Method and system for determining etching conditions

Abstract

The objective of the present invention is to provide a method for efficiently finding an experimental condition region containing an optimal solution.　To that end, a method for determining etching conditions according to the present invention comprises: classifying a result of an etching treatment having been performed using a first set of conditions, including a plurality of values of temperature and / or pressure, into one of a plurality of cases A through E, and selecting a candidate reaction that includes the material of a film to be treated in the etching treatment; if the classification result includes case B, determining a gas for treatment and a temperature value that correspond to case B as treatment conditions for the film to be treated; and if the classification result does not include case B, calculating a second set of conditions, including ranges of temperatures and pressures over which the result of etching treatment employing the selected candidate reaction is likely to be case B, according to a pattern of change in the classified plurality of cases associated with an increase or decrease in the plurality of values of temperature and / or pressure.

Description

Method and system for determining etching conditions

[0001] The present invention relates to searching for etching process conditions, and more particularly to a method and system for determining the reaction temperature on the surface of a semiconductor substrate, the desorption temperature of the product, the gas pressure, and the gas ratio, which include the etching establishment conditions.

[0002] As semiconductor elements become smaller and more three-dimensional, and the use of difficult-to-etch materials increases, there is a demand for faster optimization of etching methods, including the type of gas used, in the etching process of semiconductor manufacturing equipment.

[0003] High-aspect-ratio processing, a key technology for controlling device shape, is one of the technologies related to miniaturization and three-dimensionalization. Atomic Layer Etching (ALE) is a technology related to expanding the use of difficult-to-etch materials. The ALE process involves two reactions: one in which etchant molecules react with a film (or semiconductor substrate) to form a surface-modified layer, and the other in which the material forming the surface-modified layer desorbs. Searching for optimal process conditions for this ALE process requires experiments to find optimal values ​​for gas type, mixture ratio, pressure, reaction temperature for the surface-modified layer formation reaction, and desorption temperature for the material forming the modified layer. To determine the optimal conditions for these parameters depending on the composition and structure of the target film, etching trial experiments are conducted, using film thickness as an evaluation index to determine whether etching occurs.

[0004] A method for detecting the etching end condition in an established etching method has been reported in Patent Document 1. This detection method monitors the emission intensity of a specific wavelength from the start of etching and detects the etching end from changes in that intensity. Specifically, Patent Document 1 aims to "reliably detect the etching end point even in devices with patterns with a small aperture ratio," and discloses the following as an invention for a method for detecting the etching end point of a semiconductor device: "In a scribe region B between element regions A where contact holes 5 are to be etched, a nitride film pattern 8 having an area larger than the contact holes 5 is left. An oxide film 3 is formed to cover the entire area, and then resist patterning is performed. During etching, attention is paid to the presence or absence of N2 emission from the dummy pattern in the scribe region, and this is monitored. When the etching tip reaches the nitride film dummy pattern 8, N2 with a high emission intensity is emitted from an area larger than the contact holes 5, which can be easily and reliably monitored and used as a reference for endpoint detection."

[0005] Japanese Patent Application Publication No. 08-097192

[0006] In etching condition search, the etched state as the surface state of the film must be evaluated in multiple trial processes, and trial conditions linked to a good etched state must be extracted and presented. Conventionally, to find a condition region where etching is possible and linked to this good etched state, evaluation of the film thickness to determine whether etching is successful or not is required, and the search end point must be determined by an experienced person, making it difficult to perform an efficient search for a condition region that is not subject to personal judgment. Therefore, the present invention aims to provide a method for efficiently searching an experimental condition region including an optimal solution.

[0007] In order to solve the above-mentioned problems, one representative etching condition determination method of the present invention is a method for determining etching conditions in which a film to be processed on a sample placed inside a container is etched by supplying a predetermined processing gas into the container and maintaining the temperature of the sample and the pressure inside the container at predetermined values, and the method determines whether the etching condition is correct or not by determining ... The results are classified into one of a plurality of cases including case D, in which the amount of deposits is outside the allowable range and the film thickness decreases, and case E, in which the amount of deposits is outside the allowable range and the film thickness increases to or above the second threshold, and a candidate reaction including the material of the film to be processed in the etching process is selected. If the classification result includes case B, the processing gas and temperature values ​​corresponding to case B are determined to be the processing conditions for the film to be processed. If the classification result does not include case B, a second set of conditions is calculated including the temperature and pressure ranges in which the result of the etching process by the reaction of the selected candidate reaction may become case B, depending on the pattern of change in the classified cases accompanying increases and decreases in at least any multiple values ​​of the temperature and pressure.

[0008] According to the present disclosure, it is possible to efficiently search the experimental condition region including the optimal solution. Problems, configurations, and effects other than those described above will become apparent from the following description of the preferred embodiment of the present invention.

[0009] FIG. 1 is a diagram showing the structure of an etching condition determination system. FIG. 2 is a diagram showing an example of a GUI screen when setting a search range in setting an experimental design. FIG. 3 is a diagram showing an example of a GUI screen when setting candidate search conditions in setting an experimental design. FIG. 4 is a flowchart for searching etching process conditions. FIG. 5 is a diagram showing a surface state determination table. FIG. 6 is a flowchart for generating a new set of experimental conditions. FIG. 7 is a flowchart for product estimation. FIG. 8 is a flowchart for physical property estimation. FIG. 9 is a diagram showing an experimental condition setting policy determination table used in a search when the search lower limit temperature (T1) is equal to the hard lower limit temperature (TL). FIG. 10 is a diagram showing an experimental condition setting policy determination table used in a search when the search lower limit temperature (T1) is higher than the hard lower limit temperature (TL). FIG. 11 is a processing flowchart based on the experimental condition setting policy table. FIG. 12 is a diagram showing symbols representing one set of search result statuses. FIG. 13 is a diagram showing state patterns and corresponding determination contents when the experimental determination type combination is A and C. FIG. 14 shows the status patterns and corresponding judgment contents when the experiment judgment type combination is A and E. FIG. 15 shows the status patterns and corresponding judgment contents when the experiment judgment type combination is A, C, and E (see FIG. 4A). FIG. 16 shows the status patterns and corresponding judgment contents when the experiment judgment type combination is A and D. FIG. 17 shows the status patterns and corresponding judgment contents when the experiment judgment type combination is A, C, and D. FIG. 18 shows the status patterns and corresponding judgment contents when the experiment judgment type combination is A, D, and E. FIG. 19 shows the status patterns and corresponding judgment contents when the experiment judgment type combination is A, C, D, and E. FIG. 20 shows the status patterns and corresponding judgment contents when the experiment judgment type combination is A and C. FIG. 21 shows the status patterns and corresponding judgment contents when the experiment judgment type combination is A and E. FIG. 22 shows the status patterns and corresponding judgment contents when the experiment judgment type combination is A, C, and E. FIG. 23 shows the status patterns and corresponding judgment contents when the experiment judgment type combination is A and D. FIG. 24 is a diagram showing the state patterns and the corresponding judgment contents when the experimental judgment type combinations are A, C, and D.Fig. 25 is a diagram showing state patterns and corresponding determination contents when the combination of experiment determination types is A, D, and E. Fig. 26 is a diagram showing state patterns and corresponding determination contents when the combination of experiment determination types is A, C, D, and E. Fig. 27 is a diagram showing variations of the temperature parameter search method. Fig. 28 is a flowchart for searching for etching process conditions when the number of XPS measurements is reduced.

[0010] Hereinafter, embodiments of the present invention will be described with reference to the drawings. However, the present invention is not limited to these embodiments. In addition, in the description of the drawings, identical parts are denoted by the same reference numerals. When there are multiple components having the same or similar functions, they may be described by using the same reference numerals with different subscripts. Furthermore, when it is not necessary to distinguish between these multiple components, the subscripts may be omitted. The position, size, shape, range, etc. of each component shown in the drawings may not represent the actual position, size, shape, range, etc., in order to facilitate understanding of the invention. Therefore, the present invention is not necessarily limited to the position, size, shape, range, etc. disclosed in the drawings.

[0011] [Summary of the Present Disclosure] The present disclosure provides a search method in which the process conditions to be searched are reaction temperature, desorption temperature, gas ratio, and pressure. The search method classifies multiple etching results over a predetermined temperature and pressure range into five cases (A to E) based on the changes in deposition and film thickness. The search method determines the next temperature and pressure range corresponding to the change patterns (A to E) associated with temperature increases and decreases, and presents the next experimental conditions. The present disclosure also provides a search method in which a set of experimental conditions with the same gas ratio and pressure, including multiple reaction temperature conditions or desorption temperature conditions, is referred to as a set. The surface condition is determined and assessed on a set-by-set basis, and experiments, measurements, surface condition determination, and generation of next experimental conditions are repeated for each set. Note that a set may contain only one experimental condition. The present disclosure also provides a search method in which data on product species, composition, and film thickness changes on the wafer surface during processing are measured using an optical measurement device, a film thickness meter, and an XPS (X-ray Photoelectron Spectroscopy) measurement device, and the data is used to classify the results into five states (A to E) based on an index combining the deposition condition and film thickness changes on the substrate surface. The present disclosure also provides a search method for generating next experimental conditions based on the judgment criteria for generating a next set of experimental conditions, in which five states are judged to be correct or incorrect for one set of experimental results. If etching is successful (B), the search is terminated. If all results are no reaction (A), experimental conditions are generated by changing the reaction temperature, desorption temperature, pressure, and gas ratio. If states (C) to (E) are encountered, surface deposits and vapor pressure curves of candidate molecules are estimated. The present disclosure also provides a search method for generating and recording a data set that associates measurement conditions obtained in a search experiment with surface state data. The present disclosure also provides a search method suitable for condition search in ALE isotropic etching.

[0012] Example 1 [Configuration of the Determination System] FIG. 1 is a diagram showing the configuration of an etching condition determination system 5000. The determination system 5000 etches a film to be processed on a sample (wafer 15) placed inside a container (experimental chamber 70) by supplying a predetermined process gas to the inside of the container and maintaining the temperature of the sample and the pressure inside the container at predetermined values. Specifically, the determination system 5000 includes an experimental apparatus 5001 (mainly the experimental chamber 70), a measurement device 5002 (XPS chamber 72), a control system (mainly the control device 27), and a search system (input / output unit 60, data storage unit 57, and information processing unit 50). The control device 27 controls the experimental system and analysis system via an interface unit 55. The control device 27, input / output unit 60, data storage unit 57, and information processing unit 50 all have a network connection unit 54 and are connected via a network 56.

[0013] The control device 27 includes a CPU 51a, a memory 52a, an auxiliary storage device 53a, a network connection unit 54a, and an interface unit 55. The input / output unit 60 includes a network connection unit 54b, a display device 61, and an input device 62. The data storage unit 57 includes a storage device (hard disk, memory, etc.) that stores data, and a network connection unit 54c. The information processing unit 50 includes a CPU 51d, a memory 52d, an auxiliary storage device 53d, and a network connection unit 54d.

[0014] (Experimental Apparatus 5001) In an experimental chamber 70, a wafer 15 is etched using plasma generated inside. The experimental chamber 70 has a sample stage 1a, on which a wafer 15 is placed. To control the temperature of the sample stage 1, a coolant flow path 3 is disposed within the sample stage 1a, and a thermometer 4 is disposed on the surface of the sample stage 1a. An IR lamp 9 heats the wafer 15 on the sample stage 1. A control device 27 controls the coolant flowing through the coolant flow path 3 and the IR lamp 9 to set the temperature of the wafer 15 on the sample stage 1a (hereinafter also referred to as "substrate temperature") to a predetermined temperature.

[0015] Regarding the plasma processing in the experimental chamber 70, the gas supply device 23 supplies the processing gas used in the etching process to the experimental chamber 70. The flow meter 35 measures (monitors) the flow rate of the gas supplied from the gas supply device 23. The control device 27 controls the gas supply device 23 to supply the gas to the experimental chamber 70 based on the gas flow rate measured by the flow meter 35. The control device 27 generates an electric field by electromagnetic induction by temporally varying the magnetic field generated around the ICP (Inductively Coupled Plasma) coil 29. Electrons accelerated by the electric field collide with gas molecules, etc., resulting in the generation of plasma. The plasma, gas radicals, ions, etc. enter the experimental chamber 70 via the gas flow path 13 and reach the wafer 15. During the processing of the wafer 15, light emission phenomena occur, such as plasma emission due to gas radicals and ions, plasma emission due to ions dissociated from the film to be etched, and reaction products. The optical spectrum measurement unit 7 detects light emission inside the experimental chamber 70 through the window 10. The control device 27 grasps the state of the plasma processing based on the detection results of the optical spectrum measurement unit 7. Furthermore, the film thickness meter 11 measures the film thickness of the wafer 15 through the window 10. For example, a spectroscopic ellipsometer can be used as the film thickness meter 11. The control device 27 acquires information about the film thickness of the wafer 15 measured by the film thickness meter 11.

[0016] Regarding exhaust control of the experimental chamber 70, a pressure gauge 5 measures the pressure inside the experimental chamber 70. The pressure gauge 5 is connected to a gas supply device 23, and gas is supplied from the gas supply device 23 so that the experimental chamber 70 is maintained at a predetermined pressure. A valve 17a adjusts the opening of the flow path between the chamber 70 and the exhaust device 21a. A QMASS 19 ionizes gases and the like inside the experimental chamber 70 and measures the ions for each mass. The exhaust device 21a exhausts the gas inside the experimental chamber 70 to the outside. A control device 27 controls the valve 17a, the QMASS 19, and the exhaust device 21a.

[0017] (Measurement device 5002) In the XPS chamber 72, the state of chemical bonds on the surface of the plasma-processed wafer 15 is analyzed by X-ray photoelectron spectroscopy. The wafer 15 is plasma-processed in the experimental chamber 70, transferred from the wafer transfer port 31 of the experimental chamber 70 to the transfer tube 33, and then reaches the sample stage 1b in the XPS chamber 72.

[0018] In the XPS chamber 72, the wafer 15 is irradiated with X-rays from a predetermined X-ray source. The XPS measurement unit 25 measures photoelectrons emitted from the wafer 15. The valve 17b and the exhaust unit 21b are used to set the XPS chamber 72 to a predetermined pressure. The control device 27 controls the valve 17b and the exhaust unit 21b to set the measurement conditions, and the XPS measurement unit 25 acquires the measurement results.

[0019] 2 and 3, an example of a GUI screen displayed on the display device 61 will be described. A user of the analysis system 5000 checks the experimental conditions via the GUI screen and inputs the conditions for setting the input device 62.

[0020] 2 is a diagram showing an example of a GUI screen for setting a search range in setting an experimental plan. For temperature, a minimum value 100, a maximum value 102, and an auxiliary parameter 104 are set. For pressure, a minimum value 106, a maximum value 108, and an auxiliary parameter 110 are set. For gas, molecular information 112, a flow rate (minimum) value 114 indicating the minimum flow rate value, and a flow rate (maximum) value 116 indicating the maximum flow rate value are set. When n (n is a positive integer) multiple gases are used, molecular information, a flow rate (minimum) value, and a flow rate (maximum) value are set for each gas. For example, for a first gas (gas 1), molecular information 112 is set. １ and flow rate (minimum) value 114 １ and flow rate (maximum) value 116 １ is set, and for the n-th gas (gas n), the molecular information 112 ｎ and flow rate (minimum) value 114 ｎ and flow rate (maximum) value 116 ｎ is set.

[0021] For the substrate, a material composition 118 and auxiliary information 120 are set. For the radicalization, an on / off 122 indicating whether radicalization is performed (on) or not (off) and the auxiliary information 120 are set. A sampling time 125 indicates the time difference between the start time of the experiment and the start time of optical measurement (film thickness measurement). For the target sequence, a temperature sequence 126 and a pressure sequence 128 are set.

[0022] 3 shows an example of a GUI screen for setting search condition candidates in the experimental design. Regarding the condition generation algorithm, a type 130, parameters 132, and auxiliary parameters 134 are set. A maximum number of experiments 136, the number of conditions in one set 138, the judgment coverage rate for all-A 140, pressure change parameters 142, the number of reduced pressure settings 144, the margin temperature Tm 146, on / off 148 and parameters 150 for the gas ratio adjustment algorithm, a calculation method 152 for the estimated temperature using the vapor pressure curve, an upper molecular weight limit 154 for the candidate molecule, a molecular structure 156 of the assumed generated compound, and auxiliary information 158 are described below.

[0023] [Explanation of Overall Flow] A method for searching for etching process conditions (hereinafter also simply referred to as "etching conditions") according to the present invention will be described. FIG. 4 is a flowchart for searching for etching process conditions. Regarding the results of the etching process performed using a first set of conditions including a plurality of values ​​of at least any one of the temperature and pressure, the information processing unit 50 classifies the results according to changes in the amount of deposits and film thickness into the following cases: A, where the amount of deposits is within an allowable range and the decrease in film thickness is smaller than a predetermined first threshold; B, where the amount of deposits is within the allowable range and the decrease in film thickness is equal to or greater than the predetermined threshold; C, where the amount of deposits is outside the allowable range and the increase or decrease in film thickness is smaller than a second threshold; D, where the amount of deposits is outside the allowable range and the film thickness decreases; and E, where the amount of deposits is outside the allowable range and the film thickness increases to or greater than the second threshold. and selects a candidate reaction including the material of the film to be treated in the etching process, and if the result of the classification includes case B, determines the values ​​of the processing gas and temperature corresponding to case B as the processing conditions for the film to be treated, and if the result of the classification does not include case B, calculates a second set of conditions including the range of the temperature and pressure within which the result of the etching process by the reaction of the selected candidate reaction may become case B, depending on the pattern of change in the classified cases accompanying an increase or decrease in at least any of the multiple values ​​of the temperature and pressure.

[0024] [Experimental Design Setting] In searching for etching process conditions, the information processing unit 50 first sets an experimental design (input of search conditions) (process 203). In the experimental design setting step, the user inputs search conditions via an input screen (GUI screen shown in FIG. 2 or 3 ) displayed on the input / output unit 60. In the GUI screen for setting the search range in Figure 2, the reaction temperature and desorption temperature (minimum value 100, maximum value 102, auxiliary parameter 104), operating pressure (minimum value 106, maximum value 108, auxiliary parameter 110), search range of the gas used (molecular information 112, flow rate (minimum) value 114, flow rate (maximum) value 116), material composition of the target substrate (material composition 118) and auxiliary chemical information (auxiliary information 120), setting for turning radicalization ON or OFF during the reaction (on / off 122, auxiliary information 124), sampling time 125 which is the time difference between the experiment start time and the measurement start time, and temperature and pressure sequence during the experiment (temperature sequence 126, pressure sequence) are input. 3, the GUI screen for setting candidate search conditions allows the input of the maximum number of search repetitions (maximum number of experiments 136), the number of conditions in one set 138, the type 130, parameters 132, and auxiliary parameters 134 of the condition generation algorithm, the judgment coverage rate 140 for all-A, pressure change parameters (pressure change parameters 142, number of reduced pressure settings 144), margin temperature tm 146, setting to turn the gas ratio adjustment algorithm ON or OFF (on / off 148, parameters 150), whether or not to use a vapor pressure curve, a calculation method 152 for an estimated temperature using a vapor pressure curve, an upper molecular weight limit 154 of the candidate molecule, and assumed product compound information (molecular structure 156 of the assumed product compound, auxiliary information 158). The information processing unit 50 stores the input information in, for example, the auxiliary storage device 53d.

[0025] [Generation of Initial Experimental Conditions] In the first stage after input is completed, the information processing unit 50 generates initial experimental conditions in process 233. The initial value of the operating pressure is set using the maximum pressure setting value 108, minimum pressure setting value 106, auxiliary parameter 110, and pressure change parameter 142. For example, when the pressure change is to be monotonically decreased or increased, the initial value is set as follows. The information processing unit 50 checks using the pressure change parameter 142 whether the pressure change method is monotonically increased or decreased, and if a monotonically increased pressure is confirmed, the minimum pressure setting value 106 is set as the initial value of the operating pressure, and if a monotonically decreased pressure is confirmed, the maximum pressure setting value 108 is set as the initial value of the operating pressure.

[0026] The initial value of the gas ratio is set by the flow rate (minimum) value 144 of each of n kinds of gases (gas 1 to n). １ ~144 ｎ and flow rate (maximum) value 146 １ ~146 ｎ The initial values ​​are set using the gas ratio adjustment algorithm 148 and the parameters 105. Regarding gas ratio adjustment, it is desirable to narrow down the flow rate range appropriately based on the user's prior information, and then conduct experiments using the appropriate combination. One suitable method for investigating the effect of gas type combinations on etching is the use of an orthogonal array.

[0027] Specifically, when seven types of gases, including purge gas, are used, and only two levels, the maximum and minimum values ​​for each, are used, eight pressure condition combinations are generated using an L8(2^7) orthogonal array. Any of these eight conditions can be used as the initial value.

[0028] When the gas flow rate is increased from two levels to three or more levels by adding a flow rate step width, the pressure condition combinations can be generated by the method using this orthogonal table.

[0029] If data on the combinations of gas flow rates and the resulting etched surface state already exists, it is also possible to generate gas flow rate ratio combinations using response surface methodology. The information processing unit 50 can generate initial gas ratio settings by setting a surface approximation model in response surface methodology (RBF interpolation, Kriging interpolation, Gaussian process interpolation, neural network interpolation, support vector interpolation, related vector regression interpolation, random forest regression interpolation, etc.) using the gas ratio adjustment algorithm 148 and parameters 150.

