Inspection method and system using phased-array transverse wave for flaw detection of plate material, electronic device and medium

By using a phased array shear wave flaw detection method, the shear wave wavelength and probe parameters are calculated, which solves the problem of missed detection of vertical through holes in A-type pulse longitudinal wave detection and realizes efficient detection of steel base material for welded pipelines.

WO2026021429A1PCT designated stage Publication Date: 2026-01-29WUHAN ZHONGKE INNOVATION TECHNOLOGY CO LTD
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Patent Information

Application Number
PCT/CN2025/109847
Authority / Receiving Office
WO · WO
Patent Type
Applications
Current Assignee / Owner
Priority Date
2024-07-23
Filing Date
2025-07-22
Publication Date
2026-01-29

AI Technical Summary

Technical Problem

Existing A-type pulse longitudinal wave inspection is prone to missing 1.6mm vertical through hole defects when welding pipeline steel base material, and the fixed probe size limits the detection thickness.

Method used

The phased array shear wave flaw detection method is adopted. By acquiring the sound velocity, probe frequency, crystal length and delay block thickness, the shear wave wavelength, frequency range and crystal half beam diffusion angle are calculated to determine the probe aperture active shaft size, so as to realize the detection of vertical through holes.

Benefits of technology

It improves the detection accuracy of 1.6mm vertical through-hole defects, expands the detection thickness range, and reduces the phenomenon of missed detection of troughs.

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Abstract

The present invention relates to an inspection method and system using a phased-array transverse wave for flaw detection of a plate material, an electronic device and a medium. The method comprises: acquiring the acoustic velocity of a phased-array transverse wave in a target plate material, the frequency of a phased-array probe element, the short-edge length of the phased-array probe element, and the thickness of a delay block; on the basis of the diameter of a vertical through hole to be inspected in the target plate material, determining a maximum value of the wavelength of the transverse wave; on the basis of the maximum value of the wavelength of the transverse wave and the acoustic velocity of the transverse wave in the target plate material, determining a frequency range of the probe; on the basis of the acoustic velocity of the phased-array transverse wave in the target plate material, the frequency of the phased-array probe, and the short-edge length of the phased-array probe element, determining a single element half-beam divergence angle of the probe; on the basis of the thickness of the delay block and the single element half-beam divergence angle, determining a probe aperture dimension along the principal axis; and, on the basis of the probe aperture dimension along the principal axis and the frequency of the probe, performing detection on the vertical through hole in the target plate material. The phased-array transverse wave in the present invention can detect defects of 1.6 mm vertical through holes in plate materials.
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Description

Phased array shear wave flaw detection methods, systems, electronic equipment and media for sheet metal Technical Field

[0001] This invention relates to the field of ultrasonic testing technology, and in particular to a phased array transverse wave flaw detection method, system, electronic equipment, and medium for plate materials. Background Technology

[0002] Phased array technology, by cutting a large A-mode ultrasound probe wafer into many small units and using phase control technology to excite each small unit, forms many virtual A-mode ultrasound probes, thereby greatly reducing the occurrence of troughs and making the sound beam more uniform.

[0003] Currently, some medium and heavy plates are used as the base material for pipeline steel, which is formed by rolling the plates in a certain way and then welding them into pipes. During welding, the quality of the plate edges is crucial, directly affecting the weld quality. Traditional A-pulse longitudinal wave testing requires array-widened sound beam coverage to completely cover the plate edges. However, the array probe has many troughs in the middle of the sound beam coverage area, easily leading to missed detections of natural defects or inaccurate quantification of defects. This is particularly true for defects in the 1.6mm vertical through-hole of current welded pipe inspection standards, where missed detections are more likely. Furthermore, A-pulse longitudinal wave testing has a single focal length and fixed probe size, severely limiting the thickness of the target object being inspected. Summary of the Invention

[0004] In view of this, it is necessary to provide a phased array transverse wave flaw detection method, system, electronic equipment and medium for plate materials to solve the problem of missed detection of defects in 1.6mm vertical through holes by A-type pulse longitudinal wave detection.

