Process chamber and semiconductor process device

Abstract

The present disclosure relates to the field of semiconductors. Provided in the present disclosure are a process chamber and a semiconductor process device. The process chamber comprises: a chamber body, a gas inlet assembly, a first heating assembly and a heat insulation assembly; the gas inlet assembly is arranged on the chamber body and is used for introducing a process gas into the chamber body; the first heating assembly is arranged in the chamber body, is connected to an edge region of the gas inlet assembly and is used for heating the edge region of the gas inlet assembly; the heat insulation assembly is connected to the first heating assembly and the chamber body and is used for heat insulation between the first heating assembly and the chamber body. The present application can at least solve problems such as uneven temperature at the center and the edge of a preheating plate.

Description

Process chambers and semiconductor process equipment Technical Field

[0001] This application belongs to the field of semiconductor technology, specifically relating to a process chamber and semiconductor process equipment. Background Technology

[0002] Chemical Vapor Deposition (CVD) equipment is widely used in semiconductor chip manufacturing processes. This equipment mainly consists of an inlet device, a vacuum reaction chamber, a substrate, and a pumping device. Utilizing the CVD principle, the inlet device delivers various plasmas or heated and activated gases into the vacuum reaction chamber. Under appropriate temperature and pressure conditions, a chemical reaction occurs, and the products are deposited on the wafer surface on the substrate. Residual gases and reaction byproducts are discharged and decomposed by the pumping device. The inlet device includes a gas distribution plate and a preheating plate. The preheating plate preheats the gas, while the gas distribution plate delivers the gas into the vacuum reaction chamber and also distributes the gas evenly.

[0003] In the CVD process, the deposition rate of the thin film is highly sensitive to the reaction temperature. For CVD processes with high reaction temperatures (>500℃), such as CVD Ti / ALD TiN, key components for ensuring temperature uniformity at high temperatures include the gas distribution disk located directly above the wafer. The gas distribution disk needs to be kept at a high temperature while ensuring good temperature uniformity and high stability.

[0004] However, the gas distribution disk is very close to the wafer (3mm-20mm), resulting in significant radiative, conductive, and convective heat transfer between them. Even if the wafer is at a high temperature and has excellent temperature uniformity, the large temperature difference between the gas distribution disk and the wafer, coupled with poor temperature uniformity between the center and edges of the gas distribution disk itself, directly affects the temperature uniformity of the wafer. Gas passes through the gas distribution disk and is preheated to a high temperature before entering the core reaction zone. The temperature uniformity of the gas distribution disk also affects the preheating effect of the gas, causing uneven gas temperature and thus impacting the deposition process. Due to the high temperature of the gas distribution disk, deposits will also form on its lower surface. The adhesion of these deposits varies at different temperatures, with lower-temperature edges producing particles. Therefore, heating the gas distribution disk and ensuring its temperature uniformity are crucial.

[0005] Considering that the temperature uniformity of the gas distribution plate is affected by the preheating plate, when the edge temperature of the preheating plate is low, the edge temperature of the gas distribution plate will also be low, resulting in uneven temperature distribution of the gas distribution plate. Summary of the Invention

[0006] The purpose of this application is to provide a process chamber and semiconductor process equipment that can at least solve problems such as uneven temperature between the center and edge of the preheating plate.

[0007] To solve the above-mentioned technical problems, this application is implemented as follows:

[0008] This application provides a process chamber, including: a chamber body, an air inlet assembly, a first heating assembly, and a heat insulation assembly;

[0009] The air intake assembly is located in the cavity and is used to introduce process gas into the cavity.

[0010] The first heating component is disposed in the cavity and connected to the edge region of the air intake component, for heating the edge region of the air intake component;

[0011] The heat insulation component connects the first heating component and the cavity, and is used to provide heat insulation between the first heating component and the cavity.

[0012] This application also provides a semiconductor process apparatus, including the aforementioned process chamber.

[0013] In this embodiment, process gas can be introduced into the cavity through the air intake component, and heat can be transferred to the edge of the air intake component through the first heating component. This prevents the edge temperature of the air intake component from being lower than the central temperature due to heat loss at the edge, thereby improving the temperature uniformity between the edge and central regions of the air intake component. The heat insulation component separates the first heating component from the cavity, thereby reducing the heat transfer from the first heating component to the cavity and allowing more heat to be transferred to the edge of the air intake component. This further improves the edge temperature of the air intake component and reduces heat transfer to the cavity, effectively mitigating the problem of the edge temperature being lower than the central temperature due to heat loss at the edge of the air intake component. Therefore, it helps to improve the overall temperature uniformity of the air intake component, thereby improving the uniformity of the wafer temperature and the temperature of the reaction source gas, thus ensuring the process effect. In addition, the relatively uniform overall temperature of the air intake component can also alleviate the problem of particle generation due to excessively low edge temperature. Attached Figure Description

[0014] Figure 1 is a schematic diagram of the process chamber disclosed in an embodiment of this application;

[0015] Figure 2 is a schematic diagram of the edge radiation of the gas uniform component disclosed in the embodiment of this application;

[0016] Figure 3 is a partial schematic diagram of the heat insulation component and the first heating component disclosed in the embodiments of this application;

[0017] Figure 4 is a schematic diagram of the first heating element disclosed in an embodiment of this application;

[0018] Figure 5 is a schematic diagram of various forms of the first annular component disclosed in the embodiments of this application;

[0019] Figure 6 is a partial schematic diagram of the sealing ring and the third heating assembly of the first form disclosed in the embodiments of this application;

[0020] Figure 7 is a partial schematic diagram of the sealing ring and the second type of third heating assembly disclosed in the embodiments of this application;

[0021] Figure 8 is a schematic diagram of the light emission of the third heating element disclosed in the embodiment of this application;

[0022] Figure 9 is a schematic diagram comparing the simulation results disclosed in the embodiments of this application.

