Voltage ride-through characteristics simulation system based on dynamic reactive power compensation device
The simulation system addresses the challenge of simulating dynamic reactive power compensation devices' transient characteristics, improving voltage and frequency stability by generating precise reactive current commands during voltage faults.
Patent Information
- Application Number
- CN202110789655.1
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Filing Date
- 2021-07-13
- Publication Date
- 2024-12-31
- Estimated Expiration
- 2041-07-13
AI Technical Summary
Existing models fail to accurately simulate the electromagnetic transient characteristics of dynamic reactive power compensation devices, leading to inadequate reactive current output during voltage faults, which affects voltage and frequency stability in power systems.
A voltage ride-through characteristic simulation system that includes a ride-through state selection circuit and current command output circuit to generate high and low ride-through trigger signals, and reactive current commands based on threshold values and sequence signals, simulating the dynamic reactive power compensation device's behavior under voltage faults.
The system effectively guides the reactive current output of dynamic reactive compensation devices, enhancing voltage and frequency stability by accurately simulating transient characteristics and ensuring appropriate reactive current generation during power system voltage faults.
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Figure CN113725924B_ABST
Abstract
Description
Technical Field
[0001] The present application relates to the field of power supply equipment characteristic simulation, and specifically to a voltage ride-through characteristic simulation system based on a dynamic reactive power compensation device. Background Art
[0002] With the development of power systems, people's requirements for the grid connection of renewable energy power stations are increasing, and the requirements for equipping renewable energy power stations with dynamic reactive power compensation devices are also increasing. In this context, obtaining the electromagnetic transient model of the dynamic reactive power compensation device has become an important task in the field of power system simulation.
[0003] The voltage ride-through capability of the dynamic VAR compensation device is of great significance to the voltage stability and frequency stability of the power system. Therefore, modeling the electromagnetic transient characteristics of the dynamic VAR compensation device under voltage ride-through conditions is a very critical task.
[0004] In the prior art, when modeling the voltage ride-through characteristics of dynamic reactive power compensation devices, principle models and generalized models are mainly used, which can be achieved by collecting the input voltage and output current of the dynamic reactive power compensation device. However, due to the complexity and diversity of the physical structure and control strategy of the dynamic reactive power compensation device, the electromagnetic transient characteristics of the dynamic reactive power compensation devices equipped for different wind turbines vary greatly. The principle model and the generalized model cannot accurately reflect the electromagnetic transient characteristics of all types of dynamic reactive power compensation devices. Summary of the invention
[0005] In response to the problems in the prior art, the present application provides a voltage ride-through characteristic simulation system based on a dynamic reactive power compensation device, which can simulate the electromagnetic transient characteristics of the dynamic reactive power compensation device under voltage ride-through conditions.
[0006] In order to solve the above technical problems, this application provides the following technical solutions:
[0007] The present application provides a voltage ride-through characteristic simulation system based on a dynamic reactive power compensation device, comprising:
[0008] A ride-through state selection circuit receives a terminal voltage signal of the dynamic reactive power compensation device, and generates a high-voltage ride-through trigger signal and a low-voltage ride-through trigger signal according to a preset high-voltage ride-through threshold value, a low-voltage ride-through threshold value and the terminal voltage signal;
[0009] The current command output circuit receives the high-throughput trigger signal, the low-throughput trigger signal, the terminal voltage positive-sequence signal of the dynamic reactive compensation device, the terminal voltage negative-sequence signal of the dynamic reactive compensation device and the terminal voltage signal, and generates a reactive current command value according to a preset high-voltage reactive current calculation ratio, a low-voltage reactive current calculation ratio, a high-voltage calculation standard value, a low-voltage calculation standard value, the terminal voltage positive-sequence signal of the dynamic reactive compensation device, the terminal voltage negative-sequence signal of the dynamic reactive compensation device, the terminal voltage signal, the high-throughput trigger signal and the low-throughput trigger signal.
[0010] Furthermore, the crossing state selection circuit includes:
[0011] a first comparison circuit, receiving the terminal voltage signal, and generating a first comparison signal according to the terminal voltage signal and the high voltage crossing threshold value;
[0012] a second comparison circuit, receiving the terminal voltage signal, and generating a second comparison signal according to the terminal voltage signal and the low voltage crossing threshold value;
[0013] a first adder, receiving the first comparison signal and the second comparison signal, and generating a first addition signal as the low-wear trigger signal according to the first comparison signal and the second comparison signal;
[0014] A multiplier receives the first addition signal and generates the high-throughput trigger signal according to the first addition signal.