[0005] To address the aforementioned problems, this invention provides a phased array transverse wave flaw detection method for sheet metal, comprising:

[0006] The sound velocity of the phased array transverse wave in the target plate, the frequency of the phased array probe chip, the length of the short side of the phased array probe chip, and the thickness of the delay block are obtained.

[0007] The maximum value of the transverse wave wavelength is determined based on the diameter of the vertical through-hole to be detected in the target material.

[0008] The frequency range of the probe is determined based on the maximum value of the transverse wave wavelength and the sound velocity of the transverse wave in the target plate.

[0009] The single-crystal half-beam diffusion angle of the probe is determined based on the sound velocity of the phased array shear wave in the target plate, the frequency of the phased array probe, and the length of the short side of the phased array probe crystal.

[0010] The probe aperture and active shaft size are determined based on the thickness of the delay block and the half-beam diffusion angle of the single wafer.

[0011] The vertical through holes in the target plate are detected based on the probe aperture, active shaft size, and probe frequency.

[0012] In some possible implementations, the incident angle of the phased array shear wave is 35° to 55°.

[0013] In some possible implementations, the maximum value of the transverse wave wavelength is equal to twice the size of the vertical through-hole diameter, which is 1.6 mm.

[0014] In some possible implementations, the maximum value of the transverse wave velocity in the target plate divided by the transverse wave wavelength equals the minimum frequency of the probe.

[0015] In some possible implementations, the formula for calculating the single-chip half-beam spread angle of the probe is:

[0016] α = arcsin(0.44c / fe)

[0017] In the formula, α represents the half-beam diffusion angle of a single crystal of the probe; c represents the sound velocity of the phased array transverse wave in the target plate; f represents the frequency of the probe; and e represents the length of the short side of the probe crystal.

[0018] In some possible implementations, the probe aperture drive shaft size satisfies the following condition:

[0019] H 延 ×tgα 电 ≥A / 2

[0020] In the formula, H 延 The thickness of the delay block is represented by tg; tangent is represented by A; the probe aperture and drive shaft size are represented by α. 电 This indicates the maximum half-beam spread angle of a single crystal in the probe.

[0021] In some possible implementations, the delay block is a water layer.

[0022] On the other hand, the present invention also provides a plate phased array shear wave flaw detection system, including a microprocessor and a memory interconnected, characterized in that the microprocessor is programmed or configured to execute the steps in the plate phased array shear wave flaw detection method described in any of the above implementations.

[0023] On the other hand, the present invention also provides an electronic device, characterized in that it includes a memory and a processor, wherein,

[0024] The memory is used to store programs;

[0025] The processor, coupled to the memory, is used to execute the program stored in the memory to implement the steps in the plate phased array shear wave flaw detection method described in any of the above implementations.

[0026] On the other hand, the present invention also provides a computer-readable storage medium for storing a computer-readable program or instruction, which, when executed by a processor, can implement the steps in the plate phased array shear wave flaw detection method described in any of the above implementations.

[0027] The beneficial effects of the above embodiments are as follows: The phased array shear wave flaw detection method for plate materials provided by the present invention determines the maximum value of the shear wave wavelength based on the diameter of the vertical through-hole to be detected in the target plate material. Further, it determines the frequency range of the probe based on the maximum value of the shear wave wavelength and the sound velocity of the shear wave in the target plate material. Further, it determines the half-beam diffusion angle of a single crystal based on the sound velocity of the shear wave in the target plate material, the frequency of the probe, and the length of the short side of the probe crystal. Further, it determines the probe aperture active shaft size based on the thickness of the delay block and the half-beam diffusion angle of a single crystal, thereby detecting the vertical through-hole in the target plate material. The phased array shear wave of the present invention can detect vertical through-holes in plate materials. Attached Figure Description

[0028] Figure 1 is a flowchart of an embodiment of a phased array transverse wave flaw detection method for plate provided by the present invention;

[0029] Figure 2 is a schematic diagram of an embodiment of the electronic device provided by the present invention. Detailed Implementation

[0030] Preferred embodiments of the present invention will now be described in detail with reference to the accompanying drawings, which form part of this application and are used together with the embodiments of the present invention to illustrate the principles of the present invention, but are not intended to limit the scope of the present invention.

