Optical material stripping agent

By using specific organic solvents, alcohol amine compounds and amide solvents in optical material release agents, the problems of insufficient stability and slow peeling speed of existing photoresist release agents under low and high temperature conditions are solved, and efficient peeling and rapid dissolution of photoresist in liquid crystal flat panel display processing is achieved, which significantly improves processing efficiency.

CN115327869BActive Publication Date: 2025-03-21SHENZHEN ZHAOJI OPTOELECTRONICS CO LTD
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Patent Information

Application Number
CN202210945921.X
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Filing Date
2022-08-08
Publication Date
2025-03-21
Estimated Expiration
2042-08-08

AI Technical Summary

Technical Problem

The existing photoresist release agent has insufficient stability under low and high temperature conditions, and the peeling speed is slow, making it difficult to meet the needs of liquid crystal flat panel display processing.

Method used

A specific organic solvent is used to combine alcohol amine compounds, and an amide solvent is added as a release additive to form a new optical material release agent. The release agent improves the dissolution and impregnation rate of the photoresist through the synergistic action of alcohol amine compounds and amide solvents, significantly increases the peeling rate, and remains stable under low and high temperature conditions.

Benefits of technology

It has achieved efficient dissolution and rapid peeling of various organic photoresist used in the processing of liquid crystal flat panel displays. The peeling speed is significantly improved and the stability is also good at low or high temperatures, which fully meets the needs of liquid crystal flat panel displays.

✦ Generated by Eureka AI based on patent content.

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Abstract

The present application discloses an optical material stripper, wherein the components and mass percentage ratios of the optical material stripper are: 20-25% of an alcohol amine compound, 10-15% of a stripping aid, and the balance is an organic solvent; the stripping aid is an amide solvent; the organic solvent is selected from two or more of N-methylpyrrolidone, piperidine or diethylene glycol ether compounds. The present application has good stability, good stripping effects on various types of photoresists used in the manufacturing process of liquid crystal display devices, fast stripping speed, and extremely weak corrosion to metals, which can effectively improve the manufacturing efficiency of liquid crystal display devices.
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Description

Technical Field

[0001] The present application relates to the technical field of optical material stripping, and in particular to an optical material stripping agent in an optical polarization material. Background Art

[0002] Liquid crystal display uses the characteristics of liquid crystal materials to achieve the purpose of display. By controlling the electric field of liquid crystal, the light can be changed to a certain degree, so as to achieve the purpose of accurate information display. At present, various types of liquid crystal display devices have been widely developed and produced, and are widely used in various fields; and current mobile phones, computers, televisions and other electronic devices have adopted liquid crystal flat panel displays. In the manufacturing process of flat panel displays, photolithography technology is widely used to etch precise design patterns on substrates. In the manufacturing process of liquid crystal flat panel displays, the photoresists used in photolithography technology are all organic photoresists.

[0003] Photolithography is currently the preferred core technology for fine pattern processing of liquid crystal flat panel display substrates, including coating, photoresist coating, development, etching, photoresist stripping and other processes. Stripping refers to the process step of removing the photoresist layer by stripping technology after selective etching to form a precise pattern. Photoresist removal technology is a core step in the processing of liquid crystal flat panel display substrates. The quality of stripping directly affects the product yield, final manufacturing cost and production efficiency. Photoresist removal technology is divided into wet stripping and dry stripping. Wet stripping uses specific chemicals to dissolve the photoresist, thereby stripping the photoresist on the substrate; dry stripping uses gases such as oxygen in a plasma state, which is called an ashing component, to remove the photoresist remaining on the substrate by ashing. Because wet stripping has a high selectivity, simple process, and little damage to the substrate, it is commonly used in the processing of liquid crystal flat panel displays.

[0004] There are many types of existing photoresist strippers, which use organic solvents as the main component and use the solubility of organic solvents in photoresists to dissolve and remove photoresists. This type of photoresist has a better application effect in the field of chip etching processing. However, the processing process of liquid crystal flat panel displays is very complicated. During the substrate processing process, there will be scenes of low-temperature or high-temperature photoresist stripping. In addition, due to the limitation of the processing line operation rate, there are also high requirements for the stripping speed. Existing photoresist strippers are not stable enough under low and / or high temperature conditions, and the stripping speed is slow, which is difficult to meet the needs of liquid crystal flat panel display processing. Summary of the invention

[0005] In order to solve at least one of the above technical problems, a stripping agent is developed which has good stripping effect on various types of photoresists used in the manufacturing process of liquid crystal display devices, fast stripping speed, and extremely weak corrosion to metals. The present application provides an optical material stripping agent.

[0006] The present application provides an optical material stripping agent, wherein the components and mass percentage ratios of the optical material stripping agent are: 20-25% of an amine compound, 10-15% of a stripping aid, and the balance is an organic solvent; the stripping aid adopts an amide solvent; the organic solvent is selected from two or more of N-methylpyrrolidone, piperidine or diethylene glycol ether compounds.

