Chemical vapor deposition apparatus

Abstract

The present invention relates to a chemical vapor deposition apparatus and, more specifically, to a chemical vapor deposition apparatus wherein, when a gas is supplied toward a substrate, the area to which the gas is supplied is delimited, and the flow rate, flow velocity, or concentration of the supplied gas is individually controlled in each area, thereby increasing the rate of growth of a thin film on the substrate, and increasing the thickness uniformity and doping uniformity of the thin film.

Description

Chemical Vapor Deposition System

[0001] The present invention relates to a chemical vapor deposition apparatus, and more specifically, to a chemical vapor deposition apparatus capable of increasing the growth rate of a thin film on a substrate and improving the thickness uniformity and doping uniformity of the thin film by partitioning the gas supply area when supplying gas toward a substrate and individually controlling the flow rate, flow velocity, or concentration of the gas supplied in each area.

[0002] Generally, in the case of a chemical vapor deposition apparatus, a substrate is placed on a susceptor, and a thin film can be grown on the substrate by supplying process gas, etc., from the side of the substrate.

[0003] In the case of a device according to the prior art, when process gas or the like is supplied toward a substrate, even when the substrate rotates, the growth rate of the thin film is fast in the upstream side of the substrate, that is, the upstream side where the process gas is supplied, and the growth rate of the thin film is relatively slow in the downstream side of the substrate.

[0004] In the case of devices according to the prior art, it was difficult to resolve the aforementioned problems even by controlling the gas flow rate or velocity, and consequently, the thickness uniformity and doping uniformity of the thin film were significantly reduced.

[0005] The present invention aims to provide a chemical vapor deposition apparatus capable of increasing the growth rate of a thin film on a substrate and improving the thickness uniformity of the thin film by dividing the gas supply area when supplying gas toward a substrate and individually controlling the flow rate, flow velocity, or concentration of the gas supplied in each area in order to solve the above-mentioned problems.

[0006] The objective of the present invention as described above can be achieved by a chemical vapor deposition apparatus characterized by comprising: a chamber; a susceptor provided inside the chamber on which at least one substrate is placed; an upper cover provided inside the chamber on which a processing space is provided between the susceptor and the upper cover for processing the substrate; and a guide plate assembly having a plurality of guide plates that supplies process gas toward the substrate placed in the processing space.

[0007] Here, the plurality of guide plates can be stacked and arranged in a vertical direction, and the process gas can be supplied toward the substrate through the plurality of supply spaces between the plurality of guide plates.

[0008] In addition, at least some of the plurality of guide plates may be positioned at an angle toward the substrate.

[0009] Furthermore, among the plurality of guide plates, the uppermost plate positioned at the top may have the largest inclination angle, and the inclination angle of the guide plates may decrease as they go downwards.

[0010] In addition, the lowest plate among the plurality of guide plates can be positioned horizontally with respect to the substrate.

[0011] Meanwhile, the guide plate assembly may be connected to a gas box to which the process gas is supplied, and a plurality of gas spaces connected to the supply space may be provided vertically on the inside of the gas box, and a vertical partition may be provided in at least a part of the gas space.

[0012] In addition, the position or number of the vertical partitions provided in each of the plurality of gas spaces may differ from one another.

[0013] Meanwhile, among the plurality of gas spaces, the main gas space that supplies a precursor toward the substrate may be divided by the vertical partition into a central gas space and side gas spaces disposed on both sides of the central gas space.

[0014] In this case, the width of the central gas space may be the same as the diameter of the substrate.

[0015] Meanwhile, the plurality of guide plates may include four guide plates stacked vertically, and the process gas may be supplied toward the substrate through three supply spaces between the guide plates.

[0016] In this case, the guide plate assembly may be connected to a gas box to which the process gas is supplied, and three gas spaces connected to the three supply spaces may be provided vertically inside the gas box, and two vertical partitions may be provided in each of the three gas spaces so that the gas spaces may be divided into a total of nine spaces.

[0017] In addition, at least some of the plurality of guide plates may be positioned at an angle toward the substrate.

[0018] Meanwhile, the objective of the present invention as described above can be achieved by a chemical vapor deposition apparatus characterized by comprising: an outer chamber; an inner chamber provided inside the outer chamber; a susceptor provided inside the inner chamber on which at least one substrate is placed; an upper cover provided inside the inner chamber and which provides a processing space between the susceptor and the inner chamber for processing the substrate; and a guide plate assembly having a plurality of guide plates that supplies process gas toward the substrate placed in the processing space.

[0019] Here, the plurality of guide plates can be stacked and arranged in a vertical direction, and the process gas can be supplied toward the substrate through the plurality of supply spaces between the plurality of guide plates.

[0020] In addition, the guide plate assembly is connected to a gas box to which the process gas is supplied, and a plurality of gas spaces connected to the supply space may each be provided inside the gas box, and a vertical partition may be provided in at least a part of the gas space.

