Connection film and manufacturing method therefor, and semiconductor packaging structure and packaging method therefor

Abstract

Provided in the present application are a connection film and a manufacturing method therefor, and a semiconductor packaging structure and a packaging method therefor. The connection film comprises a first metal layer and a second metal layer, which are stacked in the direction of thickness of the connection film, the first metal layer being provided with a plurality of nanopore structures. The first metal layer and the second metal layer improve the electrical conductivity and thermal conductivity of the connection film. A semiconductor and a substrate are connected by means of the metal layers; thus, the risk of outward flow of the connection film during a press-fitting process is reduced, facilitating a reduction in the size of a semiconductor package and an improvement in the precision of the position and angle; the risk of abnormal operation of the semiconductor caused by overflow of the connection film to the front surface of the semiconductor can also be reduced, improving the operation stability and reliability of the semiconductor; and the risk of a connection failure between the semiconductor and the substrate caused by the loss of adhesion of the connection film in a high-temperature environment is also reduced, improving the reliability of the semiconductor package. The nanopore structures further improve the electrical conductivity and thermal conductivity of the connection film.

Description

Connecting films and their fabrication methods, semiconductor packaging structures and their packaging methods

[0001] This application claims priority to Chinese Patent Application No. 202410917793.7, filed on July 9, 2024, entitled "Connecting Film and Method of Manufacturing Thereof, Semiconductor Packaging Structure and Packaging Method Thereof", the entire contents of which are incorporated herein by reference. Technical Field

[0002] This application relates to the field of semiconductor packaging technology, and in particular to a connecting film and its manufacturing method, a semiconductor packaging structure and its packaging method. Background Technology

[0003] In semiconductor packaging processes, semiconductors need to be bonded and fixed to substrates and semiconductors. Typically, this bonding and fixing is achieved with adhesive. However, because adhesive is fluid, there is a risk of adhesive overflow and semiconductor tilting during the bonding process. This results in a large adhesive coverage area, which limits the packaging density and also poses a risk of adhesive overflowing onto the semiconductor surface, leading to surface contamination.

[0004] To address the aforementioned issues, existing semiconductor packaging processes replace adhesive with a dried adhesive film. Under appropriate mounting temperature and pressure, the semiconductor is attached to the substrate or semiconductor via the dried adhesive film. Since the dried adhesive film has virtually no fluidity, the amount of adhesive overflow and the amount of chip tilt can be ignored, and the adhesive thickness can be precisely controlled.

[0005] Existing drying adhesive films are made of resin materials. Due to the limitations of resin materials, drying adhesive films have poor thermal conductivity, which cannot meet the increasing heat dissipation requirements of semiconductors. This poses a risk of semiconductor damage due to high temperatures. At the same time, drying adhesive films limit the choice of subsequent processes, meaning that the temperature of subsequent processes cannot be too high to avoid the risk of the drying adhesive film losing its adhesiveness under high temperature conditions, thereby increasing the difficulty of semiconductor packaging.

[0006] Application content

[0007] In view of this, this application provides a connecting film and its manufacturing method, a semiconductor packaging structure and its packaging method, wherein the connecting film has the advantages of high thermal and electrical conductivity and high temperature resistance.

[0008] The first aspect of this application provides a connecting film for connecting and fixing a semiconductor and a substrate. The connecting film includes a first metal layer and a second metal layer stacked along its own thickness direction. The first metal layer is provided with a plurality of nanopore structures. A first protective layer is located on the side of the first metal layer away from the second metal layer along the thickness direction of the connecting film. A second protective layer is located on the side of the second metal layer away from the first metal layer along the thickness direction of the connecting film.

[0009] In this application, the first metal layer and the second metal layer improve the conductivity and thermal conductivity of the bonding film. The semiconductor and the substrate are connected by the metal layer, that is, the fixed connection is achieved by the diffusion of metal elements during the lamination process, which reduces the risk of the bonding film flowing outward during the lamination process. This is beneficial to reduce the size of the semiconductor package, improve the accuracy of the mounting position and angle, and also reduces the risk of the bonding film overflowing to the front of the semiconductor, causing abnormal semiconductor operation. This improves the working stability and reliability of the semiconductor, and also reduces the risk of the bonding film losing its adhesiveness under high temperature environment, causing the connection between the semiconductor and the substrate to fail, thereby improving the reliability of the semiconductor package.

[0010] By setting a nanoporous structure in the first metal layer, the conductivity, thermal conductivity, ductility, and temperature coefficient of resistance of the first metal layer are further improved. The higher ductility facilitates the processing, transportation, cutting, and installation of the connecting membrane, while the higher conductivity and thermal conductivity further enhance the electrical and thermal conductivity of the connecting membrane.

[0011] Covering both sides of the connecting film with a first protective layer and a second protective layer facilitates the storage and transportation of the connecting film, reduces the risk that the connecting film will lose its adhesiveness due to the adsorption of external dust and other impurities, and thus reduces the risk that the connecting film will not be able to adhere to the semiconductor and substrate surfaces. At the same time, when the connecting film is rolled into a roll, the first and second protective layers can reduce the risk that the stacked parts of the connecting film will stick to each other, so as to facilitate the use of the connecting film.

[0012] In one possible design, the connecting membrane also includes a third metal layer, which is located between the second metal layer and the second protective layer along the thickness direction of the connecting membrane; the third metal layer is provided with multiple nanoporous structures.

[0013] In this application, the three-layer metal structure requires less pressure during lamination, thereby reducing the difficulty of using the bonding film and the difficulty of bonding and fixing the semiconductor to the substrate. The nanoporous structure in the third metal layer further improves its conductivity, thermal conductivity, ductility, and temperature coefficient of resistance. Higher ductility facilitates the processing, transportation, cutting, and installation of the bonding film, while higher conductivity and thermal conductivity further enhance its electrical and thermal performance.

[0014] In one possible design, the nanoporous structure is filled with a first colloid; the material of the first colloid includes ethanol, and also includes one or more of butanol, ethylene glycol, propylene glycol, polyvinylpyrrolidone, terpineol, ethyl cellulose, and butyl carbitol acetate.

[0015] In this application, the first colloid can enhance the surface adhesion of the connecting film. After the semiconductor, connecting film and substrate are stacked and before pressure is applied, the first colloid can pre-bond the semiconductor and connecting film, and the connecting film and substrate, to reduce the risk of relative movement between the semiconductor, connecting film and substrate, thereby improving the stability of the connection between the semiconductor, connecting film and substrate. In addition, the first colloid can also enhance the deformability of the connecting film, so as to make the connecting film roll into a roll, thereby facilitating the storage and transportation of the connecting film.

[0016] In one possible design, the side of the first protective film facing the first metal layer is coated with a release agent, which is a silicone release agent, an organically modified silicone release agent, a non-silicone release agent, or a hot-melt additive release agent; the side of the second protective film facing the second metal layer is coated with a second colloid, which is a photomodified adhesive or a heat-modified adhesive.

