Ignition device and semiconductor process apparatus

Abstract

The present application relates to the technical field of semiconductors. Disclosed are an ignition device and a semiconductor process apparatus. The ignition device comprises an ignition chamber, a first gas intake pipe for delivering a first gas, and a second gas intake pipe for delivering a second gas, wherein the ignition chamber comprises a combustion chamber and a purge gas inlet; the purge gas inlet, the first gas intake pipe and the second gas intake pipe are all in communication with the combustion chamber; and the inner surface of the combustion chamber is an arc-shaped concave surface, with the concave direction of the arc-shaped concave surface being a direction away from the central axis of the ignition chamber. The solution can solve the problem of purge blind spots being present in current ignition devices.

Description

Ignition device and semiconductor process equipment TECHNICAL FIELD

[0001] The present application belongs to the technical field of semiconductor, and particularly relates to an ignition device and semiconductor process equipment. BACKGROUND

[0002] In the field of semiconductor, an oxide film can be formed on a wafer by using an oxidation reaction. According to the gas used in the oxidation reaction, the thermal oxidation method can be divided into dry oxidation, wet oxidation and radical oxidation. Among them, the wet oxidation adopts the way of reacting oxygen, high-temperature water vapor (water) and wafer to generate an oxide film.

[0003] When generating an oxide film on the surface of the wafer by the wet oxidation reaction, the gas in the ignition chamber of the ignition device needs to be discharged by purging first, and then high-temperature hydrogen and oxygen are introduced into the ignition chamber. The two meet in the ignition chamber to burn hydrogen and oxygen, thereby generating high-temperature water vapor. At this time, the high-temperature water vapor is introduced into the process chamber to perform the wet oxidation reaction (referred to as wet oxygen reaction). However, the current ignition chamber has a purging blind spot during purging, which leads to safety problems during ignition.

[0004] Of course, the ignition device also has the above problems when used to ignite other gases. SUMMARY

[0005] The purpose of the embodiments of the present application is to provide an ignition device and semiconductor process equipment, which can solve the problem of the current ignition device having a purging blind spot.

[0006] In order to solve the above technical problems, according to the first aspect of the present application, the embodiments of the present application provide an ignition device, comprising an ignition chamber, a first gas inlet pipeline for conveying a first gas and a second gas inlet pipeline for conveying a second gas.

[0007] The ignition chamber comprises a combustion chamber and a purge gas inlet, the purge gas inlet, the first gas inlet pipeline and the second gas inlet pipeline are all in communication with the combustion chamber, the inner surface of the combustion chamber is an arc-shaped concave surface, and the concave direction of the arc-shaped concave surface is away from the central axis of the ignition chamber.

[0008] In the second aspect, the embodiments of the present application provide a semiconductor process equipment, comprising a semiconductor process chamber and the above-mentioned ignition device, and the ignition chamber of the ignition device is in communication with the semiconductor process chamber.

[0009] In the embodiment of the present application, the ignition chamber is provided with a purge gas inlet, the inner surface of the combustion chamber of the ignition chamber is an arc-shaped concave surface, the arc-shaped concave surface is recessed in the direction away from the central axis of the ignition chamber, and when the first gas inlet pipe and the second gas inlet pipe are both closed, the purge gas inlet can introduce purge gas into the ignition chamber to discharge the gas in the ignition chamber. In this scheme, since the inner surface of the combustion chamber is an arc-shaped concave surface, the curvature change is small, which can prevent the occurrence of a purge blind spot, and is beneficial to the complete discharge of the gas in the ignition chamber by the purge gas, thereby improving the safety of the ignition chamber to prevent safety problems in the subsequent ignition process. BRIEF DESCRIPTION OF DRAWINGS

[0010] Fig. 1 is a structural schematic diagram of an ignition device disclosed in an embodiment of the present application;

[0011] Fig. 2 is a structural design schematic diagram of an ignition device disclosed in an embodiment of the present application;

[0012] Fig. 3 is a structural schematic diagram of an ignition device disclosed in an embodiment of the present application in a purge stage, wherein arrow A is a purge gas;

