Apparatus for processing substrate

Abstract

According to an embodiment of the present invention, an apparatus for processing a substrate comprises: a chamber forming an inner space in which a process for a substrate is performed; a gas injector installed in an upper portion of the chamber to supply gas toward the inner space; and a shower head installed in an upper portion of the inner space to be positioned under the gas injector, and having multiple injection holes injecting the gas supplied through the injector, wherein the gas injector includes: a main supply line of which one end is disposed toward the inner space to discharge the gas; and a first and a second branch line which are individually branched from the main supply line and are spaced apart from each other and through which a first and a second reaction gas flow, respectively.

Description

substrate processing device

[0001] The present invention relates to a substrate processing device, and more particularly, to a substrate processing device including a gas injector having a plurality of branch lines.

[0002] Amorphous thin films are used to fill contact holes or lines in semiconductor devices, and with the recent miniaturization of semiconductor devices, the requirements for filling contact holes or lines are becoming more stringent.

[0003] An object of the present invention is to provide a substrate processing device capable of sequentially supplying two or more gases during the process of forming a thin film.

[0004] Another object of the present invention is to provide a substrate processing device capable of minimizing damage caused by mixing gases in the process of supplying two or more gases.

[0005] Other objects of the present invention will become more apparent from the following detailed description and the accompanying drawings.

[0006] According to one embodiment of the present invention, a substrate processing device includes: a chamber forming an internal space in which a process for a substrate is performed; a gas injector installed at an upper portion of the chamber and supplying gas toward the internal space; and a showerhead installed at an upper portion of the internal space and positioned below the gas injector, the showerhead having a plurality of injection holes for injecting the gas supplied through the injector, wherein the gas injector has a main supply line having one end disposed toward the internal space and discharging the gas; and first and second branch lines branched and isolated from the main supply line, through which first and second reaction gases flow, respectively.

[0007] The above main supply line is arranged vertically in the vertical direction, and the first and second branch lines can be arranged radially based on the above main supply line.

[0008] The first and second branch lines may each branch off from the main supply line at different heights.

[0009] The first and second branch lines may form different acute angles with respect to the horizontal line.

[0010] The first and second branch lines may each branch off from the main supply line at the same height.

[0011] The first and second branch lines may form the same acute angle with respect to the horizontal line.

[0012] The above gas injector may have a ring-shaped lower groove that is sunken from the lower surface and arranged around the main supply line.

[0013] The chamber has a lower chamber with an open upper portion; and an upper chamber installed in the open upper portion of the lower chamber to form the internal space together with the lower chamber, and the upper chamber may have an injector port into which the gas injector is inserted and installed.

[0014] The substrate processing device may further include a first supply line connected to the first branch line and supplying an aminosilane-based gas; and a second supply line connected to the second branch line and supplying a silane-based gas that does not contain an amino group.

[0015] According to one embodiment of the present invention, two or more gases can be sequentially supplied through a gas injector, and when contamination occurs due to mixing of gases during the supply process, the gas injector can be replaced to minimize the resulting damage.

[0016]

[0017] In particular, process uniformity can be improved by changing the angle of inclination of the branch line by replacing the gas injector.

[0018] FIG. 1 is a schematic drawing of a substrate processing device according to one embodiment of the present invention.

[0019] FIG. 2 is a drawing showing a gas injector according to one embodiment of the present invention.

[0020] Figures 3 and 4 are drawings showing the state of use of the gas injector illustrated in Figure 2.

[0021] FIG. 5 is a drawing showing a gas injector according to another embodiment of the present invention.

[0022] Figures 6 and 7 are drawings showing the usage status of the gas injector illustrated in Figure 5.

[0023] Hereinafter, preferred embodiments of the present invention will be described in more detail with reference to the attached Figures 1 to 7. The embodiments of the present invention may be modified in various ways, and the scope of the present invention should not be construed as being limited to the embodiments described below. These embodiments are provided to provide a more detailed explanation of the present invention to those skilled in the art. Accordingly, the shapes of each element shown in the drawings may be exaggerated to emphasize a clearer explanation.

[0024]

[0025] FIG. 1 is a schematic diagram of a substrate processing device according to one embodiment of the present invention. As illustrated in FIG. 1, the substrate processing device includes a lower chamber (12) and an upper chamber (13). The lower chamber (12) has an open upper portion, and the upper chamber (13) is installed in the open upper portion of the lower chamber (12) to form an internal space blocked from the outside.

[0026]

[0027] A susceptor (20) is installed inside the lower chamber (12), and a support (22) is connected to the lower portion of the susceptor (20) to support the susceptor (20). A substrate (S) is placed on the susceptor (20), and the susceptor (20) is equipped with a heater (not shown) to heat the substrate (S) to a preset temperature. The substrate (S) can enter and exit the internal space through a passage (22a) formed on one side of the lower chamber (12), and a gate valve (not shown) is installed in the passage (22a) to open and close the passage (22a).

