Light-emitting display device

Abstract

The light-emitting display device includes: an insulating substrate; a semiconductor layer located above the insulating substrate; a first gate insulating film located above the semiconductor layer; a first gate conductor located above the first gate insulating film; a second gate insulating film located above the first gate conductor; a second gate conductor located above the second gate insulating film; an interlayer insulating film located above the second gate conductor; a data conductor located above the interlayer insulating film; a protective film located above the data conductor; a diode first electrode located above the protective film; a partition wall located above the diode first electrode and the protective film and having an opening overlapping with the diode first electrode; a light-emitting layer located above the diode first electrode in the opening; and a diode second electrode located above the light-emitting layer and the partition wall, the data conductor including a left-side inclined surface located on the left side of the plane and a right-side inclined surface located on the right side of the plane, the left-side inclined surface being different in area from the right-side inclined surface.

Description

Technical Field

[0001] The present disclosure relates to a light emitting display device and a method for manufacturing the same. Background Art

[0002] The light-emitting display device has its own light-emitting characteristics. Unlike the liquid crystal display device, it does not need to be equipped with a separate light source, so it can reduce thickness and weight. In addition, the light-emitting display device exhibits high-quality characteristics such as low power consumption, high brightness and high response speed.

[0003] The light-emitting display device includes a light-emitting diode, which includes two electrodes and a light-emitting layer located therebetween. When holes and electrons are injected into the light-emitting layer from the two electrodes respectively, light is emitted when excitons formed by the injected holes and electrons fall from an excited state to a ground state.

[0004] In the case of a light-emitting diode, the electrode overlapping the light-emitting layer may have a concave-convex shape, which may cause color changes depending on the viewing angle. Summary of the invention

[0005] Each embodiment provides a light-emitting display device capable of improving a viewing angle.

[0006] A light-emitting display device according to an embodiment of the present invention includes: an insulating substrate; a semiconductor layer located above the insulating substrate; a first gate insulating film located above the semiconductor layer; a first gate conductor located above the first gate insulating film; a second gate insulating film located above the first gate conductor; a second gate conductor located above the second gate insulating film; an interlayer insulating film located above the second gate conductor; a data conductor located above the interlayer insulating film; a protective film located above the data conductor; a diode first electrode located above the protective film; a partition wall located above the diode first electrode and the protective film and having an opening overlapping with the diode first electrode; a light-emitting layer located above the diode first electrode in the opening; and a diode second electrode located above the light-emitting layer and the partition wall, the data conductor including a left-side inclined surface located on the left side of a plane and a right-side inclined surface located on the right side of the plane, the area of ​​the left-side inclined surface being different from the area of ​​the right-side inclined surface.

[0007] The data conductor may overlap with the opening.

[0008] The left side inclined surface may include a left side inclined surface overlapping portion overlapping with the opening portion, and the right side inclined surface may include a right side inclined surface overlapping portion overlapping with the opening portion.

[0009] The sum of the areas of the overlapping portions of the left inclined surfaces may be the same as the sum of the areas of the overlapping portions of the right inclined surfaces.

[0010] An area of ​​the left inclined surface may be wider than an area of ​​the right inclined surface.

[0011] The left inclined surface may have a sawtooth shape in a plane.

[0012] The protective film may have projections and depressions formed on an upper surface.

[0013] The diode first electrode may have a concavo-convex shape.

[0014] The concavo-convex shape of the diode first electrode may overlap with the opening.

[0015] A method for manufacturing a light-emitting display device according to an embodiment of the present invention includes: a step of forming a semiconductor layer located above an insulating substrate; a step of forming a first gate insulating film above the semiconductor layer; a step of forming a first gate conductor above the first gate insulating film; a step of forming a second gate insulating film above the first gate conductor; a step of forming a second gate conductor above the second gate insulating film; a step of forming an interlayer insulating film above the second gate conductor; a step of forming a data conductor above the interlayer insulating film; a step of forming a protective film above the data conductor; a step of forming a first electrode of a diode above the protective film; a step of forming a partition having an opening overlapping with the first electrode of the diode above the first electrode of the diode and the protective film; a step of forming a light-emitting layer above the first electrode of the diode in the opening; and a step of forming a second electrode of the diode above the light-emitting layer and the partition, wherein the data conductor includes a left inclined surface located on the left side of a plane and a right inclined surface located on the right side of the plane, and the area of ​​the left inclined surface is different from the area of ​​the right inclined surface.

[0016] The step of forming the data conductor may include: a step of forming a data metal layer above the interlayer insulating film; a step of forming a photosensitive film above the data metal layer; a step of irradiating light to the photosensitive film using a photomask to form a first photosensitive film pattern; a step of etching the data metal layer using the first photosensitive film pattern as a mask to form a preliminary data conductor; a step of ashing the first photosensitive film pattern to form a second photosensitive film pattern; and a step of etching the preliminary data conductor using the second photosensitive film pattern as a mask.

[0017] The photomask may include a light-transmitting portion, a light-shielding portion, and a semi-light-transmitting portion, the first photosensitive film pattern may include a first portion and a second portion thinner than the first portion, the first portion corresponds to the light-transmitting portion, and the second portion corresponds to the semi-light-transmitting portion.

[0018] The second photosensitive film pattern may be formed by removing the first portion and thinning the second portion.

[0019] (Effects of the Invention)

[0020] According to each embodiment, by adjusting the areas of the left and right inclined surfaces of the data conductors to reduce the color change caused by the viewing angle, the viewing angle of the light-emitting display device can be improved. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] Figure 1 FIG. 4 is an equivalent circuit diagram of a pixel of a light emitting display device according to an embodiment of the present invention.

[0022] Figure 2 This is a diagram schematically showing an example of a plane of one pixel of a light-emitting display device according to an embodiment of the present invention.

[0023] Figure 3 It is a schematic diagram showing the cutting along line III-III' Figure 2 A diagram showing an example of a cross section of a light-emitting display device.

