Device and method for preparing nano alloy particles

Abstract

The present invention relates to the technical field of nano alloy material preparation, and provides a device and method for preparing nano alloy particles, wherein the device for preparing nano alloy particles comprises a laser generating unit and a preparing unit. The laser generating unit is used to emit at least two laser beams. The preparing unit comprises a preparation device, wherein a preparation cavity is formed in the preparation device, and at least two placement platforms for placing heterogeneous target materials are arranged in the preparation cavity. The preparation device is also provided with an incident window for passing the laser and a collecting port for collecting nano alloy particles. The target material is arranged in a circular shape, and the intersection of the plane where the target material is located and the focal plane of the laser coincides with the diameter of the target material. The placement platform can drive the target material to rotate along its center, and the laser generating unit can drive the laser to move along the diameter direction of the target material. The plasma is fully cross-recombined to improve the uniformity of the nano alloy particles.

Description

Technical Field

[0001] The present invention relates to the technical field of nano alloy material preparation, and in particular to a device and method for preparing nano alloy particles. Background Art

[0002] With the development of science and technology, single-element nanoparticles can no longer meet people's needs in practical applications, while nano-alloy particles have the unique properties of both nanoparticles and alloys, and have excellent properties in electricity, magnetism, catalysis, corrosion resistance, hardness, melting point, etc.

[0003] Currently, nano alloy particles are mainly prepared by physical methods and chemical methods. In the preparation methods of nano alloy particles in related technologies, different plasmas are not mixed enough when forming alloy particles, resulting in uneven distribution of nano alloy particles. Summary of the invention

[0004] The present invention provides a device for preparing nano alloy particles, which is used to solve the technical problem of uneven distribution of nano alloy particles prepared in the prior art, realize sufficient cross-recombination of plasma, and improve the uniformity of nano alloy particles.

[0005] The invention also provides a method for preparing nano alloy particles.

[0006] The technical solution of the present invention provides a device for preparing nano alloy particles, comprising:

[0007] A laser generating unit, used for emitting at least two laser beams;

[0008] A preparation unit, comprising a preparation device, wherein a preparation cavity is formed in the preparation device, wherein at least two placement platforms for placing heterogeneous target materials are arranged in the preparation cavity, and the preparation device is also provided with an incident window for passing laser light and a collection port for collecting nano alloy particles;

[0009] The target is arranged in a circular shape, the intersection of the plane of the target and the focal plane of the laser coincides with the diameter of the target, the placement platform can drive the target to rotate along its center, and the laser generating unit can drive the laser to move along the diameter direction of the target.

[0010] According to a device for preparing nano alloy particles provided by the present invention, the laser emitting unit comprises:

[0011] A laser transmitter, used to generate laser light;

[0012] A plurality of reflectors are arranged at intervals from each other and are used to reflect the laser so that the laser propagates along a preset optical path;

[0013] At least two light splitting mechanisms are arranged in sequence and at intervals along the direction of the preset light path, and the light splitting mechanisms are used to split a laser beam into two laser beams;

[0014] A galvanometer, disposed at the end of the preset optical path, the galvanometer is used to focus the laser so that the focal points of the laser processed by the galvanometer are located in the same focal plane, and the galvanometer is adapted to the light splitting mechanism;

[0015] The laser power meter is arranged on one of the optical paths after the beam is split by one of the light splitting mechanisms, and is used to detect the laser power located on the corresponding optical path.

[0016] According to a device for preparing nano alloy particles provided by the present invention, the spectroscopic mechanism comprises:

[0017] A half-wave plate and a beam splitter, wherein the half-wave plate and the beam splitter are sequentially arranged at intervals along the direction of the preset optical path, the half-wave plate is used to rotate the laser, and the beam splitter is used to reflect and transmit the laser, so that a laser beam is split into two laser beams by the beam splitter;

[0018] Each of the half-wave plates is connected to a rotating drive member for adjusting the deflection angle of the half-wave plate, and the beam splitter adjusts the intensity ratio of the two split laser beams based on the deflection angle of the half-wave plate.

[0019] According to a device for preparing nano alloy particles provided by the present invention, the preparation unit further comprises:

[0020] A telescopic mechanism, telescopically disposed in the preparation chamber;

[0021] A rotating mechanism is arranged in the preparation chamber, one end of the rotating mechanism is connected to the placement platform to drive the placement platform to rotate, and the other end of the rotating mechanism is connected to the telescopic mechanism to drive the placement platform to rise and fall.

[0022] According to the nano alloy particle preparation device provided by the present invention, each of the galvanometers can respectively make the laser emitted from the galvanometer reciprocate along the diameter direction of the corresponding target material;

[0023] The speed at which the galvanometer drives the laser to move is positively correlated with the rotational angular velocity of the target material, and the speed at which the galvanometer drives the laser to move is also positively correlated with the difference between the radius of the target material and the laser moving distance.

[0024] A preparation device for nano alloy particles provided by the present invention also includes a central control unit, which is electrically connected to each of the galvanometers, and is used to drive each of the galvanometers to move synchronously. The central control unit is also electrically connected to the rotating drive member and the laser power meter. The central control unit is used to receive the laser power signal of the laser power feedback to drive the rotating drive member to move. The central control unit is also electrically connected to the telescopic mechanism and the rotating mechanism, and is used to drive the rotation and height adjustment of the target material.

[0025] According to a nano alloy particle preparation device provided by the present invention, the placement platform is arranged at an angle with the horizontal plane, so that the angle between the plane where the target material is located and the horizontal plane is in the range of 10° to 60°;

[0026] The laser emitted from the galvanometer is set at an angle to the plane where the target material is located, and the angle between the laser emitted from the galvanometer and the plane where the target material is located is in a range of 10° to 60°;

[0027] The placement platforms are spaced apart so that the spacing between the targets in the horizontal direction ranges from 0 to 100 mm, and the spacing between the targets in the height direction ranges from 0 to 100 mm.

