Solar cell module

Abstract

A solar cell module (1) is provided with a first photoelectric conversion unit (112), a coating part (12), and a sealing material (13). The first photoelectric conversion unit (12) contains a compound having a perovskite structure. The coating part (12) covers at least a portion of the first photoelectric conversion unit (112). The sealing material (13) covers the coating part (12). The sealing material (13) includes a first sealing material (131). The raw material for the first sealing material (131) has a chemical structure that generates a free acid. The coating part (12) includes a first coating layer. The first coating layer contains an inorganic substance having a barrier property against acids.

Description

solar cell module CROSS-REFERENCE TO RELATED APPLICATIONS

[0001] This application claims priority from Japanese Application No. 2024-088004 (filed May 30, 2024), the entire disclosure of which is incorporated herein by reference.

[0002] The present disclosure relates to solar cell modules.

[0003] BACKGROUND ART There is a solar cell module (hereinafter also referred to as a perovskite solar cell) that contains a compound having a perovskite structure in a photoelectric conversion section (see, for example, the description in Patent Document 1).

[0004] Furthermore, resins such as ethylene vinyl acetate (hereinafter referred to as EVA) are used as sealing materials for solar cell modules (see, for example, the description in Patent Document 2).

[0005] International Publication No. 2018 / 052032 Japanese Patent Application Laid-Open No. 2023-114567

[0006] A solar cell module is disclosed.

[0007] One aspect of the solar cell module includes a first photoelectric conversion unit, a covering unit, and a sealing material. The first photoelectric conversion unit includes a compound having a perovskite structure. The covering unit covers at least a portion of the first photoelectric conversion unit. The sealing material covers the covering unit. The sealing material includes a first sealing material. A material of the first sealing material has a chemical structure that generates free acid. The covering unit includes a first coating layer. The first coating layer includes an inorganic material that has barrier properties against acids.

[0008] FIG. 1 is a plan view showing the appearance of an example of a configuration of a first solar cell module according to a first embodiment, in which a plurality of first solar cells are located on a first substrate. FIG. 2 is a cross-sectional view schematically showing an example of a virtual cross section of a configuration in which a plurality of first solar cells are located on a first substrate at position II-II in FIG. 1 , viewed toward the +Y direction. FIG. 3 is a cross-sectional view schematically showing an example of a virtual cross section of a first solar cell module according to the first embodiment. FIG. 4 is a cross-sectional view schematically showing an example of a cross section of a covering portion and a portion of the periphery of the covering portion of a first solar cell module, and is a cross-sectional view showing region IV surrounded by a rectangular dashed line in FIG. 3. FIG. 5 is a plan view schematically showing an example of a configuration of a second solar cell of a second solar cell module according to a second embodiment. FIG. 6 is a cross-sectional view schematically showing an example of a virtual cross section of a second solar cell viewed toward the +X direction at position VI-VI in FIG. 5. FIG. 7 is a cross-sectional view schematically showing an example of a virtual cross section of a second solar cell module according to a second embodiment. FIG. 8 is a plan view schematically showing an example of a configuration of a first solar cell of a third solar cell module according to a third embodiment. FIG. 9 is a cross-sectional view schematically showing an example of a virtual cross section of the first solar cell viewed toward the +X direction at position IX-IX in FIG. 8 . FIG. 10 is a cross-sectional view schematically showing an example of a virtual cross section of a third solar cell module according to the third embodiment. FIG. 11 is a cross-sectional view schematically showing an example of a cross section of a covering portion and a portion around the covering portion of the third solar cell module. FIG. 12 is a cross-sectional view schematically showing a virtual cross section of the first solar cell and covering portion of another first example of the third solar cell module according to the third embodiment. FIG. 13 is a cross-sectional view schematically showing a virtual cross section of the first solar cell and covering portion of another second example of the third solar cell module according to the third embodiment.

[0009] There are solar cell modules (perovskite solar cells) that contain a compound having a perovskite structure in the photoelectric conversion section, and resins such as ethylene vinyl acetate (EVA) are used as sealing materials for solar cell modules.

[0010] There is room for improvement in this perovskite solar cell in terms of reducing the deterioration of the photoelectric conversion section.

[0011] Therefore, the inventors of the present disclosure have created a technology that can reduce the deterioration of the photoelectric conversion unit in perovskite solar cells.

[0012] In this regard, various embodiments and examples will be described below with reference to the drawings. In the drawings, parts having the same or similar configurations and functions are designated by the same reference numerals. Duplicate descriptions of parts having the same or similar configurations and functions will be omitted in the following description. The drawings are schematic.

[0013] An XYZ coordinate system is illustrated in each of FIGS. 1 to 10, 12, and 13. In this XYZ coordinate system, the +Z direction and the −Z direction are each perpendicular to the XY plane. Note that, hereinafter, the +Z direction and the −Z direction may not be particularly distinguished from each other and may be collectively referred to as the Z direction. The +Z direction side may be referred to as the upper side, and the −Z direction side may be referred to as the lower side. In this XYZ coordinate system, the +X direction and the −X direction are each perpendicular to the YZ plane. Note that, hereinafter, the +X direction and the −X direction may not be particularly distinguished from each other and may be collectively referred to as the X direction. In this XYZ coordinate system, the +Y direction and the −Y direction are each perpendicular to the XZ plane. In the following description, the +Y direction and the −Y direction may not be particularly distinguished from each other, and the +Y direction and the −Y direction may be collectively referred to as the Y direction.

[0014] In the following description, the length of an object in the Z direction may be referred to as the Z-direction thickness, and the length of an object in the X direction may be referred to as the X-direction thickness.

[0015] In the following description, an example is given in which light L1 is incident on a solar cell or a solar cell module from the top to the bottom. In each of Figures 2, 3, 6, 7, 9, 10, 12, and 13, the direction in which light L1 travels is indicated by a thin, two-dot chain arrow. The upper side of the solar cell module is sometimes referred to as the light-receiving surface side.

[0016] 1. First Embodiment The first embodiment relates to a solar cell module having a photoelectric conversion unit containing a compound having a perovskite structure.

[0017] FIG. 1 shows the appearance of an example of a configuration in which a plurality of solar cells (also referred to as first solar cell cells) 11 are located on a first substrate 10 of a solar cell module (also referred to as first solar cell module) 1 according to the first embodiment. FIG. 2 schematically shows an example of a virtual cross section of a configuration in which a plurality of first solar cells 11 are located on the first substrate 10 at position II-II in FIG. 1 , viewed in the +Y direction. FIG. 3 schematically shows an example of a virtual cross section of the first solar cell module 1 according to the first embodiment. FIG. 4 schematically shows an example of a cross section of a covering portion 12 of the first solar cell module 1 and a portion around this covering portion 12. The first solar cell module 1 includes a first solar cell 11.

[0018] 2, each of the plurality of components in the first solar cell 11 stacked on the first base material 10 may exist along the XY plane. In the first solar cell 11, two adjacent components among the plurality of components may be in contact with each other over their entire surfaces, may be in contact with each other over substantially their entire surfaces, or may be in contact with each other only partially.

[0019] The first solar cell 11 has a first electrode portion 111, a first photoelectric conversion portion 112, and a second electrode portion 113. In other words, the first solar cell module 1 includes the first electrode portion 111, the first photoelectric conversion portion 112, and the second electrode portion 113.

[0020] <1-1-1. First Base Material 10> The first base material 10 may be translucent. More specifically, the first base material 10 may be translucent to light in a specific wavelength range. This allows, for example, light irradiated onto the first base material 10 from outside the first solar cell module 1 to pass through the first base material 10 and reach the first photoelectric conversion unit 112. Here, for example, if the specific wavelength range includes a visible light wavelength range of approximately 400 nanometers (nm) to 700 nm, in which the irradiation intensity is relatively high compared to other wavelength ranges in the spectral distribution of the irradiation intensity of sunlight, the photoelectric conversion efficiency of the first solar cell module 1 can be improved.

[0021] The first base material 10 may have insulating properties. The first base material 10 may have resistance to ultraviolet light. The first base material 10 may have barrier properties against water molecules. The barrier properties against water molecules are a property that makes it difficult for water molecules to pass through.

[0022] The first substrate 10 has, for example, a surface opposite the first solar cell 11 (also referred to as the first surface) and a surface facing the first solar cell 11 (also referred to as the second surface). In FIGS. 2 and 3 , the first surface faces the +Z direction, and the second surface faces the −Z direction. The first substrate 10 may be plate-shaped, sheet-shaped, or film-shaped. In other words, the first surface and the second surface may each be located along the XY plane. The surface of the first substrate 10 may have an uneven surface or a coating layer that reduces light reflection. The material of the first substrate 10 may be, for example, glass, acrylic resin, or polycarbonate resin, or other materials.

[0023] The thickness (e.g., thickness in the Z direction) of the first substrate 10 may be, for example, about 0.01 millimeters (mm) to 5 mm.

[0024] <1-1-2. First electrode portion 111> The first electrode portion 111 is located on the second surface of the first substrate 10. The first electrode portion 111 may be located along the second surface of the first substrate 10. The first electrode portion 111 may have the shape of a layer or a film. In other words, the first electrode portion 111 may be located along the XY plane. The first electrode portion 111 can collect carriers generated by photoelectric conversion in the first photoelectric conversion portion 112. The material of the first electrode portion 111 may be, for example, silver, gold, copper, titanium, indium, or tin, or other materials.

[0025] Furthermore, the material of the first electrode unit 111 may be, for example, a transparent conductive oxide (TCO) that is translucent to light in a specific wavelength range.

[0026] Examples of transparent conductive oxides (TCOs) include indium tin oxide (ITO), aluminum-doped zinc oxide (AZO), boron-doped zinc oxide (BZO), gallium-doped zinc oxide (GZO), fluorine-doped tin oxide (FTO), antimony-doped tin oxide (ATO), titanium-doped indium oxide (ITiO), indium zinc oxide (IZO), indium gallium zinc oxide (IGZO), and tantalum-doped tin oxide (SnO ２ :Ta), niobium-doped tin oxide (SnO ２ : Nb), tungsten-doped tin oxide (SnO ２ : W), molybdenum-doped tin oxide (SnO ２ :Mo), fluorine-doped tin oxide (SnO ２The dopant may include one element selected from the group consisting of indium, silicon, germanium, titanium, copper, antimony, niobium, fluorine, tantalum, tungsten, molybdenum, bromine, iodine, and chlorine, or two or more elements may be used in combination.

[0027] The thickness (for example, thickness in the Z direction) of the first electrode portion 111 may be, for example, about 10 nm to 1000 nm.

[0028] <1-1-3. First photoelectric conversion section 112> The first photoelectric conversion section 112 may have, for example, a first carrier transport layer 1121, a first photoelectric conversion layer 1122, and a second carrier transport layer 1123. In other words, the first photoelectric conversion section 112 may have a first photoelectric conversion layer 1122.

[0029] 2, the first photoelectric conversion section 112 may have a configuration in which a first carrier transport layer 1121, a first photoelectric conversion layer 1122, and a second carrier transport layer 1123 are stacked in this order. The first carrier transport layer 1121, the first photoelectric conversion layer 1122, and the second carrier transport layer 1123 may be stacked in this order along the −Z direction.

[0030] The first carrier transport layer 1121 is located on the surface of the first electrode unit 111 opposite to the first substrate 10. The first carrier transport layer 1121 may be a layer located along the surface of the first electrode unit 111 opposite to the first substrate 10.

[0031] The first carrier transport layer 1121 is an electron transport layer or a hole transport layer. When the first carrier transport layer 1121 is an electron transport layer, the electron transport layer has a role of transferring electrons generated in the first photoelectric conversion layer 1122 to the first electrode unit 111. When the first carrier transport layer 1121 is a hole transport layer, the hole transport layer has a role of transferring holes generated in the first photoelectric conversion layer 1122 to the first electrode unit 111.

[0032] When the first carrier transport layer 1121 is an electron transport layer, the second carrier transport layer 1123 is a hole transport layer. When the first carrier transport layer 1121 is a hole transport layer, the second carrier transport layer 1123 is an electron transport layer.

[0033] The material of the electron transport layer may be, for example, titanium oxide, zinc oxide, indium oxide, tin oxide, or aluminum oxide, or other materials. ６１ -Butyric acid methyl ester ([6,6]-Phenyl-C 61 -Butyric Acid Methyl Ester (PCBM) may be applied.

[0034] Examples of materials for the hole transport layer include poly(3-hexylthiophene-2,5-diyl) (P3HT), poly(3,4-ethylenedioxythiophene) (PEDOT), 2,2',7,7'-tetrakis(N,N-di-4-methoxyphenylamino)-9,9'-spirobifluorene (2,2',7,7'-Tetrakis-(N,N-di-4-methoxyphenylamino)-9,9'-spir Poly[N,N'-bis(4-butylphenyl)-N,N'-bis(phenyl)-benzidine] (Poly-TPD), Poly[bis[(4-phenyl)(2,4,6-trimethylphenyl)amine] (Poly-PTAA), or other materials may be used.

[0035] The thickness (eg, Z-direction thickness) of the first carrier transport layer 1121 may be, for example, about 50 nm to 200 nm.

