Process chamber and semiconductor process device

Abstract

The present application provides a process chamber and a semiconductor process device. The process chamber comprises: a chamber body, wherein the top of the chamber body has a gas inlet hole, and the gas inlet hole is used for conveying a process gas to the interior of the chamber body; a first turntable rotatably arranged in the chamber body around a first axis and located below the gas inlet hole, wherein the axial direction of the gas inlet hole is parallel to the first axis; and a second turntable used for carrying a wafer, wherein the second turntable is rotatably arranged on the first turntable around a second axis. By providing the gas inlet hole at the top of the chamber body in the direction of the first axis, the process chamber of the present application can ensure that when the process gas reaches the first turntable, the diffusion conditions on the inner side and the outer side of the first turntable are consistent. Therefore, the degrees of diffusion uniformity are also consistent, and the consistency of the wafer is ensured.

Description

Process chamber and semiconductor process equipment TECHNICAL FIELD

[0001] The present application relates to the field of semiconductor manufacturing, in particular to a process chamber and semiconductor process equipment. BACKGROUND

[0002] At present, in the field of semiconductors, the method of chemical vapor deposition (CVD) is mainly used for epitaxial layer growth of substrates, which mainly uses a reaction source to generate atoms through a cracking reaction at high temperature (above 650 degrees Celsius), and then recombine on the wafer surface to generate a thin film.

[0003] The existing epitaxial equipment chamber can be divided into single-cavity single-wafer type and single-cavity multi-wafer type. The single-cavity single-wafer type generally performs single-wafer epitaxy of medium and large size silicon carbide wafers such as 6 inches or 8 inches; and the single-cavity multi-wafer type generally performs multi-wafer epitaxy of medium and small size silicon carbide wafers of 6 inches or less.

[0004] For single-cavity multi-wafer epitaxial equipment, a plurality of small plates are arranged on a large plate, and wafers are arranged on the small plates. The epitaxial equipment transports process gas to the inside of the process cavity through a gas inlet structure to react with the wafers on the small plates. However, the gas inlet structure in the prior art is unreasonable and cannot guarantee the consistency of the uniformity of the diffusion of the process gas when it reaches the inside and outside of the large plate. SUMMARY

[0005] The present application aims to at least solve the problem that the gas inlet structure in the prior art is unreasonable and cannot guarantee the consistency of the uniformity of the diffusion of the process gas when it reaches the inside and outside of the large plate, and proposes a process chamber and semiconductor process equipment.

[0006] To achieve the purpose of the present application, a process chamber is provided, which comprises: a chamber body having a gas inlet hole at the top for transporting process gas into the inside of the chamber body; a first turntable rotatably arranged in the chamber body about a first axis and located below the gas inlet hole, the axis direction of the gas inlet hole being parallel to the first axis; and a second turntable for carrying wafers, the second turntable being rotatably arranged on the first turntable about a second axis.

[0007] In some embodiments, the gas inlet hole is in multiple groups, each group of the gas inlet hole is multiple and is distributed at intervals around the first axis, different groups of the gas inlet hole are distributed at intervals in the radial direction of the first turntable, and the gas inlet holes of adjacent two groups are staggered in the circumferential direction.

[0008] In some embodiments, further comprising:

[0009] an exhaust pipe having an exhaust hole in communication with the chamber body interior; a first end of the exhaust pipe extending to the first rotary disc position, a second end of the exhaust pipe being located outside the chamber body;

[0010] The exhaust hole is a plurality of exhaust holes, and the plurality of exhaust holes are circumferentially spaced apart on the outer peripheral wall of the exhaust pipe close to the first end thereof.

[0011] In some embodiments, a particle collection structure is arranged inside the exhaust pipe, and the particle collection structure is located between the exhaust hole and the second end of the exhaust pipe.

[0012] In some embodiments, the particle collection structure is annular, and the particle collection structure is connected to the inner peripheral wall of the exhaust pipe, and a top portion of the particle collection structure in the vertical direction forms a collection groove with the inner peripheral wall of the exhaust pipe for collecting particles.

[0013] In some embodiments, the exhaust pipe comprises a first exhaust pipe penetrating the top portion of the chamber body, a first end of the first exhaust pipe extending to the top portion of the first rotary disc, and the first exhaust pipe being used for exhausting the process gas above the first rotary disc.

[0014] In some embodiments, the exhaust pipe further comprises a second exhaust pipe penetrating the bottom portion of the chamber body, a first end of the second exhaust pipe being drivingly connected to the first rotary disc, and a second end of the second exhaust pipe being used for being connected to a driving source, and the second exhaust pipe being used for exhausting the process gas below the first rotary disc and driving the first rotary disc to rotate around the first axis.

[0015] In some embodiments, the first rotary disc is provided with a communication hole penetrating from the top portion to the bottom portion of the first rotary disc; the first end of the first exhaust pipe is in sealing engagement with the top portion of the first rotary disc, and the interior of the first exhaust pipe is in communication with the communication hole; and the first end of the second exhaust pipe is in sealing engagement with the bottom portion of the first rotary disc, and the interior of the second exhaust pipe is in communication with the communication hole.

[0016] In some embodiments, the process chamber further comprises a dust collection ring sleeved on the outer peripheral wall of the first rotary disc, and the first rotary disc and the dust collection ring divide the chamber body interior into an upper cavity and a lower cavity; the dust collection ring interior has a dust collection space in communication with the upper cavity and the lower cavity, so as to collect particles in the process gas flowing through the dust collection space.

[0017] In some embodiments, the dust collecting ring top is provided with an air inlet hole, the dust collecting space communicates with the upper cavity through the air inlet hole; the inner circumferential wall of the dust collecting ring is provided with an air outlet hole, the dust collecting space communicates with the lower cavity through the air outlet hole; the inner wall of the dust collecting space is provided with a dust collecting groove, the dust collecting groove is arranged below the air inlet hole, and the air outlet hole is located between the dust collecting groove and the air inlet hole in the vertical direction.

[0018] In some embodiments, the air inlet hole and the air outlet hole are both multiple and are spaced apart around the circumference of the first rotating disc, the sum of the flow areas of all the air inlet holes is less than the sum of the flow areas of all the air outlet holes.

[0019] In some embodiments, the first exhaust pipe is rotatably arranged at the top of the chamber body and sealingly fitted, the first end of the first exhaust pipe is drivingly connected with the second rotating disc, and the second end of the first exhaust pipe is used to be drivingly connected with a driving source to drive the second rotating disc to rotate around the second axis.

[0020] In some embodiments, the second rotating disc is multiple, and multiple second rotating discs are arranged around the first exhaust pipe, all the second rotating discs are drivingly connected with the first exhaust pipe to enable the first exhaust pipe to drive all the second rotating discs to synchronously rotate around the respective second axis, wherein the second axis is parallel to the first axis.

[0021] In some embodiments, the first exhaust pipe is provided with a first driving member, the second rotating disc is provided with a second driving member matched with the first driving member, and the first driving member and the second driving member are drivingly fitted to enable the first exhaust pipe to drive the second rotating disc to rotate around the second rotating disc.

[0022] In some embodiments, the first driving member is a first gear arranged on the outer circumferential wall of the first exhaust pipe, the second driving member is a second gear arranged at the bottom of the first rotating disc, and the first gear is engaged with the second gear.

[0023] In some embodiments, the process chamber further comprises a shield plate arranged above the first rotating disc and synchronously rotating with the first rotating disc, a containing space is formed between the bottom of the shield plate and the top of the first rotating disc, and the first driving member and the second driving member are located in the containing space.

[0024] In some embodiments, the shield plate is provided with a third avoiding hole and a fourth avoiding hole, the second rotating disc is located in the third avoiding hole and is fitted with a gap in the third avoiding hole, and the first exhaust pipe is arranged in the fourth avoiding hole and is fitted with a gap in the fourth avoiding hole.