[0017] In this application, a release agent is coated on the side of the first protective film facing the first metal layer, reducing the adhesive strength between the first protective film and the first metal layer, thereby facilitating the removal of the first protective film from the first metal layer. A second colloid is coated on the side of the second protective film facing the second metal layer. The second colloid is initially viscous, which enhances the adhesive strength between the second colloid and the second or third metal layer. This reduces the risk of deformation and separation of the second protective film from the second or third metal layer during subsequent cutting processes. Furthermore, the viscous nature of the second colloid disappears after light or heat treatment, facilitating the removal of the second protective film.

[0018] The second aspect of this application provides a semiconductor packaging structure, which includes a semiconductor, a substrate, and a connecting film. The connecting film is located between the semiconductor and the substrate along the thickness direction, and the semiconductor and the substrate are connected and fixed through the connecting film. The connecting film includes a first metal layer and a second metal layer stacked along its own thickness direction. The first metal layer is connected and fixed to the semiconductor, and the second metal layer is connected and fixed to the substrate. The first metal layer is provided with a plurality of nanopore structures.

[0019] In this application, the first and second metal layers improve the conductivity and thermal conductivity of the bonding film, reducing the risk of damage to the semiconductor and substrate due to excessive temperature. This helps extend the lifespan of the semiconductor, substrate, and the overall semiconductor packaging structure, while also improving the semiconductor's performance. Furthermore, the semiconductor and substrate are connected via metal layers, achieving a fixed connection through the diffusion of metal elements during lamination. This reduces the risk of the bonding film flowing outwards during lamination, which helps reduce the size of the semiconductor package, improve the accuracy of the mounting position and angle, and also reduces the risk of the bonding film overflowing onto the semiconductor's front side, causing malfunctions. This improves the semiconductor's operational stability and reliability, and also reduces the risk of the bonding film losing its adhesiveness at high temperatures, leading to semiconductor-substrate connection failure, thus enhancing the reliability of the semiconductor package. The nanoporous structure further improves the conductivity, thermal conductivity, ductility, and temperature coefficient of resistance of the bonding film.

[0020] In one possible design, the connecting membrane also includes a third metal layer, and the second metal layer and the substrate are indirectly connected through the third metal layer along the thickness direction of the connecting membrane; the third metal layer is provided with multiple nanoporous structures.

[0021] In this application, the three-layer metal structure requires less pressure during the lamination process, thereby reducing the difficulty of bonding and fixing the semiconductor to the substrate. The nanoporous structure in the third metal layer further improves its conductivity, thermal conductivity, ductility, and temperature coefficient of resistance. Higher ductility facilitates the processing, transportation, cutting, and installation of the connecting film, while higher conductivity and thermal conductivity further enhance the conductive and thermal properties of the connecting film.

[0022] In one possible design, the nanoporous structure is filled with a first colloid; the material of the first colloid includes ethanol, and also includes one or more of butanol, ethylene glycol, propylene glycol, polyvinylpyrrolidone, terpineol, ethyl cellulose, and butyl carbitol acetate.

[0023] In this application, after the semiconductor, the connecting film, and the substrate are stacked and before pressure is applied, the first colloid can pre-bond the semiconductor and the connecting film, and the connecting film and the substrate, to reduce the risk of relative movement between the semiconductor, the connecting film, and the substrate, thereby improving the stability of the connection between the semiconductor, the connecting film, and the substrate. In addition, the first colloid can also improve the deformability of the connecting film, so as to make the connecting film roll into a roll, thereby facilitating the storage and transportation of the connecting film.

[0024] A third aspect of this application provides a method for fabricating a bonding membrane. The bonding membrane includes a first protective layer, a first metal layer, a second metal layer, and a second protective layer. The method for fabricating the bonding membrane includes: taking a metal foil and using the metal foil as the second metal layer, the second metal layer including a first surface and a second surface disposed opposite to each other along its own thickness direction; preparing the first metal layer on the first surface of the second metal layer; performing a dealloying process on the first metal layer to form a plurality of nanoporous structures; covering the side of the first metal layer away from the second metal layer with the first protective layer, and covering the side of the second metal layer away from the first metal layer with the second protective layer.

[0025] In this application, the first and second metal layers enhance the electrical and thermal conductivity of the bonding film. The semiconductor and substrate are connected via the metal layers, reducing the risk of the bonding film flowing outwards during lamination. This facilitates smaller semiconductor package sizes, improves the accuracy of mounting positions and angles, and reduces the risk of the bonding film overflowing onto the semiconductor's front side, leading to malfunctions. This improves the semiconductor's operational stability and reliability. Furthermore, it reduces the risk of the bonding film losing its adhesiveness at high temperatures, causing semiconductor-substrate connection failure, thereby enhancing the reliability of the semiconductor package. The fabrication of a nanoporous structure within the first metal layer further enhances its electrical conductivity, thermal conductivity, ductility, and temperature coefficient of resistance. Higher ductility facilitates the processing, transportation, cutting, and installation of the bonding film, while higher electrical and thermal conductivity further improve its electrical and thermal conductivity.

[0026] In one possible design, the connecting membrane further includes a third metal layer, and the method for fabricating the connecting membrane includes preparing a third metal layer on a second surface of the second metal layer before performing a dealloying process on the first metal layer.

[0027] In this application, a third metal layer is prepared, so that the connecting film has a three-layer metal layer structure, which reduces the difficulty of bonding and fixing the semiconductor to the substrate.

[0028] In one possible design, after the step of preparing a third metal layer on the second surface of the second metal layer, the method for fabricating the connecting film includes: performing a dealloying process on the third metal layer to form a multi-nanoporous structure.

[0029] In this application, a nanoporous structure is fabricated on the third metal layer, which improves the conductivity, thermal conductivity, ductility, and temperature coefficient of resistance of the connecting membrane, thereby further enhancing the conductivity and thermal conductivity of the connecting membrane.

[0030] In one possible design, the method for preparing the first metal layer is vacuum deposition, ion sputtering, arc cathode method, physical vapor deposition, or molecular beam epitaxy; the method for preparing the third metal layer is vacuum deposition, ion sputtering, arc cathode method, physical vapor deposition, or molecular beam epitaxy.

[0031] In this application, when the preparation method of the first metal layer is different from that of the third metal layer, the preparation of the first metal layer and the preparation of the third metal layer need to be carried out in two steps, so that the materials of the first metal layer and the second metal layer are different, in order to improve the performance of the connecting membrane; when the preparation method of the first metal layer and the preparation method of the third metal layer are the same, the preparation of the first metal layer and the preparation of the third metal layer can be carried out simultaneously, thereby facilitating the shortening of the fabrication cycle of the connecting membrane.