[0024] Figure 4 It is schematically shown Figure 2 FIG. 1 is a diagram showing an example of a plane of a driving voltage line and a first data connecting component of a light-emitting display device.

[0025] Figure 5 It is a schematic diagram showing a cut along the line V-V' Figure 4 FIG. 2 is a diagram showing an example of a cross-section of a driving voltage line and a first data connecting component.

[0026] Figures 6 to 8 FIG. 1 is a diagram schematically showing an example of a method for manufacturing a light-emitting display device according to an embodiment of the present invention.

[0027] Fig. 9 and Fig.10 Each of them schematically shows an example of a plane of a driving voltage line and a first data connecting member of a light emitting display device according to an embodiment of the present invention.

[0028] Explanation of symbols:

[0029] 130: semiconductor layer; 151: first scanning line; 152: second scanning line; 153: light emitting control line; 155: first gate electrode; 158: bypass control line; 171: data line; 172: driving voltage line; 172L: left inclined surface; 172R: right inclined surface; 172LA: left inclined surface overlapping portion; 172RA: right inclined surface overlapping portion; 191: diode first electrode; 270: diode second electrode; 300: photomask; 350: partition wall; 351: opening portion; 370: light emitting layer; 71: first data connecting member; 72: second data connecting member; 71L: left inclined surface; 71R: right inclined surface; 71LA: left inclined surface overlapping portion; 71RA: right inclined surface overlapping portion; 73: third data connecting member; 79: capacitor control pattern. DETAILED DESCRIPTION

[0030] Hereinafter, multiple embodiments of the present invention will be described in detail with reference to the accompanying drawings so that those skilled in the art can easily implement the present invention. The present invention can be implemented in various different forms and is not limited to the embodiments described herein.

[0031] In order to clearly describe the present invention, parts not related to the description are omitted, and the same or similar components are denoted by the same reference numerals throughout the specification.

[0032] In addition, for the convenience of explanation, the size and thickness of each structure shown in the drawings are arbitrary, so the present invention is not limited to the contents of the drawings. In order to clearly show multiple layers and regions, the thickness is enlarged in the drawings. In addition, for the convenience of explanation, the thickness of some layers and regions is exaggerated in the drawings.

[0033] In addition, when a layer, film, region, plate or the like is described as being placed "above" or "on" another part, it includes not only the case where it is "directly above" another part, but also the case where other parts are provided therebetween. Conversely, when a part is described as being "directly above" another part, it means that no other part exists therebetween. In addition, when it is described as being "above" or "on" a part serving as a reference, it means being located above or below the part serving as the reference, and does not necessarily mean being "above" or "on" the side opposite to the gravity.

[0034] Furthermore, throughout the specification, when a certain part is described as “comprising” a certain structural element, unless there is a particular description to the contrary, it means that other structural elements may also be included, rather than excluding the other structural elements.

[0035] In addition, throughout the specification, the term "on a plane" means that the target portion is viewed from above, and the term "on a cross section" means that the cross section of the target portion cut vertically is viewed from the side.

[0036] Figure 1 FIG. 4 is an equivalent circuit diagram of a pixel of a light emitting display device according to an embodiment of the present invention.

[0037] Reference Figure 1 A pixel of the light-emitting display device of this embodiment includes: a plurality of transistors T1, T2, T3, T4, T5, T6, T7 connected to a plurality of signal lines 127, 151, 152, 153, 158, 171, 172, 741, a storage capacitor Cst and a light-emitting diode LED.

[0038] The plurality of transistors include a driving transistor T1, and a switching transistor connected to the first scan line 151, namely, a second transistor T2 and a third transistor T3. The transistors other than the above are transistors for performing actions required to operate the light emitting diode LED (hereinafter referred to as compensation transistors). Such compensation transistors may include a fourth transistor T4, a fifth transistor T5, a sixth transistor T6, and a seventh transistor T7.

[0039] The plurality of signal lines may include a first scan line 151, a second scan line 152, a light emission control line 153, a bypass control line 158, a data line 171, a driving voltage line 172, an initialization voltage line 127, and a common voltage line 741. The bypass control line 158 may be a part of the second scan line 152 or electrically connected thereto.

[0040] The first scan line 151 is connected to the gate driving unit and transmits the scan signal Sn to the second transistor T2 and the third transistor T3. The second scan line 152 is connected to the gate driving unit and transmits the second scan signal Sn-1 applied to the pixel at the front end to the fourth transistor T4. The light control line 153 is connected to the light control unit and transmits the light control signal EM for controlling the light emitting diode LED to the fifth transistor T5 and the sixth transistor T6. The bypass control line 158 transmits the bypass signal GB to the seventh transistor T7.

[0041] The data line 171 is a wiring for transmitting the data voltage Dm generated by the data driving unit. According to the data voltage Dm, the brightness of the light emitted by the light emitting diode (LED; also called the light emitting element) changes. The driving voltage line 172 applies the driving voltage ELVDD. The initialization voltage line 127 transmits the initialization voltage Vint for initializing the driving transistor T1. The common voltage line 741 applies the common voltage ELVSS. The voltages applied to the driving voltage line 172, the initialization voltage line 127, and the common voltage line 741 may be certain voltages respectively applied.

[0042] A plurality of transistors are described below. Each transistor includes a gate electrode, a first electrode and a second electrode.

