Plasma processing system and substrate processing system

Abstract

This plasma processing system comprises a plasma processing module, a transport module, and a control device. The plasma processing module includes a plasma processing chamber, a substrate support part, an inner ring disposed so as to surround the substrate, and an outer ring disposed so as to surround the inner ring. The transport module includes a transport chamber and a transport robot disposed inside the transport chamber. The transport robot includes an end effector that moves between the plasma processing chamber and the transport chamber, and a distance sensor attached to the end effector. The control device controls the transport robot so as to continuously execute a first measurement operation for measuring a first consumption amount of the inner ring on the basis of a first recipe, and a second measurement operation for measuring a second consumption amount of the outer ring on the basis of a second recipe different from the first recipe.

Description

Plasma processing system and substrate processing system

[0001] The present disclosure relates to a plasma processing system and a substrate processing system.

[0002] Patent Document 1 discloses a substrate processing system including a substrate holder, a substrate processing apparatus, a substrate transport mechanism, a distance sensor, and a control device. Patent Document 1 discloses that in the substrate processing system, the distance sensor measures the distance to a reference surface and the distance to an annular member, and the control device estimates the height of the annular member based on the measurement results of the distance to the reference surface and the distance to the annular member.

[0003] Japanese Patent Application Laid-Open No. 2022-174626

[0004] The present disclosure provides a technique for efficiently measuring the amounts of wear in a plurality of components.

[0005] According to one aspect of the present disclosure, there is provided a plasma processing system including a plasma processing module, a transfer module, and a control device, wherein the plasma processing module includes a plasma processing chamber, a substrate support disposed inside the plasma processing chamber, an inner ring disposed to surround a substrate supported on the substrate support, and an outer ring disposed to surround the inner ring, the transfer module includes a transfer chamber and a transfer robot disposed inside the transfer chamber, the transfer robot including an end effector that moves between the plasma processing chamber and the transfer chamber, and a distance sensor attached to the end effector, and the control device controls the transfer robot to successively perform a first measurement operation that measures a first amount of wear of the inner ring based on a first recipe, and a second measurement operation that measures a second amount of wear of the outer ring based on a second recipe different from the first recipe.

[0006] The present disclosure provides a technique for efficiently measuring the amounts of wear in a plurality of components.

[0007] Fig. 1 is a diagram illustrating the configuration of a plasma processing system according to this embodiment. Fig. 2 is a diagram illustrating an outline of a plasma processing module in the plasma processing system according to this embodiment. Fig. 3 is a diagram illustrating an outline of an end effector in the plasma processing system according to this embodiment. Fig. 4 is a diagram illustrating an outline of processing in the plasma processing system according to this embodiment.

[0008] Hereinafter, embodiments of the present disclosure will be described with reference to the drawings. In this specification and the drawings, substantially identical components are designated by the same reference numerals, and redundant description will be omitted. To facilitate understanding, the scale of each part in the drawings may differ from the actual scale. Directions such as parallel, right-angled, orthogonal, horizontal, vertical, up / down, left / right, and the like are permitted to a degree that does not impair the effects of the embodiments. The shape of corners is not limited to right angles and may be rounded. Parallel, right-angled, orthogonal, horizontal, and vertical may include approximately parallel, approximately right-angled, approximately orthogonal, approximately horizontal, and approximately vertical.

[0009] First, a plasma processing system according to this embodiment will be described. Fig. 1 is a diagram illustrating the configuration of a plasma processing system 100, which is an example of the plasma processing system according to this embodiment.

[0010] The plasma processing system 100 performs processing such as etching on the wafer W using plasma.

[0011] The plasma processing system 100 includes a carrier station 110 and a processing station 115. The plasma processing system 100 has a configuration in which the carrier station 110 and the processing station 115 are integrally connected. A carrier C capable of accommodating a plurality of wafers W is loaded and unloaded into the carrier station 110. The processing station 115 performs a predetermined process on the wafer W under reduced pressure. The processing station 115 includes a plurality of various processing devices.

[0012] The carrier station 110 and the processing station 115 are connected via two load lock devices, ie, load lock device 116 and load lock device 117 .

[0013] The load lock devices 116 and 117 have load lock chambers 116a and 117a, respectively, which are configured so that the interiors of the chambers can be switched between atmospheric pressure and vacuum. The load lock devices 116 and 117 are provided to connect the atmospheric pressure transfer device 120 and the vacuum transfer device 130, respectively.

[0014] The carrier station 110 includes an atmospheric pressure transfer device 120 and a carrier mounting table 121. The carrier station 110 may include an aligner that adjusts the orientation of the wafer W.

[0015] The atmospheric pressure transfer device 120 includes an atmospheric transfer chamber 122 whose interior is kept under atmospheric pressure. The atmospheric transfer chamber 122 is connected to the load lock chamber 116a of the load lock device 116 via a gate valve G1. The atmospheric transfer chamber 122 is also connected to the load lock chamber 117a of the load lock device 117 via a gate valve G2.

[0016] The atmospheric pressure transfer device 120 includes a transfer mechanism 123 inside an atmospheric transfer chamber 122. The transfer mechanism 123 transfers the wafer W between each of the load lock chambers 116a and 117a under atmospheric pressure.

[0017] The transfer mechanism 123 includes a transfer arm 123a. The transfer arm 123a is configured, for example, by an articulated arm having an end effector (wafer holder) at its tip that holds the wafer W. The transfer mechanism 123 transfers the wafer W while holding it with the transfer arm 123a.

