Electronic device and electronic device control method

Abstract

The purpose of the present invention is to provide a method for forming an electronic device on a substrate, and an electronic device formed thereby, the method comprising the steps of: spraying a gas containing a Group III element onto the substrate; forming a first layer containing a Group III-V element by forming a first plasma containing a nitrogen element while spraying a gas containing a Group V element onto the substrate; and forming a second plasma containing a nitrogen element on the first layer containing the Group III-V element, wherein the first plasma does not contain hydrogen atoms.

Description

Electronic devices and methods for forming electronic devices

[0001] The present invention relates to an electronic device and a method for forming an electronic device.

[0002] As the size of electronic components used in various electronic devices such as semiconductors and displays continues to decrease and the demand for high efficiency increases, expectations for electronic components using materials containing group III-V elements are increasing.

[0003] Materials containing Group III-V elements are attracting attention as innovative materials for semiconductors and displays. Compared to previously used silicon (Si), these materials offer various advantages, including higher power efficiency, stable operation at high temperatures, and low resistance.

[0004] Meanwhile, in the past, chemical vapor deposition (CVD) or metal-organic chemical vapor deposition (MOCVD) was used to form a layer containing a material containing a group III-V element, but in this case, carbon impurities are formed at the interface or inside the layer containing a material containing a group III-V element, which may become a factor that inhibits the desired electrical conductivity characteristics.

[0005] The present invention is designed to overcome the aforementioned problems, and aims to provide an electronic device and a method for forming an electronic device that minimizes the concentration of carbon impurities between a substrate and a first layer, and has high electrical conductivity characteristics while forming the first layer at a low temperature and with a thin thickness.

[0006] In order to achieve the above object, the present invention provides a method for forming an electronic device on a substrate, comprising: a step of spraying a gas containing a group III element onto the substrate; a step of forming a first plasma containing a nitrogen element while spraying a gas containing a group V element onto the substrate to form a first layer containing a group III-V element; and a step of forming a second plasma containing a nitrogen element on the first layer containing a group III-V element, wherein the first plasma does not contain hydrogen atoms.

[0007] The above group III element may contain one or more elements of gallium (Ga), aluminum (Al), and indium (In), and the above group V element may contain one or more elements of nitrogen (N), phosphorus (P), arsenic (As), antimony (Sb), and oxygen (O).

[0008] The first layer containing the group III-V element may include GaN.

[0009] The above first plasma can be formed by further including one of argon gas, helium gas, and germanium gas.

[0010] The second plasma can be formed by further including one of hydrogen gas, argon gas, helium gas, ammonia, and germanium gas.

[0011] The substrate may include one or more of silicon, glass, sapphire, silicon oxide, and silicon nitride.

[0012] An additional lower layer is provided on the substrate, and the lower layer may include one or more materials selected from the group consisting of a silicon nitride layer (SiN), a titanium nitride layer (TiN), a tungsten nitride layer (WN), a ruthenium nitride layer (RuN), a copper nitride layer (CuN), an aluminum nitride layer (AlN), a silicon oxide layer (SiO), a titanium oxide layer (TiO), a tungsten oxide layer (WO), a ruthenium oxide layer (RuO), a ruthenium oxynitride layer (RuON), and a copper oxide layer (CuO).

[0013] The temperature of the above substrate may be 50°C or higher and 500°C or lower.

[0014] The thickness of the first layer containing the above III-V group element may be 1 Å or more and 25 Å or less.

[0015] The method may further include forming a third plasma with one or more of hydrogen gas, argon gas, helium gas, ammonia, and germanium gas between the step of injecting a gas containing the group III element and the step of forming a first plasma containing a nitrogen element while injecting a gas containing the group V element to form a first layer containing a group III-V element.

[0016] The present invention provides an electronic device comprising a substrate; and a first layer provided on the substrate and containing a group III-V element, wherein the first layer containing the group III-V element is formed of a single crystal.

[0017] The first layer containing the above III-V group element may be formed of a hexagonal single crystal.

[0018] The thickness of the first layer containing the above III-V group element may be 1 Å or more and 25 Å or less.

[0019] The substrate may include one or more of silicon, glass, sapphire, silicon oxide, and silicon nitride.

[0020] An underlying film is additionally provided between the substrate and the first layer containing the III-V group element, and the underlying film may be formed by including one or more materials from among a silicon nitride film (SiN), a titanium nitride film (TiN), a tungsten nitride film (WN), a ruthenium nitride film (RuN), a copper nitride film (CuN), an aluminum nitride film (AlN), a silicon oxide film (SiO), a titanium oxide film (TiO), a tungsten oxide film (WO), a ruthenium oxide film (RuO), a ruthenium oxynitride film (RuON), and a copper oxide film (CuO).

[0021] The above lower layer can be in contact with the first layer containing the group III-V element.

[0022] The above substrate can be in contact with a first layer containing the group III-V element.

