Ion pulse air spraying device, and dry cleaning system and method using same

Abstract

An ion pulse air spraying device according to an embodiment of the present invention comprises: a pressure adjustment unit for adjusting a pressure value of air supplied from the outside to a set pressure value; a pulse generation unit for generating pulses for supplying, in a pulsed manner within a set frequency band, the air adjusted to the set pressure value; an ion generation unit for ionizing the air supplied in a pulsed manner from the pulse generation unit; and an ion pulse air spraying unit for spraying, onto a surface of an object to be cleaned, the pulsed air ionized by the ion generation unit.

Description

Ion pulse air injection device and dry cleaning system and method using the same

[0001] The present invention relates to a semiconductor manufacturing system, and more specifically, to an ion pulse air injection device and a dry cleaning system and method using the same.

[0002] Surface cleaning of semiconductor wafers is critical because contamination on the wafer surface significantly affects the productivity of the final product. This applies equally to the surface cleaning of secondary battery films and products during the manufacturing process, as well as to the surfaces of displays and solar cell products; thus, the scope of the present invention extends to these areas as well.

[0003] Wet cleaning and dry cleaning are methods for cleaning wafer surfaces. Wet cleaning presents problems such as the large installation area required for cleaning equipment and the need to consider wastewater treatment, while dry cleaning has the issue that suspended particles are not properly removed. Specifically, there is still a problem of re-contamination of the wafer surface as suspended particles detached from the wafer surface by the impact of the sprayed air are re-adsorbed onto the cleaned wafer surface.

[0004] In addition, as the circuits of semiconductor devices become increasingly highly integrated and miniaturized, defects can occur even from fine particles of 5㎛ level adsorbed on the wafer surface. Generally, an air layer is formed on the surface of all objects, and a fine air layer can also be formed on the surface of a wafer. In this case, fine particles of 5㎛ level adsorbed on the wafer surface can be covered by the aforementioned air layer.

[0005] As such, fine foreign substances covered by an air layer are not properly removed by conventional dry cleaning methods using air blow. This is because the air sprayed onto the wafer surface via an air blow does not easily break the air layer on the wafer surface. Although a non-contact ultrasonic cleaning method must be used to break the air layer on the wafer surface, there is a risk that the internal circuits of the semiconductor device may be damaged by the ultrasound during cleaning.

[0006] Therefore, a dry cleaning technology is required that can remove even minute foreign substances covered by an air layer on the wafer surface without damaging the internal circuits of the semiconductor device.

[0007] An embodiment of the present invention provides an ion pulse air injection device capable of removing fine foreign substances covered by an air layer on a wafer surface without damaging the internal circuit of a semiconductor device, and a dry cleaning system and method using the same.

[0008] An embodiment of the present invention provides an ion pulse air injection device capable of preventing the generation of static electricity on a wafer surface due to air friction, and a dry cleaning system and method using the same.

[0009] An ion pulse air injection device according to an embodiment of the present invention comprises: a pressure control unit that adjusts the pressure value of air supplied from the outside to a set pressure value; a pulse generation unit that generates a pulse to supply the air adjusted to the set pressure value in the form of a pulse of a set frequency band; an ion generation unit that ionizes the air supplied in the form of a pulse from the pulse generation unit; and an ion pulse air injection unit that sprays the pulse-shaped air ionized by the ion generation unit onto the surface of a cleaning object.

[0010] A dry cleaning system according to an embodiment of the present invention comprises: a Manufacturing Execution System (MES) configured to manage a semiconductor manufacturing process overall; a Fault Detection and Classification (FDC) server that transmits information related to sensor data received from semiconductor manufacturing equipment and the analysis results of said sensor data to said MES; and an ion pulse air injection device that, when a cleaning target is introduced into said semiconductor manufacturing equipment, adjusts the pressure value of air supplied from the outside to a set pressure value, provides the air adjusted to the set pressure value in the form of discontinuous pulses in a set frequency band, and ionizes the air provided in the form of pulses and sprays it onto the surface of said cleaning target.

[0011] A dry cleaning method according to an embodiment of the present invention comprises the steps of: adjusting the pressure value of air supplied from the outside to a set pressure value when a workpiece to be cleaned is introduced into semiconductor manufacturing equipment; generating a pulse having a set frequency band and providing the air adjusted to the set pressure value in a pulse form; ionizing the air provided in the pulse form; and spraying the ionized pulse-shaped air onto the surface of the workpiece to be cleaned.

