Substrate processing method, method for manufacturing semiconductor device, program, and substrate processing apparatus

Abstract

The present invention comprises: a) a step for supplying a processing gas to a substrate at a first pressure via a first gas supply system having a first storage part; b) a step for supplying the processing gas to the substrate at a second pressure, which is lower than the first pressure, via a second gas supply system having a second storage part; and c) a step for performing the step b) after the step a).

Description

Substrate processing method, semiconductor device manufacturing method, program, and substrate processing apparatus.

[0001] This disclosure relates to a substrate processing method, a semiconductor device manufacturing method, a program, and a substrate processing apparatus.

[0002] As part of the substrate processing process (manufacturing process for semiconductor devices), a process of forming a film on the substrate is sometimes performed (see, for example, Japanese Patent Publication No. 2022-052622).

[0003] This disclosure provides a technology capable of improving the step coverage of a film formed on a substrate.

[0004] According to one aspect of the present disclosure, a technology is provided that includes the steps of: a) supplying a processing gas to a substrate at a first pressure via a first gas supply system having a first storage unit; b) supplying the processing gas to the substrate at a second pressure lower than the first pressure via a second gas supply system having a second storage unit; and c) performing b) after a).

[0005] According to this disclosure, it is possible to improve the step coverage of a film formed on a substrate.

[0006] Figure 1 is a schematic diagram of the vertical processing furnace of the substrate processing apparatus, showing the processing furnace 202 portion in a vertical cross-sectional view. Figure 2 is a schematic diagram of the gas supply system. Figure 3 is a schematic diagram of the vertical processing furnace of the substrate processing apparatus, showing the processing furnace 202 portion in a cross-sectional view along line A-A in Figure 1. Figure 4 is a schematic diagram of the controller 121 of the substrate processing apparatus, showing the control system of the controller 121 in a block diagram. Figure 5 is a diagram showing the processing sequence in one embodiment, showing the supply timing of the first processing gas, second processing gas, and inert gas. Figure 6 is a diagram showing another pattern of the supply sequence of the first processing gas within the processing sequence in one embodiment. Figure 7 is a diagram showing another pattern of the processing sequence in one embodiment. Figure 8 is a diagram showing another pattern of the processing sequence in one embodiment. Figure 9 is a diagram showing another pattern of the processing sequence in one embodiment. Figure 10 is a diagram showing the processing sequence in a modified example.

[0007] <An Embodiment of the Disclosure> An embodiment of the disclosure will be described below, mainly with reference to Figures 1 to 9. Note that the drawings used in the following description are schematic, and the dimensional relationships and proportions of the elements shown in the drawings do not necessarily correspond to reality. Furthermore, the dimensional relationships and proportions of the elements do not necessarily correspond between multiple drawings.

[0008] (1) As shown in the configuration diagram 1 of the substrate processing apparatus, the processing furnace 202 has a heater 207 as a temperature regulator (heating unit). The heater 207 is cylindrical and is mounted vertically by being supported by a holding plate. The heater 207 also functions as an activation mechanism that activates the gas with heat.

[0009] A reaction tube 203 is arranged inside the heater 207, concentrically with the heater 207. The reaction tube 203 is made of a heat-resistant material such as quartz or silicon carbide (SiC), and is formed in a cylindrical shape with a closed upper end and an open lower end. Below the reaction tube 203, a manifold 209 (hereinafter referred to as MF209) is arranged concentrically with the reaction tube 203. The upper end of the MF209 engages with the lower end of the reaction tube 203 and is configured to support the reaction tube 203. An O-ring 220a is provided between the MF209 and the reaction tube 203 as a sealing member. The reaction tube 203 is installed vertically, similar to the heater 207. The processing vessel (reaction vessel) is mainly composed of the reaction tube 203 and the MF209. A processing chamber 201 is formed in the processing vessel. The processing chamber 201 is configured to accommodate a wafer 200 as a substrate. Processing of the wafer 200 is carried out in this processing chamber 201.

[0010] Within the processing chamber 201, nozzles 249a to 249c, which serve as the first to third supply units, are provided so as to penetrate the side walls of the MF 209. Nozzles 249a to 249c are also referred to as the first to third nozzles. Nozzles 249a to 249c are made of, for example, quartz or SiC. Gas supply pipes 232a to 232c (hereinafter referred to as supply pipes 232a to 232c) are connected to nozzles 249a to 249c, which serve as the first to third piping. Nozzles 249a to 249c are all different nozzles.

[0011] The gas supply control equipment 248 installed in the supply pipes 232a to 232c, which are the first to third piping systems, will be explained with reference to Figure 2.

[0012] The supply pipes 232a (as the first piping) and 232b (as the second piping) are equipped with, in order from the upstream side of the gas flow, mass flow controllers (MFCs) 241a and 241b (flow control units), valves 243a and 243b (on-off valves), a first storage section 240a and a second storage section 240b (configured to temporarily store gas), and valves 242a and 242b, respectively. The first storage section 240a and the gas supply hole 250a (as the first supply port) are connected via the supply pipe 232a, and the second storage section 240b and the gas supply hole 250b (as the second supply port) are connected via the supply pipe 232b, which is independent of the supply pipe 232a and does not share a common section. A supply pipe 232e is connected downstream of valve 242a on the supply pipe 232a. Downstream of valve 242b in supply pipe 232b, supply pipes 232d and 232f are connected. Supply pipes 232d to 232f are provided with MFCs 241d to 241f and valves 243d to 243f in order from the upstream side of the gas flow.

[0013] The first storage section 240a and the second storage section 240b are configured, for example, as gas tanks with a larger gas capacity than ordinary piping, piping with a larger diameter than ordinary piping, or spiral piping. By opening and closing valves 243a, 243b upstream of the first storage section 240a and the second storage section 240b, and valves 242a, 242b downstream of the first storage section 240a and the second storage section 240b, respectively, it is possible to fill the first storage section 240a and the second storage section 240b with gas supplied from supply pipes 232a, 232b, and to supply the gas filled in the first storage section 240a and the second storage section 240b into the processing chamber 201. The conductance between the first storage section 240a and the processing chamber 201 is, for example, 1.5 × 10⁻⁶. －３ I understand ３ It is preferable to configure it so that the ratio is 1 / s or more. Also, considering the ratio of the volume of the processing chamber 201 to the volume of the first storage section 240a, when the volume of the processing chamber 201 is 100 L (liters), it is preferable that the volume of the first storage section 240a be, for example, 100 to 3000 cc, and is preferably 1 / 1000 to 30 / 1000 times the volume of the processing chamber 201. The same applies to the second storage section 240b.

[0014] By closing valves 242a and 242b and opening valves 243a and 243b, the gas whose flow rate has been adjusted by MFCs 241a and 241b can be filled into the first storage section 240a and the second storage section 240b, respectively. Once a predetermined amount of gas has been filled into the first storage section 240a and the second storage section 240b, and the pressure in the first storage section 240a and the second storage section 240b has reached a predetermined pressure, the high-pressure gas filled in the first storage section 240a and the second storage section 240b can be supplied to the processing chamber 201 in a short time in a flash by closing valves 243a and 243b and opening valves 242a and 242b. In this disclosure, flash supply is also called supply at a short time and high flow rate. During flash supply, valves 243a and 243b may be open. The pressure in the first storage section 240a and the pressure in the second storage section 240b can be measured using pressure sensors 274a and 274b provided around each respective section. Based on the measured pressure, a determination is made as to whether a predetermined pressure has been reached.

