Batch-type substrate processing device

Abstract

The present invention relates to a batch-type substrate processing device for perform processing on a substrate by forming plasma through a plurality of electrodes. The batch-type substrate processing device comprises: a reaction tube for providing a processing space in which a plurality of substrates are accommodated; and a plurality of electrodes which extend in the longitudinal direction of the reaction tube and which are arranged in the circumferential direction of the reaction tube, wherein the plurality of electrodes can include: first and second power electrodes spaced apart from each other; and first and second floating electrodes provided between the first and second power electrodes or at two sides with the first and second power electrodes at the center thereof.

Description

Batch substrate processing device

[0001] The present invention relates to a batch-type substrate processing device, and more specifically, to a batch-type substrate processing device that performs a processing process on a substrate by forming plasma using a plurality of electrodes.

[0002] In general, a substrate processing device is a device that positions a substrate to be processed within a processing space and then deposits reactive particles contained in a process gas injected within the processing space onto the substrate using a chemical vapor deposition (CVD) method or an atomic layer deposition (ALD) method. There is a single wafer type that can perform a substrate processing process on one substrate and a batch type that can perform a substrate processing process on multiple substrates simultaneously.

[0003] A batch type substrate processing device can perform a processing process by supplying high-frequency power to multiple electrodes to generate plasma, and then supplying active species (or radicals) obtained by exciting process gases injected around the multiple electrodes to the substrate. When two pairs of electrodes are used through multiple power electrodes and multiple ground electrodes, the plasma coupling that occurs in a three-electrode structure using multiple power electrodes and a common (or single) ground electrode does not occur, so plasma damage caused by the plasma potential that increases in proportion to the electric field can be suppressed or prevented. However, at the same applied voltage, the current is lowered, so the plasma density is relatively lower than that of the three-electrode structure, and the radical density is lower, which affects the deposition rate and the uniformity of the deposited film.

[0004] Accordingly, a configuration is required that can increase the radical density by improving the plasma density while preventing damage to multiple electrodes.

[0005] (Patent Document 1) Korean Patent No. 10-1145538

[0006] The present invention provides a batch-type substrate processing device that forms plasma through first and second power electrodes and first and second floating electrodes.

[0007] A batch substrate processing device according to one embodiment of the present invention includes: a reaction tube providing a processing space in which a plurality of substrates are accommodated; and a plurality of electrodes extending along the longitudinal direction of the reaction tube and arranged in a circumferential direction of the reaction tube; wherein the plurality of electrodes may include first and second power electrodes spaced apart from each other; and first and second floating electrodes provided between the first and second power electrodes or on both sides centered on the first and second power electrodes.

[0008] It may further include a capacitor, one side of which is connected to at least one of the first and second floating electrodes and the other side of which is grounded.

[0009] Both the first and second floating electrodes can be connected to one side of the capacitor.

[0010] The capacitance of the above capacitor may be 0.1 to 1,000 pF or less.

[0011] The above reaction tube includes an exhaust port for exhausting the processing space, and the plurality of electrodes can be arranged on the opposite side of the exhaust port.

[0012] It may further include a high-frequency power supply unit that supplies high-frequency power to the first and second power electrodes.

[0013] The device may further include a power distribution unit provided between the high-frequency power supply unit and the first and second power electrodes, and distributing the high-frequency power supplied from the high-frequency power supply unit and providing the high-frequency power to the first power electrode and the second power electrode, respectively.

[0014] The power distribution unit may include a distribution point at which the high-frequency power is distributed to the first power electrode and the second power electrode, and a variable capacitor provided between at least one of the first and second power electrodes.

[0015] The electrode protection unit may further include an electrode protection section that protects the plurality of electrodes, and the electrode protection unit may include a plurality of first electrode protection tubes that surround the first power electrode and the second power electrode, respectively; a plurality of second electrode protection tubes that surround the first floating electrode and the second floating electrode, respectively; and a bridge section that connects the first electrode protection tubes and the second electrode protection tubes that face each other.

[0016] The bridge section may further include a cooling gas supply section that connects the first electrode protection tube and the second electrode protection tube and supplies cooling gas to one of the first and second electrode protection tubes that are connected by the bridge section; and a cooling gas discharge section that is connected to the other of the first and second electrode protection tubes and discharges the cooling gas supplied to one of the electrode protection tubes.

[0017] The above cooling gas supply unit may be connected to two electrode protection tubes provided in the middle among the plurality of first electrode protection tubes and the plurality of second electrode protection tubes, respectively, and the above cooling gas discharge unit may be connected to two electrode protection tubes provided on both sides of the two electrode protection tubes provided in the middle, respectively.

[0018] The above cooling gas may include an inert gas.

[0019] A batch type substrate processing device according to an embodiment of the present invention uses a floating electrode instead of a ground electrode as an electrode that operates with a power electrode, and when plasma is generated, the plasma potential (V) p ) and floating potential (V f ) can be minimized, allowing more current to flow, improving plasma density and obtaining an increase in radical density.

[0020] At this time, by providing a capacitor between the floating electrode and the ground, the floating electrode can be floated, thereby lowering the overall impedance of the plasma forming section, thereby implementing an optimized low impedance, thereby lowering the applied voltage and allowing a relatively large amount of current to flow. This allows for shortening the process time by utilizing high plasma density and radicals, while simultaneously lowering the applied voltage to reduce the sputtering effect, thereby maximizing the lifespan of multiple electrodes.

[0021] When a capacitively coupled plasma (CCP) is formed using two pairs of electrodes by applying a high-frequency power (or RF power), the characteristics of an inductively coupled plasma (ICP) are expressed, and LC resonance may occur. The higher the frequency used, the greater the inductive coupling effect becomes. To prevent this, a capacitor can be installed at the bottom of the floating electrode to provide capacitance, thereby avoiding LC resonance (region).

[0022] In addition, by distributing high-frequency power supplied from a single high-frequency power source through a power distribution unit at a constant ratio and providing it to multiple power electrodes, it is possible to form uniform plasma in the gaps between the power electrodes and the floating electrodes.

[0023] FIG. 1 is a horizontal cross-sectional view showing a batch substrate processing device according to one embodiment of the present invention.

[0024] Figure 2 is a conceptual diagram for explaining a power distribution unit according to one embodiment of the present invention.

[0025] Figure 3 is a conceptual diagram for explaining an electrode protection unit according to one embodiment of the present invention.

[0026] Hereinafter, embodiments of the present invention will be described in more detail with reference to the attached drawings. However, the present invention is not limited to the embodiments disclosed below, but may be implemented in various different forms. These embodiments are provided only to ensure that the disclosure of the present invention is complete and to fully inform those skilled in the art of the scope of the invention. In the description, identical reference numerals are assigned to identical components, and the drawings may be partially exaggerated in size to accurately illustrate the embodiments of the present invention, and identical numerals in the drawings indicate identical elements.

[0027]

[0028] FIG. 1 is a horizontal cross-sectional view showing a batch substrate processing device according to one embodiment of the present invention.

[0029] Referring to FIG. 1, a batch substrate processing device (100) according to one embodiment of the present invention may include a reaction tube (110) that provides a processing space (111) in which a plurality of substrates (10) are accommodated; and a plurality of electrodes (121, 122) that extend along the longitudinal direction of the reaction tube (110) and are arranged in the circumferential direction of the reaction tube (110).

[0030] The reaction tube (110) may be formed of a heat-resistant material such as quartz or ceramic in a cylindrical shape with a closed upper portion and an open lower portion, and may provide a processing space (111) in which a plurality of substrates (10) are accommodated and processed inside. The processing space (111) of the reaction tube (110) accommodates a substrate boat in which a plurality of substrates (10) are stacked in the longitudinal direction of the reaction tube (110), and is a space in which an actual processing process (e.g., a deposition process) is performed.

[0031] Here, the substrate boat is configured to support a substrate (10), and can be formed so that a plurality of substrates (10) are loaded in the longitudinal direction (i.e., up-down direction) of the reaction tube (110), and a plurality of unit processing spaces in which the plurality of substrates (10) are individually processed can be formed.

[0032] A plurality of electrodes (121, 122) may extend along the longitudinal direction of the reaction tube (110) and may be arranged (or positioned) along the circumferential direction of the reaction tube (110). For example, the plurality of electrodes (121, 122) may have a pole or rod shape or a rod or bar shape extending along the longitudinal direction of the reaction tube (110), may be positioned side by side (or parallel) to each other, and may be positioned along the circumferential direction of the reaction tube (110).

[0033] Here, the plurality of electrodes (121, 122) may include first and second power electrodes (121a, 121b) that are spaced apart from each other; and first and second floating electrodes (122a, 122b) that are provided between the first and second power electrodes (121a, 121b) or on both sides centered around the first and second power electrodes (121a, 121b). The first and second power electrodes (121a, 121b) may be spaced apart from each other, and high-frequency power (or RF power) may be supplied (or applied) to each of them.

[0034] The first and second floating electrodes (122a, 122b) may be provided between the first and second power electrodes (121a, 121b) or on both sides centered on the first and second power electrodes (121a, 121b), and may be provided corresponding to the first power electrode (121a) and the second power electrode (121b), respectively, and may be floated. For example, the first and second floating electrodes (122a, 122b) may be provided in a space provided by separating the first power electrode (121a) and the second power electrode (121b), or the first and second power electrodes (121a, 121b) may be provided in a space provided by separating the first floating electrode (122a) and the second floating electrode (122b). At this time, each floating electrode (122a, 122b) corresponding to each of the first and second power electrodes (121a, 121b) may be provided facing each of the first and second power electrodes (121a, 121b), and plasma may be formed between the corresponding and paired power electrodes (121) and the floating electrode (122).

[0035] When high-frequency power (or high-frequency power) is supplied to the first and second power electrodes (121a, 121b), plasma can be generated between the first power electrode (121a) and the first floating electrode (122a) and between the second power electrode (121b) and the second floating electrode (122b). That is, the first and second power electrodes (121a, 121b) and the first and second floating electrodes (122a, 122b) can have a four-electrode structure, and by enabling the high-frequency power to be supplied separately to the first and second power electrodes (121a, 121b), respectively, the high-frequency power required to generate plasma or the high-frequency power to obtain a desired amount of active species (or radicals) can be reduced, thereby preventing damage to the first and second power electrodes (121a, 121b) and the first and second floating electrodes (122a, 122b) and / or generation of particles due to high-frequency power.

[0036] In detail, as in the present invention, when the first and second power electrodes (121a, 121b) and the first and second floating electrodes (122a, 122b) have a four-electrode structure, the high-frequency power required to generate plasma for decomposing process gas or to obtain a desired amount of active species can be reduced by half or significantly, thereby preventing damage to the reaction tube (110) or the like (e.g., the reaction tube, partition wall, electrode protection part, etc.) caused by the high-frequency power, and also preventing the problem of particles being generated due to damage to the reaction tube (110) or the like. For example, if the power required to decompose the process gas with sufficient energy is 100 W, if the four-electrode structure is provided with the first and second floating electrodes (122a, 122b) installed between the first and second power electrodes (121a, 121b), 50 W of power, which is lower than 100 W, can be divided and supplied to each of the first and second power electrodes (121a, 121b), so that even if a power lower than the power required to generate plasma is supplied, the same amount of active species can be obtained as when 100 W of power is ultimately supplied, and since a low power of 50 W is divided and supplied to each of the power electrodes (121), the process gas can be more effectively decomposed without generating particles due to the high power.

[0037] If we look closely, in the case of a three-electrode structure, when the same high-frequency power is applied simultaneously to two power electrodes (121a, 121b), a voltage twice as high as the voltage applied to the first power electrode (121a) and the voltage applied to the second power electrode (121b) is induced at the common ground electrode. That is, in the three-electrode structure using a common ground electrode, the voltage applied to the first power electrode (121a) and the voltage applied to the second power electrode (121b) have the same phase difference, so an electric field higher than that of the two power electrodes (121a, 121b) is induced at the ground electrode, and due to the unwanted high electric field, the plasma potential proportional to the electric field increases, causing plasma damage. In particular, plasma damage may occur and damage may occur to the electrode protection tube, partition (115), reaction tube (110), etc. around the ground electrode where double the voltage is induced.

[0038] On the other hand, in the 4-electrode structure, a voltage corresponding to half the voltage induced in the ground electrode in the 3-electrode structure (i.e., the same voltage as each voltage applied to the first power electrode and the second power electrode) can be induced in the first and second ground electrodes or the first and second floating electrodes (122a, 122b), and plasma damage caused by a high electric field due to a high voltage can be suppressed or prevented during plasma generation (Turn on) and plasma maintenance. For example, the same voltage as the voltage applied to the first power electrode (121a) can be induced in the first ground electrode by the voltage applied to the first power electrode (121a), and the same voltage as the voltage applied to the second power electrode (121b) can be induced in the second ground electrode by the voltage applied to the second power electrode (121b).

