Power module packaging structure, power module, motor controller and vehicle

Abstract

The present application provides a power module packaging structure, a power module, a motor controller and a vehicle. The power module packaging structure is configured to connect and package a chip substrate layer and an encapsulation layer, and comprises a barrier layer and an enhancement layer; the barrier layer is coated on the periphery of the chip substrate layer, and is configured to prevent moisture from infiltrating into the chip substrate layer; the enhancement layer is coated on the periphery of the barrier layer, and is configured to enhance the adhesion between the encapsulation layer and the chip substrate layer. The barrier layer can prevent external moisture from infiltrating into the chip substrate layer, avoiding moisture infiltrating into the chip substrate layer via a bonding layer made of a silane coupling agent, thereby preventing the chip substrate layer from being easily oxidized and corroded to form an oxidized separation layer. In addition, with respect to the packaging structure, the adhesion between the encapsulation layer and the chip substrate layer is further enhanced by means of the enhancement layer, such that the encapsulation layer exhibits enhanced adhesion to the chip substrate layer, thereby avoiding a case in which the encapsulation layer and chip substrate layer are prone to delamination at high junction temperature.

Description

A power module packaging structure, a power module, a motor controller and a vehicle

[0001] The present application claims priority to the Chinese patent application No. 202411353760.0, filed on September 25, 2024, and entitled "A power module packaging structure, a power module, a motor controller and a vehicle", the whole content of which is incorporated herein by reference. TECHNICAL FIELD

[0002] The present application belongs to the technical field of vehicles, and in particular relates to a power module packaging structure, a power module, a motor controller and a vehicle. BACKGROUND

[0003] The power module is a whole module combined and packaged by electronic functional devices, used for realizing the conversion between direct current and alternating current, and has the advantages of small size and high power density, and is widely used in the field of new energy vehicles.

[0004] In the prior art, the power module usually includes a chip substrate layer, a bonding layer and a plastic encapsulation layer, and the bonding layer is connected between the chip substrate layer and the plastic encapsulation layer. The silane coupling agent can be usually used as the bonding layer to make the bonding force between the plastic encapsulation layer and the chip substrate layer better, so as to prevent the delamination phenomenon.

[0005] However, it is found in the process of studying the prior art that in the case of high junction temperature (for example, 200 degrees Celsius), the water vapor in the outside world is easy to penetrate into the chip substrate layer through the bonding layer made of the silane coupling agent, reduces the bonding force of the silane coupling agent on the plastic encapsulation layer and the chip substrate layer, makes the chip substrate layer easy to be oxidized and corroded, generates an oxidation separation layer, and causes the power module to have the delamination phenomenon. SUMMARY

[0006] In view of the above problems, the present application is proposed in order to provide a power module packaging structure, a power module, a motor controller and a vehicle which can overcome the above problems or at least partially solve the above problems.

[0007] In order to solve the above technical problems, the present application is implemented as follows:

[0008] In a first aspect, the embodiments of the present application propose a power module packaging structure for connecting to a packaged chip substrate layer and a plastic encapsulation layer, comprising: a barrier layer and a reinforcing layer.

[0009] The barrier layer is wrapped around the outer periphery of the chip substrate layer, and the barrier layer is used to isolate the water vapor from penetrating into the chip substrate layer.

[0010] The reinforcing layer is wrapped around the outer periphery of the barrier layer, and the reinforcing layer is used to enhance the bonding force between the plastic encapsulation layer and the chip substrate layer.

[0011] Optionally, the barrier layer is a ceramic barrier layer or a metal barrier layer.

[0012] Optionally, the ceramic barrier layer is made of one of HfO2, TiO2 or Ta2O5.

[0013] Optionally, the metal barrier layer is made of one of Ag or Au.

[0014] Optionally, the barrier layer has a thickness of any value in the range of 10-500 nm.

[0015] Optionally, the barrier layer is made by atomic layer deposition, chemical vapor deposition, physical vapor deposition or plasma spraying.

