Processing method and processing system

Abstract

This processing method is for removing at least a part of an object composed of a material containing a polymer chain and includes irradiating the object with a processing beam, and exposing a processed part of the object, which has been processed by irradiation with the processing beam, to a fluorine gas atmosphere.

Description

Processing Method and Processing System

[0001] The present invention relates to the technical field of a processing method and a processing system capable of processing an object, for example.

[0002] Patent Document 1 describes a processing system that processes an object by irradiating the object with a laser beam. In this type of processing system, it is required to appropriately process the object.

[0003] U.S. Patent No. 6,225,032

[0004] According to a first aspect, there is provided a processing method for removing at least a part of an object composed of a material containing polymer chains, the method including irradiating the object with a processing beam and exposing a processed portion of the object processed by the irradiation of the processing beam to a fluorine gas atmosphere.

[0005] According to a second aspect, there is provided a processing apparatus for removing at least a part of an object, the apparatus including a beam irradiation device that irradiates the object with a processing beam and a gas supply device that exposes a processed portion of the object processed by the irradiation of the processing beam to a fluorine gas atmosphere.

[0006] Figure 1 is a block diagram showing the overall configuration of the processing system in this embodiment. Figure 2 is a schematic cross-sectional view showing an example of the configuration of the processing apparatus in this embodiment. Figure 3 is a block diagram showing an example of the configuration of the processing apparatus in this embodiment. Figure 4 is a block diagram showing an example of the configuration of the control device in this embodiment. Figures 5A to 5C are cross-sectional views showing the removal process performed on a workpiece. Figure 6A is a perspective view showing an example of a riblet structure, and Figure 6B is a cross-sectional view showing an example of a riblet structure. Figures 7A to 7C show the structural formulas of the polymer chains constituting the workpiece. Figure 8 is a flowchart showing the flow of processing operations performed by the processing system to solve the technical problem of reduced water repellency of the workpiece. Figure 9 is a cross-sectional view showing a processing head that irradiates the workpiece with processing light and a gas supply device that supplies supply gas. Figures 10A to 10B are cross-sectional views showing an example of a method for supplying supply gas to the space in which at least a part of the workpiece is present. Figures 11A to 11B schematically show the ends of polymer chains exposed to a fluorine atmosphere. Figure 12 is a schematic cross-sectional view showing an example of the configuration of a processing apparatus equipped with a temperature control device.

[0007] The following describes embodiments of the machining method and machining system with reference to the drawings. The following describes embodiments of the machining method and machining system using a machining system SYS capable of machining a workpiece W. However, the present invention is not limited to the embodiments described below.

[0008] Furthermore, the following explanation will describe the positional relationships of the various components constituting the machining system SYS using the XYZ Cartesian coordinate system, defined by the mutually orthogonal X, Y, and Z axes. For the sake of clarity, the following explanation will assume that the X-axis and Y-axis directions are horizontal (i.e., predetermined directions within the horizontal plane), and the Z-axis direction is vertical (i.e., a direction perpendicular to the horizontal plane, essentially the up and down direction). The rotational directions (in other words, tilt directions) around the X, Y, and Z axes will be referred to as the θX direction, θY direction, and θZ direction, respectively. Here, the Z-axis direction may also be defined as the direction of gravity. The XY plane may also be defined as the horizontal direction.

[0009] (1) Configuration of the SYS machining system First, the configuration of the SYS machining system in this embodiment will be described.

[0010] (1-1) Overall Configuration of the SYS Machining System First, the overall configuration of the SYS machining system in this embodiment will be described with reference to Figure 1. Figure 1 is a block diagram showing the overall configuration of the SYS machining system in this embodiment.

[0011] As shown in Figure 1, the processing system SYS comprises a processing device 1 and a control device 2. The processing device 1 may also be referred to as a processing unit, and the control device 2 may also be referred to as a control unit.

[0012] The processing apparatus 1 is capable of processing the workpiece W (see Figure 2), which is the object to be processed (i.e., the workpiece). Here, if a coating (or any film-like or layered member, hereinafter the same) is formed on the base material, the processing apparatus 1 may process at least a part of the coating without processing the base material. In this case, this coating may also be referred to as the workpiece W. Figure 2 shows an example where the workpiece W is a coating formed on the base material BM. In the following explanation, we will also proceed using the example where the workpiece W is a coating formed on the base material BM. However, the workpiece W is not limited to a coating formed on the base material BM.

[0013] In the following explanation, we will use the example where the workpiece W is a material containing polymer chains, as will be explained in detail later. It is also possible that the first part of the workpiece W is composed of a first type of material, and the second part of the workpiece W, which is different from the first part, is composed of a second type of material different from the first type of material.

[0014] The processing apparatus 1 irradiates the workpiece W with processing light EL in order to process the workpiece W. The processing light EL can be any type of light, as long as it is possible to process the workpiece W by irradiating it. In this embodiment, the explanation will proceed using the example that the processing light EL is laser light, but the processing light EL can be a different type of light from laser light. Furthermore, the wavelength of the processing light EL can be any wavelength, as long as it is possible to process the workpiece W by irradiating it. For example, the processing light EL may be visible light or invisible light (for example, at least one of infrared light, ultraviolet light, and extreme ultraviolet light). The processing light EL may include pulsed light. Alternatively, the processing light EL may not include pulsed light. In other words, the processing light EL may be continuous light. Since light is an example of an energy beam, the processing light EL may also be called a processing beam.

[0015] The control device 2 controls the processing device 1. Specifically, the control device 2 controls the operation of the processing device 1. For example, the control device 2 may control the processing device 1 to process the workpiece W.

[0016] (1-2) Configuration of Processing Apparatus 1 Next, the configuration of processing apparatus 1 in this embodiment will be described with reference to Figures 2 to 3. Figure 2 is a schematic cross-sectional view showing an example of the configuration of processing apparatus 1 in this embodiment. Figure 3 is a block view showing an example of the configuration of processing apparatus 1 in this embodiment.

[0017] As shown in Figures 2 and 3, the processing apparatus 1 comprises a processing light source 11, a processing head 12, a head drive system 13, a stage 14, a stage drive system 15, and a gas supply device 16.

[0018] The processing light source 11 is a light source that generates processing light EL. If the processing light EL is laser light, the processing light source 11 may include, for example, a laser diode. If the processing light EL includes pulsed light, the processing light source 11 may be a light source capable of pulse oscillation. If the processing light EL includes continuous light, the processing light source 11 may be a CW light source that generates a continuous wave (CW).

[0019] However, the processing apparatus 1 does not necessarily have to be equipped with a processing light source 11. In this case, processing light EL generated by an external light source may be supplied to the processing apparatus 1 via an optical transmission member such as an optical fiber.

[0020] The processing head 12 irradiates the workpiece W with processing light EL generated by the processing light source 11. For this reason, the processing head 12 may also be called a beam irradiation device. In order to irradiate the workpiece W with processing light EL, the processing head 12 may be equipped with a processing optical system 121. The processing optical system 121 may include at least one of a lens (i.e., a refractive optical element) and a mirror (i.e., a reflective optical element). The processing optical system 121 may irradiate the workpiece W with processing light EL generated by the processing light source 11 using at least one of the lens and mirror provided in the processing optical system 121.

[0021] The head drive system 13 moves the machining head 12. For this reason, the head drive system 13 may also be called a moving device. An example of the head drive system 13 is a drive system comprising a drive source that generates driving force to move the machining head 12 and a power transmission mechanism that transmits the driving force generated by the drive source to the machining head 12. An example of the drive source is a motor (in other words, an actuator). An example of the power transmission mechanism is at least one of a ball screw, a slide guide, and a drive shaft. Another example of the head drive system 13 is a manipulator such as a robot arm. Another example of the head drive system 13 is an automated guided vehicle such as an AGV (Automatic Guided Vehicle). Another example of the head drive system 13 is a flying object such as a drone.

[0022] The head drive system 13 may move the machining head 12 along a movement axis along at least one of the X-axis, Y-axis, and Z-axis directions (i.e., linear movement). The head drive system 13 may also move the machining head 12 along at least one of the θX direction, θY direction, and θZ direction in addition to or instead of at least one of the X-axis, Y-axis, and Z-axis directions. In other words, the head drive system 13 may rotate the machining head 12 around at least one of the rotation axes along the X-axis direction (i.e., A-axis), the rotation axis along the Y-axis direction (i.e., B-axis), and the rotation axis along the Z-axis direction (i.e., C-axis).

