Temperature adjustment system and temperature adjustment method

Abstract

This temperature adjustment system adjusts the temperature of an object in contact with a structure. The temperature adjustment system comprises: a liquid supply unit that supplies a liquid refrigerant to the structure; a gas supply unit that supplies a gas refrigerant to the structure; and a control unit that controls the liquid supply unit and the gas supply unit. The control unit controls: a step in which, when the temperature of the object is equal to or higher than a first temperature threshold value, the structure is cooled by latent heat of vaporization of the liquid refrigerant that has become a mist obtained by supplying and mixing the liquid refrigerant and the gas refrigerant; a step in which, when the temperature of the object is lower than the first temperature threshold value and equal to or higher than a second temperature threshold value that is lower than the first temperature threshold value, the structure is cooled with the liquid refrigerant supplied from the liquid supply unit; and a step in which, when the temperature of the object is lower than the second temperature threshold value, the structure is cooled with the gas refrigerant supplied from the gas supply unit.

Description

Temperature adjustment system and temperature adjustment method

[0001] The present disclosure relates to a temperature adjustment system and a temperature adjustment method.

[0002] Patent Document 1 discloses a temperature adjustment system (cooling system) for removing heat from an object (workpiece) placed on the surface of a mounting table. This temperature adjustment system is configured to inject a refrigerant from a plurality of injection ports toward the heat transfer wall of the evaporation chamber of the mounting table. The refrigerant injected into the evaporation chamber evaporates,夺走 heat from the heat transfer wall, and reaches the outlet of the evaporation chamber. Thereby, the heat of the object on the mounting table is removed.

[0003] Japanese Patent Application Laid-Open No. 2019-140270

[0004] The present disclosure provides a technology capable of adjusting the temperature of an object in a wide temperature range.

[0005] According to one aspect of the present disclosure, there is provided a temperature adjustment system for adjusting the temperature of an object in contact with a structure, comprising: a liquid supply unit for supplying a liquid refrigerant to the structure; a gas supply unit for supplying a gas refrigerant to the structure; and a control unit for controlling the liquid supply unit and the gas supply unit. The control unit includes: a step of supplying and mixing the liquid refrigerant and the gas refrigerant when the temperature of the object is equal to or higher than a first temperature threshold, and cooling the structure by the latent heat of vaporization of the liquid refrigerant in a mist state; a step of cooling the structure by the liquid refrigerant supplied from the liquid supply unit when the temperature of the object is lower than the first temperature threshold and equal to or higher than a second temperature threshold lower than the first temperature threshold; and a step of cooling the structure by the gas refrigerant supplied from the gas supply unit when the temperature of the object is lower than the second temperature threshold.

[0006] According to one aspect, the temperature of an object can be adjusted in a wide temperature range.

[0007] This figure shows the overall configuration of an inspection apparatus having a temperature control system according to an embodiment. This figure schematically shows the temperature control system. This figure shows the operation of the mist cooling pattern of the temperature control system. This figure shows the operation of the liquid cooling pattern of the temperature control system. This figure shows the operation of the air cooling pattern of the temperature control system. This is an explanatory diagram showing the relationship between the temperature characteristics of the liquid refrigerant and the first and second temperature thresholds. This is a flowchart of the temperature control method according to an embodiment. This figure schematically shows a temperature control system having an external refrigerant device according to a modified example.

[0008] The following describes embodiments for implementing this disclosure with reference to the drawings. In each drawing, the same reference numerals are used for identical components, and redundant explanations may be omitted.

[0009] <Overall Configuration of Substrate Processing Apparatus> As shown in Figure 1, the substrate processing apparatus according to the embodiment of this disclosure is an inspection apparatus 1 that performs electrical testing of a wafer W, which is an example of a substrate. Multiple semiconductor devices to be inspected (devices under test) are formed on the wafer W. The substrate is not limited to wafer W, and may be a carrier on which semiconductor devices are arranged, a glass substrate, a single chip, an electronic circuit board, etc.

[0010] The inspection apparatus 1 comprises a loader 10 for transporting wafers W, a housing 20 positioned adjacent to the loader 10, a tester 30 positioned above the housing 20, a stage 40 housed within the housing 20, and a controller 90 for controlling each component of the inspection apparatus 1.

[0011] The loader 10 removes the wafer W from a container such as a FOUP (Front Opening Unified Pod) (not shown) and places it on a stage 40 that has moved within the housing 20. The loader 10 also removes the inspected wafer W from the stage 40 and places it in a container.

[0012] The housing 20 is formed as a roughly rectangular box and has an inspection space 21 inside for inspecting wafers W. A stage 40 for transporting wafers W is installed in the inspection space 21. The stage 40 receives and holds the wafers W from the loader 10 in the inspection space 21 and moves within the inspection space 21 in three dimensions (X-axis direction, Y-axis direction, Z-axis direction).

[0013] A probe card 32 is held in the upper part of the housing 20 via an interface 31. The interface 31 has a performance board (not shown) and several pogo blocks, and electrically connects the motherboard of the tester 30 to the probe card 32. The tester 30 is connected to the controller 90 of the inspection device 1 and performs inspection of the wafer W based on commands from the controller 90.

[0014] The probe card 32 has a plurality of probes 33 (probes) that protrude downward into the inspection space 21. Each probe 33 contacts the pads or solder bumps of each semiconductor device on the wafer W, which has been moved to an appropriate three-dimensional coordinate position by the stage 40 during inspection by the inspection device 1. The tester 30 performs an electrical inspection of each semiconductor device with each probe 33 in contact with each semiconductor device in a group. After inspecting each semiconductor device in a group, the controller 90 moves the stage 40 in the three-dimensional direction to shift its position on the wafer W, and the tester 30 sequentially inspects each semiconductor device in other groups, thereby inspecting all of the semiconductor devices.

[0015] The stage 40 includes a movable section 41 (X-axis moving mechanism 42, Y-axis moving mechanism 43, Z-axis moving mechanism 44) that can move in the X-axis, Y-axis, and Z-axis directions, a mounting table 45, and a stage control unit 49. The housing 20 comprises the movable section 41 and mounting table 45 of the stage 40, and the stage control unit 49.

[0016] The moving unit 41 moves the mounting table 45 in the X-axis, Y-axis, and Z-axis directions based on power supply from the stage control unit 49. The mounting table 45 has a mounting surface 45s on which the wafer W is directly placed. In addition to moving the mounting table 45 in the X-axis, Y-axis, and Z-axis directions, the moving unit 41 may also be configured to rotate the mounting table 45 around an axis (θ direction).

[0017] The stage control unit 49 is connected to the controller 90 and controls the operation of the stage 40 based on commands from the controller 90. The stage control unit 49 includes, for example, an integrated control unit that controls the operation of the entire stage 40, a PLC, motor driver, power supply unit, etc., that control the operation of the moving unit 41 (neither of which are shown).

[0018] The controller 90 includes a control unit 91 that controls the entire inspection device 1, and a user interface 95 connected to the control unit 91. The control unit 91 is an information processing unit having a processor 92, memory 93, an input / output interface (not shown), and electronic circuits. The processor 92 is a combination of one or more of the following: CPU (Central Processing Unit), GPU (Graphics Processing Unit), ASIC (Application Specific Integrated Circuit), FPGA (Field-Programmable Gate Array), and circuits made of multiple discrete semiconductors. The memory 93 includes a main memory made of semiconductor memory, and an auxiliary memory made of disks and semiconductor memory (flash memory). The memory 93 may be configured by appropriately combining volatile memory and non-volatile memory (for example, compact disks, DVDs (Digital Versatile Discs), hard disks, flash memory, etc.). In other words, in this disclosure, the controller 90 is an electronic circuit having a CPU, GPU, ASIC, FPGA, etc., and performs various control operations described in this specification by executing instruction codes stored in the memory 93 or by being circuit-designed for special applications.

