A high-precision temperature sensor chip automatic testing system and method

Abstract

The present invention relates to the field of sensor technology, and specifically discloses a high-precision temperature sensor chip automatic testing system and method, the method comprising S1, measuring the resistance values of a chip under test and a standard chip at room temperature, and calculating the corresponding resistance difference at room temperature; S2, placing the corresponding chip under test and the standard chip in the temperature field for heating to achieve short-term thermal equilibrium; the temperature of the temperature field is a dynamically changing temperature curve; S3, measuring and calculating the resistance difference between the chip under test and the standard chip at high temperature; S4, calibrating the chip under test based on the corresponding high-temperature resistance difference and room-temperature resistance difference. This solution can reduce the requirements for the uniformity and stability of the temperature field during the test process, achieve rapid measurement of the chip, and thus improve the efficiency of temperature sensor chip detection.

Description

Technical Field

[0001] The present invention relates to the field of sensor technology, and in particular to a high-precision temperature sensor chip automatic testing system and method. Background Art

[0002] Temperature, as a fundamental physical quantity, needs to be collected in industrial, agricultural, and medical production activities, as well as in people's daily lives. Temperature sensor chips, as a key means of temperature acquisition, are widely used in fields including personal computers, communications, and healthcare. Before leaving the factory, temperature sensors generally undergo performance testing to ensure the chip's measurement accuracy. The two most important specifications of Pt series temperature chips (resistance at zero degrees and α value) determine the chip's measurement accuracy.

[0003] Existing Pt series temperature sensor detection devices mostly use a fixed temperature field (zero-degree temperature field, 100-degree temperature field, and other constant temperature fields) when testing temperature sensors. However, this fixed temperature field takes a long time to stabilize. Usually, the chip to be tested needs to be placed in the fixed temperature field for more than 30 minutes to ensure that the temperature of the chip to be tested is consistent with that of the temperature field. The uniformity and stability of the temperature field are very high, and it is easy to cause errors in the test value due to the fluctuation of the temperature field. The test efficiency is low and it is not suitable for batch automated testing.

[0004] Based on this, there is an urgent need for a high-precision temperature sensor chip automatic testing system and method that can reduce the requirements for uniformity and stability of the temperature field during the test process, achieve rapid measurement of the chip, and thus improve the efficiency of temperature sensor detection. Summary of the Invention

[0005] The present invention aims to provide a high-precision temperature sensor chip automatic testing system and method, which can reduce the requirements for the uniformity and stability of the temperature field during the test process, realize rapid measurement of the chip, and thus improve the efficiency of temperature sensor detection.

[0006] To achieve the above object, the present invention adopts the following technical solution: a high-precision temperature sensor chip automatic testing method, comprising the following steps:

[0007] S1. Before placing the chip under test and the standard chip in the temperature field, measure the resistance values of the chip under test and the standard chip at room temperature, and calculate the corresponding room temperature resistance difference at room temperature;

[0008] S2. Place the corresponding chip under test and the standard chip in a temperature field and heat them to achieve short-term thermal equilibrium; the temperature of the temperature field is a dynamically changing temperature curve;

[0009] S3, measuring and calculating the resistance difference between the chip under test and the standard chip at high temperature;

[0010] S4. Calibrate the chip under test according to the corresponding high-temperature resistance difference and room-temperature resistance difference.

[0011] The principle and advantages of this scheme are: in this scheme, before entering the temperature field for heating treatment, the resistance values of the chip under test and the standard chip at room temperature will be measured and the room temperature resistance difference between the two will be calculated. Then, after the two chips reach short-term thermal equilibrium after entering the temperature field, the high-temperature resistance difference between the chip under test and the standard chip will be measured and calculated. Finally, the chip under test will be calibrated by the high-temperature resistance difference and the room-temperature resistance difference.

