Chemical vapor deposition apparatus

Abstract

The present invention relates to a chemical vapor deposition apparatus and, more specifically, to a chemical vapor deposition apparatus capable of, in the case of using a part of an exhaust flow path, via which gas is released, as a loading / unloading path for a substrate, preventing contamination of the substrate by preventing exhaust gas from flowing into the travel path of the substrate.

Description

chemical vapor deposition device

[0001] The present invention relates to a chemical vapor deposition apparatus, and more specifically, to a chemical vapor deposition apparatus capable of preventing contamination of a substrate by blocking exhaust gas from flowing into the substrate movement path when a part of an exhaust path through which gas is exhausted is used as a substrate loading / unloading path.

[0002] Demand for SiC power semiconductor devices has been rapidly increasing recently, and the related market is expected to continue to grow.

[0003] These SiC power semiconductor devices can be manufactured by placing a substrate in a reaction chamber, supplying a mixture of process gas and carrier gas into the reaction chamber, and growing a silicon carbide (SiC) single crystal on a substrate mounted on a susceptor by thermal decomposition.

[0004] Conventional chemical vapor deposition devices have a complex structure, requiring separate exhaust paths for gas exhaust and substrate movement paths for substrate loading / unloading. Furthermore, it is difficult to establish the shortest possible substrate movement path, resulting in significant time consuming substrate movement.

[0005] The present invention aims to provide a chemical vapor deposition apparatus capable of forming a substrate movement path as the shortest path in order to solve the above-mentioned problems, and further capable of solving the particle problem caused by the inflow of exhaust gas into the substrate movement path.

[0006] The above object of the present invention can be achieved by a chemical vapor deposition apparatus characterized by comprising a chamber providing a processing space for a substrate, an exhaust pipe connected to the processing space inside the chamber so that gas of the processing space is exhausted and a substrate input port through which the substrate is taken out and out is formed, a substrate moving passage connected to the exhaust pipe through the substrate input port, and an opening / closing unit for opening and closing the substrate input port.

[0007] Here, the substrate input port can be formed in the exhaust pipe along a straight line connecting the processing space and the substrate movement path.

[0008] In addition, one side of the exhaust pipe is connected to the processing space and the other side is bent and extended, and the substrate input port can be formed in the bent portion of the exhaust pipe.

[0009] Furthermore, the opening / closing unit may be provided with a first elevation shutter that moves up and down to open and close the substrate input port.

[0010] In addition, the opening / closing unit may further include a first shaft connected to the first lifting / lowering shutter, and a first driving unit for raising / lowering the first shaft.

[0011] Here, the first driving unit is disposed outside the chamber, and a first bellows through which the first shaft passes may be provided between the first driving unit and the chamber.

[0012] Additionally, a heat transfer path through which a heat transfer fluid passes along the inner side of the first shaft can be formed.

[0013] Meanwhile, the first ascending and descending shutter may be provided with a curved portion corresponding to the bend portion of the exhaust pipe.

[0014] Furthermore, the opening / closing unit may be provided with a rotating shutter that is configured to rotate and open / close the substrate input port.

[0015] In this case, the opening / closing unit may further include a second shaft that rotates the rotary shutter and a second driving unit that moves the second shaft in a linear manner.

[0016] In addition, a rotary bar may be further provided to connect the second shaft and the rotary shutter to each other and convert the linear motion of the second shaft into a rotary motion to rotate the rotary shutter.

[0017] Meanwhile, the second driving unit may be disposed outside the chamber, and a second bellows through which the second shaft passes may be provided between the second driving unit and the chamber.

[0018] In addition, the opening / closing unit may be provided with a second lifting / lowering shutter that is capable of being raised / lowered and prevents the rotating shutter from rotating when the rotating shutter closes the substrate input port.

[0019] Meanwhile, the chamber may further include a lower plate on which a substrate or a susceptor on which the substrate is mounted is mounted, and an upper cover provided on the upper portion of the lower plate to form the processing space for the substrate.

[0020] According to the present invention having the above-described configuration, by using a part of the exhaust path through which gas is exhausted as a loading / unloading path for the substrate, the substrate movement path can be formed as the shortest path, so that the substrate can be moved in a short time.

[0021] In addition, according to the present invention, by opening and closing the substrate inlet connecting the exhaust path and the substrate movement path by the shutter, it is possible to prevent exhaust gas from flowing into the substrate movement path and acting as particles, etc.

