Substrate treatment apparatus

Abstract

The present invention relates to a substrate treatment apparatus, more specifically, to a substrate treatment apparatus for plasma etching a substrate. The present invention relates to a substrate treatment apparatus comprising: a process chamber (100) forming a treatment space (S) therein; a substrate support unit (200) installed in the process chamber (100) to support a substrate (10) in the treatment space (S); a gas injection unit (300) for injecting etching gas into the treatment space (S); a plasma power supply unit (500) for forming a plasma atmosphere in the treatment space (S); and a collection plate unit (600) installed above the substrate support unit (200) to collect particles etched using the etching gas.

Description

Substrate processing device

[0001] The present invention relates to a substrate processing apparatus, and more specifically, to a substrate processing apparatus that performs plasma etching on a substrate.

[0002] Recently, research on copper (Cu) wiring has been actively underway as a technology that can maintain high performance while reducing line width and thickness by lowering the resistance of wiring formed on thin films.

[0003] More specifically, in the case of wiring using copper (Cu), compared to conventional aluminum (Al), it has lower resistance and higher conductivity, resulting in less power loss and enabling the production of high-efficiency products. Additionally, it has the advantage of excellent durability due to enhanced contact stability caused by high heat resistance and corrosion resistance.

[0004] Accordingly, in line with the recent technological trend of increasingly finer line widths, it is possible to implement low-power, high-performance wiring using copper (Cu) while reducing the line width and thickness, while maintaining a level of performance equivalent to or superior to conventional aluminum (Al) wiring.

[0005] However, in order to implement copper (Cu) wiring, a copper (Cu) thin film must be etched according to a preset pattern. Conventionally, dry etching using halogen elements such as fluorine (F) and chlorine (Cl) was performed, but there is a problem in that the etched copper (Cu) is redeposited within the processing space, making it difficult to discharge in the form of gas, and dry etching is impossible due to residual particles.

[0006] Accordingly, dry etching could not be performed and patterning was performed through wet etching, but in the case of wet etching, it is difficult to achieve fine line widths, and there are problems with high costs due to the use of expensive etchant and treatment costs resulting from wastewater generation.

[0007] The objective of the present invention is to provide a substrate processing apparatus for performing plasma dry etching on a copper (Cu) thin film in order to solve the above-mentioned problems.

[0008] The present invention is created to achieve the above-mentioned purpose of the present invention, and the present invention discloses a substrate processing device comprising: a process chamber (100) forming a processing space (S) inside; a substrate support member (200) installed in the process chamber (100) to support a substrate (10) in the processing space (S); a gas injection member (300) to inject etching gas into the processing space (S); a plasma power supply member (500) to form a plasma atmosphere in the processing space (S); and a collection plate member (600) installed above the substrate support member (200) to collect particles etched through the etching gas.

[0009] The above-mentioned collection plate portion (600) may include at least one of ceramic and metal.

[0010] The above-mentioned collection plate portion (600) may include at least one of copper (Cu) and silver (Ag).

[0011] The above-mentioned collection plate portion (600) may include the same material as the thin film of the substrate (10) to be etched.

[0012] The above plasma power supply unit (500) may include an antenna unit (510) that is provided on the upper side of the window assembly (400) to form an induced electric field in the processing space (S), and an RF power supply (520) that applies RF power to the antenna unit (510), and may include a window assembly (400) that is installed in an opening (101) formed on the upper side of the process chamber (100) and has a window (410) that transmits the induced electric field formed through the plasma power supply unit (500).

[0013] The above window assembly (400) may additionally include a protective plate (420) provided at the bottom of the window (410).

[0014] The above-mentioned collection plate portion (600) may have a plurality of slits (601) formed therein that penetrate in the vertical direction.

[0015] The above-mentioned slit (601) may be additionally covered by a cover portion (700) provided on the collection plate portion (600).

[0016] The above cover portion (700) may be formed of a material different from that of the above collection plate portion (600).

[0017] The above-mentioned collection plate portion (600) is made of metal, and the above-mentioned cover portion (700) may be composed of a material that allows the induced electric field to pass through.

[0018] The above-mentioned collection plate portion (600) may have the longitudinal direction of the slit (601) on a plane parallel to the longitudinal direction of the antenna portion (510).

[0019] The above-mentioned collection plate portion (600) may have the longitudinal direction of the slit (601) intersecting the longitudinal direction of the antenna portion (510) in a planar plane.