[0036] The first photoelectric conversion layer 1122 is located on the surface of the first carrier transport layer 1121 opposite to the first substrate 10. The first photoelectric conversion layer 1122 may be a layer located along the surface of the first carrier transport layer 1121 opposite to the first electrode portion 111.

[0037] The first photoelectric conversion layer 1122 is a layer in which light energy is converted into electrical energy. Specifically, in the first photoelectric conversion layer 1122, light is absorbed and electrons and holes are generated, thereby generating photovoltaic power.

[0038] The first photoelectric conversion layer 1122 contains a compound having a perovskite structure. The perovskite structure has a basic unit cell of a tetragonal system. This basic unit cell has organic ions A located at each vertex, metal ions B located at the body center, and halide ions X located at each face center. The composition of the compound having the perovskite structure is expressed by the formula ABX ３ It is expressed as:

[0039] Formula ABX ３ In the formula (I), the organic ion A may be one or more of methylamine, ethylamine, propylamine, butylamine, pentylamine, hexylamine, dimethylamine, diethylamine, dipropylamine, dibutylamine, dipentylamine, dihexylamine, trimethylamine, triethylamine, tripropylamine, tributylamine, tripentylamine, trihexylamine, ethylmethylamine, methylpropylamine, butylmethylamine, methylpentylamine, hexylmethylamine, ethylpropylamine, ethylbutylamine, imidazole, azole, pyrrole, aziridine, azirine, azetidine, azeto, azole, imidazoline, carbazole, formamidinium, and guanidinium. Note that the organic ion A may be an organic ion other than those listed above.

[0040] Also, the formula ABX ３In the formula (I), the metal ion B is, for example, one or more metal ions selected from the group consisting of lead, tin, zinc, titanium, antimony, bismuth, nickel, iron, cobalt, silver, copper, gallium, germanium, magnesium, calcium, indium, aluminum, manganese, chromium, molybdenum, and europium. Note that the metal ion B may be a metal ion other than the metal ions listed above.

[0041] Also, the formula ABX ３ In the formula (1), the halide ion X is, for example, one or more halide ions selected from the group consisting of chlorine, bromine, and iodine. Note that the halide ion X may be a halide ion other than the halide ions listed above.

[0042] The thickness (for example, thickness in the Z direction) of the first photoelectric conversion layer 1122 may be, for example, about 100 nm (nanometers) to 2000 nm.

[0043] The second carrier transport layer 1123 is located on the surface of the first photoelectric conversion layer 1122 opposite to the first carrier transport layer 1121. The second carrier transport layer 1123 may be a layer located along the surface of the first photoelectric conversion layer 1122 opposite to the first carrier transport layer 1121.

[0044] The second carrier transport layer 1123 is an electron transport layer or a hole transport layer. When the second carrier transport layer 1123 is an electron transport layer, this electron transport layer can transfer electrons generated in the first photoelectric conversion layer 1122 to the second electrode unit 113. When the second carrier transport layer 1123 is a hole transport layer, this hole transport layer can transfer holes generated in the first photoelectric conversion layer 1122 to the second electrode unit 113.

[0045] The electron transport layer may be made of, for example, titanium oxide, zinc oxide, indium oxide, tin oxide, or aluminum oxide, or may be made of other materials such as PCBM.

[0046] The hole transport layer may be made of, for example, P3HT, PEDOT, Spiro-OMeTAD, Poly-TPD, or PTAA, or may be made of other materials.

[0047] The thickness (eg, Z-direction thickness) of the second carrier transport layer 1123 may be, for example, about 50 nm to 200 nm.

[0048] <1-1-4. Second electrode unit 113> The second electrode unit 113 is located on the surface of the first photoelectric conversion unit 112 opposite to the first electrode unit 111. The second electrode unit 113 may be located along the surface of the first photoelectric conversion unit 112 opposite to the first electrode unit 111. The second electrode unit 113 may have the shape of a layer or a film. In other words, the second electrode unit 113 may be located along the XY plane. From another perspective, at least a portion of the first photoelectric conversion unit 112 may be located between the first electrode unit 111 and the second electrode unit 113. The second electrode unit 113 can collect carriers generated by photoelectric conversion in the first photoelectric conversion unit 112.

[0049] The material of the second electrode portion 113 may be, for example, silver, gold, copper, titanium, indium, or tin, or other materials.

[0050] The second electrode unit 113 may be made of a material such as a transparent conductive oxide (TCO) that is translucent to light in a specific wavelength range.

[0051] The thickness (for example, thickness in the Z direction) of the second electrode portion 113 may be, for example, about 10 nm to 1000 nm.

[0052] <1-2. First Solar Cell Module 1> As shown in FIG. 3 , the first solar cell module 1 may include a first base material 10, a first solar cell 11, a covering portion 12, a sealing material 13, and a second base material 14. In other words, the first solar cell module 1 includes a first photoelectric conversion portion 112, a covering portion 12, and a sealing material 13. The first solar cell module 1 may include one or more first solar cells 11. The one or more first solar cells 11 may be one first solar cell 11, or may be any number of first solar cells 11 equal to or greater than two. In the example of FIG. 3 , the first solar cell module 1 includes four first solar cells 11. In the first solar cell module 1, any number of first solar cells 11 equal to or greater than two may be electrically connected in series. In the example of FIG. 3 , the four first solar cells 11 are electrically connected in series.

[0053] The first solar cell 11 is located between the first substrate 10 and the second substrate 14. At least a portion of the first solar cell 11 is covered with a covering portion 12. For example, at least a portion of the first photoelectric conversion portion 112 of the first solar cell 11 is covered with the covering portion 12. In the example of FIG. 3 , the first solar cell 11 is covered with the covering portion 12 from the opposite side of the first substrate 10. The covering portion 12 is covered with a sealing material 13. As a result, the covering portion 12 is sealed with the sealing material 13. In the example of FIG. 3 , the covering portion 12 is covered with the sealing material 13 from the opposite side of the first substrate 10. Here, for example, a solid sealing material 13 is filled between the first substrate 10 and the second substrate 14. As a result, the sealing material 13 seals one or more first solar cells 11 and covering portions 12. In the example of FIG. 3 , the sealing material 13 seals four first solar cells 11 and covering portions 12. Here, the form in which the encapsulant 13 encapsulates an object may be a form in which the encapsulant 13 covers the object together with one or more other members, or a form in which the encapsulant 13 covers the object alone. The one or more other members may be, for example, a first substrate 10 or a second substrate 14.

[0054] <1-2-1. Covering portion 12> The covering portion 12 covers at least a portion of the first solar cell 11. From another perspective, the covering portion 12 covers at least a portion of the first photoelectric conversion portion 112. In the example of Fig. 3, the covering portion 12 covers the first solar cell 11 from the side opposite to the first base material 10. The covering portion 12 may be located between the first solar cell 11 and the sealing material 13.

[0055] As shown in FIG. 4 , the covering unit 12 includes a first covering layer 121. The covering unit 12 may include a first intermediate layer 122 or a second covering layer 123 in addition to the first covering layer 121. In other words, the covering unit 12 may be, for example, a layer composed of the first covering layer 121. The covering unit 12 may have a configuration in which the first covering layer 121 and the first intermediate layer 122 are stacked, for example. The order in which the first covering layer 121 and the first intermediate layer 122 are stacked from the first solar cell 11 side may be set as appropriate. The covering unit 12 may have a configuration in which the first covering layer 121 and the second covering layer 123 are stacked, for example. The order in which the first covering layer 121 and the second covering layer 123 are stacked from the first solar cell 11 side may be set as appropriate. The covering portion 12 may have a configuration in which, for example, a first covering layer 121, a first intermediate layer 122, and a second covering layer 123 are stacked. The order in which the first covering layer 121, the first intermediate layer 122, and the second covering layer 123 are stacked from the first solar cell 11 side may be set as appropriate.

[0056] The first coating layer 121 is a layer containing an inorganic material having an acid barrier property. The acid barrier property is a property that makes it difficult for an acid to pass through. An acid can accept and share an electron pair with a certain substance. For example, an acid can donate a proton to a certain substance. The first coating layer 121 may be a layer made of a dense inorganic material (also referred to as an inorganic material layer).

[0057] As described above, the first photoelectric conversion unit 112 includes a compound having a perovskite structure. Therefore, the first photoelectric conversion unit 112 may be deteriorated by acid. More specifically, the first photoelectric conversion layer 1122 of the first photoelectric conversion unit 112 includes a compound having a perovskite structure. Therefore, the first photoelectric conversion layer 1122 may be deteriorated by acid. Here, deterioration in the first photoelectric conversion unit 112 and the first photoelectric conversion layer 1122 includes deterioration in appearance and / or characteristics. The deterioration in appearance of the first photoelectric conversion unit 112 may include, for example, the transparency of a portion of the first photoelectric conversion unit 112 and the occurrence of pinholes in a portion of the first photoelectric conversion unit 112. The deterioration in appearance of the first photoelectric conversion layer 1122 may include, for example, the transparency of the first photoelectric conversion layer 1122 and the occurrence of pinholes in the first photoelectric conversion layer 1122. The characteristic deterioration of the first photoelectric conversion unit 112 may include, for example, a decrease in photoelectric conversion efficiency in the first photoelectric conversion unit 112. The characteristic deterioration of the first photoelectric conversion layer 1122 may include, for example, a decrease in photoelectric conversion efficiency in the first photoelectric conversion layer 1122.

[0058] Here, as will be described later, it is assumed that the sealing material 13 includes a first sealing material 131 having a chemical structure that generates a free acid. For example, when the first sealing material 131 includes ethylene vinyl acetate, acetic acid as a free acid can be generated by hydrolysis caused by a reaction between water molecules and vinyl acetate.

[0059] In contrast, the first coating layer 121 is a layer containing an inorganic substance that has barrier properties against acids. Therefore, if the coating section 12 including the first coating layer 121 is present between the first sealing material 131 and the first photoelectric conversion section 112 (more specifically, the first photoelectric conversion layer 1122), the penetration of free acid generated in the first sealing material 131 into the first photoelectric conversion section 112 (more specifically, the first photoelectric conversion layer 1122) can be reduced. This can reduce deterioration of the first photoelectric conversion section 112 (more specifically, the first photoelectric conversion layer 1122).

[0060] The material of the first coating layer 121 may be, for example, silicon oxide or aluminum oxide, or another material. In other words, the first coating layer 121 may include silicon oxide or aluminum oxide.

[0061] The first covering layer 121 may be translucent to light in a specific wavelength range. This allows, for example, light irradiated onto the first covering layer 121 from the side opposite the first photoelectric conversion unit 112 to pass through the first covering layer 121 and reach the first photoelectric conversion unit 112. Here, for example, if the specific wavelength range includes a visible light wavelength range of about 400 nm to 700 nm, in which the irradiation intensity is relatively high compared to other wavelength ranges in the spectral distribution of the irradiation intensity of sunlight, the photoelectric conversion efficiency of the first solar cell module 1 can be improved.

[0062] An insulator may be used as the material of the first covering layer 121. In this case, the first covering layer 121 has insulating properties. This can reduce, for example, the occurrence of leakage current flowing between the first electrode unit 111 and the second electrode unit 113. The first covering layer 121 may have barrier properties against water molecules. In this case, for example, deterioration of the first photoelectric conversion unit 112 (more specifically, the first photoelectric conversion layer 1122) due to contact with water molecules entering from the side surface of the first solar cell module 1 can be reduced.

[0063] As described above, the covering unit 12 may include a first intermediate layer 122 in addition to the first covering layer 121. In this case, the first intermediate layer 122 may be located, for example, between the first solar cell 11 and the first covering layer 121. In other words, the first intermediate layer 122 may be located, for example, between the first photoelectric conversion unit 112 and the first covering layer 121. The positions of the first covering layer 121 and the first intermediate layer 122 may be interchanged. In other words, the first covering layer 121 may be located between the first photoelectric conversion unit 112 and the first intermediate layer 122. Here, for example, if the first intermediate layer 122 has barrier properties against water molecules, deterioration of the first photoelectric conversion unit 112 (more specifically, the first photoelectric conversion layer 1122) due to contact with water molecules entering from the side surface of the first solar cell module 1, for example, can be reduced.

[0064] The material of the first intermediate layer 122 may be zinc oxide or tin oxide. In other words, the first intermediate layer 122 may contain zinc oxide or tin oxide. This allows the first intermediate layer 122 to have a barrier property against water molecules. Alternatively, the material of the first intermediate layer 122 may be any other material that has a barrier property against water molecules.

[0065] The first intermediate layer 122 may be translucent to light in a specific wavelength range. This allows, for example, light irradiated onto the first intermediate layer 122 from the side opposite the first photoelectric conversion unit 112 to pass through the first intermediate layer 122 and reach the first photoelectric conversion unit 112. Here, for example, if the specific wavelength range includes a visible light wavelength range of about 400 nm to 700 nm, in which the irradiation intensity is relatively high compared to other wavelength ranges in the spectral distribution of the irradiation intensity of sunlight, the photoelectric conversion efficiency of the first solar cell module 1 can be improved.

[0066] An insulator may be used as the material of the first intermediate layer 122. In this case, the first intermediate layer 122 has insulating properties. This can reduce, for example, the occurrence of leakage current flowing between the first electrode unit 111 and the second electrode unit 113.