[0015] Furthermore, the supply pipe 232a is provided with a bypass line 272a that runs parallel to the first storage section 240a. Valves 271a and 273a are provided in the bypass line 272a. By opening and closing the valves 243a, 242a, 271a, and 273a, the first processing gas can be supplied to the nozzle 249a via the bypass line 272a without going through the first storage section 240a.

[0016] Furthermore, the supply pipe 232b is provided with a bypass line 272b that runs parallel to the second storage section 240b. Valves 271b and 273b are provided in the bypass line 272b. By opening and closing valves 243b, 242b, 271b, and 273b, the first processing gas can be supplied to the nozzle 249b via the bypass line 272b without going through the second storage section 240b.

[0017] Furthermore, a BG line 275a is provided in the supply pipe 232a so that the gas in the first storage section 240a can be exhausted to the pump 24 without going through the processing chamber 201. A valve 276a is provided on the supply pipe 232a side of the BG line 275a. By opening the valve 276a with the valve 242a closed, the first processing gas remaining in the first storage section 240a can be exhausted. If decomposed first processing gas remains in the first storage section 240a, the atmosphere in the first storage section 240a can be exhausted once via the BG line 275a, thereby preventing the decomposed gas present in the first storage section 240a from being supplied to the wafer 200.

[0018] Furthermore, a BG line 275b is provided in the supply pipe 232b so that the gas in the second storage section 240b can be exhausted to the pump 246 without going through the processing chamber 201. A valve 276b is provided on the supply pipe 232b side of the BG line 275b. By opening valve 276b with valve 242b closed, the first processing gas remaining in the second storage section 240b can be exhausted. If decomposed first processing gas remains in the second storage section 240b, the atmosphere in the second storage section 240b can be exhausted via the BG line 275b, thereby preventing the decomposed gas present in the second storage section 240b from being supplied to the wafer 200.

[0019] The supply pipe 232c is equipped with an MFC 241c and a valve 243c, which is an on / off valve, in order from the upstream side of the gas flow. Downstream of the valve 243c on the supply pipe 232c, the supply pipe 232g is connected. The supply pipe 232g is equipped with an MFC 241g and a valve 243g, in order from the upstream side of the gas flow.

[0020] As shown in Figure 3, nozzles 249a to 249c are each provided in an annular space in plan view between the inner wall of the reaction tube 203 and the wafer 200, extending upward from the lower part of the inner wall of the reaction tube 203 towards the wafer 200 in the direction of wafer arrangement. In other words, nozzles 249a to 249c are each provided in a region that horizontally surrounds the wafer arrangement region, on the side of the wafer arrangement region where the wafers 200 are arranged, and along the wafer arrangement region.

[0021] Nozzle 249c is positioned closer to the exhaust port 231a, which will be described later, than nozzles 249a and 249b. That is, nozzles 249a and 249b are positioned further from the exhaust port 231a than nozzle 249c. Furthermore, in a plan view, nozzles 249a and 249b are positioned symmetrically with respect to a line passing through the center of the wafer 200 when the wafer 200 is loaded into the processing chamber 201, i.e., the center of the reaction tube 203 and the center of the exhaust port 231a. In addition, nozzles 249b and 249c are positioned opposite each other on a straight line with respect to the center of the reaction tube 203. That is, nozzle 249b is positioned opposite (facing) nozzle 249c.

[0022] The sides of nozzles 249a to 249c are provided with gas supply holes 250a to 250c, which serve as first to third supply ports for supplying gas from the outer periphery of the wafer 200 toward the plane of the wafer 200. Multiple gas supply holes 250a to 250c are provided extending from the lower to the upper part of the reaction tube 203.

[0023] From the supply pipe 232a, the first processing gas is supplied as a raw material gas into the processing chamber 201 via the MFC 241a, valve 243a, first storage unit 240a, valve 242a, and nozzle 249a.

[0024] From the supply pipe 232b, the first processing gas is supplied as a raw material gas into the processing chamber 201 via the MFC 241b, valve 243b, second storage section 240b, valve 242b, and nozzle 249b.

[0025] From the supply pipe 232c, the second processing gas is supplied as a reaction gas into the processing chamber 201 via the MFC 241c, valve 243c, and nozzle 249c.

[0026] From the supply pipe 232d, reformed gas is supplied into the processing chamber 201 via the MFC 241d, valve 243d, and nozzle 249d.

[0027] Inert gas is supplied from supply pipes 232e to 232g into the processing chamber 201 via MFCs 241e to 241g, valves 243e to 243g, supply pipes 232a to 232c, and nozzles 249a to 249c, respectively. The inert gas acts as a purge gas, carrier gas, diluent gas, etc.

[0028] The first gas supply system (first processed gas supply system) is mainly composed of a supply pipe 232a, an MFC 241a, valves 243a and 242a, and a first storage unit 240a. The first gas supply system may also be configured to include a bypass line 272a and valves 271a and 273a. The second gas supply system (first processed gas supply system) is mainly composed of a supply pipe 232b, an MFC 241b, valves 243b and 242b, and a second storage unit 240b. The second gas supply system may also be configured to include a bypass line 272b and valves 271b and 273b. The third gas supply system (second processed gas supply system) is mainly composed of a supply pipe 232c, an MFC 241c, and valve 243c. The fourth gas supply system (reformed gas supply system) is mainly composed of supply pipe 232d, MFC 241d, and valve 243d. The inert gas supply system is mainly composed of supply pipes 232e to 232g, MFCs 241e to 241g, and valves 243e to 243g. The nozzles connected to the supply pipes that make up the above-mentioned various supply systems may also be included in each of those supply systems.

[0029] An exhaust port 231a for exhausting the atmosphere inside the processing chamber 201 is provided at the lower part of the side wall of the reaction tube 203. As shown in Figure 3, the exhaust port 231a is located in a position opposite (facing) the nozzles 249a and 249b (gas supply holes 250a and 250b) with the wafer 200 in between, in a plan view. The exhaust port 231a may be provided along the upper part of the side wall of the reaction tube 203, that is, along the wafer arrangement region. An exhaust pipe 231 is connected to the exhaust port 231a as an exhaust passage. A pump 246, which is an exhaust device, is connected to the exhaust pipe 231 via a pressure sensor 245, which is a pressure detector (pressure detection unit) for detecting the pressure inside the processing chamber 201, and an APC (Auto Pressure Controller) valve 244, which is a pressure regulator (pressure adjustment unit). The APC valve 244, acting as an exhaust valve, can be opened and closed while the pump 246 is operating to control exhaust and stop exhaust from the processing chamber 201. Furthermore, while the pump 246 is operating, the valve opening can be adjusted based on pressure information detected by the pressure sensor 245 to control the pressure inside the processing chamber 201. The exhaust system mainly consists of the exhaust pipe 231, the APC valve 244, and the pressure sensor 245. The pump 246 may also be considered as part of the exhaust system.