[0043] The driving transistor T1 is a transistor that adjusts the magnitude of the output current according to the applied data voltage Dm. The output driving current Id is applied to the light emitting diode LED, so that the brightness of the light emitting diode LED is adjusted according to the data voltage Dm. To this end, the first electrode S1 of the driving transistor T1 is configured to be able to receive the driving voltage ELVDD. The first electrode S1 is connected to the driving voltage line 172 via the fifth transistor T5. In addition, the first electrode S1 of the driving transistor T1 is also connected to the second electrode D2 of the second transistor T2, so as to also receive the data voltage Dm. The second electrode (D1, output electrode) of the driving transistor T1 is configured to be able to output current to the light emitting diode LED. The second electrode D1 of the driving transistor T1 is connected to the anode of the light emitting diode LED via the sixth transistor T6. In addition, the gate electrode G1 of the driving transistor T1 is connected to one electrode (second storage electrode E2) of the storage capacitor Cst. Thus, according to the voltage stored in the storage capacitor Cst, the voltage of the gate electrode G1 of the driving transistor T1 changes, thereby changing the driving current Id output by the driving transistor T1.

[0044] The second transistor T2 is a transistor that receives a data voltage Dm into the pixel. The gate electrode G2 of the second transistor T2 is connected to the first scan line 151, and the first electrode S2 of the second transistor T2 is connected to the data line 171. The second electrode D2 of the second transistor T2 is connected to the first electrode S1 of the driving transistor T1. When the second transistor T2 is turned on according to the scan signal Sn transmitted through the first scan line 151, the data voltage Dm transmitted through the data line 171 is transmitted to the first electrode S1 of the driving transistor T1.

[0045] The third transistor T3 is a transistor that transmits the compensation voltage (voltage of Dm+Vth) after the data voltage Dm is changed by the driving transistor T1 to the second storage electrode E2 of the storage capacitor Cst. The gate electrode G3 of the third transistor T3 is connected to the first scan line 151, and the first electrode S3 of the third transistor T3 is connected to the second electrode D1 of the driving transistor T1. The second electrode D3 of the third transistor T3 is connected to the second storage electrode E2 of the storage capacitor Cst and the gate electrode G1 of the driving transistor T1. The third transistor T3 is turned on according to the scan signal Sn received through the first scan line 151, thereby connecting the gate electrode G1 of the driving transistor T1 and the second electrode D1, and also connecting the second electrode D1 of the driving transistor T1 and the second storage electrode E2 of the storage capacitor Cst.

[0046] The fourth transistor T4 serves to initialize the gate electrode G1 of the driving transistor T1 and the second storage electrode E2 of the storage capacitor Cst. The gate electrode G4 of the fourth transistor T4 is connected to the second scan line 152, and the first electrode S4 of the fourth transistor T4 is connected to the initialization voltage line 127. The second electrode D4 of the fourth transistor T4 is connected to the second storage electrode E2 of the storage capacitor Cst and the gate electrode G1 of the driving transistor T1 via the second electrode D3 of the third transistor T3. The fourth transistor T4 transmits the initialization voltage Vint to the gate electrode G1 of the driving transistor T1 and the second storage electrode E2 of the storage capacitor Cst according to the second scan signal Sn-1 received through the second scan line 152. Thus, the gate voltage of the gate electrode G1 of the driving transistor T1 and the storage capacitor Cst are initialized. The initialization voltage Vint can be a voltage with a low voltage value and capable of turning on the driving transistor T1.

[0047] The fifth transistor T5 transmits the driving voltage ELVDD to the driving transistor T1. The gate electrode G5 of the fifth transistor T5 is connected to the light emission control line 153, and the first electrode S5 of the fifth transistor T5 is connected to the driving voltage line 172. The second electrode D5 of the fifth transistor T5 is connected to the first electrode S1 of the driving transistor T1.

[0048] The sixth transistor T6 plays the role of transmitting the driving current Id output from the driving transistor T1 to the light emitting diode LED. The gate electrode G6 of the sixth transistor T6 is connected to the light emitting control line 153, and the first electrode S6 of the sixth transistor T6 is connected to the second electrode D1 of the driving transistor T1. The second electrode D6 of the sixth transistor T6 is connected to the anode of the light emitting diode LED.

[0049] The fifth transistor T5 and the sixth transistor T6 are turned on at the same time according to the light emitting control signal EM received through the light emitting control line 153. When the driving voltage ELVDD is applied to the first electrode S1 of the driving transistor T1 through the fifth transistor T5, the driving transistor T1 outputs the driving current Id according to the voltage of the gate electrode G1 of the driving transistor T1 (i.e., the voltage of the second storage electrode E2 of the storage capacitor Cst). The output driving current Id is transmitted to the light emitting diode LED through the sixth transistor T6. As the current Id flows in the light emitting diode LED, led , the light emitting diode LED will emit light.

[0050] The seventh transistor T7 serves to initialize the anode of the light emitting diode LED. The gate electrode G7 of the seventh transistor T7 is connected to the bypass control line 158, the first electrode S7 of the seventh transistor T7 is connected to the anode of the light emitting diode LED, and the second electrode D7 of the seventh transistor T7 is connected to the initialization voltage line 127. The bypass control line 158 can be connected to the second scan line 152, and the bypass signal GB is applied with a signal of the same time as the second scan signal Sn-1. The bypass control line 158 may also not be connected to the second scan line 152, but transmit a signal different from the second scan signal Sn-1. When the seventh transistor T7 is turned on according to the bypass signal GB, the initialization voltage Vint is applied to the anode of the light emitting diode LED, thereby being initialized.

[0051] The first storage electrode E1 of the storage capacitor Cst is connected to the driving voltage line 172, and the second storage electrode E2 is connected to the gate electrode G1 of the driving transistor T1, the second electrode D3 of the third transistor T3, and the second electrode D4 of the fourth transistor T4. Therefore, the second storage electrode E2 determines the voltage of the gate electrode G1 of the driving transistor T1, and the data voltage Dm is applied to the second electrode D3 of the third transistor T3, or the initialization voltage Vint is applied to the second electrode D4 of the fourth transistor T4.

[0052] An anode of the light emitting diode LED is connected to the second electrode D6 of the sixth transistor T6 and the first electrode S7 of the seventh transistor T7 , and a cathode of the light emitting diode LED is connected to a common voltage line 741 transmitting a common voltage ELVSS.