[0015] Furthermore, the current command output circuit includes:
[0016] A high-throughput current command output circuit receives the high-throughput trigger signal, the terminal voltage positive-sequence signal, and the terminal voltage negative-sequence signal, and generates a high-throughput reactive current command value according to the high-voltage reactive current calculation ratio, the high voltage calculation standard value, the high-throughput trigger signal, the terminal voltage positive-sequence signal of the dynamic reactive compensation device, and the terminal voltage negative-sequence signal of the dynamic reactive compensation device;
[0017] A low wear current command output circuit receives the low wear trigger signal and the terminal voltage signal, and generates a low wear reactive current command value according to the low wear trigger signal, the low voltage reactive current calculation ratio, the low voltage calculation standard value and the terminal voltage signal;
[0018] The second adder receives the high-throughput reactive current command value and the low-throughput reactive current command value, and generates the reactive current command value according to the high-throughput reactive current command value and the low-throughput reactive current command value.
[0019] Furthermore, the high penetration current instruction output circuit includes:
[0020] a third adder, receiving the terminal voltage positive sequence signal, the terminal voltage negative sequence signal and the high voltage calculation standard value, and generating a second addition signal according to the terminal voltage positive sequence signal, the terminal voltage negative sequence signal and the high voltage calculation standard value;
[0021] a first multiplier receiving the second addition signal and the high voltage reactive current calculation ratio, and generating a first multiplication signal according to the second addition signal and the high voltage reactive current calculation ratio;
[0022] a second multiplier, receiving the first multiplication signal and the high-penetration trigger signal, and generating a second multiplication signal according to the first multiplication signal and the high-penetration trigger signal;
[0023] a fourth adder, receiving a reactive current reference value and a reactive current measurement value, and generating a third addition signal according to the reactive current reference value and the reactive current measurement value;
[0024] a third multiplier, receiving the third addition signal and generating a third multiplication signal according to the third addition signal;
[0025] a first PI controller, receiving the third multiplication signal, and generating a first control signal according to the third multiplication signal;
[0026] The first signal selection circuit receives the high-throughput trigger signal, the third multiplication signal and the first control signal, and generates the high-throughput reactive current command value according to the high-throughput trigger signal, the third multiplication signal and the first control signal.
[0027] Furthermore, the low penetration current instruction output circuit includes:
[0028] a fifth adder, receiving the low voltage calculation standard value and the terminal voltage signal, and generating a fourth addition signal according to the low voltage calculation standard value and the terminal voltage signal;
[0029] a fourth multiplier, receiving the fourth addition signal and the low voltage reactive current calculation ratio, and generating a fourth multiplication signal according to the fourth addition signal and the low voltage reactive current calculation ratio;
[0030] a fifth multiplier, receiving the fourth multiplication signal and the low-wear trigger signal, and generating a fifth multiplication signal according to the fourth multiplication signal and the low-wear trigger signal;
[0031] a sixth adder, receiving the reactive current reference value and the reactive current measurement value, and generating a fifth addition signal according to the reactive current reference value and the reactive current measurement value;
[0032] a sixth multiplier, receiving the fifth addition signal and generating a sixth multiplication signal according to the fifth addition signal;
[0033] a second PI controller, receiving the sixth multiplication signal, and generating a second control signal according to the sixth multiplication signal;
[0034] The second signal selection circuit receives the low-throughput trigger signal, the fifth multiplication signal and the second control signal to generate the low-throughput reactive current command value.
[0035] Further, when the amplitude of the terminal voltage signal is greater than or equal to the high voltage crossing threshold value, the first comparison circuit outputs a -1 signal as the first comparison signal; when the amplitude of the terminal voltage signal is less than the high voltage crossing threshold value, the first comparison circuit outputs a 0 signal as the first comparison signal.
[0036] Furthermore, when the amplitude of the terminal voltage signal is less than the low voltage crossing threshold value, the second comparison circuit outputs a 1 signal as the second comparison signal; when the amplitude of the terminal voltage signal is greater than or equal to the low voltage crossing threshold value, the second comparison circuit outputs a 0 signal as the second comparison signal.
[0037] Further, when the high-penetration trigger signal is a 1 signal, the first signal selection circuit outputs the second multiplication signal as the high-penetration reactive current command value; when the high-penetration trigger signal is a 0 signal, the first signal selection circuit outputs the first control signal as the high-penetration reactive current command value.
[0038] Further, when the low-through trigger signal is a 1 signal, the second signal selection circuit outputs the fifth multiplication signal as the low-through reactive current command value; when the low-through trigger signal is a 0 signal, the second signal selection circuit outputs the second control signal as the low-through reactive current command value.
