Light-emitting device

Abstract

Provided is a light-emitting device which is capable of projecting multiple types of light projection beams, and in which each surface light-emitting element thereof is capable of switching at high speed.　A light-emitting device according to the present technology comprises: a plurality of surface light-emitting elements; and a mounting substrate on which the plurality of surface light-emitting elements are flip-chip mounted. The plurality of surface light-emitting elements include multiple types of surface light-emitting elements. The present technology can provide a light-emitting device which is capable of projecting multiple types of light projection beams, and in which each surface light-emitting element thereof is capable of switching at high speed.

Description

Light-emitting device

[0001] The technology according to the present disclosure (hereinafter also referred to as "the technology") relates to a light-emitting device.

[0002] 2. Description of the Related Art Conventionally, surface-emitting devices such as surface-emitting lasers, light-emitting diodes, and photonic crystal surface-emitting devices are known.

[0003] For example, Patent Documents 1 and 2 disclose a light projection module in which a light emitting section including an active layer and a phase modulation layer is mounted in a junction-up configuration.

[0004] These light projecting modules are capable of projecting multiple types of light beams.

[0005] JP 2019-509823 A JP 2019-509822 A

[0006] However, for example, the light projection modules disclosed in Patent Documents 1 and 2 have room for improvement in terms of enabling high-speed switching of each light-emitting unit.

[0007] Therefore, a main object of the present technology is to provide a light emitting device that can project a plurality of types of projection beams and that enables high-speed switching of each surface light emitting element.

[0008] The present technology provides a light-emitting device comprising: a plurality of surface light-emitting elements; and a mounting substrate on which the plurality of surface light-emitting elements are flip-chip mounted, wherein the plurality of surface light-emitting elements include a plurality of types of surface light-emitting elements. The plurality of surface light-emitting elements may have a common substrate. The plurality of types of surface light-emitting elements may include at least two surface light-emitting elements having different light-emitting principles. The at least two surface light-emitting elements may have different light-emitting patterns. The plurality of types of surface light-emitting elements may include at least two surface light-emitting elements having the same light-emitting principle. The at least two surface light-emitting elements may have different light-emitting patterns. The plurality of types of surface light-emitting elements may include a first surface light-emitting element that is the surface light-emitting element having a photonic crystal layer. The plurality of types of surface light-emitting elements may include a second surface light-emitting element that is the surface light-emitting element without the photonic crystal layer. The plurality of types of surface light-emitting elements may include a plurality of second surface light-emitting elements having different light-emitting principles. The first surface light-emitting element may be a PCSEL. The second surface light-emitting element may be an LED. The second surface light-emitting element may be a VCSEL. The multiple types of surface light emitting elements may include multiple second surface light emitting elements having the same light emitting principle. Each of the multiple second surface light emitting elements may be a VCSEL, or each of the multiple second surface light emitting elements may be an LED. The multiple types of surface light emitting elements may include the surface light emitting element without the photonic crystal layer. The multiple types of surface light emitting elements may include multiple first surface light emitting elements. The multiple first surface light emitting elements may include: the first surface light emitting element in which the photonic crystal layer has a modulation mode; and the first surface light emitting element in which the photonic crystal layer does not have the modulation mode. The multiple first surface light emitting elements may include at least two first surface light emitting elements having different modulation modes. The at least two first surface light emitting elements may include the first surface light emitting element having a flood light emitting mode and the first surface light emitting element having a multi-light emitting point mode. The multiple first surface light emitting elements may have different illumination areas and / or light emitting patterns.

[0009] FIG. 1 is a cross-sectional view of a light-emitting device according to Example 1 of an embodiment of the present technology. FIG. 2 is a plan view of a light-emitting element system of a light-emitting device according to Example 1 of an embodiment of the present technology. FIG. 3 is a diagram showing a state in which a plurality of types of emitted light are emitted from a light-emitting element system of a light-emitting device according to Example 1 of an embodiment of the present technology. FIG. 4 is a flowchart for describing an example of a manufacturing method of a light-emitting device according to Example 1 of an embodiment of the present technology. FIG. 5 is a cross-sectional view of each process of the example of a manufacturing method of a light-emitting device according to Example 1 of an embodiment of the present technology. FIG. 6 is a cross-sectional view of each process of the example of a manufacturing method of a light-emitting device according to Example 1 of an embodiment of the present technology. FIG. 7 is a cross-sectional view of each process of the example of a manufacturing method of a light-emitting device according to Example 1 of an embodiment of the present technology. FIG. 8 is a cross-sectional view of each process of the example of a manufacturing method of a light-emitting device according to Example 1 of an embodiment of the present technology. FIG. 10 is a plan view of a light-emitting element system of a light-emitting device according to Example 2 of an embodiment of the present technology. FIG. 11 is a diagram showing a state in which multiple types of emitted light are emitted from the light-emitting element system of a light-emitting device according to Example 2 of an embodiment of the present technology. FIG. 12 is a cross-sectional view of a light-emitting device according to Example 3 of an embodiment of the present technology. FIG. 13 is a plan view of a light-emitting element system of a light-emitting device according to Example 3 of an embodiment of the present technology. FIG. 14 is a diagram showing a state in which multiple types of emitted light are emitted from the light-emitting element system of a light-emitting device according to Example 3 of an embodiment of the present technology. FIG. 15 is a cross-sectional view of a light-emitting device according to Example 4 of an embodiment of the present technology. FIG. 16 is a diagram showing a state in which multiple types of emitted light are emitted from the light-emitting element system of a light-emitting device according to Example 4 of an embodiment of the present technology. FIG. 17 is a cross-sectional view of a light-emitting device according to Example 5 of an embodiment of the present technology. FIG. 18 is a plan view of a light-emitting element system of a light-emitting device according to Example 5 of an embodiment of the present technology.10 is a diagram showing a state in which a plurality of types of emitted light are emitted from a light-emitting element system of a light-emitting device according to Example 5 of an embodiment of the present technology. FIG. 11 is a cross-sectional view of a light-emitting device according to Example 6 of an embodiment of the present technology. FIG. 12 is a plan view of a light-emitting element system of a light-emitting device according to Example 6 of an embodiment of the present technology. FIG. 13 is a diagram showing a state in which a plurality of types of emitted light are emitted from a light-emitting element system of a light-emitting device according to Example 6 of an embodiment of the present technology. FIG. 14 is a cross-sectional view of a light-emitting device according to Example 7 of an embodiment of the present technology. FIG. 15 is a plan view of a light-emitting element system of a light-emitting device according to Example 7 of an embodiment of the present technology. FIG. 16 is a diagram showing a state in which a plurality of types of emitted light are emitted from a light-emitting element system of a light-emitting device according to Example 7 of an embodiment of the present technology. FIG. 17 is a cross-sectional view of a light-emitting device according to Example 8 of an embodiment of the present technology. FIG. 18 is a plan view of a light-emitting element system of a light-emitting device according to Example 8 of an embodiment of the present technology. FIG. 19 is a cross-sectional view of a light-emitting device according to Example 9 of an embodiment of the present technology. FIG. 19 is a plan view of a light-emitting element system of a light-emitting device according to Example 9 of an embodiment of the present technology. FIG. 19 is a cross-sectional view of a light-emitting device according to Example 10 of an embodiment of the present technology. FIG. 19 is a cross-sectional view of a light-emitting device according to Example 11 of an embodiment of the present technology. FIG. 19 is a plan view of a light-emitting element system of a light-emitting device according to Example 11 of an embodiment of the present technology. Fig. 1 is a cross-sectional view of a light emitting device according to Example 12 of an embodiment of the present technology. Fig. 2 is a plan view of a light emitting element system of a light emitting device according to Example 12 of an embodiment of the present technology. Fig. 3 is a cross-sectional view of a light emitting device according to a modified example of Example 2 of an embodiment of the present technology. Fig. 4 is a diagram showing an example of application of a light emitting device according to Example 1 of an embodiment to a distance measurement device. Fig. 5 is a block diagram showing an example of a schematic configuration of a vehicle control system. Fig. 6 is an explanatory diagram showing an example of an installation position of a distance measurement device.

[0010] Preferred embodiments of the present technology will be described in detail below with reference to the accompanying drawings. Note that in this specification and the drawings, components having substantially the same functional configurations will be denoted by the same reference numerals, and redundant description will be omitted. The embodiments described below illustrate typical embodiments of the present technology, and are not intended to narrow the scope of the present technology. Even when it is described in this specification that a light-emitting device according to the present technology achieves multiple effects, it is sufficient that the light-emitting device according to the present technology achieves at least one effect. The effects described in this specification are merely examples and are not limiting, and other effects may also be achieved.

[0011] The description will be made in the following order: 0. Introduction 1. Light-emitting device according to Example 1 of one embodiment of the present technology 2. Light-emitting device according to Example 2 of one embodiment of the present technology 3. Light-emitting device according to Example 3 of one embodiment of the present technology 4. Light-emitting device according to Example 4 of one embodiment of the present technology 5. Light-emitting device according to Example 5 of one embodiment of the present technology 6. Light-emitting device according to Example 6 of one embodiment of the present technology 7. Light-emitting device according to Example 7 of one embodiment of the present technology 8. Light-emitting device according to Example 8 of one embodiment of the present technology 9. Light-emitting device according to Example 9 of one embodiment of the present technology 10. Light-emitting device according to Example 10 of one embodiment of the present technology 11. Light-emitting device according to Example 11 of one embodiment of the present technology 12. Light-emitting device according to Example 12 of one embodiment of the present technology 13. Modified examples of the present technology 14. Application example to electronic device 15. Example of application of light-emitting device to distance measurement device 16. Example of mounting distance measurement device on a moving body

[0012] <0. Introduction>

[0013] According to benchmarks and market trend reports, the front side of a mobile device such as a smartphone requires an appropriate light projection beam for each sensing application, and thus multiple light projection modules with different types of light projection beams (e.g., multiple light projection chips such as a proximity sensor chip, an STL (Structured Light) light projection chip, and a flood light projection chip) are mounted on the front side of the device. This results in a large area occupied by the modules on the front side of the mobile device. Patent Documents 1 and 2 have proposed solutions to this problem.

[0014] In Patent Document 1, a light-projecting module includes a plurality of light-emitting elements (light-emitting units) integrated on a support substrate, and each light-emitting element has a phase modulation layer designed to produce a desired light-emitting pattern, thereby enabling a single light-projecting module (single light-projecting chip) to project multiple types of projection beams.

[0015] In Patent Document 2, a light-projecting module includes multiple light-emitting mesas (light-emitting portions) within a single chip. Each light-emitting mesa has a phase modulation layer designed to produce a desired light-emitting pattern. This allows multiple types of projection beams to be projected from a single light-projecting module (a single light-projecting chip).

[0016] However, in Patent Documents 1 and 2, wiring is routed from above and below the light-emitting section, which increases the wiring impedance and slows down the switching speed of each light-emitting section. In other words, Patent Documents 1 and 2 leave room for improvement in terms of enabling high-speed switching of each light-emitting section.

