Semiconductor manufacturing device
The semiconductor manufacturing apparatus addresses air entrapment issues by using a vacuum chamber to apply films to semiconductor wafers, ensuring high-quality lamination without wrinkles or bubbles.
Patent Information
- Application Number
- PCT/JP2025/023842
- Authority / Receiving Office
- WO · WO
- Patent Type
- Applications
- Current Assignee / Owner
- Priority Date
- 2024-07-25
- Filing Date
- 2025-07-02
- Publication Date
- 2026-01-29
AI Technical Summary
Conventional film bonding devices apply films to semiconductor wafers under atmospheric pressure, risking air entrapment between the wafer and the film, which can lead to issues like wrinkling and bubble formation.
A semiconductor manufacturing apparatus with a vacuum chamber that accommodates the wafer and a pressing member, applying the film under vacuum conditions to prevent air entrapment and ensure smooth lamination.
Prevents air entrapment, reduces wrinkling, and ensures high-quality film attachment to semiconductor wafers by applying the film under vacuum, enhancing yield and quality.
Smart Images

Figure JP2025023842_29012026_PF_FP_ABST
Abstract
Description
Semiconductor manufacturing equipment
[0001] The present disclosure relates to semiconductor manufacturing equipment.
[0002] 2. Description of the Related Art Conventionally, a film bonding device has been known that includes a table on which a semiconductor wafer is placed and a pressing member that presses a film applied to the semiconductor wafer placed on the table (see Patent Document 1).
[0003] Patent No. 4376250
[0004] The above-mentioned apparatus is configured to apply the film to the semiconductor wafer under atmospheric pressure, and therefore there is a risk that air may be trapped between the semiconductor wafer and the film.
[0005] Therefore, it is desirable to provide a semiconductor manufacturing apparatus that can prevent air from being trapped between the semiconductor wafer and the film.
[0006] A semiconductor manufacturing apparatus according to an embodiment of the present disclosure includes a table on which a semiconductor wafer is placed, a pressing member that presses a film that is attached to the semiconductor wafer placed on the table, and a vacuum chamber that accommodates the semiconductor wafer placed on the table and the pressing member.
[0007] The above-described semiconductor manufacturing apparatus can prevent air from being trapped between the semiconductor wafer and the film.
[0008] 1 is a perspective view of a film laminating device according to an embodiment of the present disclosure; FIG. 2 is a right side view of the film laminating device shown in FIG. 1; FIG. 3 is a diagram of a conduit, a vacuum port, a table, a vacuum chamber, a vacuum valve, and a vacuum pump that constitute the film laminating device shown in FIG. 1; FIG. 4 is a perspective view of a vacuum chamber that constitutes the film laminating device shown in FIG. 1; FIG. 5 is a perspective view of a vacuum chamber that constitutes the film laminating device shown in FIG. 1; FIG. 6 is a cross-sectional view of a vacuum chamber and members housed in the vacuum chamber that constitute the film laminating device shown in FIG. 1; FIG. 7 is a flowchart showing the procedure of operations performed by the film laminating device shown in FIG. 1; and FIG. 8 is a rear view of members that constitute the film laminating device shown in FIG. 1.
[0009] A film bonding device 100, which is an example of a semiconductor manufacturing device according to an embodiment of the present disclosure, will be described below with reference to the drawings. The film bonding device 100 is also called a laminator. FIG. 1 is a diagram showing an example configuration of the film bonding device 100. Specifically, the upper diagram of FIG. 1 is a perspective view of the film bonding device 100, and the lower diagram of FIG. 1 is a perspective view of the film bonding device 100 with an upper cover member CBU removed.
[0010] In FIG. 1 , X1 represents one direction of the X axis constituting the three-dimensional orthogonal coordinate system, and X2 represents the other direction of the X axis. Furthermore, Y1 represents one direction of the Y axis constituting the three-dimensional orthogonal coordinate system, and Y2 represents the other direction of the Y axis. Similarly, Z1 represents one direction of the Z axis constituting the three-dimensional orthogonal coordinate system, and Z2 represents the other direction of the Z axis. In FIG. 1 , the X1 side of the film sticking device 100 corresponds to the front side (front face side) of the film sticking device 100, and the X2 side of the film sticking device 100 corresponds to the rear side (rear face side) of the film sticking device 100. Furthermore, the Y1 side of the film sticking device 100 corresponds to the left side of the film sticking device 100, and the Y2 side of the film sticking device 100 corresponds to the right side of the film sticking device 100. Furthermore, the Z1 side of the film sticking device 100 corresponds to the upper side of the film sticking device 100, and the Z2 side of the film sticking device 100 corresponds to the lower side of the film sticking device 100. The same applies to other members in other figures.
[0011] The film bonding apparatus 100 is an apparatus used to bond a film to a semiconductor wafer. Note that "bonding a film to a semiconductor wafer" can also be expressed as "laminating a semiconductor wafer." In the illustrated example, the film bonding apparatus 100 includes a main body MB covered by a cover member CB composed of an upper cover member CBU and a lower cover member CBD, as shown in the upper diagram of FIG. 1 , a load-side load port LD, an unload-side load port UL, and a vacuum pump VP located outside the cover member CB. As shown in the lower diagram of FIG. 1 , the main body MB includes an aligner AL, a film cutting device CU, a robot RB, a table TB, and a vacuum chamber VC.