[0039] However, in the conventional 4-electrode structure using 2 power electrodes (121a, 121b) and 2 of the above ground electrodes (i.e., 2 pairs of the above power electrodes and the above ground electrodes), even if the same voltage is applied as in the 3-electrode structure, the flowing current is lowered, so the plasma density is relatively lowered compared to the 3-electrode structure, and the radical density is lowered, which affects the deposition speed and the uniformity of the deposition film. That is, in the conventional 4-electrode structure, when plasma is generated, the plasma potential (V p ) and the ground (potential) is large, so the current is low, and the phenomenon of the plasma density being low occurs, which lowers the radical density.

[0040] In order to solve these problems, the batch substrate processing device (100) according to the present invention uses a floating electrode (122) instead of the ground electrode as an electrode that operates with the power electrode (121), so that the first and second power electrodes (121a, 121b) and the first and second floating electrodes (122a, 122b) have a four-electrode structure, so that when plasma is generated, the plasma potential (V p ) and floating potential (V f ) can be minimized, thereby allowing a relatively larger current to flow, improving the plasma density and obtaining an increase in radical density.

[0041] In addition, in the case of a three-electrode structure, interference may occur between the three electrodes, but in the case of the four-electrode structure of the present invention, the first power electrode (121a) and the first floating electrode (122a) are paired, and the second power electrode (121b) and the second floating electrode (122b) are paired, so that only the corresponding electrodes in close proximity may act, and the non-corresponding electrodes in far distance may be hardly affected, and the influence of interference between the non-corresponding power electrodes (121a, 121b) and the floating electrodes (122b, 122a) may be almost absent. For reference, in terms of the principles of electromagnetic fields and electric circuits, the floating potential (V) of the two floating electrodes (122a, 122b) f ) are the same, the power electrode (121) acts on the nearest floating electrode (122).

[0042] For example, a plurality of electrodes (121, 122) may be arranged in a discharge space (125) separated from a processing space (111) by a partition wall (115), and a plasma forming unit (120) may be formed by the plurality of electrodes (121, 122) and the partition wall (115), and the batch-type substrate processing device (100) of the present invention may include a plasma forming unit (120). The plasma forming unit (120) may form plasma using a plurality of electrodes (121, 122), and may decompose process gas supplied from a gas supply pipe (170) by plasma and provide it to the processing space (111) in the reaction tube (110). Here, the plasma forming unit (120) may have a discharge space (125) that is separated from the processing space (111) by a partition wall (115) extending along the longitudinal direction of the reaction tube (110), and plasma may be formed in the discharge space (125) by a plurality of electrodes (121, 122) that extend along the longitudinal direction of the reaction tube (110) and are arranged in the circumferential direction of the reaction tube (110).

[0043] The discharge space (125) of the plasma forming unit (120) is a space where plasma is formed, and can be separated from the processing space (111) by a partition wall (115). Accordingly, the plasma forming unit (120) can decompose the process gas supplied from the gas supply pipe (170) using plasma in the discharge space (125), and provide only radicals among the decomposed process gas to the processing space (111).

[0044] Here, the partition wall (115) may extend along the length of the reaction tube (110), may be arranged inside the reaction tube (110), or may be arranged outside the reaction tube (110). For example, the partition wall (115) may be arranged inside the reaction tube (110) as shown in FIG. 1 to form an inner wall of the reaction tube (110) and a discharge space (125), and may include a plurality of sub-side wall portions (115a, 115b) connected to the inner wall (or inner surface) of the reaction tube (110) and a main side wall portion (115c) between the plurality of sub-side wall portions (115a, 115b). A plurality of sub-side wall portions (115a, 115b) may protrude (or extend) from the inner wall of the reaction tube (110) into the inner side of the reaction tube (110), may be arranged spaced apart from each other in the circumferential direction of the reaction tube (110), and may be symmetrical with respect to the main side wall portion (115c). In addition, the main side wall portion (115c) may be spaced apart from the inner wall of the reaction tube (110) and may extend in the circumferential direction of the reaction tube (110), and may be arranged between the plurality of sub-side wall portions (115a, 115b) to connect the plurality of sub-side wall portions (115a, 115b). At this time, both the plurality of sub-side wall portions (115a, 115b) and the main side wall portion (115c) may extend in the longitudinal direction of the reaction tube (110) along the inner wall of the reaction tube (110). However, the bulkhead (115) may be of various shapes and is not limited to that shown in FIG. 1, as long as it can provide a discharge space (125) separated from the processing space (111).

[0045] In another embodiment, the partition wall (115) may be arranged on the outside of the reaction tube (110) to form the outer wall of the reaction tube (110) and the discharge space (125), and may include a plurality of sub-side wall portions (115a, 115b) connected to the outer surface (or outer wall) of the reaction tube (110) and a main side wall portion (115c) between the plurality of sub-side wall portions (115a, 115b). The plurality of sub-side wall portions (115a, 115b) may protrude from the outer wall of the reaction tube (110) to the outside of the reaction tube (110), may be arranged spaced apart from each other in the circumferential direction of the reaction tube (110), and may be symmetrical with the main side wall portion (115c) as the center. And the main side wall portion (115c) can be spaced apart from the outer wall of the reaction tube (110) and can extend in the circumferential direction of the reaction tube (110), and can be arranged between a plurality of sub-side wall portions (115a, 115b) to connect the plurality of sub-side wall portions (115a, 115b).

[0046] Meanwhile, the main side wall portion (115c) may be configured in a tube shape having a diameter smaller or larger than that of the reaction tube (110), thereby forming a discharge space (125) between the side wall of the reaction tube (110) and the main side wall portion (115c) (i.e., between the inner wall of the reaction tube and the main side wall portion or between the outer wall of the reaction tube and the main side wall portion).

[0047] The plasma forming unit (120) forms plasma in the discharge space separated from the processing space (111) by the partition wall (115), so that the process gas supplied from the gas supply pipe (170) is not directly supplied into the interior of the reaction tube (110) and decomposed in the processing space (111), but is decomposed in the discharge space (125), which is a space separated from the processing space (111), and then supplied to the processing space (111). The inner wall of the processing space (111) may be heated not only to the substrate (10) but also to the inner wall (or internal wall surface) of the processing space (111) by a hot wall type heating means (or heater) surrounding the processing space (111), and as the process gas is deposited, an unwanted thin film may be formed. The thin film formed (or deposited) on the inner wall of the processing space (111) may fall off as particles due to an electric field or magnetic field caused by plasma, and may act as a contaminant during the processing process for the substrate (10). Accordingly, the plasma forming unit (120) forms plasma in a discharge space (125) separated from the processing space (111) by a partition wall (115), thereby directly supplying the process gas to the processing space (111) to form plasma in the processing space (111), thereby preventing the problem of the thin film formed on the inner wall of the processing space (111) falling off as particles due to an electric field or magnetic field caused by plasma.

[0048] The batch substrate processing device (100) according to the present invention may further include a capacitor (126) having one side connected to at least one (122a or 122b) of the first and second floating electrodes (122a, 122b) and the other side grounded.

[0049] The capacitor (126) can have one side connected to at least one (122a or 122b) of the first and second floating electrodes (122a, 122b), and the other side can be grounded, and can float the connected first floating electrode (122a) and / or second floating electrode (122b). That is, instead of directly (or directly) grounding the first floating electrode (122a) and / or the second floating electrode (122b), it can be electrically connected to the ground through the capacitor (126), and through this, the potential of the connected first floating electrode (122a) and / or second floating electrode (122b) is not grounded (potential), but is a floating potential (V f ) can be made (or increased) and the plasma potential (V p ) can be reduced compared to the ground (potential). For example, the first and second floating electrodes (122a, 122b) may be connected to one side of one capacitor (126), or may be connected to one side of each of two capacitors (126), and the capacitors (126) may include fixed or variable capacitors. Here, the two capacitors (126) may have the same capacitance.

[0050] In addition, by providing a capacitor (126) between the floating electrode (122) and the ground to float the floating electrode (122), the overall impedance (Impednace, Z) of the plasma forming unit (120) can be lowered to implement an optimized low impedance (Z), and accordingly, a relatively large amount of current can flow to the plurality of electrodes (121, 122) even with a low applied voltage. Through this, the process time can be shortened by utilizing high plasma density and radicals, and at the same time, the applied voltage can be lowered, thereby reducing the sputtering effect and maximizing the lifespan of the plurality of electrodes (121, 122).

[0051] That is, when a high-frequency power is applied to two pairs of rod-shaped (or bar-shaped) electrodes to form a capacitively coupled plasma (CCP), inductively coupled plasma (ICP) characteristics are expressed, LC resonance can occur, and the higher the frequency used, the greater the inductive coupling effect becomes. To prevent this, in the present invention, a capacitor (126) can be mounted on the lower portion of the floating electrode (122) to provide electrostatic capacitance, thereby avoiding LC resonance (region).

[0052] At this time, both the first and second floating electrodes (122a, 122b) can be connected to one side of the capacitor (126), and can be connected to the same capacitor (126). Through this, even if they are not (directly) grounded, the floating potential (V) of the first and second floating electrodes (122a, 122b) f ) can be the same, and accordingly, interference between the first floating electrode (122a) and the second floating electrode (122b) can be prevented depending on the potential difference between the first floating electrode (122a) and the second floating electrode (122b). Accordingly, the first power electrode (121a) and the first floating electrode (122a) are paired, and the second power electrode (121b) and the second floating electrode (122b) are paired, so that only the corresponding electrodes in close proximity can act while (almost) not affecting the non-corresponding electrodes in far distance, and the influence of interference between the non-corresponding power electrodes (121a, 121b) and the floating electrodes (122b, 122a) can be (almost) absent.

[0053] That is, when two capacitors (126) are used, even if capacitors (126) having the same electrostatic capacitance are used, there is a slight error (or difference) between the two capacitors (126), so the floating potential (V) of the first floating electrode (122a) f ) and the floating potential (V) of the second floating electrode (122b) f ) may have a potential difference (or difference) between them. However, when both the first and second floating electrodes (122a, 122b) are floated on one side of the same capacitor (126), the floating potential (V) of the first and second floating electrodes (122a, 122b) f ) can be the same, and the floating potential (V) of the first floating electrode (122a) f ) and the floating potential (V) of the second floating electrode (122b) f ) so that no potential difference occurs between the first floating electrode (122a) and the second floating electrode (122b), and thus no interference may occur between them.

[0054] Here, the electrostatic capacitance of the capacitor (126) may be 0.1 to 1,000 pF or less.

[0055] Recently, the overall size of a batch-type substrate processing device (100) such as a reaction tube (110) has become smaller, so it is difficult to install a capacitor (126) at the lower end of a floating electrode (122) without increasing the size compared to a conventional batch-type substrate processing device that used a ground electrode in which the electrode is directly grounded, and a small size is required for easy configuration and assembly.

[0056] When the electrostatic capacitance of the capacitor (126) exceeds 1,000 pF, the size of the capacitor (126) increases, making it difficult to install the capacitor (126) at the lower end of the floating electrode (122), and the inductive reactance (X L Capacitive reactance (X) that cancels out ≡ ωL C≡ 1 / ωC) becomes too small, so the overall impedance of the plasma forming part (120) (Z = R + i(X L - X C )) becomes insignificant. On the other hand, when the electrostatic capacitance of the capacitor (126) becomes smaller than 0.1 pF, the capacitive reactance (X C ) increases too much, which rather increases the overall impedance (Z) of the plasma forming unit (120). In addition, when the electrostatic capacitance of the capacitor (126) is smaller than 0.1 pF, the size of the capacitor (126) is too small, making it difficult to connect the first and second floating electrodes (122a, 122b) having relatively large sizes, and it is even more difficult to connect both the first and second floating electrodes (122a, 122b) to one side of the capacitor (126).

[0057] Accordingly, by setting the electrostatic capacitance of the capacitor (126) to 0.1 to 1,000 pF or less, the overall impedance (Z) of the plasma forming unit (120) can be lowered to implement an optimized low impedance (Z).

[0058] Here, the plurality of electrodes (121, 122) may be arranged to be biased toward one side of the reaction tube (110), and may be arranged only on one side (or one side) of the two sides (or one side and the other side) when the circumference of the reaction tube (110) is divided into two sides with the reaction tube (110) as the center. For example, the reaction tube (110) may include an exhaust port (112) for exhausting the processing space (111), and the plurality of electrodes (121, 122) may be arranged on the opposite side of the exhaust port (112). The exhaust port (112) may exhaust the processing space (111) and may serve to exhaust process residues within the processing space (111). At this time, the batch-type substrate processing device (100) of the present invention may further include an exhaust unit (not shown) connected to an exhaust port (112) and communicating with a reaction tube (110) to exhaust process residues within the processing space (111) to the outside.

[0059] An exhaust unit (not shown) may be connected to an exhaust port (112) and communicated with a processing space (111), and process residues within the processing space (111) may be exhausted (or discharged) to the outside through the exhaust port (112). For example, the exhaust unit (not shown) may include an exhaust line (not shown) connected to the exhaust port (112) and an exhaust pump (not shown) connected to the exhaust line (not shown) to provide a vacuum force (or vacuum pressure), so that after the process gas is supplied to the plurality of substrates (10) after being decomposed in the plasma forming unit (120), the process residues that react with the substrates (10) and remain can be sucked into the exhaust port (112) by a vacuum force from the exhaust pump (not shown) and discharged (or exhausted) through the exhaust line (not shown).