[0023] Carbon contained within the first layer containing the above III-V group element may be 0.001 at% or more and 1 at% or less.

[0024] According to the present invention as described above, the following effects are achieved.

[0025] According to one embodiment of the present invention, since a group III-V compound layer, such as a gallium nitride layer, is formed using atomic layer deposition (ALD) and plasma, carbon impurities of the source material can be minimized within the gallium nitride layer or at the interface. Accordingly, defects caused by carbon impurities can be minimized, thereby realizing electronic devices with improved electrical conductivity characteristics.

[0026] According to one embodiment of the present invention, a single crystal gallium nitride layer can be formed by repeatedly performing the steps of spraying a first source material on a substrate, spraying a first reactant material and forming a first plasma, and forming a second plasma to form a group III-V compound layer such as a gallium nitride layer.

[0027] According to one embodiment of the present invention, by repeatedly performing the steps of spraying a first source material on a substrate, spraying a first reactant material and forming a first plasma, and forming a second plasma, a III-V group compound layer such as a gallium nitride layer is formed, thereby controlling the content of carbon within the gallium nitride layer to be almost non-existent or non-existent, thereby implementing an electronic device having excellent electrical conductivity characteristics.

[0028] According to one embodiment of the present invention, by repeatedly performing the steps of spraying a first source material on a substrate, spraying a first reactant material and forming a first plasma, and forming a second plasma, a III-V group compound layer such as a gallium nitride layer is formed, thereby enabling implementation of an electronic device having high electrical conductivity characteristics even at a relatively low temperature and with a thin thickness.

[0029] The effects of the present invention are not limited to the effects mentioned above, and other effects not mentioned will be clearly understood by those skilled in the art from the description below.

[0030] FIG. 1A is a schematic cross-sectional view of an electronic device according to one embodiment of the present invention.

[0031] FIG. 1b is a TEM photograph of an electronic device according to one embodiment of the present invention.

[0032] FIG. 2 is a schematic flowchart for forming a first layer of an electronic device according to one embodiment of the present invention.

[0033] FIG. 3 is a schematic diagram showing an embodiment of a substrate processing device in which an electronic device forming method according to one embodiment of the present invention is performed.

[0034] FIG. 4 is a schematic diagram showing another embodiment of a substrate processing device in which an electronic device forming method according to one embodiment of the present invention is performed.

[0035] FIG. 5 is a schematic bottom view according to one embodiment, showing an enlarged view of the injection part based on part A of FIG. 4.

[0036] FIG. 6 is a schematic cross-sectional view according to one embodiment, showing an enlarged view of the injection unit based on part A of FIG. 4.

[0037] Fig. 7 is a schematic cross-sectional view according to another embodiment, showing an enlarged view of the injection part based on part A of Fig. 4.

[0038] Figure 8 is a schematic plan view of a spray unit of a substrate processing device according to one embodiment of the present invention.

[0039] The advantages and features of the present invention, and the methods for achieving them, will become clearer with reference to the embodiments described in detail below together with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below, but may be implemented in various different forms. These embodiments are provided solely to ensure that the disclosure of the present invention is complete and to fully inform those skilled in the art of the scope of the invention, and the present invention is defined solely by the scope of the claims.

[0040] The shapes, sizes, ratios, angles, numbers, etc. disclosed in the drawings for explaining embodiments of the present invention are illustrative and are not limited to the matters illustrated in the drawings. Like reference numerals refer to like components throughout the specification. In addition, in describing the present invention, if a detailed description of a related known technology is judged to unnecessarily obscure the gist of the present invention, the detailed description thereof will be omitted. When the terms “includes,” “has,” and “consists of” are used in this specification, other parts may be added unless “only” is used. When a component is expressed in the singular, it includes a case where the plural is included unless there is a specifically explicit description.

[0041] When interpreting a component, it is interpreted as including the error range even if there is no separate explicit description.

[0042] When describing a positional relationship, for example, when the positional relationship between two parts is described as 'on top of', 'upper part of', 'lower part of', 'next to', etc., one or more other parts may be located between the two parts, unless 'right away' or 'directly' is used.

[0043] When describing a temporal relationship, for example, when the temporal continuity is described as 'after', 'following', 'next to', 'before', etc., it can also include cases where it is not continuous, as long as 'right away' or 'directly' is not used.

[0044] While terms like "first" and "second" are used to describe various components, these components are not limited by these terms. These terms are merely used to distinguish one component from another. Therefore, a "first" component referred to below may also be a "second" component within the technical scope of the present invention.

[0045] The features of each of the various embodiments of the present invention can be partially or wholly combined or combined with each other, and various technical connections and operations are possible, and each embodiment can be implemented independently of each other or implemented together in a related relationship.

[0046] Hereinafter, a preferred embodiment of the present invention will be described in detail with reference to the drawings.

