High-frequency half-wave rectifier diode with resonant circuitry for reverse current compensation

Abstract

The invention relates to an electronic circuit arrangement (1) for an industrial power supply designed to rectify an alternating current of at least 1 A current strength and at least 1 kHz, having: - an input (2) for connecting an AC voltage (10) designed for operation at a predefined operating frequency (15); - an output (3) for connecting a DC load; - a semiconductor diode (4); - an inductor (5); and, - a series capacitor (18), which is connected in series to the inductor (5), the series connection of inductor (5) and series capacitor (18) being electrically connected in parallel to the semiconductor diode (4), characterised in that the inductor (5) is tuned to the reverse recovery time (14) and / or the parallel capacitor (16), in such a way that when an AC voltage (10) with the specified operating frequency (15) is applied to the input (2), a voltage curve with a reduced negative voltage (23) is produced at the output. In this way, AC voltages can be rectified inexpensively with fast switching times and high currents and voltages. The invention also relates to a power converter (101) having such an electronic circuit arrangement (1).

Description

[0001] HIGH-FREQUENCY HALF-SHAFT RECTIFIER DIODE WITH RESONANCE CIRCUIT

[0002] FOR BACKWASH COMPENSATION

[0003] The invention relates to an electronic circuit arrangement with a semiconductor diode for an industrial power supply and a power converter with an electronic circuit arrangement.

[0004] Diodes, particularly semiconductor diodes including Schottky diodes, are known from the prior art. These allow electric current to flow in the forward direction and block current flow in the opposite direction. Preferred applications of diodes include voltage rectification. The advantages of semiconductor diodes, especially silicon or germanium diodes, are their ability to withstand high currents and voltages. Their disadvantages are often poor switching times, particularly long reverse recovery times, when changing the diode's state from forward to reverse bias. Schottky diodes offer fast switching times. However, Schottky diodes can only withstand low voltages.

[0005] The invention is based on the objective of creating an electronic circuit arrangement that enables the cost-effective rectification of alternating voltages under fast switching times, high currents, and high voltages. A further objective of the invention is to provide a power converter comprising such an electronic circuit arrangement.

[0006] This problem is solved by an electronic circuit arrangement having the features of claim 1 and a power converter having the features of claim 9.

[0007] Disclosed is an electronic circuit arrangement for an industrial power supply designed for rectifying an alternating current of at least 1 A current strength and at least 1 kHz, comprising:

[0008] • an input for connecting an alternating voltage designed for operation at a predetermined operating frequency,

[0009] • an output for connecting a DC load,

[0010] • a semiconductor diode,

[0011] • an inductor and

[0012] • A series capacitor connected in series with the inductor, wherein the series connection of the inductor and series capacitor is electrically connected in parallel with the semiconductor diode. The inductor of the electronic circuit arrangement is designed to be matched to the reverse recovery time or to the parallel capacitor. Alternatively, the inductor can be matched to both the reverse recovery time and the parallel capacitor. The matching is implemented such that, with an AC voltage applied to the input at the specified operating frequency, a voltage waveform with a reduced negative voltage is obtained at the output, exhibiting at least one of the following characteristics:

[0013] - the largest amount of the reduced negative voltage is decreased compared to the largest amount of an original negative voltage in an electronic circuit without a parallel-connected inductor,

[0014] - the largest amount of the reduced negative voltage is smaller than the largest amount of an adjacent positive half-wave of the voltage waveform,

[0015] - the integral over the voltage curve of one period is positive,

[0016] - the integral over a positive half-wave is at least 1.5 times larger than the integral over an adjacent negative half-wave.

[0017] This allows voltage spikes and the largest amount of negative voltage at the output to be reduced to a lower negative voltage.

[0018] The term "period" refers to the duration of a positive half-wave plus the duration of a negative half-wave.

[0019] The term "adjacent half-wave" refers to a half-wave that is immediately preceding or immediately following the previous one.

[0020] The circuit arrangement can be designed for rectifying an alternating current of at most 2 MHz, in particular for rectifying an alternating current of at most

[0021] 1 MHz.

