Method for manufacturing semiconductor glass substrate having brazing adhesive layer, and semiconductor glass substrate

Abstract

A method for manufacturing a semiconductor glass substrate having a brazing adhesive layer, and a semiconductor glass substrate are disclosed. The disclosed method for manufacturing a semiconductor glass substrate comprises the steps of: preparing a glass core; forming a brazing adhesive layer on the surface of the glass core by using a brazing alloy having a melting point lower than that of the glass core; forming an electrode layer on the brazing adhesive layer by using a conductive metal having a melting point higher than that of the brazing alloy; and performing heat treatment at a temperature greater than or equal to the eutectic point of the brazing alloy so that the brazing adhesive layer mediates strong interlayer bonding between the glass core and the electrode layer.

Description

Method for manufacturing a semiconductor glass substrate having a brazing adhesive layer and a semiconductor glass substrate

[0001] The present invention relates to a method for manufacturing a glass substrate, and more particularly, to a method for manufacturing a glass substrate for semiconductors with brazing adhesive layers and a glass substrate for semiconductors that can increase the adhesive strength of an electrode.

[0002] In the manufacturing of electronic components, implementing circuits on semiconductor wafers is called the Front-End (FE) process. Assembling the wafers into a usable state for actual products is called the Back-End (BE) process. This Back-End (BE) process includes the packaging (Multi-Chip Package) process, which assembles multiple semiconductors produced in wafer form into a bundle suitable for device integration.

[0003] Semiconductor technology is advancing in diverse forms, including sub-micron nanometer line widths, cell counts exceeding 10 million, high-speed operation, and high heat dissipation. However, the technology to perfectly package these devices remains relatively lacking. Consequently, the electrical performance of semiconductors is often determined more by packaging technology and the resulting electrical connections than by the semiconductor technology itself.

[0004] Ceramics or resins are commonly used as packaging substrate materials. However, ceramic substrates have high resistance and dielectric constants, making them difficult to mount high-performance, high-frequency semiconductor devices on. While resin substrates offer the advantage of relatively easy mounting of high-performance, high-frequency semiconductor devices, they have limitations in reducing wiring pitch, and their uneven surface makes them particularly unsuitable for use in high-performance semiconductor packaging, which is undergoing continuous miniaturization.

[0005] A method using smooth-surfaced silicon as an alternative packaging substrate has been developed, but this method has the disadvantages of being expensive and difficult to manufacture on a large scale. In particular, silicon packaging substrates have a high coefficient of thermal expansion (CTE), making them unsuitable for use in die packaging applications with high-density micro-sized bumps, such as those used in high-bandwidth memory (HBM).

[0006] Glass substrates are recently gaining attention as a potential replacement for silicon substrates. Glass substrates are more cost-effective than silicon substrates and can be designed and manufactured on larger surfaces, allowing for the production of multiple chips. Furthermore, the glass's extremely smooth and flat surface allows for fine circuit design, making it advantageous for implementing high-performance, high-density circuits.

[0007] However, when forming an electric wire (or electrode) on a glass substrate using a conductive metal that functions as an electrical connection medium, there is a problem in that the adhesive strength of the conductive metal is reduced due to the smooth surface of the glass substrate, and as a result, the conductive metal is easily peeled off from the glass substrate.

[0008] The technical problem to be solved by the present invention is to provide a method for manufacturing a semiconductor glass substrate and a semiconductor glass substrate that can significantly improve the adhesive strength of an electrode layer (electrical wiring) formed on a glass substrate using a conductive metal.

[0009] According to one aspect of the present invention as a means of solving the problem,

[0010] (a) a step of preparing a glass core; and

[0011] (b) a step of forming a brazing adhesive layer on the surface of the glass core using a brazing alloy having a lower melting point than the glass core;

[0012] (c) a step of forming an electrode layer on the brazing adhesive layer using a conductive metal having a higher melting point than the brazing alloy; and

[0013] (d) a step of performing heat treatment under specific conditions so that the brazing adhesive layer mediates interlayer bonding between the glass core and the electrode layer; a method for manufacturing a glass substrate for semiconductors having a brazing adhesive layer is provided.