[0007] By adopting the above technical scheme, the present application adopts a specific organic solvent, combined with an alcoholamine compound, which can have a good dissolving and stripping effect on various organic photoresists used in the existing liquid crystal flat panel display processing. Experiments have shown that it can strip all organic photoresists currently used in the liquid crystal flat panel display processing commonly used on the market; the present application adds an amide solvent as a stripping aid, which can be combined with the alcoholamine compound to effectively improve the dissolution and penetration speed of the photoresist, greatly improve the stripping speed, and can ensure that the stripper has a high stripping speed under both low and high temperature conditions; the present application adopts a specific organic solvent and an alcoholamine compound, and adds an amide solvent, and there is no reaction between the components, the stability at high and low temperatures is good, and the boiling point is also high, which can fully meet the use environment in the processing of liquid crystal flat panel displays.

[0008] Optionally, the alcoholamine compound is selected from one or more of ethanolamine, diethanolamine or triethanolamine.

[0009] By adopting the above technical solution and selecting specific alcohol amine compounds, the dissolution effect on the photoresist can be further improved, and at the same time, the boiling point of the stripper can be effectively increased to ensure the high-temperature stability of the stripper.

[0010] Optionally, the stripping aid is selected from one or two of dimethylacetamide, phthalamide, oleamide, and erucamide.

[0011] By adopting the above technical solution and selecting a specific stripping aid, it is possible to increase the overall boiling point of the stripping agent while ensuring the stripping speed, thereby improving the high-temperature stability of the stripping agent.

[0012] Optionally, the organic solvent includes N-methylpyrrolidone, and the mass percentage content of the N-methylpyrrolidone in the optical material stripping agent is 30-40%.

[0013] Further optionally, the organic solvent includes a diethylene glycol ether compound, and the mass percentage content of the diethylene glycol ether compound in the optical material stripping agent is not less than 25%.

[0014] Further optionally, the diethylene glycol ether compound in the organic solvent is selected from one of diethylene glycol methyl ether and diethylene glycol ethyl ether.

[0015] Further optionally, the organic solvent includes piperidine, and the mass percentage content of the piperidine in the optical material stripping agent is not higher than 10%.

[0016] By adopting the above technical solution, the organic solvent is further accurately selected and the ratio of the organic solvent is optimized, so that the stripping speed can be further effectively improved, and the stripping speed under low temperature or high temperature conditions can be effectively improved.

[0017] Optionally, the components and mass percentage ratios of the optical material stripping agent are: 22-24% diethanolamine, 10-12% stripping aid, and the balance is an organic solvent; the organic solvent includes N-methylpyrrolidone, piperidine and diethylene glycol ethyl ether, and the mass percentage content of the components of the organic solvent in the optical material stripping agent is: 30-32% N-methylpyrrolidone, 30% diethylene glycol ethyl ether, and 4-6% piperidine.

[0018] Further optionally, the stripping aid is phthalamide and oleamide.

[0019] Further optionally, the mass ratio of phthalamide to oleamide is 3:1.

[0020] By adopting the above technical solution and further optimizing the ratio, the best stripping effect can be obtained. The prepared stripping agent has the fastest stripping speed, and the stripping speed at low or high temperature is fast, and the stability at low or high temperature is good.

[0021] In summary, the present invention includes at least one of the following beneficial technical effects:

[0022] 1. This application designs a mixed solvent, which adopts a specific organic solvent and is combined with an amine compound. It can have a good dissolving and stripping effect on various organic photoresists used in the processing of existing liquid crystal flat panel displays. Experiments have shown that it can strip all organic photoresists currently used in the processing of liquid crystal flat panel displays on the market. At the same time, the stripping agent has good low-temperature or high-temperature stability, and can fully meet the use needs of various harsh working conditions in the processing of liquid crystal flat panel displays.

[0023] 2. The present application adds amide solvents as stripping aids, which can be combined with amine compounds to effectively increase the dissolution and penetration speed of the photoresist, greatly increase the stripping speed, and can ensure that the stripping agent has a high stripping speed under both low and high temperature conditions, which can greatly improve the processing efficiency of liquid crystal flat panel displays.

[0024] 3. The optical stripping agent designed in the present application has extremely weak corrosion to metal materials and substrates, can effectively provide protection for the substrate and metal circuits, and effectively avoid unnecessary damage to the substrate during the stripping process.

[0025] 4. The optical stripping agent of the present application is easy to clean. Acetone or ethanol can be used to clean the optical stripping agent of the present application well, which can effectively prevent the stripping agent from remaining on the substrate. DETAILED DESCRIPTION

[0026] The present application is further described in detail below in conjunction with embodiments.

