Copper-doped silicon carbide composite material, and preparation method therefor and use thereof

Abstract

The present application relates to the technical field of electromagnetic wave absorbing materials, and provides a copper-doped silicon carbide composite material, and a preparation method therefor and the use thereof. The preparation method for a copper-doped silicon carbide composite material provided in the present application comprises the following steps: performing arc plasma cracking on a precursor containing silicon and carbon, so as to obtain a copper-doped silicon carbide composite material, wherein the precursor containing silicon and carbon comprises an organic chlorosilane; and an anode used in the arc plasma cracking comprises copper. The copper-doped silicon carbide composite material prepared in the present application has excellent electromagnetic wave absorbing performance and a relatively large effective absorption bandwidth.

Description

Copper-doped silicon carbide composite material, preparation method and application thereof

[0001] The present application claims priority to the Chinese patent application No. 202411252473.0, filed on September 9, 2024, and entitled "Copper-doped silicon carbide composite material, preparation method and application thereof", the content of which is incorporated herein by reference. TECHNICAL FIELD

[0002] The present application relates to the technical field of electromagnetic wave absorbing materials, in particular to a copper-doped silicon carbide composite material, a preparation method and application thereof. BACKGROUND

[0003] Electromagnetic waves play an important role in modern information life, but with the development of technology leading to the large-scale popularity of electronic devices, the abundant electromagnetic waves can cause a certain degree of electromagnetic pollution, affecting the operation of precision instruments and endangering human health. With the development of national defense construction, higher requirements for the stealth of weapons and military facilities are put forward, so it is of great significance to study high-performance wave-absorbing materials for national defense and people's livelihood. In order to solve these problems, researchers have developed electromagnetic wave absorbing materials, which can convert electromagnetic energy into heat or other forms of energy, thereby consuming electromagnetic radiation from the source and protecting human health and improving the performance of equipment.

[0004] Electromagnetic wave absorbing materials are materials that can effectively absorb electromagnetic waves into the matrix and achieve high-efficiency attenuation, and the essence is to convert the energy of electromagnetic waves into internal energy and dissipate it. According to the different absorption mechanisms, the commonly used electromagnetic wave absorbing materials currently include magnetic loss materials and dielectric loss materials. Silicon carbide-based materials are common dielectric loss materials, but their intrinsic wave-absorbing performance is limited. SUMMARY

[0005] Therefore, the purpose of the present application is to provide a copper-doped silicon carbide composite material, a preparation method and application thereof. The copper-doped silicon carbide composite material prepared by the present application has excellent electromagnetic wave absorbing performance and a large effective absorption bandwidth.

[0006] In order to achieve the above-mentioned purpose of the application, the present application provides the following technical solutions:

[0007] The present application provides a preparation method of a copper-doped silicon carbide composite material, comprising the following steps:

[0008] The silicon-carbon-containing precursor is subjected to arc plasma cracking to obtain a copper-doped silicon carbide composite material; the silicon-carbon-containing precursor comprises an organic chlorosilane; the anode used in the arc plasma cracking comprises copper.

[0009] Preferably, the arc power of the arc plasma cracking is 1-100 kW.

[0010] Preferably, the arc atmosphere gas for the arc plasma cracking comprises one or more of argon, nitrogen, hydrogen and helium.

[0011] Preferably, the flow rate of the arc atmosphere gas is 0.2-30 L / min.

[0012] Preferably, the organochlorosilane comprises one or more of methyltrichlorosilane, dimethyldichlorosilane and trimethylchlorosilane.

[0013] Preferably, the feeding amount of the silicon-carbon-containing precursor is 0.1-2000 g / min.

[0014] Preferably, after the arc plasma cracking, the obtained solid product is sequentially subjected to alkali washing and drying to obtain a copper-doped silicon carbide composite material.

[0015] The application provides a copper-doped silicon carbide composite material prepared by the preparation method.

[0016] Preferably, the crystal form of the silicon carbide in the copper-doped silicon carbide composite material is β type.