[0047] FIG. 1a is a schematic cross-sectional view of an electronic device according to one embodiment of the present invention, and FIG. 1b is a TEM and FFT photograph of the electronic device according to one embodiment of the present invention.

[0048] As can be seen in FIG. 1A, an electronic device according to an embodiment of the present invention comprises a substrate (100) and a first layer (110). In FIG. 1A, only the substrate (100) and the first layer (110) are illustrated, but the present invention is not limited thereto. As another example, an electronic device according to an embodiment of the present invention may comprise a substrate (100), a lower layer provided on the substrate (100), and a first layer (110) provided on the lower layer.

[0049] The substrate (100) may include one or more materials selected from the group consisting of silicon, glass, sapphire, silicon oxide, and silicon nitride, but is not limited thereto. For example, the substrate (100) may be a semiconductor wafer, for example, a silicon wafer (Si).

[0050] When the lower film is provided between the substrate (100) and the first layer (110), the lower film may include one or more materials from among a silicon nitride film (SiN), a titanium nitride film (TiN), a tungsten nitride film (WN), a ruthenium nitride film (RuN), a copper nitride film (CuN), an aluminum nitride film (AlN), a silicon oxide film (SiO), a titanium oxide film (TiO), a tungsten oxide film (WO), a ruthenium oxide film (RuO), a ruthenium oxynitride film (RuON), and a copper oxide film (CuO).

[0051] The above first layer (110) is formed on the substrate (100).

[0052] The first layer (110) is formed by including a material containing a group III-V element. In this case, the material containing the group III-V element may be formed on the substrate (100) using an atomic layer deposition (ALD) method. For example, according to one embodiment of the present invention, since gallium nitride (GaN) is formed as the first layer (110) using the atomic layer deposition (ALD), the content of carbon present in the first layer (110) may be 0.001 at% or more and 1 at% or less. Most preferably, carbon is not contained in the first layer (110). As another example, the first layer (110) may include at least one of gallium oxide (GaO) and gallium nitride (GaN).

[0053] Furthermore, according to one embodiment of the present invention, since the first layer (110) is formed using an atomic layer deposition (ALD) method, the first layer (110) may be formed as a layer including a single crystal. Specifically, the first layer (110) may include a hexagonal single crystal. The hexagonal single crystal of the first layer (110) will be described in more detail with reference to FIG. 1b.

[0054] Figure 1b is a TEM photograph of an electronic device according to one embodiment of the present invention. In this case, A is an enlarged view of a cross-section of the first layer (110), and B is a fast Fourier transform (FTT) pattern of the first layer (110).

[0055] With regard to the hexagonal single crystal of the first layer (110), referring to A of FIG. 1B, it can be confirmed that the material containing the group III-V element contained within the first layer (110) has the shape of a single crystal through the appearance of being laminated in layers in the vertical direction while extending in a certain direction, for example, in the horizontal direction.

[0056] Next, looking at B, which is a fast Fourier transform pattern (FFT pattern) of the first layer (110), it can be seen that six crystal peaks are arranged with the same length and angle around one crystal peak. Through this, it can be confirmed that the first layer (110) provided in the electronic device according to one embodiment of the present invention is formed as a hexagonal single crystal.

[0057] According to one embodiment of the present invention, since the first layer (110) is formed by including a material containing a group III-V element of a single crystal of a nuclear accident day, more improved electrical conductivity characteristics can be realized, and further, high electrical conductivity characteristics can be realized even at a thinner thickness than in the past.

[0058] According to one embodiment of the present invention, the thickness of the first layer (110) may be formed to be 1 Å or more and 500 Å or less. For example, the thickness of the first layer (110) may be formed in any one of the thickness ranges of 1 Å to 25 Å, 25 Å to 50 Å, 50 Å to 100 Å, 100 Å to 200 Å, 200 Å to 250 Å, and 250 Å to 500 Å. According to the present invention, excellent electrical conductivity characteristics may be achieved even in a thin thickness range of 1 Å to 25 Å, or further in a thin thickness range of 1 Å to 5 Å.

[0059] The above first layer (110) can be formed using atomic layer deposition (ALD).

[0060] According to one embodiment of the present invention, since the material containing the group III-V element is formed using the atomic layer deposition (ALD) method, the content of carbon present in the first layer (110) may be 0.001 at% or more and 1 at% or less, and preferably, carbon may not be contained. Accordingly, an electronic device having the first layer according to one embodiment of the present invention can secure high electrical conductivity characteristics at a relatively low thickness.

[0061] FIG. 2 is a schematic flowchart for forming a first layer of an electronic device according to one embodiment of the present invention.

[0062] As can be seen from FIG. 2, a method for forming a first layer (see 110 of FIG. 1A) provided in an electronic device according to one embodiment of the present invention may include a step of injecting a first source material (S11), a step of injecting a first reactant material and forming a first plasma (S12), and a step of forming a second plasma (S13).