[0027] The optical material stripping agent designed in the present application is specifically a photoresist stripping agent in the processing of liquid crystal flat panel display substrates. The components and mass percentage ratios of the optical material stripping agent are: 20-25% of alcohol amine compounds, 10-15% of stripping aids, and the balance is organic solvents; the stripping aids are amide solvents; the organic solvents are selected from two or more of N-methylpyrrolidone, piperidine or diethylene glycol ether compounds.

[0028] The stripping agent of the present application is very simple to prepare, and each component is evenly mixed to form a mixed liquid.

[0029] Prior to this application, existing photoresist strippers were usually used in the field of microelectronic component processing. For example, chip processing, circuit board manufacturing, etc. The processing of such electronic components currently generally adopts photolithography technology to etch out complex circuits. In such processing, the stripping of photoresist does not have too high requirements on speed, but has higher requirements on stripping effect. Moreover, in such processing, the working environment is relatively high-quality, and the stripping operation is generally carried out at room temperature, and there is no working environment for low-temperature or high-temperature processing. Therefore, there is no excessively high requirement for the stability and performance of the low-temperature or high-temperature of the photoresist stripper. At the same time, since it is the processing of electronic components, metal protective agents and other protective agents are usually added to such strippers to ensure that the strippers will not cause corrosion damage to the substrate and the metal wires during stripping.

[0030] However, the processing of liquid crystal flat panel displays has completely different working conditions and environments, and the photoresists used are also slightly different. In addition, based on the requirements of production capacity and cost, extremely high requirements are placed on the stripping speed of the stripping process. Therefore, when the photoresist stripper used in the processing of existing electronic components is applied to the processing of liquid crystal flat panel displays, the use effect is extremely unsatisfactory, and the stripping speed and stability are difficult to meet the needs. Although there are photoresist strippers dedicated to the processing of liquid crystal flat panel displays, their design is still based on the photoresist strippers used in the processing of electronic components. Although the stripping speed and high temperature stability are improved, the stripping speed under low temperature conditions is unsatisfactory, and the stripping speed is still low, and many additives are added, which not only makes the ratio complicated, but also makes the preparation cost high.

[0031] The inventors of the present application have found in experiments that after selecting a specific organic solvent, adding an alcohol amine compound, and adding an amide solvent, the prepared stripper can quickly penetrate the photoresist layer, not only with a fast sol speed, but also quickly dissolve the bonding surface between the photoresist and the substrate by penetration, thereby greatly improving the stripping speed. At the same time, through experiments, the inventors have also found that the above-mentioned stripper has good stability at low or high temperatures and also has a fast stripping speed.

[0032] Based on the above findings, the inventors designed the optical material stripping agent of the present application, which is prepared from an alcohol amine compound, an organic solvent and an amide solvent.

[0033] The inventors also found in experiments that the selection and ratio of each component have a great influence on the performance of the stripping agent. Based on experimental research, the present application adopts a suitable ratio of mixing.

[0034] Optionally, the alcoholamine compound of the present application is preferably selected from one or more of ethanolamine, diethanolamine or triethanolamine.

[0035] Optionally, the stripping aid of the present application is preferably one or two selected from dimethylacetamide, phthalamide, oleamide, and erucamide.

[0036] The following are the examples and experimental test parts of this application, and the raw materials of each component and the photoresist used for detection are all purchased from the market.

[0037] For embodiments 1 to 5, the specific ratio parameters are shown in Table 1 below.

[0038] Table 1 Proportion table of Examples 1 to 5

[0039]

[0040]

[0041] This application uses the best embodiments in the patents with publication numbers CN111448520A, CN107924144A and CN110597024A as Comparative Examples 1, 2 and 3.

[0042] Performance Test:

[0043] The stripping agents of Examples 1 to 5 and Comparative Examples 1 to 3 were used to wet-strip 5 mm thick GA-XL1200 photoresist completely coated on the surface of a 5x5 cm glass plate at -5°C, 25°C and 85°C, respectively, and the stripping time and stripping effect were tested respectively; at the same time, the stability of the stripping agent within 72 hours at the above temperature was tested. The specific results are shown in Table 2. Stripping effect The surface of the glass plate was observed with a 75x magnifying glass to observe whether there was any photoresist residue.

[0044] Table 2 Test results of Examples 1 to 5 and Comparative Examples

[0045]

[0046] It can be seen from the data in Table 2 that the stripping agent of the present application has a significantly faster stripping speed than the existing stripping agent, and has a better stripping effect, and no photoresist remains after stripping. At the same time, the stripping agent of the present application is still very stable at -5°C, and still has a high stripping speed and a better stripping effect.

