Substrate support device, substrate processing apparatus, and base

Abstract

The substrate support device disclosed herein includes a base and a substrate support. The substrate support is disposed on the base. The base includes a plurality of parallel flow paths for a refrigerant. The plurality of parallel flow paths extend in parallel within the base between a single inlet and a single outlet.

Description

Substrate support, substrate processing apparatus, and base

[0001] SUMMARY Exemplary embodiments of the present disclosure relate to a substrate support, a substrate processing apparatus, and a pedestal.

[0002] A substrate processing apparatus such as a plasma processing apparatus is used for substrate processing. The substrate processing apparatus includes a chamber and a substrate support. The substrate support is disposed within the chamber. The substrate support includes a base and an electrostatic chuck. The electrostatic chuck is disposed on the base. The base includes a flow path for a coolant. Such a substrate processing apparatus is described in the following Patent Documents 1 and 2.

[0003] JP 2021-28960 A JP 2021-28961 A

[0004] The present disclosure provides techniques for increasing the cooling capacity of a substrate support for a substrate.

[0005] In one exemplary embodiment, a substrate support is provided. The substrate support includes a base and a substrate support. The substrate support is disposed on the base. The base includes a plurality of parallel flow paths for a coolant, the plurality of parallel flow paths extending in parallel within the base between a single inlet and a single outlet.

[0006] According to one exemplary embodiment, the cooling capacity of the substrate support for the substrate may be increased.

[0007] 6A is a diagram for explaining an example of the configuration of a plasma processing system; FIG. 6B is a diagram for explaining an example of the configuration of a capacitively coupled plasma processing apparatus; FIG. 6C is a longitudinal sectional view of a substrate support according to an exemplary embodiment; FIG. 6D is a cross-sectional view of a base taken along line IV-IV in FIG. 3; FIG. 6E is a partially enlarged cross-sectional view of a base according to an exemplary embodiment; FIG. 6H is a longitudinal sectional view of an outlet of a base according to an exemplary embodiment; and FIG. 6H is a longitudinal sectional view of an inlet of a base according to an exemplary embodiment.

[0008] Various exemplary embodiments will be described in detail below with reference to the drawings, in which the same or equivalent parts are designated by the same reference numerals.

[0009] FIG. 1 is a diagram illustrating an exemplary configuration of a plasma processing system. In one embodiment, the plasma processing system includes a plasma processing apparatus 1 and a control unit 2. The plasma processing system is an example of a substrate processing system, and the plasma processing apparatus 1 is an example of a substrate processing apparatus. The plasma processing apparatus 1 includes a plasma processing chamber 10, a substrate support 11, and a plasma generation unit 12. The plasma processing chamber 10 has a plasma processing space. The plasma processing chamber 10 also has at least one gas supply port for supplying at least one processing gas to the plasma processing space and at least one gas exhaust port for exhausting gas from the plasma processing space. The gas supply port is connected to a gas supply unit 20 (described later), and the gas exhaust port is connected to an exhaust system 40 (described later). The substrate support 11 is disposed in the plasma processing space and has a substrate support surface for supporting a substrate.

[0010] The plasma generating unit 12 is configured to generate plasma from at least one processing gas supplied into the plasma processing space. The plasma formed in the plasma processing space may be capacitively coupled plasma (CCP), inductively coupled plasma (ICP), electron-cyclotron-resonance plasma (ECR plasma), helicon wave plasma (HWP), or surface wave plasma (SWP). Various types of plasma generators may be used, including alternating current (AC) plasma generators and direct current (DC) plasma generators. In one embodiment, the AC signal (AC power) used in the AC plasma generator has a frequency in the range of 100 kHz to 10 GHz. Thus, AC signals include radio frequency (RF) signals and microwave signals. In one embodiment, the RF signal has a frequency in the range of 100 kHz to 150 MHz.

