Cleaning device and vacuum processing device

Abstract

This cleaning device collects an object to be removed in an introduced target gas and decomposes the object by means of plasma, the cleaning device comprising: a housing which has a cylindrical shape and in which a gas inlet port and a gas outlet port are respectively formed in one end side and the other end side along the axial direction of the housing; a collection plate that is installed in the housing, forms a flow path for guiding the target gas introduced from the gas inlet port to the gas outlet port, and collects the object to be removed that flows through the flow path; and a plasma generation unit that generates the plasma. The plasma generation unit introduces the generated plasma into the flow path via a plasma inlet port formed in a side wall of the housing, or generates the plasma in the flow path. The collection plate has a spiral shape along the axial direction, and the plasma inlet port is formed in plurality along the spiral-shaped flow path formed by the collection plate.

Description

Cleaning Device and Vacuum Processing Device

[0001] The present invention relates to a cleaning device and a vacuum processing device.

[0002] Conventionally, in a semiconductor manufacturing process using a vacuum processing device such as an etching device or a CVD device, for example, the inside of a vacuum chamber is evacuated by a vacuum pump and a process gas is supplied, and vacuum processing is performed on a substrate installed in the chamber by a plasma process or a thermal process. While the vacuum processing is being performed, many by-products such as generated gas and particulate matter generated by the vacuum processing are generated in the vacuum chamber. When the gas containing the generated particulate matter and generated gas is discharged from the vacuum chamber, the generated gas may solidify and adhere to the piping of the exhaust line, or the particulate matter may adhere to the piping and cause blockage, which may damage the vacuum pump.

[0003] Therefore, conventionally, in a vacuum processing device, in order to prevent blockage of the piping by solidified generated gas or particulate matter, a cleaning device for collecting removal objects such as generated gas and particulate matter contained in the generated gas may be installed in the exhaust line (for example, Patent Document 1). In this Patent Document 1, it is described that an exhaust cooling device for trapping removal objects is provided in the exhaust line of the vacuum chamber. Furthermore, the device of this Patent Document 1 is configured to decompose and clean the trapped removal objects by providing a plasma source upstream of the exhaust cooling device in the exhaust line so that the exhaust cooling device can be automatically cleaned without being disassembled, and introducing a cleaning gas plasmaized by the plasma source into the gas cooling device.

[0004] Japanese Patent Publication No. 2021-524162

[0005] Incidentally, the cleaning device described above requires improved collection and decomposition performance of the substances to be removed flowing through the exhaust line. To meet this requirement, the inventors first considered a cleaning device with the structure shown in Figure 6. This device is configured to have multiple collection plates for collecting the substances to be removed installed inside a cylindrical housing, and to introduce plasma from a plasma generation unit attached to the side wall of the housing into each space separated by the collection plates. A gas containing the substances to be removed (referred to as the target gas) is introduced through an opening in the top plate of the housing, and the target gas descends through each space one step at a time through openings formed in each collection plate, and is led out through an opening in the bottom wall of the housing.

[0006] However, in a configuration where the enclosure into which the target gas is introduced is divided into multiple spaces, the pressure loss experienced by the target gas flowing through the cleaning device increases. This can lead to a decrease in the exhaust conductance of the entire exhaust line, potentially negatively impacting the results of the vacuum treatment in the vacuum chamber.

[0007] This invention has been made in view of these problems, and its main objective is to provide a cleaning device that can improve the collection and decomposition performance of substances to be removed flowing through an exhaust line, and that can suppress the decrease in exhaust conductance of the exhaust line.

[0008] In other words, the cleaning apparatus of the present invention collects objects to be removed from an introduced target gas and decomposes them with plasma, and comprises a cylindrical housing with a gas inlet and a gas outlet formed at one end and the other end along its axial direction, a collection plate installed inside the housing which forms a flow path that guides the target gas introduced from the gas inlet to the gas outlet and collects the objects to be removed flowing through the flow path, and a plasma generation unit, wherein the plasma generation unit introduces the generated plasma into the flow path or generates the plasma in the flow path through a plasma inlet formed in the side wall of the housing, and the collection plate has a helical shape along the axial direction, and a plurality of plasma inlets are formed along the helical flow path formed by the collection plate.