[0017] Therefore, after extensive research, the inventors have developed a light emitting device according to the present technology, which is capable of projecting a plurality of types of projection beams and enables high-speed switching of each surface light emitting element.

[0018] Hereinafter, a light emitting device according to an embodiment of the present technology will be described in detail using several examples as examples. In the following, in cross-sectional views such as FIG. 1 , the upper side will be referred to as "up" and the lower side will be referred to as "down" as appropriate.

[0019] 1. Light-emitting device according to Example 1 of an embodiment of the present technology Fig. 1 is a cross-sectional view of a light-emitting device 1 according to Example 1 of an embodiment of the present technology. Fig. 2 is a plan view (view from the mounting substrate 15 side) of a light-emitting element system 10 of the light-emitting device 1 according to Example 1 of an embodiment of the present technology. Fig. 3 is a diagram showing a state in which multiple types of emitted light (projected beams) are emitted (projected) from the light-emitting element system 10 of the light-emitting device 1 according to Example 1 of an embodiment of the present technology.

[0020] <Configuration of Light-Emitting Device> As shown in FIGS. 1 and 2 as an example, a light-emitting device 1 according to Example 1 of an embodiment of the present technology includes a light-emitting element system 10 including a plurality of (e.g., two) surface-emitting elements, and a mounting substrate 15 on which the plurality of surface-emitting elements are flip-chip mounted.

[0021] The multiple (e.g., two) surface light emitting elements of the light emitting element system 10 include multiple types (e.g., two types) of surface light emitting elements. As an example, the multiple types of surface light emitting elements include at least two surface light emitting elements with different light emitting principles. More specifically, the multiple types of surface light emitting elements include a first surface light emitting element that is a surface light emitting element having a photonic crystal layer 106, and a second surface light emitting element that is a surface light emitting element that does not have the photonic crystal layer 106. The first surface light emitting element is, for example, a PCSEL (Photonic Crystal-Surface Emitting Laser). The second surface light emitting element is, for example, an LED (Light Emitting Diode).

[0022] The first and second surface-emitting elements (e.g., PCSEL and LED) are both rear-emitting types. The PCSEL has an oscillation wavelength in the NIR (Near Infrared Ray) band, e.g., 940 nm. The LED has an emission wavelength in the NIR (Near Infrared Ray) band, e.g., 940 nm. The first and second surface-emitting elements (e.g., PCSEL and LED) have different emission patterns (emitted light patterns) (see FIG. 3 ).

[0023] The first and second surface-emitting elements (e.g., PCSEL and LED) share a common substrate 101 and are aligned along the in-plane direction of the substrate 101. Each of the first and second surface-emitting elements emits light toward the side of the substrate 101 opposite the mounting substrate 15. Here, each of the first and second surface-emitting elements has an emission surface on the side of the substrate 101 opposite the mounting substrate 15 (rear surface). It is preferable that an anti-reflection film be provided on the emission surface. The anti-reflection film may have, for example, a layered structure in which multiple dielectric films (e.g., SiO2 film, SiN film, SiON film, etc.) are stacked.

[0024] In the light-emitting element system 10, the first and second surface light-emitting elements (e.g., a PCSEL and an LED) are each bonded to the mounting substrate 15 via bumps. In this manner, the light-emitting element system 10 is electrically and mechanically connected to the mounting substrate 15.

[0025] The mounting substrate 15 is, for example, a substrate (drive substrate) having a driver (drive circuit) or a wiring substrate electrically connected to the driver (drive circuit). Here, the mounting substrate 15 is a drive substrate. The driver of the mounting substrate 15 has, for example, an nMOS (n-type Metal-Oxide-Semiconductor Field-effect Transistor) as a switching element. In particular, by using an nMOS as the switching element, the switching element can be made smaller, leading to a smaller driver and improved design freedom. Note that the driver may have a pMOS (p-type Metal-Oxide-Semiconductor Field-effect Transistor) instead of an nMOS.

[0026] As an example, the light-emitting element system 10 shares the substrate 101 with the first and second surface-emitting elements (e.g., a PCSEL and an LED), and further includes two dummy elements DE arranged to sandwich the surface-emitting element pair including the first and second surface-emitting elements in the in-plane direction of the substrate 101, an anode electrode 111 provided on the surface of each surface-emitting element facing the mounting substrate 15, and a cathode wiring 113 partially provided on the surface of each dummy element DE facing the mounting substrate 15. The dummy elements DE are also called "non-light-emitting elements."

[0027] In a PCSEL serving as a first surface-emitting element, for example, an active layer 104 and a photonic crystal layer 106 are stacked on top of each other (for example, arranged close to each other in the stacking direction). The active layer 104 and the photonic crystal layer 106 form a light-emitting section. Here, the active layer 104 is arranged on the substrate 101 side (upper side, for example, the n-side) of the photonic crystal layer 106, but the active layer 104 may also be arranged on the opposite side of the photonic crystal layer 106 from the substrate 101 side (lower side, for example, the p-side). Note that electrical characteristics are improved when the active layer 104 is arranged on the n-side of the photonic crystal layer 106 compared to when it is arranged on the p-side.

[0028] As an example, the PCSEL as the first surface-emitting element has first and second cladding layers 103 and 107 that sandwich a light-emitting section including an active layer 104 and a photonic crystal layer 106. The first cladding layer 103 is disposed on the substrate 101 side (upper side) of the light-emitting section, and the second cladding layer 107 is disposed on the opposite side of the light-emitting section from the substrate 101 side (lower side).

[0029] In the PCSEL as the first surface-emitting element, a resonator is configured including, for example, an active layer 104 , a photonic crystal layer 106 , and first and second clad layers 103 and 107 .

[0030] The PCSEL as the first surface-emitting element further includes a first contact layer 102 arranged on the substrate 101 side (upper side) of the resonator, a reflector 108 arranged on the opposite side of the resonator from the substrate 101 side (lower side), and a second contact layer 109 arranged on the opposite side of the reflector 108 from the resonator side (lower side).

[0031] That is, in the PCSEL as the first surface-emitting element, a first contact layer 102, a first cladding layer 103, an active layer 104, a photonic crystal layer 106, a second cladding layer 107, a reflecting mirror 108, and a second contact layer 109 are arranged in this order on a substrate 101.

[0032] As an example, the LED serving as the second surface light-emitting element has the same layer structure as the PCSEL serving as the first surface light-emitting element, except that it has a base material 106BM of the photonic crystal layer 106 instead of the photonic crystal layer 106. The LED serving as the second surface light-emitting element emits a diffused beam with a wide emission angle (see FIG. 3 ). Therefore, the LED serving as the second surface light-emitting element is a light source suitable for sensing (object detection) over a relatively wide range and at close range.

[0033] The PCSEL as the first surface light emitting element has a light emitting mesa LM including at least a part (for example, the whole) of the resonator. PCSEL Here, the light emitting mesa LM PCSEL is provided on the first contact layer 102 and includes a first cladding layer 103, an active layer 104, a photonic crystal layer 106, a second cladding layer 107, a reflecting mirror 108, and a second contact layer 109. PCSEL Here, the shape of the cylindrical portion is cylindrical, but it may be a truncated cone, an elliptical cylinder, an elliptical truncated cone, a polygonal pillar, a polygonal truncated pyramid, or the like.

[0034] The LED as the second surface light emitting element has a light emitting mesa LM. LED Here, the light emitting mesa LM LED is provided on the first contact layer 102 and includes a first cladding layer 103, an active layer 104, a base material 106BM of the photonic crystal layer 106, a second cladding layer 107, a reflecting mirror 108, and a second contact layer 109. LED Here, the shape of the cylindrical portion is cylindrical, but it may be a truncated cone, an elliptical cylinder, an elliptical truncated cone, a polygonal pillar, a polygonal truncated pyramid, or the like.

[0035] Luminous Mesa LM PCSEL and light-emitting mesa LM LED may be of the same diameter or of different diameters.

[0036] Each dummy element DE has the same layer structure as an LED serving as a second surface-emitting element. Each dummy element DE has a dummy mesa DM. The dummy mesa DM is also called a "non-emitting mesa" or "pedestal." Here, the dummy mesa DM protrudes from the first contact layer 102 and includes a first cladding layer 103, an active layer 104, a base material 106BM of the photonic crystal layer 106, a second cladding layer 107, a reflecting mirror 108, and a second contact layer 109.

[0037] Luminous Mesa LM PCSEL , Light-emitting mesa LM LED The dummy mesas DM are covered with an insulating film 110. As an example, the insulating film 110 does not cover the center of the top (second contact layer 109) of each light-emitting mesa, and an anode electrode 111 (p-side electrode) is provided on this center. As an example, the insulating film 110 does not cover the portion of the first contact layer 102 between each surface-emitting element and the dummy element DE, and a cathode electrode 112 (n-side intermediate electrode) is provided on this portion. A cathode wiring 113 for cathode pull-up is provided along the dummy mesa DM covered with the insulating film 110. One end of the cathode wiring 113 contacts the cathode electrode 112, a middle portion is provided on the side surface of the dummy mesa DM via the insulating film 110, and the other end is provided on the top of the dummy mesa DM via the insulating film 110.

[0038] That is, the light-emitting element system 10 has an intra-cavity structure in which the anode electrode 111, the cathode electrode 112, and the cathode wiring 113 are provided on the same surface (lower surface) of the substrate 101. The light-emitting element system 10 has an electrode layout in which the anodes are independent and the cathodes are common for the first and second surface-emitting elements (e.g., PCSEL and LED), and the first and second surface-emitting elements can be driven independently.

[0039] (Substrate) The substrate 101 is, for example, a semiconductor substrate containing impurities, a semi-insulating substrate (e.g., a semiconductor substrate containing no impurities), or the like. Here, the substrate 101 is made of GaAs. In order to reduce light absorption, the substrate 101 is preferably made of, for example, lightly doped GaAs (n-GaAs or p-GaAs), SI (Semi-Insulating)-GaAs, or the like. Furthermore, the substrate 101 is preferably transparent to the emission wavelength of the active layer 104.

[0040] (First Contact Layer) The first contact layer 102 is, for example, an Al layer of a first conductivity type (for example, n-type). x0 Ga 1-x0 The first contact layer 102 is made of As (0≦x0<1), for example, n-GaAs. The first contact layer 102 contains n-type impurities such as silicon (Si). The first contact layer 102 not only makes ohmic contact between the first cladding layer 103 and the cathode electrode 112, but also functions as a current diffusion layer that allows current to reach the center of the surface-emitting device.

[0041] (First Cladding Layer) The first cladding layer 103 is, for example, an Al layer of a first conductivity type (for example, n-type). x1 Ga 1-x1 The first cladding layer 103 is made of As (0≦x1<1). The cladding layer is also called a “spacer layer.” The first cladding layer 103 contains an n-type impurity such as silicon (Si).