[0039] In response to the problems in the prior art, the voltage crossing characteristic simulation system based on the dynamic reactive compensation device provided in the present application can simulate the electromagnetic transient characteristics of the dynamic reactive compensation device under the voltage crossing situation, and can be used to analyze the reactive characteristics of the dynamic reactive compensation device when a voltage fault occurs in the power system, and guide the reactive current output of the dynamic reactive compensation device when a voltage fault occurs in the power system, which has positive significance for ensuring the voltage stability and frequency stability of the power system. BRIEF DESCRIPTION OF THE DRAWINGS
[0040] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.
[0041] Figure 1 Application scenario diagram of the voltage ride-through characteristic simulation system based on the dynamic reactive power compensation device in the embodiment of the present application;
[0042] Figure 2 This is a structural diagram of a voltage ride-through characteristic simulation system based on a dynamic reactive power compensation device in an embodiment of the present application;
[0043] Figure 3 This is a structural diagram of a voltage ride-through trigger circuit in an embodiment of the present application;
[0044] Figure 4 It is a simulation schematic diagram in the embodiment of the present application. DETAILED DESCRIPTION
[0045] The following will be combined with the drawings in the embodiments of the present application to clearly and completely describe the technical solutions in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of this application.
[0046] See also Figure 1 In order to simulate the electromagnetic transient characteristics of a dynamic reactive power compensation device under a voltage ride-through condition, the present application provides a voltage ride-through characteristic simulation system based on a dynamic reactive power compensation device.
[0047] It is understandable that when a voltage fault occurs in the power system, the generator set may suffer from voltage oscillation and frequency oscillation, which will affect the normal operation of the generator set. In order to alleviate the above oscillation, it is usually necessary to equip the generator set with a dynamic reactive power compensation device. The dynamic reactive power compensation device can output dynamically changing reactive current to effectively improve the power factor and output of the generator set, improve the power quality, reduce line loss, and achieve the purpose of energy saving and consumption reduction.
[0048] However, in actual applications, the reactive current output by the dynamic reactive compensation device cannot completely offset the impact of voltage oscillation and frequency oscillation on the power factor and output of the generator set, because considering various environmental factors, the reactive current output by the dynamic reactive compensation device cannot change in real time following the voltage oscillation and frequency oscillation. Sometimes the reactive current output by the dynamic reactive compensation device is too large, and the compensation is excessive, resulting in a waste of electric energy; sometimes the reactive current output by the dynamic reactive compensation device is too small to offset the impact of the oscillation.
[0049] To this end, the present application intends to simulate the electromagnetic transient characteristics of the dynamic reactive compensation device under voltage crossing conditions, so as to determine the size of the reactive current that the dynamic reactive compensation device needs to output when a voltage fault occurs in the power generation system, and then guide the dynamic reactive compensation device to output a reactive current of appropriate size under the action of a controlled power supply.
[0050] It should be noted that the dynamic reactive power compensation device in the embodiment of the present application has voltage ride through capability. The so-called voltage ride through capability refers to the ability of the power equipment to continue to operate without disconnecting from the power grid when its terminal voltage rises to a certain value, and even to provide a certain amount of reactive power to the power grid to help the power grid restore voltage.
[0051] Based on the above application scenario, see Figure 1 The input end of the voltage ride-through characteristic simulation system based on the dynamic reactive compensation device provided in the present application can be connected to the voltage output end of the dynamic reactive compensation device to receive the terminal voltage signal Vabc_Bstatcom_Mag output by the dynamic reactive compensation device; the output end of the system can be connected to the controlled power supply end of the dynamic reactive compensation device so that the reactive compensation device can output a reactive current of appropriate size under the action of the controlled power supply.
[0052] Specifically, see Figure 2 The voltage ride-through characteristic simulation system based on the dynamic reactive power compensation device provided in the present application includes: a ride-through state selection circuit and a current command output circuit.
[0053] Among them, the crossing state selection circuit receives the terminal voltage signal Vabc_Bstatcom_Mag of the dynamic reactive power compensation device, and generates a high crossing trigger signal HVRT_dur and a low crossing trigger signal LVRT_dur according to the preset high voltage crossing threshold value Vhigh, the low voltage crossing threshold value Vlow and the terminal voltage signal Vabc_Bstatcom_Mag; the current command output circuit receives the high crossing trigger signal HVRT_dur, the low crossing trigger signal LVRT_dur, the terminal voltage positive sequence signal Vabc_B690_Mag of the dynamic reactive power compensation device, and the terminal voltage negative sequence signal Vabc_B690_Mag of the dynamic reactive power compensation device. The reactive current command value is generated according to the preset high voltage reactive current calculation ratio, low voltage reactive current calculation ratio, high voltage calculation standard value, low voltage calculation standard value, terminal voltage positive sequence signal Vabc_B690_Mag of the dynamic reactive compensation device, terminal voltage negative sequence signal Vabc_B690_Mag_Neg of the dynamic reactive compensation device, terminal voltage signal Vabc_Bstatcom_Mag, high wear trigger signal HVRT_dur and low wear trigger signal LVRT_dur.
