Semiconductor device manufacturing method, heat-resistant member, and sealing material

Abstract

The present invention discloses one embodiment of a temporary fixing process in a semiconductor device manufacturing method. The process involves forming a detachment layer 11 on a glass base 10, and providing a heat-resistant member 12 to a rim 11a of the detachment layer 11. The heat-resistant member 12 is, for example, a heat-resistant polyimide tape. After the heat-resistant member 12 is provided, an adhesion layer 13 is formed on the detachment layer 11, and the adhesion layer 13 is heated to pre-bake the same. Then, the heat-resistant member 12 is removed, and a semiconductor member 20 is attached to the adhesion layer 13. The detachment layer 11 is irradiated with laser to separate the glass base 10 from the semiconductor member 20. With this method, since burn-in to the rim 11a of the detachment layer 11 is prevented, the glass base 10 can be easily separated. Since the glass base 10 can be separated in a clean state, the glass base 10 can be reused. The method is particularly useful when the base is an expensive glass wafer.

Description

Semiconductor device manufacturing method, heat-resistant member, and sealing material

[0001] The present disclosure relates to a method for manufacturing a semiconductor device, a heat-resistant member, and an encapsulant.

[0002] In recent years, with the rapid advancement in the functionality of electronic devices, such as AI and HPC, semiconductor packages have become larger and denser. These package structures go beyond surface mounting to include inorganic (silicon) or organic interposer (Bridge die / RDL) technology, 2.xD mounting using these, and 3D mounting (HBM / Chiplet) technology utilizing TSV. For example, Resonac Inc., based at its Packaging Solutions Center, is developing next-generation semiconductor packaging process technology from the perspective of its customers (semiconductor manufacturers), combining mounting processes and materials.

[0003] As a technique in the field of semiconductor packaging, Non-Patent Document 1 discloses an example of a process for temporarily fixing a semiconductor chip on a wafer.

[0004] Takayuki Ohba, Yuji Nakamura, "Current Status and Future Prospects of 3D Integration Technology," Applied Physics, 2020, Vol. 89, No. 2, pp. 75-81

[0005] In processes such as 2.5D packaging, temporary fixing of semiconductor chips on glass wafers has been considered. In this process, a release layer and an adhesive layer are sequentially stacked on a glass wafer and heated, and then a semiconductor chip is mounted on the adhesive layer. After the required processing is completed, a laser is irradiated onto the release layer to peel and separate the glass wafer from components such as semiconductor chips. However, when the release layer and adhesive layer are heated, their edges may burn. If the edges burn, the glass wafer cannot be cleanly peeled from components such as semiconductor chips when irradiated with a laser, and this may result in, for example, cracks in the semiconductor chip or cracks in the semiconductor chip encapsulant.

[0006] An object of the present disclosure is to provide a method for manufacturing a semiconductor device that allows easy debonding of a temporary fixing base material, and a heat-resistant member and a sealing material that can be used in the method.

[0007] [1] One aspect of the present disclosure relates to a method for manufacturing a semiconductor device, which includes the steps of forming a release layer on a substrate, providing a heat-resistant region around the periphery of the release layer, forming an adhesive layer on the release layer, heating at least one of the release layer and the adhesive layer after providing the heat-resistant region, attaching a semiconductor member to the adhesive layer, and separating the substrate from the semiconductor member at the release layer.

[0008] In this semiconductor device manufacturing method, a heat-resistant region is provided around the periphery of the release layer, and then at least one of the release layer and the adhesive layer is heated. This heat-resistant region prevents burning of the release layer, the adhesive layer, or both when at least one of the release layer and the adhesive layer is heated. This facilitates debonding of the temporary fixing base material when manufacturing a semiconductor device.

[0009] [2] The method for manufacturing a semiconductor device according to [1] above preferably further includes a step of removing the heat-resistant region before attaching the semiconductor member. This makes it possible to prevent the heat-resistant region from remaining in the semiconductor device including the semiconductor member. Furthermore, if the heat-resistant region is removed after the semiconductor member is attached, cracks or scratches may occur in the structure of the semiconductor device. On the other hand, if such cracks or scratches are to be prevented from occurring, the removal process takes time, reducing manufacturing efficiency. Therefore, by performing the removal process before attaching the semiconductor member, product quality and manufacturing efficiency can be improved.

[0010] [3] In the method for manufacturing a semiconductor device according to the above [1] or [2], in the step of providing the heat-resistant region, it is preferable to provide the heat-resistant region by attaching a heat-resistant tape or a heat-resistant sheet to the periphery of the release layer. In this case, the heat-resistant region can be easily formed.

