Electronic device production method

Abstract

This electronic device production method includes the following steps in the stated order: preparing a structure including an adhesive film including a base material layer and a photocurable adhesive resin layer (A), and a semiconductor chip directly attached to the adhesive resin layer (A) of the adhesive film; irradiating the structure with light from the semiconductor chip side; and sealing the semiconductor chip with a sealing material.

Description

Method for manufacturing an electronic device

[0001] The present invention relates to a method for manufacturing an electronic device.

[0002] As a technology capable of reducing the size and weight of an electronic device (for example, a semiconductor device), a fan-out package is known. In eWLB (Embedded Wafer Level Ball Grid Array), which is one of the manufacturing methods of a fan-out package, a plurality of electronic components such as semiconductor chips are temporarily fixed in a separated state on an adhesive film attached to a support substrate, and a method of collectively encapsulating the plurality of electronic components with a sealing material is employed. Here, the adhesive film needs to be fixed to the electronic components and the support substrate in the encapsulation process and the like, and needs to be removed from the electronic components encapsulated together with the support substrate after encapsulation.

[0003] As a technology related to such a manufacturing method of a fan-out package, for example, the one described in Patent Document 1 (Japanese Unexamined Patent Application Publication No. 2011-134811) can be cited.

[0004] Patent Document 1 aims to solve problems such as a problem that a chip is not held by the pressure during resin encapsulation and is displaced from a designated position, or a problem that the package is damaged due to curing of the sealing material or strong adhesion to the chip surface due to heat when peeling a heat-resistant adhesive sheet for manufacturing a semiconductor device. When resin-encapsulating a substrate-less semiconductor chip, there is provided a heat-resistant adhesive sheet for manufacturing a semiconductor device that is adhered and used, and the heat-resistant adhesive sheet has a base material layer and an adhesive layer, and the adhesive layer has an adhesive force to SUS304 of 0.5 N / 20 mm or more after bonding and cures by the stimulation received until the completion of the resin encapsulation process, and has a layer in which the peeling force from the package is 2.0 N / 20 mm or less.

[0005] Japanese Unexamined Patent Application Publication No. 2011-134811

[0006] According to the inventors' studies, it has become clear that when a semiconductor chip is placed on an adhesive film and sealed with an encapsulant, the position of the semiconductor chip may shift horizontally (hereinafter also referred to as chip shift). On the other hand, when the adhesive strength of the adhesive film is improved to reduce chip shift, the adhesive resin layer is made thicker or the elastic modulus of the adhesive resin layer is reduced, which can lead to sealing defects (hereinafter referred to as standoff) when the semiconductor chip is sealed with the encapsulant, due to the pressure of the encapsulant causing the semiconductor chip to sink into the adhesive film. It has also become clear that when the adhesive film is peeled off from the semiconductor chip, adhesive residue may remain on the surface of the encapsulant layer. The present invention provides a method for manufacturing an electronic device that can suppress chip shift, standoff, and adhesive residue on the surface of the encapsulant layer.

[0007] The inventors diligently conducted research to achieve the above objectives. As a result, they discovered that chip shift, standoff, and adhesive residue on the surface of the sealing layer can be suppressed by a manufacturing method that includes specific steps, and thus completed the present invention.

[0008] According to the present invention, a method for manufacturing the following electronic device is provided.

[0009] [1] A method for manufacturing an electronic device, comprising the steps of: preparing a structure comprising an adhesive film having a base layer and a photocurable adhesive resin layer (A), and a semiconductor chip directly attached to the adhesive resin layer (A) of the adhesive film; irradiating the structure with light from the semiconductor chip side; and sealing the semiconductor chip with an encapsulant, in this order. [2] The method for manufacturing an electronic device according to [1], further comprising the step of irradiating the structure with light from the adhesive film side after the step of sealing the semiconductor chip with an encapsulant. [3] The method for manufacturing an electronic device according to [2], further comprising the step of peeling the adhesive film from the semiconductor chip after the step of irradiating the structure with light from the adhesive film side. [4] The method for manufacturing an electronic device according to any one of [1] to [3], wherein the light used for the light irradiation includes ultraviolet light. [5] The method for manufacturing an electronic device according to any one of [1] to [4], wherein the base layer is light-transmitting. [6] The method for manufacturing an electronic device according to any one of [1] to [5] above, wherein the base layer comprises one or more selected from the group consisting of polyolefin, polyethylene terephthalate, polybutylene terephthalate, polyethylene naphthalate, ethylene vinyl acetate copolymer, polyamide, and polyimide. [7] The method for manufacturing an electronic device according to any one of [1] to [6] above, wherein the adhesive resin layer (A) comprises one or more selected from the group consisting of (meth)acrylic adhesive resin, silicone adhesive resin, urethane adhesive resin, olefin adhesive resin, and styrene adhesive resin. [8] The method for manufacturing an electronic device according to any one of [1] to [7] above, wherein the total content of gas generating components and thermally expandable microspheres in the adhesive resin layer (A) is 0.1% by mass or less when the entire adhesive resin layer (A) is considered as 100% by mass. [9] The method for manufacturing an electronic device according to any one of [1] to [8], wherein the adhesive film further comprises an adhesive resin layer (B) on the side of the base layer opposite to the adhesive resin layer (A).

[10] The method for manufacturing an electronic device according to [9], wherein the adhesive resin layer (B) of the adhesive film is a layer whose adhesive strength decreases when heated.

[11] The method for manufacturing an electronic device according to [9] or

[10] , wherein the adhesive resin layer (B) of the adhesive film contains a heat-expandable adhesive.

[12] The method for manufacturing an electronic device according to

[11] , wherein the heat-expandable adhesive in the adhesive film is an adhesive whose adhesive strength decreases or is lost when heated at a temperature exceeding 150°C.

[13] The method for manufacturing an electronic device according to any one of [9] to

[12] , wherein the structure further includes a support substrate on the adhesive resin layer (B) side of the adhesive film.

[14] The method for manufacturing an electronic device according to

[13] , wherein the support substrate is a stainless steel substrate or a glass substrate.

[15] The method for manufacturing an electronic device according to any one of [1] to

[14] , wherein the adhesive film further comprises a surface-absorbing resin layer (C).

[16] The method for manufacturing an electronic device according to

[15] , wherein the thickness of the surface-absorbing resin layer (C) is 5 μm or more and 500 μm or less.

[17] A method for manufacturing an electronic device according to any one of [1] to

[16] above, wherein the step of sealing the semiconductor chip with the sealing material comprises the steps of forming a sealing layer made of the sealing material and curing the sealing layer by treating it with one or more methods selected from the group consisting of light irradiation and heat treatment.

[18] A method for manufacturing an electronic device according to any one of [1] to

[17] above, wherein the sealing material includes an epoxy resin sealing material.

[19] A method for manufacturing an electronic device according to any one of [1] to

[18] above, wherein the step of irradiating the structure with light from the semiconductor chip side is performed under a nitrogen atmosphere or under a vacuum.

[20] A method for manufacturing an electronic device according to any one of [1] to

[19] above, wherein the semiconductor chip has an uneven structure.

[21] A method for manufacturing an electronic device according to

[20] above, wherein the uneven structure includes bump electrodes.

[22] A method for manufacturing an electronic device according to any one of [1] to

[21] above, wherein the electronic device includes a fan-out type package.

[0010] According to the present invention, it is possible to provide a method for manufacturing an electronic device that can suppress chip shift, standoff, and adhesive residue on the surface of the sealing layer.

[0011] This is a schematic cross-sectional view illustrating an example of the structure of an adhesive film used in a method for manufacturing an electronic device according to an embodiment of the present invention. This is a schematic cross-sectional view illustrating an example of the structure of an adhesive film used in a method for manufacturing an electronic device according to an embodiment of the present invention. This is a schematic cross-sectional view illustrating an example of a method for manufacturing an electronic device according to an embodiment of the present invention. This is a schematic cross-sectional view illustrating an example of a method for manufacturing an electronic device according to an embodiment of the present invention. This is a schematic cross-sectional view illustrating an example of a method for manufacturing an electronic device according to an embodiment of the present invention.

[0012] Embodiments of the present invention will be described below with reference to the drawings. In all drawings, similar components are denoted by the same reference numerals, and their descriptions are omitted as appropriate. Also, the drawings are schematic diagrams and do not necessarily correspond to the actual dimensional ratios. In the specification, the notation "A to B" regarding numerical ranges means A or more and B or less unless otherwise specified. For example, 1 to 5% means 1% or more and 5% or less. In the specification, "(meth)acrylic" means acrylic, methacrylic, or both acrylic and methacrylic.

[0013] <Method for Manufacturing an Electronic Device> The method for manufacturing an electronic device according to this embodiment will be described below. Figures 3 and 4 are schematic cross-sectional views showing an example of a method for manufacturing an electronic device according to an embodiment of the present invention when the adhesive film 50 is a single-sided adhesive film. Figures 5 and 6 are schematic cross-sectional views showing an example of a method for manufacturing an electronic device according to an embodiment of the present invention when the adhesive film 50 is a double-sided adhesive film. The method for manufacturing an electronic device according to this embodiment includes, in this order, the steps of: preparing a structure 100 comprising an adhesive film 50 having a base layer 10 and a photocurable adhesive resin layer (A), and a semiconductor chip 70 directly attached to the adhesive resin layer (A) of the adhesive film 50; irradiating the structure 100 with light from the semiconductor chip 70 side; and sealing the semiconductor chip 70 with a sealing material 60.