[0054] From the above description, it can be seen that the voltage crossing characteristic simulation system based on the dynamic reactive compensation device provided in the present application can simulate the electromagnetic transient characteristics of the dynamic reactive compensation device under the voltage crossing situation, and can be used to analyze the reactive characteristics of the dynamic reactive compensation device when a voltage fault occurs in the power system, and guide the reactive current output of the dynamic reactive compensation device when a voltage fault occurs in the power system, which has positive significance for ensuring the voltage stability and frequency stability of the power system.
[0055] In one embodiment, see Figure 3 The crossing state selection circuit includes: a comparison circuit 1, a comparison circuit 2, an adder 3 and a multiplier 4.
[0056] Among them, the comparison circuit 1 receives the amplitude Vsvg_mag of the terminal voltage signal Vabc_Bstatcom_Mag, and generates a first comparison signal according to the amplitude Vsvg_mag of the terminal voltage signal Vabc_Bstatcom_Mag and the high voltage crossing threshold value Vhigh; the comparison circuit 2 receives the amplitude Vsvg_mag of the terminal voltage signal Vabc_Bstatcom_Mag, and generates a second comparison signal according to the amplitude Vsvg_mag of the terminal voltage signal Vabc_Bstatcom_Mag and the low voltage crossing threshold value Vlow; the adder 3 receives the first comparison signal and the second comparison signal, and generates a first addition signal as a low-throughput trigger signal LVRT_dur according to the first comparison signal and the second comparison signal; the multiplier 4 receives the first addition signal, and generates a high-throughput trigger signal HVRT_dur according to the first addition signal.
[0057] Specifically, the working principle of the crossing state selection circuit is as follows:
[0058] First, the voltage amplitude Vsvg_mag at the end of the dynamic reactive power compensation device is input to the comparison circuit 1 and compared with the high voltage crossing threshold value Vhigh; if Vsvg_mag is greater than Vhigh, the comparison circuit 1 outputs a -1 signal as the first comparison signal; otherwise, the comparison circuit 1 outputs a 0 signal as the first comparison signal. At the same time, the voltage amplitude (Vsvg_mag) at the end of the dynamic reactive power compensation device is input to the comparison circuit 2 and compared with the low voltage crossing threshold value Vlow; if Vsvg_mag is less than Vlow, the comparison circuit 2 outputs a 1 signal as the second comparison signal; otherwise, the comparison circuit 2 outputs a 0 signal as the second comparison signal.
[0059] Then, the adder 3 adds the first comparison signal and the second comparison signal respectively output by the comparison circuit 1 and the comparison circuit 2 to obtain a first addition signal. The first addition signal can be output as a low wear trigger signal LVRT_dur. The multiplier 4 receives the first addition signal and multiplies the first addition signal by -1 to output as a high wear trigger signal HVRT_durHVRT_dur.
[0060] From the above description, it can be seen that the voltage ride-through characteristic simulation system based on the dynamic reactive power compensation device provided in the present application can generate a high ride-through trigger signal and a low ride-through trigger signal by using a ride-through state selection circuit.
[0061] In one embodiment, see Figure 3 The current command output circuit includes: a high-throughput current command output circuit, a low-throughput current command output circuit and a second adder.
[0062] Among them, the high penetration current command output circuit receives the high penetration trigger signal HVRT_dur, the terminal voltage positive sequence signal Vabc_B690_Mag and the terminal voltage negative sequence signal Vabc_B690_Mag_Neg, and generates a high penetration reactive current according to the high voltage reactive current calculation ratio, the high voltage calculation standard value, the high penetration trigger signal HVRT_dur, the terminal voltage positive sequence signal Vabc_B690_Mag of the dynamic reactive compensation device and the terminal voltage negative sequence signal Vabc_B690_Mag_Neg of the dynamic reactive compensation device. The low-penetration current command output circuit receives the low-penetration trigger signal LVRT_dur and the terminal voltage signal Vabc_Bstatcom_Mag, and generates a low-penetration reactive current command value according to the low-penetration trigger signal LVRT_dur, the low-voltage reactive current calculation ratio, the low-voltage calculation standard value and the terminal voltage signal Vabc_Bstatcom_Mag; the second adder receives the high-penetration reactive current command value and the low-penetration reactive current command value, and generates a reactive current command value according to the high-penetration reactive current command value and the low-penetration reactive current command value.
[0063] It can be seen from the above description that the voltage ride-through characteristic simulation system based on the dynamic reactive power compensation device provided in the present application can generate a reactive current command value by using a current command output circuit.
[0064] In one embodiment, the high penetration current command output circuit includes: an adder 5, a multiplier 6, a multiplier 7, an adder 8, a multiplier 9, a PI controller 10 and a signal selection circuit 11.