[0022] The term "integral over voltage waveform" refers to the summation of voltage values ​​over time with a fixed sampling interval that is significantly smaller than the period. Preferably, the sampling interval is infinitesimally small. In this way, the area bounded by the horizontal zero axis (which here represents the time axis) and the voltage waveform can be determined. A positive voltage waveform, i.e., a voltage waveform above the time axis, produces a positive summation, and thus a positive value for the area. A negative voltage waveform, i.e., a voltage waveform below the time axis, produces a negative summation, and thus a negative value for the area. If the waveform of a positive half-wave is identical to the waveform of the subsequent negative half-wave in the same period, then the integral over one period is zero.The integral over one period yields a positive value if the area enclosed by the voltage curve and the time axis of the positive half-wave is larger than the area enclosed by the voltage curve and the time axis of the adjacent negative half-wave.

[0023] A diode, especially a semiconductor diode, allows current to flow in the forward direction. In the reverse direction, the diode blocks current flow. Positive voltages, measured from the anode to the cathode of the diode, induce forward current flow in the semiconductor diode. Negative voltages can, but do not necessarily, induce reverse current flow in the semiconductor diode. Under ideal conditions, however, negative voltages do not induce current flow through the semiconductor diode. Positive voltages are referred to as positive voltages. Negative voltages are referred to as negative voltages. A real semiconductor diode exhibits a reverse recovery time and / or a parallel capacitance during operation, which, at the specified operating frequency, can lead to reverse current flow and a negative output voltage.

[0024] In electrical engineering, a parallel circuit, also called a shunt circuit, is the connection of two components or networks such that all their poles with the same name are connected together. A series circuit, also called a series connection, is the connection of multiple components in electrical engineering such that all their poles are connected in series. In a series circuit, the same current flows through all components.

[0025] Alternating current (AC) is an electrical voltage whose polarity changes regularly, but whose average value over time is zero according to standards. The shape of the voltage waveform is irrelevant. The voltage waveform can be sinusoidal. In particular, it can be rectangular, triangular, sawtooth, or a combination of these. The period is the smallest definable time interval after which the same voltage waveform repeats. Positive voltages within a period in the voltage-time diagram are called positive half-waves. Negative voltages within a period in the voltage-time diagram are called negative half-waves. An industrial power supply is a facility or system that provides electrical energy. Specifically, it provides electrical energy for equipment or systems in industry.Industrial power supply systems typically convert a form of energy into electrical energy and regulate it to meet the requirements of connected devices or systems.

[0026] Examples include: plasma power supply, laser excitation power supply, induction heating power supply, battery system charging / discharging power supply, microwave heating arrangement.

[0027] By definition, the "electronic circuit" should include a semiconductor diode, but not the inductor. The "electronic circuit" is therefore the device known in the prior art. By definition, the "electronic circuit arrangement" should additionally include the inductor and the series capacitance. The semiconductor diode of the electronic circuit is connected between the input and the output. The electronic circuit corresponds to a half-wave rectifier for frequencies much lower than 10 kHz. In the operation of the aforementioned half-wave rectifier, only one half-cycle of the alternating voltage is rectified. The other half-cycle is not used. During the half-cycle in which the semiconductor diode is forward-biased, a voltage is present at the output, and a current can flow from the input to the output. In the second half-cycle, the semiconductor diode blocks and prevents current flow in the reverse direction.In other words, the electrical circuit converts an alternating voltage with a frequency much lower than 10 kHz into a pulsating direct voltage. With alternating voltages at frequencies near and above 10 kHz, negative voltages are also measured at the output of the electronic circuit. This results from the fact that the semiconductor diode cannot completely block the second half-cycle for alternating voltages near and above 10 kHz.