[0042] (Active Layer) The active layer 104 has, for example, a quantum well structure including a barrier layer and a well layer made of a GaAs-based compound semiconductor. x2 Ga 1-x2 A well layer made of As (0<x2<1) and undoped In x3 Ga 1-x3 The active layer 104 has a multiple quantum well structure (MQW structure) in which barrier layers made of As (0<x3<1) are alternately stacked. Instead of the multiple quantum well structure, the active layer 104 may have a single quantum well structure (QW structure), a quantum dot structure, a quantum wire structure, or the like. The emission wavelength of the active layer 104 is, for example, 935 nm. The active layer is also called an "emitting layer."

[0043] (Photonic Crystal Layer) The photonic crystal layer 106 provides a photonic crystal resonance and diffraction effect to the light emitted from the active layer 104 adjacent in the stacking direction.

[0044] The photonic crystal layer 106 includes, for example, a base portion 106b that is a part of a plate-shaped base material 106BM, and a modified refractive index periodic structure 106a (photonic crystal) arranged on the base portion 106b. In the modified refractive index periodic structure 106a, modified refractive index areas are arranged periodically (for example, in a two-dimensional lattice pattern) along the in-plane direction of the base portion 106b. The modified refractive index areas are, for example, holes (air or vacuum). The modified refractive index periodic structure 106a generates a periodic refractive index distribution in the photonic crystal layer 106. In the photonic crystal layer 106, the period of the modified refractive index areas (for example, the spacing between lattice points, the lattice constant, and the spacing between holes) is, for example, the same as or close to the emission wavelength of the active layer 104. The material of the base material 106BM is, for example, Al. x5 Ga 1-x5 The modified refractive index periodic structure 106 a is preferably, but not limited to, GaAs (0≦x5<1), for example. Here, the modified refractive index periodic structure 106 a is provided at a position corresponding to the central part in the plane of the active layer 104, but may be provided at a position corresponding to the entire area in the plane of the active layer 104.

[0045] Due to the presence of the periodic refractive index distribution described above, light of a specific wavelength (e.g., the oscillation wavelength) forms a two-dimensional standing wave state in a specific direction within the photonic crystal plane within the photonic crystal layer 106. In the photonic crystal layer 106, diffraction occurs not only in directions parallel to the photonic crystal plane but also in directions perpendicular thereto, allowing a beam with a narrow exit angle to be emitted in a direction intersecting the in-plane direction (e.g., perpendicular to the plane), thereby providing a surface emission output.

[0046] The photonic crystal layer 106 has a modulation mode in which the periodicity of the modified refractive index periodic structure 106a (photonic crystal) is modulated. This modulation mode makes it possible to control the intensity and emission direction of the beam compared to a non-modulation mode in which the periodicity of the modified refractive index periodic structure is constant. The periodicity of the modified refractive index periodic structure 106a is modulated, for example, by changing the pitch and / or diameter of the holes that make up the modified refractive index region.

[0047] Here, the emitted light EL from the PCSEL as the first surface light emitting element PCSEL The periodicity of the modified refractive index periodic structure 106a is modulated so that the light beam includes a plurality of narrow-angle beams arranged radially in a fan shape (see FIG. 3).

[0048] The PCSEL may have a multi-emitting point mode for performing high-density irradiation (multi-spot irradiation or multi-dot irradiation). The PCSEL may have a flood emission mode for performing ultra-high-density irradiation (flood irradiation, which is multi-beam irradiation in which beams with different polarization directions are partially overlapped). When the PCSEL has the multi-emitting point mode or the flood emission mode, it becomes a light source particularly suitable for STL (structured light).

[0049] (Second Cladding Layer) The second cladding layer 107 is, for example, an AlN layer of a second conductivity type (for example, p-type). x6 Ga 1-x6 The second cladding layer 107 is made of As (0≦x6<1). The cladding layer is also called a “spacer layer.” The second cladding layer 107 contains p-type impurities such as carbon (C).

[0050] (Reflector) Reflector 108 is provided to reflect light emitted from the light emitting section including active layer 104 and photonic crystal layer 106 to the opposite side (lower side) from substrate 101 toward substrate 101 (upper side) and use it as emitted light (to improve light utilization efficiency). In this way, reflector 108 is provided to improve efficiency and is not essential.

[0051] The reflecting mirror 108 is, for example, a semiconductor multilayer reflecting mirror. A multilayer reflecting mirror is also called a distributed Bragg reflector. More specifically, the reflecting mirror 108 is, for example, a second conductivity type (for example, p-type) semiconductor multilayer reflecting mirror, and has a structure in which a plurality of types (for example, two types) of semiconductor layers having different refractive indices are alternately stacked with an optical thickness of ¼ wavelength of the emission wavelength. Each refractive index layer of the reflecting mirror 108 is made of an AlGaAs-based compound semiconductor of the second conductivity type (for example, p-type). Specifically, the reflecting mirror 108 has a low refractive index layer made of, for example, p-Al x7 Ga1-x7 As (0<x7<1), and the high refractive index layer is, for example, p-Al x8 Ga 1-X8 As (0≦x8<x7).

[0052] (Second Contact Layer) The second contact layer 109 is, for example, an Al layer of a second conductivity type (for example, p-type). x9 Ga 1-x9 The second contact layer 109 is made of As (0≦x9<1), for example, p-GaAs. The second contact layer 109 contains a p-type impurity such as carbon (C). The second contact layer 109 is a layer for making ohmic contact between the reflecting mirror 108 and the anode electrode 111.

[0053] (Insulating Film) The insulating film 110 is made of a dielectric material such as SiN, SiO2, SiON, etc. In particular, when the insulating film 110 is made of SiN, it contributes to suppressing the penetration of moisture from the outside.

[0054] (Anode Electrode) The anode electrode 111 is, for example, configured to include a non-alloy metal film. Specifically, the anode electrode 111 has a laminated structure in which, for example, a Ti layer and an Au layer are laminated in this order from the second contact layer 109 side. Note that the anode electrode 111 may further have a Pt layer laminated on the Au layer to improve solderability. The anode electrode 111 is electrically connected to the anode terminal 15b of the mounting substrate 15 via a first bump B1.

[0055] The cathode electrode 112 serving as an n-side intermediate electrode is, for example, made of an alloy. Specifically, the cathode electrode 112 has a layered structure in which, for example, an AuGe layer, a Ni layer, and an Au layer are layered in this order from the first contact layer 102 side.

[0056] (Cathode Wiring) The cathode wiring 113 is made of, for example, Au plating, Ag plating, Al plating, etc. The thickness of the cathode wiring 113 is preferably a thickness that can sufficiently suppress voltage drop. The cathode wiring 113 is electrically connected to the cathode terminal 15c of the mounting substrate 15 via the second bump B2.

[0057] (Bumps) Each of the first and second bumps B1 and B2 is a conductive bump having electrical conductivity, and is made of a metal such as Ag, Au, Cu, or Ni, or a Pb-free solder such as AgSn, AuSn, CuSn, NiSn, or CuNiSn.

[0058] (Mounting Substrate) The mounting substrate 15 (e.g., a driving substrate) includes, as an example, a semiconductor substrate 15a (e.g., a p-type semiconductor substrate), an nMOS (PCSEL driving nMOS) provided on the semiconductor substrate 15a that can drive (switch) a PCSEL serving as a first surface light-emitting element, an nMOS (LED driving nMOS) that can drive (switch) an LED serving as a second surface light-emitting element, a gate voltage control unit, and a current source. Each nMOS has a source connected to the anode terminal 15b of the mounting substrate 15, a drain connected to the anode of the current source, and a gate voltage (pulse voltage) applied to each gate from the gate voltage control unit. When a gate voltage (pulse voltage) is applied to the PCSEL driving nMOS, it generates a driving pulse (current pulse) that turns on / off the PCSEL serving as the first surface light-emitting element. When a gate voltage (pulse voltage) is applied to the LED driving nMOS, it generates a driving pulse (current pulse) that turns on / off the LED serving as the second surface light-emitting element. The gate voltage control unit controls the gate voltage parameters (e.g., pulse width and repetition frequency) to control the drive pulse parameters (e.g., pulse width and repetition frequency). The current source may be a constant current source or a variable current source, but a variable current source is preferable because the current value is variable and the intensity (pulse amplitude) of the drive pulse can be adjusted. Examples of the semiconductor substrate 15a include a Si substrate, a Ge substrate, an SOI substrate, and a GOI substrate.

[0059] <<Operation of Light-Emitting Device>> The following describes the operation of the light-emitting device 1. In the light-emitting device 1, at least one of the PCSEL driving nMOS and the LED driving nMOS is selectively driven as needed, so that at least one of the PCSEL and the LED can be selectively made to emit light.

[0060] (Driving the PCSEL) When a gate voltage (pulse voltage) is applied to the PCSEL driving nMOS, a current from the anode side of the current source connected to the drain of the PCSEL driving nMOS generates a current pulse in the PCSEL driving nMOS, and a current (pulse current) is applied to the PCSEL. The current applied to the PCSEL is injected into the active layer 104 via the anode electrode 111, the second contact layer 109, the reflecting mirror 108, the second cladding layer 107, and the photonic crystal layer 106, in this order. At this time, the active layer 104 emits light, and the light forms a standing wave in the in-plane direction within the photonic crystal layer 106. When the resonance condition is satisfied, the light is emitted from the photonic crystal layer 106 toward the substrate 101 and toward the opposite side from the substrate 101. The light emitted toward the substrate 101 is directly emitted from the back surface of the substrate 101 as laser light (e.g., multiple narrow-angle beams arranged in a fan-shaped radial pattern) (see FIG. 3 ). The light emitted toward the opposite side to the substrate 101 is reflected by the reflecting mirror 108 toward the substrate 101 and emitted from the rear surface of the substrate 101 as laser light (e.g., multiple narrow-angle beams arranged in a fan-shaped radial pattern) (see FIG. 3 ). The pulse width and repetition frequency of the current pulse can be adjusted by controlling the gate voltage with the gate voltage control unit, and the intensity of the current pulse can be adjusted by controlling the current value with the current source (in the case of a variable current source). The current that passes through the active layer 104 flows through the first cladding layer 103, the first contact layer 102, the cathode electrode 112, and the cathode wiring 113, in this order, to the cathode side of the current source connected to the PCSEL driving nMOS.