[0016] Optionally, the power module packaging structure further comprises an insulation layer, which is connected between the barrier layer and the enhancement layer.

[0017] Optionally, the insulation layer is a ceramic insulation layer or a polymer insulation layer.

[0018] Optionally, the ceramic insulation layer is made of one of Al2O3 or TiO2.

[0019] Optionally, the polymer insulation layer is made of one of polyimide or silane.

[0020] Optionally, the insulation layer has a thickness of any value in the range of 10-500 nm.

[0021] Optionally, the insulation layer is made by atomic layer deposition, chemical vapor deposition, physical vapor deposition or plasma spraying.

[0022] In a second aspect, an embodiment of the present application provides a power module, which comprises a chip substrate layer, a plastic encapsulation layer and the power module packaging structure.

[0023] The power module packaging structure is connected between the chip substrate layer and the plastic encapsulation layer.

[0024] In a third aspect, an embodiment of the present application provides a motor controller, which comprises the power module.

[0025] In a fourth aspect, an embodiment of the present application provides an electric drive system, which comprises the motor controller.

[0026] In a fifth aspect, an embodiment of the present application provides a vehicle, which comprises the motor controller or the electric drive system.

[0027] In the embodiment of the present application, the power module packaging structure is used for connecting the packaging chip substrate layer and the plastic packaging layer, and the power module packaging structure comprises: a barrier layer and a reinforcing layer; the barrier layer is wrapped around the outer periphery of the chip substrate layer, and the barrier layer is used for preventing water vapor from penetrating into the chip substrate layer; the reinforcing layer is wrapped around the outer periphery of the barrier layer, and the reinforcing layer is used for enhancing the bonding force between the plastic packaging layer and the chip substrate layer. In this way, when water vapor is generated under high junction temperature, the barrier layer can prevent external water vapor from penetrating into the chip substrate layer, avoid the water vapor penetrating into the chip substrate layer through the bonding layer made of silane coupling agent, and avoid the chip substrate layer being easily oxidized and corroded to form an oxidation separation layer. In addition, the reinforcing layer further enhances the bonding force between the plastic packaging layer and the chip substrate layer, so that the plastic packaging layer has a good adhesion enhancement effect on the chip substrate layer, and the plastic packaging layer and the chip substrate layer are prevented from being easily separated under high junction temperature.

[0028] Additional aspects and advantages of the application will be set forth in part in the description which follows, and in part will become apparent to those skilled in the art upon examination of the following and / or can be learned by practice of the application.

[0029] The above description is only a summary of the technical solutions of the present application. In order to more clearly understand the technical means of the present application, the following specific embodiments of the present application can be implemented according to the content of the description, and in order to make the above and other purposes, characteristics and advantages of the present application more obvious and easy to understand, the following specific embodiments of the present application are described. BRIEF DESCRIPTION OF DRAWINGS

[0030] The above and / or additional aspects and advantages of the present application will become apparent and more readily appreciated from the following description of the embodiments, taken in conjunction with the accompanying drawings in which:

[0031] Fig. 1 is a structural schematic diagram of a power module packaging structure applied to a power module according to an embodiment of the present application;

[0032] Fig. 2 is an enlarged structural schematic diagram of circle A in Fig. 1 of a power module packaging structure according to an embodiment of the present application.

[0033] Reference signs: 10-barrier layer; 20-reinforcing layer; 30-insulating layer; 41-chip; 42-substrate layer. DETAILED DESCRIPTION

[0034] The technical solutions of the present application will be further described below in conjunction with the drawings and through specific embodiments.

[0035] Embodiments of the present application will be described in detail below, examples of which are shown in the drawings, wherein the same or similar notations represent the same or similar elements or elements having the same or similar functions throughout. The embodiments described below by referring to the drawings are exemplary only, for the purpose of explanation, and are not to be understood as a limitation of the present application. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative work under the premise that the scope of protection of the present application.