[0067] As described above, the coating portion 12 may include the second coating layer 123 in addition to the first coating layer 121. Furthermore, the coating portion 12 may include the second coating layer 123 in addition to the first coating layer 121 and the first intermediate layer 122. The second coating layer 123 may be located, for example, between the first coating layer 121 and the sealant 13. The second coating layer 123 may include a compound having a polyolefin. In other words, the second coating layer 123 may include a polyolefin. In this case, the polyolefin has moisture-proof and chemical-resistant properties. Therefore, the second coating layer 123 is less permeable to acids and water molecules. Thereby, the presence of the second covering layer 123 can reduce the penetration of free acid generated in the first sealing material 131 into the first photoelectric conversion unit 112 (more specifically, the first photoelectric conversion layer 1122), and can also reduce the penetration of water molecules penetrating from the side surface of the first solar cell module 1, etc., into the first photoelectric conversion unit 112 (more specifically, the first photoelectric conversion layer 1122). As a result, deterioration of the first photoelectric conversion unit 112 (more specifically, the first photoelectric conversion layer 1122) can be reduced.

[0068] The second covering layer 123 may be translucent to light in a specific wavelength range. This allows, for example, light irradiated onto the second covering layer 123 from the side opposite the first photoelectric conversion unit 112 to pass through the second covering layer 123 and reach the first photoelectric conversion unit 112. Here, for example, if the specific wavelength range includes a visible light wavelength range of about 400 nm to 700 nm, in which the irradiation intensity is relatively high compared to other wavelength ranges in the spectral distribution of the irradiation intensity of sunlight, the photoelectric conversion efficiency of the first solar cell module 1 can be improved.

[0069] An insulator may be used as the material of the second covering layer 123. In this case, the second covering layer 123 has insulating properties. This can reduce the occurrence of leakage current flowing between the first electrode portion 111 and the second electrode portion 113, for example.

[0070] <1-2-2. Sealant 13> The sealant 13 includes a first sealant 131 having a chemical structure that generates a free acid. In other words, the first sealant 131 has a chemical structure that generates a free acid. Examples of the material for the first sealant 131 include resins containing ethylene vinyl acetate, such as ethylene vinyl acetate copolymer (EVA) or ethylene / vinyl acetate / triallyl isocyanurate-crosslinked terpolymer (EVAT). In other words, the first sealant 131 may contain ethylene vinyl acetate. Examples of the material for the first sealant 131 include resins containing ethylene vinyl acetate other than EVA and EVAT. Furthermore, examples of the material for the first sealant 131 include polyvinyl acetal, such as polyvinyl butyral (PVB), or acid-modified resins. Examples of acid-modified resins include modified polyolefin resins that can be formed by graft-modifying resins such as polyolefins with acids. Examples of acids that can be used for graft-modifying acid-modified resins include acrylic acid, methacrylic acid, maleic acid, fumaric acid, itaconic acid, maleic anhydride, himic anhydride, itaconic anhydride, and citraconic anhydride. A free acid is, for example, an acid that is not bonded to a base. A free acid is, for example, an acid that can form a solvate in a solution but is not bonded to anything other than the solvent. For example, chemical structures that generate free acids in EVA and PVB include acetoxy groups. Resins containing acetoxy groups can generate acetic acid, a free acid, through thermal decomposition and hydrolysis. In other words, if the first sealing material 131 contains ethylene vinyl acetate, hydrolysis due to the reaction between water molecules and the ethylene vinyl acetate can generate acetic acid. The first sealing material 131 may be composed of, for example, two or more materials.

[0071] The sealing material 13 (more specifically, the first sealing material 131) may be translucent to light in a specific wavelength range. This allows, for example, light irradiated onto the sealing material 13 (more specifically, the first sealing material 131) from the side opposite the first photoelectric conversion section 112 to pass through the sealing material 13 (more specifically, the first sealing material 131) and reach the first photoelectric conversion section 112. Here, for example, if the specific wavelength range includes a visible light wavelength range of about 400 nm to 700 nm, in which the irradiation intensity is relatively high compared to other wavelength ranges in the spectral distribution of the irradiation intensity of sunlight, the photoelectric conversion efficiency of the first solar cell module 1 can be improved.

[0072] The first sealing material 131 may have insulating properties, which can reduce the occurrence of leakage current flowing between two or more parts among the first solar cell 11, various wirings (not shown), and the outside of the first solar cell module 1. The various wirings may be, for example, metal wirings for extracting electricity from the first solar cell 11 to the outside of the first solar cell module 1.

[0073] The sealing material 13 (more specifically, the first sealing material 131) may contain an acid acceptor that captures acid. This may reduce deterioration of the first photoelectric conversion section 112 (more specifically, the first photoelectric conversion layer 1122). The acid acceptor may contain at least magnesium hydroxide as a material that captures acid. Note that the acid acceptor may also contain a material other than magnesium hydroxide as a material that captures hydroxide.

[0074] <1-2-3. Second Substrate 14> The second substrate 14 may be translucent to light in a specific wavelength range. The second substrate 14 may have barrier properties against water molecules. The second substrate 14 may include a reflective material that reflects light in a specific wavelength range. The second substrate 14 having a reflective material may be a front-surface mirror in which the reflective material is located on the side of the first solar cell 11 (more specifically, the first photoelectric conversion section 112), or a back-surface mirror in which the reflective material is located on the side opposite the first solar cell 11 (more specifically, the first photoelectric conversion section 112). The reflective material may be a metal layer with metallic luster. Examples of materials that can be used for the second substrate 14 include resins such as polyethylene terephthalate (PET), polyethylene (PE), olefin-based resins, fluorine-containing resins, and silicone resins, glass, polycarbonate, and other materials. The second substrate 14 may be in the form of a plate, a sheet, or a film. The second base material 14 may not be present.

[0075] Here, for example, the covering unit 12 does not have to cover the second electrode unit 113. In other words, for example, the covering unit 12 may cover the portion of the first photoelectric conversion unit 112 that is not covered by the second electrode unit 113 from the opposite side to the first substrate 10. Note that, for example, if the covering unit 12 covers the second electrode unit 113, penetration of acid and / or moisture into the first photoelectric conversion unit 112 through the gap between the covering unit 12 and the second electrode unit 113 can be reduced.

[0076] <1-3. Summary of First Embodiment> As described above, the first solar cell module 1 according to the first embodiment includes a first photoelectric conversion section 112 containing a compound having a perovskite structure, a covering section 12 covering at least a portion of the first photoelectric conversion section 112, and a sealing material 13 covering the covering section 12. The sealing material 13 includes a first sealing material 131 composed of a material having a chemical structure that generates a free acid. The covering section 12 includes a first coating layer 121 containing an inorganic substance that has barrier properties against acids. Here, the presence of the covering section 12 including the first coating layer 121 between the first sealing material 131 and the first photoelectric conversion section 112 can reduce the penetration of free acids generated in the first sealing material 131 into the first photoelectric conversion section 112. This can reduce deterioration of the first photoelectric conversion section 112.

[0077] 2. Second Embodiment The second embodiment relates to a tandem solar cell module. In the tandem solar cell module of the second embodiment, two photoelectric conversion units perform photoelectric conversion of light in different wavelength ranges. This allows light in a wide wavelength range to be effectively utilized, thereby increasing the conversion efficiency of the solar cell module.

[0078] Fig. 5 schematically shows an example of the configuration of a solar cell (also referred to as a second solar cell) 20 different from the first solar cell 11 in a solar cell module (also referred to as a second solar cell module) 2 according to the second embodiment. Fig. 6 schematically shows an example of a virtual cross section of the second solar cell 20 viewed toward the +X direction at position VI-VI in Fig. 5. Fig. 7 schematically shows an example of a virtual cross section of the second solar cell module 2 according to the second embodiment.

[0079] The second solar cell module 2 according to the second embodiment has a configuration based on the first solar cell module 1 according to the first embodiment, with one or more second solar cells 20 added. In other words, the second solar cell module 2 according to the second embodiment includes a second photoelectric conversion unit 21 in addition to the first photoelectric conversion unit 112. More specifically, the second photoelectric conversion unit 21 has a second photoelectric conversion layer 211. This second photoelectric conversion layer 211 has a band gap different from that of the first photoelectric conversion layer 1122 of the first photoelectric conversion unit 112. Below, with reference to FIGS. 5 to 7 , the second solar cell module 2 according to the second embodiment will be described, focusing on the configuration that differs from the first solar cell module 1 according to the first embodiment.

[0080] 6, each of the plurality of components in the second solar cell 20 may exist along the XY plane. In the second solar cell 20, two adjacent components among the plurality of components may be in contact with each other over their entire surfaces, may be in contact with each other over substantially their entire surfaces, or may be in contact with each other only partially.

[0081] As shown in FIG. 6 , the second solar cell 20 has a second photoelectric conversion portion 21 , a first collector electrode portion 22 , and a second collector electrode portion 23 .

[0082] The second solar cell 20 may have a configuration in which the first collector 22, the second photoelectric conversion unit 21, and the second collector 23 are stacked in this order. The first collector 22, the second photoelectric conversion unit 21, and the second collector 23 may be stacked in this order along the −Z direction.

[0083] <2-1-1. Second photoelectric conversion section 21> The second photoelectric conversion section 21 may have, for example, a second photoelectric conversion layer 211, a first intrinsic semiconductor layer 212, a second intrinsic semiconductor layer 213, a first conductivity type semiconductor layer 214, a second conductivity type semiconductor layer 215, a first transparent electrode layer 216, and a second transparent electrode layer 217.

[0084] The second photoelectric conversion layer 211 of the second photoelectric conversion unit 21 has a band gap different from that of the first photoelectric conversion layer 1122 of the first photoelectric conversion unit 112. This allows the second solar cell module 2 to absorb a wider wavelength range of light than the first solar cell module 1 described above. Here, the band gap of the second photoelectric conversion layer 211 of the second photoelectric conversion unit 21 may be smaller than the band gap of the first photoelectric conversion layer 1122 of the first photoelectric conversion unit 112. In this case, light energy higher than the light energy absorbed by the second photoelectric conversion unit 21 and converted to electrical energy can be absorbed by the first photoelectric conversion unit 112 and converted to electrical energy. In other words, the conversion of light energy higher than the light energy absorbed by the second photoelectric conversion unit 21 and converted to electrical energy into thermal energy can be reduced. This allows the second solar cell module 2 to have improved photoelectric conversion efficiency.

[0085] The second photoelectric conversion layer 211 is a layer in which light energy is converted into electrical energy. Specifically, in the second photoelectric conversion layer 211, light is absorbed, and electrons and holes are generated as carriers, thereby generating photovoltaic power. The material of the second photoelectric conversion layer 211 may be, for example, an n-type crystalline semiconductor substrate (also referred to as an n-type crystalline semiconductor substrate), or may be another material. The n-type crystalline semiconductor substrate may be a single crystal or a polycrystalline body. The thickness (e.g., Z-direction thickness) of the second photoelectric conversion layer 211 may be, for example, approximately 50 μm to 200 μm.

[0086] The first intrinsic semiconductor layer 212 is located above the second photoelectric conversion layer 211. In other words, the first intrinsic semiconductor layer 212 is located on the surface of the second photoelectric conversion layer 211 facing the first substrate 10. The first intrinsic semiconductor layer 212 serves to reduce recombination of carriers generated in the second photoelectric conversion layer 211 at the surface of the second photoelectric conversion layer 211. The material of the first intrinsic semiconductor layer 212 may be, for example, i-type amorphous silicon (also referred to as i-type amorphous silicon), or other materials. The i-type amorphous silicon may be amorphous silicon (also referred to as amorphous silicon) that is not intentionally doped with impurities. The first intrinsic semiconductor layer 212 may be, for example, a thin film of i-type amorphous silicon. The thickness (e.g., Z-direction thickness) of the first intrinsic semiconductor layer 212 may be, for example, approximately 0.5 nm to 15 nm.

[0087] The second intrinsic semiconductor layer 213 is located below the second photoelectric conversion layer 211. In other words, the second intrinsic semiconductor layer 213 is located on the surface of the second photoelectric conversion layer 211 opposite to the first intrinsic semiconductor layer 212. From another perspective, the second intrinsic semiconductor layer 213 is located on the surface of the second photoelectric conversion layer 211 opposite to the first substrate 10. The second intrinsic semiconductor layer 213 serves to reduce recombination of carriers generated in the second photoelectric conversion layer 211 at the surface of the second photoelectric conversion layer 211. The material of the second intrinsic semiconductor layer 213 may be, for example, i-type amorphous silicon, or another material. The second intrinsic semiconductor layer 213 may be, for example, a thin film of i-type amorphous silicon. The thickness (e.g., Z-direction thickness) of the second intrinsic semiconductor layer 213 may be, for example, approximately 0.5 nm to 15 nm.