[0012] Fig. 2 is a right side view of the film bonding apparatus 100. Specifically, the upper view of Fig. 2 is a right side view of the film bonding apparatus 100 with the upper cover member CBU removed, the center view of Fig. 2 is a right side view of the film bonding apparatus 100 with the lower cover member CBD further removed, and the lower view of Fig. 2 is a right side view of the film bonding apparatus 100 with the aligner AL, the load-side load port LD, the robot RB, and the unload-side load port UL further removed.
[0013] Figure 3 is a diagram of the conduit CD, vacuum port PT, table TB, vacuum chamber VC, vacuum valve VL, and vacuum pump VP. Specifically, the left side of Figure 3 is a right side view of the conduit CD, vacuum port PT, table TB, vacuum chamber VC, vacuum valve VL, and vacuum pump VP, and corresponds to the bottom view of Figure 2. The right side of Figure 3 is a front view of the conduit CD, vacuum port PT, table TB, vacuum chamber VC, vacuum valve VL, and vacuum pump VP.
[0014] The load-side load port LD is a device for taking in semiconductor wafers without a film (tape) attached thereto into the film attachment apparatus 100. In the illustrated example, the semiconductor wafers before a film is attached thereto are housed in a front-opening unified pod (FOUP) or magazine set in the load-side load port LD (see FIG. 1), and are removed one by one.
[0015] The unload-side load port UL is a device for removing semiconductor wafers to which a film has been applied by the film application device 100 from the film application device 100. In the illustrated example, the semiconductor wafers to which the film has been applied are stored one by one in FOUPs set in the unload-side load port UL (see FIG. 1).
[0016] The vacuum pump VP is a pump for creating a vacuum in the space within the vacuum chamber VC. In the illustrated example, the vacuum pump VP is configured to be able to create a pressure within the vacuum chamber VC of 1 to 10 Pa. Specifically, the vacuum pump VP is connected to three vacuum ports PT provided in the vacuum chamber VC by conduits CD. The conduit CD includes a large-diameter pipe CDM connected to the vacuum pump VP and three small-diameter pipes (a first small-diameter pipe CD1, a second small-diameter pipe CD2, and a third small-diameter pipe CD3) that branch off from the large-diameter pipe CDM and connect to the vacuum ports PT. Furthermore, vacuum valves VL (a first vacuum valve VL1, a second vacuum valve VL2, and a third vacuum valve VL3) are attached to the three small-diameter pipes (the first small-diameter pipe CD1, the second small-diameter pipe CD2, and the third small-diameter pipe CD3), respectively. Furthermore, one (first vacuum valve VL1) of the three vacuum valves VL (first vacuum valve VL1, second vacuum valve VL2, and third vacuum valve VL3) is a slow vent valve.
[0017] The robot RB is an example of a transfer device for transferring a semiconductor wafer from one position to another position within the film bonding apparatus 100. In the illustrated example, the robot RB is a multi-axis transfer robot, and is configured to be able to transfer semiconductor wafers between the aligner AL, the load-side load port LD, the table TB, and the unload-side load port UL.
[0018] The aligner AL is a device for detecting the center position and notch position of a semiconductor wafer. In the illustrated example, the aligner AL is configured to align the center of the semiconductor wafer with the center of the table TB on which the semiconductor wafer is placed. In other words, the aligner AL can center the semiconductor wafer.
[0019] The table TB is a device on which a semiconductor wafer is placed. In the illustrated example, the table TB is configured to be slidable in the X-axis direction and movable up and down in the Z-axis direction so that a film can be attached to the semiconductor wafer placed on the table TB within the vacuum chamber VC.
[0020] The film cutting unit CU is a device for cutting a film attached to a semiconductor wafer. In the illustrated example, the film cutting unit CU is configured to cut the film attached to the semiconductor wafer in the vacuum chamber VC with a blade BD (see the upper diagram in Figure 5). Note that the film cutting unit CU may also be a device capable of emitting a laser to cut the film attached to the semiconductor wafer in the vacuum chamber VC. The laser may be, for example, a UV laser or a CO2 laser.
[0021] The vacuum chamber VC is a structure that encloses a space that is evacuated by the vacuum pump VP. In the illustrated example, the vacuum chamber VC is a structure that encloses a space that is a combination of three approximately rectangular parallelepiped spaces. The combination of the three approximately rectangular parallelepiped spaces is a combination of a first approximately rectangular parallelepiped space extending in the Y-axis direction, a second approximately rectangular parallelepiped space that extends downward from the left end (the end on the Y1 side) of the first space, and a third approximately rectangular parallelepiped space that extends downward from the right end (the end on the Y2 side) of the first space. Note that the vacuum chamber VC may be a structure that encloses a space of any shape, such as a single approximately rectangular parallelepiped, a substantially cylindrical, a substantially polygonal prism, or a substantially spherical shape, or may be a structure that encloses a space that is an arbitrary combination of two or more approximately rectangular parallelepiped, a substantially cylindrical, a substantially polygonal prism, or a substantially spherical shape.
