A radiation-resistant high-frequency SOI power amplifier with adaptive capacitor
By introducing adaptive capacitance and radiation detection control circuits into the RF SOI amplifier, the problem of degradation in the performance of RF power in the irradiated environment is solved, and stable performance and high-efficiency output in the high-irradiated environment are achieved.
Patent Information
- Application Number
- CN202310449998.2
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Filing Date
- 2023-04-25
- Publication Date
- 2024-12-17
- Estimated Expiration
- 2043-04-25
AI Technical Summary
The problem of performance degradation in radio frequency power in irradiated environments, especially performance degradation caused by the reduction of carrier mobility and threshold voltage. The prior art has little research on radiation resistance reinforcement.
A irradiation-resistant radio frequency SOI amplifier circuit structure with adaptive capacitors is designed. By adding four stacked amplifiers, radiation detection control circuits and switching capacitor arrays to the SOI process, the radiation detection control circuit is used to detect the irradiation signal and pass the threshold. The detector generates a control signal to control the on and off of the switching capacitor array to correct the amplifier performance.
In the irradiation environment of 300krad, the performance of the amplifier is significantly improved, the gain does not decrease, the power additional efficiency PAE is reduced by 2%, and the saturated output power Psat is reduced by only 0.5dBm, which is significantly improved compared to the traditional four-stack power amplifier.
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Figure CN116526986B_ABST
Abstract
Description
Technical Field
[0001] The invention belongs to the field of radio frequency integrated circuits, and in particular relates to an anti-radiation high-frequency SOI power amplifier with an adaptive capacitor. Background Art
[0002] Aerospace exploration has brought broad development space for aerospace communication systems. Aerospace communication technology is an important communication bridge to promote human space exploration. However, this type of wireless transceiver system faces various radiation tests in space and its performance is easily changed in the radiation environment. SOI process is widely used in various radiation-resistant applications due to its excellent radiation resistance performance and can be fully integrated into the system, which has good application prospects. In addition, the transistor stacking technology based on SOI process can make up for the disadvantage of the low withstand voltage of a single transistor, thereby increasing the output power of the power amplifier. Sataporn of the University of California, San Diego designed a power amplifier with a saturated output power of 1.74W and an operating frequency of 1.9GHz based on the 130nmSOI process. The circuit schematic diagram is shown below. Figure 4 shown. Figure 4 The traditional non-irradiation-hardened power amplifier shown in the figure will have its performance reduced to a certain extent after receiving a certain dose of radiation due to reduced carrier mobility, changes in threshold voltage, etc. As the core component of the wireless transceiver system, the RF power amplifier has little reference research on radiation hardening, and it is of great research significance to consider the radiation hardening of the RF power amplifier. Summary of the invention
[0003] The present invention proposes a radiation-resistant RF SOI power amplifier circuit structure with an adaptive capacitor. By using the SOI process and adding a radiation-resistant adaptive capacitor to the RF SOI power amplifier, the radiation-resistant reinforcement of the power amplifier is achieved, thereby effectively reducing the problem of degradation of the power amplifier's radiation performance.
[0004] The specific technical scheme of the present invention is as follows: an adaptive capacitor radiation-resistant RF SOI power amplifier, including a four-stack power amplifier, a radiation detection control circuit and a switch capacitor array. The four-stack power amplifier includes four-stack transistors, a bias resistor and a radio frequency choke inductor, the radiation detection control circuit includes a radiation detection circuit and a threshold detector, and the switch capacitor array is composed of a switch transistor and a capacitor; the gates of the four-stack transistors are respectively connected to the switch capacitor array and the bias resistor, and the drains of the four-stack transistors are connected to the radio frequency choke inductor; the radiation detection circuit is connected to the threshold detector, and the radiation signal is detected and amplified by the radiation detection circuit, and then converted into a control signal through the threshold detector to control the opening and closing of the switch capacitor array.
[0005] Furthermore, the four-stack power amplifier includes four-stack transistors, bias resistors and radio frequency choke inductors. The four-stack transistors include a first transistor M1, a second transistor M2, a third transistor M3 and a fourth transistor M4; the bias resistors include a first resistor Rb1, a second resistor Rb2, a third resistor Rb3 and a fourth resistor Rb4; the radio frequency choke inductor is a first inductor RFC; and the switch capacitor array includes a first switch capacitor array CA1, a second switch capacitor array CA2 and a third switch capacitor array CA3. The gate of the first transistor M1 is connected to the signal input terminal RFin, and the gate of the first transistor M1 is connected to the first bias voltage Vb1 through the first resistor Rb1, the source of the first transistor M1 is grounded, and the drain of the first transistor M1 is connected to the source of the second transistor M2; the gate of the second transistor M2 is connected to the ground through the first switch capacitor array CA1, and the gate of the second transistor M2 is connected to the second bias voltage Vb2 through the second resistor Rb2, and the drain of the second transistor M2 is connected to the source of the third transistor M3; the gate of the third transistor M3 is connected to the ground through the second switch capacitor array CA2, and the gate of the third transistor M3 is connected to the third bias voltage Vb3 through the third resistor Rb3, and the drain of the third transistor M3 is connected to the source of the fourth transistor M4; the gate of the fourth transistor M4 is connected to the ground through the third switch capacitor array CA3, and the gate of the fourth transistor M4 is connected to the fourth bias voltage Vb4 through the fourth resistor Rb4, and the drain of the fourth transistor M4 is connected to the signal output terminal RFout, and is connected to the power supply via the first inductor RFC.