[0011] The control unit 2 processes computer-executable instructions that cause the plasma processing apparatus 1 to perform various processes described in this disclosure. The control unit 2 may be configured to control each element of the plasma processing apparatus 1 to perform various processes described herein. In one embodiment, part or all of the control unit 2 may be included in the plasma processing apparatus 1. The control unit 2 may include a processing unit 2a1, a storage unit 2a2, and a communication interface 2a3. The control unit 2 may be implemented by, for example, a computer 2a. The processing unit 2a1 may be configured to read a program from the storage unit 2a2 and execute the read program to perform various control operations. This program may be stored in the storage unit 2a2 in advance or may be acquired via a medium when needed. The acquired program is stored in the storage unit 2a2 and read from the storage unit 2a2 by the processing unit 2a1 for execution. The medium may be various storage media readable by the computer 2a or a communication line connected to the communication interface 2a3. The processing unit 2a1 may be a CPU (Central Processing Unit). The storage unit 2a2 may include a random access memory (RAM), a read-only memory (ROM), a hard disk drive (HDD), a solid state drive (SSD), or a combination thereof. The communication interface 2a3 may communicate with the plasma processing apparatus 1 via a communication line such as a local area network (LAN).

[0012] The following describes a configuration example of a capacitively coupled plasma processing apparatus as an example of the plasma processing apparatus 1. Fig. 2 is a diagram for explaining a configuration example of a capacitively coupled plasma processing apparatus.

[0013] The capacitively coupled plasma processing apparatus 1 includes a plasma processing chamber 10, a gas supply 20, a power supply 30, and an exhaust system 40. The plasma processing apparatus 1 also includes a substrate support 11 and a gas inlet. The gas inlet is configured to introduce at least one process gas into the plasma processing chamber 10. The gas inlet includes a showerhead 13. The substrate support 11 is disposed within the plasma processing chamber 10. The showerhead 13 is disposed above the substrate support 11. In one embodiment, the showerhead 13 forms at least a portion of the ceiling of the plasma processing chamber 10. The plasma processing chamber 10 has a plasma processing space 10s defined by the showerhead 13, a sidewall 10a of the plasma processing chamber 10, and the substrate support 11. The plasma processing chamber 10 is grounded. The showerhead 13 and the substrate support 11 are electrically insulated from the housing of the plasma processing chamber 10.

[0014] The substrate support 11 includes a main body 111 and a ring assembly 112. The main body 111 has a central region 111a for supporting a substrate W and an annular region 111b for supporting the ring assembly 112. A wafer is an example of a substrate W. The annular region 111b of the main body 111 surrounds the central region 111a of the main body 111 in a plan view. The substrate W is disposed on the central region 111a of the main body 111, and the ring assembly 112 is disposed on the annular region 111b of the main body 111 so as to surround the substrate W on the central region 111a of the main body 111. Therefore, the central region 111a is also called a substrate support surface for supporting the substrate W, and the annular region 111b is also called a ring support surface for supporting the ring assembly 112.

[0015] In one embodiment, the main body 111 includes a base 1110 and an electrostatic chuck 1111. The base 1110 includes a conductive member. The conductive member of the base 1110 can function as a lower electrode. The electrostatic chuck 1111 is disposed on the base 1110. The electrostatic chuck 1111 includes a ceramic member 1111a and an electrostatic electrode 1111b disposed within the ceramic member 1111a. The ceramic member 1111a has a central region 111a. In one embodiment, the ceramic member 1111a also has an annular region 111b. Note that the annular region 111b may also be provided by another member surrounding the electrostatic chuck 1111, such as an annular electrostatic chuck or an annular insulating member. In this case, the ring assembly 112 may be disposed on the annular electrostatic chuck or the annular insulating member, or may be disposed on both the electrostatic chuck 1111 and the annular insulating member. Furthermore, at least one RF / DC electrode coupled to an RF power supply 31 and / or a DC power supply 32, which will be described later, may be disposed within the ceramic member 1111a. In this case, the at least one RF / DC electrode functions as a lower electrode. When a bias RF signal and / or a DC signal, which will be described later, is supplied to the at least one RF / DC electrode, the RF / DC electrode is also called a bias electrode. Note that the conductive member of the base 1110 and the at least one RF / DC electrode may function as multiple lower electrodes. Furthermore, the electrostatic electrode 1111b may function as a lower electrode. Therefore, the substrate support 11 includes at least one lower electrode.