[0021] Furthermore, at least some of the plurality of guide plates may be arranged at an angle toward the substrate.

[0022] According to the present invention having the above-described configuration, when supplying gas toward a substrate, the region where the gas is supplied is partitioned, and the flow rate, flow velocity, or concentration of the gas supplied in each region is individually controlled, thereby increasing the growth rate of the thin film on the substrate and increasing the thickness uniformity and doping uniformity of the thin film.

[0023] FIG. 1 is a side cross-sectional view illustrating the internal configuration of a chemical vapor deposition apparatus according to one embodiment of the present invention,

[0024] FIG. 2 is a side cross-sectional view of a gas box,

[0025] FIG. 3 is a plan view of a gas box,

[0026] FIG. 4 is a front view of a gas box according to one embodiment, viewed from the front.

[0027] FIG. 5 is a top view of a substrate mounted on a susceptor,

[0028] Figure 6 is a graph illustrating the effect according to the flow rate of the gas supplied in each supply space,

[0029] FIGS. 7 to 10 are front views illustrating a gas box according to another embodiment.

[0030] Hereinafter, the structure of a chemical vapor deposition apparatus according to an embodiment of the present invention will be examined in detail with reference to the drawings.

[0031] FIG. 1 is a side cross-sectional view illustrating the internal configuration of a chemical vapor deposition apparatus (1000) according to one embodiment of the present invention.

[0032] Referring to FIG. 1, the chemical vapor deposition apparatus (1000) may comprise an inner chamber (300) (hereinafter referred to as 'chamber'), a susceptor (320) provided inside the chamber (300) on which at least one substrate (S) is placed, an upper cover (310) provided inside the chamber (300) on which a processing space (312) is provided between the susceptor (320) and the upper cover (310) for processing the substrate (S), and a guide plate assembly (220) having a plurality of guide plates (232, 234, 236, 238) that supply process gas toward the substrate (S) placed in the processing space (312).

[0033] First, the chemical vapor deposition apparatus (1000) may be equipped with an outer chamber (100). Various components may be provided in the outer chamber (100).

[0034] A receiving space (110) may be provided on the inner side of the outer chamber (100), and the chamber (300) described above may be provided in the receiving space (110).

[0035] A gas supply unit (200) may be connected to one side of the above-mentioned external chamber (100).

[0036] The above gas supply unit (200) can supply various process gases, including precursor gas and dopant gas, and / or carrier gas, toward the processing space (312) of the above-described chamber (300).

[0037] For example, a chemical vapor deposition apparatus (1000) according to one embodiment of the present invention may be configured as an apparatus for epitaxial growth of silicon carbide (SiC) to manufacture a power semiconductor. In this case, the precursor gas may be a Si-based gas such as dichlorosilane (SiH2Cl2), monosilane (SiH4), trichlorosilane (SiHCl3), or silicon tetrachloride (SiCl4), and propane (C3H8), methane (CH4), ethylene (C2H4), or acetylene (C2H2). Also, nitrogen (N2) or ammonia (NH3) may be used as the dopant gas, and hydrogen (H2) may be used as the carrier gas.

[0038] Meanwhile, the gas supply unit (200) may be equipped with a plurality of supply ports (212, 213, 214) connected to an external gas supply source (not shown) and a guide plate assembly (220) that supplies gas supplied through the supply ports (212, 213, 214) to the chamber (300).

[0039] The above supply ports (212, 213, 214) can be connected to the guide plate assembly (220) through the gas box (210).

[0040] The guide plate assembly (220) may be provided with a plurality of guide plates (232, 234, 236, 238). The plurality of guide plates (232, 234, 236, 238) may be stacked and arranged along a direction perpendicular to the substrate (S). Accordingly, the space between the plurality of guide plates (232, 234, 236, 238) arranged in a perpendicular direction forms a plurality of supply spaces (240, 250, 260), and process gas and / or carrier gas, etc., can be supplied to the substrate (S) through the plurality of supply spaces (240, 250, 260).

[0041] FIG. 2 is a side cross-sectional view of the gas box (210) as seen from the side. In FIG. 2, the guide plate assembly (220) is omitted.

[0042] Referring to FIGS. 1 and 2, a plurality of gas spaces (241, 251, 261) connected to the supply spaces (240, 250, 260) may each be provided in a vertical direction inside the gas box (210).

[0043] The process gas or carrier gas supplied through the supply ports (212, 213, 214) can be supplied to each of the multiple gas spaces (241, 251, 261) provided inside the gas box (210) and can be supplied through the multiple guide plates (222A, 222B, 222C, 222D).

[0044] In this case, the gas supplied through the first supply port (213) can be supplied to the first gas space (241) located at the top. Additionally, the gas supplied through the second supply port (212) can be supplied to the second gas space (251) located in the center in the vertical direction. Furthermore, the gas supplied through the third supply port (214) can be supplied to the third gas space (261) located at the bottom.