[0030] [Setting the Initial Values ​​of Temperature Conditions for a Set of Multiple Experimental Conditions] The range of minimum value 100 and maximum value 102 of the temperature search range entered on the experimental plan setting screen shown in FIG. 2 includes the upper and lower limit temperatures of the reaction temperature (Tr) and desorption temperature (Tv) for a set of multiple experimental conditions (first set of conditions). The lower limit temperature is preferably lower than the reaction temperature of the wafer 15 sample and the mixed gas, and the upper limit temperature is preferably higher than the reaction temperature of the wafer 15 and the mixed gas. Several setting methods are available (1) to (3). (1) The lower limit temperature for the initial search conditions is set to a temperature 100° C. lower than the expected reaction temperature, and the upper limit temperature is set to a temperature 100° C. higher than the expected reaction temperature. (2) The lower limit temperature for the initial search is set to the substrate temperature in the pre-processing step of the etching reaction to be searched, and the upper limit temperature is set to a temperature 100° C. higher than the expected reaction temperature. (3) The lower limit temperature for the search is set to the minimum value 100 of the search range or the lower limit temperature of the experimental apparatus 5001.

[0031] [Execution of Experiment (Process 207), Measurement (Process 208a), and Storage in DB (Process 212)] An experiment (Process 206) is carried out using the initial experimental conditions (one set) generated in Process 233.

[0032] Process 233 is performed by the information processing unit 50, and the generated set of experimental conditions is stored in the memory 52a and auxiliary storage device 53a of the control device 27 via the network 56. The lowest temperature condition in the set of experimental conditions is the first experiment in the set. The experimental conditions are called and converted by the CPU 51a into information for each control mechanism of the experimental device 5001 and the measuring device 5002, and then sent to each control mechanism via the interface unit 55. The experimental device 5001 performs plasma processing on the wafer 15 based on the experimental conditions specified by the control device 27 (process 207). Similarly, the measuring device 5002 measures the plasma-processed wafer 15 (process 208).

[0033] In the information processing unit 50, a unique ID is issued for each set of multiple experimental conditions, and the unique IDs are stored in memory 52d in the order in which the experiments were performed. The unique IDs are also stored in memory 52a of the control device 27. The experimental conditions and measurement results are associated with the unique IDs and stored in the data storage unit 57 (process 212). The unique IDs are also stored in memory 52d of the information processing unit 50.

[0034] [Sample Installation and Temperature Control] A set of multiple experimental conditions is converted by the control device 27 and executed by the experimental device 5001 and the measurement device 5002, resulting in multiple experimental operations. The experimental operations are a series of operations including sample installation, gas and pressure control, temperature adjustment, measurement (XPS measurement), and sample removal.

[0035] Specifically, the wafer 15 is placed on the sample stage 1a. The wafer 15 is cooled by the coolant flowing through the coolant flow path 3, and heated by irradiation from the IR lamp 9. Data from the thermometer 4 placed on the sample stage 1a is stored in the control device 27 via the interface unit 55, and the temperature is controlled to be the temperature under the experimental conditions. When the temperature is varied over time during the experimental operation, the control device 27 does so based on the information specified in the temperature sequence 126 in FIG. 2.

[0036] The start timing of one experimental condition among a set of multiple experimental conditions and the timing of measurements by the film thickness meter 11, optical spectrum measurement unit 7, and QMASS 19 are constantly monitored by the control device 27. The experiment start timing and measurement start timing can be adjusted using the sampling time specified in the sampling time 125 in FIG. 2. For example, if the sampling time is set to +100 ms, measurements by the film thickness meter 11, optical spectrum measurement unit 7, and QMASS 19 start 100 ms after the start of the experiment. Conversely, if the sampling time is set to -200 ms, measurements by the film thickness meter 11, optical spectrum measurement unit 7, and QMASS 19 start 200 ms before the start of the experiment. Each measurement data from the film thickness meter 11, optical spectrum measurement unit 7, and QMASS 19 is collected by the control device 27 and stored in memory 52a, linked to the unique ID stored in memory 52. ​​The measurement data linked to the unique ID is also stored in memory 52d of the information processing unit 50 via network 56. The measurement data 220 associated with the unique ID stored in the information processing unit 50 is accumulated in the data storage unit 57. The measurement data 220 acquired in the experimental chamber 70 includes optical measurement data (optical spectrum measured by the optical spectrum measurement unit 7), film thickness measurement data (film thickness data acquired by the film thickness meter 11), and QMASS measurement (QMASS data acquired by the QMASS 19).

[0037] Gas is supplied from the gas supply device 23 that receives experimental condition instruction information from the control device 27, and each gas component is measured by the flow meter 35. When the flow rate is varied over time during the experimental operation, this is done based on the information set in the pressure sequence 128 in FIG.

[0038] After a waiting time (τ) specified in the temperature sequence 126 or the pressure sequence 128, measurement is performed by the measurement device 5002. The wafer 15 is transferred to the sample stage 1b of the XPS constant chamber 72 via the wafer transfer port 31 and the transfer tube 33, and the state of the wafer 15 is measured by the XPS measurement unit 25. The XPS measurement data is stored in the control device 27, and is then stored in memory 52b in association with the unique ID saved in memory 52a. The XPS measurement data associated with the unique ID is stored in memory 52d of the information processing unit 50 via the network 56. The XPS measurement data associated with the unique ID stored in the information processing unit 50 is also accumulated in the data storage unit 57. The XPS measurement data is stored in the data storage unit 57 as measurement data 220a.

[0039] After the XPS measurement, the wafer 15 is returned to the experimental chamber 70 via the wafer transfer port 31 and the transfer tube 33 again.

[0040] The sample 15 is removed from the sample stage 1a.

[0041] This corresponds to one experiment operation.

[0042] When all experimental operations corresponding to each of a set of multiple experimental conditions are completed, measurement data 222 corresponding to all of the experimental conditions is accumulated in data storage unit 57. Note that, although the case where XPS measurement data is saved in data storage unit 57 each time an experimental operation corresponding to an experimental condition included in one set of experimental conditions is performed has been described, the present disclosure is not limited to this case. For example, XPS measurement data may be accumulated in control device 27 or information processing unit 50 until one set of experimental conditions is completed, and then all of the XPS measurement data may be accumulated in data storage unit 57 after multiple experiments corresponding to one set of experimental conditions have been completed.

[0043] [Determination] When all experiments corresponding to one set of multiple experimental conditions have been completed, the information processing unit 50 starts determination (process 216).

[0044] The information processing unit 50 uses the unique ID corresponding to each of a set of multiple experimental conditions to retrieve optical spectrum information, film thickness data (information), QMASS data (information), and XPS data (information) from the data storage unit 57 and store them in the memory 52d. A determination 217 is made as to whether the optical spectrum associated with each unique ID contains only substrate-derived signals, which are signals emitted from the wafer 15, or other signals. The determination 217 makes it possible to determine whether the amount of material adhering to the wafer 15 due to the etching process is within an acceptable range. If only substrate-derived signals are present (if the amount of material is within an acceptable range), a determination 215 is made as to whether or not the film thickness has changed with respect to the film thickness data associated with the unique ID. １ If there is no change in the film thickness, type A is assigned to the unique ID (classified as case A). If there is a change in the film thickness in the decreasing direction ((-) present), type B is assigned to the unique ID (classified as case B). Note that in the present disclosure, the determination 215 １ For example, a predetermined first threshold value may be set, and a case where the change in film thickness is smaller than the predetermined first threshold value may be determined as case A, and a case where the change in film thickness is equal to or greater than the predetermined first threshold value may be determined as case B. １ Other methods may be selected for the method 1. In the following description, the assigned type is also referred to as the "experimental determination type."

[0045] If the result of the determination 217 includes other signals (if the amount of attached matter is outside the allowable range), the signals other than the substrate-derived signal are signals derived from attached matter. ２ If there is no change in the film thickness, type C is assigned to the unique ID (classified as type C). If the film thickness changes in a decreasing direction, type D is assigned to the unique ID (classified as type D). If the film thickness changes in an increasing direction, type E is assigned to the unique ID (classified as type E). Note that in the present disclosure, the determination 215 ２In the determination 215, a predetermined second threshold is set, and a case where the change in film thickness is smaller than the predetermined second threshold is determined as case A, and a case where the change in film thickness is equal to or greater than the predetermined second threshold is determined as case B. ２ Other methods may be selected.

[0046] FIG. 5 is a diagram showing a surface condition determination table. FIG. 5 shows the relationship between each measurement data state and the determination type. The determination table shows the determination conditions for Types A to E in more detail. When a determination is made as Type A, the optical spectrum data shows no FTIR (Fourier Transform Infrared Spectroscopy) / spectrum (spectral difference), and no FTIR / spectrum (atomic group) is detected. Furthermore, the film thickness meter detects no change in film thickness (or etching rate), and no XPS data is acquired. In the case of Type A, the surface condition of the wafer 15 is in an unreactive state. The etching rate can be calculated as film thickness / processing time (nm / sec). When a determination is made as Type B, the optical spectrum data shows no FTIR (Fourier Transform Infrared Spectroscopy) / spectrum (spectral difference), and no FTIR / spectrum (atomic group) is acquired. Furthermore, the film thickness meter detects a decrease in film thickness, and no XPS data is acquired. In the case of Type B, the surface state of the wafer 15 is in a state where etching has progressed. Furthermore, when it is determined to be Type C, the optical spectrum data includes Fourier Transform Infrared Spectroscopy (FTIR) / spectrum (spectral difference) and FTIR / spectrum (atomic groups) are detected. Furthermore, the film thickness meter detects no change in film thickness, and XPS data is detected. In the case of Type C, the surface state of the wafer 15 is in a state where there is deposit and etching is inactive. Furthermore, when it is determined to be Type D, the optical spectrum data includes Fourier Transform Infrared Spectroscopy (FTIR) / spectrum (spectral difference) and FTIR / spectrum (atomic groups) are detected. Furthermore, the film thickness meter detects a decrease in film thickness, and XPS data is detected. In the case of Type D, the surface state of the wafer 15 is in a state where there is deposit and etching is active.Furthermore, when the wafer is determined to be Type E, the optical spectrum data includes Fourier Transform Infrared Spectroscopy (FTIR) / spectrum (spectral difference) and FTIR / spectrum (atomic group) is detected. Furthermore, the film thickness meter detects an increase in film thickness, and XPS data is detected. In the case of Type D, the surface condition of the wafer 15 includes deposits and is inactive for etching.

[0047] The information processing unit 50 performs the determination process for all of a set of multiple experimental conditions, associates the unique ID with the determination type, and stores the results in the data storage unit 57.

[0048] [End Determination] When the information processing unit 50 determines through determination 219 that determination for all experimental conditions in one set of multiple experimental conditions has been completed (Y), it adds 1 to the variable L of the number of repetitions and then returns to the start of experimental condition generation 204 again.

[0049] The information processing unit 50 determines whether to terminate the search. In determining whether to terminate the search, if the classification result includes the case B for the results of the etching process performed at the plurality of temperatures selected from the temperature range of the second condition set, the information processing unit 50 determines the process gas and temperature values ​​corresponding to the case B as the processing conditions for the film to be processed, and if the case B is not included, calculates a (third) condition range of the temperature and pressure that may result in the etching process due to the reaction becoming the case B, according to the pattern of change in the plurality of cases obtained by performing the classification.

[0050] Specifically, the information processing unit 50 first determines whether L is zero in decision 240. In the present disclosure, L is at least 1, which is different from zero (N), so in decision 241 it is determined whether L is equal to or greater than the value set in the maximum number of experiments 136. If decision 241 is true (Y), the user-specified condition has been met, and the search ends. If decision 241 is false (N), the information processing unit 50 performs decision 242. In decision 242, it is checked whether type B is included in the determination results corresponding to one set of multiple experimental conditions. If it is included, the etching establishment condition is included, and the search ends. If it is not included, the next set of multiple experimental conditions is generated (a second set of conditions is calculated; process 205).

[0051] [Generation of New Experimental Conditions] New experimental conditions are generated in process 205. Fig. 6 is a flowchart of the generation of a new set of experimental conditions. Fig. 6 shows the processing flow in process 205.

[0052] In a step 242, it is determined whether the determination type determined for all experimental results for a set of multiple experimental conditions is Type A.

[0053] [all-A] The information processing unit 50 determines whether to change the temperature conditions when all experiment determination types are Type A in decision 243. For example, if the user specifies a threshold value for the coverage rate of the temperature range set by the current set of multiple experimental conditions for the minimum and maximum temperatures in the search range (100 and 102, respectively) (determination coverage rate 140 for all-A), and one set of experiments is completed within a range below this threshold (N), process 245 is performed to set the temperature conditions for the next set. At this time, the pressure conditions and gas ratio conditions will be the same as the current conditions. After setting, the process of generating new experimental conditions is terminated.

[0054] On the other hand, if all experiments for a set of multiple experimental conditions have been completed with a temperature range coverage rate equal to or greater than the threshold, the same temperature range conditions are used in the next set. Then, in decision 244, it is determined whether or not the pressure conditions have been changed.

[0055] If there is a change in the pressure conditions (N in decision 244), the next set of pressure conditions is set in process 246. At this time, the temperature conditions and gas ratio conditions remain the same as the current conditions. After the settings are made, the process of generating new experimental conditions is terminated. For example, in process 246, if the classification obtained for the results of the etching process using the first set of conditions does not include case B, the pressure value for the second set of conditions may be set lower than the pressure value for the first conditions. Furthermore, the temperature and pressure ranges for the second set of conditions may include a range that is equal to or greater than the saturated vapor pressure of the substance associated with the candidate reaction.

[0056] If there is no change in the pressure conditions in decision 244 (Y in decision 244), the temperature conditions and pressure conditions will be the same as the current conditions, so the gas ratio change setting is performed in process 247. After setting, the process of generating new experimental conditions is terminated.

[0057] [Not-all-A] If in decision 242 all experimental judgment types are not Type A (N), decision 252 and steps 235, 236, and 237 are executed in a repeat loop from product-property estimation start 251 to decision 253, which determines whether processing for all experimental results in one set has been completed. In decision 252, it is determined whether the judgment value of each experimental result is Type C, Type D, or Type E, or whether it is Type A. If it is Type A, the process proceeds to decision 253 without doing anything. If it is Type C, D, or E, steps 235, 236, and 237 are executed.

[0058] [Product Estimation (Process 235)] FIG. 7 shows a specific example of product estimation in Process 235. FIG. 7 is a flowchart of product estimation. In Process 235, reaction candidates are selected based on the results of detecting light or products from the surface of the sample during the etching process. Specifically, when product estimation is started (Process 301), the information processing unit 50 retrieves optical spectrum information linked to the unique ID from the data storage unit 57 and performs listing 303 of atomic groups determined from the optical spectrum. The list generated by this process is referred to as List A. Next, a listing 305 of elements and bonding information contained in the product using the XPS spectrum is performed. The list generated by this process is referred to as List B. Next, a listing 307 of elements contained in gas composition, gas ratio conditions, and substrate information is performed. The list generated by this process is referred to as List C.

[0059] Next, the information processing unit 50 performs candidate molecular structure extraction 309. From among a plurality of element combinations obtained from information indicating the film structure disposed on the surface of the sample, including the film to be processed, and the types or compositions of substances constituting the processing gas, at least one candidate molecular structure is created, including at least one molecular substructure included in the candidate atoms constituting the product during the etching process and the bonding information of the elements constituting the candidate product, obtained using the light from the surface of the sample during the etching process. From the candidate molecular structures, a reaction candidate including a molecular structure below a predetermined upper limit is selected. Furthermore, the molecular structure below the predetermined upper limit is registered in a database. Specifically, in this process, an element combination list is generated from List C, and within the range of the element combinations listed in the element combination list, a substructure search is performed using the atomic groups included in List A and the elements and bonding information included in List B as input information, to create a list of candidate molecular structures. This list is referred to as List D.

[0060] In a preferred example of substructure search, a base molecular structure list is read from a molecular structure database based on the element combinations listed in an element combination list (List D). The read molecular structure list is designated List CC. Using a substructure search function in the RDKit library implemented in the computer language Python, List CC is searched based on the atomic groups included in List A and the elements and bond information included in List B, thereby narrowing down the candidate molecules to generate List D. List D is preferably stored in a format such as an SDF file format. Furthermore, when three-dimensional structural information of the candidate molecules is required, a conformation generation function in the RDKit library or the like is used to output the three-dimensional molecular structure from the molecular information stored in List D, and the three-dimensional molecular structure is stored in an SDF file or the like, which is then used as a list of candidate molecular structures.

[0061] Next, the information processing unit 50 narrows down the candidates by molecular weight (process 311). In process 311, the value set for the upper limit molecular weight 154 of the candidate molecular weights is used to limit the list of candidate molecular structures to a list composed of molecules equal to or less than the upper limit.

[0062] Furthermore, in process 313, it is also possible to narrow down the candidate molecular structure list by excluding molecules detected by QMASS or related molecules using the QMASS information. Then, in process 315, the information processing unit 50 adds the product structure specified by the molecular structure 156 of the assumed product compound by the user to the candidate molecular structure list.

[0063] Thereafter, the information processing unit 50 generates (317) a unique molecule ID for each molecular structure included in the candidate molecular structure list, associates the unique molecule ID with the molecular structure, and stores the ID in the data storage unit 57.

[0064] [Property Estimation (Process 236)] Fig. 8 shows a specific example of the process 236 when the target property is the vapor pressure curve of the product. Fig. 8 is a flowchart of the property estimation.

[0065] First, in process 403, the information processing unit 50 reads out candidate molecular structures from the DB. Specifically, it calls up molecular structures linked to unique IDs from the data storage unit 57. The range of this call up is molecular structures linked to all unique molecular IDs that belong to the unique ID corresponding to one experimental condition.

[0066] Next, the information processing unit 50 calculates vapor pressure data based on the molecular structure in process 405. This calculation uses estimation using the Antoine equation, estimation using a machine learning model using a molecular fingerprint corresponding to the molecular structure, estimation using a machine learning model using graph convolution that treats the molecular structure as a graph structure, or estimation using a mathematical formula or machine learning model that uses feature quantities that represent other molecular characteristics.

[0067] Returning to the description of Fig. 6, the information processing unit 50 accumulates the unique IDs assigned to each experiment in process 237, the unique molecular IDs of the estimated product molecules, and the vapor pressure data in the data storage unit 57 so as to maintain correspondence between these data.

[0068] After it is determined in decision 253 that processing for all experimental results in the set has been completed, the information processing unit 50 determines an experimental condition setting policy based on the adhesion pattern and estimated physical property values ​​in process 254. Figures 9 and 10 show a decision table for the experimental condition setting policy, and Figure 11 shows the decision flow.

[0069] [Policy for Generating Experimental Conditions] FIG. 9 shows an experimental condition setting policy decision table used in a search when the search lower limit temperature (T1) is equal to the hard lower limit temperature (TL). FIG. 10 shows an experimental condition setting policy decision table used in a search when the search lower limit temperature (T1) is higher than the hard lower limit temperature (TL). For example, if the classification results obtained for the etching process results using the first condition set do not include Case B, the temperature and pressure ranges of the second condition set are calculated for each pattern of change in the classified cases accompanying increases and decreases in the temperature values, based on the results of determining the conditional expressions for the temperature range and the conditional expressions for the vapor pressure of the substance related to the reaction, pertaining to the second condition set. Specifically, the result state pattern items in FIGS. 9 and 10 indicate combinations of experimental determination types other than combinations including Type B and combinations where all are Type A, and the candidate temperature range item for the next set is the candidate temperature range for the next search condition. Here, the symbols max(*) and min(*) respectively represent the maximum and minimum temperatures of the experimental determination pattern represented by *. TH is the upper limit temperature of the search range (maximum value 102) or the upper limit temperature determined by the equipment constraints of the experimental equipment 5001, and TL is the lower limit temperature of the search range (minimum value 100) or the lower limit temperature determined by the equipment constraints of the experimental equipment 5001.

[0070] The item for the estimated vapor pressure (VP*) judgment formula is a judgment formula that uses the estimated vapor pressure and the temperature of the experimental judgment pattern. Depending on the result state pattern, there may be one or two judgment formulas. The symbol VP*(P) represents the temperature at which pressure P occurs on the estimated vapor pressure curve. There may be multiple estimated vapor pressure data to calculate the temperature. In this case, the average, minimum, maximum, or user-specified method of the multiple temperatures VP*(P)_1, VP*(P)_2, ..., VP*(p)_n is used to create a single value. The calculation method for this estimated temperature is specified by 152 in Figure 3.

[0071] The items of judgment results (1) and (2) are the results of determining whether each judgment formula is true (T) or false (F).

[0072] The item for the policy for generating the next set of experimental conditions describes the policy for generating conditions when the truth or falsity of the judgment results (1) and (2) is met.