[0063] The step of injecting the first source material (S11), the step of injecting the first reactant material and forming the first plasma (S12), and the step of forming the second plasma (S13) may utilize atomic layer deposition (ALD).

[0064] The step (S11) of spraying the first source material using the atomic layer deposition (ALD) method, the step (S12) of spraying the first reactant material and forming the first plasma, and the step (S13) of forming the second plasma can be performed in a vacuum chamber.

[0065] For example, a substrate (100) may be placed on a susceptor provided at the bottom of a vacuum chamber, and the first source material, the first reactant material, the first plasma gas, and the second plasma gas may be sprayed through a gas injection port provided at the top of the vacuum chamber, and while spraying the first / second plasma gas, power may be applied inside the chamber to form the first / second plasma, thereby forming a first layer (110) on the substrate (100).

[0066] When using the above atomic layer deposition (ALD) method, the steps of spraying the first source material onto the substrate (100), then spraying the first reactant material, forming the first plasma, and then forming the second plasma can be repeated in one cycle.

[0067] The first source material may include a Group III element. The Group III element may include, for example, one or more of gallium (Ga), aluminum (Al), and indium (In). When the first source material includes, for example, gallium (Ga), the gas containing gallium (Ga) may be, for example, trimethyl gallium (TriMethyl Gallium, TMG) ​​or triethyl gallium (TriEthyl Gallium, TEG). Meanwhile, the gas containing gallium (Ga) is not limited thereto.

[0068] After the step (S11) of spraying the first source material is performed, the step (S12) of spraying the first reactant material may be performed.

[0069] The first reactant material may contain, for example, one or more elements selected from the group consisting of nitrogen (N), phosphorus (P), arsenic (As), antimony (Sb), and oxygen (O). In this case, when the first reactant material contains nitrogen (N), the gas containing nitrogen (N) may be, for example, one of ammonia (NH3) and nitrogen (N2). Meanwhile, the gas containing nitrogen (N) is not limited thereto and may vary in various ways according to knowledge in the art.

[0070] A first plasma can be formed by injecting the first reactant material. The first plasma can include a nitrogen element. The first plasma can be formed by further including any one of argon gas, helium gas, and germanium gas.

[0071] Since the first plasma may have a detrimental effect on the dopant material when the first plasma contains hydrogen atoms, the first plasma may not contain hydrogen atoms. To this end, when the first reactant material contains nitrogen (N), ammonia (NH3) may not be used as the gas containing nitrogen (N), but nitrogen (N2) may be used. In this case, the first reactant material and the first plasma gas may contain the same nitrogen.

[0072] If the first reactant material contains oxygen (O), the first plasma may contain oxygen.

[0073] However, the first reactant material may be injected without forming the first plasma.

[0074] In the step (S13) of forming the second plasma, the second plasma may contain nitrogen gas. The second plasma may further include any one of hydrogen (H) gas, argon (Ar) gas, helium (He) gas, ammonia, and germanium (Ge) gas. The second plasma may be formed, for example, using a gas that combines one or two of hydrogen (H) and germanium (Ge) gas. In this case, the germanium (Ge) gas may be, for example, germane (GeH4), but is not limited thereto.

[0075] According to one embodiment of the present invention, the first layer (see 110 of FIG. 1a) is formed by repeatedly performing the step of spraying the first source material (S11), the step of spraying the first reactant material and forming the first plasma (S12), and the step of forming the second plasma (S13) in one cycle, so that the first layer (see 110 of FIG. 1a) includes a material containing a III-V group element of a hexagonal single crystal, and thus the electrical conductivity characteristics can be improved. In addition, through the step of forming the second plasma (S13), almost no carbon impurities remain inside or at the interface of the first layer (see 110 of FIG. 1a), so that the electrical conductivity characteristics can be further improved. The first layer (see 110 of FIG. 1a) includes a III-V group element, and the III-V group element may include GaN.

[0076] Furthermore, the first layer (see 110 of FIG. 1a) can be formed at a temperature of 50°C or more and 500°C or less. For example, the first layer (see 110 of FIG. 1a) can be formed at any one of a temperature range of 50°C to 100°C, 100°C to 200°C, 200°C to 250°C, and 250°C to 500°C. According to one embodiment of the present invention, by repeatedly performing the above one cycle, relatively high electrical conductivity characteristics can be secured even at a relatively low temperature, for example, in the range of 50°C to 100°C. Furthermore, when the first layer (see 110 of FIG. 1a) is formed at a relatively high temperature, for example, in the range of 250°C to 500°C, a single crystal is better formed within the first layer (see 110 of FIG. 1a), so that high electrical conductivity characteristics can be secured.

[0077] Meanwhile, although not specifically shown, after the step of injecting the first source material (S11), the step of injecting the first reactant material and forming the first plasma (S12), and the step of forming the second plasma (S13) are performed in one cycle, a process of injecting a purge gas into the vacuum chamber may be added between each of the steps (S11, S12, S13) or after one cycle is performed.