[0045] Additionally, the front portion of the gas box (210) (or the surface facing the guide plate assembly (220)) may be provided with a gas plate (201) that seals each of the gas spaces (241, 251, 261) and has a supply hole (270) formed therein that communicates with each of the gas spaces (241, 251, 261).

[0046] A plurality of supply holes (270) are formed in the gas plate (201), and the supply holes (270) can be connected to each of the gas spaces (241, 251, 261). Accordingly, gas from each of the gas spaces (241, 251, 261) can be supplied to the supply spaces (240, 250, 260) through the supply holes (270).

[0047] Meanwhile, the chamber (300) may be provided inside the outer chamber (100), and a processing space (312) for the substrate (S) may be provided inside the chamber (300). By adopting a so-called double chamber structure in this way, the possibility of particle contamination on the substrate (S) can be reduced, and the process on the substrate (S) can be carried out more smoothly.

[0048] Specifically, the chamber (300) may be provided with a susceptor (320) on which the substrate (S) is placed or a satellite (324) on which the substrate (S) is placed, and an upper cover (310) provided on the upper part of the susceptor (320) on which the substrate (S) is processed between the susceptor (320) and the chamber (300).

[0049] Additionally, a lower heater (340) provided at the bottom of the susceptor (320) to heat the substrate (S) may be provided. Furthermore, an upper heater (330) provided at the top of the upper cover (310) to heat the substrate (S) may be provided.

[0050] For example, the chemical vapor deposition apparatus (1000) according to the present invention may correspond to an apparatus for depositing a silicon carbide (SiC) film on the surface of the substrate (S). By supplying process gas, etc. from the side of the processing space (312) by the guide plate assembly (220), a laminar flow of gas can be induced inside the processing space (312) to grow a single crystal of silicon carbide (SiC) on the upper surface of the substrate (S). However, the apparatus for depositing the silicon carbide (SiC) film in the present invention is merely an example and is not limited thereto. For example, the concept of the present invention may be applied to an apparatus that supplies process gas in a laminar form toward the substrate (S).

[0051] Meanwhile, a gas inlet pipe (350) connected to the guide plate assembly (220) may be provided on one side of the chamber (300). Accordingly, process gas, etc., can be supplied to the processing space (312) through the gas inlet pipe (350). Of course, a structure in which the guide plate assembly (220) is directly connected to the chamber (300) without providing the gas inlet pipe (350) is also possible.

[0052] Meanwhile, for example, when a silicon carbide (SiC) film is deposited on the upper surface of the substrate (S), the process temperature may correspond to a high temperature of approximately 1600 degrees or higher. Accordingly, the upper cover (310) and the susceptor (320) that partition the processing space (312) may be made of graphite, silicon carbide coated graphite (SiC Coated Graphite), TaC coated graphite (Tac Coated Graphite), or silicon carbide material produced by CVD sintering. By being made of such materials, thermal stability and thermal conductivity are increased, allowing the substrate to be heated efficiently and power consumption to be reduced.

[0053] Additionally, a satellite (324) on which the substrate (S) is mounted can be mounted on the susceptor (320).

[0054] For example, a cover (326), etc., may be provided on the upper surface of the susceptor (320), and the satellite (324) may be inserted and placed in the recess (322) of the cover (326).

[0055] Meanwhile, the satellite (324) may be rotatably provided on the susceptor (320). That is, the satellite (324) may be rotated by providing a nozzle (not shown) on the susceptor (320) to supply floating gas, etc. toward the lower surface of the satellite (324). During the process on the substrate (S), the substrate (S) may be rotated by the rotation of the satellite (324) so ​​that the process gas, etc. supplied from the side may react uniformly on the entire surface of the substrate (S).

[0056] Meanwhile, an exhaust pipe (360) through which the gas of the processing space (312) is exhausted may be connected to the other side of the chamber (300). The gas of the processing space (312) can be exhausted to the outside of the outer chamber (100) through the exhaust pipe (360).

[0057] Additionally, the chamber (300) may be equipped with a lower heater (340) for heating the substrate (S) and the processing space (312) to a process temperature. The lower heater (340) may be provided at the bottom of the susceptor (320).

[0058] Additionally, the upper heater (330) may be provided on the upper part of the upper cover (310). The upper heater (330) may be provided between the upper part of the upper cover (310) and the lid of the chamber (300).

[0059] In this case, the aforementioned lower heater (340) may be configured as, for example, an induction heater, and the upper heater (330) may be configured as a resistance heater.

[0060] In the above configuration, the temperature of the substrate (S) and the processing space (312) is heated to a temperature similar to the process temperature by the lower heater (340) composed of an induction heater, and then the temperature of the substrate (S) and the processing space (312) can be precisely adjusted to correspond to the process temperature by the upper heater (330) composed of a resistance heater.