[0030] Below the MF209, a seal cap 219 (hereinafter SC219) is provided, which serves as a furnace opening cover capable of airtightly closing the lower end opening of the MF209. An O-ring 220b is provided on the upper surface of the SC219, which serves as a sealing member that contacts the lower end of the MF209. Below the SC219, a rotating mechanism 267 is installed for rotating the boat 217, which will be described later. The rotating shaft 255 of the rotating mechanism 267 passes through the SC219 and is connected to the boat 217. The rotating mechanism 267 is configured to rotate the wafer 200 by rotating the boat 217. The SC219 is configured to be raised and lowered vertically by a boat elevator 115 (hereinafter BE115), which serves as a lifting mechanism installed outside the reaction tube 203. The BE115 is configured as a transport device (transport mechanism) that moves the SC219 in and out (transports) the wafer 200 into and out of the processing chamber 201.

[0031] Below the MF209, a shutter 219s is provided as a furnace opening cover that can airtightly close the lower end opening of the MF209 when the SC219 is lowered and the boat 217 is removed from the processing chamber 201. An O-ring 220c is provided on the upper surface of the shutter 219s as a sealing member that contacts the lower end of the MF209. The opening and closing operation of the shutter 219s (such as lifting and lowering or rotating) is controlled by the shutter opening and closing mechanism 115s.

[0032] The boat 217, which serves as a substrate support, is configured to support multiple wafers 200, for example 25 to 200 wafers 200, in a horizontal position and aligned vertically, that is, to arrange them with spacing between them. The boat 217 is made of a heat-resistant material such as quartz or SiC. A multi-stage insulation plate 218 is supported at the bottom of the boat 217.

[0033] A temperature sensor 263 is installed inside the reaction tube 203 as a temperature detector. By adjusting the amount of power supplied to the heater 207 based on the temperature information detected by the temperature sensor 263, the temperature inside the processing chamber 201 is adjusted to the desired temperature distribution. The temperature sensor 263 is installed along the inner wall of the reaction tube 203.

[0034] As shown in Figure 4, the controller 121, which is the control unit (control means), is configured as a computer equipped with a CPU (Central Processing Unit) 121a, RAM (Random Access Memory) 121b, storage device 121c, and I / O port 121d. The RAM 121b, storage device 121c, and I / O port 121d are configured to exchange data with the CPU 121a via an internal bus 121e. An input / output device 122, configured as, for example, a touch panel, is connected to the controller 121. An external storage device 123 can also be connected to the controller 121. The board processing device may be configured to have one control unit, or it may be configured to have multiple control units. That is, the control for performing the processing sequence described later may be performed using one control unit, or it may be performed using multiple control units. Furthermore, the multiple control units may be configured as a control system connected to each other by a wired or wireless communication network, and the entire control system may perform the control necessary to carry out the processing sequence described later. In this specification, the term "control unit" may refer to a single control unit, a plurality of control units, or a control system composed of a plurality of control units.

[0035] The storage device 121c is composed of, for example, flash memory, HDD (Hard Disk Drive), SSD (Solid State Drive), etc. The storage device 121c contains, in a readable format, control programs that control the operation of the substrate processing device, and process recipes that describe the procedures and conditions for substrate processing, as described later. The process recipe functions as a program, combining the procedures in the substrate processing described later so that the controller 121 causes the substrate processing device to execute them and obtain a predetermined result. Hereinafter, process recipes and control programs will be collectively referred to simply as "programs." Similarly, process recipes will be simply referred to as "recipes." In this specification, the term "program" may include only recipes, only control programs, or both. The RAM 121b is configured as a memory area (work area) where programs and data read by the CPU 121a are temporarily held.

[0036] The I / O port 121d is connected to the MFCs 241a to 241g, valves 243a to 243g, 242a, 242b, pressure sensor 245, APC valve 244, pump 246, temperature sensor 263, heater 207, rotating mechanism 267, BE 115, shutter opening / closing mechanism 115s, etc.

[0037] The CPU 121a is configured to read and execute a control program from the storage device 121c, and to read a recipe from the storage device 121c in response to input of operation commands from the input / output device 122. The CPU 121a is configured to control the flow rate adjustment operation of various substances (various gases) by MFCs 241a to 241g, the opening and closing operation of valves 243a to 243g, 242a, and 242b, the opening and closing operation of the APC valve 244 and the pressure adjustment operation of the APC valve 244 based on the pressure sensor 245, the starting and stopping of the pump 246, the temperature adjustment operation of the heater 207 based on the temperature sensor 263, the rotation and rotation speed adjustment operation of the boat 217 by the rotation mechanism 267, the raising and lowering operation of the boat 217 by BE 115, and the opening and closing operation of the shutter 219s by the shutter opening and closing mechanism 115s, etc., in accordance with the contents of the read recipe.

[0038] The controller 121 can be configured by installing the above-mentioned program, which is recorded and stored in the external storage device 123, onto a computer. The external storage device 123 includes, for example, magnetic disks such as HDDs, optical disks such as CDs, and semiconductor memory such as USB memory and SSDs. The storage device 121c and the external storage device 123 are configured as computer-readable recording media. Hereinafter, these will be collectively referred to simply as recording media. In this specification, the term recording media may include only the storage device 121c, only the external storage device 123, or both. The program (program product) may be provided to the computer using communication means such as the Internet or a dedicated line, without using the external storage device 123.

[0039] (2) Substrate Processing Process An example of a processing sequence for processing a substrate as one step in the manufacturing process of a semiconductor device, using the substrate processing apparatus described above, that is, an example of a processing sequence for forming a film on a wafer 200 which is a substrate on which recesses such as trenches, grooves, and holes, which are three-dimensional structures, are formed on the surface, will be explained mainly with reference to Figure 5. In the following explanation, the operation of each part constituting the substrate processing apparatus is controlled by the controller 121.

[0040] In this embodiment, the processing sequence includes at least: a) supplying a processing gas to the wafer 200 at a first pressure via a first gas supply system having a first storage unit; b) supplying a processing gas to the wafer 200 at a second pressure lower than the first pressure via a second gas supply system having a second storage unit; and c) performing b) after a).

[0041] In this specification, the processing sequence described above may also be shown as follows for convenience. The same notation will be used in the following descriptions of variations and other embodiments.

[0042] {(First processed gas → First processed gas) → Exhaust → (Second processed gas → Exhaust)} × n

[0043] In this specification, the term "wafer" may refer to the wafer itself or to a laminate of a wafer and a predetermined layer or film formed on its surface. In this specification, the term "surface of a wafer" may refer to the surface of the wafer itself or to the surface of a predetermined layer formed on the wafer. In this specification, the phrase "form a predetermined layer on a wafer" may refer to directly forming a predetermined layer on the surface of the wafer itself or to forming a predetermined layer on top of a layer already formed on the wafer. In this specification, the term "substrate" has the same meaning as the term "wafer."

[0044] As used herein, the term "layer" includes at least one of continuous layers and discontinuous layers. For example, the first to third layers described later may include continuous layers, discontinuous layers, or both.

[0045] In this specification, when describing the adsorption or reaction of the first and second processing gases to the wafer 200 surface, it may include not only the mode in which they adsorb or react to the wafer surface while remaining undecomposed, but also the mode in which they decompose or intermediates generated by the detachment of their ligands adsorb or react to the wafer 200 surface.