[0014] In the step (a) of the method for manufacturing a semiconductor glass substrate according to one aspect of the present invention, the glass core may be an oxide-reinforced glass having a thickness of 20 to 30 μm and high strength, corrosion resistance, transparency, and hardness at room temperature.

[0015] In the step (a) of the method for manufacturing a semiconductor glass substrate according to one aspect of the present invention, the glass core may be borosilicate glass or aluminosilicate glass.

[0016] In the step (b) of the method for manufacturing a semiconductor glass substrate according to one aspect of the present invention, the brazing adhesive layer can be formed by depositing a brazing alloy to a first thickness on the surface of the glass core or on the inner wall surface of a micro-through hole formed on the surface of the glass core and the glass core through a sputtering process.

[0017] In the step (c) of the method for manufacturing a semiconductor glass substrate according to one aspect of the present invention, the electrode layer can be formed by depositing copper to a second thickness thicker than the first thickness on the brazing adhesive layer through an electrolytic plating or sputtering process.

[0018] Here, the first thickness may be 25 to 100 nm, and the second thickness may be 100 to 1000 nm.

[0019] In the step (d) of the method for manufacturing a semiconductor glass substrate according to one aspect of the present invention, heat treatment may be performed in a reducing atmosphere or nitrogen atmosphere maintained at a first temperature range that is higher than the eutectic point of the brazing alloy and lower than the melting point of the glass core.

[0020] In a method for manufacturing a semiconductor glass substrate according to one aspect of the present invention, the brazing alloy may be an aluminum-silicon (Al-Si) alloy in which the silicon (Si) content is 12.5 to 12.6 parts by weight (%) based on 100 parts by weight (%) of the entire alloy and the remainder is aluminum.

[0021] In this case, the first temperature range may be 577°C or more and less than 600°C.

[0022] According to another aspect of the present invention as a means of solving the problem,

[0023] A glass core having a first surface that is even and a second surface that is parallel to the first surface;

[0024] An electrode layer formed with a second thickness by a conductive metal on at least one of the first and second surfaces of the glass core; and

[0025] A brazing adhesive layer formed between the glass core and the electrode layer with a first thickness thinner than the second thickness by a brazing alloy, and forming a fusion brazing interface that mediates interlayer bonding between the glass core and the electrode layer during heat treatment;

[0026] A semiconductor glass substrate having a brazing adhesive layer, wherein the melting point of the brazing alloy is lower than the melting point of the glass core and the melting point of the conductive metal, is provided.

[0027] In a semiconductor glass substrate according to another aspect of the present invention, the glass core may be a tempered glass having a thickness of 20 to 30 μm and having high strength, corrosion resistance, transparency, and hardness at room temperature.

[0028] In a semiconductor glass substrate according to another aspect of the present invention, the glass core may preferably be borosilicate glass or aluminosilicate glass.

[0029] In a semiconductor glass substrate according to another aspect of the present invention, the first thickness may be 25 to 100 nm, and the second thickness may be 100 to 1000 nm.

[0030] In a semiconductor glass substrate according to another aspect of the present invention, the brazing alloy may be an aluminum-silicon (Al-Si) alloy in which the silicon (Si) content is 12.5 to 12.6 parts by weight (%) based on 100 parts by weight (%) of the total gold and the remainder is aluminum, and the conductive metal may be copper (Cu).

[0031] In another aspect of the present invention, the fusion brazing interface in a semiconductor glass substrate may be formed by performing heat treatment in a reducing atmosphere or nitrogen atmosphere maintained at a first temperature range that is higher than the eutectic point of the brazing alloy and lower than the melting point of the glass core.

[0032] Here, the first temperature range may be 577°C or more and less than 600°C.

[0033] A semiconductor glass substrate according to another aspect of the present invention may further include one or more microscopic through holes formed in the glass core.

[0034] At this time, the brazing adhesive layer and electrode layer can also be formed on the inner wall surface of the micro penetration hole.

[0035] According to the present invention, a brazing bonding layer is formed on the surface of a glass substrate using a brazing alloy, an electrode layer is formed thereon using a conductive metal, and then heat treatment is performed under specific conditions. During this heat treatment, a phase change (solid to liquid) in the brazing bonding layer causes a fusion brazing interface to form, mediating a strong interlayer bond between the glass core and the electrode layer.