[0014] According to the manufacturing method of the electronic device of this embodiment, by irradiating the structure 100 with light from the semiconductor chip 70 side before the step of sealing the semiconductor chip 70 with the sealing material 60, chip shift, standoff, and adhesive residue on the surface of the sealing layer can be suppressed. Here, chip shift refers to the phenomenon in which the position of the semiconductor chip shifts horizontally due to the pressure of the sealing material when the semiconductor chip is placed on an adhesive film and sealed with the sealing material. Standoff refers to a sealing defect caused by the semiconductor chip sinking into the adhesive film due to the pressure of the sealing material when the semiconductor chip is sealed with the sealing material. Adhesive residue on the surface of the sealing layer refers to the phenomenon in which, when the adhesive film is peeled off from the semiconductor chip, a part of the adhesive resin layer in the adhesive film peels off from the base layer, and a part of the peeled adhesive resin layer remains on the surface of the sealing layer. In order to improve the adhesive strength of the adhesive film, increasing the thickness of the adhesive resin layer or lowering the elastic modulus of the adhesive resin layer tends to improve chip shift, but standoff and adhesive residue on the surface of the sealing layer tend to worsen. In other words, the inventors' research revealed that there is a trade-off relationship between chip shift and adhesive residue on the standoff and sealing layer surfaces. The inventors diligently conducted research to achieve the above objectives and found that chip shift, standoff, and adhesive residue on the sealing layer surface can be suppressed by a manufacturing method that includes specific steps.

[0015] Specifically, by irradiating the structure 100 with light from the semiconductor chip 70 side before the process of sealing the semiconductor chip 70 with the sealing material 60, the portion of the adhesive resin layer (A) that will come into contact with the sealing material 60 in a later process is hardened, thereby reducing the adhesive strength in advance. This suppresses the residue of adhesive on the surface of the sealing layer. Furthermore, when light is irradiated from the semiconductor chip 70 side, the light is blocked by the semiconductor chip 70 in the center of the back surface of the semiconductor chip 70 (the part where the adhesive resin layer (A) and the semiconductor chip 70 are in contact), making it difficult for the adhesive resin layer (A) to harden. As a result, the adhesive strength does not decrease in the center of the back surface of the semiconductor chip 70, and the semiconductor chip 70 can be stably fixed on the adhesive resin layer (A), thereby suppressing chip shift. In addition, at the outer edge of the semiconductor chip 70, the adhesive resin layer (A) hardens due to the small amount of light that reaches it at an oblique angle. This improves the rigidity of the adhesive resin layer (A) in contact with the outer edge of the semiconductor chip 70, and suppresses standoff, which is the phenomenon in which the semiconductor chip 70 sinks into the adhesive resin layer (A). For these reasons, according to the manufacturing method of the electronic device of this embodiment, by irradiating the structure 100 with light from the semiconductor chip 70 side before the step of sealing the semiconductor chip 70 with the sealing material 60, chip shift, standoff, and adhesive residue on the surface of the sealing layer can be suppressed.

[0016] The following describes each step in the manufacturing method of the electronic device according to this embodiment.

[0017] [Steps for preparing the structure 100] First, as shown in Figures 3(a) and 5(a), a structure 100 is prepared, comprising an adhesive film 50 having a base layer 10 and a photocurable adhesive resin layer (A), and a semiconductor chip 70 directly attached to the adhesive resin layer (A) of the adhesive film 50. Such a structure 100 can be obtained by placing the semiconductor chip 70 on the adhesive resin layer (A) of the adhesive film 50.

[0018] (Semiconductor chip 70) Examples of semiconductor chips 70 include ICs, LSIs, discrete components, light-emitting diodes, photodetectors, etc. Furthermore, the manufacturing method of the electronic device in this embodiment can also be applied to semiconductor panels, semiconductor packages, semiconductor wafers, semiconductor substrates, etc., instead of semiconductor chips 70.

[0019] The surface of the semiconductor chip 70 preferably has an uneven surface. The uneven surface preferably includes electrodes such as concave electrodes or convex electrodes, and more preferably includes convex electrodes. In this case, the electrodes are, for example, those that are joined to electrodes formed on the mounting surface when mounting an electronic device to a mounting surface, forming an electrical connection between the electronic device and the mounting surface (mounting surface such as a printed circuit board). The electrodes preferably include one or more types of bump electrodes selected from the group consisting of ball bumps, printed bumps, stud bumps, plated bumps, and pillar bumps. That is, the uneven surface of this embodiment preferably includes bump electrodes. The type of metal constituting the bump electrodes is not particularly limited, and preferably includes one or more types selected from the group consisting of silver, gold, copper, tin, lead, or bismuth and alloys thereof.

[0020] When the uneven structure of this embodiment includes bump electrodes, if the height of the bump electrodes is H [μm] and the thickness of the adhesive resin layer (A) is d [μm], then H / d is preferably 1 or less, more preferably 0.85 or less, and even more preferably 0.7 or less. When H / d is below the above upper limit, the thickness of the adhesive film 50 can be made thinner while improving the unevenness absorption performance. The lower limit of H / d is not particularly limited, but for example, it is 0.01 or more. The height of the bump electrodes is generally 2 μm or more and 600 μm or less.

[0021] (Adhesive Film 50) Figures 1 and 2 are schematic cross-sectional views showing an example of the structure of the adhesive film 50 of this embodiment. As shown in Figure 1, the adhesive film 50 of this embodiment comprises a base layer 10 and a photocurable adhesive resin layer (A). The adhesive film 50 shown in Figure 1 is a single-sided adhesive film that adheres to only one side.

[0022] The overall thickness of the adhesive film 50 in this embodiment is preferably 10 μm to 1000 μm, and more preferably 20 μm to 500 μm, from the viewpoint of balancing mechanical properties and handling ease.

[0023] Next, each layer constituting the adhesive film 50 of this embodiment will be described.

[0024] (Base layer) The base layer 10 is a layer provided for the purpose of improving the handling properties, mechanical properties, heat resistance, and other properties of the adhesive film 50.

[0025] The substrate layer 10 preferably has light transmittance, from the viewpoint of further suppressing chip shift, standoff, adhesive residue on the surface of the sealing layer, and adhesive residue on the surface of the semiconductor chip 70.

[0026] Examples of resins constituting the base layer 10 include well-known thermoplastic resins. For example, one or more selected from the group consisting of polyethylene, polypropylene, poly(4-methyl-1-pentene), poly(1-butene), etc.: polyolefins; polyethylene terephthalate, polybutylene terephthalate, polyethylene naphthalate, etc.; polyamides such as nylon-6, nylon-66, polymetaxylene adipamide; polyacrylate; polymethacrylate; polyvinyl chloride; polyvinylidene chloride; polyimide; polyetherimide; ethylene-vinyl acetate copolymer; polyacrylonitrile; polycarbonate; polystyrene; ionomer; polysulfone; polyethersulfone; polyphenylene ether, etc. Among these, the base layer 10 preferably contains one or more selected from the group consisting of polyolefin, polyethylene terephthalate, polybutylene terephthalate, polyethylene naphthalate, ethylene vinyl acetate copolymer, polyamide, and polyimide, from the viewpoint of having an excellent balance of transparency, mechanical strength, and price, and more preferably contains one or more selected from the group consisting of polyethylene terephthalate and polyethylene naphthalate.

[0027] The base layer 10 may be a single layer or two or more layers. The resin film used to form the base layer 10 may be a stretched film or a film stretched in one or two axes, but from the viewpoint of improving the mechanical strength of the base layer 10, it is preferable to use a film stretched in one or two axes.

[0028] The thickness of the substrate layer 10 is preferably 1 μm to 500 μm, more preferably 5 μm to 300 μm, and even more preferably 10 μm to 250 μm, from the viewpoint of further suppressing chip shift, standoff, adhesive residue on the surface of the sealing layer, and adhesive residue on the surface of the semiconductor chip 70. The substrate layer 10 may be surface-treated to improve adhesion with other layers. Specifically, corona treatment, plasma treatment, undercoat treatment, primer coat treatment, etc., may be performed.

[0029] (Adhesive resin layer (A)) The adhesive resin layer (A) is a layer provided on one side of the base layer 10. The adhesive resin layer (A) is a layer that contacts the surface of the semiconductor chip 70 and temporarily fixes the semiconductor chip 70 when the semiconductor chip 70 is sealed with an encapsulating material in the manufacturing process of an electronic device.

[0030] The adhesive resin layer (A) preferably contains an adhesive resin (A1). The adhesive resin (A1) preferably contains one or more selected from the group consisting of (meth)acrylic adhesive resin (a), silicone adhesive resin, urethane adhesive resin, olefin adhesive resin, and styrene adhesive resin. Among these, the adhesive resin (A1) preferably contains (meth)acrylic adhesive resin (a) from the viewpoint of easily adjusting the adhesive strength.

[0031] The adhesive resin layer (A) is a photocurable adhesive resin layer that can be crosslinked by light to reduce its adhesive strength. When the photocurable adhesive resin layer is irradiated with light, it crosslinks and its adhesive strength is significantly reduced, making it easier to peel the adhesive film 50 from the semiconductor chip 70. Examples of light include ultraviolet rays, infrared rays, X-rays, gamma rays, etc., with ultraviolet rays being preferred. The photocurable adhesive resin layer preferably includes an ultraviolet crosslinkable adhesive resin layer.

[0032] Examples of the (meth)acrylic adhesive resin (a) include homopolymers of (meth)acrylic acid ester compounds and copolymers of (meth)acrylic acid ester compounds and comonomers. The (meth)acrylic acid ester compound preferably includes one or more selected from the group consisting of methyl (meth)acrylate, ethyl (meth)acrylate, butyl (meth)acrylate, 2-ethylhexyl (meth)acrylate, hydroxyethyl (meth)acrylate, hydroxypropyl (meth)acrylate, dimethylaminoethyl (meth)acrylate, and glycidyl (meth)acrylate. The comonomer constituting the copolymer of the (meth)acrylic acid ester compound and comonomer preferably includes one or more selected from the group consisting of vinyl acetate, (meth)acrylonitrile, styrene, (meth)acrylic acid, itaconic acid, (meth)acrylamide, methylol (meth)acrylamide, and maleic anhydride.

