Use of polytelluoxane in non-chemically amplified photoresist

Abstract

The use of a polytelluoxane in a non-chemically amplified photoresist. The polytelluoxane has a Te-O chain. By means of the high absorption of EUV by Te therein and a special Te-O main chain, the present invention aims at achieving excellent UV photoetching (I-line, KrF, ArF, etc.), electron beam photoetching and EUV photoetching performance, especially addressing the challenge of a EUV photoresist balancing high sensitivity, high resolution and low line edge roughness all at the same time.

Description

Application of polytellurooxane in non-chemically amplified photoresist

[0001] Priority information

[0002] The present disclosure claims priority to and the benefit of Chinese Patent Application No. 202411296105.6, filed September 14, 2024, to the China National Intellectual Property Office, and incorporates it herein by reference in its entirety. TECHNICAL FIELD

[0003] The present disclosure relates to the field of photoresist technology, in particular to the application of polytellurooxane in non-chemically amplified photoresist. BACKGROUND

[0004] Lithography technology is the foundation of the semiconductor industry, and its essence is a technology that uses photochemical reactions to produce micro-nano structures. Among them, the photoresist undergoes solubility change through exposure, and the solubility difference between the exposed part and the unexposed part is developed in a specific organic solvent or aqueous solution, and the corresponding micro-nano structure can be obtained. The exposed part dissolves is called positive photoresist, and the exposed part dissolves is called negative photoresist.

[0005] With the continuous advancement of Moore's law, the demand for feature size miniaturization of integrated circuits has driven the development of lithography technology. The exposure wavelength of lithography technology has experienced G-line (436 nm), I-line (365 nm), KrF (248 nm), ArF (193 nm), and gradually developed towards shorter wavelengths. In recent years, extreme ultraviolet (EUV, 13.5 nm) lithography technology has greatly promoted the update iteration of the chip manufacturing industry and has become the most promising nanoscale manufacturing technology. However, the limited EUV light source power and the energy loss of the multilayer mirror system have put forward very high requirements for the sensitivity of the photoresist. In addition, the high-resolution patterning of EUV requires the photoresist material to also have good resolution and line edge roughness. Therefore, developing new photoresists suitable for EUV lithography is still a great challenge.

[0006] Conventional ultraviolet (UV) lithography generally uses chemically amplified resists (CARs) that contain an acid-sensitive polymer matrix and a photoacid generator. For example, in polystyrene-based CARs, the photoacid generator generates protons in situ after exposure, which can catalyze a deprotection reaction to release phenol structures that are soluble in alkaline solutions. CARs have been used in extreme ultraviolet (EUV) lithography, but their shortcomings become more apparent as feature sizes shrink. CARs are composed mainly of low-Z elements, which have poor absorption of EUV at 13.5 nm; at the same time, as the pattern size decreases, the thickness of the resist film also decreases, and the problem of poor absorption becomes more pronounced. In addition, the complex working mechanism and multiple components of CARs mean that the randomness of the location and amount of each component can cause significant chemical noise, leading to pattern roughness, unclear structure, size variation, and pattern defects. This requires us to develop resist materials and working modes that are more suitable for EUV lithography.

[0007] In recent years, in order to avoid the above problems, non-chemically amplified resists (non-CARs) have gradually received attention, such as polymer-based main-chain scission type resists with good film-forming properties and stability. The principle is that EUV is absorbed by the resist to produce secondary electrons, which can cut the polymer main chain and produce small molecules with better solubility, thereby removing the exposed area. Main-chain scission type resists do not require the introduction of a photoacid generator, so there are fewer components and less chemical noise, which can reduce line edge roughness. The earliest main-chain scission type resist, which is also the earliest resist applied to EUV lithography, is polymethyl methacrylate (PMMA). After exposure, it will undergo main-chain C-C bond scission or ester bond scission to produce small organic molecules or oligomers, which have larger solubility and are more easily dissolved in the developer. However, main-chain scission type resists require a larger exposure dose because there is no chemical amplification process to assist and the polymer main chain has a relatively large bond energy, which limits their application in high-sensitivity EUV lithography. Therefore, solving the problem of weak EUV absorption of resists is the key to the development of main-chain scission type resists. SUMMARY

[0008] The inventors have found that metal-based EUV resists have appeared in the prior art. These systems generally have higher absorption than CARs, but are all negative resists. There is still a need for positive resists with high EUV absorption for specific pattern types.

[0009] To solve the above-mentioned related technical problems, the main purpose of the present disclosure is to provide a polytellurouxe-based non-chemically amplified photoresist, which utilizes the high absorption of Te element to EUV and the special Te-O main chain, aims to achieve excellent UV lithography (I-line, KrF, ArF, etc.), electron beam lithography and EUV lithography performance, especially to solve the problem of EUV photoresist with high sensitivity, high resolution and low line edge roughness.

[0010] In an aspect of the present disclosure, the present disclosure proposes the application of polytellurouxe in non-chemically amplified photoresist. According to the embodiments of the present disclosure, the polytellurouxe has a Te-O chain. The non-chemically amplified photoresist utilizes the high absorption of Te element to EUV and the special Te-O main chain, aims to achieve excellent UV lithography (I-line, KrF, ArF, etc.), electron beam lithography and EUV lithography performance, especially to solve the problem of EUV photoresist with high sensitivity, high resolution and low line edge roughness.

[0011] According to the embodiments of the present disclosure, the above-mentioned application can further include at least one of the following accessory technical features:

[0012] According to the embodiments of the present disclosure, the polytellurouxe is a polymer composed of monomers with the structure shown in formula (V),

[0013] wherein R1, R2 are independently selected from hydrogen, hydroxyl, amino, mercapto, optionally substituted C1-C8 alkyl, optionally substituted C2-C8 alkenyl, optionally substituted C2-C8 alkynyl, optionally substituted C1-C8 heteroalkyl, optionally substituted C2-C8 heteroalkenyl, optionally substituted C2-C8 heteroalkynyl, optionally substituted aryl, or has the structure shown in formula (II), 20 alkyl, optionally substituted C2-C 20 alkenyl, optionally substituted C2-C 20 alkynyl, optionally substituted C1-C 20 heteroalkyl, optionally substituted C2-C 20 heteroalkenyl, optionally substituted C2-C 20 heteroalkynyl, optionally substituted aryl, or has the structure shown in formula (II),

[0014] R3 is selected from hydroxyl, amino, cyano, optionally substituted aryl, and x is any integer between 1 and 20;

[0015] or R1 and R2 are connected together to form a monomer with the structure shown in formula (VI),

[0016] R4 is selected from optionally substituted C1-C8 alkyl, optionally substituted C2-C8 alkenyl, optionally substituted C2-C8 alkynyl, optionally substituted C1-C8 heteroalkyl, optionally substituted C2-C8 heteroalkenyl, optionally substituted C2-C8 heteroalkynyl.