[0028] According to a device for preparing nano alloy particles provided by the present invention, a collecting port corresponding to the placing platform is formed on the top surface of the preparation device, and the collecting port is connected to a collector through a collecting channel. The collector is configured to be a cone that tapers from top to bottom, a collecting bottle is connected to the lower end of the collector, and an air outlet channel is configured at the upper end of the collector.

[0029] According to a nano alloy particle preparation device provided by the present invention, a gas supply device is further provided in the preparation chamber, the air outlet of the gas supply device is oriented toward the target material, and is used to mix the plasma generated by the heterogeneous target materials and move the plasma along the collecting port, wherein the gas supply device is suitable for blowing out an inert gas, and the gas flow rate of the gas supply device is 0.1 L / min to 5.0 L / min;

[0030] The collecting channel is connected to an air inlet channel, and the air inlet channel is suitable for blowing inert gas toward the collector.

[0031] According to a nano alloy particle preparation device provided by the present invention, the preparation device is also connected to a vacuum device and a vacuum gauge, the vacuum device is used to evacuate the preparation chamber, and the vacuum gauge is used to detect the vacuum degree of the preparation chamber.

[0032] The technical solution of the present invention also provides a method for preparing nano alloy particles, comprising the following steps:

[0033] Placing at least two target materials on the placement platform of the preparation device respectively, and adjusting the relative position of the target material and the galvanometer;

[0034] The preparation chamber is adjusted to a vacuum environment or an atmosphere environment, at least two laser beams are emitted by the laser generating unit, and the deflection angle of the half-wave plate is adjusted based on the ratio of the alloy in the nano alloy particles to adjust the laser power of each laser beam;

[0035] At least two laser beams are transmitted from the incident window into the preparation chamber respectively, and irradiate at least two target materials respectively;

[0036] Using a central control unit to drive the galvanometer to make the laser reciprocate along the diameter direction of the target material, and using a rotating mechanism to drive the target material to rotate, so as to generate at least two plasmas, and make the at least two plasmas cross-recombined to form nano alloy particles;

[0037] The speed at which the galvanometer drives the laser to move is positively correlated with the rotational angular velocity of the target material, and the speed at which the galvanometer drives the laser to move is also positively correlated with the difference between the radius of the target material and the laser moving distance.

[0038] The nano alloy particle preparation device provided by the embodiment of the present invention is characterized in that at least two laser beams generated by the laser generating unit are respectively transmitted from the incident window into the preparation chamber, and at least two laser beams are respectively irradiated to the heterogeneous target materials placed on the placement platform to generate at least two plasmas. The laser generating unit drives the laser to move along the diameter direction of the target material, and the placement platform is used to drive the target material to rotate along its center, and the intersection of the plane where the target material is located and the focal plane of the laser coincides with the diameter of the target material. Based on the control of the laser moving path, the target material is uniformly consumed, and at the same time, the laser is prevented from causing different plasmas to be unable to cross-recombine in the moving path, so that the different plasmas can fully cross-recombine and ensure the uniformity of the formed nano alloy particles.

[0039] The method for preparing nano alloy particles provided by the embodiment of the present invention comprises at least two laser beams generated by a laser generating unit, which are respectively transmitted from an incident window into a preparation chamber, and at least two laser beams are respectively irradiated to heterogeneous target materials placed on a placement platform to generate at least two plasmas. The laser generating unit drives the laser to move along the diameter direction of the target material, and the placement platform drives the target material to rotate along its center, and the intersection of the plane where the target material is located and the focal plane of the laser coincides with the diameter of the target material. Based on the control of the laser moving path, the target material is uniformly consumed, and at the same time, the laser is prevented from causing different plasmas to be unable to cross-recombine in the moving path, so that different plasmas can fully cross-recombine and ensure the uniformity of the formed nano alloy particles. BRIEF DESCRIPTION OF THE DRAWINGS

[0040] In order to more clearly illustrate the technical solutions in the present invention or the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0041] Figure 1 It is a structural schematic diagram of a preparation unit in the device for preparing nano alloy particles provided by the present invention;

[0042] Figure 2 It is a schematic structural diagram of a laser generating unit in the device for preparing nano alloy particles provided by the present invention;

[0043] Figure 3 It is a schematic diagram of the path of laser moving on the target material in the device for preparing nano alloy particles provided by the present invention;

[0044] Figure 4 It is a schematic diagram of the path of plasma movement blown by the air supply device in the nano alloy particle preparation device provided by the present invention;

[0045] Figure 5 It is a schematic diagram of the structure of a collector in the device for preparing nano alloy particles provided by the present invention;

[0046] Figure 6 It is a schematic diagram of the process of preparing the nano alloy particles provided by the present invention;

[0047] Figure 7 is a scanning electron microscope image of Ag-Pd nanoalloy particles;

[0048] Figure 8 This is a scanning electron microscope image of Ag-Cu nanoalloy particles.

[0049] Reference numerals:

[0050] 10. Laser generating unit; 110. Laser emitter; 120. Reflector; 130. Galvanometer; 140. Laser power meter; 150. Half-wave plate; 160. Beam splitter; 170. Rotary drive; 180. Beam expander; 20. Preparation device; 210. Preparation cavity; 220. Incident window; 230. Collecting port; 240. Observation window; 30. Rotating mechanism; 410. Collector; 420. Collecting bottle; 430. Air outlet channel; 440. Air inlet channel; 50. Air supply device; 60. Vacuum device; 70. Vacuum gauge; 80. Target material. DETAILED DESCRIPTION

[0051] The following embodiments of the present invention are described in further detail in conjunction with the accompanying drawings and examples. The following examples are used to illustrate the present invention, but are not intended to limit the scope of the present invention.