[0073] For example, for item 1 in Fig. 9, "A, C" in the item "Result State Pattern" indicates a case where the pattern of change in the classified multiple cases accompanying an increase or decrease in multiple temperature values ​​changes between the case A and the case C. Also, "max(C)<T<(<TH)" in the item "Next Set Candidate Temperature Range" and "max(C)>VP*(P)" in the item "Estimated Vapor Pressure (VP*) Judgment Formula" indicate a conditional formula for the temperature range related to the second condition set and the vapor pressure of the substance related to the reaction, which is determined to be true when the temperature at which the predicted vapor pressure of the substance becomes equal to the pressure in the first condition set is smaller than the maximum temperature value of the first condition set, which corresponds to the case C. If the conditional equation for the temperature range and the vapor pressure of the substance related to the reaction is false (if the item "Decision result (1) (2) is "F"), the experimental conditions for the second set of conditions are set so that the mixing ratio and pressure of the processing gas are equal to those of the first set of conditions, and the temperature range is set to a range equal to or greater than the maximum temperature value of the first set of conditions, which is the case of C, and equal to or less than the temperature at which the predicted vapor pressure of the candidate molecule is equal to the pressure of the first set of conditions plus a user-specified margin temperature ("max(C)<T<=VP*(P)+Tm" in the item "Policy for generating experimental conditions for the next set"). Furthermore, if the judgment result of the conditional equation for the temperature range and the vapor pressure of the substance related to the reaction is true (if the item "Judgment result (1) (2)" is "T"), the experimental conditions of the second condition set are set to a condition in which the mixing ratio and temperature of the processing gas are equal to those of the first condition set and the pressure is lower than that of the first condition set, or the mixing ratio of the processing gas is changed from that of the first condition set and the temperature and pressure are equal to those of the first experimental conditions ("Pressure reduction, gas ratio change" in the item "Policy for generating experimental conditions for the next set").

[0074] 9, for example, "A, D" in the item "Result State Pattern" indicates a case where the pattern of change in the classified cases accompanying an increase or decrease in the temperature values ​​changes between the case A and the case D. Furthermore, "max(A)<T<max(D), min(D)<T(<TH)" in the item "Next Set Candidate Temperature Range" and "(1)max(A)>VP*(P))" in the item "Estimated Vapor Pressure (VP*) Judgment Formula" indicate a conditional formula that is determined to be true when the temperature at which the predicted vapor pressure of the substance becomes equal to the pressure in the first conditional set is smaller than the maximum temperature value in the first conditional set, which corresponds to the case A, as a first conditional formula for the temperature range related to the second conditional set and the vapor pressure of the substance related to the reaction. Furthermore, "max(A)<T<max(D), min(D)<T(<TH)" in the item "Candidate temperature range for next set" and "(2) max(D)>VP*(P)" in the item "Estimated vapor pressure (VP*) judgment formula" indicate a conditional formula that is determined to be true when the temperature at which the predicted vapor pressure of the substance is equal to the pressure in the first conditional set is smaller than the maximum temperature value in the first conditional set, which is the case of C, as a second conditional formula for the temperature range in the second conditional set and the vapor pressure of the substance related to the reaction. If the first conditional expression and the second conditional expression are both false (if the items "Decision results (1) and (2)" are both "F"), the experimental conditions of the second set of conditions are set to be the same as those of the first set of conditions in terms of the mixing ratio and pressure of the processing gas, and the temperature range is set to be equal to or greater than the minimum temperature value of the first set of conditions, which is the case of D, and equal to or less than the temperature at which the predicted vapor pressure of the candidate molecule is equal to the pressure of the first set of conditions plus a user-specified margin temperature ("min(D)<T<=VP*(P)+Tm" in the item "Policy for generating the next set of experimental conditions").Furthermore, when the first conditional expression is true and the second conditional expression is false (when the item "judgment results (1) and (2)" are "T" and "F"), the experimental conditions of the second conditional expression are the same as those of the first conditional expression, and the temperature is lower than that of the first conditional expression, or the mixing ratio of the processing gas is changed from that of the first conditional expression, and the temperature and pressure are equal to those of the first experimental conditions, or the mixing ratio and pressure of the processing gas are changed from those of the first conditional expression, and the temperature and pressure are equal to those of the first experimental conditions. The condition is that the temperature is equal to the first set of conditions, is equal to or less than the maximum temperature of the first set of conditions, which is the case of D, and is equal to or less than the minimum temperature of the first set of conditions, which is the case of A, or the mixing ratio and pressure of the processing gas are equal to the first set of conditions, are equal to or greater than the lower limit temperature of the search specified by the user, and are equal to or less than the minimum temperature of the first set of conditions, which is the case of A (item "Policy for generating the next set of experimental conditions" includes "max(D)<T<min(A), or pressure drop, gas ratio change"). Furthermore, when the first conditional expression is false and the second conditional expression is true (when the item "Decision results (1) (2)" are "F" and "T"), the experimental conditions of the second set of conditions are set so that the mixing ratio and pressure of the processing gas are equal to those of the first set of conditions, and the temperature range is equal to or greater than the maximum temperature value of the first set of conditions, which is the case of A, and equal to or less than the maximum temperature value of the first set of conditions, which is the case of D ("max(A)<T<=max(D)" in the item "Policy for generating experimental conditions for the next set").Furthermore, when the first conditional expression is true and the second conditional expression is true (when the item "Decision results (1) and (2) are 'T' and 'T'"), the experimental conditions of the second set of conditions are set as follows: the mixing ratio and temperature of the processing gas are equal to those of the first set of conditions and the pressure is lower than that of the first set of conditions; alternatively, the mixing ratio of the processing gas is changed from that of the first set of conditions and the temperature and pressure are equal to those of the first experimental conditions; or the mixing ratio and pressure of the processing gas are equal to those of the first set of conditions and the temperature range is equal to or greater than the maximum temperature value of the first set of conditions, which is A, and equal to or less than the minimum temperature value of the first set of conditions, which is D (the item "Policy for generating experimental conditions for the next set" includes "max(A)<T<min(D), or pressure reduction, gas ratio change").

[0075] 9, for example, "A, E" in the item "Result State Pattern" indicates that the pattern of change in the classified multiple cases accompanying increases and decreases in multiple temperature values ​​changes between case A and case E. Furthermore, "max(A)<min(E)" in the item "Next Set Candidate Temperature Range" and "max(A)>VP*(P)" in the item "Estimated Vapor Pressure (VP*) Judgment Formula" indicate that the conditional formula for the temperature range related to the second condition set and the vapor pressure of the substance related to the reaction is a conditional formula that is judged to be true when the temperature at which the predicted vapor pressure of the substance becomes equal to the pressure in the first condition set is smaller than the maximum temperature value of the first condition set, which corresponds to case A. Furthermore, if the judgment result of the conditional equation for the temperature range and the vapor pressure of the substance related to the reaction is false (if the item "judgment result (1) (2) is "F"), the experimental conditions of the second set of conditions are set so that the mixing ratio and pressure of the processing gas are equal to those of the first set of conditions, and the temperature range is equal to or greater than the maximum temperature of the first set of conditions, which is the case of A, and equal to or less than the temperature at which the predicted vapor pressure of the candidate molecule is equal to the pressure of the first set of conditions plus a user-specified margin temperature ("max(A)<T<VP*(P)+Tm or min(E)" in the item "Policy for generating experimental conditions for the next set"). Furthermore, if the judgment result of the conditional equation for the temperature range and the vapor pressure of the substance related to the reaction is true (if the item "judgment result (1) (2) is "T"), the experimental conditions of the second condition set are set to a condition in which the mixing ratio and temperature of the processing gas are equal to those of the first condition set and the pressure is lower than that of the first condition set, or the mixing ratio of the processing gas is changed from that of the first condition set and the temperature and pressure are equal to those of the first experimental conditions ("pressure reduction, gas ratio change" in the item "guideline for generating experimental conditions for the next set").

[0076] 9, for example, "A, C, D" in the item "Result State Pattern" indicates a case where the pattern of change in the classified multiple cases accompanying an increase or decrease in multiple temperature values ​​changes between cases A, C, and D. Also, "max(C)<T<max(D), min(D)<T(<TH)" in the item "Next Set Candidate Temperature Range" and "(1)max(C)>VP*(P)" in the item "Estimated Vapor Pressure (VP*) Judgment Formula" indicate a conditional formula that is determined to be true when the temperature at which the predicted vapor pressure of the substance becomes equal to the pressure in the first conditional set is smaller than the maximum temperature value in the first conditional set, which is case C, as a first conditional formula for the temperature range related to the second conditional set and the vapor pressure of the substance related to the reaction. Furthermore, "max(C)<T<max(D), min(D)<T(<TH)" in the item "Candidate temperature range for next set" and "(2) max(D)>VP*(P)" in the item "Estimated vapor pressure (VP*) judgment formula" indicate a conditional formula that is determined to be true when the temperature at which the predicted vapor pressure of the substance is equal to the pressure in the first conditional set is smaller than the maximum temperature value in the first conditional set, which is the case of D, as a second conditional formula for the temperature range in the second conditional set and the vapor pressure of the substance related to the reaction. If the first conditional expression and the second conditional expression are both false (if the items "Decision results (1) and (2)" are both "F"), the experimental conditions of the second set of conditions are set to be the same as those of the first set of conditions in terms of the mixing ratio and pressure of the processing gas, and the temperature range is set to be equal to or greater than the minimum temperature value of the first set of conditions, which is the case of D, and equal to or less than the temperature at which the predicted vapor pressure of the candidate molecule is equal to the pressure of the first set of conditions plus a user-specified margin temperature ("min(D)<T<=VP*(P)+Tm" in the item "Policy for generating the next set of experimental conditions").Furthermore, when the first conditional expression is true and the second conditional expression is false (when the item "Decision result (1) (2)" is "T" or "F"), the experimental conditions of the second conditional set are a condition in which the mixture ratio and temperature of the processing gas are equal to those of the first conditional set and the pressure is lower than that of the first conditional set, or a condition in which the mixture ratio of the processing gas is changed from that of the first conditional set and the temperature and pressure are equal to those of the first experimental conditions, or a condition in which the mixture ratio and pressure of the processing gas are the same as those of the first conditional set. The condition is that the temperature is equal to the first set of conditions and is equal to or less than the maximum temperature of the first set of conditions, which is the case of D, and is equal to or less than the minimum temperature of the first set of conditions, which is the case of C, or the mixing ratio and pressure of the processing gas are equal to the first set of conditions and are equal to or greater than the lower limit temperature of the search specified by the user and are equal to or less than the minimum temperature of the first set of conditions, which is the case of C (item "Policy for generating next set of experimental conditions" states "max(D)<T<min(C), or pressure drop, gas ratio change"). Furthermore, when the first conditional expression is false and the second conditional expression is true (when the item "Decision result (1) (2)" is "F" and "T"), the experimental conditions of the second set of conditions are set so that the mixing ratio and pressure of the processing gas are equal to those of the first set of conditions, and the temperature range is equal to or greater than the maximum temperature value of the first set of conditions, which is case C, and equal to or less than the maximum temperature value of the first set of conditions, which is case D (item "Policy for generating experimental conditions for the next set" states max(C)<T<=max(D)").Furthermore, when the first conditional expression is true and the second conditional expression is true (when both the items "Decision results (1) and (2)" are "T"), the experimental conditions of the second set of conditions are set as follows: the mixing ratio and temperature of the processing gas are equal to those of the first set of conditions and the pressure is lower than that of the first set of conditions; alternatively, the mixing ratio of the processing gas is changed from that of the first set of conditions and the temperature and pressure are equal to those of the first experimental conditions; or the mixing ratio and pressure of the processing gas are equal to those of the first set of conditions and the temperature range is equal to or greater than the maximum temperature value of the first set of conditions, which corresponds to case C, and equal to or less than the minimum temperature value of the first set of conditions, which corresponds to case D ("max(C)<T<min(D), or pressure reduction, gas ratio change" in the item "Policy for generating experimental conditions for the next set").

[0077] 9, for example, "A, C, E" in the item "Result State Pattern" indicates a case where the pattern of change in the classified cases accompanying an increase or decrease in the temperature values ​​changes between the case A, the case C, and the case E. Furthermore, "max(C)<T<min(E)" in the item "Next Set Candidate Temperature Range" and "max(C)>VP*(P)" in the item "Estimated Vapor Pressure (VP*) Judgment Formula" indicate a conditional formula for the temperature range related to the second condition set and the vapor pressure of the substance related to the reaction, which is determined to be true when the temperature at which the predicted vapor pressure of the substance becomes equal to the pressure in the first condition set is smaller than the maximum temperature value of the first condition set, which corresponds to the case C. Furthermore, if the judgment result of the conditional equation for the temperature range and the vapor pressure of the substance related to the reaction is false (if the item "Judgment result (1) (2)" is "F"), the experimental conditions of the second set of conditions are set so that the mixing ratio and pressure of the processing gas are equal to those of the first set of conditions, and the temperature range is set to a range equal to or greater than the maximum temperature of the first set of conditions, which is the case of C, and equal to or less than the temperature at which the predicted vapor pressure of the candidate molecule is equal to the pressure of the first set of conditions plus a user-specified margin temperature ("max(C)<T<VP*(P)+Tm or min(E)" in the item "Policy for generating experimental conditions for the next set"). Furthermore, if the judgment result of the conditional equation for the temperature range and the vapor pressure of the substance related to the reaction is true (if the item "Judgment result (1) (2)" is "T"), the experimental conditions of the second condition set are set to a condition in which the mixing ratio and temperature of the processing gas are equal to those of the first condition set and the pressure is lower than that of the first condition set, or a condition in which the mixing ratio of the processing gas is changed from that of the first condition set and the temperature and pressure are equal to those of the first experimental conditions ("Pressure reduction, gas ratio change" in the item "Policy for generating experimental conditions for the next set").

[0078] 9, for example, "A, D, E" in the item "Resulting State Pattern" indicates a case where the pattern of change in the classified multiple cases accompanying an increase or decrease in multiple temperature values ​​changes between cases A, D, and E. Furthermore, "max(A)<T<max(D), min(D)<Tmin(E)" in the item "Next Set Candidate Temperature Range" and "(1)max(A)>VP*(P)" in the item "Estimated Vapor Pressure (VP*) Judgment Formula" indicate a conditional formula that is determined to be true when the temperature at which the predicted vapor pressure of the substance becomes equal to the pressure in the first conditional set is smaller than the maximum temperature value in the first conditional set that becomes A, as a first conditional formula for the temperature range related to the second conditional set and the vapor pressure of the substance related to the reaction. Furthermore, "max(A)<T<max(D), min(D)<Tmin(E)" in the item "Candidate temperature range for next set" and "(2)max(D)>VP*(P)" in the item "Estimated vapor pressure (VP*) judgment formula" indicate a conditional formula that is determined to be true when the temperature at which the predicted vapor pressure of the substance is equal to the pressure in the first conditional set is smaller than the maximum temperature value in the first conditional set, which is the case of D, as a second conditional formula for the temperature range in the second conditional set and the vapor pressure of the substance related to the reaction. If the first conditional expression and the second conditional expression are both false (if the items "Decision results (1) and (2)" are both "F"), the experimental conditions of the second set of conditions are set to be the same as those of the first set of conditions in terms of the mixing ratio and pressure of the processing gas, and the temperature range is set to be equal to or greater than the minimum temperature value of the first set of conditions, which is the case of D, and equal to or less than the temperature at which the predicted vapor pressure of the candidate molecule is equal to the pressure of the first set of conditions plus a margin temperature specified by the user ("min(D)<T<=VP*(P)+Tm" in the item "Policy for generating experimental conditions for the next set").Furthermore, when the first conditional expression is true and the second conditional expression is false (when the item "Decision result (1) (2)" is "T" or "F"), the experimental conditions of the second conditional set are a condition in which the mixture ratio and temperature of the processing gas are equal to those of the first conditional set and the pressure is lower than that of the first conditional set, or a condition in which the mixture ratio of the processing gas is changed from that of the first conditional set and the temperature and pressure are equal to those of the first experimental conditions, or a condition in which the mixture ratio and pressure of the processing gas are the same as those of the first conditional set. The condition is that the temperature is equal to the first set of conditions, is equal to or less than the maximum temperature of the first set of conditions, which is the case of D, and is equal to or less than the minimum temperature of the first set of conditions, which is the case of A, or the mixing ratio and pressure of the processing gas are equal to the first set of conditions, are equal to or greater than the lower limit temperature of the user-specified search, and are equal to or less than the minimum temperature of the first set of conditions, which is the case of A (item "Policy for generating next set of experimental conditions" states "max(D)<T<min(A), or pressure drop, gas ratio change"). Furthermore, when the first conditional expression is false and the second conditional expression is true (when the item "Decision result (1) (2)" is "F" and "T"), the experimental conditions of the second set of conditions are set so that the mixing ratio and pressure of the processing gas are equal to those of the first set of conditions, and the temperature range is equal to or greater than the maximum temperature value in case A and equal to or less than the maximum temperature value in the first set of conditions in case D ("max(A) < T <= max(D)" in the item "Policy for generating experimental conditions for the next set"). Furthermore, when the first conditional expression is true and the second conditional expression is true (when the items "Decision results (1) and (2)" are both "T"), the experimental conditions of the second set of conditions are set as follows: the mixing ratio and temperature of the processing gas are equal to those of the first set of conditions and the pressure is lower than that of the first set of conditions; alternatively, the mixing ratio of the processing gas is changed from that of the first set of conditions and the temperature and pressure are equal to those of the first experimental conditions; or the mixing ratio and pressure of the processing gas are equal to those of the first set of conditions and the temperature range is equal to or greater than the maximum temperature value of the first set of conditions, which corresponds to case A, and equal to or less than the minimum temperature value of the first set of conditions, which corresponds to case D (the item "Policy for generating experimental conditions for the next set" includes "max(A)<T<min(D), or pressure reduction, gas ratio change").

[0079] 9, for example, "A, C, D, E" in the item "Resulting State Pattern" indicates a case where the pattern of change in the multiple cases classified above accompanying increases and decreases in multiple temperature values ​​varies between cases A, C, D, and E. Furthermore, "max(C)<T<max(D), min(D)<T<min(E)" in the item "Next Set Candidate Temperature Range" and "(1)max(C)>VP*(P)" in the item "Estimated Vapor Pressure (VP*) Judgment Formula" indicate a conditional formula that is determined to be true when the temperature at which the predicted vapor pressure of the substance becomes equal to the pressure in the first conditional set is smaller than the maximum temperature value in the first conditional set, which corresponds to case C, as a first conditional formula for the temperature range related to the second conditional set and the vapor pressure of the substance related to the reaction. Furthermore, "max(C)<T<max(D), min(D)<T<min(E)" in the item "Candidate temperature range for next set" and "(2) max(D)>VP*(P)" in the item "Estimated vapor pressure (VP*) judgment formula" indicate a conditional formula that is determined to be true when the temperature at which the predicted vapor pressure of the substance is equal to the pressure in the first conditional set is smaller than the maximum temperature value in the first conditional set, which is the case of D, as a second conditional formula for the temperature range in the second conditional set and the vapor pressure of the substance related to the reaction. If the first conditional expression and the second conditional expression are both false (if the item "Decision results (1) and (2) are both "F"), the experimental conditions of the second set of conditions are set to be experimental conditions in which the mixing ratio and pressure of the processing gas are equal to those of the first set of conditions, and the temperature range is equal to or greater than the minimum value of the temperature in the case of D and equal to or less than the temperature at which the predicted vapor pressure of the candidate molecule is equal to the pressure in the first set of conditions plus a margin temperature designated by the user ("min(D)<T<=VP*(P)+Tm" in the item "Policy for generating experimental conditions for the next set").Furthermore, when the first conditional expression is true and the second conditional expression is false (when the item "judgment results (1) and (2)" are "T" and "F"), the experimental conditions of the second conditional expression are the same as those of the first conditional expression, and the temperature is lower than that of the first conditional expression, or the mixing ratio of the processing gas is changed from that of the first conditional expression, and the temperature and pressure are equal to those of the first experimental conditions, or the mixing ratio and pressure of the processing gas are changed from those of the first conditional expression, and the temperature and pressure are equal to those of the first experimental conditions. The condition is that the temperature is equal to the first set of conditions, is equal to or less than the maximum temperature of the first set of conditions, which is the case of D, and is equal to or less than the minimum temperature of the first set of conditions, which is the case of C, or the mixing ratio and pressure of the processing gas are equal to the first set of conditions, are equal to or greater than the lower limit temperature of the search specified by the user, and are equal to or less than the minimum temperature of the first set of conditions, which is the case of C ("max(D)<T<min(C), or pressure drop, gas ratio change" in the item "Policy for generating experimental conditions for the next set"). Furthermore, when the first conditional expression is false and the second conditional expression is true (when the item "Decision results (1) (2) are 'F' and 'T'"), the experimental conditions of the second set of conditions are set to be the same as those of the first set of conditions in terms of the mixing ratio and pressure of the processing gas, and the temperature range is set to be equal to or greater than the maximum temperature value of the first set of conditions, which corresponds to case C, and equal to or less than the maximum temperature value of the first set of conditions, which corresponds to case D ("max(C)<T<=max(D)" in the item "Policy for generating experimental conditions for the next set").Furthermore, when the first conditional expression is true and the second conditional expression is true (when the item "Decision results (1) and (2) are both 'T'"), the experimental conditions of the second set of conditions are set as follows: the mixing ratio and temperature of the processing gas are equal to those of the first set of conditions and the pressure is lower than that of the first set of conditions; alternatively, the mixing ratio of the processing gas is changed from that of the first set of conditions and the temperature and pressure are equal to those of the first experimental conditions; or the mixing ratio and pressure of the processing gas are equal to those of the first set of conditions and the temperature range is equal to or greater than the maximum temperature value of the first set of conditions, which corresponds to case C, and equal to or less than the minimum temperature value of the first set of conditions, which corresponds to case D (item "Policy for generating experimental conditions for the next set" includes "max(C)<T<min(D), or pressure reduction, gas ratio change").