[0023] When the head drive system 13 moves the machining head 12, the relative positional relationship between the machining head 12 and the stage 14 (and furthermore, the workpiece W placed on the stage 14) changes. As a result, the relative positional relationship between the irradiation area EA, onto which the machining light EL is irradiated by the machining head 12, and the workpiece W changes. In other words, the irradiation area EA onto which the machining light EL is irradiated by the machining head 12 moves relative to the workpiece W. The machining apparatus 1 may machine the workpiece W while moving the machining head 12. Specifically, the machining apparatus 1 may machine a desired position on the workpiece W by moving the machining head 12 so that the machining light EL is irradiated onto the desired position on the workpiece W.

[0024] However, the processing device 1 does not have to be equipped with a head drive system 13. In this case, the processing head 12 does not have to be movable. The processing head 12 may be fixed in a predetermined position.

[0025] A workpiece W is placed on the stage 14. For this reason, the stage 14 may also be called a mounting device or an object mounting device. The stage 14 is capable of supporting the workpiece W placed on the stage 14. The stage 14 may also be capable of holding the workpiece W placed on the stage 14. In this case, the stage 14 may be equipped with at least one of the following for holding the workpiece W: a mechanical chuck, an electrostatic chuck, and a vacuum suction chuck. Alternatively, a jig for holding the workpiece W may hold the workpiece W, and the stage 14 may hold the jig holding the workpiece W. Alternatively, the stage 14 may not hold the workpiece W placed on the stage 14. In this case, the workpiece W may be placed on the stage 14 without clamps.

[0026] However, the processing apparatus 1 does not necessarily have to be equipped with a stage 14. In this case, the workpiece W does not have to be placed on the stage 14. For example, the workpiece W may be placed on the floor or the like.

[0027] The stage drive system 15 moves the stage 14. For this reason, the stage drive system 15 may also be called a moving device. An example of the stage drive system 15 is a drive device comprising a drive source that generates driving force to move the stage 14 and a power transmission mechanism that transmits the driving force generated by the drive source to the stage 14. An example of the drive source is a motor (in other words, an actuator). An example of the power transmission mechanism is at least one of a ball screw, a slide guide, and a drive shaft. Another example of the stage drive system 15 is a manipulator such as a robot arm. Another example of the stage drive system 15 is an automated guided vehicle (AGV). Another example of the stage drive system 15 is a flying object such as a drone.

[0028] The stage drive system 15 may move the stage 14 along a movement axis along at least one of the X-axis, Y-axis, and Z-axis directions (i.e., linear movement). The stage drive system 15 may also move the stage 14 along at least one of the θX direction, θY direction, and θZ direction in addition to or instead of at least one of the X-axis, Y-axis, and Z-axis directions. In other words, the stage drive system 15 may rotate the stage 14 around at least one of the rotation axes along the X-axis direction (i.e., A-axis), the rotation axis along the Y-axis direction (i.e., B-axis), and the rotation axis along the Z-axis direction (i.e., C-axis).

[0029] When the stage drive system 15 moves the stage 14, the relative positional relationship between the machining head 12 and the stage 14 (and furthermore, the workpiece W placed on the stage 14) changes. As a result, the relative positional relationship between the irradiation area EA, onto which the machining head 12 irradiates the machining light EL, and the workpiece W changes. In other words, the irradiation area EA onto which the machining head 12 irradiates the machining light EL moves relative to the workpiece W. The machining apparatus 1 may machine the workpiece W while moving the stage 14. Specifically, the machining apparatus 1 may machine a desired position on the workpiece W by moving the stage 14 so that the machining light EL is irradiated onto the desired position on the workpiece W.

[0030] However, the processing apparatus 1 does not have to be equipped with a stage drive system 15. In this case, the stage 14 does not have to be movable. The stage 14 may be fixed in a predetermined position.

[0031] The gas supply device 16 is a device capable of exposing at least a portion of the workpiece W to a fluorine gas atmosphere. For example, the gas supply device 16 may expose at least a portion of the workpiece W to a fluorine gas atmosphere by supplying a supply gas SG containing at least fluorine gas to the space in which at least a portion of the workpiece W is located. For example, the gas supply device 16 may expose at least a portion of the workpiece W to a fluorine gas atmosphere by supplying a supply gas SG toward at least a portion of the workpiece W.

[0032] Furthermore, "fluorine gas atmosphere" may mean an atmosphere (in other words, a space, especially a gas space) containing at least fluorine gas. Also, "exposing at least a portion of the workpiece W to a fluorine gas atmosphere" may mean exposing at least a portion of the workpiece W to at least fluorine gas. "Exposing at least a portion of the workpiece W to a fluorine gas atmosphere" may mean exposing at least a portion of the workpiece W to a supply gas SG containing at least fluorine gas. "Exposing at least a portion of the workpiece W to a fluorine gas atmosphere" may mean placing at least a portion of the workpiece W in a fluorine gas atmosphere. "Exposing at least a portion of the workpiece W to a fluorine gas atmosphere" may mean supplying at least fluorine gas (supply gas SG containing fluorine gas) to a space in which at least a portion of the workpiece W exists. "Exposing at least a portion of the workpiece W to a fluorine gas atmosphere" may mean forming a fluorine gas atmosphere in a space by supplying at least fluorine gas (supply gas SG containing fluorine gas) to a space in which at least a portion of the workpiece W exists.

[0033] The fluorine gas contained in the supply gas SG is elemental fluorine (chemical formula: F ２ ) may be a gas. In other words, in this embodiment, the fluorine gas is elemental fluorine (chemical formula: F ２ ) may also mean the gas of fluorine. In this case, fluorine gas itself may be used as the supply gas SG. The supply gas SG may be fluorine gas. Alternatively, as will be described later, the supply gas may contain a gas other than fluorine gas in addition to fluorine gas. In other words, the supply gas SG may be a mixed gas in which fluorine gas and a gas other than fluorine gas are mixed.

[0034] The technical reasons for exposing at least a portion of the workpiece W to a fluorine gas atmosphere will be explained in detail later.

[0035] (1-3) Configuration of the control device 2 Next, the configuration of the control device 2 of this embodiment will be described with reference to Figure 4. Figure 4 is a block diagram showing the configuration of the control device 2 of this embodiment.

[0036] As shown in Figure 4, the control device 2 comprises an arithmetic unit 21 and a storage device 22. Furthermore, the control device 2 may also comprise a communication device 23, an input device 24, and an output device 25. However, the control device 2 does not have to comprise at least one of the communication device 23, the input device 24, and the output device 25. The arithmetic unit 21, the storage device 22, the communication device 23, the input device 24, and the output device 25 may be connected via a data bus 26.

[0037] The arithmetic unit 21 is hardware that includes at least one circuit (for example, at least one of an electronic circuit and an electrical circuit). For this reason, the arithmetic unit 21 may be referred to as a circuit group. The arithmetic unit 21 may be referred to as a control circuit. The control device 2, which includes the arithmetic unit 21, may be referred to as a control circuit.

[0038] The arithmetic unit 21 includes at least one processor (i.e., one or more processors) as hardware. The processor may include, for example, a processor conforming to a von Neumann computer architecture. A processor conforming to a von Neumann computer architecture may include at least one of a CPU (Central Processing Unit) and a GPU (Graphics Processing Unit). The processor may also include, for example, a processor conforming to a non-von Neumann computer architecture. A processor conforming to a non-von Neumann computer architecture may include at least one of an FPGA (Field Programmable Gate Array) and an ASIC (Application Specific Circuit). The processor may be implemented by a group of circuits (e.g., at least one of an electronic circuit and an electrical circuit).

[0039] The arithmetic unit 21 reads a computer program 221 which includes at least one of computer program code and computer program instructions. For example, the arithmetic unit 21 may read a computer program 221 stored in a storage device 22. For example, the arithmetic unit 21 may read a computer program 221 stored in a computer-readable and non-temporary recording medium using a recording medium reader (not shown) provided by the control device 2. The computer program 221 read from the recording medium may be stored in the storage device 22. The arithmetic unit 21 may obtain (i.e., download or read) a computer program 221 from a device (not shown) located outside the control device 2 via a communication device 23 (or other communication device). The downloaded computer program 221 may be stored in the storage device 22.

[0040] The arithmetic unit 21 executes the loaded computer program 221. As a result, logical functional blocks for executing the processing that the control device 2 should perform (for example, processing and control methods for controlling the operation of the processing device 1) are realized within the arithmetic unit 21. In other words, the arithmetic unit 21, together with the storage device 22 on which the computer program 221 is recorded (in other words, together with the storage device 22 and the computer program 221 recorded in the storage device 22, etc.), can function as a controller or computer for realizing logical functional blocks for executing the processing that the control device 2 should perform. That is, together with at least one processor in the arithmetic unit 21, the memory (recording medium) in the storage device 22, etc., and the computer program 221 are configured so that the control device 2 performs the processing that the control device 2 should perform.