[0022] Figures 4 and 5 are perspective views of the vacuum chamber VC, and Figure 6 is a cross-sectional view of the vacuum chamber VC. Specifically, the upper view of Figure 4 is a perspective view of the vacuum chamber VC showing the front, top, and right side of the vacuum chamber VC, and the lower view of Figure 4 is a perspective view of the vacuum chamber VC showing the back, top, and left side of the vacuum chamber VC. The upper view of Figure 5 is a perspective view of the vacuum chamber VC showing the front, top, and right side of the vacuum chamber VC, and the lower view of Figure 5 is a perspective view of the vacuum chamber VC showing the back, bottom, and right side of the vacuum chamber VC. The upper view of Figure 5 includes a perspective view of the film cutting device CU to show the positional relationship between the vacuum chamber VC and the film cutting device CU. The upper view of Figure 6 shows a cross-section of the vacuum chamber VC and the components housed therein, taken along an imaginary plane parallel to the YZ plane and including the cutting line L1 in the lower view of Figure 4. 6 is an enlarged view of an area R1 surrounded by a dashed line, and the lower right view of Fig. 6 is an enlarged view of an area R2 surrounded by a dashed line. For ease of understanding, Fig. 6 shows the table TB and the lower cover member BC, but omits the table lifting mechanism EM, which is a mechanism for raising and lowering the table TB.
[0023] Specifically, the vacuum chamber VC is formed by welding together a plurality of plate members 10. In the illustrated example, the plate members 10 are made of aluminum and include a rear plate member 10B, a lower central plate member 10DC, a lower left plate member 10DL, a lower right plate member 10DR, a front plate member 10F, a left inner plate member 10IL, a right inner plate member 10IR, a left plate member 10L, a right plate member 10R, and an upper plate member 10U.
[0024] As shown in the lower diagram of FIG. 5 , the central lower plate member 10DC is provided with a lower opening LH as a first penetration portion for allowing the table TB to be inserted and removed. In the illustrated example, the lower opening LH is a substantially rectangular opening in bottom view and is configured to have an opening area larger than the surface area of the table TB. The lower opening LH is configured to be sealed by a lower cover member BC as shown in the upper diagram of FIG. 6 . Specifically, as shown in the lower right diagram of FIG. 6 , a lower groove GVD is formed on the upper surface of the lower cover member BC and a lower O-ring RGD is fitted into the lower opening LH. The lower groove GVD has a trapezoidal cross section with a bottom width wider than the opening width to prevent the lower O-ring RGD from falling out.
[0025] The lower right side plate member 10DR is provided with three vacuum ports PT as shown in the lower diagram of Figure 5. Each of the three vacuum ports PT is connected to a conduit CD which leads to a vacuum pump VP.
[0026] Door elements 11 are attached to parts of the plate member 10. In the illustrated example, the door elements 11 are made of aluminum and include a rear door element 11B, a left door element 11L, and a right door element 11R. Specifically, the rear door element 11B is attached to the rear plate member 10B, the left door element 11L is attached to the left plate member 10L, and the right door element 11R is attached to the right plate member 10R. The rear door element 11B includes a center rear door element 11BC, a left rear door element 11BL, and a right rear door element 11BR.
[0027] The door elements 11 are configured to be opened and closed by lever lock mechanisms 12, and a sealing member such as an O-ring is disposed between the plate member 10 and the door elements 11. Specifically, the rear door element 11B is configured to be opened and closed by a rear lever lock mechanism 12B, the left door element 11L is configured to be opened and closed by a left lever lock mechanism 12L, and the right door element 11R is configured to be opened and closed by a right lever lock mechanism 12R. More specifically, the central rear door element 11BC is configured to be opened and closed by a pair of central rear lever lock mechanisms 12BC, the left rear door element 11BL is configured to be opened and closed by a left rear lever lock mechanism 12BL, and the right rear door element 11BR is configured to be opened and closed by a right rear lever lock mechanism 12BR.
[0028] A reinforcing member 13 is attached to a portion of the plate member 10. In the illustrated example, the reinforcing member 13 is made of aluminum and includes a front reinforcing member 13F and an upper reinforcing member 13U. Specifically, the front reinforcing member 13F is attached to the front plate member 10F, and the upper reinforcing member 13U is attached to the upper plate member 10U. The front reinforcing member 13F includes a left front reinforcing member 13FL and a right front reinforcing member 13FR. As shown in the upper view of FIG. 5 , the upper reinforcing member 13U is provided with an upper opening UH as a second penetration portion that enables the film cutting device CU to cut the film attached to the semiconductor wafer. In the illustrated example, the upper opening UH is a substantially rectangular opening in top view and is configured to have an opening area larger than the cross-sectional area of the film cutting device CU. As shown in the upper view of FIG. 6 , the upper opening UH is configured to be sealed by an upper cover member TC. 6, an upper groove GVU is formed on the underside of the upper cover member TC, into which an upper O-ring RGU is fitted, the upper O-ring RGU being disposed so as to surround the upper opening UH. The upper groove GVU is configured to have a trapezoidal cross section whose bottom width is wider than the width of the opening, in order to prevent the upper O-ring RGU from falling out.
[0029] Furthermore, light-transmitting members 14 (see the upper diagram in FIG. 4 ) are fitted into parts of the door element 11 and the reinforcing element 13. In the illustrated example, the light-transmitting members 14 are made of resin (typically transparent resin) and include a rear light-transmitting member 14B, a front light-transmitting member 14F, and an upper light-transmitting member 14U. Specifically, the rear light-transmitting member 14B is fitted into the rear door element 11B, the front light-transmitting member 14F is fitted into the front reinforcing element 13F, and the upper light-transmitting member 14U is fitted into the upper reinforcing element 13U. More specifically, a left rear translucent member 14BL is fitted into the left rear door member 11BL, a right rear translucent member 14BR is fitted into the right rear door member 11BR, a left front translucent member 14FL is fitted into the left front reinforcing member 13FL, and a central front translucent member 14FC and a right front translucent member 14FR are fitted into the right front reinforcing member 13FR.