[0013] Fig. 4 is a structural schematic diagram of an ignition device disclosed in an embodiment of the present application in a wet oxygen reaction starting stage, wherein arrow B is a first gas, and arrow C is a second gas;

[0014] Fig. 5 is a structural schematic diagram of an ignition device disclosed in an embodiment of the present application in a wet oxygen reaction sufficient stage, wherein arrow B is a first gas, arrow C is a second gas, and arrow D is a firelight;

[0015] Fig. 6 is a structural schematic diagram of an ignition device disclosed in an embodiment of the present application in a wet oxygen reaction abnormal stage, wherein arrow B is a first gas, arrow C is a second gas, and arrow D is a firelight;

[0016] Fig. 7 is a structural schematic diagram of a semiconductor process equipment disclosed in an embodiment of the present application.

[0017] Fig. 7 is a structural schematic diagram of a semiconductor process equipment disclosed in an embodiment of the present application. DETAILED DESCRIPTION

[0018] ​​​​​With reference to the drawings of the embodiments of the present application, the technical solutions in the embodiments of the present application will be clearly and completely described. Obviously, the described embodiments are only some of the embodiments of the present application, but not all of the embodiments of the present application. Based on the embodiments of the present application, all other embodiments obtained by those of ordinary skill in the art without creative efforts are within the scope of the present application.

[0019] The terms “first”, “second”, and the like in the specification and claims of the present application are used to distinguish similar objects, and are not used to describe a specific order or sequence. It should be understood that the data used in this way can be interchanged under appropriate circumstances, so that the embodiments of the present application can be implemented in an order other than those illustrated or described herein, and the objects distinguished by “first”, “second”, etc. are generally a category and do not limit the number of objects, for example, the first object can be one or more. In addition, “and / or” in the specification and claims indicates at least one of the connected objects, and the character “ / ” generally indicates that the front and rear associated objects are in an “or” relationship.

[0020] The ignition device and the semiconductor process equipment provided by the embodiments of the present application will be described in detail below with reference to the drawings and specific embodiments and application scenarios.

[0021] As shown in FIGS. 1-6, the present application discloses an ignition device, which comprises an ignition chamber 100, a first gas inlet pipe 200 and a second gas inlet pipe 300, the first gas inlet pipe 200 is used to transport the first gas, and the second gas inlet pipe 300 is used to transport the second gas. The ignition chamber 100 comprises a combustion chamber 130 and a purge gas inlet 110, the purge gas inlet 110, the first gas inlet pipe 200 and the second gas inlet pipe 300 are all communicated with the combustion chamber 130, the inner surface of the combustion chamber 130 is an arc-shaped concave surface, and the concave direction of the arc-shaped concave surface is away from the central axis of the ignition chamber 100.

[0022] In use, the ignition device has a first state and a second state, the first state is used to purge the inside of the ignition chamber 100, that is, the purge state, and the second state is used for ignition, that is, the ignition state.

[0023] When the ignition device is in the first state, the first gas inlet pipe 200 and the second gas inlet pipe 300 are both closed, and the purge gas inlet 110 is used to introduce the purge gas into the ignition chamber 100. Specifically, when the ignition device is in the first state and the purge gas inlet 110 introduces the purge gas into the ignition chamber 100, the purge gas will occupy the space in the ignition chamber 100, so as to drive out the gas previously existing in the ignition chamber 100, until the ignition chamber 100 is filled with the purge gas.

[0024] In the case that the ignition device is in the second state, the first gas is delivered into the ignition chamber 100 by the first gas inlet pipe 200, and the second gas is delivered into the ignition chamber 100 by the second gas inlet pipe 300, and the first gas and the second gas meet and combust in the ignition chamber 100.