[0006] Further, the radiation detection control circuit includes a radiation detection circuit and a threshold detector. The radiation detection circuit includes a fifth transistor M5, a sixth transistor M6, a seventh transistor M7, an eighth transistor M8, a fifth resistor R5, and a sixth resistor R6; the threshold detector includes a seventh resistor R7, an eighth resistor R8, a ninth resistor R9, a first threshold detector A1, a second threshold detector A2, and a third threshold detector A3. The drain and gate of the fifth transistor M5 are connected to the power supply, the source of the fifth transistor M5 is connected to the gate and drain of the sixth transistor M6, the source of the sixth transistor M6 is connected to the upper end of the fifth resistor R5, the lower end of the fifth resistor R5 is grounded, the upper end of the sixth resistor R6 is connected to the power supply, the lower end of the sixth resistor R6 is connected to the drain of the seventh transistor M7, the gate of the seventh transistor M7 is connected to the upper end of the fifth resistor R5, the source of the seventh transistor M7 is connected to the drain and gate of the eighth transistor M8, and the source of the eighth transistor M8 is grounded; the seventh resistor R7, the eighth resistor R8, The ninth resistor R9 is connected in series in sequence, the upper end of the seventh resistor R7 is connected to the lower end of the sixth resistor R6, and the lower end of the ninth resistor R9 is grounded; each threshold detector is composed of four inverters connected in series; the first threshold detector A1 input is connected to the upper end of the seventh resistor R7, and the first threshold detector A1 outputs a first control signal SW1, the second threshold detector A2 input is connected to the upper end of the eighth resistor R8, and the second threshold detector A2 outputs a second control signal SW2, the third threshold detector A3 input is connected to the upper end of the ninth resistor R9, and the third threshold detector A3 outputs a third control signal SW3.
[0007] Further, the switch capacitor array is composed of switch transistors and capacitors. The first switch capacitor array CA1 includes a first capacitor C10, a second capacitor C11, a third capacitor C12, a fourth capacitor C13, a ninth transistor M11, a tenth transistor M12, and an eleventh transistor M13; the second switch capacitor array CA2 includes a fifth capacitor C20, a sixth capacitor C21, a seventh capacitor C22, an eighth capacitor C23, a twelfth transistor M21, a thirteenth transistor M22, and a fourteenth transistor M23; the third switch capacitor array CA3 includes a ninth capacitor C30, a tenth capacitor C31, an eleventh capacitor C32, a twelfth capacitor C33, a fifteenth transistor M31, a sixteenth transistor M32, and a seventeenth transistor M33. For the transistors in the switch capacitor array, the gates of the ninth transistor M11, the twelfth transistor M21, and the fifteenth transistor M31 are controlled by the first control signal SW1, the gates of the tenth transistor M12, the thirteenth transistor M22, and the sixteenth transistor M32 are controlled by the second control signal SW2, and the gates of the eleventh transistor M13, the fourteenth transistor M23, and the seventeenth transistor M33 are controlled by the third control signal SW3; the upper ends of the ninth capacitor C30, the tenth capacitor C31, the eleventh capacitor C32, and the twelfth capacitor C33 of the third switch capacitor array CA3 are all connected to the gate of the fourth transistor M4, the lower end of the ninth capacitor C30 is grounded, and the tenth capacitor C3 is grounded. The lower end of the first switch capacitor array CA1 is connected to the drain of the fifteenth transistor M31, the gate of the fifteenth transistor M31 is controlled by the first control signal SW1, the source of the fifteenth transistor M31 is grounded, the lower end of the eleventh capacitor C32 is connected to the drain of the sixteenth transistor M32, the gate of the sixteenth transistor M32 is controlled by the second control signal SW2, the source of the sixteenth transistor M32 is grounded, the lower end of the twelfth capacitor C33 is connected to the drain of the seventeenth transistor M33, the gate of the seventeenth transistor M33 is controlled by the third control signal SW3, the source of the seventeenth transistor M33 is grounded, and the circuit structures of the first switch capacitor array CA1, the second switch capacitor array CA2, and the third switch capacitor array CA3 are the same.