[0012] In this solution, when the chip under test and the standard chip are heated, the temperature in the place corresponding to the heating, that is, the temperature field, changes dynamically and does not need to be constant at a certain temperature point. Compared with the existing test using a fixed temperature field, the present application shortens the corresponding temperature stabilization time by dynamically changing the temperature, and can achieve short-term thermal equilibrium within a shorter time interval, greatly improving the efficiency of the test of the chip under test; at the same time, the present application does not require the uniformity and stability of the temperature field as high as that of the fixed temperature field, that is, it reduces the requirements for the uniformity and stability of the temperature field, realizes rapid measurement of the chip, and greatly improves the efficiency of the test.

[0013] Moreover, in this solution, since the temperature in the temperature field used is a dynamically changing temperature curve, and the chip under test and the standard chip are heated synchronously, the environment in which the chip under test and the standard chip are located at the same time and the same place is consistent. When determining the level of the chip under test, it is only necessary to detect the resistance difference between the chip under test and the standard chip at room temperature and at high temperature, and the resistance difference at the two temperatures is extremely easy to determine. Compared with the prior art that heats the chip through a temperature field with a fixed temperature curve, the prior art needs to ensure that the resistance of each chip is measured at the same temperature before the chip detection is completed. This makes the prior art have higher and more corresponding requirements when performing measurements. For example, if the temperature is 100 degrees, then during detection, it is necessary for the temperature of both chips to be 100 degrees at the same time, which greatly increases the difficulty of detection. However, this does not require this. It only requires that the corresponding temperatures are close to the corresponding temperatures to measure the two chips. The corresponding detection difficulty is greatly reduced, so the overall detection efficiency will be greatly improved, which is more conducive to automation.

[0014] Preferably, as an improvement, a new type of heat transfer material is used for heat transfer in the medium temperature field S2.

[0015] Beneficial effect: Using new heat transfer materials to transfer heat can enable the chip under test and the standard chip to achieve short-term thermal equilibrium within a shorter time interval, greatly shortening the heating time of the temperature field on the chip and improving the corresponding detection efficiency, thereby realizing large-scale chip detection.

[0016] Preferably, as an improvement, said S2 includes:

[0017] S20, placing the corresponding chip under test and the standard chip in a temperature field for heating, wherein the temperature field is a dynamically changing temperature curve;

[0018] S21, performing real-time detection on the temperature of the temperature field where the chip under test and the standard chip are located, and calculating the real-time temperature difference between the chip under test and the standard chip;

[0019] S22. According to the corresponding real-time temperature difference, determine whether the corresponding real-time temperature difference is within the preset temperature measurement accuracy. If so, execute S3; if not, execute S21.

[0020] Beneficial Effects: This solution first processes the chip under test and the standard chip in the corresponding temperature field. The real-time measured temperatures of the two are then detected in real time, and the corresponding real-time temperature difference is calculated. Subsequently, the temperature measurement accuracy is used to determine whether the real-time temperature difference between the chip under test and the standard chip at high temperatures meets the corresponding requirements. If it does, it can be determined that the two chips have reached short-term thermal equilibrium. The time to measure the resistance value of the chip under test is determined by the corresponding level of temperature measurement accuracy, which greatly improves the accuracy and authenticity of the corresponding resistance value measurement.

[0021] Preferably, as an improvement, the S4 includes:

[0022] S40, calculating the resistance range of each level of the chip under test at high temperature based on the room temperature resistance difference and the resistance value of the standard chip at high temperature, and determining the level corresponding to the chip under test at high temperature based on the high temperature resistance difference;

[0023] S41 is used to determine the final grade of the chip under test according to the grade corresponding to the chip under test at room temperature and the grade corresponding to the chip under test at high temperature using the final grade evaluation standard.

[0024] Beneficial effect: By judging the grade at room temperature and the grade at high temperature, the grade of the tested chip can be accurately judged, which greatly improves the accuracy of sorting the tested chips and enables the corresponding tested chips to be well sorted.