[0036] As a result, the adhesion and bonding properties of the electrode layer to the glass substrate can be significantly improved or enhanced, and the problem of the prior art in which the electrode layer peels off from the organic substrate, adversely affecting performance or quality, can be clearly resolved. In other words, the adhesion and bonding properties of the electrode layer to the glass substrate can be improved, thereby providing a high-performance, high-quality semiconductor glass substrate.

[0037] FIG. 1 is a flowchart illustrating a method for manufacturing a semiconductor glass substrate according to an embodiment of the present invention.

[0038] FIG. 2 is a process schematic diagram schematically illustrating a manufacturing process of a semiconductor glass substrate according to an embodiment of the present invention.

[0039] FIG. 3 is a cross-sectional configuration diagram of a semiconductor glass substrate manufactured by a method for manufacturing a semiconductor glass substrate according to an embodiment of the present invention.

[0040] FIG. 4 is an enlarged view of the main part of the semiconductor glass substrate illustrated in FIG. 3, and is an enlarged view of the main part of the present invention, showing part 'A' of FIG. 3 in an enlarged manner.

[0041] Hereinafter, preferred embodiments of the present invention will be described in detail.

[0042] In describing embodiments of the present invention, identical or similar components will be assigned the same reference numbers, and redundant descriptions thereof will be omitted. Furthermore, if a detailed description of a related known technology is deemed to obscure the gist of the embodiments disclosed herein, such detailed description will be omitted.

[0043] In addition, the attached drawings are only intended to facilitate easy understanding of the embodiments disclosed in this specification, and the technical ideas disclosed in this specification are not limited by the attached drawings, and it is to be understood that all modifications, equivalents, or substitutes included in the spirit and technical scope of the present invention are included.

[0044] Additionally, terms including ordinal numbers, such as first, second, etc., may be used to describe various components, but the components are not limited by the terms. The terms are used only for the purpose of distinguishing one component from another.

[0045] Additionally, when a component is referred to as being "connected" or "connected" to another component, it should be understood that it may be directly connected or connected to that other component, but that there may also be other components in between.

[0046] On the other hand, when it is said that a component is "directly connected" or "directly connected" to another component, it should be understood that there are no other components in between.

[0047] In addition, it should be understood that terms such as “include,” “have,” and “have” used in describing embodiments of the present invention are intended to specify the presence of a feature, number, step, operation, component, part, or combination thereof of the invention, and do not preclude the possibility of the presence or addition of one or more other features, numbers, steps, operations, components, parts, or combinations thereof.

[0048] The drawings are intended solely to facilitate understanding of the invention and should not be construed as limiting the scope of the invention. Furthermore, it should be noted that relative thicknesses, lengths, and sizes in the drawings may be exaggerated for convenience and clarity of explanation.

[0049] FIG. 1 is a flowchart for explaining a method for manufacturing a semiconductor glass substrate according to an embodiment of the present invention, and FIG. 2 is a process schematic diagram schematically illustrating a process for manufacturing a semiconductor glass substrate according to an embodiment of the present invention.

[0050] Referring to FIGS. 1 and 2, a manufacturing method according to an embodiment is a method for manufacturing a semiconductor glass substrate capable of significantly improving the adhesive strength of an electrode layer, including a step of preparing a glass core (10) (S100), a step of forming a brazing adhesive layer (20) on the surface of the glass core (10) (S200), a step of forming an electrode layer (30) on the brazing adhesive layer (20) (S300), and a step of performing heat treatment under specific conditions (S400).

[0051] In the step (S100) of preparing a glass core, a glass core (10) having a predetermined thickness is prepared. In the step (S100) of preparing a glass core, a thin-film glass substrate having a thickness of 20 to 30 μm is prepared. In the step (S100) of preparing a glass core, the glass substrate may be tempered glass whose main component is oxide, which has high strength, corrosion resistance, transparency, and hardness at room temperature.