[0032] In one possible design, prior to the step of covering the first and second protective layers, the method of fabricating the connecting membrane includes: coating a first colloid on the surface of the nanoporous structure opposite to the second metal layer along the thickness direction of the connecting membrane, or immersing the nanoporous structure in the first colloid; the nanoporous structure adsorbs the first colloid into its pores, thereby filling the nanoporous structure with the first colloid, wherein the material of the first colloid includes ethanol, and also includes one or more of butanol, ethylene glycol, propylene glycol, polyvinylpyrrolidone, terpineol, ethyl cellulose, and butyl carbitol acetate.

[0033] In this application, since the first colloid is a viscous, low-temperature volatile organic compound, after the semiconductor, the connecting film and the substrate are stacked and before pressure is applied, the first colloid can pre-bond the semiconductor and the connecting film, and the connecting film and the substrate, so as to reduce the risk of relative movement between the semiconductor, the connecting film and the substrate, thereby improving the stability of the connection between the semiconductor, the connecting film and the substrate.

[0034] A fourth aspect of this application provides a semiconductor packaging method, the semiconductor packaging method comprising: taking a semiconductor, a substrate and a connecting film, the connecting film being prepared by any of the connecting film fabrication methods described above; removing a first protective layer; attaching a first metal layer of the connecting film to the surface of the semiconductor; removing a second protective layer; attaching a substrate to the side of the connecting film opposite to the semiconductor; and applying pressure to the semiconductor, the connecting film and the substrate along the thickness direction of the connecting film to connect and fix the semiconductor, the connecting film and the substrate.

[0035] In this application, the semiconductor and the substrate are connected by a metal layer, reducing the risk of the bonding film flowing outward during lamination. This facilitates a reduction in the size of the semiconductor package, improves the accuracy of the bonding position and angle, and also reduces the risk of the bonding film overflowing onto the front of the semiconductor, causing malfunctions. This enhances the operational stability and reliability of the semiconductor. Furthermore, it reduces the risk of the bonding film losing its adhesiveness at high temperatures, leading to semiconductor-substrate connection failure, thereby improving the reliability of the semiconductor package. The semiconductor, bonding film, and substrate are fixed through the diffusion of metal elements. Compared to traditional adhesive bonding, the connection method in this embodiment makes the connection between the semiconductor and the substrate more reliable, thus improving the operational stability of the semiconductor and extending the overall lifespan of the semiconductor package structure.

[0036] In one possible design, prior to the step of removing the second protective layer, the semiconductor packaging method includes cutting the interconnect film and the semiconductor to form multiple monomers.

[0037] In this application, a large-size semiconductor is cut into multiple smaller-size units, allowing multiple units to be processed simultaneously, thereby improving processing efficiency.

[0038] In one possible design, along the thickness direction of the connecting film, a photomodified adhesive or a thermally modified adhesive is disposed on the side of the second protective layer facing the second metal layer. After the step of cutting the connecting film and the semiconductor and before the step of removing the second protective layer, the semiconductor packaging method includes: phototreating the connecting film to make the photomodified adhesive lose its adhesiveness, or heat-treating the connecting film to make the thermally modified adhesive lose its adhesiveness.

[0039] In this application, light or heat treatment of the connecting film can cause the second colloid to lose its adhesiveness, thereby reducing the difficulty of peeling the second protective film off the second or third metal layer.

[0040] In one possible design, the semiconductor packaging method includes heating the semiconductor, the connecting film, and the substrate during the pressurization process.

[0041] In this application, heating is performed simultaneously during the pressurization process, which can increase the diffusion rate of metal elements and shorten the pressing cycle. Attached Figure Description

[0042] To more clearly illustrate the technical solutions of the embodiments of this application, the drawings used in the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0043] Figure 1 is a schematic diagram of the packaging structure of the semiconductor wafer before the improvement;

[0044] Figures 2a to 2d are schematic diagrams of the packaging method of the semiconductor wafer in Figure 1;

[0045] Figure 3 is a schematic diagram of the improved semiconductor packaging structure provided in this application;

[0046] Figure 4 is a schematic diagram of the connecting membrane in Figure 3 in one embodiment;

[0047] Figure 5 is a schematic diagram of the connecting membrane in Figure 3 in another embodiment;

[0048] Figures 6a, 7a, 8a and 9a are schematic diagrams of the fabrication method of the connecting membrane in Figure 4;

[0049] Figures 6b, 7b, 8b and 9b are schematic diagrams of the fabrication method of the connecting membrane in Figure 5;

[0050] Figures 10a, 11a, 12a and 13a are schematic diagrams of the semiconductor packaging method provided in this application in one embodiment, wherein the connecting film is the connecting film shown in Figure 4;

[0051] Figures 10b, 11b, 12b and 13b are schematic diagrams of the semiconductor packaging method provided in this application in another embodiment, wherein the connecting film is the connecting film shown in Figure 5;

[0052] Figures 14a, 15a, 16a, 17a and 18a are schematic diagrams of the semiconductor packaging method provided in this application in another embodiment, wherein the connecting film is the connecting film shown in Figure 4;

[0053] Figures 14b, 15b, 16b, 17b and 18b are schematic diagrams of the semiconductor packaging method provided in this application in another embodiment, wherein the connecting film is the connecting film shown in Figure 5.

[0054] Reference numerals: A-grinding wheel; B-vacuum chuck; C-semiconductor wafer; D-back grinding slurry; E-adhesive; F-cutting tape; G-additive; H-monolith; J-packaging substrate; 1-semiconductor; 11-monomer; 2-connecting film; 21-first protective layer; 22-first metal layer; 23-second metal layer; 231-first surface; 232-second surface; 24-third metal layer; 25-second protective layer; 26-nanoporous structure; 27-first colloid; 3-substrate. Detailed Implementation

[0055] To better understand the technical solution of this application, the embodiments of this application will be described in detail below with reference to the accompanying drawings.

[0056] It should be understood that the described embodiments are merely some, not all, of the embodiments in this application. All other embodiments obtained by those skilled in the art based on the embodiments in this application without inventive effort are within the scope of protection of this application.

[0057] The terminology used in the embodiments of this application is for the purpose of describing particular embodiments only and is not intended to be limiting of this application. The singular forms “a,” “the,” and “the” used in the embodiments of this application and the appended claims are also intended to include the plural forms unless the context clearly indicates otherwise.

[0058] It should be understood that the term "and / or" used in this article is merely a description of the relationship between related objects, indicating that three relationships can exist. For example, A and / or B can represent: A existing alone, A and B existing simultaneously, or B existing alone. Additionally, the character " / " in this article generally indicates that the preceding and following related objects have an "or" relationship.

[0059] The packaging structure of semiconductor wafer C is shown in Figure 1. Along the thickness direction of semiconductor wafer C, semiconductor wafer C, adhesive component E, and packaging substrate J are stacked. Adhesive component E is located between semiconductor wafer C and packaging substrate J, and is used to bond and fix semiconductor wafer C to packaging substrate J. The packaging method of semiconductor wafer C is as follows:

[0060] As shown in Figure 2a, a back-grinding paste D is coated on one side of the semiconductor wafer C and adsorbed by a vacuum chuck B. The other side of the semiconductor wafer C is polished by a grinding wheel A to reduce the thickness of the semiconductor wafer C.

