Method of forming a semiconductor structure and semiconductor structure

By combining deionized water and strong oxidizing agents in the cleaning process, the problem of damage to the active region caused by the bit line contact region formation process was solved, ensuring the electrical and structural performance of the semiconductor structure and improving the yield and reliability of integrated circuit chips.

CN115172266BActive Publication Date: 2026-08-04CHANGXIN MEMORY TECH INC
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Patent Information

Application Number
CN202210776977.7
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Filing Date
2022-07-04
Publication Date
2026-08-04
Estimated Expiration
2042-07-04

AI Technical Summary

Technical Problem

Existing bit line contact region formation processes are prone to damaging active regions during critical dimension miniaturization, leading to a decline in the electrical and structural performance of semiconductor structures and affecting the yield and reliability of integrated circuit chips.

Method used

Semiconductor structures are processed using a combination of deionized water, a second cleaning, strong oxidizing oxidation, and a third cleaning. This includes cleaning the openings with deionized water, removing the implanted layer and oxide layer with dry cleaning, and forming an oxide layer using strong oxidizing chemicals to protect the target area and prevent damage.

Benefits of technology

It effectively protects the electrical and structural properties of the semiconductor structure, avoids damage to the isolation layer and contamination of the active area caused by wet cleaning, and improves processing accuracy and electrical connection stability.

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Abstract

This disclosure provides a method for forming a semiconductor structure and the semiconductor structure itself, relating to the semiconductor field. The method for forming the semiconductor structure includes: providing a substrate; performing a first etching on the substrate to form an array of openings, the openings exposing a target region of the substrate; performing a first cleaning of the openings with deionized water; depositing a first conductive layer, the first conductive layer at least covering the sidewalls and bottom surface of the openings; doping the first conductive layer covering the bottom surface of the openings to form a first implantation layer; performing a second cleaning of the openings to remove the first implantation layer and the first conductive layer, exposing the target region; oxidizing the exposed target region with a strongly oxidizing chemical substance to form an oxide layer; and performing a third cleaning of the openings to remove the oxide layer. By combining deionized water, the second cleaning, the strongly oxidizing oxidation, and the third cleaning, damage to the semiconductor structure is reduced, ensuring the electrical and structural performance of the semiconductor structure.
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