[0012] An embodiment of the present invention can suppress the generation of static electricity on the wafer surface caused by air friction by spraying ionized pulsed air (ion pulsed air) onto the surface of a wafer to induce ionic bonding with anions and cations present on the wafer surface.

[0013] In addition, the embodiment of the present invention can effectively remove even fine foreign substances (particles) covered by the air layer by spraying air in a discontinuous pulse form (i.e., a form in which breaks and connections are repeated) onto the surface of a wafer to be cleaned, thereby easily breaking the air layer formed on the wafer surface.

[0014] FIG. 1 is a diagram showing the configuration of a dry cleaning system according to an embodiment of the present invention.

[0015] Figures 2 and 3 are drawings showing the configuration of the ion pulse air injection device of Figure 1.

[0016] FIG. 4 is a diagram showing the configuration for communication between an ion pulse air injection device and an FDC server according to an embodiment of the present invention.

[0017] FIG. 5 is a conceptual diagram illustrating the principle of removing static electricity on a wafer surface by ion pulse air sprayed from an ion pulse air spraying device according to an embodiment of the present invention.

[0018] FIG. 6 is a flowchart illustrating a dry cleaning method according to an embodiment of the present invention.

[0019] FIG. 2 illustrates the best mode for carrying out the present invention.

[0020] Hereinafter, embodiments of the present disclosure are described in detail with reference to the drawings so that those skilled in the art can easily practice them. However, the present disclosure may be embodied in various different forms and is not limited to the embodiments described herein. In relation to the description of the drawings, the same or similar reference numerals may be used for identical or similar components. Furthermore, descriptions of well-known functions and configurations in the drawings and related descriptions may be omitted for clarity and brevity.

[0021] FIG. 1 is a diagram showing the configuration of a dry cleaning system (10) according to an embodiment of the present invention.

[0022] Referring to FIG. 1, a dry cleaning system (10) according to an embodiment of the present invention may include a Manufacturing Execution System (MES) (100), a Fault Detection and Classification (FDC) server (200), and equipment (300). In the embodiment, the equipment (300) may include an ion pulse air injection device (400).

[0023] Although only one piece of equipment is shown in FIG. 1, it will be obvious to those skilled in the art that multiple pieces of equipment may be provided. In addition, when multiple pieces of equipment are provided, each piece of equipment can transmit and receive data with the FDC server (200) using a separate communication channel.

[0024] In the embodiment, the equipment (300) may be semiconductor cleaning equipment, but is not specifically limited thereto and may include all manufacturing equipment corresponding to each of the series of processes for manufacturing semiconductor devices. That is, the ion pulse air injection device (400) according to the embodiment of the present invention may be applied to various manufacturing equipment in addition to semiconductor cleaning equipment where the removal of foreign substances and static electricity during the process is required. For convenience of explanation, the equipment (300) is limited to being semiconductor cleaning equipment in this specification.

[0025] The MES (100) manages the semiconductor manufacturing process and can also provide a user interface screen for operation commands by an operator. The MES (100) may be a management system that supports various activities (scheduling, work instructions, quality control, work performance aggregation, etc.) for performing work in the field. In particular, the MES (100) is a system designed to reduce the difference between production planning and execution, and can perform functions that support the operator's decision-making by providing real-time information on the field status. For example, the MES (100) may be configured to integrate and manage all information that may occur in the field, such as monitoring and controlling process progress information, controlling and monitoring equipment, tracking and controlling quality information, and aggregating performance information.

[0026] The FDC server (200) can monitor and analyze sensor data measured by at least one sensor provided within the equipment (300). For example, the FDC server (200) can receive multiple sensor data measured by various sensors provided within the equipment (300) from the equipment (300) through a communication channel (CH) using a preset communication method (wired or wireless). Additionally, the FDC server (200) can detect and identify abnormalities in the process and classify the causes of defects based on the results of the sensor data analysis. Furthermore, the FDC server (200) can transmit various information related to the sensor data received from the equipment (300) and the results of the sensor data analysis to the MES (100). Data transmission and reception between the FDC server (200) and the MES (100), and data transmission and reception between the FDC server (200) and the equipment (300), can be performed using methods commonly used in semiconductor manufacturing systems.

[0027] In an embodiment, the FDC server (200) can receive sensor data from an ion pulse air injection device (400) installed in the equipment (300) via a wireless communication channel (500). The wireless communication channel (500) may be a communication channel using a Bluetooth communication method, but is not specifically limited thereto.