[0036] The terms "first", "second" in the description and claims of the present application can explicitly or implicitly include one or more of the features. In the description of the present application, unless otherwise specified, the meaning of "a plurality of" is two or more. In addition, "and / or" in the specification and claims means at least one of the connected objects, and the character " / ", generally indicates that the front and rear associated objects are in a "or" relationship.

[0037] In the description of the present application, it should be understood that the terms "center", "longitudinal", "transverse", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential" and the like indicate the orientation or positional relationship based on the orientation or positional relationship shown in the drawings, and are only for the purpose of facilitating the description of the present application and simplifying the description, and do not indicate or imply that the device or element referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore cannot be understood as a limitation of the present application.

[0038] In the description of the present application, it should be noted that unless otherwise specified and limited, the terms "mounting", "connecting", "connecting" should be understood broadly, for example, it can be fixedly connected, or it can be detachably connected, or integrally connected; it can be mechanically connected, or it can be electrically connected; it can be directly connected, or it can be indirectly connected through an intermediate medium, or it can be the communication between two elements. For those skilled in the art, the specific meaning of the above terms in the present application can be understood according to the specific circumstances.

[0039] Referring to FIGS. 1-2, a structure diagram of a power module packaging structure and its application in a power module are shown. The power module packaging structure is used to connect to a packaging chip substrate layer and a plastic packaging layer (not shown in the figure). The power module packaging structure can specifically include: a barrier layer 10 and a reinforcing layer 20. The barrier layer 10 covers the outer periphery of the chip substrate layer. The barrier layer 10 is used to isolate water vapor from penetrating into the chip substrate layer. The reinforcing layer 20 covers the outer periphery of the barrier layer 10. The reinforcing layer 20 is used to enhance the bonding force between the plastic packaging layer and the chip substrate layer.

[0040] In the embodiments of the present application, when water vapor is generated under high junction temperature conditions, the barrier layer 10 can block external water vapor from penetrating into the chip substrate layer, avoiding water vapor from penetrating into the chip substrate layer through the bonding layer made of silane coupling agent, and avoiding the chip substrate layer from being easily oxidized and corroded to generate an oxidized separation layer. In addition, the reinforcing layer 20 further enhances the bonding force between the plastic packaging layer and the chip substrate layer of the packaging structure, so that the plastic packaging layer has a good adhesion enhancement effect on the chip substrate layer, and avoids the plastic packaging layer and the chip substrate layer from being easily delaminated under high junction temperature conditions.

[0041] In related technologies, the junction temperature of the power module of the vehicle-mounted inverter of a vehicle, that is, the highest temperature at which the chip substrate layer of the power module is stably operated, is 175 degrees Celsius. As the performance requirements of vehicles increase, it is an important trend for future development of plastic-encapsulated power modules to meet the high junction temperature requirements of chip substrate layers. High junction temperature refers to a temperature greater than 175 degrees Celsius, which can typically be 200 degrees Celsius, and can also be 180 degrees Celsius, 190 degrees Celsius, or 210 degrees Celsius, etc. The specific temperature value of the high junction temperature in the embodiments of the present application can not be limited.

[0042] However, the plastic-encapsulated power module has a problem of easy delamination of the plastic packaging layer under high junction temperature. Specifically, under high junction temperature, the plastic packaging layer absorbs water vapor and the diffusion speed of water vapor is faster. When water vapor penetrates through the plastic packaging layer to reach the chip substrate layer or the surface of the chip substrate layer, it will cause oxidation and corrosion under high temperature and high humidity conditions, forming an oxide layer, such as copper oxide. Even the water vapor oxidation and corrosion destroys the isolation layer of the outer periphery of the chip substrate layer, such as polyimide or Si3N4, etc., which easily leads to delamination between the chip substrate layer and the plastic packaging layer, resulting in insulation failure. Therefore, the barrier layer 10 and the reinforcing layer 20 are sequentially arranged on the outer periphery of the chip substrate layer in the present application. The barrier layer 10 blocks external water vapor from penetrating into the chip substrate layer, avoiding the chip substrate layer from being easily oxidized and corroded to generate an oxidized separation layer. In addition, the reinforcing layer 20 further enhances the bonding force between the plastic packaging layer and the chip substrate layer of the packaging structure, so that the plastic packaging layer has a good adhesion enhancement effect on the chip substrate layer, and more effectively avoids the plastic packaging layer and the chip substrate layer from being easily delaminated under high junction temperature conditions.