[0065] Among them, the adder 5 receives the terminal voltage positive sequence signal Vabc_B690_Mag, the terminal voltage negative sequence signal Vabc_B690_Mag_Neg and the high voltage calculation standard value HVRT_u0, and generates a second addition signal according to the terminal voltage positive sequence signal Vabc_B690_Mag, the terminal voltage negative sequence signal Vabc_B690_Mag_Neg and the high voltage calculation standard value HVRT_u0; the multiplier 6 receives the second addition signal and the high voltage reactive current calculation ratio HVRT_iq_cof, and generates a first multiplication signal according to the second addition signal and the high voltage reactive current calculation ratio HVRT_iq_cof; the multiplier 7 receives the first multiplication signal and the high wear trigger signal HVRT_du r, and generates a second multiplication signal according to the first multiplication signal and the high wear trigger signal HVRT_dur; the adder 8 receives the reactive current reference value Qref and the reactive current measurement value Qmes, and generates a third addition signal according to the reactive current reference value Qref and the reactive current measurement value Qmes; the multiplier 9 receives the third addition signal, and generates a third multiplication signal according to the third addition signal; the PI controller 10 receives the third multiplication signal, and generates a first control signal according to the third multiplication signal; the signal selection circuit 11 receives the high wear trigger signal HVRT_dur, the third multiplication signal and the first control signal, and generates a high wear reactive current command value according to the high wear trigger signal HVRT_dur, the third multiplication signal and the first control signal.
[0066] The working principle of the high current command output circuit is as follows:
[0067] First, when the high wear trigger signal HVRT_dur is greater than or equal to 1, the adder 5 subtracts the high voltage calculation standard value HVRT_u0 (preset constant) from the sum of the terminal voltage positive sequence signal and the negative sequence signal (Vabc_B690_Mag+Vabc_B690_Mag_Neg) to obtain a second addition signal. The second addition signal is input to the multiplier 6 and multiplied with the high voltage reactive current calculation ratio HVRT_iq_cof (preset constant) to obtain a first multiplication signal. Then continue to input the first multiplication signal to the multiplier 7, multiply it with the high wear trigger signal HVRT_dur, and obtain a second multiplication signal.
[0068] Then, when the high wear trigger signal HVRT_dur is greater than or equal to 1, the signal selection circuit 11 outputs the second multiplication signal as the high wear reactive current command value. When HVRT_dur is less than 1, the signal selection circuit 11 outputs the first control signal output by the PI controller 10 as the high wear reactive current command value.
[0069] Here, the output of the PI controller 10 is the reactive current given value of the dynamic reactive compensation device in the steady-state operation mode. The specific calculation method is as follows: subtract the preset reactive current reference value Qref from the reactive current measurement value Qmes emitted by the dynamic reactive compensation device in real time, and then input it into the multiplier 9 (the multiplication coefficient of the multiplier 9 can be changed according to different working conditions. In the embodiment of the present application, using "1" as the multiplication coefficient is a commonly used value-taking method, but the present application is not limited to this. Finally, the output of the multiplier 9 is used as the input of the PI controller 10.
[0070] From the above description, it can be seen that the voltage ride-through characteristic simulation system based on the dynamic reactive power compensation device provided in the present application can generate a high-throughput reactive current command value by using a high-throughput current command output circuit.
[0071] In one embodiment, the low penetration current command output circuit includes: an adder 12 , a multiplier 13 , a multiplier 14 , an adder 15 , a multiplier 16 , a PI controller 17 and a signal selection circuit 18 .
[0072] Among them, the adder 12 receives the low voltage calculation standard value LVRT_u0 and the terminal voltage signal Vabc_Bstatcom_Mag, and generates a fourth addition signal according to the low voltage calculation standard value LVRT_u0 and the terminal voltage signal Vabc_Bstatcom_Mag; the multiplier 13 receives the fourth addition signal and the low voltage reactive current calculation ratio LVRT_iq_cof, and generates a fourth multiplication signal according to the fourth addition signal and the low voltage reactive current calculation ratio LVRT_iq_cof; the multiplier 14 receives the fourth multiplication signal and the low wear trigger signal LVRT_dur, and generates a fourth multiplication signal according to the fourth addition signal and the low voltage reactive current calculation ratio LVRT_iq_cof; The four multiplication signals and the low wear trigger signal LVRT_dur generate a fifth multiplication signal; the adder 15 receives the reactive current reference value Qref and the reactive current measurement value Qmes, and generates a fifth addition signal according to the reactive current reference value Qref and the reactive current measurement value Qmes; the multiplier 16 receives the fifth addition signal, and generates a sixth multiplication signal according to the fifth addition signal; the PI controller 17 receives the sixth multiplication signal, and generates a second control signal according to the sixth multiplication signal; the signal selection circuit 18 receives the low wear trigger signal LVRT_dur, the fifth multiplication signal and the second control signal to generate a low wear reactive current command value.