[0052] In the description of the embodiments of the present invention, it should be noted that the terms "center", "longitudinal", "lateral", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside" and the like indicate positions or positional relationships based on the positions or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the embodiments of the present invention and simplifying the description, and do not indicate or imply that the devices or elements referred to must have a specific orientation, be constructed and operate in a specific orientation, and therefore cannot be understood as limitations on the embodiments of the present invention. In addition, the terms "first", "second", and "third" are used for descriptive purposes only and cannot be understood as indicating or implying relative importance.

[0053] In the description of the embodiments of the present invention, it should be noted that, unless otherwise clearly specified and limited, the terms "connected" and "connection" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium. For ordinary technicians in this field, the specific meanings of the above terms in the embodiments of the present invention can be understood according to specific circumstances.

[0054] In the embodiments of the present invention, unless otherwise clearly specified and limited, the first feature being "above" or "below" the second feature may mean that the first and second features are in direct contact, or the first and second features are in indirect contact through an intermediate medium. Moreover, the first feature being "above", "above" and "above" the second feature may mean that the first feature is directly above or obliquely above the second feature, or simply means that the first feature is higher in level than the second feature. The first feature being "below", "below" and "below" the second feature may mean that the first feature is directly below or obliquely below the second feature, or simply means that the first feature is lower in level than the second feature.

[0055] In the description of this specification, the description with reference to the terms "one embodiment", "some embodiments", "example", "specific example", or "some examples" etc. means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the embodiment of the present invention. In this specification, the schematic representations of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described may be combined in any one or more embodiments or examples in a suitable manner. In addition, those skilled in the art may combine and combine the different embodiments or examples described in this specification and the features of the different embodiments or examples, without contradiction.

[0056] Combine the following Figure 1-Figure 8 Embodiments of the present invention are described.

[0057] like Figure 1-Figure 5 As shown, this embodiment provides a device for preparing nano alloy particles, including a laser generating unit 10 and a preparation unit. The laser generating unit 10 is used to emit at least two laser beams. The preparation unit includes a preparation device 20, in which a preparation cavity 210 is formed, and at least two placement platforms for placing heterogeneous target materials 80 are provided in the preparation cavity 210. The preparation device 20 is also provided with an incident window 220 for passing the laser and a collecting port 230 for collecting nano alloy particles. Among them, the target material 80 is set to be circular, and the intersection of the plane where the target material 80 is located and the focal plane of the laser coincides with the diameter of the target material 80. The placement platform can drive the target material 80 to rotate along its center, and the laser generating unit 10 can drive the laser to move along the diameter direction of the target material 80.

[0058] In this embodiment, at least two laser beams generated by the laser generating unit 10 are respectively transmitted from the incident window 220 into the preparation chamber 210, and at least two laser beams are respectively irradiated to the heterogeneous target 80 placed on the placement platform to generate at least two plasmas. The laser generating unit 10 drives the laser to move along the diameter direction of the target 80, and the placement platform is used to drive the target 80 to rotate along its center, and the intersection of the plane where the target 80 is located and the focal plane of the laser coincides with the diameter of the target 80. Based on the control of the laser moving path, the target 80 is uniformly consumed, and at the same time, the laser is prevented from causing different plasmas to be unable to cross-recombine in the moving path, so that different plasmas can fully cross-recombine and ensure the uniformity of the formed nano alloy particles.

[0059] As the laser irradiates the palladium target 80, bright plasma will be generated at the intersection of the laser focal plane and the surface of the target 80. The plasma formed on the surface of the target 80 will continue to interact with the laser and emit isothermally in a direction perpendicular to the target 80. The different plasmas generated between the different target materials 80 can fully cross-recombine after emission to ensure the uniformity of the alloy.

[0060] Based on the fact that the generated plasma will be emitted in a direction perpendicular to the target material 80, the collecting port 230 is arranged directly opposite to the target material 80, so that the nano alloy particles formed by the generated unused plasma after sufficient cross-compounding can be discharged along the collecting port 230 for easy collection. Alternatively, a substrate can be arranged at the collecting port 230, and the formed nano alloy particles can be directly deposited on the surface of the substrate. Among them, the material of the substrate can be selected from steel, heat-resistant steel, ceramic, glass, etc. Based on the unique advantages of the preparation device and the preparation method of nano alloy particles, the diameter of the substrate can be selected in a large range, specifically, the diameter range of the substrate is 0-200mm (millimeter).

[0061] In this embodiment, the diameter of the target material 80 can be 10mm-100mm, and the selected target material 80 can be a metal material such as Au, Ag, Cu, Fe, Al, Ti, Pd, Pt, Sr, Sn, Sb, In, Ni, etc., or a semiconductor material such as Si, Se, Ge, Ga, Te, etc.

[0062] In order to facilitate observation of the situation inside the preparation chamber 210 , an observation window 240 is further provided on the preparation device 20 .

[0063] According to the preparation device of nano alloy particles provided by the present invention, the laser emitting unit includes a laser emitter 110, a plurality of reflectors 120, at least two spectroscopic mechanisms, at least two galvanometers 130 and a laser power meter 140. The laser emitter 110 is used to generate laser light. The plurality of reflectors 120 are arranged at intervals from each other to reflect the laser light so that the laser light propagates along a preset optical path. At least two spectroscopic mechanisms are arranged at intervals in sequence along the direction of the preset optical path, and the spectroscopic mechanism is used to split a laser beam into two laser beams; at least two galvanometers 130 are arranged at the end of the preset optical path, and the galvanometers 130 are used to transmit and focus the laser light so that the focus of the laser light processed by the galvanometers 130 is located in the same focal plane, and the galvanometers 130 are adapted to the spectroscopic mechanism; the laser power meter 140 is arranged in one of the optical paths after the galvanometers 130 split the light, and is used to detect the laser power located in the corresponding optical path.