[0046] (Wafer loading and boat loading) After multiple wafers 200 are loaded into the boat 217, the shutter 219s is moved by the shutter opening / closing mechanism 115s, and the lower end opening of the MF 209 is opened. Then, as shown in Figure 1, the boat 217 supporting the multiple wafers 200 is lifted by the BE 115 and loaded into the processing chamber 201. In this state, the SC 219 seals the lower end of the MF 209 via the O-ring 220b.

[0047] (Pressure and Temperature Adjustment) After boat loading is complete, the processing chamber 201, i.e., the space where the wafer 200 is located, i.e., the processing space, is evacuated by the pump 246 to the desired pressure. At this time, the pressure inside the processing chamber 201 is measured by the pressure sensor 245, and the APC valve 244 is feedback controlled based on this measured pressure information. The wafer 200 inside the processing chamber 201 is also heated by the heater 207 to the desired processing temperature. At this time, the amount of power supplied to the heater 207 is feedback controlled based on the temperature information detected by the temperature sensor 263 so that the processing chamber 201 has the desired temperature distribution. The rotation of the wafer 200 by the rotation mechanism 267 is also started. The evacuation of the processing chamber 201, the heating of the wafer 200, and the rotation are all continued at least until the processing of the wafer 200 is completed.

[0048] (First processing gas supply process S101) Subsequently, the first processing gas supply process S101 is performed. As shown in pattern A of Figure 5, the first processing gas supply process S101 consists of a step (step a) in which the first processing gas is supplied from the first gas supply system at a first pressure, and a step (step b) in which the first processing gas is supplied from the second gas supply system at a second pressure, which is lower than the first pressure. Note that, as shown in pattern B of Figure 5, step a may be performed in the second gas supply system and step b may be performed in the first gas supply system. The following explanation will describe pattern A.

[0049] [Step a] In this step, the first processing gas is supplied to the wafer 200 in the processing chamber 201 from the first gas supply system.

[0050] Before executing step a, valve 242a is kept closed, and valve 243a is opened to allow the first processing gas to flow into the supply pipe 232a. The flow rate of the first processing gas is adjusted by MFC 241a and supplied into the first storage section 240a. As a result, the first storage section 240a is filled with the first processing gas at a pressure up to the filling pressure (first pressure). Once a predetermined amount of the first processing gas has filled the first storage section 240a, valve 243a is closed to maintain the state in which the first processing gas is filled in the first storage section 240a.

[0051] After the first storage section 240a is filled with the first processing gas, valve 242a is opened, and the high-pressure first processing gas filled in the first storage section 240a is rapidly flowed into the depressurized processing chamber 201. This rapidly supplies the first processing gas to the wafer 200 (first flash supply of the first processing gas). At this time, valve 243a is kept open. At this time, valves 243e to 243g may be opened, and inert gas may be supplied into the processing chamber 201 through nozzles 249a to 249c. At this time, the valve opening of APC valve 244 is set to substantially fully open. However, at this time, valve 243a may be kept closed.

[0052] Examples of processing conditions when supplying the first processing gas in step a include: processing temperature: 250 to 900°C, preferably 650 to 850°C / processing pressure: 1 to 2666 Pa, preferably 1 to 1333 Pa / first processing gas filling pressure (first pressure): 60 to 1500 Torr, preferably 200 to 1200 Torr / first processing gas supply amount: 50 to 3000 cc, preferably 100 to 2000 cc / first processing gas supply time: 0.1 to 20 seconds, preferably 0.5 to 5 seconds / inert gas supply flow rate (per supply pipe): 0 to 20 slm. Note that the processing pressure in step a refers to the pressure before supplying the first processing gas from the first storage section 240a. Therefore, the pressure during the supply of the first processing gas will be in the relationship shown here: processing pressure < processing pressure during first processing gas supply < first processing gas filling pressure.

[0053] In this specification, numerical ranges such as "250 to 900°C" mean that the lower and upper limits are included within that range. For example, "250 to 900°C" means "250°C or more and 900°C or less." The same applies to other numerical ranges. In this specification, processing temperature means the temperature of the wafer 200 or the temperature inside the processing chamber 201, and processing pressure means the pressure inside the processing chamber 201. Processing time means the time during which the processing is continued. When the supply flow rate includes 0 slm, 0 slm means the case in which the substance (gas) is not supplied. These also apply in the following explanations.

[0054] Under the processing conditions described above, by supplying a first processing gas containing a predetermined element (i.e., a raw material gas containing a predetermined element) to the wafer 200, the first processing gas can be adsorbed onto the surface of the wafer 200, thereby forming a first layer containing the predetermined element.

[0055] When the specified element is silicon (Si), a silane-based gas can be used as the first processing gas. As the silane-based gas, for example, a gas containing Si and a halogen, i.e., a halosilane-based gas, can be used. As the halogen, one or more elements from chlorine (Cl), fluorine (F), bromine (Br), and iodine (I) can be used.

[0056] As the first processing gas, chlorosilane-based gases such as tetrachlorosilane (SiCl ４ ), monochlorosilane (SiH ３ Cl), dichlorosilane (SiH ２ Cl ２ ), trichlorosilane (SiHCl ３ ) can be used, which do not contain a bond between Si atoms (i.e., a bond between predetermined elements) in one molecule. As the first processing gas, in addition to chlorosilane-based gases, for example, fluorosilane-based gases such as tetrafluorosilane (SiF ４ ), difluorosilane (SiH ２ F ２ ), and bromosilane-based gases such as tetrabromosilane (SiBr ４ ), dibromosilane (SiH ２ Br ２ ), and iodosilane-based gases such as tetraiodosilane (SiI ４ ), diiodosilane (SiH ２ I ２ ) that do not contain a bond between predetermined elements in one molecule can also be used.

[0057] Also, as the first processing gas, hexachlorodisilane (Si ２ Cl ６ ), octachlorotrisilane (Si ３ Cl ８ ), monochlorodisilane (Si ２ H ５ Cl), dichlorodisilane (Si ２ H ４ Cl ２ ), trichlorodisilane (Si ２ H ３ Cl ３ ), tetrachlorodisilane (Si ２ H ２ Cl ４ ), monochlorotrisilane (Si ３ H ５ Cl), dichlorotrisilane (Si ３ H ４ Cl ２) and other chlorosilane-based gases that contain bonds between predetermined elements in a single molecule can be used.

[0058] In addition to the above, other gases containing Si and an amino group in one molecule, i.e., aminosilane gas, can also be used as the first processing gas. An amino group is a monovalent functional group obtained by removing hydrogen (H) from ammonia, a primary amine, or a secondary amine, and can be represented as -NH2, -NHR, or -NR2. Note that R represents an alkyl group, and the two R's in -NR2 may be the same or different.

[0059] For example, the first treatment gas is tetrakis(dimethylamino)silane (Si[N(CH ３ ) ２ ] ４ ), tris(dimethylamino)silane (Si[N(CH ３ ) ２ ] ３ H), bis(diethylamino)silane (Si[N(C) ２ H ５ ) ２ ] ２ H ２ ), bis(tert-butylamino)silane (SiH ２ [NH(C) ４ H ９ )] ２ ), (diisopropylamino)silane (SiH ３ [N(C) ３ H ７ ) ２ Aminosilane-based gases such as ) can also be used.

[0060] One or more of these can be used as the first treatment gas. This also applies to step a3, which will be described later.