[0073] The working principle of the low-throw current command output circuit is as follows:
[0074] First, when the low-throughput trigger signal LVRT_dur is greater than or equal to 1, the adder 12 calculates the difference between the terminal voltage Vabc_Bstatcom_Mag of the dynamic reactive compensation device and the voltage calculation standard value LVRT_u0 (a preset constant); the difference between the terminal voltage Vabc_Bstatcom_Mag of the dynamic reactive compensation device and the voltage calculation standard value LVRT_u0 is input to the multiplier 13, and the multiplier 13 multiplies the difference between the terminal voltage Vabc_Bstatcom_Mag of the dynamic reactive compensation device and the voltage calculation standard value LVRT_u0 by the reactive current calculation ratio LVRT_iq_cof (a preset constant); the multiplier 14 multiplies the product with the low-throughput trigger signal LVRT_dur to obtain the output of the multiplier 14.
[0075] Then, when the low wear trigger signal LVRT_dur is greater than or equal to 1, the signal selection circuit 18 outputs the output result of the multiplier 14, that is, the fifth multiplication signal; when the low wear trigger signal LVRT_dur is less than 1, the signal selection circuit 18 outputs the output result of the PI controller 17, that is, the second control signal.
[0076] Here, the output of the PI controller 17 is the reactive current given value of the dynamic reactive compensation device in the steady-state operation mode. The specific calculation method is as follows: subtract the preset reactive current reference value Qref from the reactive current measurement value Qmes emitted by the dynamic reactive compensation device in real time, and then input it into the multiplier 16 (the multiplication coefficient of the multiplier 16 can be changed according to different working conditions. In the embodiment of the present application, using "1" as the multiplication coefficient is a commonly used value-taking method, but the present application is not limited to this. Finally, the output of the multiplier 16 is used as the input of the PI controller 17.
[0077] From the above description, it can be seen that the voltage ride-through characteristic simulation system based on the dynamic reactive power compensation device provided in the present application can generate a low ride-through reactive current command value by using a low ride-through current command output circuit.
[0078] Specifically, in one embodiment, when the amplitude of the terminal voltage signal Vabc_Bstatcom_Mag is greater than or equal to the high voltage crossing threshold value Vhigh, the comparison circuit 1 outputs a -1 signal as the first comparison signal; when the amplitude of the terminal voltage signal Vabc_Bstatcom_Mag is less than the high voltage crossing threshold value Vhigh, the comparison circuit 1 outputs a 0 signal as the first comparison signal.
[0079] Specifically, in one embodiment, when the amplitude of the terminal voltage signal Vabc_Bstatcom_Mag is less than the low voltage crossing threshold value Vlow, the comparison circuit 2 outputs a 1 signal as the second comparison signal; when the amplitude of the terminal voltage signal Vabc_Bstatcom_Mag is greater than or equal to the low voltage crossing threshold value Vlow, the comparison circuit 2 outputs a 0 signal as the second comparison signal.
[0080] Specifically, in one embodiment, when the high-penetration trigger signal HVRT_dur is a 1 signal, the signal selection circuit 11 outputs the second multiplication signal as the high-penetration reactive current command value; when the high-penetration trigger signal HVRT_dur is a 0 signal, the signal selection circuit 11 outputs the first control signal as the high-penetration reactive current command value.
[0081] Specifically, in one embodiment, when the low wear trigger signal LVRT_dur is a 1 signal, the second signal selection circuit outputs the fifth multiplication signal as the low wear reactive current command value; when the low wear trigger signal LVRT_dur is a 0 signal, the second signal selection circuit outputs the second control signal as the low wear reactive current command value.
[0082] In order to illustrate the usability of the system provided by the present application, the command value of the output reactive current given by the system provided by the present application is input into the electromagnetic transient simulation system of the infinite power grid (which can be a simulation system built using the Simulink visual simulation tool), and at the same time, a visual simulation tool such as Simulink is used to construct a simulation model of the dynamic reactive compensation device. The simulation model of the dynamic reactive compensation device is constructed according to Figure 1 The connection relationship shown is connected to the electromagnetic transient simulation system.
[0083] A voltage test is carried out in the electromagnetic transient simulation system, and the command value of the reactive current generated by the system provided by the present application is input into the simulation model of the dynamic reactive compensation device in the electromagnetic transient simulation system. The simulation model of the dynamic reactive compensation device can output a reactive current of appropriate magnitude under the control of the command value of the reactive current.