[0019] On the other hand, the user interface 95 can be a keyboard for the user to input commands, etc., or a display that visualizes and displays the operating status of the inspection device 1. Alternatively, the user interface 95 may be a touch panel, mouse, microphone, speaker, or other device.

[0020] The controller 90 controls the operation of the tester 30 based on the contact state between each probe 33 and the wafer W to inspect each semiconductor device on the wafer W. The tester 30 transmits an electrical signal to each semiconductor device on the wafer W and receives the device signal in response from each semiconductor device to determine, for example, whether or not there is an abnormality in each semiconductor device.

[0021] <Temperature Control System 50> The stage 40 of the inspection apparatus 1 is also equipped with a temperature control system 50, which allows the temperature of the wafer W to be adjusted during wafer W inspection. This enables the inspection apparatus 1 to inspect the electrical characteristics of the wafer W under various temperature conditions. In particular, the temperature control system 50 according to this embodiment enables temperature adjustment of the wafer W over a wide temperature range (for example, 200°C to -60°C).

[0022] Specifically, the temperature control system 50 includes a structure 47 of the mounting base 45, a heater 48 installed inside the structure 47, and an external refrigerant device 60 installed outside the housing 20. The temperature control system 50 also includes a control unit for controlling the external refrigerant device 60. In this embodiment, the temperature control system 50 uses the controller 90 of the inspection device 1 as this control unit.

[0023] The mounting platform 45 of the stage 40 is constructed by stacking multiple components such as a bottom plate 46 and a structure 47. The structure 47 of the temperature control system 50 is also a top plate on the mounting platform 45 that has a mounting surface 45s on which the wafer W is placed.

[0024] The bottom plate 46 is a component that attaches the mounting base 45 (structure 47) to the Z-axis movement mechanism 44. The bottom plate 46 may be equipped with an insulating structure or a heat dissipation structure that suppresses heat from the structure 47 from being directed toward the Z-axis movement mechanism 44.

[0025] The heater 48 may be a heater sheet or an electric heating wire. The heater 48 is connected to a temperature control driver in a stage control unit 49 located in the lower part of the housing 20, and power is supplied as appropriate based on the control of the temperature control driver by the controller 90 to heat the structure 47 and the wafer W to the target temperature. The heater 48 may be configured to be divided into multiple regions in the planar direction (horizontal direction) of the mounting surface 45s, allowing each region to be individually temperature-controlled.

[0026] The structure 47 is formed in the shape of a disc with a diameter slightly larger than the diameter of the wafer W to be placed on it, and functions as a chuck (substrate support) to support the wafer W. The structure 47 may also be equipped with a holding means capable of holding the wafer W to be placed on it. This holding means can be a suction mechanism for attracting the wafer W, a mechanical mechanism for mechanically engaging the wafer W, or an electrostatic adsorption mechanism for electrostatically adsorbing the wafer W.

[0027] As shown in Figure 2, in order to adjust the temperature of the wafer W placed on the structure 47, the temperature control system 50 has a group of refrigerant flow paths 47p inside the structure 47. The group of refrigerant flow paths 47p comprises a plurality of heat exchange chambers 51 and a plurality of flow paths, and adopts a microchannel structure that allows refrigerant to be discharged from each heat exchange chamber 51. In detail, the flow paths of the group of refrigerant flow paths 47p include a liquid refrigerant supply path 52 that supplies liquid refrigerant to each heat exchange chamber 51, a gaseous refrigerant supply path 54 that supplies gaseous refrigerant to each heat exchange chamber 51, and a refrigerant discharge path 56 that discharges the refrigerant from each heat exchange chamber 51.

[0028] Furthermore, the structure 47 is equipped with the heater 48 in the wall portion 471 between the wafer W mounting surface 45s and each heat exchange chamber 51. The wall portion 471 constitutes the ceiling wall of each heat exchange chamber 51 and is also the part that comes into contact with the refrigerant discharged into each heat exchange chamber 51. In other words, the wall portion 471 functions as a heat transfer section that transfers heat from the heater 48 to the wafer W and performs heat exchange with the refrigerant in each heat exchange chamber 51. In addition, the wall portion 471 may be provided with a temperature sensor (not shown) capable of detecting the actual temperature of the wafer W during inspection, etc. Furthermore, the surface of the wall portion 471 on the heat exchange chamber 51 side may be provided with a heat exchange structure such as a porous body or a lattice structure that can promote heat exchange with the refrigerant.

[0029] The structure 47 is preferably made of a material with high thermal conductivity, such as aluminum, copper or pure copper, aluminum alloy, copper alloy, or ceramics. However, the structure 47 is not limited to these materials, and stainless steel such as SUS may also be used. In Figure 2, the structure 47 is described as a single component, but the structure 47 may be constructed by assembling multiple components. For example, the structure 47 may be assembled by stacking multiple components having grooves and holes for forming a group of refrigerant flow paths 47p.

[0030] Each heat exchange chamber 51 circulates the refrigerant (liquid refrigerant, gaseous refrigerant) while keeping it in contact with the wall portion 471. Each heat exchange chamber 51 extends in a direction parallel to the mounting surface 45s (horizontal direction) and is arranged in a direction parallel to the mounting surface 45s in order to adjust the temperature of the mounting surface 45s to be approximately uniform. For example, each heat exchange chamber 51 is arranged in a matrix shape, or radially and concentrically with the center of the structure 47 as the starting point, in a plan view of the cross section of the structure 47. However, the shape, number, and arrangement of each heat exchange chamber 51 are not particularly limited, and for example, it may be a configuration in which one space is continuous in the horizontal direction, or it may be formed in groove-shaped flow channels extending in a concentric or spiral shape.

[0031] Each of the multiple heat exchange chambers 51 is connected to a common refrigerant supply passage 55 through which refrigerant can flow into the heat exchange chamber 51, and to a common refrigerant discharge passage 57 through which refrigerant can be discharged from the heat exchange chamber 51. In Figure 2, the common refrigerant supply passage 55 and the common refrigerant discharge passage 57 are connected to (opened to) the lower surface of the heat exchange chamber 51 facing the wall 471, but they may also be connected to the side walls of the heat exchange chamber 51. Furthermore, each heat exchange chamber 51 may be a cavity in which refrigerant can be temporarily retained, or it may simply be a passage through which refrigerant is circulated. For example, each heat exchange chamber 51 is set to have a volume larger than the volume of the common refrigerant supply passage 55, and the liquid refrigerant discharged from the common refrigerant supply passage 55 is temporarily retained there before being discharged to the common refrigerant discharge passage 57.