[0008] Furthermore, in the four-stack power amplifier, the direction of the static current starts from the power supply, passes through the first inductor RFC, flows into the drain of the fourth transistor M4, flows out from the source of the fourth transistor M4, then flows into the drain of the third transistor M3, flows out from the source of the third transistor M3, then flows into the drain of the second transistor M2, flows out from the source of the second transistor M2, then flows into the drain of the first transistor M1, flows out from the source of the first transistor M1, and finally flows into the ground; in the radiation detection control circuit, the direction of the static current starts from the power supply, and passes through two branches to the ground respectively. The current in the first branch passes through the fifth transistor M5, the sixth transistor M6, and the fifth resistor R5 to the ground in sequence. The current in the second branch first flows through the sixth resistor R6, and a part of it passes through the seventh transistor M7 and the eighth transistor M8 to the ground in sequence, and the other part passes through the seventh resistor R7, the eighth resistor R8, and the ninth resistor R9 to the ground in sequence.
[0009] Further, the first transistor M1, the second transistor M2, the third transistor M3, the fourth transistor M4, the fifth transistor M5, the sixth transistor M6, the seventh transistor M7, the eighth transistor M8, the ninth transistor M11, the tenth transistor M12, the eleventh transistor M13, the twelfth transistor M21, the thirteenth transistor M22, the fourteenth transistor M23, the fifteenth transistor M31, the sixteenth transistor M32, and the seventeenth transistor M33 are all NMOS transistors.
[0010] Furthermore, the capacitance value range of the first capacitor C10, the second capacitor C11, the third capacitor C12, the fourth capacitor C13, the fifth capacitor C20, the sixth capacitor C21, the seventh capacitor C22, the eighth capacitor C23, the ninth capacitor C30, the tenth capacitor C31, the eleventh capacitor C32, and the twelfth capacitor C33 in each switch capacitor array is 1fF to 10nF.
[0011] Further, the resistance range of the first resistor Rb1, the second resistor Rb2, the third resistor Rb3, the fourth resistor Rb4, the fifth resistor R5, the sixth resistor R6, the seventh resistor R7, the eighth resistor R8, and the ninth resistor R9 is 100Ω-100kΩ.
[0012] Further, the first inductance RFC ranges from 100pH to 100nH.
[0013] The working principle is as follows: due to the total dose irradiation effect, when irradiated, the performance of the transistor will decrease. For NMOS transistors, their carrier mobility and threshold voltage will decrease to a certain extent. At this time, the current of the fifth transistor M5, the sixth transistor M6, and the fifth resistor R5 branch in the irradiation detection control circuit will decrease, resulting in a decrease in the source voltage of the sixth transistor M6. This voltage is amplified by the sixth resistor R6, the seventh transistor M7, and the eighth transistor M8 branch, and the potential that increases with the total irradiation dose is output from the drain of the seventh transistor M7; the potential that increases with the total irradiation dose passes through the voltage divider network composed of the seventh resistor R7, the eighth resistor R8, and the ninth resistor R9 to obtain three potentials with different variation amplitudes, and then passes through the first threshold detector A1, the second threshold detector A2, and the third threshold detector A3 respectively to obtain the first control signal SW1, the second control signal SW2, and the third control signal SW3. The total dose irradiation effect will reduce the performance of the four-stack power amplifier, and the three control signals generated by the irradiation detection control circuit will change from low level to high level under different irradiation doses, and respectively control the closing and opening of the corresponding capacitors to correct the performance of the power amplifier. The irradiation sensitivity of the irradiation detection control circuit can be adjusted by adjusting the values of the fifth resistor R5 and the sixth resistor R6, or by adjusting the values of the seventh resistor R7, the eighth resistor R8, and the ninth resistor R9. In addition, adjusting the size of the capacitor in the switch capacitor array can improve the radiation resistance of the four-stack power amplifier to varying degrees.
[0014] The beneficial effects of the present invention are as follows: the present invention can significantly improve the degradation of the power amplifier performance caused by radiation by adding an adaptive switched capacitor array to the traditional four-stack power amplifier; at an operating frequency of 10GHz, under an irradiation environment of 300krad, the traditional four-stack power amplifier has a 2.4dB gain (S21) decrease, an 8% power added efficiency PAE decrease, and a 1.6dBm saturated output power Psat decrease. The radiation-resistant frequency-controlled SOI power amplifier with adaptive capacitors proposed by the present invention can achieve no decrease in gain (S21), a 2% power added efficiency PAE decrease, and a saturated output power Psat decrease of only 0.5dBm under a total dose of 300krad, which has a significant improvement effect on the degradation of the power amplifier performance caused by radiation. BRIEF DESCRIPTION OF THE DRAWINGS
[0015] Figure 1 This is a block diagram of a circuit module using a radio frequency stacked power amplifier proposed in the present invention.