[0022] FIG. 1 is a side cross-sectional view showing the internal configuration of a chemical vapor deposition apparatus according to one embodiment of the present invention;

[0023] Figure 2 is a front perspective view of the opening / closing unit;

[0024] Figure 3 is a rear perspective view of the opening / closing unit.

[0025] Figures 4 and 5 are partial cross-sectional views illustrating an opening / closing unit according to another embodiment;

[0026] Figures 6 and 7 are partial cross-sectional views illustrating an opening / closing unit according to another embodiment.

[0027] Hereinafter, the structure of a chemical vapor deposition apparatus according to an embodiment of the present invention will be examined in detail with reference to the drawings.

[0028] FIG. 1 is a cross-sectional side view illustrating the internal configuration of a chemical vapor deposition apparatus (1000) according to one embodiment of the present invention.

[0029] Referring to FIG. 1, the chemical vapor deposition device (1000) may be equipped with a chamber (100). An accommodation space (110) is provided inside the chamber (100), and various components may be provided therein.

[0030] Additionally, a gas supply unit (200) may be connected to one side of the chamber (100). The gas supply unit (200) may supply various process gases and purge gases toward the processing space (312) for the substrate (W).

[0031] The above chemical vapor deposition device (1000) may be provided inside the chamber (100) and may include a lower plate (320) on which the substrate (W) or a susceptor (324) on which the substrate (W) is mounted is mounted, and an upper housing (310) provided on the upper portion of the lower plate (320) to form the processing space (312) for the substrate (W). That is, the processing space (312) may be defined as a space between the lower plate (320) and the upper housing (310).

[0032] Meanwhile, the gas supply unit (200) may be provided with a gas inlet pipe (220) that extends from the outside of the chamber (100) to the inside of the chamber (100) and is connected to the processing space (312). A supply port (210) through which gas is supplied may be formed in the gas inlet pipe (220) located outside the chamber (100).

[0033] The chemical vapor deposition apparatus (1000) according to the present invention may correspond to an apparatus for depositing a silicon carbide (SiC) film on the surface of the substrate (W), and by supplying a process gas or the like from the side of the processing space (312) by the gas supply unit (200) to induce a laminar flow of gas inside the processing space (312), thereby allowing single crystal growth of silicon carbide (SiC) on the upper surface of the substrate (W).

[0034] Meanwhile, when depositing a silicon carbide (SiC) film on the upper surface of the substrate (W), the process temperature may be a high temperature equivalent to approximately 1600 degrees Celsius or higher. Accordingly, the upper housing (310) and the lower plate (320) that partition the processing space (312) may be manufactured using graphite, silicon carbide coated graphite (SiC Coated Graphite), TaC coated graphite (Tac Coated Graphite), or silicon carbide material using a CVD sintering method, thereby increasing thermal stability and thermal conductivity, efficiently heating the substrate, and reducing power consumption.

[0035] In this case, the lower plate (320) may be provided with a susceptor (324) on which the substrate (W) is mounted.

[0036] For example, a concave portion (322) may be formed in the lower plate (320), and the susceptor (324) may be inserted and placed in the concave portion (322).

[0037] Meanwhile, the susceptor (324) may be rotatably provided on the lower plate (320). That is, a nozzle (not shown) for supplying floating gas or the like toward the lower surface of the susceptor (324) may be provided in the concave portion (322) to rotate the susceptor (324). During a process for the substrate (W), the substrate (W) may be rotated by the rotation of the susceptor (324), so that the process gas or the like supplied from the side may react uniformly on the entire surface of the substrate (W).

[0038] Meanwhile, the chemical vapor deposition apparatus (1000) may be equipped with a lower heater (340) for heating the substrate (W) and processing space (312) to a process temperature. The lower heater (340) may be equipped at the lower portion of the lower plate (320).

[0039] In the case of the chemical vapor deposition apparatus according to the present embodiment, by providing a heater at the bottom of the processing space (312), the time for heating the substrate (W) and the processing space (312) to the process temperature is reduced, and further, the temperature of the substrate (W) and the processing space (312) can be precisely controlled.

[0040] In this case, the lower heater (340) may be configured as an induction heater. The shape of the induction heating coil constituting the lower heater (340) may be a circular or rectangular shape, so-called 'pancake type'. Since the induction heating coil can be used semi-permanently after installation, it has advantages in terms of maintenance and equipment operation costs.