[0032] Each heat exchange chamber 51 is connected to a liquid refrigerant supply passage 52, a gaseous refrigerant supply passage 54, and a refrigerant discharge passage 56. Specifically, the liquid refrigerant supply passage 52 extends horizontally within the structure 47 and connects to one end of each of the multiple liquid refrigerant branch passages 53 along its extension. The other ends of the multiple liquid refrigerant branch passages 53 connect to the sides of each of the multiple common refrigerant supply passages 55. As a result, when liquid refrigerant is supplied from the external refrigerant device 60 to the liquid refrigerant supply passage 52, the liquid refrigerant flows horizontally within the liquid refrigerant supply passage 52 and is divided into each liquid refrigerant branch passage 53. The liquid refrigerant then flows from each liquid refrigerant branch passage 53 into the common refrigerant supply passage 55 and is supplied to the heat exchange chamber 51 via the common refrigerant supply passage 55.

[0033] Meanwhile, the gaseous refrigerant supply passage 54 also extends horizontally within the structure 47, and along its extension, it communicates with one end of each of the multiple common refrigerant supply passages 55. Each common refrigerant supply passage 55 extends vertically and linearly within the structure 47. The other end of each common refrigerant supply passage 55 communicates with the heat exchange chamber 51. As a result, when gaseous refrigerant is supplied from the external refrigerant device 60 to the gaseous refrigerant supply passage 54, the gaseous refrigerant flows horizontally through the gaseous refrigerant supply passage 54 and is divided into each common refrigerant supply passage 55. The gaseous refrigerant is then supplied from each common refrigerant supply passage 55 to the heat exchange chamber 51.

[0034] Furthermore, the refrigerant discharge passage 56 extends horizontally within the structure 47 and communicates with one end of each of the multiple common refrigerant discharge passages 57 along its extension. Each common refrigerant discharge passage 57 extends vertically and linearly within the structure 47. The other end of each common refrigerant discharge passage 57 communicates with the heat exchange chamber 51. As a result, the refrigerant in each heat exchange chamber 51 is discharged into the connected common refrigerant discharge passage 57 and circulates within each common refrigerant discharge passage 57. The refrigerant in each common refrigerant discharge passage 57 then circulates through the refrigerant discharge passage 56 and is discharged to the external refrigerant device 60 installed outside the structure 47.

[0035] The external refrigerant device 60 has the function of selectively supplying one or both of liquid refrigerant and gaseous refrigerant to the structure 47, and the function of recovering and circulating the refrigerant in the structure 47. The external refrigerant device 60 is connected to the controller 90 and performs selective supply of refrigerant and recovery of refrigerant based on the control of the controller 90. For example, the external refrigerant device 60 includes a liquid supply unit 61, a gas supply unit 63, and a gas-liquid separator 65.

[0036] The liquid supply unit 61 is a supply source that supplies liquid refrigerant to the structure 47, and has the functions of temporarily storing liquid refrigerant, adjusting the temperature of the liquid refrigerant, and acting as a pump to pump the liquid refrigerant. The liquid supply unit 61 is connected to the liquid refrigerant path 62 and pumps the temperature-adjusted liquid refrigerant to this liquid refrigerant path 62. A chiller capable of controlling the temperature of the liquid refrigerant can be applied to this liquid supply unit 61.

[0037] The liquid refrigerant path 62 is connected to a port (not shown) provided on the mounting base 45 (structure 47), thereby connecting to the liquid refrigerant supply path 52 within the structure 47. A flow controller 621, an on / off valve 622, etc., may also be provided at an intermediate position in the liquid refrigerant path 62. The flow controller 621 controls the flow rate of liquid refrigerant supplied to the liquid refrigerant supply path 52 based on the control of the controller 90. The on / off valve 622 switches the supply and cessation of liquid refrigerant by opening and closing the flow path of the liquid refrigerant path 62 based on the control of the controller 90. In addition, the liquid refrigerant path 62 may also be provided with a temperature sensor to detect the temperature of the liquid refrigerant, a pressure sensor to detect the pressure of the liquid refrigerant, etc.

[0038] The liquid refrigerant supplied by the liquid supply unit 61 should be selected from known refrigerants according to the temperature range used to adjust the temperature of the wafer W. However, in order to reduce the environmental impact, it is more preferable not to use fluorine-based refrigerants. In this case, for example, water (H) may be used as the liquid refrigerant. ２ O), ethylene glycol (C ２ H ６ O ２ Examples include ) and mixtures thereof. Other additives may be mixed with the liquid refrigerant. In this embodiment, water is used as the liquid refrigerant. Water has the advantage of having excellent thermal conductivity and a wide range of boiling and freezing points.

[0039] Furthermore, the gas supply unit 63 is a supply source that supplies gaseous refrigerant to the structure 47, and has the function of adjusting the temperature of the gaseous refrigerant and the function of a pump that pressurizes the gaseous refrigerant. The gas supply unit 63 is connected to the gaseous refrigerant path 64 and pressurizes the temperature-adjusted gaseous refrigerant to this gaseous refrigerant path 64. A cooler capable of temperature control of the gaseous refrigerant (especially a vortex cooler) can be applied to this gas supply unit 63.

[0040] The gaseous refrigerant path 64 is connected to a gaseous refrigerant supply path 54 within the structure 47 by being connected to a port (not shown) provided on the mounting base 45 (structure 47). A flow controller 641, an on / off valve 642, etc., may also be provided at an intermediate position in the gaseous refrigerant path 64. The flow controller 641 controls the flow rate of the gaseous refrigerant supplied to the gaseous refrigerant supply path 54 based on the control of the controller 90. The on / off valve 642 switches the supply and cessation of the gaseous refrigerant by opening and closing the flow path of the gaseous refrigerant path 64 based on the control of the controller 90. In addition, the gaseous refrigerant path 64 may also be provided with a temperature sensor to detect the temperature of the gaseous refrigerant, a pressure sensor to detect the pressure of the gaseous refrigerant, etc.

[0041] The gaseous refrigerant supplied by the gas supply unit 63 may also be appropriately selected from well-known refrigerants according to the temperature range and the like when adjusting the temperature of the wafer W. However, in order to reduce the environmental impact, it is more preferable not to use fluorine-based refrigerants as the gaseous refrigerant. Examples of the gaseous refrigerant in this case include air, nitrogen (N ２ ), inert gases such as nitrogen (N ２ ), ammonia (NH ３ ), and the like, or mixtures thereof. The gaseous refrigerant according to the embodiment applies air to suppress costs.

[0042] On the other hand, the gas-liquid separator 65 is connected to the refrigerant recovery path 66 and separates the refrigerant recovered from the refrigerant recovery path 66 into a liquid refrigerant and a gaseous refrigerant. Further, a liquid refrigerant circulation path 651 communicating with the liquid supply unit 61 and a gaseous refrigerant circulation path 652 communicating with the gas supply unit 63 are connected to the gas-liquid separator 65. That is, the gas-liquid separator 65 circulates the separated liquid refrigerant to the liquid supply unit 61 through the liquid refrigerant circulation path 651. Further, the gas-liquid separator 65 circulates the separated gaseous refrigerant to the gas supply unit 63 through the gaseous refrigerant circulation path 652. Note that the gas-liquid separator 65 may have a function of a pump for circulating the liquid refrigerant. As a result, the liquid supply unit 61 may not have a pump function.

[0043] The external refrigerant device 60 can reduce the cost during temperature adjustment by circulating the liquid refrigerant and the gaseous refrigerant through the gas-liquid separator 65. However, the external refrigerant device 60 does not necessarily have to be configured to circulate the liquid refrigerant and / or the gaseous refrigerant. For example, when air is used as the gaseous refrigerant, since it hardly costs, the external refrigerant device 60 may be configured to discard the separated gaseous refrigerant to the outside without providing the gaseous refrigerant circulation path 652 in the gas-liquid separator 6 . Alternatively, the external refrigerant device 60 may be configured to discard the liquid refrigerant and / or the gaseous refrigerant discharged from the structure 47 to the outside without providing the gas-liquid separator 65.

