High frequency module

Abstract

A high-frequency module (1) comprises: a module substrate (90) having main surfaces (90a, 90b); an amplifier (10); amplifiers (11-14) disposed on the main surface (90a); a transformer (21) connected between the amplifier (10) and the amplifiers (11, 12); a transformer (22) connected between the amplifier (10) and the amplifiers (13, 14); a filter (51) connected to the output terminals of the amplifiers (11, 12); a filter (51) connected to the output terminals of the amplifiers (11,12); and a filter (53) connected to the output terminals of the amplifiers (13, 14) and having a passband more toward the low frequency side than the filter (51). The transformer (21) includes an output-side coil (212). The transformer (22) includes an output-side coil (222). In plan view of the module substrate (90), the output-side coil (212) and the output-side coil (222) overlap at least partially. The output-side coil (212) is disposed closer to the main surface (90a) side than the output-side coil (222).

Description

High-frequency module

[0001] The present invention relates to a high-frequency module.

[0002] Patent Document 1 discloses a high-frequency module having a configuration in which a pre-stage amplifying element, a pair of differential post-stage amplifying elements, and an inter-stage transformer connected between the pre-stage amplifying element and the pair of post-stage amplifying elements are arranged on a module substrate.

[0003] Japanese Patent Application Laid-Open No. 2021-145290

[0004] With the advancement of multi-band technology, there is a demand for high-frequency modules that can transmit signals in multiple bands with low loss. In the high-frequency module disclosed in Patent Document 1, if multiple sets of amplifier circuits, each consisting of a pre-stage amplifier element, a post-stage amplifier element, and an interstage transformer, are arranged on a module substrate to support signal transmission in multiple bands, the circuit size may increase, resulting in degradation of transmission characteristics.

[0005] The present invention has been made to solve the above-mentioned problems, and an object of the present invention is to provide a multi-band radio frequency module in which deterioration of transmission characteristics is suppressed.

[0006] In order to achieve the above object, a high-frequency module according to one aspect of the present invention includes a module substrate having first and second main surfaces facing each other, a pre-stage amplifier, a first post-stage amplifier arranged on the first main surface, a second post-stage amplifier arranged on the first main surface, a first matching circuit connected between the output terminal of the pre-stage amplifier and the input terminal of the first post-stage amplifier, a second matching circuit connected between the output terminal of the pre-stage amplifier and the input terminal of the second post-stage amplifier, a first filter connected to the output terminal of the first post-stage amplifier and having a pass band that includes a transmission band of a first band, and a second filter connected to the output terminal of the second post-stage amplifier and having a pass band that includes a transmission band of a second band that is lower in frequency than the first band, wherein the first matching circuit includes a first inductor configured by a planar coil formed on the module substrate, and the second matching circuit includes a second inductor configured by a planar coil formed on the module substrate, wherein the first inductor and the second inductor at least partially overlap when the module substrate is viewed in a planar view, and the first inductor is arranged closer to the first main surface of the module substrate than the second inductor.

[0007] Also, a high-frequency module according to one aspect of the present invention includes a module substrate having a first main surface and a second main surface facing each other, a first pre-stage amplifier and a second pre-stage amplifier, a first post-stage amplifier arranged on the first main surface, a second post-stage amplifier arranged on the first main surface, a first matching circuit connected between an output end of the first pre-stage amplifier and an input end of the first post-stage amplifier, a second matching circuit connected between the output end of the second pre-stage amplifier and an input end of the second post-stage amplifier, and a first filter connected to the output end of the first post-stage amplifier and having a passband including a transmission band of a first band. and a second filter connected to the output end of the second subsequent-stage amplifier and having a passband including a transmission band of a second band that is lower in frequency than the first band, wherein the first matching circuit includes a first inductor configured with a planar coil formed on the module substrate, and the second matching circuit includes a second inductor configured with a planar coil formed on the module substrate, and when the module substrate is viewed in a plane, the first inductor and the second inductor at least partially overlap, and the first inductor is located closer to the first main surface of the module substrate than the second inductor.

[0008] Furthermore, a high-frequency module according to one aspect of the present invention includes a module substrate having first and second main surfaces facing each other, a pre-amplifier, a post-amplifier disposed on the first main surface, a first switch having a first common terminal connected to an output end of the pre-amplifier, a first selection terminal connected to an input end of the post-amplifier, and a second selection terminal connected to the input end of the post-amplifier, a first matching circuit connected between the first selection terminal and the input end of the post-amplifier, a second matching circuit connected between the second selection terminal and the input end of the post-amplifier, a first filter having a passband including a transmission band of a first band, a second filter having a passband including a transmission band of a second band that is lower in frequency than the first band, the second common terminal connected to the output end of the post-amplifier, and a second switch having a third selection terminal connected to the input terminal of the first filter and a fourth selection terminal connected to the input terminal of the second filter, wherein the first matching circuit includes a first inductor configured with a planar coil formed on the module substrate, and the second matching circuit includes a second inductor configured with a planar coil formed on the module substrate, wherein when the first common terminal and the first selection terminal are connected, the second common terminal and the third selection terminal are connected, and when the first common terminal and the second selection terminal are connected, the second common terminal and the fourth selection terminal are connected, and when the module substrate is viewed in a plane, the first inductor and the second inductor at least partially overlap, and the first inductor is positioned closer to the first main surface of the module substrate than the second inductor.

[0009] According to the present invention, it is possible to provide a multi-band compatible high frequency module in which deterioration of transmission characteristics is suppressed.

[0010] FIG. 1 is a circuit diagram of a radio frequency module and a communication device according to a first embodiment. FIG. 2A is a plan view of the radio frequency module according to the first embodiment. FIG. 2B is a cross-sectional view of the radio frequency module according to the first embodiment. FIG. 3A is a plan view of the radio frequency module according to the second embodiment. FIG. 3B is a cross-sectional view of the radio frequency module according to the second embodiment. FIG. 4A is a plan view of the radio frequency module according to the third embodiment. FIG. 4B is a cross-sectional view of the radio frequency module according to the third embodiment. FIG. 5 is a plan view of the radio frequency module according to the fourth embodiment. FIG. 6A is a plan view of the radio frequency module according to the fifth embodiment. FIG. 6B is a cross-sectional view of the radio frequency module according to the fifth embodiment. FIG. 7A is a circuit diagram of the radio frequency module according to the sixth embodiment. FIG. 7B is a plan view of the radio frequency module according to the sixth embodiment. FIG. 8A is a circuit diagram of the radio frequency module according to the seventh embodiment. FIG. 8B is a plan view of the radio frequency module according to the seventh embodiment. FIG. 8C is a cross-sectional view of the radio frequency module according to the seventh embodiment. FIG. 9A is a plan view of the radio frequency module according to the eighth embodiment. FIG. 9B is a cross-sectional view of the radio frequency module according to the eighth embodiment. 10A is a circuit diagram of a high-frequency module in accordance with Example 9. FIG. 10B is a plan view of the high-frequency module in accordance with Example 9. FIG. 10C is a cross-sectional view of the high-frequency module in accordance with Example 9.

[0011] Hereinafter, embodiments of the present disclosure will be described in detail with reference to the drawings. Note that the embodiments described below are all comprehensive or specific examples. The numerical values, shapes, materials, components, component arrangements, and connection forms shown in the following embodiments are merely examples and are not intended to limit the present invention. Among the components in the following embodiments, components that are not recited in independent claims will be described as optional components. Furthermore, the sizes or size ratios of the components shown in the drawings are not necessarily strict.

[0012] It should be noted that the drawings are schematic diagrams in which emphasis, omission, or adjustment of proportions has been appropriately made to illustrate the present invention, and are not necessarily strictly illustrated, and may differ from the actual shapes, positional relationships, and proportions. In the drawings, the same reference numerals are used to denote substantially the same components, and redundant explanations may be omitted or simplified.

[0013] In the circuit configurations of the present disclosure, "connected" includes not only direct connection by connection terminals and / or wiring conductors, but also electrical connection via matching elements or switch circuits. "Connected between A and B" means connected to both A and B between A and B.

[0014] In the present invention, a "terminal" means a point where a conductor within an element terminates. Note that a terminal is not limited to a single point, but may be any point (node) on the conductor between elements or the entire conductor, provided that the impedance of the conductor between elements is sufficiently low.

[0015] Furthermore, in the circuit element layout of the present disclosure, "circuit element A is arranged in series on path B" means that the signal input terminal and signal output terminal of circuit element A are connected to two wirings that form at least a part of path B, respectively. At least one of the two wirings may be an electrode or a terminal.

[0016] In the following figures, the x-axis and y-axis are axes that are orthogonal to each other on a plane parallel to the main surface of the substrate. Specifically, when the substrate has a rectangular shape in a plan view, the x-axis is parallel to a first side of the substrate, and the y-axis is parallel to a second side that is orthogonal to the first side of the substrate. The z-axis is an axis perpendicular to the main surface of the substrate, with its positive direction indicating the upward direction and its negative direction indicating the downward direction.

[0017] Furthermore, terms indicating the relationship between elements, such as "parallel" and "perpendicular," terms indicating the shape of elements, such as "rectangle," and numerical ranges do not only represent strict meanings, but also include substantially equivalent ranges, for example, including an error of a few percent.

[0018] Furthermore, in the component placement of the present invention, "when the substrate (main surface) is viewed in plan" means that the object is viewed by orthogonally projecting it onto the xy plane from the positive side of the z axis. "A overlaps with B in plan view" means that at least a portion of the area of ​​A orthogonally projected onto the xy plane overlaps with at least a portion of the area of ​​B orthogonally projected onto the xy plane. Furthermore, "A is placed between B and C" means that at least one of multiple line segments connecting any point in B and any point in C passes through A.

[0019] In the component placement of the present invention, "components are placed on a substrate" includes components being placed on the main surface of a substrate and components being placed within a substrate. "Components are placed on the main surface of a substrate" includes components being placed in contact with the main surface of a substrate, as well as components being placed above the main surface without contacting the main surface (for example, components being stacked on top of other components placed in contact with the main surface). "Components are placed on the main surface of a substrate" may also include components being placed in recesses formed in the main surface. "Components are placed within a substrate" includes components being encapsulated within a module substrate, as well as components being entirely placed between the two main surfaces of a substrate but partially not covered by the substrate, and components being only partially placed within the substrate.

[0020] In the following embodiments, the passband of a filter is defined as a frequency band between two frequencies that are 3 dB higher than the minimum value of insertion loss within the passband.

[0021] In the present disclosure, the term "band" refers to at least one of an uplink operating band and a downlink operating band of a frequency band predefined by a standardization organization (e.g., 3GPP (registered trademark), IEEE (Institute of Electrical and Electronics Engineers)), etc., for a communication system built using a radio access technology (RAT). In this embodiment, examples of communication systems that can be used include, but are not limited to, an LTE (Long Term Evolution) system, a 5G (5th Generation)-NR (New Radio) system, and a WLAN (Wireless Local Area Network) system. Note that the uplink operating band of a frequency band refers to a frequency range designated for uplink within that frequency band. Furthermore, the downlink operating band of a frequency band refers to a frequency range designated for downlink within that frequency band.

[0022] In the following embodiments, a transformer is defined as follows: The transformer is composed of an input coil and an output coil. The output coil is defined as a wiring conductor arranged along the input coil and disposed in a section where a first distance from the input coil is equal to or less than a predetermined value. In this case, the wiring conductors located on both sides of the section are at a second distance from the input coil that is greater than the predetermined value, and one end and the other end of the output coil are points where the distance of the wiring conductor to the input coil changes from the first distance to a second distance. In addition, the input coil is defined as a wiring conductor arranged along the output coil and disposed in a section where the first distance from the output coil is equal to or less than the predetermined value. In this case, the wiring conductors located on both sides of the section are at a second distance from the output coil that is greater than the predetermined value, and one end and the other end of the input coil are points where the distance of the wiring conductor to the secondary coil changes from the first distance to the second distance.

[0023] (Embodiments) [1 Circuit Configuration of High-Frequency Module 1 and Communication Device 4 According to Example 1] The circuit configuration of a high-frequency module 1 and a communication device 4 according to the present embodiment will be described with reference to Fig. 1. Fig. 1 is a circuit configuration diagram of a high-frequency module 1 and a communication device 4 according to the embodiment. As shown in the figure, the communication device 4 according to the present embodiment includes a high-frequency module 1, an antenna 2, and an RF signal processing circuit (RFIC: Radio Frequency Integrated Circuit) 3.

[0024] The high-frequency module 1 transmits high-frequency signals between the antenna 2 and the RFIC 3. The detailed circuit configuration of the high-frequency module 1 will be described later.

[0025] The antenna 2 is connected to the antenna connection terminal 100 of the high-frequency module 1 and transmits a high-frequency signal output from the high-frequency module 1. The antenna 2 may also receive a high-frequency signal from an external source and output it to the high-frequency module 1.

[0026] The RFIC 3 is an example of a signal processing circuit that processes high-frequency signals. Specifically, the RFIC 3 performs signal processing, such as upconversion, on a transmission signal input from a baseband signal processing circuit (BBIC, not shown), and outputs the transmission signal generated by the signal processing to the transmission path of the high-frequency module 1. The RFIC 3 may also perform signal processing, such as downconversion, on a reception signal input via the reception path of the high-frequency module 1, and output the reception signal generated by the signal processing to the BBIC. The RFIC 3 also has a control unit that controls the high-frequency module 1. Note that some or all of the functions of the RFIC 3 as the control unit may be implemented outside the RFIC 3, for example, in the BBIC or the high-frequency module 1. The control circuit 70 included in the high-frequency module 1 may also be implemented in the RFIC 3.

[0027] The RFIC 3 also functions as a control unit that controls the power supply voltage Vcc and bias voltage Vb supplied to each amplifier included in the high frequency module 1 .

[0028] The RFIC 3 also functions as a control unit that controls the connections of the switches 41, 42, and 43 of the high-frequency module 1 based on the band (frequency band) and amplification mode used.

[0029] In the communication device 4 according to this embodiment, the antenna 2 is not an essential component.

[0030] Next, a description will be given of the circuit configuration of the high-frequency module 1. As shown in Fig. 1, the high-frequency module 1 includes amplifiers 10, 11, 12, 13, and 14, transformers 21, 22, 31, and 32, filters 51, 52, and 53, switches 41, 42, and 43, a control circuit 70, matching circuits 61 and 62, an antenna connection terminal 100, and a signal input terminal 110.

[0031] The amplifier 10 is an example of a pre-stage amplifier, and is a power amplifier that amplifies a high-frequency signal input from a signal input terminal 110 .

