A method for simulating infrared radiation of far-field targets

Abstract

The present invention discloses a method for simulating infrared radiation of a far-field target, and the simulation method comprises the following steps: S1, determining the target to be simulated; S2, calculating the emission power of an infrared laser according to the infrared radiation characteristics of the target to be simulated; S3, aiming the infrared laser at the device to be tested, and controlling the infrared laser to emit an infrared laser for simulating the radiation of the target. The present invention simulates the infrared radiation of a far-field target by emitting an infrared laser, and stimulates various infrared detection devices including infrared alarms and infrared thermal imagers, so as to provide an infrared signal source for testing the equipment. The infrared radiation of different far-field targets can be simulated by adjusting the emission power of the infrared laser, and the passing or approaching process of the target can also be simulated by controlling the change of the emission power of the infrared laser. The present method has high radiation efficiency and good adjustability, and is suitable for simulating infrared targets under far-field conditions.

Description

Technical Field

[0001] The invention relates to the technical field of target simulation, in particular to a far-field target infrared radiation simulation method. Background Art

[0002] Various infrared devices that use the infrared characteristics of objects for detection, warning, and guidance have been widely used in civilian and military fields. To provide a target for the performance test of infrared equipment, it is usually necessary to design a radiation source with corresponding infrared performance.

[0003] At present, the principle of blackbody radiation is often used for simulation, that is, heating a specific material to emit infrared radiation, and simulating the radiation characteristics of the infrared target by adjusting the temperature of the material. Blackbody radiation is spontaneous and wide-spectrum radiation. When simulating infrared targets, the blackbody needs to be heated to a higher temperature, and the directionality is poor during propagation, so the radiation efficiency is not high, and the required heating power is generally large. Therefore, the simulation device is generally large in size and heavy in weight. These characteristics are particularly inconvenient during field mobile operations. In addition, if you need to change the radiation characteristics of the infrared target and simulate the rapid movement of the infrared target, you need to adjust the temperature of the material, but due to thermal inertia, it is difficult to achieve the requirement of rapid temperature adjustment.

[0004] In the testing of some infrared equipment, especially infrared warning equipment, on the one hand, the distance between the test equipment and the infrared target is relatively far, and the required infrared target is a point source target, not a surface target; on the other hand, the detection and warning of the infrared equipment are only related to the integrated radiation power received within its working band, and it is actually indistinguishable from the infrared radiation wavelength. Therefore, it is feasible to use a point wavelength infrared laser within the working band instead of a wide-spectrum radiation-excited infrared warning system. Summary of the invention

[0005] The object of the present invention is to provide a far-field target infrared radiation simulation method to solve the problems raised in the above background technology.

[0006] To achieve the above object, the present invention provides the following technical solutions:

[0007] A method for simulating infrared radiation of a far-field target includes at least one infrared laser and a controller for controlling the emission power of the infrared laser, and a beam adjustment system for adjusting the divergence angle of the laser emitted by the infrared laser. The simulation method includes the following steps:

[0008] S1. Determine the target to be simulated;

[0009] S2. Calculate the emission power of the infrared laser according to the radiation characteristics of the target to be simulated;

[0010] S3. Aim the infrared laser at the device to be tested, and control the infrared laser to emit infrared laser for simulating target radiation.

[0011] As a further solution of the present invention: the wavelength of the infrared laser is within the receiving wavelength range of the device to be tested.

[0012] As a further solution of the present invention: the infrared laser includes a medium-wave infrared laser and / or a long-wave infrared laser, the emission wavelength of the medium-wave infrared laser is within the 3-5 μm band, and the emission wavelength of the long-wave infrared generator is within the 7-14 μm band.

[0013] As a further solution of the present invention: the infrared laser includes a medium-wave infrared laser and a long-wave infrared laser, and the medium-wave infrared laser and the long-wave infrared laser either emit laser or emit laser simultaneously.

[0014] As a further solution of the present invention: the infrared laser emitted by the infrared laser is a continuous wave laser.

[0015] As a further solution of the present invention:

[0016] Transmitting power of infrared laser

[0017] in:

[0018] P λ is the integrated infrared radiation equivalent power density of the target to be simulated at the device under test,

[0019] L—laser atmospheric transmission distance;

[0020] ρ—transmittance of laser after atmospheric transmission L;

[0021] θ—Laser divergence angle, laser generation is half angle;

[0022] η—The responsivity of the device under test at the medium-wave or long-wave laser wavelength.

[0023] As a further solution of the present invention:

[0024] The integrated infrared radiation equivalent power density of the target to be simulated at the device under test

[0025] in:

[0026] M λ is the monochromatic radiation power density of the simulated infrared target at the device under test;

[0027] η(λ) is the wavelength responsivity function of the device under test;

[0028] λ 1 —λ 2 Indicates the operating band range of the device under test.

[0029] As a further solution of the present invention: the simulation of target infrared radiation in S3 also includes dynamic simulation. During the dynamic simulation, the infrared radiation of the entire process of passing through or approaching the target to be measured is input, and the target's passing through or approaching process is simulated by controlling the emission power of the infrared laser.

