Manufacturing equipment comprising vacuum process chambers and manufacturing process implemented in such equipment

Abstract

The invention relates to manufacturing equipment (1) comprising: • - at least one set of two process roughing pumps (5a, 5b), the inlets of said process roughing pumps (5a, 5b) of the set being fluidically connected via respective second isolation valves (6a, 6b) to a common pipe (7) fluidically connected to the outlets of turbomolecular vacuum pumps (3a, 3b, 3c,... 3n), all of the outlets of the turbomolecular vacuum pumps (3a, 3b, 3c,... 3n) being fluidically connected to the two process roughing pumps (5a, 5b) of the at least one set, and • - a service roughing pump (8) fluidically connected to the process chambers (2a, 2b, 2c,... 2n) of said equipment (1) via respective third isolation valves (9a, 9b, 9c,... 9n).

Description

Description MANUFACTURING EQUIPMENT COMPRISING VACUUM PROCESS CHAMBERS AND THE MANUFACTURING PROCESS IMPLEMENTED IN SUCH EQUIPMENT Technical field of the invention

[0001] The present invention relates to manufacturing equipment, particularly for manufacturing semiconductor components, LEDs (Light-Emitting Diodes), or flat panel displays, said equipment comprising at least two process chambers and as many turbomolecular vacuum pumps fluidly connected to a respective process chamber. The present invention also relates to a manufacturing process implemented in such equipment. Technical background

[0002] Vacuum pumps are used in particular in equipment for manufacturing semiconductors, LEDs or flat screens, requiring a pressure lower than atmospheric pressure.

[0003] Some process chambers of these manufacturing facilities are equipped with turbomolecular vacuum pumps fluidly connected to a respective primary vacuum pump to achieve the desired low production pressures.

[0004] To increase throughput, this equipment can be multi-chamber (called "clusters"). This equipment typically includes at least four process chambers and up to twelve chambers for the latest generation. Each chamber is fluidly connected to a turbomolecular vacuum pump, which is itself fluidly connected to a primary vacuum pump, so that each piece of equipment has as many turbomolecular vacuum pumps and primary vacuum pumps as there are process chambers.

[0005] Because primary vacuum pumps are bulky, noisy, and hot, they can be relocated, particularly in semiconductor manufacturing plants, to a floor below the one housing the process chambers. The fluid connections between the primary vacuum pumps and the turbomolecular vacuum pumps between the floors are made using separate pipes, sometimes heated to prevent the formation of reaction byproducts that could reduce pumping performance or even damage the vacuum pumps.

[0006] Today, the aim is to simplify these multi-chamber manufacturing equipment. Summary of the invention

[0007] One aim of the present invention is to reduce the cost of investment and use of manufacturing equipment while maintaining high reliability and similar pumping performance.

[0008] To this end, the invention relates to manufacturing equipment, in particular for semiconductor components, LEDs or flat screens, comprising at least two process chambers and as many turbomolecular vacuum pumps fluidly connected to a respective process chamber via respective first isolation valves, characterized in that it further comprises: - at least one set of two primary process vacuum pumps, the inlets of said primary process vacuum pumps of the set being fluidly connected via respective second isolation valves to a common pipeline fluidly connected to the outlets of the turbomolecular vacuum pumps, all outlets of the turbomolecular vacuum pumps being fluidly connected to the two primary process vacuum pumps of at least one set, and - a primary service vacuum pump fluidly connected to the process chambers of said equipment via respective third isolation valves.

[0009] The primary process vacuum pumps and the primary service vacuum pump are configured to be able to lower the pressure in a process chamber from atmospheric pressure.

[0010] This sharing of primary process vacuum pumps is possible, firstly, because for pressures below a certain threshold, a change in discharge pressure does not cause a change in suction pressure of the turbomolecular vacuum pump. In other words, as long as the discharge pressure of the turbomolecular vacuum pump is below the threshold, there is no impact upstream of the turbomolecular vacuum pump. The same pumping performance is expected for the turbomolecular vacuum pumps as if they had a dedicated primary pump.

[0011] The two primary process vacuum pumps, each configured to maintain the discharge pressures of the turbomolecular vacuum pumps below the pressure threshold, ensure that the vacuum is maintained in the process chambers during manufacturing steps in the event of a failure of one of the process vacuum pumps, at least until the ongoing manufacturing steps are completed. This prevents damage to the substrates being manufactured in the process chambers.