[0033] The adhesive resin layer (A) preferably comprises a (meth)acrylic adhesive resin (a) having polymerizable carbon-carbon double bonds in its molecule, a photoinitiator, and, if necessary, an adhesive obtained by crosslinking the (meth)acrylic adhesive resin (a) with a crosslinking agent. The adhesive resin layer (A) may further contain a low molecular weight compound having two or more polymerizable carbon-carbon double bonds in its molecule.

[0034] A (meth)acrylic adhesive resin (a) having a polymerizable carbon-carbon double bond in its molecule is specifically obtained as follows: First, a monomer having an ethylenic double bond and a copolymerizable monomer having a functional group (P) are copolymerized. Next, the functional group (P) contained in this copolymer is reacted with a monomer having a functional group (Q) that can undergo addition reactions, condensation reactions, etc., with the functional group (P), while leaving the double bond in the monomer intact, thereby introducing a polymerizable carbon-carbon double bond into the copolymer molecule.

[0035] The monomer having an ethylenically double bond preferably includes one or more monomers selected from the group consisting of alkyl acrylate monomers such as methyl (meth)acrylate, 2-ethylhexyl (meth)acrylate, butyl (meth)acrylate, and ethyl (meth)acrylate, vinyl esters such as vinyl acetate, and monomers having an ethylenically double bond such as meth)acrylonitrile, meth)acrylamide, and styrene.

[0036] The copolymerizable monomer having the above-mentioned functional group (P) preferably includes one or more selected from the group consisting of (meth)acrylic acid, maleic acid, 2-hydroxyethyl (meth)acrylate, glycidyl (meth)acrylate, N-methylol(meth)acrylamide, and (meth)acryloyloxyethyl isocyanate. The ratio of the monomer having the above-mentioned ethylenically double bond to the copolymerizable monomer having the functional group (P) is preferably 70% to 99% by mass for the monomer having the ethylenically double bond and 1% to 30% by mass for the copolymerizable monomer having the functional group (P). More preferably, the monomer having the ethylenically double bond is 80% to 95% by mass and the copolymerizable monomer having the functional group (P) is 5% to 20% by mass. Examples of monomers having the above-mentioned functional group (Q) include monomers similar to those having the above-mentioned copolymerizable monomer having the functional group (P).

[0037] When introducing a polymerizable carbon-carbon double bond into a copolymer of a monomer having an ethylenically double bond and a copolymerizable monomer having a functional group (P), the preferred combinations of functional group (P) and functional group (Q) to be reacted are those that readily undergo addition reactions, such as a carboxyl group and an epoxy group, a carboxyl group and an aziridyl group, or a hydroxyl group and an isocyanate group. Furthermore, any reaction that readily introduces a polymerizable carbon-carbon double bond, such as a condensation reaction between a carboxylic acid group and a hydroxyl group, may be used, not limited to addition reactions.

[0038] Low molecular weight compounds having two or more polymerizable carbon-carbon double bonds in their molecules preferably include one or more selected from the group consisting of tripropylene glycol di(meth)acrylate, trimethylolpropane tri(meth)acrylate, tetramethylolmethane tetraacrylate, pentaerythritol tetra(meth)acrylate, dipentaerythritol monohydroxypenta(meth)acrylate, dipentaerythritol hexa(meth)acrylate, and ditrimethylolpropane tetraacrylate. The content of the low molecular weight compound having two or more polymerizable carbon-carbon double bonds in its molecule is preferably 0.1 parts by mass to 20 parts by mass, more preferably 5 parts by mass to 18 parts by mass, when the content of the above (meth)acrylic adhesive resin (a) in the adhesive resin layer (A) is 100 parts by mass.

[0039] Polymerization reaction mechanisms for (meth)acrylic adhesive resin (a) include radical polymerization, anionic polymerization, and cationic polymerization. Considering the manufacturing cost of (meth)acrylic adhesive resin (a), the influence of monomer functional groups, and the influence of ions on the semiconductor chip surface, polymerization by radical polymerization is preferred. When polymerization is carried out by radical polymerization, preferred radical polymerization initiators include benzoyl peroxide, di-t-butyl peroxide, dicumyl peroxide, 3,3,5-trimethylhexanoyl peroxide, di-2-ethylhexyl peroxydicarbonate, methyl ethyl ketone peroxide, t-butyl peroxyphthalate, t-butyl peroxybenzoate, di-t-butyl peroxyacetate, t-butyl peroxyisobutyrate, t-butyl peroxy-2-hexanoate, and t-butyl peroxy-2-ethyl It comprises one or more selected from the group consisting of organic peroxides such as hexanoates, t-butylperoxy-3,5,5-trimethylhexanoate, acetyl peroxide, isobutyryl peroxide, octanoyl peroxide, t-butyl peroxide, and di-t-amyl peroxide; inorganic peroxides such as ammonium persulfate, potassium persulfate, and sodium persulfate; and azo compounds such as 2,2'-azobisisobutyronitrile, 2,2'-azobis-2-methylbutyronitrile, and 4,4'-azobis-4-cyanovaleric acid.

[0040] The photoinitiator preferably contains one or more selected from the group consisting of benzoin, isopropyl benzoin ether, isobutyl benzoin ether, benzophenone, Michler's ketone, chlorothioxanthone, dodecyl thioxanthone, dimethyl thioxanthone, diethyl thioxanthone, acetophenone diethyl ketal, benzyl dimethyl ketal, 1-hydroxycyclohexyl phenyl ketone, 2-hydroxy-2-methyl-1-phenylpropan-1-one, 2-benzyl-2-dimethylamino-4'-morpholinobutyrophenone, 2,2-dimethoxy-2-phenylacetophenone, and 2-dimethylamino-2-(4-methylbenzyl)-1-(4-morpholin-4-yl-phenyl)butan-1-one.

[0041] When the content of the above (meth)acrylic adhesive resin (a) in the adhesive resin layer (A) is 100 parts by mass, the content of the photoinitiator is preferably 0.1 part by mass or more and 15 parts by mass or less, more preferably 1 part by mass or more and 10 parts by mass or less, and still more preferably 4 parts by mass or more and 10 parts by mass or less.

[0042] The adhesive resin layer (A) preferably contains a crosslinking agent. The crosslinking agent preferably contains one or more selected from the group consisting of epoxy compounds such as sorbitol polyglycidyl ether, polyglycerol polyglycidyl ether, pentaerythritol polyglycidyl ether, and diglycerol polyglycidyl ether; aziridine compounds such as tetramethylol methane-tri-β-aziridinylpropionate, trimethylolpropane-tri-β-aziridinylpropionate, N,N'-diphenylmethane-4,4'-bis(1-aziridinecarboxamide), and N,N'-hexamethylene-1,6-bis(1-aziridinecarboxamide); and isocyanate compounds such as tetramethylene diisocyanate, hexamethylene diisocyanate, and polyisocyanate.

[0043] The content of the crosslinking agent is usually preferably in a range such that the number of functional groups in the crosslinking agent does not exceed the number of functional groups in the (meth)acrylic adhesive resin (a). However, when new functional groups are generated by the crosslinking reaction or when the crosslinking reaction is slow, etc., it may be contained in excess as necessary. From the viewpoint of improving the balance between the heat resistance and the adhesive strength of the adhesive resin layer (A), when the content of the above-mentioned (meth)acrylic adhesive resin (a) in the adhesive resin layer (A) is 100 parts by mass, the content of the crosslinking agent in the adhesive resin layer (A) is preferably 0.1 part by mass or more and 15 parts by mass or less, more preferably 0.5 part by mass or more and 5 parts by mass or less.

[0044] In addition, in the adhesive film 50 of the present embodiment, from the viewpoint of being able to stably hold the semiconductor chip 70 when peeling the support substrate 80 from the adhesive film 50, when the total content of the gas generation component and the thermally expandable microspheres in the adhesive resin layer (A) is 100% by mass of the whole adhesive resin layer (A), it is preferably 0.1% by mass or less, more preferably 0.05% by mass or less, still more preferably 0.01% by mass or less, and still more preferably the adhesive resin layer (A) substantially does not contain the gas generation component and the thermally expandable microspheres, and still more preferably the adhesive resin layer (A) does not contain the gas generation component and the thermally expandable microspheres.

[0045] The adhesive resin layer (A) may be a single layer or a multilayer. From the viewpoint of being able to further suppress chip shift, standoff, glue residue on the surface of the sealing layer, and glue residue on the surface of the semiconductor chip 70, the thickness of the adhesive resin layer (A) is preferably 1 μm or more and 100 μm or less, more preferably 3 μm or more and 50 μm or less, still more preferably 5 μm or more and 30 μm or less.

[0046] The adhesive resin layer (A) can be formed, for example, on the substrate layer 10, or, if the adhesive film of this embodiment includes a surface-absorbing resin layer (C) described later, on the surface-absorbing resin layer (C) by applying an adhesive. The adhesive may be dissolved in a solvent and applied as a coating solution, applied as an aqueous emulsion, or applied directly as a liquid adhesive. In particular, the adhesive for forming the adhesive resin layer (A) is preferably an adhesive coating solution obtained by dissolving the adhesive in an organic solvent. The organic solvent is not particularly limited and may be appropriately selected from known ones in consideration of solubility and drying time. Examples of organic solvents include esters such as ethyl acetate and methyl acetate; ketones such as acetone and MEK; aromatics such as benzene, toluene, and ethylbenzene; linear or cyclic aliphatic solvents such as heptane, hexane, and cyclohexane; and alcohols such as isopropanol and butanol. The organic solvent preferably includes one or more selected from the group consisting of ethyl acetate and toluene. These solvents may be used individually or in mixtures of two or more.