[0025] In order to achieve the above objectives, the present application also provides a high-precision temperature sensor chip automatic testing system, comprising:

[0026] The room temperature measurement module is used to measure the resistance values of the chip under test and the standard chip at room temperature before placing them in the temperature field, and calculate the corresponding room temperature resistance difference at room temperature;

[0027] The temperature field heating module is used to place the corresponding tested chip and the standard chip in the temperature field for heating so that they reach short-term thermal equilibrium; the temperature of the temperature field is a dynamically changing temperature curve;

[0028] High temperature measurement module, used to measure and calculate the high temperature resistance difference between the chip under test and the standard chip;

[0029] The calibration module is used to calibrate the chip under test according to the corresponding high-temperature resistance difference and room-temperature resistance difference.

[0030] Technical principles and effects of this solution: In this solution, the room temperature measurement module is used to calculate the resistance difference between the chip under test and the standard chip at room temperature before they enter the temperature field. Then, the temperature field heating module is used to heat the chip under test and the standard chip so that the two chips can quickly reach short-term thermal equilibrium. At this time, the resistance values of the chip under test and the standard chip can be measured, and the corresponding high-temperature resistance difference can be measured. After that, the chip under test can be calibrated according to the high-temperature resistance difference and the room-temperature resistance difference, so that the chip under test can be tested.

[0031] The use of a dynamically changing temperature curve greatly reduces the requirements for the temperature field when heating the chip under test and the standard chip. It is not necessary to make the ambient temperature of the chip under test and the standard chip consistent, but it is sufficient for them to reach a short-term thermal equilibrium, that is, they can be relatively close. For example, to measure the resistance value of the chip under test and the standard chip at a high temperature t, then in this dynamically changing temperature field, it is only necessary that the corresponding temperatures of the chip under test and the standard chip at the same time can be close to the high temperature t to measure the resistance of the chip under test and the standard chip. Compared with the prior art of heating through a fixed temperature field, the present application greatly reduces the time it takes for the temperature field to heat the chip under test and the standard chip, making the entire testing process faster, which is conducive to the large-scale testing of the chips under test, and at the same time, the requirements for the stability and uniformity of the corresponding temperature field are not very high.

[0032] Moreover, since the temperature in the temperature field used is a dynamically changing temperature curve, and the chip under test and the standard chip are heated synchronously, the environment in which the chip under test and the standard chip are located at the same time and place is consistent. When determining the level of the chip under test, it is only necessary to detect the resistance difference between the chip under test and the standard chip at room temperature and at high temperature. Compared with the prior art of heating through a temperature field with a fixed temperature curve, this solution only needs to be close to the corresponding temperature to measure both chips, and the corresponding detection difficulty is greatly reduced. In this way, the overall detection efficiency will be greatly improved, which is more conducive to automation.

[0033] Preferably, as an improvement, the temperature field heating module includes:

[0034] The heating module is used to place the corresponding tested chip and the standard chip in a temperature field for heating after the room temperature measurement is completed, where the temperature field is a dynamically changing temperature curve;

[0035] The third measurement module is used to detect the temperature of the temperature field where the chip under test and the standard chip are located in real time, and calculate the real-time temperature difference between the chip under test and the standard chip;

[0036] The judgment module is used to judge whether the corresponding real-time temperature difference is within a preset temperature measurement accuracy based on the corresponding real-time temperature difference. If so, it is judged that short-term thermal equilibrium is achieved; otherwise, it is judged that short-term thermal equilibrium is not achieved.

[0037] Beneficial effect: In this scheme, the chip under test and the standard chip are first heated in the corresponding temperature field, and the temperatures of the chip under test and the standard chip in the temperature field are detected in real time to form a corresponding real-time temperature difference. Since a temperature is set in advance when the chip is heated, the high-temperature resistance difference at this temperature needs to be measured. In this way, the real-time temperature difference of the two chips needs to be calculated, and it is judged whether the real-time temperature difference of the two chips is within the corresponding temperature measurement accuracy. If so, it is judged that short-term thermal equilibrium is achieved, and the temperature measurement accuracy at high temperature is determined by judging the level at room temperature. This provides a basis for judging short-term thermal equilibrium at high temperature, so that the short-term thermal equilibrium point can be judged faster and more conveniently, which makes the entire chip test more accurate and faster, and is more conducive to large-scale quantification of chip testing.