[0023] Explanation of reference numerals in the attached drawings: 10-Cavity; 11-Cover plate; 12-Sealing ring; 121-Outer flange; 13-Protective plate; 20-Intake assembly; 21-Preheating component; 22-Gas equalizing component; 23-Intake pipe; M-Intake chamber; 30-First heating assembly; 31-Second annular component; 311-Receiving groove; 32-First heating component; 321-Heating wire; 322-Lead wire; 33-Sealing component; 34-First thermocouple; 40-Heat insulation assembly; 41-First annular component; 411-Bent section; 50-Second heating assembly; 51-Second heating component; 52-Heat conducting component; 53-Second thermocouple; 60-Third heating assembly; 61-Third heating component; 62-Reflector; 63-Light-transmitting cover; 64-Mounting base; 70-Sealing ring. Detailed Implementation

[0024] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.

[0025] The terms "first," "second," etc., used in the specification and claims of this application are used to distinguish similar objects and not to describe a specific order or sequence. It should be understood that such use of data can be interchanged where appropriate so that embodiments of this application can be implemented in orders other than those illustrated or described herein, and the objects distinguished by "first," "second," etc., are generally of the same class and the number of objects is not limited; for example, a first object can be one or more. Furthermore, in the specification and claims, "and / or" indicates at least one of the connected objects, and the character " / " generally indicates that the preceding and following objects are in an "or" relationship.

[0026] The embodiments of this application will be described in detail below with reference to the accompanying drawings and specific examples and application scenarios.

[0027] Referring to Figures 1 to 9, an embodiment of this application discloses a process chamber, which includes a cavity 10, an air intake assembly 20, a first heating assembly 30, and a heat insulation assembly 40.

[0028] The cavity 10 is a basic component that can provide an installation and support base for the air intake assembly 20, the first heating assembly 30, the heat insulation assembly 40, etc., and can also provide a process environment for the process reaction.

[0029] The gas inlet assembly 20 is used to introduce the process gas required for the reaction into the cavity 10, wherein the gas inlet assembly 20 is disposed in the cavity 10. In some embodiments, the gas inlet assembly 20 may be disposed at the top of the cavity 10, and at least a portion of the gas inlet assembly 20 is located inside the cavity 10 and is correspondingly disposed with a base disposed inside the cavity 10, so as to supply the process gas to the wafer surface supported by the base through the gas inlet assembly 20.

[0030] To preheat the process gas, the intake assembly 20 can have a preheating function so that the process gas is heated and its temperature is increased as it passes through the intake assembly 20, so as to meet the process requirements.

[0031] Referring to Figures 1 and 2, in some embodiments, the air intake assembly 20 may include a preheating element 21 and an air distribution element 22, which are spaced apart along the axial direction of the process chamber to form an air intake chamber M. The preheating element 21 is used to preheat the process gas, and the air distribution element 22 is used to uniformly deliver the process gas into the chamber 10.

[0032] Additionally, the intake assembly 20 may also include an intake pipe 23 that passes through the preheating member 21 and communicates with the intake chamber M.

[0033] Based on the above configuration, process gas can be introduced into the intake chamber M through the intake pipe 23. At the same time, the process gas can be preheated through the preheating component 21. The preheated process gas is finally diffused into the cavity 10 through the gas equalization component 22.

[0034] In actual operation, the edge of the gas equalization component 22 can be connected to the bottom of the preheating component 21, and the two form an air inlet cavity M. The process gas can enter the air inlet cavity M and diffuse into the cavity 10 through the gas equalization component 22, so that the process gas can diffuse more evenly to the wafer surface and react. In addition, the process gas in the air inlet cavity M can be preheated evenly through the preheating component 21.

[0035] In some embodiments, the preheating component 21 and the gas equalization component 22 can be connected by welding to ensure the sealing of the connection. Of course, screw connection can also be used.

[0036] In addition, the gas equalization component 22 can be a gas equalization plate, on which multiple gas equalization holes can be distributed. The multiple gas equalization holes are respectively connected to the air inlet chamber M and the cavity 10, so that the process gas in the air inlet chamber M can diffuse into the cavity 10 through the multiple gas equalization holes.

[0037] Referring to Figure 1, in some embodiments, the process chamber may further include a second heating component 50 and a controller (not shown in the figure). The second heating component 50 contacts the air intake component 20 to transfer heat to the air intake component 20, thereby enabling the air intake component 20 to have a preheating function, and thus achieving a preheating effect on the process gas. The second heating component 50 may also contact the preheating element 21 to transfer heat to the preheating element 21.