[0064] The reflector 120 is used to change the propagation direction of the laser. Figure 2 As shown, a reflector 120 is arranged opposite to the emission port of the laser emitter 110, and reflectors 120 are arranged in sequence at intervals on the light path reflected by the reflector 120, which are used to guide the laser so that the laser propagates along a preset light path, so that the laser can be processed by the galvanometer 130 and then transmitted from the incident window 220 to the preparation chamber 210 to irradiate the target material 80.

[0065] The number of the galvanometer mirrors 130 is the same as the number of the light splitting mechanisms. Figure 2The laser emitting unit adopts two splitting mechanisms and two galvanometers 130 as an example, wherein one of the splitting mechanisms splits a laser beam generated by a laser reflector into two laser beams. One of the split laser beams passes through a beam expander 180 and a reflector 120 and then irradiates one of the galvanometers 130, so that after the laser beam is focused by the galvanometer 130, it is transmitted from the incident window 220 to the preparation chamber 210 to irradiate the target material 80. Another splitting mechanism is set on the optical path of the other laser beam of the split laser beams, and the other splitting mechanism splits the beam into two laser beams, wherein one laser beam passes through a beam expander 180 and a reflector 120 and then irradiates the other galvanometer 130, so that after the laser beam is focused by the galvanometer 130, it is transmitted from the incident window 220 to the preparation chamber 210 to irradiate the target material 80, and the other laser beam is irradiated to the laser power meter 140, so as to detect the laser power of the changed laser beam. The beam expander 180 can expand the diameter of the laser beam and reduce the divergence angle of the laser beam, so that the laser beam can be better focused when incident on the galvanometer 130 .

[0066] Based on the detection of the laser power of one of the laser beams by the laser power meter 140, the laser power of the laser beam can be directly obtained, and the laser power of the other laser beam after being split by the same splitting mechanism and the laser power of the two laser beams corresponding to the previous splitting mechanism can be calculated. In this way, the laser power of each laser beam can be detected and calculated in real time, and the laser power of each laser beam can be adjusted in real time.

[0067] After the laser emitter 110 emits a beam of high-energy laser, a plurality of reflective mirrors 120 , at least two beam splitting mechanisms, and at least two galvanometer mirrors 130 transform the beams into at least two beams of pulsed lasers with controlled energy and trajectory to irradiate the target material 80 .

[0068] Specifically, the light splitting mechanism includes a half-wave plate 150 and a beam splitter 160, which are arranged in sequence along the direction of the preset optical path. The half-wave plate 150 is used to rotate the laser, and the beam splitter 160 is used to reflect and transmit the laser, so that a laser beam is split into two laser beams through the beam splitter 160. Each half-wave plate 150 is respectively connected to a rotating driving member 170 for adjusting the deflection angle of the half-wave plate 150, and the beam splitter 160 adjusts the intensity ratio of the two laser beams after the splitting based on the deflection angle of the half-wave plate 150.

[0069] The deflection angle of the half-wave plate 150 can determine the intensity ratio of the laser beam in two directions after being split by the beam splitter 160. Based on the adjustment of the intensity ratio of the two laser beams, the power ratio of the two laser beams after the splitting is adjusted. For example, under a certain value of the deflection angle, after a laser beam is divided into two laser beams by the half-wave plate 150 and the beam splitter 160, the power ratio of the two laser beams is 1:1. At this time, when the laser power meter 140 detects that the power of a laser beam is 20W (watt), the power of another laser beam split by the same set of half-wave plates 150 and beam splitters 160 is also 20W. The sum of the two laser powers can be calculated to be 40W before the splitting of the laser power. In this way, the laser power of each laser beam can be calculated, and the laser power of each laser beam can be adjusted by rotating the deflection angle of the half-wave plate 150 to change the ratio between different components in the alloy.

[0070] The beam splitter 160 is used to reflect and transmit laser light, so that a beam of laser light can be both transmitted and reflected by the beam splitter 160 , thereby forming two beams of laser light.

[0071] The rotary driving member 170 is a rotary motor, which can quantitatively control the deflection angle of the half-wave plate 150 .

[0072] Based on the above-mentioned setting mode of the laser emitting unit, the laser beam splitting and the real-time controllable laser output trajectory and the real-time adjustable energy can be realized.

[0073] The preparation unit further includes a telescopic mechanism and a rotating mechanism 30. The telescopic mechanism is telescopically arranged in the preparation chamber 210. The rotating mechanism 30 is arranged in the preparation chamber 210, one end of the rotating mechanism 30 is connected to the placement platform, and is used to drive the placement platform to rotate, and the other end of the rotating mechanism 30 is connected to the telescopic mechanism, and is used to drive the placement platform to rise and fall by the telescopic mechanism.

[0074] The telescopic mechanism can specifically adopt an electric telescopic rod, which is tilted and telescopic along its length direction, so as to adjust the horizontal distance and vertical distance between different placement platforms. The telescopic mechanism can adjust the fixed height of the target 80 to change the distance from the target 80 to the collection port 230, and the particle size of the prepared nano alloy particles can be controlled based on the adjustment of the distance from the target 80 to the collection port 230.

[0075] The rotating mechanism 30 is used to drive the placement platform to rotate, thereby realizing the self-rotation of the target 80 .

[0076] Each galvanometer 130 can respectively make the laser emitted from the galvanometer 130 reciprocate along the diameter direction of the corresponding target 80. The speed at which the galvanometer 130 drives the laser to move is positively correlated with the rotational angular velocity of the target 80, and the speed at which the galvanometer 130 drives the laser to move is also positively correlated with the difference between the radius of the target 80 and the laser moving distance.