[0060] Here, the exhaust port (112) may be arranged to face the plasma forming unit (120), and a plurality of electrodes (121, 122) may be arranged on the opposite side of the exhaust port (112). When the radical(s) sprayed from the plurality of injection holes of the plasma forming unit (120) to the plurality of substrates (10) flow into the exhaust port (112) on the opposite side, a laminar flow may be formed. That is, the radical(s) sprayed from the injection holes may flow in a direction parallel to the surface of the substrate (10), so that they may be uniformly supplied to the upper surface of the substrate (10), and after the radical(s) sprayed from the injection holes come into contact with the surface of the substrate (10), they may move along the substrate (10) and flow into the exhaust port (112).

[0061] The batch-type substrate processing device (100) according to the present invention may further include a high-frequency power supply unit (150) that supplies high-frequency power to the first and second power electrodes (121a, 121b).

[0062] The high-frequency power supply (150) can supply high-frequency power, and the supplied high-frequency power can be applied (or supplied) to the first and second power electrodes (121a, 121b). When the high-frequency power (or electric power) is applied to the first and second power electrodes (121a, 121b), an electric field (or magnetic field) can be generated between the power electrode (121) and the floating electrode (122), and a capacitively coupled plasma (CCP) can be generated by the electric field thus generated.

[0063] In the case where high-frequency power is applied to the first and second power electrodes (121a, 121b) respectively (for example, a four-electrode structure in which two floating electrodes are positioned between the two power electrodes), the high-frequency power can be supplied separately to the first and second power electrodes (121a, 121b), so that the power required to form (or generate) plasma or the power to obtain a desired amount of radicals can be reduced, and the generation of particles can be reduced or prevented compared to the case where high-frequency power (or power) is applied to one power electrode (121). In addition, since plasma can be formed in a larger (or wider) space (or area) than when plasma is formed with one power electrode (121) and one floating electrode (122), the process gas can be decomposed more effectively.

[0064] For example, the high-frequency power supply unit (150) can apply high-frequency power having a frequency selected from the range of 4 to 40 MHz to each of the first and second power electrodes (121a, 121b). If the frequency of the high-frequency power supply exceeds 40 MHz, even in the case of a four-electrode structure having two power electrodes (121), the imaginary part (Zn′) of the overall impedance (Zn) becomes too low, causing a problem in igniting the plasma. On the other hand, if the frequency of the high-frequency power supply becomes smaller than 4 MHz, the imaginary part (Zn′) of the overall impedance (Zn) becomes too large, so that even if the number of power electrodes (121) increases, the minimum imaginary part (Zn′) of the overall impedance (Zn) cannot be achieved. That is, the circumference (length) of the reaction tube (110) is determined according to the size (or circumference) of the substrate (10), and the maximum number of power electrodes (121) is determined according to the circumference of the reaction tube (110). However, even if the imaginary part (Zn′) of the overall impedance (Zn) is reduced by increasing the number of power electrodes (121) due to the limit of how much the number of power electrodes (121) can be increased, the imaginary part (Zn′) of the overall impedance (Zn) cannot be reduced to the minimum.

[0065] Accordingly, the high-frequency power supply unit (150) can apply high-frequency power having a frequency selected from the range of 4 to 40 MHz to each of the first and second power electrodes (121a, 121b). In addition, as the number of power electrodes (121) increases, the plasma generation space increases, and therefore, in order to ensure plasma uniformity within the discharge space (125), the same (or a certain level) plasma density must be provided to all of the plasma generation spaces. To this end, high-frequency power having the same (or an error range of ±10%) frequency can be applied to each of the first and second power electrodes (121a, 121b).

[0066] For example, in the case of a four-electrode structure in which the first and second floating electrodes (122a, 122b) are positioned between the first and second power electrodes (121a, 121b), a high-frequency power source having a frequency of about 27 MHz (or 27.12 MHz) can be applied to each of the first and second power electrodes (121a, 121b).

[0067] FIG. 2 is a conceptual diagram for explaining a power distribution unit according to an embodiment of the present invention. FIG. 2 (a) shows a case where high-frequency power is supplied to the first and second power electrodes, respectively, using one variable capacitor and one fixed capacitor. FIG. 2 (b) shows a case where high-frequency power is supplied to the first and second power electrodes, respectively, using one variable capacitor. FIG. 2 (c) shows a case where high-frequency power is supplied to the first and second power electrodes, respectively, using a plurality of variable capacitors.

[0068] Referring to FIGS. 1 and 2, the batch-type substrate processing device (100) according to the present invention may further include a power distribution unit (155) provided between a high-frequency power supply unit (150) and the first and second power electrodes (121a, 121b), and distributing the high-frequency power supplied from the high-frequency power supply unit (150) and providing it to the first power electrode (121a) and the second power electrode (121b), respectively.

[0069] The power distribution unit (155) may be provided between the high-frequency power supply unit (150) and the first and second power electrodes (121a, 121b), and may distribute the high-frequency power supplied from the high-frequency power supply unit (150) and provide it to the first power electrode (121a) and the second power electrode (121b), respectively. Here, the power distribution unit (155) may be a power splitter, and may be provided between the high-frequency power supply unit (150) and the first and second power electrodes (121a, 121b), and may distribute the high-frequency power supplied (or output) from the high-frequency power supply unit (150), and the distributed high-frequency power may be provided to each of the first and second power electrodes (121a, 121b). In this case, by applying the same power (or voltage) to each of the first and second power electrodes (121a, 121b), a uniform plasma can be formed in the space between the first power electrode (121a) and the first floating electrode (122a) and the space between the second power electrode (121b) and the second floating electrode (122b).

[0070] Although high-frequency power may be applied to each of the first and second power electrodes (121a, 121b) through a plurality of high-frequency power sources (150), different power sources may be applied to each of the first and second power electrodes (121a, 121b) due to a difference in performance between the plurality of high-frequency power sources (150), and accordingly, non-uniform plasmas having different plasma densities may be formed in the space between the first power electrode (121a) and the first floating electrode (122a) and in the space between the second power electrode (121b) and the second floating electrode (122b). In addition, when high-frequency power is applied to each of the first and second power electrodes (121a, 121b) through a plurality of high-frequency power sources (150) to discharge plasma, the high-frequency power is concentrated entirely on the side where plasma is formed due to low impedance, so plasma cannot be generated in a balanced manner in the space between the first power electrode (121a) and the first floating electrode (122a) and the space between the second power electrode (121b) and the second floating electrode (122b), and electrical damage easily occurs to the power electrode (121) and the floating electrode (122) that generate the plasma.

[0071] However, if the high-frequency power supplied from one high-frequency power source (150) is distributed through a power distribution unit (155) and provided to each of the first and second power electrodes (121a, 121b), the same power can be applied to the first and second power electrodes (121a, 121b), and a uniform plasma can be formed in the space between the first power electrode (121a) and the first floating electrode (122a) and the space between the second power electrode (121b) and the second floating electrode (122b).

[0072] Meanwhile, the formation of plasma may become non-uniform in the space between the first power electrode (121a) and the first floating electrode (122a) and in the space between the second power electrode (121b) and the second floating electrode (122b) due to various (external) factors, and the plasma density formed in the space between the first power electrode (121a) and the first floating electrode (122a) and in the space between the second power electrode (121b) and the second floating electrode (122b) may become non-uniform. In particular, when at least one of the first and second power electrodes (121a, 121b) is disposed outside the partition wall (115), the partition wall (115) may be positioned in the space between the first power electrode (121a) and the first floating electrode (122a) and / or the space between the second power electrode (121b) and the second floating electrode (122b), so that the unevenness of the plasma density may be further aggravated between the space between the first power electrode (121a) and the first floating electrode (122a) and the space between the second power electrode (121b) and the second floating electrode (122b) due to interference by the partition wall (115). In this case, the size or ratio of the high-frequency power (or power) provided to each of the first and second power electrodes (121a, 121b) through the power distribution unit (155) can be adjusted to provide the power to each of the first and second power electrodes (121a, 121b). Through this, it is possible to form a uniform plasma in the space between the first power electrode (121a) and the first floating electrode (122a) and in the space between the second power electrode (121b) and the second floating electrode (122b).

[0073] And, in the case where the plasma densities formed in the space between the first power electrode (121a) and the first floating electrode (122a) and the space between the second power electrode (121b) and the second floating electrode (122b) are not non-uniform (or uniform), the high-frequency power output from one high-frequency power source (150) may be evenly distributed and supplied to each of the first and second power electrodes (121a, 121b). Here, the high-frequency power source (150) may supply RF power in the form of pulses to the first and second power electrodes (121a, 121b), and may supply the power by adjusting the width and duty ratio of the pulse.

[0074] Here, the power distribution unit (155) may include a distribution point (155b) through which the high-frequency power (150) is distributed to the first power electrode (121a) and the second power electrode (121b) and a variable capacitor (155a) provided between at least one (121a or 121b) of the first and second power electrodes (121a, 121b). The variable capacitor (155a) may be provided between the distribution point (155b) through which the high-frequency power (150) is distributed to the first power electrode (121a) and the second power electrode (121b) and at least one (121a or 121b) of the first and second power electrodes (121a, 121b), and may adjust the size or ratio of the high-frequency power supplied from the high-frequency power (150) by changing the electrostatic capacitance (or storage capacitance).

[0075] For example, a variable capacitor (155a) may be provided in the power distribution unit (155) as in (a) and (b) of FIG. 2. In one embodiment, as in (a) of FIG. 2, a fixed capacitor (155c) may be provided between the distribution point (155b) and one of the first and second power electrodes (121a, 121b) and a variable capacitor (155a) may be provided between the distribution point (155b) and the other of the first and second power electrodes (121a, 121b) and a power electrode (121b or 121a). Through this, the plasma density formed in the space between the other power electrode (121b or 121a) and the floating electrode (122b or 122a) can be adjusted by controlling the variable capacitor (155a) according to the plasma density formed in the space between the other power electrode (121b or 121a) and the floating electrode (122b or 122a). At this time, the plasma density formed in the space between the other power electrode (121b or 121a) and the floating electrode (122b or 122a) can be adjusted to be the same as the plasma density formed in the space between the one power electrode (121a or 121b) and the floating electrode (122a or 122b).

[0076] In another embodiment, as in (b) of FIG. 2, a variable capacitor (155a) may be provided only between the distribution point (155b) and the other power electrode (121b or 121a) among the first and second power electrodes (121a, 121b). In this way, the variable capacitor (155a) can be adjusted according to the plasma density formed in the space between the distribution point (155b) and the other power electrode (121a or 121b) among the first and second power electrodes (121a, 121b) and the floating electrode (122a or 122b), thereby adjusting the plasma density formed in the space between the other power electrode (121b or 121a) and the floating electrode (122b or 122a). At this time, the plasma density formed in the space between the other power electrode (121b or 121a) and the floating electrode (122b or 122a) can be adjusted to be the same as the plasma density formed in the space between the one power electrode (121a or 121b) and the floating electrode (122a or 122b).

[0077] Meanwhile, the variable capacitors (155a) may be configured in plurality as shown in (c) of FIG. 2, and may be respectively arranged to correspond to the first power electrode (121a) and the second power electrode (121b), and the plurality of variable capacitors (155a) may be respectively connected (or provided) between the first and second power electrodes (121a, 121b) and a distribution point (155b) to which the high-frequency power supplied from the high-frequency power source (150) is distributed. Here, the plurality of variable capacitors (155a) may adjust the size or ratio of the high-frequency power supplied from the electrically connected high-frequency power source (150).

[0078] In the present invention, a variable capacitor (155a) is installed at the rear end (or after) of a distribution point (155b) and provided between the distribution point (155b) and at least one (121a or 121b) of the first and second power electrodes (121a, 121b), thereby controlling (or adjusting) the plasma density of the space between the first power electrode (121a) and the first floating electrode (122a) and the space between the second power electrode (121b) and the second floating electrode (122b).

[0079] The batch substrate processing device (100) according to the present invention may further include a control unit (160) that selectively controls the high-frequency power applied to each of the first and second power electrodes (121a, 121b).

[0080] The control unit (160) can selectively control the high-frequency power applied to each of the first and second power electrodes (121a, 121b), and can selectively control the high-frequency power applied to each of the first and second power electrodes (121a, 121b) according to the plasma state such as discharge current, discharge voltage, and phase. At this time, the control unit (160) is connected to the power distribution unit (155) and can control the variable capacitor (155a), thereby controlling the size or ratio of the high-frequency power applied to each of the first and second power electrodes (121a, 121b).

[0081] For example, the batch substrate processing device (100) of the present invention may further include a plasma measuring unit (not shown) that measures the plasma density of a space between a first power electrode (121a) and a first floating electrode (122a) and a space between a second power electrode (121b) and a second floating electrode (122b), and the control unit (160) may adjust the high-frequency power applied to each of the first and second power electrodes (121a, 121b) according to the plasma density measured by the plasma measuring unit (not shown).