[0052] In the step of preparing a glass core (S100), the glass substrate may preferably be a borosilicate glass that is mainly composed of boric acid instead of silica, contains at least 5% of boric acid, has a low coefficient of expansion, has chemical resistance to acid and weather resistance, and has excellent thermal shock resistance.

[0053] In the step of preparing a glass core (S100), the glass substrate may be, as another example, aluminosilicate glass, which is made of alumina and boron oxide and has similar properties to borosilicate glass, but has superior heat resistance and high chemical resistance compared to borosilicate glass.

[0054] In some embodiments, in the step (S100) of preparing a glass core, a glass substrate having at least one micro-through hole (102) in the thickness direction may be prepared. Here, in forming the micro-through hole in the glass substrate, a LIDE (Laser induced Deep Etching) method may be applied, which involves pre-processing with a laser and then completing the micro-through hole through post-processing using chemical etching.

[0055] The LIDE method is a technology that creates microscopic through-holes in glass through a pre-processing step that creates microscopic holes by irradiating a laser at the location where the through-holes will be formed and induces a chemical phase change in the glass in that area, and a post-processing step that selectively etches only the glass that has been modified by the laser through a chemical etching process.

[0056] In the preprocessing step of the LIDE method, a femtosecond or picosecond laser is irradiated in the form of a Bessel beam at the location where a laser penetration hole is to be formed to locally deform the interior of the glass core, and in the postprocessing step, a method of selectively etching only the deformed portion through wet etching can be applied.

[0057] This utilizes the principle that when the glass core reacts with the etchant, the etching speed of the laser-treated internal deformation region progresses much faster than the etching speed of other parts, resulting in anisotropic etching rather than isotropic etching. Not only the through hole is etched by the etchant, but the surface of the glass core can also be etched at the same time.

[0058] This can also cause the glass core to thin during the etching process, resulting in a thickness thinner than the original substrate. Therefore, prior to wet etching, a pre-treatment step may be added to protect the remaining surface of the glass core, excluding the laser-treated portion, with masking film or the like to prevent surface etching of the glass core.

[0059] The step (S200) of forming a brazing adhesive layer is a step of forming a brazing adhesive layer (20) on the surface of the glass core (10) prepared in the aforementioned step S100 or on the surface of the glass core (10) and the inner wall surface of the micro-through hole (102) formed in the glass core (10).

[0060] In the step (S200) of forming a brazing adhesive layer, the brazing adhesive layer (20) is a part that mediates a strong bond between the glass core (10) and the electrode layer (30) to be described later, and can be formed by depositing a brazing alloy to a specific thickness on the surface of the glass core (10) or the surface of the glass core (10) and the inner wall surface of the micro-through hole (102).

[0061] In the step (S200) of forming a brazing bonding layer, the brazing alloy constituting the brazing bonding layer (20) may be an alloy having a lower melting point than the glass core (10). The brazing alloy constituting the brazing bonding layer (20) may preferably be an aluminum-silicon (Al-Si) alloy having a silicon (Si) content of 12.5 to 12.6 parts by weight (%) based on 100 parts by weight (%) of the total alloy and the remainder being aluminum.

[0062] Aluminum-silicon (Al-Si) alloys are characterized by their light weight, high ductility, and high malleability. They also possess a low melting point and shrinkage, excellent corrosion resistance, and good fluidity in a molten state. Therefore, they readily melt at relatively low temperatures, forming a fusion brazing interface between glass and metal, mediating a strong bond between them.

[0063] In the step (S200) of forming a brazing adhesive layer, the brazing adhesive layer (20) can be formed to a specific thickness on the surface of the glass core (10) through vacuum deposition. In the step (S200) of forming a brazing adhesive layer, the brazing adhesive layer (20) can be formed to a first thickness (t1) on the glass core (10) through a sputtering process, which is a type of vacuum deposition method.

[0064] In the step (S200) of forming a brazing adhesive layer, the thickness of the brazing adhesive layer (20) formed on the glass core (10), i.e., the first thickness (t1) mentioned above, may be 25 to 100 nm. If the thickness of the brazing adhesive layer (22) is too thin, less than 25 nm, it is difficult to properly perform its function as an adhesive, and if it exceeds 100 nm, an increase in cost may occur due to the input of unnecessary materials.