[0077] Specifically, the relationship function among the speed of laser movement, the rotational angular velocity of the target 80, the radius of the target 80 and the laser movement distance is as follows:

[0078] V=A·ω·(rx)+V1;

[0079] Among them, V1 is the initial speed of the laser, which depends on different preparation requirements;

[0080] A is a constant, which is determined according to different preparation requirements;

[0081] ω is the angular velocity of the target 80;

[0082] r is the radius of the target 80;

[0083] x is the moving distance of the laser.

[0084] Based on the above functional relationship, it can be ensured that different plasmas can fully cross-recombined during the preparation process of the nano alloy particles, and the uniformity of the formed nano alloy particles can be ensured. At the same time, in accordance with the setting mode that the intersection of the plane where the target material 80 is located and the focal plane of the laser coincides with the diameter of the target material 80, the speed of the laser at different positions in the diameter direction of the target material 80 can be different, so that the consumption of the inner and outer sides of the target material 80 during the rotation process is uniform, avoiding the phenomenon that the inner side of the target material 80 consumes more and the outer side consumes less.

[0085] The galvanometer 130 moves so that the laser emitted from the galvanometer 130 reciprocates along the diameter direction of the target material 80. Figure 3 As shown, the laser emitted from one of the galvanometers 130 moves along the diameter from point C1 of one of the targets 80 to point C2, and the laser emitted from another of the galvanometers 130 moves along the diameter from point D1 of another of the targets 80 to point D2.

[0086] In this embodiment, the device for preparing nano-alloy particles also includes a central control unit, which is electrically connected to each galvanometer 130 respectively, and is used to drive each galvanometer 130 to move synchronously. The central control unit is also electrically connected to the rotating drive member 170 and the laser power meter 140. The central control unit is used to receive the laser power signal of the laser power feedback to drive the rotating drive member 170 to move. The central control unit is also electrically connected to the telescopic mechanism and the rotating mechanism 30, and is used to drive the target material 80 to rotate and adjust the height.

[0087] The central control unit can ensure the synchronous movement of the galvanometer mirrors 130, so that each galvanometer mirror 130 can be triggered and work synchronously. The laser emitted by each galvanometer mirror 130 can hit the target material 80 synchronously, and plasma can be generated synchronously for cross-mixing, thereby ensuring the uniformity of the cross-mixing.

[0088] The central control unit also receives the laser power signal fed back by the laser power meter 140, and calculates the laser power of another laser beam after being split by the same splitting mechanism, and the laser power of the two laser beams corresponding to the previous splitting mechanism based on the laser power signal. In this way, the laser power of each laser beam can be detected and calculated in real time, and it is also convenient to control the rotating drive member 170 to drive the half-wave plate 150 to rotate in real time, thereby changing the deflection angle of the half-wave plate 150 to adjust the laser power of each laser beam.

[0089] The central control unit controls the movement of the telescopic mechanism and the rotating mechanism 30 to adjust the height position of the target 80 before the preparation process begins, and continuously rotates the target 80 during the preparation process, and controls the angular velocity of the rotation of the target 80 .

[0090] The placement platform is set at an angle to the horizontal plane so that the angle between the plane where the target 80 is located and the horizontal plane is in the range of 10° to 60°. The laser emitted from the galvanometer 130 is set at an angle to the plane where the target 80 is located, and the angle between the laser emitted from the galvanometer 130 and the plane where the target 80 is located is in the range of 10° to 60°. The placement platforms are spaced so that the spacing between the targets 80 in the horizontal direction ranges from 0 to 100 mm, and the spacing between the targets 80 in the height direction ranges from 0 to 100 mm. The alloy ratio of the nano-alloy particles can be adjusted based on the distance and angle settings, and the plasma can also be ensured to be fully mixed and uniform.

[0091] like Figure 1 and Figure 5 As shown, the top surface of the preparation device 20 is formed with a collecting port 230 corresponding to the placing platform, and the collecting port 230 is connected to the collector 410 through a collecting channel. The collector 410 is configured to be a cone that tapers from top to bottom, and the lower end of the collector 410 is connected to a collecting bottle 420, and the upper end of the collector 410 is configured with an air outlet channel 430.

[0092] The formed nano alloy particles are settled from the collection port 230 and the collector 410 to the collection bottle 420 for collection. Specifically, during the collection process, the airflow will drive the nano alloy particles to move, and since the collector 410 is configured to be a tapered shape that tapers from top to bottom, the mixture of gas and nano alloy particles will rotate around the inner wall of the collector 410. Since the nano alloy particles are heavier, during the collection process, the nano alloy particles will continue to sink and fall into the collection bottle 420 below, while the gas is lighter and will gradually float up and be discharged from the air outlet channel 430 above.

[0093] The preparation chamber 210 is also provided with an air supply device 50, the outlet of which faces the target material 80, for mixing the plasma generated by the heterogeneous target material 80 and moving the plasma along the collecting port 230, wherein the air supply device 50 is suitable for blowing out inert gas, and the gas flow rate of the air supply device 50 is 0.1L / min to 5.0L / min (liters per minute). The collecting channel is connected to an air inlet channel 440, and the air inlet channel 440 is suitable for blowing inert gas toward the collector 410.

[0094] The gas supply device 50 can fill the preparation chamber 210 with gas on one hand, and on the other hand, can allow the inert gas to blow toward the plasma at a certain angle, so that different types of plasma are evenly mixed under the drive of the gas flow. The mixed nano alloy particles are discharged from the collection port 230 and the collection channel into the collector 410 for collection. The inert gas can be selected from helium, argon, nitrogen, carbon dioxide, etc.