[0088] The first conductivity type semiconductor layer 214 is located above the first intrinsic semiconductor layer 212. In other words, the first conductivity type semiconductor layer 214 is located on the opposite side of the first intrinsic semiconductor layer 212 from the second photoelectric conversion layer 211. From another perspective, the first conductivity type semiconductor layer 214 is located on the first substrate 10 side of the first intrinsic semiconductor layer 212. The first conductivity type semiconductor layer 214 is an electron transport layer or a hole transport layer. When the first conductivity type semiconductor layer 214 is an electron transport layer, the electron transport layer serves to transfer electrons generated in the second photoelectric conversion layer 211 to the first transparent electrode layer 216. When the first conductivity type semiconductor layer 214 is a hole transport layer, the hole transport layer serves to transfer holes generated in the second photoelectric conversion layer 211 to the first transparent electrode layer 216. Here, the material of the electron transport layer may be, for example, n-type amorphous silicon (also referred to as n-type amorphous silicon), or other materials. The first conductivity type semiconductor layer 214 may be, for example, a thin film of n-type amorphous silicon. The material of the hole transport layer may be, for example, p-type amorphous silicon (also referred to as p-type amorphous silicon), or other materials. The first conductivity type semiconductor layer 214 may be, for example, a thin film of p-type amorphous silicon. The thickness (e.g., Z-direction thickness) of the first conductivity type semiconductor layer 214 may be, for example, approximately 1 nm to 10 nm.

[0089] When the first conductive type semiconductor layer 214 is an electron transport layer, the second conductive type semiconductor layer 215 is a hole transport layer. When the first conductive type semiconductor layer 214 is a hole transport layer, the second conductive type semiconductor layer 215 is an electron transport layer.

[0090] The second conductivity type semiconductor layer 215 is located below the second intrinsic semiconductor layer 213. In other words, the second conductivity type semiconductor layer 215 is located on the opposite side of the second intrinsic semiconductor layer 213 from the second photoelectric conversion layer 211. From another perspective, the second conductivity type semiconductor layer 215 is located on the second substrate 14 side of the second intrinsic semiconductor layer 213. The second conductivity type semiconductor layer 215 is an electron transport layer or a hole transport layer. When the second conductivity type semiconductor layer 215 is an electron transport layer, the electron transport layer serves to transfer electrons generated in the second photoelectric conversion layer 211 to the second transparent electrode layer 217. When the second conductivity type semiconductor layer 215 is a hole transport layer, the hole transport layer serves to transfer holes generated in the second photoelectric conversion layer 211 to the second transparent electrode layer 217. Here, the material of the electron transport layer may be, for example, n-type amorphous silicon, or another material. For example, a thin film of n-type amorphous silicon may be used for the second conductivity type semiconductor layer 215. For example, p-type amorphous silicon or another material may be used for the material of the hole transport layer. For example, a thin film of p-type amorphous silicon may be used for the second conductivity type semiconductor layer 215. The thickness (e.g., thickness in the Z direction) of the second conductivity type semiconductor layer 215 may be, for example, about 1 nm to 10 nm.

[0091] The first transparent electrode layer 216 is located above the first conductivity type semiconductor layer 214. In other words, the first transparent electrode layer 216 is located on the opposite side of the first conductivity type semiconductor layer 214 from the first intrinsic semiconductor layer 212. From another perspective, the first transparent electrode layer 216 is located on the first substrate 10 side of the first conductivity type semiconductor layer 214. The material of the first transparent electrode layer 216 may be, for example, a transparent conductive oxide (TCO) that is translucent to light in a specific wavelength range, or another material. The thickness (e.g., Z-direction thickness) of the first transparent electrode layer 216 may be, for example, approximately 30 nm to 200 nm.

[0092] The second transparent electrode layer 217 is located below the second conductivity type semiconductor layer 215. In other words, the second transparent electrode layer 217 is located on the opposite side of the second conductivity type semiconductor layer 215 from the second intrinsic semiconductor layer 213. From another perspective, the second transparent electrode layer 217 is located on the second substrate 14 side of the second conductivity type semiconductor layer 215. The material of the second transparent electrode layer 217 may be, for example, a transparent conductive oxide (TCO) that is translucent to light in a specific wavelength range, or another material. The thickness (e.g., Z direction thickness) of the second transparent electrode layer 217 may be, for example, approximately 30 nm to 200 nm.

[0093] <2-1-2. First Collector 22> The first collector 22 is located above the first transparent electrode layer 216. In other words, the first collector 22 is located on the opposite side of the first transparent electrode layer 216 from the first conductivity-type semiconductor layer 214. From another perspective, the first collector 22 is located on the first substrate 10 side of the first transparent electrode layer 216. The first collector 22 includes, for example, one or more busbar electrodes. In the example of FIG. 5 , the one or more busbar electrodes are three busbar electrodes. The first collector 22 may include a plurality of finger electrodes that respectively intersect with the one or more busbar electrodes. The first collector 22 is a layer that has a role of collecting carriers generated in the second photoelectric conversion layer 211.

[0094] The material of the first collector electrode 22 may contain, for example, mainly silver or may contain other materials. The first collector electrode 22 may be formed using, for example, silver paste.

[0095] <2-1-3. Second Collector 23> The second collector 23 is located below the second transparent electrode layer 217. In other words, the second collector 23 is located on the opposite side of the second transparent electrode layer 217 from the second conductivity-type semiconductor layer 215. From another perspective, the second collector 23 is located on the second substrate 14 side of the second transparent electrode layer 217. The second collector 23 includes, for example, one or more busbar electrodes. In the example of FIG. 5 , the one or more busbar electrodes may be three busbar electrodes. The second collector 23 may include a plurality of finger electrodes that respectively intersect with the one or more busbar electrodes. The second collector 23 is a layer that has a role of collecting carriers generated in the second photoelectric conversion layer 211.

[0096] The material of the second collector electrode 23 may contain, for example, mainly silver or may contain other materials. The second collector electrode 23 may be formed using, for example, silver paste.

[0097] 2-2. Second Solar Cell Module 2 As shown in FIG. 7 , the second solar cell module 2 may include a first base material 10, a first solar cell 11, a covering 12, a sealing material 13, a second base material 14, and a second solar cell 20. In other words, the second solar cell module 2 includes a first photoelectric conversion unit 112, a covering 12, a sealing material 13, and a second photoelectric conversion unit 21. The second solar cell module 2 may include one or more first solar cells 11 and one or more second solar cells 20. The one or more first solar cells 11 may be one first solar cell 11, or may be any number of first solar cells 11, two or more. In the example of FIG. 7 , the second solar cell module 2 includes four first solar cells 11. In the second solar cell module 2, the any number of first solar cells 11, two or more, may be electrically connected in series. In the example of FIG. 7 , four first solar cells 11 are electrically connected in series. Furthermore, the one or more second solar cells 20 may be one second solar cell 20, or any number of second solar cells 20 greater than or equal to two. In the example of FIG. 7 , the second solar cell module 2 includes three second solar cells 20. In the second solar cell module 2, any number of second solar cells 20 greater than or equal to two may be electrically connected in series. In the example of FIG. 7 , the three second solar cells 20 are electrically connected in series. Two adjacent second solar cells 20 among the any number of second solar cells 20 greater than or equal to two may be electrically connected in series by, for example, wiring material 4. The wiring material 4 may be, for example, a thin, strip-shaped or linear metal member. The wiring material 4 may be installed between two adjacent second solar cells 20. For example, in two adjacent second solar cell cells 20, the wiring material 4 may be joined to the first collector electrode portion 22 (specifically, the bus bar electrode) of the first second solar cell 20 and to the second collector electrode portion 23 (specifically, the bus bar electrode) of the second second solar cell 20.

[0098] In the second solar cell module 2, the encapsulant 13 may include a first encapsulant 131 or a second encapsulant 132. As shown in Figure 7, in the second solar cell module 2, the first base material 10, the first solar cell 11, the covering 12, the first encapsulant 131, the second solar cell 20, the second encapsulant 132, and the second base material 14 may be stacked in this order along the -Z direction. Also, as shown in Figure 7, in the second solar cell module 2, the first base material 10, any number of first solar cell cells 11 (two or more), the covering 12, the first encapsulant 131, any number of second solar cell cells 20 (two or more), the second encapsulant 132, and the second base material 14 may be stacked in this order along the -Z direction. In the example of Figure 7, a first substrate 10, four first solar cells 11 electrically connected in series, a covering portion 12, a first sealing material 131, three second solar cells 20 electrically connected in series, a second sealing material 132, and a second substrate 14 may be stacked along the -Z direction in the order shown.

[0099] The second solar cell 20 may be located between the first base material 10 and the second base material 14. More specifically, the second solar cell 20 may be located between the first solar cell 11 and the second base material 14. The first sealing material 131 may be filled between the first solar cell 11 and the second solar cell 20. Here, the first sealing material 131 may be filled between the covering portion 12 and the second solar cell 20. In other words, the first sealing material 131 may be located between the covering portion 12 and the second photoelectric conversion portion 21. Here, it is assumed that the second solar cell module 2 includes the first base material 10 and the second base material 14. In this case, the first photoelectric conversion portion 112 and the second photoelectric conversion portion 21 may be located between the first base material 10 and the second base material 14. For example, the first photoelectric conversion portion 112 and the second photoelectric conversion portion 21 may be aligned in the −Z direction, which is the first direction. The second sealing material 132 may be filled between the second solar cell 20 and the second base material 14. In other words, the second sealing material 132 may be located between the second photoelectric conversion unit 21 and the second base material 14. Note that in the second solar cell module 2, the sealing material 13 is not limited to a configuration including the first sealing material 131 and the second sealing material 132, and may be a single sealing material. The single sealing material may be the first sealing material 131.

[0100] <2-2-1. Second sealing material 132> The second sealing material 132 may be translucent to light in a specific wavelength range. This allows, for example, light irradiated onto the second sealing material 132 from the second base material 14 side to pass through the second sealing material 132 and reach the first photoelectric conversion unit 112 or the second photoelectric conversion unit 21. Here, for example, if the specific wavelength range includes a visible light wavelength range of about 400 nm to 700 nm, in which the irradiation intensity is relatively high compared to other wavelength ranges in the spectral distribution of the irradiation intensity of sunlight, the photoelectric conversion efficiency of the second solar cell module 2 can be improved.

[0101] The second sealing material 132 may have insulating properties. This can reduce the occurrence of leakage current flowing between two or more parts among the second solar cell 20, the various wirings, and the outside of the second solar cell module 2. Possible examples of the various wirings include the wiring material 4. Furthermore, if the second sealing material 132 has insulating properties, the occurrence of leakage current flowing between the first solar cell 11 and the second solar cell 20 can be reduced.

[0102] The second sealing material 132 may contain an acid acceptor that captures acid. The acid acceptor may contain at least magnesium hydroxide as a material that captures acid, or may contain other materials. This can reduce deterioration of the first photoelectric conversion section 112 (more specifically, the first photoelectric conversion layer 1122).

[0103] The second sealing material 132 may be, for example, EVA, ethylene-α-olefin copolymer, EVAT, PVB, acrylic resin, urethane resin, silicone resin, or other materials.

[0104] Here, it is assumed that each of the first sealing material 131 and the second sealing material 132 contains an acid acceptor that captures acid. In this case, the concentration of the acid acceptor in the second sealing material 132 may be lower than the concentration of the acid acceptor in the first sealing material 131. In other words, the concentration of the acid acceptor in the first sealing material 131 may be higher than the concentration of the acid acceptor in the second sealing material 132. This can further reduce the amount of acid reaching the first photoelectric conversion section 112 (more specifically, the first photoelectric conversion layer 1122). The concentration of an acid acceptor in a certain substance is a content that indicates the proportion of the acid acceptor component contained in this certain substance. The content may be expressed as a molar concentration, a mass fraction, a volume fraction, or a molar fraction.

[0105] 3. Third Embodiment The third embodiment relates to a tandem solar cell module having tandem solar cells each including two photoelectric conversion layers with different bandgaps.

[0106] The tandem solar cell of the third embodiment has a multi-junction structure in which two photoelectric conversion layers with different bandgaps are stacked. Therefore, the two photoelectric conversion layers perform photoelectric conversion of light in different wavelength ranges. This allows light in a wide wavelength range to be effectively utilized, thereby increasing the conversion efficiency of the solar cell.

[0107] Fig. 8 schematically shows an example of the configuration of a solar cell (also referred to as a first solar cell) 30 of a solar cell module (also referred to as a third solar cell module) 3 according to the third embodiment. Fig. 9 schematically shows an example of a virtual cross section of the first solar cell 30 viewed toward the +X direction at position IX-IX in Fig. 8. Fig. 10 schematically shows an example of a virtual cross section of the third solar cell module 3 according to the third embodiment. Fig. 11 schematically shows an example of a cross section of the covering portion 12 and a portion of the periphery of the covering portion 12.

[0108] The third solar cell module 3 according to the third embodiment is based on the first solar cell module 1 according to the first embodiment, and has a configuration including a first solar cell 30 that is a tandem solar cell instead of the first solar cell 11. Below, with reference to Figures 8 to 11 , the third solar cell module 3 according to the third embodiment will be described, focusing on the configuration that differs from the first solar cell module 1 according to the first embodiment and the second solar cell module 2 according to the second embodiment.

[0109] 9, each of the plurality of components in the first solar cell 30 may exist along the XY plane. In the first solar cell 30, two adjacent components among the plurality of components may be in contact with each other over their entire surfaces, may be in contact with each other over substantially their entire surfaces, or may be in contact with each other only partially.