[0020] The above-mentioned collection plate portion (600) may include a collection plate (610) installed horizontally and an extension portion (620) formed extending downward from the edge of the collection plate (610).

[0021] The above extension (620) may be formed in a tapered shape in which the thickness decreases as it goes downward.

[0022] The above extension (620) can be extended stepwise or gradually toward the edge as the inner surface (621) moves downward.

[0023] The above-mentioned collection plate portion (600) is arranged to overlap with the substrate (10) on a plane and may have a planar area larger than that of the substrate (10).

[0024] The above-mentioned collection plate portion (600) may be in an electrically floating state.

[0025] The process chamber (100) comprises a chamber body (110) in which the opening (101) is formed, and a lead frame (120) installed at the edge of the opening (101). The window assembly (400) may further include a cover plate (430) installed on the bottom surface of the lead frame (120) to electrically insulate the collection plate portion (600) positioned at the bottom from the lead frame (120).

[0026] The above protective plate (420) can be formed of a flexible material.

[0027] The above protective plate (420) may be made of PTFE (Polytetrafluoroethylene).

[0028] The above window assembly (400) may further include a window frame (440) that is installed in the opening (101) and supports the windows (410) by forming a plurality of divided openings for installing a plurality of the windows (410).

[0029] The above-mentioned collection plate portion (600) is provided in a single portion at the bottom of the window assembly (400) and can cover a plurality of the above-mentioned windows (410).

[0030] The above window (410) may be a genome.

[0031] It may additionally include an exhaust trap section (800) that is provided within the processing space (S) to communicate with the exhaust port formed in the chamber body (110), forms at least a part of the exhaust path, and collects particles in the exhaust gas being exhausted.

[0032] The above substrate support (200) may include an electrode (210) that is connected to a bias power source (230) and receives bias power.

[0033] The above gas injection unit (300) can inject the etching gas supplied from the outside through the collection plate (600) into the processing space (S).

[0034] The above gas injection unit (300) can be installed by penetrating the above collection plate (600) and connecting it to the bottom surface of the above window assembly (400).

[0035] The substrate processing device according to the present invention has the advantage of being able to form a pattern by performing plasma dry etching on a thin film and discharging the etched particles through the collection of the etched particles.

[0036] Through this, the substrate processing device according to the present invention has the advantage of enabling the production of products with enhanced low power consumption, high efficiency, and durability even at finer line widths and thicknesses compared to conventional Al wiring by applying Cu wiring.

[0037] In addition, the substrate processing apparatus according to the present invention has the advantage of increasing the efficiency of substrate processing by overcoming the difficulty of implementing fine line widths due to conventional wet etching and reducing related environmental costs.

[0038] In addition, the substrate processing device according to the present invention has the advantage of being able to prevent the influence of the electromagnetic field for forming a plasma atmosphere, even though a collection plate is installed for collecting etched particles.

[0039] FIG. 1 is a cross-sectional view showing a substrate processing apparatus according to the present invention.

[0040] FIG. 2 is a cross-sectional view showing the appearance of the collection plate portion of the substrate processing device according to FIG. 1.

[0041] FIG. 3 is a cross-sectional view showing the appearance of the gas injection section of the substrate processing device according to FIG. 1.

[0042] Figure 4 is a drawing showing the edge side of the collection plate portion of the substrate processing device according to Figure 1.

[0043] FIG. 5 is a cross-sectional view showing the edge side of the collection plate portion of the substrate processing device according to FIG. 1.

[0044] FIG. 6 is a diagram showing the relationship between the antenna section and the collection plate section of one embodiment of the substrate processing apparatus according to FIG. 1.

[0045] FIG. 7 is a diagram showing the relationship between the antenna section and the collection plate section of another embodiment of the substrate processing apparatus according to FIG. 1.

[0046] Hereinafter, a substrate processing apparatus according to the present invention will be described with reference to the attached drawings.

[0047] A substrate processing device according to the present invention comprises, as shown in FIG. 1, a process chamber (100) that forms a processing space (S) inside; a substrate support member (200) installed in the process chamber (100) to support a substrate (10) in the processing space (S); a gas injection member (300) that sprays etching gas into the processing space (S); a plasma power supply member (500) that forms a plasma atmosphere in the processing space (S); and a collection plate member (600) installed above the substrate support member (200) to collect particles etched through the etching gas.

