Substrate processing apparatus including cooling module

Abstract

The present disclosure relates to a substrate processing apparatus including a cooling module for cooling a substrate after heat treatment. The substrate processing apparatus includes: a cooling plate for seating the substrate in the inner space of the cooling module; a gas injection part for supplying a cooling gas to the inner space of the cooling module; and a diffuser disposed between the cooling plate and the gas injection part and having injection holes for uniformly supplying the cooling gas to the upper part of the substrate. The injection holes are arranged to be spaced apart from each other in a concentric circle from the center of the bottom surface of the diffuser.

Description

Substrate processing device including a cooling module

[0001] The present disclosure relates to a substrate processing apparatus, and more specifically, to a substrate processing apparatus comprising a cooling module for cooling a substrate.

[0002] During the manufacturing of semiconductor integrated circuit devices, processes for heating and cooling the substrate are performed. For example, to perform the reflow process, which electrically bonds a device to a substrate by soldering to melt solder balls onto the substrate during the semiconductor manufacturing process, a process is performed in which the substrate is heated to a high temperature and then cooled to a low temperature.

[0003] The equipment for the reflow process is equipped with a separate cooling chamber. A cooling plate that cools the substrate through heat exchange with the substrate may be provided within the cooling chamber. Additionally, cooling of the substrate can be performed by injecting cooling gas into the cooling chamber.

[0004] The present disclosure aims to provide a substrate processing apparatus capable of uniformly cooling a substrate and increasing cooling efficiency.

[0005] In addition, the present disclosure aims to provide a substrate processing apparatus capable of ensuring temperature uniformity when cooling a warpage substrate.

[0006] The problems that this disclosure aims to solve are not limited to those described above, and other unmentioned problems will be clearly understood by a person skilled in the art from the description below.

[0007] One embodiment of the present disclosure provides a substrate processing apparatus comprising a cooling module for cooling a substrate after heat treatment, the apparatus comprising: a cooling plate for placing the substrate in the internal space of the cooling module; a gas injection unit for supplying cooling gas to the internal space of the cooling module; and a diffuser disposed between the cooling plate and the gas injection unit and having injection holes for uniformly supplying the cooling gas to the upper surface of the substrate, wherein the injection holes are spaced apart from each other in a concentric circle from the center of the bottom surface of the diffuser.

[0008] One embodiment of the present disclosure may provide a substrate processing apparatus in which the injection holes include first holes arranged along a first circumference having a first radius from the center and second holes arranged along a second circumference having a second radius from the center, wherein the second radius is larger than the first radius.

[0009] One embodiment of the present disclosure may provide a substrate processing apparatus in which the first holes are arranged at equal intervals along the first circumference and the second holes are arranged at equal intervals along the second circumference.

[0010] One embodiment of the present disclosure may provide a substrate processing device in which the diffuser comprises a horizontal disc portion on which the injection holes are arranged and a support member connected to the edge of the horizontal disc portion, and the gas injection portion communicates with an internal space enclosed by the horizontal disc portion and the support member of the diffuser.

[0011] One embodiment of the present disclosure may provide a substrate processing apparatus that further includes a passage through which a cooling fluid for cooling the substrate circulates within the cooling plate, and a lifting / lowering member for moving the cooling plate up and down.

[0012] One embodiment of the present disclosure may provide a substrate processing apparatus in which the cooling gas is purified nitrogen gas.

[0013] One embodiment of the present disclosure may provide a substrate processing apparatus comprising: a heating module for performing a reflow process on a substrate; and a cooling module disposed within a single chamber with the heating module and cooling the heated substrate, wherein the cooling module is provided with a cooling plate for placing the substrate, a gas injection unit for supplying a cooling gas for cooling the substrate, and a diffuser disposed between the cooling plate and the gas injection unit, wherein the diffuser has injection holes formed to uniformly supply the cooling gas to the upper surface of the substrate, and the injection holes are arranged spaced apart from each other in a concentric circle shape from the center of the bottom surface of the diffuser.

[0014] One embodiment of the present disclosure may provide a substrate processing device comprising a diffuser, a horizontal disc portion having the injection holes arranged thereon, and a support member connected to the edge of the horizontal disc portion.