[0025] In the embodiments of the present application, since the inner surface of the combustion chamber 130 of the ignition chamber 100 is an arc-shaped concave surface with a small change in curvature, the blowout blind spot can be prevented, and the gas in the ignition chamber 100 can be completely discharged by the purge gas, thereby improving the safety of the ignition chamber 100 to prevent safety problems in the subsequent ignition process. Therefore, the embodiments of the present application can solve the problem of the blowout blind spot in the existing ignition device.

[0026] In some embodiments, the ignition chamber 100 can be made of a high-temperature-resistant material to improve the service life of the ignition chamber 100.

[0027] It should be noted that one of the first gas and the second gas can be oxygen, and the other can be hydrogen, or can be other combustible gas, and the embodiments of the present application do not make specific limitations thereon. In addition, the purge gas can be the first gas or the second gas, or can be other gas, and the embodiments of the present application also do not make specific limitations thereon.

[0028] As shown in FIG. 1, the second gas inlet pipe 300 is sleeved outside the first gas inlet pipe 200, that is, an annular space formed between the inner surface of the second gas inlet pipe 300 and the outer surface of the first gas inlet pipe 200 is used to deliver the second gas.

[0029] In the example described in FIG. 1, the second gas inlet pipe 300 includes a first pipe segment 310 and a second pipe segment 320 connected in communication, the first pipe segment 310 is sleeved outside the first gas inlet pipe 200, and the central axis of the second pipe segment 320 is perpendicular to the central axis of the first pipe segment 310. The second gas inlet pipe 300 with this structure can facilitate the connection of the second gas inlet pipe 300 with the second gas source.

[0030] In some embodiments, the central axis of the first pipe segment 310 coincides with the central axis of the first gas inlet pipe 200, so that the distribution of the second gas in the annular space is more uniform.

[0031] In some embodiments, the width of the second pipe segment 320 can be smaller than the width of the first pipe segment 310, which can save the material for manufacturing the second gas inlet pipe 300.

[0032] In the embodiment shown in FIG. 1, the ignition chamber 100 has an exhaust portion and an intake portion arranged opposite to each other, both of which are communicated with the combustion chamber 130, the first intake pipeline 200 and the second intake pipeline 300 are arranged in the intake portion, and the flow area of the combustion chamber 130 gradually increases and then gradually decreases in the extension direction of the intake portion to the exhaust portion, so as to form a flame-like structure. When the first gas and the second gas are contacted and combusted in the ignition chamber 100 to generate a flame, the combustion chamber 130 provides a space for the flame, and the shape of the combustion chamber 130 is matched with the shape of the flame, so that the distance between the outer flame of the flame and the inner wall of the combustion chamber 130 is basically consistent, thereby making the inner wall of the combustion chamber 130 be heated more uniformly, and further improving the service life of the combustion chamber 130. Of course, the curvature radius of the arc-shaped concave surface close to the intake portion can also be greater than or equal to the curvature radius of the arc-shaped concave surface away from the intake portion; and the flow area of the combustion chamber 130 can also only gradually decrease in the extension direction of the intake portion to the exhaust portion, that is, the combustion chamber 130 has a conical structure.

[0033] It should be noted that, in the process of manufacturing the ignition chamber 100, the actual flame shape can be selected, and the embodiment of the present application does not make specific limitations.

[0034] It should be further noted that the purge gas inlet 110 can be arranged at any position of the intake portion, the exhaust portion or the like of the ignition chamber 100, and the embodiment of the present application does not make specific limitations.

[0035] For example, in another embodiment not shown in the figure, the ignition chamber 100 has an exhaust portion and an intake portion arranged opposite to each other, both of which are communicated with the combustion chamber 130, the purge gas inlet 110 can be arranged in the exhaust portion of the ignition chamber 100, and at this time, an exhaust hole needs to be arranged in the intake portion, so that the exhaust hole and the purge gas inlet 110 form an air flow channel in the case of the first state (purging state) of the ignition chamber 100, thereby discharging the gas previously existing in the ignition chamber 100 from the exhaust hole, avoiding the backflow of the gas, and further improving the purging efficiency.