[0061] As shown in Figure 2b, take the cutting tape F, cover one side of the cutting tape F with the adhesive E, and place the semiconductor wafer C on the adhesive E. Then, apply the additive G to the other side of the semiconductor wafer C and apply pressure to bond and fix the semiconductor wafer C, the adhesive E and the cutting tape F together.

[0062] As shown in Figure 2c, the semiconductor wafer C is cut so that the large semiconductor wafer C is divided into multiple small single pieces H;

[0063] As shown in Figure 2d, the single piece H and the adhesive component E on the single piece H are taken out and placed on the packaging substrate J. Pressure is applied to fix the single piece H to the packaging substrate J, and then subsequent operations such as cable soldering and back-end assembly are performed.

[0064] Typically, the adhesive E is a highly fluid adhesive. During the process of applying pressure to bond and fix the semiconductor wafer C, the adhesive E, and the cut tape F, as well as during the process of applying pressure to bond the monolithic piece H to the packaging substrate J, the adhesive will flow to the outside of the semiconductor wafer C. This results in a larger coverage area of ​​the adhesive on the packaging substrate J, leading to a larger package size for the semiconductor wafer C. Simultaneously, there is a risk that the adhesive will accumulate at the edges of the semiconductor wafer C and overflow onto its surface, potentially affecting the normal and stable operation of the semiconductor wafer C. Furthermore, during the process of the adhesive flowing to the outside of the semiconductor wafer C, there may be areas with insufficient adhesive and areas with excessive adhesive, potentially causing the semiconductor wafer C to tilt.

[0065] Therefore, when adhesive E is used, there are risks such as large package size, adhesive contamination of the semiconductor wafer C leading to malfunction, and tilting of the semiconductor wafer C. To solve these problems, adhesive is usually replaced with a dried adhesive film. The dried adhesive film is a sheet-like structure with a specific thickness and virtually no fluidity. During pressure bonding, the overflow and tilting of the dried adhesive film are negligible, allowing for precise control of the package size, thickness, and angle of the semiconductor wafer C. However, dried adhesive films are generally made of resin. Due to material limitations, dried adhesive films have poor electrical conductivity, thermal conductivity, and high-temperature resistance, limiting the performance of the semiconductor wafer C and failing to meet the increasing heat dissipation requirements. Furthermore, it limits the temperature of subsequent processes to avoid the risk of the dried adhesive film losing its adhesiveness due to high temperatures. Therefore, when adhesive E is a dried adhesive film, its poor electrical conductivity, thermal conductivity, and high-temperature resistance limit the performance of the semiconductor wafer C and increase the difficulty of subsequent processes.

[0066] To improve the electrical and thermal conductivity of the dried adhesive film, conductive metal particles can be added to it. However, the presence of a large amount of organic matter in the dried adhesive film limits the improvement in electrical and thermal conductivity caused by the conductive metal particles. At the same time, the high-temperature resistance of the dried adhesive film cannot be significantly improved.

[0067] Therefore, the first aspect of this application provides a connecting film 2 and a semiconductor 1 packaging structure connected and fixed by the connecting film 2. As shown in FIG3, the semiconductor 1 packaging structure includes a semiconductor 1, a connecting film 2 and a substrate 3 stacked along its own thickness direction. The semiconductor 1 and the substrate 3 are bonded and fixed together by the connecting film 2. The semiconductor 1 can be a semiconductor laser (LD), a silicon photonic chip, a CuW wafer, etc., and the substrate 3 can be a chip or a substrate for packaging. This application does not specifically limit the specific types of semiconductor 1 and substrate 3.

[0068] The connecting film 2 includes a first metal layer 22 and a second metal layer 23 stacked along its own thickness direction. The first metal layer 22 is used to connect with the semiconductor 1, and the second metal layer 23 is used to connect with the substrate 3. That is, the semiconductor 1 and the substrate 3 are connected and fixed by the metal layer. The first metal layer 22 is provided with a plurality of nanopore structures 26.

[0069] The connecting film 2 includes a first metal layer 22 and a second metal layer 23 stacked together. This improves the electrical and thermal conductivity of the connecting film 2, reducing the risk of damage to the semiconductor 1 and the substrate 3 due to excessive temperature. This helps extend the service life of the semiconductor 1, the substrate 3, and the overall semiconductor 1 packaging structure, while also improving the performance of the semiconductor 1. Furthermore, the semiconductor 1 and the substrate 3 are connected by the metal layers. Specifically, the connection is achieved through the diffusion of metal elements during the lamination process, reducing the risk of the connecting film 2 flowing outward during lamination. This helps reduce the size of the semiconductor 1 package, improve the accuracy of the mounting position and angle, and also reduces the risk of the connecting film 2 overflowing onto the front of the semiconductor 1, causing abnormal operation of the semiconductor 1. This improves the working stability and reliability of the semiconductor 1, and also reduces the risk of the connecting film 2 losing its adhesiveness under high temperature conditions, leading to connection failure between the semiconductor 1 and the substrate 3, thereby improving the reliability of the semiconductor 1 package.

[0070] A nanoporous structure 26 is provided in the first metal layer 22, which further improves the conductivity, thermal conductivity, ductility, and temperature coefficient of resistance of the first metal layer 22. The higher ductility facilitates the processing, transportation, cutting, and installation of the connecting film 2, and the higher conductivity and thermal conductivity further improve the conductivity and thermal conductivity of the connecting film 2.

[0071] Specifically, in one embodiment, as shown in FIG4, the first metal layer 22 is directly connected to the semiconductor 1, and the second metal layer 23 is directly connected to the substrate 3. That is, the connecting film 2 only contains a double-layer metal layer structure. After stacking the semiconductor 1, the connecting film 2, and the substrate 3 and applying pressure, some metal elements in the first metal layer 22 diffuse into the semiconductor 1, and some elements in the second metal layer 23 diffuse into the substrate 3, thereby fixing the first metal layer 22 to the semiconductor 1 and the second metal layer 23 to the substrate 3. Compared with traditional adhesive fixing, the connection method in this embodiment makes the connection between the semiconductor 1 and the substrate 3 more reliable, which is beneficial to improving the working stability of the semiconductor 1 and extending the overall service life of the semiconductor 1 packaging structure. In particular, the connecting film 2 only contains a double-layer metal layer structure, which can reduce the material cost of the connecting film 2, thereby helping to reduce the overall processing cost of the semiconductor 1 packaging structure.

[0072] In another embodiment, as shown in FIG5, the connecting film 2 further includes a third metal layer 24. Along the thickness direction of the connecting film 2, the third metal layer 24 is located on the side of the second metal layer 23 away from the first metal layer 22. The first metal layer 22 is directly connected to the semiconductor 1, the third metal layer 24 is directly connected to the substrate 3, and the second metal layer 23 is indirectly connected to the substrate 3 through the third metal layer 24. That is, the connecting film 2 includes a three-layer metal layer structure, wherein the third metal layer 24 is provided with a nanoporous structure 26.

