Substrate processing apparatus and method

Abstract

The present invention relates to a substrate processing apparatus and method, which prevent silicon-based deposits from being formed on the inner wall of a process chamber. A substrate processing apparatus according to an embodiment of the present invention comprises: a process chamber providing a processing space for carrying out a process on a substrate; and a controller for controlling the process on the substrate, wherein the controller allows a cleaning process and a removal process to be performed on the process chamber after a thin film deposition process is performed on the substrate, the cleaning process includes a first cleaning process using a first cleaning gas containing chlorine (Cl), and a second cleaning process in which cleaning is performed on the process chamber using a second cleaning gas containing fluorine (F), and the removal process includes a first removal process in which by-products included in the process chamber are plasma-converted together with a first removal gas containing hydrogen (H) so that chlorine is removed from the process chamber.

Description

Substrate processing device and method

[0001] The present invention relates to a substrate processing device and method, and more particularly, to a substrate processing device and method for preventing silicon component deposits from being formed on the inner wall of a process chamber.

[0002] Chemical vapor deposition (CVD) or atomic layer deposition (ALD) can be used to deposit a thin film on a substrate. In the case of chemical vapor deposition or atomic layer deposition, a thin film can be formed by a source gas causing a chemical reaction on the surface of the substrate. In particular, in the case of atomic layer deposition, since a single layer of the source gas attached to the surface of the substrate forms a thin film, it is possible to form a thin film with a thickness similar to the diameter of an atom.

[0003] To expand the processing temperature range, plasma-enhanced chemical vapor deposition (PECVD) or plasma-enhanced atomic layer deposition (PEALD) can be used. Because PECVD and PEALD can be processed at lower temperatures than chemical vapor deposition and ALD, the physical properties of the thin film can be improved.

[0004] The process gas for depositing a thin film on a substrate may include a source gas and a reaction gas. A thin film may be deposited on the substrate by injecting the reaction gas after the source gas is injected onto the substrate.

[0005] Silicon dioxide (SiO2) or silicon nitride (SiN) can be used for the deposition of oxide or nitride films. Meanwhile, the oxide or nitride films can be formed not only on the substrate but also on the inner walls of the process chamber. If the accumulated thickness of the deposit formed on the inner walls of the process chamber exceeds a certain length, changes may occur over time in the process, which may deteriorate the quality of the thin film deposited on the substrate.

[0006] Therefore, there is a need for an invention that prevents silicon component deposits from being formed on the inner wall of a process chamber even when a thin film deposition process for depositing an oxide film or a nitride film is performed.

[0007] The problem to be solved by the present invention is to provide a substrate processing device and method that prevents silicon component deposits from being formed on the inner wall of a process chamber.

[0008] The objects of the present invention are not limited to the objects mentioned above, and other objects not mentioned will be clearly understood by those skilled in the art from the description below.

[0009] In order to achieve the above object, a substrate processing device according to an embodiment of the present invention includes a process chamber providing a process processing space for a process on a substrate, and a control unit controlling the process on the substrate, wherein the control unit performs a cleaning process and a removal process on the process chamber after a thin film deposition process on the substrate is performed, and the cleaning process includes a first cleaning process in which cleaning is performed on the process chamber using a first cleaning gas containing chlorine (Cl), and a second cleaning process in which cleaning is performed on the process chamber using a second cleaning gas containing fluorine (F), and the removal process includes a first removal process in which byproducts included in the process chamber are converted into plasma together with a first removal gas containing hydrogen (H) to remove chlorine in the process chamber, and a second removal process in which byproducts included in the process chamber are converted into plasma together with a second removal gas containing oxygen (O) to remove fluorine in the process chamber, and the first cleaning process, the second cleaning process, the first removal process, and the second removal process are performed as a series of processes.

[0010] The above thin film deposition process includes a process in which a thin film of a silicon (Si) component is deposited on the substrate, the first cleaning process includes a process in which silicon injected for the thin film deposition process and chlorine included in the first cleaning gas combine to produce silicon chloride, and the second cleaning process includes a process in which silicon injected for the thin film deposition process and fluorine included in the second cleaning gas combine to produce silicon fluoride.

[0011] The above thin film deposition process includes a process in which a thin film of a silicon (Si) component is deposited on the substrate, the first removal process includes a process in which chlorine remaining in the process chamber is removed by using the first cleaning process, and the second removal process includes a process in which fluorine remaining in the process chamber is removed by using the second cleaning process.

[0012] The above cleaning process and the above removal process are performed in the order of the first cleaning process, the first removal process, the second cleaning process, and the second removal process.

[0013] The first cleaning gas has a higher etching rate than the second cleaning gas.

[0014] The first cleaning gas contains chlorine trifluoride (ClF3), and the second cleaning gas contains nitrogen trifluoride (NF3).

[0015] The substrate processing device further includes a substrate supporter that supports the substrate, and the substrate supporter can be positioned at one of a first position, which is an upper space of the process chamber, a second position, which is a central space of the process chamber, and a third position, which is a lower space of the process chamber, and the first cleaning process is performed while the substrate supporter is positioned at the first position, the second position, and the third position.