[0041] The lower heater (340) may be installed inside the chamber (100) by a support member not shown in the drawing, or may be connected to and mounted on the lower plate (320). There is no specific limitation on the installation structure of the lower heater (340).

[0042] Meanwhile, the chemical vapor deposition device (1000) may adopt a so-called dual chamber structure. That is, an inner chamber (300) may be further provided inside the chamber (100) described above, and the susceptor (324) and lower heater (340) described above may be provided inside the inner chamber (300).

[0043] Additionally, the upper housing (310) and lower plate (320) may be provided on the inside of the inner chamber (300).

[0044] By adopting the so-called double chamber structure in this way, the possibility of particle contamination of the substrate (W) can be reduced, and the process for the substrate (W) can be carried out more smoothly.

[0045] The aforementioned gas inlet pipe (220) can pass through the inner chamber (300) and be connected to the processing space (312).

[0046] In this embodiment, the inner chamber (300) may function as a heat-blocking member. That is, the inner chamber (300) is arranged to surround the susceptor (324) and the lower heater (340), and may be composed of carbon felt, graphite felt, or the like. Alternatively, the inner chamber (300) may be composed of graphite-coated carbon felt or carbon-coated graphite felt, or the like.

[0047] In this way, when the inner chamber (300) or the heat blocking member is provided, the heat from the lower heater (340) is not radiated to the outside of the inner chamber (300), so that the processing space (312) can be heated more effectively.

[0048] Meanwhile, an exhaust pipe (400) connected to the processing space (312) and through which gas from the processing space (312) is exhausted may be provided on the inside of the chamber (100). The exhaust pipe (400) may extend from the rear end of the processing space (312) through the inner chamber (300). The exhaust pipe (400) serves to exhaust gas from the processing space (312) to the outside of the chamber (100).

[0049] In this case, one side of the exhaust pipe (400) may be connected to the processing space (312), and the other side of the exhaust pipe (400) may be bent and extended toward the base of the chamber (100). That is, one side of the exhaust pipe (400) may pass through the aforementioned internal chamber (100) and be connected to the processing space (312). In addition, the other side of the exhaust pipe (400) may be bent downward and connected to the exhaust port (102) of the base of the chamber (100).

[0050] For example, the exhaust pipe (400) may be composed of an upper cover (410) and a lower cover (420), and the upper cover (410) and the lower cover (420) may be connected to each other to form the exhaust pipe (400). In addition, it is also possible for the exhaust pipe (400) to be composed of a single member rather than the upper cover (410) and the lower cover (420).

[0051] Meanwhile, the gas discharged from the processing space (312) may be at a high temperature of approximately 1600 degrees Celsius or higher. Therefore, the upper cover (410) and the lower cover (420) may be manufactured using graphite, silicon carbide coated graphite (SiC coated graphite), TaC coated graphite (Tac coated graphite), or silicon carbide material using a CVD sintering method.

[0052] Meanwhile, the exhaust pipe (400) forms a bent portion (404) that is bent downward as described above, and can extend through the lower part of the chamber (100).

[0053] In this case, a heat transfer prevention member (432, 434) capable of suppressing heat transfer may be provided at the end of the exhaust pipe (400), i.e., at the portion connected to the base of the chamber (100). The heat transfer prevention member (432, 434) is made of a material having a low heat transfer rate, so that heat of the gas exhausted through the exhaust pipe (400) can be suppressed from being transferred to the chamber (100).

[0054] The above heat transfer prevention member (432, 434) can be made of, for example, quartz, but the material is not specifically limited.

[0055] Meanwhile, a substrate input port (414) through which the substrate (W) is introduced may be formed in the bent portion (404) of the exhaust pipe (400), and a substrate moving passage (500) may be connected to the substrate input port (414) of the bent portion (404). A robot arm (not shown) may move through the substrate moving passage (500) to load the substrate (W) into the processing space (312), or to unload the substrate (W) from the processing space (312).

[0056] That is, looking at the path through which the substrate (W) is loaded into the processing space (312) by the robot arm, it moves toward the inside of the chamber (100) along the moving space (502) of the substrate moving passage (500), passes through the substrate input port (414), and moves toward the inside of the exhaust pipe (400). In this case, the substrate (W) moves along the unbent horizontal area of ​​the exhaust pipe (400). Subsequently, it can move from the exhaust pipe (400) to the processing space (312) and be loaded.