[0044] As described above, the external refrigerant device 60 can selectively supply one or both of the liquid refrigerant and the gas refrigerant to the structure 47 based on the control of the controller 90. Then, as shown in FIG. 3, the temperature adjustment system 50 can supply the atomized mist-like liquid refrigerant to each heat exchange chamber 51 by simultaneously supplying both the liquid refrigerant and the gas refrigerant. Hereinafter, in order to distinguish it from the non-atomized liquid refrigerant, the mist-like liquid refrigerant is also referred to as a mist refrigerant, and the pattern of supplying the mist refrigerant is also referred to as a mist cooling pattern.

[0045] Specifically, the controller 90 controls the liquid supply unit 61, the flow controller 621, and the on-off valve 622 to supply the liquid refrigerant from the liquid supply unit 61 to the liquid refrigerant path 62 and allow the liquid refrigerant to flow into the liquid refrigerant supply path 52 of the structure 47 through the liquid refrigerant path 62. In the supply of the liquid refrigerant, the controller 90 controls the pressure of the liquid refrigerant in the liquid refrigerant supply path 52 to be less than a predetermined value by adjusting the flow rate of the liquid refrigerant. As a result, the liquid refrigerant flowing into the liquid refrigerant supply path 52 is suppressed from immediately flowing into each liquid refrigerant branch path 53 and fills the liquid refrigerant supply path 52.

[0046] Furthermore, the controller 90 controls the gas supply unit 63, the flow controller 641, and the on-off valve 642 to supply the gas refrigerant from the gas supply unit 63 to the gas refrigerant path 64 and allow the gas refrigerant to flow into the gas refrigerant supply path 54 of the structure 47 through the gas refrigerant path 64. In the supply of the gas refrigerant, the controller 90 increases the pressure of the gas refrigerant in the gas refrigerant supply path 54 by adjusting the flow rate of the gas refrigerant. As a result, the gas refrigerant flowing into the gas refrigerant supply path 54 vigorously flows into each refrigerant supply common path 55.

[0047] The gaseous refrigerant flowing into each common refrigerant supply passage 55 flows from the common refrigerant supply passage 55 into the heat exchange chamber 51. At this time, the gaseous refrigerant creates a differential pressure with respect to the liquid refrigerant branch passage 53 which communicates with the side of the common refrigerant supply passage 55, drawing the liquid refrigerant from the liquid refrigerant branch passage 53 and the liquid refrigerant supply passage 52 into the common refrigerant supply passage 55 (Bernoulli's principle). As a result, negative pressure is also created in the liquid refrigerant supply passage 52, drawing the supplied liquid refrigerant into each liquid refrigerant branch passage 53. Furthermore, the liquid refrigerant drawn into the common refrigerant supply passage 55 becomes mixed with the gaseous refrigerant downstream (upper) of the connection point of the liquid refrigerant branch passage 53. This liquid refrigerant diffuses as it is transported by the gaseous refrigerant, becoming a mist refrigerant, which is then discharged into the heat exchange chamber 51.

[0048] The mist refrigerant discharged into the heat exchange chamber 51 vaporizes (evaporates) upon contact with or near the wall 471 of the heat exchange chamber 51 due to heat received from the wall 471. In this vaporization of the mist refrigerant, the droplets (water) of the mist refrigerant change into vapor without producing bubbles. The latent heat of vaporization of the droplets can significantly remove heat from the wall 471. Furthermore, because the vaporized water is easily movable, it hardly remains in the heat exchange chamber 51 and flows from the heat exchange chamber 51 into the refrigerant discharge common passage 57. The vaporized water, along with the gaseous refrigerant air, moves from the refrigerant discharge common passage 57 to the refrigerant discharge passage 56, and is discharged from the refrigerant discharge passage 56 to the refrigerant recovery path 66 outside the structure 47.

[0049] The water and air discharged into the refrigerant recovery path 66 flow into the gas-liquid separator 65. The gas-liquid separator 65 recovers the incoming water as liquid refrigerant and circulates the liquid refrigerant to the liquid supply unit 61 via the liquid refrigerant circulation path 651. The liquid supply unit 61 can then re-temperature-adjust the liquid refrigerant and supply it to the liquid refrigerant path 62. The gas-liquid separator 65 also recovers the incoming air as gaseous refrigerant and circulates the gaseous refrigerant to the gas supply unit 63 via the gaseous refrigerant circulation path 652. The gas supply unit 63 can then re-temperature-adjust the gaseous refrigerant and supply it to the gaseous refrigerant path 64.

[0050] In this way, the temperature control system 50 can effectively remove heat from the structure 47 and the wafer W by discharging mist refrigerant, which is a liquid refrigerant in the form of a mist, into each heat exchange chamber 51. Moreover, since the mist refrigerant is discharged without accumulating in the heat exchange chamber 51, the heat exchange efficiency can be further increased. In particular, when the target temperature during wafer W inspection is high, the mist refrigerant is more easily vaporized in each heat exchange chamber 51, which can further promote the efficiency of heat removal.

[0051] Furthermore, as shown in Figures 4A and 4B, the temperature control system 50 can also supply either a liquid refrigerant or a gaseous refrigerant to the structure 47 based on the control of the controller 90. Hereinafter, the pattern in which only a liquid refrigerant (not a mist refrigerant) is supplied will be referred to as the liquid cooling pattern, and the pattern in which only a gaseous refrigerant is supplied will be referred to as the gaseous cooling pattern.

[0052] For example, when the temperature control system 50 selects a liquid cooling pattern, it supplies only liquid refrigerant to the structure 47, as shown in Figure 4A. In this case, the controller 90 controls the liquid supply unit 61, the flow controller 621, and the on / off valve 622 (see also Figure 2) to circulate the liquid refrigerant from the liquid supply unit 61, through the liquid refrigerant path 62, and then through the liquid refrigerant supply path 52 of the structure 47. At this time, the controller 90 stops the supply of gaseous refrigerant by closing the on / off valve 642 of the gaseous refrigerant path 64.

[0053] Furthermore, the controller 90 adjusts the flow rate of the liquid refrigerant during the supply of the liquid refrigerant, thereby increasing the pressure of the liquid refrigerant in the liquid refrigerant supply passage 52 to a level greater than the pressure used when generating mist refrigerant. This ensures that the liquid refrigerant flowing into the liquid refrigerant supply passage 52 immediately flows into each liquid refrigerant branch passage 53. The liquid refrigerant flowing into each liquid refrigerant branch passage 53 then moves to the common refrigerant supply passage 55 and is discharged from this common refrigerant supply passage 55 to the heat exchange chamber 51. In the heat exchange chamber 51, the liquid refrigerant exchanges heat with the wall 471 while largely maintaining its liquid state (however, some of the liquid refrigerant may vaporize).