[0061] (Driving the LED) When a gate voltage (pulse voltage) is applied to the LED driving nMOS, a current pulse is generated in the LED driving nMOS by a current from the anode side of the current source connected to the LED driving nMOS, and a current (pulse current) is applied to the LED. The current applied to the LED is injected into the active layer 104 via the anode electrode 111, the second contact layer 109, the reflecting mirror 108, the second cladding layer 107, and the base material 106BM of the photonic crystal layer 106, in this order. At this time, the active layer 104 emits light, and light is emitted from the active layer 104 toward the substrate 101 and toward the opposite side from the substrate 101. The light emitted toward the substrate 101 is then emitted as diffused light due to spontaneous emission from the back surface of the substrate 101 (see FIG. 3 ). The light emitted in the direction opposite to the substrate 101 is reflected by the reflecting mirror 108 toward the substrate 101 and is emitted as diffused light due to spontaneous emission from the rear surface of the substrate 101 (see FIG. 3). At this time, the pulse width and repetition frequency of the current pulse can be adjusted by controlling the gate voltage with the gate voltage control unit, and the intensity of the current pulse can be adjusted by controlling the current value with the current source (in the case of a variable current source). The current that has passed through the active layer 104 flows through the first cladding layer 103, the first contact layer 102, the cathode electrode 112, and the cathode wiring 113 in this order, and is then output to the cathode side of the current source connected to the LED driving nMOS.

[0062] <<Method for Manufacturing Light-Emitting Device>> A method for manufacturing the light-emitting device 1 will be described below with reference to the flowchart in FIG. 4 and the like. The overall flow is as follows: first, a semiconductor manufacturing method using semiconductor manufacturing equipment is used to simultaneously produce a plurality of light-emitting element systems 10 on a single wafer (hereinafter referred to as "substrate 101" for convenience) that is the base material of the substrate 101. Next, the plurality of light-emitting element systems 10 that are connected together are separated from each other by dicing (e.g., stealth dicing) to obtain chip-shaped light-emitting element systems 10. Finally, the light-emitting element systems 10 are flip-chip mounted on a mounting substrate 15.

[0063] In the first step S1, a stack is formed (see FIG. 5). Specifically, a stack is formed by stacking a first contact layer 102, a first cladding layer 103, an active layer 104, and a base material 106BM of the photonic crystal layer 106 in this order on a substrate 101 (e.g., an n-GaAs substrate, an SI-GaAs substrate, etc.) using an epitaxial crystal growth method such as MOCVD (Metal Organic Chemical Vapor Deposition). Methyl-based organometallic gases such as trimethylaluminum (TMAl), trimethylgallium (TMGa), and trimethylindium (TMIn) and arsine (AsH) gas are used as compound semiconductor raw materials. Disilane (SiH) is used as a donor impurity raw material, and carbon tetrabromide (CBr) is used as an acceptor impurity raw material.

[0064] In the next step S2, the photonic crystal layer 106 is formed (see FIG. 6 ). Specifically, a resist pattern for forming the modified refractive index periodic structure 106a of the photonic crystal layer 106 is formed on the stack (on the base material 106BM of the photonic crystal layer 106) by photolithography, and the base material 106BM is etched to a predetermined depth using the resist pattern as a mask, thereby forming the modified refractive index periodic structure 106a on the base portion 106b. At this time, it is preferable to use RIE (Reactive Ion Etching) using, for example, a Cl-based gas. The resist pattern is then removed.

[0065] In the next step S3, second cladding layer 107, reflecting mirror 108, and second contact layer 109 are laminated (see FIG. 7). Specifically, second cladding layer 107, reflecting mirror 108, and second contact layer 109 are laminated in this order by another epitaxial growth on the laminate (see FIG. 6) on which photonic crystal layer 106 has been formed.

[0066] In the next step S4, the light emitting mesa LM PCSEL , Light-emitting mesa LM LED and each dummy mesa DM is formed (see FIG. 8). Specifically, the light emitting mesa LM is formed on the stack (see FIG. 7) by photolithography. PCSEL , Light-emitting mesa LMLED A resist pattern for forming each dummy mesa DM is formed, and the stacked body is etched by dry etching or wet etching using the resist pattern as a mask. The etching depth here is set to, for example, until the first contact layer 102 is exposed. Thereafter, the resist pattern is removed.

[0067] In the next step S5, the anode electrode 111 and the cathode electrode 112 are formed (see FIG. 9 ). Specifically, the anode electrode 111 is formed on the center of the top of each light-emitting mesa (more specifically, the second contact layer 109) by, for example, a lift-off method. The cathode electrode 112 is formed on the region of the first contact layer 102 between the region where each light-emitting mesa protrudes and the region where the dummy mesa DM adjacent to the light-emitting mesa protrudes, by, for example, a lift-off method. The electrode materials for the anode electrode 111 and the cathode electrode 112 are formed by, for example, evaporation, sputtering, or the like.

[0068] In the next step S6, the insulating film 110 is formed (see FIG. 10 ). Specifically, first, the insulating film 110 is formed over the entire surface of the stack (see FIG. 9 ) on which the anode electrode 111 and the cathode electrode 112 are formed, for example, by CVD (Chemical Vapor Deposition), sputtering, evaporation, or the like. Next, the insulating film 110 covering the anode electrode 111 and the cathode electrode 112 is removed by photolithography and etching to expose the anode electrode 111 and the cathode electrode 112.

[0069] Alternatively, instead of steps S5 and S6, an insulating film 110 may be formed before the anode electrode 111 and the cathode electrode 112 are formed on the laminate, and contact holes for forming the anode electrode 111 and the cathode electrode 112 may be formed in the insulating film 110, and electrodes corresponding to each contact hole may be formed by, for example, lift-off.

[0070] In the next step S7, the cathode wiring 113 is formed (see FIG. 11 ). Specifically, the cathode wiring 113 is formed by, for example, plating so that one end contacts the cathode electrode 112, the other end covers the top of the dummy mesa DM via the insulating film 110, and the middle part covers the side of the dummy mesa DM via the insulating film 110. Note that, prior to plating, it is preferable to form a seed layer in the area to be plated.

[0071] Thereafter, the substrate 101 is diced to obtain a plurality of chip-shaped light-emitting element systems 10. If necessary, before dicing, the back surface of the substrate 101 is ground using, for example, a grinder, a CMP (Chemical Mechanical Polisher) device, or the like to thin the substrate 101. If necessary, before dicing, an anti-reflection film is formed on the back surface of the substrate 101 by, for example, sputtering, vapor deposition, or the like.

[0072] In the final step S8, flip-chip mounting is performed (see FIGS. 12 and 13). Specifically, first, first bumps B1 are attached to each anode terminal 15b of the mounting substrate 15, and second bumps B2 are attached to each cathode terminal 15c (see FIG. 12). Next, the light-emitting element system 10 and the mounting substrate 15 are aligned so that the anode electrodes 111 on each light-emitting mesa face the corresponding first bumps B1 and the cathode wirings 113 on each dummy mesa DM face the corresponding second bumps B2 (see FIG. 12). Next, the light-emitting element system 10 and the mounting substrate 15 are thermocompression bonded (bonded by applying pressure while heating) via the first and second bumps B1 and B2. As a result, the light-emitting element system 10 and the mounting substrate 15 are electrically and mechanically connected via the first and second bumps B1 and B2 (see FIG. 13).

[0073] In step S8, each bump is attached to the mounting substrate 15 side during bump bonding, but each bump may also be attached to the light-emitting element system 10 side, or bumps (of the same material or different materials) may be attached to both the mounting substrate 15 side and the light-emitting element system 10 side.

[0074] <Effects of Light-Emitting Device> Effects of the light-emitting device 1 according to Example 1 of an embodiment of the present technology will be described below.

[0075] The light emitting device 1 includes a plurality of surface light emitting elements and a mounting substrate 15 on which the plurality of surface light emitting elements are flip-chip mounted. The plurality of surface light emitting elements include a plurality of types of surface light emitting elements (for example, PCSELs and LEDs).

[0076] In the light emitting device 1, multiple types of surface light emitting elements are flip-chip mounted on the mounting substrate, so that multiple types of projection beams can be projected and the wiring impedance can be reduced.

[0077] As a result, the light emitting device 1 can provide a light emitting device that can project a plurality of types of projection beams and that can switch each surface light emitting element at high speed.

[0078] Furthermore, since the light emitting device 1 can integrate multiple types of surface light emitting elements on one chip, it can achieve smaller size, lower costs, faster response, and lower power consumption compared to when multiple types of surface light emitting element chips are provided.

[0079] Furthermore, in the light emitting device 1, the plurality of surface light emitting elements share the same substrate 101 (e.g., a growth substrate), so that the plurality of surface light emitting elements can be produced collectively, and the plurality of surface light emitting elements can be flip-chip mounted collectively on the mounting substrate 15. In other words, the light emitting device 1 has excellent productivity.

[0080] The light emitting device 1 described above has a small occupied area and is capable of switching multiple types of surface light emitting elements at high speed, and is therefore expected to be applicable to, for example, the front side of a mobile device.

[0081] 2. Light-emitting device according to Example 2 of an embodiment of the present technology> Fig. 14 is a cross-sectional view of a light-emitting device 2 according to Example 2 of an embodiment of the present technology. Fig. 15 is a plan view (view seen from the mounting substrate 15 side) of a light-emitting element system 20 of the light-emitting device 2 according to Example 2 of an embodiment of the present technology. Fig. 16 is a diagram showing a state in which multiple types of emitted light are emitted from the light-emitting element system 20 of the light-emitting device 2 according to Example 2 of an embodiment of the present technology.

[0082] As shown in Figures 14 and 15, the light-emitting device 2 of Example 2 has a configuration generally similar to that of the light-emitting device 1 of Example 1, except that the second surface-emitting element of the light-emitting element system 20 is a VCSEL, and the light-emitting element system 20 has multiple (e.g., two) first and second surface-emitting elements.

[0083] The light emitting device 2 includes multiple types of surface light emitting elements, including at least two surface light emitting elements with different light emitting principles, for example, a PCSEL as a first surface light emitting element and a VCSEL (Vertical Cavity Surface Emitting Laser) as a second surface light emitting element. The light emitting device 2 includes, for example, two PCSELs and two VCSELs.

[0084] In the light emitting device 2, at least one of the plurality of PCSELs and the plurality of VCSELs can be selectively made to emit light as needed.

[0085] Each of the plurality of PCSELs has the same modulation mode as the PCSEL of the light emitting device 1 according to Example 1, and has the same light emission pattern (emission light pattern) (see FIG. 16 ). At least one of the plurality of PCSELs may have a multi-light emitting point mode or a flood light emission mode.

[0086] Each of the multiple VCSELs has a reflector 114 provided on the back surface (the surface opposite to the mounting substrate 15) of the substrate 101. Examples of the reflector 114 include a GaAs-based semiconductor multilayer film reflector and a dielectric multilayer film reflector.

[0087] Each VCSEL is connected to a VCSEL driving nMOS, and when a driving pulse is applied from the VCSEL driving nMOS, laser oscillation occurs, and emitted light EL with a relatively narrow emission angle as stimulated emission light (laser light). VCSEL (See FIG. 16 ). Each VCSEL can be applied to metasurface-on-VCSEL. Each VCSEL is suitable as a light source for a proximity sensor, for example.