[0061] As the inert gas, nitrogen gas or noble gases such as Ar gas, He gas, Ne gas, and Xe gas can be used. One or more of these can be used as the inert gas. This also applies to each step described later.

[0062] (ii) Step b Next, step b is performed. Step b is mainly performed using a supply system different from the supply system used in step a. Here, an example of performing step b using a second gas supply system will be described, as shown in pattern A of Figure 5. In step b, the first processing gas is supplied to the wafer 200 via the second gas supply system. In this step, the first processing gas is supplied to the second storage section 240b of the second gas supply system without filling it with gas. Alternatively, the first processing gas is supplied via a bypass line 272b provided in the second gas supply system. When supplying via the second storage section 240b, the first processing gas is supplied to the wafer 200 by opening valves 242b and 243b with valves 271b and 273b closed. Here, because the second storage section 240b is not filled with gas, the pressure in the supply pipe 232b becomes a second pressure, which is lower than the first pressure. When supplying the first processing gas using the bypass line 272b, the first processing gas is supplied to the wafer 200 by closing valves 242b and 243b and opening valves 271b and 273b. Even when supplying via the bypass line 272b, the pressure in the supply pipe 232b is a second pressure, which is lower than the first pressure, because the bypass line 272b is not filled with gas. Note that the second pressure in step b performed via the second storage section 240b and the second pressure in step b performed via the bypass line 272b may be different pressures, but the relationship first pressure > second pressure remains the same.

[0063] Examples of processing conditions when supplying the first processing gas in step b include: processing pressure: 1 to 2666 Pa, preferably 1 to 1333 Pa / first processing gas supply amount: 50 to 3000 cc, preferably 100 to 2000 cc / first processing gas supply time: 0.1 to 20 seconds, preferably 0.5 to 5 seconds / inert gas supply flow rate (per supply pipe): 0 to 20 slm. The processing pressure in step B refers to the pressure inside the processing chamber 201 while the first processing gas is being supplied. Here, the second pressure is at least in the relationship: processing pressure in step b < second pressure < first pressure.

[0064] In this way, by performing step b, the first processing gas can be adsorbed onto the surface of the wafer 200 on which the first layer is formed, and a second layer containing the predetermined element described above can be further formed. The second layer is mainly formed in areas on the surface of the wafer 200 where the first layer is not formed (for example, adsorption sites on the surface of the wafer 200, etc.). However, the second layer may be formed on top of the first layer. Here, the first layer and the second layer containing the predetermined element are described separately, but the first layer and the second layer together can also be considered as a single layer containing the predetermined element (a predetermined element-containing layer). The areas on the surface of the wafer 200 where the first layer is not formed include, for example, the following parts: In the case of a wafer 200 having recesses such as holes or trenches, it is the opening side or the bottom side of the recess. For example, if the first layer is formed on the bottom side of the recess in step a, the second layer can be formed on the opening side of the recess in step b.

[0065] In this explanation, we have described an example in which the first processing gas is supplied at a first pressure using the first storage unit 240a, as shown in Pattern A of Figure 5, and then the first processing gas is supplied at a second pressure using the second gas supply system. However, this is not the only option. In other cases, such as in Pattern B, the gas may be supplied at a third pressure using the second storage unit 240b, and then the first processing gas may be supplied at a fourth pressure, which is lower than the third pressure, using the first gas supply system.

[0066] Furthermore, as shown in pattern C of Figure 6, in the first processing gas supply process S101, step a may be performed using both the first gas supply system and the second gas supply system. In this case, in step a, the second gas supply system is operated in the same way as the first gas supply system to fill and supply the first processing gas to both the first storage section 240a and the second storage section 240b. This process of flash supply from both the first gas supply system and the second gas supply system is also called step k. As shown in pattern C, step l may be performed to continue supplying the first processing gas following the flash supply in the same way as step b described above. Furthermore, as shown in pattern D of Figure 6, step m may be performed following step k to supply the first processing gas at the second and fourth pressures using both the first and second gas supply systems. Furthermore, as shown in pattern E of Figure 6, step m may be performed following step a. In pattern C, the amount of the first layer formed can be increased. In pattern E, the amount of the second layer formed can be increased. In pattern D, the amount of both the first and second layers formed can be increased.

[0067] Furthermore, as shown in Figure 7, in the first processing gas supply step S101, the process of step S101 for patterns A and B shown in Figure 5 may be performed consecutively for a predetermined number of times Y (where Y is 1 or an integer of 2 or more). As shown in Figure 7, by using the first gas supply system and the second gas supply system in that order, it is possible to supply the first processing gas at a high filling pressure while ensuring storage time in the first storage section 240a and the second storage section 240b. Moreover, with this type of supply, even if the structure of the fine pattern formed on the wafer 200 becomes even finer and the surface area increases, it is possible to form the first layer uniformly. In other words, step coverage can be improved.

[0068] Furthermore, as shown in Figure 8, in the first processing gas supply step S101, following the supply of the first processing gas at a first pressure using the first storage unit 240a of the first gas supply system, the first processing gas may be supplied at a third pressure using the second storage unit 240b of the second gas supply system. This third pressure is set to a pressure range close to the first pressure. This process of continuous flash supply may be performed Z times (where Z is 1 or an integer of 2 or more). After Z times, the same process as in step b described above is performed.

[0069] (Purge process S102) After forming the second layer on the surface of the wafer 200, valves 243b and 242b (valves 243a and 242a) are closed to stop the supply of the first processing gas into the valve processing chamber 201. Then, the purge process S102 is performed. In the purge process S102, valves 243e to 243g are opened and inert gas is supplied into the processing chamber 201 via nozzles 249a to 249c. The inert gas supplied from nozzles 249a to 249c acts as a purge gas, thereby purging the space in which the wafer 200 is located, i.e., the processing chamber 201, which is the space in which processing is performed on the wafer 200 (processing space). After that, valves 243e to 243g are closed to stop the supply of inert gas into the processing chamber 201. Then, the processing chamber 201 is evacuated to remove any gaseous substances remaining in the processing chamber 201.

[0070] Here, "purging" means removing intermediates of the first and second process gases, and other by-products present in the processing chamber 201 by supplying an inert gas into the processing chamber 201. "Exhausting" means removing intermediates of the first and second process gases present in the processing chamber 201 without supplying an inert gas into the processing chamber 201. Furthermore, "without supplying an inert gas" in "exhausting" means that no purge gas is supplied, although carrier gas or small amounts of inert gas may be supplied. In addition, "intermediates of the first and second process gases" refers to the first and second process gases that are mainly thermally decomposed in the processing chamber 201.

[0071] (Second processing gas supply process S103) After the purging process S102 is completed, the second processing gas is supplied to the wafer 200 in the processing chamber 201.

[0072] Specifically, valve 243c is opened to allow the second processing gas to flow into the supply pipe 232c. The flow rate of the second processing gas is adjusted by MFC 241c and supplied into the processing chamber 201 via nozzle 249c, and exhausted from exhaust port 231a. At this time, the second processing gas is supplied to the wafer 200 (second processing gas supply). At this time, valves 243e to 243g may be opened to supply inert gas into the processing chamber 201 via nozzles 249a to 249c, respectively. At this time, the valve opening of APC valve 244 is reduced from the fully open state. Specifically, the valve opening of APC valve 244 is adjusted to a state between fully open and fully closed, such that the pressure in the processing chamber 201 becomes a predetermined processing pressure.

