Thin film deposition device and thin film deposition method

Abstract

The present application provides a thin film deposition device and a thin film deposition method. The thin film deposition device comprises: a processing chamber used for thin film deposition; a spraying head arranged at the top of the processing chamber and used for supplying process gas into the processing chamber; a substrate support assembly arranged below the spraying head, wherein the substrate support assembly comprises a fixed portion and a rotating portion, the lower surface of the rotating portion is in contact with the upper surface of the fixed portion, the rotating portion is rotatable relative to the fixed portion, an included angle is formed between the upper surface and the lower surface of the rotating portion, an inclination angle is formed on the upper surface of the fixed portion, and the included angle is equal to the inclination angle. When the rotating portion rotates, the inclination angle of a substrate can be adjusted, thereby changing the parallelism between the substrate and the spraying head, so as to improve the uniformity of thin film deposition on the substrate. The structure of the thin film deposition device is simple, and the parallelism between the substrate and the spraying head can be adjusted simply and quickly.

Description

Thin film deposition apparatus and thin film deposition method Technical Field

[0001] This application relates to the field of semiconductor manufacturing equipment, and in particular to a thin film deposition apparatus and a thin film deposition method. Background Technology

[0002] In chemical vapor deposition (CVD) equipment, the process involves depositing various dielectric thin films on the substrate surface. The uniformity of the film thickness is one of the key parameters of the process, directly affecting the film properties and product yield. To meet the semiconductor industry's increasing demands for high quality, high efficiency, low cost, and adaptability to large-size substrate processes, improving the uniformity of thin film deposition on the substrate is particularly important.

[0003] In the thin film deposition process, the substrate is placed on a heated substrate support assembly. Process gases flow out from the spray head, and radio frequency energy is applied between the spray head and the substrate support assembly to excite the process gases into plasma, thereby depositing a thin film on the substrate. The parallelism between the substrate and the spray head is one of the key factors determining the uniformity of the thin film on the substrate surface. However, errors in the actual equipment processing and assembly make it difficult to ensure that the substrate and the spray head are perfectly parallel, resulting in uneven film thickness deposited on the substrate surface during the process.

[0004] Therefore, it is crucial to design a structure that allows for simple and quick adjustment of the parallelism between the substrate and the spray head. Summary of the Invention

[0005] The purpose of this application is to provide a thin film deposition apparatus and a thin film deposition method to solve the problem in the prior art that the parallelism between the substrate and the spray head cannot be adjusted.

[0006] To achieve the above and other related objectives, this application provides a thin film deposition apparatus, comprising:

[0007] Processing chambers are used for thin film deposition;

[0008] A spray head, located at the top of the processing chamber, is used to supply process gas into the processing chamber;

[0009] A substrate support assembly is disposed below the spray head. The substrate support assembly includes a fixed part and a rotating part. The lower surface of the rotating part contacts the upper surface of the fixed part. The rotating part is rotatable relative to the fixed part. There is an included angle between the upper and lower surfaces of the rotating part. The upper surface of the fixed part has an inclination angle. The included angle is equal to the inclination angle.

[0010] Furthermore, the inclination angle of the upper surface of the fixing part is 1°.

[0011] Furthermore, it also includes a spring-loaded latching mechanism, through which the rotating part is axially fixed to the fixed part.

[0012] Furthermore, the spring-loaded latching mechanism includes a wedge-shaped latch, a first spring, and a fixed base. The fixed base is fixed to the bottom center of the rotating part. The wedge-shaped latch is connected to the side wall of the fixed base via a pin and rotates around the pin under the elastic force of the first spring. There are multiple wedge-shaped latches and an equal number of first springs. The top center of the fixed part is provided with a circular slot for accommodating the wedge-shaped latch.

[0013] Furthermore, the spring-loaded latching mechanism also includes a second spring and a limiting guide block. The limiting guide block passes through the central hole of the fixed base, and the second spring is sleeved on the outside of the limiting guide block. The bottom end of the limiting guide block contacts the fixed part under the elastic force of the second spring.