[0018] The carrier mounting table 121 is provided on the side of the atmospheric pressure transfer device 120 opposite to the load lock devices 116 and 117. The wafer W in the carrier C mounted on the carrier mounting table 121 is carried in and out of the atmospheric transfer chamber 122 by a transfer arm 123 a of a transfer mechanism 123 of the atmospheric pressure transfer device 120.

[0019] The processing station 115 includes a vacuum transfer device 130 and processing devices 140, 141, 142, and 143.

[0020] The vacuum transfer device 130 includes a vacuum transfer chamber 131 whose interior is maintained at a reduced pressure (vacuum state). The vacuum transfer chamber 131 is connected to a load lock chamber 116a of the load lock device 116 via gate valve G3. The vacuum transfer chamber 131 is also connected to a load lock chamber 117a of the load lock device 117 via gate valve G4. The vacuum transfer chamber 131 is further connected to a vacuum processing chamber 144 of the processing device 140 via gate valve G5. Similarly, the vacuum transfer chamber 131 is connected to a vacuum processing chamber 145 of the processing device 141 via gate valve G6, to a vacuum processing chamber 146 of the processing device 142 via gate valve G7, and to a vacuum processing chamber 147 of the processing device 143 via gate valve G8.

[0021] The vacuum transfer device 130 includes a transfer robot 132 for transferring a wafer W inside a vacuum transfer chamber 131. The transfer robot 132 transfers the wafer W into and out of the processing device 140 via a transfer port between the processing device 143 and the processing device 140. The transfer robot 132 includes a transfer arm 132a. The transfer arm 132a is configured, for example, by an articulated arm having an end effector (wafer holder) for holding the wafer W provided at its tip.

[0022] Each of the processing devices 140 to 143 performs an etching process using plasma under reduced pressure on the wafer W. Each of the processing devices 140 to 143 may perform not only the etching process but also other predetermined processes such as a film formation process and a diffusion process under reduced pressure.

[0023] The processing apparatuses 140 to 143 include vacuum processing chambers 144 to 147, respectively, in which etching processing is performed on wafers W in chambers under reduced pressure.

[0024] The control device 150 includes a control unit 151 and a display unit 152 .

[0025] The control unit 151 includes, for example, a computer equipped with a CPU (Central Processing Unit), a memory, and the like. The control unit 151 also includes a storage unit (not shown) for storing various information. The storage unit stores a program for controlling wafer processing in the plasma processing system 100 and a program for estimating the heights of edge rings and cover rings (described later) disposed inside the processing units 140 to 143. The above-mentioned programs may be recorded on a computer-readable storage medium and installed in the control unit 150 from the storage medium. The storage medium may be temporary or non-temporary. Some or all of the programs may be implemented by dedicated hardware (circuit board).

[0026] The display unit 152 displays various types of information and is configured by a display device such as a liquid crystal display or an organic EL display.

[0027] Next, the plasma processing module in the plasma processing system according to this embodiment will be described.

[0028] An example of the configuration of a plasma processing module will be described below: Fig. 2 is a diagram for explaining an example of the configuration of a capacitively coupled plasma processing apparatus.

[0029] The plasma processing module includes a capacitively coupled plasma processing device 1 and a control unit 2. The plasma processing device 1 is an example of each of the processing devices 141 to 143. The capacitively coupled plasma processing device 1 includes a plasma processing chamber 10, a gas supply unit 20, a power supply system 30, and an exhaust system 40. The plasma processing device 1 also includes a substrate support 11 and a gas inlet. The gas inlet is configured to introduce at least one process gas into the plasma processing chamber 10. The gas inlet includes a showerhead 13. The substrate support 11 is disposed within the plasma processing chamber 10. The showerhead 13 is disposed above the substrate support 11. In one embodiment, the showerhead 13 forms at least a portion of the ceiling of the plasma processing chamber 10. The plasma processing chamber 10 has a plasma processing space 10s defined by the showerhead 13, a sidewall 10a of the plasma processing chamber 10, and the substrate support 11. The plasma processing apparatus 1 has a loading / unloading port 10h in a sidewall 10a for loading / unloading a wafer W. The plasma processing apparatus 1 also has a gate valve 10g at the loading / unloading port 10h. The plasma processing chamber 10 has at least one gas supply port for supplying at least one processing gas to a plasma processing space 10s and at least one gas exhaust port for exhausting gas from the plasma processing space. The plasma processing chamber 10 is grounded. The showerhead 13 and the substrate support 11 are electrically insulated from the housing of the plasma processing chamber 10.

[0030] The substrate support 11 includes a main body 111 and a ring assembly 112. The main body 111 has a central region 111a for supporting a wafer W and an annular region 111b for supporting the ring assembly 112. The wafer W is an example of a processing substrate. The annular region 111b of the main body 111 surrounds the central region 111a of the main body 111 in a plan view. The wafer W is disposed on the central region 111a of the main body 111, and the ring assembly 112 is disposed on the annular region 111b of the main body 111 so as to surround the wafer W on the central region 111a of the main body 111. Therefore, the central region 111a is also referred to as a substrate support surface for supporting the wafer W, and the annular region 111b is also referred to as a ring support surface for supporting the ring assembly 112.