[0053] exist Figure 1 In the embodiment, a circuit of a pixel of the light-emitting display device of this embodiment includes seven transistors T1-T7 and one capacitor Cst, but the present invention is not limited thereto, and the number of transistors and the number of capacitors and their connections may be changed in various ways.

[0054] The following, with Figure 1 Refer to Figures 2 to 5 To illustrate Figure 1 Detailed structure of a pixel of a light-emitting display device shown.

[0055] Figure 2 This is a diagram schematically showing an example of a plane of one pixel of a light-emitting display device according to an embodiment of the present invention. Figure 3 Schematic diagram showing the cutting along line III-III' Figure 2 A diagram showing an example of a cross section of a light-emitting display device.

[0056] Reference Figure 2 The light-emitting display device of this embodiment includes a first scan line 151 extending along a first direction D1 and transmitting a first scan signal Sn, a second scan line 152 transmitting a second scan signal Sn-1, a light-emitting control line 153 transmitting a light-emitting control signal EM, and an initialization voltage line 127 transmitting an initialization voltage Vint. The bypass signal GB is transmitted through the second scan line 152.

[0057] In addition, the light emitting display device of the present embodiment includes a data line 171 extending in a second direction D2 orthogonal to the first direction D1 and transmitting a data voltage Dm, and a driving voltage line 172 transmitting a driving voltage ELVDD.

[0058] In addition, the light emitting display device of the present embodiment includes a driving transistor T1 , a second transistor T2 , a third transistor T3 , a fourth transistor T4 , a fifth transistor T5 , a sixth transistor T6 , a seventh transistor T7 , a storage capacitor Cst and a light emitting diode LED.

[0059] The channels of the driving transistor T1, the second transistor T2, the third transistor T3, the fourth transistor T4, the fifth transistor T5, the sixth transistor T6 and the seventh transistor T7 are located in the semiconductor layer 130 which is extended long. In addition, at least a part of the first electrodes and the second electrodes of the plurality of transistors T1, T2, T3, T4, T5, T6 and T7 are also located in the semiconductor layer 130. The semiconductor layer 130 ( Figure 2 The shaded portion in FIG. 1 may be formed to be bent in various shapes. The semiconductor layer 130 may include a polycrystalline semiconductor such as polycrystalline silicon or an oxide semiconductor.

[0060] The semiconductor layer 130 includes a channel and a first doped region and a second doped region that are channel-doped with n-type impurities or p-type impurities. The first doped region and the second doped region correspond to the first electrodes and the second electrodes of the plurality of transistors T1, T2, T3, T4, T5, T6, and T7, respectively. If one of the first doped region and the second doped region is a source region, the other one can be a drain region. In addition, in the semiconductor layer 130, the region between the first electrode and the second electrode of different transistors is also doped, so that the two transistors can be electrically connected to each other.

[0061] The channels of the plurality of transistors overlap with the gate electrodes of the transistors and are located between the first electrode and the second electrode of the transistors. The plurality of transistors may have substantially the same stacked structure. The following is mainly described in detail with the driving transistor T1, and the remaining transistors T2, T3, T4, T5, T6, and T7 are briefly described.

[0062] The driving transistor T1 includes: a channel, a first gate electrode 155, a first electrode S1 and a second electrode D1. The channel of the driving transistor T1 is located between the first electrode S1 and the second electrode D1, and overlaps with the first gate electrode 155 on a plane. The channel is bent in order to form a longer length of the channel in a limited area. As the length of the channel becomes longer, the driving range of the gate voltage Vg applied to the first gate electrode 155 of the driving transistor T1 becomes wider, and the driving current Id increases to a certain extent according to the gate voltage Vg. Thus, by changing the magnitude of the gate voltage Vg, the grayscale of the light emitted from the light emitting diode LED can be more finely controlled, and the display quality of the light emitting display device can also be improved. In addition, since the channel extends in multiple directions rather than in one direction, the influence corresponding to the directionality in the manufacturing process is offset, thereby also having the advantage of reducing the influence of process dispersion. Thus, it is possible to prevent the degradation of image quality such as spot defects (for example, brightness differences occur at different pixels even when the same data voltage Dm is applied) that may occur due to the process dispersion causing the characteristics of the driving transistor T1 to differ in different regions of the display device. There are many possible channel shapes, and they are not limited to the shape shown in this embodiment.

[0063] The first gate electrode 155 overlaps with the channel in a plane. The first electrode S1 and the second electrode D1 are respectively located on both sides of the channel. An extended portion of the storage line 126 is arranged in an insulated manner above the first gate electrode 155. The extended portion of the storage line 126 overlaps with the first gate electrode 155 in a plane with the second gate insulating film sandwiched therebetween, thereby forming a storage capacitor Cst. The extended portion of the storage line 126 is a first storage electrode ( Figure 1The first gate electrode 155 constitutes a second storage electrode ( Figure 1 The expanded portion of the storage line 126 is formed with an opening 56 so that the first gate electrode 155 can be connected to the first data connection member 71. In the opening 56, the upper surface of the first gate electrode 155 and the first data connection member 71 are electrically connected through the contact hole 61. The first data connection member 71 is connected to the second electrode D3 of the third transistor T3, thereby connecting the first gate electrode 155 of the driving transistor T1 and the second electrode D3 of the third transistor T3.

[0064] The gate electrode of the second transistor T2 may be a portion of the first scan line 151. The first electrode S2 of the second transistor T2 is connected to the data line 171 through the contact hole 62. The first electrode S2 and the second electrode D2 may be located on the semiconductor layer 130.