[0017] According to an embodiment of the present disclosure, the polytellurouxe has a structure as shown in formula (I):

[0018] n is any integer between 2-5000.

[0019] According to an embodiment of the present disclosure, the polytellurouxe has a structure as shown in formula (III):

[0020] n is any integer between 2-5000.

[0021] According to an embodiment of the present disclosure, the polytellurouxe can be a copolymer of two or more monomers, i.e. R1, R2 in different repeating units are also independently selected from the above-mentioned groups, not necessarily completely the same. Taking a copolymer of two monomers as an example, according to an embodiment of the present disclosure, the polytellurouxe has a structure as shown in formula (IV):

[0022] wherein R1', R1" are independently selected from R1, R2', R2" are independently selected from R2, and m, p are independently any integer between 1-5000.

[0023] According to an embodiment of the present disclosure, the above-mentioned polytellurouxe structural formula (I), (III), (IV) are only schematic diagrams for convenience of explanation, and are not used to limit the protection scope of the present disclosure. Since Te-O chain is the core of the non-chemically amplified photoresist performance described in the present disclosure, copolymerization, blending, etc. of Te-O chain structure with other components can also improve the performance of the photoresist. Therefore, for those skilled in the art, the present disclosure can have various changes, modifications and improvements on the basis of the above-mentioned polytellurouxe.

[0024] According to an embodiment of the present disclosure, R1, R2 are independently selected from optionally substituted C1-C4 alkyl, optionally substituted C2-C4 alkenyl, optionally substituted C2-C4 alkynyl, or optionally substituted aryl. 12 According to an embodiment of the present disclosure, R1, R2 are independently selected from optionally substituted C1-C4 alkyl, optionally substituted C2-C4 alkenyl, optionally substituted C2-C4 alkynyl, or optionally substituted aryl. 12 According to an embodiment of the present disclosure, R1, R2 are independently selected from optionally substituted C1-C4 alkyl, optionally substituted C2-C4 alkenyl, optionally substituted C2-C4 alkynyl, or optionally substituted aryl. 12 According to an embodiment of the present disclosure, R1, R2 are independently selected from optionally substituted C1-C4 alkyl, optionally substituted C2-C4 alkenyl, optionally substituted C2-C4 alkynyl, or optionally substituted aryl.

[0025] According to an embodiment of the present disclosure, R1, R2 are independently selected from optionally substituted C1-C4 alkyl, optionally substituted C2-C4 alkenyl, optionally substituted C2-C4 alkynyl, or optionally substituted aryl.

[0026] According to an embodiment of the present disclosure, R1, R2 are independently selected from optionally substituted C1-C4 alkyl, optionally substituted C2-C4 alkenyl, optionally substituted C2-C4 alkynyl, or optionally substituted aryl.

[0027] According to an embodiment of the present disclosure, R1 is phenyl, and R2 is C1-C4 alkyl, C2-C4 alkenyl or C2-C4 alkynyl.

[0028] According to an embodiment of the present disclosure, the polytellurouxe is n is 150.

[0029] According to an embodiment of the present disclosure, the polytellurouxe is n is 150.

[0030] According to an embodiment of the present disclosure, the polytellurouxe is n is 150.

[0031] According to an embodiment of the present disclosure, the polytellurouxe is n is 50.

[0032] According to an embodiment of the present disclosure, the polytellurouxe is n is 50.

[0033] According to an embodiment of the present disclosure, the polytellurouxe is n is 50.

[0034] According to an embodiment of the present disclosure, the application is achieved by the following way:

[0035] After cleaning the substrate, a solution of the polytellurouxe is coated on the substrate, and the solvent is removed by baking, and then the substrate is subjected to UV lithography, electron beam lithography or EUV lithography, and then developed using a developer to obtain a corresponding pattern.

[0036] According to an embodiment of the present disclosure, the material of the substrate is germanium, silicon, silicon carbide, silicon nitride, gallium arsenide or gallium nitride.

[0037] According to an embodiment of the present disclosure, the cleaning of the substrate is performed by using acetone and ultrasonic cleaning of the substrate.

[0038] According to an embodiment of the present disclosure, the solvent of the solution of the polytellurouxe is one or more mixed solvents selected from ethyl acetate, dichloromethane, chloroform, tetrahydrofuran, 2-hexanone, dimethylformamide and benzyl ether.

[0039] According to an embodiment of the present disclosure, the concentration of the solution of the polytellurouxe is 1-50 mg / mL.

[0040] According to an embodiment of the present disclosure, the concentration of the solution of the polytellurouxe is 6-20 mg / mL.

[0041] According to an embodiment of the present disclosure, the coating of the solution of the polytellurouxe on the substrate is performed by using a spin coating method, and the polytellurouxe solution is coated on the substrate by using a spin coater.

[0042] According to an embodiment of the present disclosure, the spin coating method adopts a rotation speed of 2000-5000 rpm for 20-60 s.

[0043] According to an embodiment of the present disclosure, the baking temperature is 60-120℃ for 1-10 minutes.

[0044] According to an embodiment of the present disclosure, the UV lithography dose is 1-1000 mJ / cm 2 .

[0045] According to an embodiment of the present disclosure, the electron beam lithography dose is 1-500 μC / cm 2 .

[0046] According to an embodiment of the present disclosure, the EUV lithography dose is 1-100 mJ / cm 2 .

[0047] According to an embodiment of the present disclosure, the developing agent is one or more mixed solvents selected from isopropyl alcohol, ethanol, methanol and water.

[0048] Another aspect of the present disclosure provides a patterning process and method of polytelluroxane in UV lithography (I-line, KrF, ArF, etc.), electron beam lithography and EUV lithography, which can be used to transfer a pattern to a photoresist layer. The specific process and method are as follows:

[0049] After cleaning the substrate, a solution of polytelluroxane is coated on the substrate and baked to remove the solvent. The substrate is exposed to UV, electron beam or EUV light at a certain dose, and then developed using a developing agent to obtain the corresponding pattern.

[0050] According to an embodiment of the present disclosure, acetone is used for cleaning the substrate.

[0051] According to an embodiment of the present disclosure, the solvent of the polytelluroxane solution is one or more mixed solvents selected from ethyl acetate, dichloromethane, chloroform, tetrahydrofuran, 2-hexanone, dimethylformamide and anisole.

[0052] According to an embodiment of the present disclosure, the concentration of the polytelluroxane solution is 1-50 mg / mL.

[0053] According to an embodiment of the present disclosure, the concentration of the polytelluroxane solution is 6-20 mg / mL.

[0054] According to an embodiment of the present disclosure, a spin coating method is used to coat the polytelluroxane solution on the substrate using a film applicator.