[0048] Additionally, the substrate processing device according to the present invention may include a window assembly (400) installed in an opening (101) formed at the top of a process chamber (100) and equipped with a window (410) that transmits the induced electric field formed through the plasma power supply (500).

[0049] In addition, the substrate processing device according to the present invention may further include an exhaust trap (800) that is provided within a processing space (S) to communicate with an exhaust port formed in the chamber body (110), forms at least a part of the exhaust path, and collects particles in the exhaust gas being exhausted.

[0050] Here, the substrate (10) as the target for processing according to the present invention is configured to perform substrate processing such as etching, and any substrate such as a semiconductor manufacturing substrate, an LCD manufacturing substrate, an OLED manufacturing substrate, a solar cell manufacturing substrate, or a transparent glass substrate can be applied.

[0051] For example, the substrate (10) may be configured such that a thin film containing copper (Cu) is formed so that wiring through copper (Cu) is formed in the lower layer.

[0052] That is, the substrate (10) can be formed through a conductive material such as metal as a conductive layer for forming wiring, and can be formed of copper (Cu) for the formation of a fine pattern and low resistance characteristics.

[0053] Meanwhile, the substrate processing apparatus according to the present invention can pattern a thin film containing Cu through plasma dry etching using an etching gas, and as an etching gas for this purpose, an inert gas may be used, and for example, at least one of Ar, He, Kr, and Xe may be included.

[0054] In the following description, the thin film formed on the substrate (10) is described as an example of copper (Cu), but it is not limited thereto, and can be similarly applied to materials such as silver (Ag) in which gas can be emitted only under high-temperature conditions during etching and re-deposition and solidification are relatively easy.

[0055] The above process chamber (100) is configured to form a processing space (S) inside, and various configurations are possible.

[0056] For example, the process chamber (100) may include a chamber body (110) having an opening (101) formed on the upper side, and a lead frame (120) installed at the edge of the opening (101).

[0057] Additionally, the process chamber (100) may include a cover member (130) installed on a lead frame (120) to form a space for installing an antenna part (510) to be described later inside.

[0058] The above chamber body (110) is configured such that an opening (101) is formed on the upper side, and various configurations are possible.

[0059] At this time, the chamber body (110) may be configured in a rectangular shape as a planar shape corresponding to the shape of the substrate (10) to be processed, as a configuration for forming a processing space (S).

[0060] Additionally, the chamber body (110) may have one or more gates (102) formed therein for the input and output of a substrate (10), and may have a pressure control unit, a vacuum pump (not shown), and an exhaust pipe (not shown) connected thereto formed therein to control the pressure of the processing space (S) and remove by-products, as described later.

[0061] The above chamber body (110) may have an opening (101) with an open top, and a window assembly (400) described later may be supported and installed on the lead frame (120) with a lead frame (120) installed at the edge of the opening (101) to form a sealed processing space (S). As another example, the lead frame (120) may be omitted and the opening (101) may be covered through the window assembly (400).

[0062] The lead frame (120) can be configured in various ways to support the window assembly (400) by being installed along the edge of the opening (101).

[0063] For example, the lead frame (120) is installed at the edge of the opening (101) and has a rectangular planar shape corresponding to the window assembly (400) described later, and has a step formed on its inner surface to support the window assembly (400).

[0064] The above cover member (130) may be configured to be installed on the lead frame (120) to form a space in which the antenna part (510) described later is installed, and more specifically, may be arranged to cover the lead frame (120).

[0065] The above substrate support member (200) is configured to be installed in a process chamber (100) and to support a substrate (10) in a processing space (S), and various configurations are possible.

[0066] For example, the substrate support member (200) may include a support plate (220) for supporting a substrate (10) as shown in FIG. 1, and an electrode (210) provided within the support plate (220) to which bias power is applied as RF power received from an external bias power source (230).

[0067] That is, the substrate support (200) can apply bias power to the electrode (210) to control energy transfer and acceleration of plasma particles formed in the processing space (S) through the plasma power supply (500) described later.

[0068] For example, the substrate support member (200) may be configured to support the substrate (10) and have a heater inside to form a temperature atmosphere for the substrate (10) and the processing space (S), and furthermore, may be configured as an electrostatic chuck in which chucking is performed on the substrate (10) to fix and support the substrate (10) in a fixed position.

[0069] In this case, the electrode (210) can function as a bias electrode by applying bias power as an electrostatic electrode.

[0070] Meanwhile, it is also obvious that the electrode (210) and the bias power supply (230) may be omitted, unlike what was previously described.