[0095] like Figure 4 As shown, the air supply device 50 may include an air supply hose and an air supply head. One end of the air supply hose is connected to the air outlet mechanism, and the other end is connected to the air supply head. The air outlet of the air supply head faces the target material 80. The air supply hose can facilitate the adjustment of the position and direction of the air supply head to adjust the position and angle of the air supply head according to different needs. Figure 4 As shown, the triangular area roughly indicates the position of the plasma. By setting the gas supply device 50, the plasma emitted by one of the targets 80 can be blown from the position A1 to the position A2, and the plasma emitted by another target 80 can be blown from the position B1 to the position B2, thereby disturbing the plasma and ensuring sufficient mixing between the plasmas.

[0096] The gas flow rate of the gas supply device 50 is 0.1 L / min to 5.0 L / min, and the gas flow rate is adjusted based on different preparation requirements. Nano alloy particles of different particle sizes can be prepared based on the adjustment of the gas flow rate.

[0097] In this embodiment, the particle size of the nano alloy particles is adjusted based on the adjustment of the gas flow rate of the gas supply device 50 and the telescopic adjustment of the distance from the target 80 to the collecting port 230 by the telescopic mechanism. The two cooperate with each other to adjust the particle size of the nano alloy particles.

[0098] Since the collector 410 is configured to be tapered from top to bottom, the inert gas is blown into the collection channel and the collector 410 through the air inlet channel 440, and the mixture of the gas and the nano alloy particles rotates around the inner wall of the collector 410. Since the nano alloy particles are heavier, they will continue to sink and fall into the collection bottle 420 below during the collection process, while the inert gas is lighter and will be discharged from the air outlet channel 430 above.

[0099] Based on the setting of the gas supply device 50, nano alloy particles can be prepared in an atmosphere environment, and the gas pressure in the atmosphere environment can be 1Pa-10000Pa (Pascals).

[0100] The preparation device 20 is also connected to a vacuum device 60 and a vacuum gauge 70 . The vacuum device 60 is used to evacuate the preparation chamber 210 , and the vacuum gauge 70 is used to detect the vacuum degree of the preparation chamber 210 .

[0101] Based on the arrangement of the vacuum device 60 and the vacuum gauge 70, nano alloy particles can be prepared in a vacuum environment. In the vacuum environment, the gas pressure can be 1×10 -1 Pa-1×10 -5 Pa. At this time, it is suitable to set a substrate at the collecting port 230 to deposit and obtain nano alloy particles.

[0102] When preparing nano alloy particles under vacuum environment, the nano alloy particles can also be collected by the collector 410 and the collecting bottle 420. At this time, the air outlet channel 430 at the upper end of the collector 410 and the air inlet channel 440 on the collecting channel need to be closed.

[0103] Inert gas is used for protection in the atmosphere, so that the nano alloy particles will not be oxidized in either the atmosphere or the vacuum environment, thus ensuring the product quality of the nano alloy particles.

[0104] Based on the above-mentioned setting mode of the nano alloy particle preparation device in this embodiment, the particle size of the prepared nano alloy particles can be adjusted by controlling the gas delivery volume and the distance between the target material 80 and the collection port 230; the alloy ratio of the nano alloy particles can be adjusted by controlling the deflection angle of the half-wave plate 150, the total laser power and the relative positions of different target materials 80. The prepared nano alloy particles have controllable particle size, adjustable composition, uniform particle size, high alloy degree, can be prepared on a large area, and can also prepare multi-component alloys. The corresponding preparation method is simple to operate, economical and environmentally friendly, and highly efficient.

[0105] The following is a description of the method for preparing the nano alloy particles provided by the present invention. The method for preparing the nano alloy particles described below and the method for preparing the nano alloy particles described above can be referred to each other.

[0106] like Figure 6 As shown, the method for preparing nano alloy particles provided in this embodiment specifically includes the following steps:

[0107] S100 , placing at least two types of target materials 80 on the placement platforms of the preparation device 20 respectively, and adjusting the relative positions of the target materials 80 and the galvanometer 130 .

[0108] S200, adjusting the preparation chamber 210 to a vacuum environment or an atmosphere environment, using the laser generating unit 10 to emit at least two laser beams, and adjusting the deflection angle of the half-wave plate 150 based on the alloy ratio requirement in the nano-alloy particles to adjust the laser power of each laser beam.

[0109] S300 , at least two laser beams are transmitted from the incident window 220 into the preparation chamber 210 , and irradiate at least two types of target materials 80 , respectively.

[0110] S400, using the central control unit to drive the galvanometer 130 to move so that the laser reciprocates along the diameter direction of the target material 80, and using the rotating mechanism 30 to drive the target material 80 to rotate, so as to generate at least two plasmas, and make the at least two plasmas cross-recombined to form nano alloy particles.

[0111] The speed at which the galvanometer 130 drives the laser to move is positively correlated with the rotational angular velocity of the target 80 , and the speed at which the galvanometer 130 drives the laser to move is also positively correlated with the difference between the radius of the target 80 and the moving distance of the laser.

[0112] In this embodiment, at least two laser beams generated by the laser generating unit 10 are respectively transmitted from the incident window 220 into the preparation chamber 210, and at least two laser beams are respectively irradiated to the heterogeneous target 80 placed on the placement platform to generate at least two plasmas. The laser generating unit 10 drives the laser to move along the diameter direction of the target 80, and the placement platform is used to drive the target 80 to rotate along its center, and the intersection of the plane where the target 80 is located and the focal plane of the laser coincides with the diameter of the target 80. Based on the control of the laser moving path, the target 80 is uniformly consumed, and at the same time, the laser is prevented from causing different plasmas to be unable to cross-recombine in the moving path, so that different plasmas can fully cross-recombine and ensure the uniformity of the formed nano alloy particles.