[0014] Furthermore, the diameter of the rotating part is less than or equal to the diameter of the substrate, and the outer periphery of the upper surface of the fixing part protrudes upward to form an annular boss, the upper surface of the boss being lower than the upper surface of the rotating part.

[0015] Furthermore, it also includes a lifting mechanism and a support member, wherein the support member is used to support the substrate, and the lifting mechanism is used to drive the support member to lift up or down, so as to lift the substrate away from the rotating part or place the substrate on the rotating part.

[0016] Furthermore, the support member includes an annular support member and a plurality of ejector pins evenly distributed and fixed on the annular support member; the lower surface of the rotating part is provided with a first annular groove, and the upper surface of the fixed part is correspondingly provided with a second annular groove; the annular support member is configured to move up and down within the first annular groove and the second annular groove; the upper surface of the rotating part is correspondingly provided with a plurality of first through holes for accommodating ejector pins.

[0017] Furthermore, the lifting mechanism includes multiple lifting pins and a driving component, the driving component being used to drive the multiple lifting pins to lift; the bottom of the fixing part is provided with multiple second through holes for accommodating the lifting pins, the second through holes extending from the bottom of the fixing part to the second annular groove.

[0018] Furthermore, the lifting mechanism also includes a lifting plate, and the plurality of lifting pins are evenly distributed and fixed on the lifting plate, and the lifting plate is connected to the driving component.

[0019] This application also provides a thin film deposition method, using the above-described thin film deposition apparatus, comprising the following steps:

[0020] Determine whether the rotating part is parallel to the spray head;

[0021] When the rotating part is not parallel to the spray head, measure the angle between the rotating part and the spray head, obtain the target rotation angle of the rotating part, and rotate the rotating part until the rotating part is parallel to the spray head;

[0022] Thin film deposition is performed on the substrate.

[0023] Furthermore, it also includes: pre-establishing a relationship curve between the tilt angle and the rotation angle of the upper surface of the rotating part, and obtaining the target rotation angle of the rotating part based on the relationship curve.

[0024] Furthermore, it also includes: when the thin film deposition on the substrate is uneven, rotating the rotating part to change the distance between the thicker area of ​​the thin film on the substrate and the spray head.

[0025] As described above, this application provides a thin film deposition apparatus and a thin film deposition method, which have the following advantages: The substrate support assembly consists of a rotating part and a fixing part, and the planes in contact with each other of the rotating part and the fixing part are both inclined planes. When the rotating part rotates, the tilt angle of the substrate can be adjusted, thereby changing the parallelism between the substrate and the spray head, so as to improve the uniformity of thin film deposition on the substrate. This thin film deposition apparatus has a simple structure and can easily and quickly adjust the parallelism between the substrate and the spray head.

[0026] Overview of the attached figures

[0027] The features and performance of this application are further described by the following embodiments and accompanying drawings.

[0028] Figure 1 shows a schematic diagram of a thin film deposition apparatus in an embodiment of this application;

[0029] Figure 2 shows a cross-sectional view of the substrate support assembly in an embodiment of this application;

[0030] Figure 3 shows an enlarged view of the spring latch mechanism in Figure 2;

[0031] Figures 4A and 4B show schematic diagrams of the rotating part and the fixed part before and after being engaged in an embodiment of this application;

[0032] Figure 5 shows another cross-sectional view of the substrate support assembly in an embodiment of this application;

[0033] Figure 6 shows a schematic diagram of the rotating part in an embodiment of this application;

[0034] Figure 7 shows a top view of the rotating part in an embodiment of this application;

[0035] Figure 8 shows a schematic diagram of the relationship between the tilt angle and the rotation angle of the upper surface of the rotating part in an embodiment of this application.