[0011] [4] In any of the semiconductor device manufacturing methods [1] to [3] above, the base material may have a circular wafer shape or a rectangular panel shape, and the heat-resistant region may have an annular shape or a rectangular frame shape.

[0012] [5] In the semiconductor device manufacturing method according to any one of [1] to [4] above, the thickness of the heat-resistant region is preferably thinner than the thickness of the adhesive layer. In this case, unevenness caused by the heat-resistant region can be eliminated or reduced at the periphery of the adhesive layer. This reduces the impact of the heat-resistant region on subsequent processes, such as the attachment of semiconductor components.

[0013] [6] In the method for manufacturing a semiconductor device according to any one of [1] to [5] above, the thickness of the heat-resistant region may be greater than the thickness of the release layer, thereby reliably preventing seizure between the release layer and the adhesive layer, particularly seizure of the release layer, which may occur at the periphery.

[0014] [7] In the method for manufacturing a semiconductor device according to any one of [1] to [6] above, the width of the heat-resistant region may be 2 cm or less. In this case, the influence of the heat-resistant region on other components can be reduced.

[0015] [8] The semiconductor device manufacturing method according to any one of [1] to [7] above may further include a step of reusing the substrate after separating the substrate from the semiconductor member. In this semiconductor device manufacturing method, the provision of a heat-resistant region prevents the baking of at least one of the release layer and the adhesive layer. This also prevents the release layer and at least one of the adhesive layer from adhering to the substrate, allowing the substrate to be easily reused and reducing environmental impact. Furthermore, when the substrate is a glass substrate such as a glass wafer, which is often expensive, such reuse can also reduce manufacturing costs.

[0016] [9] In the semiconductor device manufacturing method of [8] above, the recycling step may include the steps of forming a separate release layer on the used substrate, providing a separate heat-resistant region around the periphery of the separate release layer, forming a separate adhesive layer on the separate release layer, heating at least one of the separate release layer and the separate adhesive layer after forming the separate heat-resistant region, attaching a separate semiconductor member to the separate adhesive layer, and separating the used substrate from the separate semiconductor member at the separate release layer. It is preferable to repeat this recycling step five or more times. This further reduces environmental impact and manufacturing costs.

[0017]

[10] In the method for manufacturing a semiconductor device according to any one of the above [1] to [9], in the step of forming the adhesive layer, the adhesive layer may be formed so that the adhesive covers at least a part of the heat-resistant region, or so that the adhesive does not reach the heat-resistant region. This can reliably prevent burning at the periphery in the heat-resistant region.

[0018]

[11] In the method for manufacturing a semiconductor device according to any one of the above [1] to

[10] , the semiconductor member may be provided with an encapsulant layer, and the encapsulant layer may be bonded to at least one of the adhesive layer and the release layer. This makes it possible to provide a semiconductor device protected by the encapsulant.

[0019]

[12] Another aspect of the present disclosure relates to a heat-resistant member used in any one of the methods for manufacturing a semiconductor device according to [1] to

[11] above.

[0020]

[13] The heat-resistant member of

[12] above preferably has a circular or rectangular frame shape. In this case, in the above-mentioned manufacturing method, the heat-resistant region can be easily formed around the periphery of the release layer. In addition, the placement accuracy of the heat-resistant region can be easily improved.

[0021]

[14] In the heat-resistant member of

[12] or

[13] above, the thickness of the heat-resistant member is 30 μm or more and 100 μm or less, the width of the heat-resistant member is 2 cm or less, and the heat-resistant member may contain polyimide. In this case, in the above-mentioned manufacturing method, the heat-resistant region can be easily formed around the periphery of the release layer. In addition, it is easy to improve the installation accuracy of the heat-resistant region.

[0022]

[15] In yet another aspect, the present disclosure relates to an encapsulant for use in the method for manufacturing a semiconductor device according to

[11] above.

[0023]

[16] The sealing material according to

[15] above has a bonding strength of 10 N / mm when bonded to an adhesive layer or a release layer. ２ In this case, displacement of the sealing material can be prevented in the method for manufacturing the semiconductor device.

[0024] According to the present disclosure, in a method for manufacturing a semiconductor device, debonding of a temporary fixing base material can be easily performed.