[0031] In one embodiment, the main body 111 includes a base 1110 and an electrostatic chuck 1111. The base 1110 includes a conductive member. The conductive member of the base 1110 may function as a lower electrode. The electrostatic chuck 1111 is disposed on the base 1110. The electrostatic chuck 1111 includes a ceramic member 1111a and an electrostatic chuck electrode 1111b disposed within the ceramic member 1111a. The electrostatic chuck electrode 1111b is also referred to as a clamping electrode. In one embodiment, the electrostatic chuck electrode 1111b is electrically connected or coupled to a chuck power supply. The chuck power supply may be a DC power supply or an AC power supply. The ceramic member 1111a has a central region 111a. In one embodiment, the ceramic member 1111a also has an annular region 111b. Note that the annular region 111b may be formed on another member surrounding the electrostatic chuck 1111, such as an annular electrostatic chuck or an annular insulating member. In this case, the ring assembly 112 may be disposed on the annular electrostatic chuck or the annular insulating member, or may be disposed on both the electrostatic chuck 1111 and the annular insulating member. At least one bias electrode electrically connected to or coupled to a power supply 31 and / or a power supply 32 (described later) may be disposed within the ceramic member 1111a. In this case, the at least one bias electrode functions as a lower electrode. Alternatively, the conductive member of the base 1110 and the bias electrode within the ceramic member 1111a may function as multiple lower electrodes. In one embodiment, the first voltage generation unit 32a, which functions as a voltage pulse generation unit (described later), is electrically connected to or coupled to the bias electrode within the ceramic member 1111a, and the first RF generation unit 31a (described later) is electrically connected to or coupled to the conductive member of the base 1110. The electrostatic chuck electrode 1111b may function as a lower electrode. The substrate support 11 therefore comprises at least one bottom electrode.

[0032] In the plasma processing apparatus 1, the ring assembly 112 includes an edge ring 113 and a cover ring 114. The cover ring 114 is provided near the edge ring 113. The ring assembly 112 may include one or more annular members. For example, in one embodiment, the one or more annular members include one or more edge rings and at least one cover ring. The edge ring is made of a conductive material or an insulating material, and the cover ring is made of an insulating material.

[0033] The substrate support 11 may also include a temperature adjustment module configured to adjust at least one of the electrostatic chuck 1111, the ring assembly 112, and the substrate to a target temperature. The temperature adjustment module may include a heater, a heat transfer medium, a flow passage 1110a, or a combination thereof. A heat transfer fluid such as brine or gas flows through the flow passage 1110a. In one embodiment, the flow passage 1110a is formed in the base 1110, and one or more heaters are disposed in the ceramic member 1111a of the electrostatic chuck 1111. The substrate support 11 may also include a heat transfer gas supply configured to supply a heat transfer gas to a gap between the backside of the wafer W and the central region 111a.

[0034] The showerhead 13 is configured to introduce at least one process gas from the gas supply unit 20 into the plasma processing space 10s. The showerhead 13 has at least one gas supply port 13a, at least one gas diffusion chamber 13b, and multiple gas inlets 13c. The process gas supplied to the gas supply port 13a passes through the gas diffusion chamber 13b and is introduced into the plasma processing space 10s from the multiple gas inlets 13c. The showerhead 13 also includes at least one upper electrode. In addition to the showerhead 13, the gas inlet may also include one or more side gas injectors (SGIs) attached to one or more openings formed in the sidewall 10a.

[0035] The gas supply unit 20 may include at least one gas source 21 and at least one flow controller 22. In one embodiment, the gas supply unit 20 is configured to supply at least one process gas from a corresponding gas source 21 to the showerhead 13 via a corresponding flow controller 22. Each flow controller 22 may include, for example, a mass flow controller or a pressure-controlled flow controller. Additionally, the gas supply unit 20 may include one or more flow modulation devices to modulate or pulse the flow rate of the at least one process gas.

[0036] The power supply system 30 includes a power supply 31 electrically connected or coupled to the plasma processing chamber 10. In one embodiment, the power supply 31 is electrically connected or coupled to the plasma processing chamber 10 via at least one impedance matcher. The impedance matcher may be a mechanically controlled matcher or an electronically controlled matcher. The power supply 31 is configured to supply at least one radio frequency (RF) signal (RF power) to at least one lower electrode and / or at least one upper electrode. This generates plasma from at least one process gas supplied to the plasma processing space 10s. Therefore, the power supply 31 can function as at least a part of a plasma generating unit configured to generate plasma from one or more process gases in the plasma processing chamber 10. Furthermore, by supplying a bias RF signal to the at least one lower electrode, a bias potential is generated on the wafer W, thereby attracting ion components in the formed plasma to the wafer W.

[0037] The power supply 31 includes a first RF generator 31a and a second RF generator 31b. The first RF generator 31a is electrically connected or coupled to at least one lower electrode and / or at least one upper electrode and is configured to generate a source RF signal (source RF power) to generate plasma in the plasma processing space 10s. In one embodiment, the first RF generator 31a is electrically connected or coupled to at least one lower electrode and / or at least one upper electrode via at least one impedance matcher. In one embodiment, the source RF signal has a frequency in the range of 10 MHz to 150 MHz. In one embodiment, the first RF generator 31a may be configured to generate multiple source RF signals having different frequencies. The generated one or more source RF signals are supplied to at least one lower electrode and / or at least one upper electrode.