[0015] One embodiment of the present disclosure may provide a substrate processing device further comprising a housing that partitions the internal space of the cooling module, wherein the support member of the diffuser is fixed to the upper wall of the housing.

[0016] One embodiment of the present disclosure may provide a substrate processing apparatus in which the injection holes are not disposed in the inner region of a circle having a minimum radius among the circles forming the concentric circles.

[0017] According to one embodiment of the present disclosure, the uniformity and cooling efficiency of substrate cooling can be improved.

[0018] According to one embodiment of the present disclosure, the warpage substrate can also ensure temperature uniformity when cooling.

[0019] The effects according to the present disclosure are not limited to those described above, and other unmentioned effects will be clearly understood by a person skilled in the art from the description below.

[0020] FIG. 1 is a drawing illustrating an exemplary substrate processing apparatus according to one embodiment of the present disclosure.

[0021] FIG. 2 is a cross-sectional view of a cooling module of a substrate processing device according to one embodiment of the present disclosure.

[0022] FIGS. 3a and 3b are plan views of a diffuser of a cooling module according to one embodiment of the present disclosure.

[0023] FIGS. 4 and FIGS. 5 illustrate graphs showing the process of cooling a substrate according to experimental examples of the present disclosure.

[0024] Hereinafter, exemplary embodiments according to the present invention will be described in detail with reference to the contents described in the attached drawings. However, the present invention is not limited or restricted by exemplary embodiments. Unless otherwise defined, all terms used in this specification (including technical and scientific terms) shall be used in a meaning that is commonly understood by those skilled in the art to which this disclosure belongs, but this may vary depending on the intent of those skilled in the art, case law, the emergence of new technology, etc.

[0025] Furthermore, terms defined in commonly used dictionaries are not to be interpreted ideally or excessively unless explicitly and specifically defined otherwise. In certain cases, terms have been selected at the applicant's discretion, and in such cases, their meanings will be described in detail in the relevant explanatory sections. Accordingly, terms used in this disclosure should be defined not merely by their names, but based on their meanings and the content throughout this disclosure.

[0026] Throughout this specification, when a part is described as "comprising" a certain component, this means that, unless specifically stated otherwise, it does not exclude other components but may include additional components. Furthermore, the singular form used in this specification includes the plural form unless specifically stated otherwise. Additionally, the expression "at least one of a, b, and / or c" as used throughout this specification may encompass 'a alone', 'b alone', 'c alone', 'a and b', 'a and c', 'b and c', or 'a, b, and c all'.

[0027] Meanwhile, terms such as "first and / or second" used in this specification may be used to describe various components, but they are used solely for the purpose of distinguishing one component from another and are not intended to limit the scope to the components referred to by such terms. For example, without departing from the scope of the present invention, the first component may be named the second component, and the second component may also be named the first component.

[0028] Additionally, terms such as “…part,” “…module,” etc., as described in this specification refer to a unit that processes at least one function or operation, which may be implemented in hardware or software, or a combination of hardware and software. Furthermore, embodiments of this disclosure may be represented in this specification by functional block configurations and various processing steps. These functional blocks may be implemented by various numbers of hardware and / or software configurations that execute specific functions. For example, embodiments of this disclosure may employ integrated circuit configurations such as memory, processing, logic, look-up tables, etc., which can execute various functions under the control of one or more microprocessors or other control devices.

[0029] Hereinafter, various embodiments of the present disclosure will be described in detail with reference to the accompanying drawings. In describing the embodiments, technical details that are well known in the art to which the present invention pertains and are not directly related to the present invention will be omitted. This is to ensure that the essence of the present invention is conveyed more clearly without obscuring it by omitting unnecessary explanations. For the same reason, some components in the accompanying drawings may be exaggerated, omitted, or schematically depicted. Furthermore, the size of each component does not entirely reflect its actual size. Throughout this specification, the same reference numerals may refer to the same or corresponding components.

[0030] FIG. 1 is a drawing illustrating an exemplary substrate processing apparatus according to one embodiment of the present disclosure.

[0031] Referring to FIG. 1, a substrate processing device (100) may include a load port (10), a substrate transport module (20), and a substrate processing module (30). The load port (10), the substrate transport module (20), and the substrate processing module (30) may be arranged sequentially along one direction. The substrate transport module (20) may be placed between the load port (10) and the substrate processing module (30).