[0043] In an example, in the embodiment of the present application, the reinforcing layer 20 can adopt silane such as silane coupling agent, or polyimide type coating layer formation, that is, the material of the reinforcing layer 20 can be silane or polyimide, which has a good adhesion enhancement effect on the plastic encapsulation layer and the chip substrate layer. The specific material of the reinforcing layer 20 in the embodiment of the present application can not be limited, and can be set according to actual needs.

[0044] Optionally, in the embodiment of the present application, the barrier layer 10 is a ceramic barrier layer or a metal barrier layer. In an example, the barrier layer 10 generally needs to meet good insulation, good bonding force with the surface of the chip substrate layer, high temperature stability, and the ability to block the diffusion of water vapor at high temperature. Therefore, ceramic material can be used as the barrier layer 10 to meet the above characteristic requirements and achieve good barrier effect on water vapor. In addition, metal material can also be used as the barrier layer 10, which can also meet the above characteristic requirements and achieve good barrier effect on water vapor.

[0045] In the embodiment of the present application, optionally, the material of the ceramic barrier layer is one of HfO2 (hafnium dioxide), TiO2 (titanium dioxide) or Ta2O5 (diantimony pentoxide). That is, HfO2 can be used as the ceramic barrier layer, TiO2 can be used as the ceramic barrier layer, and Ta2O5 can be used as the ceramic barrier layer. In addition, other ceramic materials that meet the requirements of the barrier layer 10 can also be used as the ceramic barrier layer, which can be set according to actual needs. The specific material of the ceramic barrier layer in the embodiment of the present application can not be limited.

[0046] Optionally, in the embodiment of the present application, the material of the metal barrier layer is one of Ag (silver) or Au (gold). That is, Ag can be used as the metal barrier layer, and Au can be used as the metal barrier layer. In addition, other metal materials that meet the requirements of the barrier layer 10 can also be used as the metal barrier layer, which can be set according to actual needs. The specific material of the metal barrier layer in the embodiment of the present application can not be limited.

[0047] In the embodiment of the present application, optionally, the thickness of the barrier layer 10 is any value in 10-500nm. In this way, it is avoided that the barrier layer 10 which is too thin is easy to have lattice defects leading to water vapor intrusion, and it is also avoided that the barrier layer 10 which is too thick is brittle and easy to have large difference in CTE (Coefficient of Thermal Expansion) with copper and other materials, which easily leads to cracking of the power module packaging structure and the plastic encapsulation layer under thermal stress, resulting in insulation failure.

[0048] For example, the thickness of the barrier layer 10 can be 10 nm, 50 nm, 130 nm, 300 nm, or 500 nm, etc., which can be set according to actual needs. The specific material of the barrier layer 10 is not limited in the embodiments of the present application.

[0049] Optionally, in the embodiments of the present application, the barrier layer 10 is made by using an atomic layer deposition (ALD) process, a chemical vapor deposition (CVD) process, or a physical vapor deposition (PVD) process. In the embodiments of the present application, the atomic layer deposition process can be used to deposit the barrier layer 10. The process can achieve a relatively dense coating and uniform coverage of the coating, so that the barrier layer 10 has a good coating effect in the recesses, gaps, and other areas on the surface of the chip substrate layer. In addition, the barrier layer 10 can also be made by using a chemical vapor deposition process, a physical vapor deposition process, or a plasma spraying process. The above processes are relatively mature and have good implementability.

[0050] In some other optional embodiments of the present application, the power module packaging structure can further include an insulating layer 30 connected between the barrier layer 10 and the reinforcing layer 20. That is, after the barrier layer 10 is sprayed, the insulating layer 30 is sprayed on the barrier layer 10. In this way, the creepage distance on the chip substrate layer can be effectively reduced. Since the insulating layer 30 has good insulation, the creepage distance can be reduced when the chip substrate layer is arranged, thereby improving the flexibility of design and even reducing the size and power density of the power module.