[0038] Preferably, as an improvement, the calibration module includes:

[0039] The first judgment module is used to calculate the resistance range of each level of the chip under test at high temperature based on the room temperature resistance difference and the resistance value of the standard chip at high temperature, and to determine the level corresponding to the chip under test at high temperature based on the high temperature resistance difference;

[0040] The second judgment module is used to judge the final grade of the chip under test according to the grade corresponding to the chip under test at room temperature and the grade corresponding to the chip under test at high temperature and using the final grade judgment standard.

[0041] Beneficial effect: In this solution, when judging the final grade of the chip under test, not only the grade at high temperature is judged, but also the grade at room temperature is combined. The accuracy and reliability of the grade judgment of the chip under test are greatly improved by judging the grades at two temperatures. BRIEF DESCRIPTION OF THE DRAWINGS

[0042] Figure 1 This is a flow chart of a method for automatically testing a high-precision temperature sensor chip in Embodiment 1 of the present invention.

[0043] Figure 2 This is a specific flow chart of S1 in the first embodiment of the present invention.

[0044] Figure 3 This is a logic block diagram of the automatic testing system for high-precision temperature sensor chips in Example 1 of the present invention. DETAILED DESCRIPTION

[0045] The following is further described in detail through specific implementation methods:

[0046] The embodiment is basically as shown in the attached Figure 1 and Figure 2 A method for automatically testing a high-precision temperature sensor chip is shown, comprising the following steps:

[0047] S1. Before placing the chip under test and the standard chip in the temperature field, measure the resistance values of the chip under test and the standard chip at room temperature, and calculate the corresponding room temperature resistance difference at room temperature;

[0048] In this embodiment, the criteria for judging each level of the Pt100 chip at room temperature are:

[0049] Grade A, -0.05Ω≤△R 室温 ≤0.05Ω;

[0050] Grade B, -0.11Ω≤△R 室温 ≤0.11Ω;

[0051] Grade C, -0.5Ω≤△R 室温 ≤0.5Ω;

[0052] Note: For Pt1000 chip, the 100 in the above formula is changed to 1000, and for Pt500, the 100 in the above formula is changed to 500;

[0053] Among them, R室温 Refers to the test value of the chip under test at room temperature, R 常标 Refers to the test value of the standard chip at room temperature, △R 室温 Refers to the difference between the test value of the chip under test and the standard chip at room temperature, namely △R 室温 =R 室温 -R 常标 ;

[0054] S2. Place the corresponding chip under test and the standard chip in a temperature field and heat them to achieve short-term thermal equilibrium; the temperature of the temperature field is a dynamically changing temperature curve;

[0055] The S2 includes:

[0056] S20, placing the corresponding chip under test and the standard chip in a temperature field for heating, wherein the temperature field is a dynamically changing temperature curve;

[0057] S21, performing real-time detection on the temperature of the temperature field where the chip under test and the standard chip are located, and calculating the real-time temperature difference between the chip under test and the standard chip;

[0058] S22. According to the corresponding real-time temperature difference, determine whether the corresponding real-time temperature difference is within the preset temperature measurement accuracy. If so, execute S3; if not, execute S21.

[0059] S3, measuring and calculating the high temperature resistance difference between the chip under test and the standard chip;

[0060] S4. Calibrate the chip under test according to the corresponding high-temperature resistance difference and room-temperature resistance difference.

[0061] The S4 includes:

[0062] S40, calculating the resistance range of each level of the chip under test at high temperature based on the room temperature resistance difference and the resistance difference of the standard chip at high temperature, and determining the level corresponding to the chip under test at high temperature based on the high temperature resistance difference;

[0063] S41 is used to determine the final grade of the chip under test according to the grade corresponding to the chip under test at room temperature and the grade corresponding to the chip under test at high temperature using the final grade evaluation standard.

