Method and device for manufacturing black silicon battery

Abstract

The invention discloses a manufacturing method and device of a black silicon cell, wherein the manufacturing method comprises the steps of: 1, carrying out oxidation on a P type diamond wire silicon chip, wherein the concentration of O2 flowing through the area around P type diamond wire silicon chip is higher than that of O2 flowing through the central area; and 2, carrying out P diffusion on the P type diamond wire silicon chip. According to the invention, the P type diamond wire silicon chip is oxidized before P diffusion, the concentration of O2 flowing through the area around P type diamond wire silicon chip is higher than that of O2 flowing through the central area, the thickness of the oxidation layer deposited in central area of the P type diamond wire silicon chip is smaller than the thickness of the oxidation layer deposited in the peripheral area, and P diffusion is slowed by the oxidation layer, so that the evenness of P diffusion is better, the superficial diffusion square resistance is more uniform, and the improvement of the electric performance of the black silicon cell is facilitated.

Description

technical field [0001] The invention relates to the field of photovoltaic module manufacturing, in particular to a method and device for manufacturing a black silicon battery. Background technique [0002] Due to the increasingly serious problem of environmental pollution and the increasing shortage of ore and other energy sources, the solar photovoltaic industry has developed rapidly in recent years. The core of the photovoltaic industry—solar cells are mainly prepared by high-purity silicon wafers, which include related processes such as texturing, diffusion, PECVD, and screen printing machine sintering. The processes of each process are relatively complicated, especially the diffusion. It is to prepare the solar cell PN junction, the uniformity of the diffusion process and the preparation of the PN junction have a great influence on the conversion efficiency of the solar cell. [0003] At present, in the production process of solar cells, the cleaned silicon wafers will ...

AI Technical Summary

Problems solved by technology

However, due to the long diffusion furnace tube, it is difficult to control the uniformity of the gas, and there are differences in the oxidation time of silicon wafers in the furnace, so the uniformity of the SiO2 layer formed by the oxidation of silicon wafers is also difficult to control, which is difficult to improve. Uniformity of Diffusion Square Resistance and Conversion Efficiency

Images