[0028] One aspect of a semiconductor diode is its parasitic capacitance. This parasitic capacitance constitutes the parallel capacitance. It is inherent to the diode's design and cannot be avoided. However, its value varies considerably depending on the diode's construction. A standard silicon diode typically exhibits a relatively high parasitic capacitance. If the diode is designed for high reverse voltages, the parasitic capacitance usually increases. Schottky diodes generally have a comparatively low parasitic capacitance. Therefore, they would be better suited for the frequencies mentioned, possibly even without a parallel, matched inductor. However, Schottky diodes are not suitable for high voltages.Generally speaking, for all types of semiconductor diodes: if the semiconductor diode is designed for high reverse voltages, the value of the parasitic capacitance usually also increases. To reduce the undesirable effects of parasitic capacitance, the electronic circuit design includes inductance.

[0029] This can be explained as follows:

[0030] For AC applications, the parasitic capacitance of the diode must also be considered, the adverse effects of which become particularly apparent at high frequencies. The parasitic capacitance essentially consists of two capacitances: the junction capacitance and the diffusion capacitance.

[0031] The junction capacitance is explained as follows: The pn junction of a diode has a depleted space charge region, which is depleted of free charge carriers, depending on the applied voltage. This region acts like the dielectric of a parallel-plate capacitor. Its capacitance depends on the width of this region. As the reverse voltage increases, the charge-free region widens, thus decreasing the junction capacitance.

[0032] The diffusion capacitance is explained as follows: When a forward voltage is applied, minority carrier excesses occur in the orbital regions, i.e., outside the space charge region, forming so-called diffusion charges. These spatially separated charges must be built up or reduced when the forward voltage changes, thus influencing the dynamic behavior of the diode.

[0033] The period during which a semiconductor diode does not block current flow, even though it should, is called the reverse recovery time. This effect results from the pn region of the semiconductor diode being previously flooded with charge carriers. The charge carriers must first dissipate from the pn region of the semiconductor diode in order to block current flow.

[0034] The reverse recovery time of Schottky diodes is approximately 1,000 times shorter than that of silicon diodes. However, Schottky diodes are not always suitable, especially for high-voltage applications.

[0035] In one aspect, the electronic circuit design features a pn-junction semiconductor diode with a tuned inductor connected in parallel. A pn-junction semiconductor diode is, for example, a silicon diode, germanium diode, etc., and specifically not a Schottky diode. Pn-junction semiconductor diodes are also known as SiC or GaN diodes. However, their use is rather rare due to their high cost and other disadvantages, such as higher reverse losses. In another aspect, the electronic circuit design features a semiconductor diode made exclusively of a single semiconductor material, with a tuned inductor connected in parallel. A single-semiconductor diode is, for example, a silicon diode, germanium diode, etc. This allows for a particularly cost-effective and efficient circuit design.

[0036] In one aspect, the parallel capacitance exhibits an additional capacitance. This additional capacitance is connected in parallel to the semiconductor diode. Specifically, the parallel capacitance is a resultant capacitance formed by the parasitic capacitance and the additional capacitance. As previously explained, the parasitic capacitance can be voltage-dependent. The parallel capacitance can reduce this voltage dependence. This allows an inductor to be better matched to the parallel capacitance.

[0037] In one aspect, the series capacitance has a value that is greater than, and in particular at least twice as high as, the value of the parallel capacitance. Preferably, it is at least 10 times higher than that of the parallel capacitance. This places the resonant frequency of the series capacitance and inductance far outside the operating frequency. The series capacitance is designed to prevent DC current flow through the inductance. The operating frequency is typically greater than or equal to 10 kHz.

[0038] The series capacitance can be designed in such a way that it has no filtering effect at the operating frequency.

[0039] In one aspect, the reactive power of parallel capacitance and inductance cancels each other out during operation of the electronic circuit. This occurs at the operating frequency. At other frequencies, either the reactive power of the capacitive component or the inductive component of the electronic circuit predominates. Reactive power is the power required to build up magnetic and electric fields. It is also required to charge capacitors. It occurs in electrical circuits operated with alternating current. Reactive power is used but not consumed. Its counterpart is active power. Active power is consumed to convert electrical energy into other forms of energy, such as mechanical or thermal energy.