[0073] Examples of processing conditions when supplying the second processing gas in this step include: processing temperature: 250 to 900°C, preferably 650 to 850°C / processing pressure: 10 to 10000 Pa, preferably 20 to 5000 Pa / second processing gas supply flow rate: 0.001 to 20 slm, preferably 1 to 10 slm / second processing gas supply time: 1 to 120 seconds, preferably 1 to 60 seconds / inert gas supply flow rate (per supply pipe): 0 to 20 slm.

[0074] By supplying the second processing gas to the wafer 200 under the processing conditions described above, at least a portion of the first and second layers formed on the wafer 200 reacts with the second processing gas and is modified. As a result, a third layer, which is a modified layer of the first and second layers, is formed on the wafer 200. In other words, the second processing gas is a reaction gas that reacts with the first and second layers to modify them into the third layer.

[0075] As the second processing gas, for example, a nitrogen (N) and hydrogen (H) containing gas, which is a nitriding gas, can be used. The N and H containing gas is both an N-containing gas and an H-containing gas. It is preferable that the N and H containing gas has an N-H bond.

[0076] For example, the second treatment gas is ammonia (NH₄). ３ ), diazene (N ２ H ２ ), hydrazine (N ２ H ４ ), N ３ H ８ Hydrogen nitride-based gases such as the above can be used.

[0077] As the second processing gas, in addition to the above, for example, gases containing N, carbon (C), and H can also be used. As N, C, and H-containing gases, for example, amine-based gases and organic hydrazine-based gases can be used. The N, C, and H-containing gas is also an N-containing gas, a C-containing gas, an H-containing gas, and an N and C-containing gas.

[0078] As the second treatment gas, for example, monoethylamine (C) ２ H ５ NH ２ ), diethylamine ((C ２ H ５ ) ２ NH), triethylamine ((C ２ H ５ ) ３ Ethylamine-based gases such as N) and monomethylamine (CH) ３ NH ２ ), dimethylamine ((CH ３ ) ２ NH), trimethylamine ((CH ３ ) ３ Methylamine-based gases such as N) and monomethylhydrazine ((CH) ３ ) HN ２ H ２ ), dimethylhydrazine ((CH ３ ) ２ N ２ H ２ ), trimethylhydrazine ((CH ３ ) ２ N ２ (CH ３ Organic hydrazine-based gases such as )H) can be used.

[0079] One or more of these can be used as the second treatment gas.

[0080] After forming the third layer on the surface of the wafer 200, the valve 243c is closed to stop the supply of the second processing gas into the processing chamber 201.

[0081] (Purge process S104) Then, the processing chamber 201 is purged using the same processing procedure and processing conditions as in the purge process S102.

[0082] [Performed a predetermined number of times] By performing the above-described supply step S101 of the first processing gas and supply step S103 of the second processing gas in this order non-simultaneously, that is, without synchronization, a first cycle is performed X times (X is 1 or an integer of 2 or more), a film can be formed on the surface of the wafer 200. That is, the first cycle in this embodiment is a cycle that includes the supply step S101 of the first processing gas and the supply step S103 of the second processing gas, respectively. From another viewpoint, in this embodiment, the supply step S101 of the first processing gas and the supply step S103 of the second processing gas are performed alternately X times. If the predetermined element contained in the first processing gas is, for example, Si, a Si-containing film, such as a silicon nitride film (SiN film), can be formed on the surface of the wafer 200. It is preferable to repeat the above-described first cycle multiple times. At this time, it is preferable that the amount of first processing gas pre-filled in the first storage section 240a and the second storage section 240b is a constant amount for each cycle. Furthermore, in the second and subsequent first cycles, it is preferable to fill the first storage unit 240a with the first processing gas in step a in parallel with supplying the second processing gas in step S103 of the previous cycle.

[0083] As shown in Figure 9, the X1 and X2 cycles may be combined. In the X1 cycle, step a of the first processing gas supply process S101 is performed using the first gas supply system, and step b is performed using the second gas supply system. In the X2 cycle, step a of the first processing gas supply process S101 is performed using the second gas supply system, and step b is performed using the first gas supply system. In this way, the wafer 200 may be processed by combining cycles X1 and X2, in which the gas supply systems used in steps a and b are changed. By changing the gas supply systems used in steps a and b in this way, it is possible to suppress the decrease in processing uniformity of the wafer 200 due to the positional relationship between the wafer 200 and the gas supply port. In particular, it is possible to improve the in-plane uniformity of the film formed on the wafer 200 and the uniformity within the recessed areas. Furthermore, the time required for the cycle (S101 to S104) is short, allowing sufficient time to store the first processed gas in both the first storage section 240a and the second storage section 240b. Here, X1 and X2 are performed a number of times equal to 1 or an integer of 2 or more. Alternatively, X1 may be performed A times, followed by X2 B times, and this cycle may be repeated C times. Here, A, B, and C are integers equal to 1 or an integer of 2 or more.

[0084] (Purge and return to atmospheric pressure) After the formation of a film of the desired thickness on the wafer 200 is complete, inert gas is supplied into the processing chamber 201 as a purge gas from each of the nozzles 249a to 249c and exhausted from the exhaust port 231a. This purges the processing chamber 201, removing any remaining gases and reaction by-products. Subsequently, the atmosphere inside the processing chamber 201 is replaced with inert gas, and the pressure inside the processing chamber 201 is returned to atmospheric pressure.

[0085] (Boat removal and wafer retrieval) Subsequently, SC219 is lowered by BE115, and the lower end of MF209 is opened. Then, the processed wafer 200, supported by the boat 217, is removed from the reaction tube 203 through the lower end of MF209. After the boat is removed, the shutter 219s is moved, and the lower end opening of MF209 is sealed by the shutter 219s. After the processed wafer 200 has been removed from the reaction tube 203, it is taken out of the boat 217.

[0086] (3) Effects of this embodiment According to this embodiment, one or more of the following effects can be obtained.

[0087] (a) As shown in Pattern A (Pattern B) of Figure 5, by using two gas supply systems, performing step a in one gas supply system (e.g., first gas supply system) and step b in the other gas supply system (e.g., second gas supply system), the step coverage of the film formed in the recesses of the wafer 200 can be improved. In addition, in one gas supply system, the storage process of the first processing gas can be started after step a is performed, and the storage time of the first processing gas can be secured. Furthermore, by performing step a in one gas supply system, interference of gas flow on the wafer 200 that may occur when step a is performed in multiple gas supply systems can be suppressed. As a result, step coverage can be further improved.

[0088] (b) As shown in patterns C and D of Figure 6, by performing step a using two gas supply systems, the amount of first processing gas supplied into the recess of the wafer 200 in step a can be increased. As a result, the step coverage of the first layer formed in the recess can be improved.

[0089] (c) As shown in patterns D and E of Figure 6, by performing step b using two gas supply systems, the amount of the first processing gas supplied into the recess of the wafer 200 in step b can be increased. As a result, the step coverage of the second layer formed in the recess can be improved.