[0055] According to an embodiment of the present disclosure, the spin coating method adopts a typical rotation speed of 2000-5000 rpm for 20-60 seconds, and other rotation speeds can also be used to prepare thin films of different thicknesses.

[0056] According to an embodiment of the present disclosure, the baking temperature is 60-120°C for 1-10 minutes.

[0057] According to an embodiment of the present disclosure, the UV lithography (I-line, KrF, ArF, etc.) dose is 1-1000 mJ / cm 2 , the electron beam lithography dose is 1-500 μC / cm 2 , and the EUV lithography dose is 1-100 mJ / cm 2 .

[0058] According to an embodiment of the present disclosure, the developer is a mixed solvent of one or more of isopropyl alcohol, ethanol, methanol, and water.

[0059] In still another aspect of the present disclosure, the present disclosure also provides a preparation method of polytellurides:

[0060] The one or more organic tellurium ethers are dissolved in an organic solvent, an aqueous hydrogen peroxide solution is added and stirred, and interfacial oxidative polymerization is performed to obtain the polytellurides.

[0061] According to an embodiment of the present disclosure, the above method can further include at least one of the following additional technical features:

[0062] According to an embodiment of the present disclosure, the organic tellurium ether has a structure represented by general formula (X):

[0063] R1-Te-R2 (X), wherein R1 and R2 are the same as defined above;

[0064] According to an embodiment of the present disclosure, R1 and R2 can be connected head-to-tail to form a ring, having a structure represented by general formula (XI):

[0065] wherein R4 is the same as defined above.

[0066] According to an embodiment of the present disclosure, the organic solvent is a mixed solvent of one or more of ethyl acetate, dichloromethane, chloroform, and tetrahydrofuran.

[0067] According to an embodiment of the present disclosure, the concentration of the organic tellurium ether in the organic solvent is 0.1-2 mol / L.

[0068] According to an embodiment of the present disclosure, the concentration of the aqueous hydrogen peroxide solution is 0.1-5 mol / L.

[0069] According to an embodiment of the present disclosure, the interface oxidation polymerization reaction temperature is 0-40℃, and the reaction time is 0.5-7 days.

[0070] According to an embodiment of the present disclosure, the product separation is performed by precipitating the organic solution of the product in a large amount of methanol, and methanol is used as the washing agent.

[0071] According to an embodiment of the present disclosure, the application of the polytelluroxane in the non-chemically amplified photoresist provided by the present disclosure has at least one of the following characteristics and beneficial effects:

[0072] According to an embodiment of the present disclosure, compared with the commonly used non-chemically amplified photoresist systems such as PMMA and hydrogenated silsesquioxane HSQ, the non-chemically amplified photoresist based on the polytelluroxane introduces the tellurium element with strong EUV absorption capacity into the system, which theoretically greatly increases the absorption of the material to EUV, and thus has higher sensitivity. In addition, the polytelluroxane has two parts of adjustable side chains R1 and R2, which can optimize the polymer structure according to the needs of the photolithography process, so as to obtain more excellent photolithography performance. For example, the rigid benzene ring is directly introduced into the Te atom, which can increase the rigidity of the Te-O high molecular weight whole and reduce the entanglement between the chains, which improves the problem of chain entanglement between the exposed part and the unexposed part in the development process.

[0073] The present disclosure provides a patterning process and method of a polytelluroxane in UV lithography (I-line, KrF, ArF, etc.), electron beam lithography and EUV lithography, which has at least one of the following characteristics and beneficial effects:

[0074] According to an embodiment of the present disclosure, the photolithography process based on the polytelluroxane is simple and easy to operate, and compared with the traditional chemically amplified photoresist system, it does not have a complex pre-baking and post-baking process flow, greatly shortens the overall time consumption of photolithography, and reduces the photolithography process cost. In addition, the photoresist system based on the polytelluroxane can be composed of at least one component, and the polymer has good forming processing performance and film forming performance. Compared with the photoresist system with multiple components such as chemically amplified and metal nanoparticle type, the polytelluroxane can more easily obtain a uniform and flat photoresist structure, reducing the generation of random defects. In addition, the polytelluroxane is simple to prepare and the raw materials are easy to obtain, so the overall process cost is low and has the application potential of large-scale production.

[0075] Term definition and explanation

[0076] Unless otherwise indicated, the definitions of groups and terms in the present disclosure and claims, including definitions of groups as examples, exemplary definitions, preferred definitions, definitions recited in tables, definitions of specific compounds in examples, etc., can be combined and combined with each other in any manner. The group definitions and compound structures after such combinations and combinations should be understood as within the scope recited in the present disclosure and / or claims.

[0077] In the present text, the term "optionally" means both that the feature is present or not present, which means that the event described later can but need not necessarily occur, thus including both cases where the event occurs or does not occur. For example, "heterocyclyl optionally substituted by alkyl" means that the alkyl group can but need not necessarily be present, thus including both cases of a heterocyclyl group substituted by alkyl and a heterocyclyl group not substituted by alkyl.

[0078] As described herein, the compounds of the present disclosure can contain "optionally substituted" moieties. In general, the term "substituted" means that the indicated moiety is either unsubstituted or substituted with suitable substituents, whether or not recited herein. Unless otherwise indicated, an "optionally substituted" group can have a suitable substituent at each substitutable position of the group, and when more than one position in any given structure can be substituted with a

[0079] Each optional substituent on a substitutable carbon is independently selected from the group consisting of monovalent substituents =0; cyano; C 1-6 alkyl; C 2-6 alkenyl; C 2-6 alkynyl; haloC 1-6 alkyl, C 1-6 alkoxy; halo; -(CH2) 0-4 Ro; -(CH2) 0-4 ORo; -O(CH2) 0-4 Ro; -O-(CH2) 0-4 C(O)ORo; -(CH2) 0-4 CH(ORo)2; -(CH2) 0-4 SRo; -(CH2) 0-4 Ph, which can be substituted with Ro; -(CH2) 0-4 O(CH2) 0-1Ph, which can be substituted with Ro; -CH=CHPh, which can be substituted with Ro; -(CH2) 0-4 O(CH2)0-1-pyridyl, which can be substituted with Ro; -NO2; -CN; -N3; -(CH2) 0-4 N(Ro)2; -(CH2) 0-4 N(Ro)C(O)Ro; -N(Ro)C(S)Ro; -(CH2) 0-4 N(Ro)C(O)NRo2; -N(Ro)C(S)NRo2; -(CH2) 0-4 N(Ro)C(O)-ORo; -N(Ro)N(Ro)C(O)Ro; -N(Ro)N(Ro)C(O)NRo-2; -N(Ro)N(Ro)C(O)ORo; -(CH2) 0-4 C(O)Ro; -C(S)-Ro; -(CH-2) 0-4 C(O)ORo; -(CH2) 0-4 C(O)SRo; -(CH2) 0-4 C(O)OSiRo3; -(CH2) 0-4 OC(O)Ro; -OC(O)-(CH-2) 0-4 SR-; SC(S)SRo; -(CH2) 0-4 SC(O)Ro; -(CH2) 0-4 C(O)NRo2; -C(S)NRo2; -C(S)SRo; -SC(S)-SRo; -(CH2) 0-4 OC(O)NRo2; -C(O)N(ORo)Ro; -C(O)C(O)Ro; -C(O)CH2C(O)Ro; -C(NORo)Ro; --(CH2) 0-4 SSRo; -(CH2) 0-4 S(O)2Ro; -(CH2) 0-4 S(O)2ORo; -(CH2) 0-4 OS(O)2Ro; -S(O)2NRo2; -S(O)-(NRo)Ro; -S(O)2NC(NRo2)2; -(CH2) 0- 4S(O)Ro; -N(Ro)S(O)2NRo2; -N(Ro)S(O)2Ro; -N(ORo)Ro; -C(NH)NRo2; -P(O)2Ro; -P(O)Ro2; -OP(O)Ro2; -OP(O)(ORo)2; SiRo3; -(C 1-4 straight or branched alkylene)O-N(Ro)2; or -(C 1-4 straight or branched alkylene)C(O)O-N(Ro)2.