[0025] FIGS. 1A to 1D are cross-sectional views illustrating a method for manufacturing a semiconductor device according to an embodiment of the present invention. FIGS. 2A and 2B are plan views illustrating the steps of a method for manufacturing a semiconductor device shown in FIGS. 1C and 1D. FIGS. 3A to 3D are cross-sectional views illustrating a method for manufacturing a semiconductor device according to an embodiment of the present invention, illustrating steps performed after the step shown in FIG. 1D. FIGS. 4A to 4D are cross-sectional views illustrating a method for manufacturing a semiconductor device according to an embodiment of the present invention, illustrating steps performed after the step shown in FIG. 3D. FIGS. 5A and 5B are plan views illustrating a method for manufacturing a semiconductor device according to a modified example of the present invention.

[0026] Hereinafter, an embodiment of the present invention will be described in detail with reference to the drawings. In the following description, the same or equivalent parts will be denoted by the same reference numerals, and duplicate explanations will be omitted. Furthermore, unless otherwise specified, positional relationships such as up, down, left, and right will be based on the positional relationships shown in the drawings. Furthermore, the dimensional ratios of the drawings are not limited to those shown in the drawings.

[0027] In this specification, the term "layer" includes not only a structure having a shape formed over the entire surface when observed in a plan view, but also a structure having a shape formed on a portion thereof. In this specification, the term "process" includes not only an independent process, but also a process that cannot be clearly distinguished from other processes as long as the intended effect of the process is achieved.

[0028] In this specification, numerical ranges indicated using "to" indicate ranges that include the numerical values ​​before and after "to" as the minimum and maximum values, respectively. In numerical ranges described in stages in this specification, the upper or lower limit of a numerical range in one stage may be replaced with the upper or lower limit of a numerical range in another stage. In numerical ranges described in this specification, the upper or lower limit of the numerical range may be replaced with a value shown in the examples.

[0029] A method for manufacturing a semiconductor device according to one embodiment of the present invention will be described with reference to FIGS. 1 to 4. FIGS. 1, 3, and 4 are cross-sectional views sequentially illustrating the method for manufacturing a semiconductor device. FIG. 2 is a plan view illustrating the steps (c) and (d) of FIG. 1. In this method for manufacturing a semiconductor device, a substrate 10 is first prepared, as shown in FIG. 1A. The substrate 10 is, for example, a glass wafer having a circular planar shape (see also FIG. 2). The substrate 10 may be another substrate, for example, a SUS substrate.

[0030] Next, as shown in FIG. 1B, a release layer 11 is formed on the substrate 10. The release layer 11 is, for example, a thermosetting adhesive layer and is configured to be peeled off together with the substrate 10 by light, heat, or the like in a process described below. Examples of materials that can be used to form the release layer 11 include TZNR-CTRL9 (trade name, Tokyo Ohka Kogyo Co., Ltd.). Other materials that perform the function of the release layer 11 may also be used. To form the release layer 11, for example, a thermosetting adhesive is applied to the substrate 10 and spread by spin coating to form a film. The adhesive applied to the substrate 10 is then heated and cured in an oven or the like. The release layer 11 may also be formed by other methods. The thickness of the release layer 11 is, for example, 0.1 μm to 10 μm, and is, for example, 1 μm. The release layer 11 may be formed up to the periphery of the substrate 10, or may be slightly smaller than the periphery of the substrate 10.

[0031] Next, after the release layer 11 is formed, a heat-resistant member 12 is attached to the peripheral edge 11a of the release layer 11, as shown in (c) of FIG. 1 and (a) of FIG. 2. By attaching the heat-resistant member 12, a heat-resistant region is formed on the peripheral edge 11a of the release layer 11. The peripheral edge 11a and the heat-resistant member 12 have, for example, a circular ring shape when viewed from above. The heat-resistant member 12 may be, for example, a heat-resistant polyimide tape or a silicone rubber sheet. The heat-resistant member 12 may be a tape-shaped member (heat-resistant tape) or a heat-resistant sheet having a circular ring shape, as shown in FIG. 2. The thickness of the heat-resistant member 12 is, for example, 30 μm to 100 μm, and is, for example, 55 μm. The heat-resistant member 12 is thicker than the release layer 11. The width of the heat-resistant member 12 may be 2 cm or less, 1 cm or less, 0.3 cm or more, or 0.5 cm or more. The heat-resistant region provided on the peripheral edge 11a of the release layer 11 may be provided by other methods (for example, by applying a heat-resistant material to the peripheral edge 11a and hardening it).