[0038] Specifically, the second heating assembly 50 may include a second heating element 51 and a heat-conducting element 52. The heat-conducting element 52 is connected to the side of the preheating element 21 facing away from the gas equalization element 22, and the second heating element 51 is connected to the side of the heat-conducting element 52 facing away from the preheating element 21. That is, the preheating element 21 and the second heating element 51 can be connected through the heat-conducting element 52. In this way, the heat generated by the second heating element 51 can be transferred to the preheating element 21 through the heat-conducting element 52, causing the preheating element 21 to heat up. Thus, the process gas can be heated when passing through the preheating element 21 to achieve a preheating effect. It should be noted that by setting the heat-conducting element 52, a sufficiently large contact area can be ensured between the second heating element 51 and the preheating element 21. On the one hand, this can improve the heat transfer efficiency, and on the other hand, it can improve the heat transfer uniformity, so that the heat generated by the second heating element 51 can be transferred to the preheating element 21 more evenly.

[0039] In this embodiment, the heat-conducting element 52 is made of a material with high thermal conductivity, such as aluminum or copper. Its function is to conduct the heat generated by the second heating element 51 to the preheating element 21 of the air intake assembly 20 more evenly.

[0040] For example, the second heating element 51 can be a heating plate, and the heat-conducting element 52 can be a heat-conducting plate. Alternatively, the second heating element 51 can be pressed onto the heat-conducting element 52 by means of clamps or clips, or it can be mounted onto the heat-conducting element 52 by screws. The heat-conducting element 52 can be mounted onto the preheating element 21 by means of screws.

[0041] Referring again to Figure 1, the second heating component 50 may further include a second thermocouple 53, which is disposed on the preheating component 21 and electrically connected to the second heating component 51. Thus, the temperature of the preheating component 21 can be detected by the second thermocouple 53, and the controller can adjust the heating power of the second heating component 51 according to the temperature of the preheating component 21, so that the temperature of the preheating component 21 can fluctuate within a preset range, preventing the temperature of the preheating component 21 from being too high or too low and affecting the process effect.

[0042] To further improve the uniformity of temperature distribution in different areas of the preheating component 21, the second heating component 50 may include multiple second thermocouples 53, which are distributed from the middle to the edge of the preheating component 21, so as to detect the temperature of each area from the middle to the edge of the preheating component 21 and obtain the real-time temperature of multiple areas of the preheating component 21.

[0043] In addition, the second heating element 51 can be coiled around the middle and edge regions of the preheating element 21, thereby increasing the coverage area of ​​the second heating element 51 on the preheating element 21, and thus enabling temperature regulation of multiple regions of the preheating element 21, which is beneficial to improving the temperature uniformity of multiple regions of the preheating element 21.

[0044] For example, the second heating element 51 can be a heating wire, a heating strip, or of course, a heating plate, as long as it can achieve a relatively uniform heating effect, and its specific form is not limited.

[0045] In some embodiments, the heat insulation component 40 can be connected between the air intake component 20 and the cavity 10 to support the air intake component 20 and ensure the stability of the air intake component 20 within the cavity 10. Furthermore, since the cavity 10 is usually in a vacuum state during the process, heat conduction occurs between the air intake component 20 and the cavity 10 due to direct or indirect contact. By connecting the air intake component 20 and the cavity 10 with the heat insulation component, a certain heat insulation effect can be achieved between the air intake component 20 and the cavity 10, thereby reducing the transfer of heat from the air intake component 20 (i.e., the heat transferred from the second heating component 50 to the air intake component 20) to the cavity 10 and affecting the temperature uniformity of the air intake component 20.

[0046] The bottom end of the heat insulation component 40 can be connected to the preheating component 21, and the top end of the heat insulation component 40 can be connected to the top of the cavity 10, so that the air intake component 20 can be suspended in the top area of ​​the cavity 10 through the heat insulation component 40, and the gas distribution component 22 of the air intake component 20 is located above the base, so as to diffuse the process gas onto the wafer supported by the base.

[0047] In some embodiments, the bottom end of the heat insulation component 40 can be connected to the edge area of ​​the preheating component 21. On the one hand, this can prevent the heat insulation component 40 from interfering with other structures above the air intake component 20. On the other hand, it increases the area of ​​the connection region, which can improve the stability of the air intake component 20 to a certain extent.

[0048] However, the temperature of the cavity 10 is lower than that of the air intake assembly 20, and the temperature difference is large. Considering that the heat insulation component 40 does not play an absolute heat insulation role, some of the heat of the air intake assembly 20 will inevitably be transferred to the cavity 10 through the heat insulation component 40. This will cause the temperature of the edge area of ​​the air intake assembly 20 to be lower than that of the middle area, resulting in a thermal edge effect. This will lead to uneven temperature between the edge area and the middle area of ​​the air intake assembly 20, affecting the uniformity of the process gas and ultimately affecting the process effect.

[0049] To alleviate the above problems, the embodiments of this application design the structure and material of the heat insulation component 40 to reduce the efficiency of heat transfer from the edge area of ​​the air intake component 20 to the cavity 10 via the heat insulation component 40. Specifically, the heat insulation component 40 can be thinned to reduce its thickness, thereby decreasing the heat transfer area and thus reducing the heat transfer efficiency. Alternatively, a material with low thermal conductivity can be used to further reduce the heat transfer efficiency.