[0080] Although the example shown in Figure 9 has been used for the explanation, it is also possible to set a similar policy for generating the next set of experimental conditions for Figure 10, taking into account that the search lower limit temperature (T1) is higher than the hard lower limit temperature (TL).

[0081] [Start of Judgment Based on Estimated Physical Property Values] Process 251 in FIG. 6 will be specifically explained using FIG. 11. FIG. 11 is a processing flowchart based on the experimental condition setting policy table. The following processing is performed in process 503 in FIG. 11. Since one set is a collection of multiple experiments, a combination of experimental judgment types for that set is selected from the result state patterns in FIG. 9 and FIG. 10 that matches. The combination of experimental judgment types for a set does not depend on the order in which the experimental judgment types appear within the set. Excluding combinations that include type B and combinations in which all types A appear, the combination matches one of the seven combinations shown in FIG. 9 and FIG. 10.

[0082] In process 505, the information processing unit 50 extracts the estimated vapor pressure data from the data accumulated in process 237, calculates VP*(P), and applies the estimated vapor pressure (VP*) judgment formula to make a true / false judgment.

[0083] In process 507, the information processing unit 50 selects the corresponding policy described in the item of policy for generating the next set of experimental conditions according to the determination result, and sets it as the policy for generating the next set of experimental conditions.

[0084] Returning to the explanation of Fig. 6, in process 255, the information processing unit 50 sets the experimental conditions using the generation policy for the next set of experimental conditions.

[0085] The information processing unit 50 ends the generation of experiment conditions 205 .

[0086] Returning to the explanation of Fig. 4, after the end of the experimental condition generation 205, the information processing unit 50 executes the experiment and measurement starting from process 206 for a new set of experimental conditions (second condition set), and then determines the experiment judgment type for all experimental conditions in the new set by repeating the process from the start of judgment in process 216 to judgment 219, and then returns to the start of experimental condition generation 204. Thereafter, the process is repeatedly executed until the end state is reached, and the search is carried out.

[0087] 12 is a diagram illustrating symbols representing one set of search result states. While the search for etching conditions when the reaction temperature and the desorption temperature are the same is shown as an example, generality is not lost.

[0088] Explanations of the symbols are provided in legend 1002. TH and TL, indicated by black circles, represent the upper and lower limits of the search range, respectively, or the upper and lower temperature limits of the equipment constraints of the experimental equipment 5001 (hereinafter referred to as the "hardware upper temperature limit" and the "hardware lower temperature limit", respectively).

[0089] T2 and T1, indicated by white circles, are the upper and lower limit temperatures of one set of experimental conditions, respectively. max(X) and min(X) represent the maximum and minimum values ​​of the temperature range in the region with the same experimental determination type.

[0090] Legend 1003 shows a contradictory example where experiment judgment type X and experiment judgment type Y are connected at a single experiment point. The triangle indicates the experiment point. In this way, two different experiment judgment types never share a single experiment point.

[0091] Legend 1004 shows an example of the closest neighboring states for experiment decision type X and experiment decision type Y. There is no sharing of experiment points between sets of different experiment decision types. As shown in legend 1004, there is a minimum experiment spacing gap between the two different state regions.

[0092] Example 1 Search when the search lower limit temperature (T1) and the hard lower limit temperature (TL) are equal A generation policy for each experimental condition based on the decision table for the experimental condition setting policy shown in FIG. 9 will be described.

[0093] 13 is a diagram showing a state pattern 1012 and corresponding determination content 1014 when the combination of experimental determination types is A and C. This corresponds to item 1 in FIG. 9. The determination content 1014 illustrates the determination policy. The results are only two types: Type A, which shows no reaction up to the upper temperature limit of the search, and Type C, which shows surface adhesion but no film change.

[0094] Since the reactivity between the substrate surface and the gas increases with increasing temperature, the candidate search range for the next set is on the higher temperature side than the Type C region, i.e., on the higher temperature side than max(C). Furthermore, if the temperature VP*(P) estimated from the information on the deposits is lower than max(C), no decrease in film thickness is observed in the search up to the high temperature condition indicated by max(C), so the candidate experimental conditions for the next set should preferably be a decrease in operating pressure or a change in gas ratio. Conversely, if VP*(P) is higher than max(C), the candidate experimental conditions should preferably be in the range between max(C) and VP*(P) + Tm. Tm is the margin temperature 146 specified on the experimental planning setting screen (Figure 3).

[0095] If the temperature condition step value set in the auxiliary parameter 104 makes it impossible to set the experimental conditions within the range of the above-mentioned experimental condition candidates, the experimental condition candidate generation policy is changed to either lowering the operating pressure or changing the gas ratio.

[0096] FIG. 14 shows a state pattern 1022 and corresponding determination content 1024 when the combination of experimental determination types is A and E. This corresponds to item 3 in FIG. 9. The determination content 1024 illustrates the determination policy. The results are only two types: Type A, which is unreacted, and Type E, which is a deposited state, within the range up to the upper temperature limit of the search. In the deposited state (E) on the high temperature side, the deposit may be a heavier molecule than expected due to polymerization or may be an unexpected molecule. The candidate for the next set of search range is on the higher temperature side than max(A). Furthermore, if the temperature VP*(P) estimated from the deposit information is lower than max(A), it is highly likely that the deposit has a molecular weight equal to or greater than the upper molecular weight limit of 154 for the candidate molecule. The candidate for the next set of experimental conditions is preferably a reduction in the operating pressure or a change in the gas ratio. Conversely, when VP*(P) is higher than max(A), the range of the experimental conditions is preferably between max(A) and VP*(P)+Tm, or between max(A) and min(E). Tm is the margin temperature 146 specified on the experimental design setting screen (FIG. 3).

[0097] If the temperature condition step value set in the auxiliary parameter 104 makes it impossible to set the experimental conditions within the range of the above-mentioned experimental condition candidates, the experimental condition candidate generation policy is changed to a reduction in the operating pressure or a change in the gas ratio.

[0098] FIG. 15 shows the state pattern 1032 and the corresponding determination content 1034 when the combination of experimental determination types is A, C, and E. This corresponds to item 5 in FIG. 9. The determination content 103 illustrates the determination policy. The results are divided into three types: Type A, which shows no reaction within the range up to the upper temperature limit of the search; Type C, which shows surface adhesion but no film change; and Type E, which shows a deposited state. In the high-temperature deposited state (E), the deposits may be heavier than expected due to polymerization or other reasons, or may be unexpected molecules. In this case, the candidate for the next set of search range is higher than max(C). Furthermore, if the temperature VP*(P) estimated from the deposit information is lower than max(C), it is highly likely that the deposits have a molecular weight equal to or greater than the upper molecular weight limit of 154 for the candidate molecules. The candidate experimental conditions for the next set should preferably be a reduction in the operating pressure or a change in the gas ratio. Conversely, when VP*(P) is higher than max(C), the range of the experimental conditions is preferably between max(C) and VP*(P)+Tm, or between max(C) and min(E). Tm is the margin temperature 146 specified on the experimental design setting screen (FIG. 3).

[0099] If the experimental conditions cannot be set within the range of the above experimental condition candidates due to the temperature condition step value set in the auxiliary parameter 104, the experimental condition candidate generation policy is changed to a gas ratio change with a decrease in operating pressure.

[0100] FIG. 16 shows a state pattern 1042 and corresponding judgment content 1044 when the combination of experimental judgment types is A and D. This corresponds to item 2 in FIG. 9 . The judgment content 1044 illustrates the judgment policy. The results are two types: Type A, which shows no reaction up to the upper temperature limit of the search, and Type D, which shows surface adhesion and a decrease in film thickness. In this case, the search range for the next set is two regions: the range from max(A) to max(D), and the range above min(D). Furthermore, the relationship between the temperature VP*(P) estimated from the information on the adhesion and max(A) or max(D) establishes two judgment formulas: max(A)>VP*(P) and max(D)>VP*(P), and one of four conditions is determined by the combination of their true / false values.

[0101] In the case of (True, True), VP*(P) is lower than max(A), and T1, TL, and min(A) are equal, so it is not possible to search for lower temperature conditions. The range between max(A) and min(D) has not been searched. If the temperature difference between max(A) and min(D) is equal to or less than the minimum temperature increment specified by the auxiliary temperature parameter 104, it is desirable to reduce the operating pressure or change the gas ratio as candidate experimental conditions. If the temperature difference between max(A) and min(D) is greater than the minimum temperature increment, it is desirable to search for candidate experimental conditions between max(A) and min(D).

[0102] In the case of (true, false), VP*(P) is lower than max(A) and VP*(P) is higher than max(D). In this case, type D is on the low temperature side and type A is on the high temperature side. Since T1 is equal to TL, it is not possible to search for temperature conditions lower than this. The range from max(D) to min(A) has not been searched. If the temperature difference between max(D) and min(A) is equal to or less than the minimum temperature increment specified by the auxiliary temperature parameter 104, it is desirable to reduce the operating pressure or change the gas ratio as a candidate experimental condition. If the temperature difference between max(D) and min(A) is greater than the minimum temperature increment, it is desirable to select a candidate experimental condition between max(D) and min(A).

[0103] In the case of (false, true), it is desirable to be between max(A) and max(D).

[0104] In the case of (false, false), the range of min(D) and VP*(P)+Tm is desirable, where Tm is the margin temperature 146 designated on the experimental design setting screen (FIG. 3).

[0105] If the temperature condition step value set in the auxiliary parameter 104 makes it impossible to set the experimental conditions within the range of the above-mentioned experimental condition candidates, the experimental condition candidate generation policy is changed to a reduction in the operating pressure or a change in the gas ratio.

[0106] FIG. 17 shows a state pattern 1052 and corresponding determination content 1054 when the combination of experimental determination types is A, C, and D. This corresponds to item 4 in FIG. 9 . The determination content 1054 illustrates the determination policy. The results are three types: Type A, which shows no reaction within the range up to the upper temperature limit of the search; Type C, which shows surface adhesion but no film change; and Type D, which shows surface adhesion and a decrease in film thickness. In this case, the search range for the next set is two regions: the range from max(C) to max(D) and the range above min(D). Furthermore, the relationship between the temperature VP*(P) estimated from the adhesion information and max(C) or max(D) establishes two determination equations: max(C)>VP*(P) and max(D)>VP*(P), and one of four conditions is determined by the combination of their true / false values.

[0107] In the case of (True, True), VP*(P) is lower than max(C), and T1, TL, and min(A) are equal. The range between max(C) and min(D) has not been explored. If the temperature difference between max(C) and min(D) is equal to or less than the minimum temperature increment specified by the auxiliary temperature parameter 104, the candidate experimental conditions should be a reduction in the operating pressure or a change in the gas ratio. If the temperature difference between max(C) and min(D) is greater than the minimum temperature increment, the candidate experimental conditions should be between max(C) and min(D).

[0108] In the case of (true, false), VP*(P) is lower than max(C) and VP*(P) is higher than max(D). In this case, type D is on the low temperature side and type C is on the high temperature side. The area between max(D) and min(C) has not been explored. If the temperature difference between max(D) and min(C) is equal to or less than the minimum temperature increment specified by the auxiliary temperature parameter 104, the candidate experimental condition is preferably a change in the gas ratio by reducing the operating pressure. If the temperature difference between max(D) and min(C) is greater than the minimum temperature increment, the candidate experimental condition is preferably between max(D) and min(C).

[0109] In the case of (false, true), it is desirable to be between max(C) and max(D).

[0110] In the case of (false, false), the range of min(D) and VP*(P)+Tm is desirable, where Tm is the margin temperature 146 designated on the experimental design setting screen (FIG. 3).

[0111] If the temperature condition step value set in the auxiliary parameter 104 makes it impossible to set the experimental conditions within the range of the above-mentioned experimental condition candidates, the experimental condition candidate generation policy is changed to a reduction in the operating pressure or a change in the gas ratio.

[0112] FIG. 18 shows a state pattern 1062 and corresponding determination content 1064 when the combination of experimental determination types is A, D, and E. This corresponds to item 6 in FIG. 9. The determination content 1064 illustrates the determination policy. The results are three types: Type A, which shows no reaction within the range up to the upper temperature limit of the search; Type D, which shows surface adhesion and film thickness reduction; and Type E, which shows a deposition state. In this case, the search range for the next set is two regions: the range from max(A) to max(D) and the range above min(D). Furthermore, the relationship between the temperature VP*(P) estimated from the information on the adhesion and max(A) or max(D) establishes two determination equations: max(A)>VP*(P) and max(D)>VP*(P), and one of four conditions is determined by the combination of their true / false values.

[0113] In the case of (True, True), VP*(P) is lower than max(A), and T1, TL, and min(A) are equal, so it is not possible to search for lower temperature conditions. The range between max(A) and min(D) has not been searched. If the temperature difference between max(A) and min(D) is equal to or less than the minimum temperature increment specified by the auxiliary temperature parameter 104, it is desirable to reduce the operating pressure or change the gas ratio as candidate experimental conditions. If the temperature difference between max(A) and min(D) is greater than the minimum temperature increment, it is desirable to search for candidate experimental conditions between max(A) and min(D).

[0114] In the case of (true, false), VP*(P) is lower than max(A) and VP*(P) is higher than max(D). In this case, type D is on the low temperature side and type A is on the high temperature side. Since T1 is equal to TL, it is not possible to search for temperature conditions lower than this. The range from max(D) to min(A) has not been searched. If the temperature difference between max(D) and min(A) is equal to or less than the minimum temperature increment specified by the auxiliary temperature parameter 104, it is desirable to reduce the operating pressure or change the gas ratio as a candidate experimental condition. If the temperature difference between max(D) and min(A) is greater than the minimum temperature increment, it is desirable to select a candidate experimental condition between max(D) and min(A).

[0115] In the case of (false, true), it is desirable to be between max(A) and max(D).

[0116] In the case of (false, false), the range between min(D) and VP*(P)+Tm or the range between min(D) and min(E) is desirable. Tm is the margin temperature 146 specified on the experimental design setting screen (FIG. 3).

[0117] If the temperature condition step value set in the auxiliary parameter 104 makes it impossible to set the experimental conditions within the range of the above-mentioned experimental condition candidates, the experimental condition candidate generation policy is changed to a reduction in the operating pressure or a change in the gas ratio.

[0118] FIG. 19 shows a state pattern 1072 and corresponding determination content 1074 when the combination of experimental determination types is A, C, D, and E. This corresponds to item 7 in FIG. 9. The determination content 1074 illustrates the determination policy. The results are four types: Type A, which shows no reaction within the range up to the upper temperature limit of the search; Type C, which shows no film change; Type D, which shows surface adhesion and a decrease in film thickness; and Type E, which shows a deposition state. In this case, the search range for the next set is two regions: the range from max(C) to max(D) and the range above min(D). Furthermore, the relationship between the temperature VP*(P) estimated from the information on the adhesion and max(C) or max(D) establishes two determination equations: max(C)>VP*(P) and max(D)>VP*(P), and one of four conditions is determined by the combination of their true / false values.

[0119] In the case of (True, True), VP*(P) is lower than max(C), and T1, TL, and min(A) are equal. The range between max(C) and min(D) has not been explored. If the temperature difference between max(C) and min(D) is equal to or less than the minimum temperature increment specified by the auxiliary temperature parameter 104, the candidate experimental conditions should be a reduction in the operating pressure or a change in the gas ratio. If the temperature difference between max(C) and min(D) is greater than the minimum temperature increment, the candidate experimental conditions should be between max(C) and min(D).

[0120] In the case of (true, false), VP*(P) is lower than max(C) and VP*(P) is higher than max(D). In this case, type D is on the low temperature side and type C is on the high temperature side. The area between max(D) and min(C) has not been explored. If the temperature difference between max(D) and min(C) is equal to or less than the minimum temperature increment specified by the auxiliary temperature parameter 104, the candidate experimental conditions should be a reduction in the operating pressure or a change in the gas ratio. If the temperature difference between max(D) and min(C) is greater than the minimum temperature increment, the candidate experimental conditions should be between max(D) and min(C).

[0121] In the case of (false, true), it is desirable to be between max(C) and max(D).

[0122] In the case of (false, false), the range between min(D) and VP*(P)+Tm or the range between min(D) and min(E) is desirable. Tm is the margin temperature 146 specified on the experimental design setting screen (FIG. 3).

[0123] If the experimental conditions cannot be set within the range of the above candidate experimental conditions due to the temperature condition step value set in the auxiliary parameter 104, the conditions for generating the candidate experimental conditions are changed to a reduction in the operating pressure or a change in the gas ratio.

[0124] (Example 2) Search when the search lower limit temperature (T1) is higher than the hard lower limit temperature (TL) A description will now be given of the generation policy for each experimental condition based on the decision table for the experimental condition setting policy shown in FIG.

[0125] (When the combination of experimental determination types shown in FIG. 20 is AC) FIG. 20 is a diagram showing a state pattern 2012 and corresponding determination content 2014 when the combination of experimental determination types is A and C. The determination content 2014 illustrates the determination policy. min(A) is equal to T1 but higher than TL. Considering that the reaction between the surface and gas molecules becomes more active as the temperature increases, it is unlikely that an etching successful condition will appear in a search on the lower temperature side than T1. Therefore, the experimental condition candidates are similar to those in FIG. 13.

[0126] (When the combination of experimental determination types shown in FIG. 21 is AE) FIG. 21 is a diagram showing a state pattern 2022 and corresponding determination content 2024 when the combination of experimental determination types is A and E. The determination content 2024 illustrates the determination policy. min(A) is equal to T1 but higher than TL. Considering that the reaction between the surface and gas molecules becomes more active as the temperature increases, it is unlikely that an etching successful condition will appear in a search on the lower temperature side than T1. Therefore, the experimental condition candidates are similar to those in FIG. 14.

[0127] (When the combination of experimental determination types shown in FIG. 22 is ACE) FIG. 22 is a diagram showing a state pattern 2032 and corresponding determination contents 2034 when the combination of experimental determination types is A, C, and E. The determination contents 2034 show the determination policy. min(A) is equal to T1 but higher than TL. Considering that the reaction between the surface and gas molecules becomes more active as the temperature increases, it is unlikely that an etching successful condition will appear in a search on the lower temperature side than T1. Therefore, the experimental condition candidates are similar to those in FIG. 15.

[0128] (When the combination of experiment judgment types shown in FIG. 23 is AD) FIG. 23 shows a state pattern 2042 and corresponding judgment details 2044 when the combination of experiment judgment types is A and D. The judgment details 2044 illustrate the judgment method. When the two judgment equations max(A)>VP*(P) and max(D)>VP*(P) result in (true, false), VP*(P) is lower than max(A) and VP*(P) is higher than max(D). In this case, Type D is obtained on the low temperature side and Type A is obtained on the high temperature side. Since T1>TL, it is desirable that the candidate experimental conditions, including TL to min(D), be between TL and min(A). When the results of the two judgment equations max(A)>VP*(P) and max(D)>VP*(P) are (true, true), (false, true), or (false, false), the candidate experimental conditions are the same as those in FIG. 16.

[0129] (When the combination of experiment judgment types shown in Figure 24 is ACD) Figure 24 is a diagram showing a state pattern 2052 and corresponding judgment contents 2054 when the combination of experiment judgment types is A, C, and D. The judgment contents 2054 illustrate the judgment policy. When the two judgment equations max(C) > VP*(P) and max(D) > VP*(P) result in (true, false), VP*(P) is lower than max(C) and VP*(P) is higher than max(D). In this case, the low temperature side is type D and the high temperature side is type C. Since T1 > TL, it is desirable that the candidate experiment conditions including TL to min(D) be between TL and min(C). If the results of the two judgment equations max(C)>VP*(P) and max(D)>VP*(P) are (true, true), (false, true), or (false, false), the experimental condition candidates are the same as those in Figure 17.

[0130] (When the combination of experiment judgment types shown in Figure 25 is ADE) Figure 25 is a diagram showing a state pattern 2062 and corresponding judgment contents 2063 when the combination of experiment judgment types is A, D, and E. The judgment contents 2063 illustrate the judgment policy. When the two judgment equations max(A) > VP*(P) and max(D) > VP*(P) result in (true, false), VP*(P) is lower than max(A) and VP*(P) is higher than max(D). In this case, the low temperature side is type D and the high temperature side is type A. Since T1 > TL, it is desirable that the candidate experiment conditions including TL to min(D) be between TL and min(A). If the results of the two judgment equations max(A)>VP*(P) and max(D)>VP*(P) are (true, true), (false, true), (false, false), the experimental condition candidates are the same as those in Figure 18.