[0082] The plasma measurement unit (not shown) can measure the plasma density (respectively) of the space between the first power electrode (121a) and the first floating electrode (122a) and the space between the second power electrode (121b) and the second floating electrode (122b), and can measure the plasma density by measuring discharge characteristic values ​​such as discharge current, discharge voltage, and phase. For example, the plasma measuring unit (not shown) may include a probe rod, and the probe rod may be provided in a space between the first power electrode (121a) and the first floating electrode (122a) and a space between the second power electrode (121b) and the second floating electrode (122b), respectively, so that discharge characteristic values ​​of plasma formed in the space between the first power electrode (121a) and the first floating electrode (122a) and the space between the second power electrode (121b) and the second floating electrode (122b) can be measured from the probe rod, thereby measuring (or measuring) the plasma density.

[0083] The control unit (160) can receive the plasma density measured by the plasma measurement unit (not shown) and adjust the high-frequency power applied to each of the first and second power electrodes (121a, 121b) according to the measured plasma density, and can be connected to the power distribution unit (155) and can adjust the size or ratio of the high-frequency power applied to each of the first and second power electrodes (121a, 121b) by adjusting the variable capacitor (155a). For example, the probe rods may be provided in the space between the first power electrode (121a) and the first floating electrode (122a) and in the space between the second power electrode (121b) and the second floating electrode (122b) so as to adjust the size or ratio of the high-frequency power through the variable capacitor (155a), and the discharge characteristic values ​​(e.g., discharge current, discharge voltage, phase, etc.) and / or plasma density of the plasma formed in the space between the first power electrode (121a) and the first floating electrode (122a) and in the space between the second power electrode (121b) and the second floating electrode (122b) may be measured from the probe rods, thereby adjusting the size or ratio of the high-frequency power applied to each of the first and second power electrodes (121a, 121b).

[0084] In the present invention, the size or ratio of high-frequency power applied to each of the first and second power electrodes (121a, 121b) can be controlled to uniformly and variably adjust the deposition of radicals required for the substrate (10) processing process, thereby solving the problem of uneven plasma density distribution.

[0085] Accordingly, by distributing the high-frequency power supplied from one high-frequency power source (150) through the power distribution unit (155) at a constant ratio and providing it to the first and second power electrodes (121a, 121b), it is possible to form a uniform plasma in the space between the first power electrode (121a) and the first floating electrode (122a) and in the space between the second power electrode (121b) and the second floating electrode (122b).

[0086] The batch-type substrate processing device (100) of the present invention may further include a gas supply pipe (170) for supplying a process gas required for a process of processing a plurality of substrates (10).

[0087] The gas supply pipe (170) can supply the process gas required for the process of processing a plurality of substrates (10), and can supply the process gas into the reaction tube (110) through the plasma forming unit (120), and can include a discharge port (171) for discharging (or spraying) the process gas into the discharge space (125). At this time, the plasma forming unit (120) can include a plurality of injection ports arranged in the longitudinal direction of the reaction tube (110) to supply radicals among the process gas decomposed by the plasma to the processing space (111). For example, the plurality of injection ports can be formed in the partition wall (115) and can supply the radicals to the processing space (111).

[0088] Here, the gas supply pipes (170) may be configured in multiple numbers and may be symmetrically arranged on both sides of the radial direction (CC′) extending from the central axis (C) of the reaction tube (110) to the center of the discharge space (125). At this time, the pair of the first power electrode (121a) and the first floating electrode (122a) and the pair of the second power electrode (121b) and the second floating electrode (122b) may also be symmetrically arranged on both sides of the radial direction (CC′) extending to the center of the discharge space (125). When the multiple gas supply pipes (170) are symmetrically arranged around the radial direction (CC′) extending to the center of the discharge space (125), the process gas can be uniformly supplied to the spaces (or areas) on both sides of the discharge space (125), and the process gas can be effectively diffused within the discharge space (125). In addition, since the pair of the first power electrode (121a) and the first floating electrode (122a) and the pair of the second power electrode (121b) and the second floating electrode (122b) are symmetrically arranged on both sides in the radial direction (CC′) extending to the center of the discharge space (125), the process gas can be uniformly supplied to the space between the first power electrode (121a) and the first floating electrode (122a) and the space between the second power electrode (121b) and the second floating electrode (122b), the plasma uniformity of the space on both sides of the discharge space (125) can be improved, and the amount of radicals supplied (or passed) between the plurality of injection holes formed in the plasma forming unit (120) and supplying radicals to the processing space (111) can be uniform.

[0089] Here, the process gas may include one or more gases, and may include a source gas and a reaction gas that reacts with the source gas to form a thin film material. For example, when the thin film material to be deposited on the substrate (10) is silicon nitride, the source gas may include a gas containing silicon, such as dichlorosilane (SiH2Cl2, abbreviated as DCS), and the reaction gas may include a gas containing nitrogen, such as NH3, N2O, or NO.

[0090] Meanwhile, the batch-type substrate processing device (100) of the present invention may further include a heating means (not shown) surrounding the reaction tube (110) to heat a plurality of substrates (10). In addition, the substrate boat may be rotated by a rotation means connected to the lower portion of the substrate boat to ensure uniformity of the processing process, and the process gas decomposed by the plasma may be the reaction gas, and the source gas may be directly supplied to the processing space (111) through a separate source gas supply pipe (175).

[0091] And the RF power can be supplied as RF power in the form of a pulse. The pulse-shaped RF power can have a pulse width and a duty ratio that can be adjusted in a pulse frequency range of 4 to 40 MHz (or 1 kHz to 10 kHz). The duty ratio refers to the ratio of the on cycle and the off cycle. When the pulse-shaped RF power is applied to the first and second power electrodes (121a, 121b), the plasma can be periodically turned on / off, and the plasma can be generated in the form of a pulse, thereby reducing the density of ions that damage the first and second power electrodes (121a, 121b), the first and second floating electrodes (122a, 122b), and the partition wall (115) and generate particles during the processing, while maintaining the density of radicals constant. Accordingly, while maintaining the efficiency of the processing process, it is possible to reduce or prevent damage to the first and second power electrodes (121a, 121b), the first and second floating electrodes (122a, 122b), and the partition wall (115) and the generation of particles by the plasma.

[0092] FIG. 3 is a conceptual diagram for explaining an electrode protection unit according to an embodiment of the present invention. FIG. 3 (a) shows a case where the first and second power electrodes are respectively arranged on both sides of the first and second floating electrodes, and FIG. 3 (b) shows a case where the first and second floating electrodes are respectively arranged on both sides of the first and second power electrodes.

[0093] Referring to FIGS. 1 and 3, the batch-type substrate processing device (100) according to the present invention may further include an electrode protection unit (130) that protects a plurality of electrodes (121, 122). The electrode protection unit (130) may protect the plurality of electrodes (121, 122), and may wrap at least a portion of each of the plurality of electrodes (121, 122) to protect each of the plurality of electrodes (121, 122). For example, the electrode protection unit (130) may wrap at least a portion of each of the first and second power electrodes (121a, 121b) and the first and second floating electrodes (122a, 122b), and may protect the first and second power electrodes (121a, 121b) and the first and second floating electrodes (122a, 122b), respectively.

[0094] Here, the electrode protection unit (130) may include a plurality of first electrode protection tubes (131) that surround the first power electrode (121a) and the second power electrode (121b), respectively; a plurality of second electrode protection tubes (132) that surround the first floating electrode (122a) and the second floating electrode (122b), respectively; and a bridge portion (133) that connects the first electrode protection tubes (131) and the second electrode protection tubes (132) that face each other. The plurality of first electrode protection tubes (131) may be provided to the first and second power electrodes (121a, 121b), may surround the outer peripheral surfaces of the first and second power electrodes (121a, 121b), and may protect the first power electrode (121a) and the second power electrode (121b), respectively. Here, the plurality of first electrode protection tubes (131) can have an upper end that is closed and a lower end that is open, and have an internal space into which the first and second power electrodes (121a, 121b) can be inserted, respectively, so that the first and second power electrodes (121a, 121b) can be inserted upward through the open portion at the lower end, and the first and second power electrodes (121a, 121b) can be protected, respectively.

[0095] A plurality of second electrode protection tubes (132) may be provided for the first and second floating electrodes (122a, 122b), respectively, and may surround the outer peripheral surfaces of the first and second floating electrodes (122a, 122b), respectively, and may protect the first floating electrode (122a) and the second floating electrode (122b), respectively. Here, the plurality of second electrode protection tubes (132) may have an upper end that is closed and a lower end that is open, and may have an internal space into which the first and second floating electrodes (122a, 122b) may be inserted, respectively, so that the first and second floating electrodes (122a, 122b) may be inserted upward through the open portion at the lower end, respectively, and may protect the first and second floating electrodes (122a, 122b), respectively.

[0096] For example, the first and second power electrodes (121a, 121b) and the first and second floating electrodes (122a, 122b) may be protected by being wrapped from top to bottom by a first electrode protection tube (131) and / or a second electrode protection tube (132), and the first and second power electrodes (121a, 121b) and the first and second floating electrodes (122a, 122b) may be formed of a flexible braided wire.

[0097] In general, electrical conduction due to the use of high-frequency power may cause a skin effect in which current flows along the surface (or may be affected by the depth of penetration of the metal (skin depth) in which current flows), and when a mesh-type mesh electrode is used for the first and second power electrodes (121a, 121b) and the first and second floating electrodes (122a, 122b), the area occupied by the empty space is large, so there is a problem of inefficiency in supplying high-frequency power due to large resistance caused by the small surface area. Moreover, the treatment process for the substrate (10) is repeatedly performed at high and low temperatures, and when the first and second power electrodes (121a, 121b) and the first and second floating electrodes (122a, 122b) are formed in a mesh type, the shape of the mesh electrode changes irregularly depending on the changing temperature, which is disadvantageous in terms of maintaining the shape, and since the resistance changes depending on the changing shape, there is a problem in that an uneven plasma is generated when high-frequency power is supplied.

[0098] To prevent these problems, the first and second power electrodes (121a, 121b) and the first and second floating electrodes (122a, 122b) may be formed as a flexible braided type (braided wire) by not only being inserted into the first electrode protection tube (131) and / or the second electrode protection tube (132) but also minimizing empty space. For example, a method of coating metal on the surface of each electrode may be additionally used to further reduce empty space. In addition, in order to maintain the flexible braided type first and second power electrodes (121a, 121b) and the first and second floating electrodes (122a, 122b) in a fixed state while extending in the longitudinal direction of the reaction tube (110) inside the discharge space (125), a spring part (not shown) may be further included to fix and support both ends of the first and second power electrodes (121a, 121b) and the first and second floating electrodes (122a, 122b) so that they do not move, and by the spring part, the flexible first and second power electrodes (121a, 121b) and the first and second floating electrodes (122a, 122b) can be fixed in the longitudinal direction of the reaction tube (110) and maintained in a thin and elongated rod shape.

[0099] The first electrode protection tube (131) and the second electrode protection tube (132) surround the outside of the first and second power electrodes (121a, 121b) and the outside of the first and second floating electrodes (122a, 122b), respectively, thereby electrically insulating the first and second power electrodes (121a, 121b) and the first and second floating electrodes (122a, 122b), respectively, and at the same time protecting the first and second power electrodes (121a, 121b) and the first and second floating electrodes (122a, 122b) exposed to the plasma atmosphere from plasma, and safely protecting the first and second power electrodes (121a, 121b) and the first and second floating electrodes (122a, 122b) from contamination or particles that may be generated by the plasma. At this time, the first electrode protection tube (131) and the second electrode protection tube (132) may be made of a heat-resistant material such as quartz or ceramic, and may be manufactured as an integral part with the reaction tube (110).

[0100] The (plural) bridge sections (133) can connect the first electrode protection tubes (131) and the second electrode protection tubes (132) that are opposed to each other (or facing each other), and are configured in plurality to connect the upper ends of the first electrode protection tubes (131) and the second electrode protection tubes (132) that are opposed to each other (or facing each other), and can maintain the gap between the first electrode protection tubes (131) and the second electrode protection tubes (132). Accordingly, the gap between the power electrodes (121) and the floating electrodes (122) that interact with each other to form plasma can be maintained at a constant level, and the same gap can be provided for each pair (or pair) of corresponding power electrodes (121) and floating electrodes (122). Here, the first electrode protection tube (131) and the second electrode protection tube (132) facing each other interact with each other to form plasma in the space between them, and the power electrode (121) and the floating electrode (122) are respectively inserted into the electrode protection tubes (131, 132), and the power electrode (121) can interact with the closest floating electrode (122) to form plasma in the space between them. In addition, the upper part refers to the upper (or upper) part including the upper end of the upper (or upper) end, and does not refer to only the upper end. That is, the first electrode protection tube (131) and the second electrode protection tube (132) can be divided into the upper part, the middle part, and the lower part, and the lower part refers to the lower (or lower) part including the lower end of the lower (or lower) end, and the middle part refers to the middle part between the upper part and the lower part.