[0051] Optionally, in the embodiments of the present application, the insulating layer 30 is a ceramic insulating layer or a polymer insulating layer. That is, a ceramic material can be used as the ceramic insulating layer to achieve good insulation of the chip substrate layer. In addition, a metal material can also be used as the ceramic insulating layer, which can also achieve good insulation of the chip substrate layer.

[0052] In the embodiments of the present application, the material of the ceramic insulating layer can be Al2O3 (aluminum oxide) or TiO2, which can be set according to actual needs. The specific material of the ceramic insulating layer is not limited in the embodiments of the present application.

[0053] Optionally, in the embodiment of the present application, the material of the high polymer insulation layer is one of polyimide or silane. That is, polyimide can be used as the high polymer insulation layer, and Au can also be used as the high polymer insulation layer. In addition, other metal materials meeting the requirements of the barrier layer 10 can also be used as the high polymer insulation layer, which can be set according to actual needs, and the specific material of the high polymer insulation layer in the embodiment of the present application can not be limited.

[0054] In the embodiment of the present application, the thickness of the insulation layer 30 is any value in 10-500nm. In this way, it is avoided that the thin insulation layer 30 is easy to have lattice defects, leading to water vapor intrusion, and it is also avoided that the too thick insulation layer 30 is brittle and easy to have a large difference in CTE with copper and other materials, leading to cracking of the power module packaging structure and the plastic encapsulation layer under thermal stress, resulting in insulation failure.

[0055] For example, the thickness of the insulation layer 30 can be 10nm, 50nm, 130nm, 300nm or 500nm, etc., which can be set according to actual needs, and the specific material of the insulation layer 30 in the embodiment of the present application can not be limited.

[0056] Optionally, in the embodiment of the present application, the insulation layer 30 is made by atomic layer deposition process, chemical vapor deposition process, physical vapor deposition process or plasma spraying process. In the embodiment of the present application, the atomic layer deposition process can be used to realize the plating deposition of the insulation layer 30. This process can realize a relatively dense plating layer and realize uniform coverage of the plating layer, so that the insulation layer 30 has a good plating effect on the positions corresponding to the grooves, gaps and other areas on the surface of the chip substrate layer on the barrier layer 10. In addition, the chemical vapor deposition process, the physical vapor deposition process or the plasma spraying process can also be used to make the insulation layer 30. The above processes are relatively mature and have good implementability.

[0057] In summary, the power module packaging structure in the embodiment of the present application can at least have the following advantages:

[0058] In the embodiment of the present application, the power module packaging structure is used for connecting the packaging chip substrate layer and the plastic packaging layer, and the power module packaging structure comprises: a barrier layer and a reinforcing layer; the barrier layer is wrapped around the outer periphery of the chip substrate layer, and the barrier layer is used for preventing water vapor from penetrating into the chip substrate layer; and the reinforcing layer is wrapped around the outer periphery of the barrier layer, and the reinforcing layer is used for enhancing the bonding force between the plastic packaging layer and the chip substrate layer. In this way, when water vapor is generated under high junction temperature, the barrier layer can prevent external water vapor from penetrating into the chip substrate layer, avoid the water vapor penetrating into the chip substrate layer through the bonding layer made of silane coupling agent, and avoid the chip substrate layer being easily oxidized and corroded to form an oxidation separation layer. In addition, the reinforcing layer further enhances the bonding force between the plastic packaging layer and the chip substrate layer, so that the plastic packaging layer has a good adhesion enhancement effect on the chip substrate layer, and the plastic packaging layer and the chip substrate layer are prevented from being easily delaminated under high junction temperature.