[0009] With this configuration, the collection plate forms a spiral flow path, allowing the target gas introduced into the enclosure to be smoothly guided from the gas inlet to the gas outlet, reducing pressure loss and suppressing a decrease in the overall exhaust conductance of the exhaust line. The substances to be removed include at least solid substances such as particulate matter suspended in the target gas and gaseous substances that cool and solidify as they flow through the exhaust line. Furthermore, by forming the flow path in a spiral shape, the length of the flow path of the target gas introduced into the enclosure can be increased, extending the contact time with the collection plate, thereby improving the collection efficiency of the substances to be removed contained in the target gas. In addition, since multiple plasma inlets are installed along the spiral flow path, unevenness in plasma density within the flow path can be reduced, allowing for efficient decomposition of the collected substances to be removed.

[0010] In the cleaning apparatus, it is preferable that the multiple plasma inlets are formed at approximately equal intervals from one another along the flow path. This further reduces the unevenness of plasma density within the flow path, allowing for more efficient decomposition of the collected particulate matter.

[0011] Furthermore, in the cleaning apparatus, it is preferable that the multiple plasma inlets are formed such that they are denser upstream than downstream along the flow path. In this way, the generated plasma flows along the flow path from upstream to downstream. Therefore, by forming the plasma inlets so that they are denser upstream than downstream in the flow path, the plasma can be efficiently distributed throughout the entire flow path with a limited number of plasma generation units.

[0012] Furthermore, in the cleaning device, it is preferable that the distance between the faces of the collection plates along the axial direction is greater than or equal to the diameter of the gas inlet and the gas outlet. This further reduces the pressure loss of the target gas in the flow path and further reduces the exhaust conductance of the exhaust line.

[0013] Furthermore, it is preferable that the cleaning device further includes a cooling mechanism comprising piping installed along the surface of the collection plate and a cooling fluid supply unit that supplies cooling water to the piping. In this way, cooling the collection plate promotes the solidification of the gaseous substance to be removed, thereby further improving the collection efficiency.

[0014] Furthermore, it is preferable that the cleaning device further includes a cooling mechanism having an internal channel formed within the collection plate and having a spiral shape along the collection plate, and a cooling fluid supply unit that supplies cooling water to the internal channel. In this way, the collection plate can be cooled more efficiently than when cooling pipes are laid along the surface of the collection plate, promoting the solidification of the material to be removed and further improving the collection efficiency.

[0015] Furthermore, it is preferable that the cleaning device has a collection plate that has a mesh structure with multiple holes. By making the collection plate a mesh structure, the surface area can be increased, and the collection efficiency can be further improved. In addition, the pressure loss to the target gas introduced into the housing can be further reduced.

[0016] Furthermore, the vacuum processing apparatus of the present invention is characterized by comprising a vacuum chamber forming a processing chamber for performing vacuum processing on a substrate, a gas supply line for supplying process gas to the processing chamber, an exhaust line having a vacuum pump for evacuating the processing chamber, and the cleaning apparatus provided upstream of the vacuum pump in the exhaust line. Such a vacuum processing apparatus can achieve the same effects as the cleaning apparatus of the present invention.

[0017] According to the present invention, it is possible to provide a cleaning device that can improve the collection and decomposition performance of substances to be removed flowing through an exhaust line, and that can suppress the decrease in exhaust conductance of the exhaust line.