[0036] In the embodiment shown in FIG. 1, the purge gas inlet 110 is arranged in the gas inlet portion, and the gas outlet 150 is arranged in the gas outlet portion. The purge gas inlet 110 is also used to introduce the second gas into the ignition chamber 100. The gas outlet 150 is used to discharge the first gas, the second gas, and / or the purge gas in the ignition chamber 100. When the ignition device is in the first state (i.e., the purge state), the purge gas inlet 110 can introduce the purge gas into the ignition chamber 100, and the gas outlet 150 forms a gas flow channel with the purge gas inlet 110, so as to discharge the gas previously existing in the ignition chamber 100 from the gas outlet 150. During this process, the gas outlet 150 is used to discharge the mixed gas of the purge gas and the original gas in the ignition chamber 100 until the original gas is completely discharged, so that the entire ignition chamber 100 is filled with the purge gas. This can avoid opening an additional gas discharge hole at the gas inlet end of the ignition chamber 100, thereby reducing the manufacturing difficulty of the ignition chamber 100 and improving the sealing performance of the ignition chamber 100. When the ignition device is in the second state (i.e., the ignition state), the first gas inlet pipe 200 and the second gas inlet pipe 300 are both opened, and the purge gas inlet 110 is used to introduce the second gas into the ignition chamber 100. The second gas can be fully combusted with the excess first gas in the ignition chamber 100, so as to avoid the excess first gas entering the semiconductor process chamber, thereby improving the utilization rate of the first gas. During this process, the gas outlet 150 can also be used to discharge the mixed gas of the gas (such as water vapor) generated by the combustion of the first gas and the second gas in the ignition chamber 100 and the excess second gas. Of course, a small amount of the first gas is inevitably mixed in the mixed gas.

[0037] In the embodiment shown in FIG. 1, the gas inlet portion includes a gas inlet pipe segment 160. The gas inlet pipe segment 160 and the combustion chamber 130 are coaxially arranged and in communication. In other words, the gas inlet pipe segment 160 corresponds to the gas inlet portion described above. As shown in FIG. 2, the combustion chamber 130 forms a combustion zone 131 and a stabilization zone 132 in communication. The stabilization zone 132 surrounds the combustion zone 131, i.e., the stabilization zone 132 is located between the inner surface of the combustion chamber 130 and the combustion zone 131. The purge gas inlet 110 can be arranged in the combustion chamber 130, or the purge gas inlet 110 is arranged in the gas inlet pipe segment 160. At least part of the second gas inlet pipe 300 extends into the gas inlet pipe segment 160. An annular channel is formed between the outer surface of the second gas inlet pipe 300 and the inner surface of the gas inlet pipe segment 160. The annular channel is directed towards the stabilization zone 132. The exhaust end of the first gas inlet pipe 200 is directed towards the combustion zone 131.

[0038] When the ignition device is in the first state, the purge gas inlet 110 introduces the purge gas into the ignition chamber 100, at this time the purge gas can flow directly to the inner surface of the ignition chamber 100, which is beneficial to improve the purging efficiency; when the ignition device is in the second state, the second gas introduced into the annular channel through the purge gas inlet 110 flows to the stable zone 132, which surrounds the flame, not only can burn with the excess first gas, but also forms a stable annular protective gas flow between the flame and the inner surface of the combustion chamber 130, to ensure that the distance between the outer flame of the flame and the inner surface of the combustion chamber 130 is substantially uniform, and the annular protective gas flow has a buffering effect, which can avoid the collision between the flame and the inner surface of the combustion chamber 130 when the flame fluctuates, thereby protecting the combustion chamber 130 to prolong the service life of the combustion chamber 130. In addition, the ignition chamber 100 with such a structure can preheat the second gas in the annular channel through the purge gas inlet 110 to reduce the temperature difference between the second gas and the combustion chamber 130, thereby improving the combustion stability of the flame in the combustion chamber 130. Of course, the above-mentioned embodiments can also not be provided with the gas inlet pipe section 160.

