control the on-off of the adjustment gas entering the adjustment gas supply channel 24.

[0096] The bulk gas provided by the bulk gas source is precisely divided into two parts of bulk gas by the double-channel flow divider after mixing, one part of bulk gas is introduced into the central gas supply channel 21, and the other part of bulk gas is introduced into the intermediate gas supply channel 22 and the edge gas supply channel 23, at this time the intermediate gas supply channel 22 and the edge gas supply channel 23 are in parallel state, and the opening condition of the gas supply channel needs to be defined according to the specific process; the specific parameters of the split ratio of the double-channel flow divider can be adjusted according to actual needs.

[0097] In the embodiment two, as shown in Figures 7 and 8, when the flow divider 25 is a three-channel flow divider, the first end of the three-channel flow divider is connected with the bulk gas source, and the second end of the three-channel flow divider is connected with the central gas supply channel 21, the intermediate gas supply channel 22 and the edge gas supply channel 23 respectively; wherein the split ratio of the bulk gas flowing from the three-channel flow divider to the central gas supply channel 21, the intermediate gas supply channel 22 and the edge gas supply channel 23 is M1:N1:P1, wherein the value range of M1, N1 and P1 is 1-18, that is, the split ratio of the bulk gas flowing from the three-channel flow divider to the central gas supply channel 21 is 1 / 20 to 18 / 20; the split ratio of the bulk gas flowing from the three-channel flow divider to the intermediate gas supply channel 22 is 1 / 20 to 18 / 20; the split ratio of the bulk gas flowing from the three-channel flow divider to the edge gas supply channel 23 is 1 / 20 to 18 / 20.

[0098] The gas supply cabinet 2 further comprises a first diaphragm valve 26; the first diaphragm valve 26 is connected with the bulk gas source and the three-channel flow divider respectively, and the first diaphragm valve 26 is used to control the on-off of the bulk gas entering the three-channel flow divider.

[0099] The gas supply cabinet 2 further comprises a plurality of third diaphragm valves 28; the first end of each of the plurality of third diaphragm valves 28 is connected with the helium gas source, and the second end of each of the plurality of third diaphragm valves 28 is connected with the central gas supply channel 21, the intermediate gas supply channel 22, the edge gas supply channel 23 and the adjustment gas supply channel 24 respectively; the third diaphragm valve 28 is used to control the on-off of the helium gas entering the central gas supply channel 21, the on-off of the helium gas entering the intermediate gas supply channel 22, the on-off of the helium gas entering the edge gas supply channel 23, and the on-off of the helium gas entering the adjustment gas supply channel 24.

[0100] The gas supply cabinet 2 further comprises a fourth diaphragm valve 29, which is connected with the adjusting gas supply source and the adjusting gas supply channel 24 respectively, and is used to control the on-off of the adjusting gas into the adjusting gas supply channel 24.

[0101] The bulk gas provided by the bulk gas supply source is precisely divided into three parts by the three-channel flow divider after mixing, one part of the bulk gas is introduced into the center gas supply channel 21, one part of the bulk gas is introduced into the middle gas supply channel 22, and the other part of the bulk gas is introduced into the edge gas supply channel 23. The specific parameters of the flow division ratio of the three-channel flow divider can be adjusted according to actual needs.

[0102] Embodiment three: as shown in FIG. 9 and FIG. 10, when the flow divider 25 is a four-channel flow divider, the first end of the four-channel flow divider is connected with the bulk gas supply source, and the second end of the four-channel flow divider is connected with the center gas supply channel 21, the middle gas supply channel 22, the edge gas supply channel 23 and the adjusting gas supply channel 24 respectively; wherein the flow division ratio of the bulk gas flowing from the four-channel flow divider to the center gas supply channel 21, the middle gas supply channel 22, the edge gas supply channel 23 and the adjusting gas supply channel 24 is M2:N2:P2:Q1, wherein the value range of M2, N2 and P2 is 1-17, and the value of Q1 is 1, that is, the flow division ratio of the bulk gas flowing from the four-channel flow divider to the center gas supply channel 21 is 1 / 20 to 17 / 20; the flow division ratio of the bulk gas flowing from the four-channel flow divider to the middle gas supply channel 22 is 1 / 20 to 17 / 20; the flow division ratio of the bulk gas flowing from the four-channel flow divider to the edge gas supply channel 23 is 1 / 20 to 17 / 20; and the flow division ratio of the bulk gas flowing from the four-channel flow divider to the adjusting gas supply channel 24 is 1 / 20.