[0047] Conventional coating methods such as the roll coater method, reverse roll coater method, gravure roll method, bar coat method, comma coater method, and die coater method can be used for applying the adhesive coating solution. There are no particular restrictions on the drying conditions of the applied adhesive, but generally, it is preferable to dry it at a temperature range of 80 to 200°C for 10 seconds to 10 minutes. It is even more preferable to dry it at 80 to 170°C for 15 seconds to 5 minutes. In order to sufficiently promote the crosslinking reaction between the crosslinking agent and the adhesive, the adhesive coating solution may be heated at 40 to 80°C for about 5 to 300 hours after the drying is complete.

[0048] Furthermore, the base material layer 10 and the adhesive resin layer (A) may be formed by co-extrusion molding, or they may be formed by laminating (layering) a film-like base material layer 10 and a film-like adhesive resin layer (A).

[0049] (Adhesive resin layer (B)) For example, as shown in Figure 2, the adhesive film 50 of this embodiment preferably further comprises an adhesive resin layer (B) on the side opposite to the adhesive resin layer (A) of the base layer 10, from the viewpoint of further suppressing chip shift, standoff, adhesive residue on the surface of the sealing layer and adhesive residue on the surface of the semiconductor chip 70. When the adhesive film 50 of this embodiment comprises an adhesive resin layer (B), the adhesive film 50 of this embodiment is a double-sided adhesive film in which both sides are adhesive.

[0050] The adhesive resin layer (B) is preferably a layer whose adhesive strength decreases with heat treatment. This allows the adhesive film 50 to be easily peeled off the support substrate by heat treatment. The adhesive resin layer (B) preferably contains a heat-expandable adhesive. This makes the adhesive resin layer (B) a layer whose adhesive strength decreases with heat treatment. The heat-expandable adhesive preferably includes one or more selected from the group consisting of a heat-expandable adhesive containing a gas-generating component, a heat-expandable adhesive containing heat-expandable microspheres, and a heat-expandable adhesive whose adhesive strength decreases due to a crosslinking reaction of adhesive components by heat, and more preferably includes one or more selected from the group consisting of a heat-expandable adhesive containing a gas-generating component and a heat-expandable adhesive containing heat-expandable microspheres.

[0051] The heat-expandable adhesive in the adhesive resin layer (B) is preferably an adhesive whose adhesive strength decreases or is lost when heated to a temperature above 150°C, more preferably above 170°C. For example, a material can be selected that does not peel off at 150°C or below or 170°C or below, but peels off at 150°C or above 170°C, and it is preferable that the adhesive strength is such that the adhesive film 50 does not peel off from the support substrate during the manufacturing process of the electronic device. Here, the decrease or loss of adhesive strength when heated above 150°C or above 170°C can be evaluated, for example, by attaching the adhesive resin layer (B) to a stainless steel plate, performing a heat treatment at 140°C for 1 hour, and then measuring the peel strength from the stainless steel plate after heating at a temperature above 150°C or above 170°C for 2 minutes. The specific heating temperature when heating at a temperature above 150°C or above 170°C is set to a temperature higher than the temperature at which gas is generated or the temperature at which thermally expandable microspheres expand, and is set appropriately depending on the type of gas generated or thermally expandable microspheres. In this embodiment, loss of adhesive strength refers to a case where, for example, the 180° peel strength measured under conditions of 23°C and a tensile speed of 300 mm / min falls to less than 0.5 N / 25 mm.

[0052] Examples of gas-generating components used in heat-expandable adhesives include azo compounds, azide compounds, and meldramic acid derivatives. In addition, inorganic foaming agents such as ammonium carbonate, ammonium bicarbonate, sodium bicarbonate, ammonium nitrite, sodium boro hydroxide, and various azides can be used; water; fluorinated alkane compounds such as trichloromonofluoromethane and dichloromonofluoromethane; azo compounds such as azobisisobutyronitrile, azodicarbonamide, and barium azodicarboxylate; p-toluenesulfonyl hydrazide, diphenylsulfone-3,3'-disulfonyl hydrazide, and 4,4'-oxybis(benzene) Organic blowing agents such as hydrazine compounds (e.g., benzenesulfonyl hydrazide, allylbis(sulfonyl hydrazide)), semicarbazide compounds (e.g., p-toluenesulfonyl semicarbazide, 4,4'-oxybis(benzenesulfonyl semicarbazide)), triazole compounds (e.g., 5-morpholyl-1,2,3,4-thiatriazole), and N-nitroso compounds (e.g., N,N'-dinitrosopentamethylenetetramine, N,N'-dimethyl-N,N'-dinitrosotelephthalamide) can also be used. The gas generating component may be added to the adhesive resin (B1) or directly bonded to the adhesive resin (B1).

[0053] For use in heat-expandable adhesives, for example, microencapsulated foaming agents can be used as heat-expandable microspheres. Examples of such heat-expandable microspheres include microspheres in which a substance that readily gasifies and expands upon heating, such as isobutane, propane, or pentane, is enclosed within an elastic shell. Examples of materials constituting the shell include vinylidene chloride-acrylonitrile copolymer, polyvinyl alcohol, polyvinyl butyral, polymethyl methacrylate, polyacrylonitrile, polyvinylidene chloride, and polysulfone. Heat-expandable microspheres can be manufactured, for example, by coacervation or interfacial polymerization. Heat-expandable microspheres can be added to adhesive resin (B1).

[0054] The content of at least one selected from the gas-generating component and the thermally expandable microspheres can be appropriately set according to the expansion ratio and adhesion reduction of the heat-peelable adhesive resin layer (B), and is not particularly limited, but for example, the content is preferably 1 to 150 parts by mass, more preferably 10 to 130 parts by mass, and even more preferably 12 to 100 parts by mass, per 100 parts by mass of the adhesive resin (B1) in the heat-peelable adhesive resin layer (B). The adhesive resin layer (B) of this embodiment is designed so that the temperature at which gas is generated and the temperature at which the thermally expandable microspheres thermally expand are preferably above 150°C, more preferably above 170°C.

[0055] Examples of adhesive resins (B1) that constitute the heat-expandable adhesive include (meth)acrylic adhesive resins (b), urethane adhesive resins, silicone adhesive resins, polyolefin adhesive resins, polyester adhesive resins, polyamide adhesive resins, fluorine adhesive resins, and styrene-diene block copolymer adhesive resins. Among these, (meth)acrylic adhesive resins (b) are preferred.

[0056] Examples of the (meth)acrylic adhesive resin (b) used in the adhesive resin layer (B) include copolymers comprising (meth)acrylate alkyl ester monomer units (b1) and monomer units (b2) having functional groups that can react with a crosslinking agent. In this embodiment, (meth)acrylate alkyl ester means alkyl acrylate, alkyl methacrylate, or a mixture thereof.

[0057] (Meth)acrylic adhesive resin (b) can be obtained, for example, by copolymerizing a monomer mixture containing an alkyl (meth)acrylate monomer (b1) and a monomer (b2) having a functional group that can react with a crosslinking agent.

[0058] Examples of monomers (b1) that form the alkyl (meth)acrylate monomer unit (b1) include alkyl (meth)acrylates having an alkyl group with approximately 1 to 12 carbon atoms. Preferably, alkyl (meth)acrylates having an alkyl group with 1 to 8 carbon atoms are used. Specifically, examples include methyl acrylate, methyl methacrylate, ethyl acrylate, ethyl methacrylate, butyl acrylate, butyl methacrylate, 2-ethylhexyl acrylate, 2-ethylhexyl methacrylate, etc. These may be used individually or in combination of two or more. In the (meth)acrylic adhesive resin (b), the content of alkyl (meth)acrylate monomer unit (b1) is preferably 10% to 98.9% by mass, more preferably 50% to 97% by mass, and even more preferably 85% to 95% by mass, when the total amount of all monomer units in the (meth)acrylic adhesive resin (b) is taken as 100% by mass.

[0059] Examples of monomers (b2) that form monomers (b2) having functional groups that can react with a crosslinking agent include acrylic acid, methacrylic acid, itaconic acid, mesaconic acid, citraconic acid, fumaric acid, maleic acid, monoalkyl itaconic acid, monoalkyl mesaconic acid, monoalkyl citraconic acid, monoalkyl fumaric acid, monoalkyl maleic acid, glycidyl acrylate, glycidyl methacrylate, 2-hydroxyethyl acrylate, 2-hydroxyethyl methacrylate, acrylamide, methacrylamide, tert-butylaminoethyl acrylate, tert-butylaminoethyl methacrylate, etc. Preferably, acrylic acid, methacrylic acid, 2-hydroxyethyl acrylate, 2-hydroxyethyl methacrylate, acrylamide, methacrylamide, etc. These may be used individually or in combination of two or more. In the (meth)acrylic adhesive resin (b) of this embodiment, the content of monomer units (b2) is preferably 1% by mass or more and 40% by mass or less, more preferably 1% by mass or more and 20% by mass or less, and even more preferably 1% by mass or more and 10% by mass or less, when the total amount of all monomer units in the (meth)acrylic adhesive resin (b) is taken as 100% by mass.

[0060] The (meth)acrylic adhesive resin (b) may further contain, in addition to monomer units (b1) and monomer units (b2), a bifunctional monomer unit (b3) and a specific comonomer having surfactant properties (hereinafter referred to as polymerizable surfactant). The polymerizable surfactant has the property of copolymerizing with monomers (b1), (b2), and (b3), and also acts as an emulsifier when emulsion polymerization occurs.

[0061] Examples of monomers (b3) that form a bifunctional monomer unit (b3) include allyl methacrylate, allyl acrylate, divinylbenzene, vinyl methacrylate, vinyl acrylate, trimethylolpropane tri(meth)acrylate, pentaerythritol tri(meth)acrylate, dipentaerythritol hexa(meth)acrylate, tetraethylene glycol di(meth)acrylate, and, for example, monomers with diacrylates at both ends. Other examples include dimethacrylates in which the main chain structure is of the propylene glycol type (e.g., manufactured by Nippon Oil & Fats Co., Ltd.; trade names: PDP-200, PDP-400, ADP-200, ADP-400), the tetramethylene glycol type (e.g., manufactured by Nippon Oil & Fats Co., Ltd.; trade names: ADT-250, ADT-850), and mixed forms thereof (e.g., manufactured by Nippon Oil & Fats Co., Ltd.; trade names: ADET-1800, ADPT-4000).