[0084] The reactive current output by the simulation model of the dynamic reactive power compensation device under the control of the reactive current command value is compared with the actual test results obtained by the RT-Lab test based on the actual controller (see the comparison results for details). Figure 4 As shown), it can be seen that the voltage ride-through characteristic simulation system based on the dynamic reactive power compensation device provided by the present application can reproduce the characteristics of the RT-Lab physical controller, and then reproduce the active power characteristics of the actual dynamic reactive power compensation device controller during the voltage ride-through process. The system provided by the present application is available.
[0085] Each embodiment in this specification is described in a progressive manner, and the same or similar parts between the embodiments can be referred to each other, and each embodiment focuses on the differences from other embodiments. In particular, for the embodiment of the device implementation method, since it is basically similar to the method embodiment, the description is relatively simple, and the relevant parts can be referred to the partial description of the method embodiment.
[0086] The above is a description of a specific embodiment of the specification. Other embodiments are within the scope of the appended claims. In some cases, the actions or steps recorded in the claims can be performed in an order different from that in the embodiments and still achieve the desired results. In addition, the processes depicted in the drawings do not necessarily require the specific order or continuous order shown to achieve the desired results. In some embodiments, multitasking and parallel processing are also possible or may be advantageous.
[0087] Although the present specification embodiment provides the method operation steps as described in the embodiment or flow chart, more or less operation steps may be included based on conventional or non-creative means. The order of steps listed in the embodiment is only one way in the order of execution of many steps, and does not represent a unique execution order. The term "include", "comprise" or any other variant thereof is intended to cover non-exclusive inclusion, so that the process, method, product or equipment including a series of elements not only includes those elements, but also includes other elements not clearly listed, or also includes elements inherent to such process, method, product or equipment. In the absence of more restrictions, it is not excluded that there are other identical or equivalent elements in the process, method, product or equipment including the elements.
[0088] Each embodiment in this specification is described in a progressive manner, and the same and similar parts between the embodiments can be referred to each other, and each embodiment focuses on the differences from other embodiments. In particular, for the system embodiment, since it is basically similar to the method embodiment, the description is relatively simple, and the relevant parts can be referred to the partial description of the method embodiment. In the description of this specification, the description of the reference terms "one embodiment", "some embodiments", "example", "specific example", or "some examples" means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the embodiment of this specification. In this specification, the schematic representation of the above terms does not necessarily target the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described can be combined in any one or more embodiments or examples in a suitable manner. In addition, in the absence of contradiction, a person skilled in the art can combine and combine the different embodiments or examples described in this specification and the features of different embodiments or examples.
[0089] The above is only an example of the embodiment of the present specification and is not intended to limit the embodiment of the present specification. For those skilled in the art, the embodiment of the present specification may have various changes and variations. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the embodiment of the present specification shall be included in the scope of the claims of the embodiment of the present specification.
Claims
1. A voltage ride-through characteristics simulation system based on a dynamic reactive power compensation device, characterized in that: include: A ride-through state selection circuit receives a terminal voltage signal of the dynamic reactive power compensation device, and generates a high-voltage ride-through trigger signal and a low-voltage ride-through trigger signal according to a preset high-voltage ride-through threshold value, a low-voltage ride-through threshold value and the terminal voltage signal; a current command output circuit, receiving the high-throughput trigger signal, the low-throughput trigger signal, the terminal voltage positive-sequence signal of the dynamic reactive compensation device, the terminal voltage negative-sequence signal of the dynamic reactive compensation device, and the terminal voltage signal, and generating a reactive current command value according to a preset high-voltage reactive current calculation ratio, a low-voltage reactive current calculation ratio, a high-voltage calculation standard value, a low-voltage calculation standard value, the terminal voltage positive-sequence signal of the dynamic reactive compensation device, the terminal voltage negative-sequence signal of the dynamic reactive compensation device, the terminal voltage signal, the high-throughput trigger signal, and the low-throughput trigger signal; Wherein, the crossing state selection circuit comprises: a first comparison circuit, receiving the terminal voltage signal, and generating a first comparison signal according to the terminal voltage signal and the high voltage crossing threshold value; a second comparison circuit, receiving the terminal voltage signal, and generating a second comparison signal according to the terminal voltage signal and the low voltage crossing threshold value; a first adder, receiving the first comparison signal and the second comparison signal, and generating a first addition signal as the low-wear trigger signal according to the first comparison signal and the second comparison signal; a multiplier, receiving the first addition signal, and generating the high-penetration trigger signal according to the first addition signal; Wherein, the current instruction output circuit comprises: A high-throughput current command output circuit receives the high-throughput trigger signal, the terminal voltage positive-sequence signal, and the terminal voltage negative-sequence signal, and generates a high-throughput reactive current command value according to the high-voltage reactive current calculation ratio, the high voltage calculation standard value, the high-throughput trigger signal, the terminal voltage positive-sequence signal of the dynamic reactive compensation device, and the terminal voltage negative-sequence signal of the dynamic reactive compensation device; A low wear current command output circuit receives the low wear trigger signal and the terminal voltage signal, and generates a low wear reactive current command value according to the low wear trigger signal, the low voltage reactive current calculation ratio, the low voltage calculation standard value and the terminal voltage signal; The second adder receives the high-throughput reactive current command value and the low-throughput reactive current command value, and generates the reactive current command value according to the high-throughput reactive current command value and the low-throughput reactive current command value.