[0017] Preferably, the particle size of the copper-doped silicon carbide composite material is 20-500 nm.

[0018] Preferably, the copper in the copper-doped silicon carbide composite material is doped in the SiC lattice in the form of a copper-silicon solid solution.

[0019] The copper-silicon solid solution comprises Cu 6.69 Si and / or Cu3Si.

[0020] The application provides an application of the copper-doped silicon carbide composite material in a wave-absorbing material.

[0021] Preferably, the wave-absorbing material is an electromagnetic wave-absorbing material.

[0022] Preferably, the wave-absorbing material is a microwave-absorbing material.

[0023] The application provides a preparation method of copper-doped silicon carbide composite material, and the copper is used as an anode, and organic chlorosilane is introduced as raw material to prepare silicon carbide, and the high activity of Cl plasma is used to perform thermal excitation and chemical reaction stripping on the copper anode, so that the copper enters into the silicon carbide lattice, and the copper-doped silicon carbide composite material is obtained. In the application, the conductivity and magnetic properties of copper have good electromagnetic wave absorption capacity in the microwave frequency band, and can effectively convert electromagnetic wave energy into heat energy, so as to reduce or eliminate reflection and transmission, and improve the absorption rate of the material. At the same time, copper doping can introduce additional interfaces and lattice defects, increase the electromagnetic wave energy loss path of the material, and the multiple loss mechanisms help to expand the absorption bandwidth of the material. The copper-doped silicon carbide composite material prepared in the application has excellent microwave absorption performance and large effective absorption bandwidth. The preparation method provided in the application is simple and suitable for popularization and application.

[0024] The beneficial effects of the application are as follows:

[0025] The application uses organic chlorosilane as a silicon and carbon-containing precursor, which is low in price, safe and efficient, can provide silicon and carbon at the same time, and prepares silicon carbide; chlorine elements form chlorine plasma in the plasma, which has higher activity and excites more copper into the system;

[0026] The application uses the double effects of arc heat excitation and high reactivity of chlorine plasma to complete copper-doped silicon carbide;

[0027] The application obtains the dielectric parameters of the copper-doped silicon carbide composite material by means of a vector network analyzer, and calculates that the copper-doped silicon carbide composite material has excellent wave absorption performance and wide wave absorption bandwidth according to the transmission line theory;

[0028] The preparation method described in the application is continuous and efficient, and is a synthesis method that can be used on a large scale. BRIEF DESCRIPTION OF DRAWINGS

[0029] Fig. 1 is a preparation principle diagram of the copper-doped silicon carbide composite material in the application;

[0030] Fig. 2 is an XRD diagram of the copper-doped silicon carbide composite material prepared in examples 1-3 in the application;

[0031] Fig. 3 is a TEM diagram of the copper-doped silicon carbide composite material prepared in example 1 in the application;

[0032] Fig. 4 is an HRTEM diagram of the copper-doped silicon carbide composite material prepared in example 1 in the application;

[0033] Fig. 5 is a reflection loss value diagram of the copper-doped silicon carbide composite material prepared in example 1 in the application;

[0034] Fig. 6 is a diagram of the real part of the dielectric loss of the copper-doped silicon carbide composite material prepared in Example 1 of the present application;

[0035] Fig. 7 is a diagram of the imaginary part of the dielectric loss of the copper-doped silicon carbide composite material prepared in Example 1 of the present application;

[0036] Fig. 8 is a diagram of the tangent of the dielectric loss of the copper-doped silicon carbide composite material prepared in Example 1 of the present application;

[0037] Fig. 9 is a diagram of the real part of the magnetic loss of the copper-doped silicon carbide composite material prepared in Example 1 of the present application;

[0038] Fig. 10 is a diagram of the imaginary part of the magnetic loss of the copper-doped silicon carbide composite material prepared in Example 1 of the present application;

[0039] Fig. 11 is a diagram of the tangent of the magnetic loss of the copper-doped silicon carbide composite material prepared in Example 1 of the present application;