[0110] 9 , the first solar cell 30 has a first collector 22 as a first electrode portion, a second collector 23 as a second electrode portion, and a first photoelectric conversion portion 31. The first solar cell 30 may have a configuration in which the first collector 22, the first photoelectric conversion portion 31, and the second collector 23 are stacked in this order. The first collector 22, the first photoelectric conversion portion 31, and the second collector 23 may be stacked in this order along the −Z direction. From another perspective, at least a portion of the first photoelectric conversion portion 31 may be located between the first collector 22 as the first electrode portion and the second collector 23 as the second electrode portion.

[0111] <3-1-1. First Photoelectric Conversion Section 31> The first photoelectric conversion section 31 may have a first photoelectric conversion layer 1122, a first carrier transport layer 1121, a second carrier transport layer 1123, a second A electrode section 113A, a second photoelectric conversion layer 211, a first intrinsic semiconductor layer 212, a second intrinsic semiconductor layer 213, a first conductivity type semiconductor layer 214, a second conductivity type semiconductor layer 215, a second transparent electrode layer 217, and a second intermediate layer 311. In other words, the first photoelectric conversion section 31 may have the first photoelectric conversion layer 1122 and the second photoelectric conversion layer 211. As described above, the first photoelectric conversion layer 1122 includes a compound having a perovskite structure.

[0112] In the first photoelectric conversion section 31, the secondA electrode section 113A, the second carrier transport layer 1123, the first photoelectric conversion layer 1122, the first carrier transport layer 1121, the second intermediate layer 311, the first conductivity type semiconductor layer 214, the first intrinsic semiconductor layer 212, the second photoelectric conversion layer 211, the second intrinsic semiconductor layer 213, the second conductivity type semiconductor layer 215, and the second transparent electrode layer 217 may be stacked in this order along the -Z direction. In other words, in the first photoelectric conversion section 31, the first photoelectric conversion layer 1122 and the second photoelectric conversion layer 211 may be aligned in the -Z direction as the first direction.

[0113] The first photoelectric conversion layer 1122 has a different band gap from the second photoelectric conversion layer 211. In other words, the second photoelectric conversion layer 211 has a different band gap from the first photoelectric conversion layer 1122. As a result, the wavelength range of light that can be absorbed in the first solar cell 30 can be broadened compared to the above-described first solar cell 11. Here, the band gap of the first photoelectric conversion layer 1122 may be larger than the band gap of the second photoelectric conversion layer 211. In other words, the band gap of the second photoelectric conversion layer 211 may be smaller than the band gap of the first photoelectric conversion layer 1122. In this case, light energy higher than the light energy absorbed in the second photoelectric conversion layer 211 and converted into electrical energy can be absorbed in the first photoelectric conversion layer 1122 and converted into electrical energy. In other words, the conversion of light energy higher than the light energy absorbed in the second photoelectric conversion layer 211 and converted into electrical energy into thermal energy can be reduced. This can improve the photoelectric conversion efficiency of the first solar cell 30 .

[0114] When the first carrier transport layer 1121 is an electron transport layer and the second carrier transport layer 1123 is a hole transport layer, a hole transport layer is applied to the first conductivity type semiconductor layer 214, and an electron transport layer is applied to the second conductivity type semiconductor layer 215. When the first carrier transport layer 1121 is a hole transport layer and the second carrier transport layer 1123 is an electron transport layer, an electron transport layer is applied to the first conductivity type semiconductor layer 214, and a hole transport layer is applied to the second conductivity type semiconductor layer 215.

[0115] The second A electrode portion 113A may have the same or similar configuration and function as the above-described second electrode portion 113. The second A electrode portion 113A is located above the second carrier transport layer 1123. In other words, the second A electrode portion 113A is located on the opposite side of the second carrier transport layer 1123 from the first photoelectric conversion layer 1122. From another perspective, the second A electrode portion 113A is located on the first substrate 10 side of the second carrier transport layer 1123.

[0116] The second intermediate layer 311 may be located between the first photoelectric conversion layer 1122 and the second photoelectric conversion layer 211. The second intermediate layer 311 electrically connects the first photoelectric conversion layer 1122 and the second photoelectric conversion layer 211 in series by forming a tunnel junction. The second intermediate layer 311 may also have a wavelength-selective reflection function, that is, reflecting short-wavelength light and transmitting long-wavelength light. The short-wavelength light may be light that is absorbed by the first photoelectric conversion layer 1122 and whose optical energy is converted into electrical energy by photoelectric conversion. The long-wavelength light may be light that is absorbed by the second photoelectric conversion layer 211 and whose optical energy is converted into electrical energy by photoelectric conversion. The material of the second intermediate layer 311 may be selectively selected from transparent conductive oxides (TCOs) or other transparent conductive materials depending on the types of the first photoelectric conversion layer 1122 and the second photoelectric conversion layer 211. The second intermediate layer 311 may be translucent to light in a specific wavelength range. The specific wavelength range may include, for example, a wavelength range of light that can generate photovoltaic power when the first photoelectric conversion layer 1122 or the second photoelectric conversion layer 211 receives light. Specifically, the specific wavelength range may include a wavelength range of visible light of about 400 nm to 700 nm and a wavelength range of infrared light of about 700 nm to 1200 nm. The material of the second intermediate layer 311 may be, for example, a transparent conductive oxide (TCO) that is translucent to light in the specific wavelength range, or other materials.

[0117] 3-2. Third Solar Cell Module 3 As shown in FIG. 10 , the third solar cell module 3 may include a first base material 10, a covering 12, a sealing material 13, a second base material 14, and first solar cells 30. In other words, the third solar cell module 3 may include a first photoelectric conversion unit 31, a first collector electrode 22, a second collector electrode 23, a covering 12, and a sealing material 13. The third solar cell module 3 may include one or more first solar cells 30. The one or more first solar cells 30 may be one first solar cell 30, or may be any number of first solar cells 30 equal to or greater than two. In the example of FIG. 10 , the third solar cell module 3 includes three first solar cells 30. In the third solar cell module 3, any number of first solar cells 30 equal to or greater than two may be electrically connected in series. In the example of FIG. 10 , the three first solar cells 30 are electrically connected in series. Two adjacent first solar cells 30 among any number of two or more first solar cells 30 may be electrically connected in series by, for example, wiring material 4. The wiring material 4 may be, for example, a thin, strip-shaped or linear member made of metal. The wiring material 4 may be installed between two adjacent first solar cells 30. For example, in two adjacent first solar cells 30, the wiring material 4 may be joined to the first collector electrode 22 (specifically, a bus bar electrode) of the first first solar cell 30, and may be joined to the second collector electrode 23 (specifically, a bus bar electrode) of the second first solar cell 30.

[0118] In the third solar cell module 3, the covering 12 may cover the entire periphery of the first solar cell 30. That is, the covering 12 may cover the entire periphery of the first collector electrode 22, the second collector electrode 23, and the first photoelectric conversion section 31. In other words, the covering 12 may cover at least a portion of the first photoelectric conversion section 31. As shown in FIG. 11 , the covering 12 includes a first covering layer 121. The first covering layer 121 includes an inorganic substance that has barrier properties against acid. The covering 12 is also covered with a sealing material 13. As a result, the covering 12 is sealed by the sealing material 13. In the example of FIG. 10 , the entire periphery of the covering 12 is covered with the sealing material 13. Here, as described above, the sealing material 13 includes a first sealing material 131 having a chemical structure that generates free acid. Therefore, the presence of the covering unit 12 can reduce the penetration of free acid generated in the first sealing material 131 into the first photoelectric conversion unit 31 (more specifically, the first photoelectric conversion layer 1122). For example, when the first sealing material 131 contains ethylene vinyl acetate, the penetration of acetic acid as a free acid generated by hydrolysis due to a reaction between water molecules and vinyl acetate in the first sealing material 131 into the first photoelectric conversion unit 31 (more specifically, the first photoelectric conversion layer 1122) can be reduced. This can reduce deterioration of the first photoelectric conversion unit 31 (more specifically, the first photoelectric conversion layer 1122).

[0119] Here, it is assumed that the third solar cell module 3 includes two or more first solar cells 30 electrically connected in series by wiring material 4. In this case, the covering 12 may also cover the wiring material 4. However, the portion of the wiring material 4 that is drawn out to the outside of the third solar cell module 3 does not need to be covered by the covering 12.

[0120] The first solar cell 30 is located between the first base material 10 and the second base material 14. A solid sealing material 13 is filled between the first base material 10 and the second base material 14. The sealing material 13 may include a first sealing material 131 and a second sealing material 132. In other words, the solid first sealing material 131 and the second sealing material 132 may be filled between the first base material 10 and the second base material 14. From another perspective, the covering portion 12 and the first solar cell 30 may be sealed by the first sealing material 131 and the second sealing material 132. Note that in the third solar cell module 3, the sealing material 13 is not limited to a configuration including the first sealing material 131 and the second sealing material 132, and may be a single sealing material. The single sealing material may be the first sealing material 131.

[0121] The first sealing material 131 may be filled between the first base material 10 and the first solar cell 30 covered with the covering portion 12. For example, the first sealing material 131 may be filled between the −Z direction surface of the first base material 10 and the +Z direction surface of the covering portion 12 covering the first solar cell 30. The second sealing material 132 may be filled between the second base material 14 and the first solar cell 30 covered with the covering portion 12. For example, the second sealing material 132 may be filled between the +Z direction surface of the second base material 14 and the −Z direction surface of the covering portion 12 covering the first solar cell 30. In this way, the first solar cell 30 covered with the covering portion 12 may be sealed by the first sealing material 131 and the second sealing material 132.

[0122] Here, for example, the covering 12 does not have to cover the first collector 22 and / or the second collector 23. In other words, for example, the covering 12 may cover a portion of the first photoelectric conversion unit 31 that is not covered by the first collector 22 and / or the second collector 23. Note that, for example, if the covering 12 covers the first collector 22 and the second collector 23, the penetration of acid and / or moisture into the first photoelectric conversion unit 31 through the gap between the covering 12 and the first collector 22 and / or the second collector 23 can be reduced. Note that, in the above description, the first collector 22 corresponds to the first electrode unit, and the second collector 23 corresponds to the second electrode unit, but this is not limited thereto. For example, the first electrode unit may include the second-A electrode unit 113A in addition to the first collecting electrode unit 22, and the second electrode unit may include the second transparent electrode layer 217 in addition to the second collecting electrode unit 23. In this case, for example, the covering unit 12 may not cover the first collecting electrode unit 22 and the second-A electrode unit 113A, or may not cover the second collecting electrode unit 23 and the second transparent electrode layer 217.

[0123] As shown in FIG. 11 , the covering unit 12 may include a first intermediate layer 122 or a second covering layer 123 in addition to the first covering layer 121. In other words, the covering unit 12 may be, for example, a layer composed of the first covering layer 121. The covering unit 12 may have, for example, a structure in which the first covering layer 121 and the first intermediate layer 122 are stacked. The order in which the first covering layer 121 and the first intermediate layer 122 are stacked from the first solar cell 30 side may be set as appropriate. The covering unit 12 may have, for example, a structure in which the first covering layer 121 and the second covering layer 123 are stacked. The order in which the first covering layer 121 and the second covering layer 123 are stacked from the first solar cell 30 side may be set as appropriate. The covering unit 12 may have, for example, a structure in which the first covering layer 121, the first intermediate layer 122, and the second covering layer 123 are stacked. The order in which the first covering layer 121, the first intermediate layer 122, and the second covering layer 123 are stacked from the first solar cell 30 side may be set appropriately.

[0124] <Another First Example of Third Solar Cell Module 3> Figure 12 schematically shows a virtual cross section of the first solar cell 30 and the covering portion 12 of another first example of the third solar cell module 3 according to the third embodiment. In Figure 12, parts other than the first solar cell 30 and the covering portion 12 of the other first example of the third solar cell module 3 according to the third embodiment are not shown.

[0125] Here, the direction in which the first photoelectric conversion layer 1122 and the second photoelectric conversion layer 211 are aligned is the −Z direction as the first direction, and the direction perpendicular to the first direction is the second direction. The second direction may be the +X direction, the −X direction, the +Y direction, or the −Y direction. Furthermore, as shown in FIG. 12 , the thickness in the second direction of the portion of the covering 12 located on the second direction side of the first photoelectric conversion layer 1122 is defined as a first thickness T1. Furthermore, the thickness in the second direction of the portion of the covering 12 located on the second direction side of the second photoelectric conversion layer 211 is defined as a second thickness T2.

[0126] Here, as shown in FIG. 12 , the first thickness T1 may be greater than the second thickness T2. This may reduce the amount of water molecules and / or acid reaching the first photoelectric conversion layer 1122 containing a compound having a perovskite structure. As a result, deterioration of the first photoelectric conversion layer 1122 in the first photoelectric conversion unit 31 may be reduced. Note that, for example, the covering unit 12 may be in contact with the first photoelectric conversion layer 1122. In this case, the first thickness T1 may be the thickness in the second direction of a portion of the covering unit 12 that is in contact with the first photoelectric conversion layer 1122. For example, the covering unit 12 may be in contact with the second photoelectric conversion layer 211. In this case, the second thickness T2 may be the thickness in the second direction of a portion of the covering unit 12 that is in contact with the second photoelectric conversion layer 211.