[0012] The manufacturing equipment is thus less expensive to invest in and reduces the footprint (saving 40% to 50%) because it includes fewer primary vacuum pumps and reduces the number of pipes connecting the cleanroom's turbomolecular vacuum pumps to the basement, as well as the number of electrical (boxes and cables) and fluid connections required for the primary vacuum pumps to operate. It is also less expensive to operate. This is achieved through a reduction in electrical consumption (savings of 30% to 60%), purge gas consumption (savings of at least 50%), and cooling heat transfer fluid consumption (savings of 50%) required for the operation of each primary vacuum pump. The equipment is also more reliable than prior art equipment because it has a backup primary vacuum pump in case of failure of a primary process vacuum pump, thus preventing the loss of substrate during production.

[0013] The equipment may also include one or more of the features described below, taken alone or in combination.

[0014] The primary process vacuum pumps in the assembly can be identical.

[0015] Each of the two primary process vacuum pumps is specifically configured to be able to lower the discharge pressure of the turbomolecular vacuum pumps to which they are fluidly connected, to a pressure below a pressure threshold below which a change in discharge pressure does not cause a change in suction pressure of the turbomolecular vacuum pump, including when a gas flow is injected at a predetermined maximum value into all process chambers located upstream of said turbomolecular vacuum pumps.

[0016] A set of two primary process vacuum pumps is, for example, fluidly connected to two, three, four, five or six turbomolecular vacuum pumps.

[0017] The process chambers, turbomolecular vacuum pumps, first isolation valves and third isolation valves are arranged in the cleanroom and the primary process vacuum pumps, second isolation valves and the primary service vacuum pump can be arranged on a floor located below the cleanroom.

[0018] A service pipe fluidly connecting the pipes of the third isolation valves to the primary service vacuum pump has, for example, a diameter of 40 mm or 50 mm.

[0019] The common pipe, for example, has a diameter of 160 mm.

[0020] The equipment may include: - at least two airlocks, each configured to receive a substrate in one chamber of the airlock and lower the atmospheric pressure in the chamber to a predetermined transfer pressure and / or to receive a substrate at a predetermined transfer pressure in one chamber of the airlock and raise the pressure in the chamber to atmospheric pressure, - a transfer chamber configured to transfer substrates at the predetermined transfer pressure from the airlock to a process chamber and from a process chamber to an airlock.

[0021] The equipment may include a control unit configured to control the opening and closing of the first isolation valves, the second isolation valves, and the third isolation valves.

[0022] The equipment can be configured to implement manufacturing steps for which the maximum value of the gas flow injected into each process chamber is less than 3,000 sccm (5.07 Pa.m). 3 / s).

[0023] The equipment can be configured to perform etching or vacuum deposition of thin films.

[0024] The invention also relates to a manufacturing process characterized in that it is implemented in manufacturing equipment as described above, in which, during the substrate manufacturing steps: - in a fault-free situation, the second isolation valves are open so that at least two primary process vacuum pumps simultaneously draw from the outlet of the turbomolecular vacuum pumps to which they are fluidly connected, - in the event of failure of one of the primary process vacuum pumps, the second isolation valve located upstream of the failed process vacuum pump closes, isolating the failed process vacuum pump, the other primary process vacuum pump alone ensuring the pumping at the discharge of the turbomolecular vacuum pumps.

[0025] Each of the two primary process vacuum pumps lowers the discharge pressure of the turbomolecular vacuum pumps to which they are fluidly connected, to a pressure below a pressure threshold below which a change in discharge pressure does not cause a change in suction pressure of the turbomolecular vacuum pump, including when a gas flow is injected at a predetermined maximum value into all process chambers located upstream of said turbomolecular vacuum pumps. Brief description of the figures

[0026] Other advantages and features will become apparent upon reading the following description of a particular, but by no means limiting, embodiment of the invention, as well as the accompanying drawings in which:

[0027] [Fig.1] Figure 1 shows a schematic top view of a semiconductor component manufacturing equipment.

[0028] [Fig.2] Figure 2 shows a schematic view of a manufacturing equipment, such as that in Figure 1.

[0029] [Fig. 3] Figure 3 shows a graph of the suction pressure of a turbomolecular vacuum pump (in mbar: 10 2 Pa) depending on the discharge pressure of the turbomolecular vacuum pump (in mbar: 10 2 Pa) for different nitrogen flux values: 50 sccm, 100 sccm, 200 sccm, 500 sccm, 1000 sccm, 2000 sccm and 5000 sccm.

[0030] [Fig.4] Figure 4 shows a histogram of the discharge pressure: - turbomolecular vacuum pumps (in mbar: 10 2 Pa) during an etching step (turbomolecular vacuum pumps being said to be "active") and - standby turbomolecular vacuum pumps (with little or no gas flow injected into the process chamber to be pumped), depending on the number of active turbomolecular vacuum pumps, six-process chamber equipment and a set of two associated primary process vacuum pumps.

[0031] [Fig.5] Figure 5 shows a view similar to Figure 1 for another example of manufacturing equipment realization.