[0040] Fig. 12 is a schematic diagram of the structure of an arc plasma generator;

[0041] Fig. 13 is a diagram of the reflection loss of the copper-doped silicon carbide composite material prepared in Example 2;

[0042] Fig. 14 is a diagram of the reflection loss of the copper-doped silicon carbide composite material prepared in Example 3. DETAILED DESCRIPTION

[0043] The present application provides a method for preparing a copper-doped silicon carbide composite material, comprising the following steps:

[0044] The silicon-carbon-containing precursor is subjected to arc plasma cracking to obtain a copper-doped silicon carbide composite material; the silicon-carbon-containing precursor comprises an organic chlorosilane; the anode used in the arc plasma cracking comprises copper.

[0045] Unless otherwise specified, the materials and equipment used in the present application are commercially available in the art.

[0046] The present application subjects a silicon-carbon-containing precursor to arc plasma cracking to obtain a copper-doped silicon carbide composite material.

[0047] In the present application, the silicon-carbon-containing precursor includes an organic chlorosilane. In the present application, the organic chlorosilane preferably includes one or more of methyltrichlorosilane, dimethyldichlorosilane and trimethylchlorosilane. In the present application, the feeding amount of the silicon-carbon-containing precursor is preferably 0.1-2000 g / min, more preferably 0.175-2 g / min, further preferably 0.5-1 g / min, and in specific embodiments, the feeding amount of the silicon-carbon-containing precursor can be 0.5 g / min, 1 g / min, 2 g / min, 100 g / min, 500 g / min, 1000 g / min or 1500 g / min. In the present application, the use of carbon-chlorosilane as a carbon- and silicon-containing precursor for the preparation of silicon carbide, while taking advantage of the formation of plasma in a plasma environment in a highly active state, is conducive to improving the doping rate and doping effect of copper.

[0048] In the present application, the anode used in the arc plasma cracking includes copper, and specifically preferably a copper sleeve.

[0049] In the present application, the arc power of the arc plasma cracking is preferably 1-100 kW, more preferably 2-10 kW, and further preferably 5-8 kW, and in specific embodiments, the arc power of the arc plasma cracking can be 1.6 kW, 2.2 kW, 2.9 kW, 10 kW, 20 kW, 30 kW, 40 kW, 50 kW, 60 kW, 70 kW, 80 kW or 90 kW.

[0050] In the present application, the starting arc atmosphere gas of the arc plasma cracking preferably includes one or more of argon, nitrogen, hydrogen and helium, and more preferably argon. In the present application, the flow rate of the starting arc atmosphere gas of the arc plasma cracking is preferably 0.2-30 L / min, more preferably 1-20 L / min, and further preferably 2-10 L / min, and in specific embodiments, the flow rate of the starting arc atmosphere gas of the arc plasma cracking can be 1 L / min, 2 L / min, 5 L / min, 10 L / min, 15 L / min, 20 L / min or 25 L / min. In the present application, the use of the above-mentioned starting arc atmosphere gas creates a reaction atmosphere, and controls the reaction pressure, for the generation of an arc.

[0051] In the present application, after the arc plasma cracking, the obtained solid product is preferably sequentially subjected to alkali washing and drying to obtain a copper-doped silicon carbide composite material. In a specific embodiment of the present application, the arc plasma cracking forms gaseous copper-doped silicon carbide; and the gaseous copper-doped silicon carbide is cooled to a solid product in the arc plasma generator. In the present application, the alkali washing preferably uses a NaOH solution; and the concentration of the NaOH solution is preferably 0.01-1 mol / L, more preferably 0.1-0.5 mol / L. In the present application, the solid product and the NaOH solution are preferably used in a ratio of 2 g:100 mL. In the present application, the alkali washing is preferably performed under ultrasonic conditions; and the ultrasonic time is preferably 30 min. The present application removes HCl adsorbed on the surface of the solid product and residual raw materials by alkali washing. The present application preferably performs rinsing and suction filtration after the alkali washing. In the present application, the rinsing and suction filtration preferably uses water, more preferably deionized water. In a specific embodiment of the present application, the rinsing and suction filtration refers to washing while suction filtering. In the present application, the drying temperature is preferably 105°C; and the drying time is preferably 2 h. In the present application, the drying is preferably performed in a vacuum oven.