[0016] Figure 2 This is a circuit diagram showing the connection between the switch capacitor array CAi (i is 1, 2 or 3) proposed in the present invention and the radiation detection control circuit.
[0017] Figure 3This is a schematic diagram of a radiation-resistant high-frequency SOI power amplifier with an adaptive capacitor according to Example 1 of the present invention.
[0018] Figure 4 The circuit diagram of the conventional non-irradiation reinforced power amplifier in the prior art.
[0019] Figure 5 The gain (S21) of the traditional non-irradiated reinforced power amplifier varies with irradiation.
[0020] Figure 6 The gain (S21) of the radiation-resistant SOI power amplifier of the adaptive capacitor of Example 1 changes with radiation.
[0021] Figure 7 The saturated output power Psat and power added efficiency PAE of the traditional non-irradiated reinforced power amplifier vary with irradiation.
[0022] Figure 8 The saturated output power Psat and power added efficiency PAE of the radiation-resistant high-frequency SOI power amplifier of the adaptive capacitor of Example 1 vary with radiation. DETAILED DESCRIPTION
[0023] In order to make the objectives, technical solutions and advantages of the present invention more clear, the present invention is further described in conjunction with the following specific embodiments and with reference to the accompanying drawings.
[0024] The following non-limiting Example 1 may enable a person skilled in the art to more fully understand the present invention, but does not limit the present invention in any way.
[0025] Example 1
[0026] Combination Figure 1 to Figure 3, this embodiment provides an adaptive capacitor radiation-resistant HF SOI power amplifier, including a four-stack power amplifier, a radiation detection control circuit, and a switch capacitor array. The four-stack power amplifier includes four-stack transistors, bias resistors, RF choke inductors, input matching networks, and output matching networks, wherein the four-stack transistors include a first transistor M1, a second transistor M2, a third transistor M3, and a fourth transistor M4; the bias resistors include a first resistor Rb1, a second resistor Rb2, a third resistor Rb3, and a fourth resistor Rb4; the RF choke inductor is a first inductor RFC; the input matching network includes a second inductor Lin and a thirteenth capacitor Cin; the output matching network includes a third inductor Lout and a fourteenth capacitor Cout. The radiation detection control circuit includes a radiation detection circuit and a threshold detector. The radiation detection circuit includes a fifth transistor M5, a sixth transistor M6, a seventh transistor M7, an eighth transistor M8, a fifth resistor R5, and a sixth resistor R6; the threshold detector includes a seventh resistor R7, an eighth resistor R8, a ninth resistor R9, a first threshold detector A1, a second threshold detector A2, and a third threshold detector A3, and each threshold detector is composed of four inverters connected in series. The switch capacitor array is composed of switch transistors and capacitors. The first switch capacitor array CA1 includes a first capacitor C10, a second capacitor C11, a third capacitor C12, a fourth capacitor C13, a ninth transistor M11, a tenth transistor M12, and an eleventh transistor M13; the second switch capacitor array CA2 includes a fifth capacitor C20, a sixth capacitor C21, a seventh capacitor C22, an eighth capacitor C23, a twelfth transistor M21, a thirteenth transistor M22, and a fourteenth transistor M23; the third switch capacitor array CA3 includes a ninth capacitor C30, a tenth capacitor C31, an eleventh capacitor C32, a twelfth capacitor C33, a fifteenth transistor M31, a sixteenth transistor M32, and a seventeenth transistor M33.