[0032] In these figures, identical or similar elements bear the same reference numbers.

[0033] Only the elements necessary for understanding the invention are represented. Detailed description

[0034] The following embodiments are examples. Although the description refers to one or more embodiments, this does not necessarily mean that each reference relates to the same embodiment, or that the features apply only to a single embodiment. Simple features of different embodiments can also be combined or interchanged to provide other embodiments, without departing from the scope of the invention as defined by the claims.

[0035] The term "upstream" refers to an element that is positioned before another element in relation to the direction of flow of the pumped gases. Conversely, the term "downstream" refers to an element positioned after another element in relation to the direction of flow of the pumped gases.

[0036] The manufacture of certain devices, in particular the manufacture of semiconductor components, LEDs or flat screens, requires the execution of various physico-chemical processes on substrates such as wafers, generally made of silicon in the semiconductor component manufacturing industry, called "wafers" in English.

[0037] These processes are carried out in automated manufacturing equipment, generally arranged in controlled cleanroom environments.

[0038] The multi-chamber manufacturing equipment 1 (called "cluster" in English) comprises several process chambers 2a, 2b, 2c, ...2n, each allowing physico-chemical operations to be carried out on a substrate for the purpose of manufacturing semiconductor components, LEDs or flat screens.

[0039] The manufacturing equipment 1 includes, in particular, at least two loadlocks 100, 102, a transfer chamber 101, and at least two process chambers 2a, 2b, 2c, ...2n, such that the number of process chambers 2a, 2b, 2c, ...2n is between four and twelve. Figure 1 illustrates the specific case of semiconductor component manufacturing equipment 1 with six process chambers 2a-2f.

[0040] The at least two airlocks 100, 102 are each configured to receive a substrate and lower the atmospheric pressure surrounding the substrate to a predetermined transfer pressure and / or to receive a substrate at a predetermined transfer pressure and raise the pressure surrounding the substrate to atmospheric pressure.

[0041] For example, there is an inlet airlock 100 configured to receive a substrate in a chamber 104 of the airlock 100 and lower the atmospheric pressure surrounding the substrate in the chamber 104 to a predetermined transfer pressure, and an outlet airlock 102 configured to receive a substrate in a chamber 105 of the airlock 102 at the predetermined transfer pressure and raise the pressure surrounding the substrate to atmospheric pressure to remove the substrate from the chamber 105.

[0042] The transfer chamber 101 includes an enclosure 107 that can communicate with each of the process chambers 2a, 2b, 2c, ...2n and the airlocks 100, 102 via respective doors. The transfer chamber 101 further includes at least one robot 108 arranged in the enclosure 107, configured to transfer, at the predetermined transfer pressure, the substrates from chamber 104 of an airlock 100, 102 to a process chamber 2a, 2b, 2c, ...2n where the physico-chemical operations can take place, and from a process chamber 2a, 2b, 2c, ...2n to chamber 105 of an airlock 100, 102 once these operations are completed.

[0043] Equipment 1 thus allows the 100, 102 airlocks to be shared for several process chambers 2a, 2b, 2c, ...2n.

[0044] As can be seen in Figure 2, equipment 1 (such as that illustrated in Figure 1) includes as many turbomolecular vacuum pumps 3a, 3b, 3c, ...3n as process chambers 2a, 2b, 2c, ...2n.

[0045] The turbomolecular vacuum pumps 3a, 3b, 3c, ...3n are fluidly connected to a respective process chamber 2a, 2b, 2c, ...2n via respective first isolation valves 4a, 4b, 4c, ...4n.

[0046] The first isolation valves 4a, 4b, 4c, ...4n can be controlled by opening / closing. These are, for example, solenoid valves.

[0047] Turbomolecular vacuum pumps 3a, 3b, 3c, ...3n comprise a stator in which a rotor is configured to rotate at high speed in axial rotation, for example, at more than twenty thousand revolutions per minute. The pumped gases enter through an orifice suction and are discharged through a discharge port of the turbomolecular vacuum pump 3a, 3b, 3c, ...3n. The rotor has at least one stage of blades and the stator has at least one stage of fins, the stages of blades and fins following one another axially along the axis of rotation of the rotor.

[0048] Equipment 1 further comprises at least one set of two primary vacuum process pumps 5a, 5b.

[0049] A primary vacuum pump is a positive displacement vacuum pump configured to use two rotors to draw in, transfer, and then discharge the gas to be pumped at atmospheric pressure or above. For example, a multistage primary vacuum pump can have between two and ten pumping stages. Each pumping stage consists of a pumping chamber housing two coupled rotors, with each pumping chamber having an inlet and an outlet. Successive pumping stages are connected in series by interstage channels that connect the outlet of the preceding pumping stage to the inlet of the following stage. The primary vacuum pump is often described as "dry" because, during operation, the rotors rotate inside the stator without any mechanical contact between themselves or the stator, thus eliminating the need for oil in the pumping chamber(s).In another example, the primary vacuum pump is a screw pump.