[0040] In one aspect, the inductance is matched to the electronic circuit arrangement in such a way that the resonant frequency of the parallel resonant circuit consisting of the inductor and parallel capacitor is equal to the operating frequency. The parallel resonant circuit features the parallel capacitor and the inductor. The resonant frequency is the frequency at which the amplitude of a forced oscillation reaches its maximum. Resonant frequencies occur in systems with at least two different energy storage devices. In the electronic circuit arrangement, the two different energy storage devices are the energy of the parallel capacitor and the energy of the inductor. These form an LC resonant circuit according to the oscillation equation f0 = - ^=. L represents the magnitude of the inductance and is given in Henrys. C represents the magnitude of the capacitor and is given in Farads.

[0041] In one aspect, the resonant frequency is greater than or equal to 20 kHz. A resonant frequency greater than or equal to 200 kHz is particularly preferred.

[0042] In one aspect, the electronic circuit arrangement is designed for currents greater than or equal to 10 A and voltages greater than or equal to 400 V.

[0043] In one aspect, a power converter with the electronic circuit arrangement described here is provided. The power converter comprises the electronic circuit arrangement. The power converter is used for an industrial process arrangement. Preferably, the industrial process arrangement is a plasma process arrangement or a heating arrangement. In particular, the industrial process arrangement includes a high-frequency amplifier arrangement. The high-frequency amplifier arrangement is used to generate a high-frequency output power. In particular, the high-frequency amplifier arrangement is used for plasma excitation, such as for plasma coating processes. The high-frequency amplifier arrangement is especially preferably used for the fabrication of semiconductor structures.

[0044] A power converter is a device or system that converts electrical energy from one form to another. This can involve transforming voltage, current, or frequency. Power converters can be used to modify electrical energy in various ways, such as adapting it to the requirements of different devices, transmitting it over long distances, or achieving a specific power output.

[0045] Further advantageous embodiments are described in more detail below with reference to several exemplary embodiments shown in the drawings, to which, however, the development described here is not limited. Not all claimed features are necessarily visible in the figures.

[0046] They show schematically:

[0047] Fig. 1 shows a circuit diagram of the electronic circuit arrangement and diagrams with voltage signal waveforms,

[0048] Fig. 2 shows a circuit diagram of the electronic circuit arrangement with real components,

[0049] Fig. 2a shows a circuit diagram of an electronic circuit with real components without parallel inductance.

[0050] Fig. 3 shows the circuit diagram with a diode equivalent circuit,

[0051] Fig. 3a shows the circuit diagram with a diode equivalent circuit,

[0052] Fig. 3b shows the circuit diagram with an additional capacitor connected in parallel,

[0053] Fig. 3c shows the circuit diagram with an additional series capacitor,

[0054] Fig. 3d shows the circuit diagram with only one parallel capacitor,

[0055] Fig. 4 shows an alternating voltage signal applied to the input,

[0056] Fig. 5 shows an expected output signal without inductance of the electronic circuit arrangement under ideal conditions,

[0057] Fig. 5a shows an expected output signal without inductance of the electronic circuit arrangement under real conditions at high frequencies,

[0058] Fig. 6 shows an expected output signal of the electronic circuit arrangement with an input signal according to Fig. 4.

[0059] Fig. 7 shows an expected output signal without inductance of the electronic circuit at low frequencies of the applied AC voltage at the input and

[0060] Fig. 8 shows an exemplary arrangement for a power converter comprising an electronic circuit arrangement.

[0061] In the following description of preferred embodiments, the same reference numerals denote identical or comparable components.

[0062] The electronic circuit arrangement 1 described in the following figures comprises electronic components and / or assemblies for power applications, in particular diodes, inductors, and capacitors, e.g., for switching and / or rectifying high-frequency alternating voltages between different paths. Preferably, they rectify an alternating voltage with a current of at least 1 A and a frequency of at least 10 kHz. Such electronic components often reach their physical limits at high frequencies.