[0062] In the (meth)acrylic adhesive resin (b), the content of monomer units (b3) is preferably 0.1% by mass or more and 30% by mass or less, more preferably 0.1% by mass or more and 20% by mass or less, even more preferably 0.1% by mass or more and 15% by mass or less, and even more preferably 0.1% by mass or more and 5% by mass or less, when the total amount of all monomer units in the (meth)acrylic adhesive resin (b) is taken as 100% by mass.

[0063] Examples of polymerizable surfactants include, for example, those in which a polymerizable 1-propenyl group is introduced to the benzene ring of polyoxyethylene nonylphenyl ether (manufactured by Daiichi Kogyo Seiyaku Co., Ltd.; product names: Aqualon RN-10, RN-20, RN-30, RN-50, etc.), those in which a polymerizable 1-propenyl group is introduced to the benzene ring of the ammonium salt of the sulfate ester of polyoxyethylene nonylphenyl ether (manufactured by Daiichi Kogyo Seiyaku Co., Ltd.; product names: Aqualon HS-10, HS-20, HS-1025, etc.), and sulfosuccinate diesters having a polymerizable double bond in the molecule (manufactured by Kao Corporation; product names: Latemul S-120A, S-180A, etc.). In the (meth)acrylic adhesive resin (b), the content of polymerizable surfactant is preferably 0.1% to 30% by mass, more preferably 0.1% to 20% by mass, even more preferably 0.1% to 15% by mass, and even more preferably 0.1% to 5% by mass, when the total amount of all monomer units in the (meth)acrylic adhesive resin (b) is taken as 100% by mass.

[0064] The (meth)acrylic adhesive resin (b) may further optionally contain monomer units formed from monomers having polymerizable double bonds, such as vinyl acetate, acrylonitrile, and styrene.

[0065] Polymerization reaction mechanisms for (meth)acrylic adhesive resin (b) include radical polymerization, anionic polymerization, and cationic polymerization. Considering the manufacturing cost of (meth)acrylic adhesive resin (b), the influence of monomer functional groups, and the influence of ions on the surface of electronic components, polymerization by radical polymerization is preferred. When polymerization is carried out by radical polymerization reaction, benzoyl peroxide, di-t-butyl peroxide, dicumyl peroxide, 3,3,5-trimethylhexanoyl peroxide, di-2-ethylhexyl peroxydicarbonate, methyl ethyl ketone peroxide, t-butyl peroxyphthalate, t-butyl peroxybenzoate, di-t-butyl peroxyacetate, t-butyl peroxyisobutyrate, t-butyl peroxy-2-hexanoate, t-butyl peroxy Examples include organic peroxides such as c-2-ethylhexanoate, t-butylperoxy-3,5,5-trimethylhexanoate, acetyl peroxide, isobutyryl peroxide, octanoyl peroxide, t-butyl peroxide, and di-t-amyl peroxide; inorganic peroxides such as ammonium persulfate, potassium persulfate, and sodium persulfate; and azo compounds such as 2,2'-azobisisobutyronitrile, 2,2'-azobis-2-methylbutyronitrile, and 4,4'-azobis-4-cyanovaleric acid.

[0066] When polymerization is carried out by emulsion polymerization, among these radical polymerization initiators, water-soluble inorganic peroxides such as ammonium persulfate, potassium persulfate, and sodium persulfate, and water-soluble azo compounds having a carboxyl group in the molecule, such as 4,4'-azobis-4-cyanovaleric acid, are preferred. Considering the effect of ions on the surface of electronic components, azo compounds having a carboxyl group in the molecule, such as ammonium persulfate and 4,4'-azobis-4-cyanovaleric acid, are even more preferred, and azo compounds having a carboxyl group in the molecule, such as 4,4'-azobis-4-cyanovaleric acid, are even more preferred.

[0067] The adhesive resin layer (B) preferably further comprises an adhesive resin (B1) and a crosslinking agent (B2) having two or more crosslinkable functional groups per molecule. The crosslinking agent (B2) having two or more crosslinkable functional groups per molecule is used to react with the functional groups of the adhesive resin (B1) to adjust the adhesive strength and cohesive strength. Examples of such crosslinking agents (B2) include epoxy compounds such as sorbitol polyglycidyl ether, polyglycerol polyglycidyl ether, pentaerythritol polyglycidyl ether, diglycerol polyglycidyl ether, glycerol polyglycidyl ether, neopentyl glycol diglycidyl ether, and resolcin diglycidyl ether; isocyanate compounds such as tetramethylene diisocyanate, hexamethylene diisocyanate, trimethylolpropane toluene diisocyanate 3 adduct, polyisocyanates, diphenylmethane diisocyanate, and tolylene diisocyanate; and trimethylolpropane-tri-β-aziridinylpropio Examples include aziridine compounds such as nate, tetramethylolmethane-tri-β-aziridinylpropionate, N,N'-diphenylmethane-4,4'-bis(1-aziridinecarboxamide), N,N'-hexamethylene-1,6-bis(1-aziridinecarboxamide), N,N'-toluene-2,4-bis(1-aziridinecarboxamide), and trimethylolpropane-tri-β-(2-methylaziridine)propionate; tetrafunctional epoxy compounds such as N,N,N',N'-tetraglycidyl-m-xylenediamine and 1,3-bis(N,N'-diglycidylaminomethyl)cyclohexane; and melamine compounds such as hexamethoxymethylolmelamine. These may be used individually or in combination of two or more. Among these, the crosslinking agent (B2) preferably includes one or more selected from the group consisting of epoxy compounds, isocyanate compounds, and aziridine compounds.

[0068] The crosslinking agent (B2) content is preferably within a range where the number of functional groups in the crosslinking agent (B2) does not exceed the number of functional groups in the adhesive resin (B1). However, it may be included in excess as needed, such as when new functional groups are generated in the crosslinking reaction or when the crosslinking reaction is slow. The crosslinking agent (B2) content in the adhesive resin layer (B) is preferably 0.1 parts by mass or more and 10 parts by mass or less, more preferably 0.5 parts by mass or more and 5 parts by mass or less, per 100 parts by mass of the adhesive resin (B1).

[0069] The adhesive resin layer (B) preferably contains a tackifying resin in addition to the adhesive resin (B1) from the viewpoint of improving adhesion to the support substrate. Including a tackifying resin in the adhesive resin layer (B) is preferable because it makes it easier to adjust the adhesion to the support substrate at or near room temperature. The tackifying resin preferably has a softening point of 100°C or higher. Specific examples of tackifying resins include rosin-based resins such as rosin derivatives that have been treated with esterification, etc.; terpene-based resins such as α-pinene-based, β-pinene-based, dipentene-based, and terpene phenol-based resins; natural rosins such as gum-based, wood-based, and tall oil-based rosins; petroleum resins obtained by treating these natural rosins with hydrogenation, disproportionation, polymerization, maleation, etc.; coumarone-indene resin, etc.

[0070] Among these, the softening point of the tackifying resin is more preferably in the range of 100 to 160°C, and even more preferably in the range of 120 to 150°C. Using a tackifying resin with a softening point within the above range not only reduces contamination and adhesive residue on the support substrate, but also further improves adhesion to the support substrate in the working environment. Furthermore, using a polymerized rosin ester-based tackifying resin not only reduces contamination and adhesive residue on the support substrate, but also improves adhesion to the support substrate in an environment of 80 to 130°C, and in the case of a heat-expandable adhesive containing thermally expandable microspheres, it becomes even easier to peel off from the support substrate after the thermally expandable microspheres have expanded.

[0071] The content of the tackifying resin can be appropriately selected so as to adjust the elastic modulus of the adhesive resin layer (B) to a desired predetermined numerical range, and there are no particular restrictions. However, from the perspective of the elastic modulus of the adhesive resin layer (B) and the initial peeling force, the content of the tackifying resin is preferably 1 part by mass or more and 100 parts by mass or less per 100 parts by mass of the adhesive resin (B1). If the content of the tackifying resin is above the lower limit per 100 parts by mass of the adhesive resin (B1), the adhesion to the support substrate during work tends to be good. On the other hand, if it is below the upper limit per 100 parts by mass, the adhesion to the support substrate at room temperature tends to be good. From the perspective of adhesion to the support substrate and adhesion at room temperature, the content of the tackifying resin is more preferably 2 parts by mass or more and 50 parts by mass or less per 100 parts by mass of the adhesive resin (B1). Furthermore, the acid value of the tackifying resin is preferably 30 or less. If the acid value of the tackifying resin is below the upper limit per 100 parts by mass, adhesive residue is less likely to be left on the support substrate when peeled off.

[0072] The adhesive resin layer (B) may also contain additives such as plasticizers as other components. The total content of adhesive resin (B1), crosslinking agent (B2), and tackifying resin in the adhesive resin layer (B) is preferably 50% by mass or more, more preferably 70% by mass or more, even more preferably 90% by mass or more, and even more preferably 95% by mass or more, when the total content of the adhesive resin layer (B) is considered as 100% by mass. Furthermore, if the adhesive resin layer (B) is composed of a heat-expandable adhesive, the total content of adhesive resin (B1), crosslinking agent (B2), tackifying resin, gas-generating component, and heat-expandable microspheres in the adhesive resin layer (B) is preferably 50% by mass or more, more preferably 70% by mass or more, even more preferably 90% by mass or more, and even more preferably 95% by mass or more, when the total content of the adhesive resin layer (B) is considered as 100% by mass.