[0016] The above control unit causes the second cleaning process to be performed after the first cleaning process has been performed a preset number of times.

[0017] A substrate processing method according to an embodiment of the present invention includes a step of performing a thin film deposition process on a substrate in a process chamber, and a step of performing a cleaning process and a removal process on the process chamber, wherein the cleaning process includes a first cleaning process in which cleaning is performed on the process chamber using a first cleaning gas containing chlorine (Cl), and a second cleaning process in which cleaning is performed on the process chamber using a second cleaning gas containing fluorine (F), and wherein the removal process includes a first removal process in which byproducts contained in the process chamber are converted into plasma together with a first removal gas containing hydrogen (H) to remove chlorine in the process chamber, and a second removal process in which byproducts contained in the process chamber are converted into plasma together with a second removal gas containing oxygen (O) to remove fluorine in the process chamber, and wherein the first cleaning process, the second cleaning process, the first removal process, and the second removal process are performed as a series of processes.

[0018] The above thin film deposition process includes a process in which a thin film of a silicon (Si) component is deposited on the substrate, the first cleaning process includes a process in which silicon injected for the thin film deposition process and chlorine included in the first cleaning gas combine to produce silicon chloride, and the second cleaning process includes a process in which silicon injected for the thin film deposition process and fluorine included in the second cleaning gas combine to produce silicon fluoride.

[0019] The above thin film deposition process includes a process in which a thin film of a silicon (Si) component is deposited on the substrate, the first removal process includes a process in which chlorine remaining in the process chamber is removed by using the first cleaning process, and the second removal process includes a process in which fluorine remaining in the process chamber is removed by using the second cleaning process.

[0020] The above cleaning process and the above removal process are performed in the order of the first cleaning process, the first removal process, the second cleaning process, and the second removal process.

[0021] The first cleaning gas has a higher etching rate than the second cleaning gas.

[0022] The first cleaning gas contains chlorine trifluoride (ClF3), and the second cleaning gas contains nitrogen trifluoride (NF3).

[0023] A substrate supporter for supporting the substrate is provided inside the process chamber, and the substrate supporter can be positioned at one of a first position, which is an upper space of the process chamber, a second position, which is a central space of the process chamber, and a third position, which is a lower space of the process chamber, and the first cleaning process is performed while the substrate supporter is positioned at the first position, the second position, and the third position.

[0024] The second cleaning process is performed after the first cleaning process is performed a preset number of times.

[0025] Specific details of other embodiments are included in the detailed description and drawings.

[0026] According to the substrate processing device and method of the present invention as described above, even if a thin film deposition process for depositing an oxide film or a nitride film is performed, a silicon component deposit is not formed on the inner wall of the process chamber, so there is an advantage of improving the quality of the thin film deposited on the substrate.

[0027] The effects of the present invention are not limited to the effects mentioned above, and other effects not mentioned will be clearly understood by those skilled in the art from the description of the claims.

[0028] FIG. 1 is a drawing showing a substrate processing device according to an embodiment of the present invention.

[0029] Figure 2 is a drawing showing the substrate support member being positioned at a second position.

[0030] Figure 3 is a drawing showing the substrate support member being positioned at the third position.

[0031] Figure 4 is a drawing showing that a deposit has been formed in a process chamber.

[0032] Figure 5 is a diagram showing the etching rates of the first cleaning gas and the second cleaning gas.

[0033] Figure 6 is a drawing for explaining the difference in electronegativity between the deposit formed in the process chamber and the components of the cleaning gas.

[0034] Figure 7 is a drawing for explaining that the process chamber is cleaned using the first cleaning gas.

[0035] Figure 8 is a drawing for explaining that a first removal gas is used to remove a portion of the first byproduct.

[0036] Figure 9 is a drawing for explaining that a process chamber is cleaned using a second cleaning gas.

[0037] Figure 10 is a drawing illustrating that a second removal gas is used to remove another portion of the first by-product and the second by-product.

[0038] Figure 11 is a flowchart showing a substrate processing method according to an embodiment of the present invention.

[0039] Figure 12 is a flow chart showing the first cleaning process.

[0040] Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the attached drawings. The advantages and features of the present invention, and methods for achieving them, will become clear with reference to the embodiments described in detail below together with the attached drawings. However, the present invention is not limited to the embodiments disclosed below, but can be implemented in various different forms. These embodiments are provided only to ensure that the disclosure of the present invention is complete and to fully inform those skilled in the art of the scope of the invention, and the present invention is defined only by the scope of the claims. Like reference numerals refer to like elements throughout the specification.

[0041] Unless otherwise defined, all terms (including technical and scientific terms) used herein may be used in their common sense to those of ordinary skill in the art to which the present invention pertains. Furthermore, terms defined in commonly used dictionaries are not to be interpreted ideally or excessively unless explicitly and specifically defined otherwise.

[0042] FIG. 1 is a drawing showing a substrate processing device according to an embodiment of the present invention, FIG. 2 is a drawing showing a substrate supporter positioned at a second position, FIG. 3 is a drawing showing a substrate supporter positioned at a third position, and FIG. 4 is a drawing showing a deposit formed in a process chamber.