[0052] In a specific embodiment of the present application, the arc plasma cracking is performed in an arc plasma generator; the structure of the arc plasma generator is shown in FIG. 12; the anode of the arc plasma generator is a copper sleeve, and the cathode is a rod-shaped structure; and the material of the cathode is graphite. In the present application, the preparation method of the copper-doped silicon carbide composite material preferably comprises the following steps: using an organic chlorosilane as a silicon-carbon-containing precursor, starting an arc under the action of an arc atmosphere gas, using a copper sleeve as an anode, cracking the silicon-carbon-containing precursor in a plasma environment by an arc plasma method to obtain a solid product, removing HCl adsorbed on the surface of the solid product and residual raw materials by NaOH solution alkali washing, and obtaining a copper-doped silicon carbide composite material after rinsing, suction filtration and drying.

[0053] As an embodiment of the present application, the preparation method of the copper-doped silicon carbide composite material comprises the following steps: replacing the air in the arc plasma generator with argon, starting the power to ignite the arc in the argon atmosphere, after the operation is stable, carrying the methyltrichlorosilane in the bubbler into the interior of the arc plasma generator by argon for cracking to form gaseous copper-doped silicon carbide, and depositing the gaseous copper-doped silicon carbide in the interior of the arc plasma generator along the direction of the plasma jet to collect a solid product, removing HCl adsorbed on the surface of the solid product and residual raw materials by NaOH solution alkali washing, and obtaining a copper-doped silicon carbide composite material after rinsing, suction filtration and drying.

[0054] The application provides the copper-doped silicon carbide composite material prepared by the preparation method. 6.69 Si and Cu3Si. In the specific embodiments of the application, the surface residual copper chloride compounds such as CuCl2 formed by the oxidation of C1 are removed in the rinsing and suction filtration process.

[0055] The application provides the application of the copper-doped silicon carbide composite material in a wave-absorbing material, preferably as an electromagnetic wave-absorbing material, and more preferably as a microwave-absorbing material.

[0056] The technical solutions in the application will be clearly and completely described in combination with the embodiments in the application. Obviously, the described embodiments are only some of the embodiments of the application, but not all the embodiments. Based on the embodiments in the application, all the other embodiments obtained by a person of ordinary skill in the art without creative work fall within the protection scope of the application.

[0057] The structure of the arc plasma generator used in the embodiments is shown in FIG. 12, wherein the anode of the arc plasma generator is a copper sleeve, and the cathode is a rod structure; the material of the cathode is graphite.

[0058] FIG. 1 is a schematic diagram of the preparation of the copper-doped silicon carbide composite material in the copper sleeve by using the organic chlorosilane according to the application.

[0059] Embodiment 1

[0060] The air in the arc plasma generator is replaced by argon, and argon is continuously introduced at a flow rate of 2 L / min. The arc is ignited by starting the power supply in the argon atmosphere, and the arc power is set to 2.2 kW. After the operation is stable, the methyltrichlorosilane in the bubbler is brought into the arc plasma generator for cracking by argon, and the feeding amount is 175 mg / min. The gaseous copper-doped silicon carbide is formed, and the gaseous copper-doped silicon carbide is deposited in the arc plasma generator along the direction of the plasma jet. The solid product is collected;

[0061] The 2 g of the collected solid product was added to 100 mL of 0.5 mol / L NaOH solution and ultrasonically treated for 30 min, and then washed with deionized water while being filtered, and the obtained solid substance was placed in a vacuum oven at 105°C for 2 h to obtain a copper-doped silicon carbide composite material.

[0062] Example 2

[0063] The preparation method was basically the same as that of Example 1, except that the arc power was adjusted to 1.6 kW.

[0064] Example 3

[0065] The preparation method was basically the same as that of Example 1, except that the arc power was adjusted to 2.9 kW.