[0032] Next, after the heat-resistant region is formed, an adhesive layer 13 is formed on the release layer 11, as shown in FIG. 1(d) and FIG. 2(b). The adhesive layer 13 can be formed, for example, from a thermoplastic adhesive. Examples of materials that can be used for the adhesive layer 13 include TZNR-A4017 (trade name, Tokyo Ohka Kogyo Co., Ltd.). Other materials that perform the functions of the adhesive layer 13 may also be used. To form the adhesive layer 13, for example, a thermoplastic adhesive is applied to the release layer 11 and spread by spin coating to form a film. The substrate 10 containing the adhesive applied to the release layer 11 is then placed on a hot plate and heated for pre-baking. The heating temperature may be, for example, between 80°C and 220°C, or may be increased in stages. In this semiconductor device manufacturing method, the adhesive layer 13 is formed by heating after the heat-resistant member 12 is provided. During this process, the release layer 11 is also heated. When forming the adhesive layer 13, the thermoplastic adhesive may be applied onto the heat-resistant member 12 located on the peripheral edge 11a of the release layer 11, or may not be applied onto the heat-resistant member 12.

[0033] 3A, after the adhesive layer 13 is formed, the heat-resistant member 12 is removed before mounting the semiconductor chip. If a part of the adhesive layer 13 is present on the heat-resistant member 12, it may be removed together. When the heat-resistant member 12 is removed, the peripheral edge 11a of the release layer 11 may be exposed.

[0034] Next, after the heat-resistant member 12 is removed, a semiconductor member 20 is prepared as shown in FIG. 3B. The semiconductor member 20 includes a semiconductor wafer 21, one or more semiconductor chips 22, and an encapsulant layer 23. In the example shown in FIG. 3B, the semiconductor member 20 includes, for example, two semiconductor chips 22, which are encapsulated by an encapsulant. This forms the encapsulant layer 23. The encapsulant contains a thermosetting resin composition, for example, an epoxy resin and a curing agent. The encapsulant constituting the encapsulant layer 23 may further contain an inorganic filler, such as a silica filler. The average particle diameter of the inorganic filler contained in the encapsulant may be, for example, 50 μm or less, 25 μm or less, 10 μm or less, or 0.01 μm or less. The encapsulant used to form the encapsulant layer 23 preferably contains an inorganic filler with a large particle diameter to suppress warping during or after the manufacture of the semiconductor device.

[0035] Next, the semiconductor member 20 having the above configuration is attached to the base material 10 via the adhesive layer 13, as shown in Figures 3(b) and (c). During this attachment, at least one of the substrate 10 and the semiconductor member 20 is heated and pressurized to perform bonding. In the semiconductor member 20, the semiconductor chip 22 is attached to the semiconductor wafer 21 so that the connection terminals face the semiconductor wafer 21 side. The sealant layer 23 is bonded to the adhesive layer 13, and may also be bonded at its periphery to the periphery 11a of the release layer 11. In this case, the bonding strength between the sealant layer 23 and the release layer 11 and adhesive layer 13 is 10 N / mm ２ 3B and 3C, the region (periphery 11a) from which the heat-resistant member 12 has been removed is omitted.

[0036] Next, after the semiconductor member 20 is attached, an insulating layer 24 is formed on the semiconductor wafer 21, as shown in FIG. 3(d). The insulating layer 24 may be, for example, a redistribution line (RDL). In this case, one end of the redistribution line is electrically connected to a terminal of the semiconductor wafer 21. Such an insulating layer 24 can be formed by a known method.

[0037] 4A, after the insulating layer 24 is formed, an electrode pad 25 and a bump 26 are formed to be electrically connected to the other end of the rewiring layer of the insulating layer 24. The electrode pad 25 and the bump 26 can be formed by a known method.

[0038] Next, as shown in (b) and (c) of Figure 4, the release layer 11 is irradiated with a laser to peel and separate the substrate 10 from the semiconductor member 20. When the substrate 10 is a glass substrate, the release layer 11 can be easily irradiated with a laser. During this separation, the release layer 11, the adhesive layer 13, or both are not baked at the peripheral edge 11a of the release layer 11, so the substrate 10 can be easily removed. The separated substrate 10 may be reused when performing the above-mentioned steps (the steps shown in (a) of Figure 1 to (a) of Figure 4). When the substrate 10 is a glass substrate, such reuse may be performed five or more times, and preferably ten or more times.