[0071] Additionally, the substrate support member (200) is equipped with a heater (not shown) inside so that the temperature of the substrate (10) to be processed and the processing space (S) can be controlled to an appropriate atmosphere for the process, thereby maintaining the temperature of the processing space (S) at 20°C or higher and 120°C or lower, and the temperature of the electrostatic chuck as the substrate support member (200) controlling the temperature atmosphere of the processing space (S) is maintained at -30°C or higher and 20°C or lower, so that even at a relatively low temperature, etching of copper (Cu) and discharge of etched particles can be made possible through the plasma power supply member (500) and the collection plate member (600).

[0072] The above gas injection unit (300) is configured to inject etching gas into a processing space (S), and various configurations are possible.

[0073] In particular, the gas injection unit (300) can inject etching gas supplied from the outside into the processing space (S) by penetrating the collection plate (600), and in this case, the gas injection unit (300) can be installed by penetrating the collection plate (600) and being coupled to the bottom surface of the window assembly (400).

[0074] More specifically, the gas injection unit (300) includes a gas nozzle (320) having an injection port (321) formed therein, and by fastening the gas nozzle (320) to the bottom surface of the window frame (440) of the window assembly (400) using a fastening means such as a bolt, the etching gas transmitted through the window frame (440) can be injected into the processing space (S).

[0075] At this time, the gas nozzle (320) can be installed by penetrating the cover plate (430) and the collection plate (600) positioned at the bottom of the window frame (440).

[0076] Meanwhile, as an example, the gas injection unit (300) may additionally include a gas inlet pipe (310) installed on the upper surface of the window assembly (400) to communicate with the gas nozzle (320) and receiving etching gas from the outside and transmitting it to the gas nozzle (320), and the gas inlet pipe (310) may be installed through the window frame (440) and connected to the gas nozzle (320).

[0077] At this time, as another example, the gas inlet pipe (310) may be coupled to the upper surface of a window frame (440) in which a through hole is formed to deliver etching gas, as shown in FIG. 3, and may deliver etching gas by communicating with a gas nozzle (320) through the through hole.

[0078] Meanwhile, as another example, the gas injection unit (300) may be applied as a shower head configuration installed on a lead frame (120) to cover the opening (101) in the case of a capacitively coupled plasma (CCP) method, unlike the inductively coupled plasma (ICP) method described above.

[0079] Meanwhile, the substrate processing device according to the present invention may include a pressure control unit for controlling the pressure of the processing space (S), and the pressure control unit may include a vacuum pump and various valve configurations connected to the exhaust port of the gas injection unit (300) and the process chamber (100) to control the amount of exhaust.

[0080] That is, the pressure control unit can control the pressure of the processing space (S) by appropriately adjusting the flow rate of the gas supplied through the gas injection unit (300), or by controlling the pressure of the processing space (S) by adjusting the exhaust amount through the vacuum pump and valve, or by a combination of these.

[0081] The above window assembly (400) may be configured to be installed in an opening (101) formed at the top of a process chamber (100) and to have at least one window (410) and a protective plate (420) provided at the bottom of the window (410).

[0082] Additionally, the window assembly (400) may further include a window frame (440) that supports the windows (410) by forming a plurality of divided openings for installing a plurality of windows (410) in the opening (101).

[0083] The above window frame (440) is a configuration that supports the window (410), and may have sufficient rigidity and may have a gas flow path formed inside to enable the delivery of etching gas delivered through the gas injection unit (300), or may be a configuration in which the gas injection unit (300) is installed through it.

[0084] For example, the window frame (440) may be composed of metal, and may have installation openings in a grid structure, and may be composed of aluminum, aluminum alloy, etc.

[0085] At this time, the window frame (440) may include an outer frame positioned on the lead frame (120) and a cross frame installed across the outer frame to form a plurality of openings, and as another example, the outer frame may be omitted and the cross frame installed across the lead frame (120) to form a plurality of openings together with the lead frame (120).

[0086] The above window (410) may be configured to transmit and control an induced electric field formed through an antenna part (510) that is installed in an installation opening formed through a window frame (440).

[0087] For example, the above window (410) may be a dielectric window represented by ceramic, a metal window, etc., and may be equipped with a separate heater or a gas injection unit (300) at the bottom to deliver etching gas.

[0088] The above protective plate (420) may be configured to be provided at the bottom of the window (410) to prevent damage to the window (410) caused by the reverse flow of high-energy plasma.

