A method and device for measuring the thickness of a storage medium
A storage medium and measurement method technology, which is applied in the field of storage medium thickness measurement methods and devices, can solve the problems of long time consumption, long storage medium thickness, and extended storage medium delivery cycle, so as to shorten the delivery cycle and shorten the measurement. the effect of time
Active Publication Date: 2019-11-19
YANGTZE MEMORY TECH CO LTD
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Problems solved by technology
However, since the 3D NAND manufacturing process needs to include tens or even hundreds of layers of dielectric film storage medium, which is more than the traditional planar NAND dielectric film layer, the calculation speed of the storage medium is relatively high. If there is no suitable method to measure the thickness of the storage medium, it will take too long to calculate the thickness of the storage medium, and it will take too much time to measure the machine, prolonging the delivery cycle of the storage medium
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[0057] Embodiments of the present application are described below in conjunction with the accompanying drawings.
[0058] The traditional way of measuring the thickness of the storage medium is based on the method of real-time regression fitting. In this traditional method, when using the method based on real-time regression fitting to measure the thickness of each layer of dielectric film in the storage medium to be measured, after collecting the spectrum of the storage medium to be measured, the storage medium model is established, and when the When measuring each layer of dielectric film in the storage medium to be measured, it is necessary to set different thickness values for each layer of dielectric film in the storage medium model, and to obtain the data collected after the storage medium model is irradiated by a simulated light source. Spectrum, that is, a regression fitting is required after each assignment to obtain the spectrum corresponding to the current assignm...
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The embodiment of the application discloses a measuring method of the thickness of a storage medium. The method includes: obtaining a practically measured spectrum, wherein the practically measured spectrum is a spectrum acquired by a to-be-measured storage medium through irradiation of a practical light source; finding a first target sample spectrum in a pre-established sample spectrum database according to the practically measured spectrum, wherein the sample spectrum database comprises sample spectrums corresponding to different sample storage media, and the regression fitting goodness between the first target sample spectrum and the practically measured spectrum is the highest; and determining a thickness value of the to-be-measured storage medium according to a thickness value of thesample storage medium corresponding to the first target sample spectrum. Therefore, according to the method and apparatus, modeling, assignment, and regression fitting calculation of the to-be-measured storage medium after acquisition of the practically measured spectrum can be avoided, the measuring time of the thickness of the storage medium is reduced, and the delivery cycle of the storage medium is shortened.
Description
technical field [0001] The present application relates to the field of storage media, in particular to a method and device for measuring the thickness of a storage medium. Background technique [0002] Computer flash memory devices (NAND flash memory, referred to as NAND), such as 3D NAND, planar NAND and other storage media, all need to deposit several pairs or even hundreds of layers of dielectric films as storage units, wherein a layer of dielectric films can include multiple layers of materials Layers, for example, the material layers are a layer of silicon dioxide and a layer of silicon nitride. Usually, the thickness of the storage medium needs to be measured because the thickness of the storage medium is extremely important to the subsequent process and the electrical performance of the device. [0003] At present, the thickness of the storage medium is mainly calculated based on a real-time regression fitting method. When measuring a layer of dielectric film in a s...
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IPC IPC(8): G01B11/06
Inventor邓常敏芈健周毅张硕陈子琪
OwnerYANGTZE MEMORY TECH CO LTD