[0073] After stacking the semiconductor 1, the connecting film 2, and the substrate 3 and applying pressure, some metal elements in the first metal layer 22 diffuse into the semiconductor 1, and some elements in the third metal layer 24 diffuse into the substrate 3, thereby fixing the first metal layer 22 to the semiconductor 1 and the third metal layer 24 to the substrate 3. During the pressing and fixing process of the semiconductor 1, connecting film 2, and substrate 3, compared to a two-layer metal layer structure, the three-layer metal layer structure requires less pressing force, thus reducing the difficulty of using the connecting film 2 and also reducing the difficulty of pressing and fixing the semiconductor 1 to the substrate.

[0074] A nanoporous structure 26 is provided in the third metal layer 24, which further improves the conductivity, thermal conductivity, ductility, and temperature coefficient of resistance of the third metal layer 24. The higher ductility facilitates the processing, transportation, cutting, and installation of the connecting film 2, and the higher conductivity and thermal conductivity further improve the conductivity and thermal conductivity of the connecting film 2.

[0075] In any of the above embodiments, the pore size of the nanopore structure 26 is between 2nm and 1000nm, specifically it can be 2nm, 52nm, 102nm, 152nm, 202nm, 252nm, 302nm, 352nm, 402nm, 452nm, 502nm, 552nm, 602nm, 652nm, 702nm, 752nm, 802nm, 852nm, 902nm, 952nm, 1000nm, etc. Preferably, the pore size of the nanopore structure 26 is between 20nm and 100nm, specifically it can be 20nm, 25nm, 30nm, 35nm, 40nm, 45nm, 50nm, 55nm, 60nm, 65nm, 70nm, 75nm, 80nm, 85nm, 90nm, 95nm, 100nm, etc.

[0076] If the pore size of the nanopore structure 26 is too small, the fabrication difficulty of the nanopore structure 26 will increase. If the pore size of the nanopore structure 26 is too large, the deformability of the connecting film 2 with the nanopore structure 26 will be weak, which will increase the packaging difficulty of the semiconductor 1. Therefore, a pore size between 20 nm and 100 nm can reduce the fabrication difficulty of the nanopore structure 26 and the packaging difficulty of the semiconductor 1.

[0077] In any of the above embodiments, the nanoporous structure 26 is filled with a first colloid 27. The first colloid 27 is a viscous, low-temperature volatile organic compound. The first colloid 27 includes ethanol, and also includes one or more of butanol, ethylene glycol, propylene glycol, polyvinylpyrrolidone, terpineol, ethyl cellulose, and butyl carbitol acetate. The present application embodiments do not specifically limit the mixing method or mixing ratio of ethanol with other materials. The first colloid 27 can enhance the surface adhesion of the connecting film 2. After the semiconductor 1, the connecting film 2, and the substrate 3 are stacked and before pressure is applied, the first colloid 27 can pre-bond the semiconductor 1 and the connecting film 2, and the connecting film 2 and the substrate 3, to reduce the risk of relative movement between the semiconductor 1, the connecting film 2, and the substrate 3, thereby improving the stability of the connection between the semiconductor 1, the connecting film 2, and the substrate 3. In addition, the first colloid 27 can also enhance the deformability of the connecting film 2, so as to facilitate the rolling of the connecting film 2 into rolls, thereby facilitating the storage and transportation of the connecting film 2.

[0078] Based on the connecting membrane 2 described in any of the above embodiments, a second aspect of this application provides a method for manufacturing the connecting membrane 2, comprising:

[0079] Take a metal foil and use the metal foil as the second metal layer 23. The second metal layer 23 includes a first surface 231 and a second surface 232 that are disposed opposite to each other along its own thickness direction.

[0080] As shown in Figure 6a, a first metal layer 22 is prepared on the first surface 231 of the second metal layer 23; or, as shown in Figure 6b, a first metal layer 22 is prepared on the first surface 231 of the second metal layer 23, and a third metal layer 24 is prepared on the second surface 232.

[0081] As shown in Figure 7a, a dealloying process is performed on the first metal layer 22 to form multiple nanoporous structures 26; or, as shown in Figure 7b, a dealloying process is performed on the first metal layer 22 and the third metal layer 24 to form multiple nanoporous structures 26.

[0082] In this embodiment, the material of the metal foil includes, but is not limited to, metals or metal alloys such as gold, copper, platinum, and silver, so as to reasonably adjust the material of the metal foil according to factors such as processing technology, application scenario, and cost, so as to facilitate the processing and application of the connecting film 2.

[0083] When the first metal layer 22 is prepared only on the first surface 231, the connecting film 2 has a double-layer metal layer structure, which can reduce the material cost of the connecting film 2; when the first metal layer 22 is prepared on the first surface 231 and the third metal layer 24 is prepared on the second surface 232, the connecting film 2 has a three-layer metal layer structure, which reduces the difficulty of bonding and fixing the semiconductor 1 to the substrate.

[0084] Nanoporous structures 26 are fabricated on the first metal layer 22 and the third metal layer 24, which improves the conductivity, thermal conductivity, ductility and temperature coefficient of resistance of the connecting membrane 2, thereby further improving the conductivity and thermal conductivity of the connecting membrane 2.

[0085] The method for preparing the first metal layer 22 can be vacuum deposition, ion sputtering, arc cathode method, physical vapor deposition method or molecular beam epitaxy; the method for preparing the third metal layer 24 can be vacuum deposition, ion sputtering, arc cathode method, physical vapor deposition method or molecular beam epitaxy.

[0086] When the preparation method of the first metal layer 22 is different from that of the third metal layer 24, the preparation of the first metal layer 22 and the third metal layer 24 need to be carried out in two steps, so that the materials of the first metal layer 22 and the second metal layer 23 are different, in order to improve the performance of the connecting membrane 2; when the preparation method of the first metal layer 22 is the same as that of the third metal layer 24, the preparation of the first metal layer 22 and the third metal layer 24 can be carried out simultaneously, thereby shortening the manufacturing cycle of the connecting membrane 2.

[0087] When the nanoporous structure 26 is filled with the first colloid 27, the method for fabricating the connecting membrane 2 includes:

[0088] Along the thickness direction of the connecting membrane 2, a first colloid 27 is coated on the surface of the nanoporous structure 26 facing away from the second metal layer 23, or the nanoporous structure 26 is immersed in the first colloid 27. Since the nanoporous structure 26 has adsorption properties, it can draw the first colloid 27 into its pores. Specifically, when the connecting membrane 2 has a double-layer metal structure, as shown in FIG8a, the nanoporous structure 26 of the first metal layer 22 draws the first colloid 27 from the outside into its pores; when the connecting membrane 2 has a triple-layer metal structure, as shown in FIG8b, the nanoporous structures 26 of the first metal layer 22 and the third metal layer 24 simultaneously draw the first colloid 27 from the outside into its pores, so that the nanoporous structure 26 is filled with the first colloid 27.

