Liquid discharging apparatus and substrate processing device

Abstract

The present application discloses a liquid discharging apparatus and a substrate processing device. The liquid discharging apparatus is configured to be connected to a liquid discharging pipe of a substrate processing cavity, and comprises: a cavity, wherein the interior of the cavity is sequentially configured as a liquid inlet cavity, a buffer cavity and a liquid outlet cavity in a horizontal direction, the bottom of the liquid inlet cavity and the bottom of the buffer cavity are communicated by means of a first opening, the top of the buffer cavity and the top of the liquid outlet cavity are communicated by means of a second opening, and the first opening is lower than the second opening; a liquid inlet port in communication with the liquid inlet cavity and configured to be connected to the liquid discharging pipe; a liquid outlet port in communication with the liquid outlet cavity and configured to discharge liquid flowing into the liquid outlet cavity; a vacuum port in communication with the liquid inlet cavity; a vacuum generator connected to the vacuum port; and a controller configured to control the vacuum generator to adjust the air pressure in the liquid inlet cavity to be less than that in the substrate processing cavity during liquid discharging. The present application achieves the technical effect of reducing the risk of liquid in the liquid discharging apparatus flowing back to the substrate processing cavity.

Description

Drainage device and substrate processing equipment Technical Field

[0001] This application relates to the field of semiconductor equipment, and further to a draining device and substrate processing equipment. Background Technology

[0002] Semiconductor manufacturing processes include liquid treatment processes such as cleaning, etching, electroplating, and developing, and these processes are usually carried out in corresponding substrate liquid treatment equipment (e.g., substrate developing equipment and substrate cleaning equipment).

[0003] In the prior art, substrate liquid treatment apparatus typically includes: a cavity, a liquid nozzle, a substrate support mechanism, a liquid supply mechanism, and a liquid drainage mechanism. The liquid nozzle and the substrate support mechanism are disposed inside the cavity. The substrate support mechanism supports and rotates the substrate, the liquid supply mechanism supplies the appropriate liquid (e.g., developer and cleaning solution) to the liquid nozzle to perform the corresponding liquid treatment on the substrate during rotation, and the liquid drainage mechanism drains excess liquid from inside the cavity.

[0004] Specifically, the drainage mechanism typically includes a first drainage pipe, a drainage tank, a second drainage pipe, a recovery tank, and a vacuum generator. One end of the first drainage pipe connects to the bottom of the cavity, and the other end connects to the top of the drainage tank. One end of the second drainage pipe connects to the bottom of the drainage tank, and the other end connects to the recovery tank. The vacuum generator is connected to the top of the drainage tank. During drainage, the vacuum generator regulates the air pressure inside the drainage tank, making it lower than the air pressure inside the cavity. This causes the liquid inside the cavity to flow through the first drainage pipe to the drainage tank under the influence of air pressure and its own gravity. Subsequently, the liquid in the drainage tank flows through the second drainage pipe to the recovery tank under its own gravity. Therefore, the drainage tank prevents blockage and backflow in the first drainage pipe.

[0005] However, because the inside of the drain tank is under negative pressure during the draining process, there is a risk that the second drain pipe may flow back into the drain tank. Furthermore, when the drain tank is filled with liquid, the inside of the cavity is also generally under negative pressure, which may lead to a risk that the first drain pipe may flow back into the cavity. Summary of the Invention

[0006] To address the aforementioned technical problems, the purpose of this application is to reduce the risk of liquid backflow from the draining mechanism of the substrate processing apparatus into the substrate processing chamber.

[0007] To achieve the above objectives, this application provides a draining device and a substrate processing apparatus.

[0008] In some embodiments, the draining device is used to connect to a draining pipeline of a substrate processing cavity, and includes: a cavity, the interior of which is configured horizontally in sequence as an inlet cavity, a buffer cavity, and an outlet cavity, the bottoms of the inlet cavity and the buffer cavity being connected through a first opening, and the tops of the buffer cavity and the outlet cavity being connected through a second opening, wherein the first opening is lower than the second opening; an inlet port communicating with the inlet cavity for connecting to the draining pipeline; an outlet port communicating with the outlet cavity for discharging liquid flowing into the outlet cavity; a vacuum port communicating with the inlet cavity and located above the lowest position of the second opening; a vacuum generator connected to the vacuum port; and a controller configured to control the vacuum generator during draining to adjust the internal air pressure of the inlet cavity to be lower than the internal air pressure of the substrate processing cavity.