[0065] The third transistor T3 may be composed of two transistors adjacent to each other. Figure 2 In the figure, T3 is indicated on the left and lower sides based on the bent portion of the semiconductor layer 130. These two portions respectively perform the function of the third transistor T3, and have a structure in which the first electrode S3 of one third transistor T3 is connected to the second electrode D3 of another third transistor T3. The gate electrodes of the two transistors T3 may be a part of the first scan line 151 or a portion protruding upward from the first scan line 151. This structure may be referred to as a dual gate structure, which may perform the function of cutting off the flow of leakage current. The first electrode S3 of the third transistor T3 is connected to the first electrode S6 of the sixth transistor T6 and the second electrode D1 of the driving transistor T1. The second electrode D3 of the third transistor T3 is connected to the first data connection member 71 through the contact hole 63.

[0066] The fourth transistor T4 is also composed of two fourth transistors T4, and the two fourth transistors T4 are formed at the part where the second scan line 152 meets the semiconductor layer 130. The gate electrode of the fourth transistor T4 can be a part of the second scan line 152. There is a structure in which the first electrode S4 of one fourth transistor T4 is connected to the second electrode D4 of another fourth transistor T4. Such a structure can be called a dual gate structure, which can perform the function of cutting off the flow of leakage current. The first electrode S4 of the fourth transistor T4 is connected to the second data connection member 72 through the contact hole 65, and the second electrode D2 of the fourth transistor T4 is connected to the first data connection member 71 through the contact hole 63.

[0067] As described above, by using a double gate structure as the third transistor T3 and the fourth transistor T4 , the electron movement path in the channel in the off state is cut off, thereby effectively preventing the leakage current from occurring.

[0068] The gate electrode of the fifth transistor T5 may be a part of the light emission control line 153. The first electrode S5 of the fifth transistor T5 is connected to the driving voltage line 172 through the contact hole 67, and the second electrode D5 is connected to the first electrode S1 of the driving transistor T1 through the semiconductor layer 130.

[0069] The gate electrode of the sixth transistor T6 may be a part of the light emission control line 153. The second electrode D6 of the sixth transistor T6 is connected to the third data connection member 73 through the contact hole 69, and the first electrode S6 is connected to the second electrode D1 of the driving transistor through the semiconductor layer 130.

[0070] The gate electrode of the seventh transistor T7 may be a portion of the second scan line 152. The first electrode S7 of the seventh transistor T7 is connected to the second electrode D6 of the sixth transistor T6, and the second electrode D7 is connected to the first electrode S4 of the fourth transistor T4.

[0071] The storage capacitor Cst includes a first storage electrode E1 and a second storage electrode E2 that overlap with each other with a second gate insulating film 142 interposed therebetween. The second storage electrode E2 corresponds to the gate electrode 155 of the driving transistor T1, and the first storage electrode E1 may be an extended portion of the storage line 126. The second gate insulating film 142 serves as a dielectric, and the electrostatic capacitance (capacitance) is determined by the charge accumulated in the storage capacitor Cst and the voltage between the first and second storage electrodes E1 and E2. By using the first gate electrode 155 as the second storage electrode E2, it is possible to ensure space for forming the storage capacitor Cst in a space that is narrowed due to the channel of the driving transistor T1 that occupies a larger area in the pixel.

[0072] The first storage electrode E1 is connected to the driving voltage line 172 through the contact hole 68. Thus, the storage capacitor Cst stores charges corresponding to the voltage difference between the driving voltage ELVDD transmitted to the first storage electrode E1 through the driving voltage line 172 and the gate voltage Vg of the first gate electrode 155.

[0073] The second data connection member 72 is connected to the initialization voltage line 127 through the contact hole 64. The third data connection member 73 is connected to the pixel electrode through the contact hole 81.

[0074] A parasitic capacitance control pattern 79 may be configured between the dual gate electrodes of the third transistor T3. There is a parasitic capacitance in the pixel, and when the voltage applied to the parasitic capacitance changes, the image quality characteristics may also change. The parasitic capacitance control pattern 79 is connected to a driving voltage line 172 through a contact hole 66. Thus, by applying a driving voltage ELVDD as a certain DC voltage to the parasitic capacitance, it is possible to prevent the image quality characteristics from changing. The parasitic capacitance control pattern 79 may also be located in a region different from that shown in the figure, and a voltage other than the driving voltage ELVDD may also be applied.

[0075] One end of the first data connection member 71 is connected to the first gate electrode 155 through the contact hole 61 , and the other end is connected to the second electrode D3 of the third transistor T3 and the second electrode D4 of the fourth transistor T4 through the contact hole 63 .

[0076] One end of the second data connection member 72 is connected to the first electrode S4 of the fourth transistor T4 through the contact hole 65 , and the other end of the second data connection member 72 is connected to the initialization voltage line 127 through the contact hole 64 .

[0077] The third data connection member 73 is connected to the second electrode D6 of the sixth transistor T6 through the contact hole 69 .

[0078] Reference Figure 2 and Figure 3 The stacked structure of the light-emitting display device of this embodiment is briefly described.

[0079] The light emitting display device of the present embodiment includes an insulating substrate 110. The insulating substrate 110 may include a plastic layer and a barrier layer. The plastic layer and the barrier layer may have a shape in which they are alternately stacked.

[0080] The plastic layer may include one selected from the group consisting of polyethersulfone (PES), polyacrylate (PAR), polyetherimide (PEI), polyethylene naphthalate (PEN), polyethylene terephthalate (PET), polyphenylene sulfide (PPS), polyarylate, polyimide (PI), polycarbonate PC, poly(aryleneether sulfone) and combinations thereof. The barrier layer may include at least one of silicon oxide, silicon nitride and aluminum oxide, but the present invention is not limited thereto and may also include any inorganic substance.

[0081] A buffer layer 112 is disposed on the insulating substrate 110. The buffer layer 112 may include an inorganic insulating material such as silicon oxide, silicon nitride, or aluminum oxide, or an organic insulating material such as polyimide acrylic.

[0082] A semiconductor layer 130 including channels of a plurality of transistors T1 , T2 , T3 , T4 , T5 , T6 , and T7 , a first electrode, and a second electrode is disposed above the buffer layer 112 .