[0039] It should be noted that the connection between the combustion chamber 130 and the gas inlet pipe section 160 is a circular arc structure, which serves as a transition to gradually flow the second gas in the annular channel to the combustion chamber 130, thereby improving the flow stability of the second gas.

[0040] In some embodiments, the gas inlet pipe section 160 and the combustion chamber 130 can be an integrated structure, which not only facilitates installation, but also has good sealing performance.

[0041] In the embodiment as shown in FIG. 1, the ignition chamber 100 further includes a gas inlet connecting pipe 180, one end of the gas inlet connecting pipe 180 is in communication with the purge gas inlet 110, and the central axis of the gas inlet connecting pipe 180 is perpendicular to the central axis of the gas inlet pipe section 160.

[0042] In further embodiments, the ignition device further includes a reflective layer 400, which is arranged on the surface of the combustion chamber 130, and the reflective layer 400 is used to reflect part of the light to converge part of the light to the combustion zone 131, thereby achieving energy convergence, avoiding the first gas and the second gas from jumping during the combustion process, and further improving the safety of the ignition chamber 100, which is beneficial to prolong the service life of the ignition chamber 100. Of course, the reflective layer 400 can also not be provided, and the inner surface of the combustion chamber 130 can be directly used for energy convergence, but the reflectivity of the inner surface of the combustion chamber 130 is relatively low.

[0043] In the embodiment shown in FIG. 4, the light-reflecting layer 400 is arranged around the outer surface of the combustion chamber 130, and the light-reflecting layer 400 extends from one end of the combustion chamber 130 to the other end of the combustion chamber 130, i.e., the light-reflecting layer 400 covers the entire outer surface of the combustion chamber 130, so as to improve the light-reflecting efficiency of the light-reflecting layer 400. The light emitted by the flame passes through the combustion chamber 130 and irradiates the light-reflecting layer 400, and then is reflected by the light-reflecting layer 400 to the combustion zone 131, so as to realize energy convergence. In this scheme, the light-reflecting layer 400 is arranged around the outer surface of the combustion chamber 130, which not only can save the internal space of the combustion chamber 130, but also facilitates replacement of the light-reflecting layer 400 after damage.

[0044] In this embodiment, the combustion chamber 130 is of a light-transmitting structure, so as to realize that the light emitted by the flame passes through the combustion chamber 130 and irradiates the light-reflecting layer 400, and then is reflected by the light-reflecting layer 400 to the combustion zone 131, so as to realize energy convergence. For example, the combustion chamber 130 can be made of silica, and of course can be made of other light-transmitting structures, and the embodiments of the present application do not make specific limitations in this regard.

[0045] It should be noted that, in this embodiment, although the light-reflecting layer 400 is arranged around the outer surface of the combustion chamber 130, this is not restrictive, and in some embodiments not shown in the drawings, the light-reflecting layer 400 can also be arranged on the inner surface of the combustion chamber 130, and the embodiments of the present application do not make specific limitations in this regard.

[0046] In some embodiments, at least part of the first gas inlet pipe 200 extends into the gas inlet pipe section 160, and the first gas inlet pipe 200 has a first distance between the exhaust end and the combustion zone 131, and the second gas inlet pipe 300 has a second distance between the exhaust end and the combustion zone 131, and the first distance is greater than the second distance. At the exhaust port of the first gas inlet pipe 200, the second gas meets the first gas and burns, at this time, the part of the second gas inlet pipe 300 extending relative to the first gas inlet pipe 200 can provide a combustion space, and at the same time, this part of the pipe can converge the first gas and the second gas, so as to make them burn sufficiently. Of course, the first distance in the above-mentioned embodiment can also be equal to or less than the second distance.

[0047] In some embodiments, the first gas and the second gas can be heated first, and then introduced into the combustion chamber 130 through the first gas inlet pipe 200 and the second gas inlet pipe 300; and in the embodiment shown in FIG. 1, the ignition device further comprises a heating member 500, and the heating member 500 is sleeved on the gas inlet pipe section 160, i.e., the first gas and the second gas are heated when flowing in the first gas inlet pipe 200 and the second gas inlet pipe 300 to be about to enter the combustion chamber 130, which can avoid damage of the high-temperature gas to the first gas inlet pipe 200 and the second gas inlet pipe 300, thereby prolonging the service life of the two pipes.