[0009] In some embodiments, the draining device is used to connect to a draining pipeline of a substrate processing cavity, and includes: a cavity, the interior of which is configured horizontally as an inlet cavity and a buffer cavity, the bottoms of the inlet cavity and the buffer cavity being connected through a first opening; an inlet port communicating with the inlet cavity for connecting to the draining pipeline; an outlet port communicating with the buffer cavity and located below the inlet port for discharging liquid flowing into the buffer cavity; a vacuum port communicating with the inlet cavity and located above the outlet port; a vacuum generator connected to the vacuum port; and a controller configured to control the vacuum generator during draining to adjust the internal air pressure of the inlet cavity to be lower than the internal air pressure of the substrate processing cavity.

[0010] In some embodiments, the substrate processing apparatus includes: a substrate processing chamber for liquid processing of a substrate; a liquid supply mechanism connected to the substrate processing chamber for supplying processing liquid; and a liquid draining mechanism including the aforementioned draining device, wherein the liquid inlet of the draining device is connected to the draining pipe of the substrate processing chamber.

[0011] In the process of discharging liquid from the substrate processing cavity, after the liquid completely submerges the first opening, the liquid separates the inner top of the inlet cavity and the inner top of the buffer cavity into two mutually isolated spaces. The vacuum generator only acts on the inner top of the inlet cavity, while the inner top of the buffer cavity and the internal air pressure of the outlet cavity are not affected, thereby preventing the risk of liquid backflow from the end of the outlet interface into the outlet cavity.

[0012] Overview of the attached figures

[0013] The preferred embodiments will now be described in a clear and easy-to-understand manner, in conjunction with the accompanying drawings, to further explain the above-mentioned characteristics, technical features, advantages, and implementation methods of this application.

[0014] Figure 1 is a schematic diagram of a substrate processing apparatus according to an embodiment of this application;

[0015] Figure 2 is a schematic diagram of a substrate processing apparatus according to another embodiment of this application;

[0016] Figure 3 is a schematic diagram of a substrate processing apparatus according to another embodiment of this application; and

[0017] Figure 4 is a schematic diagram of a substrate processing apparatus according to another embodiment of this application.

[0018] Preferred embodiments of this application

[0019] To more clearly illustrate the technical solutions in the embodiments of this application or the prior art, the specific implementation methods of this application will be described below with reference to the accompanying drawings. Obviously, the accompanying drawings described below are only some embodiments of this application. For those skilled in the art, other drawings and other implementation methods can be obtained based on these drawings without creative effort.

[0020] To keep the drawings concise, each drawing only schematically shows the parts relevant to the application; these do not represent the actual structure of the product. Furthermore, for ease of understanding, in some drawings, only one of components with the same structure or function is schematically shown, or only one is labeled. In this document, "one" can mean not only "only one" but also "more than one."

[0021] In this document, it should be noted that, unless otherwise explicitly specified and limited, the terms "installation," "connection," and "linking" should be interpreted broadly. For example, they can refer to fixed connections, detachable connections, or integral connections; they can refer to mechanical connections or electrical connections; they can refer to direct connections or indirect connections through an intermediate medium; and they can refer to the internal connection between two components. Those skilled in the art can understand the specific meaning of the above terms in this application according to the specific circumstances.

[0022] Furthermore, in the description of this application, the terms "first," "second," etc., are used only to distinguish descriptions and should not be construed as indicating or implying relative importance.

[0023] Figure 1 illustrates a draining device 310 according to an embodiment of this application. The draining device 310 is connected to a drain pipe 110 of a substrate processing cavity 100 to drain liquid inside the substrate processing cavity 100. The draining device 310 includes a cavity 320, a liquid inlet 330, a liquid outlet 340, a vacuum interface 350, a vacuum generator 360, and a controller 400.