[0018] A schematic diagram showing the overall configuration of a vacuum apparatus according to one embodiment of the present invention. A schematic perspective view showing the configuration of the cleaning apparatus of the same embodiment. A schematic perspective view showing the internal configuration of the cleaning apparatus of the same embodiment. A schematic cross-sectional view showing the internal configuration of the cleaning apparatus of the same embodiment. A perspective view showing the configuration of the collection plate of the same embodiment. A configuration considered by the inventors in the process of conceiving the cleaning apparatus of the present invention. A schematic perspective view showing the internal configuration of the cleaning apparatus of another embodiment. A schematic cross-sectional view showing the internal configuration of the cleaning apparatus of another embodiment.

[0019] Hereinafter, a vacuum processing apparatus 200 equipped with a cleaning device 100 according to one embodiment of the present invention will be described with reference to the drawings.

[0020] The vacuum processing apparatus 200 of this embodiment is used in semiconductor manufacturing processes and applies vacuum processing to a substrate W, which is the object to be processed. Vacuum processing applied to the substrate W includes, for example, film formation by CVD, etching, ashing, sputtering, etc. This vacuum processing apparatus 200 is also called a CVD apparatus when film formation is performed by CVD, an etching apparatus when etching is performed, an ashing apparatus when ashing is performed, and a sputtering apparatus when sputtering is performed.

[0021] Specifically, as shown in Figure 1, the vacuum processing apparatus 200 comprises a metal vacuum chamber C that forms a processing chamber for performing vacuum processing on a substrate W, a gas supply line L1 that supplies a predetermined process gas to the processing chamber, an exhaust line L2 having a vacuum pump P for evacuating the processing chamber, and a cleaning device 100 provided upstream of the vacuum pump P in the exhaust line L2.

[0022] The gas supply line L1 supplies gas into the processing chamber through a gas supply port provided in the vacuum chamber C. When vacuum processing is performed on the substrate W, the gas supply line L1 supplies process gas to the processing chamber according to the processing content.

[0023] The exhaust line L2 continuously evacuates the processing chamber while the substrate W is being subjected to vacuum processing. By operating the vacuum pump P located at the end of the exhaust line L2, it not only exhausts excess process gas supplied to the processing chamber but also exhausts the generated gas produced by the vacuum processing. In addition, particulate matter, a by-product, is generated in the processing chamber while the substrate W is being subjected to vacuum processing. This particulate matter, along with the process gas and generated gas, is discharged by the exhaust line L2.

[0024] The cleaning device 100 cleans the target gas (hereinafter referred to as the target gas) flowing through the exhaust line L2. Specifically, the cleaning device 100 collects the substances to be removed from the introduced target gas and decomposes the collected substances using plasma. The substances to be removed include at least solid substances such as particulate matter suspended in the target gas and gaseous substances that cool and solidify as they flow through the exhaust line L2.

[0025] More specifically, as shown in Figures 2 to 4, the cleaning device 100 comprises a cylindrical housing 1 with a gas inlet G1 and a gas outlet G2, a collection plate 2 installed inside the housing 1, and a plurality (four in this case) of plasma generating units 3 attached to the side wall of the housing 1. The gas inlet G1 and gas outlet G2 are formed on one end and the other end of the housing 1 along the axial direction, respectively. The target gas containing the material to be removed is introduced into the housing 1 from the gas inlet G1, and after the particulate matter is removed, it is discharged from the gas outlet G2.

[0026] The housing 1 is generally cylindrical in shape and comprises a cylindrical body portion 11 and a top plate 12 and a bottom plate 13 provided at both ends in the axial direction. A gas outlet G2 is formed in the top plate 12 and a gas outlet G2 is formed in the bottom plate 13. Plasma inlet H is provided at the mounting position of each plasma generation unit 3 on the side wall of the housing 1 (specifically the body portion 11). This plasma inlet H is a through hole that penetrates the side wall of the housing 1.