[0127] The coating portion 12 may be formed by, for example, sputtering, vacuum deposition, or chemical vapor deposition (CVD).

[0128] Here, for example, it is assumed that the covering portion 12 is formed on the first solar cell 30 by vapor deposition, sputtering, or the like. In this case, the deposition amount of the covering portion 12 from the +Z direction (the opposite direction to the first direction) may be greater than the deposition amount of the covering portion 12 from the −Z direction (the first direction). This may result in the first thickness T1 being greater than the second thickness T2. Here, for example, in a film-forming apparatus that forms the covering portion 12 on the first solar cell 30, the deposition amount of the covering portion 12 on the second direction side of the first solar cell 30 may be adjusted by adjusting the degree of vacuum, thereby making the first thickness T1 greater than the second thickness T2. Here, for example, in a film-forming apparatus that forms the covering portion 12 on the first solar cell 30, the deposition amount of the covering portion 12 on the second direction side of the first solar cell 30 may be adjusted by arranging an obstacle, thereby making the first thickness T1 greater than the second thickness T2. Here, in a film forming apparatus that forms covering portion 12 on first solar cell 30, first solar cell 30 may be supported by a plurality of lift pins that are different in time sequence, thereby forming covering portion 12 over the entire periphery of first solar cell 30. Note that, for example, covering portion 12 may be formed on a plurality of first solar cells 30 that are electrically connected by bridging a plurality of wiring members 4, thereby covering the plurality of first solar cells 30 and the plurality of wiring members 4 with covering portion 12. In this case, for example, a mask or the like may be used, and covering portion 12 may not be formed on some of the plurality of wiring members 4.

[0129] <Second Alternative Example of Third Solar Cell Module 3> Figure 13 schematically shows a virtual cross section of the first solar cell 30 and the covering portion 12 in the second alternative example of the third solar cell module 3 according to the third embodiment. In Figure 13, parts other than the first solar cell 30 and the covering portion 12 in the second alternative example of the third solar cell module 3 according to the third embodiment are omitted from the illustration.

[0130] Here, the direction in which the first photoelectric conversion layer 1122 and the second photoelectric conversion layer 211 are aligned is the −Z direction as a first direction, and the direction opposite to the first direction is the +Z direction as a third direction. Also, as shown in Fig. 13, the thickness in the first direction of a portion of the covering 12 located on the side opposite to the first direction of the first photoelectric conversion unit 31 is a third thickness T3. Furthermore, the thickness in the first direction of a portion of the covering 12 located on the first direction side of the first photoelectric conversion unit 31 is a fourth thickness T4.

[0131] 13 , the third thickness T3 may be greater than the fourth thickness T4. This can reduce the amount of water molecules and / or acid reaching the first photoelectric conversion layer 1122 containing a compound having a perovskite structure. As a result, deterioration of the first photoelectric conversion layer 1122 of the first photoelectric conversion unit 31 can be reduced.

[0132] The coating portion 12 may be formed by, for example, sputtering, vacuum deposition, or chemical vapor deposition (CVD).

[0133] Here, for example, it is assumed that the covering portion 12 is formed on the first solar cell 30 by vapor deposition, sputtering, or the like. In this case, the deposition amount of the covering portion 12 from the +Z direction (the opposite direction of the first direction) may be greater than the deposition amount of the covering portion 12 from the −Z direction (the first direction). This may result in the third thickness T3 being greater than the fourth thickness T4. Here, for example, in a film-forming apparatus that forms the covering portion 12 on the first solar cell 30, the deposition amount of the covering portion 12 on the first solar cell 30 may be adjusted depending on the location by adjusting the degree of vacuum, thereby making the third thickness T3 greater than the fourth thickness T4. Here, for example, in a film-forming apparatus that forms the covering portion 12 on the first solar cell 30, the deposition amount of the covering portion 12 on the first solar cell 30 may be adjusted depending on the location by arranging an obstacle, thereby making the third thickness T3 greater than the fourth thickness T4. Again, in the film forming apparatus that forms the covering portion 12 on the first solar cell 30, the first solar cell 30 may be supported by a plurality of different lift pins in time sequence, thereby forming the covering portion 12 over the entire periphery of the first solar cell 30. Note that, for example, the covering portion 12 may be formed on a plurality of first solar cells 30 that are electrically connected by bridging a plurality of wiring members 4, thereby covering the plurality of first solar cells 30 and the plurality of wiring members 4 with the covering portion 12. In this case, for example, a mask or the like may be used, and the covering portion 12 may not be formed on some of the plurality of wiring members 4.

[0134] <4. Method for Manufacturing Solar Cell Module> <4-1. Method for Manufacturing First Solar Cell Module 1> An example of a method for manufacturing the first solar cell module 1 according to the first embodiment will be described with reference to FIGS. 2 and 3. FIG.

[0135] First, an example of a method for manufacturing the first solar cell 11 will be described.

[0136] A first substrate 10 is prepared. A first electrode portion 111 is formed on the first substrate 10. Here, for example, the first electrode portion 111 can be formed on the first substrate 10 by depositing a material for the first electrode portion 111 on the first substrate 10 by a vacuum process such as sputtering.

[0137] Next, as shown in FIG. 2 , the first electrode portion 111 may be separated into a plurality of first electrode portions 111 by forming grooves (also referred to as first grooves) A1. This allows a plurality of first electrode portions 111 to be formed on the first substrate 10. The formation of the first grooves A1 in the first electrode portion 111 may be achieved, for example, by etching or scribing the first electrode portion 111. The first grooves A1 may be formed, for example, by etching using a plasma gas, scribing with a laser (also referred to as laser scribing), or etching with a chemical solution. Alternatively, the first grooves A1 may be formed by mechanical scribing using a metal or the like.

[0138] Next, a first carrier transport layer 1121 is formed on the first electrode unit 111. Here, for example, if there are multiple first electrode units 111 separated by first groove units A1, the first carrier transport layer 1121 may also be formed in the first groove units A1. Here, for example, it is assumed that the first carrier transport layer 1121 is an electron transport layer made of an inorganic material. In this case, a raw material solution prepared by dissolving a raw material such as a metal chloride or a metal isopropoxide in a polar solution is applied to the first electrode unit 111, and a metal oxide is generated by hydrolysis of this raw material. In this way, the first carrier transport layer 1121 made of a metal oxide can be formed on the first electrode unit 111. Examples of the metal chloride include titanium chloride, tin chloride, zinc chloride, and indium chloride. Examples of the metal isopropoxide include titanium isopropoxide, tin isopropoxide, zinc isopropoxide, and indium isopropoxide. More specifically, for example, a titanium tetrachloride aqueous solution is applied to the first electrode portion 111 by spin coating or the like and then dried. Thereafter, the titanium tetrachloride is hydrolyzed by heating on a hot plate, for example, to form titanium dioxide (TiO ２) can be formed. Note that the first groove portion A1 may be formed after the first carrier transport layer 1121 is formed on the first electrode portion 111. In this case, a part of the first carrier transport layer 1121 does not need to be formed in the first groove portion A1.

[0139] In addition, for example, an organic material may be used as the material for the first carrier transport layer 1121. It is assumed that the first carrier transport layer 1121 is an electron transport layer made of an organic material. For example, a fullerene derivative such as PCBM may be used as this organic material. In this case, for example, a raw material solution prepared by dissolving a fullerene derivative in a chlorobenzene solvent is used. The raw material solution applied to the first electrode portion 111 is dried and annealed. As a result, the first carrier transport layer 1121 made of PCBM may be formed on the first electrode portion 111. Furthermore, the organic material used as the material for the first carrier transport layer 1121 may have its solubility in organic solvents and physical properties changed by, for example, modifying the functional group.

[0140] Next, the first photoelectric conversion layer 1122 is formed on the first carrier transport layer 1121. Here, for example, a raw material liquid is applied onto the first carrier transport layer 1121, and the applied raw material liquid is subjected to an annealing treatment. In this way, the first photoelectric conversion layer 1122 can be formed on the first carrier transport layer 1121. The raw material liquid can be generated, for example, by dissolving halogenated alkylamine and lead halide or tin halide, which are raw materials for the first photoelectric conversion layer 1122, in a solvent. In this case, the first photoelectric conversion layer 1122 can be composed of a thin film of a crystalline halogenated perovskite semiconductor.

[0141] Next, a second carrier transport layer 1123 is formed on the first photoelectric conversion layer 1122. Here, for example, a source liquid is applied to the first photoelectric conversion layer 1122, and the source liquid is dried and annealed. This allows the second carrier transport layer 1123 to be formed on the first photoelectric conversion layer 1122. As a result, a first photoelectric conversion section 112 including the first carrier transport layer 1121, the first photoelectric conversion layer 1122, and the second carrier transport layer 1123 can be formed. Here, it is assumed that the second carrier transport layer 1123 is a hole transport layer. In this case, an organic semiconductor material such as Spiro-OMeTAD, P3HT, PTAA, or Poly-TPD can be used as the material for the second carrier transport layer 1123. For example, the source liquid can be prepared by dissolving Spiro-OMeTAD in chlorobenzene. Alternatively, for example, the raw material solution may be prepared by dissolving P3HT in dichlorobenzene, PTAA in toluene, or Poly-TPD in chlorobenzene.

[0142] Next, as shown in FIG. 2 , the first photoelectric conversion unit 112 may be separated into a plurality of first photoelectric conversion units 112 by forming grooves (also referred to as second grooves) A2. This allows the first photoelectric conversion units 112 to be formed on the plurality of first electrode units 111, respectively. The formation of the second grooves A2 in the first photoelectric conversion unit 112 may be achieved by, for example, etching or scribing the first photoelectric conversion unit 112. The second grooves A2 may be formed by, for example, etching using a plasma gas, laser scribing, or etching using a chemical solution. Alternatively, the second grooves A2 may be formed by mechanical scribing using a metal or the like.

[0143] Next, the second electrode unit 113 is formed on the second carrier transport layer 1123. Here, for example, the material of the second electrode unit 113 may be deposited on the second carrier transport layer 1123 by a vacuum process such as sputtering, thereby forming the second electrode unit 113 on the second carrier transport layer 1123. Alternatively, for example, a metal paste as a coating liquid may be applied by screen printing or the like, and then the applied metal paste may be dried and solidified, thereby forming the second electrode unit 113 on the second carrier transport layer 1123. Here, for example, when there are multiple first photoelectric conversion units 112 separated by the second groove unit A2, the second electrode unit 113 is also formed in the second groove unit A2.

[0144] Next, as shown in FIG. 2 , the first photoelectric conversion unit 112 and the second electrode unit 113 may be separated into a plurality of first photoelectric conversion units 112 and a plurality of second electrode units 113 by forming grooves (also referred to as third grooves) A3. This allows the first photoelectric conversion units 112 and the second electrode units 113 to be formed on the plurality of first electrode units 111, respectively. As a result, a plurality of first solar cells 11 may be formed on the first substrate 10. The formation of the third grooves A3 in the first photoelectric conversion units 112 and the second electrode units 113 may be achieved, for example, by etching or scribing the first photoelectric conversion units 112 and the second electrode units 113. The third grooves A3 may be formed, for example, by etching using a plasma gas, laser scribing, or etching using a chemical solution. Alternatively, the third grooves A3 may be formed by mechanical scribing using a metal or the like.

[0145] Next, the covering portion 12 is formed so as to cover the first solar cell 11. Here, for example, if a plurality of first solar cells 11 are present, the covering portion 12 may be formed so as to cover each of the plurality of first solar cells 11. Here, for example, the covering portion 12 is formed so as to cover at least a portion of the first photoelectric conversion portion 112. Here, for example, if a plurality of first solar cells 11 are present, the covering portion 12 may be formed so as to cover at least a portion of each of the plurality of first photoelectric conversion portions 112.

[0146] The first coating layer 121 of the coating unit 12 can be formed by, for example, sputtering, vacuum deposition, or chemical vapor deposition. When the coating unit 12 includes the first intermediate layer 122, the first intermediate layer 122 can be formed by, for example, sputtering, vacuum deposition, or chemical vapor deposition. Here, for example, by using sputtering, vacuum deposition, or chemical vapor deposition, a coating of the material to be formed is formed by depositing the material to be formed on the first solar cell 11 (e.g., the first photoelectric conversion unit 112). When the coating unit 12 includes the second coating layer 123, the second coating layer 123 can be formed by, for example, sequentially applying a solution in which the material of the second coating layer 123 is dissolved in a solvent and then drying the solution by heating. Furthermore, when the second coating layer 123 is located at the outermost part of the coating portion 12, it may be formed by arranging a resin sheet that forms the base of the second coating layer 123 and heating it by a lamination process described below.

[0147] For example, a terminal box 15 is attached to one surface of the second substrate 14 for extracting electricity obtained by photoelectric conversion in the first solar cell 11. Wiring for extracting electricity from the first solar cell 11 is arranged appropriately here. The one surface of the second substrate 14 may be the surface of the second substrate 14 that is located on the opposite side from the first substrate 10 in the state of the first solar cell module 1.