[0131] (When the combination of experiment judgment types shown in Figure 26 is ACDE) Figure 26 is a diagram showing a state pattern 2072 and corresponding judgment contents 2074 when the combination of experiment judgment types is A, C, D, and E. The judgment contents 2074 illustrate the judgment policy. When the two judgment equations max(C) > VP*(P) and max(D) > VP*(P) result in (true, false), VP*(P) is lower than max(C) and VP*(P) is higher than max(D). In this case, the low temperature side is type D and the high temperature side is type C. Since T1 > TL, it is desirable that the candidate experimental conditions including TL to min(D) be between TL and min(C). If the results of the two judgment equations max(C)>VP*(P) and max(D)>VP*(P) are (true, true), (false, true), or (false, false), the experimental condition candidates are the same as those in Figure 19.

[0132] (Example 3) In Examples 1 and 2, a search was performed based on the relationship between the search lower limit temperature (T1) and the hard lower limit temperature (TL), but in Example 3, a variation of the temperature parameter search method that takes into account the reaction temperature and desorption temperature will be described. Figure 27 is a diagram showing a variation of the temperature parameter search method. In the following description, components that are the same as or equivalent to those in Examples 1 and 2 described above will be assigned the same reference numerals, and their description will be simplified or omitted.

[0133] FIG. 27( a ) shows a case where temperature parameters are searched for by fixing the slope of change between the reaction temperature and desorption temperature. FIG. 27( b ) shows a case where temperature parameters are searched for by changing the slope of change between the reaction temperature and desorption temperature. FIG. 27( c ) shows a case where temperature parameters are searched for by changing the slope of change between the reaction temperature and desorption temperature and by changing the set of starting reaction temperature and desorption temperature. FIG. 27( d ) shows a case where temperature parameters are searched for by randomly sampling sets of reaction temperature and desorption temperature. FIG. 27( e ) shows a case where temperature parameters are searched for by changing the desorption temperature while keeping the reaction temperature constant. FIG. 27( f ) shows a case where temperature parameters are searched for by changing the reaction temperature while keeping the desorption temperature constant.

[0134] By varying the reaction temperature and desorption temperature according to a predetermined rule as shown in FIGS. 27(a) to 27(f), it becomes possible to efficiently search for temperature parameters.

[0135] Example 4 In Example 1, a case was described in which XPS was performed every time an experiment based on one set of multiple experimental conditions was performed (process 208a in FIG. 4 ), but in Example 4, a case in which the number of times XPS was performed is reduced will be described. In the following description, components that are the same as or equivalent to those in Examples 1 and 2 described above will be assigned the same reference numerals, and their description will be simplified or omitted.

[0136] 28 is a flowchart showing a search for etching process conditions when the number of XPS measurements is reduced. In FIG. 28, after experiments corresponding to a set of multiple experimental conditions are performed, XPS measurements are performed in XPS measurement unit 25 in XPS measurement 230, and the XPS measurement data is linked to the unique ID stored in information processing unit 50 and stored in data storage unit 57. On the other hand, in FIG. 28, no XPS measurement is performed in measurement 208b, and measurement data 220b does not contain any XPS measurement data.

[0137] By performing XPS measurement on the wafer 15 from which measurement data classified as type C and type E is acquired, it is possible to reduce the time required for analysis.

[0138] [Operations and Effects] As described above, according to the present disclosure, it is possible to efficiently search an experimental condition region including an optimal solution. For example, it is possible to provide an experimental approach for speeding up the search for new recipes.

[0139] Although the embodiments of the present invention have been described above, the present invention is not limited to the above-described embodiments, and various modifications are possible within the scope of the gist of the present invention.