[0024] Specifically, the interior of cavity 320 is horizontally configured as an inlet cavity 321, a buffer cavity 322, and an outlet cavity 323. The bottoms of the inlet cavity 321 and the buffer cavity 322 are connected through a first opening 324, and the tops of the buffer cavity 322 and the outlet cavity 323 are connected through a second opening 325. The first opening 324 is lower than the second opening 325, meaning the highest point of the first opening 324 is lower than the lowest point of the second opening 325, so that the liquid stored in the inlet cavity 321 and the buffer cavity 322 during drainage submerges the first opening 324. An inlet port 330 communicates with the inlet cavity 321 and is used to connect to the drainage pipe 110. An outlet port 340 communicates with the outlet cavity 323 and is used to discharge the liquid from the outlet cavity 323 (the outlet port 340 is preferably located at the bottom of the outlet cavity 323). Vacuum port 350 communicates with liquid inlet chamber 321 and is positioned above the lowest point of second opening 325 to prevent liquid from entering vacuum port 350 during drainage. Vacuum generator 360 is connected to vacuum port 350. Controller 400 is configured to control vacuum generator 360 during drainage to adjust the internal pressure of liquid inlet chamber 321 to be lower than the internal pressure of substrate processing chamber 100. It should be understood that, to facilitate the delivery of liquid into liquid inlet chamber 321 via liquid inlet port 330 and the adjustment of internal pressure of liquid inlet chamber 321 via vacuum port 350, the positions of liquid inlet port 330 and vacuum port 350 can be appropriately set by a technician, and preferably, liquid inlet port 330 and vacuum port 350 are constructed at the top of liquid inlet chamber 321.

[0025] In the above embodiment, the draining device 310 can be connected to the draining pipe 110 of the substrate processing chamber 100 through the liquid inlet interface 330 of the liquid inlet chamber 321, the vacuum generator 360 is connected to the liquid inlet chamber 321 through the vacuum interface 350, the liquid inlet chamber 321 and the buffer chamber 322 are connected through the first opening 324 at the bottom of their adjacent inner walls, the buffer chamber 322 and the liquid outlet chamber 323 are connected through the second opening 325 at the top of their adjacent inner walls, and the liquid outlet chamber 323 discharges liquid through the liquid outlet interface 340. During the draining process, the vacuum generator 360 adjusts the internal air pressure of the inlet chamber 321 until it is lower than the internal air pressure of the substrate processing chamber 100 without affecting the liquid discharge through the outlet port 340. This allows the liquid inside the substrate processing chamber 100 to enter the inlet chamber 321 under the action of air pressure and gravity. The liquid levels in the inlet chamber 321 and the buffer chamber 322 increase synchronously. After the liquid completely submerges the first opening 324, the liquid level continues to rise until the liquid begins to flow into the outlet chamber 323 from the second opening 325, and then is discharged through the outlet port 340 in the outlet chamber 323. During the aforementioned drainage process, after the liquid completely submerges the first opening 324, the liquid in the inlet chamber 321 and the buffer chamber 322 separates the area above the liquid surface in the inlet chamber 321 and the area above the liquid surface in the buffer chamber 322 into two mutually isolated regions. The vacuum generator 360 only generates a continuous negative pressure in the area above the liquid surface in the inlet chamber 321, and cannot continue to generate a negative pressure in the areas above the liquid surface in the buffer chamber 322 and the outlet chamber 323. This makes the air pressure in the areas above the liquid surface in the buffer chamber 322 and the outlet chamber 323 greater than the air pressure in the area above the liquid surface in the inlet chamber 321. This helps to suppress the backflow of liquid through the outlet port 340, or promotes the discharge of liquid through the outlet port 340, thereby reducing the risk of liquid backflow into the substrate processing chamber 100. Furthermore, the liquid inlet chamber 321 and the buffer chamber 322 are connected only by the first opening 324. When the first opening 324 is submerged in liquid, it can isolate the substrate processing chamber 100 from the liquid outlet interface 340, preventing gas backflow and thus disrupting the gas atmosphere inside the substrate processing chamber 100. It should be noted that, in this embodiment, since the first opening 324 is lower than the second opening 325, after the draining device 310 performs one drain, liquid will accumulate in the liquid inlet chamber 321 and the buffer chamber 322. Therefore, as long as the draining device 310 performs one drain, even if the draining device 310 is not in a draining state, the first opening 324 will be completely submerged in liquid to form a liquid seal, which has the function of preventing gas from entering the substrate processing chamber 100.