[0066] Test Example

[0067] Examples 1-3 illustrate the influence of different arc powers on the copper doping effect.

[0068] FIG. 2 is an XRD spectrum of the copper-doped silicon carbide composite material prepared under different arc powers according to the present application. As can be seen from FIG. 2, there are obvious characteristic peaks at 26.1°, 28.8°, 35.7°, 41.4°, 60.2° and 71.8°, wherein the peak at 26.1° is the diffraction surface of the graphite (002) crystal plane, the peak at 28.8° is the diffraction surface of the CuCl2(111) crystal plane; the peaks at 35.7°, 41.4°, 60.2° and 71.8° correspond to the (111), (200), (220) and (311) crystal planes of β-SiC, respectively. Enlarging the range of 43°-50°, it is observed that the peaks at 43.2° and 46.3° correspond to the (002) and (101) crystal planes of Cu4Si5; the peaks at 44.6° and 45.2° correspond to the (012) and (300) crystal planes of Cu3Si. This indicates that various Cu-Si solid solutions appear in the composite material. Cu can quickly enter the β-SiC crystal lattice at high temperature to realize copper doping due to its high diffusion coefficient. 6.69 FIG. 3 is a TEM image of the copper-doped silicon carbide composite material prepared in Example 1 of the present application. It is found that there are obvious differences in contrast in the particles, and the particle size of the darker color is less than 10 nm.

[0069] FIG. 3 is a TEM image of the copper-doped silicon carbide composite material prepared in Example 1 of the present application. It is found that there are obvious differences in contrast in the particles, and the particle size of the darker color is less than 10 nm.

[0070] FIG. 4 is an HRTEM image of the copper-doped silicon carbide composite material prepared in Example 1 of the present application. By comparing the parameters of the standard card, it can be determined that a copper-silicon solid solution is formed, which proves the feasibility of the method for preparing the copper-doped silicon carbide composite material.

[0071] Figure 5 is a graph of the reflection loss value of the copper-doped silicon carbide composite material prepared in Example 1 of the present application. As can be seen from the graph, the copper-doped silicon carbide composite material has a RLmin value of -44.56 dB at 14.52 GHz when the matching thickness is 8 mm, and a maximum absorption bandwidth of up to 5.2 GHz, reaching the strength index (RLmin <-30 dB) of an excellent wave-absorbing material, indicating that the copper-doped silicon carbide composite material exhibits excellent wave-absorbing performance.

[0072] Figure 6 is a graph of the real part value of the dielectric loss of the copper-doped silicon carbide composite material prepared in Example 1 of the present application. The overall value decreases within the test waveband (2-18 GHz).

[0073] Figure 7 is a graph of the imaginary part value of the dielectric loss of the copper-doped silicon carbide composite material prepared in Example 1 of the present application. The value decreases within the 2-8 GHz frequency band, and then increases within the 8-18 GHz range, indicating that the copper-doped silicon carbide composite material has directionality in the loss of high-frequency electric fields.

[0074] Figure 8 is a graph of the tangent value of the dielectric loss of the copper-doped silicon carbide composite material prepared in Example 1 of the present application. The value increases significantly within the 15-17 GHz range.

[0075] Figure 9 is a graph of the real part value of the magnetic loss of the copper-doped silicon carbide composite material prepared in Example 1 of the present application. The value fluctuates slightly within the 2-18 GHz frequency band, and slowly changes between 0.9 and 1.1.

[0076] Figure 10 is a graph of the imaginary part value of the magnetic loss of the copper-doped silicon carbide composite material prepared in Example 1 of the present application. The value fluctuates significantly within the 2-18 GHz frequency band.

[0077] Figure 11 is a graph of the tangent value of the magnetic loss of the copper-doped silicon carbide composite material prepared in Example 1 of the present application. The value fluctuates significantly within the 2-18 GHz frequency band.