[0064] In this embodiment, the criteria for determining the various levels of the Pt100 chip at high temperatures are:

[0065] Grade A, (100+△R 室温 )×(0.003845×t+1)-R t标 ≤△R t ≤(100+△R 室温)×(0.003856×t+1)-R t标 ,,t=(R t标 -100) / 0.3851;

[0066] Grade B, (100+△R 室温 )×(0.003840×t+1)-R t标 ≤△R t ≤(100+△R 室温 )×(0.003862×t+1)-R t标 ,t=(R t标 -100) / 0.3851;

[0067] Grade C, (100+△R 室温 )×(0.003826×t+1)-R t标 ≤△R t ≤(100+△R 室温 )×(0.003876×t+1)-R t标 , t=(R t标 -100) / 0.3851;

[0068] Note: For Pt1000 chip, the 100 in the above formula is changed to 1000, and for Pt500, the 100 in the above formula is changed to 500;

[0069] Among them, R t Refers to the test value of the chip under test at high temperature t, R t标 Refers to the test value of the standard chip at high temperature t, △R t It refers to the difference between the test value of the chip under test and the standard chip at high temperature t, that is, △R t =R t -R t标 ;

[0070] In this embodiment, the final grade judgment standard is: △R 室温 , △R t Must meet the requirements of Grade A at the same time to be sorted to Grade A, △R 室温 , △R t Must meet the requirements of grade B at the same time or one of them must be A and the other B, sorted to grade B, △R 室温 , △R tIf both chips meet the requirements of Level C, or one chip is A and the other is C, or one chip is B and the other is C, they will be sorted into Level C. By combining the room temperature resistance difference and the high temperature resistance difference, the final level of the chip under test is determined. This greatly improves the accuracy of the judgment of the chip under test. The entire process is relatively simple, and when processing large quantities, the overall time consumed is not very long, which greatly improves the efficiency of the entire chip under test test work. In this embodiment, the chips under test of different levels are sorted to achieve separation of the chips under test of different levels, which is conducive to unified processing of the chips under test of different levels in the later stage, further improving the efficiency and effectiveness of the chip under test processing.

[0071] like Figure 3 As shown, this embodiment also provides a high-precision temperature sensor chip automatic testing system, including:

[0072] The room temperature measurement module is used to measure the resistance values of the chip under test and the standard chip at room temperature before placing them in the temperature field, and calculate the corresponding room temperature resistance difference at room temperature;

[0073] The temperature field heating module is used to place the corresponding tested chip and the standard chip in the temperature field for heating so that they reach short-term thermal equilibrium; the temperature of the temperature field is a dynamically changing temperature curve;

[0074] The temperature field heating module includes:

[0075] The heating module is used to place the corresponding tested chip and the standard chip in a temperature field for heating after the room temperature measurement is completed, where the temperature field is a dynamically changing temperature curve;

[0076] The third measurement module is used to detect the temperature of the temperature field where the chip under test and the standard chip are located in real time, and calculate the real-time temperature difference between the chip under test and the standard chip;

[0077] The judgment module is used to judge whether the corresponding real-time temperature difference is within a preset temperature measurement accuracy based on the corresponding real-time temperature difference. If so, it is judged that short-term thermal equilibrium is achieved; otherwise, it is judged that short-term thermal equilibrium is not achieved.

[0078] High temperature measurement module, used to measure and calculate the high temperature resistance difference between the chip under test and the standard chip;

[0079] The calibration module is used to calibrate the chip under test according to the corresponding high-temperature resistance difference and room-temperature resistance difference.

[0080] The calibration module includes:

[0081] The first judgment module is used to calculate the resistance range of each level of the chip under test at high temperature based on the room temperature resistance difference and the resistance value of the standard chip at high temperature, and to determine the level corresponding to the chip under test at high temperature based on the high temperature resistance difference;

[0082] The second judgment module is used to judge the final grade of the chip under test according to the grade corresponding to the chip under test at room temperature and the grade corresponding to the chip under test at high temperature and using the final grade judgment standard.