[0032] A carrier (12) containing a plurality of substrates is seated in the load port (10). The load port (10) may be provided in multiple numbers and may be arranged in a row. The number of load ports (10) may vary depending on the process efficiency and footprint conditions of the substrate processing module (30). A plurality of slots may be formed in the carrier (12) to accommodate a plurality of substrates arranged horizontally with respect to the ground. For example, a Front Opening Unified Pod (Foup) may be used as the carrier (12).

[0033] A conveying mechanism (25) may be provided in the substrate conveying module (20). The conveying mechanism (25) may have a conveying arm (21) that holds and moves the substrate, a rotating platform (22) that rotatably supports the conveying arm (21), and a rotating platform (23) equipped with the rotating platform (22). The conveying mechanism (25) can convey the substrate between the load port (10) and the substrate processing module (30). Inside the substrate conveying module (20), a guide rail (24) that extends along the longitudinal direction of the substrate conveying module (20) may be provided. The rotating platform (23) is provided on the guide rail (24), and the conveying mechanism (25) is configured to be movable along the guide rail (24).

[0034] The substrate processing module (30) may be a module in which a predetermined process is performed on a substrate. For example, the substrate processing module (30) may perform a reflow process on the substrate in various temperature ranges. Alternatively, the substrate processing module (30) may perform processes such as etching, deposition, etching, baking, etc. The substrate processing module (30) may be equipped with a plurality of stations (1, 2, 3, 4, 5, 6) in which a substrate is placed and processed inside the chamber (31). Although it is shown as having 6 stations in the drawing, this is merely an example, and the number of stations can be appropriately modified.

[0035] Meanwhile, on one side of the chamber (31), a passage (32) including an inlet for introducing a substrate and an outlet for extracting a substrate may be provided. The chamber (31) may be a space enclosed by a housing, and its interior may be maintained under vacuum.

[0036] Additionally, a spider (not shown) for moving a substrate between stations (1, 2, 3, 4, 5, 6) may be placed in the approximately central part of the chamber (31). The spider is positioned in the central part of the chamber (31) so as to be rotatable and vertically movable, and serves to move a substrate between stations (1, 2, 3, 4, 5, 6).

[0037] When a plurality of stations (1, 2, 3, 4, 5, 6) are provided inside the chamber (31), means for process partitioning between each station (1, 2, 3, 4, 5, 6) may be required. That is, when different processes are performed between adjacent stations (1, 2, 3, 4, 5, 6), it is necessary to partition the stations (1, 2, 3, 4, 5, 6) so as not to reduce process efficiency and not to affect the processes of the stations (1, 2, 3, 4, 5, 6).

[0038] These partitioning means can be implemented in various forms. For example, multiple stations (1, 2, 3, 4, 5, 6) can be physically implemented. In this case, since the substrate between stations (1, 2, 3, 4, 5, 6) cannot be moved if the stations are completely isolated with a blocking plate or the like, the multiple stations (1, 2, 3, 4, 5, 6) can be partitioned from each other in a so-called 'semi-sealed or semi-isolated' manner, allowing the substrate to move. For example, even when the stations (1, 2, 3, 4, 5, 6) are partitioned with a blocking plate or the like, the blocking plate may be provided with an opening that allows the substrate to move. Through such an opening, multiple stations (1, 2, 3, 4, 5, 6) are not completely isolated but can maintain a semi-closed or semi-isolated state.

[0039] Meanwhile, a curtain gas, such as an inert gas, may be supplied between multiple stations (1, 2, 3, 4, 5, 6) to partition each station (1, 2, 3, 4, 5, 6). In this case, the inert gas may be supplied toward the inside of the chamber (31) from at least one of the bottom, ceiling, and side of the chamber (31). Additionally, the inert gas may be supplied to the central part of the chamber (31) to partition each station (1, 2, 3, 4, 5, 6) more effectively. When the inert gas is supplied in this manner, an exhaust means for exhausting residual gas, including the aforementioned inert gas, may be connected to the chamber (31).

[0040] Any one (6) of the plurality of stations (1, 2, 3, 4, 5, 6) may be, for example, a load lock station. The load lock station may be positioned adjacent to the substrate transport module (20). The load lock station may be a station where substrates flowing into the substrate processing module (30) for the substrate processing process temporarily stay.