[0090] (d) As shown in Figure 7, in the first processing gas supply step S101, by changing the gas supply system and performing (step a → step b) a predetermined number of times, the first layer and the second layer can be laminated in the recess of the wafer 200. Furthermore, even when the time required for S101 is short, the storage time of the first processing gas in the first storage section 240a and the second storage section 240b can be secured, and the amount of first processing gas required for step a can be secured. Also, as shown in Figure 7, by performing (step a → step b) two or more times, the deterioration of the uniformity of the layer (film) characteristics caused by the positional relationship between the gas supply port and the wafer 200 can be suppressed. Here, characteristics refer to the thickness distribution of the layer (film), refractive index, electrical characteristics, etc.

[0091] (e) As shown in Figure 8, in the first processing gas supply step S101, by configuring the system to perform step a using the second gas supply system immediately following the execution of step a using the first gas supply system, it is possible to suppress deterioration of the uniformity of the characteristics of the first layer caused by the positional relationship between the wafer 200 and the gas supply port. Furthermore, it is possible to suppress interference of gas flow on the wafer 200 that may occur when the timing of step a is performed in both the first gas supply system and the second gas supply system overlaps (for example, patterns C and D in Figure 6). As a result, the uniformity of the characteristics of the first layer formed on the wafer 200 can be improved.

[0092] (f) As shown in Figure 9, by combining the X1 cycle and the X2 cycle, it is possible to suppress the decrease in processing uniformity of the wafer 200 due to the positional relationship between the wafer 200 and the gas supply port. In particular, it is possible to improve the in-plane uniformity of the film formed on the wafer 200 and the uniformity within the recessed surface.

[0093] (g) By supplying the first processing gas in step b through a bypass line provided in a gas supply system different from the gas supply system that performed step a, it is possible to adjust the state inside the supply pipe other than the bypass line. For example, the case where step a is performed by the first gas supply system and step b is performed through the bypass line 272b of the second gas supply system will be described. While step b is being performed through the bypass line 272b, in the first storage unit 240a of the first gas supply system, a storage process can be performed. Also, in the second storage unit 240b, it is possible to maintain the state where the first processing gas is pressurized to a predetermined pressure, and step a in the next cycle after step b can be performed from the second storage unit 240b.

[0094] (4) Variation The processing sequence in this embodiment can be changed as in the following variations. These variations can be arbitrarily combined. Unless otherwise specified, the processing procedures and processing conditions in each step of each variation can be the same as those in each step of the above-described processing sequence.

[0095] (Variation) As shown in FIG. 10, before the supply step S101 of the first processing gas, a reformed gas supply step S105 and a purge step S106 may be performed. In the reformed gas supply step S105, a reformed gas that inhibits the adsorption of the first processing gas to the surface of the wafer 200 is supplied to the wafer 200.

[0096] As the reformed gas, a gas containing at least one of Cl, F, Br, and I as halogen elements can be used. As the reformed gas, for example, F ２ , Cl ２ , Br ２ , I ２ and other single gas of halogen elements, ClF ３ , BrCl, ICl, IF ５ , IF ７ , BrF ３, gases of interhalogen compounds such as IBr, gases of hydrogen halide compounds such as HCl, HF, HBr, HI, or gases combining these gases can be used. Further, radicals containing halogen elements (Cl ＊ , F ＊ , Br ＊ , I ＊ , etc.) generated by activating these gases by plasma excitation or the like can be used. As the reforming gas, one or more of these can be used.

[0097] In the reforming gas supply step S105 or the like, the reforming gas is supplied to the wafer 200 in the processing chamber 201 by the reforming gas supply system.

[0098] As the processing conditions for supplying the reforming gas in this step, processing temperature: 250 to 900 °C, preferably 650 to 850 °C / processing pressure: 1 to 10,000 Pa, preferably 10 to 1333 Pa / reforming gas supply flow rate: 0.01 to 3 slm, preferably 0.1 to 1 slm / reforming gas supply time: 1 to 120 seconds, preferably 5 to 30 seconds / inert gas supply flow rate (per supply pipe): 0 to 20 slm are exemplified.

[0099] By supplying the reforming gas to the wafer 200 under the above-described processing conditions, the reforming gas can be adsorbed on the adsorption sites existing on the surface of the wafer 200 having recesses. By supplying the reforming gas to the wafer 200 under the above-described processing conditions, the adsorption of the first processing gas supplied in step A onto the wafer 200 is inhibited. By controlling the adsorption of the first processing gas on the surface inside the recesses by supplying the reforming gas, the step coverage of the film formed on the recesses can be improved. For example, by selectively adsorbing the reforming gas on the upper part of the side wall surface inside the recesses, the first processing gas can be preferentially adsorbed on the lower part and the bottom of the side wall surface inside the recesses, and bottom-up film formation can be realized.

[0100] In this modified example, the same effects as those in the above-described embodiment can be obtained. In this modified example, the step coverage of the membrane can be further improved. In addition, throughput can be improved by supplying reformed gas in parallel with the exhaust process.

[0101] Following the reformed gas supply process S105, a purging process S106 is performed. The procedure for the purging process S106 is the same as that for the other purging processes S102 and S104.

[0102] <Other Aspects of the Disclosure> The aspects of the Disclosure have been described in detail above. However, the Disclosure is not limited to the aspects described above and can be modified in various ways without departing from its essence.

[0103] In the above-described embodiment, the supply of the first processing gas under the first pressure in step a and the supply of the first processing gas under the second pressure in step b are stored in the first storage section 240a and the second storage section 240b, respectively, and the pressure relationship of each step is adjusted by supplying the pressurized first processing gas. However, the method is not limited to this, and the pressure on the wafer 200 in step a and the pressure on the wafer 200 in step b can also be adjusted by controlling the exhaust system so that the pressure relationship is as described above. Specifically, the above-described pressure relationship can be achieved by making the exhaust volume of the space on the wafer 200 in step a smaller than the exhaust volume of the space on the wafer 200 in step b.

[0104] Furthermore, the first to fourth pressures may be the total pressure. Preferably, they may be the partial pressure of the first processing gas. Note that the first to fourth pressures refer to the pressures flowing through the gas supply pipes 232a and 232b through which the target gas flows, and can be controlled separately from the pressure inside the processing chamber 201.

[0105] Furthermore, in the embodiments described above, a raw material gas containing Si as a predetermined element was used as an example of the first processing gas. However, the disclosure is not limited thereto. For example, the disclosure can also be applied when a first processing gas containing metal elements such as Al, Ti, Hf, Zr, Ta, Mo, and W as predetermined elements is used, and a film containing metal elements such as AlN, TiN, HfN, ZrN, TaN, MoN, WNAlO, TiO, HfO, ZrO, TaO, MoO, WO, TiON, TiAlCN, and TiAlCTiCN is formed on the wafer 200 by the processing sequence described above. The same effects as in the embodiments described above can be obtained in this embodiment as well.

[0106] Furthermore, in the above-described embodiments, as the second processing gas, for example, a reaction gas containing N (nitriding gas) containing N and an N and H-containing gas was given as an example. However, the present disclosure is not limited thereto. For example, as the reaction gas, C ２ H ４ , C ２ H ２ , C ３ H ６ Carbon (C)-containing gases such as B ２ H ６ , BCl ３ Boron (B)-containing gases such as O ２ , O ３ , plasma excited O ２ (O ２ ＊ ), O ２ +H ２ , H ２ O, H ２ O ２ , N ２ O, NO, NO ２ CO, CO ２ Oxygen (O)-containing gases (oxidizing gases), etc., can be used. Note that in this specification, "O ２ +H ２ The joint listing of two gases, such as "", is H ２ and O ２This refers to a mixed gas. When supplying a mixed gas, the two gases may be mixed (premixed) in the supply pipe before being supplied into the processing chamber 201, or the two gases may be supplied separately to the processing chamber 201 from different supply pipes and mixed (postmixed) in the processing chamber 201. One or more of these can be used as the second processing gas. In this embodiment, the same effects as in the embodiment described above can be obtained.