[0032] Amplifier 11 is an example of a first amplifying element and is a power amplifier that amplifies a high-frequency signal output from one end of the secondary coil of transformer 21. Amplifier 12 is an example of a second amplifying element and is a power amplifier that amplifies a high-frequency signal output from the other end of the secondary coil of transformer 21. Amplifiers 11 and 12 constitute a first post-stage amplifier.

[0033] Amplifier 13 is an example of a third amplifying element and is a power amplifier that amplifies the high-frequency signal output from one end of the secondary coil of transformer 22. Amplifier 14 is an example of a fourth amplifying element and is a power amplifier that amplifies the high-frequency signal output from the other end of the secondary coil of transformer 22. Amplifiers 13 and 14 constitute a second post-stage amplifier.

[0034] Each of the amplifiers 10 to 14 has an amplifying transistor. The amplifying transistors of the amplifiers 10 to 14 are, for example, field-effect transistors or bipolar transistors. The amplifier 10 is configured, for example, using a complementary metal oxide semiconductor (CMOS) and is manufactured using an SOI (silicon on insulator) process. The amplifiers 11 to 14 are configured, for example, using at least one of GaAs, SiGe, and GaN.

[0035] The control circuit 70 is connected to the amplifiers 10 to 14 and adjusts the bias current and power supply voltage supplied to the amplifiers 10 to 14 based on a control signal from the RFIC 3, for example.

[0036] The transformer 21 is an example of a first transformer and an example of a first matching circuit, and has an input coil 211 and an output coil 212 that are electromagnetically coupled to each other. The transformer 21 is connected between the output end of the amplifier 10 and the input ends of the amplifiers 11 and 12 (first subsequent-stage amplifiers). The input coil 211 is an example of a third inductor, and the output coil 212 is an example of a first inductor.

[0037] The transformer 22 is an example of a second transformer and an example of a second matching circuit, and has an input coil 221 and an output coil 222 that are electromagnetically coupled to each other. The transformer 22 is connected between the output end of the amplifier 10 and the input ends of the amplifiers 13 and 14 (second subsequent-stage amplifiers). The input coil 221 is an example of a fourth inductor, and the output coil 222 is an example of a second inductor.

[0038] The transformer 31 is an example of an output matching circuit, and has an input coil 311 and an output coil 312 that are electromagnetically coupled to each other. The transformer 31 is connected between the output ends of the amplifiers 11 and 12 and the filters 51 and 52. Specifically, one end of the input coil 311 is connected to the output end of the amplifier 11, the other end of the input coil 311 is connected to the output end of the amplifier 12, one end of the output coil 312 is connected to the matching circuit 61, and the other end of the output coil 312 is connected to ground.

[0039] The transformer 32 is an example of an output matching circuit, and has an input coil 321 and an output coil 322 that are electromagnetically coupled to each other. The transformer 32 is connected between the output ends of the amplifiers 13 and 14 and the filter 53. Specifically, one end of the input coil 321 is connected to the output end of the amplifier 13, the other end of the input coil 321 is connected to the output end of the amplifier 14, one end of the output coil 322 is connected to the matching circuit 62, and the other end of the output coil 322 is connected to ground.

[0040] The filter 51 is an example of a first filter, and can be connected to the output ends of the amplifiers 11 and 12 (first subsequent stage amplifiers) via the transformer 31, the matching circuit 61, and the switch 42, and has a pass band that includes the transmission band of band A (first band).

[0041] The filter 52 is an example of a first filter, and can be connected to the output ends of the amplifiers 11 and 12 (first post-stage amplifiers) via the transformer 31, the matching circuit 61, and the switch 42. The filter 52 has a passband that includes the transmission band of band B (first band). Band A and band B belong to, for example, the high band group (HB: 2.4 GHz-2.8 GHz).

[0042] The filter 53 is an example of a second filter, and can be connected to the output ends of the amplifiers 13 and 14 (second post-stage amplifiers) via the transformer 32, the matching circuit 62, and the switch 42. The filter 53 has a passband that includes the transmission band of band C (second band). Band C is located on the lower frequency side than band A and band B. Band C belongs to, for example, the middle band group (MB: 1.5 GHz-2.4 GHz).

[0043] The switch 41 is an example of a first switch and has a common terminal 41a (first common terminal), a selection terminal 41b (first selection terminal), and a selection terminal 41c (second selection terminal). The switch 41 switches between the connection between the common terminal 41a and the selection terminal 41b and the connection between the common terminal 41a and the selection terminal 41c. The common terminal 41a is connected to the output terminal of the amplifier 10, the selection terminal 41b is connected to one end of the input coil 211, and the selection terminal 41c is connected to one end of the input coil 221.

[0044] The switch 42 is an example of a second switch and has common terminals 42a and 42b and selection terminals 42c, 42d, and 42e. The switch 42 switches between the connection between the common terminal 42a and the selection terminal 42c and the connection between the common terminal 42a and the selection terminal 42d, and also switches between the connection and disconnection between the common terminal 42b and the selection terminal 42e. The common terminal 42a is connected to one end of the output coil 312 via a matching circuit 61, the common terminal 42b is connected to one end of the output coil 322 via a matching circuit 62, the selection terminal 42c is connected to the filter 51, the selection terminal 42d is connected to the filter 52, and the selection terminal 42e is connected to the filter 53.

[0045] According to the above connection configuration, the switch 42 switches between connection and disconnection between the amplifiers 11 and 12 and the filter 51 (or the filter 52), and between connection and disconnection between the amplifiers 13 and 14 and the filter 53. That is, the filters 51 and 52 are connected to the amplifiers 11 and 12, and the filter 53 is connected to the amplifiers 13 and 14. That is, the signal path connecting the transformer 21, the amplifiers 11 and 12, the transformer 31, the matching circuit 61, the switch 42, and the filter 51 or 52 is a first signal path that transmits signals in the high-band group. Furthermore, the signal path connecting the transformer 22, the amplifiers 13 and 14, the transformer 32, the matching circuit 62, the switch 42, and the filter 53 is a second signal path that transmits signals in the middle-band group.

[0046] The switch 43 is an example of an antenna switch, and connects one of the filters 51 , 52 , and 53 to the antenna connection terminal 100 .

[0047] One end of the output coil 212 is connected to the input terminal of the amplifier 11, and the other end of the output coil 212 is connected to the input terminal of the amplifier 12. The other ends of the input coil 211 and the input coil 221 are connected to ground.

[0048] According to the above circuit configuration, it is possible to provide a multi-band radio frequency module 1 capable of transmitting high band signals and middle band signals.

[0049] In the high-frequency module according to the modification of the first embodiment, the first rear-stage amplifier may not include amplifiers 11 and 12 arranged in parallel and may be configured with a single first amplifier. Furthermore, the second rear-stage amplifier may not include amplifiers 13 and 14 arranged in parallel and may be configured with a single second amplifier. That is, in the high-frequency module according to this modification, transformers 21, 22, 31, and 32 are not provided, the selection terminal 41b is connected to the input terminal of the first amplifier, the selection terminal 41c is connected to the input terminal of the second amplifier, the output terminal of the first amplifier is connected to the common terminal 42a, and the output terminal of the second amplifier is connected to the common terminal 42b. Furthermore, a first inductor is connected between a path connecting the selection terminal 41b and the input terminal of the first amplifier and ground, and a second inductor is connected between a path connecting the selection terminal 41c and the input terminal of the second amplifier and ground.

[0050] Furthermore, the matching circuits 61 and 62, the switches 42 and 43, and the filter 52 do not necessarily have to be included in the high-frequency module 1.

[0051] [2 Layout of the High-Frequency Module 1 According to the First Embodiment] The layout of the circuit components constituting the high-frequency module 1 according to the first embodiment will be described. FIG. 2A is a plan view of the high-frequency module 1 according to the first embodiment. FIG. 2B is a cross-sectional view of the high-frequency module 1 according to the first embodiment. FIG. 2A is a plan view (perspective) of the module substrate 90 from the positive side of the z-axis. FIG. 2B is a cross-sectional view taken along line IIB-IIB in FIG. 2A. Note that in FIG. 2A, symbols representing the components (semiconductor ICs 71, 72, and 73) may be attached to facilitate understanding of the layout of the components, but the components are not actually labeled with such symbols. Furthermore, the orientation of the symbols is unrelated to the signal flow in each component and the connection relationships between the components. This also applies to the following second to ninth embodiments, and the orientation of the symbols attached to each component is unrelated to the signal flow in each component and the connection relationships between the components.

[0052] As shown in Fig. 2A, the high-frequency module 1 includes a module substrate 90 in addition to the circuit components shown in Fig. 1. Although Figs. 2A and 2B do not show all of the circuit components shown in Fig. 1, filters 51 to 53, switches 41 to 43, control circuit 70, matching circuits 61 and 62, antenna connection terminal 100, and signal input terminal 110, which are not shown in Fig. 2A, may also be disposed on module substrate 90. Also, in Figs. 2A and 2B, some of the wiring connecting module substrate 90 and the circuit components is omitted.

[0053] The module substrate 90 has opposing main surfaces 90a and 90b, and is a substrate on which circuit components constituting the high-frequency module 1 are mounted. As the module substrate 90, for example, a low-temperature co-fired ceramics (LTCC) substrate having a laminated structure of multiple dielectric layers, a high-temperature co-fired ceramics (HTCC) substrate, a component-embedded substrate, a substrate having a redistribution layer (RDL), a printed circuit board, or the like can be used.

[0054] 2A and 2B, amplifiers 10 to 14 are arranged on a main surface 90a of module substrate 90. Transformers 21, 22, 31, and 32 are also arranged inside module substrate 90. Note that at least a portion of each of transformers 21, 22, 31, and 32 may be exposed on main surface 90a or 90b of module substrate 90.

[0055] Amplifier 10 is included in semiconductor IC 73 (third semiconductor IC). Amplifiers 11 and 12 are included in semiconductor IC 71 (first semiconductor IC). Amplifiers 13 and 14 are included in semiconductor IC 72 (second semiconductor IC). Semiconductor IC 73 is configured using, for example, CMOS, and specifically, is fabricated using an SOI process. Semiconductor ICs 71 and 72 are configured from at least one of GaAs, SiGe, and GaN, for example. Semiconductor IC 73 may also include switch 41.

[0056] The input coil 211 and the output coil 212 of the transformer 21 are each formed as planar coils on the module substrate 90. The input coil 221 and the output coil 222 of the transformer 22 are each formed as planar coils on the module substrate 90. The input coil 311 and the output coil 312 of the transformer 31 are each formed as planar coils on the module substrate 90. The input coil 321 and the output coil 322 of the transformer 32 are each formed as planar coils on the module substrate 90. The region where the input coil 211 is formed and the region where the output coil 212 is formed are arranged so as to at least partially overlap when the module substrate 90 is viewed from above. The region where the input coil 221 is formed and the region where the output coil 222 is formed are arranged so as to at least partially overlap when the module substrate 90 is viewed from above. The region where the input coil 311 is formed and the region where the output coil 312 is formed are arranged so as to at least partially overlap when the module substrate 90 is viewed from above. The region where the input coil 321 is formed and the region where the output coil 322 is formed are arranged so as to at least partially overlap each other when the module substrate 90 is viewed from above.

[0057] Here, when the module substrate 90 is viewed in a plane, the output side coil 212 and the output side coil 222 at least partially overlap, and when the module substrate 90 is viewed in cross section, the output side coil 212 is positioned closer to the main surface 90a of the module substrate 90 than the output side coil 222.

[0058] This allows the output coil 212 and the output coil 222 to be arranged overlapping in the normal direction of the module substrate 90, thereby reducing the area of ​​the high-frequency module 1. Furthermore, the parasitic inductance components added to the output coils 212 and 222 have a greater effect on the transmission characteristics as the frequency of the high-frequency signal transmitted through the high-frequency module 1 increases. In contrast, because the output coil 212 is arranged closer to the main surface 90a than the output coil 222, the distance between the amplifiers 11 and 12 arranged on the main surface 90a and the output coil 212 can be made shorter than the distance between the amplifiers 13 and 14 arranged on the main surface 90a and the output coil 222. This shortens the wiring connecting the output coil 212, which transmits higher-frequency signals, to the amplifiers 11 and 12, effectively suppressing degradation of the signal transmission characteristics in the first signal path. This allows for a multi-band high-frequency module 1 with suppressed degradation of the transmission characteristics.

[0059] As shown in FIG. 2B , when the module substrate 90 is viewed from above, the transformers 21 and 22 may at least partially overlap, and the transformer 21 may be disposed closer to the main surface 90 a of the module substrate 90 than the transformer 22.

[0060] According to the above configuration, the transformers 21 and 22 are arranged overlapping in the normal direction of the module substrate 90, thereby reducing the area of ​​the high-frequency module 1. Furthermore, the length of the connection wiring between the output coil 212, which transmits signals on the higher frequency side, and the amplifiers 11 and 12 can be shortened, effectively suppressing deterioration of the signal transmission characteristics in the first signal path. This makes it possible to provide a multi-band high-frequency module 1 in which deterioration of the transmission characteristics is suppressed.

[0061] When module substrate 90 is viewed from above, transformers 21 and 22 are disposed between semiconductor IC 71 and semiconductor IC 72 .

[0062] This allows the distance between the output coil 212 and the amplifiers 11 and 12, and the distance between the output coil 222 and the amplifiers 13 and 14 to be shortened in a balanced manner, thereby suppressing deterioration of the signal transmission characteristics in the first signal path and the second signal path.

[0063] Furthermore, in this embodiment, by arranging the amplifiers 10 to 14 on the main surface 90a of the module substrate 90, the transformers 21 and 22 connected to the amplifiers 10 to 14 can be arranged on the main surface 90a side of the module substrate 90, thereby making it possible to make the module substrate 90 thinner.

[0064] In the high-frequency module according to the modified example of Example 1, when the module substrate 90 is viewed in a plan view, the first inductor and the second inductor at least partially overlap, and the first inductor is positioned closer to the main surface 90a of the module substrate 90 than the second inductor.

[0065] This arrangement allows the first inductor and the second inductor to be arranged overlapping in the normal direction of the module substrate 90, thereby reducing the area of ​​the high-frequency module. Furthermore, the parasitic inductance components added to the first inductor and the second inductor have a greater effect on the transmission characteristics as the frequency of the high-frequency signal transmitted through the high-frequency module increases. In contrast, since the first inductor is arranged closer to the main surface 90a than the second inductor, the distance between the first amplifier arranged on the main surface 90a and the first inductor can be made shorter than the distance between the second amplifier arranged on the main surface 90a and the second inductor. This shortens the wiring connecting the first inductor and the first amplifier, which transmits signals at higher frequencies, effectively suppressing degradation of the signal transmission characteristics in the first signal path. This allows for a multi-band high-frequency module with suppressed degradation of the transmission characteristics.