[0083] A first gate insulating film 141 is disposed above the semiconductor layer 130 to cover the semiconductor layer 130. A first gate conductor including a first gate electrode 155, a first scanning line 151, a second scanning line 152, and a light emission control line 153 is disposed above the first gate insulating film 141.

[0084] A second gate insulating film 142 covering the first gate conductors is disposed above the first gate conductors 155, 151, 152, and 153. The first gate insulating film 141 and the second gate insulating film 142 may include an inorganic insulating material such as silicon nitride, silicon oxide, and aluminum oxide, or an organic insulating material.

[0085] A second gate conductor including a storage line 126 , an initialization voltage line 127 , and a parasitic capacitance control pattern 79 is disposed above the second gate insulating film 142 .

[0086] An interlayer insulating film 160 covering the second gate conductor is disposed above the second gate conductor. The interlayer insulating film 160 may include an inorganic insulating material such as silicon nitride, silicon oxide, and aluminum oxide, or an organic insulating material.

[0087] Data conductors including data lines 171, driving voltage lines 172, first data connection members 71, second data connection members 72, and third data connection members 73 are disposed above the interlayer insulating film 160. The first data connection member 71 may be connected to the first gate electrode 155 through the contact hole 61.

[0088] A protection film 180 is disposed above the data conductors to cover the data conductors. The protection film 180 may be an insulating film and may include an organic insulating material or an inorganic insulating material. The upper surface of the protection film 180 may be uneven due to the thickness of the data conductors.

[0089] The diode first electrode 191 is disposed above the protective film 180. The diode first electrode 191 is connected to the third data connection member 73 through the contact hole 81 formed in the protective film 180. The partition 350 is disposed above the protective film 180 and the diode first electrode 191. Due to the unevenness formed on the upper surface of the protective film 180, the diode first electrode 191 also has an uneven shape.

[0090] The partition wall 350 has an opening 351 overlapping with the diode first electrode 191. A light emitting layer 370 is arranged above the diode first electrode 191 in the opening 351. A diode second electrode 270 is arranged above the light emitting layer 370 and the partition wall 350. The diode first electrode 191, the light emitting layer 370 and the diode second electrode 270 constitute a light emitting diode LED. The diode first electrode 191 may include a reflective metal material, and the diode second electrode 270 may include a transparent metal material. The light emitting layer 370 may include an organic material or an inorganic material.

[0091] According to an embodiment, the diode first electrode 191 may be an anode as a hole injection electrode, and the diode second electrode 270 may be a cathode as an electron injection electrode. Conversely, the diode first electrode 191 may be a cathode, and the diode second electrode 270 may be an anode. When holes and electrons are injected into the light-emitting layer 370 from the diode first electrode 191 and the diode second electrode 270, respectively, light is emitted when the excitons formed by the injected holes and electrons fall from an excited state to a ground state.

[0092] A packaging layer 400 for protecting the light emitting diode LED is disposed above the diode second electrode 270. The packaging layer 400 may be in contact with the diode second electrode 270 as shown in the figure, or may be separated from the diode second electrode 270 according to the embodiment.

[0093] The encapsulation layer 400 may be a thin film encapsulation layer in which an inorganic film and an organic film are stacked, and may include a triple layer consisting of an inorganic film, an organic film and an inorganic film. According to an embodiment, a capping layer and a functional layer may be further disposed between the diode second electrode 270 and the encapsulation layer 400.

[0094] In addition, the opening 351 of the partition 350 overlaps with the driving voltage line 172 and the first data connecting member 71. As a result, the portion of the diode first electrode 191 overlapping with the opening 351 has a concave-convex shape, and the light-emitting layer 370 and the diode second electrode 270 located in the opening 351 also have a concave-convex shape. Under the effect of this concave-convex shape, the color changes with the viewing angle can be caused. In this embodiment, by adjusting the area of ​​the left and right inclined surfaces of the driving voltage line 172 and the first data connecting member 71 overlapping with the opening 351, the color changes caused by the viewing angle are reduced, thereby improving the viewing angle of the light-emitting display device.

[0095] In this regard, refer to Figure 4 and Figure 5 to explain.

[0096] Figure 4 It is schematically shown Figure 2FIG. 1 is a diagram showing an example of a plane of a driving voltage line and a first data connecting component of a light-emitting display device. Figure 5 It is a schematic diagram showing a cut along the line V-V' Figure 4 FIG. 2 is a diagram showing an example of a cross-section of a driving voltage line and a first data connecting component.

[0097] Reference Figure 4 and Figure 5 , the driving voltage line 172 and the first data connection member 71 are separated from each other and are located above the interlayer insulating film 160. That is, the driving voltage line 172 and the first data connection member 71 are located in the same layer.

[0098] The driving voltage line 172 and the first data connection member 71 include left inclined surfaces 172L and 71L and right inclined surfaces 172R and 71R, respectively. The left side and the right side refer to the left side and the right side based on the center of the driving voltage line 172 and the first data connection member 71 on the plane. The area of ​​the left inclined surface 172L of the driving voltage line 172 is wider than the area of ​​the right inclined surface 172R. The area of ​​the left inclined surface 71L of the first data connection member 71 is wider than the area of ​​the right inclined surface 71R.

[0099] In the prior art, the area of ​​the left inclined surface 172L and the area of ​​the right inclined surface 172R of the driving voltage line 172 are the same, and the area of ​​the left inclined surface 71L and the area of ​​the right inclined surface 71R of the first data connecting member 71 are the same. In this case, the area of ​​the portion of the left inclined surface 172L of the driving voltage line 172 overlapping the opening 351 of the partition wall 350 may be different from the area of ​​the portion of the right inclined surface 172R of the driving voltage line 172 overlapping the opening 351. In addition, the area of ​​the portion of the left inclined surface 71L of the first data connecting member 71 overlapping the opening 351 of the partition wall 350 may be different from the area of ​​the portion of the right inclined surface 71R of the first data connecting member 71 overlapping the opening 351. As a result, the sum of the areas of the left inclined surface of the concavo-convex shape of the diode first electrode 191 overlapping the opening 351 of the partition wall 350 is different from the sum of the areas of the right inclined surface, so that the amounts of light reflected from the left and right inclined surfaces of the concavo-convex shape of the diode first electrode 191 are different. As a result, color changes may occur depending on the left and right viewing angles.