[0054] The liquid refrigerant then moves through the heat exchange chamber 51 over a longer period than it does during vaporization, and flows from the heat exchange chamber 51 into the common refrigerant discharge passage 57. The liquid refrigerant then moves from the common refrigerant discharge passage 57 to the refrigerant discharge passage 56, and from the refrigerant discharge passage 56 to the refrigerant recovery passage 66 outside the structure 47. The liquid refrigerant discharged into the refrigerant recovery passage 66 flows into the gas-liquid separator 65 and circulates to the liquid supply unit 61 via the liquid refrigerant circulation passage 651. This allows the liquid supply unit 61 to re-temperature-regulate the liquid refrigerant and supply it to the liquid refrigerant passage 62.

[0055] In this way, the temperature control system 50 can remove heat from the structure 47 and wafer W by discharging liquid refrigerant into each heat exchange chamber 51. This liquid refrigerant easily exchanges heat with the wall portion 471 substantially uniformly as it flows through the heat exchange chamber 51. Therefore, the in-plane temperature uniformity of the wall portion 471 and wafer W can be improved.

[0056] On the other hand, when the temperature control system 50 selects the air cooling pattern, it supplies only gaseous refrigerant to the structure 47, as shown in Figure 4B. In this case, the controller 90 controls the gas supply unit 63, the flow controller 641, and the on / off valve 642 (see also Figure 2) to circulate the gaseous refrigerant from the gas supply unit 63, through the gaseous refrigerant path 64, and then through the gaseous refrigerant supply path 54 of the structure 47. At this time, the controller 90 stops the supply of liquid refrigerant by closing the on / off valve 622 of the liquid refrigerant path 62.

[0057] Furthermore, the controller 90 adjusts the temperature and flow rate of the gaseous refrigerant during its supply. For example, it sets the pressure of the gaseous refrigerant in the gaseous refrigerant supply passage 54 to be higher than the pressure used when generating mist refrigerant, and sets the temperature of the gaseous refrigerant to be lower than the temperature used when generating mist refrigerant. As a result, the gaseous refrigerant moves smoothly through the gaseous refrigerant supply passage 54 and the common refrigerant supply passages 55 and is discharged into the heat exchange chamber 51. In the heat exchange chamber 51, the liquid refrigerant is sprayed directly onto the wall 471, thereby removing heat from the wall 471.

[0058] The gaseous refrigerant then moves easily within the heat exchange chamber 51 and flows from the heat exchange chamber 51 into the common refrigerant discharge passage 57. The gaseous refrigerant then moves from the common refrigerant discharge passage 57 to the refrigerant discharge passage 56 and is discharged from the refrigerant discharge passage 56 to the refrigerant recovery passage 66 outside the structure 47. The gaseous refrigerant discharged into the refrigerant recovery passage 66 flows into the gas-liquid separator 65 and circulates to the gas supply unit 63 via the gaseous refrigerant circulation passage 652. As a result, the gas supply unit 63 can re-temperature-regulate the gaseous refrigerant and supply it to the gaseous refrigerant passage 64.

[0059] In this way, the temperature control system 50 can also remove heat from the structure 47 and wafer W by discharging a low-temperature, high-pressure gaseous refrigerant into each heat exchange chamber 51. This gaseous refrigerant is smoothly discharged from the heat exchange chamber 51 after hitting, for example, the wall portion 471 of the heat exchange chamber 51. As a result, it becomes possible to continuously supply the wall portion 471 with a low-temperature gaseous refrigerant, and again, the temperature of the structure 47 and wafer W can be sufficiently lowered.

[0060] The controller 90 can select a mist cooling pattern, a liquid cooling pattern, and an air cooling pattern based, for example, the target temperature when adjusting the temperature of the wafer W and the temperature characteristics of the liquid refrigerant. As an example, as shown in Figure 5, the mist cooling pattern is selected when the target temperature is high, the air cooling pattern is selected when the target temperature is low, and the liquid cooling pattern is selected when the target temperature is between high and low. In Figure 5, the rod-shaped frame shows the temperature characteristics of the liquid refrigerant. The black triangle at the bottom of the frame is the boiling point of the liquid refrigerant, and the white triangle at the bottom of the frame is the freezing point of the liquid refrigerant. If the liquid refrigerant is water, the boiling point is 100°C and the freezing point is 0°C.

[0061] The controller 90 has a first temperature threshold as a criterion for determining whether to select a mist cooling pattern or a liquid cooling pattern, and a second temperature threshold for determining whether to select an air cooling pattern or a liquid cooling pattern. In this case, the second temperature threshold is set to a temperature lower than the first temperature threshold.

[0062] It is preferable to set the first temperature threshold to a value below and close to the boiling point of the liquid refrigerant. Specifically, the first temperature threshold should be set within a range of -10°C relative to the boiling point of the liquid refrigerant. In other words, if the liquid refrigerant is water, the first temperature threshold is set to an appropriate temperature within the range of 100°C to 90°C. By setting the first temperature threshold within the range of 100°C to 90°C in this way, the temperature control system 50 can ensure that water flows smoothly in liquid form through each flow path (liquid refrigerant path 62, liquid refrigerant supply path 52, liquid refrigerant branch path 53). In this embodiment, the first temperature threshold is set to 95°C.

[0063] The second temperature threshold is preferably set to a value that is above and close to the freezing point of the liquid refrigerant. Specifically, the second temperature threshold is preferably set within a range of +10°C above the freezing point of the liquid refrigerant. In other words, if the liquid refrigerant is water, the second temperature threshold is set to an appropriate temperature within the range of 0°C to 10°C. By setting the second temperature threshold within the range of 0°C to 10°C in this way, the temperature control system 50 can ensure that water flows smoothly in liquid form through each flow path (liquid refrigerant path 62, liquid refrigerant supply path 52, liquid refrigerant branch path 53). In this embodiment, the second temperature threshold is set to 5°C.

[0064] Furthermore, the temperature control system 50 is not limited to selecting a mist cooling pattern, liquid cooling pattern, or air cooling pattern based on the target temperature of the wafer W, but may also select each pattern based on the actual temperature detected by the temperature sensor. For example, if the actual temperature of the wafer W drops from below a first temperature threshold to above the first temperature threshold while the wafer W is being inspected, the system may switch from the liquid cooling pattern to the mist cooling pattern. Alternatively, if the actual temperature of the wafer W rises from below a second temperature threshold to above the second temperature threshold while the wafer W is being inspected, the system may switch from the air cooling pattern to the liquid cooling pattern.

[0065] The inspection apparatus 1 and temperature control system 50 according to this embodiment are basically configured as described above, and their operation (temperature control method) will be explained below with reference to the flowchart in Figure 6.

[0066] The controller 90 of the inspection apparatus 1 controls each component of the inspection apparatus 1, including the temperature control system 50, to adjust the temperature of the wafer W to a target temperature during the inspection of the wafer W, and executes steps S101 to S115.

[0067] The controller 90 first reads the target temperature of the wafer W set by the user from the memory 93, and decides to adjust the temperature of the wafer W to this target temperature and perform the inspection (step S101).

[0068] The controller 90 then determines whether the read target temperature is equal to or greater than the first temperature threshold (step S102). If the target temperature is equal to or greater than the first temperature threshold (step S102: YES), it decides to perform a mist cooling pattern and proceeds to step S103.

[0069] In step S103, the controller 90 controls the heater 48 of the temperature control system 50 to adjust the temperature of the wafer W to the target temperature. For example, if the target temperature of the wafer W is 150°C, the controller adjusts the amount of heating from the heater 48 to reach the target temperature. At this time, the temperature control system 50 stops the operation of the liquid supply unit 61 and the gas supply unit 63.