[0066] [3 Layout of the High-Frequency Module 1A According to the Second Embodiment] A description will be given of the layout of circuit components constituting the high-frequency module 1A according to the second embodiment. Note that the circuit configuration of the high-frequency module 1A according to the second embodiment is the same as the circuit configuration of the high-frequency module 1 according to the first embodiment, and therefore description of the circuit configuration will be omitted.

[0067] Fig. 3A is a plan view of a high-frequency module 1A according to a second embodiment. Fig. 3B is a cross-sectional view of the high-frequency module 1A according to the second embodiment. Fig. 3A is a plan view (see-through) of a module substrate 90 from the positive side of the z-axis. Fig. 3B is a cross-sectional view taken along line IIIB-IIIB in Fig. 3A.

[0068] As shown in Fig. 3A, the high-frequency module 1A includes a module substrate 90 in addition to the circuit components shown in Fig. 1. Note that Figs. 3A and 3B do not show all of the circuit components shown in Fig. 1, but filters 51 to 53, switches 41 to 43, control circuit 70, matching circuits 61 and 62, antenna connection terminal 100, and signal input terminal 110, which are not shown in Fig. 3A, may also be disposed on module substrate 90. Also, in Figs. 3A and 3B, some of the wiring connecting module substrate 90 and the circuit components is omitted.

[0069] The high-frequency module 1A according to the present embodiment differs from the high-frequency module 1 according to the first embodiment only in the position of the semiconductor IC 73. Therefore, in the following, the description of the high-frequency module 1A according to the present embodiment will be omitted for the same arrangement configuration as that of the high-frequency module 1 according to the first embodiment, and the description will focus on the different arrangement configuration.

[0070] 3A and 3B, amplifiers 10 to 14 are arranged on a main surface 90a of module substrate 90. Transformers 21, 22, 31, and 32 are also arranged inside module substrate 90. Note that at least a portion of each of transformers 21, 22, 31, and 32 may be exposed on main surface 90a or 90b of module substrate 90.

[0071] Amplifier 10 is included in semiconductor IC 73 (third semiconductor IC). Amplifiers 11 and 12 are included in semiconductor IC 71 (first semiconductor IC). Amplifiers 13 and 14 are included in semiconductor IC 72 (second semiconductor IC).

[0072] When the module substrate 90 is viewed from above, the semiconductor IC 73 at least partially overlaps with the output coils 212 and 222. This allows the area of ​​the main surface 90a to be further reduced, thereby enabling the high-frequency module 1A to be made smaller.

[0073] Furthermore, when the module substrate 90 is viewed from above, the semiconductor IC 73 may at least partially overlap the transformers 21 and 22. This allows the area of ​​the main surface 90a to be further reduced, thereby enabling the high-frequency module 1A to be made smaller.

[0074] The module substrate 90 may include a ground plane electrode disposed between the transformers 21 and 22 and the semiconductor IC 73. This makes it possible to suppress mutual interference between the transformers 21 and 22 and the amplifier 10.

[0075] [4. Layout of the High-Frequency Module 1B According to the Third Embodiment] The following describes the layout of circuit components constituting the high-frequency module 1B according to the third embodiment. Note that the circuit configuration of the high-frequency module 1B according to the third embodiment is the same as the circuit configuration of the high-frequency module 1 according to the first embodiment, and therefore description of the circuit configuration will be omitted.

[0076] Fig. 4A is a plan view of a high-frequency module 1B according to a third embodiment. Fig. 4B is a cross-sectional view of the high-frequency module 1B according to the third embodiment. Fig. 4A is a plan view (see-through) of a module substrate 90 from the positive side of the z-axis. Fig. 4B is a cross-sectional view taken along line IVB-IVB in Fig. 4A.

[0077] As shown in Fig. 4A, high-frequency module 1B includes a module substrate 90 in addition to the circuit components shown in Fig. 1. Note that Figs. 4A and 4B do not show all of the circuit components shown in Fig. 1, but filters 51 to 53, switches 41 to 43, control circuit 70, matching circuits 61 and 62, antenna connection terminal 100, and signal input terminal 110, which are not shown in Fig. 4A, may also be disposed on module substrate 90. Also, in Figs. 4A and 4B, some of the wiring connecting module substrate 90 and each circuit component is omitted from the illustration.

[0078] The high-frequency module 1B according to the present embodiment differs from the high-frequency module 1 according to the first embodiment only in the position of the semiconductor IC 73. Therefore, in the following, the description of the high-frequency module 1B according to the present embodiment will be omitted for the same arrangement as that of the high-frequency module 1 according to the first embodiment, and the description will focus on the different arrangement.

[0079] 4A and 4B, amplifiers 11 to 14 are arranged on a main surface 90a of module substrate 90, and amplifier 10 is arranged on a main surface 90b of module substrate 90. Transformers 21, 22, 31, and 32 are also arranged inside module substrate 90. Note that at least a portion of each of transformers 21, 22, 31, and 32 may be exposed on main surface 90a or 90b of module substrate 90.

[0080] Amplifier 10 is included in semiconductor IC 73 (third semiconductor IC). Amplifiers 11 and 12 are included in semiconductor IC 71 (first semiconductor IC). Amplifiers 13 and 14 are included in semiconductor IC 72 (second semiconductor IC).

[0081] When the module substrate 90 is viewed from above, the semiconductor IC 73 at least partially overlaps the output coils 212 and 222. This allows the area of ​​the main surface 90b to be reduced, thereby enabling the high-frequency module 1B to be made smaller.

[0082] Furthermore, when the module substrate 90 is viewed from above, the semiconductor IC 73 may at least partially overlap the transformers 21 and 22. This allows the area of ​​the main surface 90b to be further reduced, thereby enabling the high-frequency module 1B to be made smaller.

[0083] The module substrate 90 also includes a ground plane electrode 95 disposed between the transformers 21 and 22 and the semiconductor IC 73. This makes it possible to suppress mutual interference between the transformers 21 and 22.

[0084] The module substrate 90 also includes a ground plane electrode 96 disposed between the transformers 21 and 22 and the semiconductor IC 73. This makes it possible to suppress mutual interference between the transformers 21 and 22 and the amplifier 10.

[0085] The semiconductor IC 73 is disposed on the main surface 90b, but does not need to overlap with the transformers 21 and 22. This allows the amplifier 10 and the amplifiers 11 to 14 to be disposed on both surfaces of the module substrate 90, thereby enabling the high-frequency module 1B to be miniaturized.

[0086] [5. Layout of the High-Frequency Module 1C According to the Fourth Embodiment] The following describes the layout of circuit components constituting the high-frequency module 1C according to the fourth embodiment. Note that the circuit configuration of the high-frequency module 1C according to the fourth embodiment is the same as the circuit configuration of the high-frequency module 1 according to the first embodiment, and therefore description of the circuit configuration will be omitted.

[0087] Fig. 5 is a plan view of a high-frequency module 1C according to Example 4. Fig. 5 is a plan view (see-through) of a module substrate 90 from the positive side of the z axis.

[0088] As shown in Fig. 5, the high-frequency module 1C includes a module substrate 90 in addition to the circuit components shown in Fig. 1. Note that Fig. 5 does not show all of the circuit components shown in Fig. 1, but the switch 41, antenna connection terminal 100, and signal input terminal 110, which are not shown in Fig. 5, may also be disposed on the module substrate 90. Also, Fig. 5 omits some of the wiring connecting the module substrate 90 and the circuit components.

[0089] The high-frequency module 1C according to this embodiment has the same arrangement of semiconductor ICs 71, 72 and transformers 21 and 22 as the high-frequency module 1 according to Example 1, but has a different arrangement of other circuit components. Therefore, in the following, a description of the same arrangement as the high-frequency module 1 according to Example 1 will be omitted, and the different arrangement will be mainly described.

[0090] 5, amplifiers 10 to 14, filters 51, 52, and 53, switches 42 and 43, a control circuit 70, and matching circuits 61 and 62 are arranged on a main surface 90a of module substrate 90. Transformers 21, 22, 31, and 32 are also arranged inside module substrate 90. Note that at least a portion of each of transformers 21, 22, 31, and 32 may be exposed on main surface 90a or 90b of module substrate 90.

[0091] The amplifier 10, the control circuit 70, and the switch 42 are included in a semiconductor IC 74 (a third semiconductor IC). The amplifiers 11 and 12 are included in a semiconductor IC 71 (a first semiconductor IC). The amplifiers 13 and 14 are included in a semiconductor IC 72 (a second semiconductor IC). The semiconductor IC 74 may also include the switch 41. In this way, the amplifier 10, the control circuit 70, and the switch 42 are integrated into the semiconductor IC 74, thereby enabling the high-frequency module 1C to be miniaturized.

[0092] When the module substrate 90 is viewed in a plane, the output side coil 212 and the output side coil 222 at least partially overlap, and when the module substrate 90 is viewed in cross section, the output side coil 212 is positioned closer to the main surface 90a of the module substrate 90 than the output side coil 222.

[0093] This allows the output coil 212 and the output coil 222 to be arranged overlapping in the normal direction of the module substrate 90, thereby reducing the area of ​​the high-frequency module 1C. Furthermore, the length of the connection wiring between the output coil 212, which transmits signals at higher frequencies, and the amplifiers 11 and 12 can be shortened, effectively suppressing degradation of the signal transmission characteristics in the first signal path. This provides a multi-band high-frequency module 1C in which degradation of the transmission characteristics is suppressed.

[0094] When module substrate 90 is viewed in a plane, transformer 21 and transformer 22 at least partially overlap, and when module substrate 90 is viewed in cross section, transformer 21 may be positioned closer to main surface 90a of module substrate 90 than transformer 22.

[0095] According to the above configuration, the transformers 21 and 22 are arranged overlapping in the normal direction of the module substrate 90, thereby reducing the area of ​​the high-frequency module 1C. Furthermore, the length of the connection wiring between the output coil 212, which transmits signals on the higher frequency side, and the amplifiers 11 and 12 can be shortened, effectively suppressing degradation of the signal transmission characteristics in the first signal path. This makes it possible to provide a multi-band high-frequency module 1C in which degradation of the transmission characteristics is suppressed.

[0096] When module substrate 90 is viewed from above, transformers 21 and 22 are disposed between semiconductor IC 71 and semiconductor IC 72 .

[0097] This allows the distance between the output coil 212 and the amplifiers 11 and 12, and the distance between the output coil 222 and the amplifiers 13 and 14 to be shortened in a balanced manner, thereby suppressing deterioration of the signal transmission characteristics in the first signal path and the second signal path.

[0098] Furthermore, in this embodiment, by arranging the amplifiers 10 to 14 on the main surface 90a of the module substrate 90, the transformers 21 and 22 connected to the amplifiers 10 to 14 can be arranged on the main surface 90a side of the module substrate 90, thereby making it possible to make the module substrate 90 thinner.

[0099] In addition, in the semiconductor IC 74, the amplifier 10, the control circuit 70, and the switch 42 are arranged in order of proximity to the transformers 21 and 22 in the plan view.

[0100] This allows the distance between amplifier 10 and transformers 21 and 22 to be shortened, thereby reducing transmission loss in the wiring connecting amplifier 10 and transformers 21 and 22. Furthermore, by sandwiching control circuit 70 between amplifier 10 and switch 42, it is possible to smooth the flow of control signals to each semiconductor IC and ensure isolation between amplifier 10 and switch 42.

[0101] Furthermore, in the above plan view, transformer 31 and matching circuit 61 are arranged, in order from semiconductor IC 71, between semiconductor IC 71 and semiconductor IC 74, and transformer 32 and matching circuit 62 are arranged, in order from semiconductor IC 72, between semiconductor IC 72 and semiconductor IC 74. This makes it possible to shorten the signal paths from amplifiers 11 and 12 to switch 42 and the signal paths from amplifiers 13 and 14 to switch 42, thereby reducing signal transmission loss.

[0102] In the high-frequency module 1C, the semiconductor IC 74 may be disposed on the main surface 90b. In this case, the semiconductor IC 74 and the semiconductor ICs 71 and 72 are disposed on both sides of the module substrate 90, which allows the high-frequency module 1C to be miniaturized.

[0103] [6. Layout of High-Frequency Module 1D According to Example 5] The following describes the layout of circuit components constituting the high-frequency module 1D according to Example 5. Note that the circuit configuration of the high-frequency module 1D according to Example 5 is the same as the circuit configuration of the high-frequency module 1 according to Example 1, and therefore description of the circuit configuration will be omitted.

[0104] Fig. 6A is a plan view of a high-frequency module 1D in accordance with a fifth embodiment. Fig. 6B is a cross-sectional view of the high-frequency module 1D in accordance with the fifth embodiment. Fig. 6A is a plan view (see-through) of a module substrate 90 from the positive side of the z-axis. Fig. 6B is a cross-sectional view taken along line VIB-VIB in Fig. 6A.

[0105] As shown in Figures 6A and 6B, the high-frequency module 1D includes a module substrate 90 in addition to the circuit components shown in Figure 1. Note that Figure 6A does not show all of the circuit components shown in Figure 1, but the switch 41, antenna connection terminal 100, and signal input terminal 110, which are not shown in Figure 6A, may also be disposed on the module substrate 90. Also, in Figures 6A and 6B, the illustration of the module substrate 90 and the wiring connecting the circuit components is partially omitted.

[0106] The high-frequency module 1D according to this embodiment differs from the high-frequency module 1C according to Example 4 only in the arrangement of the semiconductor ICs 74. Therefore, in the following, the description of the high-frequency module 1D according to this embodiment will be omitted for the same arrangement as that of the high-frequency module 1C according to Example 4, and the description will focus on the different arrangement.

[0107] When the module substrate 90 is viewed from above, the semiconductor IC 74 at least partially overlaps with the output coils 212 and 222. This allows the area of ​​the main surface 90a to be further reduced, thereby enabling the high-frequency module 1D to be made smaller.

[0108] Furthermore, when the module substrate 90 is viewed from above, the semiconductor IC 74 may at least partially overlap the transformers 21 and 22. This allows the area of ​​the main surface 90a to be further reduced, thereby enabling the high-frequency module 1D to be made smaller.

[0109] The module substrate 90 may include a ground plane electrode disposed between the transformers 21 and 22 and the semiconductor IC 74. This makes it possible to suppress mutual interference between the transformers 21 and 22 and the amplifier 10.

[0110] In addition, in the semiconductor IC 74, the amplifier 10, the control circuit 70, and the switch 42 are arranged in order of proximity to the transformers 21 and 22 in the plan view.