[0030] Additionally, sensors 15, such as optical sensors, are attached to the outside of the light-transmitting members 14. In the illustrated example, the sensors 15 are infrared sensors, including a rear sensor 15B attached to the outside of the rear light-transmitting member 14B. Specifically, a first left rear sensor 15BL1 and a second left rear sensor 15BL2 are attached to the outside of the left rear light-transmitting member 14BL, and a right rear sensor 15BR is attached to the outside of the right rear light-transmitting member 14BR. The sensors 15 located outside the vacuum chamber VC are not adversely affected by sudden changes in pressure within the vacuum chamber VC. Therefore, this configuration in which the sensors 15 are located outside the vacuum chamber VC can improve the durability of the film application device 100.
[0031] Furthermore, a vacuum connector 16 is provided on a part of the plate member 10. The vacuum connector 16 electrically connects the devices inside the vacuum chamber VC to the devices outside the vacuum chamber VC while hermetically sealing the inside and outside of the vacuum chamber VC. Specifically, a front vacuum connector 16F is provided on the front plate member 10F.
[0032] In the illustrated example, each of the components, such as the door member 11, the lever lock mechanism 12, the reinforcing member 13, the light-transmitting member 14, and the sensor 15, is attached to the plate member 10 using bolts, but the bolt holes are formed so as not to penetrate the plate member 10. This is to increase the airtightness of the vacuum chamber VC.
[0033] Next, the operation performed by the film bonding device 100 will be described with reference to Fig. 7. Fig. 7 is a flowchart showing the procedure of the operation performed by the film bonding device 100.
[0034] First, the film bonding apparatus 100 transfers a semiconductor wafer from the load-side load port LD to the aligner AL by the robot RB (step ST1). Specifically, the film bonding apparatus 100 operates the robot RB to grasp one of the semiconductor wafers placed on the load-side load port LD and transfers the semiconductor wafer onto the aligner AL as indicated by the arrow AR1 in FIG. 1 and the arrow AR1 in the upper diagram of FIG. 2.
[0035] Thereafter, the film bonding device 100 detects the center position and the notch position of the semiconductor wafer in the aligner AL (step ST2).
[0036] Thereafter, the film bonding device 100 transfers the semiconductor wafer from the aligner AL to the table TB by the robot RB (step ST3). Specifically, the film bonding device 100 operates the robot RB to grip the semiconductor wafer whose center position and notch position have been detected in the aligner AL, and transfers the semiconductor wafer onto the table TB with the center position and notch direction aligned, as indicated by the arrow AR2 in FIG. 1 and the arrow AR2 in the upper diagram of FIG. 2.
[0037] Thereafter, the film bonding device 100 sucks the semiconductor wafer (step ST4). Specifically, the film bonding device 100 uses a vacuum chuck provided on the table TB to suck the underside of the semiconductor wafer placed on the table TB.
[0038] Thereafter, the film bonding device 100 slides the table TB to below the lower opening LH of the vacuum chamber VC (step ST5). Specifically, the film bonding device 100 operates a linear actuator (not shown) to slide the table TB to the X2 side (rear side) as indicated by the arrow AR3 in the lower diagram of FIG. 2 and the arrow AR3 in the left diagram of FIG. 3.
[0039] Thereafter, the film bonding device 100 raises the table TB (lower lid member BC) to seal the lower opening LH of the vacuum chamber VC (step ST6). Specifically, the film bonding device 100 operates the table lifting mechanism EM to raise the table TB and the lower lid member BC as indicated by the arrow AR4 in the right diagram of FIG. 3. In the illustrated example, the film bonding device 100 raises the lower lid member BC to the position shown in the upper diagram of FIG. 6. In other words, the film bonding device 100 presses the lower lid member BC against the central lower plate member 10DC from below.
[0040] Thereafter, the film bonding device 100 slides the upper lid member TC to above the upper opening UH of the vacuum chamber VC (step ST7). Specifically, the film bonding device 100 operates a linear actuator (not shown) to slide the upper lid member TC to the Y2 side (right side) as indicated by the arrow AR5 in the right diagram of FIG.
[0041] Thereafter, the film bonding device 100 lowers the upper cover member TC to seal the upper opening UH of the vacuum chamber VC (step ST8). Specifically, the film bonding device 100 operates an upper cover member lifting mechanism (not shown) to lower the upper cover member TC. In the illustrated example, the film bonding device 100 lowers the upper cover member TC to the position shown in the upper diagram of FIG. 6. In other words, the film bonding device 100 presses the upper cover member TC against the upper reinforcing member 13U from above.
[0042] The film sticking device 100 may press the upper cover member TC against the upper reinforcing member 13U, and then press the lower cover member BC against the central lower plate member 10DC.
[0043] Thereafter, the film bonding device 100 performs evacuation using the vacuum pump VP (step ST9). Specifically, the film bonding device 100 operates the vacuum pump VP to exhaust the air in the vacuum chamber VC to the outside through the vacuum port PT and the conduit CD until the pressure in the vacuum chamber VC reaches 1 to 10 Pa.
