Method and device for manufacturing black silicon battery
A manufacturing method and a technology for manufacturing a device are applied in the field of the manufacturing method and device of a black silicon battery, and can solve the problems of difficulty in improving the uniformity of diffusion resistance and conversion efficiency, difficult to control the uniformity of the SiO2 layer, and difficult to control the uniformity of the gas. , to achieve the effect of improving electrical properties, uniform surface resistance and good uniformity
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Publication Date
- 2018-03-06
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Abstract
Description
technical field
[0001] The invention relates to the field of photovoltaic module manufacturing, in particular to a method and device for manufacturing a black silicon battery. Background technique
[0002] Due to the increasingly serious problem of environmental pollution and the increasing shortage of ore and other energy sources, the solar photovoltaic industry has developed rapidly in recent years. The core of the photovoltaic industry—solar cells are mainly prepared by high-purity silicon wafers, which include related processes such as texturing, diffusion, PECVD, and screen printing machine sintering. The processes of each process are relatively complicated, especially the diffusion. It is to prepare the solar cell PN junction, the uniformity of the diffusion process and the preparation of the PN junction have a great influence on the conversion efficiency of the solar cell.
[0003] At present, in the production process of solar cells, the cleaned silicon wafers will ...
Examples
Embodiment Construction
[0038] As mentioned in the background technology section, in the current solar cell production process, it is difficult to control the uniformity of the gas due to the long diffusion furnace tube, and there are differences in the oxidation time of the silicon wafer in the furnace, so the SiO formed by the oxidation of the silicon wafer 2 The uniformity of the layer is also difficult to control, so it is difficult to improve the uniformity of the diffusion resistance and the conversion efficiency.
[0039] Based on this, an embodiment of the present invention provides a method for manufacturing a black silicon battery, including:
[0040] Step 1, using O3 components to oxidize the P-type diamond wire silicon wafer, the O around the P-type diamond wire silicon wafer 2 The concentration of flow-through is higher than that of O in the central region 2 flow through concentration;
[0041] Step 2, performing phosphorus diffusion on the P-type diamond wire silicon wafer;
[0042] ...