[0063] Fig. 1 shows in the center an exemplary electronic circuit arrangement 1 with an input 2 and an output 3. On the left is a diagram showing the voltage U over time t as it can be applied to the input 2 of the electronic circuit arrangement 1. The AC voltage 10 is sinusoidal here. It is to be rectified by the electronic circuit arrangement 1. On the right are two diagrams, each showing a possible voltage waveform over time t as it can be applied to the output 3 of the electronic circuit arrangement 1. The upper diagram shows a voltage waveform with an initial negative voltage 22, which is undesirable at the output 3 but can occur at high operating frequencies 15, e.g., at frequencies of 10 kHz or more.The lower diagram shows a voltage waveform with a reduced negative voltage 23, as desired compared to the voltage waveform with an initial negative voltage 22, and which can be generated by the suitably matched inductance 5. The electronic circuit arrangement 1 is designed for an industrial power supply. It is suitable for rectifying an alternating current of at least 1 A and an operating frequency 15 of at least 10 kHz. It has an input 2 for connecting an alternating voltage, which can, for example, have the waveform of the sinusoidal alternating voltage 10. The electronic circuit arrangement 1 is designed for operation at a predetermined operating frequency 15. This can be 10 kHz or higher. Furthermore, the electronic circuit arrangement 1 has an output 3 for connecting a DC load.Furthermore, the electronic circuit arrangement 1 includes a semiconductor diode 4 with a parallel capacitance 16. The parallel capacitance 16 consists exclusively of the parasitic capacitance 6 inherent in a real semiconductor diode 4, as described above, due to its operational characteristics. The electronic circuit arrangement 1 also includes an inductor 5 and a series capacitance 18 connected in series with the inductor 5. The series connection of the series capacitance 18 and the inductor 5 is electrically connected in parallel with the semiconductor diode 4.

[0064] The series capacitance 18 is a so-called DC blocking capacitance. It serves to block a DC current. Its capacitance value is designed to be so large that it has no or only a negligible influence on the functionality of the parallel circuit, consisting of inductor 5 and parallel capacitance 16. In operation, the semiconductor diode 4 has a reverse recovery time 14. This is shown, for example, in the voltage-time diagram in Fig. 7. During the reverse recovery time 14, the semiconductor diode 4 allows current to flow in the reverse direction. The semiconductor diode 4 also has a parallel capacitance 16 in operation. This is formed at least partially, and in particular completely, by a previously described parasitic capacitance 6. These are effects of a real semiconductor diode. Idealized diodes do not exhibit such properties. The parallel capacitance 16 results in a reverse recovery time 14.During operation, an undesired reverse current flows through the semiconductor diode 4, caused by the parallel capacitance 16 and the reverse recovery time 14. This results in a reduced negative voltage 25.

[0065] First, the electronic circuit arrangement 1 will be considered without the inductor 5 or with an unbalanced inductor 5. Without the inductor 5, the electronic circuit arrangement 1 is reduced to the electronic circuit 1a shown in Fig. 2a. In other words, only the semiconductor diode 4 is connected between input 2 and output 3 in the electronic circuit 1a. The alternating voltage 10 with a predetermined operating frequency 15, as shown in the left voltage-time diagram in Fig. 1, is now applied to the electronic circuit 1a. During operation of the electronic circuit 1a, at frequencies of at least 10 kHz, the maximum value 21a of the original negative voltage 22 is established at output 3, as shown in the upper right voltage-time diagram in Fig. 1. This is described in more detail in connection with Fig. 5a.

[0066] With an unbalanced inductance 5, a similar negative voltage curve can occur at output 3. This is undesirable. The balanced inductance 5 reduces the maximum value 21a of the original negative voltage 22 at output 3, as shown in the upper right voltage-time diagram in Fig. 1, to the maximum value 21 of the reduced negative voltage 24, as shown in the lower right voltage-time diagram in Fig. 1.

[0067] This is described in more detail in connection with Figs. 5, 5a and 6.