[0027] Circuit structure: The overall circuit is as follows Figure 3shown. For the four-stack power amplifier, the gate of the first transistor M1 is connected to the signal input terminal RFin through the input matching network, and the gate of the first transistor M1 is connected to the first bias voltage Vb1 through the first resistor Rb1, the source of the first transistor M1 is grounded, and the drain of the first transistor M1 is connected to the source of the second transistor M2; the gate of the second transistor M2 is connected to the ground through the first switch capacitor array CA1, and the gate of the second transistor M2 is connected to the second bias voltage Vb2 through the second resistor Rb2, and the drain of the second transistor M2 is connected to the source of the third transistor M3; the gate of the third transistor M3 is connected to the ground through the second switch capacitor array CA2, and the gate of the third transistor M3 is connected to the third bias voltage Vb3 through the third resistor Rb3, and the drain of the third transistor M3 is connected to the source of the fourth transistor M4; the gate of the fourth transistor M4 is connected to the ground through the third switch capacitor array CA3, and the gate of the fourth transistor M4 is connected to the fourth bias voltage Vb4 through the fourth resistor Rb4, and the drain of the fourth transistor M4 is connected to the signal output terminal RFout through the output matching network, and is connected to the power supply via the first inductor RFC. For the radiation detection control circuit, the drain and gate of the fifth transistor M5 are connected to the power supply, the source of the fifth transistor M5 is connected to the gate and drain of the sixth transistor M6, the source of the sixth transistor M6 is connected to the upper end of the fifth resistor R5, the lower end of the fifth resistor R5 is grounded, the upper end of the sixth resistor R6 is connected to the power supply, the lower end of the sixth resistor R6 is connected to the drain of the seventh transistor M7, the gate of the seventh transistor M7 is connected to the upper end of the fifth resistor R5, the source of the seventh transistor M7 is connected to the drain and gate of the eighth transistor M8, and the source of the eighth transistor M8 is grounded; the seventh resistor R7, the eighth resistor R8, and the ninth resistor R9 are connected in series in sequence, the upper end of the seventh resistor R7 is connected to the lower end of the sixth resistor R6, and the lower end of the ninth resistor R9 is grounded; each threshold detector is composed of four inverters connected in series; the specific connection method of the switch capacitor array CAi (i is 1, 2 or 3) and the radiation detection control circuit is as follows Figure 2As shown, the input of the first threshold detector A1 is connected to the upper end of the seventh resistor R7, and the output of the first threshold detector A1 is the first control signal SW1. The input of the second threshold detector A2 is connected to the upper end of the eighth resistor R8, and the output of the second threshold detector A2 is the second control signal SW2. The input of the third threshold detector A3 is connected to the upper end of the ninth resistor R9, and the output of the third threshold detector A3 is the third control signal SW3. For the switch capacitor array, the first switch capacitor array CA1, the second switch capacitor array CA2, and the third switch capacitor array CA3 have the same circuit structure. Taking the third switch capacitor array CA3 as an example, the upper ends of the ninth capacitor C30, the tenth capacitor C31, the eleventh capacitor C32, and the twelfth capacitor C33 are all connected to the gate of the fourth transistor M4, the lower end of the ninth capacitor C30 is grounded, the lower end of the tenth capacitor C31 is connected to the drain of the fifteenth transistor M31, the gate of the fifteenth transistor M31 is controlled by the first control signal SW1, the source of the fifteenth transistor M31 is grounded, the lower end of the eleventh capacitor C32 is connected to the drain of the sixteenth transistor M32, and the gate of the sixteenth transistor M32 is connected to the ground. The gate of the 16th transistor M32 is controlled by the second control signal SW2, the source of the 16th transistor M32 is grounded, the lower end of the 12th capacitor C33 is connected to the drain of the 17th transistor M33, the gate of the 17th transistor M33 is controlled by the third control signal SW3, and the source of the 17th transistor M33 is grounded; in particular, the gates of the 9th transistor M11, the 12th transistor M21, and the 15th transistor M31 are controlled by the first control signal SW1, the gates of the 10th transistor M12, the 13th transistor M22, and the 16th transistor M32 are controlled by the second control signal SW2, and the gates of the 11th transistor M13, the 14th transistor M23, and the 17th transistor M33 are controlled by the third control signal SW3. The input matching network includes a second inductor Lin and a 13th capacitor Cin, one end of the 13th capacitor Cin is connected to the signal output terminal RFin, and is also grounded through the second inductor Lin, and the other end of the 13th capacitor Cin is connected to the gate of the first transistor M1. The output matching network includes a third inductor Lout and a fourteenth capacitor Cout. One end of the fourteenth capacitor Cout is connected to the signal output terminal RFout and is also grounded through the third inductor Lout. The other end of the fourteenth capacitor Cout is connected to the drain of the fourth transistor M4.
[0028] In the four-stack power amplifier part, the direction of the static current starts from the power supply, passes through the first inductor RFC, flows into the drain of the fourth transistor M4, flows out from the source of the fourth transistor M4, then flows into the drain of the third transistor M3, flows out from the source of the third transistor M3, then flows into the drain of the second transistor M2, flows out from the source of the second transistor M2, then flows into the drain of the first transistor M1, flows out from the source of the first transistor M1, and finally flows into the ground; in the radiation detection control circuit, the direction of the static current starts from the power supply, and passes through two branches to the ground respectively. The current in the first branch passes through the fifth transistor M5, the sixth transistor M6, and the fifth resistor R5 to the ground in sequence. The current in the second branch first flows through the sixth resistor R6, and a part of it passes through the seventh transistor M7 and the eighth transistor M8 to the ground in sequence, and the other part passes through the seventh resistor R7, the eighth resistor R8, and the ninth resistor R9 to the ground in sequence.