[0028]

[0029] The shower head (15) is attached to the lower part of the upper chamber (13), and the gas supplied from the gas injector (30) described later fills the buffer space (B) formed inside the shower head (15) and is then diffused and sprayed through a plurality of spray holes (15a).

[0030]

[0031] The gas injector (30) has a main supply line (36) that is vertically arranged in the center and opens downward, and first and second branch lines (32, 34) branched from the main supply line (36). In this embodiment, two branch lines are described as an example, but three or more branch lines may be formed as needed.

[0032]

[0033] The first branch line (32) is connected to the first supply line (40), and a first valve (40a), a first flow controller (40b), and a first gas supply source (40c) are installed in the first supply line (40). The first gas supply source (40c) may be an aminosilane-based gas, which is the first reaction gas, and may be, for example, any one of DIPAS (diisopropylaminosilane), TDMAS (trisdimethylaminosilane), and DEAS (diethylaminosilane).

[0034]

[0035] Likewise, the second branch line (34) is connected to the second supply line (50), and a second valve (50a), a second flow controller (50b), and a second gas supply source (50c) are installed in the second supply line (50). In addition, the third supply line (52) is branched from the second supply line (50), and a third valve (52a), a third flow controller (52b), and a third gas supply source (52c) are installed in the third supply line (52). The second gas supply source (50c) may be a silane-based gas that does not contain an amino group, which is the second reaction gas, and may be, for example, silane (SiH4) or disilane (Si2H6). The third gas supply source (50c) is an inert gas, and the third supply line (52) may be omitted depending on necessity.

[0036]

[0037] Fig. 2 is a drawing showing a gas injector according to one embodiment of the present invention. As illustrated in Fig. 2, the gas injector (30) has a step formed on its outer surface due to a difference in diameter. The upper chamber (13) described above has an injector port (13a) with a step formed therein, and the gas injector (30) can be seated within the injector port (13a) through the step.

[0038]

[0039] The main supply line (36) is located at the center of the gas injector (30) and is arranged vertically. The lower end of the main supply line (36) is located on the lower surface of the gas injector (30) and is open, so that the first and second reaction gases can be discharged through the lower end of the main supply line (36) and move to the buffer space of the showerhead (15). The upper end of the main supply line (36) can be closed.

[0040]

[0041] The first and second branch lines (32, 34) branch off from the main supply line (36), but branch off at different heights. The first branch line (32) branches off at a lower height than the second branch line (34), is radially arranged based on the center of the gas injector (30), and is inclined to form an acute angle (a) with respect to the horizontal line. The second branch line (34) also branches off, is radially arranged based on the center of the gas injector (30), and is inclined to form an acute angle (b) with respect to the horizontal line, but the inclination angle of the first branch line (32) may be greater than the inclination angle of the second branch line (34).

[0042]

[0043] Meanwhile, the gas injector (30) has an outlet (38) that is open toward the bottom, and the outlet (38) can be arranged around the main supply line (36). The outlet (38) is connected to a remote plasma source (not shown) to discharge plasma toward the showerhead (15), and the showerhead (15) can supply plasma to the internal space.

[0044]

[0045] Figures 3 and 4 are drawings showing the state of use of the gas injector illustrated in Figure 2. Referring to Figures 3 and 4, the process of forming an amorphous thin film using a gas injector is schematically explained as follows.

[0046]

[0047] A substrate (S) is placed on a susceptor (20), and a silicon oxide film or silicon nitride film may already be formed on the substrate (S).

[0048]

[0049] Next, a seed layer is formed on the surface of the substrate (S). While the substrate (S) is heated by the susceptor (20), the aminosilane gas stored in the first gas supply source (40c) is supplied to the showerhead (15) through the first branch line (32) and the main supply line (36) (Fig. 3), and the showerhead (15) sprays the aminosilane gas onto the substrate (S), thereby forming a seed layer on the surface of the substrate (S).

[0050]

[0051] Next, an amorphous thin film is formed on the seed layer. While the substrate (S) is heated by the susceptor (20), a silane gas not containing an amino group stored in the second gas supply source (50c) is supplied to the showerhead (15) through the second branch line (34) and the main supply line (36) (Fig. 4), and the showerhead (15) sprays the silane gas not containing an amino group onto the substrate (S), thereby forming an amorphous thin film on the surface of the substrate (S).