[0050] However, the aforementioned methods of reducing heat transfer efficiency can only reduce heat loss from the intake assembly 20. After a period of processing time, the temperature in the edge area remains lower than that in the center area. Therefore, this embodiment adds a first heating assembly 30 to supplement the heat of the intake assembly 20, thereby compensating for the heat loss from the edge area of ​​the intake assembly 20.

[0051] In this embodiment, the first heating component 30 is disposed within the cavity 10 and connected to the edge region of the intake component 20 for heating the edge region of the intake component 20. Based on this configuration, the first heating component 30 can transfer heat to the edge region of the intake component 20 and prevent heat transfer from the intake component 20 to the cavity 10. This compensates for heat loss caused by the heat transfer from the edge region of the intake component 20 to the cavity 10 through the heat insulation component 40, thereby minimizing the temperature difference between the edge region and the central region of the intake component 20. This improves the temperature uniformity between the edge and central regions of the intake component 20, enhances the temperature uniformity of the process gas, and ultimately improves the process performance.

[0052] The first heating component 30 can be connected to the edge region of the preheating component 21 to compensate for the heat in the edge region of the preheating component 21 and ensure the uniformity of temperature in each region of the preheating component 21.

[0053] Considering that both the heat insulation component 40 and the first heating component 30 are connected to the edge region of the air intake component 20, in some embodiments, the heat insulation component 40 can connect the first heating component 30 and the cavity 10. In this way, the heat insulation component 40 can be connected to the air intake component 20 through the first heating component 30, and the edge region of the air intake component 20 can be heated through the first heating component 30. At the same time, the heat insulation component 40 can also be used to insulate between the first heating component 30 and the cavity 10, so as to reduce the heat generated by the first heating component 30 from being transferred to the cavity 10 through the heat insulation component 40, thereby reducing heat loss.

[0054] In this embodiment, process gas can be introduced into the cavity 10 through the air intake assembly 20, and heat can be transferred to the edge area of ​​the air intake assembly 20 through the first heating assembly 30. This prevents the edge area of ​​the air intake assembly 20 from losing heat and becoming colder than the central area, thus improving the temperature uniformity between the edge and central areas of the air intake assembly 20. The heat insulation assembly 40 separates the first heating assembly 30 from the cavity 10, reducing the heat transfer from the first heating assembly 30 to the cavity 10, thereby ensuring the heat from the first heating assembly 30 is effectively absorbed. More heat is transferred to the edge region of the intake assembly 20, which helps to increase the temperature of the edge region of the intake assembly 20 and reduce the transfer of heat from the intake assembly 20 to the cavity 10. This can effectively alleviate the problem that the temperature of the edge region is lower than that of the central region due to heat loss in the edge region of the intake assembly 20. Therefore, it helps to improve the overall temperature uniformity of the intake assembly 20, thereby improving the uniformity of the wafer temperature and the process gas temperature, thus ensuring the process effect. In addition, the overall temperature of the intake assembly 20 is more uniform and can alleviate the problem of particles generated due to excessively low edge temperature.

[0055] Referring to Figure 3, in some embodiments, the heat insulation component 40 may include a first annular member 41, one end of which is connected to the first heating component 30 along its own axis, and the other end of which is connected to the cavity 10. Based on this arrangement, the first heating component 30 and the air intake component 20 can be suspended within the cavity 10 via the first annular member 41, ensuring the installation stability of the first heating component 30 and the air intake component 20.

[0056] It should be noted that one end of the first annular component 41 is connected to the edge area of ​​the air intake component 20 (i.e., the edge area of ​​the preheating component 21) through the first heating component 30. Compared with the method of connecting to the air intake component 20 far from the edge area, it has a larger connection area, which can improve the connection strength to a certain extent and improve the hoisting stability of the first heating component 30 and the air intake component 20. Of course, since the middle of the first annular component 41 is through, it can provide installation space for the installation of other components to avoid installation interference.

[0057] For example, the first annular member 41 can be a circular annular member, or of course, a polygonal annular member, etc., and the specific shape is not limited.

[0058] In some embodiments, the top of the cavity 10 may be provided with a cover plate 11, and the upper end of the first annular member 41 may be connected to the cover plate 11 to fix the first annular member 41 in place. Exemplarily, the first annular member 41 and the cover plate 11 may be connected by welding to ensure the sealing of the connection.

[0059] Considering that the first heating component 30 is connected to the cavity 10 through the first annular component 41, and that the first heating component 30 is a high-temperature component while the cavity 10 is a low-temperature component, the heat of the first heating component 30 will inevitably be transferred to the cavity 10, causing the heat of the first heating component 30 and even the air intake component 20 to be lost, thereby causing the air intake component 20 to preheat the process gas unevenly.