[0101] In order to obtain a uniform plasma density within the discharge space (125), each space between the power electrode (121) and the floating electrode (122) must have the same volume (or area), and it is necessary to form plasma (or plasma potential) of the same intensity in the space between the power electrode (121) and the floating electrode (122) to make the plasma density uniform between the space (or the plasma generation space) between the power electrode (121) and the floating electrode (122). To this end, the first electrode protection tube (131) and the second electrode protection tube (132), which are opposed to each other, may be connected by a bridge portion (133) to maintain the gap between the first electrode protection tube (131) and the second electrode protection tube (132). Accordingly, the gap between the power electrode (121) and the floating electrode (122), which interact with each other to form plasma in the space between them, can be maintained constant, and the same volume can be provided for each space between the power electrode (121) and the floating electrode (122), thereby making the plasma density uniform among a plurality of plasma generation spaces.

[0102] For example, the first electrode protection tube (131) and the second electrode protection tube (132) may be long, and only the lower end (portion) may be supported, in which case the first electrode protection tube (131) and / or the second electrode protection tube (132) may shake or tilt. However, the bridge portion (133) connects the upper end of the first electrode protection tube (131) and the second electrode protection tube (132) to effectively prevent the first electrode protection tube (131) and / or the second electrode protection tube (132) from shaking or tilting. That is, when the bridge portion (133) connects (only) the middle end and / or the lower end, the upper end of the first electrode protection tube (131) and the second electrode protection tube (132), which are not connected to each other, may shake, bend, or tilt. However, in the present invention, the lower ends (parts) of the first electrode protection tube (131) and the second electrode protection tube (132) are supported, and the upper ends of the first electrode protection tube (131) and the second electrode protection tube (132) are connected and fixed through the bridge portion (133), thereby preventing shaking, bending, and / or tilting of the upper ends, and preventing the first electrode protection tube (131) and the second electrode protection tube (132) as a whole from shaking or tilting.

[0103] The first floating electrode (122a) may be spaced apart from the first power electrode (121a), and the second floating electrode (122b) may be spaced apart from the second power electrode (121b). The first floating electrode (122a) may be provided spaced apart from the first power electrode (121a), and the first power electrode (121a) and the first floating electrode (122a) may be spaced apart from each other to provide a plasma generation space. In addition, the second floating electrode (122b) may be provided spaced apart from the second power electrode (121b), and the second power electrode (121b) and the second floating electrode (122b) may be spaced apart from each other to provide a plasma generation space. Through this, the first and second power electrodes (121a, 121b) and the first and second floating electrodes (122a, 122b) can form multiple plasma generation spaces.

[0104] And, the plurality of electrodes (121, 122) can form a capacitively coupled plasma (CCP) in the space between the first power electrode (121a) and the first floating electrode (122a) and the space between the second power electrode (121b) and the second floating electrode (122b), and when high-frequency power is applied to each of the first and second power electrodes (121a, 121b), a capacitively coupled plasma (CCP) can be generated by an electric field generated in the space between the power electrodes (121) and the floating electrodes (122) facing each other (or corresponding to each other).

[0105] Here, unlike the capacitively coupled plasma (CCP) method in which plasma is formed by obtaining energy from electron acceleration caused by an electric field formed in a space between spaced (or separated) power electrodes (121) and floating electrodes (122), the inductively coupled plasma (ICP) method forms plasma from an electric field formed around a magnetic field when a magnetic field formed from a current flowing in antennas connected to each other changes over time. Generally, in the inductively coupled plasma (ICP) method, plasma is generated by E-mode and forms a high-density plasma when converted to H-mode. The inductively coupled plasma (ICP) method is divided into E-mode and H-mode depending on the plasma density or applied power. In order to achieve mode conversion from E-mode with low plasma density to H-mode with high density where plasma is maintained, high power must be induced. As the input power increases, a large number of radicals that do not participate in the reaction due to particles and high electron temperature are generated, making it difficult to obtain a high-quality film, and a problem occurs in which it is difficult to generate a uniform plasma depending on the electric field formed by the antenna.

[0106] However, in the present invention, since a capacitively coupled plasma (CCP) is formed in each of the separation spaces (i.e., plasma generation spaces) between the power electrode (121) and the floating electrode (122), there is no need to induce high power to achieve mode conversion as in the case of an inductively coupled plasma (ICP), and thus, it can be more effective in obtaining a high-quality film quality by preventing the generation of particles and generating a large number of radicals participating in the reaction according to the low electron temperature.

[0107] Additionally, the first and second floating electrodes (122a, 122b) may be spaced apart from each other and physically separated. Here, the meaning of 'spaced apart' or 'separated' is that they are not integral, and the distance between them may be very narrow, and it is sufficient if it is greater than 0.

[0108] If the first and second floating electrodes (122a, 122b) arranged between the first and second power electrodes (121a, 121b) are not spaced apart from each other but are attached to each other, the first and second floating electrodes (122a, 122b) may interfere with each other, and the first and second floating electrodes (122a, 122b) may interfere with and act on the non-corresponding power electrodes (121b, 121a). For example, the voltage applied to the first power electrode (121a) and the voltage applied to the second power electrode (121b) may be synthesized at the first floating electrode (122a) and the second floating electrode (122b) (i.e., at the first and second floating electrodes), so that a voltage of nearly twice that may be induced at the first floating electrode (122a) and the second floating electrode (122b). In this case, the plasma potential proportional to the electric field increases due to the high electric field, which may cause plasma damage, and the plasma damage may occur and damage the second electrode protection tube (132), the partition wall (115), the reaction tube (110), etc. around the first and second floating electrodes (122a, 122b) where twice the voltage is induced. Here, in the case of the 4-electrode structure, the total volume of the floating electrodes (122a, 122b) increases compared to the case of the 3-electrode structure, so a lower voltage may be induced to the first and second floating electrodes (122a, 122b) than in the case of the 3-electrode structure.

[0109] However, when the first and second floating electrodes (122a, 122b) are spaced apart from each other, it is possible to suppress or prevent interference between the first and second floating electrodes (122a, 122b), and it is also possible to suppress or prevent interference between the first and second floating electrodes (122a, 122b) and the non-corresponding power electrodes (121b, 121a). That is, since there is no interference between the first and second floating electrodes (122a, 122b) and no interference from the power electrodes (121b, 121a) that do not correspond to the first and second floating electrodes (122a, 122b), the voltage applied to the first power electrode (121a) can induce the same voltage as the voltage applied to the first power electrode (121a) only in the first floating electrode (122a), and the voltage applied to the second power electrode (121b) can induce the same voltage as the voltage applied to the second power electrode (121b) only in the second floating electrode (122b). Accordingly, plasma damage caused by a high electric field due to a high voltage can be completely suppressed or prevented during plasma generation and plasma maintenance.

[0110] At this time, the distance between the first and second floating electrodes (122a, 122b) or the first and second power electrodes (121a, 121b) arranged in the middle may be less than or equal to the distance between the first power electrode (121a) and the first floating electrode (122a) and the distance between the second power electrode (121b) and the second floating electrode (122b). If the distance between the first and second floating electrodes (122a, 122b) or the first and second power electrodes (121a, 121b) arranged in the middle is greater than the distance between the first power electrode (121a) and the first floating electrode (122a) or the distance between the second power electrode (121b) and the second floating electrode (122b), a relatively low plasma density is formed in the space between the first and second floating electrodes (122a, 122b) or the first and second power electrodes (121a, 121b) arranged in the middle, and the plasma density and / or radical density within the discharge space (125) cannot be formed uniformly. As a result, the amount of radicals supplied to each injection port of the plasma forming unit (120) may be different, and uneven processing (or deposition) occurs between the plurality of substrates (10). In addition, due to the structure of the batch-type substrate processing device (100), the width of the discharge space (125) (or the width of the plasma forming section) cannot but be limited. If the distance between the first and second floating electrodes (122a, 122b) or the first and second power electrodes (121a, 121b) arranged in the middle increases, the distance between the power electrode (121), which is the plasma generating space, and the floating electrode (122) is relatively reduced, so that the process gas cannot be effectively decomposed and radicals cannot be effectively obtained.

[0111] Accordingly, the distance between the first and second floating electrodes (122a, 122b) or the first and second power electrodes (121a, 121b) arranged in the middle can be made smaller than or equal to the distance between the power electrode (121) and the floating electrode (122), and interference between the first and second floating electrodes (122a, 122b) or the first and second power electrodes (121a, 121b) arranged in the middle and interference between the non-corresponding power electrodes (121a, 121b) and the first and second floating electrodes (122a, 122b) can be prevented, while effectively decomposing the process gas to effectively obtain radicals, and the plasma density and / or radical density within the discharge space (125) can be uniformly formed. This can prevent uneven processing between multiple substrates (10), thereby improving processing (or deposition) uniformity between multiple substrates (10).

[0112] Accordingly, the batch-type substrate processing device (100) according to the present invention provides first and second floating electrodes (122a, 122b) (spaced apart) between or on both sides of first and second power electrodes (121a, 121b) that are spaced apart from each other, thereby providing each floating electrode (122a, 122b) corresponding to each of the first and second power electrodes (121a, 121b), thereby preventing an electric field twice as large as that induced in the floating electrode (122) due to common use of the floating electrode (122). Accordingly, plasma damage caused by plasma potential that increases in proportion to the electric field can be suppressed or prevented, and the life of the plasma forming unit (120) can be extended. In addition, the sputtering effect can be reduced by lowering the voltage applied using the first and second power electrodes (121a, 121b), and the process time can be shortened by using high plasma density and radicals.

[0113] The bridge portion (133) can connect the first electrode protection tube (131) and the second electrode protection tube (132), and can not only connect the first electrode protection tube (131) and the second electrode protection tube (132) that face each other, but can also connect the first electrode protection tube (131) and the second electrode protection tube (132) that face each other, and can allow gas to flow between the first electrode protection tube (131) and the second electrode protection tube (132) that face each other. Accordingly, the first electrode protection tube (131) and the second electrode protection tube (132) that face each other can be connected and communicated by the bridge portion (133). For example, inside the first electrode protection tube (131) and the second electrode protection tube (132), the inner wall (or inner surface) of the first electrode protection tube (131) and the second electrode protection tube (132) may be spaced apart (or spaced) from the power electrode (121) and the floating electrode (122), respectively (or from the surfaces of the power electrode and the floating electrode), to form a gas path through which gas may flow, and a gas path in the form of a tube may also be formed in the bridge portion (133) to connect the gas path of the first electrode protection tube (131) and the gas path of the second electrode protection tube (132) connected by the bridge portion (133).

[0114] And the batch type substrate processing device (100) according to the present invention may further include a cooling gas supply unit (41) connected to one of the first electrode protection tube (131) and the second electrode protection tube (132) that are connected by the bridge unit (133) to supply cooling gas; and a cooling gas discharge unit (42) connected to the other of the first electrode protection tube (131) and the second electrode protection tube (132) to discharge the cooling gas supplied to one of the electrode protection tubes (131 or 132).

[0115] The cooling gas supply unit (41) can supply cooling gas into the first electrode protection tube (131) and the second electrode protection tube (132) facing each other, and can cool the power electrode (121) and the floating electrode (122) respectively disposed in the first electrode protection tube (131) and the second electrode protection tube (132) facing each other. For example, the cooling gas supply unit (41) can be connected to either the electrode protection tube (131 or 132) of the first electrode protection tube (131) and the second electrode protection tube (132) that are connected by the bridge unit (133) to supply cooling gas. When high-frequency power is supplied to the first and second power electrodes (121a, 121b) to generate plasma, heat may be generated, and the temperature of the first and second power electrodes (121a, 121b) and the first and second floating electrodes (122a, 122b) increases due to the heat generation, thereby increasing the (metal) resistance of the first and second power electrodes (121a, 121b) and the first and second floating electrodes (122a, 122b), and thus the (induced) voltage increases according to the equation of voltage (V) = current (I) × resistance (R), and the energy of ions generated by the plasma may increase, and when ions with high energy strongly collide with the surfaces of a plurality of first electrode protection tubes (131) and / or second electrode protection tubes (132), the plurality of first electrode protection tubes (131) and second electrode protection tubes (132) may be damaged and / or Particles of metal components, etc. contained in the material (or materials) forming the first electrode protection tube (131) and the second electrode protection tube (132), such as quartz, may be generated. The particles generated in this way may act as contaminants within the reaction tube (110) and may cause (metal) contamination problems in the thin film.For example, contaminant particles (or particles) generated during the manufacturing process of semiconductor devices are closely related to the yield of the devices, and in particular, (metal) contaminant particles generated during the thin film process can conduct current and cause current leakage, which not only causes malfunction of the devices but can also have a fatal negative effect on the yield of the product.