[0036] Preferred embodiments of this application

[0037] The following specific examples illustrate the implementation of this application. Those skilled in the art can easily understand other advantages and effects of this application from the content disclosed in this specification. This application can also be implemented or applied through other different specific embodiments, and various details in this specification can also be modified or changed based on different viewpoints and applications without departing from the spirit of this application.

[0038] It should be noted that the illustrations provided in this embodiment are only schematic representations of the basic concept of this application. Although the illustrations only show components relevant to this application and are not drawn according to the actual number, shape, and size of components in implementation, the shape, quantity, and proportion of each component in actual implementation can be arbitrarily changed, and the layout of the components may also be more complex. In addition, the same reference numerals in multiple figures represent the same or equivalent parts or components.

[0039] As shown in Figure 1, this application proposes a thin film deposition apparatus, including: a processing chamber 11 for performing thin film deposition; a spray head 12 disposed on the top of the processing chamber 11 for supplying process gas into the processing chamber 11; and a substrate support assembly 13 disposed below the spray head 12 for supporting and heating the substrate w.

[0040] Figure 2 shows a cross-sectional view of the substrate support assembly 13. Referring to Figure 2, the substrate support assembly 13 includes a fixing part 131 and a rotating part 132. The base 1310 of the fixing part 131 is fixed to the bottom of the processing chamber 11. The rotating part 132 is embedded in the fixing part 131 and is rotatable relative to the fixing part 131. A heating wire is provided inside the fixing part 131 for heating the substrate w placed on the rotating part 132. The upper surface of the rotating part 132 contacts the substrate w, and its lower surface contacts the upper surface of the fixing part 131. The diameter of the rotating part 132 is the same as or smaller than the diameter of the substrate w. A boss 1311 is formed by an upward protrusion on the outer periphery of the upper surface of the fixing part 131. The boss 1311 is annular in shape. The upper surface of the boss 1311 is lower than the upper surface of the rotating part 132. The angle between the upper and lower surfaces of the rotating part 132 is the same as the tilt angle of the upper surface of the fixing part 131 (i.e., the angle between the upper surface of the fixing part 131 and the horizontal plane). The tilt angle of the upper surface of the fixing part 131 is set according to actual process requirements. Preferably, the tilt angle is 1°. Therefore, when the substrate w is placed on the rotating part 132, the adjustment range of the tilt angle of the substrate w (i.e., the angle between the substrate w and the horizontal plane) is 0 to 2°.

[0041] As shown in Figures 2 and 3, the rotating part 132 is axially fixed to the fixed part 131 by a spring-locking mechanism 130. The spring-locking mechanism 130 includes a wedge-shaped latch 1301, a first spring 1302, a second spring 1303, a fixed seat 1304, and a limiting guide block 1305. The fixed seat 1304 is fixed at the bottom center of the rotating part 132. The wedge-shaped latch 1301 is connected to the side wall of the fixed seat 1304 by a pin 1306. The outer side of the wedge-shaped latch 1301 is a slope, and the inner side abuts against one end of the first spring 1302. The other end of the first spring 1302 abuts against the fixed seat 1304. The spring-locking mechanism 130 has three sets of elastic latching structures. Each wedge-shaped latch 1301 and the first spring 1302 form an elastic latching structure. The wedge-shaped latch 1301 rotates around the pin 1306 under the elastic force of the first spring 1302. The upper surface of the fixing part 131 has a circular slot 1312 at its center to accommodate the spring-loaded snap-fit ​​structure 130. The fixing base 1304 has a central hole for accommodating the limiting guide block 1305. The inner wall of the central hole has a protruding step 13041. The top and bottom ends of the limiting guide block 1305 extend outward to form steps. The second spring 1303 is sleeved on the limiting guide block 1305, and the two ends of the second spring 1303 abut against the step 13041 in the central hole and the bottom step of the limiting guide block 1305. The steps at the top and bottom ends of the limiting guide block 1305 prevent the limiting guide block 1305 from falling out of the central hole and allow it to move axially under the action of the second spring 1303.