[0044] Thereafter, the film bonding device 100 performs bonding of the film (step ST10). Specifically, the film bonding device 100 operates the film bonding mechanism FPM housed in the vacuum chamber VC to bond the film to the semiconductor wafer in a substantially vacuum state.
[0045] The film bonding mechanism FPM housed in the vacuum chamber VC will now be described with reference to FIG. 8 . FIG. 8 is a rear view of the film bonding mechanism FPM. Specifically, the top view of FIG. 8 shows the state of the film bonding mechanism FPM before bonding the film 6 to the semiconductor wafer W. The second view from the top of FIG. 8 shows the state of the film bonding mechanism FPM while bonding the film 6 to the semiconductor wafer W. The third view from the top of FIG. 8 shows the state of the film bonding mechanism FPM after bonding the film 6 to the semiconductor wafer W. The bottom view of FIG. 8 shows the state of the film bonding mechanism FPM after peeling off, from the outer peripheral support member 5, an unnecessary portion (a portion other than the portion bonded to the semiconductor wafer W) of the single-layer film F1 (film 6) bonded to the outer peripheral support member 5.
[0046] In the illustrated example, the film application mechanism FPM is a mechanism used to apply a film 6, such as a dry film resist, to a semiconductor wafer W. The film application mechanism FPM is configured to apply the film 6 to a semiconductor wafer W, which is circular in top view and placed on a table TB, which is circular in top view. In the illustrated example, the film application mechanism FPM includes a film supply unit 3, a film take-up unit 4, a carrier film take-up unit 8, and a moving unit MU. Specifically, as shown in the upper view of FIG. 8 , the film supply unit 3 is disposed on the Y1 side of the table TB, and the film take-up unit 4 is disposed on the Y2 side of the table TB. The two-layer film F2 is supplied from the film supply unit 3. In the illustrated example, a first left rear sensor 15BL1 and a second left rear sensor 15BL2 (see the lower view of FIG. 4 ) are provided to detect the state (e.g., remaining amount, sagging) of the two-layer film F2 in the film supply unit 3. The same applies to the sensor 15 disposed outside the left front light-transmitting member 14FL (see the upper view of FIG. 4 ). The right rear sensor 15BR (see the bottom diagram in FIG. 4 ) is provided to detect the state (e.g., amount of recovered film, sagging film, etc.) of the used film in the film winding unit 4. The same applies to the sensors 15 located on the outside of the right front light-transmitting member 14FR (see the top diagram in FIG. 4 ) and the upper light-transmitting member 14U (see the bottom diagram in FIG. 4 ). In the illustrated example, the left door member 11L (see the bottom diagram in FIG. 4 ) is opened and closed when replacing the film supply unit 3, and the right door member 11R (see the top diagram in FIG. 4 ) is opened and closed when replacing the film winding unit 4. In the illustrated example, the two-layer film F2 is formed by laminating a carrier film 7 on one surface of a film 6 having a functional adhesive surface. The carrier film 7 is peeled off from the two-layer film F2 by a pinch roller 9 to form a single-layer film F1 (film 6). The carrier film 7 is then wound onto the carrier film winding unit 8. Then, by moving the moving unit MU (second moving unit MU2) in the Y2 direction as indicated by the arrow AR7 in the second diagram from the top in Figure 8, the single layer film F1 (film 6) is attached to the surfaces of the semiconductor wafer W and the outer peripheral support member 5 (see the lower diagram in Figure 1), and the film cutting device CU cuts the single layer film F1 (film 6) along the semiconductor wafer W.8, the unnecessary portion (the portion other than the portion attached to the semiconductor wafer W) of the single-layer film F1 (film 6) attached to the outer peripheral support member 5 is peeled off from the outer peripheral support member 5. The two-layer film F2 may be a three-layer film having a protective film on the opposite side of the carrier film.
[0047] The table TB is configured to be raised and lowered by a table lifting mechanism EM, which includes slide rods RD and a lower cover member BC. Specifically, the table TB is fixed to the upper ends of four slide rods RD, which are supported on a frame FM for free movement, via the lower cover member BC. That is, the table lifting mechanism EM is configured to raise and lower the table TB by raising and lowering the slide rods RD using the driving force of a driving source (not shown), such as an air cylinder. The table TB also includes a portion of an intake passage, one end of which opens to the mounting surface and the other end of which is connected to a suction source (not shown), such as a pump. In the illustrated example, the intake passage includes a groove formed in the mounting surface (top surface) of the table TB and a plurality of through-holes (holes that vertically penetrate the table TB) formed within the groove. Therefore, the semiconductor wafer W is attracted to the table TB by the suction action of the suction source.
[0048] As shown in the upper diagram of FIG. 6 , a pair of slide shaft members SX extending horizontally (in the direction perpendicular to the rotation axis of the pinch roller 9 (Y-axis direction)) are disposed on one side (X1 side) of the table TB in the direction parallel to the rotation axis of the pinch roller 9 (X-axis direction). A moving unit MU including a first moving unit MU1 and a second moving unit MU2 is supported on the slide shaft members SX so as to be slidable horizontally. The moving unit MU is configured to move horizontally by the driving force of a driving source (not shown), such as an air cylinder. In the illustrated example, the center rear door member 11BC (see the lower diagram of FIG. 4 ) is opened and closed during maintenance of the moving unit MU, the left rear door member 11BL (see the lower diagram of FIG. 4 ) is opened and closed during maintenance of the film supply unit 3 and the carrier film take-up unit 8, and the right rear door member 11BR (see the lower diagram of FIG. 4 ) is opened and closed during maintenance of the film take-up unit 4.