[0073] The adhesive resin layer (B) may be a single layer or a multilayer layer. For example, by laminating two or more layers with different degrees of expansion due to heating to form the adhesive resin layer (B), the tackiness / thermal release properties can be changed between one side and the other side of the adhesive resin layer (B). From the viewpoint of further suppressing chip shift, standoff, adhesive residue on the surface of the sealing layer and adhesive residue on the surface of the semiconductor chip 70, the thickness of the adhesive resin layer (B) is preferably 3 μm to 300 μm, more preferably 10 μm to 200 μm, and even more preferably 20 μm to 150 μm.

[0074] The adhesive resin layer (B) can be formed, for example, by applying an adhesive coating liquid onto the base layer 10, or by transferring an adhesive resin layer (B) formed on a separator onto the base layer 10. Conventional coating methods such as the roll coater method, reverse roll coater method, gravure roll method, bar coat method, comma coater method, and die coater method can be used for applying the adhesive coating liquid. There are no particular restrictions on the drying conditions of the applied adhesive, but generally, it is preferable to dry it at a temperature range of 80 to 200°C for 10 seconds to 10 minutes. More preferably, it is dried at 80 to 170°C for 15 seconds to 5 minutes. To sufficiently promote the crosslinking reaction between the crosslinking agent and the adhesive, after the drying of the adhesive coating liquid is complete, it may be heated at 40 to 80°C for about 5 to 300 hours. Furthermore, the base material layer 10 and the adhesive resin layer (B) may be formed by co-extrusion molding, or the film-like base material layer 10 and the film-like adhesive resin layer (B) may be formed by lamination (layering).

[0075] (Unevenness-absorbing resin layer (C)) For example, as shown in Figure 2, the adhesive film 50 of this embodiment preferably further comprises an unevenness-absorbing resin layer (C) from the viewpoint of further suppressing chip shift, standoff, adhesive residue on the surface of the sealing layer, and adhesive residue on the surface of the semiconductor chip 70. The unevenness-absorbing resin layer (C) is preferably crosslinkable by one or two types selected from the group consisting of light energy and thermal energy from the viewpoint of further suppressing chip shift, standoff, adhesive residue on the surface of the sealing layer, and adhesive residue on the surface of the semiconductor chip 70. The unevenness-absorbing resin layer (C) is a layer provided for the purpose of improving the conformability of the adhesive film 50 to the semiconductor chip 70 and improving the adhesion between the semiconductor chip 70 and the adhesive film 50. Furthermore, the elastic modulus of the unevenness-absorbing resin layer (C) can be increased by crosslinking and curing the unevenness-absorbing resin layer (C) by one or two types selected from the group consisting of light energy and thermal energy. This makes it possible to suppress the semiconductor chip 70 from sinking into the adhesive film 50 during the process of sealing the semiconductor chip 70 with the sealing material 60. From the viewpoint of further suppressing chip shift, standoff, adhesive residue on the surface of the sealing layer, and adhesive residue on the surface of the semiconductor chip 70, the adhesive film 50 of this embodiment preferably comprises an unevenness-absorbing resin layer (C) between the base layer 10 and the adhesive resin layer (A) or between the base layer 10 and the adhesive resin layer (B), and more preferably comprises an unevenness-absorbing resin layer (C) between the base layer 10 and the adhesive resin layer (A).

[0076] The unevenness-absorbing resin layer (C) preferably contains a resin. The resin in the unevenness-absorbing resin layer (C) is not particularly limited as long as it exhibits unevenness-absorbing properties, but preferably contains one or more selected from the group consisting of (meth)acrylic resins, urethane resins, silicone resins, polyolefin resins, polyester resins, polyamide resins, fluororesins, and styrene-diene block copolymer resins.

[0077] The surface-absorbing resin layer (C) preferably contains a crosslinking agent. The crosslinking agent in the surface-absorbing resin layer (C) can be any agent that undergoes a crosslinking reaction with an activating species generated from the initiator described later, without any particular limitations. Examples of crosslinking agents include polyfunctional (meth)acrylate compounds and isocyanate compounds. More specifically, examples include urethane (meth)acrylate, trimethylolpropane tri(meth)acrylate, tetramethylolmethane tetra(meth)acrylate, pentaerythritol tri(meth)acrylate, pentaerythritol tetra(meth)acrylate, dipentaerythritol monohydroxypenta(meth)acrylate, dipentaerythritol hexa(meth)acrylate, 1,4-butanediol di(meth)acrylate, etc.; and isocyanate compounds such as tetramethylene diisocyanate, hexamethylene diisocyanate, trimethylolpropane toluene diisocyanate 3 adduct, polyisocyanates, diphenylmethane diisocyanate, and tolylene diisocyanate. In addition, various monomers or oligomers such as urethane, polyether, polyester, polycarbonate, and polybutadiene can be used as crosslinking agents. The crosslinking agent content is, for example, 5 parts by mass or more and 500 parts by mass or less, preferably 40 parts by mass or more and 150 parts by mass or less, per 100 parts by mass of resin in the unevenness-absorbing resin layer (C).

[0078] The surface-absorbing resin layer (C) preferably contains an initiator. The initiator in the surface-absorbing resin layer (C) preferably contains one or more selected from the group consisting of photoinitiators that generate activated species upon exposure to light and thermal initiators that generate activated species upon exposure to heat.

[0079] The photoinitiator in the surface-absorbing resin layer (C) is not particularly limited, as long as it is capable of crosslinking the resin and / or crosslinking agent in the surface-absorbing resin layer (C) by light energy. The chemical species generated from the photoinitiator may be appropriately selected based on the functional groups of the resin and / or crosslinking agent. The chemical species generated from the photoinitiator are typically radicals or cations.

[0080] Examples of photoinitiators that can be used include alkylphenone-based photoinitiators, acetophenone-based photoinitiators, oxime ester-based photoinitiators, benzoin ether-based photoinitiators, acylphosphine oxide-based photoinitiators, α-ketol-based photoinitiators, aromatic sulfonyl chloride-based photoinitiators, photoactive oxime-based photoinitiators, benzoin-based photoinitiators, benzyl-based photoinitiators, benzophenone-based photoinitiators, thioxanthone-based photoinitiators, and the like. One type of photoinitiator can be used alone or two or more types can be used in appropriate combinations. Among these, from the viewpoint of high reactivity and low sublimation, alkylphenone-based photoinitiators are preferred.

[0081] Specific examples of alkylphenone-based photoinitiators include 2-benzyl-2-(dimethylamino)-4'-morpholinobtyrophenone, 2,2-dimethoxy-1,2-diphenylethane-1-one, 1-hydroxycyclohexylphenyl ketone, 2-hydroxy-2-methyl-1-phenylpropan-1-one, 1-[4-(2-hydroxyethoxy)-phenyl]-2-hydroxy-2-methylpropan-1-one, and 2-hydroxy-1-{[4-(2-hydroxy-2-methylpropionyl)-benzyl]phenyl}-2-methylpropan-1-one. Specific examples of acetophenone-based photoinitiators include 1-hydroxycyclohexylphenyl-ketone, 4-phenoxydichloroacetophenone, 4-t-butyldichloroacetophenone, 1-[4-(2-hydroxyethoxy)phenyl]-2-hydroxy-2-methyl-1-propan-1-one, 2-hydroxy-2-methyl-1-phenyl-propan-1-one, and methoxyacetophenone. Specific examples of oxime ester-based photoinitiators include 1,2-octanedione, 1-[4-(phenylthio)phenyl]-2-(o-benzoyl oxime), ethanone, and 1-[9-ethyl-6-(2-methylbenzoyl)-9H-carbazole-3-yl]-1-(o-acetyl oxime). Specific examples of benzoin ether-based photoinitiators include benzoin ethers such as benzoin methyl ether, benzoin ethyl ether, benzoin propyl ether, benzoin isopropyl ether, and benzoin isobutyl ether, as well as substituted benzoin ethers such as anisole methyl ether. Specific examples of acylphosphine oxide-based photoinitiators include bis(2,4,6-trimethylbenzoyl)phenylphosphine oxide, bis(2,4,6-trimethylbenzoyl)-2,4-di-n-butoxyphenylphosphine oxide, 2,4,6-trimethylbenzoyldiphenylphosphine oxide, and bis(2,6-dimethoxybenzoyl)-2,4,4-trimethylpentylphosphine oxide. Specific examples of α-ketol-based photoinitiators include 2-methyl-2-hydroxypropiophenone and 1-[4-(2-hydroxyethyl)phenyl]-2-methylpropan-1-one.Specific examples of aromatic sulfonyl chloride photoinitiators include 2-naphthalenesulfonyl chloride. Specific examples of photoactive oxime photoinitiators include 1-phenyl-1,1-propanedione-2-(o-ethoxycarbonyl)-oxime. Specific examples of benzoin photoinitiators include benzoin. Specific examples of benzyl photoinitiators include benzyl. Specific examples of benzophenone photoinitiators include benzoylbenzoic acid, 3,3'-dimethyl-4-methoxybenzophenone, polyvinylbenzophenone, and α-hydroxycyclohexylphenyl ketone. Specific examples of thioxanthone-based photoinitiators include thioxanthone, 2-chlorothioxanthone, 2-methylthioxanthone, 2,4-dimethylthioxanthone, isopropylthioxanthone, 2,4-dichlorothioxanthone, 2,4-diethylthioxanthone, isopropylthioxanthone, 2,4-diisopropylthioxanthone, and dodecylthioxanthone.

[0082] Preferably, a photoinitiator that absorbs light with a wavelength of 300 nm or more (for example, light with a wavelength of 300 nm to 500 nm) and generates radicals can be used. The photoinitiator can be used alone or in appropriate combinations of two or more types.

[0083] The amount of photoinitiator in the unevenness-absorbing resin layer (C) is preferably 0.1 parts by mass or more and 7 parts by mass or less, more preferably 0.3 parts by mass or more and 7 parts by mass or less, and even more preferably 0.5 parts by mass or more and 3 parts by mass or less, per 100 parts by mass of resin in the unevenness-absorbing resin layer (C), from the viewpoint of improving storage stability and further suppressing chip shift, standoff, adhesive residue on the surface of the sealing layer and adhesive residue on the surface of the semiconductor chip 70.