[0048] In a further embodiment, the purge gas inlet 110 is in communication with the annular channel described above and is located on the side of the heating member 500 that is distal from the combustion chamber 130. When the ignition device is in the second state, the second gas introduced through the purge gas inlet 110 is heated in the annular channel and then enters the combustion chamber 130, thereby reducing the temperature difference between the second gas and the combustion chamber 130 and improving the combustion stability of the flame. Of course, the purge gas inlet 110 can also be located on the side of the heating member 500 that is proximal to the combustion chamber 130.

[0049] In yet another alternative embodiment, the flow area of the exhaust port 150 can be greater than or equal to the flow area of the intake pipe section 160; alternatively, the flow area of the exhaust port 150 can be less than the flow area of the intake pipe section 160. Since at least part of the second intake pipe 300 extends into the intake pipe section 160 and the second intake pipe 300 is sleeved outside the first intake pipe 200, when the flow area of the exhaust port 150 is less than the flow area of the intake pipe section 160, this facilitates the arrangement of the first intake pipe 200 and the second intake pipe 300, and since the flow area of the exhaust port 150 is small, the gas pressure in the ignition chamber 100 can be increased, thereby enabling the first gas and the second gas to be fully combusted.

[0050] In some embodiments not shown in the drawings, the exhaust port 150 can be directly formed in the combustion chamber 130; in the embodiment shown in FIG. 1, the exhaust portion includes an exhaust pipe section 170, in other words, the exhaust pipe section 170 corresponds to the exhaust portion described above, the intake pipe section 160, the combustion chamber 130 and the exhaust pipe section 170 are sequentially in communication, and the exhaust pipe section 170 is provided with the exhaust port 150, i.e., the port of the end of the exhaust pipe section 170 distal from the combustion chamber 130 is the exhaust port 150. This scheme facilitates the connection of the ignition device with other structures (such as a semiconductor process chamber) by providing the exhaust pipe section 170, and can enable the high-temperature water vapor generated by combustion in the combustion chamber 130 to be stabilized in the exhaust pipe section 170 before entering the semiconductor process chamber to participate in the process reaction.

[0051] Based on the ignition device disclosed in the present application, taking hydrogen as the first gas and oxygen as the second gas as an example, the working principle of the ignition device is as follows:

[0052] The purge stage: as shown in FIG. 3, the first intake pipe 200 and the second intake pipe 300 are closed, and the purge gas inlet 110 of the ignition chamber 100 is opened, so that the ignition device is in the first state. At this time, a purge gas is introduced into the ignition chamber 100 through the purge gas inlet 110, and the purge gas can be oxygen, so as to discharge the existing gas (such as nitrogen) in the ignition chamber 100 and fill the entire ignition chamber 100 with oxygen.

[0053] Wet oxygen reaction starting stage: as shown in Figure 4, continue to open the purge gas inlet 110 of the ignition chamber 100, oxygen can be introduced into the ignition chamber 100 at a small flow rate to maintain the oxygen environment of the stable zone 132, and the heating element 500 is turned on to raise the temperature to above the ignition temperature of hydrogen and oxygen, then the first gas inlet pipe 200 and the second gas inlet pipe 300 are turned on, and the oxygen and hydrogen are heated to above the ignition temperature, when the oxygen and hydrogen meet in the combustion chamber 130, combustion occurs and hydrogen-oxygen flame is generated to make the ignition device in the second state. In this stage, the flow rates of oxygen and hydrogen are both small, and the oxygen in the combustion zone 131 can fully react with excess hydrogen to ensure that the mixture of ideal state water vapor and oxygen near the exhaust port 150.