[0031] Please refer to Figure 1. Figure 1 is a flowchart illustrating an embodiment of a phased array shear wave flaw detection method for plate materials provided by the present invention. A specific embodiment of the present invention discloses a phased array shear wave flaw detection method for plate materials, comprising:

[0032] S101. Obtain the sound velocity of the phased array transverse wave in the target plate, the frequency of the phased array probe chip, the length of the short side of the phased array probe chip, and the thickness of the delay block.

[0033] S102. Determine the maximum value of the transverse wave wavelength based on the diameter of the vertical through hole to be detected in the target material.

[0034] S103. Determine the frequency range of the probe based on the maximum value of the transverse wave wavelength and the sound velocity of the transverse wave in the target plate.

[0035] S104. Determine the single-crystal half-beam diffusion angle of the probe based on the sound velocity of the phased array transverse wave in the target plate, the frequency of the phased array probe, and the length of the short side of the phased array probe crystal.

[0036] S105. Determine the probe aperture active shaft size based on the thickness of the delay block and the half-beam diffusion angle of the single wafer;

[0037] S106. Detect the vertical through holes in the target plate based on the probe aperture and active shaft size and the probe frequency.

[0038] Compared with existing technologies, this embodiment provides a phased array shear wave flaw detection method for plate materials. It determines the maximum value of the shear wave wavelength based on the diameter of the vertical through-hole to be detected in the target plate material. Further, it determines the frequency range of the probe based on the maximum shear wave wavelength and the sound velocity of the shear wave in the target plate material. Further, it determines the half-beam diffusion angle of a single crystal based on the sound velocity of the shear wave in the target plate material, the probe frequency, and the length of the short side of the probe crystal. Finally, it determines the probe aperture active shaft size based on the thickness of the delay block and the half-beam diffusion angle of a single crystal, thereby detecting vertical through-holes in the target plate material. The phased array shear wave of this invention can detect vertical through-holes in plate materials.

[0039] It should be noted that, for shear wave detection of the board material, by analyzing the reflectivity at the incident angle of the shear wave, 100% reflection can be obtained when the shear wave incident angle is between 35° and 55°. In some embodiments of the present invention, the incident angle of the phased array shear wave is between 35° and 55°.

[0040] In some embodiments of the present invention, the maximum value of the transverse wave wavelength is equal to twice the size of the vertical through-hole diameter, which is 1.6 mm.

[0041] In some embodiments of the present invention, the maximum value of the sound velocity of the transverse wave in the target plate divided by the wavelength of the transverse wave is equal to the minimum frequency of the probe.

[0042] It should be noted that when using phased array technology to detect damage along the board width, the probe needs to be reused to face both the outward and inward directions, in which case the phased array electronic deflection mode is used. The angular deflection capability of the phased array probe is determined by the combination of the crystal size and the probe frequency. In some embodiments of the present invention, the formula for calculating the half-beam diffusion angle of a single crystal of the probe is:

[0043] α = arcsin(0.44c / fe)

[0044] In the formula, α represents the half-beam diffusion angle of a single crystal of the probe; c represents the sound velocity of the phased array transverse wave in the target plate; f represents the frequency of the probe; and e represents the length of the short side of the probe crystal.

[0045] It should be noted that when using electronic angle deflection, the size of a single array element chip of the probe must not exceed half the wavelength in the material; otherwise, it is easy to generate grating lobe waves that affect detection.

[0046] It should be noted that, in order for each element in the probe aperture to function effectively, the diffusion angle of the first and last element wafers in the probe aperture must cover the central emission point. In some embodiments of the present invention, the size of the probe aperture's active shaft satisfies the following condition:

[0047] H 延 ×tgα 电 ≥A / 2

[0048] In the formula, H 延 The thickness of the delay block is indicated; tg represents the tangent, used to represent the ratio of the opposite side to the adjacent side of an angle in a right triangle; A represents the probe aperture active shaft dimension; α 电 This indicates the maximum half-beam spread angle of a single crystal in the probe.

[0049] In some embodiments of the present invention, the delay block is a water layer.