[0103] The gas supply cabinet 2 further comprises a first diaphragm valve 26, which is connected with the bulk gas supply source and the three-channel flow divider respectively, and is used to control the on-off of the bulk gas into the three-channel flow divider.

[0104] The gas supply cabinet 2 further comprises a plurality of third diaphragm valves 28, the first end of each of the plurality of third diaphragm valves 28 is connected with the helium gas supply source, and the second end of each of the plurality of third diaphragm valves 28 is connected with the central gas supply channel 21, the intermediate gas supply channel 22, the edge gas supply channel 23 and the adjustment gas supply channel 24 respectively; the third diaphragm valve 28 is used to control the on-off of the helium gas entering the central gas supply channel 21, the passage of the helium gas entering the intermediate gas supply channel 22, the on-off of the helium gas entering the edge gas supply channel 23, and the on-off of the helium gas entering the adjustment gas supply channel 24.

[0105] The bulk gas supplied by the bulk gas supply source is precisely divided into four portions of bulk gas after mixing, one portion of bulk gas is introduced into the central gas supply channel 21, one portion of bulk gas is introduced into the intermediate gas supply channel 22, one portion of bulk gas is introduced into the edge gas supply channel 23, and one portion of bulk gas is introduced into the adjustment gas supply channel 24; the specific parameters of the split ratio of the four-channel flow divider can be adjusted according to actual needs; since the flow of the bulk gas to the adjustment gas supply channel 24 through the four-channel flow divider is small, it can be unnecessary to set an adjustment gas supply source to introduce adjustment gas into the adjustment gas supply channel 24.

[0106] It should be noted that the semiconductor processing device includes but is not limited to the above three optional embodiments; the mode that the bulk gas supply source is connected with the four gas supply channels through a flow divider can be adjusted according to actual needs; the operator can determine whether to increase or decrease the gas in any region of the workpiece 5 to be processed according to the specific etching speed in the process menu of the gas supply cabinet 2; when the etching speed in a certain region of the workpiece 5 to be processed is too slow, more reaction gas can be introduced into the region, or the reaction gas in other regions can be reduced, or part of inert gas can be introduced into other regions, etc. to realize the uniformity of the etching speed of the whole workpiece 5 to be processed, so as to realize precise control of various gas supply modes.

[0107] The above describes in detail the semiconductor processing device provided by the present application, and the principles and embodiments of the present application are described by using specific examples; the above description of the embodiments is only used to help understand the method and core idea of the present application; meanwhile, for those skilled in the art, the specific embodiments and application range can be changed according to the idea of the present application; in view of the above, the content of the specification should not be understood as a limitation of the present application.

[0108] It should be noted that each of the embodiments described in this specification has a corresponding form that is directed to the execution of commands by a computer system. However, the embodiments disclosed herein are not limited to these corresponding forms, but include both the devices and the processes disclosed herein.

[0109] It should also be noted that the herein disclosed embodiments are not limited to the details of the foregoing description, since the scope of the embodiments is defined by the claims. Furthermore, it should be noted that the term "comprising" does not exclude the presence of elements or steps other than those listed in a claim. The term "a" or "an" preceding an element does not exclude the presence of a plurality of such elements. It is further noted that the description uses the term "comprising" or "comprises" to mean that the elements listed following the term are included, but not to exclude the presence of other elements or steps. Thus, the term "comprising" should be interpreted as including the presence of one or more elements or steps that follow the term in the claims.