[0070] The controller 90 detects the actual temperature of the wafer W using a temperature sensor, and when the actual temperature reaches the target temperature, it starts inspecting the wafer W (step S104). During the inspection of the wafer W, as described above, power is supplied to the wafer W from each probe 33 of the probe card 32, causing the temperature of the wafer W itself to rise.

[0071] The controller 90 detects the actual temperature of the wafer W using a temperature sensor and monitors (determines) whether the actual temperature has risen above a certain level from the target temperature (step S105). If the actual temperature has risen above a certain level (step S105: YES), the process proceeds to step S106 and executes the mist cooling pattern.

[0072] In the mist cooling pattern of step S106, the controller 90 supplies liquid refrigerant from the liquid supply unit 61 and gaseous refrigerant from the gas supply unit 63 to generate mist refrigerant within the structure 47 and discharges the mist refrigerant to each heat exchange chamber 51 (see also Figure 3). At this time, the controller 90 stops driving the heater 48 and executes only the mist cooling pattern.

[0073] In the mist cooling pattern, the controller 90 controls the temperature control system 50 to supply liquid and gaseous refrigerants to the structure 47, with their temperatures adjusted based on the target temperature of the wafer W. For example, if the target temperature of the wafer W is 150°C, the liquid supply unit 61 adjusts the temperature of the liquid refrigerant to 95°C before supplying it. Alternatively, the gas supply unit 63 may supply gaseous refrigerant at room temperature (around 25°C) without adjusting its temperature. Or, the gas supply unit 63 may heat the gaseous refrigerant to raise its temperature to around room temperature to 120°C before supplying it. The temperature-adjusted liquid and gaseous refrigerants are then generated as mist refrigerants within the structure 47. The mist refrigerants then easily vaporize within each heat exchange chamber 51. This allows the heat from the wafer W and the wall portion 471, whose temperatures have risen, to be effectively removed using the latent heat of vaporization of the mist refrigerants. As a result, the temperature control system 50 can lower the temperature of the wafer W to near the target temperature.

[0074] Furthermore, in the mist cooling pattern, the controller 90 may maintain the temperature of the wafer W at the target temperature while power is supplied by continuously adjusting the temperature and supply amount of the mist refrigerant according to the actual temperature of the wafer W. In this case, if the temperature of the wafer W drops below a certain level from the target temperature, the heater 48 may be driven again to heat the wafer W. As a result, the temperature control system 50 can stably perform inspection of the wafer W while maintaining the temperature of the wafer W at the target temperature.

[0075] On the other hand, in step S102 of Figure 6, if the controller 90 determines that the target temperature of the wafer W is less than the first temperature threshold (step S102: NO), it proceeds to step S107. In step S107, the controller 90 determines whether the read target temperature of the wafer W is equal to or greater than the second temperature threshold. If the target temperature is equal to or greater than the second temperature threshold (step S107: YES), it decides to perform a liquid cooling pattern and proceeds to step S108.

[0076] In step S108, the controller 90 selects whether to drive the heater 48 or the liquid supply unit 61 according to the target temperature of the wafer W, and adjusts the temperature of the wafer W to the target temperature. For example, if the target temperature of the wafer W is 80°C, the controller adjusts the amount of heating from the heater 48 to reach the target temperature. Alternatively, if the target temperature of the wafer W is room temperature, the controller stops driving the heater 48 and the liquid supply unit 61.

[0077] The controller 90 detects the actual temperature of the wafer W using a temperature sensor, and when the actual temperature reaches the target temperature, it starts inspecting the wafer W (step S109). The controller 90 then monitors whether the actual temperature of the wafer W has risen above a certain level from the target temperature (step S110), and if the actual temperature has risen above a certain level (step S110: YES), it proceeds to step S111 and executes the liquid cooling pattern.

[0078] In the liquid cooling pattern of step S111, the controller 90 supplies liquid refrigerant from the liquid supply unit 61 to the structure 47, thereby discharging the liquid refrigerant to each heat exchange chamber 51 (see also Figure 4A). At this time, the controller 90 stops the operation of the heater 48 and executes only the liquid cooling pattern.

[0079] In the liquid cooling pattern, the controller 90 controls the temperature control system 50 to supply liquid refrigerant whose temperature is adjusted based on the target temperature of the wafer W. For example, if the target temperature of the wafer W is 80°C, the liquid supply unit 61 adjusts the temperature of the liquid refrigerant to less than 80°C (for example, 50°C to 70°C) and supplies the liquid refrigerant. Also, for example, if the target temperature of the wafer W is room temperature, the liquid supply unit 61 adjusts the temperature of the liquid refrigerant to less than room temperature (for example, 5°C to 20°C) and supplies the liquid refrigerant. Furthermore, the controller 90 may maintain the temperature of the wafer W at the target temperature while power is supplied by continuously adjusting the temperature and supply amount of the liquid refrigerant according to the actual temperature of the wafer W. In this case, if the temperature of the wafer W drops below a certain level from the target temperature, the heater 48 may be driven to heat the wafer W. As a result, the temperature control system 50 can stably inspect the wafer W while maintaining the temperature of the wafer W at the target temperature.

[0080] On the other hand, in step S107 of Figure 6, when the controller 90 determines that the target temperature of the wafer W is below the second temperature threshold (step S107: NO), it decides to perform an air cooling pattern and proceeds to step S112.

[0081] In step S112, the controller 90 selects the drive of the gas supply unit 63 according to the target temperature of the wafer W to perform an air cooling pattern and adjust the temperature of the wafer W to the target temperature. For example, if the target temperature of the wafer W is -30°C, the gaseous refrigerant temperature is adjusted to -30°C (or below -30°C) and the gaseous refrigerant is supplied. In the air cooling pattern, the drive of the heater 48 is stopped.

[0082] The controller 90 detects the actual temperature of the wafer W using a temperature sensor, and when the actual temperature reaches the target temperature, it starts inspecting the wafer W (step S113). The controller 90 then monitors whether the actual temperature of the wafer W has risen above a certain level from the target temperature (step S114), and if the actual temperature has risen above a certain level (step S114: YES), it proceeds to step S115 and executes the air cooling pattern. If the target temperature of the wafer W is below the second temperature threshold, the air cooling pattern may be continuously executed before and during the inspection.

[0083] In step S115, the controller 90 discharges gaseous refrigerant to each heat exchange chamber 51 by supplying gaseous refrigerant at a temperature lower than the target temperature from the gas supply unit 63 (see also Figure 4B). This lowers the temperature of the wafer W, which has risen due to inspection. Furthermore, the controller 90 may maintain the temperature of the wafer W at the target temperature while power is supplied by adjusting the temperature and supply amount of gaseous refrigerant according to the actual temperature of the wafer W. In this case, if the temperature of the wafer W drops below a certain level from the target temperature, the heater 48 may be driven to heat the wafer W. As a result, the temperature control system 50 can stably perform inspection of the wafer W while maintaining the temperature of the wafer W at the target temperature.

[0084] As described above, the temperature control method according to the embodiment can adjust the temperature of the wafer W over a wide temperature range by selectively executing a mist cooling pattern, a liquid cooling pattern, and an air cooling pattern according to the target temperature or actual temperature of the wafer W. As a result, the temperature control system 50 and the temperature control method can perform wafer W inspections and the like successfully. In particular, the mist cooling pattern prevents the refrigerant from accumulating in the form of bubbles (hot spots) in each heat exchange chamber 51 by the mist refrigerant, and can stably maintain the temperature of the wafer W at the target temperature.