[0089] That is, the above protective plate (420) may be configured to prevent damage to the lower part of the window (410) and contamination of the window (410) caused by plasma, unlike the collection plate (600) which collects etched particles, for example, copper (Cu).

[0090] Meanwhile, the above protective plate (420) may be composed of a ceramic or plastic material and may be composed of a material that can be stretched in response to thermal deformation, considering that it is positioned between the collection plate (600) and the window (410), while performing the function of preventing damage caused by reverse plasma as the collection plate portion (600) described later is placed at the bottom.

[0091] That is, the above protective plate (420) can be applied as a flexible material and an easy-to-process material to correspond to the different thermal deformation of the window (410) and the collection plate part (600), which are composed of different materials of ceramic and metal as dielectrics for the limited installation space and the upper and lower parts, respectively.

[0092] To this end, the protective plate (420) may be formed of PTFE (Polytetrafluoroethylene).

[0093] Additionally, the protective plate (420) may be positioned so as to be in close contact with the bottom surface of the window (410) at the bottom of the window (410) with a size corresponding to the window (410), or may be provided with a size corresponding to the multiple windows (410) to cover the entire plurality of windows (410).

[0094] Meanwhile, the above protective plate (420) may be positioned at a certain distance downward from the window (410).

[0095] The above cover plate (430) is configured to support the protection plate (420) by being positioned below the lead frame (120) and the window frame (440), and various configurations are possible.

[0096] That is, the cover plate (430) can be positioned below the lead frame (120) and the window frame (440) and installed along the bottom edge of the opening for the aforementioned window (410) to be installed, thereby supporting the protective plate (420) installed in the opening.

[0097] In addition, the cover plate (430) is formed of ceramic and can prevent damage to the lower part of the metal lead frame (120) and window frame (440) caused by plasma formed in the processing space (S).

[0098] Additionally, the cover plate (430) can electrically insulate the chamber body (110) and lead frame (120), which are in a grounded state, from the collection plate part (600), which maintains a floating state, so that the collection plate part (600) maintains an electrically floating state.

[0099] In this case, the cover plate (430), together with the extension part (620) protruding downward from the edge of the aforementioned collection plate part (600), can prevent the metal particles, for example, copper (Cu), collected in the collection plate part (600) from being electrically connected to the grounded lead frame (120) and the collection plate part (600), or from being affected by the electromagnetic field formed through the Dan Godeer plasma power supply part (500).

[0100] The above plasma power supply unit (500) is configured to form a plasma atmosphere in a processing space (S), and various configurations are possible.

[0101] For example, the plasma power supply unit (500) may include an antenna unit (510) that is provided on the upper side of the window assembly (400) and forms an induced electric field in the processing space (S), and an RF power supply (520) that applies RF power to the antenna unit (510).

[0102] The antenna section (510) is configured such that high-frequency RF power is applied to form an induced electric field in the processing space (S), and can be arranged in a preset pattern on the upper side of the window assembly (400).

[0103] The above RF power supply (520) is electrically connected to the antenna unit (510) to supply high-frequency power, thereby enabling the formation and control of an induced electric field through the antenna unit (510).

[0104] Meanwhile, as described above, the plasma power supply unit (500) may use an inductively coupled plasma (ICP) method as a method for forming plasma, but is not limited thereto, and may also form a plasma atmosphere in the processing space (S) by applying an RF power or a DC power to the CCP electrode in the gas injection unit (300) as a capacitively coupled plasma (CCP) method.

[0105] In this case, some of the configurations of the aforementioned window assembly (400) may be omitted, and only the configuration of the protective plate (420) between the gas injection part (300) and the collection plate part (600) may be applied.

[0106] The above-mentioned collection plate portion (600) is configured to be installed on the upper side of the substrate support portion (200) to collect particles etched by etching gas, and various configurations are possible.

[0107] That is, the above-mentioned collection plate portion (600) may be configured to be provided on the upper side of the substrate support portion (200) to collect particles, such as copper (Cu), that have been etched through an etching gas that is difficult to discharge in the form of gas and active to be redeposited within the processing space (S).

[0108] For example, the above-mentioned collection plate portion (600) may be composed of a metal material to facilitate collection of metal, for example, copper (Cu), and may include copper (Cu).

[0109] In addition, as another example, the collection plate portion (600) may be composed of a ceramic material, and as another example, may be composed of a metal material including silver (Ag).