[0089] In this embodiment, since the first colloid 27 is a viscous, low-temperature volatile organic compound, after the semiconductor 1, the connecting film 2, and the substrate 3 are stacked and before pressure is applied, the first colloid 27 can pre-bond the semiconductor 1 and the connecting film 2, and the connecting film 2 and the substrate 3, so as to reduce the risk of relative movement between the semiconductor 1, the connecting film 2, and the substrate 3, thereby improving the stability of the connection between the semiconductor 1, the connecting film 2, and the substrate 3.

[0090] Optionally, the method for manufacturing the connecting membrane 2 may further include:

[0091] A first protective layer 21 is covered on the side of the first metal layer 22 facing away from the second metal layer 23, and a second protective layer 25 is covered on the side of the second metal layer 23 facing away from the first metal layer 22. Specifically, when the connecting membrane 2 has a double-layer metal layer structure, as shown in FIG9a, the first protective layer 21 is covered on the surface of the first metal layer 22 facing away from the second metal layer 23, and the second protective layer 25 is covered on the surface of the second metal layer 23 facing away from the first metal layer 22; when the connecting membrane 2 has a triple-layer metal layer structure, as shown in FIG9b, the first protective layer 21 is covered on the surface of the first metal layer 22 facing away from the second metal layer 23, and the second protective layer 25 is covered on the surface of the third metal layer 24 facing away from the second metal layer 23.

[0092] In this embodiment, the first protective layer 21 and the second protective layer 25 are covered on both sides of the connecting film 2, which facilitates the storage and transportation of the connecting film 2 and reduces the risk that the connecting film 2 will lose its adhesiveness due to the adsorption of external dust and other impurities. This reduces the risk that the connecting film 2 will not be able to adhere to the surface of the semiconductor 1 and the substrate. At the same time, when the connecting film 2 is rolled into a roll, the first protective layer 21 and the second protective layer 25 can reduce the risk that the stacked parts of the connecting film 2 will stick to each other, so as to facilitate the use of the connecting film 2.

[0093] The first protective film is coated with a release agent on the side facing the first metal layer 22. The release agent is a silicone release agent, an organic modified silicone release agent, a non-silicone release agent, or a hot melt additive release agent, in order to reduce the adhesion strength between the first protective film and the first metal layer 22, thereby making it easier to remove the first protective film from the first metal layer 22.

[0094] The second protective film is coated with a second colloid on the side facing the second metal layer 23. The second colloid is a light-modified adhesive or a heat-modified adhesive. The second colloid is viscous in its initial state, which can improve the adhesion strength between the second colloid and the second metal layer 23 or the third metal layer 24. When there is a subsequent cutting process, it reduces the risk of the second protective film deforming and separating from the second metal layer 23 or the third metal layer 24 during the cutting process. Moreover, the viscousness of the second colloid disappears after light treatment or heat treatment, so that the second protective film can be removed.

[0095] The materials of the first protective film include, but are not limited to, polypropylene, polyethylene terephthalate, polyethylene glycol terephthalate, polyetherketone, polycarbonate, polysulfone, polyimide, polyacrylonitrile, styrene-acrylonitrile copolymer, polyurethane, nylon, polyethylene, polypropylene, polyamide, ethylene-styrene copolymer, cyclic olefin copolymer, polyvinyl alcohol, ethyl ethylene, ionic polymers, synthetic paper, or a group of materials composed of combinations thereof.

[0096] The materials of the second protective film include, but are not limited to, polypropylene, poly(diethyl terephthalate), polyethylene glycol terephthalate, polyetherketone, polycarbonate, polysulfone, polyimide, polyacrylonitrile, styrene-acrylonitrile copolymer, polyurethane, nylon, polyethylene, polypropylene, polyamide, ethylene-styrene copolymer, cyclic olefin copolymer, polyvinyl alcohol, ethyl ethylene, ionic polymers, synthetic paper, or a group of materials composed of combinations thereof.

[0097] The materials of the first protective film and the second protective film can be the same or different.

[0098] In summary, the specific steps of the method for manufacturing the connecting membrane 2 provided in this application are as follows:

[0099] Take a metal foil and use the metal foil as the second metal layer 23. The second metal layer 23 includes a first surface 231 and a second surface 232 that are disposed opposite to each other along its own thickness direction.

[0100] As shown in Figure 6a, a first metal layer 22 is prepared on the first surface 231 of the second metal layer 23; or, as shown in Figure 6b, a first metal layer 22 is prepared on the first surface 231 of the second metal layer 23, and a third metal layer 24 is prepared on the second surface 232.

[0101] As shown in Figure 7a, the first metal layer 22 is subjected to a dealloying process to form multiple nanoporous structures 26; or, as shown in Figure 7b, the first metal layer 22 and the third metal layer 24 are subjected to a dealloying process to form multiple nanoporous structures 26.

[0102] As shown in Figure 8a, a first colloid 27 is coated on the outside of the first metal layer 22, or the connecting membrane 2 is immersed in the first colloid 27, and the nanoporous structure 26 of the first metal layer 22 draws the first colloid 27 from the outside into the pores, so that the nanoporous structure 26 is filled with the first colloid 27; or, as shown in Figure 8b, a first colloid 27 is coated on the outside of the first metal layer 22 and the third metal layer 24, or the connecting membrane 2 is immersed in the first colloid 27, and the nanoporous structure 26 of the first metal layer 22 and the nanoporous structure 26 of the third metal layer 24 simultaneously draw the first colloid 27 from the outside into the pores, so that the nanoporous structure 26 is filled with the first colloid 27.

[0103] As shown in Figure 9a, a first protective layer 21 is covered on the surface of the first metal layer 22 facing away from the second metal layer 23, and a second protective layer 25 is covered on the surface of the second metal layer 23 facing away from the first metal layer 22; or, as shown in Figure 9b, a first protective layer 21 is covered on the surface of the first metal layer 22 facing away from the second metal layer 23, and a second protective layer 25 is covered on the surface of the third metal layer 24 facing away from the first metal layer 22.

[0104] Roll the completed connecting membrane 2 into a roll.

[0105] Based on the aforementioned connecting film 2, this application embodiment also provides a semiconductor 1 packaging method, including:

[0106] Semiconductor 1, substrate 3 and connecting film 2 are taken, and connecting film 2 is prepared by the above-described method for preparing connecting film 2;

[0107] Remove the first protective layer 21;

[0108] As shown in Figure 10a or Figure 10b, the first metal layer 22 of the connecting film 2 is attached to the surface of the semiconductor 1.

[0109] As shown in Figure 11a or Figure 11b, remove the second protective layer 25;

[0110] The substrate 3 is attached to the side of the connecting film 2 away from the semiconductor 1, as shown in FIG12a. The substrate 3 is attached to the surface of the second metal layer 23, or, as shown in FIG12b, the substrate 3 is attached to the surface of the third metal layer 24.