[0025] In some embodiments, the shield plate comprises: an inner sub-plate connected with the first rotary disc and located between the second rotary disc and the first exhaust pipe, the fourth avoiding hole and a first avoiding slot are arranged on the inner sub-plate; an outer sub-plate detachably connected with the first rotary disc, the outer sub-plate is located on a side of the second rotary disc away from the first exhaust pipe, a second avoiding slot is arranged on the outer sub-plate, and the first avoiding slot and the second avoiding slot enclose the third avoiding hole.

[0026] In some embodiments, the process chamber further comprises: a lifting mechanism arranged below the first rotary disc, the lifting mechanism has a plurality of lifting rods, and all the lifting rods support the wafer by elongation; a plurality of first avoiding holes are arranged on the first rotary disc, the first avoiding holes are arranged one by one corresponding to the lifting rods; a plurality of second avoiding holes are arranged on the second rotary disc, and the second rotary disc is rotated relative to the first rotary disc to correspond the first avoiding holes to the second avoiding holes one by one, so that the elongated lifting rods pass through the first avoiding holes and the second avoiding holes and support the wafer.

[0027] According to a second aspect of the present application, a semiconductor process equipment is also disclosed, which comprises a heating device and the above process chamber.

[0028] The process chamber of the present application can ensure that the diffusion of process gas is consistent on the inner side and the outer side of the first rotary disc when the process gas reaches the first rotary disc by arranging the gas inlet hole on the top of the chamber body along the first axis direction, so that the uniformity of diffusion is consistent, and the consistency of the wafer is ensured. BRIEF DESCRIPTION OF DRAWINGS

[0029] FIG. 1 is a structural schematic diagram of a large disc and a small disc in the related art;

[0030] FIG. 2 is a matching schematic diagram of a large disc and a small disc in the related art;

[0031] FIG. 3 is a structural schematic diagram of a process chamber according to an embodiment of the present application;

[0032] FIG. 4 is a structural schematic diagram of a hole plate of a process chamber according to an embodiment of the present application;

[0033] FIG. 5 is a sectional view of a gas inlet flange of a process chamber according to an embodiment of the present application;

[0034] FIG. 6 is a schematic diagram of a sealing matching of a first exhaust pipe and a gas inlet assembly of a process chamber according to an embodiment of the present application;

[0035] FIG. 7 is an assembly diagram of a first rotary disc and a second exhaust pipe of a process chamber according to an embodiment of the present application;

[0036] FIG. 8 is a structural schematic diagram of a second exhaust pipe of the process chamber according to an embodiment of the present application;

[0037] FIG. 9 is a structural schematic diagram of a dust collecting ring of the process chamber according to an embodiment of the present application;

[0038] FIG. 10 is a structural schematic diagram of a first rotating disc of the process chamber according to an embodiment of the present application;

[0039] FIG. 11 is a side sectional view of the inside of the dust collecting ring of the process chamber according to an embodiment of the present application;

[0040] FIG. 12 is a schematic diagram of the cooperation between a first driving member and a second driving member of the process chamber according to an embodiment of the present application;

[0041] FIG. 13 is an assembly schematic diagram of the second driving member of the process chamber according to an embodiment of the present application;

[0042] FIG. 14 is a structural schematic diagram of the second driving member of the process chamber according to an embodiment of the present application;

[0043] FIG. 15 is a structural schematic diagram of a second rotating disc of the process chamber according to an embodiment of the present application;

[0044] FIG. 16 is a structural schematic diagram of a lifting mechanism of the process chamber according to an embodiment of the present application;

[0045] FIG. 17 is a schematic diagram of the extended state of the lifting mechanism of the process chamber according to an embodiment of the present application;

[0046] FIG. 18 is a structural schematic diagram of a guard plate of the process chamber according to an embodiment of the present application;

[0047] FIG. 19 is a structural schematic diagram of an inner sub-plate of the process chamber according to an embodiment of the present application.

[0048] List of reference signs: 10, chamber body; 11, chamber sidewall; 111, wafer transfer port; 12, gas inlet assembly; 121, gas inlet flange; 1211, second mounting hole; 1212, annular groove; 1213, gas inlet interface; 122, orifice plate; 1221, first mounting hole; 1222, gas inlet hole; 13, chamber base; 14, sealing ring; 15, annular partition; 16, upper cavity; 17, lower cavity; 20, first rotary disc; 21, circular groove; 22, first avoiding hole; 23, communication hole; 30, second rotary disc; 30a, second driving member; 31, rectangular groove; 32, second avoiding hole; 40, first exhaust pipe; 40a, first driving member; 41, first exhaust passage; 42, first exhaust hole; 50, lifting mechanism; 51, bracket; 52, lifting rod; 60, guard plate; 61, third avoiding hole; 62, fourth avoiding hole; 63, inner sub-plate; 631, first avoiding groove; 64, outer sub-plate; 641, second avoiding groove; 70, particle collection structure; 71, first collection groove; 72, second collection groove; 80, second exhaust pipe; 80a, limiting plate; 80b, limiting groove; 81, second exhaust passage; 82, second exhaust hole; 90, dust collecting ring; 90a, dust collecting space; 91, annular top plate; 911, gas inlet through hole; 92, annular bottom plate; 921, dust collecting groove; 93, annular inner plate; 931, gas outlet through hole; 94, first limiting portion; 100, wafer; A1, first axis; A2, second axis. DETAILED DESCRIPTION

[0049] In order for those skilled in the art to better understand the technical solutions of the present application, the process chamber and semiconductor process equipment provided by the present application are described in detail below in combination with the drawings.

[0050] At present, in the field of semiconductors, the method of chemical vapor deposition (CVD) is mainly used for epitaxial layer growth of substrates, which mainly uses a reaction source to generate atoms through cracking reaction at high temperature (above 650 degrees Celsius), and then recombine on the wafer surface to generate a thin film.

[0051] The existing epitaxial equipment chamber can be divided into single-chamber single-wafer type and single-chamber multi-wafer type. The single-chamber single-wafer type generally performs single-wafer epitaxy of medium and large size silicon carbide wafers such as 6 inches or 8 inches; and the single-chamber multi-wafer type generally performs multi-wafer epitaxy of medium and small size silicon carbide wafers of 6 inches or less.

[0052] A single-chamber multi-piece epitaxial equipment is taken as an example, the chemical vapor deposition equipment in the related art shown in FIG. 1 and FIG. 2 comprises a center driving shaft 1, a large disc 2, a small disc 3, a center gas inlet mechanism 4 and an exhaust mechanism 5. The large disc 2 is provided with a plurality of small discs 3, and the plurality of small discs 3 are distributed along the circumferential direction of the large disc 2, and a wafer is arranged on the small disc 3. The center gas inlet mechanism 4 is arranged at the center of the large disc 2 and blows out process gas to the outer circumferential side of the large disc 2 along the radial direction.

[0053] As shown in FIG. 2, the center driving shaft 1 is connected to the bottom of the large disc 2 to drive the large disc 2 to rotate. The large disc 2 is provided with a plurality of accommodating grooves 6, and each small disc 3 is arranged in the accommodating groove 6. The center driving shaft 1 and the large disc 2 are internally provided with an air channel 7, and the air channel 7 is communicated with an air inlet hole 8 at the bottom of the accommodating groove 6. By arranging the air inlet hole 8 at the bottom of the accommodating groove 6, the bottom of the small disc 3 can be blown by air, so that the small disc 3 is suspended and rotated under the action of the air flow. The exhaust mechanism 5 is arranged at the outer circumferential side of the large disc 2, and the large disc 2 is rotatable relative to the exhaust mechanism 5, and the process gas is exhausted to the outside through the exhaust mechanism 5.

[0054] In use, while the center driving shaft 1 drives the large disc 2 to rotate, the small disc 3 also rotates in the air floating mode, so as to realize the uniform contact of the wafer with the process gas. However, this mode in the related art has many defects:

[0055] Firstly, since the center gas inlet mechanism 4 is adopted, the process gas flows from the center of the large disc 2 to the outer circumferential side of the large disc 2 along the radial direction, and in the process that the process gas flows along the radial direction of the large disc 2 to the edge of the large disc 2, the air flow will diffuse along the tangent direction of the large disc 2, and such diffusion has uncertainty and uncontrollability, which leads to the worse uniformity of the process gas as closer to the outer side of the large disc 2, especially the uniformity of the air flow field at the edge of the large disc 2 is worse than that at the center of the large disc 2, thereby affecting the wafer quality.