[0049] The second moving unit MU2 has a pressure roller 20 that presses the film 6 applied to the front surface of the semiconductor wafer W on the table TB. The pressure roller 20 is an example of a pressing member, and at least the roller surface of the pressure roller 20 is formed of an elastic material such as rubber. The pressure roller 20 is also called a laminating roller. The film 6 applied to the front surface of the semiconductor wafer W on the table TB is stretched at an angle under tension in a vacuum. Due to the absence of air in the vacuum chamber VC and the angle (inclination) at which the tension is applied, air bubbles are less likely to form in the film 6 and wrinkles are less likely to form, even when the film 6 is applied to a semiconductor wafer W with an uneven surface, resulting in high-quality lamination with a high yield.
[0050] As shown in the top diagram of Fig. 8, by disposing the first moving unit MU1 on one end side (Y1 side) of the slide shaft member SX, the film bonding mechanism FPM can apply the layer of film F1 (film 6) to the front surface side of the semiconductor wafer W. The top diagram of Fig. 8 shows the state of the film bonding mechanism FPM when the layer of film F1 (film 6) is applied to the front surface side of the semiconductor wafer W in an inclined state (a state in which the Y2 side portion is higher than the Y1 side portion).
[0051] Thereafter, the table TB is raised by the table lifting mechanism EM as shown by the arrow AR6 in the top diagram of FIG. 8, and the Y1 side edge of the semiconductor wafer W placed on the table TB is brought into contact with the single layer film F1 (film 6) as shown in the second diagram from the top of FIG.
[0052] Thereafter, as shown by arrow AR7 in the second diagram from the top in Fig. 8, the film bonding mechanism FPM moves the second moving unit MU2, which is located at one end (Y1 side) of the slide shaft member SX, to the other end (Y2 side) of the slide shaft member SX, thereby allowing the pressure roller 20 to press and bond the single layer film F1 (film 6) to the surface of the semiconductor wafer W. The third diagram from the top in Fig. 8 shows the state of the film bonding mechanism FPM when the single layer film F1 (film 6) has been bonded to the surface of the semiconductor wafer W.
[0053] The pressure roller 20 may be configured to adjust its pressure according to the pressing area of the semiconductor wafer W (the contact area between the pressure roller 20 and the semiconductor wafer W) using a pressure adjustment mechanism (not shown).
[0054] Additionally, a rectangular, annular outer support member 5 (see the lower diagram in FIG. 1 ) is provided on the outer periphery of table TB. Outer support member 5 is also called a bumper member, and has an upper surface 5a that functions as a contact surface against which film 6 comes into contact when pressure roller 20 presses film 6. Outer support member 5 is supported so as to be able to move up and down by a lifting support mechanism (not shown), and is configured so that the heights of the four corners of outer support member 5 can be adjusted separately. In the illustrated example, outer support member 5 is also called a digital bumper because its height level is adjusted by computer control.
[0055] When pressing the single-layer film F1 (film 6), the pressing roller 20 rolls on the upper surface 5a of the outer peripheral support member 5, the height of which has been adjusted, while being in contact with the upper surface 5a. The upper surface 5a of the outer peripheral support member 5 may be coated with Teflon (registered trademark), Tosical (registered trademark), or the like, to facilitate peeling of the stuck film 6.
[0056] Here, referring again to FIG. 7, the procedure of the work performed by the film pasting device 100 after the film 6 has been pasted onto the semiconductor wafer will be described.
[0057] After the film 6 is attached to the semiconductor wafer, the film attachment device 100 performs vacuum break (venting to the atmosphere) using the slow vent valve (step ST11). Specifically, the film attachment device 100 opens the first vacuum valve VL1, one of the three vacuum valves VL, to slowly increase the pressure in the vacuum chamber VC. This is to prevent a sudden increase in pressure in the vacuum chamber VC from adversely affecting the components of the film attachment device 100. This is also to prevent a relatively loud noise (vacuum break sound) from being generated as a result of a sudden increase in pressure in the vacuum chamber VC.
[0058] Thereafter, the film bonding device 100 raises the upper lid member TC to open the upper opening UH of the vacuum chamber VC (step ST12). Specifically, the film bonding device 100 operates an upper lid member lifting / lowering mechanism (not shown) to raise the upper lid member TC.
[0059] Thereafter, the film bonding device 100 slides the upper lid member TC to the outside of the upper opening UH of the vacuum chamber VC (step ST13). Specifically, the film bonding device 100 operates a linear actuator (not shown) to slide the upper lid member TC to the Y1 side (right side) to the position shown in the right diagram of FIG. 3, that is, until the upper opening UH is completely exposed.