[0038] The second RF generator 31b is electrically connected or coupled to at least one lower electrode and configured to generate a bias RF signal (bias RF power). In one embodiment, the second RF generator 31b is electrically connected or coupled to at least one lower electrode via at least one impedance matcher. When the first RF generator 31a is electrically connected or coupled to a lower electrode, the second RF generator 31b may be electrically connected or coupled to the same lower electrode or to another lower electrode. The frequency of the bias RF signal may be the same as or different from the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency lower than the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency in the range of 100 kHz to 60 MHz. In one embodiment, the second RF generator 31b may be configured to generate multiple bias RF signals having different frequencies. The generated one or more bias RF signals are supplied to at least one lower electrode. In various embodiments, at least one of the source RF signal and the bias RF signal may be pulsed.

[0039] The power supply system 30 may also include a power supply 32 electrically connected or coupled to the plasma processing chamber 10. The power supply 32 includes a first voltage generator 32a and a second voltage generator 32b. In one embodiment, the first voltage generator 32a is electrically connected or coupled to at least one lower electrode and configured to generate a first voltage signal. The generated first voltage signal is applied to the at least one lower electrode. In one embodiment, the second voltage generator 32b is electrically connected or coupled to at least one upper electrode and configured to generate a second voltage signal. The generated second voltage signal is applied to the at least one upper electrode.

[0040] In various embodiments, the first and / or second voltage signals may be pulsed. In this case, the first voltage generator 32a and / or the second voltage generator 32b function as a voltage pulse generator configured to generate a sequence of voltage pulses. Thus, the sequence of voltage pulses is applied to at least one lower electrode and / or at least one upper electrode. In one embodiment, the sequence of voltage pulses includes multiple cycles, each cycle including a burst of voltage pulses during a first period and a constant reference voltage during a second period. That is, the bursts of voltage pulses are repeated in the sequence of voltage pulses. The absolute value of the voltage level of the voltage pulses is greater than the absolute value of the voltage level of the reference voltage. The voltage pulses may have an arbitrary waveform, such as a rectangular, trapezoidal, triangular, or combination thereof, and the arbitrary waveform may vary over time. The voltage pulses may have positive or negative polarity. Furthermore, the sequence of voltage pulses may include one or more positive polarity voltage pulses and one or more negative polarity voltage pulses within one cycle. The first voltage generating unit 32a and the second voltage generating unit 32b may be provided in addition to the power supply 31, or the first voltage generating unit 32a may be provided instead of the second RF generating unit 31b.

[0041] The exhaust system 40 may be connected to, for example, a gas exhaust port 10e provided at the bottom of the plasma processing chamber 10. The exhaust system 40 may include a pressure regulating valve and a vacuum pump. The pressure in the plasma processing space 10s is regulated by the pressure regulating valve. The vacuum pump may include a turbomolecular pump, a dry pump, or a combination thereof.

[0042] The control unit 2 processes computer-executable instructions that cause the plasma processing apparatus 1 to perform the various steps described in this disclosure. The control unit 2 may be configured to control each element of the plasma processing apparatus 1 to perform the various steps described herein. In one embodiment, part or all of the control unit 2 may be included in the plasma processing apparatus 1. The control unit 2 is realized by, for example, a computer 2a. The control unit 2 may include a processing unit 2a1, a memory unit 2a2, and a communication interface 2a3. The functions performed by the processing unit 2a1 described in this disclosure may be implemented in circuitry or processing circuitry, including general-purpose processors, application-specific processors, integrated circuits, ASICs (Application Specific Integrated Circuits), CPUs (Central Processing Units), conventional circuitry, and / or combinations thereof, programmed to perform the described functions. A processor is considered to be a circuit or processing circuit including transistors and other circuitry. The processor may also be a programmed processor that executes a program stored in the memory unit 2a2. This program may be stored in the memory unit 2a2 in advance or may be acquired via a medium when needed. The acquired program is stored in the storage unit 2a2 and read from the storage unit 2a2 by the processing unit 2a1 for execution. The medium may be various storage media readable by the computer 2a or a communication line connected to the communication interface 2a3. The storage unit 2a2 may include a random access memory (RAM), a read-only memory (ROM), a hard disk drive (HDD), a solid state drive (SSD), or a combination thereof. The communication interface 2a3 may communicate with the plasma processing apparatus 1 via a communication line such as a local area network (LAN).In this disclosure, a circuit, unit, or means is hardware that is programmed to implement or configured to implement a described function. The hardware may be any hardware described in this disclosure or any hardware that is programmed to implement or known to implement the described function. If the hardware is a processor, which is considered a type of circuit, the circuit, means, or unit is a combination of hardware and software used to configure the hardware and / or processor.

[0043] Next, the end effector in the plasma processing system according to this embodiment will be described. Fig. 3 is a diagram showing an outline of an end effector 300 in a plasma processing apparatus 1, which is an example of a plasma processing system according to this embodiment.

[0044] The end effector 300 places the wafer W on it. The end effector 300 is provided at the tip of the transfer robot 132. The tip of the end effector 300 has a U-shape.

[0045] The transfer robot 132 includes a distance sensor 310 and a distance sensor 311 at the tip of the end effector 300. The distance sensors 310 and 311 are each attached to the tip of the end effector 300. The distance sensors 310 and 311 are each attached to a surface of the end effector 300 opposite to a mounting surface on which a wafer W is placed.