2. The voltage ride-through characteristics simulation system based on a dynamic reactive power compensation device according to claim 1 is characterized in that: The high penetration current instruction output circuit comprises: a third adder, receiving the terminal voltage positive sequence signal, the terminal voltage negative sequence signal and the high voltage calculation standard value, and generating a second addition signal according to the terminal voltage positive sequence signal, the terminal voltage negative sequence signal and the high voltage calculation standard value; a first multiplier receiving the second addition signal and the high voltage reactive current calculation ratio, and generating a first multiplication signal according to the second addition signal and the high voltage reactive current calculation ratio; a second multiplier, receiving the first multiplication signal and the high-penetration trigger signal, and generating a second multiplication signal according to the first multiplication signal and the high-penetration trigger signal; a fourth adder, receiving a reactive current reference value and a reactive current measurement value, and generating a third addition signal according to the reactive current reference value and the reactive current measurement value; a third multiplier, receiving the third addition signal and generating a third multiplication signal according to the third addition signal; a first PI controller, receiving the third multiplication signal, and generating a first control signal according to the third multiplication signal; The first signal selection circuit receives the high-throughput trigger signal, the third multiplication signal and the first control signal, and generates the high-throughput reactive current command value according to the high-throughput trigger signal, the third multiplication signal and the first control signal.
3. The voltage ride-through characteristics simulation system based on a dynamic reactive power compensation device according to claim 2 is characterized in that: The low penetration current instruction output circuit comprises: a fifth adder, receiving the low voltage calculation standard value and the terminal voltage signal, and generating a fourth addition signal according to the low voltage calculation standard value and the terminal voltage signal; a fourth multiplier, receiving the fourth addition signal and the low voltage reactive current calculation ratio, and generating a fourth multiplication signal according to the fourth addition signal and the low voltage reactive current calculation ratio; a fifth multiplier, receiving the fourth multiplication signal and the low-wear trigger signal, and generating a fifth multiplication signal according to the fourth multiplication signal and the low-wear trigger signal; a sixth adder, receiving the reactive current reference value and the reactive current measurement value, and generating a fifth addition signal according to the reactive current reference value and the reactive current measurement value; a sixth multiplier, receiving the fifth addition signal and generating a sixth multiplication signal according to the fifth addition signal; a second PI controller, receiving the sixth multiplication signal, and generating a second control signal according to the sixth multiplication signal; The second signal selection circuit receives the low-throughput trigger signal, the fifth multiplication signal and the second control signal to generate the low-throughput reactive current command value.
4. The voltage ride-through characteristics simulation system based on a dynamic reactive power compensation device according to claim 1 is characterized in that: When the amplitude of the terminal voltage signal is greater than or equal to the high voltage crossing threshold value Vhigh, the first comparison circuit outputs a -1 signal as the first comparison signal; when the amplitude of the terminal voltage signal is less than the high voltage crossing threshold value Vhigh, the first comparison circuit outputs a 0 signal as the first comparison signal.
5. The voltage ride-through characteristics simulation system based on a dynamic reactive power compensation device according to claim 1 is characterized in that: When the amplitude of the terminal voltage signal is less than the low voltage crossing threshold value, the second comparison circuit outputs a 1 signal as the second comparison signal; when the amplitude of the terminal voltage signal is greater than or equal to the low voltage crossing threshold value, the second comparison circuit outputs a 0 signal as the second comparison signal.
6. The voltage ride-through characteristics simulation system based on a dynamic reactive power compensation device according to claim 2 is characterized in that: When the high-penetration trigger signal is a 1 signal, the first signal selection circuit outputs the second multiplication signal as the high-penetration reactive current command value; when the high-penetration trigger signal is a 0 signal, the first signal selection circuit outputs the first control signal as the high-penetration reactive current command value.
7. The voltage ride-through characteristics simulation system based on a dynamic reactive power compensation device according to claim 3 is characterized in that: When the low-through trigger signal is a 1 signal, the second signal selection circuit outputs the fifth multiplication signal as the low-through reactive current command value; when the low-through trigger signal is a 0 signal, the second signal selection circuit outputs the second control signal as the low-through reactive current command value.