[0042] Figures 4A and 4B are schematic diagrams before and after the rotating part 132 and the fixed part 131 are engaged. Referring to Figures 3, 4A, and 4B, when the rotating part 132 and the fixed part 131 are engaged, pressing down on the rotating part 132 and the spring-loaded latching mechanism 130 causes the wedge-shaped latch 1301 to rotate clockwise around the pin and compress the first spring 1302. After the rotating part 132 and the fixed part 131 are engaged, the edge of the wedge-shaped latch 1301 is engaged in the slot 1312 of the fixed part 131, and the elastic force of the second spring 1303 pushes the bottom end of the limiting guide block 1305 to contact the fixed part 131. An axial preload can be applied by the second spring 1303 to eliminate the fit clearance.

[0043] As shown in Figure 1, the thin film deposition apparatus proposed in this application further includes a lifting mechanism 14 and a support member. The support member is used to support the substrate, and the lifting mechanism 14 is used to drive the support member to rise or fall, so as to lift the substrate w away from the substrate support assembly 13 or place the substrate w on the substrate support assembly 13. As shown in Figures 5 and 6, the support member includes an annular support member 1321 and a plurality of evenly distributed ejector pins 1322 fixed on the annular support member 1321. The lower surface of the rotating part 132 is also provided with a first annular groove 1323, and a second annular groove 1313 is correspondingly provided on the upper surface of the fixed part 131. The annular support member 1321 rises and falls within the first annular groove 1323 and the second annular groove 1313. As shown in Figure 7, the upper surface of the rotating part 132 is correspondingly provided with a plurality of first through holes 1324 communicating with the first annular groove 1323 for accommodating the ejector pins 1322. When the annular support member 1321 is located at the bottom of the second annular groove 1313, the top tip of the ejector pin 1322 is lower than the upper surface of the rotating part 132. The number of ejector pins 1322 is at least three, and correspondingly, the number of first through holes 1324 is also at least three. In this embodiment, the number of ejector pins 1322 and first through holes 1324 are both three.

[0044] As shown in Figure 5, the lifting mechanism 14 includes lifting pins 141, a lifting plate 142, and a driving component. The lifting plate 142 is annular and surrounds the base 1310 of the fixing part 131. Multiple lifting pins 141 are evenly distributed and fixed on the lifting plate 142. The bottom of the fixing part 131 is also provided with multiple second through holes 1314 for accommodating the lifting pins 141. These second through holes 1314 extend from the bottom of the fixing part 131 to the second annular groove 1313 of the fixing part 131, allowing the lifting pins 141 to pass through the second through holes 1314 and contact the annular support member 1321. The number of lifting pins 141 is at least three, and correspondingly, the number of second through holes 1314 is also at least three. In this embodiment, the number of both lifting pins 141 and second through holes 1314 is three.

[0045] When it is necessary to lift the substrate w, the driving member drives the lifting plate 142 and the lifting pin 141 to rise. The lifting pin 141 drives the annular support member 1321 and the ejector pin 1322 to rise. After the ejector pin 1322 extends out of the upper surface of the rotating part 132, it lifts the substrate w away from the rotating part 132. When it is necessary to place the substrate w, the driving member drives the lifting plate 142 and the lifting pin 141 to fall. The annular support member 1321 and the ejector pin 1322 fall under the action of gravity. The top of the ejector pin 1322 falls below the upper surface of the rotating part 132 to place the substrate w on the rotating part 132.

[0046] The thin film deposition apparatus proposed in this application is suitable for applications where the substrate support assembly 13 and the spray head 12 are not parallel. By adjusting the position of the rotating part 13, the substrate support assembly 132 is made parallel to the spray head 12, thereby ensuring the uniformity of thin film deposition on the substrate w. This thin film deposition apparatus is also suitable for applications where the thin film on the substrate w surface is uneven. Specifically, when the substrate support assembly 13 and the spray head 12 are parallel, the thin film on the substrate w surface may still be uneven due to factors such as airflow and magnetic field inside the processing chamber 11. By adjusting the position of the rotating part 132, the parallelism between the substrate support assembly 13 and the spray head 12 is changed, thereby improving the uniformity of the thin film on the substrate w surface.