[0030] Compared with the prior art, the beneficial effects of the present invention are as follows: the present invention uses an infrared laser to emit infrared laser, thereby simulating the infrared radiation of a far-field target, and the laser can simulate the infrared characteristics of different targets to be measured by adjusting the power. The infrared generator is small in size and light in weight, and has a high required radiation efficiency, so it is easy to move, and has better adjustability and is quick and convenient to adjust. In addition, the laser radiation has the advantages of good directionality, high electro-optical efficiency, quick and convenient power adjustment, etc., and has high practical value in the test and experiment of infrared equipment. DETAILED DESCRIPTION

[0031] The technical solutions in the embodiments of the present invention are described clearly and completely below. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of them. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0032] In an embodiment of the present invention, a far-field infrared radiation simulation method includes at least one infrared laser and a controller for controlling the emission power of the infrared laser, and a beam adjustment system for adjusting the divergence angle of the laser emitted by the infrared laser. The wavelength of the infrared laser is within the receiving wavelength range of the device to be tested. The infrared laser includes a medium-wave infrared laser and / or a long-wave infrared laser. The emission wavelength of the medium-wave infrared laser is within the 3-5 μm band. The emission wavelength of the long-wave infrared generator is within the 7-14 μm band. The infrared laser includes a medium-wave infrared laser and a long-wave infrared laser. Either the medium-wave infrared laser and the long-wave infrared laser emit laser light or emit laser light simultaneously. The infrared laser emitted by the infrared laser is a continuous wave laser.

[0033] The simulation method includes the following steps:

[0034] S1. Determine the target to be simulated, such as an airplane, a missile, a bomb, etc., and input the radiation characteristic parameters of the target to be simulated;

[0035] S2. Calculate the emission power of the infrared laser according to the radiation characteristics of the target to be simulated, calculate the integrated infrared radiation equivalent power density in the medium wave or long wave band where the target to be simulated reaches the test equipment, and then calculate the laser emission power of the infrared laser according to the transmission distance of the laser (the distance between the laser and the test equipment) and the laser divergence angle;

[0036] Laser emission power

[0037] in:

[0038] P λ is the integrated infrared radiation equivalent power density of the target to be simulated at the device under test, and

[0039] L—laser atmospheric transmission distance;

[0040] ρ—transmittance of laser after atmospheric transmission L;

[0041] θ—laser divergence angle (half angle);

[0042] η—responsivity of the test equipment at medium-wave or long-wave laser wavelength;

[0043] M λ is the monochromatic radiation power density of the simulated infrared target at the device under test;

[0044] η(λ) is the wavelength responsivity function of the device under test;

[0045] λ 1 —λ 2 Indicates the operating band range of the device under test.

[0046] S3. Aim the infrared laser at the device to be tested, and control the infrared laser to emit infrared laser for simulating target radiation to stimulate infrared tracking and aiming equipment; emit long-wave infrared laser to simulate target infrared radiation to stimulate infrared warning equipment; or emit medium-wave and long-wave infrared lasers at the same time to stimulate the above infrared warning system.

[0047] In addition, simulating the target infrared radiation also includes dynamic simulation. During the dynamic simulation, the infrared radiation of the entire process of passing through or approaching the target to be measured is input, and the target's passing through or approaching process is simulated by controlling the emission power of the infrared laser.

[0048] It will be apparent to those skilled in the art that the present invention is not limited to the details of the exemplary embodiments described above and that the present invention can be implemented in other specific forms without departing from the spirit or essential features of the present invention. Therefore, the embodiments should be considered exemplary and non-restrictive in all respects, and the scope of the present invention is defined by the appended claims rather than the above description, and it is intended that all changes falling within the meaning and scope of the equivalent elements of the claims be included in the present invention.

[0049] In addition, it should be understood that although the present specification is described according to implementation modes, not every implementation mode contains only one independent technical solution. This description of the specification is only for the sake of clarity. Those skilled in the art should regard the specification as a whole. The technical solutions in each embodiment may also be appropriately combined to form other implementation modes that can be understood by those skilled in the art.

Claims

1. A far-field target infrared radiation simulation method, characterized in that: The system comprises at least one infrared laser and a controller for controlling the emission power of the infrared laser, and a beam adjustment system for adjusting the divergence angle of the laser emitted by the infrared laser. The simulation method comprises the following steps: S1. Determine the target to be simulated; S2. Calculate the emission power of the infrared laser according to the radiation characteristics of the target to be simulated; The emission power of the infrared laser in: P λ is the integrated infrared radiation equivalent power density of the target to be simulated at the device under test, L—laser atmospheric transmission distance; ρ—transmittance of laser after atmospheric transmission L; θ—laser divergence angle, laser divergence angle is half angle; η—responsivity of the device under test at medium-wave or long-wave laser wavelength S3. Aim the infrared laser at the device to be tested, and control the infrared laser to emit infrared laser for simulating target radiation.

2. A far-field target infrared radiation simulation method according to claim 1, characterized in that: The wavelength of the infrared laser is within the working wavelength range of the device under test.

3. A far-field target infrared radiation simulation method according to claim 1, characterized in that: The infrared laser includes a medium-wave infrared laser and / or a long-wave infrared laser. The emission wavelength of the medium-wave infrared laser is within the 3-5 μm band, and the emission wavelength of the long-wave infrared laser is within the 7-14 μm band.

4. A far-field target infrared radiation simulation method according to claim 1, characterized in that: The infrared laser includes a medium-wave infrared laser and a long-wave infrared laser, and either or both of the medium-wave infrared laser and the long-wave infrared laser emit laser light.

5. A far-field target infrared radiation simulation method according to claim 1, characterized in that: The infrared laser emitted by the infrared laser is a continuous wave laser.

6. A far-field target infrared radiation simulation method according to claim 1, characterized in that: The integrated infrared radiation equivalent power density of the target to be simulated at the device to be tested in: M λ is the monochromatic radiation power density of the simulated infrared target at the device under test; η(λ) is the wavelength responsivity function of the device under test; λ1—λ2 represents the operating band range of the device under test.

7. A far-field target infrared radiation simulation method according to claim 1, characterized in that: The simulation of target infrared radiation in S3 also includes dynamic simulation. During the dynamic simulation, the target's passing through or approaching process is simulated by controlling the change of the infrared laser emission power.

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