[0016] The ring assembly 112 includes one or more annular members. In one embodiment, the one or more annular members include one or more edge rings and at least one cover ring. The edge rings are formed of a conductive or insulating material, and the cover rings are formed of an insulating material.

[0017] The substrate support 11 may also include a temperature adjustment module configured to adjust at least one of the electrostatic chuck 1111, the ring assembly 112, and the substrate to a target temperature. The temperature adjustment module may include a heater, a heat transfer medium, a flow passage 1110a, or a combination thereof. A heat transfer fluid such as brine or a gas flows through the flow passage 1110a. In one embodiment, the flow passage 1110a is formed in the base 1110, and one or more heaters are disposed in the ceramic member 1111a of the electrostatic chuck 1111. The substrate support 11 may also include a heat transfer gas supply configured to supply a heat transfer gas to a gap between the backside of the substrate W and the central region 111a.

[0018] The showerhead 13 is configured to introduce at least one process gas from the gas supply unit 20 into the plasma processing space 10s. The showerhead 13 has at least one gas supply port 13a, at least one gas diffusion chamber 13b, and multiple gas inlets 13c. The process gas supplied to the gas supply port 13a passes through the gas diffusion chamber 13b and is introduced into the plasma processing space 10s from the multiple gas inlets 13c. The showerhead 13 also includes at least one upper electrode. In addition to the showerhead 13, the gas inlet may also include one or more side gas injectors (SGIs) attached to one or more openings formed in the sidewall 10a.

[0019] The gas supply unit 20 may include at least one gas source 21 and at least one flow controller 22. In one embodiment, the gas supply unit 20 is configured to supply at least one process gas from a corresponding gas source 21 to the showerhead 13 via a corresponding flow controller 22. Each flow controller 22 may include, for example, a mass flow controller or a pressure-controlled flow controller. Additionally, the gas supply unit 20 may include at least one flow modulation device that modulates or pulses the flow rate of the at least one process gas.

[0020] The power supply 30 includes an RF power supply 31 coupled to the plasma processing chamber 10 via at least one impedance matching circuit. The RF power supply 31 is configured to supply at least one RF signal (RF power) to at least one lower electrode and / or at least one upper electrode. This generates a plasma from at least one processing gas supplied to the plasma processing space 10s. Therefore, the RF power supply 31 can function as at least a part of the plasma generation unit 12. Furthermore, by supplying a bias RF signal to the at least one lower electrode, a bias potential is generated on the substrate W, thereby attracting ion components in the formed plasma to the substrate W.

[0021] In one embodiment, the RF power supply 31 includes a first RF generating unit 31a and a second RF generating unit 31b. The first RF generating unit 31a is coupled to at least one lower electrode and / or at least one upper electrode via at least one impedance matching circuit and is configured to generate a source RF signal (source RF power) for plasma generation. In one embodiment, the source RF signal has a frequency in the range of 10 MHz to 150 MHz. In one embodiment, the first RF generating unit 31a may be configured to generate multiple source RF signals having different frequencies. The generated one or more source RF signals are supplied to at least one lower electrode and / or at least one upper electrode.

[0022] The second RF generator 31b is coupled to at least one lower electrode via at least one impedance matching circuit and is configured to generate a bias RF signal (bias RF power). The frequency of the bias RF signal may be the same as or different from the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency lower than the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency in the range of 100 kHz to 60 MHz. In one embodiment, the second RF generator 31b may be configured to generate multiple bias RF signals having different frequencies. The generated one or more bias RF signals are supplied to at least one lower electrode. In various embodiments, at least one of the source RF signal and the bias RF signal may be pulsed.