[0056] Secondly, the exhaust of the related art relies on the exhaust mechanism 5 arranged at the outer circumferential side of the large disc 2, and the exhaust mechanism 5 is fixed on the cavity wall of the reaction chamber and is not fixed with the large disc 2, and the large disc 2 rotates relative to the exhaust mechanism 5. A plurality of exhaust ports are uniformly distributed on the exhaust mechanism 5, and the process gas is sprayed out from the center gas inlet mechanism 4, flows along the radial direction of the large disc 2 to the exhaust mechanism 5, and is exhausted from the exhaust port. Since the concentration of the reaction source in the process gas is high at the center of the large disc 2, particles are easily generated, and the particles fall on the wafer surface along the air flow to generate defects. At the same time, the large disc 2 and the exhaust mechanism 5 rotate relative to each other, and the air flow field near the edge of the large disc 2 and the exhaust port is affected by the relative rotation, and the uniformity is reduced.

[0057] Third, due to the use of air floating rotation, the relative action of the small disc 3 during suspension and rotation with the air flow is relatively complex, and there are many influencing factors. Therefore, the rotation number and speed of the small disc 3 cannot be adjusted by simply controlling the size of the air flow, which leads to poor controllability and stability of the small disc 3, thereby leading to poor wafer quality consistency.

[0058] Fourth, due to the use of air floating rotation, power is generated by the interaction of the air flow with the bottom surface of the small disc 3. Therefore, if a through hole is provided on the small disc 3, not only will the acting area of the air flow on the bottom of the small disc 3 be reduced, affecting the suspension and rotation of the small disc 3, but the air flow blowing through the through hole will also affect the wafer. Therefore, it is impossible to use a lifting mechanism to lift the wafer through the through hole. Moreover, due to the poor controllability and stability of the small disc 3, even if the influence of the through hole is overcome, it is difficult to make the through hole correspond to the telescopic rod of the lifting mechanism, and the lifting cannot be realized. In addition, during transportation, the particles generated by the mutual friction between the mechanical hand and the small disc 3 can easily affect the wafer quality.

[0059] In order to solve the above problems, a process chamber for semiconductor process equipment, such as a chemical vapor deposition device, is disclosed.

[0060] As shown in FIG. 3, the process chamber includes a chamber body 10, a first rotating disc 20 and a second rotating disc 30. The chamber body 10 has an air inlet hole 1222 at the top for conveying process gas into the chamber body 10; the first rotating disc 20 is rotatably arranged in the chamber body 10 around a first axis A1 and located below the air inlet hole 1222, and the axis direction of the air inlet hole 1222 is parallel to the first axis A1; the second rotating disc 30 is used to carry the wafer 100, and the first rotating disc 20 is used to drive the second rotating disc 30 to rotate around the first axis A1, and the second rotating disc 30 is rotatably arranged on the first rotating disc 20 around a second axis A2.

[0061] In use, when the first rotary disc 20 rotates around the first axis A1, the second rotary disc 30 is driven to rotate around the first axis A1, and the second rotary disc 30 also rotates around the second axis A2. The process gas enters the chamber body 10 from the gas inlet hole 1222 at the top of the chamber body 10, and diffuses to the first rotary disc 20 along the first axis A1. Since the gas inlet hole 1222 is arranged above the first rotary disc 20, the distance from the gas inlet hole 1222 to the first rotary disc 20 is the same on the inner side and the outer side of the first rotary disc 20 along the first axis A1. Since the axis of the gas inlet hole 1222 is parallel to the first axis A1, the process gas is blown to the first rotary disc 20 along the first axis A1. Therefore, the process gas reaches the inner side and the outer side of the first rotary disc 20 at substantially the same time, so that the diffusion of the process gas to the first rotary disc 20 is uniform, thereby ensuring the uniformity of the wafer. In the related art, the gas inlet hole is located at the center, and the gas outlet direction is along the radial direction of the large disc, that is, the radial direction of the first rotary disc of the present application. Therefore, the process gas first reaches the inner side of the large disc, and then reaches the outer side of the large disc, so that the uniformity of the diffusion of the process gas to the inner side and the outer side of the large disc cannot be ensured.

[0062] The process chamber of the present application can ensure that the diffusion of the process gas to the first rotary disc 20 is uniform when the process gas reaches the first rotary disc 20 by arranging the gas inlet hole 1222 at the top of the chamber body 10 along the first axis A1. Therefore, the uniformity of the diffusion is consistent, thereby ensuring the uniformity of the wafer.

[0063] As shown in FIG. 3 and FIG. 4, the gas inlets 1222 are in multiple groups, the gas inlets 1222 in the same group are multiple and are spaced apart around the first axis A1, the gas inlets 1222 in different groups are spaced apart in the radial direction of the first rotary disc 20, and the gas inlets 1222 in adjacent groups are staggered in the circumferential direction. For example, the gas inlets 1222 in the same group can be located on the same circumference around the first axis A1 and are spaced apart on the circumference; the gas inlets 1222 in different groups are located on circumferences of different radii, and the gap between each gas inlet 1222 on any circumference and each adjacent gas inlet 1222 on the adjacent circumference corresponds in the radial direction. By arranging multiple groups of gas inlets, the process gas can enter the inside of the chamber body 10 through different gas inlets at the same time, thereby improving the gas inlet efficiency and the uniformity of the gas inlet. By spacing apart the multiple gas inlets 1222 in the same group around the first axis A1, the uniformity of the process gas in the circumferential direction can be improved. By spacing apart the gas inlets 1222 in different groups in the radial direction of the first rotary disc 20, the uniformity of the distribution of the process gas in the radial direction can be improved. By staggering the gas inlets 1222 in adjacent groups in the circumferential direction, that is, one of the two adjacent groups of gas inlets is staggered by a certain distance in the circumferential direction from the other group, so that the gas inlets 1222 in one group correspond to the gap positions of the gas inlets 1222 in the other group, in this way, the process gas blown out by the two adjacent groups of gas inlets 1222 can be complementary, thereby improving the uniformity of the process gas in the circumferential and radial directions.

[0064] For example, as shown in FIG. 3, the chamber body 10 includes a chamber side wall 11, a gas inlet assembly 12, and a chamber base 13. The chamber side wall 11 is provided with a wafer transfer port 111. The gas inlet assembly 12 is connected to the top of the chamber side wall 11, the chamber base 13 is connected to the bottom of the chamber side wall 11, the gas inlet assembly 12, the chamber side wall 11, and the chamber base 13 enclose the internal space of the chamber body 10, and the first rotary disc 20 and the second rotary disc 30 are located below the gas inlet assembly 12 and above the chamber base 13.

[0065] As shown in FIG. 3, the gas inlet assembly 12 includes a gas inlet flange 121 and a hole plate 122. As shown in FIG. 4, the hole plate 122 is uniformly provided with multiple gas inlets 1222 penetrating around the first axis A1, the hole plate 122 is arranged on the top of the chamber side wall 11 and is in sealing cooperation with the chamber side wall 11, and each gas inlet 1222 is in communication with the inside of the chamber body 10.

[0066] As shown in FIG. 5, the gas inlet flange 121 has a first side and a second side in a direction parallel to the first axis A1, a plurality of annular grooves 1212 are arranged around the first axis A1 on the first side of the gas inlet flange 121, the plurality of annular grooves 1212 are distributed from inside to outside in the radial direction and are nested in sequence; a plurality of groups of gas inlet interfaces 1213 are arranged on the second side of the gas inlet flange 121, the plurality of groups of gas inlet interfaces 1213 are arranged one by one corresponding to the plurality of annular grooves 1212, and each group of gas inlet interfaces 1213 communicates with the corresponding annular groove 1212. The gas inlet interfaces 1213 of the same group are a plurality of gas inlet interfaces 1213, and the plurality of gas inlet interfaces 1213 are distributed in the circumferential direction. The gas inlet interfaces 1213 of different groups are staggered in the circumferential direction.