[0080] each R° is independently hydrogen, C 1-6 aliphatic, -CH2Ph, -O(CH2) 0-1 Ph, -CH2-(5-6 membered heteroaryl ring) or a 5-6 membered saturated, partially unsaturated, or aryl ring having 0-4 heteroatoms independently selected from nitrogen, oxygen, or sulfur, or notwithstanding the definition above, two independently occurring R°, together with their intervening atoms, form a 3-12 membered saturated, partially unsaturated or aryl monocyclic or bicyclic ring having 0-4 heteroatoms independently selected from nitrogen, oxygen, or sulfur, which can be substituted at a saturated carbon of R° with a divalent substituent selected from =0 and =S; or each R° is optionally substituted with a monovalent substituent independently selected from the group consisting of halogen, -(CH2) 0-2 R, -(haloR), -(CH2) 0-2 OH, -(CH2) 0-2 OR, -(CH2) 0-2 CH(OR)2, -CN, -N3, -O(haloR), -(CH2) 0-2 C(O)R, -(CH2) 0-2 C(O)OH, -(CH2) 0-2 C(O)OR, -(CH2) 0-2 SR·, -(CH2) 0-2 SH, -(CH2) 0-2 NH2, -(CH2) 0-2 NHR, -(CH2) 0-2 NR2, -NO2, -SiR3, -OSiR3, -C(O)SR, -(C 1-4 linear or branched alkylene)C(O)OR, or -SSR.

[0081] each R· is independently selected from the group consisting of C1-4aliphatic, -CH2Ph, -O(CH2)o-iPh, or a 5-6 membered saturated, partially unsaturated, or aryl ring having 0-4 heteroatoms independently selected from nitrogen, oxygen, or sulfur, and wherein each R· is unsubstituted or substituted at a saturated carbon only with one or more halogens; or wherein the optional substituent on a saturated carbon is a divalent substituent independently selected from the group consisting of =0, =S, =NNR*2, =NNHC(O)R*, =NNHC(O)OR*, =NNHS(O)2R*, =NR*, =NOR*, -O(C(R*2) 2-3 O-, or -S(C(R*2)) 2-3 S-, or a divalent substituent bound to adjacent substitutable carbons of a group that is "optionally substituted" is -O(CR*2) 2-3 O-, wherein each independently occurring R* is selected from the group consisting of hydrogen, C 1-6aliphatic group or an unsubstituted 5-6 membered saturated, partially unsaturated, or aryl ring having 0-4 heteroatoms independently selected from nitrogen, oxygen, or sulfur.

[0082] when R* is C 1-6 aliphatic group, R* is optionally substituted with halogen, -R, -(haloR ), -OH, -OR, -O(haloR ), -CN, -C(O)OH, -C(O)OR, -NH2, -NHR, -NR22, or -NO2, wherein each R is independently selected from C1-4aliphatic, -CH2Ph, -O(CH2)0-1Ph, or 5-6 membered saturated, partially unsaturated, or aryl ring having 0-4 heteroatoms independently selected from nitrogen, oxygen, or sulfur, and wherein each R is unsubstituted or substituted only with halogen(s) if preceded by halo.

[0083] The optional substituents on the nitrogen are independently:

[0084] wherein each is independently hydrogen, C1-6aliphatic, unsubstituted -OPh, or an unsubstituted 5-6 membered saturated, partially unsaturated, or aryl ring having 0-4 heteroatoms independently selected from nitrogen, oxygen, or sulfur, or two separate occurrences of together with their intervening atoms form an unsubstituted 3-12 membered saturated, partially unsaturated, or aryl monocyclic or bicyclic ring having 0-4 heteroatoms independently selected from nitrogen, oxygen, or sulfur; wherein when is C1-6aliphatic, is optionally substituted with halogen, -R, -(haloR ), -OH, -OR, -O(haloR ), -CN, -C(O)OH, -C(O)OR, -NH2, -NHR, -NR22, or -NO2, wherein each R is independently selected from C1-4aliphatic, -CH2Ph, -O(CH2)0-1Ph, or 5-6 membered saturated, partially unsaturated, or aryl ring having 0-4 heteroatoms independently selected from nitrogen, oxygen, or sulfur, and wherein each R is unsubstituted or substituted only with halogen(s) if preceded by halo.

[0085] Unless otherwise indicated, numerical ranges are understood to include each and every value within the range. For example, a range of 1 to 12 is understood to include each and every integer value within the range, e.g., 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, etc. Likewise, a range of 1.1 to 12.5 is understood to include each and every real value within the range, e.g., 1.1, 1.2, 1.3, 1.4, 1.5, 1.6, 1.7, 1.8, 1.9, 2.0, 2.1, 2.2, 2.3, 2.4, 2.5, 2.6, 2.7, 2.8, 2.9, 3.0, 3.1, 3.2, 3.3, 3.4, 3.5, 3.6, 3.7, 3.8, 3.9, 4.0, 4.1, 4.2, 4.3, 4.4, 4.5, 4.6, 4.7, 4.8, 4.9, 5.0, 5.1, 5.2, 5.3, 5.4, 5.5, 5.6, 5.7, 5.8, 5.9, 6.0, 6.1, 6.2, 6.3, 6.4, 6.5, 6.6, 6.7, 6.8, 6.9, 7.0, 7.1, 7.2, 7.3, 7.4, 7.5, 7.6, 7.7, 7.8, 7.9, 8.0, 8.1, 8.2, 8.3, 8.4, 8.5, 8.6, 8.7, 8.8, 8.9, 9.0, 9.1, 9.2, 9.3, 9.4, 9.5, 9.6, 9.7, 9.8, 9.9, 10.0, 10.1, 10.2, 10.3, 10.4, 10.5, 10.6, 10.7, 10.8, 10.9, 11.0, 11.1, 11.2, 11.3, 11.4, 11.5, 11.6, 11.7, 11.8, 11.9, 12.0, 12.1, 12.2, 12.3, 12.4, 12.5, etc. The same applies to ranges having endpoints of different values, e.g., 1 to 12.5.