[0111] This allows the distance between amplifier 10 and transformers 21 and 22 to be shortened, thereby reducing transmission loss in the wiring connecting amplifier 10 and transformers 21 and 22. Furthermore, by sandwiching control circuit 70 between amplifier 10 and switch 42, it is possible to smooth the flow of control signals to each semiconductor IC and ensure isolation between amplifier 10 and switch 42.

[0112] In the high-frequency module 1D, the semiconductor IC 74 is disposed on the main surface 90b, and in the above-mentioned plan view, the semiconductor IC 74 may at least partially overlap with the transformers 21 and 22. This allows the area of ​​the main surface 90a to be further reduced, thereby enabling the high-frequency module 1D to be made smaller.

[0113] 7 Circuit Configuration of High-Frequency Module 1E According to Sixth Embodiment The circuit configuration of a high-frequency module 1E according to a sixth embodiment will be described with reference to FIG. 7A. FIG. 7A is a circuit configuration diagram of the high-frequency module 1E according to the sixth embodiment. As shown in the figure, the high-frequency module 1E according to the sixth embodiment includes amplifiers 10a, 10b, 11, 12, 13, and 14, transformers 21, 22, 31, and 32, filters 51, 52, and 53, switches 42 and 43, a control circuit 70, matching circuits 61 and 62, an antenna connection terminal 100, and signal input terminals 111 and 112.

[0114] The high-frequency module 1E according to the present embodiment differs from the high-frequency module 1 according to the first embodiment in that amplifiers 10a and 10b are provided instead of the amplifier 10 and the switch 41. Therefore, in the following, a description of the circuit configuration of the high-frequency module 1E according to the present embodiment that is the same as that of the high-frequency module 1 according to the first embodiment will be omitted, and the description will focus on the different circuit configurations.

[0115] Amplifier 10a is an example of a first pre-stage amplifier and is a power amplifier that amplifies a high-frequency signal input from signal input terminal 111. Amplifier 10b is an example of a second pre-stage amplifier and is a power amplifier that amplifies a high-frequency signal input from signal input terminal 112.

[0116] Each of the amplifiers 10a, 10b, and 11 to 14 includes an amplifying transistor. The amplifiers 10a and 10b are made of, for example, CMOS and fabricated by an SOI process. The amplifiers 11 to 14 are made of, for example, at least one of GaAs, SiGe, and GaN.

[0117] The transformer 21 is an example of a first transformer and an example of a first matching circuit, and has an input coil 211 and an output coil 212 that are electromagnetically coupled to each other. The transformer 21 is connected between the output end of the amplifier 10a and the input ends of the amplifiers 11 and 12. The input coil 211 is an example of a third inductor, and the output coil 212 is an example of a first inductor.

[0118] The transformer 22 is an example of a second transformer and an example of a second matching circuit, and has an input coil 221 and an output coil 222 that are electromagnetically coupled to each other. The transformer 22 is connected between the output end of the amplifier 10b and the input ends of the amplifiers 13 and 14. The input coil 221 is an example of a fourth inductor, and the output coil 222 is an example of a second inductor.

[0119] One end of the output coil 212 is connected to the input terminal of the amplifier 11, and the other end of the output coil 212 is connected to the input terminal of the amplifier 12. One end of the input coil 211 is connected to the output terminal of the amplifier 10a, and one end of the input coil 221 is connected to the output terminal of the amplifier 10b. The other ends of the input coil 211 and the input coil 221 are connected to ground.

[0120] In the high-frequency module according to the modification of the sixth embodiment, the first rear-stage amplifier may not include amplifiers 11 and 12 arranged in parallel and may instead be configured with a single first amplifier. Furthermore, the second rear-stage amplifier may not include amplifiers 13 and 14 arranged in parallel and may instead be configured with a single second amplifier. That is, in the high-frequency module according to this modification, transformers 21, 22, 31, and 32 are not provided, the output terminal of amplifier 10a is connected to the input terminal of the first amplifier, the output terminal of amplifier 10b is connected to the input terminal of the second amplifier, the output terminal of the first amplifier is connected to common terminal 42a, and the output terminal of the second amplifier is connected to common terminal 42b. Furthermore, a first inductor is connected between ground and a path connecting the output terminal of amplifier 10a and the input terminal of the first amplifier, and a second inductor is connected between ground and a path connecting the output terminal of amplifier 10b and the input terminal of the second amplifier.

[0121] Furthermore, the matching circuits 61 and 62, the switches 42 and 43, and the filter 52 do not necessarily have to be included in the high-frequency module 1E.

[0122] 8. Arrangement of High-Frequency Module 1E According to Sixth Embodiment The arrangement of circuit components constituting a high-frequency module 1E according to a sixth embodiment will be described.

[0123] Fig. 7B is a plan view of a high-frequency module 1E according to Example 6. Fig. 7B is a plan view (see-through) of the module substrate 90 from the positive side of the z axis.

[0124] As shown in Fig. 7B, the high-frequency module 1E includes a module substrate 90 in addition to the circuit components shown in Fig. 7A. Note that Fig. 7B does not show all of the circuit components shown in Fig. 7A, but antenna connection terminal 100 and signal input terminal 110, which are not shown in Fig. 7B, may also be disposed on module substrate 90. Also, Fig. 7B omits the illustration of some of the wiring connecting module substrate 90 and each circuit component.

[0125] The high-frequency module 1E according to this embodiment differs from the high-frequency module 1C according to Example 4 in the configuration of the semiconductor IC 75. Therefore, in the following, the description of the high-frequency module 1E according to this embodiment will be omitted for the same arrangement configuration as that of the high-frequency module 1C according to Example 4, and the description will focus on the different arrangement configuration.

[0126] 7B , amplifiers 10a, 10b, 11-14, filters 51, 52, and 53, switches 42 and 43, a control circuit 70, and matching circuits 61 and 62 are arranged on a main surface 90a of module substrate 90. Transformers 21, 22, 31, and 32 are also arranged inside module substrate 90. Note that at least a portion of each of transformers 21, 22, 31, and 32 may be exposed on main surface 90a or 90b of module substrate 90.

[0127] The amplifiers 10a and 10b, the control circuit 70, and the switch 42 are included in a semiconductor IC 75 (a third semiconductor IC). The amplifiers 11 and 12 are included in a semiconductor IC 71 (a first semiconductor IC). The amplifiers 13 and 14 are included in a semiconductor IC 72 (a second semiconductor IC). Because the amplifiers 10a and 10b, the control circuit 70, and the switch 42 are integrated into the semiconductor IC 75, the high-frequency module 1E can be made smaller.

[0128] When the module substrate 90 is viewed in a plane, the output side coil 212 and the output side coil 222 at least partially overlap, and when the module substrate 90 is viewed in cross section, the output side coil 212 is positioned closer to the main surface 90a of the module substrate 90 than the output side coil 222.

[0129] This allows the output coil 212 and the output coil 222 to be arranged overlapping in the normal direction of the module substrate 90, thereby reducing the area of ​​the high-frequency module 1E. Furthermore, the length of the connection wiring between the output coil 212, which transmits signals at higher frequencies, and the amplifiers 11 and 12 can be shortened, effectively suppressing degradation of the signal transmission characteristics in the first signal path. This provides a multi-band high-frequency module 1E in which degradation of the transmission characteristics is suppressed.

[0130] When module substrate 90 is viewed in a plane, transformer 21 and transformer 22 at least partially overlap, and when module substrate 90 is viewed in cross section, transformer 21 may be positioned closer to main surface 90a of module substrate 90 than transformer 22.

[0131] According to the above configuration, the transformers 21 and 22 are arranged overlapping in the normal direction of the module substrate 90, thereby reducing the area of ​​the high-frequency module 1E. Furthermore, the length of the connection wiring between the output coil 212, which transmits signals at higher frequencies, and the amplifiers 11 and 12 can be shortened, effectively suppressing degradation of the signal transmission characteristics in the first signal path. This makes it possible to provide a multi-band high-frequency module 1E in which degradation of the transmission characteristics is suppressed.

[0132] When module substrate 90 is viewed from above, transformers 21 and 22 are disposed between semiconductor IC 71 and semiconductor IC 72 .

[0133] This allows the distance between the output coil 212 and the amplifiers 11 and 12, and the distance between the output coil 222 and the amplifiers 13 and 14 to be shortened in a balanced manner, thereby suppressing deterioration of the signal transmission characteristics in the first signal path and the second signal path.

[0134] Furthermore, in this embodiment, by arranging the amplifiers 10a, 10b, and 11 to 14 on the main surface 90a of the module substrate 90, the transformers 21 and 22 connected to the amplifiers 10a, 10b, and 11 to 14 can be arranged on the main surface 90a side of the module substrate 90, thereby making it possible to make the module substrate 90 thinner.

[0135] In addition, in the semiconductor IC 75, the amplifiers 10a and 10b, the control circuit 70, and the switch 42 are arranged in order of proximity to the transformers 21 and 22 in the plan view.

[0136] This allows the distance between amplifiers 10a and 10b and transformers 21 and 22 to be shortened, thereby reducing transmission loss in the wiring connecting amplifier 10a and transformer 21 and the wiring connecting amplifier 10b and transformer 22. Furthermore, by sandwiching control circuit 70 between amplifiers 10a and 10b and switch 42, it is possible to smooth the flow of control signals to each semiconductor IC and ensure isolation between amplifiers 10a and 10b and switch 42.

[0137] Furthermore, in the semiconductor IC 75, the amplifier 10b may be arranged between the amplifier 10a and the amplifiers 11 and 12, and the amplifier 10a may be arranged between the amplifier 10b and the amplifiers 13 and 14 in the plan view.

[0138] This allows a sufficient distance between amplifier 10a and amplifiers 11 and 12, thereby preventing interference and oscillation between amplifier 10a and amplifiers 11 and 12. Furthermore, a sufficient distance between amplifier 10b and amplifiers 13 and 14 allows a sufficient distance between amplifier 10b and amplifiers 13 and 14, thereby preventing interference and oscillation between amplifier 10b and amplifiers 13 and 14.

[0139] When the module substrate 90 is viewed from above, the semiconductor IC 75 may at least partially overlap the output coils 212 and 222. This allows the area of ​​the main surface 90a to be further reduced, thereby enabling the high-frequency module 1E to be made smaller.

[0140] Furthermore, when the module substrate 90 is viewed from above, the semiconductor IC 75 may at least partially overlap with the transformers 21 and 22. This allows the area of ​​the main surface 90a to be further reduced, thereby enabling the high-frequency module 1E to be made smaller.

[0141] In the high-frequency module 1E, the semiconductor IC 75 may be disposed on the main surface 90b. In this case, the amplifiers 10a and 10b and the amplifiers 11 to 14 are disposed on both sides of the module substrate 90, thereby making it possible to reduce the size of the high-frequency module 1E.

[0142] Furthermore, in the high-frequency module 1E, the semiconductor IC 75 may be disposed on the main surface 90b, and in the above-mentioned plan view, the semiconductor IC 75 may at least partially overlap with the output coils 212 and 222. This allows the area of ​​the main surface 90b to be further reduced, thereby enabling the high-frequency module 1E to be made smaller.

[0143] The module substrate 90 may include a ground plane electrode disposed between the transformer 21 and the transformer 22. This makes it possible to suppress mutual interference between the transformer 21 and the transformer 22.

[0144] In the high-frequency module according to the modified example of Example 6, when the module substrate 90 is viewed in a plan view, the first inductor and the second inductor at least partially overlap, and the first inductor is positioned closer to the main surface 90a of the module substrate 90 than the second inductor.

[0145] This arrangement allows the first inductor and the second inductor to be arranged overlapping in the normal direction of the module substrate 90, thereby reducing the area of ​​the high-frequency module. Furthermore, the parasitic inductance components added to the first inductor and the second inductor have a greater effect on the transmission characteristics as the frequency of the high-frequency signal transmitted through the high-frequency module increases. In contrast, since the first inductor is arranged closer to the main surface 90a than the second inductor, the distance between the first amplifier arranged on the main surface 90a and the first inductor can be made shorter than the distance between the second amplifier arranged on the main surface 90a and the second inductor. This shortens the wiring connecting the first inductor and the first amplifier, which transmits signals at higher frequencies, effectively suppressing degradation of the signal transmission characteristics in the first signal path. This allows for a multi-band high-frequency module with suppressed degradation of the transmission characteristics.

[0146] 9. Circuit Configuration of High-Frequency Module 1F According to Seventh Embodiment The circuit configuration of a high-frequency module 1F according to a seventh embodiment will be described with reference to FIG. 8A. FIG. 8A is a circuit configuration diagram of the high-frequency module 1F according to the seventh embodiment. As shown in the figure, the high-frequency module 1F according to the seventh embodiment includes amplifiers 10, 15, and 16, transformers 21, 22, 31, and 32, filters 51, 52, and 53, switches 41, 42, and 43, a control circuit 70, matching circuits 61 and 62, an antenna connection terminal 100, and a signal input terminal 110.

[0147] The high-frequency module 1F according to the present embodiment differs from the high-frequency module 1 according to the first embodiment in that amplifiers 15 and 16 are provided instead of the amplifiers 11 to 14. Therefore, in the following, a description of the circuit configuration of the high-frequency module 1F according to the present embodiment that is the same as that of the high-frequency module 1 according to the first embodiment will be omitted, and the description will focus on the different circuit configurations.

[0148] Amplifier 15 is one of the post-stage amplifiers and is a power amplifier capable of amplifying the high-frequency signal output from one end of the secondary coil of transformer 21 and the high-frequency signal output from one end of the secondary coil of transformer 22. Amplifier 16 is the other of the post-stage amplifiers and is a power amplifier capable of amplifying the high-frequency signal output from the other end of the secondary coil of transformer 21 and the high-frequency signal output from the other end of the secondary coil of transformer 22. Amplifiers 15 and 16 constitute post-stage amplifiers.

[0149] Each of the amplifiers 15 and 16 includes an amplifying transistor. The amplifier 10 is configured using, for example, CMOS and is manufactured using an SOI process. The amplifiers 15 and 16 are configured using, for example, at least one of GaAs, SiGe, and GaN.

[0150] The transformer 21 is an example of a first transformer and an example of a first matching circuit, and has an input coil 211 and an output coil 212 that are electromagnetically coupled to each other. The transformer 21 is connected between the output end of the amplifier 10 and the input ends of the amplifiers 15 and 16 (post-stage amplifiers). The input coil 211 is an example of a third inductor, and the output coil 212 is an example of a first inductor.