[0027] The collection plate 2 forms a flow path A that guides the target gas introduced from the gas inlet G1 to the gas outlet G2, and collects the substances to be removed that flow through the flow path A. The flow path A is a space formed by the plate surface of the collection plate 2 and the inner wall surface of the housing 1. The substances to be collected adhere to the surface of the collection plate 2 and are collected. Here, "substances to be collected" means that solid substances in the target gas adhere to the collection plate 2 and are collected, that gaseous substances in the target gas solidify and adhere to the collection plate 2 upon contact with the collection plate 2 and are collected, and that gaseous substances in the target gas cool and solidify as they flow through the flow path A and adhere to the collection plate 2 and are collected.

[0028] The plasma generation unit 3 hermetically seals the plasma inlet H of the housing 1 and introduces the generated plasma into the flow channel A through the plasma inlet H, or generates plasma. The plasma generation unit 3 in this embodiment generates plasma in the flow channel A by transmitting microwaves through a dielectric, thereby generating so-called surface wave plasma (SCP). Specifically, this plasma generation unit 3 includes a microwave power supply 31 that generates microwaves and an antenna 32 that receives the generated microwaves and transmits them to the flow channel A.

[0029] The microwave power supply 31 generates microwaves with a frequency of 2.4 GHz to 2.5 GHz (2.45 GHz in this case) and transmits them toward the antenna 32. Here, a solid-state microwave power supply is used.

[0030] The antenna 32 is generally columnar in shape, and its axial direction is aligned with the radial direction of the housing 1. Specifically, one end is positioned to face the plasma inlet H. The antenna 32 comprises a metal columnar member 321 that receives microwaves and a dielectric member 322 attached to the end on the plasma inlet H side. The dielectric member 322 transmits the microwaves received by the columnar member 321 into the flow path A. As a result, the gas near the surface of the dielectric member 322 in the flow path A is converted into plasma, and plasma is generated in the flow path A via the plasma inlet H.

[0031] However, in the cleaning device 100 of this embodiment, the collection plate 2 has a helical shape along the axial direction of the housing 1, and a helical flow path A is formed by the plate surface of the collection plate 2.

[0032] Specifically, inside the housing 1 of this embodiment, a support column 14 with a circular cross-section is provided, fixed so as to pass straight through its central axis. The collection plate 2 is formed to descend from the top plate 12 to the bottom plate 13 of the housing 1 while rotating around this support column. When viewed from the axial direction of the housing 1, the collection plate 2 is positioned so that its inner circumferential surface contacts the support column 14, and its outer circumferential surface contacts the inner circumferential surface of the body portion 11 of the housing 1. Furthermore, the collection plate 2 is formed to descend while rotating at a substantially constant pitch along the axial direction. That is, the collection plate 2 is formed so that the distance between the surfaces of the collection plate 2 in the axial direction is always constant.

[0033] The collection plate 2, having this shape, also forms a flow path A that rotates around the support column and descends from the top plate 12 to the bottom plate 13 of the housing 1. In the region where the flow path shape and size are constant along the direction of rotation, the flow path area of ​​this flow path A is formed to be larger than the respective opening areas of the gas inlet G1 and gas outlet G2. In this embodiment, the distance between the faces of the collection plate 2 is made to be greater than or equal to the respective diameters of the gas inlet G1 and gas outlet G2, thereby making the flow path area of ​​the flow path A larger than the respective opening areas of the gas inlet G1 and gas outlet G2.

[0034] In this embodiment, as shown in Figure 5, the entire surface of the collection plate 2 has a mesh structure with multiple holes that penetrate in the thickness direction, and the uneven structure formed by these multiple holes efficiently collects the material to be removed.

[0035] Furthermore, the cleaning device 100 of this embodiment is equipped with a cooling mechanism 4 for cooling the collection plate 2. As shown in Figure 5, this cooling mechanism 4 includes a cooling pipe 41 installed along the surface of the collection plate 2 and a fluid supply unit (not shown) that supplies cooling fluid (cooling water) to the cooling pipe 41. In this embodiment, the cooling pipe 41 is provided in contact with the upper surface of the surface of the collection plate 2, and more specifically, it is provided to rotate spirally together with the collection plate 2 around the support column 14. The cooling pipe 41 of this embodiment is formed to extend downward while spiraling from the upper end to the lower end of the collection plate 2, fold back at the lower end, and then rise while spiraling from the lower end to the upper end of the collection plate 2.