[0061] The shape of the lower heater (340) may be a so-called 'pancake type' circular or rectangular shape. Since the induction heating coil can be used semi-permanently after installation, it has advantages in terms of maintenance and equipment operation costs.

[0062] Meanwhile, as described above, when the lower heater (340) is configured as an induction heater and the upper heater (330) is configured as a resistance heater, noise may be generated by magnetic field interference caused by the AC power supplied to the lower heater (340) and the DC power supplied to the upper heater (330). To eliminate such noise, a noise filter (not shown) may be connected to the upper heater (330).

[0063] Meanwhile, FIG. 3 is a plan view of the gas box (210), and FIG. 4 is a front view of the gas box (210) according to one embodiment. In FIG. 4, the gas plate (201) is not shown, and only the supply hole (270) is shown with a silver line.

[0064] Referring to FIGS. 1 to 4, the guide plate assembly (220) according to the present embodiment may have a plurality of guide plates (232, 234, 236, 238). In this case, the plurality of guide plates (232, 234, 236, 238) may be arranged between a pair of side walls (280, 282) (see FIG. 5).

[0065] The number of the guide plates (232, 234, 236, 238) is not specifically limited. For example, as shown in the drawing, there may be four, or there may be fewer or more than four. Below, we will examine the case where the guide plates (232, 234, 236, 238) are composed of four.

[0066] The plurality of guide plates (232, 234, 236, 238) may be stacked and arranged along a direction perpendicular to the substrate (S). The guide plates (232, 234, 236, 238) may include a top plate (232) located at the top and a bottom plate (238) located at the bottom. Additionally, a first intermediate plate (234) and a second intermediate plate (236) may be provided between the top plate (232) and the bottom plate (238). The first intermediate plate (234) may be located on top of the second intermediate plate (236).

[0067] In this case, at least some of the plurality of guide plates (232, 234, 236, 238) may be positioned inclined toward the substrate (S).

[0068] For example, among the plurality of guide plates (232, 234, 236, 238), the uppermost plate (232) may have the largest inclination angle, and the guide plates (234, 236, 238) may be arranged so that the inclination angle becomes smaller as they go downward.

[0069] Additionally, the bottom plate (238) can be positioned horizontally with respect to the substrate (S) without being inclined.

[0070] For example, the inclination angle of the bottom plate (238) may be 0 degrees, and the inclination angle of the second intermediate plate (236) may be 0.5 to 1.5 degrees, preferably 1 to 1.3 degrees. In addition, the inclination angle of the first intermediate plate (234) may be 1.8 to 3 degrees, preferably 2.3 to 2.6 degrees. Furthermore, the inclination angle of the top plate (232) may be set to 3.3 to 5 degrees, preferably 3.5 to 4 degrees, but is not limited thereto.

[0071] When the guide plates (232, 234, 236, 238) are arranged at an angle, the process gas supplied between the plurality of guide plates (232, 234, 236, 238) forms a laminar flow and is supplied toward the substrate (S), thereby contributing to the growth of a thin film in different regions or locations of the substrate (S). By preventing pre-mixing of the gas through this structure, parasitic reactions can be prevented before reaching the substrate (S).

[0072] Meanwhile, the space between the guide plates (232, 234, 236, 238) arranged along the vertical direction can form the supply space (240, 250, 260).

[0073] For example, the supply space (240, 250, 260) may be composed of a first supply space (240) between the uppermost plate (232) and the first intermediate plate (234), a second supply space (250) between the first intermediate plate (234) and the second intermediate plate (236), and a third supply space (260) between the second intermediate plate (236) and the lowest plate (238).

[0074] The number of the supply spaces (240, 250, 260) may, of course, change depending on the number of the guide plates (232, 234, 236, 238). Additionally, each of the supply spaces (240, 250, 260) may be connected to the supply hole (270) through which process gas and / or carrier gas is supplied, which is connected to the gas space (241, 251, 261) of the gas box (210). The supply hole (270) may be composed of multiple holes.

[0075] In addition, the concentration, flow rate, flow rate, etc. of the process gas and / or carrier gas supplied through the supply hole (270) in each of the above gas spaces (241, 251, 261) can be independently controlled.

[0076] That is, the gas spaces (241, 251, 261) of the gas box (210) can each be connected to individual supply ports (212, 213, 214) as described above. Accordingly, the concentration, flow rate, and flow rate of the gas supplied by the supply ports (212, 213, 214) can be individually controlled.

[0077] In addition, as described above, when the gas box (210) is provided with a plurality of gas spaces (241, 251, 261), the type of gas supplied to each gas space (241, 251, 261) may be different.

[0078] For example, a carrier gas, etc., may be supplied through the first gas space (241) located at the top of the gas box (210) and the third gas space (261) located at the bottom. Alternatively, a dopant gas may be supplied according to the process for the substrate (S). The carrier gas may be composed of hydrogen (H2), but is not limited thereto. In addition, the carrier gas supplied through the first gas space (241) and the third gas space (261) may be different from each other.