[0088] According to the light emitting device 2, the light emitting element system 20, in which a plurality of PCSELs and a plurality of VCSELs are integrated on one chip, is flip-chip mounted on the mounting substrate 15, which provides excellent productivity and allows high-speed switching of the plurality of PCSELs and a plurality of VCSELs.

[0089] In the light emitting device 2, the light emitting mesas of the PCSEL and the VCSEL may have the same diameter or different diameters (for example, the VCSEL may have a smaller diameter than the PCSEL). In the light emitting device 2, for example, there may be only one PCSEL or one VCSEL, or there may be three or more PCSELs or one VCSEL.

[0090] The light emitting device 2 described above can be mounted on the front side of a mobile device, for example. In this case, the PCSEL is suitable as a light source for STL (structured light), and the VCSEL is suitable as a light source for a proximity sensor such as a proximity sensor.

[0091] 17 is a cross-sectional view of a light emitting device 3 according to a third example of an embodiment of the present technology. Fig. 18 is a plan view (view seen from the mounting substrate 15 side) of a light emitting element system 30 of the light emitting device 3 according to the third example of an embodiment of the present technology. Fig. 19 is a diagram showing a state in which a plurality of types of emitted light are emitted from the light emitting element system 30 of the light emitting device 3 according to the third example of an embodiment of the present technology.

[0092] The light-emitting device 3 of Example 3 has a configuration generally similar to that of the light-emitting device 2 of Example 2, except that, as shown in Figures 17 and 18, a plurality of (e.g., six) VCSELs are provided in a two-dimensional array as second surface light-emitting elements in the light-emitting element system 30.

[0093] The light emitting device 3 includes multiple types of surface light emitting elements, each of which has a different light emitting principle, such as a PCSEL as a first surface light emitting element and a VCSEL (Vertical Cavity Surface Emitting Laser: VCSEL) as a second surface light emitting element. The light emitting device 2 includes, for example, two PCSELs and, for example, six VCSELs. The VCSELs serving as the second surface light emitting elements have the same light emitting principle.

[0094] In the light emitting device 3, at least one of the plurality of PCSELs and the plurality of VCSELs can be selectively made to emit light as needed.

[0095] Each of the plurality of PCSELs has the same modulation mode as the PCSEL of the light emitting device 1 according to Example 1, and has the same light emission pattern (emission light pattern) (see FIG. 19 ). At least one of the plurality of PCSELs may have a multi-light emitting point mode or a flood light emission mode.

[0096] Each of the multiple VCSELs has a reflector 114 provided on the back surface (the surface opposite to the mounting substrate 15) of the substrate 101. Examples of the reflector 114 include a GaAs-based semiconductor multilayer film reflector and a dielectric multilayer film reflector.

[0097] Each VCSEL is connected to a VCSEL driving nMOS, and when a driving pulse is applied from the VCSEL driving nMOS, laser oscillation occurs, and emitted light EL with a relatively narrow emission angle as stimulated emission light (laser light). VCSEL (See FIG. 19). Each VCSEL can be applied to a metasurface-on-VCSEL. A plurality of VCSELs constituting a two-dimensional VCSEL array is suitable as a light source for a TOF (Time Of Flight) camera, for example.

[0098] According to the light emitting device 3, the light emitting element system 30 in which a plurality of PCSELs and a plurality of VCSELs are integrated on one chip is flip-chip mounted on the mounting substrate 15, which provides excellent productivity and allows high-speed switching of the plurality of PCSELs and a plurality of VCSELs.

[0099] Furthermore, the light emitting device 3 has a two-dimensional VCSEL array, which allows for multi-point emission over a wider area.

[0100] In the light emitting device 3, the light emitting mesas of the PCSEL and VCSEL may have the same diameter or different diameters (for example, the VCSEL may have a smaller diameter than the PCSEL). In the light emitting device 3, for example, there may be only one PCSEL or three or more PCSELs, and there may be three to five VCSELs, or seven or more VCSELs.

[0101] The light emitting device 3 described above can be mounted on the front side of a mobile device, for example. In this case, the PCSEL is suitable as a light source for STL (structured light), and the VCSEL is suitable as a light source for a TOF camera.

[0102] 4. Light-emitting device according to Example 4 of an embodiment of the present technology> Fig. 20 is a cross-sectional view of a light-emitting device 4 according to Example 4 of an embodiment of the present technology. Fig. 21 is a plan view (view seen from the mounting substrate 15 side) of a light-emitting element system 40 of the light-emitting device 4 according to Example 4 of an embodiment of the present technology. Fig. 22 is a diagram showing a state in which multiple types of emitted light are emitted from the light-emitting element system 40 of the light-emitting device 4 according to Example 4 of an embodiment of the present technology.

[0103] As shown in Figures 20 and 21, the light-emitting device 4 of Example 4 has a configuration that is generally similar to that of the light-emitting device 1 of Example 1, except that the light-emitting element system 40 has multiple (e.g., two) PCSELs as first surface-emitting elements and does not have a second surface-emitting element.

[0104] The light emitting device 4 includes multiple types of surface light emitting elements, including at least two surface light emitting elements with the same light emitting principle, for example, PCSEL1 as a first surface light emitting element and PCSEL2 as a second surface light emitting element. PCSEL1 is a modulated PCSEL that has a modulation mode. PCSEL2 is an unmodulated PCSEL that does not have a modulation mode. PCSEL1 and PCSEL2 have different light emitting patterns (emitted light patterns).

[0105] In the light emitting device 4, at least one of PCSEL1 and PCSEL2 can be selectively made to emit light as needed.

[0106] The PCSEL1 has the same modulation mode as the PCSEL of the light emitting device 1 according to the first embodiment, and emits the emitted light EL PCSEL1 The light emission patterns are the same (see FIG. 22). In this case, PCSEL1 may have a multi-light emission point mode or a flood light emission mode.

[0107] The PCSEL2 emits multiple narrow emission angle beams (wide beams overall) whose emission directions (principal ray directions) coincide with the substrate normal direction (see FIG. 22 ). In this case, the PCSEL2 may have a multi-emission point mode or a flood emission mode.

[0108] Each of PCSEL1 and PCSEL2 may have a multi-light-emitting point mode or a flood light-emitting mode.

[0109] One of PCSEL1 and PCSEL2 may have the multi-light-emitting point mode, and the other may have the flood light-emitting mode.

[0110] According to the light emitting device 4, the light emitting element system 40 in which PCSEL1 and PCSEL2 are integrated on one chip is flip-chip mounted on the mounting substrate 15, which provides excellent productivity and allows high-speed switching of PCSEL1 and PCSEL2.

[0111] Furthermore, the light emitting device 4 has only a PCSEL as a light source, so no external optical elements are required, which allows for miniaturization and cost reduction.

[0112] In the light emitting device 4, the light emitting mesas of PCSEL1 and PCSEL2 may have the same diameter or different diameters. In the light emitting device 4, for example, there may be a plurality of at least one of PCSEL1 and PCSEL2.

[0113] The light emitting device 4 described above can be mounted on the front side of a mobile device, for example. In this case, PCSEL1 is suitable as a light source for STL (structured light), and PCSEL2 is suitable as a light source for a TOF camera or a proximity sensor.

[0114] 5. Light-emitting device according to example 5 of an embodiment of the present technology> Fig. 23 is a cross-sectional view of a light-emitting device 5 according to example 5 of an embodiment of the present technology. Fig. 24 is a plan view (view seen from the mounting substrate 15 side) of a light-emitting element system 50 of the light-emitting device 5 according to example 5 of an embodiment of the present technology. Fig. 25 is a diagram showing a state in which the same type of emitted light is emitted from the light-emitting element system 50 of the light-emitting device 5 according to example 5 of an embodiment of the present technology.

[0115] As shown in Figures 23 and 24, the light-emitting device 5 of Example 5 has a configuration that is generally similar to that of the light-emitting device 1 of Example 1, except that the light-emitting element system 50 has multiple PCSELs as first-surface light-emitting elements and does not have a second-surface light-emitting element.

[0116] The light emitting device 5 includes a plurality of types of surface light emitting elements, including at least two surface light emitting elements having the same light emitting principle, for example, PCSEL1-A as a first surface light emitting element and PCSEL1-B as a second surface light emitting element. PCSEL1-A and PCSEL1-B are PCSELs having different modulation modes and different light emission patterns (emission light patterns).

[0117] In the light emitting device 5, it is possible to selectively cause at least one of a plurality of (for example, two) PCSELs to emit light as necessary.

[0118] PCSEL1-A is, for example, an emitted light EL PCSEL1-A The pattern shown in FIG. 25 constitutes the center of the fan-shaped radial irradiation area. PCSEL1-A may have a multi-light-emitting point mode or a flood light-emitting mode.

[0119] PCSEL1-B is, for example, an emitted light EL PCSEL1-B The pattern shown in FIG. 25 constitutes the periphery of the fan-shaped radial irradiation area. PCSEL1-B may have a multi-light-emitting point mode or a flood light-emitting mode.

[0120] Each of PCSEL1-A and PCSEL1-B may have a multi-light-emitting point mode or a flood light-emitting mode.

[0121] One of PCSEL1-A and PCSEL1-B may have the multi-light-emitting point mode, and the other may have the flood light-emitting mode.

[0122] As described above, in the light emitting device 5, the emitted light from PCSEL1-A and PCSEL1-B can be directed to different irradiation areas, and further, the light emission modes can be made different between the irradiation areas.

[0123] According to the light emitting device 5, the light emitting element system 50 in which PCSEL1-A and PCSEL1-B are integrated on one chip is flip-chip mounted on the mounting substrate 15, which provides excellent productivity and enables high-speed switching of PCSEL1-A and PCSEL1-B.

[0124] Furthermore, according to the light emitting device 5, it is possible to configure one irradiation pattern by combining the emitted light patterns of a plurality of modulated PCSELs, thereby enabling STL (structured light) with higher resolution.

[0125] Furthermore, the light emitting device 5 has only a PCSEL as a light source, so no external optical element is required, which allows for miniaturization and cost reduction.

[0126] In the light-emitting device 5, the light-emitting mesas of PCSEL1-A and PCSEL1-B may have the same diameter or different diameters. The light-emitting device 5 may have three or more PCSELs having different modulation modes. In this case, for example, a fan-shaped radial irradiation area may be divided among three or more PCSELs.

[0127] The light emitting device 5 described above can be mounted on the rear side of a mobile device, for example. In this case, PCSEL1-A and PCSEL1-B are suitable as light sources for a ToF camera, for example.

[0128] 6. Light-emitting device according to Example 6 of an embodiment of the present technology> Fig. 26 is a cross-sectional view of a light-emitting device 6 according to Example 6 of an embodiment of the present technology. Fig. 27 is a plan view (view seen from the mounting substrate 15 side) of a light-emitting element system 60 of the light-emitting device 6 according to Example 6 of an embodiment of the present technology. Fig. 28 is a diagram showing a state in which the same type of emitted light is emitted from the light-emitting element system 60 of the light-emitting device 6 according to Example 6 of an embodiment of the present technology.