[0086] The term "C 1-20 alkyl" is understood to mean straight and branched chain alkyl groups having from 1 to 20 carbon atoms, "C 1-12"Alkyl" denotes straight-chained and branched alkyl groups having 1, 2, 3, 4, 5, 6, 7, 8, 8, 9, 10, 11 or 12 carbon atoms, "C1-C12-alkyl", "C1-C9-alkyl", "C1-C6-alkyl", "C1-C4-alkyl", "C1-C2-alkyl", "C1-C3-alkyl", "C1-C5-alkyl", "C1-C7-alkyl", "C1-C8-alkyl". 1-8 "Alkyl" denotes straight-chained and branched alkyl groups having 1, 2, 3, 4, 5, 6, 7, 8, 8, 9, 10, 11 or 12 carbon atoms, "C1-C12-alkyl", "C1-C9-alkyl", "C1-C6-alkyl", "C1-C4-alkyl", "C1-C2-alkyl", "C1-C3-alkyl", "C1-C5-alkyl", "C1-C7-alkyl", "C1-C8-alkyl". 1-6 "Alkyl" denotes straight-chained and branched alkyl groups having 1, 2, 3, 4, 5, 6, 7, 8, 8, 9, 10, 11 or 12 carbon atoms, "C1-C12-alkyl", "C1-C9-alkyl", "C1-C6-alkyl", "C1-C4-alkyl", "C1-C2-alkyl", "C1-C3-alkyl", "C1-C5-alkyl", "C1-C7-alkyl", "C1-C8-alkyl". 1-4 "Alkyl" denotes straight-chained and branched alkyl groups having 1, 2, 3, 4, 5, 6, 7, 8, 8, 9, 10, 11 or 12 carbon atoms, "C1-C12-alkyl", "C1-C9-alkyl", "C1-C6-alkyl", "C1-C4-alkyl", "C1-C2-alkyl", "C1-C3-alkyl", "C1-C5-alkyl", "C1-C7-alkyl", "C1-C8-alkyl".

[0087] The term "C 2-12 "Alkenyl" is to be understood as meaning straight-chain or branched one valent hydrocarbon radicals which contain one or more double bonds and have 2 to 12 carbon atoms. "C2-C12-alkenyl", "C2-C9-alkenyl", "C2-C6-alkenyl", "C2-C4-alkenyl", "C2-C3-alkenyl", "C2-C5-alkenyl", "C2-C7-alkenyl", "C2-C8-alkenyl". 2-6 "Alkenyl" is to be understood as meaning straight-chain or branched one valent hydrocarbon radicals which contain one or more double bonds and have 2 to 12 carbon atoms. "C2-C12-alkenyl", "C2-C9-alkenyl", "C2-C6-alkenyl", "C2-C4-alkenyl", "C2-C3-alkenyl", "C2-C5-alkenyl", "C2-C7-alkenyl", "C2-C8-alkenyl". 2-3 ​In case the alkenyl group contains more than one double bond, it is to be understood that the double bonds can be isolated from or conjugated to each other. The alkenyl group is, for example, ethenyl, allyl, (E)-2-methylethenyl, (Z)-2-methylethenyl, (E)-but-2-enyl, (Z)-but-2-enyl, (E)-but-1 - enyl, (Z)-but-1 -enyl, pent-4-enyl, (E)-pent-3-enyl, (Z)-pent-3-enyl, (E)-pent-2-enyl, (Z)-pent-2-enyl, (E)-pent-1 -enyl, (Z)-pent-1 -enyl, hex-5-enyl, (E)-hex-4-enyl, (Z)-hex-4-enyl, (E)-hex-3-enyl, (Z)-hex-3-enyl, (E)-hex-2-enyl, (Z)-hex-2-enyl, (E)-hex-1 -enyl, (Z)-hex-1 -enyl, isopropenyl, 2-methylprop-2-enyl, 1 -methylprop-2-enyl, 2-methylprop-1 -enyl, (E)-1 -methylprop-1 -enyl, (Z)-1 -methylprop-1 -enyl, 3-methylbut-3-enyl, 2-methylbut-3-enyl, 1 -methylbut-3-enyl, 3-methylbut-2-enyl, (E)-2-methylbut-2-enyl, (Z)-2-methylbut-2-enyl, (E)-1 -methylbut-2-enyl, (Z)-1 -methylbut-2-enyl, (E)-3-methylbut-1 -enyl, (Z)-3-methylbut-1 -enyl, (E)-2-methylbut-1 -enyl, (Z)-2-methylbut-1 -enyl, (E)-1 -methylbut-1 -enyl, (Z)-1 -methylbut-1 -enyl, 1,1 -dimethylprop-2-enyl, 1 -ethylprop-1 -enyl, 1 -propylvinyl or 1 -isopropylvinyl.

[0088] The term "C 2-12"Alkynyl" is understood to mean a straight-chain or branched one valent hydrocarbon radical, which contains one or more triple bonds and has 2 to 12 carbon atoms, optionally "C2-C6-alkynyl". The term "C2-C6-alkynyl" is understood to mean optionally a straight-chain or branched one valent hydrocarbon radical, which contains one or more triple bonds and has 2, 3, 4, 5, 6 carbon atoms, in particular 2 or 3 carbon atoms ("C2-C3-alkynyl"). Said alkynyl group is, for example, ethynyl, prop-1-ynyl, prop-2-ynyl, but-1-ynyl, but-2-ynyl, but-3-ynyl, pent-1-ynyl, pent-2-ynyl, pent-3-ynyl, pent-4-ynyl, hex-1-ynyl, hex-2-ynyl, hex-3-ynyl, hex-4-ynyl, hex-5-ynyl, 1-methylprop-2-ynyl, 2-methylbut-3-ynyl, 1-methylbut-3-ynyl, 1-methylbut-2-ynyl, 3-methylbut-1-ynyl, 1-ethylprop-2-ynyl, 3-methylpent-4-ynyl, 2-methylpent-4-ynyl, 1-methylpent-4-ynyl, 2-methylpent-3-ynyl, 1-methylpent-3-ynyl, 4-methylpent-2-ynyl, 1-methylpent-2-ynyl, 4-methylpent-1-ynyl, 3-methylpent-1-ynyl, 2-ethylbut-3-ynyl, 1-ethylbut-3-ynyl, 1-ethylbut-2-ynyl, 1-propylprop-2-ynyl, 1-isopropylprop-2-ynyl, 2,2-dimethylbut-3-ynyl, 1,1-dimethylbut-3-ynyl, 1,1-dimethylbut-2-ynyl or 3,3-dimethylbut-1-ynyl. In particular, said alkynyl group is ethynyl, prop-1-ynyl or prop-2-ynyl.