[0079] In addition, precursor gas can be supplied along with carrier gas through the second gas space (251) or main gas space (hereinafter referred to as the 'second gas space') located in the central part along the vertical direction.

[0080] The carrier gas supplied through the first gas space (241) located at the top of the gas box (210) can generate a so-called 'pressing effect' that presses the precursor gas supplied from the second gas space (251) located at the bottom toward the substrate (S). By doing so, the precursor gas supplied from the second gas space (251) can be concentrated toward the substrate (S).

[0081] In addition, the carrier gas supplied through the third gas space (261) located at the very bottom of the gas box (210) serves to push the precursor gas supplied from the second gas space (251) toward the substrate (S), thereby allowing the precursor gas to be supplied more evenly over a longer distance.

[0082] Furthermore, as described above, by separating the space where the dopant gas and the precursor gas are supplied, the gas phase reaction can be minimized before reaching the substrate (S), thereby increasing the growth rate of the thin film on the substrate (S) and reducing surface defects of the substrate.

[0083] Additionally, as shown in FIGS. 3 and 4, at least some of the plurality of gas spaces (241, 251, 261) may be provided with vertical partitions (290, 292).

[0084] In the present embodiment, the vertical partition (290, 292) may be provided in the second gas space (251) located in the center along the vertical direction of the gas box (210). One or more of the vertical partitions (290, 292) may be provided, and the number is not specifically limited.

[0085] In the case of this embodiment, the vertical partitions (290, 292) may be composed of two. For example, the vertical partitions (290, 292) may be composed of a second-1 vertical partition (290) and a second-2 vertical partition (292).

[0086] In this case, the second gas space (251) may be divided into three spaces (252, 254, 256). For example, the second gas space (251) may be divided into a second central gas space (254) and a pair of second side gas spaces (252, 256) positioned on both sides of the second central gas space (254).

[0087] Additionally, the aforementioned second supply port (212) may be composed of a second-1 supply port (212A) connected to the second central gas space (254) and second-2 supply ports (212B, 212C) each connected to the pair of second side gas spaces (252, 256).

[0088] Accordingly, the gas space (241, 251, 261) through which gas is supplied via the gas box (210) can be divided into a total of five spaces as shown in FIG. 4. The concentration, flow rate, and flow rate of the gas supplied in the five gas spaces (241, 252, 254, 256, 261) can each be individually controlled.

[0089] Additionally, the gas supplied through the second central gas space (254) and the pair of second side gas spaces (252, 256) may be the same or different from each other. The second supply space (250) connected to the second gas space (251) corresponds to a narrow space with a height of approximately less than 10 mm, so when gas is supplied through the second supply space (250), it forms a laminar flow quickly and has straightness, so that each gas can reach the substrate (S) without mixing without a separate guide plate.

[0090] Meanwhile, when the vertical partition (290, 292) is provided, the widths (W2, W3) of the pair of second side gas spaces (252, 256) may be equal to each other. By doing so, the width of the gas supplied to both sides of the substrate (S) can be made equal, thereby increasing the uniformity of the thin film grown on the substrate (S).

[0091] Additionally, the width (W1) of the second central gas space (254) may be 2 to 4 times the width (W2, W3) of the second side gas space (252, 256). Furthermore, the width (W1) of the second central gas space (254) may be approximately equal to the diameter of the substrate (S). Thus, the precursor gas supplied from the second central gas space (254) can be directed toward the substrate (S).

[0092] FIG. 5 is a top view of the substrate (S) mounted on the susceptor (320). In FIG. 5, only the second supply space (250) in the guide plate assembly (220) is shown.

[0093] Referring to FIGS. 4 and 5, the regions where the gas supplied from the first gas space (241), the second central gas space (254), the pair of second side gas spaces (252, 256), and the third gas space (261) reaches the substrate (S) may be different from each other.

[0094] For example, the carrier gas supplied from the third gas space (261) located at the very bottom of the gas box (210) through the third supply space (260) can reach the first region (A1). The first region (A1) may correspond to a region that includes a portion of the front end of the substrate (S).

[0095] Additionally, the precursor gas and / or carrier gas supplied from the second central gas space (254) may reach the second region (A2). The second region (A2) may correspond to a region past the center at the front end of the substrate (S). Alternatively, the second region (A2) may correspond to more than half of the upstream side of the substrate (S) (or more than half of the front side of the substrate (S)). Here, 'upstream' may be determined according to the flow direction (arrow) in which the gas is supplied.

[0096] The second region (A2) may occupy approximately 40% to 70% of the total area of ​​the substrate (S). Meanwhile, the substrate (S) may be rotatably positioned in the susceptor (320). Therefore, even when a gas such as a precursor supplied from the second central gas space (254) reaches the upstream half region of the substrate (S), the precursor gas can reach the entire region of the substrate (S) due to the rotation of the substrate (S).