[0023] The power supply 30 may also include a DC power supply 32 coupled to the plasma processing chamber 10. The DC power supply 32 includes a first DC generator 32a and a second DC generator 32b. In one embodiment, the first DC generator 32a is connected to the at least one lower electrode and configured to generate a first DC signal. The generated first DC signal is applied to the at least one lower electrode. In one embodiment, the second DC generator 32b is connected to the at least one upper electrode and configured to generate a second DC signal. The generated second DC signal is applied to the at least one upper electrode.

[0024] In various embodiments, the first and second DC signals may be pulsed. In this case, a sequence of voltage pulses is applied to at least one lower electrode and / or at least one upper electrode. The voltage pulses may have a rectangular, trapezoidal, triangular, or combination thereof pulse waveform. In one embodiment, a waveform generator for generating the sequence of voltage pulses from the DC signal is connected between the first DC generator 32a and at least one lower electrode. Thus, the first DC generator 32a and the waveform generator constitute a voltage pulse generator. When the second DC generator 32b and the waveform generator constitute a voltage pulse generator, the voltage pulse generator is connected to at least one upper electrode. The voltage pulses may have either positive or negative polarity. Furthermore, the sequence of voltage pulses may include one or more positive voltage pulses and one or more negative voltage pulses within one period. The first and second DC generating units 32a and 32b may be provided in addition to the RF power supply 31, or the first DC generating unit 32a may be provided instead of the second RF generating unit 31b.

[0025] The exhaust system 40 may be connected to, for example, a gas exhaust port 10e provided at the bottom of the plasma processing chamber 10. The exhaust system 40 may include a pressure regulating valve and a vacuum pump. The pressure in the plasma processing space 10s is regulated by the pressure regulating valve. The vacuum pump may include a turbomolecular pump, a dry pump, or a combination thereof.

[0026] Reference will now be made to Figures 3 to 5. Figure 3 is a longitudinal cross-sectional view of a substrate support according to one exemplary embodiment. Figure 4 is a cross-sectional view of a base taken along line IV-IV in Figure 3. Figure 5 is a partially enlarged cross-sectional view of a base according to one exemplary embodiment. The substrate support 11 (i.e., the substrate support) shown in Figures 3 to 5 can be used in the plasma processing apparatus 1.

[0027] The substrate support 11 includes a base 1110 and a substrate support. The base 1110 may have a generally disk-like shape and may be made of a metal such as aluminum. The substrate support is provided on the base 1110. The substrate W is placed on the substrate support. In one embodiment, the substrate support is an electrostatic chuck 1111. The substrate support or the electrostatic chuck 1111 may be bonded to the upper surface 11u of the base 1110 using an adhesive 1112.

[0028] The base 1110 includes a plurality of parallel flow paths 11p for the coolant. The plurality of parallel flow paths 11p extend in parallel within the base 1110 between a single inlet 11i and a single outlet 11o. The single inlet 11i and / or the single outlet 11o may be provided within the base 1110. Alternatively, the single inlet 11i and / or the single outlet 11o may be provided external to the substrate support 11.

[0029] The coolant is supplied to the plurality of parallel flow paths 11p through a single inlet 11i from a chiller unit provided outside the chamber 10. The coolant flows through the plurality of parallel flow paths 11p and is returned to the chiller unit via a single outlet 11o.

[0030] In the substrate support 11, the coolant flow paths are parallelized between the single inlet 11i and the single outlet 11o by multiple parallel flow paths 11p within the base 1110, so the area of ​​the boundary surface of the base 1110 that defines the flow paths is large. Therefore, the substrate support 11 has a high heat removal capacity and a high cooling capacity for the substrate W placed thereon. Furthermore, compared to a configuration with a single flow path within the base 1110, the substrate support 11 can cool the substrate W to a low temperature even with a slow coolant flow rate. Furthermore, the substrate support 11 can reduce the flow rate of the parallel flow paths 11p, so it is possible to suppress coolant separation and temperature singularities.