[0028] That is, the FDC server (200) and the equipment (300) transmit and receive data through a communication channel (CH), and the ion pulse air injection device (400) installed within the FDC server (200) and the equipment (300) can transmit and receive data through a separate wireless communication channel (500). To this end, the FDC server (200) may separately provide a communication unit (not shown) for communication with the equipment (300) and a communication unit (210) for communication with the ion pulse air injection device (400). In an embodiment, the communication unit (210) of the FDC server (200) may include a data receiving module (211, FIG. 4) and a pairing module (215, FIG. 4). This will be explained later with reference to FIG. 4.

[0029] The ion pulse air injection device (400) may be installed within the equipment (300). In an embodiment, the ion pulse air injection device (400) may be installed so as to be detachable within the equipment (300), but is not specifically limited thereto. In addition, in an embodiment, the ion pulse air injection device (400) may be installed within the equipment (300) at a position where the ion pulse air injection part (460, FIG. 2 and FIG. 3) faces the surface of the object to be cleaned (e.g., a wafer).

[0030] FIGS. 2 and FIGS. 3 are drawings showing the configuration of the ion pulse air injection device (400) of FIG. 1. The ion pulse air injection device (400a) of FIG. 2 and the ion pulse air injection device (400b) of FIG. 3 have the same function of components having the same name, except that the driving method of the pulse generation unit (440a, 440b) is different.

[0031] Referring to FIG. 2, the ion pulse air injection device (400a) may include a control unit (410), an air supply unit (420), a pressure control unit (430), a pulse generation unit (440a), an ion generation unit (450), an ion pulse air injection unit (460), and a communication unit (470).

[0032] The control unit (410) can control the general operation of the ion pulse air injection device (400a). For example, the control unit (410) can control the operation of each of the air supply unit (420), pressure control unit (430), pulse generation unit (441a), ion generation unit (450), ion pulse air injection unit (460), and communication unit (470).

[0033] The air supply unit (420) can supply air introduced from the air supply pipe (310) installed in the equipment (300) to the pressure regulating unit (430) under the control of the control unit (410). For example, one side of the air supply unit (420) may be connected to the air supply pipe (310), and the other side may be connected to the pressure regulating unit (430). Additionally, the air supply unit (420) may include a solenoid valve, but is not specifically limited thereto.

[0034] For example, the air supply unit (420) can open the valve to supply air flowing in from the air supply pipe (310) to the pressure regulating unit (430) when the object to be cleaned is brought in according to the control of the control unit (410), and close the valve to block the supply of air flowing in from the air supply pipe (310) to the pressure regulating unit (430) when the object to be cleaned, after the cleaning process is completed, is withdrawn.

[0035] The pressure regulating unit (430) can adjust the pressure value of the air supplied from the air supply unit (420) to a preset pressure value according to the control of the control unit (410), and supply the air adjusted to the preset pressure value to the pulse generating unit (440a). For example, the pressure regulating unit (430) can adjust the pressure of the air using a regulator. In the embodiment, the preset pressure value of the air may be 0.1 MPa to 0.15 MPa, but is not particularly limited thereto.

[0036] The pulse generation unit (440a) may be configured to generate a pulse having a preset frequency band under the control of the control unit (410) and supply air supplied from the pressure regulating unit (430) in the form of a pulse to the ion generation unit (450). For example, the pulse generation unit (440a) may include a motor-type pulse generator, but is not specifically limited thereto.

[0037] In the embodiment, air is supplied continuously without interruption from the air supply pipe (310) to the air supply unit (420), the pressure control unit (430), and the pulse generation unit (440a), and air can be supplied in a pulse form from the pulse generation unit (440a) to the ion generation unit (450). Here, the fact that air is supplied in a pulse form may mean that supply and interruption occur repeatedly. For example, if the set frequency band is 20Hz, the air supplied from the pulse generation unit (440a) to the ion generation unit (450) can repeat interruption and connection 20 times per second. That is, the pulse generation unit (440a) can supply discontinuous pulse-shaped air (pulse air) with repeated interruption and connection to the ion generation unit (450).