[0100] In this embodiment, the driving voltage line 172 and a portion of the first data connection member 71 overlap with the opening 351 of the partition wall 350, and the shape of the opening 351 is a rhombus shape (refer to Figure 2). In the present embodiment, the portion of the left side inclined surface 172L of the driving voltage line 172 overlapping with the opening 351 of the partition wall 350 is represented as the left side inclined surface overlapping portion 172LA, and the portion of the right side inclined surface 172R of the driving voltage line 172 overlapping with the opening 351 is represented as the right side inclined surface overlapping portion 172RA. In addition, the portion of the left side inclined surface 71L of the first data connecting member 71 overlapping with the opening 351 of the partition wall 350 is represented as the left side inclined surface overlapping portion 71LA, and the portion of the right side inclined surface 71R of the first data connecting member 71 overlapping with the opening 351 is represented as the right side inclined surface overlapping portion 71RA. The sum of the area of ​​the left side inclined surface overlapping portion 172LA of the driving voltage line 172 and the area of ​​the left side inclined surface overlapping portion 71LA of the first data connecting member 71 is the same as the sum of the area of ​​the right side inclined surface overlapping portion 172RA of the driving voltage line 172 and the area of ​​the right side inclined surface overlapping portion 71RA of the first data connecting member 71. As a result, the sum of the areas of the left inclined surface of the concavo-convex shape of the diode first electrode 191 overlapping the opening 351 of the partition wall 350 becomes equal to the sum of the areas of the right inclined surface, and thus the amounts of light reflected from the left and right inclined surfaces of the concavo-convex shape of the diode first electrode 191 are equal. As a result, the color change caused by the left and right viewing angles can be reduced.

[0101] In this embodiment, the driving voltage line 172 and the first data connection member 71 are used as examples of the data conductors overlapping the opening 351 of the partition 350, but the present invention is not limited thereto, and other data conductors may overlap the opening 351 of the partition 350. In this case, in order to make the sum of the areas of the left inclined surfaces of the data conductors overlapping the opening 351 of the partition 350 equal to the sum of the areas of the right inclined surfaces of the data conductors overlapping the opening 351, the areas of the left inclined surfaces and the right inclined surfaces of the data conductors may be different.

[0102] Below, refer to Figures 6 to 8 , Figure 2 , Figure 3 as well as Figure 5 , a method for manufacturing a light-emitting display device according to an embodiment of the present invention is described.

[0103] Figures 6 to 8 FIG. 1 is a diagram schematically showing an example of a method for manufacturing a light-emitting display device according to an embodiment of the present invention.

[0104] Reference Figure 2 and Figure 3A buffer layer 112, a semiconductor layer 130, a first gate insulating film 141, a first gate conductor, a second gate insulating film 142, a second gate conductor, and an interlayer insulating film 160 are sequentially formed above the insulating substrate 110. The first gate conductor may include a first gate electrode 155, a first scan line 151, a second scan line 152, and a light emitting control line 153, and the second gate conductor may include a storage line 126, an initialization voltage line 127, and a parasitic capacitance control pattern 79.

[0105] Reference Figure 6 A data metal layer 170 is formed on the interlayer insulating film 160, and a photosensitive film 50 is formed on the data metal layer 170, and then light is irradiated to the photosensitive film 50 using a photomask 300. The photomask 300 is a half-tone mask including a light-transmitting portion 301 for transmitting light, a light-shielding portion 302 for shielding light, and a semi-light-transmitting portion 303 for transmitting a portion of light.

[0106] Reference Figure 7 As the photosensitive film 50 is irradiated with light using the photomask 300, a first photosensitive film pattern 55 is formed above the data metal layer 170. The first photosensitive film pattern 55 includes a first portion 55a and a second portion 55b thinner than the first portion 55a. The first portion 55a is a portion corresponding to the light-transmitting portion 301 of the photomask 300, and the second portion 55b is a portion corresponding to the semi-light-transmitting portion 303 of the photomask 300.

[0107] Reference Figure 8 After the data metal layer 170 is etched using the first photosensitive film pattern 55 as a mask to form the preliminary data conductor 172a, the first photosensitive film pattern 55 is ashed to form the second photosensitive film pattern 57. If the first photosensitive film pattern 55 is ashed, the second portion 55b is removed and the thickness of the first portion 55a is reduced. At this time, the area of ​​the left inclined surface of the preliminary data conductor 172a is the same as the area of ​​the right inclined surface.

[0108] Reference Figure 5 , the preliminary data conductor 172a is etched using the second photosensitive film pattern 57 as a mask, thereby forming a data conductor including a driving voltage line 172 and a first data connection member 71. At this time, the data conductor may further include a data line 171, a second data connection member 72, and a third data connection member 73 (refer to Figure 2 and Figure 3 ).

[0109] Refer again Figure 2 and Figure 3After forming a protective film 180 on the data conductor and forming a diode first electrode 191 on the protective film 180, a partition wall 350 having an opening 351 overlapping with the diode first electrode 191 is formed on the protective film 180 and the diode first electrode 191. Next, a light emitting layer 370 is formed on the diode first electrode 191 in the opening 351, a diode second electrode 270 is formed on the light emitting layer 370 and the partition wall 350, and then a sealing layer 400 is formed on the diode second electrode 270.