[0140] The present invention is not limited to the following embodiments: (Aspect 1) A method for determining etching conditions for etching a film to be processed on a sample placed inside a container by supplying a predetermined processing gas into the container and maintaining the temperature of the sample and the pressure inside the container at predetermined values, wherein the results of the etching process performed using a first condition set including a plurality of values ​​of at least any of the temperature and pressure are classified into one of a plurality of cases according to changes in the amount of deposits and the film thickness, including case A where the amount of deposits is within an allowable range and the decrease in the film thickness is less than a predetermined first threshold, case B where the amount of deposits is within the allowable range and the decrease in the film thickness is equal to or greater than the predetermined threshold, case C where the amount of deposits is outside the allowable range and the increase or decrease in the film thickness is less than a second threshold, case D where the amount of deposits is outside the allowable range and the film thickness decreases, and case E where the amount of deposits is outside the allowable range and the film thickness increases to or greater than the second threshold, and a candidate reaction involving the material of the film to be processed in the etching process is selected; an etching condition determination method for calculating a second set of conditions including the temperature and pressure ranges where the result of the etching process by the reaction of the selected candidate reaction is likely to be case B, in accordance with a pattern of change in the classified cases accompanying increases or decreases in at least any of the temperature and pressure values, when the classification result includes case B, and determining the process gas and temperature values ​​corresponding to case B as the process conditions for the film to be processed when the classification result does not include case B. (Aspect 2) The etching condition determination method according to Aspect 1, wherein the candidate reaction is selected based on a result of detecting light or a product from the surface of the sample during the etching process. (Aspect 3) The etching condition determination method according to Aspect 1 or Aspect 2, wherein, when the classification result includes case B, for the result of the etching process performed at temperatures of a plurality of values ​​selected from the temperature range of the second condition set, the process gas and temperature values ​​corresponding to case B are determined as the process conditions for the film to be processed when the classification result includes case B, andA method for determining etching conditions, which, when Case B is not included, calculates, in accordance with a pattern of change in the plurality of cases obtained by performing the classification, a range of the temperature and pressure conditions within which the result of the etching process due to the reaction may become Case B. (Aspect 4) A method for determining etching conditions according to any one of Aspects 1 to 3, wherein, when Case B is included in the classification result of the etching process performed at a plurality of pressure values ​​selected from the temperature range of the second condition set, the process gas and temperature values ​​corresponding to Case B are determined to be the process conditions for the film to be processed, and when Case B is not included, calculates, in accordance with a pattern of change in the plurality of cases obtained by performing the classification, a third range of the temperature and pressure conditions within which the result of the etching process due to the reaction may become Case B. (Aspect 5) The method for determining etching conditions according to any one of Aspects 1 to 4, wherein the pressure value according to the second set of conditions is set lower than the pressure value according to the first set of conditions when the classification obtained for the results of the etching process using the first set of conditions does not include Case B. (Aspect 6) The method for determining etching conditions according to any one of Aspects 1 to 5, wherein the temperature and pressure ranges of the second set of conditions include ranges that are equal to or higher than the saturated vapor pressure of a substance associated with the candidate reaction. (Aspect 7) The method for determining etching conditions according to any one of Aspects 1 to 6, wherein, when the classification result obtained for the result of the etching process using the first condition set does not include Case B, the method calculates the temperature and pressure ranges of the second condition set according to a result of determining a conditional expression for the temperature range and a conditional expression for the vapor pressure of a substance related to the reaction for each of change patterns of the classified cases accompanying increases and decreases in the temperature values. (Aspect 8) The method for determining etching conditions according to any one of Aspects 1 to 7,A method for determining etching conditions, comprising: creating at least one candidate molecular structure including at least one molecular partial structure included in candidate atomic structures constituting the product during the etching process and bonding information of elements constituting the candidate product, obtained using the light from the surface of the sample during the etching process, from among a plurality of element combinations obtained from information indicating a film structure disposed on the surface of the sample including the film to be processed and the types of substances constituting the processing gas or their compositions; and selecting, from the candidate molecular structures, a candidate reaction including a molecular structure having a predetermined molecular weight upper limit or less. (Aspect 9) The method for determining etching conditions according to any one of Aspects 1 to 8, wherein the molecular structures having a predetermined molecular weight upper limit or less are registered in a database. (Aspect 10) A method for determining etching conditions according to any one of Aspects 1 to 9, wherein, when a pattern of change in the classified cases accompanying an increase or decrease in the temperature values ​​changes between Case A and Case C, the conditional expression for the temperature range and the vapor pressure of the substance related to the second set of conditions is a conditional expression that is determined to be true when the temperature at which the predicted vapor pressure of the substance becomes equal to the pressure of the first set of conditions is smaller than the maximum temperature value of the first set of conditions that results in Case C, and when the conditional expression for the temperature range and the vapor pressure of the substance related to the reaction is false, the experimental conditions for the second set of conditions are: a mixing ratio and pressure of the process gas are equal to those of the first set of conditions, and a temperature range that is equal to or greater than the maximum temperature value of the first set of conditions that results in Case C and is equal to or less than the temperature at which the predicted vapor pressure of the candidate molecule becomes equal to the pressure of the first set of conditions plus a user-specified margin temperature, and when the determination result for the temperature range and the conditional expression for the vapor pressure of the substance related to the reaction is true, the experimental conditions for the second set of conditions are: A method for determining etching conditions, wherein the processing gas mixture ratio and temperature are the same as those in the first set of conditions, but the pressure is lower than that in the first set of conditions, or the processing gas mixture ratio is changed from that in the first set of conditions, but the temperature and pressure are the same as those in the first experimental conditions (Aspect 11).A method for determining etching conditions according to any one of aspects 1 to 10, wherein, when a pattern of change in the classified cases accompanying an increase or decrease in the plurality of temperature values ​​changes between case A and case D, a first conditional expression for the temperature range and the vapor pressure of the substance related to the second set of conditions is a conditional expression that is determined to be true when the temperature at which the predicted vapor pressure of the substance becomes equal to the pressure of the first set of conditions is smaller than the maximum temperature value of the first set of conditions, which corresponds to case A, and a second conditional expression for the temperature range and the vapor pressure of the substance related to the second set of conditions is a conditional expression that is determined to be true when the temperature at which the predicted vapor pressure of the substance becomes equal to the pressure of the first set of conditions is smaller than the maximum temperature value of the first set of conditions, which corresponds to case C, and when both the first conditional expression and the second conditional expression are false, As the experimental conditions of the second condition set, the mixing ratio and pressure of the processing gas are the same as those of the first condition set, and the temperature range is equal to or greater than the minimum temperature of the first condition set, which corresponds to case D, and equal to or less than the temperature at which the predicted vapor pressure of the candidate molecule is equal to the pressure of the first condition set plus a user-specified margin temperature; if the first conditional expression is true and the second conditional expression is false, as the experimental conditions of the second condition set, the mixing ratio and temperature of the processing gas are equal to those of the first condition set, and the pressure is lower than that of the first conditional set; or the mixing ratio of the processing gas is changed from that of the first conditional set, and the temperature and pressure are equal to those of the first experimental conditions; or the mixing ratio and pressure of the processing gas are equal to those of the first conditional set, and are equal to or less than the maximum temperature of the first conditional set, which corresponds to case D, and are equal to or less than the minimum temperature of the first conditional set, which corresponds to case A; Alternatively, the mixing ratio and pressure of the processing gas are equal to those of the first set of conditions, and the temperature is equal to or higher than the lower limit temperature of the search specified by the user and equal to or lower than the minimum value of the temperature of the first set of conditions, which is the case of A. If the first conditional expression is false and the second conditional expression is true,the experimental conditions for the second set of conditions are set as follows: the mixing ratio and pressure of the processing gas are equal to those of the first set of conditions, and the temperature range is equal to or greater than the maximum temperature value of the first set of conditions, which is the case of A, and equal to or less than the maximum temperature value of the first set of conditions, which is the case of D; and when the first conditional expression is true and the second conditional expression is true, the experimental conditions for the second set of conditions are set as follows: the mixing ratio and temperature of the processing gas are equal to those of the first set of conditions, and the pressure is lower than that of the first set of conditions; or the mixing ratio of the processing gas is changed from that of the first set of conditions, and the temperature and pressure are equal to those of the first experimental conditions; or the mixing ratio and pressure of the processing gas are equal to those of the first set of conditions, and the temperature range is equal to or greater than the maximum temperature value of the first set of conditions, which is the case of A, and equal to or less than the minimum temperature value of the first set of conditions, which is the case of D. (Aspect 12) A method for determining etching conditions according to any one of Aspects 1 to 11, wherein, when a pattern of change in the classified cases accompanying an increase or decrease in the temperature values ​​changes between Case A and Case E, the conditional expression for the temperature range and the vapor pressure of the substance related to the second set of conditions is a conditional expression that is determined to be true when the temperature at which the predicted vapor pressure of the substance becomes equal to the pressure of the first set of conditions is smaller than the maximum temperature value of the first set of conditions that results in Case A, and when the determination result for the temperature range and the conditional expression for the vapor pressure of the substance related to the reaction is false, the experimental conditions for the second set of conditions are: the mixing ratio and pressure of the processing gas are equal to those of the first set of conditions, and the temperature range is a range that is equal to or greater than the maximum temperature value of the first set of conditions that results in Case A and is equal to or less than the temperature at which the predicted vapor pressure of the candidate molecule becomes equal to the pressure of the first set of conditions plus a user-specified margin temperature, and when the determination result for the temperature range and the conditional expression for the vapor pressure of the substance related to the reaction is true, The experimental conditions of the second set of conditions are: a mixing ratio and a temperature of the processing gas are equal to those of the first set of conditions, and the pressure is lower than that of the first set of conditions;Alternatively, the etching condition determination method may be such that the mixture ratio of the processing gas is changed from that of the first set of conditions, and the temperature and pressure are set to be equal to those of the first experimental conditions. (Aspect 13) A method for determining etching conditions according to any one of Aspects 1 to 12, wherein, when a pattern of change in the classified cases accompanying an increase or decrease in the plurality of values ​​of the temperature changes between Case A, Case C, and Case D, a first conditional expression for the temperature range and the vapor pressure of the substance related to the second set of conditions is a conditional expression that is determined to be true when the temperature at which the predicted vapor pressure of the substance becomes equal to the pressure of the first set of conditions is smaller than the maximum temperature value of the first set of conditions, which results in Case C, and a second conditional expression for the temperature range and the vapor pressure of the substance related to the second set of conditions is a conditional expression that is determined to be true when the temperature at which the predicted vapor pressure of the substance becomes equal to the pressure of the first set of conditions is smaller than the maximum temperature value of the first set of conditions, which results in Case D, and when both the first conditional expression and the second conditional expression are false, The experimental conditions for the second condition set are set as experimental conditions in which the mixing ratio and pressure of the processing gas are equal to those of the first condition set, and the temperature range is equal to or greater than the minimum temperature of the first condition set, which corresponds to case D, and equal to or less than the temperature at which the predicted vapor pressure of the candidate molecule is equal to the pressure of the first condition set plus a user-specified margin temperature; if the first conditional expression is true and the second conditional expression is false, the experimental conditions for the second condition set are set as follows: the mixing ratio and temperature of the processing gas are equal to those of the first condition set, and the pressure is lower than that of the first condition set; or the mixing ratio of the processing gas is changed from that of the first condition set, and the temperature and pressure are equal to those of the first experimental conditions; or the mixing ratio and pressure of the processing gas are equal to those of the first condition set, and are equal to or less than the maximum temperature of the first condition set, which corresponds to case D, and equal to or less than the minimum temperature of the first condition set, which corresponds to case C; Alternatively, the mixing ratio and pressure of the processing gas are equal to those of the first set of conditions, and the temperature is equal to or higher than the lower limit temperature of the search specified by the user and equal to or lower than the minimum value of the temperature of the first set of conditions, which is the case C;a temperature range equal to or greater than the maximum temperature value of the first condition set, which corresponds to case C, and equal to or less than the maximum temperature value of the first condition set, which corresponds to case D; and a temperature range equal to or greater than the maximum temperature value of the first condition set, which corresponds to case D, which corresponds to case C. If the first conditional expression is true and the second conditional expression is true, the experimental conditions for the second condition set are set as follows: a mixing ratio and temperature of the processing gas equal to that of the first condition set, and a pressure lower than that of the first condition set; or a mixing ratio of the processing gas is changed from that of the first condition set, and the temperature and pressure are equal to those of the first experimental conditions; or a mixing ratio and pressure of the processing gas equal to that of the first condition set, and a temperature range equal to or greater than the maximum temperature value of the first condition set, which corresponds to case C, and equal to or less than the minimum temperature value of the first condition set, which corresponds to case D. (Aspect 14) A method for determining etching conditions according to any one of Aspects 1 to 13, wherein, when a pattern of change in the classified cases accompanying an increase or decrease in the plurality of temperature values ​​varies between Case A, Case C, and Case E, the temperature range related to the second set of conditions and the conditional expression for the vapor pressure of the substance related to the reaction are a conditional expression that is determined to be true when the temperature at which the predicted vapor pressure of the substance becomes equal to the pressure of the first set of conditions is smaller than the maximum temperature value of the first set of conditions that corresponds to Case C, and when the determination result of the conditional expression for the temperature range and the vapor pressure of the substance related to the reaction is false, the experimental conditions for the second set of conditions are set so that the mixing ratio and pressure of the processing gas are equal to those of the first set of conditions, and the temperature range is equal to or greater than the maximum temperature value of the first set of conditions that corresponds to Case C and equal to or less than the temperature at which the predicted vapor pressure of the candidate molecule becomes equal to the pressure of the first set of conditions plus a user-specified margin temperature, and when the determination result of the temperature range and the conditional expression for the vapor pressure of the substance related to the reaction is true, The experimental conditions of the second set of conditions are: a mixing ratio and a temperature of the processing gas are equal to those of the first set of conditions, and the pressure is lower than that of the first set of conditions;Alternatively, the etching condition determination method may be such that the mixture ratio of the processing gas is changed from that of the first set of conditions, and the temperature and pressure are set to be equal to those of the first experimental conditions. (Aspect 15) A method for determining etching conditions according to any one of Aspects 1 to 14, wherein, when a pattern of change in the classified cases accompanying an increase or decrease in the plurality of values ​​of the temperature changes between Case A, Case D, and Case E, a first conditional expression for the temperature range and the vapor pressure of the substance related to the second set of conditions is a conditional expression that is determined to be true when the temperature at which the predicted vapor pressure of the substance becomes equal to the pressure of the first set of conditions is smaller than the maximum temperature value of the first set of conditions that results in Case A, and a second conditional expression for the temperature range and the vapor pressure of the substance related to the second set of conditions is a conditional expression that is determined to be true when the temperature at which the predicted vapor pressure of the substance becomes equal to the pressure of the first set of conditions is smaller than the maximum temperature value of the first set of conditions that results in Case D, and when both the first conditional expression and the second conditional expression are false, The experimental conditions for the second condition set are set as experimental conditions in which the mixing ratio and pressure of the processing gas are equal to those of the first condition set, and the temperature range is equal to or greater than the minimum temperature of the first condition set, which corresponds to case D, and equal to or less than the temperature at which the predicted vapor pressure of the candidate molecule is equal to the pressure of the first condition set plus a user-specified margin temperature; if the first conditional expression is true and the second conditional expression is false, the experimental conditions for the second condition set are set as follows: the mixing ratio and temperature of the processing gas are equal to those of the first condition set, and the pressure is lower than that of the first conditional expression; or the mixing ratio of the processing gas is changed from that of the first conditional expression, and the temperature and pressure are equal to those of the first experimental conditions; or the mixing ratio and pressure of the processing gas are equal to those of the first conditional expression, and are equal to or less than the maximum temperature of the first conditional expression, which corresponds to case D, and equal to or less than the minimum temperature of the first conditional expression, which corresponds to case A; Alternatively, the mixing ratio and pressure of the processing gas are equal to those of the first set of conditions, and the temperature is equal to or higher than the lower limit temperature of the search specified by the user and equal to or lower than the minimum value of the temperature of the first set of conditions, which is the case of A;a temperature range equal to or greater than the maximum temperature of the first condition set, which corresponds to case A, and equal to or less than the maximum temperature of the first condition set, which corresponds to case D; and a temperature range equal to or greater than the maximum temperature of the first condition set, which corresponds to case D, which corresponds to case D. If the first conditional expression is true and the second conditional expression is true, the experimental conditions for the second conditional expression are set as follows: a mixing ratio and a temperature of the processing gas equal to or greater than the first conditional expression, and a pressure lower than that of the first conditional expression; or a mixing ratio of the processing gas is changed from that of the first conditional expression, and the temperature and pressure are equal to the first experimental conditions; or a mixing ratio and a pressure of the processing gas equal to or greater than the first conditional expression, and a temperature range equal to or greater than the maximum temperature of the first conditional expression, which corresponds to case A, and equal to or less than the minimum temperature of the first conditional expression. (Aspect 16) A method for determining etching conditions according to any one of Aspects 1 to 15, wherein, when a pattern of change in the classified cases accompanying an increase or decrease in the plurality of values ​​of the temperature changes between Case A, Case C, Case D, and Case E, a first conditional expression for the temperature range and the vapor pressure of the substance related to the second set of conditions is a conditional expression that is determined to be true when the temperature at which the predicted vapor pressure of the substance becomes equal to the pressure of the first set of conditions is smaller than the maximum temperature value of the first set of conditions, which results in Case C, and a second conditional expression for the temperature range and the vapor pressure of the substance related to the second set of conditions is a conditional expression that is determined to be true when the temperature at which the predicted vapor pressure of the substance becomes equal to the pressure of the first set of conditions is smaller than the maximum temperature value of the first set of conditions, which results in Case D, and when both the first conditional expression and the second conditional expression are false, As the experimental conditions of the second condition set, the mixing ratio and pressure of the processing gas are equal to those of the first condition set, and the temperature range is equal to or greater than the minimum value of the temperature in the case of D and equal to or less than the temperature at which the predicted vapor pressure of the candidate molecule is equal to the pressure of the first condition set plus a margin temperature designated by the user, and if the first condition formula is true and the second condition formula is false,The experimental conditions of the second condition set are: a condition in which the mixing ratio and temperature of the processing gas are equal to those of the first condition set and the pressure is lower than that of the first condition set; or a condition in which the mixing ratio of the processing gas is changed from that of the first condition set and the temperature and pressure are equal to those of the first experimental conditions; or a condition in which the mixing ratio and pressure of the processing gas are equal to those of the first condition set and are equal to or lower than the maximum temperature of the first condition set, which is the case of D, and are equal to or lower than the minimum temperature of the first condition set, which is the case of C; or a condition in which the mixing ratio and pressure of the processing gas are equal to those of the first condition set and are equal to or higher than the lower limit temperature of a user-specified search and are equal to or lower than the minimum temperature of the first condition set, which is the case of C; and if the first condition expression is false and the second condition expression is true, The method for determining etching conditions, wherein the experimental conditions for the second set of conditions are set such that the mixing ratio and pressure of the processing gas are equal to those of the first set of conditions, and the temperature range is equal to or greater than the maximum temperature value of the first set of conditions, which corresponds to case C, and equal to or less than the maximum temperature value of the first set of conditions, which corresponds to case D; and when the first conditional expression is true and the second conditional expression is true, the experimental conditions for the second set of conditions are set such that the mixing ratio and temperature of the processing gas are equal to those of the first set of conditions, and the pressure is lower than that of the first set of conditions; or the mixing ratio of the processing gas is changed from that of the first set of conditions, and the temperature and pressure are equal to those of the first experimental conditions; or the mixing ratio and pressure of the processing gas are equal to those of the first set of conditions, and the temperature range is equal to or greater than the maximum temperature value of the first set of conditions, which corresponds to case C, and equal to or less than the minimum temperature value of the first set of conditions, which corresponds to case D. (Aspect 17) A system for determining etching conditions for etching a film to be processed on a sample placed inside a container by supplying a predetermined processing gas into the container and maintaining the temperature of the sample and the pressure inside the container at predetermined values, the system comprising:a first condition set including a plurality of values ​​of at least any of the temperature and pressure, and classifying the results of the etching process into one of a plurality of cases according to changes in the amount of deposits and the film thickness, including case A where the amount of deposits is within an allowable range and the decrease in the film thickness is smaller than a predetermined first threshold, case B where the amount of deposits is within the allowable range and the decrease in the film thickness is equal to or greater than the predetermined threshold, case C where the amount of deposits is outside the allowable range and the increase or decrease in the film thickness is smaller than a second threshold, case D where the amount of deposits is outside the allowable range and the film thickness decreases, and case E where the amount of deposits is outside the allowable range and the film thickness increases to or greater than the second threshold, and selecting candidates for a reaction including the material of the film to be processed in the etching process; and if the result of the classification includes case B, determining the values ​​of the processing gas and temperature corresponding to case B as the processing conditions for the film to be processed; an etching condition determination system that, when the classification results do not include case B, calculates a second set of conditions including the temperature and pressure ranges with which the result of the etching process due to the reaction of the selected candidate reaction may result in case B, in accordance with a pattern of change in the classified cases accompanying an increase or decrease in at least any of the temperature and pressure values. (Aspect 18) The etching condition determination system of Aspect 17, wherein the candidate reaction is selected based on a result of detecting light or a product from the surface of the sample during the etching process. (Aspect 19) The etching condition determination system of Aspect 17 or Aspect 18, wherein, when the classification results include case B, for the result of the etching process performed at a plurality of temperatures selected from the temperature range of the second condition set, the system determines the process gas and temperature values ​​corresponding to case B as process conditions for the film to be processed, and when case B is not included, further calculates the temperature and pressure ranges with which the result of the etching process due to the reaction may result in case B, in accordance with a pattern of change in the classified cases obtained by performing the classification. (Aspect 20)The etching condition determination system according to any one of Aspects 17 to 19, wherein, when the classification result for the result of the etching process performed at the pressures of a plurality of values ​​selected from the temperature range of the second set of conditions includes Case B, the system determines the gas and temperature values ​​corresponding to Case B as the process conditions for the film to be processed, and when Case B is not included, calculates a third range of conditions for the temperature and pressure within which the result of the etching process due to the reaction may become Case B, in accordance with a pattern of change in the plurality of cases obtained by performing the classification. (Aspect 21) The etching condition determination system according to any one of Aspects 17 to 20, wherein, when Case B is not included in the classification obtained for the result of the etching process using the first set of conditions, the system reduces the pressure value associated with the second set of conditions to be lower than the pressure value associated with the first conditions. (Aspect 22) The etching condition determination system according to any one of Aspects 17 to 21, wherein the temperature and pressure ranges of the second set of conditions include a range that is equal to or greater than the saturated vapor pressure of the substance associated with the candidate reaction. (Aspect 23) The etching condition determination system according to any one of Aspects 17 to 22, wherein, when the classification result obtained for the result of the etching process using the first set of conditions does not include Case B, the etching condition determination system calculates the temperature and pressure ranges of the second set of conditions in accordance with a result of determining a conditional expression for the temperature range of the second set of conditions and a conditional expression for the vapor pressure of the substance associated with the reaction for each of change patterns of the classified cases accompanying increases and decreases in the temperature values. (Aspect 24) The etching condition determination system according to any one of Aspects 17 to 23, whereina molecular structure candidate that includes at least one molecular partial structure included in atomic candidate components constituting the product during the processing and bonding information of elements constituting the candidate product, the atomic candidate components being obtained using the light from the surface of the sample during the processing, from among a plurality of element combinations obtained from information indicating a film structure disposed on the surface of the sample including the film to be processed and the types of substances constituting the processing gas or their compositions, and selects a candidate for the reaction from the candidate molecular structure candidates that includes a molecular structure having a predetermined molecular weight not greater than an upper limit value. (Aspect 25) The etching condition determination system according to any one of Aspects 17 to 24, wherein the molecular structure having a molecular weight not greater than the predetermined upper limit value is registered in a database. (Aspect 26) In the etching condition determination system according to any one of Aspects 17 to 25, when a pattern of change in the classified cases accompanying an increase or decrease in the temperature values ​​changes between Case A and Case C, the conditional expression for the temperature range and the vapor pressure of the substance related to the second set of conditions is a conditional expression that is determined to be true when the temperature at which the predicted vapor pressure of the substance becomes equal to the pressure of the first set of conditions is smaller than the maximum temperature value of the first set of conditions that results in Case C, and when the conditional expression for the temperature range and the vapor pressure of the substance related to the reaction is false, the experimental conditions for the second set of conditions are: the mixing ratio and pressure of the processing gas are equal to those of the first set of conditions, and the temperature range is a range that is equal to or greater than the maximum temperature value of the first set of conditions that results in Case C and is equal to or less than the temperature at which the predicted vapor pressure of the candidate molecule becomes equal to the pressure of the first set of conditions plus a user-specified margin temperature, and when the determination result for the temperature range and the conditional expression for the vapor pressure of the substance related to the reaction is true, The etching condition determination system sets, as the experimental conditions of the second condition set, the mixing ratio and temperature of the processing gas equal to those of the first condition set and the pressure lower than those of the first condition set, or the mixing ratio of the processing gas changed from that of the first condition set and the temperature and pressure equal to those of the first experimental conditions (Aspect 27).A system for determining etching conditions according to any one of Aspects 17 to 26, wherein, when a pattern of change in the classified cases accompanying an increase or decrease in the plurality of values ​​of the temperature changes between Case A and Case D, a first conditional expression for the temperature range and the vapor pressure of the substance related to the second set of conditions is a conditional expression that is determined to be true when the temperature at which the predicted vapor pressure of the substance becomes equal to the pressure of the first set of conditions is smaller than the maximum temperature value of the first set of conditions that results in Case A, and a second conditional expression for the temperature range and the vapor pressure of the substance related to the second set of conditions is a conditional expression that is determined to be true when the temperature at which the predicted vapor pressure of the substance becomes equal to the pressure of the first set of conditions is smaller than the maximum temperature value of the first set of conditions that results in Case C, and when both the first conditional expression and the second conditional expression are false, As the experimental conditions of the second condition set, the mixing ratio and pressure of the processing gas are the same as those of the first condition set, and the temperature range is equal to or greater than the minimum temperature of the first condition set which results in D and equal to or less than the temperature at which the predicted vapor pressure of the candidate molecule is equal to the pressure of the first condition set plus a user-specified margin temperature; if the first conditional expression is true and the second conditional expression is false, as the experimental conditions of the second condition set, the mixing ratio and temperature of the processing gas are equal to those of the first condition set and the pressure is lower than that of the first conditional set, or the mixing ratio of the processing gas is changed from that of the first conditional set and the temperature and pressure are equal to those of the first experimental conditions, or the mixing ratio and pressure of the processing gas are equal to those of the first conditional set and are equal to or less than the maximum temperature of the first conditional set which results in D and equal to or less than the minimum temperature of the first conditional set which results in A, Alternatively, the mixing ratio and pressure of the processing gas are equal to those of the first set of conditions, and the temperature is equal to or higher than the lower limit temperature of the search specified by the user and equal to or lower than the minimum value of the temperature of the first set of conditions that becomes A. If the first conditional expression is false and the second conditional expression is true,the experimental conditions for the second set of conditions are set as follows: the mixing ratio and pressure of the processing gas are equal to those of the first set of conditions, and the temperature range is equal to or greater than the maximum temperature value of the first set of conditions, which is the case of A, and equal to or less than the maximum temperature value of the first set of conditions, which is the case of D; and when the first conditional expression is true and the second conditional expression is true, the experimental conditions for the second set of conditions are set as follows: the mixing ratio and temperature of the processing gas are equal to those of the first set of conditions, and the pressure is lower than that of the first set of conditions; or the mixing ratio of the processing gas is changed from that of the first set of conditions, and the temperature and pressure are equal to those of the first experimental conditions; or the mixing ratio and pressure of the processing gas are equal to those of the first set of conditions, and the temperature range is equal to or greater than the maximum temperature value of the first set of conditions, which is the case of A, and equal to or less than the minimum temperature value of the first set of conditions, which is the case of D. (Aspect 28) In the etching condition determination system according to any one of Aspects 17 to 27, when a pattern of change in the classified cases accompanying an increase or decrease in the temperature values ​​changes between Case A and Case E, the temperature range related to the second set of conditions and the conditional expression for the vapor pressure of the substance related to the reaction are a conditional expression that is determined to be true when the temperature at which the predicted vapor pressure of the substance becomes equal to the pressure of the first set of conditions is smaller than the maximum temperature value of the first set of conditions that results in Case A, and when the determination result of the temperature range and the conditional expression for the vapor pressure of the substance related to the reaction is false, the experimental conditions for the second set of conditions are: the mixing ratio and pressure of the processing gas are equal to those of the first set of conditions, and the temperature range is a range that is equal to or greater than the maximum temperature value of the first set of conditions that results in Case A and is equal to or less than the temperature at which the predicted vapor pressure of the candidate molecule becomes equal to the pressure of the first set of conditions plus a user-specified margin temperature, and when the determination result of the temperature range and the conditional expression for the vapor pressure of the substance related to the reaction is true, The experimental conditions of the second set of conditions are: a mixing ratio and a temperature of the processing gas are equal to those of the first set of conditions, and the pressure is lower than that of the first set of conditions;Alternatively, the etching condition determination system changes the mixture ratio of the processing gas from the first set of conditions, and sets the temperature and pressure to the same conditions as the first experimental conditions. (Aspect 29) The etching condition determination system according to any one of Aspects 17 to 28, wherein, when a pattern of change in the classified cases accompanying an increase or decrease in the plurality of temperature values ​​changes between Case A, Case C, and Case D, a first conditional expression for the temperature range and the vapor pressure of the substance related to the second condition set is a conditional expression that is determined to be true when the temperature at which the predicted vapor pressure of the substance becomes equal to the pressure of the first condition set is smaller than the maximum temperature value of the first condition set that results in Case C, and a second conditional expression for the temperature range and the vapor pressure of the substance related to the second condition set is a conditional expression that is determined to be true when the temperature at which the predicted vapor pressure of the substance becomes equal to the pressure of the first condition set is smaller than the maximum temperature value of the first condition set that results in Case D, and when both the first conditional expression and the second conditional expression are false, The experimental conditions for the second condition set are set as experimental conditions in which the mixing ratio and pressure of the processing gas are equal to those of the first condition set, and the temperature range is equal to or greater than the minimum temperature of the first condition set, which results in case D, and equal to or less than the temperature at which the predicted vapor pressure of the candidate molecule is equal to the pressure of the first condition set plus a user-specified margin temperature; if the first conditional expression is true and the second conditional expression is false, the experimental conditions for the second condition set are set as follows: the mixing ratio and temperature of the processing gas are equal to those of the first condition set, and the pressure is lower than that of the first condition set; or the mixing ratio of the processing gas is changed from that of the first condition set, and the temperature and pressure are equal to those of the first experimental conditions; or the mixing ratio and pressure of the processing gas are equal to those of the first condition set, and are equal to or less than the maximum temperature of the first condition set, which results in case D, and equal to or less than the minimum temperature of the first condition set, which results in case C; Alternatively, the mixing ratio and pressure of the processing gas are equal to those of the first set of conditions, and the temperature is equal to or higher than the lower limit temperature of the search specified by the user and equal to or lower than the minimum value of the temperature of the first set of conditions, which is the case C;the processing gas mixture ratio and pressure are set equal to those of the first condition set, and the temperature range is set equal to or greater than the maximum temperature value of the first condition set, which corresponds to case C, and equal to or less than the maximum temperature value of the first condition set, which corresponds to case D; and the etching condition determination system, wherein, when the first conditional expression is false and the second conditional expression is true, the experimental conditions for the second condition set are set equal to or greater than those of the first condition set, and the pressure is set lower than that of the first condition set, or the processing gas mixture ratio is changed from that of the first condition set, and the temperature and pressure are set equal to those of the first experimental conditions, or the processing gas mixture ratio and pressure are set equal to those of the first condition set, and the temperature range is set equal to or greater than the maximum temperature value of the first condition set, which corresponds to case C, and equal to or less than the minimum temperature value of the first condition set, which corresponds to case D. (Aspect 30) In the etching condition determination system according to any one of Aspects 17 to 29, when a pattern of change in the classified cases accompanying an increase or decrease in the temperature values ​​varies between Case A, Case C, and Case E, the temperature range related to the second set of conditions and the conditional expression for the vapor pressure of the substance related to the reaction are a conditional expression that is determined to be true when the temperature at which the predicted vapor pressure of the substance becomes equal to the pressure of the first set of conditions is smaller than the maximum temperature value of the first set of conditions that results in Case C, and when the determination result of the temperature range and the conditional expression for the vapor pressure of the substance related to the reaction is false, the experimental conditions for the second set of conditions are set so that the mixing ratio and pressure of the processing gas are equal to those of the first set of conditions, and the temperature range is equal to or greater than the maximum temperature value of the first set of conditions that results in Case C and equal to or less than the temperature at which the predicted vapor pressure of the candidate molecule becomes equal to the pressure of the first set of conditions plus a user-specified margin temperature, and when the determination result of the temperature range and the conditional expression for the vapor pressure of the substance related to the reaction is true, The second set of experimental conditions includes:A system for determining etching conditions in which the mixing ratio and temperature of the processing gas are equal to those of the first set of conditions and the pressure is lower than that of the first set of conditions, or the mixing ratio of the processing gas is changed from that of the first set of conditions and the temperature and pressure are equal to those of the first experimental conditions. (Aspect 31) The etching condition determination system according to any one of Aspects 17 to 30, wherein, when a pattern of change in the classified cases accompanying an increase or decrease in the plurality of temperature values ​​changes between Case A, Case D, and Case E, a first conditional expression for the temperature range and the vapor pressure of the substance related to the second condition set is a conditional expression that is determined to be true when the temperature at which the predicted vapor pressure of the substance becomes equal to the pressure of the first condition set is smaller than the maximum temperature value of the first condition set that results in Case A, and a second conditional expression for the temperature range and the vapor pressure of the substance related to the second condition set is a conditional expression that is determined to be true when the temperature at which the predicted vapor pressure of the substance becomes equal to the pressure of the first condition set is smaller than the maximum temperature value of the first condition set that results in Case D, and when both the first conditional expression and the second conditional expression are false, The experimental conditions for the second set of conditions are set as experimental conditions in which the mixing ratio and pressure of the processing gas are equal to those of the first set of conditions, and the temperature range is equal to or greater than the minimum temperature of the first set of conditions, which results in case D, and equal to or less than the temperature at which the predicted vapor pressure of the candidate molecule is equal to the pressure of the first set of conditions plus a user-specified margin temperature; if the first conditional expression is true and the second conditional expression is false, the experimental conditions for the second set of conditions are set as follows: the mixing ratio and temperature of the processing gas are equal to those of the first set of conditions, and the pressure is lower than that of the first set of conditions; or the mixing ratio of the processing gas is changed from that of the first set of conditions, and the temperature and pressure are equal to those of the first experimental conditions; or the mixing ratio and pressure of the processing gas are equal to those of the first set of conditions, and are equal to or less than the maximum temperature of the first set of conditions, which results in case D, and equal to or less than the minimum temperature of the first set of conditions, which results in case A;Alternatively, the mixing ratio and pressure of the process gas are equal to those of the first condition set, and are equal to or higher than the lower limit temperature of a user-specified search and equal to or lower than the minimum temperature of the first condition set which results in case A; if the first conditional expression is false and the second conditional expression is true, the experimental conditions of the second condition set are equal to those of the first condition set, and the temperature range is equal to or higher than the maximum temperature which results in case A and equal to or lower than the maximum temperature of the first condition set which results in case D; if the first conditional expression is true and the second conditional expression is true, the experimental conditions of the second condition set are equal to those of the first condition set, and the pressure is lower than that of the first condition set; or the mixing ratio of the process gas is changed from that of the first condition set, and the temperature and pressure are equal to those of the first experimental conditions; Alternatively, the mixing ratio and pressure of the processing gas are equal to those of the first set of conditions, and the temperature range is equal to or greater than the maximum temperature value of the first set of conditions, which corresponds to case A, and equal to or less than the minimum temperature value, which corresponds to case D. (Aspect 32) The etching condition determination system according to any one of Aspects 17 to 31, wherein, when a pattern of change in the classified cases accompanying an increase or decrease in the plurality of temperature values ​​varies among Case A, Case C, Case D, and Case E, a first conditional expression for the temperature range and the vapor pressure of the substance related to the second condition set is a conditional expression that is determined to be true when the temperature at which the predicted vapor pressure of the substance becomes equal to the pressure of the first condition set is smaller than the maximum temperature value of the first condition set, which results in Case C, and a second conditional expression for the temperature range and the vapor pressure of the substance related to the second condition set is a conditional expression that is determined to be true when the temperature at which the predicted vapor pressure of the substance becomes equal to the pressure of the first condition set is smaller than the maximum temperature value of the first condition set, which results in Case D, and when both the first conditional expression and the second conditional expression are false,The experimental conditions for the second condition set are set as experimental conditions in which the mixing ratio and pressure of the processing gas are equal to those of the first condition set, and the temperature range is equal to or greater than the minimum temperature value that results in case D and equal to or less than the temperature at which the predicted vapor pressure of the candidate molecule is equal to the pressure of the first condition set plus a user-specified margin temperature; and when the first conditional expression is true and the second conditional expression is false, the experimental conditions for the second condition set are set as follows: the mixing ratio and temperature of the processing gas are equal to those of the first condition set and the pressure is lower than that of the first condition set, or the mixing ratio of the processing gas is changed from that of the first condition set and the temperature and pressure are equal to those of the first experimental conditions, or the mixing ratio and pressure of the processing gas are equal to those of the first condition set and are equal to or less than the maximum temperature value of the first condition set that results in case D and equal to or less than the minimum temperature value of the first condition set that results in case C, Alternatively, the mixing ratio and pressure of the process gas are the same as those in the first condition set, and are above the lower limit temperature of a user-specified search and below the minimum temperature value of the first condition set, which corresponds to case C; if the first conditional expression is false and the second conditional expression is true, the experimental conditions of the second condition set are the mixing ratio and pressure of the process gas are the same as those in the first condition set, and the temperature range is above the maximum temperature value of the first condition set, which corresponds to case C, and below the maximum temperature value of the first condition set, which corresponds to case D; if the first conditional expression is true and the second conditional expression is true, the experimental conditions of the second condition set are the mixing ratio and temperature of the process gas are the same as those in the first condition set, and the pressure is lower than that of the first condition set; or the mixing ratio of the process gas is changed from that in the first condition set, and the temperature and pressure are equal to those of the first experimental conditions; Alternatively, the mixing ratio and pressure of the processing gas are equal to those of the first set of conditions, and the temperature range is equal to or greater than the maximum temperature value of the first set of conditions, which corresponds to case C, and equal to or less than the minimum temperature value of the first set of conditions, which corresponds to case D.