[0043] Referring to FIGS. 1 to 3, a substrate processing device (10) according to an embodiment of the present invention is configured to include a process chamber (100), a substrate support unit (200), an elevation unit (300), a gas supply unit (400), a gas injection unit (500), a power supply unit (600), and a control unit (700).

[0044] The substrate processing device (10) according to an embodiment of the present invention can deposit a thin film on a substrate (W). Specifically, the substrate processing device (10) can deposit a thin film on the substrate (W) using plasma enhanced chemical vapor deposition (PECVD) or plasma enhanced atomic layer deposition (PEALD). Alternatively, the substrate processing device (10) can deposit a thin film on the substrate (W) using chemical vapor deposition (CVD) or atomic layer deposition (ALD).

[0045] The process chamber (100) may include a chamber body (110) and a chamber lid (120). The chamber body (110) may provide a space for accommodating various components for processing a substrate (W). The chamber lid (120) may seal an upper opening of the chamber body (110). The chamber lid (120) may support a gas injection unit (500). The gas injection unit (500) may be fixed to the lower surface of the chamber lid (120).

[0046] The process chamber (100) can provide a process processing space for a substrate (W). A process processing space can be formed by combining the chamber body (110) and the chamber lid (120).

[0047] A substrate entrance (130) for entrance and exit of a substrate (W) may be formed on one side of the process chamber (100). For example, the substrate entrance (130) may be formed on one side of the chamber body (110). The substrate (W) may be introduced into or taken out of the process chamber (100) through the substrate entrance (130).

[0048] The process chamber (100) may be equipped with a shutter (140). The shutter (140) may open or close the substrate entrance (130). When the shutter (140) opens the substrate entrance (130), the substrate (W) may be loaded or unloaded through the substrate entrance (130). When a process for the substrate (W) is in progress, the shutter (140) may close the substrate entrance (130) to block the interior of the process chamber (100) from the exterior.

[0049] The substrate support (200) can provide a mounting surface on which a substrate (W) can be mounted. A process can be performed on the substrate (W) mounted on the mounting surface of the substrate support (200). The substrate support (200) can heat the substrate (W). To this end, a heater (not shown) can be provided inside the substrate support (200). Heat emitted from the heater can be transferred to the substrate (W) through the body of the substrate support (200). The heater can serve as an electrode for forming an electric field. As described below, when RF power is supplied to the showerhead (520), an electric field can be formed between the showerhead (520) and the heater.

[0050] The lifting unit (300) can generate a driving force to move the substrate support unit (200) in the up-and-down direction. The internal space of the process chamber (100) can include an upper space, a central space, and a lower space. The substrate support unit (200) can be arranged at a first position corresponding to the upper space of the process chamber (100), a second position corresponding to the central space of the process chamber (100), or a third position corresponding to the lower space of the process chamber (100).

[0051] Fig. 1 illustrates that the substrate support (200) is arranged at a first position, Fig. 2 illustrates that the substrate support (200) is arranged at a second position, and Fig. 3 illustrates that the substrate support (200) is arranged at a third position. With the substrate support (200) arranged at the first position, a thin film deposition process for the substrate (W) is performed, with the substrate support (200) arranged at the second position, the substrate (W) is loaded and unloaded through the substrate entrance (130), and with the substrate support (200) arranged at the third position, a cleaning process for the interior of the process chamber (100) can be performed.

[0052] The gas supply unit (400) serves to supply process gas to the process chamber (100). Specifically, the gas supply unit (400) can supply process gas to the gas injection unit (500) provided in the process chamber (100). A gas transfer line (410) can be connected to the gas supply unit (400). A plurality of gas transfer lines (410) can be provided, and the plurality of gas transfer lines (410) can provide transfer paths for different process gases.

[0053] The gas injection unit (500) serves to inject process gas to the substrate (W). The gas injection unit (500) is configured to include a diffusion unit (510) and a showerhead (520). The diffusion unit (510) serves to provide a diffusion space (530) for the process gas supplied to the process chamber (100). By combining the diffusion unit (510) and the showerhead (520), a diffusion space (530) can be formed between the diffusion unit (510) and the showerhead (520). In addition, the diffusion unit (510) can diffuse the process gas supplied from the gas supply unit (400) and supply it to the diffusion space (530). For example, the diffusion unit (510) can supply the process gas to a plurality of different points in the diffusion space (530).

[0054] The showerhead (520) is coupled to the diffusion unit (510) and serves to inject the process gas diffused in the diffusion space (530). The showerhead (520) can inject the process gas with a uniform distribution over the entire surface area of ​​the substrate (W). In the present invention, the process gas may include a source gas, a source purge gas, a reaction gas, and a reaction purge gas. The source gas, the source purge gas, the reaction gas, and the reaction purge gas may be sequentially injected from the showerhead (520), or at least some of them may be injected simultaneously. The source gas and the reaction gas may collide with each other and react after being injected from the showerhead (520). Then, the source gas activated by the reaction gas may contact the substrate (W) to perform a process treatment on the substrate (W). For example, the activated source gas may be deposited as a thin film on the substrate (W).