[0089] The term "heteroalkyl", by itself or in combination with another term, means a stable straight-chain or branched-chain alkyl radical consisting of the stated number of carbon atoms and at least one heteroatom or heteroatom group. In some embodiments, the heteroatom is selected from B, O, N, and S, wherein the nitrogen and sulfur atoms are optionally oxidized, and the nitrogen heteroatom is optionally quaternized. In other embodiments, the heteroatom group is selected from -C(=O)O-, -C(=O)-, -C(=S)-, -S(=O), -S(=O)2-, -C(=O)N(H)-, -N(H)-, -C(=NH)-, -S(=O)2N(H)-, and -S(=O)N(H)-. In some embodiments, the heteroalkyl is C 1-6 heteroalkyl; in other embodiments, the heteroalkyl is C 1-3Heteroalkyl. The heteroatom or heteroatom group can be located at any internal position of the heteroalkyl group, including the position at which the alkyl group is attached to the rest of the molecule, although the terms "alkoxy," "alkylamino," and "alkylthio" (or thioalkoxy) are meant to refer only to those alkyl groups attached to the remainder of the molecule through an oxygen, amino, or sulfur atom, respectively. Examples of heteroalkyl include, but are not limited to, -OCH3, -OCH2CH3, -OCH2CH2CH3, -OCH2(CH3)2, -CH2-CH2-O-CH3, -NHCH3, -N(CH3)2, -NHCH2CH3, -N(CH3)(CH2CH3), -CH2-CH2-NH-CH3, -CH2-CH2-N(CH3)-CH3, -SCH3, -SCH2CH3, -SCH2CH2CH3, -SCH2(CH3)2, -CH2-SCH2-CH3, -CH2-CH2, -S(=O)-CH3, -CH2-CH2-S(=O)2-CH3. Up to two heteroatoms can be consecutive, such as, for example, -CH2-NH-OCH3.

[0090] The term "heteroalkenyl," by itself or in combination with another term, means, unless otherwise indicated, a stable straight or branched chain hydrocarbon radical, or combination thereof, consisting of at least one carbon atom and at least one heteroatom, which contains at least one double bond and which can be substituted as set forth herein.

[0091] The term "heteroalkynyl," by itself or in combination with another term, means, unless otherwise indicated, a stable straight or branched chain hydrocarbon radical, or combination thereof, consisting of at least one carbon atom and at least one heteroatom, which contains at least one triple bond and which can be substituted as set forth herein.

[0092] The term "aryl" means a cyclic aromatic hydrocarbon radical having 1 to 3 aromatic rings (including monocyclic or bicyclic or tricyclic radicals), such as phenyl, biphenyl, or naphthyl. When containing two aromatic rings (bicyclic, etc.), the aromatic rings of the aryl radical are optionally connected at a single point (e.g., biphenyl) or fused (e.g., naphthyl). The term "C 6-14 aryl" is understood to mean a monovalent aromatic monocyclic, bicyclic, or tricyclic hydrocarbon ring ("C 6-14 aryl") having 6, 7, 8, 9, 10, 11, 12, 13, or 14 carbon atoms, optionally "C 6-12 aryl", in particular a ring having 6 carbon atoms ("C6aryl"), such as phenyl; or a bicyclic ring having 10 carbon atoms ("C 10 aryl"), such as naphthyl; or a tricyclic ring having 13 carbon atoms ("C 13 aryl"), such as fluorenyl; or a tricyclic ring having 14 carbon atoms ("C 14 aryl"), such as anthracenyl.

[0093] Additional aspects and advantages of the present disclosure will be in part apparent and in part expressly stated in the description that follows, and by the practice of the present disclosure. BRIEF DESCRIPTION OF DRAWINGS

[0094] The above and / or additional aspects and advantages of the present disclosure will become apparent and be readily appreciated from the description of the embodiments, taken in conjunction with the following drawings:

[0095] FIG. 1 is a schematic diagram of polytellurides and their application in photolithography according to the present disclosure;

[0096] FIG. 2 is a scanning electron microscope image of EUV lithographic patterns of poly(n-butyl telluride) according to Example 1 of the present disclosure, with (a) low dose and (b) high dose;

[0097] FIG. 3 is a scanning electron microscope image of EUV lithographic patterns of poly(n-propyl telluride) according to Example 2 of the present disclosure, with (a) low dose and (b) high dose;

[0098] FIG. 4 is a scanning electron microscope image of EUV lithographic patterns of poly(ethyl telluride) according to Example 3 of the present disclosure, with (a) low dose and (b) high dose;

[0099] FIG. 5 is a scanning electron microscope image of EUV lithographic patterns of poly(phenyl n-butyl telluride) according to Example 4 of the present disclosure, with (a) low dose and (b) high dose;

[0100] FIG. 6 is a scanning electron microscope image of EUV lithographic patterns of poly(phenyl n-propyl telluride) according to Example 5 of the present disclosure, with (a) low dose and (b) high dose;

[0101] FIG. 7 is a scanning electron microscope image of EUV lithographic patterns of poly(phenyl ethyl telluride) according to Example 6 of the present disclosure, with (a) low dose and (b) high dose;

[0102] FIG. 8 is (a) optical microscope image and (b) atomic force microscope image of UV lithographic (I-line) patterns of poly(phenyl n-butyl telluride) according to Example 7 of the present disclosure;

[0103] FIG. 9 is (a) scanning electron microscope image and (b) cross-sectional scanning electron microscope image of e-beam lithographic patterns of poly(phenyl n-butyl telluride) according to Example 8 of the present disclosure.

[0104] DETAILED DESCRIPTION

[0105] Embodiments of the present disclosure are described in detail below with reference to the attached drawing figures, which are incorporated by reference herein in their entirety. The embodiments described below are exemplary in nature, intended to explain the present disclosure and not to limit the same. In addition, unless specifically stated otherwise, all agents employed in the following embodiments are commercially available or can be synthesized according to the methods described herein or known in the art, and the reaction conditions not listed are also readily available to one skilled in the art.

