Structures and methods for forming 4f 2 dynamic random-access devices

The formation of selective epitaxial material at low temperatures addresses thermal budget challenges in 4F2DRAM devices, facilitating uniform junction creation and improved device performance.

WO2025254778A1PCT designated stage Publication Date: 2025-12-11APPLIED MATERIALS INC
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Patent Information

Application Number
PCT/US2025/028891
Authority / Receiving Office
WO · WO
Patent Type
Applications
Current Assignee / Owner
Priority Date
2024-06-05
Filing Date
2025-05-12
Publication Date
2025-12-11

AI Technical Summary

Technical Problem

Current DRAM devices face challenges in forming 4F2DRAM structures due to thermal budget constraints, particularly in creating junctions for source and drain at opposite sides of vertical transistors, which require low-temperature processes without sacrificing dopant concentration or junction profile.

Method used

A method involving the formation of selective epitaxial material over vertical pillars at temperatures below 500°C, combined with ion implantation and thermal treatments, to create junctions in dynamic random-access memory cells.

Benefits of technology

Enables efficient and uniform junction formation in 4F2DRAM devices, enhancing device yield and performance consistency while adhering to thermal budget constraints.

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Abstract

Disclosed are DRAM devices and methods of forming DRAM devices. One non-limiting method may include recessing a plurality of vertical pillars of a dynamic random-access memory cell within each contact opening of a plurality of contact openings, and forming a selective epitaxial material over the plurality of vertical pillars while the dynamic random-access memory cell is maintained at a temperature below 500°C.
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Citation Information

Patent Citations

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