[0083] The above is only an embodiment of the present invention, and the common knowledge such as the specific technical solutions and / or characteristics in the solution are not described in detail here. It should be pointed out that for those skilled in the art, without departing from the technical solution of the present invention, several variations and improvements can be made, which should also be regarded as the scope of protection of the present invention, and these will not affect the effect of the implementation of the present invention and the practicality of the patent. The scope of protection required by this application shall be based on the content of its claims, and the specific implementation methods and other records in the description can be used to interpret the content of the claims.

Claims

1. A high-precision temperature sensor chip automatic testing method, characterized by: The following steps are involved: S1. Measure the resistance values of the chip under test and the standard chip at room temperature, and calculate the corresponding resistance difference at room temperature; the chip under test includes a surface-mount platinum thermistor chip and a leaded platinum thermistor chip; the room temperature changes dynamically, and the specific temperature value is random according to the actual environmental conditions; the resistance values of the chip under test and the standard chip do not need to reach thermal equilibrium when measured at room temperature; S2. Place the corresponding chip under test and the standard chip in a temperature field and heat them to achieve short-term thermal equilibrium; the temperature of the temperature field is a dynamically changing temperature curve; S3, measuring and calculating the resistance difference between the chip under test and the standard chip at high temperature; S4. Calibrate the chip under test according to the corresponding high-temperature resistance difference and room-temperature resistance difference; The S4 includes: S40, determining the grade of the chip under test at high temperature based on the room temperature resistance difference and the resistance difference of the standard chip at high temperature; S41. Determine the final grade of the chip under test based on the grade corresponding to the chip under test at room temperature and the grade corresponding to the chip under test at high temperature using the final grade evaluation criteria; The criteria for judging each level of the chip under test at room temperature are: Grade A, -0.05Ω≤△R 室温 ≤0.05Ω; Grade B, -0.11Ω≤△R 室温 ≤0.11Ω; Grade C, -0.5Ω≤△R 室温 ≤0.5Ω; The criteria for judging each level of the chip under test at high temperature are: Grade A, (R + △R 室温 ) × (0.003845 × t + 1) - R t标 ≤ △R t ≤ (R + △R 室温 ) × (0.003856 × t + 1) - R t标 , t = (R t标 - R) / 0.3851; Level B, (R + △R 室温 ) × (0.003840 × t + 1) - R t标 ≤ △R t ≤ (R + △R 室温 ) × (0.003862 × t + 1) - R t标 , t = (R t标 - R) / 0.3851; Level C, (R + △R 室温 ) × (0.003826 × t + 1) - R t标 ≤ △R t ≤ (R + △R 室温 ) × (0.003876 × t + 1) - R t标 , t = (R t标 - R) / 0.3851; Where R 室温 Refers to the test value of the chip under test at room temperature, R 常标 Refers to the test value of the standard chip at room temperature, △R 室温 Refers to the difference between the test value of the chip under test and the standard chip at room temperature, namely △R 室温 =R 室温 -R 常标 ; R t Refers to the test value of the chip under test at high temperature t, R t标 Refers to the test value of the standard chip at high temperature t, △R t It refers to the difference between the test value of the chip under test and the standard chip at high temperature t, that is, △R t =R t -R t标 ; R is the nominal resistance value of the chip; The final grade judging criteria are: △R 室温 , △R t Must meet the requirements of Grade A at the same time to be sorted to Grade A, △R 室温 , △R t Must meet the requirements of level B at the same time or one of them must be A and the other B, sorted to level B, △R 室温 , △R t They must meet the requirements of Grade C at the same time, or one of them must be A and the other must be C, or one of them must be B and the other must be C, and then they must be sorted into Grade C.

2. The automatic testing method for a high-precision temperature sensor chip according to claim 1, characterized in that: A new type of heat transfer material is used for heat transfer in the S2 medium temperature field.

3. The automatic testing method for a high-precision temperature sensor chip according to claim 1, characterized in that: The S2 includes: S20, placing the corresponding chip under test and the standard chip in a temperature field for heating, wherein the temperature field is a dynamically changing temperature curve; S21, performing real-time detection on the temperature of the temperature field where the chip under test and the standard chip are located, and calculating the real-time temperature difference between the chip under test and the standard chip; S22. According to the corresponding real-time temperature difference, determine whether the corresponding real-time temperature difference is within the preset temperature measurement accuracy. If so, execute S3; if not, execute S21.