[0050] Depending on the pumping applications, and particularly in manufacturing processes that may use corrosive process gases, such as semiconductor component manufacturing processes, primary vacuum pumps of processes 5a and 5b can be further configured to be corrosion-resistant, especially against fluorine, chlorine, or bromine gases used in etching steps. For example, they can be nickel-plated.

[0051] The inlets of the two primary process vacuum pumps 5a, 5b of the assembly are fluidly connected via respective second isolation valves 6a, 6b to a common pipeline 7 fluidly connected to the outlets (discharge ports) of the turbomolecular vacuum pumps 3a, 3b, 3c, ...3n of the equipment 1 (Figure 2).

[0052] The second isolation valves 6a, 6b are controllable for opening / closing. These are, for example, solenoid valves.

[0053] Equipment 1 may include fourth isolation valves 12a, 12b, 12c, ... 12n at the discharge of the turbomolecular vacuum pumps 3a, 3b, 3c, ... 3n (upstream of the common pipeline 7). These fourth isolation valves 12a, 12b, 12c, ... 12n may be used in conjunction with the first isolation valves 4a, 4b, 4c, ... 4n to isolate the turbomolecular vacuum pumps 3a, 3b, 3c, ... 3n from themselves, for example during maintenance of a primary process vacuum pump 5a, 5b.

[0054] All outlets of the turbomolecular vacuum pumps 3a, 3b, 3c, ...3n are fluidly connected to the two primary process vacuum pumps 5a, 5b of at least one set (via the fourth isolation valves 12a, 12b, 12c, ...12n where applicable). For example, there is one set of two primary process vacuum pumps 5a, 5b fluidly connected to a maximum of two, three, four, five, or six turbomolecular vacuum pumps 3a, 3b, 3c, ...3n.

[0055] The two primary process vacuum pumps 5a, 5b of the assembly are for example identical or in other words, are the same two primary vacuum pumps 5a, 5b.

[0056] Each of the two primary process vacuum pumps 5a, 5b is configured to be able to lower the discharge pressure of the turbomolecular vacuum pumps 3a, 3b, 3c, ...3n to which they are fluidly connected, to a pressure below a pressure threshold below which a change in discharge pressure does not cause a change in suction pressure of the turbomolecular vacuum pump 3a, 3b, 3c, ...3n, including when a gas flow is injected at a predetermined maximum value into all process chambers 2a, 2b, 2c, ...2n located upstream of said turbomolecular vacuum pumps 3a, 3b, 3c, ...3n.

[0057] A fortiori, each of the two primary process vacuum pumps 5a, 5b is configured to be able to ensure at the discharge of the turbomolecular vacuum pumps 3a, 3b, 3c, ...3n to which they are fluidly connected, a pressure lower than a manufacturer's maximum pressure beyond which the vacuum pump can be damaged, generally between 1.5 mbar (150 Pa) and 3 mbar (300 Pa).

[0058] This can be better understood by reference to the illustrative graph in Figure 3 showing the suction pressure of a turbomolecular vacuum pump as a function of the discharge pressure for different values ​​of nitrogen flow to be pumped.

[0059] It is observed that for a nitrogen flow rate of 2000 sccm or less, the suction pressure of the turbomolecular vacuum pump remains unchanged regardless of the discharge pressure for discharge pressures below the pressure threshold of 1 mbar (100 Pa). This pressure threshold ensures identical operation upstream of the turbomolecular vacuum pump.

[0060] Equipment 1 further includes a primary service vacuum pump 8 fluidly connected to the process chambers 2a, 2b, 2c, ...2n of equipment 1 via respective third isolation valves 9a, 9b, 9c, ...9n (Figure 2).

[0061] The primary service vacuum pump 8 is a primary vacuum pump, as previously defined for the primary process vacuum pumps 5a and 5b. The primary process vacuum pumps 5a and 5b and the primary service vacuum pump 8 are configured to be able to lower the pressure in a process chamber 2a, 2b, 2c, ...2n from atmospheric pressure.

[0062] The third isolation valves 9a, 9b, 9c, ...9n are controllable for opening / closing. These are, for example, solenoid valves.