[0026] Preferably, the draining device 310 further includes a level sensor 370. The level sensor 370 is used to monitor whether the liquid level inside the inlet chamber 321 has reached a warning level, and the warning level is configured to be higher than the lowest position of the second opening 325 and lower than the vacuum interface 350. The controller 400 is communicatively connected to the level sensor 370 and the vacuum generator 360, and the controller 400 is configured to adjust the vacuum generator 360 (e.g., reduce the operating power of the vacuum generator 360 or turn off the vacuum generator 360) to stop the liquid level in the inlet chamber 321 from rising or falling when the level sensor 370 detects that the liquid level in the inlet chamber 321 is higher than or equal to the warning level, thereby reducing the risk that the vacuum generator 360 will suck the liquid in the inlet chamber 321 into its interior.

[0027] Preferably, the liquid level sensor 370 is a non-contact liquid level sensor, and the liquid level sensor 370 can be disposed on the outer wall of the liquid inlet cavity 321. In one embodiment of this application, the cavity 320 further includes a liquid level tube (not shown in the figure), one end of which is connected to the top end of the liquid inlet cavity 321, and the other end of which is connected to the bottom end of the liquid inlet cavity 321. The liquid level sensor 370 is disposed on the outer wall of the liquid level tube, and the liquid level tube and the interior of the liquid inlet cavity 321 have the same liquid level, so that the liquid level sensor 370 indirectly monitors whether the liquid level inside the liquid inlet cavity 321 has reached the warning liquid level.

[0028] Preferably, the drainage device 310 further includes a motor 381 and an impeller body 382. The impeller body 382 is located in the outlet chamber 323 and is drivenly connected to the motor 381 for adjusting the drainage rate of the outlet port 340. Preferably, the impeller body 382 is configured to be lower than the second opening 325 so that the impeller body 382 agitates the liquid in the outlet chamber 323, increasing the drainage efficiency of the impeller body 382 in the outlet chamber 323. Furthermore, the motor 381 is communicatively connected to a controller 400, which is configured to adjust the power of the motor 381 and the rotation direction of the impeller body 382 in real time according to actual needs. Due to the influence of the Coriolis force, when the drainage device 310 is located in the Northern Hemisphere, the direction of the vortex generated by the liquid in the outlet chamber 323 is counterclockwise. Therefore, the controller 400 can be configured to control the motor 381 to drive the impeller body 382 to rotate counterclockwise, so that the rotation direction of the impeller body 382 is consistent with the vortex direction, thereby increasing the drainage rate of the outlet port 340, and vice versa.

[0029] Preferably, the draining device 310 includes a first partition 326 and a second partition 327, which are disposed inside the cavity 320 to sequentially divide the interior of the cavity 320 into an inlet cavity 321, a buffer cavity 322, and an outlet cavity 323 in a horizontal direction. The top and side edges of the first partition 326 are sealed to the inner wall of the cavity 320, and a first opening 324 is formed between the bottom edge of the first partition 326 and the inner wall of the cavity 320. The bottom and side edges of the second partition 327 are sealed to the inner wall of the cavity 320, and a second opening 325 is formed between the top edge of the second partition 327 and the inner wall of the cavity 320. The bottom edge of the first partition 326 is lower than the top edge of the second partition 327.