[0067] The first side of the gas inlet flange 121 is clamped on the hole plate 122, and the plurality of annular grooves 1212 and the hole plate 122 form a plurality of annular flow uniformization cavities, and all the flow uniformization cavities communicate with the chamber body 10 through the gas inlet hole 1222. The gas inlet interfaces 1213 of the gas inlet flange 121 communicate with the gas inlet pipeline, and the process gas in the gas inlet pipeline can be uniformly distributed after entering the flow uniformization cavities through the plurality of gas inlet interfaces 1213, and the process gas can be stabilized in the flow uniformization cavities. The plurality of flow uniformization cavities form concentric ring cavities, and in the direction from the center of the gas inlet flange 121 to the edge, the volumes of the plurality of flow uniformization cavities increase in sequence, so the number of corresponding gas inlet interfaces 1213 gradually increases. In order to reduce the mutual influence of gas inlet between different flow uniformization cavities, the two adjacent groups of gas inlet interfaces 1213 are arranged in the circumferential direction, that is, the gas inlet interfaces 1213 of different groups are not arranged in the same radial direction.

[0068] The process chamber provided by the embodiments of the present application realizes vertical gas inlet by arranging the gas inlet assembly 12 on the top of the chamber body 10, and can stabilize the process gas in the flow uniformization cavities by arranging the flow uniformization cavities and the uniformly distributed gas inlet interfaces 1213, so that the process gas can be uniformly diffused into the chamber body 10, the gas flow field in the reaction area is more stable in the radial direction, the process gas is more uniformly distributed, and the consistency of the quality of the wafer 100 is improved.

[0069] In some embodiments, the process chamber provided by the embodiments of the present application further includes an exhaust pipe having an exhaust hole communicating with the inside of the chamber body 10, and the process gas in the chamber body 10 can be discharged out of the chamber body 10 through the exhaust hole.

[0070] In some embodiments, the axis of the exhaust pipe can coincide with the first axis A1.

[0071] Further, in some embodiments, the first end of the exhaust pipe extends to the position of the first rotary disc 20, the second end of the exhaust pipe is located outside the chamber body 10, and the exhaust hole is a plurality of exhaust holes which are circumferentially spaced and distributed on the outer peripheral wall of the exhaust pipe close to the first end thereof. By providing a plurality of exhaust holes on the outer peripheral wall of the exhaust pipe, the process gas in the chamber body 10 can be uniformly exhausted, thereby further improving the uniformity of the distribution of the process gas in the chamber body 10.

[0072] In the embodiment in which the gas inlet assembly 12 comprises the gas inlet flange 121 and the aperture plate 122, the center of the aperture plate 122 is provided with a first mounting hole 1221 for mounting the exhaust pipe, a plurality of gas inlet holes 1222 are uniformly distributed around the first mounting hole 1221, and the first mounting hole 1221 is in communication with the inside of the chamber body 10. The center of the gas inlet flange 121 has a second mounting hole 1211 extending from the first side to the second side, and the second mounting hole 1211 is used for mounting the exhaust pipe. As shown in FIG. 6, the first mounting hole 1221 is in communication with the second mounting hole 1211, the exhaust pipe is arranged in the first mounting hole 1221 and the second mounting hole 1211, and the first exhaust pipe 40 is sealed and fitted with a plurality of sealing rings 14 between the inner wall of the second mounting hole 1211.

[0073] In the compound epitaxial reaction process, the by-products contain a large amount of particles, and the particles are easy to form defects on the surface of the wafer 100, resulting in a decrease in yield. Therefore, in order to reduce the impact on the quality of the wafer 100, a particle collection structure 70 is arranged inside the exhaust pipe, and the particle collection structure 70 is located between the exhaust hole and the second end of the exhaust pipe.

[0074] Further, the particle collection structure 70 is annular, the particle collection structure 70 is connected to the inner peripheral wall of the exhaust pipe, and the particle collection structure 70 and the inner peripheral wall of the exhaust pipe form a collection groove for collecting particles.

[0075] The structure of the process chamber exhaust pipe of the present application will be described in detail below in conjunction with specific embodiments:

[0076] As shown in FIG. 3, the exhaust pipe comprises a first exhaust pipe 40. The first exhaust pipe 40 is arranged through the top of the chamber body 10, and a first end of the first exhaust pipe 40 extends to the top of the first rotary disc 20, and the first exhaust pipe 40 is used for exhausting the process gas above the first rotary disc 20. In other words, the first exhaust pipe 40 penetrates the gas inlet assembly 12 from top to bottom and is sealingly matched with the gas inlet assembly 12; the first exhaust pipe 40 has a first exhaust passage 41 inside which is in communication with the outside, and the first exhaust pipe 40 is provided with a plurality of first exhaust holes 42 which are in communication with the first exhaust passage 41 on the outer peripheral wall close to the first end of the first exhaust pipe 40 (the first end is close to the first rotary disc 20), so that the process gas in the chamber body 10 enters the first exhaust passage 41 and is exhausted. By arranging the first exhaust pipe 40 and the plurality of first exhaust holes 42 on the outer peripheral wall close to the first end of the first exhaust pipe 40, the process gas above the first rotary disc 20 can be uniformly exhausted, thereby ensuring the uniformity of the process gas above the first rotary disc 20, and improving the consistency of the wafer in the process.

[0077] As shown in FIG. 3, the inner wall of the first exhaust passage 41 is provided with a particle collection structure 70, which is a ring-shaped particle collection ring. The outer peripheral wall of the particle collection ring is connected with the inner peripheral wall of the first exhaust passage 41, the first end of the particle collection ring is located close to the position of the first exhaust hole 42, the second end of the particle collection ring is located away from the position of the first exhaust hole 42, and the portion adjacent to the second end of the particle collection ring is a variable-diameter portion, the outer ring surface diameter of the variable-diameter portion decreases in the direction close to the second end, that is, the outer ring surface of the variable-diameter portion is a conical ring surface, and the first collection groove 71 is formed between the outer ring surface of the variable-diameter portion of the particle collection ring and the inner wall of the first exhaust passage 41. After the airflow passes through the variable-diameter portion, a vortex is formed at the variable-diameter portion and the inner wall of the first exhaust passage 41, and the vortex rolls the particles into the first collection groove 71 to collect the particles. The particles close to the center of the particle collection ring are driven by the upward airflow, and are exhausted to the outlet end of the first exhaust passage 41, so as to be exhausted with the process gas.

[0078] As shown in FIG. 3, the exhaust pipe further comprises a second exhaust pipe 80. The second exhaust pipe 80 is arranged through the bottom of the chamber body 10, a first end of the second exhaust pipe 80 is drivingly connected with the first rotary disc 20, and a second end of the second exhaust pipe 80 is used for being connected with a driving source, the second exhaust pipe 80 is used for exhausting the process gas below the first rotary disc 20 and driving the first rotary disc 20 to rotate around the first axis A1. That is, the second exhaust pipe 80 is arranged through the chamber base 13, the first end of the second exhaust pipe 80 is drivingly connected with the first rotary disc 20, and the second end of the second exhaust pipe 80 is used for being connected with an external driving source to drive the first rotary disc 20 to rotate around the first axis A1.

[0079] As shown in FIG. 7 and FIG. 8, the first end of the second exhaust pipe 80 is provided with a limiting plate 80a, and the bottom of the first rotary disc 20 is provided with a limiting groove 80b matching the limiting plate 80a, the limiting plate 80a is located in the limiting groove 80b, thereby achieving the limiting cooperation in the circumferential direction of the first rotary disc 20. In this embodiment, the axis of the second exhaust pipe 80 coincides with the first axis A1, and the second exhaust pipe 80 drives the first rotary disc 20 to rotate around the first axis A1 through the limiting cooperation of the limiting plate 80a and the limiting groove 80b.