[0129] As shown in Figures 26 and 27, the light-emitting device 6 of Example 6 has a configuration that is generally similar to the light-emitting device 1 of Example 1, except that the light-emitting element system 60 has multiple PCSELs as first-surface light-emitting elements and does not have a second-surface light-emitting element.

[0130] The light emitting device 6 includes multiple types of surface light emitting elements, and at least two surface light emitting elements having the same light emitting principle, for example, PCSEL2a and PCSEL2b as first surface light emitting elements. PCSEL2a and PCSEL2b are both unmodulated PCSELs that do not have a modulation mode, and have different sizes and light emission patterns (emission light patterns).

[0131] The diameter of PCSEL2b is smaller than that of PCSEL2a.

[0132] In the light emitting device 6, at least one of a plurality of (for example, two) PCSELs 2a and 2b can be selectively made to emit light as necessary.

[0133] The PCSEL2a is, for example, an emitted light EL PCSEL2a The pattern (a) is a wide pattern including many narrow emission angle beams whose emission direction coincides with the normal direction of the substrate (see FIG. 28). In this case, the PCSEL 2a may have a multi-emission point mode or a flood emission mode.

[0134] The PCSEL2b is, for example, an emitted light EL PCSEL2b The pattern (a) is a narrow pattern including a small number of narrow emission angle beams whose emission direction coincides with the normal direction of the substrate (see FIG. 28). In this case, the PCSEL 2b may have a multi-emission point mode or a flood emission mode.

[0135] Each of PCSEL2a and PCSEL2b may have a multi-light-emitting point mode or a flood light-emitting mode.

[0136] One of PCSEL2a and PCSEL2b may have the multi-light-emitting point mode, and the other may have the flood light-emitting mode.

[0137] According to the light emitting device 6, the light emitting element system 60 in which a plurality of unmodulated PCSELs are integrated on one chip is flip-chip mounted on the mounting substrate 15, which provides excellent productivity and allows high-speed switching of a plurality of unmodulated PCSELs.

[0138] Furthermore, since the light emitting device 6 can emit light beams with different beam widths, it is possible to selectively cause at least one of the plurality of unmodulated PCSELs to emit light for each application.

[0139] The light emitting device 6 may have three or more unmodulated PCSELs, at least two of which have different diameters of unmodulated pixels.

[0140] The light emitting device 6 described above can be mounted on the front side of a mobile device, for example. In this case, each PCSEL 2 is suitable as a polarized light source for a healthcare watch, for example.

[0141] 7. Light-emitting device according to Example 7 of an embodiment of the present technology> Fig. 29 is a cross-sectional view of a light-emitting device 7 according to Example 7 of an embodiment of the present technology. Fig. 30 is a plan view (view seen from the mounting substrate 15 side) of a light-emitting element system 70 of the light-emitting device 7 according to Example 7 of an embodiment of the present technology. Fig. 31 is a diagram showing a state in which multiple types of emitted light are emitted from the light-emitting element system 70 of the light-emitting device 7 according to Example 7 of an embodiment of the present technology.

[0142] As shown in Figures 29 and 30, the light-emitting device 7 of Example 7 has a configuration that is generally similar to that of the light-emitting device 1 of Example 1, except that the light-emitting element system 70 has multiple second-surface light-emitting elements and does not have a first-surface light-emitting element.

[0143] The light emitting device 7 includes a plurality of types of surface light emitting elements, each of which has a different light emitting principle, such as an LED as a second surface light emitting element and a VCSEL as a second surface light emitting element. The LED and the VCSEL have different light emitting patterns (emission light patterns).

[0144] In the light emitting device 7, at least one of the LED and the VCSEL can be selectively made to emit light as needed.

[0145] The LED emits light EL, for example. LED The pattern shown in FIG. 31 is a beam pattern with a relatively wide emission angle.

[0146] The VCSEL emits, for example, an EL VCSEL The pattern is a beam pattern with a relatively narrow emission angle (see FIG. 31).

[0147] According to the light emitting device 7, the light emitting element system 70 in which the LED and the VCSEL are integrated on a single chip is flip-chip mounted on the mounting substrate 15, which provides excellent productivity and allows high-speed switching of each of the LED and the VCSEL.

[0148] In the light emitting device 7, the light emitting mesas of the LED and the VCSEL may have the same diameter or different diameters (for example, the VCSEL may have a smaller diameter than the LED). The light emitting device 7 may include a plurality of LEDs and / or VCSELs.

[0149] The light emitting device 7 described above can be mounted on the front side of a mobile device, for example. In this case, the LED and VCSEL are suitable as light sources for a TOF camera or a proximity sensor.

[0150] 32 is a cross-sectional view of a light emitting device 8 according to Example 8 of an embodiment of the present technology. Fig. 33 is a plan view (view seen from the mounting substrate 15 side) of a light emitting element system 80 of the light emitting device 8 according to Example 8 of an embodiment of the present technology.

[0151] The light-emitting device 8 of Example 8 has a configuration generally similar to that of the light-emitting device 1 of Example 1, except that the light-emitting element system 80 has multiple first surface-emitting elements and multiple second surface-emitting elements, as shown in Figures 32 and 33.

[0152] The light-emitting device 8 includes multiple types of surface-emitting elements, including three types of surface-emitting elements with different light-emitting principles, for example, a PCSEL as a first surface-emitting element, an LED as a second surface-emitting element, and a VCSEL as the second surface-emitting element. Here, multiple PCSELs (e.g., two), multiple LEDs (e.g., two), and multiple VCSELs (e.g., four) are provided. The multiple PCSELs may all be modulated PCSELs or all may be unmodulated PCSELs. The VCSELs serving as the second surface-emitting elements have the same light-emitting principle. The LEDs serving as the second surface-emitting elements have the same light-emitting principle.

[0153] PCSEL, LED, and VCSEL have different light emission patterns (emitted light patterns).

[0154] In the light emitting device 8, at least one of at least one of the types of PCSEL, LED, and VCSEL can be selectively made to emit light as needed.

[0155] According to the light-emitting device 8, the light-emitting element system 80, in which a plurality of PCSELs, a plurality of LEDs, and a plurality of VCSELs are integrated on one chip, is flip-chip mounted on the mounting substrate 15, which provides excellent productivity and enables high-speed switching of each PCSEL, each LED, and each VCSEL.

[0156] In the light emitting device 8, the light emitting mesas of the PCSEL, LED, and VCSEL may have the same diameter or different diameters (for example, the VCSEL has the smallest diameter). The light emitting device 8 may have only one of at least one type of PCSEL, LED, or VCSEL, or may have three or more of at least one of PCSELs and LEDs, or may have two, three, five or more VCSELs.

[0157] The light-emitting device 8 described above can be mounted on the front side of a mobile device, for example. In this case, the PCSEL is suitable as a light source for STL (structured light), and the VCSEL and LED are suitable as light sources for a TOF camera or a proximity sensor.

[0158] 34 is a cross-sectional view of a light emitting device 9 according to Example 9 of an embodiment of the present technology. Fig. 35 is a plan view (view viewed from the mounting substrate 15 side) of a light emitting element system 90 of the light emitting device 9 according to Example 9 of an embodiment of the present technology.

[0159] The light emitting device 9 of Example 9 has a configuration generally similar to that of the light emitting device 1 of Example 1, except that the light emitting element system 90 has multiple first surface light emitting elements and multiple second surface light emitting elements, as shown in Figures 34 and 35.

[0160] The light-emitting device 9 includes multiple types of surface-emitting elements, including three types of surface-emitting elements with different light-emitting principles, such as a PCSEL as a first surface-emitting element, an LED as a second surface-emitting element, and a VCSEL as the second surface-emitting element. Here, multiple PCSELs (e.g., four), multiple LEDs (e.g., two), and multiple VCSELs (e.g., two) are provided. The multiple PCSELs include, for example, two modulated PCSELs PCSEL1 and two unmodulated PCSELs PCSEL2.

[0161] In the light emitting device 9, it is possible to selectively cause at least one of at least one of the types of PCSEL1, PCSEL2, LED, and VCSEL to emit light as necessary.

[0162] According to the light emitting device 9, a light emitting element system 80 in which a plurality of PCSEL1, a plurality of PCSEL2, a plurality of LEDs, and a plurality of VCSELs are integrated into one chip is flip-chip mounted on the mounting substrate 15, which provides excellent productivity and enables high-speed switching of each PCSEL1, each PCSEL2, each LED, and each VCSEL.

[0163] In the light emitting device 9, the light emitting mesas of PCSEL1, PCSEL2, the LED, and the VCSEL may have the same diameter or different diameters (for example, the VCSEL may have the smallest diameter). The light emitting device 9 may have only one of each type of at least one of PCSEL1, PCSEL2, the LED, and the VCSEL, or may have three or more of each type of at least one of PCSEL1, PCSEL2, the LED, and the VCSEL.

[0164] The light-emitting device 9 described above can be mounted on the front side of a mobile device, for example. In this case, PCSEL1 and PCSEL2 are suitable as light sources for STL (structured light), and VCSELs and LEDs are suitable as light sources for TOF cameras and proximity sensors.

[0165] 36 is a cross-sectional view of a light emitting device 10.5 according to Example 10 of an embodiment of the present technology. Fig. 37 is a plan view (view from the mounting substrate 15 side) of a light emitting element system 1199 of the light emitting device 10.5 according to Example 10 of an embodiment of the present technology.

[0166] The light-emitting device 10.5 of Example 10 has a configuration generally similar to that of the light-emitting device 1 of Example 1, except that, as shown in Figures 36 and 37, multiple surface-emitting elements (e.g., PCSELs and LEDs) of the light-emitting element system 119 have a mesare-less structure.

[0167] In the light emitting device 10.5, a plurality of surface light emitting elements (e.g., PCSELs and LEDs) are arranged in a series, and an ion implantation region IIA is provided as an insulating region between the plurality of surface light emitting elements in a portion other than the substrate 101 and the first contact layer 102. Examples of ion species in the ion implantation region IIA include H+ and B+.

[0168] According to the light emitting device 10.5, substantially the same effects as those of the light emitting device 1 according to the first embodiment can be obtained.

[0169] 38 is a cross-sectional view of a light emitting device 11 according to Example 11 of an embodiment of the present technology. Fig. 39 is a plan view (view viewed from the mounting substrate 15 side) of a light emitting element system 129 of the light emitting device 11 according to Example 11 of an embodiment of the present technology.

[0170] The light-emitting device 11 of Example 11 has a configuration generally similar to that of the light-emitting device 2 of Example 2, except that the light-emitting device system 129 has one first surface-emitting element and multiple (e.g., five) ultra-small second surface-emitting elements, as shown in Figures 38 and 39.

[0171] In the light emitting device 11, one first surface light emitting element is a PCSEL (a modulated PCSEL or an unmodulated PCSEL).