[0063] The primary service vacuum pump 8 ensures that at least one process chamber 2a, 2b, 2c, ...2n is evacuated from atmospheric pressure, i.e. after being vented, for example for maintenance, the turbomolecular vacuum pump 3a, 3b, 3c, ...3n being isolated from the process chamber 2a, 2b, 2c, ...2n by the first isolation valves 4a, 4b, 4c, ...4n. Indeed, the vacuuming of a process chamber 2a, 2b, 2c, ...2n from atmospheric pressure by at least one set of pairs of process vacuum pumps 5a, 5b by short-circuiting the turbomolecular vacuum pump 3a, 3b, 3c, ...3n, does not allow the discharge pressure of the turbomolecular vacuum pumps of equipment 1 to be kept below the pressure threshold which would not impact their pumping performance.

[0064] Equipment 1 also includes a control unit 11, such as a computer or electronic board, comprising one or more controllers or microcontrollers or processors and memory, to implement the steps of a manufacturing process for components, in particular semiconductors, LEDs or flat screens.

[0065] The control unit 11 is specifically configured to control the gas flows injected into the process chambers, the opening and closing of the doors of process chambers 2a, 2b, 2c, ...2n and of airlocks 100, 102 allowing the inflow and outflow of substrates. This control unit 11 can also be configured to control the opening and closing of the first isolation valves 4a, 4b, 4c, ...4n, the second isolation valves 6a, 6b, the third isolation valves 9a, 9b, 9c, ...9n and the fourth isolation valves 12a, 12b, 12c, ...12n as required.

[0066] The equipment 1 illustrated in Figure 1 thus comprises six process chambers 2a, 2b, 2c, ...2f, six turbomolecular vacuum pumps 3a, 3b, 3c, ...3f fluidly connected to a respective process chamber 2a, 2b, 2c, ...2f via six respective first isolation valves 4a, 4b, 4c, ...4f, a set of two primary process vacuum pumps 5a, 5b fluidly connected via respective second isolation valves 6a, 6b to a common pipeline 7 fluidly connected to the outlets of the six turbomolecular vacuum pumps 3a, 3b, 3c, ...3f of the equipment 1, and a primary service vacuum pump 8 fluidly connected to the process chambers 2a, 2b, 2c, ...2f of the equipment 1 via six third valves. insulation 9a, 9b, 9c, .9f respectively.

[0067] The process chambers 2a, 2b, 2c, ...2n, the airlocks 100, 102, the transfer chamber 101, the turbomolecular vacuum pumps 3a, 3b, 3c, ...3n, the first valves isolation valves 4a, 4b, 4c, ...4n and the third isolation valves 9a, 9b, 9c, ...9n mounted on the process chambers 2a, 2b, 2c, ...2n, are for example arranged in a cleanroom.

[0068] The primary process vacuum pumps 5a, 5b, the second isolation valves 6a, 6b and the primary service vacuum pump 8 can be arranged in a floor located below the cleanroom (called "basement" in English), with the common piping 7 connecting the cleanroom floor to the basement floor.

[0069] The common pipeline 7, which fluidly connects the outlets (discharge ports) of the turbomolecular vacuum pumps 3a, 3b, 3c, ...3n to the second isolation valves 6a, 6b, has, for example, a diameter of 160 mm.

[0070] The service pipe 10, which fluidly connects the pipes of the third isolation valves 9a, 9b, 9c, ...9n to the primary service vacuum pump 8, has, for example, a diameter of 40 mm or 50 mm.

[0071] Airlocks 100, 102 and transfer chamber 101 have their own respective pumping devices.

[0072] During substrate manufacturing steps, under normal operating conditions—that is, when the two primary process vacuum pumps 5a and 5b are functioning without failure—at least two primary process vacuum pumps 5a and 5b simultaneously draw air from the outlets of the turbomolecular vacuum pumps 3a, 3b, 3c, ..., 3n to which they are fluidly connected. The first isolation valves 4a, 4b, 4c, ..., 4n and the second isolation valves 6a and 6b are open, while the third isolation valves 9a, 9b, 9c, ..., 9n are closed.

[0073] In the event of a failure of one of the primary process vacuum pumps 5a, 5b, the second isolation valve 6a, 6b located upstream of the failed process vacuum pump 5a, 5b closes, isolating the failed process vacuum pump 5a, 5b. The other primary process vacuum pump 5a, 5b then provides the sole pumping capacity at the discharge of the turbomolecular vacuum pumps 3a, 3b, 3c ... 3n.

[0074] After venting one or more process chambers, the primary service vacuum pump 8 establishes a vacuum from atmospheric pressure. The first isolation valves 4a, 4b, 4c, ...4n of the relevant process chambers 2a, 2b, 2c, ...2n are closed, the third isolation valves 9a, 9b, 9c, ...9n of the relevant process chambers 2a, 2b, 2c, ...2n are opened, and the other third isolation valves 9a, 9b, 9c, ...9n remain closed, so as to lower the pressure in the relevant process chamber without affecting the discharge pressure of the other turbomolecular vacuum pumps 3a, 3b, 3c, ...3n. Then, when the pressure is sufficiently low in the process chamber 2a, 2b, 2c, ...2n, the third valves are closed. insulation 9a, 9b, 9c, ...9n concerned and we open the first insulation valves 4a, 4b, 4c, ...4n concerned.