[0080] For example, the limiting plate 80a is rectangular. However, this is not restrictive, and it can also be a polygon such as a triangle, a pentagon, etc., or a star, a gear, or a special shape, as long as the structure can achieve the circumferential limiting cooperation, which is within the protection scope of the present application.

[0081] As shown in FIG. 3 and FIG. 8, the second exhaust pipe 80 has a second exhaust passage 81 communicating with the outside, and the outer peripheral wall of the second exhaust pipe 80 is provided with a plurality of second exhaust holes 82 near the first end position, which communicate with the second exhaust passage 81, so that the process gas below the first rotary disc 20 enters the second exhaust passage 81 through the second exhaust holes 82 and is discharged. By driving the connection between the second exhaust pipe 80 and the first rotary disc 20, the first rotary disc 20 can be driven to rotate by the second exhaust pipe 80. That is, the second exhaust pipe 80 not only has an exhaust function, but also has a driving function, which is a typical one-useful-multiple.

[0082] As shown in FIG. 3, the upper cavity 16 is formed between the first rotary disc 20 and the gas inlet assembly 12, and the lower cavity 17 is formed between the first rotary disc 20 and the chamber base 13. It should be noted that the upper cavity 16 and the lower cavity 17 are not isolated. There is a space between the outer peripheral wall of the first rotary disc 20 and the chamber side wall 11, and the upper cavity 16 and the lower cavity 17 can communicate through the space between the first rotary disc 20 and the chamber side wall 11. The second exhaust holes 82 of the second exhaust pipe 80 communicate with the lower cavity 17. In the process, after the process gas blown by the gas inlet assembly 12 reacts with the wafer 100, part of the gas near the center of the first rotary disc 20 is discharged from the first exhaust passage 41 in the first exhaust pipe 40; part of the gas near the outer side of the first rotary disc 20 flows to the lower cavity 17 through the space between the first rotary disc 20 and the chamber side wall 11, and then is discharged from the second exhaust passage 81 of the second exhaust pipe 80.

[0083] The combination of central exhaust and edge exhaust can disperse the discharged process gas after reaction, reduce the risk of accumulation of particulate matter on the wafer 100, and improve the quality of the wafer 100.

[0084] It can be understood that the second exhaust pipe 80 is also provided with a particle collection structure 70, the particle collection structure 70 is an annular particle collection ring, the outer peripheral wall of the particle collection ring is connected with the inner peripheral wall of the second exhaust passage 81, the first end of the particle collection ring is located close to the second exhaust hole 82, the second end of the particle collection ring is located away from the second exhaust hole 82, and the particle collection ring has a variable diameter portion adjacent to the first end thereof, and the outer annular surface of the variable diameter portion of the particle collection ring forms a second collection groove 72 with the inner wall of the second exhaust passage 81. After the gas flow passes through the variable diameter portion, a vortex is formed at the variable diameter portion and the inner wall of the second exhaust passage 81, and the vortex rolls the particles into the second collection groove 72 to collect the particles. The particles close to the center of the particle collection ring are driven by the downward airflow and discharged to the outlet end of the second exhaust passage 81, so as to be discharged with the process gas.

[0085] For example, as shown in FIG. 3, the first rotary disc 20 is provided with a communication hole 23 penetrating from the top to the bottom of the first rotary disc 20; the first end of the first exhaust pipe 40 is sealingly connected with the top of the first rotary disc 20, the first exhaust passage 41 is in communication with the communication hole 23, and the first end of the second exhaust pipe 80 is sealingly connected with the bottom of the first rotary disc 20, the second exhaust passage 81 is in communication with the communication hole 23, so as to realize the communication between the second exhaust passage 81 and the first exhaust passage 41. By connecting the second exhaust passage 81 and the first exhaust passage 41, the exhaust efficiency can be improved.

[0086] It should be noted that in the embodiment, the exhaust pipe includes the first exhaust pipe 40 and the second exhaust pipe 80, but this is not restrictive. In some other embodiments not shown in the drawings, the exhaust pipe can only include the first exhaust pipe 40 or the second exhaust pipe 80. That is, the above-mentioned cases also belong to the protection scope of the present application without departing from the application concept and technical principles of the present application.

[0087] As shown in FIGS. 9-11, the process chamber further includes a dust collection ring 90 sleeved on the outer peripheral wall of the first rotary disc 20, the first rotary disc 20 and the dust collection ring 90 divide the chamber body 10 into an upper cavity 16 and a lower cavity 17, the dust collection ring 90 has a dust collection space 90a inside for communicating the upper cavity 16 and the lower cavity 17, so as to collect the particles in the process gas flowing through the dust collection space 90a. By providing the dust collection ring 90 to collect the particles in the chamber body 10, the particles can be reduced to drift in the chamber body 10.

[0088] As shown in FIGS. 9-11, the dust collecting ring 90 is provided with air inlet holes 911 at the top, and the dust collecting space 90a communicates with the upper cavity 16 through the air inlet holes 911; the inner circumferential wall of the dust collecting ring 90 is provided with air outlet holes 931, and the dust collecting space 90a communicates with the lower cavity 17 through the air outlet holes 931; the inner wall of the dust collecting space 90a is provided with a dust collecting groove 921, which is arranged below the air inlet holes 911, and the air outlet holes 931 are located between the dust collecting groove 921 and the air inlet holes 911 in the vertical direction. In use, the process gas in the upper cavity 16 enters the dust collecting space 90a through the air inlet holes 911 and then is discharged into the lower cavity 17 from the air outlet holes 931. In this process, the process gas changes from the vertical direction to the horizontal direction, and the particles in the process gas enter the dust collecting groove 921 below the air inlet holes 911 under the action of gravity, thereby realizing dust collection.

[0089] As shown in FIGS. 9-11, the air inlet holes 911 and the air outlet holes 931 are both multiple and are spaced apart around the circumference of the first turntable 20, and the sum of the flow areas of all the air inlet holes 911 is less than the sum of the flow areas of all the air outlet holes 931.

[0090] According to the relationship between flow rate and flow cross-sectional area, flow rate = flow rate / flow cross-sectional area, and the flow cross-sectional area is also the flow area. Since the sum of the flow areas of all the air inlet holes 911 is less than the sum of the flow areas of all the air outlet holes 931, when the same volume of process gas passes through, the flow rate of the gas passing through the air inlet holes 911 is faster, while the flow rate of the gas passing through the air outlet holes 931 is slower, that is, the flow rate of the process gas decreases after entering the dust collecting space 90a, so the probability of particle deposition increases, and part of the process gas forms a vortex after entering the dust collecting space 90a, so that the particles are gathered in the dust collecting groove 921, reducing the dispersion of particles in the process chamber.

[0091] As shown in FIGS. 9-11, the dust collecting ring 90 includes a ring-shaped top plate 91, a ring-shaped bottom plate 92, a ring-shaped inner plate 93, and a first limiting portion 94. The ring-shaped top plate 91 is arranged around the outer periphery of the first turntable 20, the ring-shaped bottom plate 92 is arranged below the ring-shaped top plate 91 and spaced apart from the ring-shaped top plate 91, and the ring-shaped inner plate 93 is arranged around the outer periphery of the first turntable 20 and connected to the inner periphery of the ring-shaped top plate 91. The ring-shaped top plate 91, the ring-shaped bottom plate 92, and the ring-shaped inner plate 93 form the dust collecting space 90a. The first limiting portion 94 is connected to the inner side of the ring-shaped inner plate 93.

[0092] As shown in FIG. 9, the first turntable 20 is provided with a second limiting portion matched with the first limiting portion 94, and the first limiting portion 94 and the second limiting portion are one-to-one corresponding, and the first limiting portion 94 and the corresponding second limiting portion are limited and matched in the circumferential direction of the first turntable 20, so that the dust collecting ring 90 is relatively fixed with the first turntable 20 and rotates synchronously.

[0093] For example, the first limiting part 94 is a plurality of limiting arms which are distributed in a circumferential direction, as shown in FIG. 19, and the second limiting part is a clamping groove of the first rotary disc 20. The limiting arms are arranged in the corresponding clamping grooves and are limited in the circumferential direction of the first rotary disc 20, so that the dust collecting ring 90 is relatively fixed to the first rotary disc 20 and rotates synchronously.