[0060] The film bonding apparatus 100 then cuts the film using the film cutting device CU (step ST14). Specifically, the film bonding apparatus 100 lowers the film cutting device CU to bring the blade BD into contact with the film 6, thereby trimming the film 6. The arrow AR8 in the third diagram from the top of FIG. 8 represents the circular motion of the blade BD along the edge of the semiconductor wafer W. The film cutting device CU may also be configured to cut the film 6 using a laser. In this case, a portion of an exhaust passage may be formed between the table TB and the outer peripheral support member 5, with one end opening to the mounting surface and the other end connected to an exhaust device (not shown) such as an exhaust fan. The exhaust passage is a passage for discharging smoke and other exhaust gases generated when the film cutting device CU cuts the film using a laser, and includes the annular gap between the table TB and the outer peripheral support member 5. In other words, the exhaust device and exhaust passage may be configured not only to remove unwanted materials generated when the film cutting device CU cuts the film, but also to function as an air knife. With this configuration, the air flowing through the exhaust passage can instantly cool the cut surface of the film 6 cut by the film cutting device CU, thereby achieving a relatively neat cut surface of the film 6 with few burrs, etc.
[0061] Thereafter, the film bonding device 100 peels off the unnecessary portion of the film 6 from the table TB (step ST15). In the example shown in FIG. 8 , the unnecessary portion (remaining film), which is the portion of the bonded portion of the single-layer film F1 (film 6) (the portion bonded to the semiconductor wafer W or the outer peripheral support member 5 by the pressure roller 20) other than the portion bonded to the surface of the semiconductor wafer W, is peeled off by the first moving unit MU1, which functions as a remove head, and taken up by the film winding unit 4. Specifically, the film bonding mechanism FPM peels off the unnecessary portion from the upper surface 5 a of the outer peripheral support member 5 by moving the first moving unit MU1 and the second moving unit MU2 to the positions shown in the bottommost drawing in FIG. 8 , as indicated by arrow AR9 in the third drawing from the top of FIG. 8 . The peeled unnecessary portion is then taken up by the film winding unit 4. The arrow AR10 in the bottommost drawing in FIG. 8 represents the movement of the film winding unit 4, which winds up the film 6, including the remaining film, by a set length. As a result, one layer of film F1 (film 6) remains only on the surface of the semiconductor wafer W, and the film bonding apparatus 100 can obtain the semiconductor wafer W with the film 6 bonded thereto.
[0062] Thereafter, the film bonding device 100 lowers the table TB (lower lid member BC) to open the lower opening LH of the vacuum chamber VC (step ST16). Specifically, the film bonding device 100 operates the table lifting mechanism EM to lower the table TB and the lower lid member BC to the position shown in the top diagram of Fig. 8, as indicated by arrow AR11 in the bottom diagram of Fig. 8. The film bonding device 100 also moves the first moving unit MU1 to the position shown in the top diagram of Fig. 8, as indicated by arrow AR12 in the bottom diagram of Fig. 8. This returns the film bonding mechanism FPM to the state shown in the top diagram of Fig. 8, making it ready to bond the film 6 to the next semiconductor wafer W.
[0063] Thereafter, the film bonding device 100 slides the table TB to the outside of the vacuum chamber VC (step ST17). Specifically, the film bonding device 100 operates a linear actuator (not shown) to slide the table TB to the X1 side (front side) to the position shown in the left diagram of FIG.
[0064] Thereafter, the film bonding device 100 breaks the suction of the semiconductor wafer (step ST18). Specifically, the film bonding device 100 stops the suction by the vacuum chuck provided on the table TB, and releases the suction of the lower surface of the semiconductor wafer placed on the table TB.
[0065] Thereafter, the film bonding device 100 transfers the semiconductor wafer from the table TB to the unload-side load port UL by the robot RB (step ST19). Specifically, the film bonding device 100 operates the robot RB to grasp the semiconductor wafer with the film bonded thereto that is placed on the table TB, and transfers the semiconductor wafer into the FOUP or magazine of the unload-side load port UL.
[0066] In this way, the film bonding device 100 can bond the film to the semiconductor wafer under vacuum, thereby preventing air from being trapped between the semiconductor wafer and the film.
[0067] As described above, the semiconductor manufacturing apparatus (film bonding apparatus 100) according to an embodiment of the present disclosure includes, as shown in the upper diagram of Figure 6, a table TB on which a semiconductor wafer W is placed, a pressing member (pressing roller 20) that presses the film 6 to be bonded to the semiconductor wafer W placed on the table TB, and a vacuum chamber VC that accommodates the semiconductor wafer W placed on the table TB and the pressing member (pressing roller 20).
[0068] This configuration allows the film 6 to be attached to the semiconductor wafer W in a vacuum while tension is being applied to the film 6, thereby preventing air from being trapped between the semiconductor wafer W and the film 6. This configuration also prevents problems such as wrinkling of the film 6 attached to the semiconductor wafer W and the generation of air bubbles.
[0069] 6, the film application device 100 preferably includes a lower cover member BC that covers a lower opening LH as a first penetration portion provided in the vacuum chamber VC so that the table TB can pass through. The lower cover member BC is configured to move up and down together with the table TB.
[0070] This configuration has the advantage that the lower opening LH of the vacuum chamber VC can be sealed by the lower cover member BC which can be raised and lowered together with the table TB, making it easy to apply the film 6 to the semiconductor wafer W under vacuum.
[0071] In addition, the film bonding device 100 preferably includes, as shown in the upper diagram of Figure 5, a film cutting device CU that cuts the film 6 bonded to the semiconductor wafer W, and an upper cover member TC (see the upper diagram of Figure 6) that covers an upper opening UH as a second penetration portion provided in the vacuum chamber VC so as to face the film cutting device CU that is arranged outside the vacuum chamber VC.