[0060] To further reduce heat loss, the sidewall of the first annular component 41 can be bent to form a bent structure. A bent structure refers to a structure where the extension direction of the sidewall of the first annular component 41 is non-linear, such as a combination of one or more of the following: arc-shaped (e.g., C-shaped), wavy (e.g., S-shaped), or zigzag (e.g., Z-shaped, N-shaped, M-shaped). Based on this, the length of the first annular component 41 can be increased, thereby extending the heat transfer path. This can further enhance the heat insulation effect of the heat insulation component 40 to a certain extent, effectively preventing heat from the first heating component 30 from being transferred to the cavity 10 via the first annular component 41. This allows the first heating component 30 to provide more heat to the air intake component 20, which is beneficial for improving the temperature uniformity between the edge and central areas of the air intake component 20, ultimately improving the process efficiency.

[0061] There are various ways to achieve the above-mentioned bending structure. In some embodiments, as shown in FIG3, the sidewall of the first annular member 41 may include at least two bending segments 411. The at least two bending segments 411 are connected along the axial direction of the annular member 41 to form the above-mentioned bending structure, which extends the heat transfer path and achieves a better heat insulation effect.

[0062] In some embodiments, the cross-section of each bent segment 411 can be C-shaped, as shown in 5a of FIG5, and the openings of two adjacent bent segments 411 face opposite directions. That is, the opening of one of two adjacent bent segments 411 faces the outside of the first annular member 41, and the opening of the other faces the inside of the first annular member 41. In this way, at least two bent segments 411 can be arranged in a meandering manner, thereby extending the heat transfer path and improving the heat insulation effect. The opening of the bent segment 411 refers to the recessed opening formed by the bent segment 411 facing the outside or inside of the first annular member 41.

[0063] In addition, the cross-section of each bending segment 411 can also be angular, wavy, M-shaped, N-shaped (as shown in 5c in Figure 5), etc., and its arrangement and connection are similar to the C-shaped mentioned above, so they will not be described again here. Of course, the cross-section of the side wall of the entire first annular member 41 can also have multiple rotary bending segments 411, as shown in 5b in Figure 5.

[0064] It should be noted that the shapes of the at least two bending segments 411 in this embodiment can be the same or different, as long as they can extend the heat transfer path. The specific shape and connection method are not limited.

[0065] For example, the bending structure formed by at least two bending segments 411 can be a labyrinth structure to extend the heat transfer path and achieve better heat insulation effect.

[0066] In some embodiments, the first annular member 41 may be formed by at least two bent segments 411 fixedly connected together; of course, it may also be a single integral structure.

[0067] Referring to Figure 3, in some embodiments, the first heating assembly 30 may include a second annular member 31, a first heating element 32, and a sealing member 33. The second annular member 31 connects the edge regions of the heat insulation assembly 40 and the air intake assembly 20, and its sidewall may have a receiving groove 311. The first heating element 32 is disposed within the receiving groove 311, and the sealing member 33 is disposed at the opening of the receiving groove 311. Based on this arrangement, the first heating element 32 provides heating, the second annular member 31 accommodates and installs the first heating element 32, and the sealing member 33 provides shielding, limiting, and protection for the first heating element 32, preventing it from detaching from the second annular member 31 or being affected by other factors.

[0068] The first annular component 41 and the second annular component 31 can be fixedly connected, and the second annular component 31 is fixedly connected to the preheating component 21. Thus, the second annular component 31 enables the fixed connection between the first annular component 41 and the preheating component 21, facilitating stable installation of the intake assembly 20. This method facilitates the processing of the first annular component 41 and the second annular component 31, and also facilitates their connection. For example, the fixed connection method can be welding, bonding, riveting, screwing, snap-fitting, etc.

[0069] Of course, the first annular component 41 and the second annular component 31 can also be set as a single unit. This method can improve the overall strength compared to the fixed connection method.

[0070] In some embodiments, the opening of the receiving groove 311 can face the outside or inside of the second annular member 31, as long as it facilitates the disassembly and assembly of the first heating member 32, and the specific form is not limited.

[0071] The sealing element 33 is detachably installed into the slot of the receiving groove 311 to facilitate maintenance or replacement of the first heating element 32.

[0072] Referring to 4a, 4b and 4c in Figure 4, the first heating element 32 may include at least one heating wire 321 and at least one lead wire 322. The at least one heating wire 321 is arranged circumferentially along the second annular member 31, and each heating wire 321 extends circumferentially along the second annular member 31. The at least one lead wire 322 is connected to the corresponding heating wire 321.

[0073] It should be noted that, considering the complexity of the operating conditions, the temperature along the circumference of the preheating element 21 of the intake assembly 20 may not be uniform, resulting in variations in the arrangement of the heating wires 321. In this embodiment, different numbers of heating wires 321 can be arranged according to the heating requirements under different operating conditions, including one, two, three, etc., and the heating wires 321 can be arranged in zones to achieve different heating methods in the circumference. Simultaneously, the lead wires 322 can transmit electrical energy to the corresponding heating wires 321, enabling them to be energized and heated.

[0074] Referring again to 4a, 4b, and 4c in Figure 4, in some embodiments, the first heating component 30 may further include a first thermocouple 34. The first thermocouple 34 is disposed on the second annular component 31 and electrically connected to the first heating component 32. Thus, the temperature of the second annular component 31 can be detected in real time via the first thermocouple 34, allowing the controller to adjust the heating power of the first heating component 32 based on the temperature of the second annular component 31. This ensures that the temperature of the second annular component 31 fluctuates within a preset range, preventing excessively high or low temperatures from affecting the temperature control effect on the intake component 20. The first thermocouple 34 enables feedback temperature control, achieving closed-loop temperature regulation by the controller, thereby ensuring no temperature difference between the first heating component 32 and the preheating component 21, maintaining temperature balance, and ensuring the uniformity of the temperature of the preheating component 21.