[0113] The method for preparing nano alloy particles provided in this embodiment has a vacuum environment mode and an atmosphere environment mode. In the vacuum environment mode, the vacuum device 60 can be used to cooperate with the vacuum gauge 70 to form a vacuum environment in the preparation chamber 210. At this time, it is suitable to set a substrate at the collection port 230 to deposit and obtain nano alloy particles. In the atmosphere environment mode, an inert gas can be introduced by a gas supply device 50. On the one hand, the gas supply device 50 fills the preparation chamber 210 with gas, and on the other hand, the inert gas can be blown toward the plasma at a certain angle, so that different types of plasma are evenly mixed under the drive of the air flow. The mixed nano alloy particles are discharged from the collection port 230 and the collection channel into the collector 410 for collection.

[0114] Take two target materials 80 as an example, one target material 80 is silver (Ag), and the other target material 80 is palladium (Pb), and both target materials 80 are round targets 80 with a diameter of 50 mm and a thickness of 3 mm, and the metal purity is 99.99%. Correspondingly, two placement platforms are set in the preparation chamber 210 of the preparation device 20, and the preparation device 20 is correspondingly provided with two observation windows 240.

[0115] The silver target 80 and the palladium target 80 are placed on two placement platforms respectively, and the relative positions of the silver target 80 and the palladium target 80 are adjusted by the telescopic mechanism, the positions and angles of the two galvanometer mirrors 130 are adjusted by the galvanometer mirrors 130, and the deflection angles of the two half-wave plates 150 are adjusted by the rotating driving part 170, so as to adjust the power of the two laser beams.

[0116] The preparation is carried out in an argon atmosphere, argon is also introduced into the gas supply device 50, and the pressure is maintained at approximately 500 Pa. The laser power of the laser emitter 110 is set to 70 W, and the two laser beams formed irradiate the silver target 80 and the palladium target 80 for 10 minutes respectively.

[0117] As the two laser beams continue to irradiate the silver target 80 and the palladium target 80, bright plasma will be generated at the intersection of the laser focal plane and the surface of the target 80. The plasma formed on the surface of the target 80 will continue to interact with the laser and emit isothermally in a direction perpendicular to the target 80. Since the rapid quenching in the molten or vapor state is far from reaching equilibrium, the solid solubility of the Ag-Pd system is extended, a supersaturated alloy is obtained, and the Ag-Pd elements inside the nano alloy particles are more evenly distributed.

[0118] Figure 7 This is a scanning electron microscope image of Ag-Pd nano-alloy particles. It can be seen from the image that Ag and Pd form a nano-alloy with good uniformity.

[0119] Take two target materials 80 as an example, one target material 80 is silver, and the other target material 80 is copper (Cu), and both target materials 80 are round targets 80 with a diameter of 50 mm and a thickness of 3 mm, and the metal purity is 99.99%. Correspondingly, two placement platforms are set in the preparation chamber 210 of the preparation device 20, and the preparation device 20 is correspondingly provided with two observation windows 240.

[0120] The silver target 80 and the copper target 80 are placed on two placement platforms respectively, and the relative positions of the silver target 80 and the copper target 80 are adjusted by the telescopic mechanism, the positions and angles of the two galvanometers 130 are adjusted by the galvanometer 130, and the deflection angles of the two half-wave plates 150 are adjusted by the rotating driving part 170, thereby adjusting the power of the two laser beams.

[0121] The preparation is carried out in an argon atmosphere, argon is also introduced into the gas supply device 50, and the pressure is maintained at approximately 500 Pa. The laser power of the laser emitter 110 is set to 70 W, and the two laser beams formed irradiate the silver target 80 and the copper target 80 for 10 minutes respectively.

[0122] As the two laser beams continue to irradiate the silver target 80 and the copper target 80, bright plasma will be generated at the intersection of the laser focal plane and the surface of the target 80. The plasma formed on the surface of the target 80 will continue to interact with the laser and emit isothermally in a direction perpendicular to the target 80. Since the rapid quenching in the melting or vapor state is far from reaching equilibrium, the solid solubility of the Ag-Cu system is extended, a supersaturated alloy is obtained, and the Ag-Cu elements inside the nano alloy particles are more evenly distributed.

[0123] Figure 8 This is a scanning electron microscope image of Ag-Cu nano-alloy particles. It can be seen from the image that Ag and Cu form a nano-alloy with good uniformity.

[0124] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit it. Although the present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or make equivalent replacements for some of the technical features therein. However, these modifications or replacements do not deviate the essence of the corresponding technical solutions from the spirit and scope of the technical solutions of the embodiments of the present invention.

Claims

1. A method for preparing nano alloy particles, characterized in that: The steps include: Placing at least two target materials on the placement platform of the preparation device respectively, and adjusting the relative position of the target material and the galvanometer; The preparation chamber is adjusted to a vacuum environment or an inert atmosphere environment, at least two laser beams are emitted by a laser generating unit, and the deflection angle of the half-wave plate is adjusted based on the alloy ratio requirement in the nano alloy particles to adjust the laser power of each laser beam; At least two laser beams are transmitted from the incident window into the preparation chamber respectively, and irradiate at least two target materials respectively; Using a central control unit to drive the galvanometer to make the laser reciprocate along the diameter direction of the target material, and using a rotating mechanism to drive the target material to rotate, so as to generate at least two plasmas, and make the at least two plasmas cross-recombined to form nano alloy particles; The speed at which the galvanometer drives the laser to move is positively correlated with the rotational angular velocity of the target, and the speed at which the galvanometer drives the laser to move is also positively correlated with the difference between the radius of the target and the laser moving distance; Furthermore, the relationship function among the speed of laser movement, the rotational angular velocity of the target, the radius of the target and the laser movement distance is as follows: V = A·ω·(rx)+V1; Among them, V1 is the initial speed of the laser, which depends on different preparation requirements; A is a constant, which is determined according to different preparation requirements; ω is the angular velocity of the target; r is the radius of the target; x is the moving distance of the laser.