[0084] The thermal initiator in the surface-absorbing resin layer (C) is not particularly limited, as long as it is capable of crosslinking the resin and / or crosslinking agent in the surface-absorbing resin layer (C) by thermal energy. The chemical species generated from the thermal initiator may be appropriately selected based on the functional groups of the resin and / or crosslinking agent. The chemical species generated from the thermal initiator are typically radicals or cations.

[0085] Examples of thermal initiators include aromatic ketones, onium salt compounds, organic peroxides, thio compounds, hexaarylbiimidazole compounds, ketoxime ester compounds, borate compounds, azinium compounds, metallocene compounds, active ester compounds, compounds having carbon-halogen bonds, and azo compounds. These may be used individually or in combination of two or more. Of these, in terms of availability and ease of handling, one or more selected from the group consisting of azo compounds and organic peroxides are preferred, and more preferably, organic peroxides are included.

[0086] Commercially available thermal initiators include V-70, V-65, V-601, V-59, V-40, VF-096, V-30, VAm-110, VAm-111 (all manufactured by Fujifilm Wako Pure Chemical Industries), Niper BW, Niper BMT, Perloyl TCP, Perloyl L, Perloyl 355, Perloyl SA, Perhexa HC, Perbutyl 355, Perbutyl D, Perbutyl L, Perbutyl ND, Perocta O, Perhexyl D, Perhexyl O, Perhexyl PV (all manufactured by NOF Corporation), Trigonox 36-C75, Laurox, Percadox L-W75, Percadox CH-50L, Trigonox TMBH, Kayakumen H, Kayabutyl H-70, Percadox BC-FF, Kayahex Examples include SA AD, Percadox 14, Kayabutyl C, Kayabutyl D, Percadox 12-XL25, Trigonox 22-N70 (22-70E), Trigonox D-T50, Trigonox 423-C70, Kayaester CND-C70, Trigonox 23-C70, Trigonox 257-C70, Kayaester P-70, Kayaester TMPO-70, Trigonox 121, Kayaester O, Kayaester HTP-65W, Kayaester AN, Trigonox 42, Trigonox F-C50, Kayabutyl B, Kayacarbon EH, Kayacarbon I-20, Kayacarbon BIC-75, Trigonox 117, Kayaren 6-70 (all manufactured by Kayaku Akzo).

[0087] The amount of thermal initiator in the unevenness-absorbing resin layer (C) is preferably 0.1 parts by mass or more and 7 parts by mass or less, more preferably 0.3 parts by mass or more and 7 parts by mass or less, and even more preferably 0.5 parts by mass or more and 3 parts by mass or less, per 100 parts by mass of resin in the unevenness-absorbing resin layer (C).

[0088] The unevenness-absorbing resin layer (C) may be a single layer or a multilayer layer. From the viewpoint of further suppressing chip shift, standoff, adhesive residue on the surface of the sealing layer, and adhesive residue on the surface of the semiconductor chip 70, the thickness of the unevenness-absorbing resin layer (C) is preferably 5 μm to 500 μm, more preferably 10 μm to 400 μm, and even more preferably 30 μm to 300 μm.

[0089] (Support substrate 80) When the adhesive film 50 includes an adhesive resin layer (B), the structure 100 of this embodiment preferably further includes a support substrate 80 on the adhesive resin layer (B) side of the adhesive film 50, from the viewpoint of further suppressing chip shift, standoff, and adhesive residue on the surface of the sealing layer.

[0090] The support substrate 80 is preferably a stainless steel substrate or a glass substrate from the viewpoint of further suppressing chip shift.

[0091] Furthermore, if the adhesive film 50 does not have an adhesive resin layer (B), the structure 100 of this embodiment may further include a frame member 90 on the adhesive resin layer (A) side of the adhesive film 50. This makes it easier to fix the adhesive film 50 and further suppresses chip shift, standoff, adhesive residue on the surface of the sealing layer, and adhesive residue on the surface of the semiconductor chip 70. Figures 3 and 4 show schematic cross-sectional views illustrating an example of a method for manufacturing the electronic device of this embodiment when the structure 100 further includes a frame member 90.

[0092] [Step of irradiating the structure 100 with light from the semiconductor chip 70 side] Next, as shown in Figures 3(b) and 5(b), the structure 100 is irradiated with light from the semiconductor chip 70 side. This step suppresses chip shift, standoff, and adhesive residue on the surface of the sealing layer.

[0093] In the process of irradiating the structure 100 with light from the semiconductor chip 70 side, the light 200 used for irradiation preferably includes ultraviolet light, from the viewpoint of further promoting the crosslinking of the resin in the adhesive resin layer (A) and further suppressing chip shift, standoff, and adhesive residue on the surface of the sealing layer. The light source used at this time is not particularly limited, but it is preferable to use a light source capable of irradiating ultraviolet light, and it is more preferable to use a light source capable of irradiating ultraviolet light that includes components with a wavelength of less than 300 nm. Examples of such light sources include high-pressure mercury lamps, low-pressure mercury lamps, metal halide lamps, and super UV lamps. The light irradiated by the above light source may include components with a wavelength of 300 nm or more. In the case of ultraviolet crosslinking, for example, in an environment of 0 to 60°C, a high-pressure mercury lamp is used to irradiate ultraviolet light with a main wavelength of 365 nm at an irradiation intensity of 10 to 350 mW / cm². ２ UV radiation levels of 100-20000 mJ / cm² ２ By irradiating the structure 100 under these conditions, the adhesive resin layer (A) can be crosslinked and cured.

[0094] The step of irradiating the structure 100 with light from the semiconductor chip 70 side is preferably performed under a nitrogen atmosphere or vacuum, from the viewpoint of further suppressing chip shift, standoff, and adhesive residue on the surface of the sealing layer.

[0095] [Step of sealing the semiconductor chip 70 with sealing material 60] Next, as shown in Figures 3(c) and 5(c), the semiconductor chip 70 is sealed with sealing material 60. At this time, the step of sealing the semiconductor chip 70 with sealing material 60 preferably includes, from the viewpoint of further suppressing chip shift, a step of forming a sealing layer made of the sealing material and a step of curing the sealing layer by treating it with one or more methods selected from the group consisting of light irradiation and heat treatment.

[0096] The form of the sealing material 60 is not particularly limited, but for example, it may be granular, sheet-like, or liquid. Of these, liquid is preferred from the viewpoint of being able to carry out the sealing process at low temperature and low pressure and further suppressing chip shift during the sealing process.

[0097] The encapsulant 60 preferably includes one or more types selected from the group consisting of epoxy resin-based encapsulants and silicone resin-based encapsulants, and more preferably includes an epoxy resin-based encapsulant, as this improves the affinity of the encapsulant 60 to the adhesive film 50 and enables more uniform encapsulation of the semiconductor chip 70. Examples of such epoxy resin-based encapsulants include the T693 / R4000 series, T693 / R1000 series, T693 / R5000 series, etc., manufactured by Nagase ChemteX Corporation. Examples of such silicone resin-based encapsulants include KMC-8400 manufactured by Shin-Etsu Chemical Co., Ltd., and TSE3033, TSE3251, etc., manufactured by Momentive Performance Materials Japan.

[0098] The method for forming the sealing layer in the process of forming the sealing layer made of the sealing material 60 preferably includes one or more selected from the group consisting of transfer molding, injection molding, compression molding, and casting molding.

[0099] The temperature at which the sealing layer is formed is preferably 10°C to 150°C, more preferably 20°C to 140°C, even more preferably 30°C to 130°C, and even more preferably 40°C to 120°C, from the viewpoint of work efficiency and further suppression of chip shift. In this embodiment, the temperature at which the sealing layer is formed refers to the set temperature of the apparatus used to seal the semiconductor chip 70.

[0100] The pressure applied when forming the encapsulation layer is preferably 30 kPa to 150 kPa, more preferably 50 kPa to 140 kPa, even more preferably 70 kPa to 130 kPa, and even more preferably 90 kPa to 120 kPa, from the viewpoint of improving the reliability of the electronic device and further suppressing chip shift. Furthermore, it is even more preferable that the pressure applied when forming the encapsulation layer be at atmospheric pressure. In this embodiment, the pressure applied when forming the encapsulation layer refers to the set pressure in the device used to encapsulate the semiconductor chip 70.

[0101] In the step of curing the sealing layer by treating it with one or more methods selected from the group consisting of light irradiation and heat treatment, the light irradiation preferably involves irradiating the sealing material 60 with light such as ultraviolet light to crosslink and cure the sealing material 60. The light source used at this time is not particularly limited, but preferably a light source capable of irradiating ultraviolet light containing wavelength components that can excite the photoinitiator is used, and more preferably a light source capable of irradiating ultraviolet light containing components with a wavelength of less than 300 nm is used. Examples of such light sources include high-pressure mercury lamps, low-pressure mercury lamps, metal halide lamps, super UV lamps, etc. The light irradiated by the above light source may contain components with a wavelength of 300 nm or more. In the case of ultraviolet crosslinking, for example, in an environment of 0 to 60°C, a high-pressure mercury lamp is used to irradiate ultraviolet light with a main wavelength of 365 nm at an irradiation intensity of 10 to 350 mW / cm². ２ UV radiation levels of 100-20000 mJ / cm² ２ By irradiating the sealing material 60 under these conditions, the sealing material 60 can be crosslinked and cured.

[0102] Preferably, the above heat treatments include thermal crosslinking using an oven, thermal crosslinking using a hot plate, and thermal crosslinking by infrared irradiation. In the case of thermal crosslinking, the heating temperature is, for example, 100°C to 180°C, and the heat treatment time is, for example, 10 to 180 minutes. It is preferable that the heating temperature does not exceed the temperature at which gas is generated in the adhesive film 50 described later, or the temperature at which the thermally expandable microspheres expand.