[0106] Example 1: EUV lithography patterning of poly(n-butyl telluroxane)

[0107] (1) n-Butyl telluroether (200 mg, 0.827 mmol) was dissolved in 1 mL of dichloromethane to obtain component A, and 0.5 mL of 30% hydrogen peroxide aqueous solution was diluted to obtain component B. Component A and component B were mixed in a reaction bottle, and a large amount of heat was released, and the organic phase changed from yellow to colorless. The reaction continued for 2 days. After the reaction was completed, the organic phase was separated, and was added dropwise into 40 mL of methanol to produce a white precipitate. The product was washed with 10 mL of methanol and dried in a 60°C oven to obtain poly(n-butyl telluroxane) white solid, the structure of which is as follows:

[0108] wherein n is 150.

[0109] (2) A 1 cm*1 cm*625 μm silicon wafer was immersed in acetone and ultrasonically cleaned for 10 minutes. After cleaning, it was dried with nitrogen and placed in a 110°C oven for 10 minutes. After drying, it was cooled to room temperature for use. 6 mg of poly(n-butyl telluroxane) was dissolved in 1 mL of chloroform, and a poly(n-butyl telluroxane) film was obtained using a spin coating method. The spin coating speed was 2000-3000 rpm, and the time was 40 seconds. The solvent was removed by drying at 80°C for 1 minute to obtain a poly(n-butyl telluroxane) film with a thickness of 20-30 nm.

[0110] (3) The silicon wafer was exposed to EUV light, and the exposure dose was 1-100 mJ / cm 2 . After exposure, development was performed in a methanol / water mixed solvent, and the volume ratio of the developer methanol / water was 1:(0-0.3), and the development time was 45-120 seconds. After development, the corresponding pattern was obtained.

[0111] Example 2: EUV lithography patterning of poly(n-propyl telluroxane)

[0112] The difference from Example 1 is that the polytelluroxane has the following structure:

[0113] wherein n is 150.

[0114] Example 3: EUV lithography patterning of poly(ethyl telluroxane)

[0115] The difference from Example 1 is that the polytellurouxe has the following structure:

[0116] where n is 150.

[0117] Example 4: EUV lithographic patterning of polyphenyl-n-butyltellurouxe

[0118] The difference from Example 1 is that the polytellurouxe has the following structure:

[0119] where n is 50.

[0120] Example 5: EUV lithographic patterning of polyphenyl-n-propyltellurouxe

[0121] The difference from Example 1 is that the polytellurouxe has the following structure:

[0122] where n is 50.

[0123] Example 6: EUV lithographic patterning of polyphenyl-ethyltellurouxe

[0124] The difference from Example 1 is that the polytellurouxe has the following structure:

[0125] where n is 50.

[0126] Example 7: UV lithographic (I-line) patterning of polyphenyl-n-butyltellurouxe

[0127] (1) Phenyl-n-propyl telluride (200 mg, 0.827 mmol) was dissolved in 1 mL of dichloromethane to give component A, and 0.5 mL of 30% aqueous hydrogen peroxide solution was diluted to give component B. Component A and component B were mixed well in a reaction bottle, and a large amount of heat was released, and the organic phase changed from yellow to colorless, and the reaction continued for 2 days. After the reaction was completed, the organic phase was separated, and was added dropwise into 40 mL of methanol to produce a white precipitate. The product was washed with 10 mL of methanol, and was dried in a 60 °C oven to give polyphenyl-n-propyl tellurouxe white solid, which has the following structure:

[0128] where n is 50.

[0129] (2) 1 cm * 1 cm * 625 μm silicon wafer was immersed in acetone and cleaned by ultrasonic for 10 minutes. After cleaning, the wafer was dried by nitrogen and placed in a 110 °C oven for 10 minutes. After drying, the wafer was cooled to room temperature and used. 30 mg of polyphenyl n-propyl telluroxane was dissolved in 1 mL of chloroform. The polyphenyl n-propyl telluroxane film was obtained by spin coating. The spin speed was 2000-3000 rpm and the time was 40 seconds. The film was dried at 80 °C for 1 minute to remove the solvent. The thickness of the polyphenyl n-propyl telluroxane film was 80-100 nm.

[0130] (3) The silicon wafer was exposed to UV light (I-line) with an exposure dose of 100-1000 mJ / cm 2 . After exposure, the wafer was developed in a methanol / water mixture with a volume ratio of methanol / water of 1 : (0-0.3) for 45-120 seconds. The corresponding pattern was obtained after development.

[0131] Example 8: Electron beam lithography patterning of polyphenyl n-butyl telluroxane

[0132] (1) Phenyl n-propyl telluroether (200 mg, 0.827 mmol) was dissolved in 1 mL of dichloromethane to obtain component A. 0.5 mL of 30% hydrogen peroxide aqueous solution was diluted to obtain component B. Component A and component B were mixed in a reaction bottle. A large amount of heat was released during the reaction. The organic phase changed from yellow to colorless. The reaction continued for 2 days. After the reaction was completed, the organic phase was separated and added dropwise into 40 mL of methanol to produce a white precipitate. The product was washed with 10 mL of methanol and dried in a 60 °C oven to obtain polyphenyl n-propyl telluroxane white solid. The structure is as follows:

[0133] wherein n is 50.

[0134] (2) 1 cm * 1 cm * 625 μm silicon wafer was immersed in acetone and cleaned by ultrasonic for 10 minutes. After cleaning, the wafer was dried by nitrogen and placed in a 110 °C oven for 10 minutes. After drying, the wafer was cooled to room temperature and used. 30 mg of polyphenyl n-propyl telluroxane was dissolved in 1 mL of chloroform. The polyphenyl n-propyl telluroxane film was obtained by spin coating. The spin speed was 2000-3000 rpm and the time was 40 seconds. The film was dried at 80 °C for 1 minute to remove the solvent. The thickness of the polyphenyl n-propyl telluroxane film was 80-100 nm.

[0135] (3) The silicon wafer was exposed to UV light (I-line) with an exposure dose of 100-1000 mJ / cm 2 . After exposure, the wafer was developed in a methanol / water mixture with a volume ratio of methanol / water of 1 : (0-0.3) for 45-120 seconds. The corresponding pattern was obtained after development.

[0136] The EUV lithography pattern sensitivity and resolution of polytellurides were analyzed:

[0137] The sensitivity of the photoresist can be described by the exposure dose, the lower the exposure dose, the higher the sensitivity; the resolution of the photoresist can be described by the minimum line width, the smaller the minimum line width, the higher the resolution. The exposure dose and minimum line width of the EUV lithography pattern of Examples 1-6 are listed as follows, see Table 1 below.