[0030] Specifically, as shown in FIG1, in one embodiment of this application, the inner bottoms of the liquid outlet chamber 323, the liquid inlet chamber 321, and the buffer chamber 322 are configured to be located on the same horizontal plane. In this embodiment, the liquid outlet chamber 323 includes a region 3231 of the second opening 325 away from the buffer chamber 322 and a region 3232 of the second partition 327 away from the buffer chamber 322. The region 3232 of the second partition 327 away from the buffer chamber 322 can be used to increase the capacity of the liquid outlet chamber 323 and to accommodate the impeller body 382. As shown in FIG2, in another embodiment of this application, the inner bottoms of the liquid inlet chamber 321 and the buffer chamber 322 are configured to be located on the same horizontal plane, the inner bottom surface of the liquid outlet chamber 328 is higher than the inner bottoms of the liquid inlet chamber 321 and the buffer chamber 322, and the inner bottom surface of the liquid outlet chamber 328 is flush with the top of the second partition 327. In this embodiment, the liquid outlet chamber 328 only includes the region 3281 on the side of the second opening 325 away from the buffer chamber 322, and the region of the second baffle 327 on the side away from the buffer chamber 322 is located outside the liquid outlet chamber 328.

[0031] Figure 3 illustrates a draining device 510 according to an embodiment of this application. The draining device 510 is connected to the drain pipe 110 of the substrate processing cavity 100 to drain liquid inside the substrate processing cavity 100. The draining device 510 includes a cavity 520, a liquid inlet 530, a liquid outlet 540, a vacuum interface 550, a vacuum generator 560, and a controller 600.

[0032] Specifically, the interior of cavity 520 is horizontally configured with an inlet cavity 521 and a buffer cavity 522, the bottoms of which are connected via a first opening 524. An inlet port 530 communicates with the inlet cavity 521 and is higher than the first opening 524, for connecting to the drain pipe 110 (the inlet port 530 is preferably located at the top of the inlet cavity 521). An outlet port 540 communicates with the buffer cavity 522 and is lower than the inlet port 530, for draining liquid from the buffer cavity 522. A vacuum port 550 communicates with the inlet cavity 521 and is higher than the outlet port 540 (the vacuum port 550 is preferably located at the top of the inlet cavity 521). A vacuum generator 560 is connected to the vacuum port 550. The controller 600 is configured to control the vacuum generator 560 during draining to adjust the internal pressure of the inlet cavity 521 to be lower than the internal pressure of the substrate processing cavity 100.

[0033] In the above embodiment, the draining device 510 can be connected to the draining pipe 110 of the substrate processing chamber 100 through the inlet port 530 of the inlet chamber 521. The vacuum generator 560 is connected to the inlet chamber 521 through the vacuum port 550. The inlet chamber 521 and the buffer chamber 522 are connected through the first opening 524 at the bottom of their adjacent inner walls. The buffer chamber 522 discharges liquid through the outlet port 540. During the draining process, the vacuum generator 560 adjusts the internal air pressure of the inlet chamber 521 until it is lower than the internal air pressure of the substrate processing chamber 100 without affecting the discharge of liquid through the outlet port 540. This allows the liquid inside the substrate processing chamber 100 to enter the inlet chamber 521 under the action of air pressure and gravity, then flow from the inlet chamber 521 into the buffer chamber 522, and finally be discharged through the outlet port 540. If liquid backflow occurs in the drain device 510, the liquid level in the inlet chamber 521 and the buffer chamber 522 will gradually increase until the liquid completely submerges the first opening 524. At this time, the liquid in the inlet chamber 521 and the buffer chamber 522 will separate the area above the liquid surface in the inlet chamber 521 and the area above the liquid surface in the buffer chamber 522 into two isolated areas. The vacuum generator 560 only generates a continuous negative pressure in the area above the liquid surface in the inlet chamber 521, and cannot continue to generate a negative pressure in the area above the liquid surface in the buffer chamber 522. This makes the air pressure in the area above the liquid surface in the buffer chamber 522 greater than the air pressure in the area above the liquid surface in the inlet chamber 521. This helps to suppress the backflow of liquid through the outlet port 540, or promote the discharge of liquid through the outlet port 540, thereby reducing the risk of liquid backflow into the substrate processing chamber 100.

[0034] Preferably, as shown in FIG4, the liquid outlet 540 is configured to be higher than the first opening, so that during the liquid discharge process, the liquid can only be discharged from the liquid outlet 540 after the liquid has completely submerged the first opening 524, thereby isolating the substrate processing cavity 100 from the liquid outlet 540 and preventing gas backflow from disrupting the gas atmosphere inside the substrate processing cavity 100.