[0110] The above description of disclosed embodiments provides enabling concepts for practicing or using the invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and generic principles defined herein can be applied to other embodiments without departing from the spirit or scope of the invention. Thus, the present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A semiconductor processing apparatus characterized by comprising: The semiconductor processing device comprises a processing chamber and a gas supply cabinet; The processing chamber comprises a chamber cover and a chamber body, which constitute a cavity structure of the processing chamber, and a workpiece to be processed is located inside the cavity structure; A plurality of central gas inlets and a plurality of intermediate gas inlets are located at the top of the cavity structure; A plurality of edge gas inlets and a plurality of adjustment gas inlets are located on the side wall of the chamber body close to the chamber cover; The gas supply cabinet comprises a central gas supply channel, an intermediate gas supply channel, an edge gas supply channel and an adjustment gas supply channel; The central gas supply channel is connected with the central gas inlets, and the gas in the gas supply cabinet flows to the central area of the workpiece to be processed through the central gas supply channel and the central gas inlets; The intermediate gas supply channel is connected with the intermediate gas inlets, and the gas in the gas supply cabinet also flows to the intermediate area of the workpiece to be processed through the intermediate gas supply channel and the intermediate gas inlets; The edge gas supply channel is connected with the edge gas inlets, and the gas in the gas supply cabinet also flows to the edge area of the workpiece to be processed through the edge gas supply channel and the edge gas inlets; The adjustment gas supply channel is connected with the adjustment gas inlets, and the gas in the gas supply cabinet also flows to the edge area of the workpiece to be processed through the adjustment gas supply channel and the adjustment gas inlets.

2. The semiconductor processing apparatus according to claim 1, wherein The processing chamber further comprises: A medium window is located on the side of the chamber body facing the chamber cover, and the central area of the medium window has a gas jet nozzle, the gas jet nozzle comprises a central gas inlet channel penetrating through the central area of the gas jet nozzle in a first direction, and an intermediate gas inlet channel surrounding the central gas inlet channel, a plurality of the central gas inlets are located at one end of the central gas inlet channel away from the chamber cover, a plurality of the intermediate gas inlets are located at one end of the intermediate gas inlet channel away from the chamber cover and facing the side wall of the chamber body, and the first direction is perpendicular to the plane where the medium window is located; The central gas supply channel is connected with the central gas inlets through the central gas inlet channel, and the intermediate gas supply channel is connected with the intermediate gas inlets through the intermediate gas inlet channel.

3. The semiconductor processing apparatus of claim 2, wherein The processing chamber further comprises: A gas distribution ring structure is located between the chamber body and the medium window, the gas distribution ring structure comprises a plurality of edge gas inlet channels close to the side of the medium window, and a plurality of adjustment gas inlet channels away from the side of the medium window, a plurality of the edge gas inlets are located on the side of the edge gas inlet channels facing the cavity structure, and a plurality of the adjustment gas inlets are located on the side of the adjustment gas inlet channels facing the cavity structure; The edge gas supply channel is connected with the edge gas inlets through the edge gas inlet channels, and the adjustment gas supply channel is connected with the adjustment gas inlets through the adjustment gas inlet channels.

4. The semiconductor processing apparatus according to claim 2, wherein The processing chamber further comprises: A plurality of coils are located on the side of the medium window facing the chamber cover, the coils are connected with a source radio frequency power supply, and the source radio frequency power supply is used to output high frequency radio frequency power to ignite and control the plasma density.

5. The semiconductor processing apparatus of claim 1, wherein The processing chamber further comprises: A first electrode is located inside the cavity structure, and the workpiece to be processed is located on the side of the first electrode facing the cavity cover, the first electrode is connected with a bias RF power source, and the bias RF power source is used to output low-frequency RF power to Control the energy and incident angle of the plasma.

6. The semiconductor processing apparatus of claim 1, wherein The number of intermediate gas inlets is greater than or equal to 6, and the plurality of intermediate gas inlets are uniformly distributed in a circumferential direction. The number of edge gas inlets is greater than or equal to 6, and the plurality of edge gas inlets are uniformly distributed in a circumferential direction. The number of adjustment gas inlets is greater than or equal to 6, and the plurality of adjustment gas inlets are uniformly distributed in a circumferential direction.

7. The semiconductor processing apparatus of claim 1, wherein The gas supply cabinet further comprises: At least one bulk gas supply source for providing bulk gas, and the bulk gas supply source is connected with at least the center gas supply channel, the intermediate gas supply channel and the edge gas supply channel.