[0059] The embodiment of the present application also provides a power module, which comprises a chip substrate layer, a plastic packaging layer and the power module packaging structure; and the power module packaging structure is connected between the chip substrate layer and the plastic packaging layer. For example, the plastic packaging material can be wrapped around the outer periphery of the reinforcing layer 20 of the power module packaging structure to form the plastic packaging layer.

[0060] Specifically, in the embodiment of the present application, the chip substrate layer can comprise a substrate layer 42 and a chip 41, and the chip 41 is connected to the substrate layer 42. For example, the substrate layer 42 can be an AMB (Active Metal Brazing, active metal brazing) ceramic substrate, and the chip 41 can be fixedly connected to the substrate layer 42 by sintering, welding or the like. The number of chips 41 can be two, for example, a first chip and a second chip, and the first chip and the second chip are spaced apart and connected to the substrate layer 42. The first chip can be a high-voltage chip, for example, a 1200-v high-voltage chip, and the second chip can be a low-voltage chip, for example, a 0-v low-voltage chip. The specific voltage value of the first chip and the second chip in the embodiment of the present application can not be limited, and can be set according to actual needs.

[0061] In the related art, the first chip and the second chip are usually arranged to form a groove-shaped gap, so that the first chip and the second chip have an effective creepage distance. However, in the embodiment of the present application, the insulating layer 30 is arranged between the barrier layer 10 and the reinforcing layer 20, so as to reduce the gap between the first chip and the second chip and reduce the size of the groove, thereby improving the design flexibility, reducing the size and power density of the power module, and facilitating the miniaturization of the product.

[0062] In conclusion, the power module described in the embodiments of the present application can at least include the following advantages:

[0063] In the embodiments of the present application, the power module includes a chip substrate layer, a plastic sealing layer, and the power module packaging structure; the power module packaging structure is connected between the chip substrate layer and the plastic sealing layer, and is used to connect the packaged chip substrate layer and the plastic sealing layer; the power module packaging structure includes a barrier layer and a reinforcing layer; the barrier layer covers the outer periphery of the chip substrate layer, and is used to isolate water vapor from penetrating into the chip substrate layer; and the reinforcing layer covers the outer periphery of the barrier layer, and is used to enhance the bonding force between the plastic sealing layer and the chip substrate layer. In this way, when water vapor is generated under high junction temperature, the barrier layer can block the penetration of external water vapor into the chip substrate layer, avoid the penetration of water vapor through the bonding layer made of silane coupling agent into the chip substrate layer, and avoid the oxidation and corrosion of the chip substrate layer to generate an oxidation separation layer. In addition, the reinforcing layer further enhances the bonding force between the plastic sealing layer and the chip substrate layer of the packaging structure, so that the plastic sealing layer has a good adhesion enhancement effect on the chip substrate layer, and avoids the delamination of the plastic sealing layer and the chip substrate layer under high junction temperature.

[0064] The embodiments of the present application also propose a motor controller, which includes the power module.

[0065] The motor controller described in the embodiments of the present application can at least include the following advantages:

[0066] In the embodiments of the present application, the motor controller includes the power module, which includes a chip substrate layer, a plastic sealing layer, and the power module packaging structure; the power module packaging structure is connected between the chip substrate layer and the plastic sealing layer, and is used to connect the packaged chip substrate layer and the plastic sealing layer; the power module packaging structure includes a barrier layer and a reinforcing layer; the barrier layer covers the outer periphery of the chip substrate layer, and is used to isolate water vapor from penetrating into the chip substrate layer; and the reinforcing layer covers the outer periphery of the barrier layer, and is used to enhance the bonding force between the plastic sealing layer and the chip substrate layer. In this way, when water vapor is generated under high junction temperature, the barrier layer can block the penetration of external water vapor into the chip substrate layer, avoid the penetration of water vapor through the bonding layer made of silane coupling agent into the chip substrate layer, and avoid the oxidation and corrosion of the chip substrate layer to generate an oxidation separation layer. In addition, the reinforcing layer further enhances the bonding force between the plastic sealing layer and the chip substrate layer of the packaging structure, so that the plastic sealing layer has a good adhesion enhancement effect on the chip substrate layer, and avoids the delamination of the plastic sealing layer and the chip substrate layer under high junction temperature.