[0078] In addition, a step of forming a third plasma may be additionally included between the step (S11) of injecting the first source material and the step (S12) of injecting the first reactant material and forming the first plasma. In this case, the third plasma may be formed using a gas that combines one or two or more of hydrogen (H) gas, argon gas (Ar), helium gas (He), ammonia gas (NH3), and germanium (Ge) gas. The third plasma may be formed, for example, using a gas that combines one or two or more of hydrogen (H) and germanium (Ge) gas. In this case, the germanium (Ge) gas may be, for example, germanium (GeH4), but is not limited thereto.

[0079] In addition, after the step of forming the second plasma, a step of forming a fourth plasma containing nitrogen (N) may be additionally included. In this case, the fourth plasma may be formed using, for example, a gas containing nitrogen (N). In this case, the gas containing nitrogen (N) may be, for example, one or a combination of two or more of nitrogen (N2) and nitrous oxide (N2O). However, the present invention is not limited thereto.

[0080] Referring to Fig. 3, the substrate processing device (1) according to the first embodiment may include a chamber (2). A processing process for the substrate (100) may be performed inside the chamber (2). The chamber (2) may include an upper dome (21) and a lower dome (22).

[0081] The upper dome (21) may be arranged above the lower dome (22). The upper dome (21) may block the upper side of the processing space (20). The processing space (20) may be a space arranged inside the chamber (2). A processing process for the substrate (100) may be performed in the processing space (20). The upper dome (21) may be formed of quartz. The upper dome (21) may be formed in a dome shape with an open lower side overall.

[0082] The lower dome (22) may be placed below the upper dome (21). The lower dome (22) may block the lower side of the processing space (20). The lower dome (22) may be formed of quartz. The lower dome (22) may be formed in a form in which the upper side is open. An exhaust part (221) for exhausting gas, impurities, etc. from the processing space (20) may be provided in the lower dome (22). The exhaust part (221) may include a turbo molecular pump (TMP) (222). The chamber (2) including the turbo molecular pump (222) may be controlled to a high vacuum pressure of 10 mTorr or more and 50 mTorr or less.

[0083] The chamber (2) may include a heating unit (23). The heating unit (23) may heat the substrate (100) located inside the chamber (2). The heating unit (23) may also heat the substrate (100) by heating the processing space (20). The heating unit (23) may include a plurality of lamp heaters. The lamp heaters may heat the substrate (100) by emitting heating light toward the processing space (20). The heating unit (23) may be disposed on the outside of the lower dome (22). The heating unit (23) may also be disposed on the outside of the upper dome (21).

[0084] The chamber (2) may include a chamber body (24). The chamber body (24) may be positioned between the upper dome (21) and the lower dome (22). The upper dome (21) and the lower dome (22) may each be coupled to the chamber body (24).

[0085] A substrate support unit (3) may be installed in the chamber (2). The substrate support unit (3) may support one or more substrates (100). A processing process for the substrate (100) may be performed while the substrate (100) is supported by the substrate support unit (3) and positioned in the processing space (20). A driving unit (31) may be coupled to the substrate support unit (3). The driving unit (31) may raise and lower the substrate support unit (3). The driving unit (31) may also rotate the substrate support unit (3).

[0086] An injection unit (4) may be installed in the chamber (2). The injection unit (4) may inject gas. Using the gas injected by the injection unit (4), a processing process for the substrate (100) may be performed. The injection unit (4) may inject gas into the processing space (20). The injection unit (4) may inject gas toward the substrate support unit (3).

[0087] The above-described injection unit (4) may include a first injection unit (41) and a second injection unit (42). The first injection unit (41) may inject a first gas. The second injection unit (42) may inject a second gas. The first gas and the second gas may be different types of gases. When the first gas is a source gas, the second gas may be a reactant gas. For example, when the first gas is a source gas, the first gas may be a gas containing one or two or more elements among gallium (Ga), aluminum (Al), and indium (In), and when the second gas is a reactant gas, the second gas may be a gas containing one or two or more elements among nitrogen (N), phosphorus (P), arsenic (As), antimony (Sb), and oxygen (O). The first injection unit (41) and the second injection unit (42) may inject gases toward different parts of the substrate support unit (3). The first injection unit (41) may include a first path for injecting the first gas. The second injection unit (42) may include a second path for injecting the second gas. In this case, the substrate processing device (1) according to the first embodiment may be implemented to include an injection unit (4) having the first path and the second path above the chamber (2). The first path and the second path may be spatially separated so that the first gas and the second gas are not mixed before being injected into the processing space (20).