[0036] In this embodiment, the multiple plasma generation units 3 described above are formed along a helical flow path A on the side wall of the housing 1, and the multiple plasma inlet ports H are also provided along the helical flow path A in accordance with the arrangement of the plasma generation units 3.

[0037] In this embodiment, the multiple plasma generation units 3 and plasma inlet H are arranged at approximately equal intervals from one another to reduce unevenness in plasma density in the flow direction within the flow path A. Furthermore, the multiple plasma generation units 3 and plasma inlet H are arranged in the flow path A such that the number is higher on the upstream side (top plate 12 side) compared to the downstream side (bottom plate 13 side). Specifically, in the axial direction of the housing 1, the number of plasma generation units 3 on the top plate 12 side is greater than the number of plasma generation units 3 on the bottom plate 13 side is greater than the number of plasma generation units 3 on the bottom plate 13 side.

[0038] Next, the cleaning operation of the cleaning device 100 configured in this way will be described. The collection operation of the object to be removed by the cleaning device 100 is performed at all times while the vacuum pump P is operating and the vacuum chamber C is being evacuated, regardless of whether or not vacuum treatment is being performed on the substrate W in the vacuum chamber C.

[0039] The cleaning device 100 then performs the decomposition operation of the collected objects to be removed while introducing, for example, a cleaning gas into the vacuum chamber C through the gas supply line L1. During this decomposition operation, the vacuum pump P is operated to evacuate the inside of the vacuum chamber C, and for example, NF is introduced into the vacuum chamber C through the gas supply line L1. ３ A cleaning gas such as nitrogen trifluoride is supplied. During this time, each plasma generation unit 3 is operated to introduce microwaves into the flow path A, causing the cleaning gas to be converted into plasma, and the generated plasma to flow along the flow path A. The plasma flowing through the flow path A then decomposes the collected object to be removed.

[0040] With the cleaning device 100 of this embodiment configured in this way, the collection plate 2 forms a helical flow path A, so that the target gas introduced into the housing 1 can be smoothly guided from the gas inlet G1 to the gas outlet G2, reducing pressure loss and suppressing a decrease in the exhaust conductance of the entire exhaust line L2. Furthermore, by forming the flow path A in a helical shape, the length of the flow path of the target gas introduced into the housing 1 can be increased, extending the contact time with the collection plate 2, thereby improving the collection efficiency of the target material to be removed. Moreover, since multiple plasma generation units 3 are installed along the helical flow path A, unevenness in plasma density within the flow path A can be reduced, and the collected target material to be removed can be efficiently decomposed.

[0041] In addition, since the plurality of plasma generation units 3 are arranged at substantially equal intervals along the flow path A and are arranged so as to be denser on the upstream side than on the downstream side along the flow path A, a limited number of plasma generation units 3 can efficiently spread plasma throughout the entire flow path A, further reduce unevenness in plasma density within the flow path A, and more efficiently decompose the collected objects to be removed.

[0042] Furthermore, since the distance between the surfaces of the collection plates 2 along the axial direction is made to be equal to or greater than the diameter dimensions of the gas inlet G1 and the gas outlet G2, the pressure loss of the target gas in the flow path A can be further reduced, and the exhaust conductance of the exhaust line L2 can be further reduced.

[0043] In addition, a cooling mechanism 4 for cooling the collection plate 2 is provided, and the collection plate 2 has a mesh structure. Therefore, solidification of the objects to be removed, which are gaseous substances, is promoted to improve the collection efficiency, and the pressure loss of the introduced target gas can be further reduced.