[0041] The arithmetic unit 21 may include a single processor. In this case, the arithmetic unit 21 may use a single processor to perform the following operations (for example, processing to control the operation of the processing device 1). For example, if the arithmetic unit 21 performs a first operation (for example, a first process to control the operation of the processing device 1) and a second operation (for example, a second process to control the operation of the processing device 1), the arithmetic unit 21 may use a single processor to perform both the first and second operations. Alternatively, the arithmetic unit 21 may include multiple processors. In this case, the arithmetic unit 21 may use any one of the multiple processors to perform each of the following operations. For example, if the arithmetic unit 21 includes a first and a second processor and performs the first and second operations, the arithmetic unit 21 may use any one of the first and second processors to perform each of the first and second operations. For example, the arithmetic unit 21 may use the first processor to perform the first operation, or use the first processor to perform the second operation, or use the second processor to perform the first operation, or use the second processor to perform the second operation.

[0042] The computing device 21 may implement a computational model that can be constructed by machine learning by executing a computer program 221. An example of a computational model that can be constructed by machine learning is a computational model that includes a neural network (so-called artificial intelligence (AI)). In this case, the learning of the computational model may include learning the parameters of the neural network (for example, at least one of the weights and biases). The computing device 21 may use the computational model to control the operation of the processing device 1. That is, the operation of controlling the operation of the processing device 1 may include the operation of controlling the operation of the processing device 1 using the computational model. The computing device 21 may also implement a computational model that has been constructed by offline machine learning using training data. Furthermore, the computational model implemented in the computing device 21 may be updated by online machine learning on the computing device 21. Alternatively, the arithmetic unit 21 may control the operation of the processing apparatus 1 using, in addition to or instead of, the arithmetic model implemented in the arithmetic unit 21, an arithmetic model implemented in an external device (i.e., a device provided outside the control device 2).

[0043] As a recording medium for recording the computer program 221 executed by the arithmetic unit 21, at least one of an optical disk such as a CD-ROM, CD-R, CD-RW, flexible disk, MO, DVD-ROM, DVD-RAM, DVD-R, DVD+R, DVD-RW, DVD+RW, and Blu-ray (registered trademark), a magnetic medium such as a magnetic tape, a magneto-optical disk, a semiconductor memory such as a USB memory, and any other medium capable of storing a program may be used. The recording medium may include a device capable of recording the computer program 221 (for example, a general-purpose device or a dedicated device in which the computer program 221 is implemented in a state executable in at least one of the forms of software and firmware). Further, each process and function included in the computer program 221 may be realized by a logical processing block realized in the arithmetic unit 21 when the arithmetic unit 21 (that is, the processor) executes the computer program 221, or may be realized by hardware such as a predetermined gate array (FPGA (Field Programmable Gate Array), ASIC (Application Specific Integrated Circuit)) included in the arithmetic unit 21, or may be realized in a form in which a logical processing block and a partial hardware module realizing some elements of the hardware are mixed.

[0044] The storage device 22 includes at least one memory capable of storing desired data. In other words, the storage device 22 includes at least one memory containing desired data. The memory may be realized by a circuit group (for example, at least one of an electronic circuit and an electrical circuit). For example, the storage device 22 may store the computer program 221 executed by the arithmetic unit 21. In this case, the storage device 22 (memory) may be used as the above-described recording medium for recording the computer program 221 executed by the arithmetic unit 21. The storage device 22 may temporarily store data temporarily used by the arithmetic unit 21 when the arithmetic unit 21 is executing the computer program 221. The storage device 22 may store data that the control device 2 stores for a long term. Note that the storage device 22 may include at least one of a RAM (Random Access Memory), a ROM (Read Only Memory), a hard disk device, a magneto-optical disk device, a SSD (Solid State Drive), and a disk array device. That is, the storage device 22 may include a non-temporary recording medium.

[0045] The communication device 23 can communicate with a device outside the control device 2 (for example, the processing device 1) via a communication network not shown.

[0046] The input device 24 is a device that receives input of information to the control device 2 from outside the control device 2. For example, the input device 24 may include an operating device (for example, at least one of a keyboard, a mouse, and a touch panel) that can be operated by a user of the control device 2. For example, the input device 24 may include a recording medium reading device capable of reading information recorded as data on an externally attachable recording medium with respect to the control device 2.

[0047] Note that information can be input as data to the control device 2 from a device outside the control device 2 via the communication device 23. In this case, the communication device 23 may function as an input device that receives input of information to the control device 2 from outside the control device 2.

[0048] The output device 25 is a device that outputs information to the outside of the control device 2. For example, the output device 25 may include at least one of the following: a display device (so-called display) capable of displaying information as an image, an audio device (so-called speaker) capable of outputting information as sound, and a printing device (so-called printer) capable of printing desired information onto paper. For example, the output device 25 may output information as data to a recording medium that can be attached externally to the control device 2.

[0049] Furthermore, the control device 2 can output information as data to devices outside the control device 2 via the communication device 23. In this case, the communication device 23 may function as an output device that outputs information to the outside of the control device 2.

[0050] (2) Operations performed by the SYS machining system Next, we will explain the operations performed by the SYS machining system.

[0051] (2-1) Machining operations for processing the workpiece W As described above, the machining system SYS (in particular, the machining apparatus 1) can process the workpiece W by irradiating the workpiece W with machining light EL. In other words, the machining system SYS (in particular, the machining apparatus 1) may perform machining operations for processing the workpiece W using machining light EL.

[0052] The following description describes an example in which the processing device 1 performs a removal process on a workpiece W. In other words, the following description describes an example in which the processing device 1 performs a removal process to remove a portion of the workpiece W. As an example, the processing device 1 may perform the removal process using the principle of non-thermal processing (e.g., ablation processing). In other words, the processing device 1 may perform non-thermal processing (e.g., ablation processing) on ​​the workpiece W. In order to perform non-thermal processing, the processing device 1 may use light with a high photon density (in other words, fluence) as the processing light EL. As an example, the processing device 1 may use light containing pulsed light with an emission time of nanoseconds or less, picoseconds or less, or femtoseconds or less as the processing light EL. In other words, the processing device 1 may use light containing pulsed light with a pulse width of nanoseconds or less, picoseconds or less, or femtoseconds or less as the processing light EL. In this case, as shown in Figure 5A, a cross-sectional view of the workpiece W irradiated with the processing light EL, the material constituting the energy transfer portion of the workpiece W to which the energy of the processing light EL is transferred instantly evaporates and scatters. In other words, the material constituting the energy transfer portion of the workpiece W evaporates and scatters within a time sufficiently shorter than the thermal diffusion time of the workpiece W. The material constituting the energy transfer portion of the workpiece W may also sublimate without going through a molten state. In this case, the material constituting the energy transfer portion of the workpiece W may be released from the workpiece W as at least one of ions, atoms, radicals, molecules, clusters, and solid fragments. As a result, as shown in Figure 5B, the material constituting the energy transfer portion of the workpiece W is removed from the workpiece W. The processing apparatus 1 may perform this removal process while moving the irradiation area EA, to which the processing light EL is irradiated, relative to the workpiece W. As a result, as shown in Figure 5C, the surface of the workpiece W is at least partially removed along the scanning trajectory of the processing light EL (i.e., the movement trajectory of the irradiation area EA).

[0053] However, the processing device 1 may perform removal processing using the principle of thermal processing.

[0054] The processing apparatus 1 may form a desired structure on the surface of the workpiece W by processing the workpiece W. In other words, the processing apparatus 1 may form a desired structure on the surface of the workpiece W by irradiating the workpiece W with processing light EL. However, the processing apparatus 1 may perform processing other than that for forming a desired structure on the surface of the workpiece W. An example of processing other than that for forming a desired structure on the surface of the workpiece W is surface leveling of the workpiece W. Surface leveling of the workpiece W may include grinding the surface of the workpiece W to make it flat.

[0055] An example of a desired structure is a riblet structure. The riblet structure may include a structure that can reduce the resistance of the surface of the workpiece W to the fluid (in particular, at least one of frictional resistance and turbulent frictional resistance). For this reason, the riblet structure may be formed on a workpiece W having a member that is placed (in other words, located) in a fluid. Here, "fluid" means a medium (e.g., at least one of gas and liquid) flowing relative to the surface of the workpiece W. For example, if the surface of the workpiece W moves relative to the medium while the medium itself is stationary, this medium may be called a fluid. Note that the state in which the medium is stationary may mean a state in which the medium is not moving relative to a predetermined reference object (e.g., the ground surface).

[0056] Furthermore, as described above, if the workpiece W is a coating formed on a substrate BM, the riblet structure formed on the surface of the workpiece W may be considered a structure capable of reducing the fluid resistance of the surface of the substrate BM on which the workpiece W is formed.