[0111] As shown in Figure 13a, pressure is applied to the semiconductor 1, the connecting film 2, and the substrate 3 along the thickness direction of the connecting film 2. Some metal elements in the first metal layer 22 diffuse into the semiconductor 1, and some elements in the second metal layer 23 diffuse into the substrate 3, thereby connecting and fixing the semiconductor 1, the connecting film 2, and the substrate 3. During the pressure application process, heating can also be performed to increase the diffusion rate of the metal elements and shorten the pressing cycle. Alternatively, as shown in Figure 13b, pressure is applied to the semiconductor 1, the connecting film 2, and the substrate 3 along the thickness direction of the connecting film 2. Some metal elements in the first metal layer 22 diffuse into the semiconductor 1, and some elements in the third metal layer 24 diffuse into the substrate 3, thereby connecting and fixing the semiconductor 1, the connecting film 2, and the substrate 3. During the pressure application process, heating can also be performed to increase the diffusion rate of the metal elements and shorten the pressing cycle.

[0112] In this embodiment, the semiconductor 1 and the substrate 3 are connected by a metal layer, reducing the risk of the connecting film 2 flowing outward during the lamination process. This helps to reduce the size of the semiconductor 1 package, improve the accuracy of the mounting position and angle, and also reduces the risk of the connecting film 2 overflowing onto the front of the semiconductor 1, causing abnormal operation of the semiconductor 1. This improves the working stability and reliability of the semiconductor 1. It also reduces the risk of the connecting film 2 losing its adhesiveness under high temperature conditions, leading to connection failure between the semiconductor 1 and the substrate 3, thereby improving the reliability of the semiconductor 1 package. The semiconductor 1, connecting film 2, and substrate 3 are fixed by the diffusion of metal elements. Compared with traditional adhesive fixing, the connection method in this embodiment makes the connection between the semiconductor 1 and the substrate 3 more reliable, which helps to improve the working stability of the semiconductor 1 and extend the overall service life of the semiconductor 1 package structure.

[0113] Optionally, prior to the step of removing the second protective layer 25, the semiconductor 1 packaging method includes:

[0114] As shown in Figure 14a or Figure 14b, the connecting film 2 and the semiconductor 1 are cut to form a plurality of monomers 11.

[0115] In this embodiment, a large semiconductor 1 is cut into multiple smaller monomers 11, so that multiple monomers 11 can be processed simultaneously, thereby improving processing efficiency.

[0116] When the side of the second protective film facing the second metal layer 23 is coated with photomodified adhesive or thermally modified adhesive, the semiconductor 1 packaging method includes the following steps after the step of cutting the connecting film 2 and the semiconductor 1 and before the step of removing the second protective layer 25:

[0117] The connecting film 2 is light-treated to make the light-modified adhesive lose its stickiness, or the connecting film 2 is heat-treated to make the heat-modified adhesive lose its stickiness, so as to reduce the difficulty of peeling the second protective film off the second metal layer 23 or the third metal layer 24.

[0118] In summary, in one embodiment, the specific steps of the semiconductor 1 packaging method provided in this application include:

[0119] Semiconductor 1, substrate 3 and connecting film 2 are taken, and connecting film 2 is prepared by the above-described method for preparing connecting film 2;

[0120] Remove the first protective layer 21;

[0121] As shown in Figure 10a or Figure 10b, the first metal layer 22 of the connecting film 2 is attached to the surface of the semiconductor 1.

[0122] As shown in Figure 11a or Figure 11b, the second protective layer 25 is removed after the connecting membrane 2 is subjected to light treatment or heat treatment.

[0123] The substrate 3 is attached to the side of the connecting film 2 away from the semiconductor 1, as shown in FIG12a. The substrate 3 is attached to the surface of the second metal layer 23, or, as shown in FIG12b, the substrate 3 is attached to the surface of the third metal layer 24.

[0124] As shown in Figure 13a, pressure is applied to the semiconductor 1, the connecting film 2, and the substrate 3 along the thickness direction of the connecting film 2. Some metal elements in the first metal layer 22 diffuse into the semiconductor 1, and some elements in the second metal layer 23 diffuse into the substrate 3, thereby connecting and fixing the semiconductor 1, the connecting film 2, and the substrate 3. During the pressure application process, heating can also be performed to increase the diffusion rate of the metal elements and shorten the pressing cycle. Alternatively, as shown in Figure 13b, pressure is applied to the semiconductor 1, the connecting film 2, and the substrate 3 along the thickness direction of the connecting film 2. Some metal elements in the first metal layer 22 diffuse into the semiconductor 1, and some elements in the third metal layer 24 diffuse into the substrate 3, thereby connecting and fixing the semiconductor 1, the connecting film 2, and the substrate 3. During the pressure application process, heating can also be performed to increase the diffusion rate of the metal elements and shorten the pressing cycle.

[0125] In another embodiment, the specific steps of the semiconductor 1 packaging method provided in this application include:

[0126] Semiconductor 1, substrate 3 and connecting film 2 are taken, and connecting film 2 is prepared by the above-described method for preparing connecting film 2;

[0127] Remove the first protective layer 21;

[0128] As shown in Figure 10a or Figure 10b, the first metal layer 22 of the connecting film 2 is attached to the surface of the semiconductor 1.

[0129] As shown in Figure 14a or Figure 14b, the connecting film 2 and the semiconductor 1 are cut to form a plurality of monomers 11;

[0130] As shown in Figure 15a or Figure 15b, the second protective layer 25 is removed after the connecting membrane 2 is subjected to light treatment or heat treatment.

[0131] As shown in Figure 16a or Figure 16b, remove monomer 11;

[0132] The substrate 3 is attached to the side of the connecting film 2 away from the semiconductor 1, as shown in FIG17a. The substrate 3 is attached to the surface of the second metal layer 23, or, as shown in FIG17b, the substrate 3 is attached to the surface of the third metal layer 24.

[0133] As shown in Figure 18a, pressure is applied to the semiconductor 1, the connecting film 2, and the substrate 3 along the thickness direction of the connecting film 2. Some metal elements in the first metal layer 22 diffuse into the semiconductor 1, and some elements in the second metal layer 23 diffuse into the substrate 3, thereby connecting and fixing the semiconductor 1, the connecting film 2, and the substrate 3. During the pressure application process, heating can also be performed to increase the diffusion rate of the metal elements and shorten the pressing cycle. Alternatively, as shown in Figure 18b, pressure is applied to the semiconductor 1, the connecting film 2, and the substrate 3 along the thickness direction of the connecting film 2. Some metal elements in the first metal layer 22 diffuse into the semiconductor 1, and some elements in the third metal layer 24 diffuse into the substrate 3, thereby connecting and fixing the semiconductor 1, the connecting film 2, and the substrate 3. During the pressure application process, heating can also be performed to increase the diffusion rate of the metal elements and shorten the pressing cycle.