[0057] Meanwhile, when looking at a case where the substrate (W) is unloaded from the processing space (312) by a robot arm, the substrate (W) can be unloaded along the horizontal area of ​​the exhaust pipe (400) in the processing space (312). Then, it can be pulled out of the chamber (100) along the movement space (502) of the substrate movement passage (500) through the substrate input port (414).

[0058] Ultimately, the substrate input port (414) may be formed in the exhaust pipe (400) along a straight line connecting the processing space (312) and the substrate movement path (500). In addition, when examining the movement path of the substrate (W), it can be seen that it is formed as a shortest path that straightly connects the processing space (312), the horizontal area of ​​the exhaust pipe (400), the substrate input port (414), and the substrate movement path (500).

[0059] In this way, if the movement path of the substrate (W) is configured as a straight path, when loading the substrate (W) into the processing space (312) or unloading the substrate (W) from the processing space (312), the substrate can be moved along the shortest path in a short time.

[0060] Meanwhile, as described above, if a portion of the exhaust pipe (400) forms a movement path of the substrate (W), the gas exhausted along the exhaust pipe (400) may flow into the substrate movement path (500). In this case, particles, etc. may be attached to the inner wall of the substrate movement path (500) by the exhaust gas, and the substrate (W) may be contaminated by these particles, etc.

[0061] In order to solve this problem, the present invention may include an opening / closing unit (600) that opens and closes the substrate input port (414).

[0062] The above opening / closing unit (600) can close the substrate input port (414) when exhausting gas from the processing space (312) to prevent the exhaust gas from flowing into the substrate moving passage (500). In addition, during the loading / unloading process of the substrate (W), the substrate input port (414) can be opened to move the substrate (W).

[0063] Figure 2 is a front perspective view of the opening / closing unit (600), and Figure 3 is a rear perspective view of the opening / closing unit (600).

[0064] Referring to FIGS. 1 to 3, the opening / closing unit (600) may be equipped with a first elevation shutter (610) that moves up and down to open and close the substrate input port (414). The first elevation shutter (610) may move up and down to open and close the substrate input port (414).

[0065] For example, the opening / closing unit (600) may be equipped with a first shaft (630, 632) connected to the first lifting / lowering shutter (610), and a first driving unit (650) that raises / lowers the first shaft (630, 632).

[0066] In this case, the first shaft (630, 632) is configured as a pair to stably raise and lower the first lifting shutter (610).

[0067] Meanwhile, the first driving unit (650) may be placed outside the chamber (100). That is, the first driving unit (650) may be mounted and connected to a support plate (664), and the support plate (664) may be connected to the lower portion of the chamber (100) by a support bar (670).

[0068] In addition, a first bellows (640, 642) through which the first shaft (630, 632) passes may be provided between the first driving unit (650) and the chamber (100). That is, the first shaft (630, 632) is disposed to pass through the inside of the first bellows (640, 642), the upper end of the first bellows (640, 642) may be connected to the lower end of the chamber (100), and the lower end of the first bellows (640, 642) may be connected to the first driving unit (650).

[0069] More precisely, the first driving unit (650) is connected to the elevation plate (662), and the lower end of the first bellows (640, 642) can be connected to the elevation plate (662). Therefore, the elevation plate (662) is moved up and down by the driving of the first driving unit (650), and the first shaft (630, 632) can be moved up and down by the expansion / contraction of the first bellows (640, 642). Even when the first shaft (630, 632) is moved up and down by the first bellows (640, 642), the internal pressure of the chamber (100) can be maintained.

[0070] Meanwhile, the first shaft (630, 632) is connected to the first lifting shutter (610), and for example, a connecting portion (612) connected to the first shaft (630, 632) may be provided on one side of the first lifting shutter (610), that is, on the side of the first lifting shutter (610) facing the substrate moving passage (500).

[0071] The first elevation shutter (610) is raised and lowered by the rising and falling motion of the first shaft (630, 632) to open and close the substrate input port (414). In this case, a connecting groove (412) may be formed in the upper cover (410) of the exhaust pipe (400), and a protrusion (614) inserted into the connecting groove (412) may be formed in the upper end of the first elevation shutter (610). Therefore, when the first elevation shutter (610) is raised, the protrusion (614) is inserted into the connecting groove (412), so that the substrate input port (414) can be effectively closed by surface contact.