[0057] An example of a riblet structure is shown in Figures 6A and 6B. As shown in Figures 6A and 6B, the riblet structure may include a structure in which a plurality of grooves GV extending along a first direction (e.g., the X-axis direction) along the surface of the workpiece W are arranged along a second direction (e.g., the Y-axis direction) that is along the surface of the workpiece W and intersects the first direction. In other words, the riblet structure may include a structure in which a plurality of convex structures LD extending along a first direction (e.g., the X-axis direction) along the surface of the workpiece W are arranged along a second direction (e.g., the Y-axis direction) that is along the surface of the workpiece W and intersects the first direction.

[0058] The workpiece W may be a coating that can be attached to a moving body that moves in a fluid. Alternatively, the workpiece W may be a coating formed on the surface of this moving body. In other words, the moving body may be the base material BM of the workpiece W. In this case, the workpiece W may be considered to constitute the surface of the moving body. As an example, the workpiece W may be a coating formed on the surface of a part of the moving body (for example, a component used in the moving body). Examples of moving bodies that move in a fluid include at least one of the following: aircraft, wind turbines, engine turbines, and power generation turbines. When such a riblet structure is formed on the workpiece W, the moving body becomes easier to move relative to the fluid. Therefore, the resistance that hinders the movement of the moving body relative to the fluid is reduced, leading to energy savings. In other words, it becomes possible to manufacture environmentally friendly moving bodies. Therefore, processing device 1 has the potential to contribute to "13.2.2 Reduction of total greenhouse gas emissions per year," which is one of the goals set out in Goal 13 of the United Nations-led Sustainable Development Goals (SDGs), "Take urgent action to combat climate change and its impact."

[0059] Furthermore, the first part of the moving body, including its surface, may be considered as the workpiece W, and the second part of the moving body, on which the first part is formed, may be considered as the base material BM. Alternatively, the first part of an object, including its surface, which is either a moving body or any object different from a moving body, may be considered as the workpiece W, and the second part of the object, on which the first part is formed, may be considered as the base material BM. In other words, two different parts of a single moving body (or a single object) may be considered as the workpiece W and the base material BM, respectively. (2-2) Technical problems of the processing operation As described above, the processing apparatus 1 irradiates the workpiece W (especially the surface of the workpiece W) with processing light EL in order to perform removal processing on the workpiece W. In this case, when the processing apparatus 1 performs removal processing on a workpiece W composed of a material containing polymer chains, the following technical problems may arise.

[0060] Figure 7A shows an example of the structural formula of a polymer chain constituting workpiece W. In Figure 7A, the circles labeled "C" represent carbon atoms. Therefore, Figure 7A shows a carbon-based polymer chain, whose main structure is carbon atoms, as an example of a polymer chain. In other words, Figure 7A shows a carbon-based polymer chain containing a main chain whose main structure is carbon atoms, as an example of a polymer chain. However, the polymer chain constituting workpiece W is not limited to a carbon-based polymer chain. For example, a silicon-based polymer chain, whose main structure is silicon atoms, may be used as the polymer chain constituting workpiece W. That is, a silicon-based polymer chain containing a main chain whose main structure is silicon atoms may be used as the polymer chain constituting workpiece W.

[0061] Furthermore, in Figure 7A, the circles marked with "?" represent any element or group bonded to the main structural element (in the example shown in Figure 7A, the element carbon). Examples of any element bonded to the main structural element include at least one of the following: oxygen (oxygen atom), hydrogen (hydrogen atom), nitrogen (nitrogen atom), and fluorine (fluorine atom). Examples of any group bonded to the main structural element include at least one of any substituent, any characteristic group, and any functional group.

[0062] Examples of workpieces W composed of materials containing polymer chains include films made from materials containing polymer chains. Examples of workpieces W composed of materials containing polymer chains include resins made from materials containing polymer chains. Examples of workpieces W composed of materials containing polymer chains include paints made from materials containing polymer chains. Examples of workpieces W composed of materials containing polymer chains include rubber made from materials containing polymer chains.

[0063] A workpiece W made of a material containing polymer chains may include a base member made of a material not containing polymer chains and a layer member made of a material containing polymer chains and formed on the surface of the base member. Alternatively, a workpiece W made of a material containing polymer chains may include a base member made of a material containing polymer chains. If a workpiece W made of a material containing polymer chains includes a base member made of a material containing polymer chains, a layer member made of a material containing polymer chains does not need to be formed on the surface of the base member. In either case, the workpiece W including a base member and a layer member, or a workpiece W including a base member but not a layer member, is still made of a material containing polymer chains.

[0064] One technical reason for constructing the workpiece W from a material containing polymer chains is to impart liquid repellency to the workpiece W. Liquid repellency may also typically be water repellency. For the sake of clarity, the following explanation will describe an example of imparting water repellency, which is an example of liquid repellency, to the workpiece W. However, liquid repellency is not limited to water repellency. In the following explanation, the term "water repellency" may be replaced with the term "liquid repellency" (i.e., it may be interpreted differently).

[0065] For example, when any element or group that exhibits water repellency is bonded to the main structural element (carbon in the example shown in Figure 7A), the material containing the polymer chain becomes a water-repellent material. An example of any element that exhibits water repellency is the element fluorine (fluorine atom). An example of any group that exhibits water repellency is a water-repellent group. An example of a water-repellent group is a group containing the element fluorine (fluorine atom).

[0066] Even when the processing device 1 performs a removal process on a workpiece W composed of such polymer chains, the processing device 1 irradiates the workpiece W with processing light EL. As a result, the energy of the processing light EL is transmitted to the part of the workpiece W to be removed RP (see Figure 5C above), and as a result, the part of the workpiece W to be removed RP is removed from the workpiece W.

[0067] On the other hand, the energy of the processing light EL may also be transmitted to the processed portion PP (see Figure 5C) of the workpiece W that has been processed by irradiation with the processing light EL. Note that the processed portion PP of the workpiece W may mean the part of the workpiece W that should not be removed by the removal process. In other words, the processed portion PP of the workpiece W may mean the part of the workpiece W that remains as at least a part of the workpiece W after the removal process is completed.

[0068] Here, if the workpiece W is made of a material containing polymer chains, as shown in Figure 7A, the processing apparatus 1 may irradiate the workpiece W with processing light EL, thereby irradiating the polymer chains constituting the workpiece W with processing light EL. In other words, the processing apparatus 1 may irradiate the polymer chains constituting the workpiece W by irradiating the workpiece W with processing light EL to the part of the workpiece W made of a material containing polymer chains (for example, the layer member or base member described above). In this case, if the processed part PP that remains as part of the workpiece W after the energy of the processing light EL has been transferred is made of a material containing polymer chains, then the energy of the processing light EL may also be transferred to the polymer chains constituting the processed part PP. As a result, even if the processed part PP is not removed by the energy of the processing light EL (for example, it does not evaporate, scatter, or sublimate), the polymer chains constituting the processed part PP may be cut by the energy of the processing light EL. In other words, the polymer chains constituting the processed part PP may be cut by the processing light EL irradiated onto the workpiece W. In this embodiment, the cutting of polymer chains may include the cutting of the main chain of the polymer chain. However, the severance of the polymer chain may include the severance of the side chains of the polymer chain.

[0069] When the polymer chains constituting the processed PP are cut by the energy of the processing light EL, as shown in Figure 7B, the polymer chains have ends to which any element or any group can be bonded. In this case, as shown in Figure 7C, if an element or group different from the original element or group that constituted the polymer chain is newly bonded to the end of the polymer chain, a technical problem arises in that the properties of the polymer chain may change. Figure 7C shows an example in which an oxygen element (oxygen atom) is newly bonded to the end of the polymer chain that was created by the cutting of the polymer chain. As a result, a technical problem arises in that the properties of the workpiece W, which is composed of a material containing polymer chains, may change.

[0070] For example, if a fluorine element or a group containing a fluorine element that exhibits water repellency is bonded to the main structural element (or main chain), then, as described above, the workpiece W will be water-repellent. Under these circumstances, if an element or group that does not exhibit water repellency (for example, an element other than a fluorine element or a group that does not contain a fluorine element, especially atoms with an affinity for water such as oxygen or nitrogen) is bonded to the end of the polymer chain resulting from the cleavage of the polymer chain by the processing light EL, a technical problem arises in that the water repellency of the workpiece W may decrease.