[0031] 3 and 5, the cross-sectional shape of each of the multiple parallel flow paths 11p may be rectangular. The multiple parallel flow paths 11p may extend in parallel along one another within the base 1110. The multiple parallel flow paths 11p may extend in the circumferential direction around the central axis AX of the base 1110, and then further extend in the circumferential direction via turning portions 11t extending in a direction intersecting the circumferential direction. The multiple parallel flow paths 11p may extend in the circumferential direction around the central axis AX of the base 1110, and then further extend in the circumferential direction via turning portions 11t extending in a direction intersecting the circumferential direction, repeatedly.

[0032] As shown in FIG. 5 , the height Hp of each of the parallel flow paths 11p may be 0.5 mm or more and 30 mm or less. The width Wp of each of the parallel flow paths 11p may be 0.5 mm or more and 10 mm or less. The thickness Hu of the base 1110 between the upper end of each of the parallel flow paths 11p and the upper surface 11u of the base 1110 may be 0.01 mm or more and 20 mm or less. The thickness Ww (i.e., width) of the partition wall 11w between adjacent pairs of the parallel flow paths 11p may be 0.1 mm or more and 10 mm or less. Furthermore, the aspect ratio of each of the parallel flow paths 11p, i.e., Hp / Wp, may be 2 or more and 10 or less. The aspect ratio may be 6 or less. Furthermore, the number of the parallel flow paths 11p may be 2 or more and 15 or less.

[0033] In one embodiment, the base 1110 may include at least one junction 11j, as shown in FIG. 4 . The at least one junction 11j joins multiple parallel flow paths 11p between a single inlet 11i and a single outlet 11o. The at least one junction 11j reduces the difference in conductance among the multiple parallel flow paths 11p compared to a configuration in which no junction 11j is provided between the single inlet 11i and the single outlet 11o. As a result, the difference in flow velocity within the parallel flow paths 11p is reduced, and the time for the coolant to recover the plasma heat input is equalized, thereby reducing the possibility of coolant boiling and / or temperature variations.

[0034] In one embodiment, at least one confluence portion 11j may be located in the turn portion 11t. The base 1110 may further include a flow path non-forming region 11n. The non-forming region 11n is located adjacent to the turn portion 11t in the circumferential direction relative to the central axis AX and extends in the circumferential direction. The non-forming region 11n, which does not include a flow path for the coolant, has low heat dissipation. Furthermore, the confluence portion 11j has a small boundary surface area defining the flow path, resulting in low heat dissipation. Therefore, according to this embodiment, the temperature difference between the confluence portion 11j and the adjacent non-forming region 11n in the circumferential direction is reduced, thereby improving the temperature uniformity of the substrate support portion 11 and the substrate W in the circumferential direction.

[0035] Reference will now be made to FIGS. 6A and 6B. FIG. 6A is a longitudinal cross-sectional view showing an outlet of a base according to an exemplary embodiment, and FIG. 6B is a longitudinal cross-sectional view showing an inlet of a base according to an exemplary embodiment. In one embodiment, as shown in FIG. 6A, the single outlet 11o may extend upward (from the lower surface 11b of the base 1110 toward the upper surface 11u of the base 1110) within the base 1110. The base 1110 may include at least one rib 11or. The at least one rib 11or extends continuously with the partition walls 11w of the multiple parallel flow paths 11p above the single outlet 11o and partially constitutes the upper surface 11u of the base 1110. The at least one rib 11or increases the wall area above the single outlet 11o. This suppresses temperature rise of the substrate support 11 and the substrate W above the single outlet 11o.