[0047] It can also be seen from the data in Table 2 that when N-methylpyrrolidone is used as an organic solvent in the present application, the stripping speed is significantly improved, and when N-methylpyrrolidone is mixed with other organic solvents, the stripping speed is further improved. Secondly, when phthalamide and oleamide are selected as the auxiliary agents in the present application, the stripping speed is improved compared with other amide auxiliary agents.

[0048] The inventors carefully screened the organic solvent and the stripping agent to obtain a better stripping agent. The following are Examples 6 to 10 of the present application, which use the same ratio as Example 3, except that the selection of the organic solvent and the stripping agent are optimized, as shown in Table 3.

[0049] Table 3 Proportion table of Examples 6 to 10

[0050]

[0051] Based on Example 8, propylene glycol was used as a replacement auxiliary agent as Comparative Example 4; based on Example 8, dimethyl sulfoxide was used to replace N-methylpyrrolidone as Comparative Example 5; based on Example 8, tricholine was used as an alkaline substance to replace triethanolamine as Comparative Example 6.

[0052] Performance Test:

[0053] The stripping agents of Examples 6 to 10 and Comparative Examples 4 to 6 were used to wet-strip 5 mm thick GA-XL1200 photoresist completely coated on the surface of a 5x5 cm glass plate at -5°C, 25°C and 85°C, respectively, and the stripping time and stripping effect were tested respectively; at the same time, the stability of the stripping agent within 72 hours at the above temperature was tested. The specific results are shown in Table 4. Stripping effect The surface of the glass plate was observed with a 75x magnifying glass to observe whether there was any photoresist residue.

[0054] Table 4 Test results of Examples 6 to 10

[0055]

[0056] It can be seen from the data in Table 4 that after the present application adopts N-methylpyrrolidone as the main organic solvent, the stripping speed can be further improved. After N-methylpyrrolidone and other organic solvents are compounded, the stripping speed is faster. At the same time, the stripping speed after the present application adopts phthalamide and oleamide compounding is obviously faster than the stripping speed of phthalamide or oleamide alone, and the control of the compounding ratio of the two has a greater impact on the stripping speed. It can be seen from the data of comparative examples 6 to 10 and comparative examples 4 to 6 that the improvement of the stripping speed of the present application is based on the effect of the synergistic coordination of alcoholamine compounds and amide solvents. After the two are compounded, the stripping speed is significantly improved, and the low-temperature stripping effect is also significantly improved.

[0057] The following are Examples 11 to 16 of the present application, which further optimize the ratio and selection of the organic solvent, the ratio and selection of the stripping aid, and optimize the selection of the amine compound, as shown in Table 5 for details.

[0058] Table 5 Proportions of Examples 11 to 16

[0059]

[0060]

[0061] Performance Test:

[0062] Taking the stripping agent of Example 10 as Comparative Example 7, the stripping agents of Examples 11 to 16 and the stripping agent of Comparative Example 7 were used to perform wet stripping on 5 mm thick HSQ Fox-15 and domestic KMP D3200 photoresists completely coated on the upper surface of a 5x5 cm glass plate at -5°C and 25°C, and the stripping speed and stripping effect were tested. The specific results are shown in Table 6.

[0063] Table 6 Test results of Examples 11 to 16

[0064]

[0065]

[0066] It can be seen from the data in Table 6 that when diethanolamine is selected, and N-methylpyrrolidone, diethylene glycol ethyl ether and piperidine are selected to be compounded into an organic solvent in a specific ratio, and phthalamide and oleic acid amide are selected to be compounded into a stripping aid in a ratio of 3:1, the stripping speed and stripping effect of the present application are the best, which are significantly improved compared with Comparative Example 7. Moreover, the stripping agent of the present application has a good stripping effect on photoresists for processing liquid crystal displays of different models.

[0067] The above are all preferred embodiments of the present application, and the protection scope of the present application is not limited thereto. Therefore, any equivalent changes made according to the structure, shape, and principle of the present application should be included in the protection scope of the present application.

Claims

1. An optical material stripping agent, characterized in that: The components and mass percentage ratios of the optical material stripping agent are: 22-24% diethanolamine, 10-12% stripping aid, and the balance is an organic solvent; the organic solvent includes N-methyl pyrrolidone, piperidine and diethylene glycol ethyl ether, and the mass percentage content of the components of the organic solvent in the optical material stripping agent is: 30-32% N-methyl pyrrolidone, 30% diethylene glycol ethyl ether, and 4-6% piperidine; The stripping aid is phthalamide and oleamide, and the mass ratio of phthalamide to oleamide is 3:1.

Citation Information

Patent Citations

  • Photoresist stripping solution composition for LCD manufacturing

    CN107924144A

  • Photoresist stripper composition for preventing stain and preparing method of flat plate panel substrate

    CN110597024A

  • Photoresist stripper compostion

    CN111448520A

  • Negative photoresist stripping fluid and preparation method and application thereof

    CN110262199A

  • Resist stripping solution

    CN113614647A