[0035] Preferably, the draining device 510 further includes a level sensor 570. The level sensor 570 is used to monitor whether the liquid level inside the inlet chamber 521 has reached a warning level, and the warning level is configured to be higher than the outlet port 540 and lower than the vacuum port 550. The controller 600 is communicatively connected to the level sensor 570 and the vacuum generator 560, and the controller 600 is configured to adjust the vacuum generator 560 (e.g., reduce the operating power of the vacuum generator 560 or turn off the vacuum generator 560) to stop the liquid level in the inlet chamber 521 from rising or falling, thereby reducing the risk of the vacuum generator 560 drawing liquid into its interior.

[0036] Referring again to Figures 1 to 4, a substrate processing apparatus 10 according to an embodiment of this application is disclosed. The substrate processing apparatus 10 includes a substrate processing cavity 100, a liquid supply mechanism 200, and a liquid drainage mechanism 300.

[0037] The substrate processing chamber 100 is used to perform liquid processing on the substrate 20. A liquid supply mechanism 200 is connected to the substrate processing chamber 100 and is used to supply processing liquid. The liquid drainage mechanism 300 includes a drainage device 310 (510) as described in any of the above embodiments, and the liquid inlet 330 (530) of the drainage device 310 (510) is connected to the drainage pipe 110 of the substrate processing chamber 100. Preferably, the drainage device 310 (510) is provided with multiple liquid inlet ports 330 (530) for simultaneous connection to multiple substrate processing chambers 100.

[0038] Specifically, the substrate processing cavity 100 further includes: a liquid nozzle 120, a substrate carrying mechanism 130, a rotating mechanism 140, and a cup-shaped baffle 150. The liquid nozzle 120 and the substrate carrying mechanism 130 are disposed inside the substrate processing cavity 100, with the substrate carrying mechanism 130 supporting the substrate 20. The liquid nozzle 120 is connected to the liquid supply mechanism 200 and is used to spray liquid onto the surface of the substrate 20. The rotating mechanism 140 drives the substrate carrying mechanism 130 to rotate the substrate 20. The cup-shaped baffle 150 collects the liquid sprayed onto the surface of the substrate 20 by the liquid nozzle 120. The drain pipe 110 of the substrate processing cavity 100 is connected to the inner bottom surface of the cup-shaped baffle 150. Furthermore, the drain mechanism 300 includes a recovery tank 390, which is connected to the outlet port 340 (540) of the drain device 310 (510) for recovering the liquid discharged from the substrate processing cavity 100.

[0039] Preferably, the substrate processing chamber 100 includes a developing chamber for developing the substrate 20. During the developing process of the substrate 20, the internal pressure of the developing chamber is approximately 60 Pa. During the draining process, the vacuum generator 360 (560) adjusts the internal pressure of the liquid inlet chamber 321 to less than 60 Pa to drain the liquid inside the developing chamber. In other embodiments of this application, the substrate processing chamber 100 includes a cleaning chamber for cleaning the substrate 20. By connecting the drain pipe 110 of the cleaning chamber to the aforementioned draining device 310 (510), backflow of gas and / or liquid from the recovery tank 390 into the cleaning chamber is prevented, thereby disrupting the gas atmosphere inside the cleaning chamber and affecting the cleaning effect of the substrate 20.

[0040] It should be noted that the above embodiments can be freely combined as needed. The above are merely preferred embodiments of this application. For those skilled in the art, several improvements and modifications can be made without departing from the principles of this application, and these improvements and modifications should also be considered within the scope of protection of this application.

Claims

1. A drainage device, characterized in that, The drain device is used for connecting with a drain pipeline of a substrate processing chamber, comprising: a cavity, an inside of the cavity is sequentially configured as a liquid inlet cavity, a buffer cavity and a liquid outlet cavity in a horizontal direction, a bottom of the liquid inlet cavity and the buffer cavity is communicated through a first opening, a top of the buffer cavity and the liquid outlet cavity is communicated through a second opening, and the first opening is lower than the second opening; a liquid inlet interface, which is communicated with the liquid inlet cavity and used for connecting the drain pipeline; a liquid outlet interface, which is communicated with the liquid outlet cavity and used for discharging liquid flowing into the liquid outlet cavity; a vacuum interface, which is communicated with the liquid inlet cavity and higher than a lowest position of the second opening; a vacuum generator, which is connected with the vacuum interface; a controller, which is configured to control the vacuum generator to adjust an internal air pressure of the liquid inlet cavity to be less than an internal air pressure of the substrate processing chamber during draining.