[0054] Wet oxygen reaction sufficient stage: increase the flow rates of oxygen and hydrogen, and the flow rates of oxygen and hydrogen delivered to the combustion zone 131 are also increased accordingly, as shown in Figure 5, since the combustion chamber 130 is a rotating body structure and combined with the reflective layer 400 on the outer surface of the combustion chamber 130, the reflection and collection of hydrogen-oxygen flame can be realized, the light of each rotating surface is converged to the central axis of the hydrogen-oxygen flame, so as to realize the re-concentration of combustion energy on the central axis, to ensure that the central axis of the combustion zone 131 maintains the highest combustion state, and to ensure the stability of the hydrogen-oxygen flame combustion; at the same time, the entire position inside the combustion chamber 130 is filled with oxygen, and the hydrogen gas that has not completed sufficient combustion at the exhaust end of the first gas inlet pipe 200 can be fully burned when passing through the central axis of the combustion zone 131, thereby preventing the occurrence of deflagration.

[0055] Wet oxygen reaction abnormal stage: when the hydrogen flow rate appears a short-term fluctuation, i.e. flow interruption, the hydrogen-oxygen flame also appears a short-term interruption, at this time, the combustion has a delay effect, as shown in Figure 6, the combustion energy can be reflected again to the central axis of the hydrogen-oxygen flame through the reflective layer 400, when the hydrogen after flow interruption enters the combustion zone 131 from the exhaust end of the first gas inlet pipe 200, since the central axis of the hydrogen-oxygen flame is still in a high energy state, the hydrogen re-entering the combustion zone 131 can be quickly burned, and the temperature difference between the hydrogen re-entering the combustion zone 131 and the combustion zone 131 is small, which can avoid the sudden deflagration and affect the service life of the ignition chamber 100.

[0056] It should be noted that the ignition device disclosed in the embodiments of the present application can also not be provided with the purge gas inlet 110. When the purge gas inlet 110 is not provided, oxygen is only provided through the second gas inlet pipeline 300, that is, oxygen is introduced into the ignition chamber 100 through the second gas inlet pipeline 300 for purging in the purging stage. However, when the ignition device is in the second state, the oxygen delivered by the second gas inlet pipeline 300 can fluctuate, which can cause fluctuations in the hydrogen-oxygen flame or insufficient combustion of hydrogen, and the like. However, under the reflection and convergence of the reflection layer 400, the insufficient combustion of hydrogen can be avoided.

[0057] When hydrogen cannot be supplied or the wet oxygen reaction is completed, the heating element 500, the purge gas inlet 110, the first gas inlet pipeline 200, and the second gas inlet pipeline 300 are closed.

[0058] As shown in FIG. 7, based on the ignition device disclosed in the embodiments of the present application, the embodiments of the present application also provide a semiconductor process equipment, which includes a semiconductor process chamber 600 and the ignition device described in any of the above embodiments. The ignition chamber 100 of the ignition device is in communication with the semiconductor process chamber 600.

[0059] In some embodiments, the semiconductor process chamber 600 includes a chamber body 610 and a connecting pipeline 620 connected to each other. The connecting pipeline 620 is located on one side of the chamber body 610. The connecting pipeline 620 and the chamber body 610 can be an integrated structure. The exhaust pipe section 170 of the ignition device can be in communication with the connecting pipeline 620 through a flange, so that the ignition chamber 100 is in communication with the chamber body 610. Alternatively, the exhaust pipe section 170 has a connecting flange 171, and the exhaust pipe section 170 is connected to the connecting pipeline 620 through the connecting flange 171.

[0060] In some embodiments, taking hydrogen as the first gas and oxygen as the second gas as an example, hydrogen and oxygen are combusted in the ignition chamber 100 to generate high-temperature water vapor, and the mixture of the high-temperature water vapor and oxygen enters the chamber body 610 through the connecting pipeline 620, and then reacts with a wafer to generate an oxide film.

[0061] The embodiments of the present application are described above in combination with the drawings, but the present application is not limited to the above specific embodiments. The above specific embodiments are only illustrative, but not restrictive. Those skilled in the art can make many forms under the inspiration of the present application without departing from the scope of the present application and the protection scope of the claims.