[0072] This configuration has the advantage that the upper opening UH of the vacuum chamber VC can be sealed with the upper cover member TC, making it easy to apply the film 6 to the semiconductor wafer W under vacuum. In addition, this configuration has the advantage that the film cutting device CU can be disposed outside the vacuum chamber VC so as to face the upper opening UH of the vacuum chamber VC, making it easy to cut off unnecessary portions of the film 6 applied to the semiconductor wafer W.
[0073] 4, the vacuum chamber VC preferably has a light-transmitting member 14. A sensor 15 is provided outside the light-transmitting member 14.
[0074] This configuration allows the sensor 15 for detecting the state of each component within the vacuum chamber VC to be located outside the vacuum chamber VC, thereby preventing sudden changes in pressure within the vacuum chamber VC from adversely affecting the sensor 15. Therefore, this configuration provides the effect of more accurate detection of the state of each component within the vacuum chamber VC compared to when the sensor for detecting the state of each component within the vacuum chamber VC is located within the vacuum chamber VC. Furthermore, this configuration reduces the frequency of malfunctions such as failure of the sensor 15, thereby improving the availability of the film application device 100.
[0075] The vacuum chamber VC also contains a film supply unit 3 around which the film 6 is wound before being applied to the semiconductor wafer W, and a film take-up unit 4 around which the used film is wound. That is, the vacuum chamber VC preferably contains at least the main parts of the film application mechanism FPM (the film supply unit 3 and the film take-up unit 4), and more preferably contains the entire film application mechanism FPM. The main parts of the film application mechanism FPM may include the carrier film take-up unit 8, the pressure roller 20, and the moving unit MU.
[0076] This configuration has the effect of making it easier to achieve a vacuum state within the vacuum chamber VC, since at least the main part or all of the film application mechanism FPM is housed within the vacuum chamber VC, compared to when part of the film application mechanism FPM is positioned outside the vacuum chamber VC.
[0077] Specifically, this configuration has the advantage of more reliably preventing the occurrence of the above-mentioned problems compared to another configuration in which, for example, a precut film 6 is placed on a semiconductor wafer W placed on a table TB, a vacuum chamber VC (vacuum cup) slightly larger in size than the semiconductor wafer W on which the precut film 6 is placed is placed, the semiconductor wafer W is covered with the vacuum chamber VC (vacuum cup) that is slightly larger in size than the semiconductor wafer W on which the precut film 6 is placed, the air inside the vacuum chamber VC is evacuated with a vacuum pump VP to create a substantially vacuum state, and a pressure roller or a diaphragm or the like installed inside the vacuum chamber VC is used to press the film 6 against the semiconductor wafer W, thereby bonding the film 6 to the semiconductor wafer W. This is because, in the other configuration, the precut film 6 is placed on the semiconductor wafer W by a robot RB or a transporter or the like, and therefore the film 6 is not bonded to the semiconductor wafer W in a state in which tension is applied to the film 6. In other words, in a configuration in which at least the main part or all of the film attachment mechanism FPM is housed within the vacuum chamber VC, the film 6 is attached to the semiconductor wafer W in a substantially vacuum state under tension within the vacuum chamber VC, which has the effect of more reliably preventing problems such as the film 6 attached to the semiconductor wafer W becoming wrinkled or air bubbles becoming trapped between the semiconductor wafer W and the film 6.
[0078] The preferred embodiments of the present invention have been described above in detail. However, the present invention is not limited to the above-described embodiments. Various modifications and substitutions may be applied to the above-described embodiments without departing from the scope of the present invention. Furthermore, the features described with reference to the above-described embodiments may be combined as appropriate unless technically inconsistent.
[0079] This application claims priority based on Japanese Patent Application No. 2024-119254, filed on July 25, 2024, the entire contents of which are incorporated herein by reference.
[0080]
Claims
1. A semiconductor manufacturing device comprising: a table on which a semiconductor wafer is placed; a pressing member that presses a film to be attached to the semiconductor wafer placed on the table; and a vacuum chamber that accommodates the semiconductor wafer placed on the table and the pressing member.
2. The semiconductor manufacturing apparatus according to claim 1, further comprising a lower cover member that covers a first penetration portion provided in the vacuum chamber to allow the table to pass through, the lower cover member being configured to rise and fall together with the table.
3. The semiconductor manufacturing apparatus according to claim 1, comprising: a film cutting device that cuts the film attached to the semiconductor wafer; and an upper lid member that covers a second penetration portion provided in the vacuum chamber so as to face the film cutting device that is arranged outside the vacuum chamber.
4. The semiconductor manufacturing apparatus according to claim 1, wherein the vacuum chamber has a light-transmitting member, and a sensor is provided outside the light-transmitting member.
5. The semiconductor manufacturing apparatus according to claim 1, wherein the vacuum chamber contains a film supply section around which the film is wound before being applied to the semiconductor wafer, and a film take-up section around which used film is wound.
6. The semiconductor manufacturing device according to claim 1, wherein a film attachment mechanism is housed within the vacuum chamber.
7. The semiconductor manufacturing apparatus according to claim 1, wherein, in the vacuum chamber, the film is attached to the semiconductor wafer under tension in a substantially vacuum state.
Citation Information
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