[0041] At least one of the plurality of stations (1, 2, 3, 4, 5, 6) may be, for example, a heating station (or heating module). The heating station may be a station that performs a reflow process on a substrate. After undergoing the reflow process, the substrate at a high temperature (about 150°C) may be cooled in a cooling station (5).

[0042] Any one (5) of the plurality of stations (1, 2, 3, 4, 5, 6) may be a cooling station. In the cooling station, a substrate at a high temperature can be cooled to a low temperature after heat treatment. To cool the substrate, cooling gas may be supplied to the cooling station. Cooling gas may be provided from a first supply unit (P1) and a second supply unit (P2). Cooling gas from the first supply unit (P1) may be supplied to the internal space of the chamber containing the cooling station through a first flow path, and cooling gas from the second supply unit (P2) may be supplied to the internal space of the chamber containing the cooling station through a second flow path. The first flow path and the second flow path may be connected to each other. Gas sensors (PS1, PS2) may be provided on the first flow path and the second flow path, respectively. A flow restrictor (C1) may be provided on the first flow path. A flow limiter can maintain a specific pressure while the fluid is flowing or allow the fluid to flow at a specific speed. A mass flow controller (MFC) (C2), which is a device for precisely controlling the flow rate of the fluid, may be provided on the second flow path.

[0043] Since multiple stations (1, 2, 3, 4, 5, 6) are provided within a single chamber (31), there is no need for transport such as moving substrates in or out between chambers. Therefore, contamination by particles during substrate processing can be minimized. In addition, since multiple process operations are possible within a single chamber (31), the equipment can be simplified. Cost reduction is also possible by reducing the need to create a vacuum atmosphere inside the chamber every time a substrate is transported.

[0044] Hereinafter, the components provided within the chamber (31) for cooling a substrate placed on a cooling station will be described in detail. In this specification, for convenience, the device for cooling the substrate will be referred to as a cooling module.

[0045] FIG. 2 is a cross-sectional view of a cooling module of a substrate processing device according to one embodiment of the present disclosure.

[0046] FIGS. 3a and 3b are plan views of a diffuser of a cooling module according to one embodiment of the present disclosure.

[0047] First, referring to FIG. 2, the cooling module (200) may include a housing (40) that provides a chamber space inside, a cooling plate (50) provided inside the housing (40), a lifting member (60) that supports the cooling plate (50), a gas injection unit (70) that supplies cooling gas into the housing (40), and a diffuser (80) that sprays the cooling gas supplied from the gas injection unit (70) onto a substrate (S).

[0048] The housing (40) provides a space within which a cooling process is performed. The internal space partitioned by the housing (40) is maintained under vacuum. The housing (40) may be a part of the housing that defines the space within the chamber (31) described with reference to FIG. 1. Gas supplied into the housing (40) may be exhausted through a separate exhaust member. The housing (40) may include a bottom wall (40a) and a top wall (40b) facing each other. The bottom wall (40a) may be located below the cooling plate (50). The top wall (40b) may be located on the cooling plate (50).

[0049] A cooling plate (50) is provided inside the housing (40) and can support or support a substrate (S). The cooling plate (50) may be provided in a structure that fixes the substrate (S) by mechanical clamping or in a structure that fixes the substrate (S) by electrostatic force. The cooling plate (50) may be provided in a plate shape having a radius larger than that of the substrate (S). The substrate (S) may be placed on the upper surface of the cooling plate (50). The cooling plate (50) may be positioned at a predetermined height spaced apart from the bottom wall (40a) of the housing (40).

[0050] Meanwhile, cooling pipes (not shown) may be arranged within the cooling plate (50) to allow cooling fluid to circulate. The cooling pipes are connected to a cooling fluid supply unit (not shown) and provide a passage for the cooling fluid to circulate. The cooling pipes may be formed inside the cooling plate (50) in a spiral or ring shape. The cooling fluid can cool the cooling plate (50) and the substrate (S). The cooling fluid may be a liquid or gaseous fluid. The cooling plate (50) may be made of a metal material such as titanium or stainless steel.