[0116] Therefore, in the present invention, by supplying the cooling gas into the plurality of first electrode protection tubes (131) and the plurality of second electrode protection tubes (132) through the cooling gas supply unit (41) to cool the first and second power electrodes (121a, 121b) and the first and second floating electrodes (122a, 122b), the temperature rise of the first and second power electrodes (121a, 121b) and the first and second floating electrodes (122a, 122b) can be prevented or suppressed. Accordingly, the energy of ions generated by plasma can be prevented from increasing, and ion collision on the surface of the plurality of first electrode protection tubes (131) and / or second electrode protection tubes (132) due to the high energy of ions can be prevented, thereby eliminating the influence of (metal) contamination.

[0117] In addition, the substrate (10) processing process can be performed at a high temperature of 600°C or higher, and the first and second power electrodes (121a, 121b) and the first and second floating electrodes (122a, 122b) made of a metal such as nickel (Ni) can be oxidized at a high temperature of 600°C or higher. Accordingly, by supplying the cooling gas as a protective gas into the plurality of first electrode protection tubes (131) and the plurality of second electrode protection tubes (132) through the cooling gas supply unit (41), the oxidation of the first and second power electrodes (121a, 121b) and the first and second floating electrodes (122a, 122b) can be prevented, and the lifespan of the first and second power electrodes (121a, 121b) and the first and second floating electrodes (122a, 122b) can also be improved.

[0118] For example, the cooling gas may be supplied to one of the first electrode protection tubes (131) and the second electrode protection tubes (132) facing each other, and may flow to the other electrode protection tube (132 or 131) via the bridge portion (133) (or through the bridge portion). At this time, the cooling gas may be supplied to both of the pairs of the first electrode protection tubes (131) and the second electrode protection tubes (132) facing each other, and may be supplied to (either) the same electrode protection tube (131 or 132) among the first electrode protection tube (131) and the second electrode protection tube (132), and may be supplied to the first electrode protection tube (131) or may be supplied to the second electrode protection tube (132). Here, the cooling gas supply unit (41) may include a flow meter (not shown) that measures the flow rate (or supply amount) of the cooling gas, and the flow rate of the cooling gas may be measured through the flow meter (not shown) to control the supply amount (or flow rate) of the cooling gas. At this time, the cooling gas supply unit (41) may supply 1.5 ℓ or more of the cooling gas, and may supply the cooling gas at a flow rate of 1.5 slm (Standard Liter per Minute) or more.

[0119] The cooling gas discharge unit (42) can discharge the cooling gas from the first electrode protection tube (131) and the second electrode protection tube (132) facing each other, thereby forming a flow of the cooling gas. For example, the cooling gas supply unit (41) can be connected to one of the first electrode protection tubes (131) and the second electrode protection tubes (132) facing each other, and the cooling gas discharge unit (42) can be connected to the remaining (or other) electrode protection tube (132 or 131) among the first electrode protection tubes (131) and the second electrode protection tubes (132) facing each other to which the cooling gas supply unit (41) is not connected, so as to discharge the cooling gas supplied to one of the electrode protection tubes (131 or 132), and can discharge the cooling gas supplied to one of the electrode protection tubes (131 or 132) and flowing to the remaining electrode protection tubes (132 or 131) through the bridge unit (133).

[0120] In the present invention, a flow path of the cooling gas passing through one of the electrode protection tubes (131 or 132), the bridge portion (133), and the remaining electrode protection tubes (132 or 131) can be formed through the cooling gas supply portion (41), the bridge portion (133), and the cooling gas discharge portion (42), and the cooling gas can effectively flow to the first electrode protection tube (131) and the second electrode protection tube (132) facing each other, thereby effectively cooling the first and second power electrodes (121a, 121b) and the first and second floating electrodes (122a, 122b), and effectively preventing oxidation of the first and second power electrodes (121a, 121b) and the first and second floating electrodes (122a, 122b).

[0121] In the conventional three-electrode structure, when a plurality of first electrode protection tubes (131) and second electrode protection tubes (132) are connected by a bridge portion (133), the flow rate of the cooling gas flowing in each of the plurality of first electrode protection tubes (131) and the flow rate of the cooling gas flowing in the second electrode protection tube (132) are bound to be different, and the flow of the cooling gas may not be smooth due to the different flow rates, and oxidation of the power electrode (121) and the ground electrode may not be effectively prevented. In addition, due to the different flow rates of the cooling gas within the first electrode protection tube (131) and the second electrode protection tube (132), plasma formation may also be affected, and effective decomposition of the process gas may not occur.

[0122] However, in the present invention, since each bridge part (133) connects one first electrode protection tube (131) and one second electrode protection tube (132), by connecting a cooling gas supply part (41) to one of the electrode protection tubes (131 or 132) and connecting a cooling gas discharge part (42) to the other of the electrode protection tubes (132 or 131), the flow of the cooling gas passing through one of the electrode protection tubes (131 or 132), the bridge part (133), and the other of the electrode protection tubes (132 or 131) can be made smooth. Accordingly, oxidation of each of the power electrodes (121) and the floating electrode (122) can be effectively prevented, and since the cooling gas does not affect plasma formation, effective decomposition of the process gas can be achieved.

[0123] Here, the cooling gas supply unit (41) can be connected to two electrode protection tubes (132 or 131) provided in the middle among the plurality of first electrode protection tubes (131) and the plurality of second electrode protection tubes (132), respectively, and the cooling gas discharge unit (42) can be connected to two electrode protection tubes (131 or 132) provided on both sides of the two electrode protection tubes (132 or 131) provided in the middle, respectively. The cooling gas supply unit (41) is connected to two electrode protection tubes (132 or 131) provided in the middle among a plurality of first electrode protection tubes (131) and a plurality of second electrode protection tubes (132), so that the first and second floating electrodes (122a, 122b) or the first and second power electrodes (121a, 121b) are respectively disposed (or inserted) by first supplying the cold cooling gas to each of the two electrode protection tubes (132 or 131) provided in the middle, thereby effectively cooling the first and second floating electrodes (122a, 122b) or the first and second power electrodes (121a, 121b) with the cold cooling gas without passing through the other electrode protection tubes (i.e., the two electrode protection tubes provided on each of the two sides).

[0124] The distance between the first floating electrode (122a) and the second floating electrode (122b) provided in the middle or the first power electrode (121a) and the second power electrode (121b) provided in the middle is small and close, so that the heat generated from each of the first and second floating electrodes (122a, 122b) provided in the middle or each of the first and second power electrodes (121a, 121b) provided in the middle may interfere due to thermal radiation and / or convection. In addition, the heating temperature of the first and second floating electrodes (122a, 122b) provided in the middle or the first and second power electrodes (121a, 121b) provided in the middle may be relatively higher than that of at least one of the first and second power electrodes (121a, 121b) provided on both sides or at least one of the first and second floating electrodes (122a, 122b) provided on both sides. And, cooling of the first and second floating electrodes (122a, 122b) provided in the middle or the first and second power electrodes (121a, 121b) provided in the middle may not be performed well, relatively to at least one of the first and second power electrodes (121a, 121b) provided on both sides or at least one of the first and second floating electrodes (122a, 122b) provided on both sides, through the cooling gas of the same temperature.

[0125] Accordingly, the cold cooling gas can be supplied first to each of the two electrode protection tubes (132 or 131) provided in the middle, where the first and second floating electrodes (122a, 122b) or the first and second power electrodes (121a, 121b) are respectively arranged, and when the cooling gas is in a cold state, it comes into contact with the first and second floating electrodes (122a, 122b) provided in the middle, or the first and second power electrodes (121a, 121b) provided in the middle, respectively, so that a large temperature difference occurs between the first and second floating electrodes (122a, 122b) provided in the middle, or the first and second power electrodes (121a, 121b) provided in the middle, and the cooling gas, so that the first and second floating electrodes (122a, 122b) provided in the middle, or the first and second power electrodes (121a, 121b) provided in the middle Active (or effective) heat exchange can occur between each of the above-described cooling gases. Accordingly, the first and second floating electrodes (122a, 122b) provided in the middle, which have relatively high heating temperatures or poor cooling, or the first and second power electrodes (121a, 121b) provided in the middle, can be effectively cooled.

[0126] On the contrary, in the case where the cooling gas supply unit (41) is connected to two electrode protection tubes (131 or 132) provided on both sides respectively, and the first and second power electrodes (121a, 121b) provided on both sides or the first and second floating electrodes (122a, 122b) provided on both sides are respectively arranged, and the cooling gas is supplied from each of the two electrode protection tubes (131 or 132) provided on both sides respectively, the cooling gas is heated while exchanging heat with each of the first and second power electrodes (121a, 121b) provided on both sides respectively or the first and second floating electrodes (122a, 122b) provided on both sides respectively while passing through each of the two electrode protection tubes (131 or 132) provided on both sides respectively, and the heated cooling gas is heated by each of the first and second floating electrodes (122a, 122b) provided in the middle or the middle The temperature difference between each of the first and second power electrodes (121a, 121b) may become small (or reduced), so that the first and second floating electrodes (122a, 122b) provided in the middle, which have relatively high heating temperatures or poor cooling, or the cooling of the first and second power electrodes (121a, 121b) provided in the middle, may become small (or ineffective).

[0127] The cooling gas discharge unit (42) can be connected to two electrode protection tubes (131 or 132) provided on both sides of the two electrode protection tubes (132 or 131) provided in the middle, and the cooling gas supplied to each of the two electrode protection tubes (132 or 131) provided in the middle can move (or introduce) to each of the two electrode protection tubes (131 or 132) provided on both sides through (plural) bridge units (133) the cooling gas that cools each of the first and second floating electrodes (122a, 122b) provided in the middle or each of the first and second power electrodes (121a, 121b) provided in the middle, and the cooling gas that has been introduced into each of the two electrode protection tubes (131 or 132) provided on both sides can be supplied to each of the first and second power electrodes (121a, 121b) provided on both sides or the first and second power electrodes (121a, 121b) provided on both sides. And after cooling the second floating electrodes (122a, 122b), the cooling gas can be discharged. Accordingly, the cooling gas can be supplied to the two electrode protection tubes (132 or 131) provided in the middle among the first and second electrode protection tubes (131 and 132) facing each other through the cooling gas supply unit (41), pass through the bridge unit (133), pass through the two electrode protection tubes (131 or 132) provided on both sides among the first and second electrode protection tubes (131 and 132) facing each other, and then discharged to the cooling gas discharge unit (42), thereby forming a flow of the cooling gas.

[0128] Here, the cooling gas supplied to the (two) electrode protection tubes (132 or 131) provided in the middle among the first electrode protection tubes (131) and the second electrode protection tubes (132) facing each other can cool the floating electrode (122) provided in the middle or the power electrode (121) provided in the middle, which has a relatively high heat generation temperature or poor cooling, and then move to the (two) electrode protection tubes (131 or 132) provided on both sides through the bridge portion (133). Here, even if the cooling gas is warmed by heat exchange with the floating electrode (122) provided in the middle or the power electrode (121) provided in the middle, it can have a temperature lower than the temperature of the power electrodes (121) provided on both sides or the floating electrodes (122) provided on both sides, and can cool the power electrodes (121) provided on both sides or the floating electrodes (122) provided on both sides. At this time, the first and second power electrodes (121a, 121b) provided on both sides or the first and second floating electrodes (122a, 122b) provided on both sides may have a lower heat generation temperature than the first and second floating electrodes (122a, 122b) provided in the middle or the first and second power electrodes (121a, 121b) provided in the middle. Accordingly, the first and second power electrodes (121a, 121b) provided on both sides or the first and second floating electrodes (122a, 122b) provided on both sides can be sufficiently cooled by the cooling gas heated by heat exchange with each of the first and second floating electrodes (122a, 122b) provided in the middle or each of the first and second power electrodes (121a, 121b) provided in the middle.

[0129] Meanwhile, the cooling gas discharge unit (42) may include an exhaust line connected to each of the two electrode protection tubes (131 or 132) provided on each of the two sides. The exhaust line can be connected to each of the two electrode protection tubes (131 or 132) provided on each of the two sides, and is supplied to each of the two electrode protection tubes (132 or 131) provided in the middle to cool the first and second floating electrodes (122a, 122b) provided in the middle or the first and second power electrodes (121a, 121b) provided in the middle, respectively, and after moving to each of the two electrode protection tubes (131 or 132) provided on each of the two sides through the bridge portion (133), the cooling gas that has cooled each of the first and second power electrodes (121a, 121b) provided on each of the two sides or the first and second floating electrodes (122a, 122b) provided on each of the two sides can be discharged. At this time, the exhaust line is connected so that the place where the cooling gas is discharged (e.g., the exhaust port) can be wider (or larger) than the place where the cooling gas is supplied (e.g., the inlet port), and accordingly, the cooling gas can be discharged smoothly, and the flow of the cooling gas can be made smooth according to the supply of the cooling gas.

[0130] And the exhaust line may include a first exhaust line connected to a pumping port; and a second exhaust line branching from the first exhaust line. The first exhaust line may be connected to a pumping port, and may form exhaust pressure (or exhaust pressure) in at least a portion of the exhaust line (e.g., the first exhaust line), and may smoothly discharge the cooling gas from two electrode protection tubes (131 or 132) provided on each of the two sides.