[0072] Meanwhile, when the first elevating shutter (610) rises to close the substrate input port (414) (illustrated by a dotted line in FIG. 1), the other side of the first elevating shutter (610), that is, the side of the first elevating shutter (610) facing the exhaust pipe (400), forms an exhaust path through which exhaust gas flows in the exhaust pipe (400). Therefore, in order to reduce flow resistance when the exhaust gas is discharged along the exhaust pipe (400), the first elevating shutter (610) may be provided with a curved portion (613) corresponding to the bent portion (404) of the exhaust pipe (400). When the exhaust gas is discharged by the curved portion (613) of the first elevating shutter (610), the flow resistance is reduced, so that the exhaust gas can be discharged more smoothly.

[0073] Meanwhile, when the first elevating shutter (610) opens the substrate input port (414), the first elevating shutter (610) can be lowered to a height where the upper end of the first elevating shutter (610) does not protrude into the moving space (502) of the substrate moving passage (500). This is because when the upper end of the first elevating shutter (610) protrudes into the moving space (502) of the substrate moving passage (500), it may interfere with the robot arm moving along the moving space (502) of the substrate moving passage (500).

[0074] The lowering height of the first elevating shutter (610) may be determined in advance and stored in advance in a control unit (not shown). In addition, the lowering height of the first elevating shutter (610) may also be physically determined. For example, a step portion (435) is formed on the inner side of the heat transfer prevention member (432, 434) described above, and when the first elevating shutter (610) is lowered, the lower end of the first elevating shutter (610) may be seated on the step portion (435). The case where the lower end of the first elevating shutter (610) is seated on the step portion (435) may be determined as the lowering height of the first elevating shutter (610).

[0075] Meanwhile, as described above, the exhaust gas discharged through the exhaust pipe (400) may have a high temperature of approximately 1600 degrees Celsius or higher. Accordingly, the thermal energy of the exhaust gas may be transmitted along the first ascending and descending shutter (610) and the first shaft (630, 632), and in this case, the first bellows (640, 642) may be damaged.

[0076] Accordingly, in the present embodiment, a heat blocking portion (620, 621) may be provided between the first shaft (630, 632) and the connecting portion (612). That is, the first shaft (630, 632) may be connected to the connecting portion (612) through the heat blocking portion (620, 621). The material of the heat blocking portion (620, 621) is not particularly limited. The heat blocking portion (620, 621) can suppress heat from being transferred downward along the first shaft (630, 632) as much as possible.

[0077] Additionally, a heat transfer path (not shown) through which a heat transfer fluid passes may be formed along the inner side of the first shaft (630, 632). The heat transfer fluid flows along the inner side of the first shaft (630, 632) to cool the first shaft (630, 632), thereby preventing damage to the first bellows (640, 642).

[0078] Meanwhile, FIGS. 4 and 5 are partial cross-sectional views illustrating an opening / closing unit (1600) according to another embodiment. FIG. 4 illustrates a state in which the substrate input port (1414) is closed, and FIG. 5 illustrates a state in which the substrate input port (1414) is open.

[0079] Referring to FIGS. 4 and 5, the upper cover (1410) and the lower cover (1420) are connected to form an exhaust path, and a substrate inlet (1414) can be formed in the upper cover (1410).

[0080] In this case, the opening / closing unit (1600) may be provided with a rotating shutter (1610) that is provided to rotate to open and close the substrate input port (1414), a second shaft (1630) that rotates the rotating shutter (1610), and a second driving unit (1650) that moves the second shaft (1630) in a linear manner.

[0081] The above-described rotary shutter (1610) may be rotatably provided on the upper cover (1410) described above. For example, the upper cover (1410) may have a first rotary axis (1612) adjacent to the substrate input port (1414), and the rotary shutter (1610) may be rotatably connected to the first rotary axis (1612). The rotary shutter (1610) may rotate to open and close the substrate input port (1414).

[0082] In this case, unlike the aforementioned embodiment, the substrate input port (1414) may be formed to be inclined at a predetermined angle. This reduces the angle at which the rotary shutter (1610) rotates to open and close the substrate input port (1414), thereby reducing particle generation due to the rotation of the rotary shutter (1610).

[0083] Meanwhile, the second driving unit (1650) may be placed outside the chamber (100). For example, the second driving unit (1650) may be placed above the substrate moving passage (500) as shown in the drawing.