[0075] To further improve the uniformity of temperature distribution in different areas of the second annular component 31, the first heating component 30 may include multiple first thermocouples 34. The multiple first thermocouples 34 are distributed along the circumference of the second annular component 31, so that the temperature of multiple areas of the second annular component 31 in the circumference direction can be detected respectively, so as to obtain the real-time temperature of multiple areas of the second annular component 31.

[0076] In addition, each first thermocouple 34 can be correspondingly set and connected to a corresponding heating wire 321. In this way, the controller can adjust the heating power of the corresponding heating wire 321 according to the temperature detected by each first thermocouple 34, thereby improving the temperature uniformity of multiple areas in the circumferential direction of the second annular member 31, which in turn helps to improve the temperature balance between the first heating component 30 and the preheating component 21.

[0077] Considering that the gas distribution element 22 of the air intake assembly 20 directly faces the wafer and is a core component directly related to the process, good temperature uniformity of the gas distribution element 22 is required. However, in general, the area of ​​the gas distribution element 22 is larger than the area of ​​the wafer, and there are structures such as the wafer, base, liner (e.g., sealing ring 12), and cavity 10 below the gas distribution element 22. The temperatures of these structures are different. For example, the temperature of the base is higher than that of the gas distribution element 22, while the temperature of the liner and cavity 10 is lower than that of the gas distribution element 22. Furthermore, the distance and angle between these structures and the lower surface of the gas distribution element 22 are also different. Therefore, the radiative heat transfer is also different, as shown in Figure 2.

[0078] Overall, the edge region of the gas distribution component 22 experiences greater heat dissipation, which varies with process conditions, such as different base temperatures, base heights, liner materials, process gas flow rates and pressures (different heat transfer rates between the center and edge), and wafer materials (different emissivity). As these conditions change, the heat dissipation in both the central and edge regions of the gas distribution component 22 also changes. Therefore, targeted and precise dynamic heat compensation for the edge region of the gas distribution component 22 is particularly crucial.

[0079] Based on the above, to further achieve a heat replenishment effect on the edge region of the intake assembly 20, the process chamber may also include a third heating assembly 60, as shown in Figures 1 and 2. This third heating assembly 60 surrounds the intake assembly 20 and is used to heat the edges of the intake assembly 20. With this configuration, the third heating assembly 60 can also transfer heat to the edges of the intake assembly 20 to compensate for the heat loss in the edge region, ensuring that there is no significant temperature difference between the edge region and the central region of the intake assembly 20, further improving the temperature uniformity of all regions of the intake assembly 20.

[0080] The third heating component 60 can be arranged around the air distribution component 22 of the air intake component 20 to provide heat compensation for the edge area of ​​the air distribution component 22 and ensure the temperature uniformity of each area of ​​the air distribution component 22.

[0081] The first heating component 30 is connected to the edge region of the preheating component 21 to compensate for the heat in the edge region of the preheating component 21 and ensure the uniformity of temperature in each region of the preheating component 21.

[0082] Based on the above settings, this embodiment of the application achieves heat compensation for the intake assembly 20 through the cooperation of the first heating component 30 and the third heating component 60, so as to alleviate the problem of large temperature difference between the edge area and the middle area caused by heat loss in the edge area of ​​the intake assembly 20, thereby improving the temperature uniformity of the entire intake assembly 20.

[0083] Referring to Figures 6 to 8, in some embodiments, the third heating assembly 60 may include a third heating element 61, a reflector 62, a light-transmitting cover 63, and a mounting base 64. The mounting base 64 is connected to the cavity 10. The reflector 62 is disposed on the mounting base 64, with its opening facing the edge of the air intake assembly 20. The light-transmitting cover 63 is disposed at the opening of the reflector 62, and the two form an installation space. The third heating element 61 is a light-emitting element and is disposed within the installation space. Thus, the light emitted by the light-emitting element can be reflected by the reflector 62 and then transmitted through the light-transmitting cover 63 to illuminate the edge of the air intake assembly 20. Based on this configuration, heat compensation is achieved by unidirectional radiation to the edge area of ​​the air intake assembly 20 through illumination. Furthermore, the direct heating via radiation from the light-emitting element allows for more precise heating, higher heating efficiency, and less thermal impact on other structures. Additionally, heat loss can be offset by adjusting the power of the light-emitting element, making it flexible and adaptable to various operating conditions, thus achieving adjustable heat compensation.

[0084] Because the light-emitting element has high thermal efficiency, it can convert most of the electrical energy into light energy, thus avoiding heat load and heat generation on components such as cavity 10 and inner lining. This effectively alleviates the impact of high temperature on the sealing and expansion properties of other components such as cavity 10 and inner lining, allowing for a higher upper limit of the process temperature used in this method.

[0085] In this embodiment, the mounting base 64 can be connected inside the cavity 10 to ensure the installation stability of the third heating component 60.