[0088] The first injection unit (41) may be connected to the first supply unit (51). The first supply unit (51) may store the first gas and supply the first gas to the first injection unit (41). The first injection unit (41) may be connected to a pile-up tank (52). The pile-up tank (52) may be filled with the first gas and may temporarily inject the first gas into the processing space (20) through the first injection unit (41). The pile-up tank (52) may be connected to each of the first supply unit (51) and the first injection unit (41) between the first supply unit (51) and the first injection unit (41). The first supply unit (51) may supply purge gas for purging the processing space (20), gas for forming plasma in the processing space (20), etc. to the first injection unit (41).

[0089] The second injection unit (42) may be connected to a second supply unit (53). The second supply unit (53) may store the second gas and supply the second gas to the second injection unit (42). The second injection unit (42) may be connected to a pile-up tank (54). The pile-up tank (54) may fill the second gas and temporarily inject the second gas into the processing space (20) through the second injection unit (42). The pile-up tank (54) may be connected to each of the second supply unit (53) and the second injection unit (42) between the second supply unit (53) and the second injection unit (42). The second supply unit (53) may supply purge gas for purging the processing space (20), gas for forming plasma in the processing space (20), etc. to the second injection unit (42).

[0090] An antenna (6) may be installed in the chamber (2). The antenna (6) may be used to form plasma in the processing space (20). The antenna (6) may include a coil that induces an electric field inside the chamber (2) to form plasma. The antenna (6) may be placed outside the upper dome (21). The antenna (6) may be coupled to the upper surface of the upper dome (21).

[0091] The antenna (6) may be connected to a power supply (61). The power supply (61) may apply RF (Radio Frequency) power to the antenna (6). Accordingly, the antenna (6) may form plasma inside the chamber (2). In this case, the injection unit (4) may inject a gas for forming plasma into the processing space (20). For example, the injection unit (4) may inject hydrogen (H2) or argon (Ar).

[0092] Referring to FIGS. 4 to 6, the substrate processing device (1) according to the second embodiment may include a chamber (2). A processing process for the substrate (100) may be performed inside the chamber (2).

[0093] The chamber (2) may include an injection unit (4). The injection unit (4) may inject gas. Using the gas injected by the injection unit (4), a processing process for the substrate (100) may be performed. The processing process for the substrate (100) may be performed in a processing space (20) arranged inside the chamber (2). The injection unit (4) may inject gas into the processing space (20).

[0094] The above-described injection unit (4) can inject gas toward the substrate support unit (3). The substrate support unit (3) can support one or more substrates (100). A processing process for the substrate (100) can be performed while the substrate (100) is supported by the substrate support unit (3) and positioned in the processing space (20). A driving unit (31) can be coupled to the substrate support unit (3). The driving unit (31) can raise and lower the substrate support unit (3). The driving unit (31) can also rotate the substrate support unit (3).

[0095] The above injection unit (4) may include a first plate (43) and a second plate (44).

[0096] The first plate (43) may be arranged on the upper side of the second plate (44). The first plate (43) may include a first gas supply port (431) and a second gas supply port (432). The first gas supply port (431) may function as a passage for the first gas to flow. The first gas supply port (431) may be formed by penetrating the first plate (43). The first gas supply port (431) may correspond to a first path for supplying the first gas. The first plate (43) may include a plurality of first gas supply ports (431). In this case, the first gas supply ports (431) may be arranged at positions spaced apart from each other. The second gas supply port (432) may function as a passage for the second gas to flow. The second gas supply port (432) may be formed by penetrating the first plate (43). The second gas supply port (432) may correspond to a second path for supplying the second gas. The first plate (43) may include a plurality of second gas supply ports (432). In this case, the second gas supply ports (432) may be arranged at positions spaced apart from each other. The lower surface of the first plate (43) may be formed flat.

[0097] The first gas supply port (431) may be connected to the first supply unit (51). The first supply unit (51) may store the first gas and supply the first gas to the first injection unit (41). The first injection unit (41) may be connected to a pile-up tank (52). The pile-up tank (52) may be filled with the first gas and may temporarily inject the first gas into the processing space (20) through the first injection unit (41). The pile-up tank (52) may be connected to each of the first supply unit (51) and the first injection unit (41) between the first supply unit (51) and the first injection unit (41). The first supply unit (51) may supply purge gas for purging the processing space (20), gas for forming plasma in the processing space (20), etc. to the first injection unit (41).

[0098] The second injection unit (42) may be connected to a second supply unit (53). The second supply unit (53) may store the second gas and supply the second gas to the second injection unit (42). The second injection unit (42) may be connected to a pile-up tank (54). The pile-up tank (54) may fill the second gas and temporarily inject the second gas into the processing space (20) through the second injection unit (42). The pile-up tank (54) may be connected to each of the second supply unit (53) and the second injection unit (42) between the second supply unit (53) and the second injection unit (42). The second supply unit (53) may supply purge gas for purging the processing space (20), gas for forming plasma in the processing space (20), etc. to the second injection unit (42).