[0107] Furthermore, the above-described embodiment exemplifies the case in which a SiN film is formed on a wafer 200 during substrate processing. However, the disclosure is not limited thereto. In addition to SiN, the disclosure can also be applied when forming films containing Si, such as SiCN, SiON, SiOC, SiOCN, SiBCN, SiBN, and SiO. The same effects as those in the above-described embodiment can be obtained in this embodiment as well.

[0108] Furthermore, the above-described embodiments illustrate the case in which a raw material gas is used as the first process gas and a reaction gas is used as the second process gas. However, the disclosure is not limited thereto. For example, the reaction gas can be supplied as the first process gas from the first and second supply ports, and the raw material gas can be supplied as the second process gas from the third supply port. In this embodiment as well, at least some of the same effects as in the above-described embodiments can be obtained.

[0109] It is preferable that the recipes used for each process are prepared individually according to the processing content, recorded and stored in the storage device 121c via a telecommunications line or external storage device 123. When starting each process, it is preferable that the CPU 121a appropriately selects the appropriate recipe from among the multiple recipes recorded and stored in the storage device 121c according to the processing content. This makes it possible to form films of various film types, composition ratios, film quality, and film thickness with good reproducibility using a single substrate processing device. Furthermore, it reduces the burden on the operator and allows each process to be started quickly while avoiding operational errors.

[0110] The above-mentioned recipes are not limited to newly created ones; they may also be prepared, for example, by modifying existing recipes already installed in the board processing device. When modifying a recipe, the modified recipe may be installed in the board processing device via a telecommunications line or a recording medium on which the recipe is stored. Alternatively, existing recipes already installed in the board processing device may be directly modified by operating the input / output device 122 provided in the existing board processing device.

[0111] The above-described embodiments describe an example of forming a film using a batch-type substrate processing apparatus that processes multiple substrates at once. This disclosure is not limited to the above-described embodiments and can be suitably applied, for example, to forming a film using a single-wafer substrate processing apparatus that processes one or several substrates at once. Furthermore, the above-described embodiments describe an example of forming a film using a substrate processing apparatus having a hot-wall type processing furnace. This disclosure is not limited to the above-described embodiments and can be suitably applied to forming a film using a substrate processing apparatus having a cold-wall type processing furnace. Furthermore, the above-described embodiments describe an example of activating a gas with heat. However, this disclosure is not limited thereto. For example, it can be suitably applied to cases where the gas is activated by plasma generated inside or outside the processing chamber 201, or by irradiating the gas with electromagnetic waves using a lamp or the like.

[0112] Even when using these substrate processing devices, each process can be carried out using the same processing procedures and conditions as described above, and the same effects as described above can be obtained.

[0113] The above-described embodiments and modifications can be used in appropriate combinations. The processing procedure and processing conditions in this case can be, for example, the same as those described above.

[0114] [Correction based on Rule 91, 20.05.2025] The disclosure of Japanese Patent Application No. 2024-168323, filed on 27 September 2024, is incorporated herein by reference in its entirety. All documents, patent applications, and technical standards described herein are incorporated herein by reference to the same extent as if each individual document, patent application, and technical standard had been specifically and individually indicated as being incorporated by reference.

Claims

1. A substrate processing method comprising: a) supplying a processing gas to a substrate at a first pressure via a first gas supply system having a first storage section; b) supplying the processing gas to the substrate at a second pressure lower than the first pressure via a second gas supply system having a second storage section; and c) performing b) after a).

2. b) The substrate processing method according to claim 1, wherein the processing gas is supplied to the substrate via the second storage unit.

3. The substrate processing method according to claim 1, wherein the second gas supply system has a bypass line parallel to the second storage unit, and b) is performed via the bypass line of the second gas supply system.

4. The substrate processing method according to claim 1, wherein the processing gas remaining in the first storage unit is exhausted.

5. The substrate processing method according to claim 1, wherein the processing gas is stored in the first storage section in (b).

6. The substrate processing method according to claim 1, comprising: d) supplying the processing gas to the substrate via the second storage unit at a third pressure higher than the second pressure; and e) supplying the processing gas to the substrate via the first gas supply system at a fourth pressure lower than the third pressure.

7. The substrate processing method according to claim 6, further comprising the step of performing f) e) after d).

8. e) The substrate processing method according to claim 6, which is performed via the first storage unit.

9. The substrate processing method according to claim 7, wherein the first gas supply system has a bypass line parallel to the first storage unit, and e) is performed via the bypass line of the first gas supply system.

10. e) The substrate processing method according to claim 7, wherein the processing gas remaining in the second storage unit is exhausted.

11. e) The substrate processing method according to claim 7, wherein the processing gas is stored in the second storage section.

12. g) A substrate processing method according to claim 6, comprising the step of performing one or more of b) and e) after performing a) and d) a predetermined number of times.

13. The substrate processing method according to claim 7, wherein c) and f) are performed a predetermined number of times.

14. The substrate processing method according to claim 1, further comprising the step of supplying a reaction gas to the substrate, wherein h) is performed after c).

15. The substrate processing method according to claim 7, comprising: h) a step of supplying a reaction gas to the substrate; i) a step of performing c), h), f) in this order a predetermined number of times.

16. The substrate processing method according to claim 12, comprising: h) a step of supplying a reaction gas to the substrate; and j) a step of performing g) and h) a predetermined number of times.

17. The substrate processing method according to claim 6, further comprising: k) a step of performing a) and d) at the same time; and l) a step of performing one or more of b) and e) after k).

18. The substrate processing method according to claim 6, further comprising the step of performing both b) and e) after performing one or more of a) and d).

19. A method for manufacturing a semiconductor device, comprising: a) supplying a processing gas to a substrate at a first pressure via a first gas supply system having a first storage section; b) supplying the processing gas to the substrate at a second pressure lower than the first pressure via a second gas supply system having a second storage section; and c) performing b) after a).

20. A program that causes a computer to cause a substrate processing apparatus to execute the following: a) a procedure for supplying a processing gas to a substrate at a first pressure via a first gas supply system having a first storage unit; b) a procedure for supplying the processing gas to the substrate at a second pressure lower than the first pressure via a second gas supply system having a second storage unit; and c) a procedure for performing b) after a).

21. A substrate processing apparatus comprising: a first gas supply system having a first storage section and a first supply port configured to supply a first processing gas filled in the first storage section to a substrate; a second gas supply system having a second storage section and a second supply port different from the first supply port configured to supply the first processing gas filled in the second storage section to the substrate; and a control unit configured to control the first gas supply system and the second gas supply system to perform the following: a) a process of supplying processing gas to the substrate from the first gas supply system at a first pressure; b) a process of supplying the first processing gas to the substrate from the second gas supply system at a second pressure lower than the first pressure; and c) a process of performing b) after a).

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