[0039] Next, after the substrate 10 is separated, the adhesive layer 13 and the like on the back surface of the structure S including the semiconductor member 20 and the plurality of electrode pads 25 and bumps 26 are removed by polishing or chemical rinsing. This results in a semiconductor device 20A shown in FIG. 4(d). The semiconductor device 20A includes a semiconductor wafer 21, a semiconductor chip 22, a sealing material layer 23, an insulating layer 24, a plurality of electrode pads 25, and a plurality of bumps 26. As the chemical rinsing agent, for example, TZNR-HC Thinner (trade name, Tokyo Ohka Kogyo Co., Ltd.) can be used.

[0040] As described above, in the method for manufacturing a semiconductor device according to this embodiment, the heat-resistant member 12 (heat-resistant region) is provided on the peripheral edge 11a of the release layer 11, and then at least one of the release layer 11 and the adhesive layer 13 is heated. The heat-resistant member 12 prevents burning of the release layer 11, the adhesive layer 13, or both when at least one of the release layer 11 and the adhesive layer 13 is heated. This facilitates debonding (separation) of the base material 10, which serves as a temporary fixing base material, during peeling at the release layer 11.

[0041] In the semiconductor device manufacturing method according to this embodiment, the heat-resistant member 12 (heat-resistant region) is removed before the semiconductor member 20 is attached. This makes it possible to prevent the heat-resistant member 12 (heat-resistant region) from remaining in the semiconductor device 20A that includes the semiconductor member 20. Furthermore, attempting to remove the heat-resistant member 12 after the semiconductor member 20 is attached can result in cracks or scratches in the structure of the semiconductor device 20A. On the other hand, preventing cracks or scratches from occurring requires a long removal process, reducing manufacturing efficiency. Therefore, by performing the removal process before attaching the semiconductor member 20, product quality and manufacturing efficiency can be improved.

[0042] In the method for manufacturing a semiconductor device according to this embodiment, the heat-resistant region is provided by attaching the heat-resistant member 12 to the periphery 11a of the release layer 11. In this case, the heat-resistant region can be easily formed.

[0043] In the semiconductor device manufacturing method according to this embodiment, the thickness of the heat-resistant member 12 is thinner than the thickness of the adhesive layer 13. In this case, unevenness due to the heat-resistant region is not provided on the periphery of the adhesive layer 13, or the degree of such unevenness can be reduced. This reduces the influence of the heat-resistant region on subsequent processes such as the attachment of the semiconductor member 20.

[0044] In the method for manufacturing a semiconductor device according to this embodiment, the thickness of the heat-resistant member 12 is greater than the thickness of the release layer 11. In this case, it is possible to reliably prevent seizure between the release layer 11 and the adhesive layer 13 that may occur at the peripheral edge 11 a.

[0045] In the semiconductor device manufacturing method according to this embodiment, the width of the heat-resistant member 12 may be 2 cm or less. In this case, the influence of the heat-resistant region on other members can be reduced. On the other hand, the width of the heat-resistant member 12 may be 0.3 cm or more. In this case, seizure between the peeling layer 11 and the adhesive layer 13, which may occur at the peripheral edge 11 a, can be reliably prevented.

[0046] In the semiconductor device manufacturing method according to this embodiment, the substrate 10 may be reused after being separated from the semiconductor member 20. In this semiconductor device manufacturing method, the heat-resistant member 12 is provided to prevent burning of the release layer 11 and the adhesive layer 13. This also prevents the release layer 11, the adhesive layer 13, or both from adhering to the substrate 10, allowing the substrate 10 to be reused, thereby reducing the environmental impact. Note that when the substrate 10 is a glass substrate such as a glass wafer, which is expensive, such reuse can also reduce manufacturing costs.

[0047] In the semiconductor device manufacturing method according to this embodiment, the above-described recycling process includes the steps of forming a separate release layer 11 on the used substrate 10, providing a separate heat-resistant member 12 on the peripheral edge 11a of the separate release layer 11, forming a separate adhesive layer 13 on the separate release layer 11, heating at least one of the separate release layer 11 and the separate adhesive layer 13 after forming the separate heat-resistant member 12, attaching a separate semiconductor member 20 to the separate adhesive layer 13, and separating the used substrate 10 from the separate semiconductor member 20 at the separate release layer 11. It is preferable to repeat this recycling process five or more times, or ten or more times. This further reduces environmental impact and manufacturing costs.

[0048] In the method for manufacturing a semiconductor device according to this embodiment, when forming the adhesive layer, the adhesive layer 13 may be formed so that the adhesive covers at least a part of the heat-resistant member 12, or so that the adhesive does not come into contact with the heat-resistant member 12. This can reliably prevent burning at the periphery in the heat-resistant region.