Claims

1. An ignition device, characterized by The ignition device comprises an ignition chamber (100), a first gas inlet pipeline (200) for conveying a first gas, and a second gas inlet pipeline (300) for conveying a second gas; The ignition chamber (100) comprises a combustion chamber (130) and a purge gas inlet (110), the purge gas inlet (110), the first gas inlet pipeline (200) and the second gas inlet pipeline (300) are all communicated with the combustion chamber (130), and an inner surface of the combustion chamber (130) is an arc-shaped concave surface, and a concave direction of the arc-shaped concave surface is a direction away from a central axis of the ignition chamber (100).

2. The ignition device of claim 1, wherein The ignition chamber (100) further comprises an air inlet part and an air outlet part arranged oppositely, the air outlet part and the air inlet part are both communicated with the combustion chamber (130), the first gas inlet pipeline (200) and the second gas inlet pipeline (300) are both arranged in the air inlet part, and in an extending direction of the air inlet part to the air outlet part, a flow area of the combustion chamber (130) gradually increases first and then gradually decreases.

3. The ignition device of claim 1, wherein The ignition chamber (100) further comprises an air outlet part and an air inlet part arranged oppositely, The purge gas inlet (110) is arranged in the air inlet part, and the purge gas inlet (110) is further used for introducing the second gas into the ignition chamber (100); The air outlet part is provided with an air outlet (150) for discharging the first gas, the second gas and / or purge gas in the ignition chamber (100).

4. The ignition device of claim 3, wherein The combustion chamber (130) is formed with a combustion zone (131) and a stabilization zone (132) communicated with each other, and the stabilization zone (132) surrounds the combustion zone (131); The air inlet part comprises an air inlet pipeline section (160), the air inlet pipeline section (160) and the combustion chamber (130) are coaxially arranged and communicated with each other, the purge gas inlet (110) is arranged in the air inlet pipeline section (160), at least part of the second gas inlet pipeline (300) extends into the air inlet pipeline section (160), an annular channel is formed between an outer surface of the second gas inlet pipeline (300) and an inner surface of the air inlet pipeline section (160), the annular channel is directed to the stabilization zone (132), and an exhaust end of the first gas inlet pipeline (200) is directed to the combustion zone (131).

5. The ignition device of claim 4, wherein The ignition device further comprises a light reflection layer (400), the light reflection layer (400) is arranged on a surface of the combustion chamber (130), and the light reflection layer (400) is used for reflecting part of light to converge the part of light to the combustion zone (131).

6. The ignition device of claim 5, wherein The combustion chamber (130) is a light-transmitting structure, the light reflection layer (400) is arranged around an outer surface of the combustion chamber (130), and the light reflection layer (400) extends from one end of the combustion chamber (130) to the other end of the combustion chamber (130).

7. The ignition device of claim 4, wherein At least part of the first air inlet pipe (200) extends into the air inlet pipe section (160), a first distance is between an exhaust end of the first air inlet pipe (200) and the combustion zone (131), a second distance is between an exhaust end of the second air inlet pipe (300) and the combustion zone (131), and the first distance is greater than the second distance.

8. The ignition device of claim 4, wherein The ignition device further comprises a heating member (500), the heating member (500) is sleeved on the air inlet pipe section (160), the purge gas inlet (110) is in communication with the annular channel, and is located on a side of the heating member (500) away from the combustion chamber (130).

9. The ignition device of claim 4, wherein A flow area of the exhaust port (150) is less than a flow area of the air inlet pipe section (160).

10. The ignition device of claim 4, wherein The exhaust part comprises an exhaust pipe section (170), the air inlet pipe section (160), the combustion chamber (130) and the exhaust pipe section (170) are sequentially in communication, and the exhaust pipe section (170) is provided with the exhaust port (150).

11. A semiconductor process apparatus, characterized by comprising: The ignition device of any one of claims 1 to 10, wherein the ignition chamber (100) of the ignition device is in communication with a semiconductor process chamber (600).

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