[0075] The primary service vacuum pump 8 does not need to operate continuously like the two primary process vacuum pumps 5a and 5b. The primary service vacuum pump 8 can be stopped or can operate at reduced speed to limit its operating costs in electricity and fluids when not used for vacuuming.

[0076] Manufacturing equipment 1 is specifically configured to implement manufacturing steps in which the maximum value of the gas flow (nitrogen equivalent) injected into each process chamber 2a, 2b, 2c, ...2n is less than 3,000 sccm (5.07 Pa·m³). 3 / s), and for example on the order of 2,000 sccm (3.38 Pa.m 3 / s) by process chamber 2a, 2b, 2c, ...2n.

[0077] Each of the two primary process vacuum pumps 5a, 5b can be configured to be able to lower the discharge pressure of the turbomolecular vacuum pumps 3a, 3b, 3c, ...3n to which they are fluidly connected, to a pressure below a pressure threshold of 1 mbar (100 Pa) below which a change in discharge pressure does not cause a change in suction pressure of the turbomolecular vacuum pump 3a, 3b, 3c, ...3n, including when a gas flow of up to six times 2,000 sccm (3.38 Pa.m3 / s) is injected into all the process chambers 2a, 2b, 2c, ...2n located upstream of said turbomolecular vacuum pumps 3a, 3b, 3c, ...3n.

[0078] Manufacturing equipment 1 can be configured to perform etching or vacuum deposition of thin films such as physical vapor deposition (PVD).

[0079] Etching is a process that removes one or more layers of material from the surface of a substrate. Etching is a critical step in the manufacturing of components, particularly microelectronics, as each substrate may undergo numerous etching steps. Etching can be physical or chemical and relies on bombarding the surface to be etched with ions, usually from a plasma.

[0080] Plasma sputtering is a form of physical gas-phase deposition, more specifically vacuum evaporation, in which a metallic target cathode in a vacuum is bombarded by ions from the plasma. The sputtering process detaches atoms from the target, which are then deposited onto the substrate.

[0081] These cyclic manufacturing steps generally include a transfer step (called "idle" in English) where a substrate enters the process chamber 2a, 2b, 2c, 2n, followed by a process step proper where etching or deposition takes place. The cycle restarts with a new transfer step for the removal of the treated substrate and the entry of a new substrate to be treated. The transfer steps are carried out with a flow of neutral gas, usually nitrogen.

[0082] During the deposition, etching and transfer stages, the gas flows are relatively low, in particular on the order of 2,000 sccm (3.38 Pa.m3 / s) per process chamber, and therefore, these manufacturing processes are particularly suited to the invention.

[0083] Figure 4 shows a histogram of the discharge pressure of turbomolecular vacuum pumps that can be obtained during etching steps (called "active") and the discharge pressure of turbomolecular vacuum pumps in standby mode, as a function of the number of active turbomolecular vacuum pumps, of a six-chamber process equipment 1 2a, 2b, 2c, ...2f and an associated set of two primary process vacuum pumps 5a, 5b.

[0084] When two process chambers 2a, 2b, 2c, ...2n perform an etching step simultaneously with a respective gas flow to be pumped of 2000 sccm (3.38 Pa.m 3In the event of a failure of one of the primary process vacuum pumps 5a, 5b, the discharge pressure of each active turbomolecular vacuum pump is 0.47 mbar (47 Pa) and the discharge pressure of the four turbomolecular vacuum pumps in the standby process chambers is 0.26 mbar (26 Pa).

[0085] When four process chambers 2a, 2b, 2c, ...2n perform an etching step simultaneously with a respective gas flow to be pumped of 2000 sccm (3.38 Pa.m 3In the event of a failure of one of the primary process vacuum pumps 5a, 5b, the discharge pressure of each active turbomolecular vacuum pump is 0.55 mbar (55 Pa) and the discharge pressure of the two turbomolecular vacuum pumps in the standby process chambers is 0.34 mbar (34 Pa). In the event of a failure of one of the primary process vacuum pumps 5a, 5b, the discharge pressure of each active turbomolecular vacuum pump is 0.6 mbar (60 Pa) and the discharge pressure of the four turbomolecular vacuum pumps in the standby process chambers is 0.4 mbar (40 Pa).

[0086] When six process chambers 2a, 2b, 2c, ...2n perform an etching step simultaneously with a respective gas flow to be pumped of 2000 sccm (3.38 Pa.m 3 / s), the discharge pressure of each active turbomolecular vacuum pump is 0.62 mbar (62 Pa). In the event of a failure of one of the primary vacuum pumps of processes 5a, 5b, the discharge pressure of each active turbomolecular vacuum pump is 0.7 mbar (70 Pa).