[0071] Furthermore, polymer chains may be broken by factors other than the energy of the processing light EL (i.e., irradiation with the processing light EL), in addition to or instead of the energy of the processing light EL (i.e., irradiation with the processing light EL). As a first example, polymer chains may be broken due to the temperature of the space in which the workpiece W is placed during the removal process (so-called ambient temperature). Specifically, if the temperature of the space in which the workpiece W is placed during the removal process exceeds a certain temperature, the temperature of the workpiece W placed in that space will also rise, and as a result, polymer chains may be broken due to heat. As a second example, polymer chains may be broken due to the temperature of the stage 14 on which the workpiece W is placed during the removal process. Specifically, if the temperature of the stage 14 on which the workpiece W is placed exceeds a certain temperature during the removal process, the temperature of the workpiece W placed on the stage 14 will also rise, and as a result, polymer chains may be broken due to heat. In this case as well, as described above, when polymer chains are cut due to the energy of the processing light EL (i.e., irradiation with processing light EL), a technical challenge arises in that if elements or groups different from the original elements or groups constituting the polymer chain are newly bonded to the ends of the polymer chains, the properties of the workpiece W may change.

[0072] Therefore, in this embodiment, the processing system SYS performs processing operations to solve the above-mentioned technical problems. The processing operations performed by the processing system SYS to solve the above-mentioned technical problems will be further explained below. In particular, the processing operations performed by the processing system SYS to solve the technical problem of reduced water repellency of the workpiece W will be further explained below. (2-3) Processing operations to solve the technical problem of reduced water repellency of the workpiece W Next, with reference to Figure 8, the processing operations performed by the processing system SYS to solve the technical problem of reduced water repellency of the workpiece W will be explained. Figure 8 is a flowchart showing the flow of processing operations performed by the processing system SYS to solve the technical problem of reduced water repellency of the workpiece W.

[0073] As shown in Figure 8, the processing apparatus 1 irradiates the workpiece W with processing light EL from the processing head 12 (step S1). In other words, the processing apparatus 1 performs removal processing on the workpiece W by irradiating it with processing light EL from the processing head 12 (step S1). For example, as shown in Figure 9, which shows the processing head 12 that irradiates the workpiece W with processing light EL, the processing apparatus 1 may irradiate the first surface WS of the workpiece W with processing light EL from the processing head 12. As a result, removal processing is performed on the first surface WS of the workpiece W. In other words, the part to be removed RP is removed on the first surface WS of the workpiece W. As a result, the part to be processed PP is formed on the first surface WS of the workpiece W.

[0074] The processing apparatus 1 further exposes at least a portion of the workpiece W to a fluorine gas atmosphere using the gas supply device 16 (step S2). In particular, the processing apparatus 1 exposes at least the workpiece W's workpiece PP to a fluorine gas atmosphere using the gas supply device 16 (step S2). For example, if removal processing is performed on the first surface WS of the workpiece W as shown in Figure 9, the processing apparatus 1 may use the gas supply device 16 to expose at least a portion of the first surface WS of the workpiece W (in particular, at least the workpiece PP formed on the first surface WS) to a fluorine gas atmosphere.

[0075] To expose at least a portion of the workpiece W to a fluorine gas atmosphere, the processing apparatus 1 may supply a supply gas SG containing fluorine gas from a gas supply device 16, as shown in Figure 9. As a result, at least a portion of the workpiece W (for example, at least the workpiece W's workpiece PP) may be exposed to a fluorine gas atmosphere containing the supply gas SG supplied from the gas supply device 16.

[0076] The gas supply device 16 may supply supply gas SG to the processing space PS in which at least a portion of the workpiece W (for example, at least the workpiece W's work-worked portion PP) is located. As an example, the gas supply device 16 may be located in a non-processing space NPS different from the processing space PS in which at least a portion of the workpiece W (for example, at least the workpiece W's work-worked portion PP) is located, and the gas supply device 16 may supply supply gas SG from the non-processing space NPS to the processing space PS. As another example, the gas supply device 16 may be located in the processing space PS in which at least a portion of the workpiece W (for example, at least the workpiece W's work-worked portion PP) is located, and the gas supply device 16 may supply supply gas SG from the processing space PS to the processing space PS.

[0077] Figure 10A shows a first example of supplying a supply gas SG to a processing space PS. As shown in Figure 10A, the entire workpiece W may be housed in a storage space SP3 formed inside the housing 3 of the processing apparatus 1. In this case, the workpiece W's workpiece portion PP is also housed in the storage space SP3. The storage space SP3 becomes the processing space PS. On the other hand, the space outside the housing 3 becomes the non-processing space NPS. Figure 10A also shows an example in which, in addition to the workpiece W, a processing head 12 that irradiates the workpiece W with processing light EL and a stage 14 on which the workpiece W is placed are housed in the storage space SP3 of the housing 3. However, at least one of the processing head 12 and the stage 14 does not have to be housed in the storage space SP3 of the housing 3. In this case, the gas supply device 16 may supply the supply gas SG to the storage space SP3 via a gas supply port 31 formed in the housing 3 and a gas supply pipe 161 connecting the gas supply port 31 and the gas supply device 16. As a result, the atmosphere in the containment space SP3 becomes a fluorine gas atmosphere. Therefore, the workpiece W contained in the containment space SP3 is exposed to the fluorine gas atmosphere. In other words, the workpiece PP of the workpiece W contained in the containment space SP3 is exposed to the fluorine gas atmosphere.

[0078] Figure 10B shows a first example of supplying a supply gas SG to a processing space PS in which at least a portion of the workpiece W is located. As shown in Figure 10B, a portion of the workpiece W may be housed in a containment space SP4 formed inside the housing 4 of the processing apparatus 1. Figure 10B shows an example in which the housing 4 has a box shape and the housing 4 locally covers the surface of the workpiece W such that at least the workpiece W's In this case, the processing apparatus 1 may supply the supply gas SG to the containment space SP4 via a gas supply port 41 formed in the housing 4 and a gas supply pipe 161 connecting the gas supply port 41 and the gas supply device 16. As a result, the atmosphere in the containment space SP4 becomes a fluorine gas atmosphere. Therefore, the workpiece W contained in the containment space SP4 is exposed to the fluorine gas atmosphere.

[0079] In the example shown in Figure 10B, the head drive system 13 may move the housing 4 together with the processing head 12. For example, the housing 4 supports the processing head 12 via a support member 42 connecting the housing 4 and the processing head 12, and the head drive system 13 may move the housing 4 that supports the processing head 12. As a result, the processing head 12 supported by the housing 4 also moves along with the movement of the housing 4. In this case, the processing apparatus 1 may move the housing 4 so that it accommodates a first portion of the workpiece W, then irradiate the first portion of the workpiece W with processing light EL, and expose the processed first portion of the workpiece W (i.e., the workpiece PP) to a fluorine gas atmosphere. Subsequently, the processing apparatus 1 may move the housing 4 so that it accommodates a second portion of the workpiece W that is different from the first portion, then irradiate the second portion of the workpiece W with processing light EL, and expose the processed second portion of the workpiece W (i.e., the workpiece PP) to a fluorine gas atmosphere. As a result, even when the workpiece W is too large to be housed in the housing 3 shown in Figure 10A, the processing apparatus 1 can properly process the workpiece W and expose the processed portion of the workpiece W (PP) to a fluorine gas atmosphere.

[0080] The processing apparatus 1 may supply a supply gas SG to the processing space PS in which at least a portion of the workpiece W is located before irradiating at least a portion of the workpiece W with processing light EL. Specifically, the processing apparatus 1 may supply a supply gas SG to the processing space PS in which a portion of the workpiece W is located before irradiating a portion of the workpiece W with processing light EL. In other words, the processing apparatus 1 may expose a portion of the workpiece W to a fluorine gas atmosphere before irradiating a portion of the workpiece W with processing light EL. In this case, the processing apparatus 1 may irradiate a portion of the workpiece W with processing light EL while the portion of the workpiece W is exposed to the fluorine gas atmosphere. As a result, a portion of the workpiece W processed by processing light EL (i.e., a processed portion PP formed on a portion) is exposed to a fluorine gas atmosphere.

[0081] The processing apparatus 1 may supply supply gas SG to the processing space PS in which at least a portion of the workpiece W is located for at least a portion of the time during which the processing light EL is irradiated onto at least a portion of the workpiece W. Specifically, the processing apparatus 1 may supply supply gas SG to the processing space PS in which a portion of the workpiece W is located for at least a portion of the time during which the processing light EL is irradiated onto a portion of the workpiece W. In other words, the processing apparatus 1 may expose a portion of the workpiece W to a fluorine gas atmosphere for at least a portion of the time during which the processing light EL is irradiated onto a portion of the workpiece W. To put it another way, the processing apparatus 1 may supply supply gas SG to the space in which a portion of the workpiece W is located and irradiate a portion of the workpiece W with processing light EL in parallel. As a result, a portion of the workpiece W processed by the processing light EL (i.e., the processed part PP formed on a portion) is exposed to a fluorine gas atmosphere.