[0151] The transformer 22 is an example of a second transformer and an example of a second matching circuit, and has an input coil 221 and an output coil 222 that are electromagnetically coupled to each other. The transformer 22 is connected between the output end of the amplifier 10 and the input ends of the amplifiers 15 and 16 (post-stage amplifiers). The input coil 221 is an example of a fourth inductor, and the output coil 222 is an example of a second inductor.

[0152] The transformer 31 is an example of an output matching circuit, and has an input coil 311 and an output coil 312 that are electromagnetically coupled to each other. The transformer 31 is connected between the output ends of the amplifiers 15 and 16 and the filters 51 and 52. Specifically, one end of the input coil 311 is connected to the output end of the amplifier 15, the other end of the input coil 311 is connected to the output end of the amplifier 16, one end of the output coil 312 is connected to the matching circuit 61, and the other end of the output coil 312 is connected to ground.

[0153] The transformer 32 is an example of an output matching circuit, and has an input coil 321 and an output coil 322 that are electromagnetically coupled to each other. The transformer 32 is connected between the output ends of the amplifiers 15 and 16 and the filter 53. Specifically, one end of the input coil 321 is connected to the output end of the amplifier 15, the other end of the input coil 321 is connected to the output end of the amplifier 16, one end of the output coil 322 is connected to the matching circuit 62, and the other end of the output coil 322 is connected to ground.

[0154] The switch 41 is an example of a first switch and has a common terminal 41a (first common terminal), a selection terminal 41b (first selection terminal), and a selection terminal 41c (second selection terminal). The switch 41 switches between the connection between the common terminal 41a and the selection terminal 41b and the connection between the common terminal 41a and the selection terminal 41c. The common terminal 41a is connected to the output terminal of the amplifier 10, the selection terminal 41b is connected to one end of the input coil 211, and the selection terminal 41c is connected to one end of the input coil 221.

[0155] The switch 42 is an example of a second switch and has a common terminal 42a (second common terminal), a common terminal 42b (second common terminal), a selection terminal 42c (third selection terminal), a selection terminal 42d (third selection terminal), and a selection terminal 42e (fourth selection terminal). The switch 42 switches between the connection between the common terminal 42a and the selection terminal 42c and the connection between the common terminal 42a and the selection terminal 42d, and also switches between the connection and disconnection between the common terminal 42b and the selection terminal 42e. The common terminal 42a is connected to one end of the output coil 312 via a matching circuit 61, the common terminal 42b is connected to one end of the output coil 322 via a matching circuit 62, the selection terminal 42c is connected to the filter 51, the selection terminal 42d is connected to the filter 52, and the selection terminal 42e is connected to the filter 53.

[0156] According to the above-described connection configuration, the switch 42 switches between connection and disconnection between the amplifiers 15 and 16 and the filter 51 (or filter 52), and between connection and disconnection between the amplifiers 15 and 16 and the filter 53. When the common terminal 41a and the selection terminal 41b of the switches 41 and 42 are connected, the common terminal 42a is connected to the selection terminal 42c or 42d, and when the common terminal 41a and the selection terminal 41c are connected, the common terminal 42b is connected to the selection terminal 42e. In other words, the signal path connecting the transformer 21, the amplifiers 15 and 16, the transformer 31, the matching circuit 61, the switch 42, and the filter 51 or 52 is a first signal path that transmits signals in the high-band group. Furthermore, the signal path connecting the transformer 22, the amplifiers 15 and 16, the transformer 32, the matching circuit 62, the switch 42, and the filter 53 is a second signal path that transmits signals in the middle-band group.

[0157] One end of the output coil 212 is connected to the input terminal of the amplifier 15, and the other end of the output coil 212 is connected to the input terminal of the amplifier 16. One end of the output coil 222 is connected to the input terminal of the amplifier 15, and the other end of the output coil 222 is connected to the input terminal of the amplifier 16. The other end of the input coil 211 and the other end of the input coil 221 are connected to ground.

[0158] According to the above circuit configuration, it is possible to provide a multi-band radio frequency module 1F capable of transmitting high band group signals and middle band group signals.

[0159] [10. Arrangement of High-Frequency Module 1F According to Seventh Embodiment] The arrangement of circuit components constituting the high-frequency module 1F according to the seventh embodiment will be described.

[0160] Fig. 8B is a plan view of a high-frequency module 1F in accordance with a seventh embodiment. Fig. 8C is a cross-sectional view of the high-frequency module 1F in accordance with the seventh embodiment. Fig. 8B is a plan view (see-through) of the module substrate 90 from the positive side of the z-axis. Fig. 8C is a cross-sectional view taken along line VIIIC-VIIIC in Fig. 8B.

[0161] As shown in Fig. 8B , the high-frequency module 1F includes a module substrate 90 in addition to the circuit components shown in Fig. 8A . Note that Fig. 8B does not show all of the circuit components shown in Fig. 8A , but filters 51, 52, and 53, switch 43, matching circuits 61 and 62, antenna connection terminal 100, and signal input terminal 110, which are not shown in Fig. 8B , may also be disposed on the module substrate 90. Also, in Figs. 8B and 8C , some of the wiring connecting the module substrate 90 and the circuit components is omitted.

[0162] The module substrate 90 has opposing main surfaces 90a and 90b, and is a substrate on which circuit components constituting the high-frequency module 1F are mounted. As the module substrate 90, for example, an LTCC substrate having a laminated structure of multiple dielectric layers, an HTCC substrate, a component-embedded substrate, a substrate having an RDL, or a printed circuit board may be used.

[0163] 8B and 8C , amplifiers 10, 15, and 16, switches 41 and 42, and control circuit 70 are arranged on main surface 90a of module substrate 90. Transformers 21, 22, 31, and 32 are also arranged inside module substrate 90. Note that at least a portion of each of transformers 21, 22, 31, and 32 may be exposed on main surface 90a or 90b of module substrate 90.

[0164] Amplifier 10 is included in semiconductor IC 76 (first semiconductor IC). Amplifiers 15 and 16 are included in semiconductor IC 77 (second semiconductor IC). Semiconductor IC 76 is configured using, for example, CMOS, and specifically, is fabricated using an SOI process. Semiconductor IC 77 is configured, for example, from at least one of GaAs, SiGe, and GaN.

[0165] The input coil 211 and the output coil 212 of the transformer 21 are each formed as planar coils on the module substrate 90. The input coil 221 and the output coil 222 of the transformer 22 are each formed as planar coils on the module substrate 90. The input coil 311 and the output coil 312 of the transformer 31 are each formed as planar coils on the module substrate 90. The input coil 321 and the output coil 322 of the transformer 32 are each formed as planar coils on the module substrate 90. The region where the input coil 211 is formed and the region where the output coil 212 is formed are arranged so as to at least partially overlap when the module substrate 90 is viewed from above. The region where the input coil 221 is formed and the region where the output coil 222 is formed are arranged so as to at least partially overlap when the module substrate 90 is viewed from above. The region where the input coil 311 is formed and the region where the output coil 312 is formed are arranged so as to at least partially overlap when the module substrate 90 is viewed from above. The region where the input coil 321 is formed and the region where the output coil 322 is formed are arranged so as to at least partially overlap each other when the module substrate 90 is viewed from above.

[0166] Here, when the module substrate 90 is viewed in a plane, the output side coil 212 and the output side coil 222 at least partially overlap, and when the module substrate 90 is viewed in cross section, the output side coil 212 is positioned closer to the main surface 90a of the module substrate 90 than the output side coil 222.

[0167] This allows the output coil 212 and the output coil 222 to be arranged overlapping in the normal direction of the module substrate 90, thereby reducing the area of ​​the high-frequency module 1F. Furthermore, the length of the connection wiring between the output coil 212, which transmits signals on the higher frequency side, and the amplifiers 15 and 16 can be shortened, effectively suppressing deterioration of the signal transmission characteristics in the first signal path. Therefore, a multi-band high-frequency module 1F in which deterioration of the transmission characteristics is suppressed can be provided.

[0168] As shown in FIG. 8B , when the module substrate 90 is viewed in plan, the transformers 21 and 22 may at least partially overlap, and the transformer 21 may be disposed closer to the main surface 90 a of the module substrate 90 than the transformer 22.

[0169] According to the above configuration, the transformers 21 and 22 are arranged overlapping in the normal direction of the module substrate 90, thereby reducing the area of ​​the high-frequency module 1F. Furthermore, the length of the connection wiring between the output coil 212, which transmits signals on the higher frequency side, and the amplifiers 15 and 16 can be shortened, effectively suppressing degradation of the signal transmission characteristics in the first signal path. This makes it possible to provide a multi-band high-frequency module 1F in which degradation of the transmission characteristics is suppressed.

[0170] Furthermore, when the module substrate 90 is viewed from above, the transformers 31 and 32 at least partially overlap, and the transformer 31 is disposed closer to the main surface 90 a of the module substrate 90 than the transformer 32 .

[0171] This allows the transformers 31 and 32 to be arranged overlapping in the normal direction of the module substrate 90, thereby reducing the area of ​​the high-frequency module 1F. Furthermore, the length of the connection wiring between the transformer 31, which transmits signals on the higher frequency side, and the amplifiers 15 and 16 can be shortened, effectively suppressing degradation of the signal transmission characteristics in the first signal path. Therefore, a multi-band high-frequency module 1F with suppressed degradation of the transmission characteristics can be provided.

[0172] Furthermore, in this embodiment, by arranging the amplifiers 10, 15, and 16 on the main surface 90a of the module substrate 90, the transformers 21 and 22 connected to the amplifiers 10, 15, and 16 can be arranged on the main surface 90a side of the module substrate 90, thereby making it possible to make the module substrate 90 thinner.

[0173] In addition, in the semiconductor IC 76, the switch 41, the amplifier 10, the control circuit 70, and the switch 42 are arranged in order of proximity to the transformers 21 and 22 in the plan view.

[0174] This allows the distance between the transformers 21 and 22 and the switch 41 to be shortened, and also the distance between the switch 41 and the amplifier 10 to be shortened, thereby reducing transmission loss in the wiring connecting the amplifier 10 and the transformers 21 and 22. Furthermore, by sandwiching the control circuit 70 between the amplifier 10 and the switch 42, it is possible to smooth the flow of control signals to each semiconductor IC and ensure isolation between the amplifier 10 and the switch 42.

[0175] [11 Layout of High-Frequency Module 1G According to Example 8] A description will be given of the layout of circuit components constituting the high-frequency module 1G according to Example 8. Note that the circuit configuration of the high-frequency module 1G according to Example 8 is the same as the circuit configuration of the high-frequency module 1F according to Example 7, and therefore description of the circuit configuration will be omitted.

[0176] Fig. 9A is a plan view of a high-frequency module 1G in accordance with an eighth embodiment. Fig. 9B is a cross-sectional view of the high-frequency module 1G in accordance with the eighth embodiment. Fig. 9A is a plan view (see-through) of a module substrate 90 from the positive side of the z-axis. Fig. 9B is a cross-sectional view taken along line IXB-IXB in Fig. 9A.

[0177] As shown in Fig. 9A , the high-frequency module 1G includes a module substrate 90 in addition to the circuit components shown in Fig. 8A . Note that Figs. 9A and 9B do not show all of the circuit components shown in Fig. 8A , but filters 51, 52, and 53, switch 43, matching circuits 61 and 62, antenna connection terminal 100, and signal input terminal 110, which are not shown in Fig. 9A , may also be disposed on module substrate 90. Also, in Figs. 9A and 9B , some of the wiring connecting module substrate 90 and each circuit component is omitted.

[0178] The high-frequency module 1G according to this embodiment differs from the high-frequency module 1F according to Example 7 only in the position of the semiconductor IC 77. Therefore, in the following, the description of the high-frequency module 1G according to this embodiment will be omitted for the same arrangement configuration as that of the high-frequency module 1F according to Example 7, and the description will focus on the different arrangement configuration.

[0179] 9A and 9B , amplifiers 15 and 16 are arranged on a main surface 90a of module substrate 90, and amplifier 10, switches 41 and 42, and control circuit 70 are arranged on a main surface 90b of module substrate 90. Transformers 21, 22, 31, and 32 are also arranged inside module substrate 90. Note that at least a portion of each of transformers 21, 22, 31, and 32 may be exposed on main surface 90a or 90b of module substrate 90.

[0180] Amplifier 10 is included in semiconductor IC 76 (first semiconductor IC). Amplifiers 15 and 16 are included in semiconductor IC 77 (second semiconductor IC). Semiconductor IC 76 is configured using, for example, CMOS, and specifically, is fabricated using an SOI process. Semiconductor IC 77 is configured, for example, from at least one of GaAs, SiGe, and GaN.

[0181] When the module substrate 90 is viewed from above, the semiconductor IC 76 at least partially overlaps the output coils 212 and 222. This allows the area of ​​the main surface 90b to be further reduced, thereby enabling the high-frequency module 1G to be made smaller.

[0182] Furthermore, the module substrate 90 may be joined to the semiconductor IC 77 and may include via conductors 97 that pass through the module substrate 90 and the semiconductor IC 76 .

[0183] This allows heat generated by the amplifiers 15 and 16 to be dissipated to the main surface 90 b of the module substrate 90 through the via conductors 97 .

[0184] The semiconductor IC 76 is disposed on the main surface 90b, but does not need to overlap with the transformers 21 and 22. This allows the amplifier 10 and the amplifiers 15 and 16 to be disposed separately on both surfaces of the module substrate 90, thereby enabling the high-frequency module 1G to be miniaturized.

[0185] The module substrate 90 may also include a ground plane electrode disposed between the transformers 21 and 22 and the semiconductor IC 76. This makes it possible to suppress mutual interference between the transformers 21 and 22 and the amplifier 10. The module substrate 90 may also include a ground plane electrode disposed between the transformers 31 and 32 and the semiconductor IC 76. This makes it possible to suppress mutual interference between the transformers 31 and 32 and the amplifier 10.

[0186] [12 Circuit Configuration of High-Frequency Module 1H According to Example 9] The circuit configuration of a high-frequency module 1H according to Example 9 will be described with reference to Fig. 10A. Fig. 10A is a circuit configuration diagram of the high-frequency module 1H according to Example 9. As shown in Fig. 10A, the high-frequency module 1H according to this example includes amplifiers 10, 11, 12, 13, and 14, transformers 23, 24, 31, and 32, filters 51, 52, and 53, switches 42 and 43, a control circuit 70, matching circuits 61 and 62, an antenna connection terminal 100, and a signal input terminal 111.