[0094] As shown in FIGS. 9-11, a plurality of air inlet holes 911 which are in communication with the dust collecting space 90a are arranged on the annular top plate 91 in a circumferential direction. As shown in FIG. 10, a plurality of air outlet holes 931 which are in communication with the dust collecting space 90a are arranged on the annular inner plate 93 in a circumferential direction, and the air outlet holes 931 are located below the first rotary disc 20, so that the gas blown from the air outlet holes 931 flows to the second exhaust hole 82.

[0095] As shown in FIG. 10, a dust collecting groove 921 is arranged on the annular bottom plate 92. The dust collecting groove 921 is an annular groove arranged inside the annular bottom plate 92 and is in communication with the dust collecting space 90a. Since the sum of the flow areas of all the air inlet holes 911 is less than the sum of the flow areas of all the air outlet holes 931, the flow rate of the process gas decreases after entering the dust collecting space 90a, the probability of particle deposition increases, and part of the process gas forms a vortex after entering the dust collecting space 90a, so that the particles are gathered in the dust collecting groove 921, reducing the dispersion of particles in the process chamber.

[0096] As shown in FIGS. 3 and 12, the first exhaust pipe 40 is rotatably arranged on the top of the chamber body 10 and is in sealing fit. The first end of the first exhaust pipe 40 is drivingly connected to the second rotary disc 30, and the second end of the first exhaust pipe 40 is drivingly connected to a driving source to drive the second rotary disc 30 to rotate around the second axis A2.

[0097] As shown in FIG. 6, the first exhaust pipe 40 is rotatably arranged in the first mounting hole 1221 and the second mounting hole 1211 of the air inlet assembly 12 and is in sealing fit, so that the first exhaust pipe 40 is rotatable relative to the air inlet assembly 12. The second end of the first exhaust pipe 40 is located outside the chamber body 10 and is drivingly connected to a driving source. For example, the driving source can be a servo motor.

[0098] In the embodiment, the outer peripheral wall of the first exhaust pipe 40 is sealingly fitted with the top of the chamber body 10, but allows relative rotation between the first exhaust pipe 40 and the top of the chamber body 10. For example, as shown in FIG. 6, a plurality of sealing rings 14 are arranged between the outer peripheral wall of the first exhaust pipe 40 and the inner peripheral wall of the first mounting hole 1221, and annular partitions 15 are arranged between adjacent sealing rings 14. The annular partitions 15 and the sealing rings 14 are pressed against each other to achieve a sealing surface and relative rotation. However, this is not limiting, and in some other embodiments not shown in the drawings, the first exhaust pipe 40 and the top of the chamber body 10 can also be fluidically sealed.

[0099] It should be further noted that in the embodiment, the first exhaust pipe 40 is rotatable relative to the chamber body 10, but this is not limiting, and in another embodiment not shown in the drawings, the first exhaust pipe 40 can also be fixedly connected relative to the chamber body 10, and can also drive the second turntable 30. This is because the axis of the first exhaust pipe 40 coincides with the first axis A1, and when the first turntable 20 drives the second turntable 30 to rotate, all the second turntables 30 revolve around the first exhaust pipe 40, that is, the first exhaust pipe 40 is relatively rotated relative to the second turntable 30, and thus can also drive the second turntable 30 to rotate. However, in this another embodiment, the rotation of the second turntable 30 is related to the rotation speed of the first turntable 20, and after the process starts, the rotation speed of the second turntable 30 can only be indirectly adjusted by adjusting the rotation speed of the first turntable 20. In the embodiment shown in FIG. 12, after the speed of the first turntable 20 is constant, the rotation speed of the second turntable 30 can be adjusted by changing the rotation speed of the first exhaust pipe 40, thereby decoupling the rotation speed of the first turntable 20 from the rotation speed of the second turntable 30, and making the rotation speed control of the second turntable 30 more flexible and accurate.

[0100] By driving the first exhaust pipe 40 and the second turntable 30, not only can the process gas after the reaction be discharged through the first exhaust hole 42 into the first exhaust passage 41, but also the second turntable 30 can be driven to rotate by the first exhaust pipe 40. That is, the first exhaust pipe 40 not only has a driving function, but also has an exhaust function, which is a typical one-for-many.

[0101] It can be understood that, as shown in FIG. 13, the second turntable 30 is arranged on the top of the first turntable 20, and the second turntable 30 is rotatably connected with the first turntable 20, and the second turntable 30 is rotatable relative to the first turntable 20 about the second axis A2, and the second axis A2 is parallel to the first axis A1; the first exhaust pipe 40 is drivingly connected with the second turntable 30, and the first exhaust pipe 40 is used to drive the second turntable 30 to rotate about the second axis A2.

[0102] In use, when the first rotary disc 20 rotates around the first axis A1, the second rotary disc 30 is driven to rotate around the first axis A1, and the second rotary disc 30 is also driven to rotate around the second axis A2 by the first exhaust pipe 40. Since the second rotary disc 30 is driven to rotate by the first exhaust pipe 40, it is a mechanical transmission, not a gas floating type, so the rotation speed of the second rotary disc 30 can be controlled by adjusting the rotation speed of the first exhaust pipe 40. As long as the stability of the rotation of the first exhaust pipe 40 is ensured, the stability of the rotation of the second rotary disc 30 can be controlled. Moreover, the rotation speed and the number of rotations of the second rotary disc 30 can be determined according to the number of rotations and the angle of the first exhaust pipe 40, so that the controllability of the rotation speed and the number of rotations is realized, and the stability of the rotation of the second rotary disc 30 is improved, thereby improving the consistency of the quality of the wafer 100.

[0103] The process chamber of the present application is provided with the first exhaust pipe 40, and the first exhaust pipe 40 is drivingly connected with the second rotary disc 30, so that the gas floating type is replaced by the mechanical transmission, thereby realizing the controllability and stability of the rotation of the second rotary disc 30 while the second rotary disc 30 rotates, and improving the consistency of the quality of the wafer 100.

[0104] It can be understood that in the present embodiment, the first axis A1 is the central axis of the first rotary disc 20, and the rotation of the first rotary disc 20 around the first axis A1 is equivalent to the rotation of the first rotary disc 20 around its own central axis. The second axis A2 is the central axis of the second rotary disc 30, and the rotation of the second rotary disc 30 around the second axis A2 is equivalent to the rotation of the second rotary disc 30 around its own central axis. That is, the first rotary disc 20 drives the second rotary disc 30 to revolve around the first axis A1, and the second rotary disc revolves around the first axis A1 while also rotating around its own axis, i.e. the second axis A2. However, this is not limiting, and in some other embodiments not shown in the drawings, the first axis A1 can not be the central axis of the first rotary disc 20, for example, the first axis A1 can be parallel to but offset from the central axis of the first rotary disc 20. Similarly, the second axis A2 can not be the central axis of the second rotary disc 30, for example, the second axis A2 can be parallel to but offset from the central axis of the second rotary disc 30.

[0105] It should be further noted that in the present embodiment, as shown in FIG. 12, the second rotary disc 30 is provided in a plurality, and the plurality of second rotary discs 30 are arranged around the first exhaust pipe 40, and all the second rotary discs 30 are drivingly connected with the first exhaust pipe 40, so that the first exhaust pipe 40 drives all the second rotary discs 30 to synchronously rotate around their respective second axes A2. By providing a plurality of second rotary discs 30, the epitaxial layer growth of a plurality of wafers 100 can be realized, and since all the second rotary discs 30 are drivingly connected with the first exhaust pipe 40, all the second rotary discs 30 can be driven to synchronously rotate by the first exhaust pipe 40, thereby ensuring the consistency of the quality of the wafers 100.

[0106] As shown in FIG. 12, the first exhaust pipe 40 is provided with a first driving member 40a, and the second turntable 30 is provided with a second driving member 30a matched with the first driving member 40a, the first driving member 40a and the second driving member 30a drive match to drive the first exhaust pipe 40 to drive the second turntable 30 to rotate around the second turntable 30.