[0141] DESCRIPTION OF SYMBOLS 1a, 1b Sample stage, 3 Coolant flow path, 5 Pressure gauge, 7 Optical spectrum measurement unit, 9 IR lamp, 10 Window, 11 Film thickness meter (ellipsometer), 13 Gas flow path, 15 Wafer, 17 Valve, 19 QMASS, 21a, 21b Exhaust device, 23 Gas supply device, 25 XPS measurement unit, 27 Control device, 29 ICP coil, 31 Wafer transfer port, 33 Transfer tube, 35 Flow meter, 50 Information processing unit, 51a, 51d CPU, 52a, 52d Memory, 53a, 53d Auxiliary storage device, 54a to 54d Network connection unit, 55 Interface unit, 56 Network, 57 Data storage unit, 60 Input / output unit, 61 Display device, 62 Input device, 70 Experimental chamber, 72 XPS chamber, 201 Start, 202 End, 203 Experimental plan setting, 204 Start of experimental condition generation, 206 Start of set experiment, 207 Execution of experiment, 208 Measurement (light + QMASS), 209 Surface light measurement / storage in DB, 210 Film thickness meter measurement / storage in DB, 211 QMASS measurement / storage in DB, 212 Storage in DB, 214 Determination of completion of all measurements in set, 215 Determination of film thickness change, 216 Start of determination, 217 Determination of adhesion, 218 Recording of surface condition type in DB, 219 Determination of completion of all determinations in set, 220 XPS measurement / storage in DB, 240 Determination of search repetition number (L) = 0n, 241 Determination of user-specified search end, 242 Determination of type B, 205 Generation of experimental conditions, 234 End of experimental condition generation, 235 Product estimation, 236 Property estimation 237 Accumulate in DB, 242 Whether all-A state or not, 243 Check temperature coverage, 244 Determine whether to execute pressure change, 245 Set temperature conditions, 246 Set pressure conditions, 247 Set gas ratio change, 251 Start product-physical property estimation, 252 Check judgment value of one measurement in the set, 253 Determine completion of all measurement data in the set, 254 Determine experimental condition setting policy based on adhesion pattern / estimated physical property value, 255 Set experimental conditions based on experimental condition setting policy, 301 Start, 303 List of atomic groups determined from detected light spectrum (List A), 305 List of elements and bonding information contained in product using XPS spectrum (List B),307 Listing of elements included in gas composition, gas ratio conditions, and substrate information (List C), 309 Extraction of candidate molecular structures, 311 Narrowing down by upper molecular weight limit, 313 Narrowing down molecular structures by QMASS information, 315 Addition of user's target product structure, 317 Generation of molecular structure ID, 319 Accumulation in DB, 321 End, 401 Start, 403 Reading of candidate molecular structure from DB, 405 Calculation of vapor pressure data, 409 End, 5000 Determination system, 5001 Experimental equipment, 5002 Measurement equipment

Claims

1. A method for determining etching conditions for etching a film to be processed on a sample placed inside a container by supplying a predetermined processing gas into the container and maintaining the temperature of the sample and the pressure inside the container at predetermined values, comprising: a first set of conditions including a plurality of values ​​of at least any of the temperature and the pressure, and classifying the results of the etching process performed using the first set of conditions into one of a plurality of cases according to changes in the amount of deposits and the film thickness, including case A where the amount of deposits is within an allowable range and the decrease in the film thickness is smaller than a predetermined first threshold, case B where the amount of deposits is within the allowable range and the decrease in the film thickness is equal to or greater than the predetermined threshold, case C where the amount of deposits is outside the allowable range and the increase or decrease in the film thickness is smaller than a second threshold, case D where the amount of deposits is outside the allowable range and the film thickness decreases, and case E where the amount of deposits is outside the allowable range and the film thickness increases to or greater than the second threshold, and selecting candidates for a reaction including the material of the film to be processed in the etching process; If the classification result includes the case B, the values ​​of the processing gas and temperature corresponding to the case B are determined to be processing conditions for the film to be processed; When the classification result does not include case B, a second set of conditions is calculated that includes the temperature and pressure ranges in which the result of the etching process by the reaction of the selected candidate reaction may be case B, according to a pattern of change in the classified cases accompanying an increase or decrease in at least any of the temperature and pressure values.

2. The method for determining etching conditions according to claim 1, A method for determining etching conditions, in which the candidate reaction is selected based on the results of detecting light or products from the surface of the sample during the etching process.

3. The method for determining etching conditions according to claim 1 or 2, When the classification result includes the case B, the processing gas and temperature values ​​corresponding to the case B are determined as processing conditions for the film to be processed, for the results of the etching process performed at the plurality of temperatures selected from the temperature range of the second condition set; A method for determining etching conditions, in which, when the case B is not included, the range of temperature and pressure conditions that may result in the etching process due to the reaction being case B is calculated according to the pattern of change in the multiple cases obtained by performing the classification.

3. The method for determining etching conditions according to claim 1 or 2, If the classification result for the etching process performed at the pressures of the plurality of values ​​selected from the temperature range of the second condition set includes the case B, the processing gas and temperature values ​​corresponding to the case B are determined to be processing conditions for the film to be processed; A method for determining etching conditions, which, when the case B is not included, calculates a third range of conditions of the temperature and pressure that may result in the etching process due to the reaction becoming the case B, according to a change pattern of the plurality of cases obtained by performing the classification.

3. The method for determining etching conditions according to claim 1 or 2, A method for determining etching conditions, in which if the classification obtained for the results of the etching process using the first set of conditions does not include case B, the pressure value related to the second set of conditions is made lower than the pressure value related to the first conditions.

6. The method for determining etching conditions according to claim 1, further comprising: The method for determining etching conditions, wherein the temperature and pressure ranges of the second set of conditions include a range that is equal to or greater than the saturated vapor pressure of a substance related to the candidate reaction.

7. The method for determining etching conditions according to claim 6, A method for determining etching conditions, in which, when the classification results obtained for the results of the etching process using the first condition set do not include case B, the temperature and pressure ranges of the second condition set are calculated according to the results of determining the conditional equation for the temperature range and the conditional equation for the vapor pressure of the substance related to the reaction for each of the change patterns of the classified cases accompanying increases and decreases in the temperature values.

3. The method for determining etching conditions according to claim 1 or 2, A method for determining etching conditions, which creates at least one candidate molecular structure from a combination of elements obtained from information indicating the film structure arranged on the surface of the sample including the film to be processed and the type or composition of the substance constituting the processing gas, and which includes at least one candidate atomic structure that constitutes the product during the etching process obtained using the light from the surface of the sample during the etching process and at least one molecular partial structure included in the bonding information of the elements that constitute the candidate product, and selects from the candidate molecular structure candidates a candidate for the reaction that includes a molecular structure that is equal to or less than a predetermined upper limit of molecular weight.

9. The method for determining etching conditions according to claim 8, The method for determining etching conditions includes registering the molecular structure having a molecular weight equal to or less than the predetermined upper limit in a database.

8. The method for determining etching conditions according to claim 7, If the pattern of change of the classified cases with an increase or decrease in the plurality of temperature values ​​changes between the case A and the case C, a conditional expression for the temperature range and the vapor pressure of the substance related to the reaction in the second set of conditions that is determined to be true when the temperature at which the predicted vapor pressure of the substance becomes equal to the pressure in the first set of conditions is smaller than the maximum temperature value in the first set of conditions that corresponds to case C; If the conditional expression for the temperature range and the vapor pressure of the substance related to the reaction is false, The second set of experimental conditions includes: The mixing ratio and pressure of the processing gas are the same as those of the first set of conditions, and the temperature range is a range equal to or higher than the maximum temperature of the first set of conditions that results in C and equal to or lower than the temperature at which the predicted vapor pressure of the candidate molecule is equal to the pressure of the first set of conditions plus a margin temperature designated by the user; If the result of the judgment of the conditional expression of the temperature range and the vapor pressure of the substance related to the reaction is true, The second set of experimental conditions includes: The mixing ratio and temperature of the processing gas are equal to those of the first set of conditions, but the pressure is lower than that of the first set of conditions. Alternatively, the mixing ratio of the processing gas is changed from that of the first set of conditions, and the temperature and pressure are the same as those of the first experimental conditions; A method for determining etching conditions.

8. The method for determining etching conditions according to claim 7, If the pattern of change of the classified cases with an increase or decrease in the plurality of values ​​of the temperature changes between the case A and the case D, a first conditional expression for the temperature range and the vapor pressure of the substance related to the reaction in the second conditional expression set, which is determined to be true when the temperature at which the predicted vapor pressure of the substance becomes equal to the pressure in the first conditional expression set is smaller than the maximum temperature value in the first conditional expression set for case A; a second conditional expression for the temperature range and the vapor pressure of the substance related to the reaction according to the second set of conditions, the second conditional expression being determined to be true when the temperature at which the predicted vapor pressure of the substance becomes equal to the pressure according to the first set of conditions is smaller than the maximum temperature value according to the first set of conditions, which corresponds to case C; If the first conditional expression and the second conditional expression are both false, As experimental conditions of the second set of conditions, the mixing ratio and pressure of the processing gas are the same as those of the first set of conditions, and the temperature range is set to be equal to or higher than the minimum value of the temperature of the first set of conditions, which is the case of D, and equal to or lower than a temperature at which the predicted vapor pressure of the candidate molecule is equal to the pressure of the first set of conditions plus a margin temperature designated by a user; If the first conditional expression is true and the second conditional expression is false, The experimental conditions of the second set of conditions are that the mixing ratio and temperature of the processing gas are equal to those of the first set of conditions, and the pressure is lower than that of the first set of conditions; Alternatively, the mixing ratio of the processing gas is changed from that of the first set of conditions, and the temperature and pressure are the same as those of the first experimental conditions; Alternatively, the mixing ratio and pressure of the processing gas are equal to those of the first set of conditions, and are equal to or lower than the maximum value of the temperature of the first set of conditions, which corresponds to the case D, and are equal to or lower than the minimum value of the temperature of the first set of conditions, which corresponds to the case A. Alternatively, the mixing ratio and pressure of the processing gas are equal to those of the first set of conditions, and the temperature is equal to or higher than the lower limit temperature of the search specified by the user and equal to or lower than the minimum value of the temperature of the first set of conditions, which is the case of A; If the first conditional expression is false and the second conditional expression is true, The experimental conditions of the second set of conditions are set so that the mixing ratio and pressure of the processing gas are equal to those of the first set of conditions, and the temperature range is set so that it is equal to or greater than the maximum temperature value of the first set of conditions, which corresponds to the case A, and equal to or less than the maximum temperature value of the first set of conditions, which corresponds to the case D, If the first conditional expression is true and the second conditional expression is true, The experimental conditions of the second set of conditions are that the mixing ratio and temperature of the processing gas are equal to those of the first set of conditions, and the pressure is lower than that of the first set of conditions; Alternatively, the mixing ratio of the processing gas is changed from that of the first set of conditions, and the temperature and pressure are the same as those of the first experimental conditions; Alternatively, the mixing ratio and pressure of the processing gas are equal to those of the first set of conditions, and the temperature range is equal to or greater than the maximum temperature value of the first set of conditions, which corresponds to A, and equal to or less than the minimum temperature value of the first set of conditions, which corresponds to D. A method for determining etching conditions.

8. The method for determining etching conditions according to claim 7, If the pattern of change of the classified cases with an increase or decrease in the plurality of temperature values ​​changes between the case A and the case E, a conditional expression for the temperature range and the vapor pressure of the substance related to the reaction in the second set of conditions that is determined to be true when the temperature at which the predicted vapor pressure of the substance becomes equal to the pressure in the first set of conditions is smaller than the maximum temperature value in the first set of conditions that corresponds to case A; If the result of the judgment of the conditional expression of the temperature range and the vapor pressure of the substance related to the reaction is false, The second set of experimental conditions includes: The mixing ratio and pressure of the processing gas are the same as those of the first set of conditions, and the temperature range is a range equal to or higher than the maximum temperature of the first set of conditions for case A and equal to or lower than the temperature at which the predicted vapor pressure of the candidate molecule is equal to the pressure of the first set of conditions plus a margin temperature designated by the user; If the result of the judgment of the conditional expression of the temperature range and the vapor pressure of the substance related to the reaction is true, The second set of experimental conditions includes: The mixing ratio and temperature of the processing gas are equal to those of the first set of conditions, but the pressure is lower than that of the first set of conditions. Alternatively, the mixing ratio of the processing gas is changed from that of the first set of conditions, and the temperature and pressure are the same as those of the first experimental conditions; A method for determining etching conditions.

8. The method for determining etching conditions according to claim 7, When the pattern of change of the classified cases with the increase or decrease of the plurality of values ​​of the temperature changes between the case A, the case C, and the case D, a first conditional expression for the temperature range and the vapor pressure of the substance related to the reaction in the second conditional expression set, which is determined to be true when the temperature at which the predicted vapor pressure of the substance becomes equal to the pressure in the first conditional expression set is smaller than the maximum temperature value in the first conditional expression set, which corresponds to case C; a second conditional expression for the temperature range and the vapor pressure of the substance related to the reaction in the second set of conditions, the second conditional expression being determined to be true when the temperature at which the predicted vapor pressure of the substance becomes equal to the pressure in the first set of conditions is smaller than the maximum temperature value in the first set of conditions, which corresponds to case D; If the first conditional expression and the second conditional expression are both false, As experimental conditions of the second set of conditions, the mixing ratio and pressure of the processing gas are the same as those of the first set of conditions, and the temperature range is set to be equal to or higher than the minimum value of the temperature of the first set of conditions, which is the case of D, and equal to or lower than a temperature at which the predicted vapor pressure of the candidate molecule is equal to the pressure of the first set of conditions plus a margin temperature designated by a user; If the first conditional expression is true and the second conditional expression is false, The second set of experimental conditions includes: The mixing ratio and temperature of the processing gas are equal to those of the first set of conditions, but the pressure is lower than that of the first set of conditions. Alternatively, the mixing ratio of the processing gas is changed from that of the first set of conditions, and the temperature and pressure are the same as those of the first experimental conditions; Alternatively, the mixing ratio and pressure of the processing gas are equal to those of the first set of conditions, and are equal to or lower than the maximum temperature value of the first set of conditions, which corresponds to the case D, and are equal to or lower than the minimum temperature value of the first set of conditions, which corresponds to the case C. Alternatively, the mixing ratio and pressure of the processing gas are equal to those of the first set of conditions, and the temperature is equal to or higher than the lower limit temperature of the search specified by the user and equal to or lower than the minimum value of the temperature of the first set of conditions, which is the case C; If the first conditional expression is false and the second conditional expression is true, The experimental conditions of the second set of conditions are set so that the mixing ratio and pressure of the processing gas are equal to those of the first set of conditions, and the temperature range is set so that it is equal to or greater than the maximum temperature value of the first set of conditions, which corresponds to case C, and equal to or less than the maximum temperature value of the first set of conditions, which corresponds to case D, If the first conditional expression is true and the second conditional expression is true, The experimental conditions of the second set of conditions are that the mixing ratio and temperature of the processing gas are equal to those of the first set of conditions, and the pressure is lower than that of the first set of conditions; Alternatively, the mixing ratio of the processing gas is changed from that of the first set of conditions, and the temperature and pressure are the same as those of the first experimental conditions; Alternatively, the mixing ratio and pressure of the processing gas are equal to those of the first set of conditions, and the temperature range is equal to or greater than the maximum temperature value of the first set of conditions, which corresponds to case C, and equal to or less than the minimum temperature value of the first set of conditions, which corresponds to case D. A method for determining etching conditions.

8. The method for determining etching conditions according to claim 7, If the pattern of change of the classified cases with an increase or decrease in the plurality of values ​​of the temperature changes between the case A, the case C, and the case E, a conditional expression for the temperature range and the vapor pressure of the substance related to the reaction in the second set of conditions that is determined to be true when the temperature at which the predicted vapor pressure of the substance becomes equal to the pressure in the first set of conditions is smaller than the maximum temperature value in the first set of conditions that corresponds to case C; If the result of the judgment of the conditional expression of the temperature range and the vapor pressure of the substance related to the reaction is false, As experimental conditions of the second set of conditions, the mixing ratio and pressure of the processing gas are the same as those of the first set of conditions, and the temperature range is a range equal to or higher than the maximum temperature of the first set of conditions, which corresponds to case C, and equal to or lower than a temperature at which the predicted vapor pressure of the candidate molecule is equal to the pressure of the first set of conditions plus a margin temperature designated by a user; If the result of the judgment of the conditional expression of the temperature range and the vapor pressure of the substance related to the reaction is true, The second set of experimental conditions includes: The mixing ratio and temperature of the processing gas are equal to those of the first set of conditions, but the pressure is lower than that of the first set of conditions. Alternatively, the mixing ratio of the processing gas is changed from that of the first set of conditions, and the temperature and pressure are the same as those of the first experimental conditions; A method for determining etching conditions.

8. The method for determining etching conditions according to claim 7, If the pattern of change of the classified cases with an increase or decrease in the plurality of values ​​of the temperature changes between the case A, the case D, and the case E, a first conditional expression for the temperature range and the vapor pressure of the substance related to the reaction in the second conditional expression set, which is determined to be true when the temperature at which the predicted vapor pressure of the substance becomes equal to the pressure in the first conditional expression set is smaller than the maximum temperature in the first conditional expression set at which A occurs; a second conditional expression for the temperature range and the vapor pressure of the substance related to the reaction in the second set of conditions, the second conditional expression being determined to be true when the temperature at which the predicted vapor pressure of the substance becomes equal to the pressure in the first set of conditions is smaller than the maximum temperature value in the first set of conditions, which corresponds to case D; If the first conditional expression and the second conditional expression are both false, As experimental conditions of the second set of conditions, the mixing ratio and pressure of the processing gas are the same as those of the first set of conditions, and the temperature range is set to be equal to or higher than the minimum value of the temperature of the first set of conditions, which is the case of D, and equal to or lower than a temperature at which the predicted vapor pressure of the candidate molecule is equal to the pressure of the first set of conditions plus a margin temperature designated by a user; If the first conditional expression is true and the second conditional expression is false, The second set of experimental conditions includes: The mixing ratio and temperature of the processing gas are equal to those of the first set of conditions, but the pressure is lower than that of the first set of conditions. Alternatively, the mixing ratio of the processing gas is changed from that of the first set of conditions, and the temperature and pressure are the same as those of the first experimental conditions; Alternatively, the mixing ratio and pressure of the processing gas are equal to those of the first set of conditions, and are equal to or lower than the maximum value of the temperature of the first set of conditions, which corresponds to the case D, and are equal to or lower than the minimum value of the temperature of the first set of conditions, which corresponds to the case A. Alternatively, the mixing ratio and pressure of the processing gas are equal to those of the first set of conditions, and the temperature is equal to or higher than the lower limit temperature of the search specified by the user and equal to or lower than the minimum value of the temperature of the first set of conditions, which is the case of A; If the first conditional expression is false and the second conditional expression is true, The experimental conditions of the second set of conditions are set so that the mixing ratio and pressure of the processing gas are equal to those of the first set of conditions, and the temperature range is set so that it is equal to or greater than the maximum temperature of the case A and equal to or less than the maximum temperature of the first set of conditions of the case D, If the first conditional expression is true and the second conditional expression is true, The experimental conditions of the second set of conditions are that the mixing ratio and temperature of the processing gas are equal to those of the first set of conditions, and the pressure is lower than that of the first set of conditions; Alternatively, the mixing ratio of the processing gas is changed from that of the first set of conditions, and the temperature and pressure are the same as those of the first experimental conditions; Alternatively, the mixing ratio and pressure of the processing gas are equal to those of the first set of conditions, and the temperature range is equal to or greater than the maximum temperature value of the first set of conditions, which corresponds to the case A, and equal to or less than the minimum temperature value, which corresponds to the case D. A method for determining etching conditions.

8. The method for determining etching conditions according to claim 7, When the pattern of change of the classified cases with the increase or decrease of the plurality of values ​​of the temperature changes between the case A, the case C, the case D, and the case E, a first conditional expression for the temperature range and the vapor pressure of the substance related to the reaction in the second conditional expression set, which is determined to be true when the temperature at which the predicted vapor pressure of the substance becomes equal to the pressure in the first conditional expression set is smaller than the maximum temperature value in the first conditional expression set, which corresponds to case C; a second conditional expression for the temperature range and the vapor pressure of the substance related to the reaction in the second set of conditions, the second conditional expression being determined to be true when the temperature at which the predicted vapor pressure of the substance becomes equal to the pressure in the first set of conditions is smaller than the maximum temperature value in the first set of conditions, which corresponds to case D; If the first conditional expression and the second conditional expression are both false, As experimental conditions of the second set of conditions, the mixing ratio and pressure of the processing gas are the same as those of the first set of conditions, and the temperature range is equal to or higher than the minimum value of the temperature in the case of D and equal to or lower than the temperature at which the predicted vapor pressure of the candidate molecule is equal to the pressure of the first set of conditions plus a margin temperature designated by the user; If the first conditional expression is true and the second conditional expression is false, The second set of experimental conditions includes: The mixing ratio and temperature of the processing gas are equal to those of the first set of conditions, but the pressure is lower than that of the first set of conditions. Alternatively, the mixing ratio of the processing gas is changed from that of the first set of conditions, and the temperature and pressure are the same as those of the first experimental conditions; Alternatively, the mixing ratio and pressure of the processing gas are equal to those of the first set of conditions, and are equal to or lower than the maximum temperature value of the first set of conditions, which corresponds to the case D, and are equal to or lower than the minimum temperature value of the first set of conditions, which corresponds to the case C. Alternatively, the mixing ratio and pressure of the processing gas are equal to those of the first set of conditions, and the temperature is equal to or higher than the lower limit temperature of the search specified by the user and equal to or lower than the minimum value of the temperature of the first set of conditions, which is the case C; If the first conditional expression is false and the second conditional expression is true, The experimental conditions of the second set of conditions are set so that the mixing ratio and pressure of the processing gas are equal to those of the first set of conditions, and the temperature range is set so that it is equal to or greater than the maximum temperature value of the first set of conditions, which corresponds to case C, and equal to or less than the maximum temperature value of the first set of conditions, which corresponds to case D, If the first conditional expression is true and the second conditional expression is true, The experimental conditions of the second set of conditions are that the mixing ratio and temperature of the processing gas are equal to those of the first set of conditions, and the pressure is lower than that of the first set of conditions; Alternatively, the mixing ratio of the processing gas is changed from that of the first set of conditions, and the temperature and pressure are the same as those of the first experimental conditions; Alternatively, the mixing ratio and pressure of the processing gas are equal to those of the first set of conditions, and the temperature range is equal to or greater than the maximum temperature value of the first set of conditions, which corresponds to case C, and equal to or less than the minimum temperature value of the first set of conditions, which corresponds to case D. A method for determining etching conditions.