[0036] 6B, the single inlet 11i may extend upward within the base 1110. The base 1110 may include at least one rib 11ir. The at least one rib 11ir extends continuously to the partition walls 11w of the multiple parallel flow paths 11p above the single inlet 11i and partially constitutes the upper surface 11u of the base 1110. The at least one rib 11ir increases the wall area above the single inlet 11i. Therefore, a temperature rise of the substrate support 11 and the substrate W above the single inlet 11i is suppressed.

[0037] Although various exemplary embodiments have been described above, the present invention is not limited to the above-described exemplary embodiments, and various additions, omissions, substitutions, and modifications may be made. Furthermore, elements in different embodiments may be combined to form other embodiments.

[0038] 4, the single inlet 11i is provided in the center of the base 1110, and the single outlet 11o is provided on the periphery of the base 1110. However, the single inlet 11i and the single outlet 11o may be formed in any region of the base 1110. Furthermore, the above-described substrate support 11 may be employed in substrate processing apparatuses other than the plasma processing apparatus 1.

[0039] Various exemplary embodiments included in the present disclosure are now described in [E1] to [E19] below.

[0040] [E1] A substrate support comprising: a base; and a substrate support on said base, said base including a plurality of parallel flow paths for a coolant extending in parallel within said base between a single inlet and a single outlet.

[0041] [E2] The substrate support according to E1, wherein the plurality of parallel flow paths extend in parallel along one another within the base.

[0042] [E3] The substrate support according to E2, wherein the plurality of parallel flow paths extend in a circumferential direction around a central axis of the base and further extend in the circumferential direction via a turning portion extending in a direction intersecting the circumferential direction.

[0043] [E4] The substrate support according to E3, wherein the base further includes at least one junction that joins the plurality of parallel flow paths between the single inlet and the single outlet.

[0044] [E5] The substrate support according to E4, wherein the at least one junction is disposed at the turning portion.

[0045] [E6] The substrate support according to E5, wherein the base includes a flow path non-forming region adjacent to the folded portion in the circumferential direction relative to the central axis.

[0046] [E7] The substrate support according to any one of E1 to E6, wherein the base includes the single inlet, the single inlet extends upward within the base, and the base includes at least one rib that extends continuously above the single inlet to the partition walls of the plurality of parallel flow paths and partially constitutes an upper surface of the base.

[0047] [E8] The substrate support according to any one of E1 to E7, wherein the base includes the single outlet, the single outlet extending upward within the base, and the base includes at least one rib extending continuously above the single outlet to the partition walls of the plurality of parallel flow paths and partially constituting an upper surface of the base.

[0048] [E9] The substrate support of any one of E1 to E8, wherein the substrate support is an electrostatic chuck.

[0049] [E10] A substrate processing apparatus comprising: a chamber; and a substrate support according to any one of E1 to E9, disposed in the chamber.

[0050] [E11] The substrate processing apparatus according to E10, further comprising a plasma generating unit configured to generate plasma from a gas in the chamber.

[0051] [E12] A base for a substrate support of a substrate processing apparatus, comprising: a single inlet for a coolant; a single outlet for said coolant; and a plurality of parallel flow paths extending in parallel within said base between said single inlet and said single outlet.

[0052] [E13] The base according to E12, wherein the plurality of parallel flow paths extend in parallel along one another within the base.

[0053] [E14] The base according to E13, wherein the plurality of parallel flow paths extend in a circumferential direction around a central axis of the base, and further extend in the circumferential direction via a folded portion extending in a direction intersecting the circumferential direction.

[0054] [E15] The base according to E14, further comprising at least one junction that joins the plurality of parallel flow paths between the single inlet and the single outlet.

[0055] [E16] The base according to E15, wherein the at least one junction is disposed at the turning portion.

[0056] [E17] The base according to E16, wherein the base includes a flow path non-forming region adjacent to the folded portion in the circumferential direction relative to the central axis.