[0038] The ion generating unit (450) can ionize air supplied in a pulse form from the pulse generating unit (440a) under the control of the control unit (410), and supply the ionized pulsed air (ion pulse air) to the ion pulse air injection unit (460). In the embodiment, the ion generating unit (450) can ionize air using a piezoelectric component, but is not particularly limited thereto. For example, the ion generating unit (450) can ionize air by applying a high-output voltage or current to the air supplied in a pulse form.

[0039] The ion pulse air injection unit (460) can spray ion pulse air supplied from the ion generation unit (450) onto the surface of a cleaning target (e.g., a wafer) under the control of the control unit (410).

[0040] The communication unit (470) receives sensor data from the pulse generation unit (440a) and the ion generation unit (450), respectively, under the control of the control unit (410), and can transmit the received sensor data to the FDC server (200) via a wireless communication channel (500, FIG. 1). In an embodiment, as shown in FIG. 4, the communication unit (470) may include a data collection module (471, FIG. 4) that collects sensor data from the first sensor (445, FIG. 4) of the pulse generation unit (440a) and the second sensor (455) of the ion generation unit (450), and a data transmission module (475, FIG. 4) that transmits the collected data to the FDC server (200) via a wireless communication channel (500, FIG. 1). The communication unit (470) will be described in detail later with reference to FIG. 4.

[0041] The ion pulse air injection device (400b) illustrated in FIG. 3 may include a pulse generator (440b) that generates pulses in a different manner than the pulse generator (440a) of FIG. 2, as previously described. For example, the pulse generator (440a) of FIG. 2 may generate pulses using a motor-type pulse generator, and the pulse generator (440b) of FIG. 3 may generate pulses using a pneumatic-type pulse generator. Accordingly, the ion pulse air injection device (400b) of FIG. 3 may further include an operating air supply line (480) that supplies operating air from an air supply unit (420) to the pulse generator (440b) to operate the pneumatic-type pulse generator of the pulse generator (440b). For example, the operating air supply line (480) may include a valve for supplying and blocking operating air, and the valve may be opened and closed by the control of a control unit (410).

[0042] FIG. 4 is a diagram showing a configuration for communication between an ion pulse air injection device (400a and 400b) and an FDC server (200) according to an embodiment of the present invention.

[0043] Referring to FIG. 4, the pulse generation unit (440a and 440b) may include a pulse generator (441) and a first sensor (445), and the ion generation unit (450) may include an ion generator (451) and a second sensor (455). In the embodiment, the first sensor (445) of the pulse generation unit (440a and 440b) may be a sensor that measures a pulse wavelength. Additionally, the second sensor (455) of the ion generation unit (450) may be a sensor that measures voltage or current.

[0044] The communication unit (470) may include a data collection module (471) that collects sensor data (e.g., pulse wavelength value and voltage or current value) measured by the first sensor (445) of the pulse generation unit (440a and 440b) and the second sensor (455) of the ion generation unit (450), and a data transmission module (475) that transmits the collected sensor data to the FDC server (200) through a wireless communication channel (500).

[0045] Referring again to FIG. 4, the FDC server (200) may include a communication unit (210) that creates a wireless communication channel (500) for communication with the ion pulse air injection device (400a and 400b) and receives sensor data transmitted through the wireless communication channel (500) from the communication unit (470) of the ion pulse air injection device (400a and 400b).

[0046] The communication unit (210) of the FDC server (200) may include a data receiving module (211) and a pairing module (215).

[0047] The data receiving module (211) can receive sensor data transmitted from the data transmitting module (475) of the ion pulse air injection device (400a and 400b). Additionally, the pairing module (215) can create a wireless communication channel (500) by pairing the data transmitting module (475) of the ion pulse air injection device (400a and 400b) with the data receiving module (211) of the FDC server (200). For example, the wireless communication channel (500) may be Bluetooth communication, but is not specifically limited thereto.

[0048] FIG. 5 is a conceptual diagram illustrating the principle of removing static electricity on a wafer surface by ion pulse air sprayed from an ion pulse air spray device (400, FIG. 1) according to an embodiment of the present invention.

[0049] During the process of spraying air to clean the surface of a wafer (W), static electricity may be generated on the surface of the wafer (W) due to friction between the continuously supplied air and the surface of the wafer (W). Static electricity generated on the surface of the wafer (W) can cause various problems. For example, foreign substances (particles) suspended by electrostatic attraction may adhere to the surface of the wafer (W), or the static electricity may affect the internal circuits formed on the wafer (W) as it discharges through them. Additionally, problems may arise where semiconductor manufacturing equipment malfunctions due to electromagnetic waves accompanying the discharge of static electricity.