[0044] Note that the present invention is not limited to the above embodiment. For example, in the cleaning device 100 of another embodiment, the collection plate 2 does not have to have a mesh structure as long as it has a structure capable of collecting the objects to be removed.

[0045] In addition, the pitch of the collection plate 2 along the axial direction in another embodiment does not have to be constant. Also, the collection plate 2 in another embodiment may be helical staircase-shaped, or may form uneven portions such as bumps in the middle of the flow path A. The collection plate 2 may have any shape as long as the gas flow path A from the gas inlet G1 to the gas outlet G2 partially overlaps when viewed from the axial direction.

[0046] In addition, in the cleaning device 100 of another embodiment, the cooling mechanism 4 for cooling the collection plate 2 does not have to be provided.

[0047] Also, in the cleaning device 100 of the above embodiment, a surface wave plasma generator was used as the plasma generation unit 3, but it is not limited to this. In the cleaning device 100 of other embodiments, as the plasma generation unit 3, for example, other types of plasma generators such as inductively coupled plasma may be used.

[0048] Also, in the above embodiment, the gas inlet G1 and the gas outlet G2 were formed to open in the top plate 12 and the bottom plate 13 of the housing 1, respectively, but it is not limited to this. In other embodiments, the gas inlet G1 and the gas outlet G2 may be formed to open on the inner wall surface of the body portion 11 of the housing 1.

[0049] Also, in other embodiments, the flow path area of the flow path A may be smaller than the opening areas of the gas inlet G1 and the gas outlet G2, respectively.

[0050] Also, in the above embodiment, the plasma generation unit 3 was of a type that was attached to the side wall of the housing 1 and transmitted microwaves into the flow path A through the plasma inlet H to generate plasma in the flow path A, but it is not limited to this. In other embodiments, the plasma generation unit 3 may be of a remote plasma generation type that is not attached to the side wall of the housing 1. In this case, a pipe may be provided to connect between the plasma generation unit 3 and the plasma inlet H of the housing 1, and plasma may be introduced through the pipe. That is, other types of plasma generation units 3 may introduce the generated plasma into the flow path A through the plasma inlet H.

[0051] Also, the cleaning device 100 of other embodiments may include a weir portion D in the housing 1 to prevent the target gas introduced from the gas inlet G1 into the flow path A from flowing upstream. Specifically, as shown in FIG. 7, this weir portion D is constituted by a plate-like member provided upright on the upstream side of the gas inlet G1 in the flow path A. The weir portion D at least partially blocks the flow path A and dams up the target gas flowing upstream.

[0052] Furthermore, in the cleaning device 100 of the above embodiment, the cooling mechanism 4 was configured using cooling pipes 41 installed along the surface of the collection plate 2, but it is not limited to this. In the cleaning device 100 of other embodiments, as shown in Figure 8, the cooling mechanism 4 includes a first internal passage 42 formed in the support column 14 and a second internal passage 43 formed in the collection plate 2, and cooling fluid supplied from a fluid supply unit (not shown) may flow through the first internal passage 42 and the second internal passage 43.

[0053] The first internal flow path 42 is composed of a hollow section formed within the support column 14 along the axial direction. The first internal flow path 42 is formed from the upper end to the lower end of the support column 14 along the axial direction.

[0054] Furthermore, a refrigerant inlet L1 is provided at the upper end of the support column 14 for introducing cooling fluid supplied from outside the housing 1 into the first internal passage 42. This refrigerant inlet L1 is made up of a through hole that penetrates the upper wall of the support column 14. Also, a communication opening L2 is provided at the lower end of the support column 14 to connect the first internal passage 42 and the second internal passage 43. This communication opening L2 is made up of a through hole that penetrates the side wall at the lower part of the support column 14.