[0055] Additionally, in the present invention, the process gas may include a first cleaning gas, a first removal gas, a second cleaning gas, and a second removal gas, which will be described later. The first cleaning gas, the first removal gas, the second cleaning gas, and the second removal gas may be injected into the interior of the process chamber (100) through the showerhead (520).

[0056] The showerhead (520) may be provided with a plurality of injection holes (540) for injection of process gas. The plurality of injection holes (540) may be distributed over a certain range of the showerhead (520).

[0057] The power supply unit (600) can supply RF power for generating plasma to the process chamber (100). Specifically, the power supply unit (600) can supply RF power to the showerhead (520). The showerhead (520) may have a separate electrode plate (not shown) that receives RF power, or may serve as an electrode that receives RF power on its own. As described above, the substrate support unit (200) may include a heater that serves as an electrode. When RF power is supplied to the showerhead (520), an electric field may be formed between the showerhead (520) and the heater of the substrate support unit (200). The electric field formed by the supply of RF power converts the process gas introduced into the process chamber (100) into particles in a plasma state, and the plasma particles react with the surface of the substrate (W) so that a process treatment can be performed on the substrate (W).

[0058] The process chamber (100) may be equipped with an exhaust port (150). The exhaust port (150) may be disposed on the inner lower surface of the chamber body (110). For example, the exhaust port (150) may be disposed in an area vertically overlapping the substrate support (200) to effectively discharge process byproducts. Meanwhile, the exhaust port (150) being disposed on the inner lower surface of the chamber body (110) is exemplary, and according to some embodiments of the present invention, the exhaust port (150) may be disposed on the inner side surface of the chamber body (110). For example, when the substrate support (200) is raised to the first position, the exhaust port (150) may be disposed in an area between the substrate support (200) and the gas injection unit (500). Hereinafter, the case where the exhaust port (150) is disposed on the inner lower surface of the chamber body (110) will be mainly described.

[0059] The exhaust port (150) may provide an exhaust path for process byproducts. Here, the process byproducts may include all substances that must be exhausted from the process chamber (100), such as remaining gases from the process gas supplied to the process chamber (100) that are not used for forming a thin film. For example, the process byproducts may include source gas, reaction gas, source purge gas, and reaction purge gas.

[0060] An exhaust line (160) may be connected to the exhaust port (150). The exhaust line (160) may provide a transport path for process byproducts introduced through the exhaust port (150). An exhaust pump (170) may be provided in the exhaust line (160). The exhaust pump (170) may pressurize the internal space of the exhaust line (160) so that process byproducts introduced into the exhaust port (150) may be transported through the exhaust line (160). Process byproducts transported through the exhaust line (160) may be discharged from the process chamber (100).

[0061] The control unit (700) can perform overall control of the substrate processing device (10). For example, the control unit (700) can operate the shutter (140) to open and close the substrate entrance (130), or control the lifting unit (300) to move the substrate support unit (200). In addition, the control unit (700) can control the supply of RF power by the power supply unit (600) or the supply of process gas to the process chamber (100).

[0062] Additionally, the control unit (700) can control a process for the substrate (W). Specifically, the control unit (700) can cause a cleaning process and a removal process for the process chamber (100) to be performed after a thin film deposition process for the substrate (W) is performed.

[0063] In the present invention, a thin film deposition process for a substrate (W) may include a process of depositing a thin film of a silicon (Si) component on the substrate (W). Here, the thin film may be an oxide film or a nitride film. Silicon dioxide (SiO2) or silicon nitride (SiN) may be used for the deposition of the oxide film or the nitride film. Meanwhile, the oxide film or the nitride film may be formed not only on the substrate (W) but also on the inner wall of the process chamber (100). Hereinafter, the oxide film or the nitride film formed on the inner wall of the process chamber (100) is referred to as a deposit. Fig. 4 illustrates that a deposit (800) is formed on the inner wall of the process chamber (100). If the cumulative thickness of the deposit (800) formed on the inner wall of the process chamber (100) exceeds a certain length, a change may occur over time during the process, which may deteriorate the quality of the thin film deposited on the substrate (W).

[0064] The control unit (700) can cause a cleaning process to be performed on the process chamber (100) after the thin film deposition process on the substrate (W) is performed, thereby removing the deposit (800) formed on the inner wall of the process chamber (100). As the deposit (800) is removed, a deterioration in the quality of the thin film due to the subsequent thin film deposition process can be prevented.

[0065] The cleaning process may include a first cleaning process and a second cleaning process. The first cleaning process may be performed using a first cleaning gas, and the second cleaning process may be performed using a second cleaning gas. Here, the second cleaning gas may be different from the first cleaning gas. For example, the first cleaning process may be performed using a first cleaning gas containing chlorine (Cl) to clean the process chamber (100), and the second cleaning process may be performed using a second cleaning gas containing fluorine (F) to clean the process chamber (100). That is, the control unit (700) sequentially uses different cleaning gases to perform cleaning on the process chamber (100).