[0065] The step of forming an electrode layer (S300) is a step of forming an electrode layer (30) on the brazing adhesive layer (20) formed on the glass core (10) through the aforementioned step S200. In the step of forming an electrode layer (S300), the electrode layer (30) can be formed on the brazing adhesive layer (20) using a conductive metal having a higher melting point than the brazing alloy constituting the brazing adhesive layer (20).

[0066] In the step (S300) of forming an electrode layer, an electrode layer (30) can be formed on the surface of the brazing adhesive layer (20) with a second thickness (t2) that is thicker than the first thickness (t1) described above. In the step (S300) of forming an electrode layer, a conductive metal can be deposited on the surface of the brazing adhesive layer (20) with a second thickness (t2) through electroplating or sputtering, which is a type of vacuum deposition, to form the electrode layer (30).

[0067] In the step of forming an electrode layer (S300), the conductive metal constituting the electrode layer (30) may be copper (Cu), but is not limited thereto. The thickness of the electrode layer (30) formed by depositing a conductive metal, for example, copper (Cu), on the surface of the brazing adhesive layer (20) in the step of forming an electrode layer (S300), i.e., the second thickness (t2), may preferably be 100 to 1000 nm.

[0068] When forming an electrode layer (30) by electroplating or sputtering, a mask layer having a desired electrode pattern may be first formed on a brazing adhesive layer (20) and then the electrode layer (30) may be formed by performing electroplating or sputtering. In this case, a photolithography technique including, for example, a process of applying a photosensitive agent → heat treatment → exposure → development may be applied to the mask layer having the electrode pattern.

[0069] When the electrode layer (30) is formed on the surface of the brazing adhesive layer (20) with a specific thickness (second thickness, t2), heat treatment is performed as the final step. In the final step, the heat treatment step (S400), the heat treatment is performed at a temperature higher than the melting point of the aforementioned brazing alloy and lower than the melting point of the glass core ((10), thereby allowing the brazing adhesive layer (20) to mediate a strong interlayer bond between the glass core (10) and the electrode layer (30).

[0070] In the heat treatment step (S400), the heat treatment may be performed in a reducing atmosphere or nitrogen atmosphere maintained at a first temperature range that is higher than the eutectic point of the brazing alloy and lower than the melting point of the glass core (10). In the embodiment, the first temperature range is preferably 577°C or more and less than 600°C, considering that the eutectic temperature of an aluminum-silicon alloy having a silicon (Si) content of 12.5% ​​is 577°C.

[0071] The phase change (solid -> liquid) of the brazing adhesive layer (20) occurs by the above heat treatment performed above the eutectic point of the brazing alloy, and a fusion brazing interface that mediates a strong bond between the glass core (10) and the electrode layer (30) is formed according to the phase change of the brazing adhesive layer (20), so that the electrode layer (30) and the glass core (10) can form a strong interlayer bond.

[0072] Meanwhile, although not shown, a process for removing unnecessary deposits may be added after the heat treatment described above. For example, a process for removing brazing alloy deposited in areas other than the area where the electrode layer is formed may be added. For example, etching, which selectively corrodes and removes only the brazing alloy exposed to the outside, may be used in this step.

[0073] According to the manufacturing method discussed above, a brazing bonding layer is formed on the surface of a glass substrate using a brazing alloy, an electrode layer is formed thereon using a conductive metal, and then heat treatment is performed under specific conditions. During this heat treatment, the phase change (solid to liquid) of the brazing bonding layer creates a fusion brazing interface, which mediates a strong interlayer bond between the glass core and the electrode layer.

[0074] As a result, the adhesion and bonding properties of the electrode layer to the glass substrate can be significantly improved or enhanced, and the problem of the prior art in which the electrode layer peels off from the organic substrate, adversely affecting performance or quality, can be clearly resolved. In other words, the adhesion and bonding properties of the electrode layer to the glass substrate can be improved, thereby providing a high-performance, high-quality semiconductor glass substrate.