[0050] The ion pulse air injection device (400, FIG. 1) according to an embodiment of the present invention, as shown in FIG. 5, injects ionized pulsed air (i.e., ion pulse air) onto the surface of a wafer (W), so that the negative ions and positive ions present on the surface of the wafer (W) can be ionically bonded with the positive ions and negative ions contained in the ion pulse air, respectively. Accordingly, the generation of static electricity on the surface of the wafer (W) can be suppressed.

[0051] In addition, by spraying air in a discontinuous pulse form (i.e., a form in which breaks and connections are repeated) onto the surface of the wafer (W) to be cleaned, the air layer on the surface of the wafer (W) described above can be easily broken, thereby improving the removal rate of fine foreign substances (particles) covered by the air layer.

[0052] In an embodiment, foreign substances (particles) separated from the surface of the wafer (W) and floating by the ion pulse air sprayed from the ion pulse air injection unit (460) can be collected by an exhaust device (not shown) installed in the equipment (300).

[0053] FIG. 6 is a flowchart illustrating a dry cleaning method according to an embodiment of the present invention. In describing a dry cleaning method according to an embodiment of the present invention with reference to FIG. 6, at least one of FIG. 1 to FIG. 5 may be referenced.

[0054] In step S510, when a wafer (W, FIG. 5) to be cleaned is introduced into the equipment (300, FIG. 1), the ion pulse air injection device (400, FIG. 1) can control the air supply unit (420) to supply air flowing in from the air supply pipe (310) installed in the equipment (300) to the pressure control unit (430). Additionally, the ion pulse air injection device (400, FIG. 1) can control the pressure control unit (430) to adjust the pressure value of the air supplied from the air supply unit (420) so that it reaches a preset pressure value, and supply the air adjusted to the preset pressure value to the pulse generation unit (440a and 440b, FIG. 2 and FIG. 3).

[0055] In step S520, the ion pulse air injection device (400, FIG. 1) can control the pulse generators (440a and 440b) to generate a pulse having a preset frequency band and supply air adjusted to a preset pressure value in the form of the generated pulse to the ion generator (450).

[0056] In step S530, the ion pulse air injection device (400, FIG. 1) can control the ion generation unit (450) to ionize air supplied in a pulse form from the pulse generation unit (440a, 440b) and supply the ionized pulsed air (ion pulse air) to the ion pulse air injection unit (460). Additionally, the ion pulse air injection device (400, FIG. 1) can control the ion pulse air injection unit (460) to inject the ionized pulsed air (ion pulse air) onto the surface of the wafer (W) to be cleaned.

[0057] In step S540, the ion pulse air injection device (400, FIG. 1) controls the communication unit (470) to collect the pulse wavelength value measured by the pulse generation unit (440a, 440b) and the voltage / current value measured by the ion generation unit (450) as sensor data, and can transmit the collected sensor data to the FDC server (200) through the wireless communication channel (500).

[0058] Those skilled in the art to which the present invention pertains should understand that the embodiments described above are illustrative in all respects and not restrictive, as the present invention may be implemented in other specific forms without altering its technical concept or essential features. The scope of the present invention is defined by the claims set forth below rather than by the detailed description above, and all modifications or variations derived from the meaning and scope of the claims and equivalent concepts thereof should be interpreted as being included within the scope of the present invention.

[0059] Embodiments of the present invention can be usefully utilized in manufacturing equipment that performs manufacturing processes for products such as semiconductor devices, secondary batteries, displays, and solar cells.

Claims

1. A pressure regulating unit that adjusts the pressure value of air supplied from the outside to a set pressure value; A pulse generating unit for generating pulses to supply air, adjusted to the above-mentioned pressure value, in the form of pulses of a set frequency band; An ion generating unit that ionizes air supplied in pulse form from the above pulse generating unit: and An ion pulse air injection unit that sprays pulse-shaped air ionized from the above ion generation unit onto the surface of the object to be cleaned. An ion pulse air injection device including 2. In Paragraph 1, The above-described ion pulse air injection device further comprises a control unit that controls the general operation of the ion pulse air injection device.