[0051] Meanwhile, the temperature of the cooling fluid flowing inside the cooling plate (50) may vary depending on the region of the cooling plate (50). Accordingly, when cooling the substrate (S) using only the cooling plate (50), there is a possibility that the cooling process will not be performed uniformly. According to the present disclosure, the cooling plate (50) uniformly cools the lower part of the substrate (S), and the diffuser (80) can uniformly cool the upper part of the substrate (S) by spraying the cooling gas supplied from the gas injection part (70) onto the upper surface of the substrate (S). Therefore, the cooling uniformity and cooling efficiency of the substrate (S) can be improved.

[0052] The lifting / lowering member (60) can support the cooling plate (50). The lifting / lowering member (60) can be raised and lowered so that the substrate (S) can rotate or move the substrate (S) up and down. For example, a driving device (65) may be coupled to the lifting / lowering member (60), and the lifting / lowering member (60) may be rotated or moved up and down by the driving device (65).

[0053] The gas injection unit (70) can supply cooling gas to the interior of the housing (40). An inert gas may be used as the cooling gas. The cooling gas may be nitrogen (N2) gas, preferably purified nitrogen (N2) gas. When purified nitrogen (N2) gas is used as the cooling gas, there is no need to regularly replace the filter that filters out impurities in ordinary air. Additionally, helium (He) gas may be used as the cooling gas. When helium gas is used, the cooling efficiency is higher because its thermal conductivity is higher than that of ordinary air. Additionally, air may be used as the cooling gas. The gas injection unit (70) may be connected to a gas storage unit (not shown) through a gas supply line. The gas injection unit (70) may be connected to the interior space of the diffuser (80) by penetrating a part of the upper wall (40b) of the housing (40). The gas injection unit (70) can be connected to at least one of the first and second supply units (P1, P2) shown in FIG. 1, for example.

[0054] A diffuser (80) may be positioned between a cooling plate (50) and a gas injection part (70). A diffuser (80) may be positioned between the upper wall (40b) of a housing (40) and the cooling plate (50). The diffuser (80) may include injection holes (H) formed on its surface. Specifically, the diffuser (80) may include a horizontal disc portion (81) and a support member (82), and injection holes (H) may be formed in the horizontal disc portion (81). The support member (82) is connected to the edge of the horizontal disc portion (81) and may be fixed to the upper wall (40b) of the housing (40) through a fastening structure (85). The support member (82) may be ring-shaped when viewed in a planar view. A seal member (88) may be positioned between the diffuser (80) and the housing (40). The sealing member (88) can seal the space between the support member (82) and the upper wall (40b) of the housing (40) from the interior space of the diffuser (80).

[0055] Increasing the flow rate of the cooling gas to increase the cooling speed of the substrate (S) results in a problem where the cooling uniformity of the substrate (S) is reduced. Additionally, if the cooling gas is supplied directly into the interior of the housing (40) through the gas injection unit (70), an increase in the flow rate of the cooling gas can cause various problems. For example, the substrate (S) may detach from the cooling plate (50), or the substrate (S) may be damaged due to the pressure caused by the increased flow rate of the cooling gas.

[0056] According to the present disclosure, by providing a diffuser (80), the problem described above can be solved because the cooling gas is not directly injected into the upper surface of the substrate (S). In addition, since the diffuser (80) reduces the speed of the supplied cooling gas, the flow rate of the cooling gas can be increased compared to the conventional method, thereby improving the cooling rate per second. Furthermore, since the diffuser (80) evenly distributes the cooling gas, the uniformity of cooling can be improved. That is, the cooling gas is injected through injection holes (H) formed in the diffuser, and since the injection holes (H) have a predetermined arrangement, the cooling gas can be uniformly supplied to the upper surface of the substrate (S).

[0057] The arrangement of the injection holes (H) of the diffuser (80) is illustrated exemplarily in FIGS. 3a and 3b. The injection holes (H) may be arranged spaced apart from each other in a concentric circle shape from the center (O) of the bottom surface (80B) of the diffuser (80). In other words, the injection holes (H) may be arranged in a shape that forms multiple circles (indicated by a dashed line) sharing a single center, and injection holes may not be arranged near the center adjacent to the center (O) of the bottom surface (80B) of the diffuser (80) (the inner region of the smallest of the multiple circles). The bottom surface (80B) may be provided by a horizontal disc portion (81). Meanwhile, the support member (82) of the diffuser (80) has fastening holes (86) for a fastening structure (85) formed spaced apart from each other along the perimeter of the support member (82).