[0086] In some embodiments, the light-emitting element can be a lamp tube containing a high-temperature filament, i.e., the structure of the third heating element 61 shown in Figure 6, such as a tungsten wire, which radiates infrared light through the light emitted by the lamp tube to heat the edge area of ​​the air intake assembly 20.

[0087] To fix the high-temperature filament, multiple supports can be installed inside the lamp tube. These supports are arranged at intervals along the extension direction of the lamp tube. The high-temperature filament is connected to each of the supports to fix it and ensure its stability.

[0088] In other embodiments, the lamp tube can be replaced with multiple independent lamp beads and the structure of the third heating element 61 as shown in Figure 7. The amount of heat compensation can be adjusted by adjusting the heating power ratio of the lamp beads at different positions, thereby achieving more flexible heat compensation.

[0089] In addition, the mounting base 64 may have a concave structure, and the reflector 62 may be disposed in the concave structure and reflect the light emitted by the light-emitting element. The surface of the reflector 62 has a high reflectivity to light.

[0090] The reflective surface of the reflector 62 can be ground or polished to reduce its roughness and increase its reflectivity. For example, the roughness of the reflective surface can be less than or equal to Ra1.6, but other values ​​are also possible and are not specifically limited here.

[0091] Alternatively, a coating of a high-reflectivity material, such as gold plating, can be applied to the reflective surface to improve reflectivity.

[0092] Referring to Figure 8, in some embodiments, the light emitted by the light-emitting element toward the reflector 62 can be reflected by the reflector 62 to form parallel light, which is directed toward the edge region of the gas equalizer 22 to achieve precise heating. Additionally, a portion of the light emitted by the light-emitting element toward the light-transmitting cover 63 can also be reflected back to the reflector 62 by the reflective layer of the lamp wall, and then reflected toward the edge region of the gas equalizer 22 via the reflector 62. It should be noted that the reflective layer of the lamp wall and the reflector 62 can be arranged opposite each other to reflect light back to the reflector 62 through the reflective layer.

[0093] For example, the reflector 62 can have a curved reflective surface, such as an arc-shaped reflective surface, an elliptical arc-shaped reflective surface, etc., and of course, it can also be a multi-segment surface. The form of the reflector 62 is matched with the form of the light-emitting element so as to emit parallel light rays to the edge region of the air-shielding element 22. It should be noted here that the form of the reflector 62 and the form of the light-emitting element are not limited, as long as they can form parallel light rays.

[0094] In addition, the distance between the light-emitting element and the outer edge of the air-distributing element 22 can be set according to the actual working conditions, and no specific limitation is made here.

[0095] Example 1:

[0096] The preheating component 21 is set to a temperature of 500℃. With the first heating component 32 and a labyrinth insulation method with a labyrinth insulation wall thickness of 2mm, the simulation results without the third heating component 60 for edge heating are shown in Figure 9a, and the simulation results with the third heating component 60 for edge heating are shown in Figure 9b. The comparison shows that without the third heating component 60, the maximum temperature difference between the central and edge regions of the gas distribution component 22 is 6.3℃, while with the third heating component 60, the maximum temperature difference is 3℃. Therefore, setting the third heating component 60 is beneficial for improving the temperature uniformity of the gas distribution component 22.

[0097] Referring to Figure 1, in some embodiments, the cavity 10 may include a cover plate 11, a sealing ring 12, and a protective plate 13. The sealing ring 12 is disposed in the inner cavity of the cavity 10 and surrounds the heat insulation component 40 and the air intake component 20. The top end of the sealing ring 12 is provided with an outer flange 121, which is connected to the upper port of the cavity 10. The cover plate 11 is connected to the outer flange 121, and the protective plate 13 is connected to the cover plate 11. The third heating component 60 is connected to the bottom end of the sealing ring 12, thereby ensuring the installation stability of the third heating component 60.

[0098] For example, the protective plate 13 can be installed above the cover plate 11 by means of clamps, snaps, or screws, primarily for protection and aesthetic purposes, without the need for sealing. Additionally, the cover plate 11 and the sealing ring 12, as well as the sealing ring 12 and the cavity 10, can be sealed by sealing rings 70 (e.g., rubber rings) and tightened by screws.

[0099] In this configuration, the mounting base 64 can be connected to the bottom end of the sealing ring 12 to ensure the stability of the mounting base 64, thereby ensuring the installation stability of the third heating component 60. For example, the mounting base 64 can be connected to the bottom end of the sealing ring 12 by welding, bonding, screwing, riveting, snap-fitting, etc., as long as installation stability can be ensured; the specific form is not limited.

[0100] The end of the heat insulation component 40 away from the first heating component 30 is connected to the cover plate 11. This ensures the installation stability of the heat insulation component 40, and the cover plate 11 supports the heat insulation component 40 and the first heating component 30 and the air intake component 20 that are suspended from it.

[0101] It should be noted that the specific forms and functions of structures such as cover plate 11, sealing ring 12, and protective plate 13 can be found in relevant technologies and will not be elaborated here.