[0057] [E18] The base according to any one of E12 to E17, wherein the single inlet extends upward within the base, and the base includes at least one rib that extends continuously above the single inlet to the partition walls of the plurality of parallel flow paths and partially constitutes an upper surface of the base.

[0058] [E19] The base according to any one of E12 to E18, wherein the single outlet extends upward within the base, and the base includes at least one rib that extends continuously above the single outlet to the partition walls of the plurality of parallel flow paths and partially constitutes an upper surface of the base.

[0059] From the foregoing, it will be understood that various embodiments of the present disclosure have been described herein for purposes of illustration, and that various modifications may be made without departing from the scope and spirit of the present disclosure. Accordingly, the various embodiments disclosed herein are not intended to be limiting, with the true scope and spirit being indicated by the appended claims.

[0060] 1...plasma processing apparatus, 10...chamber, 12...plasma generating section, 11...substrate support section, 1110...base, 1111...electrostatic chuck, 11i...inlet, 11o...outlet, 11p...parallel flow path

Claims

1. A substrate support comprising: a base; and a substrate support on said base, said base including a plurality of parallel flow paths for a coolant extending in parallel within said base between a single inlet and a single outlet.

2. The substrate support of claim 1, wherein the plurality of parallel flow paths extend parallel to one another within the base.

3. A substrate support as described in claim 2, wherein the plurality of parallel flow paths extend in a circumferential direction around the central axis of the base and further extend in the circumferential direction via a folded portion extending in a direction intersecting the circumferential direction.

4. The substrate support of claim 3, wherein said base further comprises at least one junction that joins said plurality of parallel flow paths between said single inlet and said single outlet.

5. The substrate support according to claim 4, wherein the at least one junction is disposed at the folded portion.

6. The substrate support according to claim 5, wherein the base includes a flow path non-forming region adjacent to the folded portion in the circumferential direction relative to the central axis.

7. A substrate support according to claim 6, wherein the base includes the single inlet, the single inlet extending upward within the base, and the base includes at least one rib extending continuously above the single inlet to the partition walls of the plurality of parallel flow paths and partially constituting an upper surface of the base.

8. The substrate support according to claim 6, wherein the base includes the single outlet, the single outlet extending upward within the base, and the base includes at least one rib extending continuously above the single outlet to the partition walls of the plurality of parallel flow paths and partially constituting an upper surface of the base.

9. The substrate support of any one of claims 1 to 8, wherein the substrate support is an electrostatic chuck.

10. A substrate processing apparatus comprising: a chamber; and a substrate support according to any one of claims 1 to 8, disposed in the chamber.

11. The substrate processing apparatus of claim 10, further comprising a plasma generating unit configured to generate a plasma from a gas within the chamber.

12. A base for a substrate support in a substrate processing apparatus, the base including: a single inlet for a coolant; a single outlet for said coolant; and a plurality of parallel flow paths extending in parallel within said base between said single inlet and said single outlet.

13. The base of claim 12, wherein said plurality of parallel flow paths extend parallel to one another within said base.

14. The base according to claim 13, wherein the plurality of parallel flow paths extend in a circumferential direction around the central axis of the base and further extend in the circumferential direction via a folded portion extending in a direction intersecting the circumferential direction.

15. The base of claim 14, further comprising at least one junction that joins said plurality of parallel flow paths between said single inlet and said single outlet.

16. The base according to claim 15, wherein said at least one junction is disposed at said folded portion.

17. The base according to claim 16, wherein the base includes a non-flow-path region adjacent to the folded portion in the circumferential direction relative to the central axis.

18. The base according to claim 17, wherein the single inlet extends upward within the base, and the base includes at least one rib extending continuously above the single inlet to the partition walls of the plurality of parallel flow paths and partially constituting the upper surface of the base.

19. The base according to claim 17, wherein the single outlet extends upward within the base, and the base includes at least one rib extending continuously above the single outlet to the partition walls of the plurality of parallel flow paths and partially constituting the upper surface of the base.

Images