2. The drainage device according to claim 1, wherein Further comprising: a liquid level sensor, which is used for monitoring whether an internal liquid level of the liquid inlet cavity reaches a warning liquid level, and the warning liquid level is configured to be higher than the lowest position of the second opening and lower than the vacuum interface; wherein the controller is configured to adjust the vacuum generator to stop rising or falling of the liquid level in the liquid inlet cavity when the liquid level in the liquid inlet cavity monitored by the liquid level sensor is equal to or higher than the warning liquid level.

3. The drain device of claim 1, wherein: the liquid inlet interface is arranged at a top of the liquid inlet cavity, and / or the liquid outlet interface is arranged at a bottom of the liquid outlet cavity.

4. The drainage device according to claim 1, wherein Further comprising: a motor; a impeller body, which is located in the liquid outlet cavity and drivingly connected with the motor, and used for adjusting a draining rate of the liquid outlet interface.

5. The drain device of claim 4, wherein: the impeller body is lower than the second opening.

6. The drainage device according to claim 1, wherein Further comprising: a first barrier and a second barrier, which are arranged in the inside of the cavity and used for sequentially separating the inside of the cavity into the liquid inlet cavity, the buffer cavity and the liquid outlet cavity in the horizontal direction; wherein: a top edge and two side edges of the first barrier are sealingly connected with inner walls of the cavity, and a bottom edge of the first barrier has the first opening with the inner walls of the cavity below the bottom edge; a bottom edge and two side edges of the second barrier are sealingly connected with the inner walls of the cavity, and a top edge of the second barrier has the second opening with the inner walls of the cavity above the top edge, and the bottom edge of the first barrier is lower than the top edge of the second barrier.

7. A drainage device, characterized by The drain device is used for connecting with a drain pipeline of a substrate processing chamber, comprising: a cavity, an inside of the cavity is sequentially configured as a liquid inlet cavity and a buffer cavity in a horizontal direction, a bottom of the liquid inlet cavity and the buffer cavity is communicated through a first opening; a liquid inlet interface, which is communicated with the liquid inlet cavity and used for connecting the drain pipeline; a liquid outlet interface, which is communicated with the buffer cavity and lower than the liquid inlet interface, and used for discharging liquid flowing into the buffer cavity; a vacuum interface, which is communicated with the liquid inlet cavity and higher than the liquid outlet interface; a vacuum generator, which is connected with the vacuum interface; a controller, which is configured to control the vacuum generator to adjust an internal air pressure of the liquid inlet cavity to be less than an internal air pressure of the substrate processing chamber during draining.

8. The liquid drainage device of claim 7, wherein the liquid outlet is configured to be higher than the first opening. comprising:

9. The drainage device according to claim 7, wherein a liquid level sensor configured to monitor whether an internal liquid level of the liquid inlet chamber reaches a pre-warning liquid level, and the pre-warning liquid level is configured to be higher than the liquid outlet and lower than the vacuum interface; wherein the controller is configured to adjust the vacuum generator to stop the liquid level in the liquid inlet chamber from rising or falling when the liquid level sensor monitors that the liquid level in the liquid inlet chamber is higher than or equal to the pre-warning liquid level. comprising:

10. A substrate processing apparatus, characterized by, a substrate processing chamber configured to perform liquid processing on a substrate; a liquid supply mechanism connected to the substrate processing chamber and configured to supply a processing liquid; a liquid drainage mechanism comprising the liquid drainage device of any one of claims 1-9, wherein the liquid inlet of the liquid drainage device is connected to a liquid drainage line of the substrate processing chamber.

11. The substrate processing apparatus of claim 10, wherein the substrate processing chamber comprises a developing chamber configured to perform developing processing on the substrate; or the substrate processing chamber comprises a cleaning chamber configured to perform cleaning processing on the substrate. ​ ​

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