[0148] Next, for example, the first substrate 10, the first solar cell 11 covered with the covering portion 12, the sealing material 13, and the second substrate 14 are stacked in this order and then subjected to a lamination process. Here, for example, a laminator is used to integrate the first substrate 10, the first solar cell 11 covered with the covering portion 12, the sealing material 13, and the second substrate 14. This allows the first solar cell module 1 to be produced. Note that, for example, if there are multiple first solar cells 11 covered with the covering portion 12, the first solar cell 11 covered with the covering portion 12 may be replaced with multiple first solar cells 11 covered with the covering portion 12. This allows the first solar cell module 1 including multiple first solar cells 11 to be produced.

[0149] <4-2. Method for Manufacturing Second Solar Cell Module 2> An example of a method for manufacturing the second solar cell module 2 according to the second embodiment will be described with reference to FIGS. 6 and 7. FIG.

[0150] First, an example of a method for manufacturing the second solar cell 20 will be described.

[0151] A second photoelectric conversion layer 211 is prepared. For example, an n-type crystalline semiconductor substrate is used for the second photoelectric conversion layer 211. For example, an n-type crystalline silicon wafer is used for the n-type crystalline semiconductor substrate. The n-type crystalline silicon wafer is manufactured by, for example, the Czochralski (CZ) method or the epitaxial growth method. A textured structure may be formed on the surface of the n-type crystalline semiconductor substrate by etching.

[0152] Next, the first intrinsic semiconductor layer 212 is formed on the second photoelectric conversion layer 211. Here, the first intrinsic semiconductor layer 212 is formed along one surface (also referred to as the third surface) of the second photoelectric conversion layer 211. The third surface may be, for example, a surface (also referred to as the upper surface) along the XY plane on the upper side of the second photoelectric conversion layer 211. The first intrinsic semiconductor layer 212 is formed by, for example, plasma CVD or catalytic CVD.

[0153] Next, a second intrinsic semiconductor layer 213 is formed on a surface (also referred to as a fourth surface) of the second photoelectric conversion layer 211 opposite to the third surface. Here, the second intrinsic semiconductor layer 213 is formed along the fourth surface of the second photoelectric conversion layer 211. The fourth surface may be, for example, a surface (also referred to as a lower surface) along the XY plane below the second photoelectric conversion layer 211. The second intrinsic semiconductor layer 213 is formed by, for example, plasma CVD or catalytic CVD.

[0154] Next, a first conductivity type semiconductor layer 214 is formed on the first intrinsic semiconductor layer 212. Here, the first conductivity type semiconductor layer 214 is formed along a surface (also referred to as a fifth surface) of the first intrinsic semiconductor layer 212 opposite to the second photoelectric conversion layer 211. The fifth surface may be, for example, a surface (also referred to as a top surface) of the first intrinsic semiconductor layer 212 along the upper XY plane. The first conductivity type semiconductor layer 214 is formed by, for example, plasma CVD or catalytic CVD. Here, when the first conductivity type semiconductor layer 214 is a hole transport layer, the first conductivity type semiconductor layer 214 is formed, for example, by doping an amorphous semiconductor layer (also referred to as an amorphous semiconductor layer) with a p-type dopant such as boron (B).

[0155] Next, a second conductivity type semiconductor layer 215 is formed on the second intrinsic semiconductor layer 213. Here, the second conductivity type semiconductor layer 215 is formed along a surface (also referred to as a sixth surface) of the second intrinsic semiconductor layer 213 opposite to the second photoelectric conversion layer 211. The sixth surface may be, for example, a surface (also referred to as a lower surface) of the second intrinsic semiconductor layer 213 along the XY plane. The second conductivity type semiconductor layer 215 is formed by, for example, plasma CVD or catalytic CVD. Here, when the second conductivity type semiconductor layer 215 is an electron transport layer, the second conductivity type semiconductor layer 215 is formed by, for example, doping an amorphous semiconductor layer with an n-type dopant such as phosphorus (P).

[0156] Next, the first transparent electrode layer 216 is formed on the first conductivity type semiconductor layer 214. Here, the first transparent electrode layer 216 is formed along a surface (also referred to as a seventh surface) of the first conductivity type semiconductor layer 214 opposite to the first intrinsic semiconductor layer 212. The seventh surface may be, for example, a surface (also referred to as a top surface) of the first conductivity type semiconductor layer 214 along the upper XY plane. The first transparent electrode layer 216 may be formed by depositing a material for the first transparent electrode layer 216 on the first conductivity type semiconductor layer 214 by a vacuum process such as sputtering.

[0157] Next, the second transparent electrode layer 217 is formed on the second conductivity type semiconductor layer 215. Here, the second transparent electrode layer 217 is formed along a surface (also referred to as an eighth surface) of the second conductivity type semiconductor layer 215 opposite to the second intrinsic semiconductor layer 213. The eighth surface may be, for example, a surface (also referred to as a lower surface) of the second conductivity type semiconductor layer 215 along the XY plane. The second transparent electrode layer 217 may be formed by depositing a material for the second transparent electrode layer 217 on the second conductivity type semiconductor layer 215 by a vacuum process such as sputtering.

[0158] Next, the first collecting electrode portion 22 is formed on the first transparent electrode layer 216. Here, the first collecting electrode portion 22 is formed along a surface (also referred to as a ninth surface) of the first transparent electrode layer 216 opposite to the first conductivity-type semiconductor layer 214. The ninth surface may be, for example, a surface (also referred to as an upper surface) of the first transparent electrode layer 216 that is along the XY plane on the upper side. The first collecting electrode portion 22 can be formed, for example, by applying a metal paste as a coating liquid onto the first transparent electrode layer 216 by screen printing or the like, and then drying and solidifying the applied metal paste.

[0159] Next, the second collector electrode 23 is formed on the second transparent electrode layer 217. Here, the second collector electrode 23 is formed along a surface (also referred to as a tenth surface) of the second transparent electrode layer 217 opposite the second conductivity-type semiconductor layer 215. The tenth surface may be, for example, a surface (also referred to as a bottom surface) of the second transparent electrode layer 217 along the XY plane on the lower side. The second collector electrode 23 may be formed, for example, by applying a metal paste as a coating liquid onto the second transparent electrode layer 217 by screen printing or the like, and then drying and solidifying the applied metal paste. This allows the second solar cell 20 to be produced. Here, when a second solar cell module 2 including a plurality of second solar cell cells 20 is manufactured, the plurality of second solar cell cells 20 may be electrically connected by a plurality of wiring members 4.

[0160] For example, a terminal box 15 is attached to one surface of the second substrate 14 for extracting electricity obtained by photoelectric conversion in the first solar cell 11 and the second solar cell 20. Here, wiring for extracting electricity from the first solar cell 11 and the second solar cell 20 is appropriately arranged. The one surface of the second substrate 14 may be the surface of the second substrate 14 that is located on the opposite side of the first substrate 10 in the state of the second solar cell module 2.

[0161] Next, for example, the first substrate 10, the first solar cell 11 covered with the covering 12, the first sealing material 131, the second solar cell 20, the second sealing material 132, and the second substrate 14 are stacked in this order and then laminated. Here, for example, a laminator is used to integrate the first substrate 10, the first solar cell 11 covered with the covering 12, the first sealing material 131, the second solar cell 20, the second sealing material 132, and the second substrate 14. This allows the second solar cell module 2 to be produced. Note that, for example, if there are multiple first solar cells 11 covered with the covering 12, the first solar cell 11 covered with the covering 12 may be replaced with multiple first solar cells 11 covered with the covering 12. This allows the second solar cell module 2 including multiple first solar cells 11 to be produced. Furthermore, here, for example, when a plurality of second solar cells 20 are present, the second solar cell 20 may be replaced with a plurality of second solar cells 20. In this way, a second solar cell module 2 including a plurality of second solar cells 20 can be produced.

[0162] <4-3. Method for Manufacturing Third Solar Cell Module 3> An example of a method for manufacturing the third solar cell module 3 according to the third embodiment will be described with reference to FIGS. 9 and 10. FIG.

[0163] First, an example of a method for manufacturing the first solar cell 30 will be described.

[0164] A second photoelectric conversion layer 211 is prepared. For example, an n-type crystalline semiconductor substrate is used for the second photoelectric conversion layer 211. For example, an n-type crystalline silicon wafer is used for the n-type crystalline semiconductor substrate. The n-type crystalline silicon wafer is manufactured by, for example, the CZ method or the epitaxial growth method. A textured structure may be formed on the surface of the n-type crystalline semiconductor substrate by etching.

[0165] Next, the first intrinsic semiconductor layer 212 is formed on the second photoelectric conversion layer 211. Here, the first intrinsic semiconductor layer 212 is formed along one surface (third surface) of the second photoelectric conversion layer 211. The third surface may be, for example, a surface (top surface) along the XY plane on the upper side of the second photoelectric conversion layer 211. The first intrinsic semiconductor layer 212 is formed by, for example, plasma CVD or catalytic CVD.

[0166] Next, the second intrinsic semiconductor layer 213 is formed on the surface (fourth surface) of the second photoelectric conversion layer 211 opposite to the third surface. Here, the second intrinsic semiconductor layer 213 is formed along the fourth surface of the second photoelectric conversion layer 211. The fourth surface may be, for example, a surface (lower surface) along the XY plane below the second photoelectric conversion layer 211. The second intrinsic semiconductor layer 213 is formed by, for example, plasma CVD or catalytic CVD.

[0167] Next, the first conductivity type semiconductor layer 214 is formed on the first intrinsic semiconductor layer 212. Here, the first conductivity type semiconductor layer 214 is formed along a surface (fifth surface) of the first intrinsic semiconductor layer 212 opposite to the second photoelectric conversion layer 211. The fifth surface may be, for example, a surface (top surface) of the first intrinsic semiconductor layer 212 along the upper XY plane. The first conductivity type semiconductor layer 214 is formed by, for example, plasma CVD or catalytic CVD. Here, when the first conductivity type semiconductor layer 214 is a hole transport layer, the first conductivity type semiconductor layer 214 is formed by, for example, doping an amorphous semiconductor layer with a p-type dopant such as boron (B).

[0168] Next, the second conductivity type semiconductor layer 215 is formed on the second intrinsic semiconductor layer 213. Here, the second conductivity type semiconductor layer 215 is formed along a surface (sixth surface) of the second intrinsic semiconductor layer 213 opposite to the second photoelectric conversion layer 211. The sixth surface may be, for example, a surface (lower surface) of the second intrinsic semiconductor layer 213 along the XY plane on the lower side. The second conductivity type semiconductor layer 215 is formed by, for example, plasma CVD or catalytic CVD. Here, when the second conductivity type semiconductor layer 215 is an electron transport layer, the second conductivity type semiconductor layer 215 is formed by, for example, doping an amorphous semiconductor layer with an n-type dopant such as phosphorus (P).

[0169] Next, the second transparent electrode layer 217 is formed on the second conductivity type semiconductor layer 215. Here, the second transparent electrode layer 217 is formed along a surface (eighth surface) of the second conductivity type semiconductor layer 215 opposite to the second intrinsic semiconductor layer 213. The eighth surface may be, for example, a surface (lower surface) of the second conductivity type semiconductor layer 215 along the XY plane on the lower side. The second transparent electrode layer 217 can be formed by depositing a material for the second transparent electrode layer 217 on the second conductivity type semiconductor layer 215 by a vacuum process such as sputtering.

[0170] Next, the second intermediate layer 311 is formed on the first conductivity type semiconductor layer 214. Here, the second intermediate layer 311 is formed along a surface (seventh surface) of the first conductivity type semiconductor layer 214 opposite to the first intrinsic semiconductor layer 212. The seventh surface may be, for example, a surface (top surface) of the first conductivity type semiconductor layer 214 along the upper XY plane. The second intermediate layer 311 can be formed by depositing a material for the second intermediate layer 311 on the first conductivity type semiconductor layer 214 by a vacuum process such as sputtering.

[0171] Next, a first carrier transport layer 1121 is formed on the second intermediate layer 311. Here, the first carrier transport layer 1121 is formed along the surface (also referred to as the 11th surface) of the second intermediate layer 311 opposite the first conductivity-type semiconductor layer 214. The 11th surface may be, for example, the surface (top surface) of the second intermediate layer 311 along the upper XY plane. Here, for example, it is assumed that the first carrier transport layer 1121 is an electron transport layer made of an inorganic material. In this case, for example, a raw material solution prepared by dissolving a raw material such as a metal chloride or a metal isopropoxide in a polar solution is applied to the second intermediate layer 311, and a metal oxide is generated by hydrolysis of this raw material. In this way, the first carrier transport layer 1121 made of a metal oxide can be formed on the second intermediate layer 311. Examples of the metal chloride include titanium chloride, tin chloride, zinc chloride, and indium chloride. Examples of the metal isopropoxide include titanium isopropoxide, tin isopropoxide, zinc isopropoxide, and indium isopropoxide. More specifically, for example, an aqueous solution of titanium tetrachloride is applied to the second intermediate layer 311 by spin coating or the like and then dried. Thereafter, the titanium tetrachloride is hydrolyzed by heating on a hot plate, for example, to form TiO on the second intermediate layer 311. ２ The first carrier transport layer 1121 may be formed of the following:

[0172] In addition, for example, an organic material may be used as the material for the first carrier transport layer 1121. It is assumed that the first carrier transport layer 1121 is an electron transport layer made of an organic material. For example, a fullerene derivative such as PCBM may be used as this organic material. In this case, for example, a raw material solution prepared by dissolving a fullerene derivative in a chlorobenzene solvent is used. The raw material solution applied to the second intermediate layer 311 is dried and annealed. As a result, the first carrier transport layer 1121 made of PCBM may be formed on the second intermediate layer 311. Furthermore, the organic material used as the material for the first carrier transport layer 1121 may have its solubility in organic solvents and physical properties changed by, for example, modifying the functional group.