[0187] The high-frequency module 1H according to the present embodiment differs from the high-frequency module 1 according to the first embodiment in that transformers 23 and 24 are provided instead of the transformers 21 and 22 and the switch 41. Therefore, in the following, a description of the circuit configuration of the high-frequency module 1H according to the present embodiment that is the same as that of the high-frequency module 1 according to the first embodiment will be omitted, and the description will focus on the different circuit configurations.

[0188] The amplifier 10 is an example of a pre-stage amplifier, and is a power amplifier that amplifies a high-frequency signal input from a signal input terminal 110 .

[0189] Amplifier 11 is an example of a first amplifying element and is a power amplifier that amplifies a high-frequency signal output from one end of the secondary coil of transformer 23. Amplifier 12 is an example of a second amplifying element and is a power amplifier that amplifies a high-frequency signal output from the other end of the secondary coil of transformer 23. Amplifiers 11 and 12 constitute a first post-stage amplifier.

[0190] Amplifier 13 is an example of a third amplifying element and is a power amplifier that amplifies the high-frequency signal output from one end of the secondary coil of transformer 24. Amplifier 14 is an example of a fourth amplifying element and is a power amplifier that amplifies the high-frequency signal output from the other end of the secondary coil of transformer 24. Amplifiers 13 and 14 constitute a second post-stage amplifier.

[0191] The transformer 23 is an example of a first transformer and an example of a first matching circuit, and has an input coil 201 and an output coil 232 that are electromagnetically coupled to each other. The transformer 23 is connected between the output end of the amplifier 10 and the input ends of the amplifiers 11 and 12 (first subsequent-stage amplifiers). A portion of the input coil 201 is an example of a third inductor, and the output coil 232 is an example of a first inductor.

[0192] Transformer 24 is an example of a second transformer and an example of a second matching circuit, and has an input coil 201 and an output coil 242 that are electromagnetically coupled to each other. Transformer 24 is connected between the output end of amplifier 10 and the input ends of amplifiers 13 and 14 (second post-stage amplifiers). The other part of input coil 201 is an example of a fourth inductor, and output coil 242 is an example of a second inductor.

[0193] One end of the output coil 232 is connected to the input terminal of the amplifier 11, and the other end of the output coil 232 is connected to the input terminal of the amplifier 12. One end of the input coil 201 is connected to the output terminal of the amplifier 10, and the other end of the input coil 201 is connected to ground.

[0194] According to the above circuit configuration, it is possible to provide a multi-band radio frequency module 1H capable of transmitting high band group signals and middle band group signals.

[0195] The matching circuits 61 and 62, the switches 42 and 43, and the filter 52 do not necessarily have to be included in the high-frequency module 1H.

[0196] [13 Layout of High-Frequency Module 1H According to Ninth Example] The layout of circuit components constituting the high-frequency module 1H according to the ninth example will be described. Fig. 10B is a plan view of the high-frequency module 1H according to the ninth example. Fig. 10C is a cross-sectional view of the high-frequency module 1H according to the ninth example. Fig. 10B is a plan view (see-through) of the module substrate 90 from the positive side of the z-axis. Fig. 10C is a cross-sectional view taken along line XC-XC in Fig. 10B.

[0197] As shown in Fig. 10B, high-frequency module 1H includes a module substrate 90 in addition to the circuit components shown in Fig. 10A. Note that Figs. 10B and 10C do not show all of the circuit components shown in Fig. 10A, but filters 51 to 53, switches 42 and 43, control circuit 70, matching circuits 61 and 62, antenna connection terminal 100, and signal input terminal 111, which are not shown in Fig. 10B, may also be disposed on module substrate 90. Also, in Figs. 10B and 10C, some of the wiring connecting module substrate 90 and each circuit component is omitted.

[0198] The high-frequency module 1H according to this embodiment differs from the high-frequency module 1 according to Example 1 in the arrangement positions of the transformers 23 and 24. Therefore, in the following, the description of the high-frequency module 1H according to this embodiment will be omitted for the same arrangement configuration as that of the high-frequency module 1 according to Example 1, and the description will focus on the different arrangement configuration.

[0199] 10B and 10C, amplifiers 10 to 14 are arranged on a main surface 90a of module substrate 90. Transformers 23, 24, 31, and 32 are also arranged inside module substrate 90. Note that at least a portion of each of transformers 23, 24, 31, and 32 may be exposed on main surface 90a or 90b of module substrate 90.

[0200] Each of the input coil 201 and the output coil 232 of the transformer 23 is formed by a planar coil formed on the module substrate 90. Each of the input coil 201 and the output coil 242 of the transformer 24 is formed by a planar coil formed on the module substrate 90. The region where the input coil 201 is formed and the region where the output coil 232 is formed are arranged so that they at least partially overlap when the module substrate 90 is viewed from above. The region where the input coil 201 is formed and the region where the output coil 242 is formed are arranged so that they at least partially overlap when the module substrate 90 is viewed from above.

[0201] Here, when the module substrate 90 is viewed in a plane, the output side coil 232 and the output side coil 242 at least partially overlap, and when the module substrate 90 is viewed in cross section, the output side coil 232 is positioned closer to the main surface 90a of the module substrate 90 than the output side coil 242.

[0202] This allows the output coil 232 and the output coil 242 to be arranged overlapping in the normal direction of the module substrate 90, thereby reducing the area of ​​the high-frequency module 1H. Furthermore, the length of the connection wiring between the output coil 232, which transmits signals on the higher frequency side, and the amplifiers 11 and 12 can be shortened, effectively suppressing deterioration of the signal transmission characteristics in the first signal path. Therefore, a multi-band high-frequency module 1H in which deterioration of the transmission characteristics is suppressed can be provided.

[0203] As shown in FIG. 10C , when module substrate 90 is viewed in plan, transformer 23 and transformer 24 may at least partially overlap, and transformer 23 may be disposed closer to main surface 90 a of module substrate 90 than transformer 24.

[0204] When module substrate 90 is viewed from above, transformers 23 and 24 are disposed between semiconductor IC 71 and semiconductor IC 72 .

[0205] This allows the distance between the output coil 232 and the amplifiers 11 and 12, and the distance between the output coil 242 and the amplifiers 13 and 14 to be shortened in a balanced manner, thereby suppressing deterioration of the signal transmission characteristics in the first signal path and the second signal path.

[0206] Furthermore, in this embodiment, by arranging the amplifiers 10 to 14 on the main surface 90a of the module substrate 90, the transformers 23 and 24 connected to the amplifiers 10 to 14 can be arranged on the main surface 90a side of the module substrate 90, thereby making it possible to make the module substrate 90 thinner.

[0207] [14 Effects, etc.] As described above, the high-frequency module 1 (and 1A, 1B, 1C, 1D, 1H) according to the first embodiment (and embodiments 2, 3, 4, 5, 9) includes the module substrate 90 having mutually opposing main surfaces 90a and 90b, the amplifier 10, the amplifiers 11 and 12 arranged on the main surface 90a, the amplifiers 13 and 14 also arranged on the main surface 90a, the transformer 21 connected between the output end of the amplifier 10 and the input ends of the amplifiers 11 and 12, the transformer 22 connected between the output end of the amplifier 10 and the input ends of the amplifiers 13 and 14, and the transformer 23 connected to the output ends of the amplifiers 11 and 12 and configured to transmit a passband including the transmission band of band A. and a filter 53 connected to the output ends of the amplifiers 13 and 14 and having a passband that includes a transmission band of band C that is lower in frequency than band A, the transformer 21 includes an output coil 212 that is configured with a planar coil formed on the module substrate 90, and the transformer 22 includes an output coil 222 that is configured with a planar coil formed on the module substrate 90, and when the module substrate 90 is viewed from above, the output coil 212 and the output coil 222 at least partially overlap, and the output coil 212 is positioned closer to the main surface 90 a of the module substrate 90 than the output coil 222.

[0208] This allows the output coil 212 and the output coil 222 to be arranged overlapping in the normal direction of the module substrate 90, thereby reducing the area of ​​the high-frequency module 1. Furthermore, the parasitic inductance components added to the output coils 212 and 222 have a greater effect on the transmission characteristics as the frequency of the high-frequency signal transmitted through the high-frequency module 1 increases. In contrast, because the output coil 212 is arranged closer to the main surface 90a than the output coil 222, the distance between the amplifiers 11 and 12 arranged on the main surface 90a and the output coil 212 can be made shorter than the distance between the amplifiers 13 and 14 arranged on the main surface 90a and the output coil 222. This shortens the wiring connecting the output coil 212, which transmits signals at higher frequencies, and the amplifiers 11 and 12, effectively suppressing degradation of the signal transmission characteristics in the signal path for band A. This allows for a multi-band high-frequency module 1 with suppressed degradation of the transmission characteristics.

[0209] For example, the high-frequency module 1 (and 1A, 1B, 1C, 1D, and 1H) further includes a switch 41 having a common terminal 41a and selection terminals 41b and 41c, the transformer 21 has an output coil 212 and an input coil 211 formed by a planar coil formed on the module substrate 90, the transformer 22 has an output coil 222 and an input coil 221 formed by a planar coil formed on the module substrate 90, and the output end of the amplifier 10 is connected to the common terminal 41a, one end of the input coil 211 is connected to the selection terminal 41b, and the other end of the input coil 211 is One end of the output coil 212 is connected to the input terminal of the amplifier 11, the other end of the output coil 212 is connected to the input terminal of the amplifier 12, one end of the input coil 221 is connected to the selection terminal 41c, the other end of the input coil 221 is connected to the ground, one end of the output coil 222 is connected to the input terminal of the amplifier 13, and the other end of the output coil 222 is connected to the input terminal of the amplifier 14, when the module substrate 90 is viewed in a plane, the transformers 21 and 22 at least partially overlap, and the transformer 21 is positioned closer to the main surface 90a of the module substrate 90 than the transformer 22.

[0210] This allows the transformers 21 and 22 to be arranged overlapping in the normal direction of the module substrate 90, thereby reducing the area of ​​the high-frequency module 1. Furthermore, the length of the connection wiring between the output coil 212, which transmits signals on the higher frequency side, and the amplifiers 11 and 12 can be shortened, effectively suppressing degradation of the signal transmission characteristics in the signal path for band A.

[0211] Furthermore, for example, in a high-frequency module 1H according to the ninth modification, the transformer 23 has an output coil 232 and an input coil 201 configured as a planar coil formed on the module substrate 90, the transformer 24 has an output coil 242 and an input coil 201, one end of the input coil 201 is connected to the output terminal of the amplifier 10, the other end of the input coil 201 is connected to ground, one end of the output coil 232 is connected to the input terminal of the amplifier 11, the other end of the output coil 232 is connected to the input terminal of the amplifier 12, one end of the output coil 242 is connected to the input terminal of the amplifier 13, and the other end of the output coil 242 is connected to the input terminal of the amplifier 14, when the module substrate 90 is viewed from above, the transformers 23 and 24 at least partially overlap, and the transformer 23 is disposed closer to the main surface 90a of the module substrate 90 than the transformer 24.

[0212] This allows the area of ​​the high-frequency module 1H to be reduced because the output coil 232 and the output coil 242 are arranged overlapping in the normal direction of the module substrate 90. Furthermore, the connection wiring between the output coil 232, which transmits signals on the higher frequency side, and the amplifiers 11 and 12 can be shortened, effectively suppressing degradation of the signal transmission characteristics in the signal path for Band A.

[0213] For example, in high-frequency module 1 (and 1A, 1B, 1C, and 1D), amplifiers 11 and 12 are included in semiconductor IC 71, amplifiers 13 and 14 are included in semiconductor IC 72, and amplifier 10 is included in semiconductor IC 73, and in the above plan view, output coils 212 and 222 are arranged between semiconductor IC 71 and semiconductor IC 72.

[0214] This allows the distance between the output coil 212 and the amplifiers 11 and 12, and the distance between the output coil 222 and the amplifiers 13 and 14 to be shortened in a balanced manner, thereby suppressing deterioration of the signal transmission characteristics in the signal paths of band A and band C.

[0215] Furthermore, for example, in the high frequency module 1 (and 1A, 1C, and 1D), the semiconductor IC 73 is disposed on the main surface 90a.

[0216] This allows the transformers 21 and 22 connected to the amplifiers 10 to 14 to be disposed on the main surface 90a side of the module substrate 90, thereby making it possible to make the module substrate 90 thinner.

[0217] Furthermore, for example, in the high-frequency module 1A (and 1D), the semiconductor IC 73 at least partially overlaps with the output coils 212 and 222 in the plan view.

[0218] This allows the area of ​​the main surface 90a to be further reduced, thereby enabling the high-frequency module 1A (and 1D) to be made smaller.

[0219] Furthermore, for example, in the high-frequency module 1B, the semiconductor IC 73 is disposed on the main surface 90b.

[0220] In this way, the amplifier 10 and the amplifiers 11 to 14 are arranged on both sides of the module substrate 90, so that the high frequency module 1B can be made smaller.

[0221] Furthermore, for example, in the high-frequency module 1B, the semiconductor IC 73 at least partially overlaps with the output coils 212 and 222 in the plan view.

[0222] This allows the area of ​​the main surface 90b to be reduced, thereby enabling the high frequency module 1B to be miniaturized.

[0223] For example, the high-frequency module 1C (and 1D) further includes a switch 42 connected between the amplifiers 11 and 12 and the filter 51, and between the amplifiers 13 and 14 and the filter 53, for switching between connection and disconnection between the amplifiers 11 and 12 and the filter 51, and between connection and disconnection between the amplifiers 13 and 14 and the filter 53, and a control circuit 70 for controlling the amplifiers 10 to 14, and the switch 42 and the control circuit 70 are included in a semiconductor IC 74.

[0224] According to this, the amplifier 10, the control circuit 70, and the switch 42 are integrated into the semiconductor IC 74, so that the high frequency module 1C (and 1D) can be made smaller.

[0225] Furthermore, for example, in the high-frequency module 1C (and 1D), the amplifier 10, the control circuit 70, and the switch 42 are arranged in the semiconductor IC 74 in order of proximity to the output coils 212 and 222 in the plan view.

[0226] This allows the distance between amplifier 10 and transformers 21 and 22 to be shortened, thereby reducing transmission loss in the wiring connecting amplifier 10 and transformers 21 and 22. Furthermore, by sandwiching control circuit 70 between amplifier 10 and switch 42, it is possible to smooth the flow of control signals to each semiconductor IC and ensure isolation between amplifier 10 and switch 42.