[0058] The injection holes (H) may include first holes (H1) arranged along a first circumference (D1) having a first radius (r1) from the center (O), and second holes (H2) arranged along a second circumference (D2) having a second radius (r2) from the center (O). The second radius (r2) may be larger than the first radius (r1). The first holes (H1) may be arranged at equal intervals, and the second holes (H2) may be arranged at equal intervals. Additionally, the injection holes (H) may include third holes (H3) arranged along a third circumference (D3) having a third radius (r3) from the center (O). The third radius (r3) may be larger than the second radius (r2), and the third holes (H3) may also be arranged at equal intervals. The difference between the second radius (r2) and the third radius (r3) may be greater than the difference between the first radius (r1) and the second radius (r2).

[0059] The diffuser (80) shown in FIG. 3a may be installed in a facility where, for example, 200 nm and 300 nm wafers are processed, and the diffuser (80) shown in FIG. 3b may be installed in a facility where, for example, 150 nm and 200 nm wafers are processed. The diffuser (80) of FIG. 3b may have more spray holes (H) than the diffuser (80) of FIG. 3a.

[0060] The diameter of each injection hole (H) may be, for example, 1 mm or more, 3 mm or more, 5 mm or more, 7 mm or more, or 10 mm or more. The diameter of each injection hole (H) may be, for example, 30 mm or less, 27 mm or less, 25 mm or less, 23 mm or less, or 20 mm or less. Meanwhile, the size and arrangement of the injection holes (H) may be varied according to the embodiments.

[0061] By a predetermined arrangement of injection holes (H), the uniformity and cooling efficiency of the substrate cooling can be improved, and the warpage substrate can also ensure temperature uniformity. Below, the results of a temperature uniformity test experiment of the substrate according to whether or not a diffuser with injection holes (H) applied according to the present disclosure is provided will be described.

[0062] FIG. 4 illustrates graphs showing the process of cooling a substrate according to the experimental examples of the present disclosure. Table 1 below shows the experimental results for the process of cooling the substrate.

[0063]

[0064] [Table 1] is experimental result 1 of the substrate cooling process. Comparative example is a case where the substrate is cooled using a substrate processing system without a diffuser (refer to reference numeral '80' in FIG. 2), and experimental example 1 is a case where the substrate is cooled using a substrate processing system equipped with a diffuser (refer to reference numeral '80' in FIG. 2). In this experimental example, 'cooling time' refers to the time required to cool the substrate from 140°C to 60°C, and 'uniformity' refers to the difference between the maximum and minimum temperatures measured on the substrate when cooling the substrate. In this experimental example, a 300mm bare wafer was used as the substrate to be cooled (refer to reference numeral 'S' in FIG. 2).

[0065] In the case of the comparative example, it is confirmed that as the flow rate of the cooling gas increases, the cooling time decreases but the uniformity deteriorates. In contrast, in the case of Experimental Example 1, it is confirmed that as the flow rate of the cooling gas increases, the uniformity improves compared to the comparative example during a similar cooling time.

[0066] Meanwhile, in FIG. 4, the process of cooling the substrate of the comparative example (a) and the process of cooling the substrate of experimental example 1 (b) are respectively shown as graphs when the flow rate of the cooling gas is 50,000 sccm. Referring to FIG. 4, the horizontal axis in each graph represents the cooling time (seconds), and the vertical axis represents the temperature (°C) of the substrate. Compared to the case where the diffuser (80) of FIG. 2 is not provided, it is confirmed that the cooling uniformity of the substrate is significantly improved in the embodiment equipped with the diffuser (80).

[0067] Table 2 below shows different experimental results regarding the process of cooling the substrate. FIG. 5 illustrates graphs showing the process of cooling the substrate according to the experimental examples of the present disclosure.

[0068]

[0069] [Table 2] is experimental result 2 of the substrate cooling process. Experimental Example 2 is a case where the substrate is cooled using both a cooling plate (refer to reference numeral '50' in FIG. 2) and a diffuser (refer to reference numeral '80' in FIG. 2), and Experimental Example 3 is a case where the substrate is cooled using only the diffuser (80) without contact between the cooling plate (50) and the substrate. In this experimental example, 'cooling time' refers to the time required to cool the substrate from 160°C to 60°C, and 'uniformity' refers to the difference between the maximum and minimum temperatures measured on the substrate when cooling the substrate. In this experimental example, a 300mm Epoxy Molding Compound (EMC) warpage wafer (5mm smile) was used as the substrate to be cooled (refer to reference numeral 'S' in FIG. 2).