[0066] Byproducts may be formed during the cleaning process. These byproducts may deteriorate the quality of the thin film deposited on the substrate (W) during a subsequent thin film deposition process. The control unit (700) may perform a removal process to remove byproducts generated during the cleaning process from the process chamber (100).

[0067] The removal process may include a first removal process and a second removal process. The first removal process refers to a process in which a first removal gas is used to remove a portion of the first byproduct generated during the first cleaning process, and the second removal process refers to a process in which a second removal gas is used to remove another portion of the first byproduct and the second byproduct generated during the second cleaning process. The first removal process may be performed after the first cleaning process is completed, and the second removal process may be performed after the second cleaning process is completed. That is, the cleaning process and the removal process may be performed in the order of the first cleaning process, the first removal process, the second cleaning process, and the second removal process, and the first cleaning process, the second cleaning process, the first removal process, and the second removal process may be performed as a series of processes. That is, the cleaning process and the removal process may be performed continuously, and no other process may intervene between the cleaning process and the removal process. Byproducts may be removed from the process chamber (100) through the first removal process and the second removal process. As a series of cleaning and removal processes are performed, nucleation pretreatment for subsequent thin film deposition processes can be performed.

[0068] The control unit (700) can supply RF power to the process chamber (100) during the removal process to convert the first byproduct, the second byproduct, the first removal gas, and the second removal gas into plasma. As the byproduct and the removal gas are mutually combined in a plasma state, the time of the removal process can be shortened, and the removal efficiency of the byproduct can be improved.

[0069] FIG. 5 is a drawing showing the etching rates of the first cleaning gas and the second cleaning gas, and FIG. 6 is a drawing for explaining the difference in electronegativity between the components of the cleaning gas and the deposit (800) formed in the process chamber.

[0070] Referring to FIG. 5, the first cleaning gas may have a higher etching rate than the second cleaning gas.

[0071] The first cleaning gas may contain a component having a greater difference in electronegativity from silicon (Si) included in the deposit (800) compared to the second cleaning gas.

[0072] In the present invention, the first cleaning gas may include chlorine trifluoride (ClF3), and the second cleaning gas may include nitrogen trifluoride (NF3). Chlorine trifluoride (ClF3) may include fluorine (F) and chlorine (Cl), and nitrogen trifluoride (NF3) may include fluorine (F) and nitrogen (N). As described above, the deposit (800) in the present invention may be an oxide film or a nitride film of a silicon (Si) component. Silicon (Si) may be etched from the deposit (800) by being combined with fluorine (F) included in the first cleaning gas or the second cleaning gas.

[0073] Referring to FIG. 6, the deposit (800) may include silicon (Si).

[0074] The electronegativity of silicon (Si) is 1.90, the electronegativity of chlorine (Cl) is 3.16, and the electronegativity of nitrogen (N) is 3.04. In this case, the electronegativity difference between silicon (Si) and chlorine (Cl) may be 1.26, and the electronegativity difference between silicon (Si) and nitrogen (N) may be 1.14. Since the electronegativity difference between chlorine (Cl) and silicon (Si) included in the first cleaning gas is formed to be greater than the electronegativity difference between nitrogen (N) and silicon (Si) included in the second cleaning gas, the bonding between chlorine (Cl) and silicon (Si) is performed more actively than that between nitrogen (N), and the etching rate of the first cleaning gas may be formed to be greater than the etching rate of the second cleaning gas.

[0075] If a cleaning process for the process chamber (100) is performed using only the first cleaning gas having an excessively high etching rate, corrosion of the inner wall of the process chamber (100) and various components provided in the process chamber (100) may occur. To prevent corrosion of the inner wall of the process chamber (100) and components, the first cleaning gas and the second cleaning gas may be used in combination. By using the first cleaning gas having a relatively high etching rate, the time required for the overall cleaning process is shortened, and by using the second cleaning gas having a relatively low etching rate, corrosion of the inner wall of the process chamber (100) and components may be prevented.

[0076] FIG. 7 is a drawing for explaining that a process chamber is cleaned using a first cleaning gas, FIG. 8 is a drawing for explaining that a part of a first byproduct is removed using a first removal gas, FIG. 9 is a drawing for explaining that a process chamber is cleaned using a second cleaning gas, and FIG. 10 is a drawing for explaining that a part of a first byproduct and a second byproduct are removed using a second removal gas.

[0077] Referring to FIG. 7, a process chamber (100) in which a silicon component deposit (800) is formed can be cleaned using a first cleaning gas.

[0078] The first cleaning gas is chlorine trifluoride (ClF3), which may include fluorine (F) and chlorine (Cl). Fluorine (F) and chlorine (Cl) may be bonded to silicon (Si) included in the deposit (800). Specifically, one silicon (Si) and four fluorines (F) may be bonded to form silicon tetrafluoride (SiF4), and one silicon (Si) and four chlorines (Cl) may be bonded to form silicon tetrachloride (SiCl4). Silicon (Si) may be discharged from the process chamber (100) in the form of silicon tetrafluoride (SiF4) and silicon tetrachloride (SiCl4).