[0046] Each of the distance sensors 310 and 311 measures the distance from the end effector 300 to an object. The distance measurement method used by each of the distance sensors 310 and 311 is a method that allows non-contact measurement in a vacuum atmosphere, for example, a method based on light. Each of the distance sensors 310 and 311 measures the distance using, for example, a white light confocal method.

[0047] The distance sensor 310 and the distance sensor 311 are each connected to the unit controller 320 via an optical fiber 330. The unit controller 320 includes a light source that supplies white light. The unit controller 320 includes, for example, an LED (Light Emitting Diode) as the light source.

[0048] Each of the distance sensors 310 and 311 irradiates the white light supplied from the unit controller 320 onto the object so that the white light is focused at a different height for each wavelength contained in the white light. Then, each of the distance sensors 310 and 311 inputs reflected light of the wavelength focused on the object to the unit controller 320 via an optical fiber 330. The unit controller 320 includes a light-receiving element, such as a CCD (Charged-Coupled Device), for receiving the reflected light. The unit controller 320 calculates the distance from each of the distance sensors 310 and 311 to the object based on the wavelength of the input reflected light.

[0049] For example, if the distance sensors 310 and 311 are each a white light confocal type, the received intensity of reflected light at each of the distance sensors 310 and 311 differs depending on the distance between the object and each of the distance sensors 310 and 311. For example, if the distance between the object and each of the distance sensors 310 and 311 is gradually increased from a close state, the received intensity of reflected light at each of the distance sensors 310 and 311 gradually increases up to a predetermined distance. Then, when the distance between the object and each of the distance sensors 310 and 311 becomes greater than the predetermined distance, the received intensity of reflected light at each of the distance sensors 310 and 311 gradually decreases. In other words, there exists an optimal distance between the object and each of the distance sensors 310 and 311.

[0050] For example, the reception strength increases up to 2 mm between the target and each of distance sensors 310 and 311, and decreases when the distance is greater than 2 mm. Note that this distance is just an example and varies depending on the characteristics of the sensors, the material of the target, etc.

[0051] Therefore, the plasma processing system according to this embodiment changes the recipe for distance measurement depending on the object.

[0052] Next, processing in the plasma processing system according to this embodiment will be described. FIG. 4 is a diagram showing an outline of processing in a plasma processing apparatus 1, which is an example of a plasma processing system according to this embodiment. The plasma processing apparatus 1 performs processing on a reference wafer Ws placed on a substrate support 11 as a wafer W. The reference wafer Ws has a reference surface WS that serves as a height reference. The height of the reference surface WS when the reference wafer Ws is placed on the substrate support 11 becomes the reference height LVs. The reference wafer Ws also has a step Wa for height correction. The height of the step Wa is measured in advance with high precision.

[0053] Here, the description will be given using the distance sensor 310. First, it is assumed that the distance sensor 310 is disposed above the reference wafer Ws.

[0054] First, the control device 150 determines the reference height LVs by measuring the surface of the reference wafer Ws as a reference surface WS using the distance sensor 310. When the end effector 300 to which the distance sensor 310 is attached measures the reference wafer Ws, the control device 150 performs the measurement according to the recipe RCP1.

[0055] Here, the recipe RCP1 includes, for example, setting values ​​for the distance sensor 310. For example, the recipe RCP1 includes at least parameters for the sampling rate (unit: kilohertz) and exposure time (unit: microseconds) for the distance sensor 310. The recipe RCP1 also includes, for example, setting values ​​for the operation of the transfer robot 132. For example, the recipe RCP1 includes at least parameters for the transfer robot 132, for example, an offset distance (unit: millimeters), a rotation angle (unit: degrees), a rotation speed (unit: percent), and a height (unit: millimeters) of the distance sensor 310.

[0056] The control device 150 controls the distance sensor 310 and the transfer robot 132 based on the recipe RCP1. When the distance sensor 310 and the transfer robot 132 are controlled based on the recipe RCP1, the distance sensor 310 measures the distance between the reference wafer Ws and the distance sensor 310 while moving based on the settings.

[0057] The control device 150 determines a representative value of the distance between the reference wafer Ws and the distance sensor 310 by, for example, averaging a plurality of measurements of the distance between the reference wafer Ws and the distance sensor 310 .

[0058] The control device 150 determines the height of the reference surface WS on the reference wafer Ws from a representative value of the distance between the reference wafer Ws and the distance sensor 310 .

[0059] Next, the control device 150 changes the recipe from recipe RCP1 to recipe RCP2 at position POSA, which is the boundary between the reference wafer Ws and the edge ring 113. In other words, the control device 150 changes the recipe from recipe RCP1 to recipe RCP2 when the distance sensor 310 moves to position POSA, which is the boundary between the reference wafer Ws and the edge ring 113. Then, the control device 150 controls the distance sensor 310 and the transfer robot 132 based on the recipe RCP2.

[0060] The parameter items of the recipe RCP2 are the same as those of the recipe RCP1. The set values ​​in the recipe RCP2 may be different from or the same as those in the recipe RCP1.

[0061] The control device 150 controls the distance sensor 310 and the transfer robot 132 based on the recipe RCP2. When the distance sensor 310 and the transfer robot 132 are controlled based on the recipe RCP2, the distance sensor 310 measures the distance between the edge ring 113 and the distance sensor 310 while moving based on the settings.