[0067] The embodiment of the present application further provides an electric drive system, which comprises the motor controller as described in the foregoing embodiment.

[0068] The electric drive system as described in the embodiment of the present application can at least have the following advantages:

[0069] In the embodiment of the present application, the electric drive system comprises the motor controller as described in the foregoing embodiment, the motor controller comprises the power module as described in any one of the foregoing embodiments, the power module comprises a chip substrate layer, a plastic encapsulation layer and the power module packaging structure; the power module packaging structure is connected between the chip substrate layer and the plastic encapsulation layer, the power module packaging structure is used for connecting the encapsulation chip substrate layer and the plastic encapsulation layer, and the power module packaging structure comprises a barrier layer and a reinforcing layer; the barrier layer is wrapped around the outer periphery of the chip substrate layer, and the barrier layer is used for isolating water vapor from penetrating into the chip substrate layer; and the reinforcing layer is wrapped around the outer periphery of the barrier layer, and the reinforcing layer is used for enhancing the bonding force between the plastic encapsulation layer and the chip substrate layer. In this way, when water vapor is generated under high junction temperature, the barrier layer can block the water vapor from the outside from penetrating into the chip substrate layer, avoid the water vapor from penetrating into the chip substrate layer through the bonding layer made of silane coupling agent, and avoid the chip substrate layer from being easily oxidized and corroded to generate an oxidation separation layer. In addition, the reinforcing layer further enhances the bonding force between the packaging structure plastic encapsulation layer and the chip substrate layer, so that the plastic encapsulation layer has a good adhesion enhancement effect on the chip substrate layer, and the plastic encapsulation layer and the chip substrate layer are prevented from being easily delaminated under high junction temperature.

[0070] The embodiment of the present application further provides a vehicle, which comprises the motor controller or the electric drive system.

[0071] For example, in the embodiment of the present application, the vehicle can include a small car, a medium car, a three-door car, a truck, a trailer, a CDV (Car Derived Van, a van based on a car platform), an MPV (multi-Purpose Vehicles, a multi-purpose vehicle), an SUV (Sport Utility Vehicles, a sport utility vehicle) and the like. The specific type of the vehicle is not limited in the embodiment of the present application.

[0072] The vehicle as described in the embodiment of the present application can at least have the following advantages:

[0073] In the embodiments of the present application, the vehicle comprises the motor controller, the motor controller comprises the power module, or the vehicle comprises the electric drive system, the electric drive system comprises the motor controller, and the motor controller comprises the power module. The power module comprises a chip substrate layer, a plastic encapsulation layer, and the power module encapsulation structure; the power module encapsulation structure is connected between the chip substrate layer and the plastic encapsulation layer, and is used for connecting the encapsulation chip substrate layer and the plastic encapsulation layer. The power module encapsulation structure comprises a barrier layer and a reinforcing layer; the barrier layer is wrapped around the outer periphery of the chip substrate layer, and is used for preventing water vapor from penetrating into the chip substrate layer; and the reinforcing layer is wrapped around the outer periphery of the barrier layer, and is used for enhancing the bonding force between the plastic encapsulation layer and the chip substrate layer. In this way, when water vapor is generated under high junction temperature, the barrier layer can prevent external water vapor from penetrating into the chip substrate layer, avoid the water vapor from penetrating into the chip substrate layer through the bonding layer made of silane coupling agent, and avoid the chip substrate layer from being easily oxidized and corroded to generate an oxidation separation layer. In addition, the reinforcing layer further enhances the bonding force between the encapsulation structure plastic encapsulation layer and the chip substrate layer, so that the plastic encapsulation layer has a good adhesion enhancement effect on the chip substrate layer, and avoids the plastic encapsulation layer and the chip substrate layer from being easily delaminated under high junction temperature.