[0097] Meanwhile, the carrier gas and / or precursor gas supplied from the pair of second side gas spaces (252, 256) may reach the third region (A3) and the fourth region (A4). The third region (A3) and the fourth region (A4) may be located including the sides of the substrate (S).

[0098] The growth of the thin film in the edge region of the substrate (S) can be efficiently controlled by the gas supplied from the pair of second side gas spaces (252, 256). Additionally, the precursor gas supplied from the second central gas space (254) can be prevented from being dispersed to the side of the substrate (S) by the gas supplied from the pair of second side gas spaces (252, 256).

[0099] Additionally, the carrier gas supplied from the first gas space (241) located at the uppermost part of the gas box (210) through the first supply space (240) can reach the fifth region (A5). The fifth region (A5) may include the rear side region or the 'downstream' side region of the substrate (S).

[0100] The carrier gas supplied from the first gas space (241) can cause the precursor gas supplied from the second central gas space (254) to be concentrated on the substrate (S) by a pressing effect.

[0101] Meanwhile, the position of each of the aforementioned areas (A1, A2, A3, A4, A5) can be adjusted by adjusting the inclination angle of the guide plate (232, 234, 236, 238). Additionally, the position of each of the areas (A1, A2, A3, A4, A5) can be adjusted when adjusting the flow rate or velocity of the gas supplied from each of the gas spaces (241, 252, 254, 256, 261).

[0102] FIG. 6 is a graph illustrating the effect according to the flow rate of the gas supplied in the first gas space (241), the second gas space (251), and the third gas space (261).

[0103] FIG. 6 (A) illustrates the effect according to the flow rate of the gas supplied from the first gas space (241), FIG. 6 (B) illustrates the effect according to the flow rate of the gas supplied from the second gas space (251), and FIG. 6 (C) illustrates the effect according to the flow rate of the gas supplied from the third gas space (261). In each graph, the vertical axis represents the growth rate of the thin film, and the vertical axis represents the distance from one edge of the substrate (S) to the center.

[0104] As shown in (A) of FIG. 6, when the flow rate of the carrier gas supplied from the first gas space (241) changes from low speed (L) to high speed (H), it can be seen that the growth rate of the thin film increases in the entire area of ​​the substrate (S).

[0105] In addition, as shown in (B) of FIG. 6, when the flow rate of the precursor and / or carrier gas supplied from the second gas space (251) changes from low speed (L) to high speed (H), it can be seen that the growth rate becomes similar across the entire area of ​​the substrate (S), thereby increasing the uniformity of the thin film.

[0106] Furthermore, as shown in (C) of FIG. 6, when the flow rate of the carrier gas supplied from the third gas space (261) changes from low speed (L) to high speed (H), it can be seen that the peak position at which the growth rate of the thin film on the substrate (S) is fast changes.

[0107] Meanwhile, FIGS. 7 to 10 are front views illustrating gas boxes (2100, 3100, 4100, 5100) according to other embodiments.

[0108] Referring to FIG. 7, in the gas box (2100) according to the present embodiment, the vertical partitions (290, 292, 294, 295, 296, 297) may be provided in all of the gas spaces (241, 251, 261). Additionally, the vertical partitions (290, 292, 294, 295, 296, 297) may be provided in equal numbers in each of the gas spaces (241, 251, 261), and each of the gas spaces (241, 251, 261) may be partitioned into equal numbers.

[0109] Additionally, the plurality of guide plates (232, 234, 236, 238) may be composed of four arranged in a vertically stacked manner, and gas may be supplied toward the substrate (S) through three supply spaces (240, 250, 260) between the guide plates (232, 234, 236, 238).

[0110] Furthermore, three gas spaces (241, 251, 261) connected to the three supply spaces (240, 250, 260) may each be provided in a vertical direction inside the gas box (2100). Additionally, two vertical partitions (290, 292, 294, 295, 296, 297) may each be provided in the three gas spaces (241, 251, 261).

[0111] For example, a first-1 vertical partition (294) and a first-2 vertical partition (295) may be provided in the first gas space (241). Additionally, a second-1 vertical partition (290) and a second-2 vertical partition (292) may be provided in the second gas space (251). Furthermore, a third-1 vertical partition (296) and a third-2 vertical partition (297) may be provided in the third gas space (261).

[0112] Furthermore, the locations where the vertical partitions (290, 292, 294, 295, 296, 297) are installed may all be the same. That is, the width of each space partitioned by the vertical partitions (290, 292, 294, 295, 296, 297) in each gas space (241, 251, 261) may all be the same as that of the other gas spaces (241, 251, 261).

[0113] For example, the first gas space (241) may be divided into a first central gas space (244) and a pair of first side gas spaces (242, 246). Additionally, the second gas space (251) may be divided into a second central gas space (254) and a pair of second side gas spaces (252, 256). Furthermore, the third gas space (261) may be divided into a third central gas space (264) and a pair of third side gas spaces (262, 266).