[0047] This application also proposes a thin film deposition method using the aforementioned thin film deposition apparatus, the method comprising the following steps:

[0048] S1: Determine whether the rotating part and the spray head are parallel;

[0049] S2: When the rotating part is not parallel to the spray head, measure the angle between the rotating part and the spray head, obtain the target rotation angle of the rotating part, and rotate the rotating part until the rotating part is parallel to the spray head;

[0050] S3: Thin film deposition is performed on the substrate.

[0051] Specifically, in step S2, the target rotation angle of the rotating part is obtained and the position of the rotating part is adjusted according to the pre-established relationship curve between the tilt angle and the rotation angle of the upper surface of the rotating part. This relationship curve is used to show the law of how the tilt angle of the upper surface of the rotating part changes with the rotation angle of the rotating part. In the embodiment shown in Figure 7, the 12 o'clock position is taken as 0° of the rotating part. A mark is provided on the edge of the rotating part. When the mark is at 0°, the rotating part is in the initial position, and the tilt angle of the upper surface of the rotating part is 0°. The rotating part is parallel to the spray head. The rotation scale outside the rotating part can be set on the boss surface of the fixed part. Taking the tilt angle of the lower surface of the rotating part 132 or the upper surface of the fixed part 131 as 1° as an example, the relationship curve is shown in Figure 8, which is obtained from simulation test. In this figure, the horizontal axis is the rotation angle of the rotating part, and the vertical axis is the tilt angle of the rotating part. The unit is degrees. By rotating the rotating part clockwise, the tilt angle of the upper surface of the rotating part changes. Specifically, for example, after the thin film deposition apparatus is installed, the initial angle between the rotating part and the spray head is measured to be 1°. Based on this relationship curve, rotating the rotating part 60° clockwise will make its tilt angle 0°, thus achieving parallelism between the rotating part and the spray head. In other specific embodiments, the rotating part can also be rotated counterclockwise to achieve parallelism between the rotating part and the spray head.

[0052] In some embodiments, the following steps are also included:

[0053] S4: When the thin film deposition on the substrate is uneven, adjust the position of the rotating part to change the parallelism between the rotating part and the spray head.

[0054] When the rotating part is parallel to the spray head, factors such as airflow and magnetic fields inside the processing chamber may cause unevenness of the thin film on the substrate surface. By adjusting the position of the rotating part, the parallelism between the rotating part and the spray head is changed, thereby improving the uniformity of the thin film on the substrate surface. Specifically, when the thin film in a certain area of ​​the substrate is thicker, the rotating part is rotated to change the distance between the thicker area of ​​the thin film and the spray head. This distance is increased or decreased accordingly depending on the properties of different types of thin films.

[0055] In the thin film deposition apparatus proposed in this application, the substrate support assembly consists of a rotating part and a fixed part. The planes in contact between the rotating part and the fixed part are both inclined surfaces. When the rotating part rotates, the tilt angle of the substrate can be adjusted, thereby changing the parallelism between the substrate and the spray head to improve the uniformity of thin film deposition on the substrate. This thin film deposition apparatus has a simple structure and can easily and quickly adjust the parallelism between the substrate and the spray head.

[0056] The above embodiments are merely illustrative of the principles and effects of this application and are not intended to limit this application. Any person skilled in the art can modify or alter the above embodiments without departing from the spirit and scope of this application. Therefore, all equivalent modifications or alterations made by those skilled in the art without departing from the spirit and technical concept disclosed in this application should still be covered by the claims of this application.