[0049] Although the embodiments of the present disclosure have been described above, the present invention is not limited to the above-described embodiments and may be modified as appropriate without departing from the spirit of the present disclosure. For example, in the above-described embodiments, a circular glass wafer was used as the substrate 10, but this is not limiting. For example, as shown in FIG. 5A, a rectangular panel-shaped substrate 30 may be used. Then, similar to the manufacturing method of the above-described embodiment, a release layer 11 and a heat-resistant member 32 may be sequentially formed on the rectangular substrate 30. In this case, the heat-resistant member 32 has a rectangular frame shape corresponding to the shape of the substrate 30. The heat-resistant member 32 corresponds to the heat-resistant member 12 described above and may be, for example, a heat-resistant polyimide tape, and may have the same thickness and width as the heat-resistant member 12. In this modified example, as shown in FIG. 5B, an adhesive layer 13 is then formed on the rectangular release layer 11 and the rectangular frame-shaped heat-resistant member 32. This adhesive layer 13 also has a rectangular shape. Subsequent processes are similar to those described above. A semiconductor device can be similarly fabricated using such a rectangular panel shape.

[0050] 10, 30... base material, 11... release layer, 11a... periphery, 12, 32... heat-resistant member (heat-resistant region), 13... adhesive layer, 20... semiconductor member, 20A... semiconductor device, 23... sealing material layer.

Claims

1. A method for manufacturing a semiconductor device, comprising the steps of: forming a release layer on a substrate; providing a heat-resistant region around the periphery of the release layer; forming an adhesive layer on the release layer; heating at least one of the release layer and the adhesive layer after providing the heat-resistant region; attaching a semiconductor member to the adhesive layer; and separating the substrate from the semiconductor member at the release layer.

2. The method for manufacturing a semiconductor device according to claim 1, further comprising the step of removing the heat-resistant region before attaching the semiconductor member.

3. The method for manufacturing a semiconductor device according to claim 1 or 2, wherein in the step of providing the heat-resistant region, the heat-resistant region is provided by attaching a heat-resistant tape or a heat-resistant sheet to the periphery of the release layer.

4. The method for manufacturing a semiconductor device according to any one of claims 1 to 3, wherein the base material has a circular wafer shape or a rectangular panel shape, and the heat-resistant area has an annular shape or a rectangular frame shape.

5. The method for manufacturing a semiconductor device according to any one of claims 1 to 4, wherein the thickness of the heat-resistant region is thinner than the thickness of the adhesive layer.

6. The method for manufacturing a semiconductor device according to any one of claims 1 to 5, wherein the thickness of the heat-resistant region is greater than the thickness of the release layer.

7. The method for manufacturing a semiconductor device according to any one of claims 1 to 6, wherein the width of the heat-resistant region is 2 cm or less.

8. The method for manufacturing a semiconductor device according to any one of claims 1 to 7, further comprising a step of reusing the base material after separating the base material from the semiconductor member.

9. The method for manufacturing a semiconductor device according to claim 8, wherein the recycling step comprises the steps of: forming another release layer on the used substrate; providing another heat-resistant region around the periphery of the another release layer; forming another adhesive layer on the another release layer; heating at least one of the another release layer and the another adhesive layer after forming the another heat-resistant region; attaching another semiconductor member to the another adhesive layer; and separating the used substrate from the another semiconductor member at the another release layer; and wherein the recycling step is repeated five or more times.

10. A method for manufacturing a semiconductor device according to any one of claims 1 to 9, wherein in the step of forming the adhesive layer, the adhesive layer is formed so that the adhesive covers at least a portion of the heat-resistant region, or so that the adhesive does not come into contact with the heat-resistant region.

11. The method for manufacturing a semiconductor device according to any one of claims 1 to 10, wherein the semiconductor member is provided with a sealing material layer, and the sealing material layer is bonded to at least one of the adhesive layer and the release layer.

12. A heat-resistant member used in the method for manufacturing a semiconductor device according to any one of claims 1 to 11.

13. The heat-resistant member according to claim 12, having a circular or rectangular frame shape.

14. The heat-resistant member according to claim 12 or 13, wherein the thickness of the heat-resistant member is 30 μm to 100 μm, the width of the heat-resistant member is 2 cm or less, and the heat-resistant member contains polyimide.

15. A sealing material used in the method for manufacturing a semiconductor device according to claim 11.

16. The bonding strength of the sealing material when bonded to the adhesive layer or the release layer is 10 N / mm ２ The sealing material according to claim 15 , wherein the above is true.

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