[0114] In this case, the widths of the first central gas space (244), the second central gas space (254), and the third central gas space (264) may all be the same. Additionally, the widths of the first side gas space (242, 246), the second side gas space (252, 256), and the third side gas space (262, 266) may also all be the same.

[0115] In the present embodiment, two vertical partitions (290, 292, 294, 295, 296, 297) are provided in each of the three gas spaces (241, 251, 261), thereby allowing the three gas spaces (241, 251, 261) to be divided into a total of nine spaces.

[0116] In particular, the structure divided into nine spaces can achieve a rapid growth rate by suppressing the vapor phase reaction and improve surface defects of the deposited thin film, and can have the advantage of improving thin film thickness and doping uniformity through independent gas supply and concentration control of the left side gas spaces (242, 252, 262) and right side gas spaces (246, 256, 266), each divided into three layers.

[0117] Meanwhile, referring to FIG. 8, the positions of the vertical partitions (290, 292, 294', 295', 296', 297') placed in each gas space (241', 251, 261') in the gas box (3100) according to the present embodiment may differ from each other.

[0118] Accordingly, the width of each space partitioned by the vertical partition (290, 292, 294', 295', 296', 297') in each gas space (241', 251, 261') may be different from the space partitioned in other gas spaces (241', 251, 261').

[0119] For example, in the case of the first gas space (241') located at the top of the gas box (3100), the width of the first central gas space (244') in the central part may be larger than that of the other central gas spaces (254, 264'). On the other hand, the width of the first side gas space (242', 246') may be smaller than that of the other side gas spaces (252, 256, 262', 266').

[0120] Additionally, in the case of the third gas space (261') located at the bottom of the gas box (3100), the width of the third central gas space (264') in the central part may be smaller than that of the other central gas spaces (244', 254). On the other hand, the width of the third side gas space (262', 266') may be larger than that of the other side gas spaces (242', 246', 252, 256).

[0121] Ultimately, the width of each space can be adjusted by adjusting the position of the vertical partitions (290, 292, 294', 295', 296', 297'), and thereby the area where the gas supplied through the space reaches the substrate (S) can be adjusted.

[0122] Meanwhile, referring to FIG. 9, the number of vertical partitions (290, 292, 294, 296, 297, 298) placed in each gas space (241”, 251, 261”) in the gas box (4100) according to the present embodiment may differ from each other.

[0123] For example, the first gas space (241”) may be provided with one first vertical partition (294”), and the second gas space (251) may be provided with two second vertical partitions (290, 292). Additionally, the third gas space (261”) may be provided with three third vertical partitions (296”), 297”), 298”).

[0124] Accordingly, the first gas space (241”) can be divided into two spaces (242”), the second gas space (251) can be divided into three spaces (252, 254, 256), and the third gas space (261”) can be divided into four spaces (262”), 264”), 266”), and 268”).

[0125] In this way, by varying the number of vertical partitions (290, 292, 294, 296, 297, 298) provided in each gas space (241”, 251, 261”), each gas space (241”, 251, 261”) can be divided into different numbers of spaces, thereby allowing the flow rate, velocity, or concentration of the gas supplied to the substrate (S) to be controlled more precisely.

[0126] Meanwhile, referring to FIG. 10, in the gas box (5100) according to the present embodiment, the vertical partitions (290, 292, 296, 297) may not be provided in the first gas space (241) located at the top, but may be provided in the second gas space (251) located in the center in the vertical direction and the third gas space (261) located at the bottom.

[0127] For example, a second-1 vertical partition (290) and a second-2 vertical partition (292) may be provided in the second gas space (251), and a third-1 vertical partition (296) and a third-2 vertical partition (297) may be provided in the third gas space (261).

[0128] The locations where the vertical partitions (290, 292, 296, 297) are installed are all the same, but are not limited thereto. That is, the width of each space partitioned by the vertical partitions (290, 292, 296, 297) in each gas space (251, 261) may be the same as or different from that of the other gas spaces (251, 261).

[0129] For example, the second gas space (251) may be divided into a second central gas space (254) and a pair of second side gas spaces (252, 256). Furthermore, the third supply space (261) may be divided into a third central gas space (264) and a pair of third side gas spaces (262, 266).

[0130] In this case, the widths of the second central gas space (254) and the third central gas space (264) may all be the same. Additionally, the widths of the second side gas space (252, 256) and the third side gas space (262, 266) may also all be the same.

[0131] In this embodiment, the first gas space (241) located at the top is not divided, so that the carrier gas is injected into the first supply space (240) at high speed at the beginning of the process, thereby uniformly dispersing the momentum of the entire gas flow to promote laminar flow and maintaining the stability of the gas injection.

[0132] Furthermore, since the first gas space (241) is not divided, unnecessary mixing of gases is prevented, thereby suppressing particle generation. This prevents unnecessary coating or deposition on the lower surface of the upper cover (310), thereby preventing particles from falling from the upper cover (310) and preventing contamination of the substrate (S).