[0102] Based on the aforementioned process chamber, this application also discloses a semiconductor process apparatus, which includes the aforementioned process chamber. The semiconductor process apparatus can be a CVD device, an atomic deposition (ALD) device, etc., used in high-temperature processes, such as CVD TiN or ALD TiN. For example, in a high-temperature CVD process, the substrate temperature reaches above 550°C, and the temperature of the gas distribution element 22 needs to reach above 400°C, requiring efficient heating and precise temperature control of the gas distribution element 22.

[0103] During the process, the process gas enters the air inlet chamber M between the preheating component 21 and the gas equalization component 22 through the air inlet pipe 23. It is fully diffused and divided in the air inlet chamber M, and then passes through the gas equalization hole of the gas equalization component 22 into the core reaction zone of the cavity 10. The process gas is preheated during the flow process.

[0104] In summary, the embodiments of this application can achieve effective heat insulation and precise heat replenishment of the edge area of ​​the intake component 20, thereby improving the temperature uniformity of the edge and central areas of the intake component 20; the linkage and cooperation of the two heating methods through the first heating component 30 and the third heating component 60 can improve the uniformity and flexibility of heating; and the heat insulation effect is improved by extending the heat transfer path, thereby reducing heat loss.

[0105] The embodiments of this application have been described above with reference to the accompanying drawings. However, this application is not limited to the specific embodiments described above. The specific embodiments described above are merely illustrative and not restrictive. Those skilled in the art can make many other forms under the guidance of this application without departing from the spirit and scope of the claims, and all of these forms are within the protection scope of this application.

Claims

1. A process chamber, characterized in that, include: The cavity, air intake assembly, first heating assembly, and heat insulation assembly; The air intake assembly is located in the cavity and is used to introduce process gas into the cavity. The first heating component is disposed in the cavity and connected to the edge region of the air intake component, for heating the edge region of the air intake component; The heat insulation component connects the first heating component and the cavity, and is used to provide heat insulation between the first heating component and the cavity.

2. The process chamber according to claim 1, characterized in that, The heat insulation component includes a first annular member, one end of which along its own axis is connected to the first heating component, and the other end of which along the axis is connected to the cavity. The sidewall of the first annular component is bent to form a bent structure.

3. The process chamber according to claim 2, characterized in that, The sidewall of the first annular member includes at least two bent segments, and the at least two bent segments are connected along the axial direction to form the bent structure.

4. The process chamber according to claim 3, characterized in that, The bending structure is a maze structure.

5. The process chamber according to claim 1, characterized in that, The first heating component includes a second annular component, a first heating component, and a sealing component; The second annular component is connected between the edge area of ​​the heat insulation component and the air intake component. The side wall of the second annular component is provided with a receiving groove. The first heating component is disposed in the receiving groove, and the sealing component is disposed at the opening of the receiving groove.

6. The process chamber according to claim 5, characterized in that, The first heating element includes at least one heating wire and at least one lead wire; At least one of the heating wires is arranged circumferentially along the second annular member, and each of the heating wires extends circumferentially along the second annular member; At least one of the lead wires is connected to the corresponding heating wire.

7. The process chamber according to claim 5 or 6, characterized in that, The first heating component further includes a first thermocouple, which is disposed on the second annular component and electrically connected to the first heating component for detecting the temperature of the second annular component.

8. The process chamber according to claim 1, characterized in that, The heat insulation component includes a first annular component, and the first heating component includes a second annular component; The first annular component is fixedly connected to the second annular component or is integrally formed with it.

9. The process chamber according to any one of claims 1 to 6 and 8, characterized in that, The air intake assembly includes a preheating element and an air distribution element arranged axially along the process chamber. The preheating element is used to preheat the process gas, and the air distribution element is used to distribute the gas into the chamber. The first heating component is connected to the edge region of the preheating component.

10. The process chamber according to claim 1, characterized in that, The process chamber also includes a third heating component disposed within the chamber, which surrounds the air intake component and is used to heat the edges of the air intake component.

11. The process chamber according to claim 10, characterized in that, The third heating component includes a third heating element, a reflector, a light-transmitting cover, and a mounting base; The mounting base is connected to the cavity; The reflector is disposed on the mounting base, and the opening of the reflector faces the edge of the air intake assembly; The light-transmitting cover is disposed at the opening of the reflective cover, and the two form an installation space; The third heating element is a light-emitting element located in the installation space. The light emitted by the light-emitting element is reflected by the reflector and then shines through the light-transmitting cover onto the edge of the air intake assembly.

12. The process chamber according to claim 10 or 11, characterized in that, The cavity includes a cover plate, a sealing ring, and a protective plate; The sealing ring is disposed in the inner cavity of the cavity and surrounds the heat insulation component and the air intake component. The top end of the sealing ring is provided with an outer flange, which is connected to the upper port of the cavity. The cover plate is connected to the outer flange, and the protective plate is connected to the cover plate. The third heating component is connected to the bottom end of the sealing ring; The end of the heat insulation component away from the first heating component is connected to the cover plate.

13. The process chamber according to claim 10 or 11, characterized in that, The air intake assembly includes a preheating element and an air distribution element arranged axially along the process chamber. The preheating element is used to preheat the process gas, and the air distribution element is used to distribute the gas into the chamber. The third heating component is arranged around the gas equalizer.

14. A semiconductor process apparatus, characterized in that, Includes the process chamber as described in any one of claims 1 to 13.

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