8. The semiconductor processing apparatus of claim 7, wherein The gas supply cabinet further comprises a flow divider; When the gas supply cabinet comprises one bulk gas supply source, the flow divider is connected with at least the bulk gas supply source, the center gas supply channel, the intermediate gas supply channel and the edge gas supply channel, respectively.

9. The semiconductor processing apparatus of claim 8, wherein, When the flow divider is a two-channel flow divider, the first end of the two-channel flow divider is connected with the bulk gas supply source, the second end of the two-channel flow divider is connected with the center gas supply channel, and the third end of the two-channel flow divider is connected with the intermediate gas supply channel and the edge gas supply channel, respectively.

10. The semiconductor processing apparatus of claim 9, wherein The gas supply cabinet further comprises a first diaphragm valve and a plurality of second diaphragm valves; The first diaphragm valve is connected with the bulk gas supply source and the two-channel flow divider, respectively, and the first diaphragm valve is used to control the on-off of the bulk gas into the two-channel flow divider; The first ends of the plurality of second diaphragm valves are connected with the two-channel flow divider, the second ends of the plurality of second diaphragm valves are connected with the intermediate gas supply channel and the edge gas supply channel, respectively, and the second diaphragm valve is used to control the on-off of the bulk gas into the intermediate gas supply channel and the on-off of the bulk gas into the edge gas supply channel.

11. The semiconductor processing apparatus of claim 9, wherein The flow ratio of the two-channel flow divider is 19:1 to 1:

19.

12. The semiconductor processing apparatus of claim 8, wherein, When the flow divider is a three-channel flow divider, the first end of the three-channel flow divider is connected with the bulk gas supply source, and the second end of the three-channel flow divider is connected with the center gas supply channel, the intermediate gas supply channel and the edge gas supply channel, respectively.

13. The semiconductor processing apparatus of claim 12, wherein The flow ratio of the bulk gas flowing from the three-channel flow divider to the center gas supply channel, the intermediate gas supply channel and the edge gas supply channel is M1:N1:P1, wherein M1, N1 and P1 are each in the range of 1-18.

14. The semiconductor processing apparatus of claim 8, wherein When the flow divider is a four-channel flow divider, the first end of the four-channel flow divider is connected with the bulk gas supply source, and the second end of the four-channel flow divider is connected with the center gas supply channel, the intermediate gas supply channel, the edge gas supply channel and the adjustment gas supply channel, respectively.

15. The semiconductor processing apparatus of claim 14, wherein, The split ratio of the bulk gas flowing to the center gas supply channel, the intermediate gas supply channel, the edge gas supply channel and the adjustment gas supply channel from the four-way splitter is M2:N2:P2:Q1, wherein the value range of M2, N2 and P2 is 1-17, and the value of Q1 is 1.

16. The semiconductor processing apparatus of claim 1, wherein The gas supply cabinet further comprises: A helium gas supply source for providing helium gas, which is connected with the center gas supply channel, the intermediate gas supply channel, the edge gas supply channel and the adjustment gas supply channel respectively.

17. The semiconductor processing apparatus of claim 16, wherein, The gas supply cabinet further comprises: A plurality of third diaphragm valves; The first end of the plurality of third diaphragm valves is connected with the helium gas supply source, and the second end of the plurality of third diaphragm valves is connected with the center gas supply channel, the intermediate gas supply channel, the edge gas supply channel and the adjustment gas supply channel respectively.

18. The semiconductor processing apparatus of claim 1, wherein, The third diaphragm valve is used to control the on-off of the helium gas entering the center gas supply channel, the on-off of the helium gas entering the intermediate gas supply channel, the on-off of the helium gas entering the edge gas supply channel, and the on-off of the helium gas entering the adjustment gas supply channel. The gas supply cabinet further comprises:

19. The semiconductor processing apparatus of claim 18, wherein, An adjustment gas supply source for providing adjustment gas, which is connected with the adjustment gas supply channel.

20. The semiconductor processing apparatus of claim 18, wherein, The adjustment gas includes O2, C4F6, CF4 or CH3F. The gas supply cabinet further comprises: A fourth diaphragm valve; The fourth diaphragm valve is connected with the adjustment gas supply source and the adjustment gas supply channel respectively, and is used to control the on-off of the adjustment gas entering the adjustment gas supply channel.

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