[0172] In the light emitting device 11, the plurality of second surface light emitting elements are a plurality of (for example, five) VCSELs arranged in a one-dimensional array. Each VCSEL has a diameter significantly smaller than that of a PCSEL.

[0173] The light emitting device 11 can provide the same effects as the light emitting device 2 according to the second embodiment, and can also be made smaller and less expensive.

[0174] 40 is a cross-sectional view of a light emitting device 12 according to Example 12 of an embodiment of the present technology. Fig. 41 is a plan view (view viewed from the mounting substrate 15 side) of a light emitting element system 120 of the light emitting device 12 according to Example 12 of an embodiment of the present technology.

[0175] The light-emitting device 12 of Example 12 has a configuration generally similar to that of the light-emitting device 3 of Example 3, except that the light-emitting device system 120 has one first surface-emitting element and multiple (e.g., 40) ultra-small second surface-emitting elements, as shown in Figures 40 and 41.

[0176] In the light emitting device 12, one first surface light emitting element is a PCSEL (a modulated PCSEL or an unmodulated PCSEL).

[0177] In the light emitting device 12, the plurality of second surface light emitting elements are a plurality of (for example, 40) VCSELs arranged in a two-dimensional array. Each VCSEL has a diameter significantly smaller than that of a PCSEL.

[0178] According to the light emitting device 12, the same effects as those of the light emitting device 3 according to the third embodiment can be obtained, and the size and cost can be reduced.

[0179] 13. Modifications of the present technology

[0180] The present technology is not limited to the examples of the above-described embodiment, and various modifications are possible.

[0181] For example, as in a light emitting device 2M according to a modification of the second embodiment shown in FIG. 42, a light emitting mesa LM of a photonic crystal surface light emitting device 20M VCSEL The light-emitting mesa LM of the photonic crystal surface light-emitting device 20M may have a reflecting mirror 114. VCSELIn the photonic crystal surface light emitting device 20M, a first cladding layer 103, an active layer 104, a second cladding layer 107, a reflecting mirror 108, and a second contact layer 109 are arranged in this order on a reflecting mirror 114 (for example, a GaAs-based semiconductor multilayer film reflecting mirror) arranged on a first contact layer 102. VCSEL may be formed by selective epitaxial growth, or may be formed in the form of a chip and then bonded to the first contact layer 102 .

[0182] For example, in the above-mentioned embodiments and variant examples, a photonic crystal surface-emitting laser has been used as an example of a photonic crystal surface-emitting element of a light-emitting device according to the present technology, but the present technology can also be applied to, for example, a photonic crystal surface-emitting diode (resonant or non-resonant type).

[0183] For example, at least two of the plurality of surface light emitting elements do not need to share a substrate.

[0184] For example, in each of the above embodiments and modified examples, a semiconductor multilayer film reflector is used as the reflector, but this is not limited to this. For example, a dielectric multilayer film reflector or a hybrid mirror in which at least two of a semiconductor multilayer film reflector, a dielectric multilayer film reflector, and a metal reflector are stacked may also be used.

[0185] For example, in each of the above-described embodiments and modified examples, the photonic crystal surface light-emitting element is made of a material that is lattice-matched to GaAs (GaAs-based compound semiconductor), but this is not limited thereto, and for example, a material that is lattice-matched to InP (InP-based compound semiconductor) or a material that is lattice-matched to GaN (GaN-based compound semiconductor) may also be used.

[0186] For example, the conductivity types of the layers on both sides of the active layer 104 of the photonic crystal surface light emitting element of the light emitting device according to each of the above examples and modifications may be reversed. In this case, reference numeral 112 is the anode electrode, reference numeral 113 is the anode wiring, and reference numeral 111 is the cathode electrode.

[0187] At least one of the first and second contact layers 102 and 109 may not be provided.

[0188] One of the first and second cladding layers 103 and 107 may not be provided. In this case, the semiconductor multilayer film reflecting mirror serving as the reflecting mirror 108 may also serve as the one of the cladding layers.

[0189] The reflecting mirror 108 may not be provided.

[0190] The dummy element DE does not have to be provided.

[0191] For example, in the above-described embodiments and modifications, MOSFETs are used as switching elements of the drivers, but other field effect transistors such as junction FETs or bipolar transistors may also be used.

[0192] For example, the photonic crystal surface light emitting element of the light emitting device according to the present technology may have a multi-junction structure in which two or more active layers 104 are stacked. In this case, it is preferable that a tunnel junction layer is disposed between the active layers 104 adjacent to each other in the stacking direction.

[0193] Parts of the configurations of the light emitting devices of the above-described embodiments and modifications may be combined within a range that does not contradict each other.

[0194] In each of the above embodiments and modifications, the material, conductivity type, thickness, width, numerical value, shape, size, etc. of each layer constituting the light emitting device can be changed as appropriate within the range that allows the light emitting device to function.

[0195] 14. Application Examples to Electronic Devices The technology according to the present disclosure (the present technology) can be applied to various products (electronic devices). For example, the technology according to the present disclosure may be realized as a device mounted on any type of moving body such as an automobile, an electric vehicle, a hybrid electric vehicle, a motorcycle, a bicycle, personal mobility, an airplane, a drone, a ship, a robot, or a low-power device (for example, a smartphone, a smartwatch, a tablet, a mouse, a laptop computer, or the like), or as a communication device.

[0196] The light emitting device according to the present technology can also be applied as a light source for devices that form or display images using laser light (for example, laser printers, laser copiers, projectors, head-mounted displays, head-up displays, etc.).

[0197] 15. Example of Application of Light Emitting Device to Distance Measuring Device An application example of the light emitting device 1 according to the first embodiment will be described below.

[0198] 43 illustrates an example of a schematic configuration of a distance measurement device 1000 (distance measuring device) including a light emitting device 1, as an example of an electronic device according to the present technology. The distance measurement device 1000 measures the distance to a subject S by a TOF (Time Of Flight) method. The distance measurement device 1000 includes the light emitting device 1. The distance measurement device 1000 includes, for example, the light emitting device 1, a light receiving device 125, a lens 130, a signal processing unit 145, a control unit 155, a display unit 165, and a storage unit 170.

[0199] The light receiving device 125 receives light emitted from the light emitting device 1 and reflected by the subject S (object). That is, the light receiving device 125 detects the light reflected by the subject S. The lens 130 is a lens, such as a condenser lens, that collects the light reflected by the subject S and guides it to the light receiving device 125.

[0200] The signal processing unit 145 is a circuit for generating a signal corresponding to the difference between the signal input from the light-receiving device 125 and the reference signal input from the control unit 155. The control unit 155 is configured to include, for example, a time-to-digital converter (TDC). The reference signal may be a signal input from the control unit 155 or an output signal from a detection unit that directly detects the output of the light-emitting device 1. The control unit 155 is, for example, a processor that controls the light-emitting device 1, the light-receiving device 125, the signal processing unit 145, the display unit 165, and the storage unit 170. The control unit 155 is a circuit that measures the distance to the subject S based on the signal generated by the signal processing unit 145. The control unit 155 generates a video signal for displaying information about the distance to the subject S and outputs it to the display unit 165. The display unit 165 displays the information about the distance to the subject S based on the video signal input from the control unit 155. The control unit 155 stores the information about the distance to the subject S in the storage unit 170.

[0201] In this application example, instead of the light emitting device 1, any one of the light emitting devices 2, 3, 4, 5, 6, 7, 8, 9, 10, 5, 11, and 12 can also be applied to the distance measuring device 1000.

[0202] 16. Example of Mounting Distance Measuring Device on a Moving Body FIG. 44 is a block diagram showing a schematic configuration example of a vehicle control system, which is an example of a moving body control system to which the technology according to the present disclosure can be applied.

[0203] The vehicle control system 12000 includes a plurality of electronic control units connected via a communication network 12001. In the example shown in Fig. 44, the vehicle control system 12000 includes a drive system control unit 12010, a body system control unit 12020, an outside-vehicle information detection unit 12030, an inside-vehicle information detection unit 12040, and an integrated control unit 12050. Also shown as functional components of the integrated control unit 12050 are a microcomputer 12051, an audio / video output unit 12052, and an in-vehicle network I / F (interface) 12053.

[0204] The drivetrain control unit 12010 controls the operation of devices related to the drivetrain of the vehicle in accordance with various programs. For example, the drivetrain control unit 12010 functions as a control device for a drive force generating device for generating a drive force of the vehicle, such as an internal combustion engine or a drive motor, a drive force transmission mechanism for transmitting the drive force to the wheels, a steering mechanism for adjusting the steering angle of the vehicle, and a braking device for generating a braking force of the vehicle.

[0205] The body system control unit 12020 controls the operation of various devices equipped in the vehicle body according to various programs. For example, the body system control unit 12020 functions as a control device for a keyless entry system, a smart key system, a power window device, or various lamps such as headlamps, backup lamps, brake lamps, turn signals, and fog lamps. In this case, radio waves transmitted from a portable device that serves as a key or signals from various switches can be input to the body system control unit 12020. The body system control unit 12020 receives these radio waves or signals and controls the vehicle's door lock device, power window device, lamps, etc.

[0206] The outside-vehicle information detection unit 12030 detects information outside the vehicle equipped with the vehicle control system 12000. For example, a distance measurement device 12031 is connected to the outside-vehicle information detection unit 12030. The distance measurement device 12031 includes the above-described distance measurement device 1000. The outside-vehicle information detection unit 12030 causes the distance measurement device 12031 to measure the distance to an object outside the vehicle (subject S) and acquires the distance data obtained thereby. The outside-vehicle information detection unit 12030 may perform object detection processing for people, cars, obstacles, signs, etc. based on the acquired distance data.

[0207] The in-vehicle information detection unit 12040 detects information inside the vehicle. For example, a driver state detection unit 12041 that detects the state of the driver is connected to the in-vehicle information detection unit 12040. The driver state detection unit 12041 includes, for example, a camera that captures an image of the driver, and the in-vehicle information detection unit 12040 may calculate the degree of fatigue or concentration of the driver based on the detection information input from the driver state detection unit 12041, or may determine whether the driver is dozing off.

[0208] The microcomputer 12051 can calculate control target values ​​for the driving force generating device, steering mechanism, or braking device based on the information inside and outside the vehicle acquired by the outside-vehicle information detection unit 12030 or the inside-vehicle information detection unit 12040, and output control commands to the drive system control unit 12010. For example, the microcomputer 12051 can perform cooperative control aimed at realizing the functions of an ADAS (Advanced Driver Assistance System), including vehicle collision avoidance or impact mitigation, following driving based on the inter-vehicle distance, vehicle speed maintenance driving, vehicle collision warning, vehicle lane departure warning, etc.

[0209] In addition, the microcomputer 12051 can perform cooperative control for the purpose of autonomous driving, which allows the vehicle to travel autonomously without relying on driver operation, by controlling the driving force generating device, steering mechanism, braking device, etc. based on information about the surroundings of the vehicle obtained by the outside vehicle information detection unit 12030 or the inside vehicle information detection unit 12040.