[0087] It is observed that the discharge pressure of the turbomolecular vacuum pumps 3a, 3b, 3c, ...3f increases with the increasing number of active turbomolecular vacuum pumps, while remaining below the threshold pressure of 1 mbar (100 Pa), even with six process chambers 2a, 2b, 2c, ...2n operating simultaneously. Therefore, there are no upstream impacts in process chambers 2a, 2b, 2c, ...2n due to the reduction in the number of process vacuum pumps compared to the prior art. It is also observed that in the event of a failure of one of the two primary process vacuum pumps 5a, 5b, the discharge pressure of the active and standby turbomolecular vacuum pumps increases slightly, but not significantly.

[0088] This sharing of the primary vacuum pumps for processes 5a and 5b is possible, firstly, because, for pressures below a certain pressure threshold, a change in discharge pressure does not cause a change in suction pressure for the turbomolecular vacuum pumps 3a, 3b, 3c, ...3n. In other words, as long as the discharge pressure of the turbomolecular vacuum pumps 3g, 3h, 3i, ...3n is below the pressure threshold, there is no impact upstream of the turbomolecular vacuum pumps 3a, 3b, 3c, ...3n. The same pumping performance is expected for the turbomolecular vacuum pumps 3a, 3b, 3c, ...3n as if they had dedicated primary pumping.

[0089] The two primary process vacuum pumps 5a and 5b operate simultaneously, each configured to maintain the discharge pressures of the turbomolecular vacuum pumps 3a, 3b, 3c, ...3n below the pressure threshold. This also ensures that the vacuum is maintained in the process chambers 2a, 2b, 2c, ...2n during manufacturing steps in the event of a failure of one of the process vacuum pumps 5a or 5b, at least until the ongoing manufacturing steps are completed. This prevents damage to the substrates being manufactured in the process chambers 2a, 2b, 2c, ...2n.

[0090] Manufacturing equipment 1 is therefore less expensive to invest in and reduces the footprint (saving 40% to 50%) because it includes fewer primary vacuum pumps and reduces the number of pipes connecting the turbomolecular vacuum pumps 3a, 3b, 3c, ...3n from the cleanroom to the basement, as well as the number of electrical (boxes and electrical cables) and fluid connections required for the operation of the primary vacuum pumps. It is also less expensive to operate due to reduced electricity consumption (saving 30% to 60%), reduced purge gas consumption (saving at least 50%), and reduced cooling heat transfer fluid consumption (saving 50%) required for each primary vacuum pump. Equipment 1 is also more reliable than prior art equipment because it has of a backup primary vacuum pump in case of failure of a primary vacuum pump of processes 5a, 5b and therefore, prevents the loss of a substrate in production.

[0091] Figure 5 shows another example of implementation.

[0092] In this example, equipment 1 comprises eight process chambers 2a, 2b, 2c, ...2h, eight turbomolecular vacuum pumps 3a, 3b, 3c, ...3h fluidly connected to a respective process chamber 2a, 2b, 2c, ...2h via eight respective first isolation valves 4a, 4b, 4c, ...4h and two sets of two primary process vacuum pumps 5a, 5b.

[0093] Two primary process vacuum pumps 5a, 5b of a first set are fluidly connected via respective second isolation valves 6a, 6b to a common pipeline 7 fluidly connected to the outlets of four first turbomolecular vacuum pumps 3a, 3b, 3c, ...3f of equipment 1.

[0094] Two primary process vacuum pumps 5a, 5b of a second set are fluidly connected via respective second isolation valves 6a, 6b to a common pipeline 7 fluidly connected to the outlets of four second turbomolecular vacuum pumps 3g, 3h, 3i, ...3I of equipment 1.

[0095] A primary service vacuum pump 8 is fluidly connected to the eight process chambers 2a, 2b, 2c, ...2I of the equipment 1 via eight respective third isolation valves 9a, 9b, 9c, ...9I.

[0096] The transfer chamber 101 can include several robots 108 in the enclosure 107 to facilitate the distribution of substrates into the eight process chambers 2a, 2b, 2c, 2h.