[0099] The second plate (44) may be arranged on the lower side of the first plate (43). The second plate (44) may be arranged spaced apart from the first plate (43). The second plate (44) may include a plurality of openings (441). The openings (441) may be formed by penetrating the second plate (44). The openings (441) may be arranged at positions spaced apart from each other. The openings (441) may be arranged to be staggered with respect to the first gas supply port (431) and the second gas supply port (432). In this case, the openings (441) may be arranged at positions spaced apart from the vertically downward direction of the first gas supply port (431) and the vertically downward direction of the second gas supply port (432). That is, the openings (441) may be arranged so as not to overlap with the first gas supply port (431) and the second gas supply port (432). Accordingly, the first gas supply port (431) may inject the first gas toward the upper surface of the second plate (44). The second gas supply port (432) may inject the second gas toward the upper surface of the second plate (44).

[0100] The above-mentioned injection unit (4) can form plasma using the second plate (44) and the first plate (43). In this case, power, such as RF power, may be applied to the first plate (43), and the second plate (44) may be grounded. The first plate (43) may be grounded, and power may be applied to the second plate (44).

[0101] Meanwhile, the chamber (2) may include a turbo molecular pump (222). The turbo molecular pump (222) may control the pressure inside the chamber (2). The turbo molecular pump (222) may be connected to an exhaust unit (221) provided in the chamber (2). The turbo molecular pump (222) may control the pressure inside the chamber (2) by sucking a gas or the like from inside the chamber (2) through the exhaust unit (221). The chamber (2) including the turbo molecular pump (222) may be controlled to a high vacuum pressure of 10 mTorr or more and 50 mTorr or less.

[0102] Referring to FIGS. 4 to 7, the substrate processing device (1) according to the third embodiment differs from the substrate processing device (1) according to the second embodiment described above in that the injection unit (4) further includes a protruding member (433). In this case, since the remaining components except for the protruding member (433) are roughly the same as those described in the substrate processing device (1) according to the second embodiment described above, a detailed description thereof will be omitted, and the protruding member (433) will be described in detail with reference to the attached drawings.

[0103] The above-mentioned protruding member (433) can be coupled to the first plate (43). The protruding member (433) can protrude from the lower surface of the first plate (43) toward the second plate (44). The first gas supply port (431) can be formed by penetrating both the first plate (43) and the protruding member (433). The protruding member (433) and the first plate (43) can also be formed integrally.

[0104] A plurality of the protruding members (433) may be combined with the first plate (43). The protruding members (433) may be arranged at positions corresponding to each of the openings (441). The protruding members (433) may be formed to have a length so as to be inserted into each of the openings (441). The protruding members (433) may also be formed to have a length so as to be arranged above each of the openings (441). The protruding members (433) may also be formed to have a length so as to protrude downward from the second plate (44). When the protruding members (433) having the first gas supply ports (431) formed therein are provided, each of the openings (441) may be arranged to overlap the first gas supply ports (431). Each of the above openings (441) can be arranged to be staggered from the second gas supply port (432).

[0105] Referring to FIGS. 3 to 8, in the substrate processing apparatus (1) according to the second and third embodiments, the injection unit (4) can inject gas through both the first area (FA) and the second area (SA) arranged inside the first area (FA). That is, the injection unit (4) can be implemented as a full-surface injection structure. In this case, the injection unit (4) can be implemented so that the first gas supply port (431), the second gas supply port (432), and the opening (441) are arranged in both the first area (FA) and the second area (SA). The injection unit (4) can also inject gas only through the first area (FA) excluding the second area (SA). In this case, the injection unit (4) may be implemented so that the first gas supply port (431), the second gas supply port (432), and the opening (441) are disposed only in the first region (FA). The first gas supply port (431), the second gas supply port (432), and the opening (441) may not be disposed in the second region (SA). The second region (SA) may be an area corresponding to an area where the rotational axis (3a) of the substrate support member (3) is included. The first region (FA) may be disposed so as to surround the outer side of the second region (SA). When the second region (SA) is formed in a circular shape, the first region (FA) may be formed in a circular ring shape with an empty inner side. When the second region (SA) is formed in a square shape, the first region (FA) may be formed in a square ring shape with an empty inner side. Meanwhile, in Fig. 8, six circles indicated by dotted lines within the first area (FA) indicate the positions of the substrate (100) supported on the substrate support member (3).

[0106] The method for forming an electronic element according to the present invention can be performed using the substrate processing device (1) according to the first to third embodiments. When the substrate processing device (1) according to the first embodiment is used, the method for forming an electronic element according to the present invention can form the first layer (110) in the chamber (2) including the upper dome (21), the lower dome (22), and the heating unit (23). When using the substrate processing device (1) according to the second embodiment or the substrate processing device (1) according to the third embodiment, the method for forming an electronic element according to the present invention can form the first layer (110) in the chamber (2) including the first plate (43) including the first gas supply port (431) and the second gas supply port (432), the second plate (44) electrically insulated from the first plate (43) and spaced apart from the first plate (43) and having the openings (441) arranged in an alternating manner with respect to each of the first gas supply port (431) and the second gas supply port (432), and the turbo molecular pump (222).