[0075] FIG. 3 is a cross-sectional view of a semiconductor glass substrate manufactured by the method for manufacturing a semiconductor glass substrate having the aforementioned brazing adhesive layer, and FIG. 4 is an enlarged view of the main part of the semiconductor glass substrate shown in FIG. 3, and is an enlarged view of the main part of the present invention showing part 'A' of FIG. 3.

[0076] Referring to FIGS. 3 and 4, a semiconductor glass substrate (1) includes a glass core (10), an electrode layer (30), and a brazing adhesive layer (20) between the glass core (10) and the electrode layer (30). The glass core (10) has a first surface (upper surface in the drawing, 12) that is even and a second surface (lower surface in the drawing, 14) that is parallel to the first surface, and the brazing adhesive layer (20) can be formed with a specific thickness on at least one of the first surface (12) and the second surface (14).

[0077] For reference, the drawing (Fig. 3) illustrates an example of a configuration in which a brazing adhesive layer (20) is formed on the first surface (12) of the glass core (10) and the inner wall surface of the micro-through hole (102), but is not limited thereto. Depending on the embodiment, the brazing adhesive layer (20) may be formed only on the second surface (14) and the inner wall surface of the micro-through hole (102), or the brazing adhesive layer (20) may be formed on all of the first surface (12), the second surface (14), and the inner wall surface of the micro-through hole (102).

[0078] The glass core (10) may be tempered glass having a thickness of 20 to 30 μm. In an embodiment, the glass core (10) may be tempered glass whose main component is oxide, having high strength, corrosion resistance, transparency, and hardness at room temperature. As a preferred example, the glass core (10) may be borosilicate tempered glass. Depending on the embodiment, it may also be aluminosilicate tempered glass.

[0079] Borosilicate tempered glass is a glass that uses boric acid as its main ingredient instead of silica, and contains at least 5% boric acid. It has a low coefficient of expansion, chemical resistance to acid and weather resistance, and excellent thermal shock resistance, making it suitable for semiconductor glass substrates. Aluminum silicate tempered glass is made of alumina and boron oxide, and has similar properties to borosilicate glass, but has superior heat resistance and high chemical resistance compared to borosilicate glass, making it suitable for semiconductor glass substrates.

[0080] One or more micro-through holes (102) may be formed in the thickness direction of the glass core (10). An electrode layer (30) may be formed on the inner wall surface of the micro-through hole (102). In this case, the electrode layer formed in the micro-through hole (102) may serve as an electrical connection path that electrically connects two glass substrates arranged in a laminated structure or a semiconductor chip mounted on a glass substrate and the glass substrate.

[0081] The micro-through hole (102) can be formed using the LIDE (Laser induced Deep Etching) method. The LIDE method is a technology for forming micro-through holes in glass through a pre-processing process that generates micro-holes by irradiating a laser to the location where the through hole is to be formed, inducing a chemical phase change in the glass in the corresponding area, and a post-processing process that selectively etches only the glass that has been transformed by the laser through a chemical etching process.

[0082] In the preprocessing step of the LIDE method, a femtosecond or picosecond laser in the form of a Bessel beam is irradiated to the location where the laser penetration hole is to be formed, thereby locally deforming the interior of the glass core. In the postprocessing step, wet etching can be used to selectively etch only the deformed area.

[0083] This utilizes the principle that when the glass core reacts with the etching liquid, the etching speed of the laser-treated internal deformation region progresses much faster than the etching speed of other parts, resulting in anisotropic etching rather than isotropic etching. Not only the through-holes are etched by the etching liquid, but the surface of the glass core can also be etched at the same time.

[0084] This can cause the glass core to thin during the etching process, making it thinner than the original substrate. Therefore, prior to wet etching, it is advisable to cover the remaining surface of the glass core, excluding the laser-treated portion, with masking film or other pretreatment to prevent surface etching of the glass core.

[0085] The brazing adhesive layer (20) may be formed with a specific thickness on at least one of the first side (12) and the second side (14) of the glass core (10), including the inner wall surface of the micro-through hole (102). The brazing adhesive layer (20) is a portion that mediates a strong interlayer bond between the glass core (10) and the electrode layer (30), and may be formed by depositing a brazing alloy with a specific thickness on the surface of the glass core (10).