[0062] The control device 150 determines a representative value of the distance between the edge ring 113 and the distance sensor 310 by, for example, averaging a plurality of measurements of the distance between the edge ring 113 and the distance sensor 310 .

[0063] The control device 150 calculates the height of the edge ring 113 from a representative value of the distance between the edge ring 113 and the distance sensor 310 and the height of the reference plane WS. The control device 150 calculates the amount of wear of the edge ring 113 from, for example, the change in the height of the edge ring 113 measured previously and the height of the edge ring 113 measured this time.

[0064] As described above, the operation of the control device 150 measuring the wear rate of the edge ring 113 based on the recipe RCP2 is an example of a first measurement operation.

[0065] Next, the control device 150 changes the recipe from recipe RCP2 to recipe RCP3 at position POSB, which is the boundary between the edge ring 113 and the cover ring 114. In other words, the control device 150 changes the recipe from recipe RCP2 to recipe RCP3 when the distance sensor 310 moves to position POSB, which is the boundary between the edge ring 113 and the cover ring 114. Then, the control device 150 controls the distance sensor 310 and the transfer robot 132 based on the recipe RCP3.

[0066] The parameter items of recipe RCP3 are the same as those of recipe RCP1, except that the set values ​​in recipe RCP3 are different from those in recipe RCP2.

[0067] The control device 150 controls the distance sensor 310 and the transfer robot 132 based on the recipe RCP3. When the distance sensor 310 and the transfer robot 132 are controlled based on the recipe RCP3, the distance sensor 310 measures the distance between the covering 114 and the distance sensor 310 while moving based on the settings.

[0068] The control device 150 determines a representative value of the distance between the covering 114 and the distance sensor 310, for example, by averaging multiple measurements of the distance between the covering 114 and the distance sensor 310.

[0069] The control device 150 calculates the height of the covering 114 from a representative value of the distance between the covering 114 and the distance sensor 310 and the height of the reference plane WS. Then, the control device 150 calculates the wear amount of the covering 114 from, for example, the change in the height of the covering 114 measured previously and the height of the covering 114 measured this time.

[0070] As described above, the operation of the control device 150 measuring the wear amount of the cover ring 114 based on the recipe RCP3 is an example of a second measurement operation.

[0071] For example, the intensity of the reflected light received by the distance sensor 310 is significantly affected by the materials and surface conditions of the edge ring 113 and the cover ring 114. Therefore, if the same recipe is used to measure the edge ring 113 and the cover ring 114, the reliability of the measurement by the distance sensor 310 may be impaired.

[0072] For example, the reliability of measurement decreases when the amount of light in the distance sensor 310 becomes saturated. Therefore, the control device 150 performs control to prevent the amount of light from becoming saturated, for example, by shortening the exposure time of the distance sensor 310 or increasing the height of the end effector 300.

[0073] For example, the reliability of measurement decreases when the amount of light is insufficient in the distance sensor 310. Therefore, the control device 150 performs control to compensate for the insufficient amount of light, for example, by lengthening the exposure time of the distance sensor 310 or lowering the height of the end effector 300.

[0074] Furthermore, when the exposure time of the distance sensor 310 is changed, for example, it may be necessary to slow down the sampling rate when extending the exposure time. Therefore, the control device 150, for example, changes the sampling rate of the distance sensor 310 in accordance with the change in the exposure time of the distance sensor 310. Furthermore, when the sampling rate of the distance sensor 310 is changed, the number of measurement points measured by the distance sensor 310 may increase or decrease. For example, if the sampling rate is slowed while the rotation rate remains the same, the number of measurement points measured by the distance sensor 310 will decrease. Therefore, the control device 150 may, for example, change the rotation rate of the end effector 300 in accordance with the change in the sampling rate of the distance sensor 310. For example, when the sampling rate of the distance sensor 310 is slowed, the control device 150 may slow down the rotation rate of the end effector 300.

[0075] For example, when the height of the distance sensor 310 is not changed, the control device 150 moves the end effector 300 along the arrow P1a from the reference wafer Ws to the cover ring 114 while measuring. When the height of the distance sensor 310 is not changed, the control device 150 moves the end effector 300 along the arrow P1b from the cover ring 114 to the reference wafer Ws. When the end effector 300 is moved along the arrow P1b, the distance may be measured or only moved.

[0076] Furthermore, for example, when changing the height of the distance sensor 310, the control device 150 moves the end effector 300 along arrow P2a from the reference wafer Ws to the edge of the edge ring 113 while measuring. Then, the control device 150 moves the end effector 300 along arrow P2b to change the height of the distance sensor 310. Then, the control device 150 moves the cover ring 114 along arrow P2c while measuring. Also, the control device 150 moves the end effector 300 from the cover ring 114 to the reference wafer Ws along arrow P2d. When moving the end effector 300 along arrow P2d, distance measurement may be performed, or the end effector 300 may simply be moved.

[0077] When the control device 150 changes the height of the distance sensor 310, the control device 150 may measure the reference height again when the distance sensor 310 returns to the reference wafer Ws along the arrow P2d.

[0078] When switching recipes, the control device 150 may temporarily stop the operation of the transfer robot 132. For example, when switching from one of recipe RCP2 and recipe RCP3 to the other, the control device 150 may temporarily stop the operation of the transfer robot 132. By temporarily stopping the operation of the transfer robot 132, the distance sensor 310 can operate stably before and after switching recipes.