[0085] The temperature control system 50 according to this disclosure is not limited to the above-described embodiment and can be modified in various ways. For example, the temperature control system 50 is not limited to application to the inspection apparatus 1, but may also be applied to a substrate processing apparatus that performs substrate processing such as film deposition, etching, and cleaning on a wafer W.

[0086] For example, the temperature control system 50 may switch patterns, such as executing a liquid cooling pattern to improve in-plane uniformity of temperature if the in-plane uniformity of the wafer W or wall portion 471 is deviated when executing a mist cooling pattern. Alternatively, the temperature control system 50 may switch patterns, such as executing a mist cooling pattern that can utilize the latent heat of vaporization, if a rapid temperature increase occurs when executing a liquid cooling pattern. In short, the temperature control system 50 may switch between selecting a mist cooling pattern, a liquid cooling pattern, and an air cooling pattern in response to the temperature change of the wafer W, which is the object to be temperature controlled.

[0087] Furthermore, if the freezing point of the refrigerant is sufficiently low for the temperature range to be controlled, the temperature control system 50 does not need to use the air cooling pattern. For example, the temperature control system 50 may switch from a first mode that automatically performs three patterns (mist cooling pattern, liquid cooling pattern, and air cooling pattern) to a second mode that automatically performs two patterns (mist cooling pattern and liquid cooling pattern, without the air cooling pattern). Conversely, if the boiling point of the refrigerant is sufficiently high for the temperature range to be controlled, the temperature control system 50 does not need to use the mist cooling pattern. For example, the temperature control system 50 may switch from a first mode that automatically performs three patterns (mist cooling pattern, liquid cooling pattern, and air cooling pattern) to a third mode that automatically performs two patterns (liquid cooling pattern and air cooling pattern, without the mist cooling pattern).

[0088] Furthermore, as shown in the modified example in Figure 7, the temperature control system 50 may not generate mist refrigerant within the structure 47, but instead install a mist generator 67 that generates mist refrigerant outside the structure 47 (external refrigerant device 60A). In this case, the external refrigerant device 60A branches the liquid refrigerant path 62 connected to the liquid supply unit 61 into a first liquid refrigerant path 62a connected to the structure 47 and a second liquid refrigerant path 62b connected to the mist generator 67. The external refrigerant device 60A also branches the gaseous refrigerant path 64 connected to the gas supply unit 63 into a first gaseous refrigerant path 64a connected to the structure 47 and a second gaseous refrigerant path 64b connected to the mist generator 67. Each of the first liquid refrigerant path 62a, the second liquid refrigerant path 62b, the first gaseous refrigerant path 64a, and the second gaseous refrigerant path 64b is equipped with an on / off valve (not shown) that can open and close the flow path.

[0089] The external refrigerant device 60A configured in this way can selectively execute a mist cooling pattern, a liquid cooling pattern, and an air cooling pattern, similar to the embodiment described above. For example, in the case of the mist cooling pattern, the first liquid refrigerant path 62a is blocked and the second liquid refrigerant path 62b is opened to supply liquid refrigerant to the mist generator 67, and the first gaseous refrigerant path 64a is blocked and the second gaseous refrigerant path 64b is opened to supply gaseous refrigerant to the mist generator 67. As a result, the mist generator 67 generates mist refrigerant internally and supplies this mist refrigerant to the structure 47 via the mist refrigerant path 68. This allows each heat exchange chamber 51 of the structure 47 to effectively remove heat using the mist refrigerant.

[0090] In the case of a liquid cooling pattern, the liquid refrigerant can be supplied directly to the structure 47 by opening the first liquid refrigerant path 62a and blocking the second liquid refrigerant path 62b. Similarly, in the case of an air cooling pattern, the gaseous refrigerant can be supplied directly to the structure 47 by opening the first gaseous refrigerant path 64a and blocking the second gaseous refrigerant path 64b.

[0091] Thus, even with a temperature control system 50 that includes a mist generator 67 outside the structure 47, it is possible to adjust the temperature of the wafer W over a wide temperature range. Moreover, the mist generator 67 installed externally can be easily maintained and replaced, and the refrigerant flow path group 47p of the structure 47 can be simplified.

[0092] The technical concept and effects of this disclosure, as described in the embodiments above, are described below.

[0093] A first aspect of the present disclosure is a temperature control system 50 for adjusting the temperature of an object (wafer W) in contact with a structure 47, comprising: a liquid supply unit 61 for supplying a liquid refrigerant to the structure 47; a gas supply unit 63 for supplying a gaseous refrigerant to the structure 47; and a control unit (controller 90) for controlling the liquid supply unit 61 and the gas supply unit 63, wherein the control unit controls the following steps: when the temperature of the object is above a first temperature threshold, the system cools the structure 47 by supplying a liquid refrigerant and a gaseous refrigerant and mixing them to form a mist, thereby cooling the structure 47 by the latent heat of vaporization of the liquid refrigerant; when the temperature of the object is below the first temperature threshold but above a second temperature threshold lower than the first temperature threshold, the system cools the structure 47 with a liquid refrigerant supplied from the liquid supply unit 61; and when the temperature of the object is below the second temperature threshold, the system cools the structure 47 with a gaseous refrigerant supplied from the gas supply unit 63.

[0094] As described above, the temperature control system 50 can adjust the temperature of an object over a wide temperature range by selectively performing a mist cooling pattern using a mist-like liquid refrigerant, a liquid cooling pattern using a liquid refrigerant, and an air cooling pattern using a gaseous refrigerant. In particular, by performing the mist cooling pattern above the first temperature threshold, the temperature of the object (wafer W) can be smoothly lowered by the latent heat of vaporization. Furthermore, by performing the liquid cooling pattern below the first temperature threshold and above the second temperature threshold, the heat of the object can be stably absorbed by the liquid refrigerant. In addition, by performing the air cooling pattern below the second temperature threshold, heat can be absorbed from the object while avoiding solidification of the liquid refrigerant.

[0095] Furthermore, the structure 47 has an internal microchannel structure comprising a plurality of heat exchange chambers 51 adjacent to the wall portion 471 that contacts the object (wafer W), and a group of refrigerant flow paths 47p capable of discharging mist-like liquid refrigerant, liquid refrigerant, and gaseous refrigerant, respectively, into the plurality of heat exchange chambers 51. This allows the temperature control system 50 to improve the in-plane temperature uniformity of the wall portion 471 and adjust the temperature of the object.

[0096] Furthermore, the refrigerant flow path group 47p has a refrigerant discharge path 56 that communicates with a plurality of heat exchange chambers 51 and can discharge refrigerant from the plurality of heat exchange chambers 51. As a result, the temperature control system 50 can efficiently discharge refrigerant from each heat exchange chamber 51, and can suppress the accumulation of refrigerant in each heat exchange chamber 51, which would create hot spots and reduce the heat exchange efficiency.

[0097] Furthermore, the system includes a liquid supply unit 61 and a gas supply unit 63, as well as external refrigerant devices 60 and 60A that communicate with the refrigerant discharge passage 56. The external refrigerant devices 60 and 60A circulate the refrigerant discharged from the refrigerant discharge passage 56 to the liquid supply unit 61 and the gas supply unit 63. This allows the temperature control system 50 to suppress the reduction of refrigerant and reduce the cost of temperature control.