[0138] Table 1

[0139] From the above analysis, it can be seen that the EUV exposure dose of the polytelluride-based non-chemically amplified photoresist of the present disclosure is between 7.58-32.6 mJ / cm 2 , and the minimum line width is between 16-30 nm. It can be further found that the minimum exposure dose of the polytelluride-based non-chemically amplified photoresist of the present disclosure is only 7.58 mJ / cm 2 , which has higher sensitivity than the commercial non-chemically amplified photoresist PMMA (about 20 mJ / cm 2 ). At the same time, the minimum line width of the polytelluride-based non-chemically amplified photoresist of the present disclosure can reach 16 nm, which has reached the performance of commercial photoresist, especially Examples 2 and 5, which achieve high sensitivity and high resolution at the same time. At the same time, it can be observed that the line pattern has lower line edge roughness.

[0140] The UV lithography pattern of polytelluride was characterized by optical microscope and atomic force microscope:

[0141] The UV lithography (I-line) pattern results of Example 7 were characterized by optical microscope and atomic force microscope, and the related results are shown in Figure 8a (UV lithography (I-line) optical microscope image of polyphenyl n-butyl telluride) and Figure 8b (UV lithography (I-line) atomic force microscope image of polyphenyl n-butyl telluride). The results show that polytelluride has UV lithography feasibility and good UV lithography performance.

[0142] The electron beam lithography pattern of polytelluride was characterized by scanning electron microscope:

[0143] The electron beam lithography pattern results of Example 8 were characterized by scanning electron microscope, and the related results are shown in Figure 9a (scanning electron microscope image of electron beam lithography of polyphenyl n-butyl telluride) and Figure 9b (cross-sectional scanning electron microscope image of electron beam lithography of polyphenyl n-butyl telluride). The results show that polytelluride has electron beam lithography feasibility and good electron beam lithography performance.

[0144] In the description of the specification, the description of the terms "one embodiment", "some embodiments", "an example", "a specific example", or "some examples" etc. means that the specific features, structures, materials or characteristics described in connection with the embodiment or example are included in at least one embodiment or example of the present disclosure. In the specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Also, the specific features, structures, materials or characteristics described can be combined in any appropriate manner in any one or more embodiments or examples. In addition, the person skilled in the art can combine and combine the different embodiments or examples described in the specification and the features of the different embodiments or examples without contradiction.

[0145] Although the embodiments of the present disclosure have been shown and described above, it is understood that the above-described embodiments are exemplary and are not to be construed as limiting the present disclosure, and those skilled in the art can make changes, modifications, replacements and variations to the above-described embodiments within the scope of the present disclosure.

Claims

1. Use of polytelluroxane in a non-chemically amplified photoresist, characterized in that, The polytellurouxe has a Te-O chain.

2. Use according to claim 1, characterized in that, The polytellurou ethane is a polymer consisting of monomers of the structure shown in formula (V), wherein R1, R2are each independently selected from hydrogen, hydroxyl, amino, thiol, optionally substituted C1-C 20 alkyl, optionally substituted C2-C 20 alkenyl, optionally substituted C2-C 20 alkynyl, optionally substituted C1-C 20 heteroalkyl, optionally substituted C2-C 20 heteroalkenyl, optionally substituted C2-C 20 heteroalkynyl, optionally substituted aryl, or having the structure of Formula (II), R3 is selected from hydroxyl, amino, cyano, optionally substituted aryl, and x is any integer between 1-20; or R1 and R2 are connected together to form a monomer having a structure shown in general formula (VI), R4 is selected from optionally substituted C1-C8 alkyl, optionally substituted C2-C8 alkenyl, optionally substituted C2-C8 alkynyl, optionally substituted C1-C8 heteroalkyl, optionally substituted C2-C8 heteroalkenyl, optionally substituted C2-C8 heteroalkynyl.

3. Use according to claim 2, characterized in that, The polytellurouxe has a structure shown in general formula (I): n is any integer between 2-5000.

4. Use according to claim 2, characterized in that, The polytellurouxe has a structure shown in general formula (III): n is any integer between 2-5000.

5. Use according to claim 2, characterized in that, The polytellurouxe has a structure shown in general formula (IV): wherein R1', R1" are independently selected from R1, R2', R2" are independently selected from R2, and m, p are independently any integer between 1-5000.

6. Use according to any one of claims 1 to 5, characterized in that, R1, R2are each independently selected from the group consisting of optionally substituted C1-C 12 alkyl, optionally substituted C2-C 12 alkenyl, optionally substituted C2-C 12 alkynyl or optionally substituted aryl; Optionally, R1, R2are each independently selected from the group consisting of optionally substituted C1-C4alkyl, optionally substituted C2-C4alkenyl, optionally substituted C2-C4alkynyl, Optionally, R1, R2 are independently selected from optionally substituted C1-C4 alkyl, optionally substituted C2-C4 alkenyl, optionally substituted C2-C4 alkynyl; Optionally, R1 is phenyl, and R2 is C1-C4 alkyl, C2-C4 alkenyl, or C2-C4 alkynyl.

7. The use according to any one of claims 1 to 6, characterized in that, The polytellurou ethane is n is 150; Optionally, the polytellurou ethane is n is 150; Optionally, the polytellurou ethane is n is 150; Optionally, the polytellurou ethane is n is 50; Optionally, the polytellurou ethane is n is 50; Optionally, the polytellurou ethane is n is 50.

8. Use according to any one of claims 1 to 7, characterized in that, The application is achieved by: After cleaning the substrate, a solution of polytellurouxe is coated on the substrate, baked to remove solvent, and then UV lithography, electron beam lithography or EUV lithography is performed on the substrate, followed by development using a developer to obtain a corresponding pattern.

9. Use according to claim 8, characterized in that, The material of the substrate is germanium, silicon, silicon carbide, silicon nitride, gallium arsenide or gallium nitride; Optionally, the cleaning of the substrate is performed by using acetone and ultrasonic cleaning of the substrate; Optionally, the solvent of the solution of polytellurouxe is one or more mixed solvents selected from ethyl acetate, dichloromethane, chloroform, tetrahydrofuran, 2-hexanone, dimethylformamide and anisole; Optionally, the concentration of the solution of polytellurouxe is 1-50 mg / mL; Preferably, the concentration of the solution of polytellurouxe is 6-20 mg / mL.

10. Use according to claim 8, characterized in that, The coating of the solution of polytellurouxe on the substrate is performed by using a spin coating method, and a spin coater is used to coat the solution of polytellurouxe on the substrate; Optionally, the spin coating method uses a rotation speed of 2000-5000 rpm for 20-60 s; Optionally, the baking temperature is 60-120°C for 1-10 minutes; Optionally, the UV lithography dose is 1-1000 mJ / cm 2 ; Optionally, the e-beam lithography dose is 1-500 μC / cm 2 ; Optionally, the EUV lithography dose is 1-100 mJ / cm 2 ; Optionally, the developer is one or more mixed solvents selected from isopropyl alcohol, ethanol, methanol and water.

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