[0050] In a specific embodiment of the present invention, the center-to-center spacing of the wafers is 0.648 mm, and half of the aperture is A / 2 = 8 × 0.648 = 5.184 mm. At a frequency of 2.5 MHz, the maximum achievable acoustic diffusion angle (-6 dB) is 28.8° × 2 = 57.6°. Based on the preset water layer of 2 mm, 2 × tan57.6 = 3.15 mm, which does not meet the above requirement. Therefore, the wafer size needs to be further reduced. Based on the aforementioned recommended aperture of 8-12 mm, using 8 mm results in half the aperture being 4 mm, reducing the wafer size to 0.5 mm. At this point, the maximum acoustic diffusion angle (-6 dB) is 31.9° × 2 = 63.8°. Based on the preset water layer of 2 mm, 2 × tan63.8 = 4.06 mm, which satisfies the above formula.

[0051] Accordingly, this application also provides a plate phased array shear wave flaw detection system, including a processor and a memory connected to each other, wherein the processor is programmed or configured to execute the steps or functions of the plate phased array shear wave flaw detection method provided in the above-described method embodiments.

[0052] As shown in Figure 2, the present invention also provides an electronic device 200. The electronic device 200 includes a processor 201, a memory 202, and a display 203. Figure 2 only shows some components of the electronic device 200; however, it should be understood that it is not required to implement all the components shown, and more or fewer components may be implemented alternatively.

[0053] In some embodiments, processor 201 may be a central processing unit (CPU), microprocessor, or other data processing chip, used to run program code stored in memory 202 or process data, such as a plate phased array transverse wave flaw detection method in this invention.

[0054] In some embodiments, processor 201 may be a single server or a group of servers. The server group may be centralized or distributed. In some embodiments, processor 201 may be local or remote. In some embodiments, processor 201 may be implemented on a cloud platform. In one embodiment, the cloud platform may include a private cloud, public cloud, hybrid cloud, community cloud, distributed cloud, intranet, multi-cloud, etc., or any combination thereof.

[0055] In some embodiments, memory 202 may be an internal storage unit of electronic device 200, such as a hard disk or memory of electronic device 200. In other embodiments, memory 202 may also be an external storage device of electronic device 200, such as a plug-in hard disk, smart media card (SMC), secure digital (SD) card, flash card, etc. equipped on electronic device 200.

[0056] Furthermore, the memory 202 may include both internal storage units of the electronic device 200 and external storage devices. The memory 202 is used to store application software and various types of data installed on the electronic device 200.

[0057] In some embodiments, display 203 may be an LED display, a liquid crystal display, a touch-sensitive liquid crystal display, or an OLED (Organic Light-Emitting Diode) touchscreen. Display 203 is used to display information from electronic device 200 and to display a visual user interface. Components 201-203 of electronic device 200 communicate with each other via a system bus.

[0058] In one embodiment, when the processor 201 executes a phased array shear wave flaw detection program for a plate material stored in the memory 202, the following steps can be implemented:

[0059] The sound velocity of the phased array transverse wave in the target plate, the frequency of the phased array probe chip, the length of the short side of the phased array probe chip, and the thickness of the delay block are obtained.

[0060] The maximum value of the transverse wave wavelength is determined based on the diameter of the vertical through-hole to be detected in the target material.

[0061] The frequency range of the probe is determined based on the maximum value of the transverse wave wavelength and the sound velocity of the transverse wave in the target plate.

[0062] The single-crystal half-beam diffusion angle of the probe is determined based on the sound velocity of the phased array shear wave in the target plate, the frequency of the phased array probe, and the length of the short side of the phased array probe crystal.

[0063] The probe aperture and active shaft size are determined based on the thickness of the delay block and the half-beam diffusion angle of the single wafer.

[0064] The vertical through holes in the target plate are detected based on the probe aperture, active shaft size, and probe frequency.

[0065] It should be understood that when the processor 201 executes a phased array transverse wave flaw detection program for a plate material in the memory 202, in addition to the functions mentioned above, it can also perform other functions, as can be found in the description of the corresponding method embodiments above.