[0082] The processing apparatus 1 may, after irradiating at least a portion of the workpiece W with processing light EL, supply gas SG to the processing space PS in which at least a portion of the workpiece W is located. Specifically, the processing apparatus 1 may, after irradiating one part of the workpiece W with processing light EL, supply gas SG to the processing space PS in which one part of the workpiece W is located. In other words, the processing apparatus 1 may, after irradiating one part of the workpiece W with processing light EL, expose one part of the workpiece W to a fluorine gas atmosphere. As a result, one part of the workpiece W processed by the processing light EL (i.e., the processed part PP formed on one part) is exposed to a fluorine gas atmosphere.

[0083] As mentioned above, the polymer chains constituting the processed PP may be cut by irradiation with processing light EL. Therefore, exposing at least a portion of the workpiece W (especially the processed PP) to a fluorine gas atmosphere may include exposing the ends of polymer chains cut by irradiation with processing light EL to a fluorine gas atmosphere. Exposing at least a portion of the workpiece W (especially the processed PP) to a fluorine gas atmosphere may include exposing the ends of polymer chains cut by irradiation with processing light EL in the processed PP that has been processed by irradiation with processing light EL to a fluorine gas atmosphere.

[0084] Thus, when at least a portion of the workpiece W (particularly the workpiece PP) is exposed to a fluorine gas atmosphere, the fluorine gas contained in the fluorine gas atmosphere reacts with at least a portion of the workpiece W (particularly the workpiece PP). In this case, the reaction between the fluorine gas and at least a portion of the workpiece W (particularly the workpiece PP) may include the bonding of fluorine elements to the ends of polymer chains that have been cut by irradiation with processing light EL. For example, Figure 11A shows an example in which polymer chains constituting a workpiece W exposed to a fluorine gas atmosphere are cut by irradiation with processing light EL. Note that in Figure 11A, circles labeled "F" indicate fluorine gas (fluorine molecules or fluorine atoms). In this case, as shown in Figure 11A, fluorine gas is present near the ends of polymer chains that have been cut. Because fluorine gas is relatively more chemically reactive (in other words, relatively more reactive) than, for example, oxygen gas, the probability of fluorine elements constituting fluorine gas bonding to the ends of polymer chains formed by the severance of polymer chains is higher than the probability of other elements (for example, oxygen) bonding to the ends of polymer chains formed by the severance of polymer chains. Therefore, as shown in Figure 11B, there is a high probability that fluorine elements constituting fluorine gas will bond to the ends of polymer chains formed by the severance of polymer chains.

[0085] As a result, when a fluorine element is bonded to the end of a polymer chain, the likelihood of a decrease in the water repellency of the processed PP is lower compared to when an element other than fluorine (e.g., oxygen) is bonded to the end of a polymer chain. In other words, when at least a portion of the workpiece W (especially the processed PP) is exposed to a fluorine gas atmosphere, the likelihood of a decrease in the water repellency of the processed PP is lower compared to when at least a portion of the workpiece W (especially the processed PP) is not exposed to a fluorine gas atmosphere. To put it another way, when a fluorine element is bonded to the end of a polymer chain, the water repellency of the processed PP is improved compared to when an element other than fluorine (e.g., oxygen) is bonded to the end of a polymer chain. In other words, when at least a portion of the workpiece W (especially the processed PP) is exposed to a fluorine gas atmosphere, the water repellency of the processed PP is improved compared to when at least a portion of the workpiece W (especially the processed PP) is not exposed to a fluorine gas atmosphere. In other words, when at least a portion of the workpiece W (especially the processed PP portion) is exposed to a fluorine gas atmosphere, the water repellency of the processed PP portion is improved compared to when at least a portion of the workpiece W (especially the processed PP portion) is not exposed to a fluorine gas atmosphere. For example, as shown in Figure 9, when the first surface WS of the workpiece W is processed by processing light EL, the water repellency of the processed PP portion of the first surface WS when at least a portion of the workpiece W (especially the processed PP portion) is exposed to a fluorine gas atmosphere is improved compared to when at least a portion of the workpiece W (especially the processed PP portion) is not exposed to a fluorine gas atmosphere.

[0086] As a result, when a fluorine element is bonded to the end of a polymer chain, the likelihood of a decrease in the water repellency of the workpiece W is lower compared to when an element other than fluorine (e.g., oxygen) is bonded to the end of the polymer chain. In other words, when at least a portion of the workpiece W (especially the processed PP) is exposed to a fluorine gas atmosphere, the likelihood of a decrease in the water repellency of the workpiece W is lower compared to when at least a portion of the workpiece W (especially the processed PP) is not exposed to a fluorine gas atmosphere. To put it another way, when a fluorine element is bonded to the end of a polymer chain, the water repellency of the workpiece W is improved compared to when an element other than fluorine (e.g., oxygen) is bonded to the end of the polymer chain. In other words, when at least a portion of the workpiece W (especially the processed PP) is exposed to a fluorine gas atmosphere, the water repellency of the workpiece W is improved compared to when at least a portion of the workpiece W (especially the processed PP) is not exposed to a fluorine gas atmosphere. Therefore, the processing apparatus 1 can solve the technical problem of reduced water repellency of the workpiece W by exposing at least a portion of the workpiece W (especially the processed part PP) to a fluorine gas atmosphere.

[0087] In this embodiment, improved water repellency may mean an increase in the contact angle. In this case, when at least a portion of the workpiece W (especially the workpiece PP) is exposed to a fluorine gas atmosphere, the contact angle of the workpiece W becomes larger compared to when at least a portion of the workpiece W (especially the workpiece PP) is not exposed to a fluorine gas atmosphere.

[0088] Considering that at least a portion of the workpiece W (especially the workpiece PP) is exposed to a fluorine gas atmosphere and that the fluorine gas contained in the fluorine gas atmosphere reacts with at least a portion of the workpiece W (especially the workpiece PP), the characteristics of the processing space PS to which the supply gas SG is supplied (i.e., the processing space PS in which at least a portion of the workpiece W exists, which is the containment space SP3 shown in Figure 10A or the containment space SP4 shown in Figure 10B) may be set to a desired value that satisfies the condition that the fluorine gas contained in the fluorine gas atmosphere reacts with at least a portion of the workpiece W (especially the workpiece PP). For example, the control device 2 may set the characteristics of the processing space PS to a desired value. For example, the user of the processing system SYS may set the characteristics of the processing space PS to a desired value. Furthermore, since the atmosphere of the processing space PS becomes a fluorine gas atmosphere, the characteristics of the processing space PS may be considered equivalent to the characteristics of the fluorine gas atmosphere.

[0089] The characteristics of the machining space PS may include the atmospheric pressure of the machining space PS. In other words, the characteristics of the machining space PS may include the atmospheric pressure of the fluorine gas atmosphere. In this case, the atmospheric pressure of the machining space PS may be set to a desired atmospheric pressure that satisfies the condition that the fluorine gas contained in the fluorine gas atmosphere reacts with at least a part of the workpiece W (especially the workpiece PP).

[0090] The characteristics of the processing space PS may include the temperature of the processing space PS. In other words, the characteristics of the processing space PS may include the temperature of the fluorine gas atmosphere. In this case, the temperature of the processing space PS may be set to a desired temperature that satisfies the condition that the fluorine gas contained in the fluorine gas atmosphere reacts with at least a part of the workpiece W (especially the workpiece PP).

[0091] The characteristics of the processing space PS may include the humidity of the processing space PS. In other words, the characteristics of the processing space PS may include the humidity of the fluorine gas atmosphere. In this case, the atmospheric pressure of the processing space PS may be set to a desired humidity that satisfies the condition that the fluorine gas contained in the fluorine gas atmosphere reacts with at least a part of the workpiece W (especially the workpiece PP).

[0092] However, because fluorine gas is relatively highly reactive, even if the characteristics of the processing space PS are not adjusted, there is a high probability that the fluorine gas in the fluorine gas atmosphere will react with at least a portion of the workpiece W (especially the workpiece PP). For this reason, the characteristics of the processing space PS do not need to be adjusted. For example, the atmospheric pressure in the processing space PS may be the same as atmospheric pressure, higher than atmospheric pressure, or lower than atmospheric pressure.

[0093] Alternatively, because the reactivity of fluorine gas is relatively high, if the characteristics of the processing space PS are not adjusted, the fluorine gas contained in the fluorine gas atmosphere may react excessively with at least a portion of the workpiece W (especially the workpiece PP). For this reason, the characteristics of the processing space PS may be set to a desired value so that the fluorine gas does not react excessively with at least a portion of the workpiece W (especially the workpiece PP). The characteristics of the processing space PS may be set to a desired value so that the degree of reaction between the fluorine gas and at least a portion of the workpiece W (especially the workpiece PP) is at a desired level. In other words, by adjusting the characteristics of the processing space PS, the reaction between the fluorine gas and at least a portion of the workpiece W (especially the workpiece PP) may be limited (in other words, controlled or adjusted).