[0110] In addition, in order to make the sum of the area of ​​the left side inclined surface overlap portion 172LA of the driving voltage line 172 and the area of ​​the left side inclined surface overlap portion 71LA of the first data connection member 71 equal to the sum of the area of ​​the right side inclined surface overlap portion 172RA of the driving voltage line 172 and the area of ​​the right side inclined surface overlap portion 71RA of the first data connection member 71, various structures can be adopted. Fig. 9 and Fig.10 Provide explanation.

[0111] Fig. 9 and Fig.10 Each of them schematically shows an example of a plane of a driving voltage line and a first data connecting member of a light emitting display device according to an embodiment of the present invention.

[0112] Reference Fig. 9 ,and Figure 2 When comparing the light emitting display devices shown in the figure, except for the shapes of the driving voltage lines and the first data connecting components, the rest of the structures are the same.

[0113] The driving voltage line 172 and the first data connection member 71 include left inclined surfaces 172L and 71L and right inclined surfaces 172R and 71R, respectively. The left inclined surface 172L of the driving voltage line 172 has a sawtooth shape in a plane. In addition, the left inclined surface 71L of the first data connection member 71 has a sawtooth shape in a plane. Therefore, the area of ​​the left inclined surface 172L of the driving voltage line 172 is wider than the area of ​​the right inclined surface 172R, and the area of ​​the left inclined surface 71L of the first data connection member 71 is wider than the area of ​​the right inclined surface 71R.

[0114] Thus, the sum of the area of ​​the left side inclined surface overlapping portion 172LA of the driving voltage line 172, which is the portion of the left side inclined surface 172L of the driving voltage line 172 overlapping the opening 351 of the partition wall 350, and the area of ​​the left side inclined surface overlapping portion 71LA of the first data connecting member 71, which is the portion of the left side inclined surface 71L of the first data connecting member 71 overlapping the opening 351 of the partition wall 350, is equal to the sum of the area of ​​the right side inclined surface overlapping portion 172RA of the driving voltage line 172, which is the portion of the right side inclined surface 172R of the driving voltage line 172 overlapping the opening 351 of the partition wall 350, and the area of ​​the right side inclined surface overlapping portion 71RA of the first data connecting member 71, which is the portion of the right side inclined surface 71R of the first data connecting member 71 overlapping the opening 351 of the partition wall 350.

[0115] Reference Fig.10 , in with Figure 2 When comparing the light emitting display devices shown in the figure, except for the shapes of the driving voltage lines and the first data connecting components, the rest of the structures are the same.

[0116] The driving voltage line 172 and the first data connection member 71 include left inclined surfaces 172L and 71L and right inclined surfaces 172R and 71R, respectively.

[0117] The area of ​​the left inclined surface 172L of the driving voltage line 172 is the same as the area of ​​the right inclined surface 172R.

[0118] and Figure 2 Compared with the light emitting display device shown in FIG. 1 , the length of the right side line of the first data connecting member 71 on the plane is shortened, so that the area of ​​the right inclined surface 71R is smaller than the area of ​​the left inclined surface 71L.

[0119] Thus, the sum of the area of ​​the left side inclined surface overlapping portion 172LA of the driving voltage line 172, which is the portion of the left side inclined surface 172L of the driving voltage line 172 overlapping the opening 351 of the partition wall 350, and the area of ​​the left side inclined surface overlapping portion 71LA of the first data connecting member 71, which is the portion of the left side inclined surface 71L of the first data connecting member 71 overlapping the opening 351 of the partition wall 350, is equal to the sum of the area of ​​the right side inclined surface overlapping portion 172RA of the driving voltage line 172, which is the portion of the right side inclined surface 172R of the driving voltage line 172 overlapping the opening 351 of the partition wall 350, and the area of ​​the right side inclined surface overlapping portion 71RA of the first data connecting member 71, which is the portion of the right side inclined surface 71R of the first data connecting member 71 overlapping the opening 351 of the partition wall 350.

[0120] The embodiments of the present invention are described in detail above; however, the protection scope of the present invention is not limited thereto, and various modifications and improvements implemented by those skilled in the art using the basic concepts of the present invention defined in the attached claims also fall within the protection scope of the present invention.

Claims

1. A light-emitting display device, include: Insulating substrate; A semiconductor layer, located above the insulating substrate; A first gate insulating film, located above the semiconductor layer; a first gate conductor, located above the first gate insulating film; a second gate insulating film, located above the first gate conductor; a second gate conductor, located above the second gate insulating film; an interlayer insulating film, located above the second gate conductor; A data conductor, located above the interlayer insulating film; A protective film, located above the data conductor; A first electrode of the diode is located above the protective film; A partition wall, located above the first electrode of the diode and the protective film, and having an opening overlapping with the first electrode of the diode; a light emitting layer, located above the first electrode of the diode in the opening; as well as The second electrode of the diode is located above the light emitting layer and the partition wall. The data conductor includes a left inclined surface located on the left side of the plane and a right inclined surface located on the right side of the plane. The area of ​​the left inclined surface is different from the area of ​​the right inclined surface, The left side inclined surface includes a left side inclined surface overlapping portion overlapping with the opening portion, The right side inclined surface includes a right side inclined surface overlapping portion overlapping with the opening portion, The sum of the areas of the overlapping portions of the left inclined surfaces is the same as the sum of the areas of the overlapping portions of the right inclined surfaces.

2. The light-emitting display device according to claim 1, in, The area of ​​the left inclined surface is wider than the area of ​​the right inclined surface.

3. The light-emitting display device according to claim 1, in, The left inclined surface has a sawtooth shape in a plane.

4. The light-emitting display device according to claim 1, in, The protective film has projections and depressions formed on an upper surface.

5. The light-emitting display device according to claim 4, in, The diode first electrode has a concavo-convex shape.

6. The light-emitting display device according to claim 5, in, The concavo-convex shape of the diode first electrode overlaps with the opening.

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