1. A system for determining etching conditions for etching a film to be processed on a sample placed inside a container by supplying a predetermined processing gas into the container and maintaining the temperature of the sample and the pressure inside the container at predetermined values, a first set of conditions including a plurality of values ​​of at least any of the temperature and the pressure, and classifying the results of the etching process performed using the first set of conditions into one of a plurality of cases according to changes in the amount of deposits and the film thickness, including case A where the amount of deposits is within an allowable range and the decrease in the film thickness is smaller than a predetermined first threshold, case B where the amount of deposits is within the allowable range and the decrease in the film thickness is equal to or greater than the predetermined threshold, case C where the amount of deposits is outside the allowable range and the increase or decrease in the film thickness is smaller than a second threshold, case D where the amount of deposits is outside the allowable range and the film thickness decreases, and case E where the amount of deposits is outside the allowable range and the film thickness increases to or greater than the second threshold, and selecting candidates for a reaction including the material of the film to be processed in the etching process; If the classification result includes the case B, the values ​​of the processing gas and temperature corresponding to the case B are determined to be processing conditions for the film to be processed; and a second set of conditions that includes the temperature and pressure ranges in which the result of the etching process by the reaction of the selected candidate reaction may be case B, in accordance with a pattern of change in the classified cases that accompanies an increase or decrease in at least any of the temperature and pressure values, when the classification result does not include case B.

18. The etching condition determination system according to claim 17, An etching condition determination system in which the candidate reaction is selected based on the results of detecting light or products from the surface of the sample during the etching process.

19. The etching condition determination system according to claim 17 or 18, When the classification result includes the case B, the processing gas and temperature values ​​corresponding to the case B are determined as processing conditions for the film to be processed, for the results of the etching process performed at the plurality of temperatures selected from the temperature range of the second condition set; and a determination system for determining etching conditions that, when the case B is not included, calculates a range of the temperature and pressure conditions that may result in the etching process due to the reaction being case B, according to a change pattern of the plurality of cases obtained by performing the classification.

19. The etching condition determination system according to claim 17 or 18, If the classification result for the etching process performed at the pressures of the plurality of values ​​selected from the temperature range of the second condition set includes the case B, the gas and temperature values ​​corresponding to the case B are determined to be processing conditions for the film to be processed; and a system for determining etching conditions that, when the case B is not included, calculates a third range of conditions of the temperature and pressure that may result in the etching process due to the reaction being case B, according to a pattern of change in the plurality of cases obtained by performing the classification.

19. The etching condition determination system according to claim 17 or 18, An etching condition determination system in which, if the classification obtained for the results of the etching process using the first condition set does not include case B, the pressure value related to the second condition set is made lower than the pressure value related to the first condition set.

22. The etching condition determination system according to claim 17, The system for determining etching conditions, wherein the temperature and pressure ranges of the second set of conditions include a range that is equal to or greater than the saturated vapor pressure of a substance related to the candidate reaction.

23. The etching condition determination system according to claim 22, When the classification result obtained for the results of the etching process using the first condition set does not include case B, the etching condition determination system calculates the temperature and pressure ranges of the second condition set according to the results of determining the conditional equation for the temperature range and the conditional equation for the vapor pressure of the substance related to the reaction for each of the change patterns of the classified cases accompanying increases and decreases in the temperature values.

19. The etching condition determination system according to claim 17 or 18, An etching condition determination system that creates at least one candidate molecular structure from a combination of elements obtained from information indicating the film structure arranged on the surface of the sample including the film to be processed and the type or composition of the substance constituting the processing gas, and that includes at least one candidate atomic structure that constitutes the product during processing obtained using the light from the surface of the sample during processing and at least one molecular partial structure included in the bonding information of the elements that constitute the candidate product, and selects a candidate molecular structure from the candidate molecular structure that includes a molecular structure that is below a predetermined upper limit of molecular weight.

25. The etching condition determination system according to claim 24, An etching condition determination system that registers the molecular structures that are equal to or less than the predetermined upper limit of molecular weight in a database.

24. The etching condition determination system according to claim 23, If the pattern of change of the classified cases with an increase or decrease in the plurality of temperature values ​​changes between the case A and the case C, a conditional expression for the temperature range and the vapor pressure of the substance related to the reaction in the second set of conditions that is determined to be true when the temperature at which the predicted vapor pressure of the substance becomes equal to the pressure in the first set of conditions is smaller than the maximum temperature value in the first set of conditions that corresponds to case C; If the conditional expression for the temperature range and the vapor pressure of the substance related to the reaction is false, The second set of experimental conditions includes: The mixing ratio and pressure of the processing gas are the same as those of the first set of conditions, and the temperature range is a range equal to or higher than the maximum temperature of the first set of conditions, which corresponds to case C, and equal to or lower than a temperature at which the predicted vapor pressure of the candidate molecule is equal to the pressure of the first set of conditions plus a margin temperature designated by a user; If the result of the judgment of the conditional expression of the temperature range and the vapor pressure of the substance related to the reaction is true, The second set of experimental conditions includes: The mixing ratio and temperature of the processing gas are equal to those of the first set of conditions, but the pressure is lower than that of the first set of conditions. Alternatively, the mixing ratio of the processing gas is changed from that of the first set of conditions, and the temperature and pressure are the same as those of the first experimental conditions; A system for determining etching conditions.

24. The etching condition determination system according to claim 23, If the pattern of change of the classified cases with an increase or decrease in the plurality of values ​​of the temperature changes between the case A and the case D, a first conditional expression for the temperature range and the vapor pressure of the substance related to the reaction in the second conditional expression set, which is determined to be true when the temperature at which the predicted vapor pressure of the substance becomes equal to the pressure in the first conditional expression set is smaller than the maximum temperature in the first conditional expression set at which A occurs; a second conditional expression for the temperature range and the vapor pressure of the substance related to the reaction according to the second set of conditions, the second conditional expression being determined to be true when the temperature at which the predicted vapor pressure of the substance becomes equal to the pressure according to the first set of conditions is smaller than the maximum temperature value according to the first set of conditions, which corresponds to case C; If the first conditional expression and the second conditional expression are both false, As experimental conditions of the second set of conditions, the mixing ratio and pressure of the processing gas are the same as those of the first set of conditions, and the temperature range is set to be equal to or higher than the minimum value of the temperature of the first set of conditions that results in D and equal to or lower than a temperature at which the predicted vapor pressure of the candidate molecule is equal to the pressure of the first set of conditions plus a margin temperature designated by a user; If the first conditional expression is true and the second conditional expression is false, The experimental conditions of the second set of conditions are that the mixing ratio and temperature of the processing gas are equal to those of the first set of conditions, and the pressure is lower than that of the first set of conditions; Alternatively, the mixing ratio of the processing gas is changed from that of the first set of conditions, and the temperature and pressure are the same as those of the first experimental conditions; Alternatively, the mixing ratio and pressure of the processing gas are equal to those of the first set of conditions, and are equal to or lower than the maximum value of the temperature of the first set of conditions, which corresponds to the case D, and are equal to or lower than the minimum value of the temperature of the first set of conditions, which corresponds to the case A. Alternatively, the mixing ratio and pressure of the processing gas are equal to those of the first set of conditions, and the temperature is equal to or higher than the lower limit temperature of the search specified by the user and equal to or lower than the minimum value of the temperature of the first set of conditions that becomes A; If the first conditional expression is false and the second conditional expression is true, The experimental conditions of the second set of conditions are set so that the mixing ratio and pressure of the processing gas are equal to those of the first set of conditions, and the temperature range is set so that it is equal to or greater than the maximum temperature value of the first set of conditions, which corresponds to the case A, and equal to or less than the maximum temperature value of the first set of conditions, which corresponds to the case D, If the first conditional expression is true and the second conditional expression is true, The experimental conditions of the second set of conditions are that the mixing ratio and temperature of the processing gas are equal to those of the first set of conditions, and the pressure is lower than that of the first set of conditions; Alternatively, the mixing ratio of the processing gas is changed from that of the first set of conditions, and the temperature and pressure are the same as those of the first experimental conditions; Alternatively, the mixing ratio and pressure of the processing gas are equal to those of the first set of conditions, and the temperature range is equal to or greater than the maximum temperature value of the first set of conditions, which corresponds to the case A, and equal to or less than the minimum temperature value of the first set of conditions, which corresponds to the case D. A system for determining etching conditions.

24. The etching condition determination system according to claim 23, If the pattern of change of the classified cases with an increase or decrease in the plurality of temperature values ​​changes between the case A and the case E, a conditional expression for the temperature range and the vapor pressure of the substance related to the reaction in the second set of conditions that is determined to be true when the temperature at which the predicted vapor pressure of the substance becomes equal to the pressure in the first set of conditions is smaller than the maximum temperature value in the first set of conditions that corresponds to case A; If the result of the judgment of the conditional expression of the temperature range and the vapor pressure of the substance related to the reaction is false, The second set of experimental conditions includes: The mixing ratio and pressure of the processing gas are the same as those of the first set of conditions, and the temperature range is a range equal to or higher than the maximum temperature of the first set of conditions for case A and equal to or lower than the temperature at which the predicted vapor pressure of the candidate molecule is equal to the pressure of the first set of conditions plus a margin temperature designated by the user; If the result of the judgment of the conditional expression of the temperature range and the vapor pressure of the substance related to the reaction is true, The second set of experimental conditions includes: The mixing ratio and temperature of the processing gas are equal to those of the first set of conditions, but the pressure is lower than that of the first set of conditions. Alternatively, the mixing ratio of the processing gas is changed from that of the first set of conditions, and the temperature and pressure are the same as those of the first experimental conditions; A system for determining etching conditions.

24. The etching condition determination system according to claim 23, When the pattern of change of the classified cases with the increase or decrease of the plurality of values ​​of the temperature changes between the case A, the case C, and the case D, a first conditional expression for the temperature range and the vapor pressure of the substance related to the reaction in the second conditional expression set, which is determined to be true when the temperature at which the predicted vapor pressure of the substance becomes equal to the pressure in the first conditional expression set is smaller than the maximum temperature value in the first conditional expression set, which corresponds to case C; a second conditional expression for the temperature range and the vapor pressure of the substance related to the reaction according to the second set of conditions, the second conditional expression being determined to be true when the temperature at which the predicted vapor pressure of the substance becomes equal to the pressure according to the first set of conditions is smaller than the maximum temperature according to the first set of conditions at which D is achieved; If the first conditional expression and the second conditional expression are both false, As experimental conditions of the second set of conditions, the mixing ratio and pressure of the processing gas are the same as those of the first set of conditions, and the temperature range is set to be equal to or higher than the minimum value of the temperature of the first set of conditions, which is the case of D, and equal to or lower than a temperature at which the predicted vapor pressure of the candidate molecule is equal to the pressure of the first set of conditions plus a margin temperature designated by a user; If the first conditional expression is true and the second conditional expression is false, The second set of experimental conditions includes: The mixing ratio and temperature of the processing gas are equal to those of the first set of conditions, but the pressure is lower than that of the first set of conditions. Alternatively, the mixing ratio of the processing gas is changed from that of the first set of conditions, and the temperature and pressure are the same as those of the first experimental conditions; Alternatively, the mixing ratio and pressure of the processing gas are equal to those of the first set of conditions, and are equal to or lower than the maximum value of the temperature of the first set of conditions, which is D, and are equal to or lower than the minimum value of the temperature of the first set of conditions, which is C. Alternatively, the mixing ratio and pressure of the processing gas are equal to those of the first set of conditions, and the temperature is equal to or higher than the lower limit temperature of the search specified by the user and equal to or lower than the minimum value of the temperature of the first set of conditions, which is the case C; If the first conditional expression is false and the second conditional expression is true, The experimental conditions of the second set of conditions are set so that the mixing ratio and pressure of the processing gas are equal to those of the first set of conditions, and the temperature range is set so that it is equal to or greater than the maximum temperature value of the first set of conditions, which corresponds to case C, and equal to or less than the maximum temperature value of the first set of conditions, which corresponds to case D, If the first conditional expression is true and the second conditional expression is true, The experimental conditions of the second set of conditions are that the mixing ratio and temperature of the processing gas are equal to those of the first set of conditions, and the pressure is lower than that of the first set of conditions; Alternatively, the mixing ratio of the processing gas is changed from that of the first set of conditions, and the temperature and pressure are the same as those of the first experimental conditions; Alternatively, the mixing ratio and pressure of the processing gas are equal to those of the first set of conditions, and the temperature range is equal to or greater than the maximum temperature value of the first set of conditions, which corresponds to case C, and equal to or less than the minimum temperature value of the first set of conditions, which corresponds to case D. A system for determining etching conditions.

24. The etching condition determination system according to claim 23, If the pattern of change of the classified cases with an increase or decrease in the plurality of values ​​of the temperature changes between the case A, the case C, and the case E, a conditional expression for the temperature range and the vapor pressure of the substance related to the reaction in the second set of conditions that is determined to be true when the temperature at which the predicted vapor pressure of the substance becomes equal to the pressure in the first set of conditions is smaller than the maximum temperature value in the first set of conditions that corresponds to case C; If the result of the judgment of the conditional expression of the temperature range and the vapor pressure of the substance related to the reaction is false, As experimental conditions of the second set of conditions, the mixing ratio and pressure of the processing gas are the same as those of the first set of conditions, and the temperature range is a range equal to or higher than the maximum temperature of the first set of conditions, which corresponds to case C, and equal to or lower than a temperature at which the predicted vapor pressure of the candidate molecule is equal to the pressure of the first set of conditions plus a margin temperature designated by a user; If the result of the judgment of the conditional expression of the temperature range and the vapor pressure of the substance related to the reaction is true, The second set of experimental conditions includes: The mixing ratio and temperature of the processing gas are equal to those of the first set of conditions, but the pressure is lower than that of the first set of conditions. Alternatively, the mixing ratio of the processing gas is changed from that of the first set of conditions, and the temperature and pressure are the same as those of the first experimental conditions; A system for determining etching conditions.

24. The etching condition determination system according to claim 23, If the pattern of change of the classified cases with an increase or decrease in the plurality of values ​​of the temperature changes between the case A, the case D, and the case E, a first conditional expression for the temperature range and the vapor pressure of the substance related to the reaction in the second conditional expression set, which is determined to be true when the temperature at which the predicted vapor pressure of the substance becomes equal to the pressure in the first conditional expression set is smaller than the maximum temperature value in the first conditional expression set for case A; a second conditional expression for the temperature range and the vapor pressure of the substance related to the reaction according to the second set of conditions, the second conditional expression being determined to be true when the temperature at which the predicted vapor pressure of the substance becomes equal to the pressure according to the first set of conditions is smaller than the maximum temperature according to the first set of conditions at which D is achieved; If the first conditional expression and the second conditional expression are both false, As experimental conditions of the second set of conditions, the mixing ratio and pressure of the processing gas are the same as those of the first set of conditions, and the temperature range is set to be equal to or higher than the minimum value of the temperature of the first set of conditions, which is the case of D, and equal to or lower than a temperature at which the predicted vapor pressure of the candidate molecule is equal to the pressure of the first set of conditions plus a margin temperature designated by a user; If the first conditional expression is true and the second conditional expression is false, The second set of experimental conditions includes: The mixing ratio and temperature of the processing gas are equal to those of the first set of conditions, but the pressure is lower than that of the first set of conditions. Alternatively, the mixing ratio of the processing gas is changed from that of the first set of conditions, and the temperature and pressure are the same as those of the first experimental conditions; Alternatively, the mixing ratio and pressure of the processing gas are equal to those of the first set of conditions, and are equal to or lower than the maximum value of the temperature of the first set of conditions, which corresponds to the case D, and are equal to or lower than the minimum value of the temperature of the first set of conditions, which corresponds to the case A. Alternatively, the mixing ratio and pressure of the processing gas are equal to those of the first set of conditions, and the temperature is equal to or higher than the lower limit temperature of the search specified by the user and equal to or lower than the minimum value of the temperature of the first set of conditions, which is the case of A; If the first conditional expression is false and the second conditional expression is true, As experimental conditions of the second set of conditions, the mixing ratio and pressure of the processing gas are equal to those of the first set of conditions, and the temperature range is equal to or greater than the maximum temperature value for the case A and equal to or less than the maximum temperature value of the first set of conditions for the case D, If the first conditional expression is true and the second conditional expression is true, The experimental conditions of the second set of conditions are that the mixing ratio and temperature of the processing gas are equal to those of the first set of conditions, and the pressure is lower than that of the first set of conditions; Alternatively, the mixing ratio of the processing gas is changed from that of the first set of conditions, and the temperature and pressure are the same as those of the first experimental conditions; Alternatively, the mixing ratio and pressure of the processing gas are equal to those of the first set of conditions, and the temperature range is equal to or greater than the maximum temperature value of the first set of conditions, which corresponds to the case A, and equal to or less than the minimum temperature value, which corresponds to the case D. A system for determining etching conditions.

24. The etching condition determination system according to claim 23, When the pattern of change of the classified cases with the increase or decrease of the plurality of values ​​of the temperature changes between the case A, the case C, the case D, and the case E, a first conditional expression for the temperature range and the vapor pressure of the substance related to the reaction in the second conditional expression set, which is determined to be true when the temperature at which the predicted vapor pressure of the substance becomes equal to the pressure in the first conditional expression set is smaller than the maximum temperature value in the first conditional expression set, which corresponds to case C; a second conditional expression for the temperature range and the vapor pressure of the substance related to the reaction in the second set of conditions, the second conditional expression being determined to be true when the temperature at which the predicted vapor pressure of the substance becomes equal to the pressure in the first set of conditions is smaller than the maximum temperature value in the first set of conditions, which corresponds to case D; If the first conditional expression and the second conditional expression are both false, As experimental conditions of the second set of conditions, the mixing ratio and pressure of the processing gas are the same as those of the first set of conditions, and the temperature range is equal to or higher than the minimum value of the temperature in the case of D and equal to or lower than the temperature at which the predicted vapor pressure of the candidate molecule is equal to the pressure of the first set of conditions plus a margin temperature designated by the user; If the first conditional expression is true and the second conditional expression is false, The second set of experimental conditions includes: The mixing ratio and temperature of the processing gas are equal to those of the first set of conditions, but the pressure is lower than that of the first set of conditions. Alternatively, the mixing ratio of the processing gas is changed from that of the first set of conditions, and the temperature and pressure are the same as those of the first experimental conditions; Alternatively, the mixing ratio and pressure of the processing gas are equal to those of the first set of conditions, and are equal to or lower than the maximum temperature value of the first set of conditions, which corresponds to the case D, and are equal to or lower than the minimum temperature value of the first set of conditions, which corresponds to the case C. Alternatively, the mixing ratio and pressure of the processing gas are equal to those of the first set of conditions, and the temperature is equal to or higher than the lower limit temperature of the search specified by the user and equal to or lower than the minimum value of the temperature of the first set of conditions, which is the case C; If the first conditional expression is false and the second conditional expression is true, The experimental conditions of the second set of conditions are set so that the mixing ratio and pressure of the processing gas are equal to those of the first set of conditions, and the temperature range is set so that it is equal to or greater than the maximum temperature value of the first set of conditions, which corresponds to case C, and equal to or less than the maximum temperature value of the first set of conditions, which corresponds to case D, If the first conditional expression is true and the second conditional expression is true, The experimental conditions of the second set of conditions are that the mixing ratio and temperature of the processing gas are equal to those of the first set of conditions, and the pressure is lower than that of the first set of conditions; Alternatively, the mixing ratio of the processing gas is changed from that of the first set of conditions, and the temperature and pressure are the same as those of the first experimental conditions; Alternatively, the mixing ratio and pressure of the processing gas are equal to those of the first set of conditions, and the temperature range is equal to or greater than the maximum temperature value of the first set of conditions, which corresponds to case C, and equal to or less than the minimum temperature value of the first set of conditions, which corresponds to case D. A system for determining etching conditions.

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