[0052]

[0053] At this time, as previously explained, the aminosilane gas is supplied through the first branch line (32) and then moves through the main supply line (36), and the silane gas that does not contain an amino group is supplied through the second branch line (34) and then moves through the main supply line (36), so that the main supply line (36), which is a space where different gases are mixed, can be minimized, and when contamination occurs due to mixing of gases, the gas injector (30) can be simply replaced to minimize the damage caused by the contamination.

[0054]

[0055] Meanwhile, as previously explained, the first and second branch lines (32, 34) may branch off from the main supply line (36) at different heights or at the same height, and the inclination angles of the first and second branch lines (32, 34) may be different or the same. As a result of actually using various types of gas injectors (30), it was confirmed that the uniformity of the amorphous thin film formed through the first and second reaction gases varies depending on the height at which the first and second branch lines (32, 34) branch off from the main supply line (36) or the inclination angles of the first and second branch lines (32, 34).

[0056]

[0057] Fig. 5 is a drawing showing a gas injector according to another embodiment of the present invention. Unlike the gas injector (30) illustrated in Fig. 2, the gas injector (30) illustrated in Fig. 5 has first and second branch lines (32, 34) branched at the same height from the main supply line (36), and the inclination angles of the first and second branch lines (32, 34) are the same.

[0058]

[0059] FIG. 6 and FIG. 7 are drawings showing the state of use of the gas injector illustrated in FIG. 5. As previously described with reference to FIG. 3 and FIG. 4, while the substrate (S) is heated by the susceptor (20), the aminosilane gas stored in the first gas supply source (40c) is supplied to the showerhead (15) through the first branch line (32) and the main supply line (36) (FIG. 6), and the showerhead (15) sprays the aminosilane gas onto the substrate (S), thereby forming a seed layer on the surface of the substrate (S). Next, while the substrate (S) is heated by the susceptor (20), the silane gas not containing an amino group stored in the second gas supply source (50c) is supplied to the showerhead (15) through the second branch line (34) and the main supply line (36) (Fig. 7), and the showerhead (15) sprays the silane gas not containing an amino group onto the substrate (S), thereby forming an amorphous thin film on the surface of the substrate (S).

[0060]

[0061] In conclusion, the structure of the gas injector (30), specifically the first and second branch lines (32, 34) of the gas injector (30), acts as a factor determining the process uniformity of the amorphous thin film, and the experimental results confirmed that the gas injector (30) illustrated in FIG. 5 brings about a more improved process uniformity.

[0062]

[0063] Therefore, after forming an amorphous thin film using a dummy substrate (S), the process uniformity of the thin film can be measured, and the process uniformity of the thin film can be adjusted by simply replacing it with a gas injector (30) having first and second branch lines (32, 34) of different shapes.

[0064]

[0065] While the present invention has been described in detail through preferred embodiments, other embodiments are possible. Therefore, the technical spirit and scope of the claims set forth below are not limited to the preferred embodiments.

[0066] The present invention can be applied to various types of semiconductor manufacturing equipment and manufacturing methods.

Claims

1. A chamber forming an internal space where a process for a substrate is performed; A gas injector installed at the upper portion of the chamber and supplying gas toward the internal space; and A showerhead is installed on the upper part of the internal space and is positioned below the gas injector, and includes a plurality of injection holes for injecting the gas supplied through the injector. The above gas injector, A main supply line is arranged toward the internal space and discharges the gas; and A substrate processing device having first and second branch lines, each branched off from the main supply line and isolated, and through which first and second reaction gases flow, respectively.

2. In paragraph 1, The above main supply line is arranged vertically in the up-down direction, A substrate processing device in which the first and second branch lines are radially arranged based on the main supply line.

3. In paragraph 2, A substrate processing device wherein the first and second branch lines branch off from the main supply line at different heights.

4. In paragraph 2 or 3, A substrate processing device wherein the first and second branch lines form different acute angles with respect to the horizontal line.

5. In paragraph 2, A substrate processing device, wherein the first and second branch lines are each branched at the same height from the main supply line.

6. In paragraph 2 or paragraph 5, A substrate processing device wherein the first and second branch lines form the same acute angle with respect to the horizontal line.

7. In paragraph 1, A substrate processing device, wherein the gas injector has a ring-shaped lower groove that is sunken from the lower surface and arranged around the main supply line.

8. In paragraph 1, The above chamber, a lower chamber with an open top; and It has an upper chamber installed in the open upper part of the lower chamber and forming the internal space together with the lower chamber. A substrate processing device, wherein the upper chamber has an injector port into which the gas injector is inserted.

9. In paragraph 1, The above substrate processing device, A first supply line connected to the first branch line and supplying aminosilane gas; and A substrate processing device further comprising a second supply line connected to the second branch line and supplying a silane gas that does not contain an amino group.

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