[0131] For example, the first exhaust line can be connected to a vacuum pump connected to the pumping port, and can quickly discharge the cooling gas heated by heat exchange with each floating electrode (122) and the power electrode (121), and can rapidly cool each floating electrode (122) and the power electrode (121), thereby increasing the cooling efficiency of each floating electrode (122) and the power electrode (121).

[0132] The second exhaust line can be branched from the first exhaust line, and can exhaust the cooling gas to the atmosphere without forming artificial exhaust pressure through the vacuum pump or the like.

[0133] At this time, the cooling gas discharge unit (42) may further include a diameter adjusting member (not shown) for adjusting the inner diameter of the exhaust line. The diameter adjusting member (not shown) can adjust the inner diameter of the exhaust line, and can adjust at least the inner diameter of the first exhaust line. Since the plurality of first electrode protection tubes (131) and the plurality of second electrode protection tubes (132) are made of quartz or the like and may be broken by vacuum pressure (or negative pressure), it is preferable to maintain the inside of the plurality of first electrode protection tubes (131) and the plurality of second electrode protection tubes (132) at an appropriate (internal) pressure (for example, atmospheric pressure level). In the case where exhaust pressure is formed in the exhaust line through the vacuum pump without the diameter adjusting member (not shown), an excessively low (internal) pressure (or vacuum pressure) may be formed within the plurality of first electrode protection tubes (131) and the plurality of second electrode protection tubes (132), which may cause the plurality of first electrode protection tubes (131) and / or the plurality of second electrode protection tubes (132) to break. Accordingly, even if exhaust pressure is formed in the exhaust line through the vacuum pump by reducing (or adjusting) the inner diameter of at least the first exhaust line among the exhaust lines through the diameter adjusting member (not shown), the inside of the plurality of first electrode protection tubes (131) and the plurality of second electrode protection tubes (132) can be maintained at an appropriate (internal) pressure.

[0134] For example, the diameter adjusting member (not shown) may include an orifice, and the orifice may be inserted into the 1 / 4 inch (in) first exhaust line so that the cooling gas that cools each floating electrode (122) and the power electrode (121) is constantly discharged to the vacuum pump. Here, the orifice is a thin plate with holes that can be used for the purpose of pressure drop and flow restriction, and can help discharge the cooling gas at a stable exhaust pressure.

[0135] In addition, the batch-type substrate processing device (100) of the present invention may further include a needle valve (not shown) installed in the exhaust line to control the amount of discharge of the cooling gas that cools each floating electrode (122) and the power electrode (121). The needle valve (not shown) may be installed in the exhaust line and may control a fine flow rate. Here, the needle valve (not shown) may manually control an ultra-fine flow rate, thereby controlling the exhaust amount for vacuum exhaust and / or atmospheric exhaust (or heat exhaust).

[0136] Here, the cooling gas discharge unit (42) may further include a first valve (not shown) provided in the first exhaust line; and a second valve (not shown) provided in the second exhaust line. The first valve (not shown) may be provided in the first exhaust line, and when the first valve (not shown) is opened, exhaust may be performed through the first exhaust line, and vacuum exhaust may be performed.

[0137] A second valve (not shown) may be provided in the second exhaust line, and when the second valve (not shown) is opened, exhaust may be performed through the second exhaust line, and atmospheric exhaust may be performed.

[0138] For example, the first valve (not shown) and the second valve (not shown) may be provided (or installed) after (or after) the confluence of the exhaust line connected to one of the two electrode protection tubes (131 or 132) provided on each of the two sides (for example, the first electrode protection tube on which the first power electrode is arranged) and the exhaust line connected to the other of the two electrode protection tubes (131 or 132) provided on each of the two sides (for example, the first electrode protection tube on which the second power electrode is arranged), and vacuum exhaust and atmospheric exhaust may be branched at the confluence depending on the opening and closing of the first valve (not shown) and the second valve (not shown).

[0139] At this time, the first valve (not shown) can be opened when power is supplied to the first and second power electrodes (121a, 121b), and the second valve (not shown) can be opened when power is not supplied to the first and second power electrodes (121a, 121b). That is, when (high frequency) power is supplied to the first and second power electrodes (121a, 121b) to generate plasma, heat is generated in the first and second power electrodes (121a, 121b) and the first and second floating electrodes (122a, 122b), so by opening the first valve (not shown) and forming exhaust pressure in the exhaust line, each floating electrode (122) and the power electrode (121) can be rapidly cooled, thereby increasing the cooling efficiency of the first and second floating electrodes (122a, 122b) and the first and second power electrodes (121a, 121b). In addition, when power is not supplied to the first and second power electrodes (121a, 121b) because plasma generation is not required, the second valve (not shown) can be opened to exhaust the cooling gas heated by heat exchange between each floating electrode (122) and the power electrode (121) to the atmosphere. Here, when the first valve (not shown) is opened, the second valve (not shown) can be closed (or closed), and when the second valve (not shown) is opened, the first valve (not shown) can be closed.

[0140] The above exhaust line can form an exhaust pressure of 0.15 mbar or more per 1 slm of the flow rate of the cooling gas, and specifically, an exhaust pressure of 0.15 to 20 mbar or more per 1 slm of the flow rate of the cooling gas. Due to the sagging (or tilting) phenomenon of the first power electrode (121a), the second power electrode (121b), the first floating electrode (122a), or the second floating electrode (122b), the gap between each electrode (121 or 122) and the electrode protection tube (131 or 132) becomes irregular, which may hinder the flow of the cooling gas, and may act as a factor that reduces the cooling efficiency of the first and second power electrodes (121a, 121b) and / or the first and second floating electrodes (122a, 122b).

[0141] Accordingly, the exhaust line can form an exhaust pressure of 0.15 mbar or more per 1 slm of the flow rate of the cooling gas, and in this case, the sagging phenomenon of the first power electrode (121a), the second power electrode (121b), the first floating electrode (122a) or the second floating electrode (122b) can be suppressed or prevented, so that the gap between each electrode (121 or 122) and the electrode protection tube (131 or 132) can be maintained at the same level, and even if the gap between each electrode (121 or 122) and the electrode protection tube (131 or 132) is not constant, the cooling gas can flow at a (almost) constant (or the same level) flow rate to each of the first electrode protection tube (131) and the second electrode protection tube (132), so that the cooling efficiency of the first and second power electrodes (121a, 121b) and the first and second floating electrodes (122a, 122b) can be improved. It can be equalized.

[0142] At this time, if an exhaust pressure exceeding 20 mbar per 1 slm of the flow rate of the cooling gas is formed in the exhaust line, the cooling gas flows too quickly, so that heat exchange with the first power electrode (121a), the second power electrode (121b), the first floating electrode (122a) and / or the second floating electrode (122b) does not sufficiently occur, and rather, the cooling efficiency of the first and second power electrodes (121a, 121b) and / or the first and second floating electrodes (122a, 122b) may be reduced.

[0143] And, the exhaust pressure of the exhaust line connected to one of the two electrode protection tubes (131 or 132) provided on each of the two sides (for example, the first electrode protection tube in which the first power electrode is arranged) and the exhaust line connected to the other of the two electrode protection tubes (131 or 132) provided on each of the two sides (for example, the first electrode protection tube in which the second power electrode is arranged) can be respectively adjusted (or controlled). By adjusting the exhaust pressure of the exhaust line connected to one of the two electrode protection tubes (131 or 132) provided on each of the two sides and the exhaust line connected to the other of the two electrode protection tubes (131 or 132) provided on each of the two sides, the cooling gas can be caused to flow at an (almost) constant flow rate to the plurality of first electrode protection tubes (131) and / or the plurality of second electrode protection tubes (132). At this time, the flow rate of each of the two electrode protection tubes (131 or 132) provided on both sides is measured, and the exhaust pressure of the exhaust line connected to one of the two electrode protection tubes (131 or 132) provided on both sides and the exhaust line connected to the other of the two electrode protection tubes (131 or 132) provided on both sides can be respectively adjusted. In addition, the flow rate of each of the plurality of first electrode protection tubes (131) and the plurality of second electrode protection tubes (132) can be changed for appropriate cooling depending on the temperatures of the first and second power electrodes (121a, 121b) and the first and second floating electrodes (122a, 122b), etc., and the exhaust pressure of the exhaust line connected to one of the two electrode protection tubes (131 or 132) provided on both sides and the exhaust line connected to the other of the two electrode protection tubes (131 or 132) provided on both sides can also be respectively adjusted.

[0144] The plurality of bridge parts (133) may have an inner diameter smaller than the inner diameters of the plurality of first electrode protection tubes (131) and the plurality of second electrode protection tubes (132). When the plurality of bridge parts (133) have an inner diameter smaller than the inner diameters of the plurality of first electrode protection tubes (131) and the plurality of second electrode protection tubes (132), after the cooling gas is sufficiently filled in each of the two electrode protection tubes (132 or 131) provided in the middle among the first electrode protection tubes (131) and the second electrode protection tubes (132) facing each other, the cooling gas can be distributed and flow to each of the two electrode protection tubes (131 or 132) provided on each of the two opposite sides, and since the cooling gas is sufficiently filled in each of the two electrode protection tubes (132 or 131) provided in the middle, oxidation of each floating electrode (122) can be effectively prevented.

[0145] Conversely, when the plurality of bridge portions (133) have an inner diameter greater than the inner diameter of the plurality of first electrode protection tubes (131) and / or the plurality of second electrode protection tubes (132), the cooling gas supplied into the (two) electrode protection tubes (132 or 131) provided in the middle may flow out into the plurality of bridge portions (133) before the (two) electrode protection tubes (132 or 131) provided in the middle are (sufficiently) filled. Due to this, the cooling gas may not be provided to the entire surface of the first power electrode (121a), the second power electrode (121b), the first floating electrode (122a) and / or the second floating electrode (122b), which may reduce the anti-oxidation effect, and parts where heat exchange does not occur may be created, which may reduce the cooling efficiency, and temperature unevenness may occur at each location in the first power electrode (121a), the second power electrode (121b), the first floating electrode (122a) and / or the second floating electrode (122b), which may damage the first power electrode (121a), the second power electrode (121b), the first floating electrode (122a) and / or the second floating electrode (122b), or may also affect the plasma discharge (or generation) performance.

[0146] Therefore, in the present invention, these problems can be solved by making the inner diameter of the plurality of bridge parts (133) smaller than the inner diameter of the plurality of first electrode protection tubes (131) and the plurality of second electrode protection tubes (132).

[0147] Here, the cooling gas may include an inert gas, and the inert gas may be nitrogen (N2), argon (Ar), etc. By supplying an inert gas such as nitrogen (N2) into the plurality of first electrode protection tubes (131) and the plurality of second electrode protection tubes (132), it is possible to prevent oxygen (O2) from flowing into or remaining in the plurality of first electrode protection tubes (131) and the plurality of second electrode protection tubes (132), and to prevent the first and second power electrodes (121a, 121b) and the first and second floating electrodes (122a, 122b) from reacting with oxygen (O2) and being oxidized.

[0148] The cooling gas supply unit (41) can supply a smaller amount of cooling gas when power is not supplied to the first and second power electrodes (121a, 121b) than when power is supplied to the first and second power electrodes (121a, 121b). Since heat is generated only when power is supplied to the first and second power electrodes (121a, 121b) and the first and second floating electrodes (122a, 122b) to generate plasma, when plasma is not generated (or discharged) and power is not supplied to the first and second power electrodes (121a, 121b), the cooling gas can be supplied at a flow rate (e.g., 3 slm) lower than the flow rate (e.g., 10 slm) when power is supplied to the first and second power electrodes (121a, 121b), and energy consumption can be saved by exhausting it to the general atmospheric exhaust.

[0149] The batch type substrate processing device (100) of the present invention may further include a gas supply sealing cap (141) which is connected to one of the first electrode protection tubes (131) and the second electrode protection tubes (132) which face each other, and has an inlet (141a) through which the cooling gas is supplied formed on a side wall of an internal space that communicates with one of the electrode protection tubes (132 or 131); and a gas discharge sealing cap (142) which is connected to the other of the first electrode protection tubes (131 or 132) and the second electrode protection tubes (132) which face each other, and has an exhaust port (142a) through which the cooling gas is discharged formed on a side wall of an internal space that communicates with the other of the electrode protection tubes (131 or 132).

[0150] The gas supply sealing cap (141) can be connected to one of the first electrode protection tubes (131) and the second electrode protection tubes (132) facing each other, and can have an internal space communicating with one of the electrode protection tubes (132 or 131) so that at least a part of the electrode (122 or 121) inserted into one of the electrode protection tubes (132 or 131) can be inserted (or accommodated). For example, the gas supply sealing cap (141) can be connected to two electrode protection tubes (132 or 131) provided in the middle. In addition, the gas supply sealing cap (141) can have an inlet (141a) formed radially on a side wall of the internal space communicating with one of the electrode protection tubes (132 or 131) through which the cooling gas is supplied. That is, the inlet (141a) can be formed in a direction perpendicular to the extension direction of the electrode (122 or 121) inserted into any one of the electrode protection tubes (132 or 131).