[0227] The high-frequency module 1E according to the sixth embodiment includes a module substrate 90 having principal surfaces 90a and 90b facing each other, amplifiers 10a and 10b, amplifiers 11 and 12 arranged on the principal surface 90a, amplifiers 13 and 14 arranged on the principal surface 90a, a transformer 21 connected between the output terminal of the amplifier 10a and the input terminals of the amplifiers 11 and 12, a transformer 22 connected between the output terminal of the amplifier 10b and the input terminals of the amplifiers 13 and 14, a filter 51 connected to the output terminals of the amplifiers 11 and 12 and having a passband including the transmission band of band A, and amplifiers 13 and 14. and a filter 53 connected to output ends 3 and 14 and having a pass band including the transmission band of band C, which is lower in frequency than band A. The transformer 21 includes an output coil 212 configured with a planar coil formed on the module substrate 90, and the transformer 22 includes an output coil 222 configured with a planar coil formed on the module substrate 90. When the module substrate 90 is viewed from above, the output coil 212 and the output coil 222 at least partially overlap, and the output coil 212 is positioned closer to the main surface 90a of the module substrate 90 than the output coil 222.

[0228] This allows the output coil 212 and the output coil 222 to be positioned overlapping in the normal direction of the module substrate 90, thereby reducing the area of ​​the high-frequency module 1E. Furthermore, the parasitic inductance components added to the output coils 212 and 222 have a greater effect on the transmission characteristics as the frequency of the high-frequency signal transmitted through the high-frequency module 1E increases. In contrast, because the output coil 212 is positioned closer to the main surface 90a than the output coil 222, the distance between the amplifiers 11 and 12, which are located on the main surface 90a, and the output coil 212 can be made shorter than the distance between the amplifiers 13 and 14, which are located on the main surface 90a, and the output coil 222. This shortens the wiring connecting the output coil 212, which transmits higher-frequency signals, and the amplifiers 11 and 12, thereby effectively suppressing degradation of the signal transmission characteristics in the signal path for band A. This allows for a multi-band high-frequency module 1E with suppressed degradation of the transmission characteristics.

[0229] For example, in high-frequency module 1E, amplifiers 11 and 12 are included in semiconductor IC 71, amplifiers 13 and 14 are included in semiconductor IC 72, and amplifiers 10a and 10b are included in semiconductor IC 75, and in the above plan view, output side coils 212 and 222 are arranged between semiconductor IC 71 and semiconductor IC 72.

[0230] This allows the distance between the output coil 212 and the amplifiers 11 and 12, and the distance between the output coil 222 and the amplifiers 13 and 14 to be shortened in a balanced manner, thereby suppressing deterioration of the signal transmission characteristics in the signal paths of band A and band C.

[0231] Furthermore, for example, in the high-frequency module 1E, the semiconductor IC 75 at least partially overlaps with the output coils 212 and 222 in the plan view.

[0232] This allows the area of ​​the main surface 90a to be further reduced, thereby enabling the high-frequency module 1E to be made smaller.

[0233] For example, the high-frequency module 1E further includes a switch 42 connected between the amplifiers 11 and 12 and the filter 51, and between the amplifiers 13 and 14 and the filter 53, and configured to switch between connection and disconnection between the amplifiers 11 and 12 and the filter 51, and between connection and disconnection between the amplifiers 13 and 14 and the filter 53, and a control circuit 70 for controlling the amplifiers 10a, 10b, 11 to 14, wherein the switch 42 and the control circuit 70 are included in a semiconductor IC 75, and in the semiconductor IC 75, the amplifiers 10a and 10b, the control circuit 70, and the switch 42 are arranged in order of proximity to the output coils 212 and 222 in the planar view described above.

[0234] This allows the amplifiers 10a and 10b, the control circuit 70, and the switch 42 to be integrated into the semiconductor IC 75, thereby reducing the size of the high-frequency module 1E. Furthermore, the distance between the amplifiers 10a and 10b and the transformers 21 and 22 can be shortened, thereby reducing transmission loss in the wiring connecting the amplifiers 10a and 10b and the transformers 21 and 22. Furthermore, by sandwiching the control circuit 70 between the amplifiers 10a and 10b and the switch 42, it is possible to smooth the flow of control signals to each semiconductor IC and ensure isolation between the amplifiers 10a and 10b and the switch 42.

[0235] Furthermore, for example, in the high-frequency module 1E, the amplifier 10b is arranged between the amplifier 10a and the amplifiers 11 and 12, and the amplifier 10a is arranged between the amplifier 10b and the amplifiers 13 and 14 in the plan view.

[0236] This allows a sufficient distance between amplifier 10a and amplifiers 11 and 12, thereby preventing interference and oscillation between amplifier 10a and amplifiers 11 and 12. Furthermore, a sufficient distance between amplifier 10b and amplifiers 13 and 14 allows a sufficient distance between amplifier 10b and amplifiers 13 and 14, thereby preventing interference and oscillation between amplifier 10b and amplifiers 13 and 14.

[0237] Furthermore, for example, the high-frequency module 1E further includes a ground plane electrode disposed between the output coil 212 and the output coil 222.

[0238] This makes it possible to suppress mutual interference between the transformer 21 and the transformer 22 .

[0239] Furthermore, the high-frequency module 1F (and 1G) according to the seventh embodiment (and the eighth embodiment) includes a module substrate 90 having principal surfaces 90a and 90b facing each other, an amplifier 10, amplifiers 15 and 16 arranged on the principal surface 90a, a switch 41 having a common terminal 41a connected to the output end of the amplifier 10, a selection terminal 41b connected to the input ends of the amplifiers 15 and 16, and a selection terminal 41c connected to the input ends of the amplifiers 15 and 16, a transformer 21 connected between the selection terminal 41b and the input ends of the amplifiers 15 and 16, a transformer 22 connected between the selection terminal 41c and the input ends of the amplifiers 15 and 16, a filter 51 having a pass band including the transmission band of band A, a filter 53 having a pass band including the transmission band of band C that is lower in frequency than band A, and a common terminal 41b connected to the output ends of the amplifiers 15 and 16. and a switch 42 having terminals 42a and 42b, a selection terminal 42c connected to the input terminal of filter 51, and a selection terminal 42e connected to the input terminal of filter 53; transformer 21 includes an output coil 212 formed of a planar coil formed on module substrate 90, and transformer 22 includes an output coil 222 formed of a planar coil formed on module substrate 90; when common terminal 41a and selection terminal 41b are connected, common terminal 42a and selection terminal 42c are connected; when common terminal 41a and selection terminal 41c are connected, common terminal 42b and selection terminal 42e are connected; when module substrate 90 is viewed from above, output coil 212 and output coil 222 at least partially overlap, and output coil 212 is positioned closer to main surface 90a of module substrate 90 than output coil 222.

[0240] This allows the output coil 212 and the output coil 222 to be arranged overlapping in the normal direction of the module substrate 90, thereby reducing the area of ​​the high-frequency module 1F (and 1G). Furthermore, the length of the connection wiring between the output coil 212, which transmits signals on the higher frequency side, and the amplifiers 15 and 16 can be shortened, effectively suppressing degradation of the signal transmission characteristics in the signal path for band A. Therefore, a multi-band-compatible high-frequency module 1F (and 1G) can be provided in which degradation of the transmission characteristics is suppressed.

[0241] For example, the high-frequency module 1F (and 1G) further includes a control circuit 70 that controls the amplifiers 10, 15, and 16, the amplifier 10, switches 41 and 42, and the control circuit 70 being included in a semiconductor IC 76, the amplifiers 15 and 16 being included in a semiconductor IC 77, and in the semiconductor IC 76, the switch 41, the amplifier 10, the control circuit 70, and the switch 42 are arranged in order of proximity to the output coils 212 and 222 in the planar view described above.

[0242] This allows the distance between the transformers 21 and 22 and the switch 41 to be shortened, and also the distance between the switch 41 and the amplifier 10 to be shortened, thereby reducing transmission loss in the wiring connecting the amplifier 10 and the transformers 21 and 22. Furthermore, by sandwiching the control circuit 70 between the amplifier 10 and the switch 42, it is possible to smooth the flow of control signals to each semiconductor IC and ensure isolation between the amplifier 10 and the switch 42.

[0243] Furthermore, for example, in the high-frequency module 1G, the semiconductor IC 76 is disposed on the main surface 90b, and at least a portion of the semiconductor IC 76 overlaps with the output coils 212 and 222 in the plan view.

[0244] This allows the area of ​​the main surface 90b to be further reduced, thereby enabling the high-frequency module 1G to be made smaller.

[0245] Furthermore, for example, in the high-frequency module 1G, the module substrate 90 includes via conductors 97 that are joined to the semiconductor IC 77 and that pass through the module substrate 90 and the semiconductor IC 76 .

[0246] This allows heat generated by the amplifiers 15 and 16 to be dissipated to the main surface 90 b of the module substrate 90 through the via conductors 97 .

[0247] (Other Embodiments, etc.) While the high-frequency modules according to the embodiments of the present invention have been described above using examples and modifications, the high-frequency modules according to the present invention are not limited to the above examples and modifications. The present invention also includes other embodiments realized by combining any of the components in the above examples and modifications, modifications obtained by applying various modifications to the above examples and modifications that would occur to those skilled in the art without departing from the spirit of the present invention, and various devices incorporating the above high-frequency modules.

[0248] For example, in the high-frequency modules according to the above-described embodiments and modifications, other circuit elements and wiring may be inserted between the paths connecting the circuit elements and signal paths disclosed in the drawings.

[0249] Furthermore, in the radio-frequency modules according to the above-described embodiments and modifications, the combination of amplifiers 11 and 12, the combination of amplifiers 13 and 14, and the combination of amplifiers 15 and 16 are not limited to differential amplification type amplifier circuits (in which the phase difference between the output signals is approximately 180°), and may be balanced type amplifier circuits (in which the phase difference between the output signals is approximately 90°), or may be Doherty type amplifier circuits (in which one amplifier is a carrier amplifier and the other amplifier is a peak amplifier).

[0250] The features of the high frequency modules described based on the above embodiments will be described below.

[0251] <1> A module substrate having first and second main surfaces opposing each other, a pre-stage amplifier, a first post-stage amplifier arranged on the first main surface, a second post-stage amplifier arranged on the first main surface, a first matching circuit connected between an output terminal of the pre-stage amplifier and an input terminal of the first post-stage amplifier, a second matching circuit connected between the output terminal of the pre-stage amplifier and an input terminal of the second post-stage amplifier, a first filter connected to the output terminal of the first post-stage amplifier and having a pass band including a transmission band of a first band, and a second filter connected to the output terminal of the second post-stage amplifier and having a pass band including a transmission band of a second band that is lower in frequency than the first band, wherein the first matching circuit includes a first inductor configured by a planar coil formed on the module substrate, and the second matching circuit includes a second inductor configured by a planar coil formed on the module substrate, and when the module substrate is viewed from above, at least a portion of the first inductor and the second inductor overlap, a first inductor disposed closer to the first main surface of the module substrate than the second inductor;

[0252] <2> The amplifier further includes a first switch having a first common terminal, a first selection terminal, and a second selection terminal, wherein the first subsequent-stage amplifier is composed of a first amplifying element and a second amplifying element, the second subsequent-stage amplifier is composed of a third amplifying element and a fourth amplifying element, the first matching circuit includes a first transformer having the first inductor and a third inductor formed by a planar coil formed on the module substrate, and the second matching circuit includes a second transformer having the second inductor and a fourth inductor formed by a planar coil formed on the module substrate, an output terminal of the previous-stage amplifier is connected to the first common terminal, one end of the third inductor is connected to the first selection terminal, and the other end of the third inductor is connected to ground, one end of the first inductor is connected to an input terminal of the first amplifying element, and the other end of the first inductor is connected to an input terminal of the second amplifying element, one end of the fourth inductor is connected to the second selection terminal, and the other end of the fourth inductor is connected to ground, the second inductor has one end connected to an input terminal of the third amplifying element and the other end connected to an input terminal of the fourth amplifying element; when the module substrate is viewed in a plane, the first transformer and the second transformer at least partially overlap; and the first transformer is disposed closer to the first main surface of the module substrate than the second transformer.

[0253] <3> The high-frequency module according to <1>, wherein the first subsequent-stage amplifier is composed of a first amplifying element and a second amplifying element; the second subsequent-stage amplifier is composed of a third amplifying element and a fourth amplifying element; the first matching circuit includes a first transformer having the first inductor and a third inductor configured with a planar coil formed on the module substrate; the second matching circuit includes a second transformer having the second inductor and the third inductor; one end of the third inductor is connected to an output terminal of the previous-stage amplifier and the other end of the third inductor is connected to ground; one end of the first inductor is connected to an input terminal of the first amplifying element and the other end of the first inductor is connected to the input terminal of the second amplifying element; one end of the second inductor is connected to the input terminal of the third amplifying element and the other end of the second inductor is connected to the input terminal of the fourth amplifying element; when the module substrate is seen in a plan view, the first transformer and the second transformer at least partially overlap each other; and the first transformer is arranged closer to the first main surface of the module substrate than the second transformer.

[0254] <4> The radio-frequency module according to any one of <1> to <3>, wherein the first rear-stage amplifier is included in a first semiconductor IC, the second rear-stage amplifier is included in a second semiconductor IC, the pre-stage amplifier is included in a third semiconductor IC, and in the planar view, the first inductor and the second inductor are disposed between the first semiconductor IC and the second semiconductor IC.

[0255] <5> The high-frequency module according to <4>, wherein the third semiconductor IC is disposed on the first main surface.

[0256] <6> The high-frequency module according to <5>, wherein the third semiconductor IC at least partially overlaps with the first inductor and the second inductor in the plan view.

[0257] <7> The high-frequency module according to <4>, wherein the third semiconductor IC is disposed on the second main surface.

[0258] <8> The high-frequency module according to <7>, wherein the third semiconductor IC at least partially overlaps with the first inductor and the second inductor in the plan view.

[0259] <9> The radio-frequency module according to any one of <4> to <8>, further comprising: a second switch connected between the first rear-stage amplifier and the first filter and between the second rear-stage amplifier and the second filter, the second switch switching between connection and disconnection between the first rear-stage amplifier and the first filter and switching between connection and disconnection between the second rear-stage amplifier and the second filter; and a control circuit controlling the pre-stage amplifier, the first rear-stage amplifier, and the second rear-stage amplifier, wherein the second switch and the control circuit are included in the third semiconductor IC.

[0260] <10> The high-frequency module according to <9>, wherein in the third semiconductor IC, the pre-stage amplifier, the control circuit, and the second switch are arranged in order of proximity to the first inductor and the second inductor in the planar view.