[0029] In the four-stack power amplifier, the first transistor M1, the second transistor M2, the third transistor M3 and the fourth transistor M4 are all NMOS, the gate length L is 120nm, and the gate width W is 1536um; the inductance value of the first inductor RFC is 10nH, and the values of the first resistor Rb1, the second resistor Rb2, the third resistor Rb3 and the fourth resistor Rb4 are all 10kΩ; in the input matching network, the value of the second inductor Lin is 144pH, and the value of the thirteenth capacitor Cin is 8.5pF; in the output matching network, the value of the third inductor Lout is 450pH, and the value of the fourteenth capacitor Cout is 1.83pF. In the radiation detection control circuit, the fifth transistor M5 and the sixth transistor M6 are both NMOS, the gate length L is 120nm, and the gate width W is 160nm; the seventh transistor M7 and the eighth transistor M8 are both NMOS, the gate length L is 120nm, and the gate width W is 800nm; the resistance values of the fifth resistor R5 and the sixth resistor R6 are both 10kΩ; the resistance values of the seventh resistor R7, the eighth resistor R8, and the ninth resistor R9 are 17kΩ, 14.3kΩ, and 68.7kΩ, respectively. In the switch capacitor array, the ninth transistor M11, the tenth transistor M12, the eleventh transistor M13, the twelfth transistor M21, the thirteenth transistor M22, the fourteenth transistor M23, the fifteenth transistor M31, the sixteenth transistor M32, and the seventeenth transistor M33 are all NMOS, the gate length L is 220nm, and the gate width W is 16um; in the first switch capacitor array CA1, the values of the first capacitor C10, the second capacitor C11, the third capacitor C12, and the fourth capacitor C13 are respectively are 2.16pF, 1.08pF, 1.2pF and 1.2pF respectively; in the second switch capacitor array CA2, the values of the fifth capacitor C20, the sixth capacitor C21, the seventh capacitor C22 and the eighth capacitor C23 are 540fF, 60fF, 144fF and 240fF respectively; in the third switch capacitor array CA3, the values of the ninth capacitor C30, the tenth capacitor C31, the eleventh capacitor C32 and the twelfth capacitor C33 are 300fF, 3fF, 12fF and 60fF respectively.
[0030] Working principle: Due to the total dose irradiation effect, when irradiated, the performance of the transistor will decrease. For NMOS transistors, their carrier mobility and threshold voltage will decrease to a certain extent. At this time, the current of the fifth transistor M5, the sixth transistor M6, and the fifth resistor R5 branch in the irradiation detection control circuit will decrease, resulting in a decrease in the source voltage of the sixth transistor M6. This voltage is amplified by the sixth resistor R6, the seventh transistor M7, and the eighth transistor M8 branch, and the potential that increases with the total irradiation dose is output from the drain of the seventh transistor M7; the above-mentioned potential that increases with the total irradiation dose passes through the voltage divider network composed of the seventh resistor R7, the eighth resistor R8, and the ninth resistor R9 to obtain three potentials with different variation amplitudes, and then passes through the first threshold detector A1, the second threshold detector A2, and the third threshold detector A3 respectively to obtain the first control signal SW1, the second control signal SW2, and the third control signal SW3. The total dose irradiation effect will reduce the performance of the four-stack power amplifier, and the three control signals generated by the irradiation detection control circuit will change from low level to high level under different irradiation doses, and respectively control the closing and opening of the corresponding capacitors to correct the performance of the power amplifier. The irradiation sensitivity of the irradiation detection control circuit can be adjusted by adjusting the values of the fifth resistor R5 and the sixth resistor R6, or by adjusting the values of the seventh resistor R7, the eighth resistor R8, and the ninth resistor R9. In addition, adjusting the size of the capacitor in the switch capacitor array can improve the radiation resistance of the four-stack power amplifier to varying degrees.
[0031] according to Figure 5 The gain-vs-irradiation curve shown in FIG. 1 shows that the gain (S21) of the conventional four-stack power amplifier decreases with irradiation. Under a total irradiation dose of 300 krad, the gain at 10 GHz decreases by 2.4 dB.
[0032] Figure 6 This is the gain variation curve of the radiation-resistant high-frequency SOI power amplifier using adaptive capacitors obtained in this embodiment as it changes with irradiation. It can be seen that the curve is significantly more compact, and under the total irradiation dose of 300 krad, the gain (S21) at 10 GHz does not decrease.
[0033] Figure 7 The curves of the saturated output power Psat and power added efficiency PAE of the traditional four-stack power amplifier with irradiation are shown. Under the condition of 300krad total dose irradiation, its saturated output power Psat decreased by 1.6dBm and the power added efficiency PAE decreased by nearly 8%.