[0068] To assess the success of the tuning of inductance 5, the largest value 21a of the original negative voltage 22 can be compared with the largest value 21 of the reduced negative voltage 24, as described previously. The success of the tuning is better the smaller the ratio of the largest value 21 of the reduced negative voltage 23 to the largest value 21a of the original negative voltage 22. Alternatively or additionally, the success of the tuning of inductance 5 can be assessed by comparing the largest value 21 of the reduced negative voltage 23 with the largest value 21b of an adjacent positive half-wave 28 of the voltage waveform. The success of the tuning is better the smaller the ratio of the largest value 21 of the reduced negative voltage 23 to the largest value 21b of an adjacent positive half-wave 28.

[0069] Alternatively or additionally, the success of the tuning of the inductance 5 can be assessed by determining the integral over the voltage curve of one period.

[0070] If this is positive, then the tuning of inductance 5 is successful.

[0071] The success of the balancing is greater the larger the ratio of the integral over a positive half-wave 28 to the integral over an immediately following negative half-wave. Referring to the upper right voltage-time diagram in Fig. 1, this success is not achieved. Here, the magnitudes of the integrals of the positive half-wave 28 and the negative half-wave 29 are equal. Thus, the integral over one period is zero. In the lower right voltage-time diagram in Fig. 1, the maximum magnitude of the reduced negative voltage 21 is less than the maximum magnitude of the adjacent positive half-wave 21b. Furthermore, the area enclosed by the time axis for the negative half-wave 19 is smaller than that for the positive half-wave 28. Therefore, according to the definition above, the lower right voltage-time diagram in Fig. 1 shows success.

[0072] The inductance 5 can be tuned to the reverse recovery time 14. Furthermore, the inductance 5 can also be tuned to the reverse recovery time 14 and the parallel capacitance 16, or exclusively to the parallel capacitance 16. This tuning contributes to ensuring that, when an AC voltage 10 is applied to the input 2 of the electronic circuit arrangement 1 at the specified operating frequency 15, a voltage waveform with a reduced negative voltage (23) is established at the output, which exhibits at least one of the following properties:

[0073] - the largest amount of the reduced negative voltage 21 at output 3 is reduced compared to the largest amount of the original negative voltage 21a in an electronic circuit 1a,

[0074] - the largest amount 21 of the reduced negative voltage 23 is smaller than the largest amount 21b of an adjacent positive half-wave 28 of the voltage waveform,

[0075] - the integral over the voltage curve of one period is positive,

[0076] The integral over a positive half-wave 28 is at least 1.5 times larger than the integral over an immediately following, adjacent negative half-wave. The alternating voltage 10 can, for example, be described by a sinusoidal waveform. This is illustrated graphically in Fig. 1 (left) and Fig. 4. Here, the voltage U is plotted against time t in a coordinate system. Positive voltages U are plotted above the horizontal axis. Negative voltages U are plotted below the horizontal axis. The alternating voltage 10 is divided into a positive half-wave 8 and a negative half-wave 9. The positive half-wave 8 of the alternating voltage 10 represents the voltages U with a positive sign. The negative half-wave 9 represents the voltages U with a negative sign. A positive half-wave 8 and a negative half-wave 9 form one period of the alternating voltage 10 with period T.

[0077] A semiconductor diode 4 can be described by an equivalent circuit. An equivalent circuit for the electronic circuit 1a is shown in Fig. 3a. The semiconductor diode 4 comprises an ideal semiconductor diode 13 and a parasitic capacitance 6. The parasitic capacitance 6 is electrically connected in parallel to the ideal semiconductor diode 13. In the exemplary embodiment, the parasitic capacitance 6 forms the parallel capacitance 16.

[0078] Under ideal conditions, the semiconductor diode 4 in the electronic circuit 1a corresponds to an ideal semiconductor diode 13. If an alternating voltage 10 is applied to an ideal semiconductor diode 13, a positive voltage waveform 12 is measured at the output 3, as shown in the voltage-time diagram in Fig. 5. The positive voltage waveform 12 contains only one positive half-wave 11. It does not contain any negative voltages. Thus, the positive voltage waveform 12 does not contain any negative half-waves 9.