3. In Paragraph 2, The above-mentioned ion pulse air injection device is, An air supply unit connected to an air supply pipe installed within the equipment into which the object to be cleaned is introduced, and which supplies air flowing in from the air supply pipe to the pressure regulating unit according to the control of the control unit. An ion pulse air injection device further comprising 4. In Paragraph 1, The pulse generation unit comprises a pulse generator that generates a pulse of the set frequency band and a first sensor that measures the wavelength of the generated pulse, and The above ion generating unit is an ion pulse air injection device comprising an ion generator that ionizes the air by applying a high-output voltage or current to the pulse-shaped air and a second sensor that measures the voltage or current.

5. In Paragraph 4, An ion pulse air injection device further comprising a communication unit that collects sensor data measured by the first sensor and the second sensor and transmits the collected sensor data to a FDC (Fault Detection and Classification) server via a wireless communication channel.

6. A Manufacturing Execution System (MES) configured to manage the semiconductor manufacturing process overall; FDC (Fault Detection and Classification) server that transmits information related to sensor data received from semiconductor manufacturing equipment and the analysis results of said sensor data to said MES; and An ion pulse air injection device that, when an object to be cleaned is introduced into the semiconductor manufacturing equipment, adjusts the pressure of air supplied from the outside to a set pressure value, provides the air adjusted to the set pressure value in the form of discontinuous pulses in a set frequency band, and ionizes the air provided in the form of pulses and sprays it onto the surface of the object to be cleaned. A dry cleaning system including 7. In Paragraph 6, The above-mentioned ion pulse air injection device is, A control unit that controls the various operations of the above-mentioned ion pulse air injection device; A pressure regulating unit that regulates the pressure value of the air supplied from the outside; A pulse generating unit for generating pulses to provide the above air in the form of discontinuous pulses of the above-set frequency band; An ion generating unit that ionizes air provided in the above pulse form by applying a high-output voltage or current; and An ion pulse air injection unit that sprays the above-mentioned ionized pulse-shaped air onto the surface of the object to be cleaned. A dry cleaning system including 8. In Paragraph 7, The above ion pulse air injection device is a dry cleaning system in which the ion pulse air injection unit is installed within the semiconductor manufacturing equipment at a position facing the surface of the object to be cleaned.

9. In Paragraph 7, The above ion pulse air injection device is a dry cleaning system further comprising an air supply unit connected to an air supply pipe installed within the semiconductor manufacturing equipment and supplying air flowing in from the air supply pipe to the pressure regulating unit according to the control of the control unit.

10. In Paragraph 7, The above pulse generation unit includes a pulse generator that generates the pulse and a first sensor that measures the wavelength of the generated pulse, and The above ion generating unit is a dry cleaning system comprising an ion generator that ionizes the pulsed air and a second sensor that measures the voltage or current.

11. In Paragraph 10, The above ion pulse air injection device further comprises a communication unit that collects first and second sensor data measured by the first sensor and the second sensor, and transmits the collected first and second sensor data to the FDC (Fault Detection and Classification) server via a wireless communication channel, thereby forming a dry cleaning system.

12. In Paragraph 11, The above communication unit is, A data collection module for collecting first and second sensor data measured by the first sensor and the second sensor; and A data transmission module that transmits the first and second sensor data collected by the data collection module to the FDC server via the wireless communication channel. A dry cleaning system including 13. In Paragraph 11, The above FDC server is, A first communication unit for communication with the above-mentioned semiconductor manufacturing equipment; and A second communication unit for communication with the above-mentioned ion pulse air injection device A dry cleaning system including 14. In Paragraph 13, The above second communication unit is, A data receiving module for receiving the first and second sensor data transmitted from the data transmitting module; and Pairing module that pairs the data transmission module and the data reception module A dry cleaning system including 15. In Paragraph 11, The above wireless communication channel is a dry cleaning system including Bluetooth communication.

16. A step of adjusting the pressure value of air supplied from the outside to a set pressure value when a workpiece to be cleaned is introduced into the semiconductor manufacturing equipment; A step of generating a pulse having a set frequency band and providing air regulated to the set pressure value in the form of a pulse; A step of ionizing the air provided in the form of the above pulses; and Step of spraying the above-mentioned ionized pulsed air onto the surface of the object to be cleaned A dry cleaning method including 17. In Paragraph 16, A step of collecting first sensor data that measures the wavelength of the generated pulse; and In the above ionizing step, a step of collecting second sensor data that measures the voltage or current applied to the air; A dry cleaning method including 18. In Paragraph 17, The step of transmitting the above first and second sensor data to a FDC (Fault Detection and Classification) server via a wireless communication channel. A dry cleaning method including

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