[0078] In combination with Figures 1-11, the copper-doped silicon carbide composite material has a RLmin value of -44.56 dB at 14.52 GHz when the matching thickness is 8 mm, and a maximum absorption bandwidth of up to 5.2 GHz, reaching the strength index (RLmin <-30 dB) of an excellent wave-absorbing material, indicating that the copper-doped silicon carbide composite material exhibits excellent wave-absorbing performance. At the same time, the tangent value of the magnetic loss is greater than the tangent value of the dielectric loss, indicating that the magnetic loss of the copper-doped silicon carbide composite material dominates its overall energy loss, which indirectly proves that the copper is doped into the nano-silicon carbide composite material, exhibiting a similar magnetic loss mechanism to magnetic materials such as iron, cobalt, and nickel.

[0079] Fig. 13 is a graph of the reflectance loss value of the copper-doped silicon carbide composite material prepared in Example 2, and Fig. 14 is a graph of the reflectance loss value of the copper-doped silicon carbide composite material prepared in Example 3. In combination, Figs. 13 and 14 show that the copper-doped silicon carbide composite material prepared in the present application has excellent microwave absorption performance.

[0080] According to the preparation process of the copper-doped silicon carbide composite material and the test results of the microwave absorption performance, the copper-doped silicon carbide composite material prepared in Example 1 under the condition of an arc power of 2.2 kW has the optimal wave absorption performance.

[0081] Influence of different arc atmosphere gases on the copper doping effect in Examples 4-6

[0082] The air in the arc plasma generator was replaced with argon, and an arc atmosphere gas with a flow rate of 2 L / min was continuously introduced. The power supply was started to ignite the arc in the argon atmosphere, and the arc power was set to 5 kW. After stable operation, the methyltrichlorosilane in the bubbler was brought into the arc plasma generator by the arc atmosphere gas for cracking, with a feeding amount of 0.5 g / min. Gaseous copper-doped silicon carbide was formed, and the gaseous copper-doped silicon carbide was deposited in the arc plasma generator along the direction of the plasma jet to collect a solid product.

[0083] 2 g of the collected solid product was added to 100 mL of a NaOH solution with a concentration of 0.5 mol / L, and ultrasonic treatment was performed for 30 min. The solid product was washed with deionized water while being filtered, and the obtained solid material was placed in a vacuum oven at 105°C for 2 h to obtain a copper-doped silicon carbide composite material.

[0084] According to the test results of Examples 4-6, the copper doping effects of different arc atmosphere gases are similar.

[0085] Influence of different organochlorosilanes on the copper doping effect in Examples 7-9

[0086] The air in the arc plasma generator was replaced with argon, and argon with a flow rate of 2 L / min was continuously introduced. The power supply was started to ignite the arc in the argon atmosphere, and the arc power was set to 5 kW. After stable operation, the organochlorosilane (methyltrichlorosilane, dimethyldichlorosilane, and trimethylchlorosilane in Examples 7, 8, and 9, respectively) in the bubbler was brought into the arc plasma generator by the argon for cracking, with a feeding amount of 0.5 g / min. Gaseous copper-doped silicon carbide was formed, and the gaseous copper-doped silicon carbide was deposited in the arc plasma generator along the direction of the plasma jet to collect a solid product.

[0087] 2g of the collected solid product was added to 100mL of 0.5mol / L NaOH solution and ultrasonically treated for 30min, and then washed with deionized water by suction filtration. The obtained solid substance was placed in a vacuum oven at 105℃ for 2h to obtain a copper-doped silicon carbide composite material.

[0088] According to the test results of Examples 7-9, the carbon-containing organochlorosilane can successfully prepare a copper-doped silicon carbide composite material, wherein the stoichiometric ratio of carbon to silicon in methyltrichlorosilane is 1:1, which can provide silicon atoms and carbon atoms according to the chemical formula of silicon carbide (SiC), and is a preferred organochlorosilane raw material.