[0055] The second internal channel 43 is formed in a helical shape along the axial direction, together with the collection plate 2. Specifically, in this embodiment, the collection plate 2 is constructed by overlapping two helical-shaped plate plates 21 and 22 with a slight offset in the axial direction and welding them together. The gap between the two plate plates 21 and 22 forms the second internal channel 43. This second internal channel 43 is formed along the axial direction from the lower end to the upper end of the collection plate 2. The surfaces of the two plate plates may be subjected to a surface treatment that creates irregularities, such as blasting.

[0056] Furthermore, the second internal passage 42 communicates with the communication port L2 at its lower end along the axial direction. The upper end of the collection plate 2 is also provided with a refrigerant outlet L2 for guiding the cooling fluid that has passed through the second internal passage 42 to the outside of the housing 1. This refrigerant outlet L2 is made up of a through hole that penetrates one of the plate plates constituting the collection plate 2.

[0057] In this way, in the cleaning device 100 shown in Figure 8, the cooling fluid introduced from the refrigerant inlet L1 flows from top to bottom along the axial direction in the first internal passage 42, then passes through the communication port L2 and is introduced into the lower part of the second internal passage 43, where it flows upward while rotating around the support column 14 and is discharged from the refrigerant outlet L3. The direction of the cooling fluid flow may be reversed, and the positions of the refrigerant inlet L1 and refrigerant outlet L2 can be changed arbitrarily. Furthermore, it is not necessary to have both the first internal passage 42 and the second internal passage 43; the device may have only the first internal passage 42 or only the second internal passage 43.

[0058] The present invention can be modified in various ways, as long as it does not contradict its spirit.

[0059] According to the present invention, it is possible to provide a cleaning device that can improve the collection and decomposition performance of substances to be removed flowing through the exhaust line, and that can suppress the decrease in exhaust conductance of the exhaust line.

[0060] 100...Cleaning device 1...Housing 2...Collection plate 3...Plasma generation unit G1...Gas inlet G2...Gas outlet A...Flow path

Claims

1. A cleaning device for collecting and decomposing target substances in an introduced target gas using plasma, comprising: a cylindrical housing having a gas inlet and a gas outlet formed at one end and the other end along its axial direction; a collection plate installed inside the housing, forming a flow path that guides the target gas introduced from the gas inlet to the gas outlet and collecting the target substances flowing through the flow path; and a plasma generation unit that generates the plasma, wherein the plasma generation unit introduces the generated plasma into the flow path or generates the plasma in the flow path through a plasma inlet formed in the side wall of the housing, the collection plate has a helical shape along the axial direction, and a plurality of plasma inlets are formed along the helical flow path formed by the collection plate.

2. The cleaning apparatus according to claim 1, wherein a plurality of the plasma inlets are formed at substantially equal intervals from one another along the flow path.

3. The cleaning apparatus according to claim 1 or 2, wherein the plurality of plasma inlets are formed such that they are denser upstream than downstream along the flow path.

4. The cleaning apparatus according to any one of claims 1 to 3, wherein the distance between the surfaces of the collection plate along the axial direction is greater than or equal to the diameter of the gas inlet and the gas outlet.

5. The cleaning apparatus according to any one of claims 1 to 4, further comprising a cooling mechanism having a pipe installed along the surface of the collection plate and a cooling fluid supply unit for supplying cooling water to the pipe.

6. The cleaning apparatus according to any one of claims 1 to 4, further comprising a cooling mechanism having an internal channel formed in the collection plate and having a helical shape along the collection plate, and a cooling fluid supply unit that supplies cooling water to the internal channel.

7. The cleaning apparatus according to any one of claims 1 to 5, wherein the collection plate has a mesh structure in which a plurality of holes are formed.

8. A vacuum processing apparatus comprising: a vacuum chamber forming a processing chamber for performing vacuum processing on a substrate; a gas supply line for supplying process gas to the processing chamber; an exhaust line having a vacuum pump for evacuating the processing chamber; and a cleaning device according to any one of claims 1 to 7, provided upstream of the vacuum pump in the exhaust line.

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