[0151] For example, the gas supply sealing cap (141) may be connected to the lower end of any one of the electrode protection tubes (132 or 131), and a first sealing member (135), such as an O-ring, may be interposed between any one of the electrode protection tubes (132 or 131) and the gas supply sealing cap (141). In addition, the lower end (or rear end) of the electrode (122 or 121) inserted into any one of the electrode protection tubes (132 or 131) may be drawn out by penetrating the gas supply sealing cap (141), and the electrode (122 or 121) inserted into any one of the electrode protection tubes (132 or 131) may have a protrusion formed that is wider than other portions accommodated in the internal space of the gas supply sealing cap (141), and may be placed over a step of the lower end (e.g., rear end) of the gas supply sealing cap (141). Here, the protrusion may be formed so that the electrode (122 or 121) inserted into any one of the electrode protection tubes (132 or 131) protrudes, or may be formed by adding the same material or a different material to the electrode (122 or 121) inserted into any one of the electrode protection tubes (132 or 131). At this time, a second sealing member (145), such as an O-ring, may be interposed between the protrusion of the electrode (122 or 121) inserted into any one of the electrode protection tubes (132 or 131) and the step at the lower end of the gas supply sealing cap (141). Accordingly, the electrode (122 or 121) inserted into any one of the electrode protection tubes (132 or 131) can be stably supported, thereby preventing or suppressing the sagging phenomenon of the electrode (122 or 121) inserted into any one of the electrode protection tubes (132 or 131), and the lower end of any one of the electrode protection tubes (132 or 131) can be sealed.

[0152] The gas discharge sealing cap (142) can be connected to the other electrode protection tube (131 or 132) among the first electrode protection tube (131) and the second electrode protection tube (132) facing each other, and can have an internal space communicating with the other electrode protection tube (131 or 132) so that at least a part of the electrode (121 or 122) inserted into the other electrode protection tube (131 or 132) is inserted. For example, the gas discharge sealing cap (142) can be connected to two electrode protection tubes (131 or 132) provided on each of the two sides. In addition, the gas discharge sealing cap (142) can have an exhaust port (142a) formed in a radial direction on a side wall of the internal space communicating with the other electrode protection tube (131 or 132) through which the cooling gas is discharged. That is, the exhaust port (142a) can be formed in a direction perpendicular to the extension direction of the electrode (121 or 122) inserted into the other electrode protection tube (131 or 132).

[0153] For example, the gas discharge sealing cap (142) may be connected to the lower end of the other electrode protection tube (131 or 132), and a first sealing member (135) may be interposed between the other electrode protection tube (131 or 132) and the gas discharge sealing cap (142). In addition, the lower end of the electrode (121 or 122) inserted into the other electrode protection tube (131 or 132) may be drawn out by penetrating the gas discharge sealing cap (142), and the electrode (121 or 122) inserted into the other electrode protection tube (131 or 132) may have a protrusion formed that is wider than another portion accommodated in the internal space of the gas discharge sealing cap (142), and may be placed over the step of the lower end of the gas discharge sealing cap (142). Here, the protrusion may be formed so that the electrode (121 or 122) itself inserted into the other electrode protection tube (131 or 132) protrudes, or may be formed by adding the same material or a different material to the electrode (121 or 122) inserted into the other electrode protection tube (131 or 132). At this time, a second sealing member (145) may be interposed between the protrusion of the electrode (121 or 122) inserted into the other electrode protection tube (131 or 132) and the step at the lower end of the gas discharge sealing cap (142). Accordingly, the electrode (121 or 122) inserted into the other electrode protection tube (131 or 132) can be stably supported, thereby preventing or suppressing the sagging phenomenon of the electrode (121 or 122) inserted into the other electrode protection tube (131 or 132), and the lower end of the other electrode protection tube (131 or 132) can be sealed.

[0154] Meanwhile, by supplying the cooling gas toward the side of the electrode (122 or 121) inserted into the electrode protection tube (132 or 131) through the inlet (141a) formed in a direction perpendicular to the extension direction of the electrode (122 or 121) inserted into the electrode protection tube (132 or 131), the cooling gas can be quickly and effectively spread along the side of the electrode (122 or 121) inserted into the electrode protection tube (132 or 131), and the cooling gas can flow in contact with the surface of the electrode (122 or 121) inserted into the electrode protection tube (132 or 131), so that heat exchange can be effectively performed between the electrode (122 or 121) inserted into the electrode protection tube (132 or 131) and the cooling gas. In addition, by forming a fast and effective flow of the cooling gas along the side of the electrode (121 or 122) inserted into the other electrode protection tube (131 or 132) through the exhaust port (142a) formed in a direction perpendicular to the extension direction of the electrode (121 or 122) inserted into the other electrode protection tube (131 or 132), the cooling gas flows in contact with the surface of the electrode (121 or 122) inserted into the other electrode protection tube (131 or 132), so that heat exchange can be effectively performed between the electrode (121 or 122) inserted into the other electrode protection tube (131 or 132) and the cooling gas.

[0155] And the inlet (141a) of the gas supply sealing cap (141) and the exhaust port (142a) of the gas discharge sealing cap (142) may be different in (extension) direction, (formation) position, size (or diameter) and / or number.

[0156] For example, the inlet (141a) of the gas supply sealing cap (141) and the exhaust port (142a) of the gas discharge sealing cap (142) are provided symmetrically with opposite (extension) directions, thereby forming a smooth flow of the cooling gas as shown in FIG. 3.

[0157] In addition, the inlet (141a) of the gas supply sealing cap (141) and the exhaust port (142a) of the gas discharge sealing cap (142) may be formed (or positioned) on opposite sides symmetrically to each other, and the inlet (141a) of the gas supply sealing cap (141) may be positioned on the opposite side of the side facing the gas discharge sealing cap (142) (or the side of one of the electrode protection tubes facing the other of the electrode protection tubes), and the exhaust port (142a) of the gas discharge sealing cap (142) may be positioned on the opposite side of the side facing the gas supply sealing cap (141) (or the side of the other of the electrode protection tubes facing the one of the electrode protection tubes).

[0158] In the case where the inlet (141a) of the gas supply sealing cap (141) is located on the side facing the gas discharge sealing cap (142) (or on the side where any one of the electrode protection tubes is connected to the bridge section), the cooling gas flows along the side opposite to the inlet (141a) of the gas supply sealing cap (141) of the electrode (122 or 121) inserted into any one of the electrode protection tubes (132 or 131) and directly escapes to the bridge section (133), so that the side opposite to the side opposite to the inlet (141a) of the gas supply sealing cap (141) of the electrode (122 or 121) inserted into any one of the electrode protection tubes (132 or 131) may not be properly cooled. In addition, when the exhaust port (142a) of the gas discharge sealing cap (142) is located on the side facing the gas supply sealing cap (141) (or the side on which the other electrode protection tube is connected to the bridge section), the cooling gas delivered to the bridge section (133) flows along the side opposite to the exhaust port (142a) of the gas discharge sealing cap (142) of the electrode (121 or 122) inserted into the other electrode protection tube (131 or 132) and directly escapes through the exhaust port (142a) of the gas discharge sealing cap (142), so that the side opposite to the side opposite to the exhaust port (142a) of the gas discharge sealing cap (142) of the electrode (121 or 122) inserted into the other electrode protection tube (131 or 132) may not be properly cooled.

[0159] However, when the inlet (141a) of the gas supply sealing cap (141) is located on the opposite side of the side facing the gas discharge sealing cap (142), and the exhaust port (142a) of the gas discharge sealing cap (142) is located on the opposite side of the side facing the gas supply sealing cap (141), the entire electrode (122 or 121) inserted into one electrode protection tube (132 or 131) and the electrode (121 or 122) inserted into the other electrode protection tube (131 or 132) can be effectively cooled.

[0160] And, in order to effectively discharge the cooling gas through the exhaust port (142a) of the gas discharge sealing cap (142) and form a smooth flow of the cooling gas, the gas discharge sealing cap (142) may be formed with an exhaust port (142a) larger in size and / or in greater number than the inlet port (141a) of the gas supply sealing cap (141).

[0161] For example, when the cooling gas supply unit (41) is connected to each of a plurality of second electrode protection tubes (132) and the cooling gas discharge unit (42) is connected to each of a plurality of first electrode protection tubes (131), the gas supply sealing cap (141) can be connected (or provided) to each of the plurality of second electrode protection tubes (132), and the gas discharge sealing cap (142) can be connected to each of the plurality of first electrode protection tubes (131).

[0162] In addition, the gas supply sealing cap (141), the gas discharge sealing cap (142), the first sealing member (135) and the second sealing member (145) may be made of a flame-retardant material to eliminate deformation due to heat.

[0163]

[0164] In this way, in the present invention, by using a floating electrode instead of a ground electrode as an electrode that operates with a power electrode, the potential difference between the plasma potential and the floating potential is minimized when generating plasma, thereby allowing more current to flow to improve the plasma density and increasing the radical density. At this time, by providing a capacitor between the floating electrode and the ground, the floating electrode can be floated, thereby lowering the overall impedance of the plasma forming part to implement an optimized low impedance, thereby lowering the applied voltage and allowing a relatively large amount of current to flow. Through this, the process time can be shortened by utilizing high plasma density and radicals, and at the same time, by lowering the applied voltage, the sputtering effect can be reduced, thereby maximizing the lifespan of multiple electrodes. When a high-frequency power source is applied to form a capacitively coupled plasma with two pairs of electrodes, inductively coupled plasma characteristics are expressed, and LC resonance can be achieved. The higher the frequency used, the greater the inductive coupling effect. To prevent this, a capacitor can be installed at the bottom of the floating electrode to provide electrostatic capacitance, thereby avoiding LC resonance. Furthermore, by distributing high-frequency power supplied from a single high-frequency power source at a constant ratio through a power distribution unit and providing it to multiple power source electrodes, a uniform plasma can be formed in the gaps between the power source electrode and the floating electrode.

[0165]

[0166] While preferred embodiments of the present invention have been illustrated and described above, the present invention is not limited to the above-described embodiments, and those skilled in the art will understand that various modifications and equivalent other embodiments are possible without departing from the spirit and scope of the present invention as claimed in the claims. Accordingly, the technical protection scope of the present invention should be defined by the following claims.

Claims

1. A reaction tube providing a processing space in which multiple substrates are accommodated; and A plurality of electrodes extending along the length of the reaction tube and arranged in the circumferential direction of the reaction tube; The above plurality of electrodes are, First and second power electrodes spaced apart from each other; and A batch-type substrate processing device including first and second floating electrodes provided between the first and second power electrodes or on both sides centered around the first and second power electrodes.

2. In claim 1, A batch-type substrate processing device further comprising a capacitor, one side of which is connected to at least one of the first and second floating electrodes and the other side of which is grounded.

3. In claim 2, A batch-type substrate processing device wherein the first and second floating electrodes are both connected to one side of the capacitor.

4. In claim 2, A batch-type substrate processing device in which the capacitance of the above capacitor is 0.1 to 1,000 pF or less.

5. In claim 1, The above reaction tube includes an exhaust port for exhausting the processing space, A batch-type substrate processing device in which the above plurality of electrodes are arranged on opposite sides of the exhaust port.

6. In claim 1, A batch-type substrate processing device further comprising a high-frequency power supply unit that supplies high-frequency power to the first and second power electrodes.

7. In claim 6, A batch-type substrate processing device further comprising a power distribution unit provided between the high-frequency power supply unit and the first and second power electrodes, and distributing the high-frequency power supplied from the high-frequency power supply unit and providing it to the first power electrode and the second power electrode, respectively.

8. In claim 7, A batch-type substrate processing device, wherein the power distribution unit includes a distribution point at which the high-frequency power is distributed to the first power electrode and the second power electrode, and a variable capacitor provided between at least one of the first and second power electrodes.

9. In claim 1, Further comprising an electrode protection unit for protecting the plurality of electrodes; The above electrode protection part, A plurality of first electrode protection tubes each surrounding the first power electrode and the second power electrode; A plurality of second electrode protection tubes each surrounding the first floating electrode and the second floating electrode; and A batch-type substrate processing device including a bridge section connecting a first electrode protection tube and a second electrode protection tube that are opposed to each other.

10. In claim 9, The above bridge portion connects the first electrode protection tube and the second electrode protection tube, A cooling gas supply unit that supplies cooling gas by being connected to one of the first electrode protection tube and the second electrode protection tube that are connected by the bridge unit; and A batch-type substrate processing device further comprising a cooling gas discharge unit connected to the other of the first and second electrode protection tubes and discharging the cooling gas supplied to one of the electrode protection tubes.

11. In claim 10, The above cooling gas supply unit is connected to two electrode protection tubes provided in the middle of the plurality of first electrode protection tubes and the plurality of second electrode protection tubes, respectively. The above cooling gas discharge unit is a batch-type substrate processing device, each connected to two electrode protection tubes provided on both sides of the two electrode protection tubes provided in the middle.

12. In claim 10, The above cooling gas is a batch type substrate processing device containing an inert gas.

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