[0086] The brazing alloy constituting the brazing bonding layer (20) may be an alloy having a lower melting point than the glass core (10). The brazing alloy constituting the brazing bonding layer (20) may preferably be an aluminum-silicon (Al-Si) alloy having a silicon (Si) content of 12.5 to 12.6 parts by weight (%) based on 100 parts by weight (%) of the total alloy and the remainder being aluminum (Al).

[0087] Aluminum-silicon (Al-Si) alloys are characterized by their light weight, high ductility, and high malleability. They also possess a low melting point and shrinkage, excellent corrosion resistance, and good fluidity in a molten state. Therefore, they readily melt at relatively low temperatures, forming a fusion brazing interface between glass and metal, mediating a strong bond between them.

[0088] The fusion brazing interface can be formed by performing a heat treatment in a reducing atmosphere or nitrogen atmosphere maintained at a first temperature range that is higher than the eutectic point of the brazing alloy and lower than the melting point of the glass core (10). In an embodiment, the first temperature range may be 577°C or more and less than 600°C, considering that the eutectic temperature of an aluminum-silicon alloy having a silicon (Si) content of 12.5% ​​is 577°C.

[0089] The brazing adhesive layer (20) can be formed with a first thickness (t1) on the surface (at least one of the first side and the second side) of the glass core (10) or on the surface and the inner wall surface of the micro-through hole (102) (if the micro-through hole is formed in the glass core) through a sputtering process, which is a type of vacuum deposition method.

[0090] The thickness of the brazing adhesive layer (20) formed on the glass core (10), i.e., the first thickness (t1), may be 25 to 100 nm. If the thickness of the brazing adhesive layer (22) is too thin, less than 25 nm, it may be difficult to properly perform its function as an adhesive, and if it exceeds 100 nm, an increase in cost may occur due to the input of excessive materials.

[0091] The electrode layer (30) may be made of a conductive metal. The electrode layer (30) may be formed on the brazing adhesive layer (20) to a second thickness (t2) that is thicker than the first thickness (t1). The electrode layer (30) may be formed by depositing a conductive metal on the surface of the brazing adhesive layer (20) to a second thickness (t2) through electroplating or sputtering, which is a type of vacuum deposition.

[0092] The conductive metal constituting the electrode layer (30) may be a conductive material having a higher melting point than the brazing alloy constituting the brazing adhesive layer (20). The conductive metal constituting the electrode layer (30) may preferably be copper (Cu), but is not limited thereto. The thickness of the electrode layer (30) formed by depositing a conductive metal, for example, copper (Cu), on the surface of the brazing adhesive layer (20), i.e., the second thickness (t2), may be 100 to 1000 nm.

[0093] A semiconductor glass substrate having such a configuration forms a brazing bonding layer using a brazing alloy between a glass core and an electrode layer. The brazing bonding interface formed by the phase change (solid to liquid) of the brazing bonding layer, which is formed by heat treatment under specific temperature conditions, mediates a strong interlayer bonding between the glass core and the electrode layer. Accordingly, the adhesive strength and adhesive properties of the electrode layer can be significantly enhanced or improved.

[0094] The above description is merely an example of the technical idea of ​​the present invention, and those skilled in the art will appreciate that various modifications and variations can be made without departing from the essential characteristics of the present invention.

[0095] Accordingly, the embodiments disclosed in the present invention are intended to illustrate, rather than limit, the technical concept of the present invention, and the scope of the technical concept of the present invention is not limited by these embodiments. The scope of protection of the present invention should be interpreted by the following claims, and all technical concepts within the scope equivalent thereto should be construed as being included within the scope of the present invention.

Claims

1. (a) Step of preparing a glass core; (b) a step of forming a brazing adhesive layer on the surface of the glass core using a brazing alloy having a lower melting point than the glass core; (c) a step of forming an electrode layer on the brazing adhesive layer using a conductive metal having a higher melting point than the brazing alloy; and (d) a step of performing heat treatment under specific conditions so that the brazing adhesive layer mediates interlayer bonding between the glass core and the electrode layer; a method for manufacturing a glass substrate for semiconductors having a brazing adhesive layer.