[0261] <11> A module substrate having first and second main surfaces opposing each other, a first pre-stage amplifier and a second pre-stage amplifier, a first post-stage amplifier disposed on the first main surface, a second post-stage amplifier disposed on the first main surface, a first matching circuit connected between an output terminal of the first pre-stage amplifier and an input terminal of the first post-stage amplifier, a second matching circuit connected between the output terminal of the second pre-stage amplifier and an input terminal of the second post-stage amplifier, a first filter connected to the output terminal of the first post-stage amplifier and having a pass band including a transmission band of a first band, and a second filter connected to the output terminal of the second post-stage amplifier and having a pass band including a transmission band of a second band that is lower in frequency than the first band, wherein the first matching circuit includes a first inductor formed by a planar coil formed on the module substrate, and the second matching circuit includes a second inductor formed by a planar coil formed on the module substrate, and when the module substrate is viewed from above, at least a portion of the first inductor and the second inductor overlap, a first inductor disposed closer to the first main surface of the module substrate than the second inductor;

[0262] <12> The high-frequency module according to <11>, wherein the first rear-stage amplifier is included in a first semiconductor IC, the second rear-stage amplifier is included in a second semiconductor IC, the first pre-stage amplifier and the second pre-stage amplifier are included in a third semiconductor IC, and in the planar view, the first inductor and the second inductor are arranged between the first semiconductor IC and the second semiconductor IC.

[0263] <13> The high-frequency module according to <12>, wherein the third semiconductor IC at least partially overlaps with the first inductor and the second inductor in the plan view.

[0264] <14> The high-frequency module according to <12> or <13> further includes: a second switch connected between the first post-stage amplifier and the first filter and between the second post-stage amplifier and the second filter, and configured to switch between connection and disconnection of the first post-stage amplifier and the first filter, and to switch between connection and disconnection of the second post-stage amplifier and the second filter; and a control circuit configured to control the first pre-stage amplifier, the second pre-stage amplifier, the first post-stage amplifier, and the second post-stage amplifier, wherein the second switch and the control circuit are included in the third semiconductor IC, and the first pre-stage amplifier and the second pre-stage amplifier, the control circuit, and the second switch are arranged in the third semiconductor IC in order of proximity to the first inductor and the second inductor in the planar view.

[0265] <15> The high-frequency module according to <14>, wherein, in the planar view, the second pre-stage amplifier is arranged between the first pre-stage amplifier and the first post-stage amplifier, and the first pre-stage amplifier is arranged between the second pre-stage amplifier and the second post-stage amplifier.

[0266] <16> The high-frequency module according to any one of <11> to <15>, further comprising a ground plane electrode disposed between the first inductor and the second inductor.

[0267] <17> A module substrate having first and second main surfaces opposing each other, a pre-amplifier, a post-amplifier disposed on the first main surface, a first switch having a first common terminal connected to an output terminal of the pre-amplifier, a first selection terminal connected to an input terminal of the post-amplifier, and a second selection terminal connected to the input terminal of the post-amplifier, a first matching circuit connected between the first selection terminal and the input terminal of the post-amplifier, a second matching circuit connected between the second selection terminal and the input terminal of the post-amplifier, a first filter having a pass band including a transmission band of a first band, and a second filter having a pass band including a transmission band of a second band lower in frequency than the first band, and a second switch having a second common terminal connected to the output terminal of the post-amplifier, a third selection terminal connected to the input terminal of the first filter, and a fourth selection terminal connected to the input terminal of the second filter, wherein the first matching circuit includes a first inductor constituted by a planar coil formed on the module substrate, and the second matching circuit includes a second inductor constituted by a planar coil formed on the module substrate, a high-frequency module in which, when the first common terminal and the first selection terminal are connected, the second common terminal and the third selection terminal are connected, and when the first common terminal and the second selection terminal are connected, the second common terminal and the fourth selection terminal are connected; when the module substrate is viewed in a plane, the first inductor and the second inductor at least partially overlap each other; and the first inductor is disposed closer to the first main surface of the module substrate than the second inductor.

[0268] <18> The high-frequency module according to <17> further comprises a control circuit that controls the pre-stage amplifier and the post-stage amplifier, wherein the pre-stage amplifier, the first switch, the second switch, and the control circuit are included in a first semiconductor IC, and the post-stage amplifier is included in a second semiconductor IC, and in the first semiconductor IC, the first switch, the pre-stage amplifier, the control circuit, and the second switch are arranged in order of proximity to the first inductor and the second inductor in the planar view.

[0269] <19> The high-frequency module according to <18>, wherein the first semiconductor IC is disposed on the second main surface, and in the plan view, the first semiconductor IC at least partially overlaps with the first inductor and the second inductor.

[0270] <20> The high-frequency module according to <19>, wherein the module substrate is joined to the second semiconductor IC and includes a via conductor that passes through the module substrate and the first semiconductor IC.

[0271] The present invention can be widely used as an amplifier circuit disposed in a front end portion of communication devices such as mobile phones.

[0272] REFERENCE SIGNS LIST 1, 1A, 1B, 1C, 1D, 1E, 1F, 1G, 1H High frequency module 2 Antenna 3 RFIC 4 Communication device 10, 10a, 10b, 11, 12, 13, 14, 15, 16 Amplifier 21, 22, 23, 24, 31, 32 Transformer 41, 42, 43 Switch 41a, 42a, 42b Common terminal 41b, 41c, 42c, 42d, 42e Selection terminal 51, 52, 53 Filter 61, 62 Matching circuit 70 Control circuit 71, 72, 73, 74, 75, 76, 77 Semiconductor IC 90 Module substrate 90a, 90b Main surface 95, 96 Ground plane electrode 97 Via conductor 100 Antenna connection terminal 110, 111, 112 Signal input terminals 201, 211, 221, 311, 321 Input side coils 212, 222, 232, 242, 312, 322 Output side coils

Claims

1. A module substrate having first and second main surfaces opposing each other, a pre-amplifier, a first post-stage amplifier arranged on the first main surface, a second post-stage amplifier arranged on the first main surface, a first matching circuit connected between the output end of the pre-stage amplifier and the input end of the first post-stage amplifier, a second matching circuit connected between the output end of the pre-stage amplifier and the input end of the second post-stage amplifier, a first filter connected to the output end of the first post-stage amplifier and having a pass band including a transmission band of a first band, and a second filter connected to the output end of the second post-stage amplifier and having a pass band including a transmission band of a second band lower in frequency than the first band, wherein the first matching circuit includes a first inductor formed by a planar coil formed on the module substrate, and the second matching circuit includes a second inductor formed by a planar coil formed on the module substrate, wherein the first inductor and the second inductor at least partially overlap when the module substrate is viewed from above, and the first inductor is arranged closer to the first main surface of the module substrate than the second inductor. High frequency module.

2. The module further comprises a first switch having a first common terminal, a first selection terminal, and a second selection terminal, wherein the first subsequent stage amplifier is composed of a first amplifying element and a second amplifying element, the second subsequent stage amplifier is composed of a third amplifying element and a fourth amplifying element, the first matching circuit includes a first transformer having the first inductor and a third inductor formed by a planar coil formed on the module substrate, the second matching circuit includes a second transformer having the second inductor and a fourth inductor formed by a planar coil formed on the module substrate, an output terminal of the previous stage amplifier is connected to the first common terminal, one end of the third inductor is connected to the first selection terminal and the other end of the third inductor is connected to ground, one end of the first inductor is connected to an input terminal of the first amplifying element and the other end of the first inductor is connected to an input terminal of the second amplifying element, one end of the fourth inductor is connected to the second selection terminal, and the other end of the fourth inductor is connected to ground, 2. The radio-frequency module according to claim 1, wherein one end of the second inductor is connected to an input terminal of the third amplifying element and the other end of the second inductor is connected to an input terminal of the fourth amplifying element; when the module substrate is viewed from above, the first transformer and the second transformer at least partially overlap each other; and the first transformer is disposed closer to the first main surface of the module substrate than the second transformer.

3. The high-frequency module according to claim 1, wherein the first subsequent-stage amplifier is composed of a first amplifying element and a second amplifying element; the second subsequent-stage amplifier is composed of a third amplifying element and a fourth amplifying element; the first matching circuit includes a first transformer having the first inductor and a third inductor composed of a planar coil formed on the module substrate; the second matching circuit includes a second transformer having the second inductor and the third inductor; one end of the third inductor is connected to the output terminal of the previous-stage amplifier and the other end of the third inductor is connected to ground; one end of the first inductor is connected to the input terminal of the first amplifying element and the other end of the first inductor is connected to the input terminal of the second amplifying element; one end of the second inductor is connected to the input terminal of the third amplifying element and the other end of the second inductor is connected to the input terminal of the fourth amplifying element; when the module substrate is viewed from above, the first transformer and the second transformer at least partially overlap each other; and the first transformer is located closer to the first main surface of the module substrate than the second transformer.

4. The radio frequency module according to any one of claims 1 to 3, wherein the first rear-stage amplifier is included in a first semiconductor IC, the second rear-stage amplifier is included in a second semiconductor IC, and the front-stage amplifier is included in a third semiconductor IC, and in the planar view, the first inductor and the second inductor are arranged between the first semiconductor IC and the second semiconductor IC.

5. The high frequency module according to claim 4, wherein the third semiconductor IC is disposed on the first main surface.

6. The high-frequency module according to claim 5, wherein, in the plan view, the third semiconductor IC at least partially overlaps with the first inductor and the second inductor.

7. The high frequency module according to claim 4, wherein the third semiconductor IC is disposed on the second main surface.

8. The high-frequency module according to claim 7, wherein, in the plan view, the third semiconductor IC at least partially overlaps with the first inductor and the second inductor.

9. The radio frequency module according to any one of claims 4 to 8, further comprising: a second switch connected between the first rear-stage amplifier and the first filter and between the second rear-stage amplifier and the second filter, for switching between connection and disconnection between the first rear-stage amplifier and the first filter and between connection and disconnection between the second rear-stage amplifier and the second filter; and a control circuit for controlling the pre-stage amplifier, the first rear-stage amplifier and the second rear-stage amplifier, wherein the second switch and the control circuit are included in the third semiconductor IC.

10. The high-frequency module according to claim 9, wherein in the third semiconductor IC, the pre-stage amplifier, the control circuit, and the second switch are arranged in order of proximity to the first inductor and the second inductor in the plan view.

11. A module substrate having first and second main surfaces opposing each other, a first pre-stage amplifier and a second pre-stage amplifier, a first post-stage amplifier disposed on the first main surface, a second post-stage amplifier disposed on the first main surface, a first matching circuit connected between the output terminal of the first pre-stage amplifier and the input terminal of the first post-stage amplifier, a second matching circuit connected between the output terminal of the second pre-stage amplifier and the input terminal of the second post-stage amplifier, a first filter connected to the output terminal of the first post-stage amplifier and having a pass band including a transmission band of a first band, and a second filter connected to the output terminal of the second post-stage amplifier and having a pass band including a transmission band of a second band lower in frequency than the first band, wherein the first matching circuit includes a first inductor formed by a planar coil formed on the module substrate, and the second matching circuit includes a second inductor formed by a planar coil formed on the module substrate, and when the module substrate is viewed from above, at least a portion of the first inductor and the second inductor overlap, a first inductor disposed closer to the first main surface of the module substrate than the second inductor; 12. The high-frequency module according to claim 11, wherein the first post-stage amplifier is included in a first semiconductor IC, the second post-stage amplifier is included in a second semiconductor IC, the first pre-stage amplifier and the second pre-stage amplifier are included in a third semiconductor IC, and in the planar view, the first inductor and the second inductor are arranged between the first semiconductor IC and the second semiconductor IC.

13. The high-frequency module according to claim 12, wherein, in the plan view, the third semiconductor IC at least partially overlaps with the first inductor and the second inductor.

14. The high-frequency module according to claim 12 or 13, further comprising: a second switch connected between the first post-stage amplifier and the first filter and between the second post-stage amplifier and the second filter, for switching between connection and disconnection between the first post-stage amplifier and the first filter and between connection and disconnection between the second post-stage amplifier and the second filter; and a control circuit for controlling the first pre-stage amplifier, the second pre-stage amplifier, the first post-stage amplifier and the second post-stage amplifier, wherein the second switch and the control circuit are included in the third semiconductor IC, and the first pre-stage amplifier and the second pre-stage amplifier, the control circuit and the second switch are arranged in the third semiconductor IC in order of proximity to the first inductor and the second inductor in the planar view.

15. The high-frequency module according to claim 14, wherein, in the plan view, the second pre-stage amplifier is disposed between the first pre-stage amplifier and the first post-stage amplifier, and the first pre-stage amplifier is disposed between the second pre-stage amplifier and the second post-stage amplifier.

16. The high-frequency module according to any one of claims 11 to 15, further comprising a ground plane electrode disposed between the first inductor and the second inductor.

17. A module substrate having first and second main surfaces facing each other, a pre-amplifier, a post-amplifier disposed on the first main surface, a first switch having a first common terminal connected to the output end of the pre-amplifier, a first selection terminal connected to the input end of the post-amplifier, and a second selection terminal connected to the input end of the post-amplifier, a first matching circuit connected between the first selection terminal and the input end of the post-amplifier, a second matching circuit connected between the second selection terminal and the input end of the post-amplifier, a first filter having a pass band including a transmission band of a first band, a second filter having a pass band including a transmission band of a second band lower in frequency than the first band, and a second switch having a second common terminal connected to the output end of the post-amplifier, a third selection terminal connected to the input end of the first filter, and a fourth selection terminal connected to the input end of the second filter, wherein the first matching circuit includes a first inductor formed by a planar coil formed on the module substrate, and the second matching circuit includes a second inductor formed by a planar coil formed on the module substrate. a high-frequency module in which, when the first common terminal and the first selection terminal are connected, the second common terminal and the third selection terminal are connected, and when the first common terminal and the second selection terminal are connected, the second common terminal and the fourth selection terminal are connected; when the module substrate is viewed in a plan view, the first inductor and the second inductor at least partially overlap each other; and the first inductor is disposed closer to the first main surface of the module substrate than the second inductor.

18. The high-frequency module according to claim 17, further comprising a control circuit for controlling the pre-stage amplifier and the post-stage amplifier, wherein the pre-stage amplifier, the first switch, the second switch, and the control circuit are included in a first semiconductor IC, and the post-stage amplifier is included in a second semiconductor IC, and the first switch, the pre-stage amplifier, the control circuit, and the second switch are arranged in the first semiconductor IC in order of proximity to the first inductor and the second inductor in the planar view.

19. The high-frequency module according to claim 18, wherein the first semiconductor IC is disposed on the second main surface, and in the plan view, the first semiconductor IC at least partially overlaps with the first inductor and the second inductor.

20. The high-frequency module according to claim 19, wherein the module substrate is joined to the second semiconductor IC and includes via conductors that pass through the module substrate and the first semiconductor IC.

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