[0079] In the above example, the amount of wear of each of the edge ring 113 and the cover ring 114 has been described, but it is also possible to measure the amount of deposits that accumulate on each of the edge ring 113 and the cover ring 114. Furthermore, in the above example, the distance sensor 310 has been used, but the same applies to the distance sensor 311.

[0080] The plasma processing system according to this embodiment sequentially performs a first measurement operation to measure the wear amount of an edge ring and a second measurement operation to measure the wear amount of a cover ring based on a second recipe different from the first recipe. By sequentially performing the first and second measurement operations, the plasma processing system according to this embodiment can efficiently measure the wear amounts of different components. When measuring the wear amounts (deposition amounts) of measurement targets of different materials and shapes, the plasma processing system according to this embodiment can switch measurement conditions (measurement speed, exposure time, robot speed, etc.) appropriate for each measurement target during a single measurement operation. Furthermore, the plasma processing system according to this embodiment can rapidly measure multiple measurement targets while maintaining measurement accuracy by changing the position (height) of the distance sensor to an appropriate measurement distance. Furthermore, the plasma processing system according to this embodiment can contribute to improved productivity and intelligent control (including autonomy) of manufacturing equipment by rapidly measuring multiple measurement targets while maintaining measurement accuracy.

[0081] For example, when measuring the wear (accumulation) amount of objects made of different materials and shapes by mounting a sensor on the end effector, it is possible to set measurement conditions (measurement speed, exposure time, robot speed, etc.) appropriate for each object. However, this requires repeating similar measurement operations, which can increase measurement time and reduce productivity. Furthermore, the inevitably long measurement time can make the sensor temperature more susceptible to the influence of environmental temperature, which can reduce measurement accuracy.

[0082] Furthermore, for example, when measuring the wear (accumulation) amount of measurement targets of different materials and shapes by mounting a sensor on the end effector, it is possible to measure using the same measurement conditions. When measuring using the same measurement conditions, trade-offs are considered and the measurement is performed within a limited range to prevent phenomena that hinder measurement (insufficient light, excessive light, etc.) from occurring for each measurement target. However, when measuring using the same measurement conditions, the usable window may become narrower.

[0083] When measuring the wear (deposition) amounts of measurement targets made of different materials and with different shapes, the plasma processing system according to this embodiment switches to measurement conditions (measurement speed, exposure time, robot speed, etc.) appropriate for each measurement target during a single measurement operation. Then, the plasma processing system according to this embodiment changes the height of the distance sensor to an appropriate position, for example.

[0084] For example, in the plasma processing system according to this embodiment, if an object is measured under fixed conditions and the measurement result of the object is in an error mode, the optimal measurement conditions for the object may be searched for and the measurement operation may be performed again after specifying them. For example, the distance may be shortened within an exclusion area set to prevent interference with surrounding parts, or the measurement conditions, such as height, may be adjusted so that the distance falls within a light intensity range that ensures measurement reliability.

[0085] The material and surface texture of the reference wafer Ws may be the same as or have similar surface texture to the measurement target, provided that a measurement light intensity sufficient to ensure measurement accuracy is obtained. Having similar light intensity levels may reduce the number of measurement condition switching points.

[0086] Although the plasma processing system according to this embodiment has been described as an example, the technology of the present disclosure is not limited to plasma processing apparatuses, but can also be applied to substrate processing systems having substrate processing modules for processing wafers W.

[0087] The vacuum transfer device 130 is an example of a transfer module and a measurement module, the vacuum transfer chamber 131 is an example of a transfer chamber, and the transfer arm 132a is an example of a movable member. The edge ring 113 is an example of an inner ring and a first consumable member, and the cover ring 114 is an example of an outer ring and a second consumable member. The amount of wear of the edge ring 113 is an example of a first amount of wear, and the amount of wear of the cover ring 114 is an example of a second amount of wear.

[0088] The above-disclosed embodiments include, for example, the following aspects.

[0089] [Supplementary Note 1] A plasma processing system comprising: a plasma processing module; a transfer module; and a control device, wherein the plasma processing module comprises: a plasma processing chamber; a substrate support disposed inside the plasma processing chamber; an inner ring disposed to surround a substrate supported on the substrate support; and an outer ring disposed to surround the inner ring; the transfer module comprises: a transfer chamber; and a transfer robot disposed inside the transfer chamber, wherein the transfer robot comprises: an end effector that moves between the plasma processing chamber and the transfer chamber; and a distance sensor attached to the end effector; and the control device controls the transfer robot to successively perform a first measurement operation that measures a first amount of wear of the inner ring based on a first recipe and a second measurement operation that measures a second amount of wear of the outer ring based on a second recipe different from the first recipe.

[0090] [Supplementary Note 2] The plasma processing system according to Supplementary Note 1, wherein the control device controls the transfer robot to stop temporarily when switching from one of the first measurement operation and the second measurement operation to the other.

[0091] [Supplementary Note 3] The plasma processing system according to Supplementary Note 1 or Supplementary Note 2, wherein the distance sensor measures the distance using a white light confocal method.

[0092] [Supplementary Note 4] The plasma processing system of Supplementary Note 3, wherein the distance sensor is connected to the unit controller via an optical fiber.

[0093] 5. The plasma processing system of claim 4, wherein the unit controller includes a light source that provides white light.