2. The method for preparing nano alloy particles according to claim 1, characterized in that: The preparation method is carried out using a nano alloy particle preparation device, and the nano alloy particle preparation device comprises: A laser generating unit, used for emitting at least two laser beams; A preparation unit, comprising a preparation device, wherein a preparation cavity is formed in the preparation device, wherein at least two placement platforms for placing heterogeneous target materials are arranged in the preparation cavity, and the preparation device is also provided with an incident window for passing laser light and a collection port for collecting nano alloy particles; The target is arranged in a circular shape, the intersection of the plane of the target and the focal plane of the laser coincides with the diameter of the target, the placement platform can drive the target to rotate along its center, and the laser generating unit can drive the laser to move along the diameter direction of the target.

3. The method for preparing nano alloy particles according to claim 2, characterized in that: The laser emitting unit comprises: A laser transmitter, used to generate laser light; A plurality of reflectors are arranged at intervals from each other and are used to reflect the laser so that the laser propagates along a preset optical path; At least two light splitting mechanisms are arranged in sequence and at intervals along the direction of the preset light path, and the light splitting mechanisms are used to split a laser beam into two laser beams; At least two galvanometer mirrors are provided at the end of the preset optical path, the galvanometer mirrors are used to focus the laser so that the focal points of the lasers processed by the galvanometer mirrors are located in the same focal plane, and the galvanometer mirrors are adapted to the light splitting mechanism; The laser power meter is arranged on one of the optical paths after the beam is split by one of the light splitting mechanisms, and is used to detect the laser power located on the corresponding optical path.

4. The method for preparing nano alloy particles according to claim 3, characterized in that: The light splitting mechanism comprises: A half-wave plate and a beam splitter, wherein the half-wave plate and the beam splitter are sequentially arranged at intervals along the direction of the preset optical path, the half-wave plate is used to rotate the laser, and the beam splitter is used to reflect and transmit the laser, so that a laser beam is split into two laser beams by the beam splitter; Among them, each half-wave plate is connected to a rotating drive component, which is used to adjust the deflection angle of the half-wave plate based on the proportion of alloy in the nano-alloy particles. The beam splitter adjusts the intensity ratio of the two laser beams after splitting based on the deflection angle of the half-wave plate, thereby adjusting the laser power of each laser beam.

5. The method for preparing nano alloy particles according to claim 4, characterized in that: The preparation unit also includes: A telescopic mechanism, telescopically disposed in the preparation chamber; A rotating mechanism is arranged in the preparation chamber, one end of the rotating mechanism is connected to the placement platform to drive the placement platform to rotate, and the other end of the rotating mechanism is connected to the telescopic mechanism to drive the placement platform to rise and fall.

6. The method for preparing nano alloy particles according to claim 5, characterized in that: Each of the galvanometers can respectively make the laser emitted from the galvanometer reciprocate along the diameter direction of the corresponding target material; The speed at which the galvanometer drives the laser to move is positively correlated with the rotational angular velocity of the target material, and the speed at which the galvanometer drives the laser to move is also positively correlated with the difference between the radius of the target material and the laser moving distance.

7. The method for preparing nano alloy particles according to claim 6, characterized in that: The nano alloy particle preparation device also includes a central control unit, which is electrically connected to each of the galvanometers and is used to drive each of the galvanometers to move synchronously. The central control unit is also electrically connected to the rotating drive member and the laser power meter. The central control unit is used to receive the laser power signal of the laser power feedback to drive the rotating drive member to move. The central control unit is also electrically connected to the telescopic mechanism and the rotating mechanism, and is used to drive the rotation and height adjustment of the target material.

8. The method for preparing nano alloy particles according to claim 6, characterized in that: The placement platform is arranged at an angle to the horizontal plane, so that the angle between the plane where the target material is located and the horizontal plane is in the range of 10° to 60°; The laser emitted from the galvanometer is set at an angle to the plane where the target material is located, and the angle between the laser emitted from the galvanometer and the plane where the target material is located is in a range of 10° to 60°; The placement platforms are spaced apart so that the spacing between the targets in the horizontal direction ranges from 0 to 100 mm (excluding 0), and the spacing between the targets in the height direction ranges from 0 to 100 mm (excluding 0).

9. The method for preparing nano alloy particles according to any one of claims 2 to 8, characterized in that: The collecting port is formed on the top surface of the preparation device, and the collecting port is suitable for being connected to a collector through a collecting channel. The collector is configured to be a cone that tapers from top to bottom, a collecting bottle is connected to the lower end of the collector, and an air outlet channel is configured at the upper end of the collector.

10. The method for preparing nano alloy particles according to claim 9, characterized in that: The preparation chamber is also provided with an air supply device, the air outlet of which faces the target material, and is used to mix the plasma generated by the heterogeneous target materials and move the plasma along the collecting port, wherein the air supply device is suitable for blowing out an inert gas, and the gas flow rate of the air supply device is 0.1 L / min to 5.0 L / min; The collecting channel is connected to an air inlet channel, and the air inlet channel is suitable for blowing inert gas toward the collector.

11. The method for preparing nano alloy particles according to claim 9, characterized in that: The preparation device is also connected to a vacuum device and a vacuum gauge, wherein the vacuum device is used to evacuate the preparation chamber, and the vacuum gauge is used to detect the vacuum degree of the preparation chamber.

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