[0079] Fluorine (F) and chlorine (Cl) that are not bonded to silicon (Si) may float in the internal space of the process chamber (100) or be included in the deposit (800). If fluorine (F) or chlorine (Cl) remains inside the process chamber (100), the quality of the thin film deposited on the substrate (W) may deteriorate depending on the subsequent thin film deposition process. Chlorine (Cl) may be removed through the first removal process described below, and fluorine (F) may be removed through the second removal process described below.

[0080] Referring to FIG. 8, a portion of the first byproduct generated during the first cleaning process can be removed using the first removal gas.

[0081] A portion of the first byproduct may include chlorine (Cl). The first removal gas may include hydrogen (H). After the first cleaning process is performed, the first removal gas may be injected into the process chamber (100) to perform the first removal process. Chlorine (Cl), which is a portion of the first byproduct, and hydrogen (H), which is the first removal gas, may combine to form hydrogen chloride (HCl). To activate the combination between chlorine (Cl) and hydrogen (H), the control unit (700) may control the power supply unit (600) to supply RF power to the process chamber (100). Chlorine (Cl) and hydrogen (H) in a plasma state may combine to form hydrogen chloride (HCl). Chlorine (Cl) may be discharged from the process chamber (100) in the form of hydrogen chloride (HCl).

[0082] Referring to FIG. 9, a process chamber (100) in which a silicon component deposit (800) is formed can be cleaned using a second cleaning gas.

[0083] After the first cleaning process is performed, a second cleaning process may be performed. The second cleaning gas may be nitrogen trifluoride (NF3), which may include fluorine (F) and nitrogen (N). Fluorine (F) may be bonded to silicon (Si) included in the deposit (800). Specifically, one silicon (Si) and four fluorines (F) may be bonded to form silicon tetrafluoride (SiF4). Silicon (Si) may be discharged from the process chamber (100) in the form of silicon tetrafluoride (SiF4).

[0084] Nitrogen (N) can be combined with silicon (Si) and used to form a nitride film. To prevent the formation of a nitride film, it is preferable to remove nitrogen (N) from the process chamber (100).

[0085] Referring to FIG. 10, another portion of the first byproduct generated during the first cleaning process and the second byproduct generated during the second cleaning process can be removed using a second removal gas.

[0086] Another part of the first byproduct may include fluorine (F), and the second byproduct may include fluorine (F) and nitrogen (N). The second removal gas may include oxygen (O). After the second cleaning process is performed, the second removal gas may be injected into the process chamber (100) to perform the second removal process. Fluorine (F), another part of the first byproduct, and oxygen (O), which is the second removal gas, may combine to form oxygen fluoride (OF or O2F2). In addition, fluorine (F) among the second byproducts and oxygen (O), which is the second removal gas, may combine to form oxygen fluoride (OF or O2F2). Nitrogen (N) among the second byproducts and oxygen (O), which is the second removal gas, may combine to form nitric oxide (NO or NO2).

[0087] In order to activate the bonding between fluorine (F) and oxygen (O) and the bonding between nitrogen (N) and oxygen (O), the control unit (700) can control the power supply unit (600) to supply RF power to the process chamber (100). Fluorine (F) and oxygen (O) in a plasma state can combine to form oxygen fluoride (OF or O2F2), and nitrogen (N) and oxygen (O) in a plasma state can combine to form nitric oxide (NO or NO2). Fluorine (F) can be discharged from the process chamber (100) in the form of oxygen fluoride (OF or O2F2), and nitrogen (N) can be discharged from the process chamber (100) in the form of nitric oxide (NO or NO2).

[0088] Figure 11 is a flowchart showing a substrate processing method according to an embodiment of the present invention.

[0089] Referring to FIG. 11, a substrate processing method according to an embodiment of the present invention may include a thin film deposition process (S910), a first cleaning process (S920), a first removal process (S930), a second cleaning process (S940), and a second removal process (S950).

[0090] A thin film deposition process can be performed on a substrate (W) (S910). In the present invention, the thin film deposited on the substrate (W) may be an oxide film or a nitride film of a silicon (Si) component.

[0091] After the thin film deposition process is completed and the substrate is removed from the process chamber (100), a first cleaning process may be performed (S920). For the first cleaning process, a first cleaning gas may be injected into the process chamber (100). The first cleaning gas may include chlorine trifluoride (ClF3). The first cleaning gas may bind to silicon (Si) included in the deposit (800) to etch the silicon (Si) in the deposit (800).

[0092] After the first cleaning process is completed, a first removal process may be performed (S930). For the first removal process, a first removal gas may be injected into the process chamber (100). The first removal gas may include hydrogen (H). The first removal gas may be combined with a first byproduct generated during the first cleaning process and used to remove the first byproduct in the process chamber (100). The first byproduct combined with the first removal gas may be chlorine (Cl). To shorten the time of the first removal process and improve the removal efficiency, RF power may be supplied to the process chamber (100) so that the first byproduct and the first removal gas may be converted into plasma. The magnitude of the RF power supplied for the first removal process may be less than 300 W, the process time may be less than 60 seconds, and the purge time may be less than 100 seconds.