[0089] Effect of different feeding amounts on copper doping effect in Examples 10-12

[0090] The air in the arc plasma generator was replaced with argon, and argon was continuously introduced at a flow rate of 2L / min. The power supply was started to ignite the arc in an argon atmosphere, and the arc power was set to 10kW. After stable operation, methyltrichlorosilane in the bubbler was brought into the arc plasma generator for cracking by argon. The feeding amounts of Examples 10, 11 and 12 were 0.5g / min, 1g / min and 5g / min, respectively. Gaseous copper-doped silicon carbide was formed, and the gaseous copper-doped silicon carbide was deposited inside the arc plasma generator along the direction of the plasma jet. Solid products were collected.

[0091] 2g of the collected solid product was added to 100mL of 0.5mol / L NaOH solution and ultrasonically treated for 30min, and then washed with deionized water by suction filtration. The obtained solid substance was placed in a vacuum oven at 105℃ for 2h to obtain a copper-doped silicon carbide composite material.

[0092] According to the test results of Examples 10-12, for a 10kW arc power, to ensure the copper doping effect while improving energy utilization, the preferred feeding amount is 1g / min.

[0093] The above only describes the preferred embodiments of the present application. It should be noted that for those skilled in the art, without departing from the principles of the present application, a number of improvements and refinements can be made, which should also be considered as the protection scope of the present application.

Claims

1. A method for preparing a copper-doped silicon carbide composite material, comprising the steps of: performing arc plasma pyrolysis on a silicon-carbon-containing precursor to obtain a copper-doped silicon carbide composite material; wherein the silicon-carbon-containing precursor comprises an organochlorosilane; and the anode used in the arc plasma pyrolysis comprises copper.

2. The method of claim 1, wherein the arc power of the arc plasma pyrolysis is 1-100 kW.

3. The method of claim 1, wherein the arc atmosphere gas used in the arc plasma pyrolysis comprises one or more of argon, nitrogen, hydrogen, and helium.

4. The method of claim 1, wherein the flow rate of the arc atmosphere gas is 0.2-30 L / min.

2. The production method according to claim 1, characterized by, 5. The method of claim 1, wherein the organochlorosilane comprises one or more of methyltrichlorosilane, dimethyldichlorosilane, and trimethylchlorosilane.

3. The preparation method according to claim 1, characterized in that, 6. The method of claim 1, wherein the feeding amount of the silicon-carbon-containing precursor is 0.1-2000 g / min.

4. The production method according to claim 3, characterized by, 7. The method of claim 1, wherein the arc plasma pyrolysis is followed by sequentially performing alkali washing and drying on the obtained solid product to obtain the copper-doped silicon carbide composite material.

5. The preparation method according to claim 1, characterized in that, 8. A copper-doped silicon carbide composite material prepared by the method of any one of claims 1-7.

6. The production method according to claim 1 or 5, characterized by, 9. The copper-doped silicon carbide composite material of claim 8, wherein the crystal form of silicon carbide in the copper-doped silicon carbide composite material is β-type.

7. The preparation method according to claim 1, characterized in that, 10. The copper-doped silicon carbide composite material of claim 8, wherein the particle size of the copper-doped silicon carbide composite material is 20-500 nm.

11. The copper-doped silicon carbide composite material of claim 8, wherein the copper in the copper-doped silicon carbide composite material is doped in the SiC lattice in the form of a copper-silicon solid solution.

9. The copper-doped silicon carbide composite material of claim 8, wherein, 12. Use of the copper-doped silicon carbide composite material of claims 8-11 in a wave-absorbing material.

10. The copper-doped silicon carbide composite material of claim 8 or 9, wherein, 13. The wave-absorbing material of claim 12, wherein the wave-absorbing material is an electromagnetic wave-absorbing material.

11. The copper-doped silicon carbide composite material of claim 10, wherein, 14. The wave-absorbing material of claim 12, wherein the wave-absorbing material is a microwave-absorbing material. The copper-silicon solid solution comprises Cu 6.69 Si and / or Cu3Si. ​ 13. The use according to claim 12, wherein the compound is ###0002### ​ 14. Use according to claim 12 or 13, wherein the compound is ###0002### ​