[0079] For alternating voltages 10 with very low frequencies, especially frequencies much smaller than 10 kHz, the semiconductor diode 4 from the electronic circuit 1a corresponds to an ideal semiconductor diode 13. Accordingly, the positive voltage waveform 12 is measured at the output 3 of the electronic circuit 1a for low frequencies. At higher frequencies, especially frequencies near and above 10 kHz, effects of real semiconductor diodes become increasingly noticeable.

[0080] In the operation of a real semiconductor diode 4, a reverse recovery time 14 becomes noticeable, among other things. For low frequencies, at which the reverse recovery time 14 is just beginning to have an effect, a voltage-time diagram is shown in Fig. 7. The reverse recovery time 14 is the time during which the current flows through the diode in the reverse direction. This effect occurs when the voltage U changes sign from positive to negative. This results from the fact that the semiconductor layer is still occupied with charge carriers when the voltage U changes sign. Thus, the semiconductor diode 4 conducts a current in the reverse direction until the depletion region of the semiconductor diode 4 has formed. The negative voltage U rises to a value of negative voltage 21.

[0081] For frequencies much higher than the frequency in Fig. 7, especially for frequencies greater than or equal to 10 kHz, the same voltage waveform is measured at output 3 of an electronic circuit arrangement 1a as at input 2. A corresponding voltage waveform is shown in Fig. 5a. Here, the positive half-wave 28 at output 3 corresponds to the positive half-wave 8 of the AC voltage 10 at input 2. Furthermore, the negative half-wave 29 at output 3 corresponds to the negative half-wave 9 at input 2. The original voltage 22 at output 3 is equal to the AC voltage 10 at input 2. Here, the largest magnitude of the original negative voltages 21a at output 3 corresponds to the magnitude of the negative voltages at input 2.

[0082] By using an inductance 5 matched to the electronic circuit arrangement 1, the magnitude of the original negative voltages 21a can be reduced to a magnitude of the negative voltages 21. This magnitude can be reduced to a minimum at an operating frequency f. b reduce. The operating frequency f b is typically the Frequency at which the electronic circuit arrangement 1 is operated. Fig. 6 shows a voltage-time diagram for an electronic circuit arrangement 1 in which the inductance 5 and the parallel capacitance 16 are matched. Compared with Fig. 5a, it is noticeable that the largest value of the reduced negative voltage 21 is significantly reduced.

[0083] Fig. 3b shows an embodiment of an electronic circuit arrangement 1 with an additional capacitance 17. The additional capacitance 17 is connected in parallel to the parasitic capacitance 6. Here, the parallel capacitance 16 comprises the parasitic capacitance 6 and the additional capacitance 17.

[0084] Figure 3c shows an embodiment of an electronic circuit arrangement 1 comprising a series capacitance 18. The series capacitance 18 is connected in series with the inductance 5. The value of the series capacitance 18 is at least twice the value of the parallel capacitance 16. Figure 3d shows an embodiment of an electronic circuit arrangement 1 with a series capacitance 18 and a parallel capacitance 16. Here, the parasitic capacitance 6 forms the parallel capacitance 16.

[0085] When the electronic circuit arrangement 1 is operated at an operating frequency 15, the reactive powers of the parallel capacitor 16 and the inductor 5 cancel each other out. In particular, the reactive powers of the inductor 5, the parallel capacitor 16, and the series capacitor 18 from the embodiment shown in Fig. 3c cancel each other out.

[0086] The inductance 5 is tuned to the electronic circuit 1 such that the resonant frequency 20 of the parallel resonant circuit is equal to the operating frequency 15. The parallel resonant circuit has the parallel capacitance 16 and the inductance 5.

[0087] Typically, the resonant frequency 20 is greater than or equal to 20 kHz. In a preferred embodiment, the resonant frequency 20 can also be greater than or equal to 200 kHz. In a particularly preferred embodiment, the resonant frequency is greater than or equal to 2 MHz.