[0093] After the first removal process is completed, a second cleaning process may be performed (S940). For the second cleaning process, a second cleaning gas may be injected into the process chamber (100). The second cleaning gas may include nitrogen trifluoride (NF3). The second cleaning gas may be combined with silicon (Si) included in the deposit (800) to etch the silicon (Si) in the deposit (800). The process time of the second cleaning process may be 120 to 230 seconds, the process pressure may be 2.2 to 3.5 Torr, and the gap between the showerhead (520) and the substrate support (200) may be 8 to 15 mm.

[0094] After the second cleaning process is completed, a second removal process may be performed (S950). For the second removal process, a second removal gas may be injected into the process chamber (100). The second removal gas may include oxygen (O). The second removal gas may be combined with a first byproduct generated during the first cleaning process and a second byproduct generated during the second cleaning process, and may be used to remove the first and second byproducts in the process chamber (100). The first byproduct combined with the second removal gas may be fluorine (F), and the second byproducts combined with the second removal gas may be fluorine (F) and nitrogen (N). In order to shorten the time of the second removal process and improve the removal efficiency, RF power may be supplied to the process chamber (100) so that the first byproduct, the second byproduct, and the second removal gas may be converted into plasma. The magnitude of the RF power supplied for the second removal process may be less than 400 W, the process time may be less than 60 seconds, and the purge time may be less than 50 seconds.

[0095] The substances generated during the first cleaning process, the second cleaning process, the first removal process, and the second removal process can be continuously discharged from the process chamber (100) through the exhaust port (150).

[0096] Figure 12 is a flow chart showing the first cleaning process.

[0097] Referring to FIG. 12, the first cleaning process can be performed in a state where the substrate support (200) is positioned at the first position, the second position, and the third position (S921, S922, S923).

[0098] During the first cleaning process, RF power may be supplied to the process chamber (100) to convert the first cleaning gas into plasma. As the first cleaning gas is converted into plasma, the bonding between the silicon (Si) contained in the deposit (800) and the first cleaning gas is performed more smoothly, and the time of the first cleaning process may be shortened.

[0099] An electric field for plasma conversion may be formed between the showerhead (520) and the substrate support (200). The strength of the electric field may vary depending on the distance between the showerhead (520) and the substrate support (200). When the substrate support (200) is positioned at the first position, plasma conversion is performed by a relatively high electric field, thereby improving the efficiency of the first cleaning process. On the other hand, since the electric field is formed between the showerhead (520) and the substrate support (200), plasma conversion for the first cleaning gas existing in a space outside the space between the showerhead (520) and the substrate support (200) may not be easily performed. Accordingly, the first cleaning process may be performed while the substrate support (200) is positionally changed from the first position to the third position in order to clean the deposit (800) distributed over the entire area of ​​the process chamber (100). For example, a first cleaning process may be performed with the substrate support (200) positioned at a first position (S921), then a first cleaning process may be performed with the substrate support (200) positioned at a second position (S922), and then a first cleaning process may be performed with the substrate support (200) positioned at a third position (S923).

[0100] The process time of the first cleaning process performed in a state where the substrate support (200) is arranged at the first position may be 120 to 230 seconds, the process pressure may be 2.2 to 3.5 Torr, and the gap between the showerhead (520) and the substrate support (200) may be 8 to 15 mm. The process time of the first cleaning process performed in a state where the substrate support (200) is arranged at the second position may be 80 to 150 seconds, the process pressure may be 1.8 to 2.3 Torr, and the gap between the showerhead (520) and the substrate support (200) may be 35 to 48 mm. The process time of the first cleaning process performed in a state where the substrate support (200) is arranged at the third position may be 80 to 120 seconds, the process pressure may be 1.8 to 2.2 Torr, and the gap between the showerhead (520) and the substrate support (200) may be 50 to 90 mm.

[0101] Meanwhile, the first cleaning process is performed while the substrate support member (200) is sequentially positioned to the first position, the second position, and the third position, which is exemplary, and the first cleaning process may be performed through various position change patterns of the substrate support member (200). For example, the first cleaning process may be performed while the substrate support member (200) is sequentially positioned to the third position, the second position, and the first position.

[0102] The control unit (700) may cause the second cleaning process to be performed after the first cleaning process has been performed a preset number of times. If the first cleaning process is performed for an excessively long time, corrosion of the inner wall of the chamber (100) and various components provided in the process chamber (100) may occur. Therefore, the first cleaning process may be repeated several times in a relatively short time. The number of times the first cleaning process is performed may be determined experimentally.

[0103] Although the embodiments of the present invention have been described above with reference to the accompanying drawings, those skilled in the art will appreciate that the present invention can be implemented in other specific forms without altering the technical concept or essential features thereof. Therefore, the embodiments described above should be understood to be illustrative in all respects and not restrictive.