[0134] In summary, the connecting film 2 fabricated using the above method can be applied in high thermal conductivity and high electrical conductivity scenarios. Simultaneously, it expands the application scenarios of nanopore technology, enabling the nanopore structure 26 to be used in scenarios where precise patterning of solder pre-placement is impossible, such as in tube shells, and in scenarios where III-V compound substrate materials are not compatible with nanopore fabrication processes, such as in semiconductor packaging. Using the connecting film 2 fabricated using the above method during the semiconductor 1 packaging process expands the types of semiconductor 1 to include high-power laser COC surface mount scenarios such as industrial lasers and laser displays, as well as surface mount scenarios requiring high thermal conductivity and high temperature stability, such as coherent SOA, Driver, DSP (Digital Signal Processing), ASIC (Application Specific Integrated Circuit), and TIA (Transimpedance Amplifier). Furthermore, it expands the substrate 3 to include large-size substrates, in-cell surface mount substrates, TECs, ceramic pads, and other materials.

[0135] For the same or similar parts among the various embodiments in this specification, please refer to each other.

Claims

1. A connecting film for connecting and fixing a semiconductor and a substrate, characterized in that, The connecting membrane includes a first metal layer and a second metal layer stacked along its own thickness direction, and the first metal layer is provided with a plurality of nanopore structures. The first protective layer, along the thickness direction of the connecting film, is located on the side of the first metal layer that faces away from the second metal layer; The second protective layer is located along the thickness direction of the connecting film on the side of the second metal layer opposite to the first metal layer.

2. The connecting membrane according to claim 1, characterized in that, The connecting membrane further includes a third metal layer, which is located between the second metal layer and the second protective layer along the thickness direction of the connecting membrane. The third metal layer is provided with a plurality of nanoporous structures.

3. The connecting membrane according to claim 1 or 2, characterized in that, The nanoporous structure is filled with a first colloid; The first colloid includes ethanol, and also includes one or more of butanol, ethylene glycol, propylene glycol, polyvinylpyrrolidone, terpineol, ethyl cellulose, and butyl carbitol acetate.

4. The connecting membrane according to any one of claims 1 to 3, characterized in that, Along the thickness direction of the connecting film, a second colloid is provided on the side of the second protective layer facing the second metal layer; The second colloid is a photomodified adhesive or a heat-modified adhesive.

5. A semiconductor packaging structure, characterized in that, The semiconductor packaging structure includes a semiconductor, a substrate, and a connecting film. Along the thickness direction of the connecting film, the connecting film is located between the semiconductor and the substrate, and the semiconductor and the substrate are connected and fixed through the connecting film. The connecting film includes a first metal layer and a second metal layer stacked along its own thickness direction. The first metal layer is connected and fixed to the semiconductor, and the second metal layer is connected and fixed to the substrate. The first metal layer is provided with a plurality of nanopore structures.

6. The semiconductor packaging structure according to claim 5, characterized in that, The connecting membrane further includes a third metal layer, and the second metal layer and the substrate are indirectly connected through the third metal layer along the thickness direction of the connecting membrane; The third metal layer is provided with multiple nanoporous structures.

7. The semiconductor packaging structure according to claim 5 or 6, characterized in that, The nanoporous structure is filled with a first colloid; The first colloid includes ethanol, and also includes one or more of butanol, ethylene glycol, propylene glycol, polyvinylpyrrolidone, terpineol, ethyl cellulose, and butyl carbitol acetate.

8. A method for manufacturing a bonding membrane, the bonding membrane comprising a first protective layer, a first metal layer, a second metal layer, and a second protective layer, characterized in that, The method for manufacturing the connecting membrane includes: Take a metal foil and use the metal foil as a second metal layer. The second metal layer includes a first surface and a second surface that are disposed opposite to each other along its own thickness direction. The first metal layer is prepared on the first surface of the second metal layer; The first metal layer is subjected to a dealloying process to form a multiple nanoporous structure; The first protective layer is covered on the side of the first metal layer that is opposite to the second metal layer, and the second protective layer is covered on the side of the second metal layer that is opposite to the first metal layer.

9. The method for manufacturing the connecting membrane according to claim 8, characterized in that, The connecting membrane further includes a third metal layer. Before the step of performing a dealloying process on the first metal layer, the method for manufacturing the connecting membrane includes: The third metal layer is prepared on the second surface of the second metal layer.

10. The method for manufacturing the connecting membrane according to claim 9, characterized in that, After the step of preparing the third metal layer on the second surface of the second metal layer, the method for fabricating the connecting film includes: The third metal layer is subjected to a dealloying process to form multiple nanoporous structures.

11. The method for manufacturing the connecting membrane according to claim 9, characterized in that, The method for preparing the first metal layer is vacuum deposition, ion sputtering, arc cathode method, physical evaporation method or molecular beam epitaxy. The method for preparing the third metal layer is vacuum deposition, ion sputtering, arc cathode method, physical vapor deposition or molecular beam epitaxy.

12. The method for manufacturing the connecting membrane according to any one of claims 8 to 11, characterized in that, Prior to the step of covering the first protective layer and the second protective layer, the method for manufacturing the connecting membrane includes: Along the thickness direction of the connecting film, a first colloid is coated on the surface of the nanoporous structure opposite to the second metal layer, or the nanoporous structure is immersed in the first colloid. The nanoporous structure adsorbs the first colloid into the pores, thereby filling the nanoporous structure with the first colloid. The first colloid includes ethanol, and also includes one or more of butanol, ethylene glycol, propylene glycol, polyvinylpyrrolidone, terpineol, ethyl cellulose, and butyl carbitol acetate.

13. A semiconductor packaging method, characterized in that, The semiconductor packaging method includes: The method comprises a semiconductor, a substrate, and a connecting film, wherein the connecting film is prepared by the method for preparing the connecting film according to any one of claims 8 to 12; Remove the first protective layer; The first metal layer of the connecting film is attached to the semiconductor surface; Remove the second protective layer; The substrate is attached to the side of the bonding film opposite to the semiconductor; Pressure is applied to the semiconductor, the connecting film, and the substrate along the thickness direction of the connecting film to fix the semiconductor, the connecting film, and the substrate together.

14. The semiconductor packaging method according to claim 13, characterized in that, Prior to the step of removing the second protective layer, the semiconductor packaging method includes: The connecting film and the semiconductor are cut to form a plurality of monomers.

15. The semiconductor packaging method according to claim 13, characterized in that, Along the thickness direction of the connecting film, a photomodified adhesive or a thermally modified adhesive is disposed on the side of the second protective layer facing the second metal layer. After the step of cutting the connecting film and the semiconductor, and before the step of removing the second protective layer, the semiconductor packaging method includes: The connecting film is subjected to light treatment to make the light-modified adhesive lose its stickiness, or the connecting film is subjected to heat treatment to make the heat-modified adhesive lose its stickiness.

Images