[0173] Next, the first photoelectric conversion layer 1122 is formed on the first carrier transport layer 1121. Here, the first photoelectric conversion layer 1122 is formed along the surface (also referred to as the 12th surface) of the first carrier transport layer 1121 opposite the second intermediate layer 311. The 12th surface may be, for example, the surface (also referred to as the upper surface) of the first carrier transport layer 1121 along the XY plane on the upper side. Here, for example, a raw material solution is applied to the first carrier transport layer 1121, and the applied raw material solution is subjected to an annealing treatment. As a result, the first photoelectric conversion layer 1122 can be formed on the first carrier transport layer 1121. The raw material solution can be generated, for example, by dissolving a halogenated alkylamine and a lead halide or a tin halide, which are raw materials for the first photoelectric conversion layer 1122, in a solvent. In this case, the first photoelectric conversion layer 1122 can be composed of a thin film of a crystalline halogenated perovskite semiconductor.

[0174] Next, a second carrier transport layer 1123 is formed on the first photoelectric conversion layer 1122. Here, the second carrier transport layer 1123 is formed along the surface (also referred to as the 13th surface) of the first photoelectric conversion layer 1122 opposite to the first carrier transport layer 1121. The 13th surface may be, for example, the surface (also referred to as the upper surface) of the first photoelectric conversion layer 1122 along the XY plane on the upper side. Here, for example, a raw material solution is applied to the first photoelectric conversion layer 1122, and this raw material solution is subjected to drying and annealing processes. As a result, the second carrier transport layer 1123 can be formed on the first photoelectric conversion layer 1122. Here, it is assumed that the second carrier transport layer 1123 is a hole transport layer. In this case, an organic semiconductor material such as Spiro-OMeTAD, P3HT, PTAA, or Poly-TPD can be used as the material for the second carrier transport layer 1123. For example, the raw material solution may be prepared by dissolving Spiro-OMeTAD in chlorobenzene. Alternatively, the raw material solution may be prepared by dissolving P3HT in dichlorobenzene. Alternatively, the raw material solution may be prepared by dissolving PTAA in toluene. Alternatively, the raw material solution may be prepared by dissolving Poly-TPD in chlorobenzene.

[0175] Next, the second-A electrode portion 113A is formed on the second carrier transport layer 1123. Here, the second-A electrode portion 113A is formed along a surface (also referred to as a 14th surface) of the second carrier transport layer 1123 opposite the first photoelectric conversion layer 1122. The 14th surface may be, for example, a surface (also referred to as an upper surface) of the second carrier transport layer 1123 along the upper XY plane. Here, the second-A electrode portion 113A may be formed on the second carrier transport layer 1123 by, for example, depositing a material for the second-A electrode portion 113A on the second carrier transport layer 1123 by a vacuum process such as sputtering. Alternatively, the second-A electrode portion 113A may be formed on the second carrier transport layer 1123 by, for example, applying a metal paste as a coating liquid by screen printing or the like, and then drying and solidifying the applied metal paste. Here, by forming the second A electrode portion 113A, a first photoelectric conversion portion 31 can be formed, which includes the second A electrode portion 113A, a second carrier transport layer 1123, a first photoelectric conversion layer 1122, a first carrier transport layer 1121, a second intermediate layer 311, a first conductivity type semiconductor layer 214, a first intrinsic semiconductor layer 212, a second photoelectric conversion layer 211, a second intrinsic semiconductor layer 213, a second conductivity type semiconductor layer 215, and a second transparent electrode layer 217.

[0176] Next, the first collector 22 is formed on the second-A electrode 113A. Here, the first collector 22 is formed along a surface (also referred to as a 15th surface) of the second-A electrode 113A opposite to the second carrier transport layer 1123. The 15th surface may be, for example, a surface (also referred to as an upper surface) of the second-A electrode 113A that is along the upper XY plane. The first collector 22 can be formed, for example, by applying a metal paste as a coating liquid onto the second-A electrode 113A by screen printing or the like, and then drying and solidifying the applied metal paste.

[0177] Next, the second collector electrode 23 is formed on the second transparent electrode layer 217. Here, the second collector electrode 23 is formed along a surface (also referred to as a 16th surface) of the second transparent electrode layer 217 opposite the second conductivity-type semiconductor layer 215. The 16th surface may be, for example, a surface (also referred to as a lower surface) of the second transparent electrode layer 217 along the XY plane on the lower side. The second collector electrode 23 may be formed, for example, by applying a metal paste as a coating liquid onto the second transparent electrode layer 217 by screen printing or the like, and then drying and solidifying the applied metal paste. This allows the first solar cell 30 to be produced. Here, when a third solar cell module 3 including a plurality of first solar cell cells 30 is manufactured, the plurality of first solar cell cells 30 may be electrically connected by a plurality of wiring members 4.

[0178] Next, covering portion 12 is formed to cover the entire periphery of first solar cell 30. Here, for example, when there are a plurality of first solar cell cells 30 electrically connected by a plurality of wiring members 4, covering portion 12 may be formed to cover the entire periphery of the plurality of first solar cell cells 30 electrically connected by a plurality of wiring members 4. Here, covering portion 12 may be formed to cover the plurality of wiring members 4 and portions of the plurality of first solar cell cells 30 other than the portions to which the plurality of wiring members 4 are connected. However, a mask or the like may be used for the portions of the plurality of wiring members 4 that are drawn out to the outside of third solar cell module 3, and covering portion 12 may not be formed thereon.

[0179] The first coating layer 121 of the coating unit 12 can be formed by, for example, sputtering, vacuum deposition, or chemical vapor deposition. When the coating unit 12 includes the first intermediate layer 122, the first intermediate layer 122 can be formed by, for example, sputtering, vacuum deposition, or chemical vapor deposition. Here, for example, with sputtering, vacuum deposition, or chemical vapor deposition, a coating of the material to be formed is formed by depositing the material to be formed on the first solar cell 30 (e.g., the first photoelectric conversion unit 31). When the coating unit 12 includes the second coating layer 123, the second coating layer 123 can be formed by, for example, sequentially applying a solution in which the material of the second coating layer 123 is dissolved in a solvent and then drying the solution by heating. Furthermore, when the second coating layer 123 is located at the outermost part of the coating portion 12, it may be formed by placing a resin sheet that forms the base of the second coating layer 123 and heating it using the lamination process described below.

[0180] For example, a terminal box 15 for extracting electricity obtained by photoelectric conversion in the first solar cell 30 is attached to one surface of the second base material 14. At this time, wiring for extracting electricity from the first solar cell 30 is arranged appropriately. The one surface of the second base material 14 may be the surface of the second base material 14 that is located on the opposite side of the first base material 10 in the state of the third solar cell module 3.

[0181] For example, the first substrate 10, the first sealing material 131, the first solar cell 30 covered with the covering 12, the second sealing material 132, and the second substrate 14 are stacked in this order and then laminated. Here, for example, a laminator is used to integrate the first substrate 10, the first sealing material 131, the first solar cell 30 covered with the covering 12, the second sealing material 132, and the second substrate 14. This allows the third solar cell module 3 to be fabricated. It is possible that, for example, there are multiple first solar cells 30 electrically connected by multiple wiring members 4 covered with the covering 12. In this case, the first solar cell 30 covered with the covering 12 may be replaced with multiple first solar cells 30 electrically connected by multiple wiring members 4 covered with the covering 12. This allows the third solar cell module 3 including multiple first solar cells 30 to be fabricated.

[0182] 5. Other Embodiments In the present disclosure, the drawings referred to in the description of various embodiments are schematic drawings, and the dimensional ratios of various structures in these schematic drawings do not necessarily correspond to the dimensional ratios of various actual configurations according to various embodiments.

[0183] In this disclosure, various embodiments have been described with reference to various drawings and by providing various examples, but are not limited thereto. Those skilled in the art may make various modifications and / or alterations based on this disclosure. Therefore, these various modifications and / or alterations are within the scope of this disclosure. For example, those skilled in the art may rearrange the functions of each component in a logically consistent manner. Furthermore, for example, those skilled in the art may combine multiple components into one or divide one component into multiple components.

[0184] Furthermore, the present disclosure is not limited to the exact implementation of the various embodiments described above. Where appropriate, some features of the various embodiments may be combined, or some features of the various embodiments may be omitted. All constituent elements, methods, and / or steps of the processes described in the present disclosure may be combined in any combination, except for combinations in which these features are mutually exclusive. Furthermore, unless expressly denied, each of the various features described in the present disclosure may be replaced with an alternative feature serving the same, substantially the same, similar, or similar purpose. Therefore, unless expressly denied, each of the various features described in the present disclosure is merely an example of a comprehensive series of identical or equivalent features. In other words, the present disclosure is not limited to the specific configuration of any of the above-described embodiments. For example, the present disclosure may extend to all novel features described in the present disclosure and / or any or all combinations of all novel features. For example, the present disclosure may also extend to all novel methods and / or any or all combinations of all novel methods described herein. For example, the present disclosure may also extend to all novel process steps and / or any or all combinations of all novel process steps described herein.

[0185] 1 First solar cell module 4 Wiring material 10 First base material 11, 30 First solar cell 111 First electrode portion 112, 31 First photoelectric conversion portion 1122 First photoelectric conversion layer 113 Second electrode portion 12 Covering portion 121 First covering layer 122 First intermediate layer 123 Second covering layer 13 Sealing material 131 First sealing material 132 Second sealing material 14 Second base material 2 Second solar cell module 20 Second solar cell 21 Second photoelectric conversion portion 22 First collector electrode portion 23 Second collector electrode portion 3 Third solar cell module 31 First photoelectric conversion portion T1 First thickness T2 Second thickness T3 Third thickness T4 Fourth thickness

Claims

1. A solar cell module comprising: a first photoelectric conversion section containing a compound having a perovskite structure; a covering section covering at least a portion of the first photoelectric conversion section; and a sealing material covering the covering section, wherein the sealing material includes a first sealing material, the material of the first sealing material having a chemical structure that generates free acid, and the covering section includes a first coating layer, and the first coating layer includes an inorganic material that has acid barrier properties.

2. The solar cell module according to claim 1, comprising a first electrode portion and a second electrode portion, wherein at least a portion of the first photoelectric conversion portion is located between the first electrode portion and the second electrode portion, and the covering portion covers the second electrode portion.

3. The solar cell module according to claim 2, wherein the covering portion covers the first electrode portion.

4. The solar cell module described in claim 3, wherein the first photoelectric conversion unit has a first photoelectric conversion layer containing a compound having a perovskite structure and a second photoelectric conversion layer, the first photoelectric conversion layer and the second photoelectric conversion layer are aligned in a first direction, and the band gap of the second photoelectric conversion layer is smaller than the band gap of the first photoelectric conversion layer.

5. A solar cell module as described in claim 4, wherein, when a direction perpendicular to the first direction is defined as a second direction, a first thickness, which is the thickness in the second direction of a portion of the covering portion located on the second direction side of the first photoelectric conversion layer, is greater than a second thickness, which is the thickness in the second direction of a portion of the covering portion located on the second direction side of the second photoelectric conversion layer.

6. A solar cell module as described in claim 4 or claim 5, wherein a third thickness, which is the thickness in the first direction of a portion of the covering portion located on the side opposite to the first direction of the first photoelectric conversion portion, is greater than a fourth thickness, which is the thickness in the first direction of a portion of the covering portion located on the first direction side of the first photoelectric conversion portion.

7. The solar cell module according to claim 1 or claim 2, further comprising a second photoelectric conversion unit, wherein the first sealing material is located between the covering unit and the second photoelectric conversion unit, the first photoelectric conversion unit has a first photoelectric conversion layer containing a compound having a perovskite structure, and the second photoelectric conversion unit has a second photoelectric conversion layer, and the band gap of the second photoelectric conversion layer is smaller than the band gap of the first photoelectric conversion layer.

8. The solar cell module according to claim 7, comprising a first substrate and a second substrate having light-transmitting properties, wherein the first photoelectric conversion section and the second photoelectric conversion section are located between the first substrate and the second substrate, the sealing material includes a second sealing material located between the second photoelectric conversion section and the second substrate, each of the first sealing material and the second sealing material includes an acid acceptor that captures acid, and the concentration of the acid acceptor in the second sealing material is lower than the concentration of the acid acceptor in the first sealing material.

9. A solar cell module according to any one of claims 1 to 8, wherein the covering portion further includes a first intermediate layer, and the first intermediate layer has barrier properties against water molecules.

10. The solar cell module according to claim 9, wherein the first intermediate layer contains zinc oxide or tin oxide, and the first coating layer contains silicon oxide or aluminum oxide.

11. A solar cell module according to any one of claims 1 to 10, wherein the covering portion further includes a second covering layer, and the second covering layer includes polyolefin.

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