[0094] [Supplementary Note 6] The plasma processing system according to any one of Supplementary Note 1 to Supplementary Note 5, wherein the control device performs measurements using a surface of a reference wafer placed on the substrate support as a reference plane.

[0095] [Supplementary Note 7] The plasma processing system of Supplementary Note 6, wherein the control device changes a recipe to the first recipe when the distance sensor moves to a position that is a boundary between the reference wafer and the inner ring.

[0096] [Supplementary Note 8] The plasma processing system according to any one of Supplementary Note 1 to Supplementary Note 7, wherein the control device determines a representative value of the distance between the inner ring and the distance sensor by averaging a plurality of measurements of the distance between the inner ring and the distance sensor.

[0097] [Supplementary Note 9] The plasma processing system according to any one of Supplementary Note 1 to Supplementary Note 8, wherein the control device controls the distance sensor to shorten an exposure time or increase a height of the end effector so as to prevent saturation of light intensity.

[0098] [Supplementary Note 10] A substrate processing system comprising: a substrate processing module; a measurement module; and a control device, wherein the substrate processing module comprises: a processing chamber; a first consumable member disposed inside the processing chamber; and a second consumable member disposed in the vicinity of the first consumable member, wherein the measurement module comprises a movable member that moves inside the processing chamber and a distance sensor attached to the movable member, and the control device controls the measurement module to successively perform a first measurement operation that measures a first amount of wear of the first consumable member based on a first recipe, and a second measurement operation that measures a second amount of wear of the second consumable member based on a second recipe different from the first recipe.

[0099] [Supplementary Note 11] The substrate processing system according to Supplementary Note 10, wherein the control device controls the measurement module to stop once when switching from one of the first measurement operation and the second measurement operation to the other.

[0100] The plasma processing system according to the present embodiment disclosed herein should be considered in all respects as illustrative and not restrictive. The above-described embodiments can be modified and improved in various ways without departing from the spirit and scope of the appended claims. The features described in the above-described embodiments can be configured in other ways and can be combined with each other without any inconsistency.

[0101] This application claims priority from basic patent application No. 2024-130102, filed with the Japan Patent Office on August 6, 2024, the entire contents of which are incorporated herein by reference.

[0102] REFERENCE SIGNS LIST 1 Plasma processing apparatus 10 Plasma processing chamber 11 Substrate support 100 Plasma processing system 110 Carrier station 112 Ring assembly 113 Edge ring 114 Cover ring 115 Processing station 130 Vacuum transfer apparatus 131 Vacuum transfer chamber 132 Transfer robot 132a Transfer arm 140, 141, 142, 143 Processing apparatus 150 Control apparatus 300 End effector 310, 311 Distance sensor POSA, POSB Position RCP1, RCP2, RCP3 Recipe W Wafer Ws Reference wafer WS Reference surface

Claims

1. A plasma processing system comprising: a plasma processing module; a transfer module; and a control device, wherein the plasma processing module comprises: a plasma processing chamber; a substrate support disposed inside the plasma processing chamber; an inner ring disposed to surround a substrate supported on the substrate support; and an outer ring disposed to surround the inner ring; the transfer module comprises: a transfer chamber; and a transfer robot disposed inside the transfer chamber, wherein the transfer robot comprises: an end effector that moves between the plasma processing chamber and the transfer chamber; and a distance sensor attached to the end effector; and the control device controls the transfer robot to successively perform a first measurement operation that measures a first amount of wear of the inner ring based on a first recipe, and a second measurement operation that measures a second amount of wear of the outer ring based on a second recipe different from the first recipe.

2. The plasma processing system according to claim 1, wherein said control device controls said transfer robot to stop temporarily when switching from one of said first measurement operation and said second measurement operation to the other.

3. The plasma processing system according to claim 1, wherein the distance sensor measures the distance using a white light confocal method.

4. The plasma processing system of claim 3, wherein the distance sensor is connected to a unit controller via an optical fiber.

5. The plasma processing system of claim 4, wherein the unit controller comprises a light source that provides white light.

6. The plasma processing system according to claim 1, wherein the control device performs measurements using a surface of a reference wafer placed on the substrate support as a reference plane.

7. The plasma processing system of claim 6, wherein the controller changes the recipe to the first recipe when the distance sensor moves to a position that is a boundary between the reference wafer and the inner ring.

8. The plasma processing system of claim 1, wherein the control device determines a representative value of the distance between the inner ring and the distance sensor by averaging multiple measurements of the distance between the inner ring and the distance sensor.

9. The plasma processing system according to claim 1, wherein the control device controls the distance sensor to shorten an exposure time or to increase a height of the end effector so as to prevent the amount of light from becoming saturated.

10. A substrate processing system comprising: a substrate processing module; a measurement module; and a control device, wherein the substrate processing module comprises: a processing chamber; a first consumable member disposed inside the processing chamber; and a second consumable member disposed in the vicinity of the first consumable member, wherein the measurement module comprises a movable member that moves inside the processing chamber and a distance sensor attached to the movable member, and the control device controls the measurement module to successively perform a first measurement operation that measures a first amount of wear of the first consumable member based on a first recipe, and a second measurement operation that measures a second amount of wear of the second consumable member based on a second recipe different from the first recipe.

11. The substrate processing system according to claim 10, wherein the control device controls the measurement module to stop temporarily when switching from one of the first measurement operation and the second measurement operation to the other.

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