[0210] Furthermore, the microcomputer 12051 can output a control command to the body system control unit 12020 based on the information outside the vehicle acquired by the outside information detection unit 12030. For example, the microcomputer 12051 can control the headlamps according to the position of a preceding vehicle or an oncoming vehicle detected by the outside information detection unit 12030, and perform cooperative control aimed at preventing glare, such as switching from high beams to low beams.

[0211] The audio / video output unit 12052 transmits at least one of audio and video output signals to an output device capable of visually or audibly notifying information to vehicle occupants or the outside of the vehicle. In the example of Fig. 44, the output devices are exemplified by an audio speaker 12061, a display unit 12062, and an instrument panel 12063. The display unit 12062 may include, for example, at least one of an on-board display and a head-up display.

[0212] FIG. 45 is a diagram showing an example of the installation position of the distance measurement device 12031.

[0213] In FIG. 45, a vehicle 12100 has distance measurement devices 12101, 12102, 12103, 12104, and 12105 as a distance measurement device 12031.

[0214] Distance measuring devices 12101, 12102, 12103, 12104, and 12105 are provided, for example, at positions such as the front nose, side mirrors, rear bumper, back door, and the top of the windshield inside the vehicle cabin of vehicle 12100. Distance measuring device 12101 provided on the front nose and distance measuring device 12105 provided on the top of the windshield inside the vehicle cabin mainly acquire data ahead of vehicle 12100. Distance measuring devices 12102 and 12103 provided on the side mirrors mainly acquire data on the sides of vehicle 12100. Distance measuring device 12104 provided on the rear bumper or back door mainly acquires data behind vehicle 12100. The forward data acquired by distance measuring devices 12101 and 12105 is mainly used to detect preceding vehicles, pedestrians, obstacles, traffic lights, traffic signs, etc.

[0215] 45 shows an example of the detection ranges of the distance measuring devices 12101 to 12104. Detection range 12111 indicates the detection range of the distance measuring device 12101 provided on the front nose, detection ranges 12112 and 12113 indicate the detection ranges of the distance measuring devices 12102 and 12103 provided on the side mirrors, respectively, and detection range 12114 indicates the detection range of the distance measuring device 12104 provided on the rear bumper or back door.

[0216] For example, based on the distance data obtained from the distance measuring devices 12101 to 12104, the microcomputer 12051 can calculate the distance to each three-dimensional object within the detection ranges 12111 to 12114 and the change in this distance over time (relative speed with respect to the vehicle 12100), thereby extracting as a preceding vehicle, in particular, the three-dimensional object that is the closest three-dimensional object on the path of the vehicle 12100 and traveling in approximately the same direction as the vehicle 12100 at a predetermined speed (e.g., 0 km / h or higher). Furthermore, the microcomputer 12051 can set a vehicle-to-vehicle distance to be maintained in advance in front of the preceding vehicle, and perform automatic braking control (including follow-up stop control), automatic acceleration control (including follow-up start control), etc. In this way, cooperative control can be performed for the purpose of autonomous driving, which runs autonomously without relying on driver operation.

[0217] For example, based on the distance data obtained from the distance measuring devices 12101 to 12104, the microcomputer 12051 classifies and extracts three-dimensional object data regarding three-dimensional objects into two-wheeled vehicles, ordinary vehicles, large vehicles, pedestrians, utility poles, and other three-dimensional objects, and can use the data for automatic obstacle avoidance. For example, the microcomputer 12051 distinguishes obstacles around the vehicle 12100 into obstacles that are visible to the driver of the vehicle 12100 and obstacles that are difficult to see. The microcomputer 12051 then determines the collision risk, which indicates the risk of collision with each obstacle, and when the collision risk is equal to or greater than a set value and a collision is possible, the microcomputer 12051 can provide driving assistance for collision avoidance by outputting an alarm to the driver via the audio speaker 12061 or the display unit 12062, or by performing forced deceleration or avoidance steering via the drive system control unit 12010.

[0218] The above describes an example of a mobile object control system to which the technology according to the present disclosure can be applied. The technology according to the present disclosure can be applied to the distance measurement device 12031 of the above-described configuration.

[0219] The present technology may also be configured as follows. (1) A light-emitting device comprising: a plurality of surface-emitting elements; and a mounting substrate on which the plurality of surface-emitting elements are flip-chip mounted, wherein the plurality of surface-emitting elements include a plurality of types of surface-emitting elements. (2) The light-emitting device according to (1), wherein the plurality of surface-emitting elements have a common substrate. (3) The light-emitting device according to any one of (1) or (2), wherein the plurality of types of surface-emitting elements include at least two surface-emitting elements having different light-emitting principles. (4) The light-emitting device according to (3), wherein the at least two surface-emitting elements have different light-emitting patterns. (5) The light-emitting device according to any one of (1) to (4), wherein the plurality of types of surface-emitting elements include at least two surface-emitting elements having the same light-emitting principle. (6) The light-emitting device according to (5), wherein the at least two surface-emitting elements have different light-emitting patterns. (7) The light-emitting device according to any one of (1) to (6), wherein the plurality of types of surface-emitting elements includes a first surface-emitting element that is the surface-emitting element having a photonic crystal layer. (8) The light-emitting device according to any one of (1) to (7), wherein the plurality of types of surface-emitting elements includes a second surface-emitting element that is the surface-emitting element without the photonic crystal layer. (9) The light-emitting device according to (8), wherein the plurality of types of surface-emitting elements includes a plurality of the second surface-emitting elements having different light-emitting principles. (10) The light-emitting device according to any one of (7) to (9), wherein the first surface-emitting element is a PCSEL. (11) The light-emitting device according to any one of (8) to (10), wherein the second surface-emitting element is an LED. (12) The light-emitting device according to any one of (8) to (10), wherein the second surface-emitting element is a VCSEL. (13) The light-emitting device according to any one of (8) to (12), wherein the plurality of types of surface-emitting elements includes a plurality of the second surface-emitting elements having the same light-emitting principle. (14) The light-emitting device according to (13), wherein each of the plurality of second surface-emitting elements is a VCSEL or each of the plurality of second surface-emitting elements is an LED. (15) The light emitting device according to any one of (1) to (14), wherein the plurality of types of surface light emitting elements include the surface light emitting element not having the photonic crystal layer. (16) The light emitting device according to any one of (7) to (15), wherein the plurality of types of surface light emitting elements include a plurality of the first surface light emitting elements.(17) The light-emitting device according to (16), wherein the plurality of first surface-emitting elements include: a first surface-emitting element in which the photonic crystal layer has a modulation mode; and a first surface-emitting element in which the photonic crystal layer does not have the modulation mode. (18) The light-emitting device according to (16) or (17), wherein the plurality of first surface-emitting elements include at least two first surface-emitting elements having different modulation modes. (19) The light-emitting device according to (18), wherein the at least two first surface-emitting elements include: a first surface-emitting element having a flood emission mode; and a first surface-emitting element having a multi-emission-point mode. (20) The light-emitting device according to any one of (16) to (19), wherein the plurality of first surface-emitting elements have different illumination regions and / or emission patterns. (21) An electronic device comprising a light-emitting device, comprising: a plurality of surface-emitting elements; and a mounting substrate on which the plurality of surface-emitting elements are flip-chip mounted, wherein the plurality of surface-emitting elements include multiple types of surface-emitting elements.

[0220] 1, 2, 3, 4, 5, 6, 7, 8, 9, 10.5, 11, 12: Light-emitting device 15: Mounting substrate 101: Substrate PCSEL (surface light-emitting element, first surface light-emitting element) PCSEL1 (surface light-emitting element, first surface light-emitting element) PCSEL1-A (surface light-emitting element, first surface light-emitting element) PCSEL1-B (surface light-emitting element, first surface light-emitting element) PCSEL2 (surface light-emitting element, first surface light-emitting element) PCSEL2a (surface light-emitting element, first surface light-emitting element) PCSEL2b (surface light-emitting element, first surface light-emitting element) LED (surface light-emitting element, second surface light-emitting element) VCSEL (surface light-emitting element, second surface light-emitting element)

Claims

1. A light emitting device comprising: a plurality of surface light emitting elements; and a mounting substrate on which the plurality of surface light emitting elements are flip-chip mounted, wherein the plurality of surface light emitting elements include a plurality of types of surface light emitting elements.

2. The light emitting device according to claim 1, wherein the plurality of surface light emitting elements have a common substrate.

3. The light emitting device according to claim 1, wherein the plurality of types of surface light emitting elements include at least two surface light emitting elements having different light emitting principles.

4. The light emitting device according to claim 3, wherein the at least two surface light emitting elements have different light emitting patterns.

5. The light emitting device according to claim 1, wherein the plurality of types of surface light emitting elements include at least two surface light emitting elements having the same light emitting principle.

6. The light emitting device according to claim 5, wherein the at least two surface light emitting elements have different light emitting patterns.

7. The light emitting device according to claim 1, wherein the plurality of types of surface light emitting elements include a first surface light emitting element that is the surface light emitting element having a photonic crystal layer.

8. The light emitting device according to claim 7, wherein the plurality of types of surface light emitting elements include a second surface light emitting element that is a surface light emitting element that does not have the photonic crystal layer.

9. The light emitting device according to claim 8, wherein the plurality of types of surface light emitting elements include a plurality of the second surface light emitting elements having different light emitting principles.

10. The light emitting device according to claim 7, wherein the first surface light emitting element is a PCSEL.

11. The light emitting device according to claim 8, wherein the second surface light emitting element is an LED.

12. The light emitting device according to claim 8, wherein the second surface light emitting element is a VCSEL.

13. The light emitting device according to claim 8, wherein the plurality of types of surface light emitting elements include a plurality of the second surface light emitting elements having the same light emitting principle.

14. The light emitting device according to claim 13, wherein each of the plurality of second surface light emitting elements is a VCSEL, or each of the plurality of second surface light emitting elements is an LED.

15. The light emitting device according to claim 1, wherein the plurality of types of surface light emitting elements include a surface light emitting element that does not have the photonic crystal layer.

16. The light emitting device according to claim 7, wherein the plurality of types of surface light emitting elements include a plurality of the first surface light emitting elements.

17. The light-emitting device according to claim 16, wherein the plurality of first surface-emitting elements include: a first surface-emitting element in which the photonic crystal layer has a modulation mode; and a first surface-emitting element in which the photonic crystal layer does not have the modulation mode.

18. The light emitting device according to claim 16, wherein the plurality of first surface light emitting elements includes at least two of the first surface light emitting elements having different modulation modes.

19. The light emitting device according to claim 18, wherein the at least two first surface light emitting elements include: the first surface light emitting element having a flood light emitting mode; and the first surface light emitting element having a multi-light emitting point mode.

20. The light emitting device according to claim 16, wherein the plurality of first surface light emitting elements have different illumination areas and / or light emission patterns.

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