[0098] Furthermore, the external refrigerant devices 60 and 60A are equipped with a gas-liquid separator 65 that separates the refrigerant in the refrigerant discharge passage 56 into liquid refrigerant and gaseous refrigerant. This allows the temperature control system 50 to easily separate the refrigerant discharged from the refrigerant discharge passage 56 into liquid refrigerant and gaseous refrigerant.

[0099] Furthermore, the liquid supply unit 61 is a chiller that adjusts the temperature of the liquid refrigerant and pumps the liquid refrigerant under pressure. This allows the liquid supply unit 61 to appropriately adjust the temperature of the liquid refrigerant and supply it to the structure 47.

[0100] Furthermore, the gas supply unit 63 is a cooler that adjusts the temperature of the gaseous refrigerant and also pumps the gaseous refrigerant under pressure. As a result, the gas supply unit 63 can appropriately adjust the temperature of the gaseous refrigerant and supply it to the structure 47.

[0101] Furthermore, the structure 47 mixes liquid refrigerant and gaseous refrigerant internally to generate a mist-like liquid refrigerant. This allows the temperature control system 50 to generate the mist-like liquid refrigerant at a position close to the object, thereby suppressing the accumulation of the mist refrigerant and its return to a liquid state.

[0102] Furthermore, the system includes a mist generator 67 that mixes liquid refrigerant and gaseous refrigerant outside the structure 47 to produce a mist-like liquid refrigerant. This allows the temperature control system 50 to generate the mist-like liquid refrigerant externally, and also facilitates maintenance and replacement of the mist generator 67.

[0103] Furthermore, the structure 47 is installed on the stage 40 that supports the substrate (wafer W), which is the object to be worked on. This allows the temperature control system 50 to adjust the temperature of the substrate supported on the stage 40 over a wide temperature range.

[0104] Furthermore, the stage 40 is applied to the inspection apparatus 1, which comprises a tester 30 for inspecting substrates (wafers W) and a probe card 32 installed on the tester 30, with the stage 40 positioned vertically below the probe card 32. As a result, the inspection apparatus 1 can adjust the temperature of the substrate over a wide temperature range using the temperature control system 50 during substrate inspection.

[0105] Furthermore, a second aspect of this disclosure is a temperature adjustment method for adjusting the temperature of an object (wafer W) in contact with a structure 47, comprising a liquid supply unit 61 for supplying a liquid refrigerant to the structure 47 and a gas supply unit 63 for supplying a gaseous refrigerant to the structure 47, wherein the temperature adjustment method includes the steps of: cooling the structure 47 by the latent heat of vaporization of the liquid refrigerant, which is made into a mist by mixing the liquid refrigerant and the gaseous refrigerant when the temperature of the object is above a first temperature threshold; cooling the structure 47 with the liquid refrigerant supplied from the liquid supply unit 61 when the temperature of the object is below the first temperature threshold but above a second temperature threshold lower than the first temperature threshold; and cooling the structure 47 with the gaseous refrigerant supplied from the gas supply unit 63 when the temperature of the object is below the second temperature threshold. Even in this case, the temperature adjustment method can adjust the temperature of the object over a wide temperature range.

[0106] The temperature control system 50 and temperature control method according to the embodiments disclosed herein are illustrative and not restrictive in all respects. The embodiments can be modified and improved in various ways without departing from the scope and spirit of the appended claims. The matters described in the above embodiments can be otherwise configured and combined in a non-consistent manner.

[0107] This application claims priority to Japanese Patent Application No. 2024-175297, a basic application filed with the Japan Patent Office on October 4, 2024, the entire contents of which are incorporated herein by reference.

[0108] 47 Structure 50 Temperature control system 61 Liquid supply unit 63 Gas supply unit 90 Controller W Wafer

Claims

1. A temperature control system for adjusting the temperature of an object in contact with a structure, comprising: a liquid supply unit for supplying a liquid refrigerant to the structure; a gas supply unit for supplying a gaseous refrigerant to the structure; and a control unit for controlling the liquid supply unit and the gas supply unit, wherein the control unit controls: a step of supplying the liquid refrigerant and the gaseous refrigerant and mixing them to form a mist, thereby cooling the structure by the latent heat of vaporization of the liquid refrigerant when the temperature of the object is above a first temperature threshold; a step of cooling the structure with the liquid refrigerant supplied from the liquid supply unit when the temperature of the object is below the first temperature threshold and above a second temperature threshold lower than the first temperature threshold; and a step of cooling the structure with the gaseous refrigerant supplied from the gas supply unit when the temperature of the object is below the second temperature threshold.

2. The temperature control system according to claim 1, wherein the structure has a microchannel structure inside, which includes a plurality of heat exchange chambers adjacent to a wall portion in contact with the object, and a group of refrigerant flow paths capable of discharging each of the mist-like liquid refrigerant, the liquid refrigerant, and the gaseous refrigerant into the plurality of heat exchange chambers.

3. The temperature control system according to claim 2, wherein the group of refrigerant flow paths communicates with the plurality of heat exchange chambers and has a refrigerant discharge path that can discharge refrigerant from the plurality of heat exchange chambers.

4. The temperature control system according to claim 3, further comprising the liquid supply unit and the gas supply unit, and an external refrigerant device communicating with the refrigerant discharge passage, wherein the external refrigerant device circulates the refrigerant discharged from the refrigerant discharge passage to the liquid supply unit and the gas supply unit.

5. The temperature control system according to claim 4, wherein the external refrigerant device comprises a gas-liquid separator for separating the refrigerant in the refrigerant discharge passage into the liquid refrigerant and the gaseous refrigerant.

6. The temperature control system according to any one of claims 1 to 5, wherein the liquid supply unit is a chiller that adjusts the temperature of the liquid refrigerant and pumps the liquid refrigerant.

7. The temperature control system according to any one of claims 1 to 5, wherein the gas supply unit is a cooler that adjusts the temperature of the gaseous refrigerant and pressurizes the gaseous refrigerant.

8. The temperature control system according to any one of claims 1 to 5, wherein the structure mixes the liquid refrigerant and the gaseous refrigerant internally to generate the liquid refrigerant in a mist form.

9. The temperature control system according to any one of claims 1 to 5, further comprising a mist generator that mixes the liquid refrigerant and the gaseous refrigerant outside the structure to produce a mist of the liquid refrigerant.

10. The temperature control system according to any one of claims 1 to 5, wherein the structure is installed on a stage that supports the substrate, which is the object.

11. The temperature control system according to claim 10, wherein the stage is applied to an inspection device, the inspection device comprising a tester for inspecting the substrate and a probe card installed on the tester, and the stage is positioned vertically below the probe card.

12. A temperature adjustment method for adjusting the temperature of an object in contact with a structure, comprising: a liquid supply unit for supplying a liquid refrigerant to the structure; and a gas supply unit for supplying a gaseous refrigerant to the structure, the temperature adjustment method comprising: a step of supplying the liquid refrigerant and the gaseous refrigerant and mixing them to form a mist, thereby cooling the structure by the latent heat of vaporization of the liquid refrigerant, when the temperature of the object is equal to or greater than a first temperature threshold; a step of cooling the structure with the liquid refrigerant supplied from the liquid supply unit when the temperature of the object is less than the first temperature threshold and equal to or greater than a second temperature threshold lower than the first temperature threshold; and a step of cooling the structure with the gaseous refrigerant supplied from the gas supply unit when the temperature of the object is less than the second temperature threshold.

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