Claims

1. A thin film deposition apparatus, characterized by, The application relates to a thin film deposition device. The device comprises a processing chamber for thin film deposition, a shower head arranged at the top of the processing chamber for supplying process gas into the processing chamber, and a substrate supporting assembly arranged below the shower head, wherein the substrate supporting assembly comprises a fixed part and a rotating part, the lower surface of the rotating part is in contact with the upper surface of the fixed part, the rotating part is rotatable relative to the fixed part, the upper surface and the lower surface of the rotating part form an included angle, the upper surface of the fixed part forms an inclination angle, and the included angle is equal to the inclination angle. The inclination angle of the upper surface of the fixed part is 1 degree. The device further comprises a spring buckle mechanism, and the rotating part is axially fixed on the fixed part through the spring buckle mechanism.

2. The thin film deposition apparatus of claim 1, wherein The spring buckle mechanism comprises wedge buckles, first springs and fixing seats, the fixing seats are fixed at the bottom center of the rotating part, the wedge buckles are connected with the side walls of the fixing seats through pins, and the wedge buckles are rotatable around the pins under the elastic force of the first springs; the number of the wedge buckles and the first springs is equal and is multiple; and the top center of the fixed part is provided with circular clamping grooves for accommodating the wedge buckles.

3. The thin film deposition apparatus of claim 1, wherein The spring buckle mechanism further comprises second springs and limiting guide blocks, the limiting guide blocks are arranged in the central holes of the fixing seats, the second springs are sleeved outside the limiting guide blocks, and the bottom ends of the limiting guide blocks are in contact with the fixed part under the elastic force of the second springs.

4. The thin film deposition apparatus of claim 3, wherein The diameter of the rotating part is less than or equal to the diameter of the substrate, the periphery of the upper surface of the fixed part is upwardly protruded to form a ring-shaped boss, and the upper surface of the boss is lower than the upper surface of the rotating part.

5. The thin film deposition apparatus of claim 4, wherein The device further comprises a lifting mechanism and a support for supporting the substrate, and the lifting mechanism is used for driving the support to lift or lower the substrate to or from the rotating part.

6. The thin film deposition apparatus of claim 1, wherein The support comprises a ring-shaped support and a plurality of evenly distributed top pins fixed on the ring-shaped support, the lower surface of the rotating part is provided with a first ring-shaped groove, the upper surface of the fixed part is correspondingly provided with a second ring-shaped groove, the ring-shaped support is arranged to be lifted in the first ring-shaped groove and the second ring-shaped groove, and the upper surface of the rotating part is correspondingly provided with a plurality of first through holes for accommodating the top pins.

7. The thin film deposition apparatus of claim 1, wherein The lifting mechanism comprises a plurality of lifting pins and a driving member for driving the plurality of lifting pins to lift, the bottom of the fixed part is provided with a plurality of second through holes for accommodating the lifting pins, and the second through holes extend from the bottom of the fixed part to the second ring-shaped groove.

8. The thin film deposition apparatus of claim 7, wherein The lifting mechanism further comprises a lifting plate, the plurality of lifting pins are evenly distributed and fixed on the lifting plate, and the lifting plate is connected with the driving member.

9. The thin film deposition apparatus of claim 8, wherein The method comprises the following steps:

10. The thin film deposition apparatus of claim 9, wherein judging whether the rotating part and the shower head are parallel; 11. A thin film deposition method using the thin film deposition apparatus according to any one of claims 1 to 10, characterized by, when the rotating part and the shower head are not parallel, measuring the included angle between the rotating part and the shower head, obtaining a target rotating angle of the rotating part, and rotating the rotating part to be parallel to the shower head; carrying out thin film deposition on the substrate. The device further comprises ​ 12. The thin film deposition method of claim 11, wherein, ​ A relationship curve between the inclination of the upper surface of the rotating part and the rotation angle is established in advance, and a target rotation angle of the rotating part is obtained according to the relationship curve.

13. The thin film deposition method of claim 12, wherein, Also include: When the thin film on the substrate is not deposited uniformly, the rotating part is rotated to change the distance between the area where the thin film on the substrate is thicker and the shower head.

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