[0034] Figure 8The curves of the saturated output power Psat and power added efficiency PAE of the radiation-resistant high-frequency SOI power amplifier using adaptive capacitors obtained in this embodiment as a function of irradiation show that under a total irradiation dose of 300 krad, the saturated output power Psat only decreases by 0.5 dBm, and the power added efficiency PAE only decreases by 2%, which is a significant improvement over the traditional four-stack power amplifier.
Claims
1. A radiation-resistant high-frequency SOI power amplifier with adaptive capacitors, Features: It includes a four-stack power amplifier, a radiation detection control circuit and a switch capacitor array; the four-stack power amplifier includes four-stack transistors, a bias resistor and a radio frequency choke inductor, the radiation detection control circuit includes a radiation detection circuit and a threshold detector, and the switch capacitor array is composed of a plurality of switch transistors and a plurality of capacitors; the gates of the four-stack transistors are respectively connected to the switch capacitor array and the bias resistor, and the drains of the four-stack transistors are connected to the radio frequency choke inductor; The radiation detection circuit is connected to the threshold detector, and the radiation signal is detected and amplified by the radiation detection circuit, and then converted into a control signal through the threshold detector to control the opening and closing of the switch capacitor array; The four-stack transistor includes a first transistor M1, a second transistor M2, a third transistor M3 and a fourth transistor M4; the bias resistor includes a first resistor Rb1, a second resistor Rb2, a third resistor Rb3 and a fourth resistor Rb4; the RF choke inductor is a first inductor RFC; the switch capacitor array includes a first switch capacitor array CA1, a second switch capacitor array CA2 and a third switch capacitor array CA3; the gate of the first transistor M1 is connected to the signal input terminal RFin, and the gate of the first transistor M1 is connected to the first bias voltage Vb1 through the first resistor Rb1, the source of the first transistor M1 is grounded, and the drain of the first transistor M1 is connected to the source of the second transistor M2; the gate of the second transistor M2 is connected to the signal input terminal RFin through the first switch capacitor array CA1 is connected to the ground, and the gate of the second transistor M2 is connected to the second bias voltage Vb2 through the second resistor Rb2, and the drain of the second transistor M2 is connected to the source of the third transistor M3; the gate of the third transistor M3 is connected to the ground through the second switch capacitor array CA2, and the gate of the third transistor M3 is connected to the third bias voltage Vb3 through the third resistor Rb3, and the drain of the third transistor M3 is connected to the source of the fourth transistor M4; the gate of the fourth transistor M4 is connected to the ground through the third switch capacitor array CA3, and the gate of the fourth transistor M4 is connected to the fourth bias voltage Vb4 through the fourth resistor Rb4, and the drain of the fourth transistor M4 is connected to the signal output terminal RFout, and is connected to the power supply via the first inductor RFC; The radiation detection circuit includes a fifth transistor M5, a sixth transistor M6, a seventh transistor M7, an eighth transistor M8, a fifth resistor R5, and a sixth resistor R6; the threshold detector includes a seventh resistor R7, an eighth resistor R8, a ninth resistor R9, a first threshold detector A1, a second threshold detector A2, and a third threshold detector A3; the drain and gate of the fifth transistor M5 are connected to a power supply, the source of the fifth transistor M5 is connected to the gate and drain of the sixth transistor M6, the source of the sixth transistor M6 is connected to the upper end of the fifth resistor R5, the lower end of the fifth resistor R5 is grounded, the upper end of the sixth resistor R6 is connected to the power supply, the lower end of the sixth resistor R6 is connected to the drain of the seventh transistor M7, the gate of the seventh transistor M7 is connected to the upper end of the fifth resistor R5 The seventh transistor M7 is connected to the drain and gate of the eighth transistor M8, and the source of the eighth transistor M8 is grounded; the seventh resistor R7, the eighth resistor R8, and the ninth resistor R9 are connected in series in sequence, the upper end of the seventh resistor R7 is connected to the lower end of the sixth resistor R6, and the lower end of the ninth resistor R9 is grounded; each threshold detector is composed of four inverters in series; the first threshold detector A1 input is connected to the upper end of the seventh resistor R7, and the first threshold detector A1 outputs a first control signal SW1, the second threshold detector A2 input is connected to the upper end of the eighth resistor R8, and the second threshold detector A2 outputs a second control signal SW2, the third threshold detector A3 input is connected to the upper end of the ninth resistor R9, and the third threshold detector A3 outputs a third control signal SW3; The first switch capacitor array CA1 includes a first capacitor