[0110] That is, the above-mentioned collection plate portion (600) is formed with the same material as the thin film (10) as the etching target of the substrate (10), thereby making it easy to collect particles that need to be etched and discharged. Accordingly, for example, when etching is performed on a copper (Cu) thin film, it may be formed with a material containing copper (Cu), and when etching is performed on a silver (Ag) thin film, it may be formed with a material containing silver (Ag).

[0111] Additionally, the above-mentioned collection plate portion (600) is positioned to overlap with the substrate (10) on a planar surface to easily collect particles etched and emitted from the substrate (10), and may be positioned to have a planar area larger than that of the substrate (10).

[0112] That is, the edge of the above-mentioned collection plate portion (600) may be located outside the edge of the planar substrate (10), and furthermore, may be located at the same or outside the edge of the substrate support portion (200).

[0113] Additionally, the above-mentioned collection plate portion (600) may be configured to be provided in a single portion at the bottom of the window assembly (400) to cover a plurality of windows (410), and as another example, it may be divided into a plurality of portions corresponding to a plurality of windows (410) and a protection plate (420).

[0114] Meanwhile, the above-mentioned collection plate portion (600) may be provided in contact with the bottom surface of the protection plate (420), and as another example, it may be arranged at a certain distance below the protection plate (420), and a cover plate (430) may be placed between the window frame (440) and the lead frame (120) for electrical insulation.

[0115] That is, the above-mentioned collection plate portion (600) can be installed by being fastened to a cover plate (430), which is an insulating material provided at the bottom of the lead frame (120) and the window frame (440), using a fastening means such as a bolt, and accordingly, it can be installed while being electrically insulated from the lead frame (120) and the window frame (440).

[0116] In addition, the above-mentioned collection plate (600) may maintain an electrically floating state to minimize the influence of the electromagnetic field formed through the plasma power supply (500), and the floating state may mean a state in which no artificial potential is set.

[0117] Meanwhile, the above-mentioned collection plate portion (600) may have a plurality of slits (601) formed that penetrate in the vertical direction to prevent complete shielding of the electromagnetic field formed through the plasma power supply portion (500) and to enable the transmission of the induced electric field to the processing space (S).

[0118] At this time, the slit (601) can be formed such that the longitudinal direction of the slit (601) on the plane is parallel to the longitudinal direction of the antenna part (510), as shown in FIG. 6.

[0119] That is, the slit (601) may be an elliptical shape having a major axis and a minor axis, and may be positioned parallel to the longitudinal direction of the antenna part (501) at a position where the major axis overlaps with the antenna part (510) in a plane.

[0120] In addition, as another example, the slit (601) may be formed such that the longitudinal direction of the slit (601) intersects the longitudinal direction of the antenna part (510) in a planar manner, as shown in FIG. 7.

[0121] That is, the slit (601) may be an elliptical shape having a major axis and a minor axis, and may be positioned parallel to the longitudinal direction of the antenna part (501) at a position where the major axis overlaps with the antenna part (510) in a plane.

[0122] Thus, the induced electric field can be strengthened or canceled according to the relationship between the dielectric cover portion (700) provided in the collection plate portion (600) to cover the slit (601) and the antenna portion (510).

[0123] The above cover portion (700) is configured to be provided on the collection plate portion (600) to cover the slit (601), and various configurations are possible.

[0124] For example, the cover portion (700) may be provided to be inserted into the slit (601) to close the slit (601), or to cover the slit (601) on at least one of the upper and lower sides of the collection plate portion (600).

[0125] At this time, the cover portion (700) may be formed of a material different from that of the collection plate portion (600), and, for example, may be composed of a material that allows the induced electric field to pass through, unlike the metal collection plate portion (600) that shields the induced electric field, and, for example, may be composed of a ceramic material.

[0126] Meanwhile, the above-mentioned collection plate portion (600) may include a horizontal collection plate (610) and an extension portion (620) formed extending downward from the edge of the collection plate (610).

[0127] The above-mentioned collection plate (610) is a metal plate and can be arranged parallel to the upper surface of the substrate support (200) as a plate-shaped structure installed horizontally.

[0128] At this time, the above-mentioned collection plate (610) may be formed by penetrating the aforementioned slit (601) and a cover portion (700) may be installed.

[0129] Additionally, the above-mentioned collection plate (610) can be installed by being supported through a fastening member (640), such as a bolt or fastening shaft, which penetrates from the bottom surface and is installed in the insulating part (430).