[0084] In addition, a second bellows (1640) through which the second shaft (1630) passes may be provided between the second driving unit (1650) and the chamber (100). That is, the second shaft (1630) is disposed to pass through the inside of the second bellows (1640), one side of the second bellows (1640) may be connected to the side surface of the chamber (100), and the other side of the second bellows (1640) may be connected to the second driving unit (1650). Even when the second shaft (1630) moves in a straight line by the second bellows (1640), the internal pressure of the chamber (100) may be maintained.

[0085] Meanwhile, the opening / closing unit (1600) may be provided with a rotation bar (1620) that connects the second shaft (1630) and the rotation shutter (1610) to each other and converts the linear motion of the second shaft (1630) into a rotational motion to rotate the rotation shutter (1610).

[0086] For example, the above-described pivot bar (1620) may be formed by being bent at a predetermined angle, and the lower end may be connected to the pivot shutter (1610), and the upper end may be connected to the second pivot shaft (1622). In addition, a coupling part (1624) may be provided at the end of the second shaft (1630), and the coupling part (1624) and the above-described pivot bar (1620) may be rotatably connected to each other.

[0087] That is, a third rotation axis (1625) is formed in the connecting portion (1624), and an intermediate member (1621) is rotatably connected to the third rotation axis (1625) and the second rotation axis (1622), thereby connecting the connecting portion (1624) and the rotation bar (1620).

[0088] Accordingly, as shown in FIG. 4, when the second shaft (1630) moves in one direction, for example, in a straight line to the right in the drawing, the rotary shutter (1610) can rotate clockwise in the drawing to close the substrate input port (1414).

[0089] In this case, an inclined portion (1422) may be formed in the substrate input port (1414) of the lower cover (1420) that is in contact with the lower end of the rotary shutter (1610). When the rotary shutter (1610) is rotated by the inclined portion (1422) to close the substrate input port (1414), the rotary shutter (1610) and the lower cover (1420) come into surface contact, thereby more effectively closing the substrate input port (1414).

[0090] Meanwhile, as shown in FIG. 5, when the second shaft (1630) moves in a straight line in another direction, for example, to the left in the drawing, the rotary shutter (1610) can rotate counterclockwise in the drawing to open the substrate input port (1414).

[0091] Meanwhile, in the case of the embodiments of FIGS. 4 and 5 described above, when the substrate input port (1414) is closed and exhaust gas is exhausted by the rotating shutter (1610) as shown in FIG. 4, the rotating shutter (1610) may rotate due to the pressure of the exhaust gas, thereby opening the substrate input port (1414). In this case, the exhaust gas may flow into the inside of the substrate movement passage (500) and act as particles, etc.

[0092] Figures 6 and 7 are partial cross-sectional views illustrating an opening / closing unit (1600') according to another embodiment for solving the aforementioned problem. Figure 6 illustrates a state in which the substrate input port (1414) is closed, and Figure 7 illustrates a state in which the substrate input port (1414) is open.

[0093] Referring to FIGS. 6 and 7, the opening / closing unit (1600') according to the present embodiment may further include a rotating shutter (1610) that is provided to rotate to open and close the substrate input port (1414), and a second raising / lowering shutter (1700) that is provided to be able to be raised / lowered to prevent the rotating shutter (1610) from rotating when the rotating shutter (1610) closes the substrate input port (1414).

[0094] The description of the above rotary shutter (1610) is similar to the above-described embodiment, so a repetitive description is omitted.

[0095] The above second lifting shutter (1700) can be configured to be raised and lowered inside the chamber (100).

[0096] The configuration for raising and lowering the second lifting shutter (1700) is similar to the configuration for raising and lowering the first lifting shutter (610) of FIGS. 1 to 3 described above, so a repeated description is omitted.

[0097] Meanwhile, the second elevating shutter (1700) serves to prevent the rotating shutter (1610) from rotating in the opening direction when the rotating shutter (1610) rotates to close the substrate input port (1414) as shown in FIG. 6. Accordingly, in FIG. 6, the second elevating shutter (1700) prevents the rotating shutter (1610) from rotating counterclockwise to open the substrate input port (1414).

[0098] In this case, the second lifting shutter (1700) rises and the upper part of the second lifting shutter (1700) comes into contact with one side of the lower part of the rotating shutter (1610), thereby preventing the rotating shutter (1610) from rotating.