2. In paragraph 1, In the above step (a), the glass core, A method for manufacturing a semiconductor glass substrate having a brazing adhesive layer, which is an oxide-reinforced glass having a thickness of 20 to 30 μm and high strength, corrosion resistance, transparency, and hardness at room temperature.

3. In paragraph 2, The above glass core, A method for manufacturing a semiconductor glass substrate having a brazing adhesive layer made of borosilicate glass or aluminosilicate glass.

4. In paragraph 1, In the step (b), the brazing adhesive layer is formed by depositing a brazing alloy to a first thickness on the surface of the glass core or on the inner wall of the micro-through hole formed on the surface of the glass core and the glass core through a sputtering process. A method for manufacturing a semiconductor glass substrate having a brazing bonding layer, wherein in the step (c), copper is deposited on the brazing bonding layer to a second thickness thicker than the first thickness through an electrolytic plating or sputtering process to form the electrode layer.

5. In paragraph 4, The above first thickness is 25 to 100 nm, A method for manufacturing a semiconductor glass substrate having a brazing adhesive layer, wherein the second thickness is 100 to 1000 nm.

6. In paragraph 1, In step (d) above, A method for manufacturing a semiconductor glass substrate having a brazing adhesive layer, wherein heat treatment is performed in a reducing atmosphere or nitrogen atmosphere maintained at a first temperature range higher than the eutectic point of the brazing alloy and lower than the melting point of the glass core.

7. In paragraph 6, A method for manufacturing a semiconductor glass substrate having a brazing adhesive layer, wherein the first temperature range is 577°C or more and less than 600°C.

8. In paragraph 1 or paragraph 6, The above brazing alloy is an aluminum-silicon (Al-Si) alloy, A method for manufacturing a semiconductor glass substrate having a brazing adhesive layer, wherein the aluminum-silicon alloy has a silicon (Si) content of 12.5 to 12.6 parts by weight (%) based on 100 parts by weight (%) of the total alloy and the remainder is aluminum.

9. A glass core having a first surface that is even and a second surface that is parallel to the first surface; An electrode layer formed with a second thickness by a conductive metal on at least one of the first and second surfaces of the glass core; and A brazing adhesive layer formed between the glass core and the electrode layer with a first thickness thinner than the second thickness by a brazing alloy, and forming a fusion brazing interface that mediates interlayer bonding between the glass core and the electrode layer during heat treatment; A semiconductor glass substrate having a brazing adhesive layer, wherein the melting point of the brazing alloy is lower than the melting point of the glass core and the melting point of the conductive metal.

10. In paragraph 9, The above glass core, A semiconductor glass substrate having a brazing adhesive layer, which is an oxide-reinforced glass with a thickness of 20 to 30 μm and has high strength, corrosion resistance, transparency, and hardness at room temperature.

11. In paragraph 10, The above glass core, A semiconductor glass substrate having a brazing adhesive layer made of borosilicate glass or aluminosilicate glass.

12. In paragraph 9, The above first thickness is 25 to 100 nm, A semiconductor glass substrate having a brazing adhesive layer having a second thickness of 100 to 1000 nm.

13. In paragraph 9, The above brazing alloy is an aluminum-silicon (Al-Si) alloy in which the silicon (Si) content is 12.5 to 12.6 parts by weight (%) based on 100 parts by weight (%) of the total alloy and the remainder is aluminum. A semiconductor glass substrate having a brazing adhesive layer, wherein the conductive metal is copper (Cu).

14. In paragraph 13, A semiconductor glass substrate having a brazing adhesive layer, wherein the fusion brazing interface is formed by performing heat treatment in a reducing atmosphere or nitrogen atmosphere maintained at a first temperature range higher than the eutectic point of the brazing alloy and lower than the melting point of the glass core.

15. In paragraph 14, A semiconductor glass substrate having a brazing adhesive layer, wherein the first temperature range is 577°C or more and less than 600°C.

16. In paragraph 9, Further comprising one or more microscopic through holes formed in the glass core, A glass substrate for a reaction body, in which the brazing adhesive layer and the electrode layer are formed on the inner wall surface of the micro-through hole.

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