[0130] At this time, a fastening member cover (650) covering the head of the fastening member (640) may be included to prevent the fastening member (640) from being exposed to the processing space (S). At this time, the fastening member cover (650) may be made of a non-metallic material to prevent damage to the fastening member (640) and to reduce the collection of particles in the area.

[0131] The above extension (620) may be configured to extend downward from the edge of the collection plate (610).

[0132] That is, the extension portion (620) can be configured to extend downward from the edge of the collection plate (610) as shown in FIGS. 2, 4 and 5 to enhance the collection of etched particles radiating upward from the center of the substrate (10), and to prevent electrical connection and short circuit with the lead frame (120) as metal particles, for example copper (Cu), are collected on the collection plate (610).

[0133] At this time, the extension (620) may be formed in a tapered shape with a thickness that decreases toward the lower side, as shown in FIGS. 4 and 5, in order to enhance capture from the inner side, and more specifically, the inner surface (621) may have a shape that expands stepwise or gradually toward the edge side as it goes downward.

[0134] The extension (620) may also be configured such that its outer surface (622) is formed vertically downward or has a tapered shape and slopes downward in a stepwise or progressive manner toward the center.

[0135] The exhaust trap section (800) is configured to be in communication with an exhaust port formed in the chamber body (110) within the processing space (S), forming at least a part of the exhaust path, and can be configured in various ways to capture particles in the exhaust gas being exhausted.

[0136] That is, the exhaust trap (800) may be provided to collect etched particles that move to a location adjacent to the exhaust port side by a flow according to the pressure in the processing space (S) through the process of etched gas being discharged or pumping through the exhaust port.

[0137] At this time, the exhaust trap section (800) may include, as shown in FIG. 1, an exhaust path forming section (810) which is provided in the processing space (S) and formed by penetrating the lower surface or side of the chamber body (110) and communicating with an exhaust port connected to an external vacuum pump to form a part of the exhaust path through which exhaust gas passes, a cooling section (820) installed within the exhaust path forming section (810) to cool the exhaust path and collect particles, and a baffle plate (830) provided below the exhaust path forming section (810) to uniformly exhaust the exhaust gas.

[0138] The above exhaust path forming part (810) may be configured such that it is provided at the front end of the exhaust port on the side of the substrate support part (200), has a cooling part (820) installed inside, forms part of the exhaust path of the exhaust gas, and allows gas and particles to pass through.

[0139] For example, the exhaust path forming part (810) is formed in an annular shape along the side of the substrate support part (200) and a flow path through which exhaust gas and particles move is formed inside, and a cooling part (820) is installed in the flow path to maintain a relatively low temperature, thereby inducing the capture of particles in the exhaust gas.

[0140] The above cooling unit (820) may be configured to be connected to an external power source to maintain the temperature within the exhaust path forming unit (810) at a relatively low level, thereby inducing the collection of particles.

[0141] The above baffle plate (830) may be configured to be positioned at the front end of the exhaust port below the exhaust path forming section (810), and to have a plurality of exhaust holes formed therein to induce uniform exhaust of exhaust gas after particle collection is completed and uniform gas flow in the treatment space (S).

[0142]

[0143] The foregoing merely describes some preferred embodiments that can be implemented by the present invention. As is well known, the scope of the present invention should not be interpreted as being limited to the above embodiments, and all technical concepts that share the fundamental principles with the technical concept of the present invention described above shall be considered to be included within the scope of the present invention.

Claims

1. A process chamber (100) that forms a processing space (S) inside; A substrate support member (200) installed in the process chamber (100) and supporting the substrate (10) in the processing space (S); A gas injection unit (300) that injects etching gas into the above processing space (S); A plasma power supply (500) that forms a plasma atmosphere in the above processing space (S); A substrate processing device characterized by including a collection plate portion (600) installed on the upper side of the substrate support portion (200) to collect particles etched through the etching gas.

2. In Claim 1, The above-mentioned collection plate portion (600) is, A substrate processing apparatus characterized by including at least one of ceramic and metal.

3. In Claim 1, The above-mentioned collection plate portion (600) is, A substrate processing apparatus characterized by including at least one of copper (Cu) and silver (Ag).

4. In Claim 1, The above-mentioned collection plate portion (600) is, A substrate processing apparatus characterized by including the same material as the thin film of the substrate (10) to be etched.