[0088] The electronic circuit arrangement 1 is designed for currents greater than or equal to 10 A and voltages greater than or equal to 400 V.

[0089] Figure 8 shows an embodiment of a plasma process arrangement 100. Advantageously, the plasma process arrangement 100 comprises a power converter 101 and a plasma chamber 108. The power converter 101 has an electronic circuit arrangement 1. The power converter 101 is used for an industrial process arrangement, e.g., a plasma process arrangement, a battery charging and discharging arrangement, or a heating arrangement.

[0090] In particular, the industrial process arrangement includes a high-frequency amplifier arrangement 102. The high-frequency amplifier arrangement 102 is used to generate high-frequency output power. Specifically, the high-frequency amplifier arrangement 102 is used for plasma excitation. Examples include plasma coating processes and the fabrication of semiconductor structures.

Claims

Patent claims 1. Electronic circuit arrangement (1) for an industrial power supply designed for rectifying an alternating current of at least 1 A current strength and at least 1 kHz, comprising: • an input (2) for connecting an alternating voltage (10) designed for operation at a specified operating frequency (15), • an output (3) for connecting a DC load, • a semiconductor diode (4), • an inductor (5) and • a series capacitor (18) connected in series with the inductor (5), wherein the series connection of inductor (5) and series capacitor (18) is electrically connected in parallel with the semiconductor diode (4), characterized in that the inductor (5) is matched to the reverse recovery time (14) and / or the parallel capacitor (16) such that, when an alternating voltage (10) with the specified operating frequency (15) is applied to the input (2), a voltage waveform with a reduced negative voltage (23) is established at the output, which has at least one of the following properties: • the largest amount (21) of the reduced negative voltage (23) is reduced compared to the largest amount (21a) of an original negative voltage (22) in an electronic circuit (1a) without a parallel-connected inductor (5), • the largest amount (21) of the reduced negative voltage (23) is smaller than the largest amount (21b) of an adjacent positive half-wave (28) of the voltage waveform, • The integral over the voltage curve of one period is positive, • the integral over a positive half-wave (28) is at least a factor of 1.5 larger than the magnitude of the integral over an adjacent negative half-wave.

2. Electronic circuit arrangement according to claim 1, characterized in that the semiconductor diode (4) comprises exclusively a semiconductor material, in particular a silicon diode.

3. Electronic circuit arrangement according to one of the preceding claims, characterized in that the parallel capacitor (16) comprises a further capacitor (17) connected in parallel to the semiconductor diode (4).

4. Electronic circuit arrangement according to one of the preceding claims, characterized in that the series capacitance (18) has a value that is greater, in particular at least twice as high, as the value of the parallel capacitance (16).

5. Electronic circuit arrangement according to one of the preceding claims, characterized in that when the electronic circuit arrangement (1) is operated at operating frequency (15), the reactive powers of parallel capacitance (16) and inductance (5) cancel each other out.

6. Electronic circuit arrangement according to one of the preceding claims, characterized in that the inductance (5) is matched to the electronic circuit arrangement (1) such that the resonant frequency (20) of the parallel resonant circuit comprising the parallel capacitance (16) and the inductance (5) is equal to the operating frequency (15).

7. Electronic circuit arrangement according to claim 5, characterized in that the resonant frequency (20) is greater than or equal to 20 kHz, preferably greater than or equal to 200 kHz, in particular greater than or equal to 2 MHz.

8. Electronic circuit arrangement according to one of the preceding claims, characterized in that the electronic circuit arrangement (1) is designed for currents greater than or equal to 10 A and voltages greater than or equal to 400 V.

9. Power converter (101) comprising an electronic circuit arrangement (1) according to one of the preceding claims, characterized in that the power converter (101) is used for an industrial process arrangement, preferably a plasma process arrangement (100) or heating arrangement, comprising in particular a high-frequency amplifier arrangement (102), wherein the high-frequency amplifier arrangement (102) is used to generate an RF output power, in particular for plasma excitation such as e.g. Plasma coating processes are preferably used for the production of semiconductor structures.

Images