[0107] Although the embodiments of the present invention have been described in more detail with reference to the attached drawings, the present invention is not necessarily limited to these embodiments, and various modifications may be implemented without departing from the technical spirit of the present invention. Therefore, the embodiments disclosed in the present invention are not intended to limit the technical spirit of the present invention, but to explain it, and the scope of the technical spirit of the present invention is not limited by these embodiments. Therefore, it should be understood that the embodiments described above are illustrative in all aspects and not restrictive. The protection scope of the present invention should be interpreted by the claims, and all technical ideas within a scope equivalent thereto should be interpreted as being included in the scope of the rights of the present invention.

Claims

1. A method for forming an electronic element on a substrate, A step of spraying a gas containing a group III element onto the substrate; A step of forming a first plasma containing a nitrogen element by spraying a gas containing a group V element on the substrate to form a first layer containing a group III-V element; and A step of forming a second plasma containing a nitrogen element on a first layer containing the above III-V group element, A method for forming an electronic element wherein the first plasma does not contain hydrogen atoms.

2. In paragraph 1, The above group III element contains one or more of gallium (Ga), aluminum (Al), and indium (In), A method for forming an electronic element, wherein the above group V element contains one or more of nitrogen (N), phosphorus (P), arsenic (As), antimony (Sb), and oxygen (O).

3. In paragraph 1, A method for forming an electronic device, wherein the first layer containing the group III-V element comprises GaN.

4. In paragraph 1, A method for forming an electronic element, wherein the first plasma further comprises one of argon gas, helium gas, and germanium gas.

5. In paragraph 1, A method for forming an electronic element, wherein the second plasma further comprises one of hydrogen gas, argon gas, helium gas, ammonia, and germanium gas.

6. In paragraph 1, A method for forming an electronic device, wherein the substrate comprises one or more materials selected from the group consisting of silicon, glass, sapphire, silicon oxide, and silicon nitride.

7. In paragraph 1, An additional lower film is provided on the above substrate, A method for forming an electronic device, wherein the lower layer comprises one or more materials selected from the group consisting of a silicon nitride film (SiN), a titanium nitride film (TiN), a tungsten nitride film (WN), a ruthenium nitride film (RuN), a copper nitride film (CuN), an aluminum nitride film (AlN), a silicon oxide film (SiO), a titanium oxide film (TiO), a tungsten oxide film (WO), a ruthenium oxide film (RuO), a ruthenium oxynitride film (RuON), and a copper oxide film (CuO).

8. In paragraph 1, A method for forming an electronic element wherein the temperature of the above substrate is 50°C or higher and 500°C or lower.

9. In paragraph 1, A method for forming an electronic device, wherein the thickness of the first layer containing the group III-V element is 1 Å or more and 25 Å or less.

10. In paragraph 1, Between the step of injecting a gas containing the group III element and the step of forming a first plasma containing a nitrogen element while injecting a gas containing the group V element, thereby forming a first layer containing a group III-V element. A method for forming an electronic device further comprising a step of forming a third plasma with one or more of hydrogen gas, argon gas, helium gas, ammonia, and germanium gas.

11. Substrate; and A first layer is provided on the substrate and contains a group III-V element, An electronic device in which the first layer containing the group III-V element is formed of a single crystal.

12. In paragraph 11, An electronic device in which the first layer containing the above III-V group element is formed of a hexagonal single crystal.

13. In paragraph 11, An electronic device in which the thickness of the first layer containing the group III-V element is 1 Å or more and 25 Å or less.

14. In paragraph 11, The substrate is an electronic device comprising one or more of silicon, glass, sapphire, silicon oxide, and silicon nitride.

15. In paragraph 11, An additional lower film is provided between the substrate and the first layer containing the group III-V element, The above lower layer is an electronic device comprising one or more materials selected from the group consisting of a silicon nitride film (SiN), a titanium nitride film (TiN), a tungsten nitride film (WN), a ruthenium nitride film (RuN), a copper nitride film (CuN), an aluminum nitride film (AlN), a silicon oxide film (SiO), a titanium oxide film (TiO), a tungsten oxide film (WO), a ruthenium oxide film (RuO), a ruthenium oxynitride film (RuON), and a copper oxide film (CuO).

16. In paragraph 15, The above lower layer is an electronic element in contact with the first layer containing the group III-V element.

17. In paragraph 11, The above substrate is an electronic element in contact with the first layer containing the III-V group element.

18. In paragraph 11, An electronic device in which carbon contained within the first layer containing the above III-V group element is 0.001 at% or more and 1 at% or less.

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