[0074] In the description of the present specification, the description of the terms "one embodiment", "some embodiments", "exemplary embodiment", "example", "specific example", or "some examples" means that the specific features, structures, materials or characteristics described in connection with the embodiment or example are included in at least one embodiment or example of the present application. In the present specification, the exemplary description of the above terms does not necessarily mean the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described can be combined in any one or more embodiments or examples in a suitable manner.

[0075] Although the embodiments of the present application have been shown and described, those skilled in the art can understand that various changes, modifications, replacements and variations can be made to the embodiments without departing from the principles and purposes of the present application, and the scope of the present application is defined by the claims and their equivalents.

[0076] Obviously, the above-described embodiments of the present application are only examples for clearly illustrating the present application, and are not intended to limit the implementation manners of the present application. Based on the above description, other different forms of changes or variations can be made by those skilled in the art. Here, it is not necessary and impossible to enumerate all the implementation manners. Any modification, equivalent replacement and improvement made within the spirit and principle of the present application shall be included in the protection scope of the claims of the present application.

[0077] Finally, it should be noted that the above examples are only used to illustrate the technical solutions of the present application, and are not intended to limit the same; although the present application has been described in detail with reference to the foregoing examples, those of ordinary skill in the art should understand that they can still modify the technical solutions recorded in the foregoing examples, or make equivalent replacements for some of the technical features; and these modifications or replacements do not make the essence of the corresponding technical solutions deviate from the spirit and scope of the technical solutions of the embodiments of the present application.

Claims

1. A power module package structure for connecting to a package chip substrate layer and a plastic package layer, characterized by, The power module packaging structure comprises a barrier layer (10); The barrier layer (10) is coated on the outer periphery of the chip substrate layer, and is used to isolate water vapor from penetrating into the chip substrate layer.

2. The power module package structure of claim 1, wherein, The power module packaging structure further comprises a reinforcing layer (20); The reinforcing layer (20) is coated on the outer periphery of the barrier layer (10), and is used to enhance the bonding force between the plastic packaging layer and the chip substrate layer.

3. The power module package structure according to claim 1 or 2, characterized in that, The barrier layer (10) is a ceramic barrier layer or a metal barrier layer.

4. The power module package structure of claim 3, wherein, The ceramic barrier layer is made of one of HfO2, TiO2 or Ta2O5.

5. The power module package structure of claim 3, wherein, The metal barrier layer is made of one of Ag or Au.

6. The power module package structure according to any one of claims 1 to 5, characterized in that, The thickness of the barrier layer (10) is any value in the range of 10-500 nm.

7. The power module package structure according to any one of claims 1 to 6, characterized in that, The barrier layer (10) is made by atomic layer deposition process, chemical vapor deposition process, physical vapor deposition process or plasma spraying process.

8. The power module package structure of claim 2, wherein, The power module packaging structure further comprises an insulating layer (30) connected between the barrier layer (10) and the reinforcing layer (20).

9. The power module package structure of claim 8, wherein, The insulating layer (30) is a ceramic insulating layer or a high polymer insulating layer.

10. The power module package structure of claim 9, wherein, The ceramic insulating layer is made of one of Al2O3 or TiO2.

11. The power module package structure according to claim 9 or 10, characterized in that, The high polymer insulating layer is made of one of polyimide or silane.

12. The power module package structure of any one of claims 8-11, wherein, The thickness of the insulating layer (30) is any value in the range of 10-500 nm.

13. The power module package structure of any one of claims 8-11, wherein, The insulating layer (30) is made by atomic layer deposition process, chemical vapor deposition process, physical vapor deposition process or plasma spraying process.

14. A power module, characterized by The power module comprises a chip substrate layer, a plastic packaging layer and the power module packaging structure according to any one of claims 1-13. The power module packaging structure is connected between the chip substrate layer and the plastic packaging layer.

15. An electric machine controller characterized by The motor controller comprises the power module according to claim 14.

16. An electric drive system comprising the motor controller according to claim 15.

17. A vehicle characterized by comprising: The vehicle comprises the motor controller according to claim 15 or the electric drive system according to claim 16.

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