Claims

DEMANDS

1. Manufacturing equipment (1), in particular for semiconductor components, LEDs or flat panel displays, comprising at least two process chambers (2a, 2b, 2c, ...2n) and as many turbomolecular vacuum pumps (3a, 3b, 3c, ...3n) fluidly connected to a respective process chamber (2a, 2b, 2c, ...2n) via respective first isolation valves (4a, 4b, 4c, ...4n), characterized in that it further comprises: - at least one set of two primary process vacuum pumps (5a, 5b), the inlets of said primary process vacuum pumps (5a, 5b) of the set being fluidly connected via respective second isolation valves (6a, 6b) to a common pipeline (7) fluidly connected to the outlets of the turbomolecular vacuum pumps (3a, 3b, 3c, ...3n), all the outlets of the turbomolecular vacuum pumps (3a, 3b, 3c, ...3n) being fluidly connected to the two primary process vacuum pumps (5a, 5b) of at least one set, and - a primary service vacuum pump (8) fluidly connected to the process chambers (2a, 2b, 2c, ...2n) of said equipment (1) via respective third isolation valves (9a, 9b, 9c, ...9n).

2. Equipment (1) according to the preceding claim, characterized in that the primary process vacuum pumps (5a, 5b) of the assembly are identical.

3. Equipment (1) according to any one of the preceding claims characterized in that each of the two primary process vacuum pumps (5a, 5b) is configured to be able to lower the discharge pressure of the turbomolecular vacuum pumps (3a, 3b, 3c, ...3n) to which they are fluidly connected, to a pressure below a pressure threshold below which a change in discharge pressure does not cause a change in suction pressure of the turbomolecular vacuum pump (3a, 3b, 3c, ...3n), including when a gas flow is injected at a predetermined maximum value into all the process chambers (2a, 2b, 2c, ...2n) located upstream of said turbomolecular vacuum pumps (3a, 3b, 3c, ...3n).

4. Equipment (1) according to any one of the preceding claims characterized in that a set of two primary process vacuum pumps (5a, 5b) is fluidly connected to two, three, four, five or six turbomolecular vacuum pumps (3a, 3b, 3c, ...3n).

5. Equipment (1) according to any one of the preceding claims characterized in that the process chambers (2a, 2b, 2c, ...2n), the turbomolecular vacuum pumps (3a, 3b, 3c, ...3n), the first isolation valves (4a, 4b, 4c, ...4n) and the third isolation valves (9a, 9b, ...9n) are arranged in a cleanroom and the The primary process vacuum pumps (5a, 5b), the second isolation valves (6a, 6b) and the primary service vacuum pump (8) are arranged on a floor located below the cleanroom.

6. Equipment (1) according to any one of the preceding claims characterized in that a service pipe (10) fluidly connecting the pipes of the third isolation valves (9a, 9b, 9c, ...9n) to the primary service vacuum pump (8) has a diameter of 40 mm or 50 mm and the common pipe (7) has a diameter of 160 mm.

7. Equipment (1) according to any one of the preceding claims, characterized in that it comprises: - at least two airlocks (100, 102), each configured to receive a substrate in a chamber (104, 105) of the airlock (100, 102) and lower the atmospheric pressure in the chamber (104, 105) to a predetermined transfer pressure and / or to receive a substrate at a predetermined transfer pressure in a chamber (104, 105) of the airlock (100, 102) and raise the pressure in the chamber (104, 105) to atmospheric pressure, - a transfer chamber (101) configured to transfer substrates at the predetermined transfer pressure from the airlock (100, 102) to a process chamber (2a, 2b, 2c, ...2n) and from a process chamber (2a, 2b, 2c, ...2n) to an airlock (100, 102).

8. Equipment (1) according to any one of the preceding claims characterized in that it comprises a control unit (11) configured to control the opening and closing of the first isolation valves (4a, 4b, 4c, ...4n), the second isolation valves (6a, 6b) and the third isolation valves (9a, 9b, 9c, ...9n).

9. Equipment (1) according to any one of the preceding claims, characterized in that it is configured to carry out manufacturing steps for which a maximum value of the gas flow injected into each process chamber (2a, 2b, 2c, ...2n) is less than 3,000 sccm (5.07 Pa·m³). 3 / s).

10. Equipment (1) according to any one of the preceding claims, characterized in that it is configured to carry out etching or vacuum deposition steps of thin films.

11. A manufacturing process characterized in that it is carried out in manufacturing equipment (1) according to any one of the preceding claims, wherein during the substrate manufacturing steps: - in a fault-free situation, the second isolation valves (6a, 6b) are open so that the at least two primary process vacuum pumps (5a, 5b) simultaneously draw from the outlet of the turbomolecular vacuum pumps (3a, 3b, 3c, ...3n) to which they are fluidly connected, - in the event of failure of one of the primary process vacuum pumps (5a, 5b), the second isolation valve (6a, 6b) located upstream of the failed process vacuum pump (5a, 5b) closes, isolating the failed process vacuum pump (5a, 5b), the other primary process vacuum pump (5a, 5b) alone ensuring the pumping at the discharge of the turbomolecular vacuum pumps (3a, 3b, 3c ...3n).

Images