[0107] For example, the first driving member 40a is a first gear provided on the outer peripheral wall of the first exhaust pipe 40, and the second driving member 30a is a second gear provided on the bottom of the first turntable 20, the first gear and the second gear are engaged.

[0108] Specifically, as shown in FIG. 12, the first driving member 40a is a first gear, and the first gear is sleeved on the outer peripheral wall of the first exhaust pipe 40. The second driving member 30a is a second gear, and the second gear is engaged with the first gear. As shown in FIG. 13, the second gear has a first end and a second end along the second axis A2, the first end of the second gear is fixedly connected with the second turntable 30, and the second end of the second gear is rotatably connected with the first turntable 20. When the first exhaust pipe 40 rotates, the first gear drives the second gear to rotate, and the rotating second gear drives the second turntable 30 to rotate around the second axis A2.

[0109] For example, as shown in FIG. 14, the first end of the second gear is provided with a quadrangular prism, and the second end of the second gear is a cylinder. As shown in FIG. 15, the bottom of the second turntable 30 is provided with a rectangular groove 31 matched with the quadrangular prism, the quadrangular prism is located in the rectangular groove 31 and is limited in the circumferential direction of the second turntable 30, so that the second gear drives the second turntable 30 to rotate around the second axis A2. As shown in FIG. 13, the first turntable 20 is provided with a circular groove 21 matched with the cylinder, and the cylinder is located in the circular groove 21 and is limited in the circumferential direction of the first turntable 20, so that the first turntable 20 drives the gear to revolve around the first axis A1.

[0110] It can be understood that when the second turntable 30 is multiple, the second gear of each second turntable 30 is engaged with the first gear, thereby realizing synchronous rotation.

[0111] The process chamber of the present application adopts a mechanical gear transmission mode to adjust the transmission ratio between the first exhaust pipe 40 and the second turntable 30 by setting the number of teeth and the radius of the first gear and the second gear, thereby realizing accurate control of the rotation speed and rotation angle of the second turntable 30.

[0112] As shown in FIG. 3, the chamber side wall 11 is provided with a wafer transfer port 111 for communication with the outside, and the second turntable 30 has a wafer transfer position close to the wafer transfer port 111, and the first turntable 20 drives the second turntable 30 to move between the wafer transfer position and the non-wafer transfer position, thereby facilitating the receiving and sending of the wafer 100.

[0113] Before the process starts, the first rotary disc 20 rotates the plurality of second rotary discs 30 to the wafer transfer position in turn by rotation to receive the wafer 100 from the wafer transfer port 111 into the inside of the chamber body 10; and after the process is completed, the first rotary disc 20 rotates the plurality of second rotary discs 30 to the wafer transfer position in turn by rotation to facilitate the wafer 100 to be sent out from the wafer transfer port 111.

[0114] As shown in FIG. 3 and FIG. 16, the process chamber further comprises a lifting mechanism 50. The lifting mechanism 50 is arranged below the first rotary disc 20 and close to the wafer transfer port 111 position of the chamber body 10, and the lifting mechanism 50 is used to lift the wafer 100 on the second rotary disc 30 at the wafer transfer position, or lower and place the wafer 100 on the second rotary disc 30 at the wafer transfer position.

[0115] The process chamber of the present application rotates the second rotary disc 30 by mechanical transmission, so there is no need to consider the problem of interaction between the airflow and the second rotary disc 30. Therefore, the lifting of the wafer 100 can be realized by setting the lifting device, thereby facilitating the placement and removal of the wafer 100.

[0116] As shown in FIG. 3 and FIG. 16, the lifting mechanism 50 comprises a bracket 51 and a lifting rod 52. The bracket 51 is arranged below the first rotary disc 20, and the lifting rod 52 is arranged on the bracket 51, wherein the lifting rod 52 is at least three and is spaced apart around the second axis A2. For example, in the present embodiment, the lifting rod 52 is three.

[0117] As shown in FIG. 7 and FIG. 16, the first rotary disc 20 is provided with a plurality of first avoiding holes 22, and as shown in FIG. 15, the second rotary disc 30 is provided with a plurality of second avoiding holes 32. At the wafer transfer position of the second rotary disc 30, each lifting rod 52 corresponds to a first avoiding hole 22 and a second avoiding hole 32.

[0118] The lifting rod 52 has an extended state and a retracted state. As shown in FIG. 17, when the lifting rod 52 is in the extended state, the lifting rod 52 penetrates the first avoiding hole 22 and the second avoiding hole 32 to lift the wafer 100; and as shown in FIG. 3, when the lifting rod 52 is in the retracted state, the lifting rod 52 is located below the first rotary disc 20 and avoids the first rotary disc 20.

[0119] As shown in FIG. 18, the process chamber further comprises a shield 60 and a connecting member (not shown in the figure). The shield 60 is arranged above the first turntable 20, and a containing space is formed between the bottom of the shield 60 and the top of the first turntable 20, and the first driving member 40a and the second driving member 30a are located in the containing space; the connecting member is connected between the shield 60 and the first turntable 20, so that the shield 60 and the first turntable 20 rotate synchronously. By arranging the shield 60 above the first turntable 20 and arranging the first driving member 40a and the second driving member 30a in the containing space between the first turntable 20 and the shield 60, the particles generated by the mutual friction of the first driving member 40a and the second driving member 30a can be effectively shielded, and the particles can be prevented from escaping to the surface of the wafer 100, thereby improving the quality of the wafer 100.

[0120] As shown in FIG. 18, the shield 60 is provided with a third avoiding hole 61 and a fourth avoiding hole 62, the second turntable 30 is located in the third avoiding hole 61 and is in clearance fit with the third avoiding hole 61, and the first exhaust pipe 40 is arranged in the fourth avoiding hole 62 and is in clearance fit with the fourth avoiding hole 62. By arranging the third avoiding hole 61 and the fourth avoiding hole 62, the first exhaust pipe 40 and the second turntable 30 can be prevented from interfering with the shield 60, and at the same time, since the second turntable 30 is in clearance fit with the third avoiding hole 61, the movement of the second turntable 30 can be ensured, and particles generated by friction can be avoided. Similarly, since the first exhaust pipe 40 is in clearance fit with the fourth avoiding hole 62, particles generated by friction can also be avoided. Moreover, since the clearance between the second turntable 30 and the inner wall of the third avoiding hole 61 and the clearance between the first exhaust pipe 40 and the inner wall of the fourth avoiding hole 62 are small, the particles generated by the mutual friction of the first driving member 40a and the second driving member 30a can be effectively prevented from escaping to the surface of the wafer 100, thereby improving the quality of the wafer 100.

[0121] As shown in FIG. 18 and FIG. 19, the shield 60 comprises an inner side sub-plate 63 and an outer side sub-plate 64. The inner side sub-plate 63 is connected with the first turntable 20, the inner side sub-plate 63 is located between the second turntable 30 and the first exhaust pipe 40, and the inner side sub-plate 63 is provided with the fourth avoiding hole 62 and a first avoiding slot 631; the outer side sub-plate 64 is detachably connected with the first turntable 20, the outer side sub-plate 64 is located on the side of the second turntable 30 away from the first exhaust pipe 40, and the outer side sub-plate 64 is provided with a second avoiding slot 641, and the first avoiding slot 631 and the second avoiding slot 641 enclose the third avoiding hole 61. The shield 60 is separated, on the one hand, the installation and disassembly of the shield 60 are facilitated; on the other hand, since the outer side sub-plate 64 is relatively quickly consumed, when the consumption of the outer side sub-plate 64 reaches a certain degree, the outer side sub-plate 64 can be replaced alone, and the step of disassembling the inner side sub-plate 63 can be omitted, thereby reducing the maintenance cost.