[0094] As an example, as shown in Figure 12, the processing apparatus 1 may be equipped with a temperature control device 5 capable of adjusting the temperature of the processing space PS (i.e., the temperature of the fluorine gas atmosphere). The temperature control device 5 may include a heating device (e.g., a heater) capable of heating the processing space PS. The temperature control device 5 may also include a cooling device (e.g., a water-cooled or air-cooled heat exchanger) capable of cooling the processing space PS. However, as the temperature of the processing space PS decreases, the reaction between the fluorine gas and at least a portion of the workpiece W (especially the workpiece PP) is further restricted. Therefore, the temperature control device 5 may restrict the reaction between the fluorine gas and at least a portion of the workpiece W (especially the workpiece PP) by cooling the processing space PS.

[0095] In addition to adjusting the temperature of the processing space PS, the temperature control device 5 may also be able to adjust the temperature of at least a portion of the workpiece W (especially the workpiece PP). In this case as well, the lower the temperature of at least a portion of the workpiece W (especially the workpiece PP), the more the reaction between the fluorine gas and at least a portion of the workpiece W (especially the workpiece PP) is restricted. Therefore, the temperature control device 5 may restrict the reaction between the fluorine gas and at least a portion of the workpiece W (especially the workpiece PP) by adjusting (for example, cooling) the temperature of at least a portion of the workpiece W (especially the workpiece PP).

[0096] Alternatively, in order to limit the reaction between the fluorine gas and at least a portion of the workpiece W (particularly the workpiece PP), in addition to or instead of adjusting at least one of the characteristics of the space to which the supply gas SG is supplied and the temperature of at least a portion of the workpiece W, a supply gas SG containing a different type of gas in addition to the fluorine gas may be used. In other words, in order to limit the reaction between the fluorine gas and at least a portion of the workpiece W (particularly the workpiece PP), the gas supply device 16 may supply a mixed gas containing the fluorine gas and a different type of gas as the supply gas SG. In other words, the gas supply device 16 may supply the fluorine gas and a different type of gas. An example of the other type of gas is CDA (Clean Dry Air). An example of the other type of gas is an inert gas. An example of an inert gas is argon gas.

[0097] In this case, the lower the concentration (in other words, the proportion or partial pressure) of fluorine gas contained in the supply gas SG, the lower the concentration of fluorine gas in the fluorine gas atmosphere formed by the supply gas SG. The lower the concentration of fluorine gas contained in the supply gas SG, the more the reaction between the fluorine gas and at least a portion of the workpiece W (especially the workpiece PP) is restricted. On the other hand, the higher the concentration of fluorine gas contained in the supply gas SG, the more the reaction between the fluorine gas and at least a portion of the workpiece W (especially the workpiece PP) is promoted. For this reason, the reaction between the fluorine gas and at least a portion of the workpiece W (especially the workpiece PP) may be restricted by adjusting the concentration of fluorine gas contained in the supply gas SG. For example, the control device 2 may restrict the reaction between the fluorine gas and at least a portion of the workpiece W (especially the workpiece PP) by adjusting the concentration of fluorine gas contained in the supply gas SG. For example, the user of the processing system SYS may restrict the reaction between the fluorine gas and at least a portion of the workpiece W (especially the workpiece PP) by adjusting the concentration of fluorine gas contained in the supply gas SG.

[0098] The processing apparatus 1 may adjust the concentration of fluorine gas contained in the supplied gas SG by adjusting the flow rate of fluorine gas supplied from the gas supply device 16. In addition to adjusting the flow rate of fluorine gas supplied from the gas supply device 16, or instead, the processing apparatus 1 may adjust the concentration of fluorine gas contained in the supplied gas SG by adjusting the flow rate of other types of gas supplied from the gas supply device 16.

[0099] The proportion of fluorine gas contained in the supply gas SG may be adjusted so that the concentration of fluorine gas in the fluorine gas atmosphere is less than or equal to the concentration of other types of gases in the fluorine gas atmosphere. For example, the concentration of fluorine gas contained in the supply gas SG may be adjusted so that the concentration of fluorine gas contained in the supply gas SG is less than or equal to the concentration of other types of gases contained in the supply gas SG. As a result, the likelihood of the concentration of fluorine gas in the fluorine gas atmosphere being less than or equal to the concentration of other types of gases in the fluorine gas atmosphere increases. In this way, when the likelihood of the concentration of fluorine gas in the fluorine gas atmosphere being less than or equal to the concentration of other types of gases in the fluorine gas atmosphere increases, the likelihood of the fluorine gas contained in the fluorine gas atmosphere reacting excessively with at least a part of the workpiece W (especially the workpiece PP) decreases compared to when the concentration of fluorine gas in the fluorine gas atmosphere is higher than the concentration of other types of gases in the fluorine gas atmosphere.

[0100] (3) Technical effects of the processing system SYS As described above, the processing apparatus 1 processes the workpiece W by irradiating it with processing light EL, and also exposes the processed part PP of the workpiece W to a fluorine gas atmosphere. As a result, as described above, the processing apparatus 1 can solve the technical problem of the water repellency of the workpiece W decreasing.

[0101] In addition, in this embodiment, in order to expose the workpiece W's workpiece PP to a fluorine gas atmosphere, relatively highly reactive elemental fluorine (chemical formula: F ２The supply gas SG, which contains the fluorine gas itself, is supplied to the processing space PS where at least a portion of the workpiece W is located. As a result, the fluorine gas supplied to the processing space PS reacts directly with the workpiece W's workpiece W's workpiece W's workpiece W's workpiece W's workpiece W's workpiece W's workpiece W's workpiece W's workpiece W's workpiece W's workpiece W's workpiece W's workpiece W's workpiece W's workpiece W's workpiece W's workpiece W's workpiece W's workpiece W's workpiece W's workpiece W's workpiece W's workpiece W's workpiece W's workpiece W's workpiece W's workpiece W's workpiece W's workpiece W's workpiece W's workpiece W's workpiece W's workpiece W's workpiece W's workpiece W's workpiece W's workpiece W's workpiece W's workpiece W's workpiece W's workpiece W workpiece W workpiece W workpiece W workpiece W workpiece W workpiece W workpiece W workpiece W workpiece W Therefore, in this embodiment, the degree of freedom in the characteristics of the processed photoelectroluminescent (EL) is improved compared to the case where the processed photoelectroluminescent (EL) needs to have properties for exciting fluorine gas (or fluorine-based gas).

[0102] As an example, in this embodiment, the processing light EL does not need to have an intensity strong enough to excite fluorine gas (or fluorine-based gas). Therefore, the processing light source 11 does not need to generate processing light EL with an intensity strong enough to excite fluorine gas (or fluorine-based gas). As a result, the cost and size of the processing light source 11 can be reduced.

[0103] As another example, the processing light EL does not need to have an intensity strong enough to excite fluorine gas (or fluorine-based gas). It is not necessary to use light (energy beam) with a relatively short wavelength as the processing light EL. In other words, it is possible to use light (energy beam) with a relatively long wavelength as the processing light EL. For example, it is possible to use light (energy beam) with a wavelength (e.g., peak wavelength) of 500 nm or more as the processing light EL. For example, it is possible to use light (energy beam) with a wavelength (e.g., peak wavelength) of 532 nm or 1076 nm as the processing light EL. In this case as well, the cost and size of the processing light source 11 can be reduced compared to the case where it is necessary to use light (energy beam) with a relatively short wavelength as the processing light EL. Furthermore, as the wavelength of the processing light EL increases, the size of the beam spot formed by the processing light EL on the surface of the workpiece W increases, thus improving the throughput of the removal process.

[0104] Furthermore, if it is necessary to excite fluorine gas (or a fluorine-based gas) in order to expose the workpiece W's

[0105] Furthermore, in this embodiment, as described above, the reaction between the fluorine gas and the workpiece PP of the workpiece W can be limited by adjusting the characteristics of the processing space PS, adjusting the temperature of the workpiece W, and / or using a mixed gas containing fluorine gas and another type of gas different from fluorine gas as the supply gas SG. In this case as well, the technical problem that the workpiece W may be thermally deformed due to excessive heat generated by excessive reaction of fluorine atoms can be solved.

[0106] Furthermore, in this embodiment, the processing apparatus 1 can bond fluorine elements to the ends of the polymer chains constituting the PP of the workpiece W by exposing the workpiece W to a fluorine gas atmosphere. Therefore, compared to the case where the surface of the PP of the workpiece W is simply fluorine-coated to ensure the water repellency of the workpiece W, the period during which the water repellency of the workpiece W can be maintained is extended. In other words, it is possible to extend the lifespan of the water repellency of the workpiece W.