5. In Claim 1, The above plasma power supply (500) is, It includes an antenna part (510) provided on the upper side of the window assembly (400) to form an induced electric field in the processing space (S), and an RF power source (520) that applies RF power to the antenna part (510). A substrate processing apparatus characterized by including a window assembly (400) that is installed in an opening (101) formed at the top of the process chamber (100) and is equipped with a window (410) that transmits the induced electric field formed through the plasma power supply (500).

6. In Claim 5, The above window assembly (400) is, A substrate processing device characterized by additionally including a protective plate (420) provided at the bottom of the above window (410).

7. In Claim 5, The above-mentioned collection plate portion (600) is, A substrate processing device characterized by having a plurality of slits (601) formed that penetrate in the vertical direction.

8. In Claim 7, A substrate processing device characterized by additionally including a cover portion (700) provided on the collection plate portion (600) to cover the above slit (601).

9. In Claim 8, The above cover portion (700) is, A substrate processing device characterized by being formed of a different material from the above-mentioned collection plate portion (600).

10. In Claim 8, The above-mentioned collection plate portion (600) is, It is made of metal, The above cover portion (700) is, A substrate processing device characterized by being composed of a material that allows the above-mentioned inductive electric field to pass through.

11. In Claim 7, The above-mentioned collection plate portion (600) is, A substrate processing device characterized in that the longitudinal direction of the slit (601) on the plane is parallel to the longitudinal direction of the antenna part (510).

12. In Claim 7, The above-mentioned collection plate portion (600) is, A substrate processing device characterized in that the longitudinal direction of the slit (601) on the plane intersects the longitudinal direction of the antenna part (510) on the plane.

13. In Claim 1, The above-mentioned collection plate portion (600) is, A substrate processing device characterized by including a horizontally installed collection plate (610) and an extension part (620) extending downward from the edge of the collection plate (610).

14. In Claim 13, The above extension part (620) is, A substrate processing device characterized by being formed in a tapered shape in which the thickness decreases toward the lower side.

15. In Claim 13, The above extension part (620) is, A substrate processing device characterized by the inner surface (621) extending stepwise or gradually toward the edge as it goes downward.

16. In Claim 1, The above-mentioned collection plate portion (600) is, A substrate processing device characterized by being arranged to overlap with the substrate (10) on a plane and having a larger planar area than the substrate (10).

17. In Claim 1, The above-mentioned collection plate portion (600) is, A substrate processing device characterized by being electrically floating.

18. In Claim 5, The above process chamber (100) is, It includes a chamber body (110) in which the opening (101) is formed, and a lead frame (120) installed at the edge of the opening (101). The above window assembly (400) is, A substrate processing device characterized by additionally including a cover plate (430) installed on the bottom surface of the lead frame (120) to electrically insulate between the collection plate portion (600) positioned at the bottom and the lead frame (120).

19. In Claim 6, The above protective plate (420) is, A substrate processing device characterized by being formed of a flexible material.

20. In Claim 6, The above protective plate (420) is, A substrate processing device characterized by being made of PTFE (Polytetrafluoroethylene).

21. In Claim 5, The above window assembly (400) is, A substrate processing device characterized by additionally including a window frame (440) that is installed in the opening (101) and supports the windows (410) by forming a plurality of divided openings for installing a plurality of the windows (410).

22. In Claim 21, The above-mentioned collection plate portion (600) is, A substrate processing device characterized by having a single unit provided at the bottom of the above-mentioned window assembly (400) to cover a plurality of the above-mentioned windows (410).

23. In Claim 5, The above window (410) is, A substrate processing device characterized by being a dielectric.

24. In Claim 1, A substrate processing device characterized by additionally including an exhaust trap (800) that is provided within the processing space (S) to communicate with an exhaust port formed in the chamber body (110), forms at least a part of the exhaust path, and collects particles in the exhaust gas being exhausted.

25. In Claim 1, The above substrate support (200) is, A substrate processing device characterized by including an electrode (210) connected to a bias power source (230) to receive bias power.

26. In Claim 1, The above gas injection unit (300) is, A substrate processing device characterized by injecting the etching gas supplied from the outside through the above-mentioned collection plate (600) into the processing space (S).

27. In Claim 26, The above gas injection unit (300) is, A substrate processing device characterized by being installed by penetrating the above-mentioned collection plate (600) and coupled to the bottom surface of the above-mentioned window assembly (400).

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