[0122] For example, the inner sub-plate 63 is connected with the first rotary disc 20 by a part of the plurality of connecting members, and the outer sub-plate 64 is connected with the first rotary disc 20 by another part of the plurality of connecting members, the connecting members are positioning pins, the bottom of the inner sub-plate 63 and the bottom of the outer sub-plate 64 are provided with a plurality of positioning pins, and the top of the first rotary disc 20 is provided with pin holes corresponding to the positioning pins one by one, and the pin holes are blind holes. In use, after the inner sub-plate 63 and the outer sub-plate 64 are placed on the first rotary disc 20, the positioning pins are located in the corresponding pin holes, and the limiting cooperation in the circumferential direction of the first rotary disc 20 is realized, so that the first rotary disc 20 can drive the inner sub-plate 63 and the outer sub-plate 64 to rotate. At the same time, since the pin holes are blind holes, the support of the positioning pins can be realized, so that the inner sub-plate 63 and the first rotary disc 20 and the outer sub-plate 64 and the first rotary disc 20 form accommodating spaces.

[0123] It can be understood that, in order to ensure the stability of the process gas flow, the top surfaces of the inner sub-plate 63 and the outer sub-plate 64 are located at the same horizontal height.

[0124] According to another aspect of the present application, a semiconductor process equipment is also disclosed, which comprises a heating device and the process chamber.

[0125] It can be understood that the above embodiments are only exemplary embodiments for illustrating the principles of the present application, and the present application is not limited thereto. Various modifications and improvements can be made by those skilled in the art without departing from the spirit and essence of the present application, and these modifications and improvements are also regarded as the protection scope of the present application.

Claims

1. A process chamber, comprising: Comprising: a chamber body, a top of which is provided with gas inlets for conveying process gas into the chamber body; a first rotary disc rotatably arranged in the chamber body about a first axis and located below the gas inlets, the gas inlets being parallel to the first axis; a second rotary disc for carrying wafers, the second rotary disc being rotatably arranged on the first rotary disc about a second axis.

2. The process chamber according to claim 1, wherein: the gas inlets are provided in multiple groups, each group of the gas inlets being provided in multiple and spaced apart around the first axis, different groups of the gas inlets being spaced apart in a radial direction of the first rotary disc, and adjacent groups of the gas inlets being circumferentially staggered.

3. The process chamber of claim 1, wherein, Further comprising: an exhaust pipe having exhaust holes communicating with the chamber body, a first end of the exhaust pipe extending to a position of the first rotary disc, and a second end of the exhaust pipe being located outside the chamber body; the exhaust holes are provided in multiple and spaced apart in a circumferential direction on an outer peripheral wall of the exhaust pipe close to the first end thereof.

4. The process chamber according to claim 3, wherein: the exhaust pipe is internally provided with a particle collection structure between the exhaust holes and the second end of the exhaust pipe.

5. The process chamber according to claim 4, wherein: the particle collection structure is annular, the particle collection structure being connected to an inner peripheral wall of the exhaust pipe, and the particle collection structure and the inner peripheral wall of the exhaust pipe forming a collection groove for collecting particles.

6. The process chamber of claim 3, wherein, the exhaust pipe comprises: a first exhaust pipe penetrating through the top of the chamber body, a first end of the first exhaust pipe extending to a top of the first rotary disc, and the first exhaust pipe being used for exhausting the process gas above the first rotary disc.

7. The process chamber of claim 6, wherein, the exhaust pipe further comprises: a second exhaust pipe penetrating through a bottom of the chamber body, a first end of the second exhaust pipe being drivingly connected to the first rotary disc, and a second end of the second exhaust pipe being used for being connected to a driving source, the second exhaust pipe being used for exhausting the process gas below the first rotary disc and driving the first rotary disc to rotate about the first axis.

8. The process chamber according to claim 7, wherein: the first rotary disc is provided with a communication hole penetrating through a top to a bottom of the first rotary disc; the first end of the first exhaust pipe is sealingly fitted to the top of the first rotary disc, the first exhaust pipe is internally communicated with the communication hole, and the first end of the second exhaust pipe is sealingly fitted to the bottom of the first rotary disc, the second exhaust pipe is internally communicated with the communication hole.

9. The process chamber of any of claims 1-8, wherein, the process chamber further comprises: a dust collection ring sleeved on an outer peripheral wall of the first rotary disc, the first rotary disc and the dust collection ring dividing an inner portion of the chamber body into an upper chamber and a lower chamber, and the dust collection ring being internally provided with a dust collection space communicating the upper chamber and the lower chamber for collecting particles in the process gas flowing through the dust collection space.

10. The process chamber according to claim 9, wherein: The dust collecting ring top is provided with an air inlet hole, and the dust collecting space is communicated with the upper cavity through the air inlet hole; The inner circumferential wall of the dust collecting ring is provided with an air outlet hole, and the dust collecting space is communicated with the lower cavity through the air outlet hole; The inner wall of the dust collecting space is provided with a dust collecting groove, the dust collecting groove is arranged below the air inlet hole, and the air outlet hole is located between the dust collecting groove and the air inlet hole in the vertical direction.

11. The process chamber of claim 10, wherein, The air inlet hole and the air outlet hole are both multiple and are spaced apart around the circumference of the first rotating disc, and the sum of the flow areas of all the air inlet holes is less than the sum of the flow areas of all the air outlet holes.

12. The process chamber of claim 6, wherein, The first exhaust pipe is rotatably arranged on the top of the chamber body and is in sealing fit, a first end of the first exhaust pipe is drivingly connected with the second rotating disc, and a second end of the first exhaust pipe is used to be drivingly connected with a driving source to drive the second rotating disc to rotate around the second axis.

13. The process chamber of claim 12, wherein, The second rotating disc is multiple, and multiple second rotating discs are arranged around the first exhaust pipe, all the second rotating discs are drivingly connected with the first exhaust pipe to make the first exhaust pipe drive all the second rotating discs to rotate synchronously around the second axis respectively, wherein the second axis is parallel to the first axis.

14. The process chamber of claim 12, wherein, The first exhaust pipe is provided with a first driving member, the second rotating disc is provided with a second driving member matched with the first driving member, and the first driving member and the second driving member are drivingly matched to make the first exhaust pipe drive the second rotating disc to rotate around the second rotating disc.

15. The process chamber of claim 14, wherein, The first driving member is a first gear arranged on the outer circumferential wall of the first exhaust pipe, the second driving member is a second gear arranged on the bottom of the first rotating disc, and the first gear is engaged with the second gear.

16. The process chamber of claim 14, wherein, The process chamber further comprises: A guard plate arranged above the first rotating disc and synchronously rotating with the first rotating disc, a containing space is formed between the bottom of the guard plate and the top of the first rotating disc, and the first driving member and the second driving member are located in the containing space.

17. The process chamber of claim 16, wherein, The guard plate is provided with a third avoiding hole and a fourth avoiding hole, the second rotating disc is located in the third avoiding hole and is in clearance fit with the third avoiding hole, and the first exhaust pipe is arranged in the fourth avoiding hole and is in clearance fit with the fourth avoiding hole.

18. The process chamber of claim 17, wherein, The guard plate comprises: An inner side sub-plate connected with the first rotating disc and located between the second rotating disc and the first exhaust pipe, the fourth avoiding hole and a first avoiding groove are arranged on the inner side sub-plate. An outer sub-plate is detachably connected with the first rotary disc, the outer sub-plate is located at a side of the second rotary disc away from the first exhaust pipe, a second avoiding groove is arranged on the outer sub-plate, and the first avoiding groove and the second avoiding groove enclose the third avoiding hole.

19. The process chamber of any of claims 1-8, wherein, The process chamber further comprises: A lifting mechanism is arranged below the first rotary disc, the lifting mechanism has a plurality of lifting rods, and all the lifting rods support the wafer by elongation; A plurality of first avoiding holes are arranged on the first rotary disc, and the first avoiding holes are arranged one by one corresponding to the lifting rods; A plurality of second avoiding holes are arranged on the second rotary disc, and the first avoiding holes and the second avoiding holes are one by one corresponding by rotating the second rotary disc relative to the first rotary disc, so that the elongated lifting rods penetrate the first avoiding holes and the second avoiding holes and support the wafer.

20. A semiconductor process apparatus, characterized by, A process chamber according to any one of claims 1 to 19 and a heating device.

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