[0133] In addition, the second gas space (251) and the third gas space (261) are divided by the vertical partitions (290, 292, 296, 297), so that the concentration of gas supplied by each divided space can be finely adjusted, which is advantageous as the substrate (S) becomes larger.

[0134] In addition, if the second gas space (251) and the third gas space (261) are divided into three parts, a central part and an edge part, gas depletion in the edge region of the substrate (S) can be prevented.

[0135] Although the present invention has been described above with reference to preferred embodiments, those skilled in the art may modify and change the present invention in various ways without departing from the spirit and scope of the invention as described in the claims below. Therefore, if a modified embodiment basically includes the components of the claims of the present invention, it should be considered to be included within the technical scope of the present invention.

[0136] According to the present invention, when supplying gas toward a substrate, the region where the gas is supplied is partitioned, and the flow rate, flow velocity, or concentration of the gas supplied in each region is individually controlled, thereby increasing the growth rate of the thin film on the substrate and improving the thickness uniformity and doping uniformity of the thin film.

Claims

1. Chamber; A susceptor provided on the inner side of the chamber above, on which at least one substrate is seated; An upper cover provided on the inner side of the chamber, providing a processing space between the susceptor and the substrate for processing; and A chemical vapor deposition apparatus characterized by having a guide plate assembly having a plurality of guide plates, which supplies process gas toward the substrate placed in the processing space.

2. In Paragraph 1, A chemical vapor deposition apparatus characterized in that the plurality of guide plates are stacked and arranged in a vertical direction, and the process gas is supplied toward the substrate through the plurality of supply spaces between the plurality of guide plates.

3. In Paragraph 2, A chemical vapor deposition apparatus characterized in that at least some of the plurality of guide plates are arranged inclined toward the substrate.

4. In Paragraph 3, Among the plurality of guide plates mentioned above A chemical vapor deposition apparatus characterized by the fact that the angle of inclination of the top plate positioned at the top is the largest, and the angle of inclination of the guide plate decreases as it goes down.

5. In Paragraph 3, Among the plurality of guide plates mentioned above A chemical vapor deposition apparatus characterized in that the bottom plate positioned at the bottom is positioned horizontally with respect to the substrate.

6. In Paragraph 2, The above guide plate assembly is connected to a gas box to which the process gas is supplied, and A chemical vapor deposition apparatus characterized by having a plurality of gas spaces vertically connected to the supply space, each provided on the inner side of the gas box, and having a vertical partition wall in at least a portion of the gas spaces.

7. In Paragraph 6, A chemical vapor deposition apparatus characterized in that the position or number of vertical partitions provided in each of the plurality of gas spaces are different from each other.

8. In Paragraph 6, A chemical vapor deposition apparatus characterized in that, among the plurality of gas spaces, the main gas space supplying a precursor toward the substrate is divided by the vertical partition into a central gas space and side gas spaces disposed on both sides of the central gas space.

9. In Paragraph 8, The width of the central gas space mentioned above is A chemical vapor deposition apparatus characterized by having the same diameter as the substrate.

10. In Paragraph 1, The plurality of guide plates comprises four guide plates stacked and arranged in a vertical direction, A chemical vapor deposition apparatus characterized by the process gas being supplied toward the substrate through three supply spaces between the guide plates.

11. In Paragraph 10, The above guide plate assembly is connected to a gas box to which the process gas is supplied, and A chemical vapor deposition apparatus characterized by having three gas spaces vertically connected to the three supply spaces each provided inside the gas box, and having two vertical partitions each provided in the three gas spaces so that the gas spaces are divided into a total of nine spaces.

12. In Paragraph 10, A chemical vapor deposition apparatus characterized in that at least some of the plurality of guide plates are arranged inclined toward the substrate.

13. External chamber; An inner chamber provided on the inner side of the above outer chamber; A susceptor provided on the inner side of the above-mentioned inner chamber, on which at least one substrate is seated; An upper cover provided on the inner side of the inner chamber, providing a processing space between the substrate and the susceptor; and A chemical vapor deposition apparatus characterized by having a guide plate assembly having a plurality of guide plates, which supplies process gas toward the substrate placed in the processing space.

14. In Paragraph 13, A chemical vapor deposition apparatus characterized in that the plurality of guide plates are stacked and arranged in a vertical direction, and the process gas is supplied toward the substrate through the plurality of supply spaces between the plurality of guide plates.

15. In Paragraph 14, The above guide plate assembly is connected to a gas box to which the process gas is supplied, and A chemical vapor deposition apparatus characterized by having a plurality of gas spaces each connected to the supply space on the inner side of the gas box, and having a vertical partition wall in at least a part of the gas space.

16. In Paragraph 13, A chemical vapor deposition apparatus characterized in that at least some of the plurality of guide plates are arranged inclined toward the substrate.

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