4. A high-precision temperature sensor chip automatic testing system, characterized by: include: The room temperature measurement module is used to measure the resistance values of the chip under test and the standard chip at room temperature before placing them in a high temperature field, and calculate the corresponding room temperature resistance difference at room temperature; The temperature field heating module is used to place the corresponding tested chip and the standard chip in a high temperature field for heating so that they reach short-term thermal equilibrium; the temperature of the temperature field is a dynamically changing temperature curve; High temperature measurement module, used to measure and calculate the high temperature resistance difference between the chip under test and the standard chip; A calibration module is used to calibrate the chip under test according to the corresponding high-temperature resistance difference and room-temperature resistance difference; The calibration module includes: The first judgment module is used to calculate the resistance range of each level of the chip under test at high temperature based on the room temperature resistance difference and the resistance difference of the standard chip at high temperature, and to judge the level corresponding to the chip under test at high temperature based on the high temperature resistance difference; The second judgment module is used to judge the final grade of the chip under test according to the grade corresponding to the chip under test at room temperature and the grade corresponding to the chip under test at high temperature using the final grade judgment standard; The criteria for judging each level of the chip under test at room temperature are: Grade A, -0.05Ω≤△R 室温 ≤0.05Ω; Grade B, -0.11Ω≤△R 室温 ≤0.11Ω; Grade C, -0.5Ω≤△R 室温 ≤0.5Ω; The criteria for judging each level of the chip under test at high temperature are: Grade A, (R + △R 室温 ) × (0.003845 × t + 1) - R t标 ≤ △R t ≤ (R + △R 室温 ) × (0.003856 × t + 1) - R t标 , t = (R t标 - R) / 0.3851; Level B, (R + △R 室温 ) × (0.003840 × t + 1) - R t标 ≤ △R t ≤ (R + △R 室温 ) × (0.003862 × t + 1) - R t标 , t = (R t标 - R) / 0.3851; Level C, (R + △R 室温 ) × (0.003826 × t + 1) - R t标 ≤ △R t ≤ (R + △R 室温 ) × (0.003876 × t + 1) - R t标 , t = (R t标 - R) / 0.3851; Where R 室温 Refers to the test value of the chip under test at room temperature, R 常标 Refers to the test value of the standard chip at room temperature, △R 室温 Refers to the difference between the test value of the chip under test and the standard chip at room temperature, namely △R 室温 =R 室温 -R 常标 ; R t Refers to the test value of the chip under test at high temperature t, R t标 Refers to the test value of the standard chip at high temperature t, △R t It refers to the difference between the test value of the chip under test and the standard chip at high temperature t, that is, △R t =R t -R t标 ; R is the nominal resistance value of the chip; The final grade judging criteria are: △R 室温 , △R t Must meet the requirements of Grade A at the same time to be sorted to Grade A, △R 室温 , △R t Must meet the requirements of level B at the same time or one of them must be A and the other B, sorted to level B, △R 室温 , △R t They must meet the requirements of Grade C at the same time, or one of them must be A and the other must be C, or one of them must be B and the other must be C, and then they must be sorted into Grade C.

5. The high-precision temperature sensor chip automatic testing system according to claim 4, characterized in that: The high temperature field heating module includes: The heating module is used to place the corresponding tested chip and the standard chip in a temperature field for heating after the room temperature measurement is completed, where the temperature field is a dynamically changing temperature curve; The third measurement module is used to detect the temperature of the temperature field where the chip under test and the standard chip are located in real time, and calculate the real-time temperature difference between the chip under test and the standard chip; The judgment module is used to judge whether the corresponding real-time temperature difference is within a preset temperature measurement accuracy based on the corresponding real-time temperature difference. If so, it is judged that short-term thermal equilibrium is achieved; otherwise, it is judged that short-term thermal equilibrium is not achieved.

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