Claims

1. A process chamber that provides a process processing space for a process on a substrate; and Including a control unit that controls a process for the above substrate, The above control unit causes a cleaning process and a removal process to be performed on the process chamber after a thin film deposition process is performed on the substrate, The above cleaning process is, A first cleaning process in which cleaning is performed on the process chamber using a first cleaning gas containing chlorine (Cl); and A second cleaning process is included in which cleaning is performed on the process chamber using a second cleaning gas containing fluorine (F). The above removal process is, A first removal process in which byproducts contained in the process chamber are plasma-converted together with a first removal gas containing hydrogen (H) to remove chlorine from the process chamber; and A substrate processing device comprising a second removal process in which byproducts contained in the process chamber are plasma converted together with a second removal gas containing oxygen (O) to remove fluorine from the process chamber, wherein the first cleaning process, the second cleaning process, the first removal process, and the second removal process are included and performed in a series of processes.

2. In paragraph 1, The above thin film deposition process includes a process in which a thin film of silicon (Si) component is deposited on the substrate, The above first cleaning process includes a process in which silicon injected for the thin film deposition process and chlorine included in the first cleaning gas are combined to produce silicon chloride. A substrate processing device including a process in which the second cleaning process is performed to generate silicon fluoride by combining silicon injected for the thin film deposition process with fluorine contained in the second cleaning gas.

3. In paragraph 1, The above thin film deposition process includes a process in which a thin film of silicon (Si) component is deposited on the substrate, The above first removal process includes a process in which chlorine remaining in the process chamber is removed by use in the above first cleaning process, A substrate processing device including a process in which the second removal process is used in the second cleaning process to remove fluorine remaining in the process chamber.

4. In paragraph 1, A substrate processing device in which the above cleaning process and the above removal process are performed in the order of the first cleaning process, the first removal process, the second cleaning process, and the second removal process.

5. In paragraph 1, A substrate processing device wherein the first cleaning gas has a higher etching rate than the second cleaning gas.

6. In paragraph 1, The above first cleaning gas contains chlorine trifluoride (ClF3), A substrate processing device wherein the second cleaning gas includes nitrogen trifluoride (NF3).

7. In paragraph 1, Further comprising a substrate support member supporting the above substrate, The above substrate support part, A first position, which is the upper space of the process chamber; a second location which is the central space of the process chamber; and It can be placed in one of the third positions, which is the lower space of the above process chamber, A substrate processing device in which the above first cleaning process is performed while the substrate support is positioned at the first position, the second position, and the third position.

8. In paragraph 1, A substrate processing device in which the control unit causes the second cleaning process to be performed after the first cleaning process has been performed a preset number of times.

9. A step in which a thin film deposition process is performed on a substrate in a process chamber; and Including a step of performing a cleaning process and a removal process for the above process chamber, The above cleaning process is, A first cleaning process in which cleaning is performed on the process chamber using a first cleaning gas containing chlorine (Cl); and A second cleaning process is included in which cleaning is performed on the process chamber using a second cleaning gas containing fluorine (F). The above removal process is, A first removal process in which byproducts contained in the process chamber are plasma-converted together with a first removal gas containing hydrogen (H) to remove chlorine from the process chamber; and A second removal process is included in the process chamber, in which byproducts are plasma converted together with a second removal gas containing oxygen (O) to remove fluorine from the process chamber. A substrate processing method in which the first cleaning process, the second cleaning process, the first removal process, and the second removal process are included in a series of processes and performed.

10. In paragraph 9, The above thin film deposition process includes a process in which a thin film of silicon (Si) component is deposited on the substrate, The above first cleaning process includes a process in which silicon injected for the thin film deposition process and chlorine included in the first cleaning gas are combined to produce silicon chloride. A substrate processing method including a process in which the second cleaning process is a process in which silicon injected for the thin film deposition process and fluorine included in the second cleaning gas are combined to produce silicon fluoride.

11. In paragraph 9, The above thin film deposition process includes a process in which a thin film of silicon (Si) component is deposited on the substrate, The above first removal process includes a process in which chlorine remaining in the process chamber is removed by use in the above first cleaning process, A substrate processing method including a process in which the second removal process is used in the second cleaning process to remove fluorine remaining in the process chamber.

12. In paragraph 9, A substrate processing method in which the above cleaning process and the above removal process are performed in the order of the first cleaning process, the first removal process, the second cleaning process, and the second removal process.

13. In paragraph 9, A substrate processing method wherein the first cleaning gas has a higher etching rate than the second cleaning gas.

14. In paragraph 9, The above first cleaning gas contains chlorine trifluoride (ClF3), A substrate processing method wherein the second cleaning gas comprises nitrogen trifluoride (NF3).

15. In paragraph 9, Inside the above process chamber, a substrate support member for supporting the substrate is provided, The above substrate support part, A first position, which is the upper space of the process chamber; a second location which is the central space of the process chamber; and It can be placed in one of the third positions, which is the lower space of the above process chamber, A substrate processing method in which the first cleaning process is performed while the substrate support is positioned at the first position, the second position, and the third position.

16. In paragraph 9, A substrate processing method in which the second cleaning process is performed after the first cleaning process is performed a preset number of times.

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