[0066] Furthermore, the embodiments of the present invention do not specifically limit the type of electronic device 200 mentioned. Electronic device 200 can be a mobile phone, tablet computer, personal digital assistant (PDA), wearable device, laptop computer, or other portable electronic device. Exemplary embodiments of portable electronic devices include, but are not limited to, portable electronic devices running iOS, Android, Microsoft, or other operating systems. The aforementioned portable electronic device can also be other portable electronic devices, such as a laptop computer with a touch-sensitive surface (e.g., a touch panel). It should also be understood that in some other embodiments of the present invention, electronic device 200 may not be a portable electronic device, but rather a desktop computer with a touch-sensitive surface (e.g., a touch panel).

[0067] Accordingly, this application also provides a computer-readable storage medium for storing computer-readable programs or instructions. When the programs or instructions are executed by a processor, they can implement the steps or functions of the plate phased array shear wave flaw detection method provided in the above-described method embodiments.

[0068] Those skilled in the art will understand that all or part of the processes of the methods described in the above embodiments can be implemented by a computer program instructing related hardware, and the program can be stored in a computer-readable storage medium. The computer-readable storage medium may be a disk, optical disk, read-only memory, or random access memory, etc.

[0069] The above description is only a preferred embodiment of the present invention, but the scope of protection of the present invention is not limited thereto. Any changes or substitutions that can be easily conceived by those skilled in the art within the scope of the technology disclosed in the present invention should be included within the scope of protection of the present invention.

Claims

1. A method for detecting defects in a plate by using a phased array of shear waves, characterized in that, The method comprises the following steps: acquiring the sound velocity of the phased array transverse wave in the target plate, the frequency of the phased array probe wafer, the length of the short side of the phased array probe wafer, and the thickness of the delay block; determining the maximum value of the transverse wave wavelength according to the size of the vertical via diameter to be detected in the target plate; determining the frequency range of the probe according to the maximum value of the transverse wave wavelength and the sound velocity of the transverse wave in the target plate; determining the single wafer half-beam spreading angle of the probe according to the sound velocity of the phased array transverse wave in the target plate, the frequency of the phased array probe, and the length of the short side of the phased array probe wafer; determining the probe aperture active axis size according to the thickness of the delay block and the single wafer half-beam spreading angle; detecting the vertical via in the target plate based on the probe aperture active axis size and the probe frequency; the probe aperture active axis size satisfies the condition that: H 延 ×tgα 电 ≥A / 2 where H 延 represents the thickness of the delay block; tg represents tangent; A represents the active axis dimension of the probe aperture; a 电 represents the maximum single wafer half-beam spread angle of the probe.

2. The method of claim 1, wherein, the incident angle of the phased array transverse wave is 35°-55°.

3. The method of claim 1, wherein, the maximum value of the transverse wave wavelength is equal to twice the size of the vertical via diameter, and the vertical via diameter is 1.6 mm.

4. The method of claim 1, wherein, the sound velocity of the transverse wave in the target plate divided by the maximum value of the transverse wave wavelength is equal to the minimum frequency of the probe.

5. The method of claim 1, wherein, The calculation formula of the single wafer half-beam spreading angle of the probe is: α=arcsin(0.44c / fe) In the formula, α represents the single wafer half-beam spreading angle of the probe; c represents the sound velocity of the phased array transverse wave in the target plate; f represents the frequency of the probe; and e represents the length of the short side of the probe wafer.

6. The method of claim 1, wherein, The delay block is a water layer.

7. A plate phased array shear wave inspection system comprising a processor and a memory connected to each other, characterized in that, The processor is programmed or configured to perform the steps of the plate phased array transverse wave detection method according to any one of claims 1-6.

8. An electronic device, comprising: The memory and the processor are included, wherein The memory is used for storing programs. The processor is coupled with the memory and is used for executing the programs stored in the memory to realize the steps of the plate phased array transverse wave detection method according to any one of claims 1-6.

9. A computer-readable storage medium, characterized in that, The computer readable programs or instructions are stored, and the programs or instructions are executed by the processor to realize the steps of the plate phased array transverse wave detection method according to any one of claims 1-6.

Citation Information

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