[0099] In addition, a shutter slope (1611) that comes into contact with the second elevation shutter (1700) may be formed at the lower end of the rotary shutter (1610). Accordingly, when the rotary shutter (1610) rotates to close the substrate input port (1414), and the second elevation shutter (1700) rises, one side of the second elevation shutter (1700) comes into surface contact with the shutter slope (1611) of the rotary shutter (1610) to support it.

[0100] Meanwhile, in case of opening the substrate input port (1414) as shown in Fig. 7, the second ascending and descending shutter (1700) may be lowered first, and then the rotating shutter (1610) may be rotated to open the substrate input port (1414).

[0101] While the present invention has been described above with reference to preferred embodiments, those skilled in the art will appreciate that various modifications and variations can be made to the present invention without departing from the spirit and scope of the invention as defined in the claims below. Therefore, any modified implementation that fundamentally includes the elements of the claims should be considered within the technical scope of the present invention.

[0102] According to the present invention, by using a part of the exhaust path through which gas is exhausted as a loading / unloading path for the substrate, the substrate movement path can be formed as the shortest path, thereby enabling the substrate to be moved in a short time.

[0103] In addition, according to the present invention, by opening and closing the substrate inlet connecting the exhaust path and the substrate movement path by the shutter, it is possible to prevent exhaust gas from flowing into the substrate movement path and acting as particles, etc.

Claims

1. A chamber that provides a processing space for the substrate; An exhaust pipe connected to the processing space inside the chamber, through which gas from the processing space is exhausted, and through which a substrate input port is formed for taking the substrate out; A substrate moving passage connected to the exhaust pipe through the substrate input port; and A chemical vapor deposition apparatus characterized by comprising an opening / closing unit for opening and closing the substrate input port.

2. In paragraph 1, The above substrate input port A chemical vapor deposition device characterized in that the exhaust pipe is formed along a straight line connecting the processing space and the substrate movement path.

3. In paragraph 1, One side of the above exhaust pipe is connected to the processing space and the other side is bent and extended, A chemical vapor deposition device characterized in that the substrate inlet is formed in a bent portion of the exhaust pipe.

4. In paragraph 3, The above opening and closing unit A chemical vapor deposition apparatus characterized by having a first elevation shutter that opens and closes the substrate input port by ascending and descending.

5. In paragraph 4, The above opening and closing unit A chemical vapor deposition apparatus characterized by further comprising a first shaft connected to the first lifting shutter and a first driving unit for lifting and lowering the first shaft.

6. In paragraph 5, A chemical vapor deposition apparatus characterized in that the first driving unit is disposed outside the chamber, and a first bellows through which the first shaft passes is provided between the first driving unit and the chamber.

7. In paragraph 5, A chemical vapor deposition device characterized in that a heat transfer path through which a heat transfer fluid passes is formed along the inner side of the first shaft.

8. In paragraph 4, In the above first ascending and descending shutter A chemical vapor deposition device characterized in that it has a curved portion corresponding to the bend portion of the above exhaust pipe.

9. In paragraph 3, The above opening and closing unit A chemical vapor deposition apparatus characterized by having a rotating shutter that is equipped to rotate and opens and closes the substrate input port.

10. In paragraph 9, The above opening and closing unit A chemical vapor deposition apparatus characterized by further comprising a second shaft for rotating the rotary shutter and a second driving unit for linearly moving the second shaft.

11. In paragraph 10, Connecting the second shaft and the rotary shutter to each other, A chemical vapor deposition device characterized in that it further comprises a rotation bar that converts the linear motion of the second shaft into a rotational motion to rotate the rotation shutter.

12. In paragraph 10, A chemical vapor deposition apparatus characterized in that the second driving unit is disposed outside the chamber, and a second bellows through which the second shaft passes is provided between the second driving unit and the chamber.

13. In paragraph 9, The above opening and closing unit A chemical vapor deposition apparatus characterized in that it further comprises a second elevation shutter that is provided so as to be able to be elevated and prevents the rotation shutter from rotating when the rotation shutter closes the substrate input port.

14. In paragraph 1, A chemical vapor deposition apparatus characterized in that it further comprises a lower plate provided inside the chamber on which a substrate or a susceptor on which the substrate is mounted is mounted, and an upper cover provided on the upper portion of the lower plate to form the processing space for the substrate.

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