[0107] (4) Modifications In the above description, the processing device 1 performs removal processing on the workpiece W. However, in addition to or instead of performing removal processing on the workpiece W, the processing device 1 may perform additive processing on the workpiece W. That is, the processing device 1 may perform additive processing to create an object on the workpiece W. In this case, the processing device 1 may be considered capable of functioning as a 3D printer. As a method for performing additive processing, powder bed fusion may be used, or laser metal deposition (LMD) or Directed Energy deposition (DED) may be used.

[0108] In addition to or instead of performing at least one of removal processing and addition processing on the workpiece W, the processing apparatus 1 may perform a melting process that melts the surface of the workpiece W and solidifies the melted surface. The melting process may also be called a remelt process. By performing the melting process, the processing apparatus 1 may also perform planar processing to bring the surface of the workpiece W closer to a flat surface compared to before the melting process was performed.

[0109] Even when the processing apparatus 1 performs at least one of additive processing and melting processing, the workpiece W is irradiated with processing light EL, just as when the processing apparatus 1 performs removal processing. Therefore, even when the processing apparatus 1 performs at least one of additive processing and melting processing, there is a possibility that the polymer chains constituting the workpiece W may be cut. As a result, even when the processing apparatus 1 performs at least one of additive processing and melting processing, there is a possibility that the properties of the workpiece W, which is composed of a material containing polymer chains, may change. For example, there is a possibility that the water repellency of the workpiece W may decrease. For this reason, even when the processing apparatus 1 performs at least one of additive processing and melting processing, the processing apparatus 1 may expose at least a part of the workpiece W (in particular, the part of the workpiece W that has undergone at least one of additive processing and melting processing) to a fluorine gas atmosphere, just as when the processing apparatus 1 performs removal processing. As a result, even when the processing apparatus 1 performs at least one of additive processing and melting processing, the above-mentioned technical effects can be enjoyed, just as when the processing apparatus 1 performs removal processing.

[0110] In the above description, the processing system SYS processes the workpiece W by irradiating it with processing light EL. In other words, the processing system SYS processes the workpiece W by irradiating it with an energy beam in the form of light. However, the processing system SYS may also process the workpiece W by irradiating it with any energy beam other than light. An example of any energy beam is at least one of a charged particle beam and an electromagnetic wave. An example of a charged particle beam is at least one of an electron beam and an ion beam. Furthermore, in the above description, the processing system SYS processes the workpiece W by irradiating it with measurement light ML. However, the processing system SYS may also measure the workpiece W by irradiating it with any energy beam other than light.

[0111] In the above explanation, workpiece W was a material containing polymer chains. However, the material of workpiece W may be, for example, a metal, an alloy (e.g., duralumin), a semiconductor (e.g., silicon), a resin, a composite material such as CFRP (Carbon Fiber Reinforced Plastic), glass, a ceramic, or an object composed of any other material. Examples of any material include at least one of gypsum, rubber such as polyurethane, and elastomers.

[0112] When the workpiece W is a coating formed on a substrate BM, the material of the substrate BM may be, for example, a metal, an alloy (e.g., duralumin), a semiconductor (e.g., silicon), a resin, a composite material such as CFRP (Carbon Fiber Reinforced Plastic), glass, a ceramic, or an object made of any other material. Examples of any material include at least one of gypsum, rubber such as polyurethane, and elastomer.

[0113] At least some of the constituent elements of each embodiment described above can be appropriately combined with at least some other constituent elements of each embodiment described above. Some of the constituent elements of each embodiment described above may not be used. Furthermore, to the extent permitted by law, all of the published patents and U.S. patent disclosures cited in each embodiment described above shall be incorporated into the text.

[0114] The present invention is not limited to the embodiments described above, and can be modified as appropriate without contradicting the gist or idea of ​​the invention as can be read from the claims and specification as a whole. Processing methods and processing systems involving such modifications are also included within the technical scope of the present invention.

[0115] SYS Machining System 1 Machining device 12 Machining head 121 Machining optical system 16 Gas supply device 2 Control device

Claims

1. A processing method for removing at least a portion of an object made of a material containing polymer chains, comprising: irradiating the object with a processing beam; and exposing the processed portion of the object, which has been processed by irradiation with the processing beam, to a fluorine gas atmosphere.

2. The processing method according to claim 1, wherein exposing the workpiece to the fluorine gas atmosphere includes exposing the ends of the polymer chains in the workpiece to the fluorine gas atmosphere.

3. The processing method according to claim 2, wherein exposing the workpiece to the fluorine gas atmosphere includes exposing the ends of the polymer chains cut by the processing beam in the workpiece to the fluorine gas atmosphere.

4. The processing method according to claim 2 or 3, wherein exposing the workpiece to the fluorine gas atmosphere causes fluorine to bond to the ends of the polymer chains in the workpiece.

5. The processing method according to any one of claims 1 to 4, wherein irradiating the object with the processing beam includes irradiating the first surface of the object with the processing beam, and the workpiece is formed on the first surface.

6. The processing method according to any one of claims 1 to 5, wherein the processing part is exposed to the fluorine gas atmosphere such that the water repellency of the processing part when exposed to the fluorine gas atmosphere is improved compared to the water repellency of the processing part when not exposed to the fluorine gas atmosphere.

7. The processing method according to any one of claims 1 to 6, wherein irradiating the object with the processing beam includes irradiating the first surface of the object with the processing beam, and exposing the workpiece to the fluorine gas atmosphere includes exposing the workpiece to the fluorine gas atmosphere such that the water repellency of the workpiece on the first surface when the workpiece is exposed to the fluorine gas atmosphere is improved compared to the water repellency of the workpiece on the first surface when the workpiece is not exposed to the fluorine gas atmosphere.

8. The processing method according to any one of claims 1 to 7, wherein irradiating the object with the processing beam includes irradiating the object with the processing beam without exciting the fluorine gas contained in the fluorine gas atmosphere.

9. The processing method according to any one of claims 1 to 8, wherein the processing beam has properties different from those that excite the fluorine gas contained in the fluorine gas atmosphere.

10. The processing method according to claim 9, wherein the characteristics include at least one of wavelength and intensity.

11. The processing method according to any one of claims 1 to 10, wherein the wavelength of the processing beam is 500 nm or more.

12. The processing method according to any one of claims 1 to 11, wherein at least a portion of the object including the workpiece is housed in a first space formed inside a first housing, and exposing the workpiece to the fluorine gas atmosphere includes supplying fluorine gas to the first space.

13. The processing method according to claim 12, wherein the object is housed in a first space formed inside the first housing.

14. The processing method according to any one of claims 1 to 13, wherein the exposure of the workpiece to the fluorine gas atmosphere is provided before the processing beam is irradiated onto the workpiece.

15. The processing method according to any one of claims 1 to 14, wherein the processing part is exposed to the fluorine gas atmosphere for at least a portion of the period during which the processing beam is irradiated onto the processing part.

16. The processing method according to any one of claims 1 to 15, wherein the exposure of the workpiece to the fluorine gas atmosphere comprises exposing the workpiece to the fluorine gas atmosphere containing fluorine gas and other gases different from fluorine gas.

17. The processing method according to claim 16, wherein the concentration of the fluorine gas in the fluorine gas atmosphere is less than or equal to the concentration of the other gases.

18. The processing method according to claim 16 or 17, wherein the other gas includes an inert gas.

19. The processing method according to any one of claims 1 to 18, comprising adjusting the temperature of the fluorine gas atmosphere and at least one of the parts to be processed.

20. The processing method according to claim 19, wherein adjusting the temperature of the fluorine gas atmosphere and at least one of the workpieces includes cooling the fluorine gas atmosphere and at least one of the workpieces.

21. The processing method according to any one of claims 1 to 20, wherein the object comprises at least one of a film containing polymer chains, a resin, a paint, and a rubber.

22. The processing method according to any one of claims 1 to 21, wherein the object is made of a material comprising at least one of a carbon-based polymer chain having carbon as its main structure and a silicon-based polymer chain having silicon as its main structure.

23. The processing method according to any one of claims 1 to 22, wherein irradiating the object with the processing beam includes irradiating a part of the object with the processing beam to form a plurality of groove structures in the object.

24. The processing method according to any one of claims 1 to 23, wherein irradiating the object with the processing beam is to form a riblet structure on the object by irradiating the object with the processing beam.

25. The processing method according to any one of claims 1 to 24, wherein the object constitutes the surface of a moving body moving in a fluid.

26. A processing apparatus for removing at least a portion of an object, comprising: a beam irradiation device for irradiating the object with a processing beam; and a gas supply device for exposing the processed portion of the object that has been processed by irradiation with the processing beam to a fluorine gas atmosphere.

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