[0103] [Step of peeling off the support substrate 80 and the adhesive resin layer (B)] When the adhesive film 50 is provided with an adhesive resin layer (B), and the structure 100 further includes a support substrate 80 on the adhesive resin layer (B) side of the adhesive film 50, as shown in Figure 5(d), the manufacturing method of the electronic device of this embodiment preferably includes a step of peeling off the support substrate 80 and the adhesive resin layer (B) after the step of sealing the semiconductor chip 70 with the sealing material 60 and before the step of irradiating the structure 100 with light from the adhesive film 50 side. This step makes it possible to efficiently cure the portion of the adhesive resin layer (A) that was not exposed to light and did not harden completely during the step of irradiating the structure 100 with light from the semiconductor chip 70 side, and as a result, adhesive residue on the surface of the semiconductor chip 70 can be suppressed. The support substrate 80 can be easily removed from the adhesive film 50 by, for example, heating it to a temperature exceeding 150°C or 170°C after sealing the semiconductor chip 70 to reduce the adhesive strength of the adhesive resin layer (B).

[0104] [Step of irradiating the structure 100 with light from the adhesive film 50 side] As shown in Figures 4(d) and 6(e), the manufacturing method of the electronic device of this embodiment preferably further includes a step of irradiating the structure 100 with light from the adhesive film 50 side after the step of sealing the semiconductor chip 70 with the sealing material 60. As described above, when light is irradiated from the semiconductor chip 70 side, the light is blocked by the semiconductor chip 70 in the central part of the back surface of the semiconductor chip 70 (the part in contact with the adhesive resin layer (A) and the semiconductor chip 70), making it difficult for the adhesive resin layer (A) to harden. Therefore, by irradiating the structure 100 with light from the adhesive film 50 side after the step of sealing the semiconductor chip 70 with the sealing material 60, the adhesive resin layer (A) in the part in contact with the central part of the back surface of the semiconductor chip 70 can be hardened. This makes it easier to peel the adhesive film 50 from the semiconductor chip 70 and suppresses adhesive residue on the surface of the semiconductor chip 70.

[0105] As shown in Figure 4, the light 200 used for light irradiation in the process of irradiating the structure 100 from the adhesive film 50 side preferably includes ultraviolet light, from the viewpoint of further promoting crosslinking of the resin in the adhesive resin layer (A) and further suppressing chip shift, standoff, and adhesive residue on the surface of the sealing layer. The light source used at this time is not particularly limited, but preferably a light source capable of irradiating ultraviolet light is used, and more preferably a light source capable of irradiating ultraviolet light containing components with a wavelength of less than 300 nm is used. Examples of such light sources include high-pressure mercury lamps, low-pressure mercury lamps, metal halide lamps, super UV lamps, etc. The light irradiated by the above light source may contain components with a wavelength of 300 nm or more. In the case of ultraviolet crosslinking, for example, in an environment of 0 to 60°C, a high-pressure mercury lamp is used to irradiate ultraviolet light with a main wavelength of 365 nm at an irradiation intensity of 10 to 350 mW / cm². ２ UV radiation levels of 100-20000 mJ / cm² ２ By irradiating the structure 100 under these conditions, the adhesive resin layer (A) can be crosslinked and cured.

[0106] [Step of peeling the adhesive film 50 from the semiconductor chip 70] As shown in Figures 4(e) and 6(f), the manufacturing method of the electronic device of this embodiment preferably further includes a step of peeling the adhesive film 50 from the semiconductor chip 70 after a step of irradiating the structure 100 with light from the adhesive film 50 side. This step gives rise to the electronic device 300. Examples of methods for peeling the adhesive film 50 from the semiconductor chip 70 include a mechanical peeling method and a method of peeling after reducing the adhesive strength of the surface of the adhesive film 50.

[0107] (Other steps) In the method for manufacturing the electronic device of this embodiment, the method may further include the step of forming a wiring layer 310 and bumps 320 on the exposed surface of the obtained electronic device 300, as shown in Figures 4(f) to (g) and 6(g) to (h), in order to obtain the electronic device 400.

[0108] The wiring layer 310 comprises a pad (not shown), which is an external connection terminal formed on the outermost surface, and wiring (not shown) that electrically connects the exposed semiconductor chip 70 to the pad. The wiring layer 310 can be formed by conventionally known methods and may have a multilayer structure.

[0109] Then, bumps 320 can be formed on the pads of the wiring layer 310 to obtain the electronic device 400. Examples of bumps 320 include solder bumps and gold bumps. Solder bumps can be formed, for example, by placing solder balls on the pads which are external connection terminals of the wiring layer 310 and heating them to melt the solder (reflow). Gold bumps can be formed by methods such as ball bonding, plating, and Au ball transfer.

[0110] The manufacturing method for electronic devices of this embodiment can preferably be used to manufacture electronic devices including a fan-out type package. That is, the electronic devices obtained by the manufacturing method of this embodiment include a fan-out type package. In a fan-out type package, terminals can be extended to the outside of the chip (fan out), so it can be used even in applications where the number of terminals is large relative to the chip area. In addition, since a package substrate is not required, it is possible to make the package thinner.

[0111] The embodiments of the present invention have been described above with reference to the drawings, but these are merely examples of the present invention, and various other configurations can be adopted. Furthermore, the present invention is not limited to the embodiments described above, and any modifications, improvements, etc., that can achieve the objectives of the present invention are included within the scope of the present invention.

[0112] This application claims priority based on Japanese Patent Application No. 2024-167077, filed on 26 September 2024, and incorporates all of its disclosures herein.

[0113] A Adhesive resin layer B Adhesive resin layer C Unevenness-absorbing resin layer 50 Adhesive film 60 Encapsulating material 70 Semiconductor chip 80 Support substrate 90 Frame member 100 Structure 200 Light 300 Electronic device 310 Wiring layer 320 Bump 400 Electronic device

Claims

1. A method for manufacturing an electronic device, comprising the steps of: preparing a structure comprising an adhesive film having a base layer and a photocurable adhesive resin layer (A), and a semiconductor chip directly attached to the adhesive resin layer (A) of the adhesive film; irradiating the structure with light from the semiconductor chip side; and sealing the semiconductor chip with a sealing material, in this order.

2. The method for manufacturing an electronic device according to claim 1, further comprising the step of irradiating the structure with light from the adhesive film side after the step of encapsulating the semiconductor chip with the encapsulating material.

3. The method for manufacturing an electronic device according to claim 2, further comprising the step of peeling the adhesive film from the semiconductor chip after the step of irradiating the structure with light from the adhesive film side.

4. A method for manufacturing an electronic device according to any one of claims 1 to 3, wherein the light used in the light irradiation includes ultraviolet light.

5. A method for manufacturing an electronic device according to any one of claims 1 to 4, wherein the substrate layer is light-transmitting.

6. A method for manufacturing an electronic device according to any one of claims 1 to 5, wherein the substrate layer comprises one or more selected from the group consisting of polyolefin, polyethylene terephthalate, polybutylene terephthalate, polyethylene naphthalate, ethylene vinyl acetate copolymer, polyamide, and polyimide.

7. A method for manufacturing an electronic device according to any one of claims 1 to 6, wherein the adhesive resin layer (A) comprises one or more selected from the group consisting of (meth)acrylic adhesive resins, silicone adhesive resins, urethane adhesive resins, olefin adhesive resins, and styrene adhesive resins.

8. The method for manufacturing an electronic device according to any one of claims 1 to 7, wherein the total content of gas-generating components and thermally expandable microspheres in the adhesive resin layer (A) is 0.1% by mass or less when the total content of the adhesive resin layer (A) is 100% by mass.

9. The method for manufacturing an electronic device according to any one of claims 1 to 8, wherein the adhesive film further comprises an adhesive resin layer (B) on the side of the substrate layer opposite to the side of the adhesive resin layer (A).

10. The method for manufacturing an electronic device according to claim 9, wherein the adhesive resin layer (B) of the adhesive film is a layer whose adhesive strength decreases when heat-treated.

11. The method for manufacturing an electronic device according to claim 9 or 10, wherein the adhesive resin layer (B) of the adhesive film contains a heat-expandable adhesive.

12. The method for manufacturing an electronic device according to claim 11, wherein the heat-expandable adhesive in the adhesive film is an adhesive whose adhesive strength decreases or is lost when heated at a temperature exceeding 150°C.

13. The method for manufacturing an electronic device according to any one of claims 9 to 12, wherein the structure further includes a support substrate on the adhesive resin layer (B) side of the adhesive film.

14. The method for manufacturing an electronic device according to claim 13, wherein the support substrate is a stainless steel substrate or a glass substrate.

15. The method for manufacturing an electronic device according to any one of claims 1 to 14, wherein the adhesive film further comprises a surface-absorbing resin layer (C).

16. The method for manufacturing an electronic device according to claim 15, wherein the thickness of the unevenness-absorbing resin layer (C) is 5 μm or more and 500 μm or less.

17. A method for manufacturing an electronic device according to any one of claims 1 to 16, wherein the step of sealing the semiconductor chip with the sealing material includes the steps of forming a sealing layer made of the sealing material and curing the sealing layer by treating it with one or more methods selected from the group consisting of light irradiation and heat treatment.

18. The method for manufacturing an electronic device according to any one of claims 1 to 17, wherein the sealing material includes an epoxy resin-based sealing material.

19. A method for manufacturing an electronic device according to any one of claims 1 to 18, wherein the step of irradiating the structure with light from the semiconductor chip side is performed under a nitrogen atmosphere or under a vacuum.

20. A method for manufacturing an electronic device according to any one of claims 1 to 19, wherein the semiconductor chip has an uneven structure.

21. The method for manufacturing an electronic device according to claim 20, wherein the uneven structure includes bump electrodes.

22. A method for manufacturing an electronic device according to any one of claims 1 to 21, wherein the electronic device includes a fan-out type package.

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