[0070] In the case of Experimental Example 2, the warpage wafer did not come into contact with all sides of the cooling plate (50), so the cooling efficiency was poor and the uniformity was poor. In contrast, in the case of Experimental Example 3, even though only the diffuser (80) was used instead of the cooling plate (50), it was confirmed that the cooling time was similar to that of Experimental Example 2 and the uniformity was improved. Accordingly, it is confirmed that increasing the amount of the diffuser (80) can improve the temperature uniformity when cooling the warpage wafer compared to the cooling plate (50).

[0071] Meanwhile, in FIG. 5, the process of cooling the substrate of Experimental Example 2 (a) and the process of cooling the substrate of Experimental Example 3 (b) are each illustrated as graphs. Referring to FIG. 5, the horizontal axis in each graph represents the cooling time (seconds), and the vertical axis represents the temperature (°C) of the substrate. As described above, it is confirmed that increasing the usage of the diffuser (80) can improve the uniformity of the warpage wafer relative to the cooling plate (50).

[0072]

[0073] The above descriptions are specific embodiments for carrying out the present disclosure. The present disclosure will include not only the embodiments described above, but also embodiments that can be simply modified or easily modified. Furthermore, the present disclosure will include technologies that can be easily modified and implemented using the embodiments described above. Accordingly, the scope of the present disclosure should not be limited to the embodiments described above, but should be defined by the claims set forth below as well as equivalents to the claims of the present disclosure.

Claims

1. A substrate processing apparatus comprising a cooling module for cooling a substrate after heat treatment, A cooling plate that supports the substrate in the internal space of the cooling module; A gas injection unit for supplying cooling gas into the internal space of the above cooling module; and It includes a diffuser having injection holes disposed between the cooling plate and the gas injection part and uniformly supplying the cooling gas to the upper part of the substrate. A substrate processing device in which the above injection holes are arranged spaced apart from each other in a concentric circle shape from the center of the bottom surface of the diffuser.

2. In Paragraph 1, The injection holes include first holes arranged along a first circumference having a first radius from the center and second holes arranged along a second circumference having a second radius from the center. A substrate processing device in which the second radius is larger than the first radius.

3. In Paragraph 2, The first holes are arranged at equal intervals on the first circumference, and The above second holes are arranged at equal intervals on the above second circumference in a substrate processing device.

4. In Paragraph 1, The above diffuser includes a horizontal disc portion on which the injection holes are arranged and a support member connected to the edge of the horizontal disc portion, The above gas injection part is a substrate processing device that communicates with the internal space enclosed by the horizontal disc part of the diffuser and the support member.

5. In Paragraph 1, A passage is provided inside the cooling plate through which a cooling fluid for cooling the substrate circulates, and A substrate processing device further comprising a lifting and lowering member for moving the above cooling plate up and down.

6. In Paragraph 1, A substrate processing device in which the above cooling gas is purified nitrogen gas.

7. A heating module for performing a reflow process on a substrate; and It includes the heating module and a cooling module disposed within a single chamber for cooling the heat-treated substrate, and The above cooling module is equipped with a cooling plate for mounting the substrate, a gas injection unit for supplying a cooling gas to cool the substrate, and a diffuser disposed between the cooling plate and the gas injection unit. The above diffuser has injection holes formed therein for uniformly supplying the cooling gas to the upper surface of the substrate, and A substrate processing device in which the above injection holes are arranged spaced apart from each other in a concentric circle shape from the center of the bottom surface of the diffuser.

8. In Paragraph 7, The above diffuser is a substrate processing device comprising a horizontal disc portion on which the injection holes are arranged and a support member connected to the edge of the horizontal disc portion.

9. In Paragraph 8, It further includes a housing that partitions the internal space of the above-mentioned cooling module, and The support member of the above diffuser is a substrate processing device fixed to the upper wall of the housing.

10. In Paragraph 7, A substrate processing device in which the injection holes are not placed in the inner region of the circle having the minimum radius among the circles forming the above concentric circles.

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