C10, a second capacitor C11, a third capacitor C12, a fourth capacitor C13, a ninth transistor M11, a tenth transistor M12, and an eleventh transistor M13; the second switch capacitor array CA2 includes a fifth capacitor C20, a sixth capacitor C21, a seventh capacitor C22, an eighth capacitor C23, a twelfth transistor M21, a thirteenth transistor M22, and a fourteenth transistor M23; the third switch capacitor array CA3 includes a ninth capacitor C30, a tenth capacitor C31, an eleventh capacitor C32, a twelfth capacitor C33, a fifteenth transistor M31, a sixteenth transistor M32, and a seventeenth transistor M33; for the transistors in the switch capacitor array, the gates of the ninth transistor M11, the twelfth transistor M21, and the fifteenth transistor M31 are controlled by the first control signal SW1, the gates of the tenth transistor M12, the thirteenth transistor M22, and the sixteenth transistor M32 are controlled by the second control signal SW2, and the gates of the eleventh transistor M13, the fourteenth transistor M31, the twelfth transistor M32, and the fifteenth transistor M33 are controlled by the first control signal SW1. The gates of the transistor M23 and the seventeenth transistor M33 are controlled by the third control signal SW3; the upper ends of the ninth capacitor C30, the tenth capacitor C31, the eleventh capacitor C32 and the twelfth capacitor C33 of the third switch capacitor array CA3 are all connected to the gate of the fourth transistor M4, the lower end of the ninth capacitor C30 is grounded, the lower end of the tenth capacitor C31 is connected to the drain of the fifteenth transistor M31, the gate of the fifteenth transistor M31 is controlled by the first control signal SW1, the source of the fifteenth transistor M31 is grounded, the lower end of the eleventh capacitor C32 is connected to the drain of the sixteenth transistor M32, the gate of the sixteenth transistor M32 is controlled by the second control signal SW2, the source of the sixteenth transistor M32 is grounded, the lower end of the twelfth capacitor C33 is connected to the drain of the seventeenth transistor M33, the gate of the seventeenth transistor M33 is controlled by the third control signal SW3, the source of the seventeenth transistor M33 is grounded, and the circuit structures of the first switch capacitor array CA1, the second switch capacitor array CA2 and the third switch capacitor array CA3 are the same.
2. The radiation-resistant high-frequency SOI power amplifier with adaptive capacitor according to claim 1, Features: In the four-stack amplifier, the direction of the static current starts from the power supply, passes through the first inductor RFC, flows into the drain of the fourth transistor M4, flows out from the source of the fourth transistor M4, then flows into the drain of the third transistor M3, flows out from the source of the third transistor M3, then flows into the drain of the second transistor M2, flows out from the source of the second transistor M2, then flows into the drain of the first transistor M1, flows out from the source of the first transistor M1, and finally flows into the ground; In the radiation detection control circuit, the static current flows from the power supply through two branches to the ground. The current in the first branch passes through the fifth transistor M5, the sixth transistor M6, and the fifth resistor R5 to the ground in sequence. The current in the second branch first flows through the sixth resistor R6, and a part of it passes through the seventh transistor M7 and the eighth transistor M8 to the ground in sequence, and the other part passes through the seventh resistor R7, the eighth resistor R8, and the ninth resistor R9 to the ground in sequence.
3. The radiation-resistant high-frequency SOI power amplifier with adaptive capacitor according to claim 2, Features: The first transistor M1, the second transistor M2, the third transistor M3, the fourth transistor M4, the fifth transistor M5, the sixth transistor M6, the seventh transistor M7, the eighth transistor M8, the ninth transistor M11, the tenth transistor M12, the eleventh transistor M13, the twelfth transistor M21, the thirteenth transistor M22, the fourteenth transistor M23, the fifteenth transistor M31, the sixteenth transistor M32, and the seventeenth transistor M33 are all NMOS transistors.
4. The radiation-resistant high-frequency SOI power amplifier with adaptive capacitor according to claim 3, Features: The capacitance value range of the first capacitor C10, the second capacitor C11, the third capacitor C12, the fourth capacitor C13, the fifth capacitor C20, the sixth capacitor C21, the seventh capacitor C22, the eighth capacitor C23, the ninth capacitor C30, the tenth capacitor C31, the eleventh capacitor C32, and the twelfth capacitor C33 in each switch capacitor array is 1fF to 10nF.
5. The radiation-resistant high-frequency SOI power amplifier with adaptive capacitor according to claim 4, Features: The resistance range of the first resistor Rb1, the second resistor Rb2, the third resistor Rb3, the fourth resistor Rb4, the fifth resistor R5, the sixth resistor R6, the seventh resistor R7, the eighth resistor R8 and the ninth resistor R9 is 100Ω-100kΩ.
6. The radiation-resistant high-frequency SOI power amplifier with adaptive capacitor according to claim 4, Features: The first inductor RFC ranges from 100pH to 100nH.